JPH04196708A - Frequency adjustment device and method for piezoelectric element - Google Patents
Frequency adjustment device and method for piezoelectric elementInfo
- Publication number
- JPH04196708A JPH04196708A JP2322373A JP32237390A JPH04196708A JP H04196708 A JPH04196708 A JP H04196708A JP 2322373 A JP2322373 A JP 2322373A JP 32237390 A JP32237390 A JP 32237390A JP H04196708 A JPH04196708 A JP H04196708A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- piezoelectric element
- ion
- ion gun
- frequency adjustment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 9
- 239000002245 particle Substances 0.000 claims abstract description 13
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 10
- 230000007935 neutral effect Effects 0.000 claims description 10
- 238000010897 surface acoustic wave method Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 34
- 238000005530 etching Methods 0.000 abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 9
- 230000005684 electric field Effects 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 235000012489 doughnuts Nutrition 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〈発明の目的〉
「産業上の利用分野」
本発明は、周波数を測定しながらプラズマイオンエツチ
ングにより圧電素子の水晶振動子や弾性表面波素子の周
波数調整を行う周波数調整装置と周波数調整方法に関す
る。[Detailed description of the invention] <Object of the invention>"Industrial application field" The present invention is a frequency adjustment method for adjusting the frequency of a crystal resonator of a piezoelectric element or a surface acoustic wave element by plasma ion etching while measuring the frequency. Concerning devices and frequency adjustment methods.
「従来の技術」
従来より圧電素子の周波数調整方法としては、励振電極
の上にさらに金属を蒸着して質量を増やして周波数を下
げて調整する方法がとられていた。"Prior Art" Conventionally, the frequency of a piezoelectric element has been adjusted by depositing metal on top of the excitation electrode to increase the mass and lower the frequency.
また最近ではイオンビームにより電極にイオンをぶつけ
ることによりエツチングし、周波数を上げる方法もとら
れている。第３図は、従来のイオンエツチングの原理説
明図である。イオンガン２０から発生するイオン粒子２
１を圧電素子２２に当てることにより電極の金属をエツ
チングして周波数を上げている。Recently, a method has also been adopted in which etching is performed by bombarding the electrode with ions using an ion beam to increase the frequency. FIG. 3 is a diagram explaining the principle of conventional ion etching. Ion particles 2 generated from the ion gun 20
1 to the piezoelectric element 22, the metal of the electrode is etched and the frequency is increased.
「発明が解決しようとする課題」
しかし従来のイオンビームによるエツチングでは圧電素
子に飛んでくるイオン粒子がプラスやマイナスに帯電し
ており、圧電素子に帯電してしまい、周波数を測定しな
がらエツチングすると発振回路を破壊したり、正しく周
波数を測定出来ないため、測定とエツチングの工程を分
けてこれを繰り返して行う必要がある。``Problem to be solved by the invention'' However, in conventional etching using an ion beam, the ion particles that fly toward the piezoelectric element are charged positively or negatively, and the piezoelectric element is charged. To avoid destroying the oscillation circuit or not being able to measure the frequency correctly, it is necessary to separate the measurement and etching processes and repeat them.
「発明の目的」
本発明の目的は、前述した欠点を除去し、圧電素子の周
波数を測定しながらイオンビームによるエツチングによ
り周波数調整が出来る周波数調整装置と周波数調整方法
を提供することにある。OBJECTS OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks and to provide a frequency adjustment device and a frequency adjustment method capable of adjusting the frequency by etching with an ion beam while measuring the frequency of a piezoelectric element.
〈本発明の構成〉
「課題を解決する手段」
そこで本発明では、イオンがンから発生するイオンのう
ち中性粒子のみを圧電素子にぶつけてエツチングを行っ
ている。中性粒子のみを得るためにイオンガンと圧電素
子との間に直流電圧を印加した電極を配置して解決して
いる。<Structure of the present invention> ``Means for solving the problem'' Therefore, in the present invention, etching is performed by bombarding a piezoelectric element with only neutral particles among ions generated from ions. In order to obtain only neutral particles, the problem was solved by placing an electrode to which a DC voltage was applied between the ion gun and the piezoelectric element.
