JPH044192Y2 - - Google Patents
Info
- Publication number
- JPH044192Y2 JPH044192Y2 JP1983020010U JP2001083U JPH044192Y2 JP H044192 Y2 JPH044192 Y2 JP H044192Y2 JP 1983020010 U JP1983020010 U JP 1983020010U JP 2001083 U JP2001083 U JP 2001083U JP H044192 Y2 JPH044192 Y2 JP H044192Y2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- semiconductor
- component
- bridge circuit
- elastic support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000001133 acceleration Effects 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 2
- 230000002463 transducing effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Description
【考案の詳細な説明】
〔考案の技術分野〕
本考案は振動物体などに加わる圧力を検出する
場合に用いる圧力変換器に関するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a pressure transducer used for detecting pressure applied to a vibrating object or the like.
近時、頻繁に用いられつつある半導体圧力変換
器は、旧来の歪ゲージ式圧力変換器に比べて感度
や周波数特性が優れているという利点がある。し
かし、この半導体圧力変換器を振動物体などに実
装した場合、振動物体の加速度成分も含めて検出
してしまい、圧力成分のみの出力信号を得ること
ができないという欠点を有している。
Semiconductor pressure transducers, which are being used frequently these days, have advantages over conventional strain gauge pressure transducers in that they have superior sensitivity and frequency characteristics. However, when this semiconductor pressure transducer is mounted on a vibrating object or the like, it has the disadvantage that it detects the acceleration component of the vibrating object as well, making it impossible to obtain an output signal of only the pressure component.
本考案はこのような欠点に鑑みなされたもの
で、その目的は圧力成分のみの出力信号を取り出
すことができる圧力変換器を提供することにあ
る。
The present invention was devised in view of these drawbacks, and its purpose is to provide a pressure transducer from which an output signal consisting only of pressure components can be extracted.
本考案は、半導体圧力変換素子を真空容器の外
部受圧面に取付ける一方、真空容器内部において
所定質量の重りを支持する弾性支持体を設けると
共に、この弾性支持体の歪みを検出する半導体歪
み検出素子を設け、さらにこれら半導体圧力変換
素子および半導体歪み検出素子をそれぞれ構成要
素とする第１および第２のブリツジ回路を設け、
これら２つのブリツジ回路の出力信号を差動増幅
器に入力することにより、この差動増幅器から振
動加速度成分を含まない圧力成分のみの信号を取
出すように構成したものである。 In the present invention, a semiconductor pressure transducer element is attached to the external pressure receiving surface of a vacuum vessel, an elastic support body is provided inside the vacuum vessel to support a weight of a predetermined mass, and a semiconductor strain detection element is installed to detect the strain of this elastic support body. further provided with first and second bridge circuits each having the semiconductor pressure conversion element and the semiconductor strain detection element as constituent elements,
By inputting the output signals of these two bridge circuits to a differential amplifier, a signal containing only the pressure component and not including the vibration acceleration component is extracted from the differential amplifier.
第１図は本考案による圧力変換器の構造を示す
断面図、第２図はその電気回路を示す図である。
これらの図において、半導体圧力変換素子１は真
空容器２の外部受圧ダイヤフラム２Ａ表面に取付
けられている。一方、真空容器２の内部空間には
所定質量の重り３が弾性支持板４によつて弾性的
に支持されると共に、この弾性支持板４にはこの
支持板４の歪みを検出する半導体歪み検出素子５
が取付けられている。そして、半導体圧力変換素
子１は所定の抵抗値を有する抵抗器RP1〜RP3と
ブリツジ接続され、また半導体歪み検出素子５も
所定の抵抗値を有する抵抗器RA1〜RA3とブリツ
ジ接続されている。これによつて、半導体圧力変
換素子１、抵抗器RP1〜RP3および電源E1とから
成る第１のブリツジ回路６が形成され、また半導
体歪み検出素子５、抵抗器RA1〜RA3および電源
E2とから成る第２のブリツジ回路７が形成され
ている。
FIG. 1 is a sectional view showing the structure of a pressure transducer according to the present invention, and FIG. 2 is a diagram showing its electric circuit.
