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JPH04367826A - Optical modulating element - Google Patents

Optical modulating element

Info

Publication number
JPH04367826A
JPH04367826A JP14445291A JP14445291A JPH04367826A JP H04367826 A JPH04367826 A JP H04367826A JP 14445291 A JP14445291 A JP 14445291A JP 14445291 A JP14445291 A JP 14445291A JP H04367826 A JPH04367826 A JP H04367826A
Authority
JP
Japan
Prior art keywords
optical modulation
line
modulation element
optical
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14445291A
Other languages
Japanese (ja)
Inventor
Tsuyoshi Kamimura
強 上村
Hiroshi Yamazoe
山添 博司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14445291A priority Critical patent/JPH04367826A/en
Publication of JPH04367826A publication Critical patent/JPH04367826A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To obtain the optical modulating element of high quality with an optical address by utilizing an optical switching element. CONSTITUTION:The photoconductor part 12 of an (N)th line electrode 11 (scanning electrode) is irradiated with linear line by, for example, an EL element from behind and then the resistance of the photoconductor part 12 decreases, thereby applying a voltage pulse from a voltage supply source 14 through a bus bar. At this time, a display signal voltage is applied from the line electrode 15 (signal electrode) of the other substrate to apply an electric field corresponding to a target pattern to the optical modulating element (e.g. liquid crystal element) sandwiched between both the substrates. Similarly, an (N+1)th line is selected and a pattern is written. This operation is repeated in order to make a large-capacity matrix display.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は光学変調素子、シャッタ
ー、表示装置に関し、特にスイッチング素子を有する大
容量な光学変調素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical modulation element, a shutter, and a display device, and more particularly to a large-capacity optical modulation element having a switching element.

【0002】0002

【従来の技術】従来、光学変調素子は大容量となるとコ
ントラスト、明るさなどが落ちてしまうと言う欠点があ
った。
2. Description of the Related Art Conventionally, optical modulation elements have had the disadvantage that contrast, brightness, etc. decrease when the capacity increases.

【0003】特に表示素子として現在広く用いられてい
るSTN方式(スーパーツイステッドネマチック方式)
では大容量化にともないコントラスト、明るさ、応答時
間などに欠点が生じ、表示品位が低下してしまうと言う
問題点があった。
[0003] In particular, the STN method (super twisted nematic method) is currently widely used as a display element.
However, as the capacity increases, there are problems with contrast, brightness, response time, etc., and display quality deteriorates.

【0004】このような欠点をカバーするためにアクテ
ィブマトリクス方式と呼ばれる各画素にスイッチング素
子を設けた方式が現在、検討されつつある。このような
方式には各画素にトランジスタ素子を設けたもの(これ
をTFT方式と呼ぶ)、あるいは2端子素子(MIM方
式:メタルインシュレーテッドメタル、あるいはダイオ
ード素子を設けたものなど)を設けたものなどがあげら
れる。
In order to overcome these drawbacks, a system called an active matrix system in which each pixel is provided with a switching element is currently being considered. In such a method, each pixel is provided with a transistor element (this is called a TFT method), or a two-terminal element (MIM method: metal insulated metal, or a method with a diode element, etc.) is provided. Things can be given.

【0005】これらの方式では大容量化に伴う表示品位
の低下は少ないものの製造工程が複雑である。
[0005] In these systems, although there is little deterioration in display quality due to increase in capacity, the manufacturing process is complicated.

【0006】[0006]

【発明が解決しようとする課題】このような大容量化に
伴う品位の低下に対してアクティブマトリクス方式は有
用でははあるが構成が複雑、あるいは工程が複雑なため
に歩留まり、タクト性に劣り、結果としてコストが高い
という課題があった。
[Problems to be Solved by the Invention] Although the active matrix method is useful in dealing with the quality deterioration that accompanies the increase in capacity, it has a complicated structure or a complicated process, resulting in poor yield and tact time. As a result, there was a problem that the cost was high.

【0007】本発明は上記の欠点を解消し、大容量な光
学変調素子に適したアクティブ素子を提供することを目
的とする。
An object of the present invention is to eliminate the above-mentioned drawbacks and provide an active element suitable for a large-capacity optical modulation element.