「作用」
本発明では、イオンガンと圧電素子との間に直流電圧の
印加した電極があるため、プラスかマイナスに帯電した
イオンは電極によりその経路が曲がるため直進するのは
中性粒子のみであり、従来のように圧電素子に帯電する
ことはなくなり、エツチングしながら周波数の測定が出
来るようになった。"Operation" In the present invention, since there is an electrode to which a DC voltage is applied between the ion gun and the piezoelectric element, the path of positively or negatively charged ions is bent by the electrode, so only neutral particles travel straight. , the piezoelectric element is no longer charged as in the past, and it is now possible to measure the frequency while etching.
「実施例」
第１図は、本発明の周波数調整装置の原理図である。イ
オンが７１は、本発明では中性粒子を発生し易いサドル
・フィールド型イオンガンが使用されている。Embodiment FIG. 1 is a diagram showing the principle of the frequency adjustment device of the present invention. In the present invention, the ion gun 71 uses a saddle field type ion gun that easily generates neutral particles.
従来使用されていたイオンガンは、ＥＣＲ（電子サイク
ロトロン共振型イオンガン）であり、マイクロ波で励振
されたイオンがイオンガン前面に配置されたグリッドに
直流電圧を印加されているため、加速され放出される。The conventionally used ion gun is an ECR (electron cyclotron resonance ion gun), in which ions excited by microwaves are accelerated and emitted because a DC voltage is applied to a grid placed in front of the ion gun.
ＥＣＲタイプでは中性粒子は少なく、プラスやマイナス
に帯電したイオンが多（放出される。In the ECR type, there are few neutral particles, and many positively and negatively charged ions are emitted.
しかし本発明で使用されるイオンガン１は、第２図に示
す通り、ドーナツ状の陽極２と外周の陰極３とからなり
、陰極３には２個の放射孔４゜４′が開いている。内部
にアルゴン等のガスを導入しながら減圧し、ドーナツ状
の陽極２と外周の陰極３との間に直流電圧を印加するす
るとドーナツ状電極の中心でイオンの振動が始まりプラ
ズマを発生させる。電子の放出によって陰極３に向かっ
て運動し、放出孔４．４′から飛び出していく。However, as shown in FIG. 2, the ion gun 1 used in the present invention consists of a doughnut-shaped anode 2 and a cathode 3 on the outer periphery, and the cathode 3 has two radiation holes 4° 4'. When the pressure is reduced while introducing a gas such as argon into the interior, and a DC voltage is applied between the donut-shaped anode 2 and the outer cathode 3, ions begin to vibrate at the center of the donut-shaped electrode, generating plasma. Due to the emission of electrons, they move toward the cathode 3 and fly out from the emission hole 4.4'.
この時マイナスイオンも同時に飛び出してプラスイオン
と中和して中性な粒子を発生させる。At this time, negative ions also fly out and neutralize with positive ions to generate neutral particles.
イオンビームのビーム方向に周波数調整する水晶振動子
５が配置されている。イオンガン１と水晶振動子５はチ
ャンバーの中に入れられ、アルゴン、酸素、フロン（Ｃ
Ｆ、）等のガスが入れられ１０１〜１０−３ｐ ａ （
パスカル）程度の真空度に維持されている。A crystal resonator 5 for frequency adjustment is arranged in the beam direction of the ion beam. The ion gun 1 and the crystal oscillator 5 are placed in a chamber, and are filled with argon, oxygen, and fluorocarbons (C
A gas such as
It is maintained at a degree of vacuum (Pascal).
イオンが７１と水晶振動子５との間には対向し直流電圧
がかかった電極６が配置され、この電極６の間をイオン
が通過するとプラスやマイナスに帯電したイオンは電極
６の電界によって進路が曲げられ、真っ直ぐ進むのは中
性粒子だけとなる。Between the ion 71 and the crystal oscillator 5, an opposing electrode 6 to which a DC voltage is applied is disposed, and when the ion passes between the electrodes 6, the positively or negatively charged ions are guided by the electric field of the electrode 6. is bent, and only neutral particles travel straight.
本発明で使用されるイオンガン１では中性粒子が多く発
生しているが、それでも帯電したイオンが含まれている
ため、それらイオンを電極６によって除去される。Although the ion gun 1 used in the present invention generates many neutral particles, it still contains charged ions, so these ions are removed by the electrode 6.
