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JPH05105460A - Mold for molding optical element - Google Patents

Mold for molding optical element

Info

Publication number
JPH05105460A
JPH05105460A JP3292432A JP29243291A JPH05105460A JP H05105460 A JPH05105460 A JP H05105460A JP 3292432 A JP3292432 A JP 3292432A JP 29243291 A JP29243291 A JP 29243291A JP H05105460 A JPH05105460 A JP H05105460A
Authority
JP
Japan
Prior art keywords
film
mold
layer
optical element
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3292432A
Other languages
Japanese (ja)
Other versions
JP3049132B2 (en
Inventor
Ryoichi Kitahara
良一 北原
Hajime Ichikawa
一 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP3292432A priority Critical patent/JP3049132B2/en
Publication of JPH05105460A publication Critical patent/JPH05105460A/en
Application granted granted Critical
Publication of JP3049132B2 publication Critical patent/JP3049132B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B11/00Pressing molten glass or performed glass reheated to equivalent low viscosity without blowing
    • C03B11/06Construction of plunger or mould
    • C03B11/08Construction of plunger or mould for making solid articles, e.g. lenses
    • C03B11/084Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor
    • C03B11/086Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor of coated dies
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/10Die base materials
    • C03B2215/12Ceramics or cermets, e.g. cemented WC, Al2O3 or TiC
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/14Die top coat materials, e.g. materials for the glass-contacting layers
    • C03B2215/22Non-oxide ceramics
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/30Intermediate layers, e.g. graded zone of base/top material
    • C03B2215/34Intermediate layers, e.g. graded zone of base/top material of ceramic or cermet material, e.g. diamond-like carbon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

PURPOSE:To provide the subject mold causing no exfoliation of a film and no melt sticking of glass. CONSTITUTION:A nitrided layer 2 is formed by ion implantation in the surface layer of the substrate 1 of a mold made of a cemented carbide, ceramics, etc., and a chromium nitride film 3 is formed by ion implantation on the nitrided layer 2. Since N ions in the nitrided layer 2 bond to N ions in the chromium nitride film 3, the adhesion of the film 3 is improved and the exfoliation of the film 3 is prevented.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は加熱プレスによってレン
ズ等を成形する光学素子成形用型に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical element molding die for molding a lens or the like by hot pressing.

【0002】[0002]

【従来の技術】加熱プレスにより光学素子を成形する成
形用型では離型性が良好であることおよび型基材に被覆
された膜の密着性が高いことが要求されている。後者の
密着性が低いと、膜剥離が生じ、その剥離部分にガラス
が融着して離型性が低下し、型として寿命がなくなるた
めである。
2. Description of the Related Art A mold for molding an optical element by a hot press is required to have good releasability and high adhesion of a film coated on a mold base material. This is because if the latter has low adhesion, film peeling occurs, glass is fused to the peeled portion, the releasability decreases, and the life of the mold is lost.

【0003】このような光学素子成形用型としては従
来、特開昭63−123822号公報が知られている。
この光学素子成形用型はステンレス鋼からなる金属製の
型基材の表面にCr単体膜を形成し、このCr単体膜上
にCr- N系膜を形成し、さらにCr- N系膜上にCr
- C系膜を形成した3層構造となっている。
As a mold for molding such an optical element, JP-A-63-123822 is conventionally known.
In this optical element molding die, a Cr simple substance film is formed on the surface of a metal mold base made of stainless steel, a Cr-N type film is formed on the Cr simple substance film, and further on the Cr-N type film. Cr
-It has a three-layer structure in which a C-based film is formed.

【0004】[0004]

【発明が解決しようとする課題】従来の成形用型におい
ては、ステンレス鋼からなる型基材上の第1層目のCr
単体膜を真空蒸着により形成している。このCr単体膜
をタングステンカーバイド(WC)をベースとした超硬
合金あるいは炭化珪素(SiC)などのセラミックスか
らなる型基材の第1層目として形成し、600℃以上の
型温で連続成形を行うと、Cr単体膜の酸化によりCr
酸化物を形成する。ところが、このCr酸化物は、結晶
粒が拡大したポーラスな膜であると共に、熱膨張係数も
大きいものとなつている。従って、離型時に熱衝撃と引
張力が加わると、膜を引く剥ぐ力が作用するため、膜と
しての結合が破壊され微小剥離を発生させる。その結
果、型成形面の膜剥離部分にガラスが接触して、微小焼
付が生じ、成形された光学素子にクレータ状の表面欠陥
が発生する。そして、このように成形品の外観不良が多
発することにより、外観歩留が低下し、問題となってい
た。
In the conventional molding die, the first layer of Cr on the die base material made of stainless steel is used.
A single film is formed by vacuum vapor deposition. This Cr simple substance film is formed as the first layer of a mold base made of a cemented carbide based on tungsten carbide (WC) or ceramics such as silicon carbide (SiC), and continuously molded at a mold temperature of 600 ° C. or higher. When done, oxidation of the Cr single film causes Cr
Form an oxide. However, this Cr oxide is a porous film with expanded crystal grains and has a large thermal expansion coefficient. Therefore, when a thermal shock and a tensile force are applied at the time of mold release, a peeling force pulling the film acts, so that the bond as the film is broken and minute peeling occurs. As a result, the glass comes into contact with the film exfoliation portion of the molding surface, resulting in micro-baking, which causes crater-like surface defects in the molded optical element. Since the appearance defects of the molded product frequently occur in this way, the appearance yield is lowered, which is a problem.