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
に本発明は光によってスイッチングするアクティブ素子
を用いるものである。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention uses active elements that are switched by light.

【0009】[0009]

【作用】従来の電圧によってスイッチングさせていたア
クティブマトリクスではなく光によるスイッチングによ
って非選択波形印加を防ぐ。
[Operation] Application of non-selective waveforms is prevented by switching by light instead of the conventional active matrix switching by voltage.

【0010】例えば各画素にフォトダイオードを接続し
、ライン順次に光照射することでライン毎に電圧を印加
でき、表示品位を落とす非選択波形(以降クロストーク
と呼ぶ)をシャットアウトする作用を有し、大容量化に
伴う表示品位低下を防止できる。また、従来のアクティ
ブマトリクス方式と比較して簡略な構成であるため、低
コスト化が容易であるという作用を有する。
For example, by connecting a photodiode to each pixel and sequentially irradiating the lines with light, voltage can be applied to each line, which has the effect of shutting out unselected waveforms (hereinafter referred to as crosstalk) that degrade display quality. Therefore, deterioration in display quality due to increase in capacity can be prevented. Furthermore, since it has a simpler configuration than the conventional active matrix method, it has the effect of easily reducing costs.

【0011】[0011]

【実施例】以下、本発明の一実施例の光学変調素子につ
いて図面を参照しながら説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An optical modulation element according to an embodiment of the present invention will be described below with reference to the drawings.

【0012】(図2)に本発明の光学変調素子の構成図
を示す。同図においてガラス基板21上にインジウム・
スズ酸化物透明電極(以降ITO電極と呼ぶ)からなる
各画素22に硫化カドミウム(以降CdSと略す)から
なる光導電体部23を設置した。
FIG. 2 shows a configuration diagram of the optical modulation element of the present invention. In the same figure, indium
A photoconductor section 23 made of cadmium sulfide (hereinafter abbreviated as CdS) was installed in each pixel 22 made of a tin oxide transparent electrode (hereinafter referred to as an ITO electrode).

【0013】これらの画素はアルミニウムからなるライ
ン24(以降バスバーと呼ぶ)によってライン状に接続
されている。またITO電極22をライン状にエッチン
グ形成したもう片方の基板25を作製した。両基板上に
有機配向膜としてRN707(日産化学社製)を通常の
印刷法を用いて作製した。この後、両基板とも通常のラ
ビング法により90゜ツイスト構成の液晶パネルになる
ような配向処理を施した。
These pixels are connected in a line by lines 24 (hereinafter referred to as bus bars) made of aluminum. In addition, another substrate 25 on which ITO electrodes 22 were etched in a line shape was fabricated. RN707 (manufactured by Nissan Chemical Co., Ltd.) was formed as an organic alignment film on both substrates using a normal printing method. Thereafter, both substrates were subjected to an alignment treatment using a normal rubbing method so as to form a liquid crystal panel with a 90° twist configuration.

【0014】次に両基板を接着するためにシール樹脂2
6(三井東圧社製ストラクトボンド)を基板25の周囲
に通常法を用いてスクリーン印刷した。この後、基板2
5上に基板間調整のために5μmスペーサ(積水ファイ
ンケミカル社製ミクロパール)を密度約150個/平方
ミリで散布した後、基板11と貼合わせ、135℃で約
0.5Kg/平方センチの圧力で30分加圧硬化した後
、常圧150℃、2時間本硬化することで空パネルを作
製した。この時に上下のライン電極がクロスするように
それぞれ貼合わせた。
Next, sealing resin 2 is applied to bond both substrates.
6 (Structbond manufactured by Mitsui Toatsu Co., Ltd.) was screen printed around the substrate 25 using a conventional method. After this, board 2
After scattering 5 μm spacers (Micro Pearl manufactured by Sekisui Fine Chemical Co., Ltd.) on the substrate 5 at a density of about 150 spacers/square millimeter to adjust the distance between the substrates, the substrate 11 is bonded to the substrate 11 at a pressure of about 0.5 kg/square centimeter at 135°C. After curing under pressure for 30 minutes, a blank panel was produced by main curing at normal pressure of 150° C. for 2 hours. At this time, the upper and lower line electrodes were bonded together so that they crossed each other.

