JPH04304372A - Multi-chamber vacuum treating device - Google Patents
Multi-chamber vacuum treating deviceInfo
- Publication number
- JPH04304372A JPH04304372A JP9142891A JP9142891A JPH04304372A JP H04304372 A JPH04304372 A JP H04304372A JP 9142891 A JP9142891 A JP 9142891A JP 9142891 A JP9142891 A JP 9142891A JP H04304372 A JPH04304372 A JP H04304372A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chamber
- vacuum processing
- handling arm
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 156
- 230000007246 mechanism Effects 0.000 claims description 2
- 230000008602 contraction Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、真空容器内で基板に対
して処理を行う真空処理装置に関し、特に基板を一枚ず
つ処理する真空処理室を複数個有する多室構造型の真空
処理装置に関する。[Industrial Application Field] The present invention relates to a vacuum processing apparatus for processing substrates in a vacuum container, and more particularly to a multi-chamber vacuum processing apparatus having a plurality of vacuum processing chambers for processing substrates one by one. Regarding.
【0002】0002
【従来の技術】現在、半導体産業をはじめとする数多く
の分野で真空処理装置が用いられている。真空処理装置
には、基板の表面に薄膜を形成するためのスパッタリン
グ装置や、CVD装置、また逆に基板表面をエッチング
するためのドライエッチング装置等がある。近年、LS
Iの高集積化による配線の微細化、多層化に伴い、異な
った材質の薄膜を各々異なった条件下で連続形成したり
、あるいはスパッタ,CVD,ドライエッチ等の異種の
プロセスを基板を大気に晒すことなく、真空中で連続し
て行いたいという要求が強くなってきた。これらの要求
に対し、独立した排気系を有する真空処理室を複数個備
えた多室構造型の真空処理装置が開発されている。多室
構造型真空処理装置は、マルチチャンバー装置とも呼ば
れ、各室が完全に独立しているために、スパッタ材料、
又は反応生成物等の物質や、プロセスガス等の相互コン
タミネーションが遮断されると共に、各室毎に異なった
条件下で基板処理を行うことができるという利点を有し
ている。処理の順序も任意に選択可能であり、一台の装
置で様々な使い方をすることができる。2. Description of the Related Art Vacuum processing equipment is currently used in many fields including the semiconductor industry. The vacuum processing apparatus includes a sputtering apparatus for forming a thin film on the surface of a substrate, a CVD apparatus, and a dry etching apparatus for etching the surface of the substrate. In recent years, L.S.
As wiring becomes finer and more multilayered due to higher integration of I, thin films of different materials are continuously formed under different conditions, or different processes such as sputtering, CVD, and dry etching are applied to the substrate in the atmosphere. There has been a growing demand for continuous processing in a vacuum without exposure. In response to these demands, a multi-chamber vacuum processing apparatus having a plurality of vacuum processing chambers each having an independent exhaust system has been developed. Multi-chamber structured vacuum processing equipment is also called multi-chamber equipment, and since each chamber is completely independent, sputtering materials,
It also has the advantage that mutual contamination of substances such as reaction products and process gases is blocked, and that substrate processing can be performed under different conditions in each chamber. The order of processing can also be arbitrarily selected, and a single device can be used in a variety of ways.
【0003】一般に多室構造型の真空処理装置は、図3
Aに示すように中央に位置する搬送室1の周囲に、基板
が収納された基板収納カセット2を大気状態において出
し入れするためのロードロック室3と、複数個の真空処
理室4a,真空処理室4b,真空処理室4c,真空処理
室4dとが配設され、各真空処理室4a〜4d及びロー
ドロック室3と搬送室1との間を仕切り弁5a,5b,
5c,5d,5eを介して接続させた構造となっており
、各室はそれぞれ独立した真空ポンプにより排気される
。図3Aは真空処理室を4室有する例であるが、その数
は用途に応じて変化する。一般に真空処理室を3〜5室
有する場合が多い。搬送室1の内部には、基板6を搬送
するための基板ハンドリングアーム7が備えられており
、基板ハンドリングアーム7が点0を中心とする回転運
動及び伸縮運動を行うことにより、ロードロック室3及
び各真空処理室4a,4b,4c,4dに対して基板6
がアクセスされる。[0003]Generally, a multi-chamber structure type vacuum processing apparatus is shown in FIG.