本発明によってイオンビームから発生するイオン流のう
ち中性粒子のみを水晶振動子にぶつけることが出来、水
晶振動子が帯電しないため、周波数を測定しながらエツ
チングが出来る。このため微妙な周波数調整が出来るよ
うになり、より精度の高い圧電素子が提供出来るように
なった。According to the present invention, only neutral particles of the ion flow generated from the ion beam can be bombarded with the crystal resonator, and since the crystal resonator is not charged, etching can be performed while measuring the frequency. This has made it possible to make delicate frequency adjustments, making it possible to provide piezoelectric elements with higher precision.
なお本実施例では、圧電素子として水晶振動子を例に挙
げたが、他の圧電体であるタンタル酸リチウムや圧電セ
ラミックであってもよい。In this embodiment, a crystal resonator is used as an example of the piezoelectric element, but other piezoelectric materials such as lithium tantalate or piezoelectric ceramic may be used.
また圧電素子として弾性表面波素子の周波数調整にも盲
動である。Furthermore, as a piezoelectric element, the surface acoustic wave element is also blind in frequency adjustment.
く本発明の効果〉
本発明による周波数調整方法および周波数調整装置によ
って、周波数を測定しながらエツチングによる周波数調
整が出来、従来に比べ調整工数が大幅に軽減出来、しか
もリアルタイムに周波数が測定されているため高精度な
周波数調整が可能となった０Effects of the present invention> The frequency adjustment method and frequency adjustment device according to the present invention enable frequency adjustment by etching while measuring the frequency, greatly reducing the number of adjustment steps compared to the conventional method, and moreover, the frequency is measured in real time. Therefore, highly accurate frequency adjustment is possible.
第１図は本発明の原理を示す説明図、第２図は本発明に
使用されるイオンビームの構造説明図、第３図は従来の
装置の原理説明図である。
１・・・・・・・・・イオンガン、
５・・・・・・・・・圧電素子、
６・・・・・・・・・電極FIG. 1 is an explanatory diagram showing the principle of the present invention, FIG. 2 is an explanatory diagram of the structure of an ion beam used in the present invention, and FIG. 3 is an explanatory diagram of the principle of a conventional apparatus. 1... Ion gun, 5... Piezoelectric element, 6... Electrode
Claims (4)
てて周波数を調整する圧電素子の周波数調整装置におい
て、イオンガンと周波数調整する圧電素子との間に直流
をかける電極を配置したことを特徴とする圧電素子の周
波数調整装置。(1) A piezoelectric element frequency adjustment device that adjusts the frequency by applying an ion beam to the piezoelectric element whose frequency is to be adjusted, characterized in that an electrode that applies a direct current is arranged between the ion gun and the piezoelectric element whose frequency is to be adjusted. A frequency adjustment device for piezoelectric elements.
を印加した電極間に通すことにより中性粒子のみを圧電
素子に当てて周波数を調整する圧電素子の周波数調整方
法。(2) A method for adjusting the frequency of a piezoelectric element, in which the ion beam generated from an ion gun is passed between electrodes to which a DC voltage is applied, so that only neutral particles are applied to the piezoelectric element to adjust the frequency.
であることを特徴とする特許請求の範囲第１項記載の圧
電素子の周波数調整装置。(3) The frequency adjustment device for a piezoelectric element according to claim 1, wherein the ion gun is a saddle field type ion gun.