【0005】本発明は、かかる従来の問題点に鑑みてな
されたもので、型基材に対する被膜の密着性が高く、ガ
ラスの焼付きを生じることのない長寿命の光学素子成形
用型を提供することを目的とする。
The present invention has been made in view of the above conventional problems, and provides a long-life optical element molding die in which the coating film has high adhesion to the die base material and does not cause glass seizure. The purpose is to do.

【0006】[0006]

【課題を解決するための手段および作用】本発明の光学
素子成形用型は、型基材の表層内部にイオン注入により
窒化層を形成し、この窒化層上にイオン注入成膜により
窒化クロム膜を積層したことを特徴とする。
In the optical element molding die of the present invention, a nitride layer is formed by ion implantation inside the surface layer of a mold base material, and a chromium nitride film is formed on the nitride layer by ion implantation film formation. Are laminated.

【0007】上記構成では、Nイオンを注入すること
で、超硬合金あるいはセラミックスからなる型基材の表
層に生成している酸化層を改質し、酸化物を結晶構造内
に含んだ窒化層を形成することができる。この窒化層が
その上に被覆する窒化クロムからなる窒化被膜の密着性
を補助するため、Nイオンの拡散作用、すなわち窒化層
内のNイオンと窒化被膜内のNイオンがイオン結合す
る。このため、窒化被膜のイオン粒子が窒化層内に喰い
込むように成長する。その後、イオン注入成膜法、すな
わち高加速のN2 注入イオンを被膜材料にぶつけ、それ
により高速でスパッタされたイオン化粒子により成膜す
ると、成膜される窒化被膜が結合エネルギーの作用を有
した窒化層の上に成長する。そして、これらの窒化層と
イオン注入成膜法による窒化被膜により、非常に密着性
の向上した成膜が可能となる。
In the above structure, by implanting N ions, the oxide layer formed on the surface of the die base material made of cemented carbide or ceramics is modified, and the nitride layer containing the oxide in the crystal structure is modified. Can be formed. Since this nitride layer assists the adhesion of the nitride film made of chromium nitride coated thereon, the diffusion action of N ions, that is, the N ions in the nitride layer and the N ions in the nitride film are ion-bonded. Therefore, the ion particles of the nitride film grow so as to bite into the nitride layer. After that, when an ion implantation film forming method, that is, a high-acceleration N 2 implantation ion is bombarded against the coating material, thereby forming a film with ionized particles sputtered at a high speed, the nitride film formed has a binding energy effect. It grows on the nitride layer. Then, the nitride layer and the nitride film formed by the ion implantation film formation method enable the film formation with extremely improved adhesion.

【0008】[0008]

【実施例1】図1ないし図3は本発明の実施例1を示
す。本実施例の光学素子成形用型は図1に示すように超
硬合金から成る型基材1と、型基材1の成膜基礎面1A
の表面を改質した改質層2と、その改質層2の上に被覆
された窒化クロムからなる窒化被膜3とから構成されて
いる。型基材1の成形基礎面1Aは、研削,研磨加工を
施し、表面粗度Rmax=0.06μm以下に仕上げら
れている。
First Embodiment FIGS. 1 to 3 show a first embodiment of the present invention. As shown in FIG. 1, the optical element molding die of this embodiment has a die base material 1 made of cemented carbide and a film-forming base surface 1A of the die base material 1.
The surface of the modified layer 2 is modified, and the nitrided film 3 made of chromium nitride coated on the modified layer 2 is formed. The molding base surface 1A of the mold base material 1 is ground and polished so that the surface roughness Rmax is 0.06 μm or less.