As shown in A, around the transfer chamber 1 located in the center, there is a load lock chamber 3 for loading and unloading substrate storage cassettes 2 containing substrates in atmospheric conditions, a plurality of vacuum processing chambers 4a, and a vacuum processing chamber. 4b, a vacuum processing chamber 4c, and a vacuum processing chamber 4d are provided, and gate valves 5a, 5b,
The chambers are connected via 5c, 5d, and 5e, and each chamber is evacuated by an independent vacuum pump. Although FIG. 3A shows an example having four vacuum processing chambers, the number changes depending on the application. Generally, it often has 3 to 5 vacuum processing chambers. A substrate handling arm 7 for transferring the substrate 6 is provided inside the transfer chamber 1, and the substrate handling arm 7 rotates around point 0 and expands and contracts to move the substrate 6 to the load lock chamber 3. and a substrate 6 for each vacuum processing chamber 4a, 4b, 4c, 4d.
is accessed.
【0004】一方、各真空処理室4a,4b,4c,4
dの内部には、基板を載せるための基板ステージ8a,
8b,8c,8dがあり、各基板ステージには、鉛直方
向に直線運動を行う基板リフター13a,13b,13
c,13dが内蔵されている。図3B(a)は真空処理
室4aを示す平面図、図3B(b)は、真空処理室4a
を搬送室1側より見た側面図である。図3B(b)に示
すように、基板リフター13aは基板6を下方より支持
し、また位置IとIIの間で直線運動を行うことにより
基板ステージ8aと基板ハンドリングアーム7との間で
基板6の受け渡しをする役目を持つ。真空処理室での処
理終了後、処理済み基板を真空処理室から搬送室へ戻す
動作、及び処理前基板を搬送室から真空処理室へ送りこ
む動作をフローチャートで示したものが図4(a),(
b)である。また、真空処理室4a→4b→4c→4d
の順序で処理を行う場合の各室における基板搬送状態遷
移を下記の表2に示す。On the other hand, each vacuum processing chamber 4a, 4b, 4c, 4
Inside d, a substrate stage 8a for placing a substrate,
8b, 8c, and 8d, and each substrate stage has substrate lifters 13a, 13b, and 13 that move linearly in the vertical direction.
c, 13d are built-in. FIG. 3B(a) is a plan view showing the vacuum processing chamber 4a, and FIG. 3B(b) is a plan view showing the vacuum processing chamber 4a.
FIG. 2 is a side view of FIG. As shown in FIG. 3B(b), the substrate lifter 13a supports the substrate 6 from below, and moves the substrate 6 between the substrate stage 8a and the substrate handling arm 7 by linearly moving between positions I and II. It has the role of receiving and receiving. After the processing in the vacuum processing chamber is completed, a flow chart showing the operation of returning the processed substrate from the vacuum processing chamber to the transfer chamber and the operation of transporting the unprocessed substrate from the transfer chamber to the vacuum processing chamber is shown in FIG. 4(a). (
b). Also, the vacuum processing chamber 4a → 4b → 4c → 4d
Table 2 below shows the transition of the substrate transport state in each chamber when processing is performed in the following order.
【0005】表2中の搬送室,真空処理室,ロードロッ
ク室の欄の数字は、1枚目の基板,2枚目の基板,3枚
目の基板というように何枚目の基板であるかを意味し、
また基板ハンドリングアームの動作の欄の数字は、回転
動作については隣接する室への回転、すなわち5÷36
0=72度を1としたときの動作回数を、伸縮動作につ
いては(伸び+縮み)を1としたときの動作回数を示し
ている。[0005] The numbers in the columns of transfer chamber, vacuum processing chamber, and load lock chamber in Table 2 indicate the number of substrates, such as the first substrate, second substrate, third substrate, etc. means,
Also, the numbers in the operation column of the substrate handling arm indicate rotation to the adjacent chamber, i.e. 5÷36.