する特許請求の範囲第２項記載の圧電素子の周波数調整
方法。(4) The method for adjusting the frequency of a piezoelectric element according to claim 2, wherein the piezoelectric element is a surface acoustic wave element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2322373A JPH07118624B2 (en) | 1990-11-28 | 1990-11-28 | Piezoelectric element frequency adjusting device and frequency adjusting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2322373A JPH07118624B2 (en) | 1990-11-28 | 1990-11-28 | Piezoelectric element frequency adjusting device and frequency adjusting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04196708A true JPH04196708A (en) | 1992-07-16 |
| JPH07118624B2 JPH07118624B2 (en) | 1995-12-18 |
Family
ID=18142923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2322373A Expired - Lifetime JPH07118624B2 (en) | 1990-11-28 | 1990-11-28 | Piezoelectric element frequency adjusting device and frequency adjusting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07118624B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2699765A1 (en) * | 1992-12-22 | 1994-06-24 | Cepe | Method of frequency adjustment of a piezoelectric device and equipment for carrying out the method |
| JPH0730355A (en) * | 1993-07-12 | 1995-01-31 | Seiko Epson Corp | Frequency adjusting method and device for piezoelectric element |
| JPH08154028A (en) * | 1994-09-30 | 1996-06-11 | Tokki Kk | Frequency adjusting device |
| JPH10126186A (en) * | 1996-10-16 | 1998-05-15 | Matsushita Electric Ind Co Ltd | Frequency adjustment device for crystal vibrator |
| JP2001332948A (en) * | 1993-05-27 | 2001-11-30 | Seiko Epson Corp | Frequency adjustment working device for piezoelectric element |
| JP2002016465A (en) * | 1993-05-27 | 2002-01-18 | Seiko Epson Corp | Frequency control working device for piezoelectric element |
| US6707228B2 (en) | 2000-03-31 | 2004-03-16 | Murata Manufacturing Co., Ltd. | Method for adjusting frequency of electronic component |
| JP2013198080A (en) * | 2012-03-22 | 2013-09-30 | Showa Shinku:Kk | Frequency measuring method and frequency adjusting method of piezoelectric element, and manufacturing method of piezoelectric element |
| CN107430244A (en) * | 2015-03-13 | 2017-12-01 | 狄德罗-巴黎第七大学 | Use the method for one or more resonators |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63151103A (en) * | 1986-12-15 | 1988-06-23 | Nippon Dempa Kogyo Co Ltd | Method and device for adjusting frequency of piezoelectric vibrator |
| JPS63240112A (en) * | 1987-03-27 | 1988-10-05 | Tokyo Butsuri Gakuen | Electrode forming device for crystal resonator |
| JPH02233009A (en) * | 1989-03-07 | 1990-09-14 | Miyota Seimitsu Kk | Method and apparatus for adjusting frequency of tuning fork type piezoelectric vibrator |
-
1990
- 1990-11-28 JP JP2322373A patent/JPH07118624B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63151103A (en) * | 1986-12-15 | 1988-06-23 | Nippon Dempa Kogyo Co Ltd | Method and device for adjusting frequency of piezoelectric vibrator |
| JPS63240112A (en) * | 1987-03-27 | 1988-10-05 | Tokyo Butsuri Gakuen | Electrode forming device for crystal resonator |
| JPH02233009A (en) * | 1989-03-07 | 1990-09-14 | Miyota Seimitsu Kk | Method and apparatus for adjusting frequency of tuning fork type piezoelectric vibrator |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2699765A1 (en) * | 1992-12-22 | 1994-06-24 | Cepe | Method of frequency adjustment of a piezoelectric device and equipment for carrying out the method |
| EP0604280A1 (en) * | 1992-12-22 | 1994-06-29 | Compagnie D'electronique Et De Piezo-Electricite - C.E.P.E. | Frequency fine-tuning method for a piezo-electric device and apparatus for carrying out such method |
| US5407525A (en) * | 1992-12-22 | 1995-04-18 | Compagnie D'electronique Et De Piezo-Electricite C.E.P.E. | Method of frequency tuning a piezoelectric device and apparatus for the implementation of the method |
| JP2001332948A (en) * | 1993-05-27 | 2001-11-30 | Seiko Epson Corp | Frequency adjustment working device for piezoelectric element |
| JP2002016465A (en) * | 1993-05-27 | 2002-01-18 | Seiko Epson Corp | Frequency control working device for piezoelectric element |
| JPH0730355A (en) * | 1993-07-12 | 1995-01-31 | Seiko Epson Corp | Frequency adjusting method and device for piezoelectric element |
| JPH08154028A (en) * | 1994-09-30 | 1996-06-11 | Tokki Kk | Frequency adjusting device |
| JPH10126186A (en) * | 1996-10-16 | 1998-05-15 | Matsushita Electric Ind Co Ltd | Frequency adjustment device for crystal vibrator |
| US6707228B2 (en) | 2000-03-31 | 2004-03-16 | Murata Manufacturing Co., Ltd. | Method for adjusting frequency of electronic component |
| JP2013198080A (en) * | 2012-03-22 | 2013-09-30 | Showa Shinku:Kk | Frequency measuring method and frequency adjusting method of piezoelectric element, and manufacturing method of piezoelectric element |
| CN107430244A (en) * | 2015-03-13 | 2017-12-01 | 狄德罗-巴黎第七大学 | Use the method for one or more resonators |
| CN107430244B (en) * | 2015-03-13 | 2019-10-22 | 狄德罗-巴黎第七大学 | Use the method for one or more resonators |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07118624B2 (en) | 1995-12-18 |
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