【0009】図2は、改質層2を形成する方法を示し、
成形基礎面1AにNイオン4を加速電圧93keV、加
速電流2mA、注入量2×1017ion/cm2 でイオ
ン注入する。その後、図3に示すように型基材1を反転
して、その成形基礎面1Aをクロムからなる被膜材料5
に対向させる。そして被膜材料5にNイオン4を加速電
圧92keV、加速電流0.5mA、注入量1×1015
ion/cm2 でイオン注入すると同時に、型基材1の
成形基礎面1Aの表面を改質した改質層2の上に、スパ
ッタ作用によりCr- Nのスパッタ粒子6を成長させ、
CrN膜3を形成する。形成したCrN膜の膜厚はd=
1.2μmであり、ビッカース硬度はHv=1410k
gf/mm2 (25gf荷重)、面粗度はRmax=
0.062で、研磨加工後と差がなかった。
FIG. 2 shows a method of forming the modified layer 2,
N ions 4 are ion-implanted into the molding base surface 1A at an acceleration voltage of 93 keV, an acceleration current of 2 mA, and an implantation amount of 2 × 10 17 ions / cm 2 . Thereafter, as shown in FIG. 3, the mold base material 1 is inverted, and the molding base surface 1A is coated with a coating material 5 made of chromium.
To face. Then, N ions 4 are applied to the coating material 5 as an accelerating voltage of 92 keV, an accelerating current of 0.5 mA, and an implantation amount of 1 × 10 15.
ion implantation at ion / cm 2 , and at the same time, Cr-N sputtered particles 6 are grown on the modified layer 2 obtained by modifying the surface of the molding base surface 1A of the mold base material 1 by sputtering.
The CrN film 3 is formed. The thickness of the formed CrN film is d =
1.2 μm, Vickers hardness Hv = 1410k
gf / mm 2 (25 gf load), surface roughness Rmax =
It was 0.062, which was not different from that after polishing.

【0010】この光学素子成形用型を用いてSF系光学
ガラスを20000ショット以上連続成形したところ、
面粗度Rmax=0.059μmで、変化が認められ
ず、膜剥離もなく微小剥離から生じる微小焼き付きも発
生しなかった。
When SF type optical glass was continuously molded for 20000 shots or more using this optical element molding die,
When the surface roughness Rmax was 0.059 μm, no change was observed, and neither film peeling nor micro-image sticking caused by micro-peeling occurred.

【実施例2】図4ないし図6は本発明の実施例2を示
す。図4に示すようにSiCから成る型基材11と、型
基材11の成膜基礎面11Aの表面を改質した改質層1
2と、その改質層12の上に被覆された窒化クロムから
なる窒化被膜13とから構成されている。型基材11の
成形基礎面11Aは、研削,研磨加工を施し、表面粗度
Rmax=0.08μm以下に仕上げられている。この
窒化珪素の改質層12を形成するため、図5に示すよう
に、成形基礎面11AにNイオン14を加速電圧96k
eV、加速電流2.4mA、注入量2×1017ion/
cm2 でイオン注入する。その後、図6に示すように型
基材11を反転して、その成形基礎面11Aをクロムか
らなる被膜材料15に対向させ、被膜材料15にNイオ
ン14を加速電圧94keV、加速電流0.6mA、注
入量2×1015ion/cm2 でイオン注入すると同時
に、実施例1と同様にCrN膜13を形成した。CrN
膜13の膜厚はd=1.1μmであり、ビッカース硬度
はHv=1860kgf/mm2 、面粗度はRmax=
0.079で、研磨加工後と差がなかった。
Second Embodiment FIGS. 4 to 6 show a second embodiment of the present invention. As shown in FIG. 4, a mold base material 11 made of SiC and a modified layer 1 obtained by modifying the surface of a film-forming base surface 11A of the mold base material 11.
2 and a nitrided coating 13 made of chromium nitride coated on the modified layer 12. The molding base surface 11A of the mold base material 11 is ground and polished so that the surface roughness Rmax is 0.08 μm or less. To form the modified layer 12 of silicon nitride, as shown in FIG. 5, N ions 14 are accelerated on the molding base surface 11A at an acceleration voltage of 96 k.
eV, accelerating current 2.4 mA, injection amount 2 × 10 17 ion /
Ion implantation is performed at cm 2 . Thereafter, as shown in FIG. 6, the mold base 11 is turned over so that the molding base surface 11A faces the coating material 15 made of chromium, and N ions 14 are accelerated in the coating material 15 at an acceleration voltage of 94 keV and an acceleration current of 0.6 mA. Simultaneously with the ion implantation at a dose of 2 × 10 15 ions / cm 2 , the CrN film 13 was formed in the same manner as in Example 1. CrN
The thickness of the film 13 is d = 1.1 μm, the Vickers hardness is Hv = 1860 kgf / mm 2 , and the surface roughness is Rmax =
It was 0.079, which was not different from that after polishing.