In these figures, a semiconductor pressure transducer element 1 is attached to the surface of an external pressure receiving diaphragm 2A of a vacuum vessel 2. On the other hand, a weight 3 of a predetermined mass is elastically supported in the internal space of the vacuum container 2 by an elastic support plate 4, and a semiconductor strain sensor for detecting distortion of the support plate 4 is provided on the elastic support plate 4. Element 5
is installed. The semiconductor pressure transducing element 1 is bridge-connected to resistors R P1 to R P3 having predetermined resistance values, and the semiconductor strain detection element 5 is also bridge-connected to resistors R A1 to R A3 having predetermined resistance values. ing. As a result, a first bridge circuit 6 consisting of the semiconductor pressure transducing element 1, the resistors R P1 to R P3 and the power supply E 1 is formed, and the semiconductor strain detecting element 5, the resistors R A1 to R A3 and the first bridge circuit 6 are formed. power supply
A second bridge circuit 7 consisting of E 2 is formed.
この第１のブリツジ回路６の出力電圧信号V1
はバツフアアンプ８を介して作動増幅器１０の
（＋）入力端に入力され、また第２のブリツジ回
路７の出力電圧信号V2はバツフアアンプ９を介
して差動増幅器１０の（−）入力端に入力されて
いる。 The output voltage signal V 1 of this first bridge circuit 6
is inputted to the (+) input terminal of the differential amplifier 10 via the buffer amplifier 8, and the output voltage signal V2 of the second bridge circuit 7 is inputted to the (-) input terminal of the differential amplifier 10 via the buffer amplifier 9. has been done.
このような構成の圧力変換器は気体または流体
などの外圧を受ける物体の受圧面に真空容器２の
受圧ダイヤフラム面を表側にして取付けられる。 The pressure transducer having such a configuration is attached to the pressure receiving surface of an object such as gas or fluid that receives external pressure, with the pressure receiving diaphragm surface of the vacuum container 2 facing upward.
このような構成において、真空容器２を振動物
体に取付けた場合、半導体圧力変換素子１の抵抗
値が振動物体に対する外圧に応じて変化するた
め、第１のブリツジ回路６からは外圧に応じた電
圧信号V1が出力される。一方、振動物体の振動
に伴つて重り３も振動して弾性支持板４を歪ませ
るため、第２のブリツジ回路６からは振動物体の
振動加速度αに応じた振幅の電圧信号V2が出力
される。 In such a configuration, when the vacuum container 2 is attached to a vibrating object, the resistance value of the semiconductor pressure conversion element 1 changes depending on the external pressure applied to the vibrating object, so the first bridge circuit 6 outputs a voltage according to the external pressure. A signal V 1 is output. On the other hand, since the weight 3 also vibrates with the vibration of the vibrating object and distorts the elastic support plate 4, the second bridge circuit 6 outputs a voltage signal V 2 with an amplitude corresponding to the vibration acceleration α of the vibrating object. Ru.
この場合、電圧信号V1には第３図ａに示すよ
うに振動物体の加速度成分P〓と外圧成分P〓との２
つの成分が含まれる。しかし、この電圧信号V1
は差動増幅器１０の（＋）入力端に供給され、こ
こにおいて振動物体の振動加速度αに対応した電
圧信号V2（第３図ｂ）との差が求められる。この
結果、電圧信号V1に含まれる加速度成分P〓は電
圧信号V2によつて打消され、差動増幅器１０か
らは振動物体に加わる外圧成分のみに対応した電
圧信号Ｖが出力されるようになる。この場合、電
圧信号Ｖは絶対圧に対応したものとなる。 In this case, the voltage signal V 1 includes the acceleration component P〓 of the vibrating object and the external pressure component P〓, as shown in Fig. 3a.
Contains one ingredient. But this voltage signal V 1
is supplied to the (+) input of the differential amplifier 10, where the difference from the voltage signal V 2 (FIG. 3b) corresponding to the vibration acceleration α of the vibrating object is determined. As a result, the acceleration component P〓 included in the voltage signal V1 is canceled by the voltage signal V2 , and the differential amplifier 10 outputs a voltage signal V corresponding only to the external pressure component applied to the vibrating object. Become. In this case, the voltage signal V corresponds to absolute pressure.