The number of operations is shown when 0=72 degrees is set to 1, and for the expansion/contraction operation, the number of operations is shown when (extension + contraction) is set to 1.
【0006】[0006]
【表2】[Table 2]
【0007】[0007]
【発明が解決しようとする課題】上述した従来の多室構
造型真空処理装置では、処理済み基板を真空処理室から
搬送室へ戻す一連の動作において、基板ハンドリングア
ームが伸びの動作をする際、基板ハンドリングアームは
基板を載せていない。一方、処理前基板を真空処理室へ
送り込む一連の動作では、基板ハンドリングアームが縮
みの動作をする際、基板ハンドリングアームは基板を載
せていない。このように基板ハンドリングアームが実際
に基板を載せて搬送するのは、その全体の動作のうちの
約半分であり、このため、非常に搬送の効率が悪く時間
を有していた。図3Aのように4つの真空処理室を有す
る多室構造型真空処理装置では、真空処理室4a→4b
→4c→4dの順序で各室毎に60秒間基板処理を行っ
た場合のスループットは約20枚/Hrと低い。[Problems to be Solved by the Invention] In the above-mentioned conventional multi-chamber structure type vacuum processing apparatus, when the substrate handling arm makes an extending motion in a series of operations for returning the processed substrate from the vacuum processing chamber to the transfer chamber, The board handling arm does not carry any board. On the other hand, in a series of operations for sending a substrate to be processed into a vacuum processing chamber, when the substrate handling arm performs a retracting operation, the substrate handling arm does not place a substrate on it. In this way, the substrate handling arm actually places and transports the substrate for about half of its entire operation, and as a result, the transport efficiency is very low and it takes a long time. In a multi-chamber structured vacuum processing apparatus having four vacuum processing chambers as shown in FIG. 3A, vacuum processing chambers 4a→4b
When substrate processing is performed for 60 seconds in each chamber in the order of →4c→4d, the throughput is as low as about 20 sheets/hr.
【0008】このように従来の多室構造型真空処理装置
は、プロセス面では多くの利点を有している反面、スル
ープットが低くなるという欠点を有していた。As described above, while the conventional multi-chamber vacuum processing apparatus has many advantages in terms of process, it also has the disadvantage of low throughput.
【0009】本発明の目的は、各真空処理室に対する基
板ハンドリングアームの1回の往復工程により、処理済
み基板と処理前基板との差替えを行うことを可能とした
多室構造型真空処理装置を提供することにある。An object of the present invention is to provide a multi-chamber structure type vacuum processing apparatus in which a processed substrate and an unprocessed substrate can be replaced by one reciprocating process of the substrate handling arm to each vacuum processing chamber. It is about providing.
【0010】0010
【課題を解決するための手段】前記目的を達成するため
、本発明に係る多室構造型真空処理装置においては、基
板を一枚ずつ処理する真空処理室を搬送室の周囲に複数
個配設させた多室構造型真空処理装置であって、前記搬
送室と各真空処理室との間で基板の搬出入を行うための
基板ハンドリングアームに2個の基板受けを備え、各真
空処理室内部に基板を裏面より支持して鉛直方向に移動
させるための基板リフター機構を2組備えたものである
。[Means for Solving the Problems] In order to achieve the above object, in the multi-chamber vacuum processing apparatus according to the present invention, a plurality of vacuum processing chambers for processing substrates one by one are arranged around the transfer chamber. It is a multi-chamber structure type vacuum processing apparatus equipped with two substrate holders on a substrate handling arm for loading and unloading substrates between the transfer chamber and each vacuum processing chamber. It is equipped with two sets of substrate lifter mechanisms for supporting the substrate from the back side and moving it in the vertical direction.