【0015】このように作製した空パネルにネマチック
液晶であるZLI4792(メルク社製)を用いて通常
の真空注入方式で液晶を注入し、液晶パネルを得た。光
供給手段としてはEL(エレクトロルミネッセンス)を
用いた。
A liquid crystal panel was obtained by injecting liquid crystal into the blank panel thus prepared using a nematic liquid crystal ZLI4792 (manufactured by Merck & Co., Ltd.) by a conventional vacuum injection method. EL (electroluminescence) was used as the light supply means.

【0016】(図3)に作製した本初明の光学変調素子
の一例の液晶パネルの断面構成図を示す。同図において
31は上下のガラス基板、32はITO電極、33は配
向膜、34は液晶層、35はシール樹脂を示している。
FIG. 3 shows a cross-sectional configuration diagram of a liquid crystal panel as an example of the optical modulation element manufactured by the present invention. In the figure, 31 indicates upper and lower glass substrates, 32 an ITO electrode, 33 an alignment film, 34 a liquid crystal layer, and 35 a sealing resin.

【0017】それぞれの画素の光導電体部36にEL3
7から光がライン状に照射できる様にし、また上下基板
のライン電極にはそれぞれ電圧供給源としてプログラム
電圧発生器を用いて種々の駆動波形が印加できるように
した。
EL3 is attached to the photoconductor portion 36 of each pixel.
Light can be emitted in a line from 7, and various drive waveforms can be applied to the line electrodes of the upper and lower substrates using program voltage generators as voltage supply sources.

【0018】(図1)に本発明の一例である光学変調素
子の実際の作動構成図を示す。同図においてN番目のラ
イン電極11(走査電極)の光導電体部12に後部から
EL13よりライン状に光が照射されて光導電体部12
の抵抗が低下し、電圧供給源14からバスバーを通して
電圧パルスが印加した。
FIG. 1 shows an actual operational configuration diagram of an optical modulation element which is an example of the present invention. In the figure, the photoconductor portion 12 of the Nth line electrode 11 (scanning electrode) is irradiated with light in a line form from the EL 13 from the rear.
The resistance of was reduced and a voltage pulse was applied from the voltage supply 14 through the bus bar.

【0019】このときにもう片方の基板のライン電極1
5(信号電極)には表示用の信号電圧を印加し、両基板
間に狭持された液晶層に目的のパターンに応じた電界を
印加した。次にN+1番目のライン16を選択し、同様
にELの照射を同期させて信号電圧を印加した。このと
きN番目のラインのELの照射は消しておいた。このよ
うに線順次に選択することで種々の表示パターンを示す
ことが出来た。
At this time, the line electrode 1 of the other substrate
A signal voltage for display was applied to 5 (signal electrode), and an electric field corresponding to a desired pattern was applied to the liquid crystal layer sandwiched between both substrates. Next, the N+1st line 16 was selected, and a signal voltage was applied while synchronizing the EL irradiation in the same manner. At this time, the EL irradiation on the Nth line was turned off. By selecting lines sequentially in this way, various display patterns could be shown.

【0020】尚、以上の説明では主としてELの光を用
いたがこれに限るものではなく、光シャッター素子(例
えば強誘電性液晶素子)を用いても可能であり、また、
光スイッチング素子としてもフォトダイオードも用いる
ことも十分可能であることは言うまでもない。
[0020] Although the above explanation mainly uses EL light, it is not limited to this, and it is also possible to use an optical shutter element (for example, a ferroelectric liquid crystal element).
It goes without saying that a photodiode can also be used as the optical switching element.