以上の説明から明らかなように本考案は、半導
体圧力変換素子を真空容器の受圧面に取付ける一
方で、真空容器の内部で所定質量の重みを支持す
る弾性支持板を設け、物体の振動に伴う加速度を
この弾性支持板の歪みによつて検出し、この歪み
検出信号によつて半導体圧力変換素子の出力信号
に含まれる加速度成分をキャンセルするように構
成したものである。このため、加速度成分を含ま
ない圧力成分のみの信号を取出すことができる。
従つて、例えばタービンの羽根に作用する流体の
圧力を測定する場合などに極めて都合が良いもの
となる。
As is clear from the above description, in the present invention, a semiconductor pressure transducer is attached to the pressure receiving surface of a vacuum vessel, while an elastic support plate is provided inside the vacuum vessel to support the weight of a predetermined mass. The acceleration is detected by the distortion of the elastic support plate, and the distortion detection signal is used to cancel the acceleration component contained in the output signal of the semiconductor pressure transducer element. Therefore, it is possible to extract a signal containing only the pressure component and not the acceleration component.
Therefore, it is extremely convenient, for example, when measuring the pressure of fluid acting on the blades of a turbine.
第１図は本考案の実施例を示す断面構成図、第
２図はその電気回路を示す図、第３図はブリツジ
回路の出力電圧と振動加速度との関係を示すグラ
フである。
１……半導体圧力変換素子、２……真空容器、
３……重り、４……弾性支持板、５……半導体歪
み検出素子、６，７……ブリツジ回路、１０……
差動増幅器。
FIG. 1 is a cross-sectional configuration diagram showing an embodiment of the present invention, FIG. 2 is a diagram showing its electric circuit, and FIG. 3 is a graph showing the relationship between the output voltage of the bridge circuit and the vibration acceleration. 1... Semiconductor pressure conversion element, 2... Vacuum container,
3... Weight, 4... Elastic support plate, 5... Semiconductor strain detection element, 6, 7... Bridge circuit, 10...
Differential amplifier.
Claims (1)
の受圧面の外面側に取付けられた半導体圧力変換
素子と、真空容器の内部空間に所定質量の重りを
指示する弾性支持体と、この弾性支持体の歪みを
検出する半導体歪み検出素子と、前記半導体圧力
交換素子を構成要素とする第１のブリツジ回路
と、前記半導体歪み検出素子を構成要素とする第
２のブリツジ回路と、これら第１および第２のブ
リツジ回路の出力信号を入力とする差動増幅器と
を備え、この差動増幅器から加速度成分を含まな
い圧力成分のみの信号を取出すように構成された
圧力変換器。 A vacuum container with a certain peripheral wall as a pressure receiving surface, a semiconductor pressure transducer element attached to the outer surface of the pressure receiving surface, an elastic support body that directs a weight of a predetermined mass to the internal space of the vacuum container, and this elastic support. a semiconductor strain detection element for detecting body strain; a first bridge circuit having the semiconductor pressure exchange element as a component; a second bridge circuit having the semiconductor strain detection element as a component; A pressure transducer comprising a differential amplifier that receives an output signal of a second bridge circuit as an input, and is configured to extract a signal containing only a pressure component and not an acceleration component from the differential amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001083U JPS59127147U (en) | 1983-02-16 | 1983-02-16 | pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001083U JPS59127147U (en) | 1983-02-16 | 1983-02-16 | pressure transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59127147U JPS59127147U (en) | 1984-08-27 |
| JPH044192Y2 true JPH044192Y2 (en) | 1992-02-07 |
Family
ID=30151146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001083U Granted JPS59127147U (en) | 1983-02-16 | 1983-02-16 | pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59127147U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9574964B2 (en) * | 2015-07-07 | 2017-02-21 | Toyota Jidosha Kabushiki Kaisha | Mobile computer atmospheric barometric pressure system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5524685A (en) * | 1978-08-11 | 1980-02-21 | Matsushita Electric Ind Co Ltd | Pressure sensor |
-
1983
- 1983-02-16 JP JP2001083U patent/JPS59127147U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5524685A (en) * | 1978-08-11 | 1980-02-21 | Matsushita Electric Ind Co Ltd | Pressure sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59127147U (en) | 1984-08-27 |
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