【0011】[0011]
【作用】本発明の多室構造型真空処理装置は、搬送室内
に2つの基板受けを有する基板ハンドリングアームを備
え、かつ、各真空処理室内に各々2つの基板リフターを
備えており、以下に示す順序で処理済み基板と処理前基
板との入れ替え動作を行う。まず真空処理室での処理終
了後、処理済み基板は片方の基板リフターによって基板
ステージから持ち上げられた後、処理前基板を載せた基
板ハンドリングアームが真空処理室内へ伸びてくる。こ
の状態で前記処理済み基板が基板ハンドリングアームの
空いている方の基板受けへ載せられ、また処理前基板が
もう一方の基板リフターにより基板受けから持ち上げら
れる。この後、基板ハンドリングアームが搬送室へ縮み
処理前基板を載せた基板リフターが下降することにより
、処理前基板は基板ステージ上に載せられ、処理済み基
板と処理前基板との入れ替えが完了する。[Operation] The multi-chamber structured vacuum processing apparatus of the present invention is equipped with a substrate handling arm having two substrate holders in a transfer chamber, and two substrate lifters in each vacuum processing chamber, as shown below. An operation of exchanging the processed substrate and the unprocessed substrate is performed in this order. First, after processing in the vacuum processing chamber, the processed substrate is lifted from the substrate stage by one of the substrate lifters, and then the substrate handling arm carrying the unprocessed substrate extends into the vacuum processing chamber. In this state, the processed substrate is placed on the vacant substrate holder of the substrate handling arm, and the unprocessed substrate is lifted from the substrate holder by the other substrate lifter. Thereafter, the substrate handling arm retracts into the transfer chamber and the substrate lifter carrying the unprocessed substrate descends, so that the unprocessed substrate is placed on the substrate stage, and the exchange between the processed substrate and the unprocessed substrate is completed.
【0012】2つの基板リフターは鉛直方向の直線運動
に加えて水平面内での回転運動も行い、互いに衝突する
ことのないよう独立して動作する。The two substrate lifters perform rotational movement in the horizontal plane in addition to linear movement in the vertical direction, and operate independently so as not to collide with each other.
【0013】[0013]
【実施例】次に本発明について図面を参照して説明する
。図1Aは、本発明の一実施例の多室構造型真空処理装
置の平面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings. FIG. 1A is a plan view of a multi-chamber vacuum processing apparatus according to an embodiment of the present invention.
【0014】図において、本発明装置は、中央に位置す
る搬送室1の周囲に、基板が収納された基板収納カセッ
ト2を大気状態において出し入れするためのロードロッ
ク室3と、4つの真空処理室4a,真空処理室4b,真
空処理室4c,真空処理室4dとが配設された構造とな
っている。また、搬送室1と各真空処理室4a,4b,
4c,4d及びロードロック室3との間は、仕切り弁5
a,5b,5c,5d,5eにより仕切られており、各
々独立した真空ポンプにより排気される。In the figure, the apparatus of the present invention has a load lock chamber 3 for loading and unloading substrate storage cassettes 2 containing substrates in atmospheric conditions, and four vacuum processing chambers around a transfer chamber 1 located in the center. 4a, a vacuum processing chamber 4b, a vacuum processing chamber 4c, and a vacuum processing chamber 4d. In addition, the transfer chamber 1 and each vacuum processing chamber 4a, 4b,
4c, 4d and the load lock chamber 3 is provided with a gate valve 5.
a, 5b, 5c, 5d, and 5e, each of which is evacuated by an independent vacuum pump.
【0015】搬送室1の内部には、ロードロック室3及
び各真空処理室4a,4b,4c,4dに対して基板6
を一枚ずつ送受するための基板ハンドリングアームが備
えられており、本基板ハンドリングアーム7は点0を中
心とする回転運動並びに伸縮運動を行う。Inside the transfer chamber 1, there are substrates 6 for the load lock chamber 3 and each vacuum processing chamber 4a, 4b, 4c, 4d.
The substrate handling arm 7 is provided with a substrate handling arm for transferring and receiving one sheet at a time, and the substrate handling arm 7 performs rotational movement around point 0 as well as telescopic movement.