【0021】[0021]

【発明の効果】以上のように本発明は光によるアドレス
で光学変調を行う素子であり、大容量化に伴い表示品位
が低下しないという効果を有する。また従来のアクティ
ブマトリクス(TFTなど)に比較して製造工程が非常
に簡単になるためコストが低減できるという効果を有す
る。
As described above, the present invention is an element that performs optical modulation by addressing with light, and has the effect that the display quality does not deteriorate as the capacity increases. Furthermore, since the manufacturing process is much simpler than that of conventional active matrix (TFT, etc.), it has the effect of reducing costs.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一例である光学変調素子の実際の作動
構成図
FIG. 1: An actual operational configuration diagram of an optical modulation element that is an example of the present invention.

【図2】本発明の実施例の光学変調素子の構成図FIG. 2 is a configuration diagram of an optical modulation element according to an embodiment of the present invention.

【図3
】本発明の光学変調素子の一例の液晶パネルの断面構成
[Figure 3
] Cross-sectional configuration diagram of a liquid crystal panel as an example of the optical modulation element of the present invention

【符号の説明】[Explanation of symbols]

11  N番目のライン(走査電極) 12  光導電体部 13  EL 14  電圧供給源 15  ライン電極(信号電極) 11 Nth line (scanning electrode) 12 Photoconductor part 13 EL 14 Voltage supply source 15 Line electrode (signal electrode)

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】  マトリクス構成を有する光学変調素子
において走査線と光学変調が行われる部分との間に光に
よってスイッチングする素子を有することを特徴とする
光学変調素子。
1. An optical modulation element having a matrix configuration, comprising a light-switching element between a scanning line and a portion where optical modulation is performed.
【請求項2】  光学変調素子として液晶素子を用いた
ことを特徴とする光学変調素子。
2. An optical modulation element characterized in that a liquid crystal element is used as the optical modulation element.
【請求項3】  スイッチングする素子が光によって抵
抗が変化するものであることを特徴とする請求項1また
は2記載の光学変調素子。
3. The optical modulation element according to claim 1, wherein the switching element has a resistance that changes depending on light.
【請求項4】  スイッチングする素子がフォトダイオ
ードであることを特徴とする請求項1または2記載の光
学変調素子。
4. The optical modulation element according to claim 1, wherein the switching element is a photodiode.
【請求項5】  スイッチングする素子に光を線順次に
照射し、前記光学変調素子に電界を同期させて印加する
ことを特徴とする光学変調素子。
5. An optical modulation element, characterized in that a switching element is irradiated with light line-sequentially, and an electric field is synchronously applied to the optical modulation element.
【請求項6】  光学変調素子が液晶素子であることを
特徴とする請求5記載の光学変調素子。
6. The optical modulation element according to claim 5, wherein the optical modulation element is a liquid crystal element.
【請求項7】  スイッチングする素子に光を線順次に
照射させるためにエレクトロルミネッセンス素子を用い
たことを特徴とする請求項5記載の光学変調素子。
7. The optical modulation element according to claim 5, wherein an electroluminescence element is used to line-sequentially irradiate the switching element with light.
【請求項8】  スイッチングする素子に光を線順次に
照射するために光シャッター素子を設けたことを特徴と
する請求項5記載の光学変調素子。
8. The optical modulation element according to claim 5, further comprising an optical shutter element for irradiating the switching element with light line-sequentially.
【請求項9】  シャッター素子が強誘電性液晶素子で
あることを特徴とする請求項8記載の光学変調素子。
9. The optical modulation element according to claim 8, wherein the shutter element is a ferroelectric liquid crystal element.
JP14445291A 1991-06-17 1991-06-17 Optical modulating element Pending JPH04367826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14445291A JPH04367826A (en) 1991-06-17 1991-06-17 Optical modulating element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14445291A JPH04367826A (en) 1991-06-17 1991-06-17 Optical modulating element

Publications (1)

Publication Number Publication Date
JPH04367826A true JPH04367826A (en) 1992-12-21

Family

ID=15362574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14445291A Pending JPH04367826A (en) 1991-06-17 1991-06-17 Optical modulating element

Country Status (1)

Country Link
JP (1) JPH04367826A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6750936B2 (en) 2001-08-30 2004-06-15 Sharp Kabushiki Kaisha Display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6750936B2 (en) 2001-08-30 2004-06-15 Sharp Kabushiki Kaisha Display device

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