【0011】この光学素子成形用型を用いてSF系光学
ガラスを20000ショット以上連続成形したところ、
面粗度Rmax=0.077μmで、変化が認められ
ず、膜剥離もなく微小剥離から生じる微小焼き付きも発
生しなかった。なお、SiCからなる型基材に高周波ス
パッタリング成膜法を用いて、中間層としてのCr膜を
第1層目に施し、Cr膜上にCr- N膜を施し、更にC
r-N膜上にCr- C膜を施した従来例の成形用型を上
記実施例と同様の条件で成形に供した結果、成形面に1
00μm以上の微小剥離が生じてガラスの微小焼付きが
おこり、成形品も100μm以上のクレーター状の欠陥
を生じた。
When SF type optical glass was continuously molded for 20000 shots or more using this optical element molding die,
When the surface roughness Rmax was 0.077 μm, no change was observed, no film peeling occurred, and no fine image sticking caused by fine peeling occurred. By using a high frequency sputtering film forming method on a mold base made of SiC, a Cr film as an intermediate layer is applied to the first layer, a Cr-N film is applied on the Cr film, and then C
The molding die of the conventional example in which the Cr-C film was formed on the r-N film was subjected to molding under the same conditions as in the above-mentioned example, and as a result, 1
Micro-peeling of 00 μm or more occurred, micro-seizure of glass occurred, and the molded product also had crater-like defects of 100 μm or more.

【0012】[0012]

【発明の効果】本発明は超硬合金あるいはセラミックス
などの型基材の表層内部にイオン注入で、密着性を補助
する窒化層を形成し、さらにイオン注入成膜法により密
着効率の高い窒化クロム膜を成長させるため,膜剥離面
に発生するガラスの焼き付きが無くなり、金型寿命が延
命化する。
EFFECTS OF THE INVENTION The present invention forms a nitride layer for assisting adhesion by ion implantation inside the surface of a mold base material such as cemented carbide or ceramics, and further uses a ion implantation film forming method to achieve high adhesion efficiency of chromium nitride. Since the film is grown, the seizure of the glass that occurs on the peeled surface of the film is eliminated and the life of the mold is extended.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例1の断面図。FIG. 1 is a sectional view of a first embodiment of the present invention.

【図2】本発明の実施例1の製造工程の断面図。FIG. 2 is a sectional view of a manufacturing process according to the first embodiment of the present invention.

【図3】本発明の実施例1の製造工程の断面図。FIG. 3 is a sectional view of a manufacturing process according to the first embodiment of the present invention.

【図4】本発明の実施例2の断面図。FIG. 4 is a sectional view of a second embodiment of the present invention.

【図5】本発明の実施例2の製造工程の断面図。FIG. 5 is a sectional view of a manufacturing process according to a second embodiment of the present invention.

【図6】本発明の実施例2の製造工程の断面図。FIG. 6 is a sectional view of a manufacturing process according to a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 型基材 2 窒化層 3 窒化クロム膜 1 type base material 2 nitride layer 3 chromium nitride film

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 型基材の表層内部にイオン注入により窒
化層を形成し、この窒化層上にイオン注入成膜により窒
化クロム膜を積層したことを特徴とする光学素子成形用
型。
1. An optical element molding die, characterized in that a nitride layer is formed inside the surface layer of a mold base material by ion implantation, and a chromium nitride film is laminated on the nitride layer by ion implantation film formation.
JP3292432A 1991-10-11 1991-10-11 Manufacturing method of optical element molding die and optical element molding die Expired - Fee Related JP3049132B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3292432A JP3049132B2 (en) 1991-10-11 1991-10-11 Manufacturing method of optical element molding die and optical element molding die

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3292432A JP3049132B2 (en) 1991-10-11 1991-10-11 Manufacturing method of optical element molding die and optical element molding die

Publications (2)

Publication Number Publication Date
JPH05105460A true JPH05105460A (en) 1993-04-27
JP3049132B2 JP3049132B2 (en) 2000-06-05

Family

ID=17781719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3292432A Expired - Fee Related JP3049132B2 (en) 1991-10-11 1991-10-11 Manufacturing method of optical element molding die and optical element molding die

Country Status (1)

Country Link
JP (1) JP3049132B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2304736A (en) * 1995-08-29 1997-03-26 Yasuaki Sakamoto ion injected mold for pressing a molded glass substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2304736A (en) * 1995-08-29 1997-03-26 Yasuaki Sakamoto ion injected mold for pressing a molded glass substrate
GB2304736B (en) * 1995-08-29 1999-09-22 Yasuaki Sakamoto Ion injected mold for pressing a molded glass substrate

Also Published As

Publication number Publication date
JP3049132B2 (en) 2000-06-05

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