【0016】各真空処理室4a,4b,4c,4d及び
ロードロック室3の内部には、基板を載せるための基板
ステージ8a,8b,8c,8d,8eがあり、各基板
ステージ8a,8b,8c,8d,8eにはそれぞれ鉛
直方向への直線運動を行う第1の基板リフター9a,9
b,9c,9d,9eと第2の基板リフター10a,1
0b,10c,10d,10eとが内蔵されている。Inside each of the vacuum processing chambers 4a, 4b, 4c, and 4d and the load lock chamber 3, there are substrate stages 8a, 8b, 8c, 8d, and 8e on which substrates are placed. 8c, 8d, and 8e are first substrate lifters 9a and 9 that move linearly in the vertical direction, respectively.
b, 9c, 9d, 9e and second substrate lifter 10a, 1
0b, 10c, 10d, and 10e are built-in.
【0017】また、図1B(a)に示すように基板ハン
ドリングアーム7は同時に2枚の基板が載せられるよう
2つの基板受け、上部基板受け11aと下部基板受け1
1bを備えている。As shown in FIG. 1B(a), the substrate handling arm 7 has two substrate holders, an upper substrate holder 11a and a lower substrate holder 1, so that two substrates can be placed at the same time.
1b.
【0018】図1B(b)は真空処理室4aの平面図、
図1B(c),図1C(d)は各々基板処理室4aを搬
送室1側と搬送室1と直角な方向からみた概略の側面図
である。図示したように第1,第2の基板リフター9a
,10aは共にL型のシャフト9a−1,10a−1と
、基板を裏面より支えるための円形のプレート9a−2
,10a−2とより構成されており、鉛直方向への直線
運動に加えて直線運動軸を中心とした水平面内の回転運
動も行う。図1(e)に示すように第1,第2の基板リ
フター9a,10aは共にI,II,III,IV,V
の5ケ所の高さで停止するよう設定されており、また基
板ステージ8aには、高さIの状態における第1,第2
の基板リフター9a,10aの円形のプレート9a−2
,10a−2を収納するための3つの凹部12a−1,
12a−2,12a−3が設けられている。高さIの状
態では必ず一方の基板リフターが中央の凹部12a−2
に収納されるよう決められている。すなわち、円形プレ
ート9a−2が凹部12a−1に、円形プレート10a
−2が凹部12a−2に収納されているか、あるいは円
形プレート9a−2が凹部12a−2に円形プレート1
0a−2が凹部12a−3に収納されているかのどちら
かである。高さI以外の状態、すなわち高さII,II
I,IV,Vの状態では第1,第2の基板リフター9a
,10aの円形プレート9a−2,10a−2は共に基
板ステージの中心の鉛直線上に位置し、基板を裏面より
支えることが可能となっている。FIG. 1B(b) is a plan view of the vacuum processing chamber 4a;
FIGS. 1B(c) and 1C(d) are schematic side views of the substrate processing chamber 4a viewed from the transfer chamber 1 side and from a direction perpendicular to the transfer chamber 1, respectively. As shown in the figure, the first and second substrate lifters 9a
, 10a are L-shaped shafts 9a-1, 10a-1, and a circular plate 9a-2 for supporting the board from the back side.
, 10a-2, and in addition to linear movement in the vertical direction, it also performs rotational movement in a horizontal plane around the linear movement axis. As shown in FIG. 1(e), both the first and second substrate lifters 9a and 10a are I, II, III, IV, and V.
The substrate stage 8a is set to stop at five heights, and the substrate stage 8a is set to stop at five heights.
Circular plate 9a-2 of substrate lifter 9a, 10a of
, 10a-2, three recesses 12a-1,
12a-2 and 12a-3 are provided. In the state of height I, one of the board lifters is always attached to the central recess 12a-2.
It is decided that it will be stored in That is, the circular plate 9a-2 is placed in the recess 12a-1, and the circular plate 10a is placed in the recess 12a-1.
-2 is housed in the recess 12a-2, or the circular plate 9a-2 is accommodated in the recess 12a-2.
Either 0a-2 is accommodated in the recess 12a-3. States other than height I, i.e. height II, II
In the I, IV, and V states, the first and second substrate lifters 9a
, 10a are both located on the vertical line at the center of the substrate stage, making it possible to support the substrate from the back side.
【0019】真空処理室での処理終了後の処理済み基板
と処理済み基板の入れ替え動作をフローチャートで示し
たものが図2A,図2Bである。図2Aは処理前基板が
基板ハンドリングアーム7の上部基板受け11aに載せ
られている場合であり、図2Bは処理前基板が下部基板
受け11bに載せられている場合である。このように、
基板ハンドリングアーム7が各真空処理室4a,4b,
4c,4d及びロードロック室3に対して基板の入れ替
え動作を行うたびに、基板は上部基板受け11aと下部
基板受け11bに交互に載せられていく。図示されてい
ないが、ロードロック室3には、基板収納カセット2と
基板ステージ8eとの間で、基板の受け渡しを行う搬送
機構が備えられている。このようにして、基板搬送が行
われていくため、真空処理室4a→4b→4c→4dの
順序で処理を行った場合の各室における基板搬送状態遷
移は表1のようになる。FIGS. 2A and 2B are flowcharts showing the operation of exchanging the processed substrates with the processed substrates after the processing in the vacuum processing chamber is completed. FIG. 2A shows the case where the unprocessed substrate is placed on the upper substrate holder 11a of the substrate handling arm 7, and FIG. 2B shows the case where the unprocessed substrate is placed on the lower substrate holder 11b. in this way,
The substrate handling arm 7 is connected to each vacuum processing chamber 4a, 4b,
Each time a substrate exchange operation is performed for 4c, 4d and the load lock chamber 3, the substrates are alternately placed on the upper substrate receiver 11a and the lower substrate receiver 11b. Although not shown, the load lock chamber 3 is equipped with a transport mechanism that transfers substrates between the substrate storage cassette 2 and the substrate stage 8e. Since the substrate is transferred in this manner, the transition of the substrate transfer state in each chamber is as shown in Table 1 when processing is performed in the order of vacuum processing chambers 4a→4b→4c→4d.
【0020】[0020]
【表1】[Table 1]
【0021】[0021]
【発明の効果】以上説明したように本発明の多室構造型
真空処理装置は、搬送室の基板ハンドリングアームに2
つの基板受けを、また各真空処理室内に各々2つの基板
リフターを設け、真空処理室において処理前基板と処理
済み基板とを一度に基板ハンドリングアームに対して受
け渡しするシーケンスにしたので、基板ハンドリングア
ームは伸び及び縮みのいずれの動作の場合も基板を載せ
ており、効率良く搬送を行うことができる。Effects of the Invention As explained above, the multi-chamber structured vacuum processing apparatus of the present invention has two substrate handling arms in the transfer chamber.
In addition, two substrate lifters were installed in each vacuum processing chamber, and the sequence was such that unprocessed substrates and processed substrates were transferred to and from the substrate handling arm at the same time in the vacuum processing chamber. The substrate is placed on it during both expansion and contraction operations, and can be efficiently transported.
【0022】表1と表2の本発明と、従来の多室構造型
真空処理装置の各室の基板搬送状態遷移において、ロー
ドロック室に処理完了基板が戻ってきてから、次の処理
完了基板が戻ってくるまでを1サイクルとし、この1サ
イクル中での基板ハンドリングアームの動作回数を比較
すると、本発明の多室構造型真空処理装置:回転=5,
伸び+縮み=6従来の多室構造型真空処理装置:回転=
15,伸び+縮み=10となり、回転が1/3,伸び+
縮みが3/5と大幅に動作が低減されているのがわかる
。図1Aに示した多室構造型の真空処理装置において真
空処理室4a→4b→4c→4dの順序で各室60秒間
基板処理を行った場合のスループットは、約35枚/H
rとなり、従来の約20枚/Hrに比べて1.75倍向
上している。このように本発明の多室構造型真空処理装
置は従来大きな欠点とされていた処理能力の低さを大き
く改善することができる。In the substrate transfer state transition of each chamber of the present invention and the conventional multi-chamber structured vacuum processing apparatus shown in Tables 1 and 2, after the processed substrate returns to the load lock chamber, the next processed substrate is transferred. When the number of operations of the substrate handling arm during this one cycle is compared, the number of movements of the substrate handling arm in one cycle is as follows:
Elongation + contraction = 6 Conventional multi-chamber structured vacuum processing equipment: Rotation =
15, elongation + contraction = 10, rotation is 1/3, elongation +
It can be seen that the movement is significantly reduced, with the shrinkage being 3/5. In the multi-chamber vacuum processing apparatus shown in FIG. 1A, the throughput is approximately 35 wafers/hour when substrate processing is performed for 60 seconds in each chamber in the order of vacuum processing chambers 4a → 4b → 4c → 4d.
r, which is an improvement of 1.75 times compared to the conventional rate of about 20 sheets/hr. As described above, the multi-chamber structured vacuum processing apparatus of the present invention can greatly improve the low processing capacity, which has traditionally been a major drawback.
【図1A】本発明の実施例1に係る多室構造型真空処理
装置を示す平面図である。FIG. 1A is a plan view showing a multi-chamber vacuum processing apparatus according to Example 1 of the present invention.
【図1B】(a)は搬送室内蔵の基板ハンドリングアー
ムを示す拡大図、(b)は真空処理室の平面図、(c)
は各々真空処理室を搬送室側と搬送室に直角な方向から
見た概略の側面図である。[Fig. 1B] (a) is an enlarged view showing the substrate handling arm built into the transfer chamber, (b) is a plan view of the vacuum processing chamber, (c)
2A and 2B are schematic side views of the vacuum processing chamber viewed from the transfer chamber side and from a direction perpendicular to the transfer chamber, respectively.
【図1C】(d)は各々真空処理室を搬送室側と搬送室
に直角な方向から見た概略の側面図、(e)は真空処理
室内の基板リフターの高さを示すための説明図である。[Fig. 1C] (d) is a schematic side view of the vacuum processing chamber viewed from the transfer chamber side and from a direction perpendicular to the transfer chamber, and (e) is an explanatory diagram showing the height of the substrate lifter in the vacuum processing chamber. It is.
【図2A】真空処理室での処理終了後の処理済み基板と
処理前基板の入れ替え動作のフローチャートである。FIG. 2A is a flowchart of an operation for exchanging a processed substrate and an unprocessed substrate after processing in a vacuum processing chamber.
【図2B】真空処理室での処理終了後の処理済み基板と
処理前基板の入れ替え動作のフローチャートである。FIG. 2B is a flowchart of an operation for exchanging a processed substrate and an unprocessed substrate after processing in a vacuum processing chamber.
【図3A】従来の多室構造型真空処理装置の平面図であ
る。FIG. 3A is a plan view of a conventional multi-chamber vacuum processing apparatus.
【図3B】(a)は真空処理室の平面図、(b)は真空
処理室を搬送室側より見た側面図である。FIG. 3B is a plan view of the vacuum processing chamber, and FIG. 3B is a side view of the vacuum processing chamber viewed from the transfer chamber side.
【図4】(a),(b)は各々処理済み基板を真空処理
室から搬送室へ戻す動作、及び処理前基板を搬送室から
真空処理室へ送り込む動作のフローチャートである。FIGS. 4A and 4B are flowcharts of the operation of returning a processed substrate from the vacuum processing chamber to the transfer chamber, and the operation of sending an unprocessed substrate from the transfer chamber to the vacuum processing chamber, respectively.
1 搬送室
2 基板収納カセット
3 ロードロック室
4a,4b,4c,4d 真空処理室5a,5b,5
c,5d,5e 仕切り弁6 基板
7 基板ハンドリングアーム
8a,8b,8c,8d,8e 基板ステージ9a,
9b,9c,9d,9e 第1の基板リフター9a−
1 第1の基板リフターのL型シャフト9a−2
第1の基板リフターの円形プレート10a,10b,1
0c,10d,10e 第2の基板リフター
10a−1 第2の基板リフターのL型シャフト10
a−2 第2の基板リフターの円形プレート11a
上部基板受け
11b 下部基板受け
12a,12b,12c 凹部1 Transfer chamber 2 Substrate storage cassette 3 Load lock chambers 4a, 4b, 4c, 4d Vacuum processing chambers 5a, 5b, 5
c, 5d, 5e Gate valve 6 Substrate 7 Substrate handling arm 8a, 8b, 8c, 8d, 8e Substrate stage 9a,
9b, 9c, 9d, 9e First substrate lifter 9a-
1 L-shaped shaft 9a-2 of the first board lifter
Circular plates 10a, 10b, 1 of the first substrate lifter
0c, 10d, 10e Second substrate lifter 10a-1 L-shaped shaft 10 of second substrate lifter
a-2 Circular plate 11a of second substrate lifter
Upper board receiver 11b Lower board receiver 12a, 12b, 12c Recessed part
Claims (1)
搬送室の周囲に複数個配設させた多室構造型真空処理装
置であって、前記搬送室と各真空処理室との間で基板の
搬出入を行うための基板ハンドリングアームに2個の基
板受けを備え、各真空処理室内部に基板を裏面より支持
して鉛直方向に移動させるための基板リフター機構を2
組備えたことを特徴とする多室構造型真空処理装置。1. A multi-chamber structured vacuum processing apparatus in which a plurality of vacuum processing chambers for processing substrates one by one are arranged around a transfer chamber, wherein a plurality of vacuum processing chambers are provided between the transfer chamber and each vacuum processing chamber. The substrate handling arm for loading and unloading substrates is equipped with two substrate holders, and two substrate lift mechanisms are installed inside each vacuum processing chamber to support the substrate from the back side and move it vertically.
A multi-chamber structured vacuum processing device characterized by the following:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9142891A JPH04304372A (en) | 1991-03-29 | 1991-03-29 | Multi-chamber vacuum treating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9142891A JPH04304372A (en) | 1991-03-29 | 1991-03-29 | Multi-chamber vacuum treating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04304372A true JPH04304372A (en) | 1992-10-27 |
Family
ID=14026107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9142891A Pending JPH04304372A (en) | 1991-03-29 | 1991-03-29 | Multi-chamber vacuum treating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04304372A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06336308A (en) * | 1993-05-27 | 1994-12-06 | Dainippon Screen Mfg Co Ltd | Method and device for changing substrate |
EP0793262A2 (en) * | 1996-02-28 | 1997-09-03 | Applied Materials, Inc. | Multiple independent robot assembly and apparatus for processing and transferring semiconductor wafers |
KR20020071393A (en) * | 2001-03-06 | 2002-09-12 | 주식회사 아이피에스 | Automatic continue wafer processing system and method for using the same |
KR100772773B1 (en) * | 2002-10-16 | 2007-11-01 | 마츠시타 덴끼 산교 가부시키가이샤 | Washing and drying machine |
-
1991
- 1991-03-29 JP JP9142891A patent/JPH04304372A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06336308A (en) * | 1993-05-27 | 1994-12-06 | Dainippon Screen Mfg Co Ltd | Method and device for changing substrate |
EP0793262A2 (en) * | 1996-02-28 | 1997-09-03 | Applied Materials, Inc. | Multiple independent robot assembly and apparatus for processing and transferring semiconductor wafers |
EP0793262A3 (en) * | 1996-02-28 | 2001-08-16 | Applied Materials, Inc. | Multiple independent robot assembly and apparatus for processing and transferring semiconductor wafers |
KR20020071393A (en) * | 2001-03-06 | 2002-09-12 | 주식회사 아이피에스 | Automatic continue wafer processing system and method for using the same |
KR100772773B1 (en) * | 2002-10-16 | 2007-11-01 | 마츠시타 덴끼 산교 가부시키가이샤 | Washing and drying machine |
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