JPH04145619A - Vapor growth device - Google Patents

Abstract

PURPOSE:To prevent contamination of a piping by making an evacuation switching valve adjacent to a raw gas supply valve, by piping for the evacuation switching valve and by evacuating a piping alone between a stopping valve and the raw gas supply valve. CONSTITUTION:When a raw material containing container 1 is exchanged, a stopping valve 2 is closed, an evacuation switching valve 5 is opened and other valves such as an inject valve 8 and a vent valve 9 are closed. Remaining raw gas in a raw gas supply piping 3, especially between a raw gas supply valve 4 and the stopping valve 2 is removed by a vacuum pump 12 and air which entered when the container 1 is removed is eliminated. Returning from a vacuum state to a normal pressure is carried out by closing an evacuation switching valve 5 and by opening a purge valve 14 to supply inert gas. Contamination of a piping used during vapor growth is prevented in this way, thereby enabling good vapor growth.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vapor phase growth apparatus, and particularly to a vapor phase growth apparatus for growing a crystalline thin film of compound semiconductor or the like on a substrate.

[Conventional technology]

FIG. 3 is a system diagram showing an example of a conventional vapor phase growth apparatus.

The vapor phase growth apparatus shown in FIG.
an injection pipe 16 connected to the raw material gas supply pipe 3 via an injection valve 8 and supplying the raw material gas into the reaction chamber 10;
An exhaust pipe 11 connected to the reaction chamber 10 and a vent pipe 17 that is connected to the raw material gas supply pipe 3 via a vent valve 9 and exhausts the raw material gas without supplying it to the reaction chamber 10.
and the mass flow controller 13 that controls the flow rate of the carrier gas, and the source gas supply piping 3 between the stop valve 2 and the other stop valve 2, the injection valve 8, and the vent valve 9. A pair of raw material gas supply valves 4 and a bypass valve provided between the pair of raw material gas supply valves 4 are provided.

The flow rate of the carrier gas is controlled by the mass flow controller 13 and it is supplied to the raw material storage container 1, and the raw material in a liquid or solid state is vaporized by bubbling, and the raw material gas supply pipe 3
is supplied into the reaction chamber 10 through the injection pipe 16, and a crystal thin film of compound semiconductor or the like is grown on the substrate in the reaction chamber 10.

The raw material storage container 1 is connected between the raw material gas supply valve 4 and the stop valve 2 by a joint (not shown), and is removed from this joint when replacing the container. Before and after this exchange, the raw material gas supply pipe 3 is open to the atmosphere.
It is necessary to remove the source gas from inside the source gas supply pipe 3.

For this reason, be sure to close the stop valve 2, open the raw material gas supply valve 4 and the bypass valve 6, and then open the vent pipe 17.
A method of evacuation using a vacuum pump 12 is used.

[Problem to be solved by the invention]

In the conventional vapor phase growth apparatus described above, when replacing the raw material storage container 1, the source gas supply pipe 3 is evacuated through the pipe used during vapor phase growth, so the inside of the pipe may be contaminated with air, etc. There was a drawback that it could be stored away.

[Means to solve the problem]

The vapor phase growth apparatus of the present invention supplies raw material gas into a reaction chamber from a raw material storage container connected via a stop valve and a joint through a raw material gas supply pipe and an injection main pipe, and deposits crystals on a substrate in the reaction chamber. In a vapor phase growth apparatus that performs growth, a vacuum-only switching valve connected adjacent to a source gas supply valve corresponding to the raw material storage container, and a purge-only switching valve connected at a position opposite to the vacuum-only switching valve. It is configured to include a valve, a vacuum-only piping connected to the vacuum-only switching valve, a purge-only piping connected to the purge-only valve, and a vacuum pump connected to the end of the vacuum-only piping. .

The vapor phase growth apparatus of the present invention supplies raw material gas into a reaction chamber from a raw material storage container connected via a stop valve and a joint through a raw material gas supply pipe and an injection main pipe, and deposits crystals on a substrate in the reaction chamber. In a vapor phase growth apparatus that performs growth, a vacuum-only switching valve installed at a position opposite to a raw material supply valve connected adjacent to the raw material gas supply pipe corresponding to the raw material storage container; It is configured to include a dedicated vacuum piping connected to the switching valve, and a vacuum pump connected to the end of the vacuum dedicated piping.

〔Example〕

Next, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a system diagram showing one embodiment of the present invention.

A switching valve 5 exclusively for evacuation is provided between the source gas supply valve 4 and the stop valve 2 and adjacent to the source gas supply valve 4, and a purge only valve 14 is connected at a position opposite to the switching valve 5 only for evacuation. ing.

The raw material storage container 1 stores, for example, a group V organic metal raw material, and is connected to a raw material gas supply pipe 3 via a stop valve 2 . A bypass valve 6 is connected adjacently between the source gas supply valves 4 .

The raw material gas supply device 3 is connected to an inject pipe 16 and a vent pipe 17 via an inject valve 8 and a vent valve 9.
is connected, and the injection pipe 16 is connected to the reaction chamber 10.
The vent pipe 17 is directly connected to the exhaust pipe 11, and the vacuum pump 12 is connected to the exhaust pipe 11. A vacuum-only switching valve 5 is connected to a vacuum-only pipe 7, and the end of the vacuum-only pipe 7 is connected to a vacuum pump 12. A purge-only pipe 15 is connected to the purge-only valve 14, and an inert gas such as Ar (argon) is supplied thereto.

When replacing the raw material storage container 1, the stop valve 2 is securely closed, the vacuum switching valve 5 is opened, and the valves such as the inject valve 8 and vent pal 19 are closed. The inside of the raw material gas supply pipe 3, especially between the raw material gas supply valve 4 and the stop valve 2, is evacuated by the vacuum pump 12 to remove residual raw material gas, and the raw material storage container 1
Remove the air that entered when the was removed. Returning from a vacuum state to normal pressure is performed by closing the vacuum switching valve 5, opening the purge valve 14, and supplying inert gas.

FIG. 2 is a system diagram showing another embodiment of the present invention.

The raw material storage container 1 stores, for example, a group V organic metal raw material, and is connected to a raw material gas supply pipe 3 via a stop valve 2 . A raw material gas supply valve 4 is connected to the raw material gas supply pipe 3 , and a switching valve 5 exclusively for evacuation is connected adjacent to the raw material gas supply pipe 3 at a position opposite to the raw material gas supply valve 4 . A vacuum-only switching valve 5 is connected to a vacuum-only pipe 7, and the end of the vacuum-only pipe 7 is connected to a vacuum pump 12. A bypass valve 6 is connected adjacently between the vacuum switching valves 5. An inject pipe 16 and a vent pipe 17 are connected to the raw material gas supply pipe 3 via an inject valve 8 and a vent valve 9. The inject pipe 16 is connected to the reaction chamber 10, and the vent pipe 17 is directly connected to the exhaust pipe 11. A vacuum pump 12 is connected to the exhaust pipe 11.

When replacing the raw material storage container 1, the stop valve 2 is securely closed, the raw material gas supply valve 4 and the vacuum switching valve 5 are opened, and the valves such as the injection valve 8 and vent pal 19 are closed. The inside of the raw material gas supply pipe 3 is evacuated by the vacuum pump 12 to remove residual raw material gas, and also to remove air that entered when the raw material storage container 1 was removed.

〔Effect of the invention〕

In the vapor phase growth apparatus of the present invention, a switching valve exclusively for vacuuming is adjacent to the source gas supply valve, and a piping exclusively for vacuuming is connected to the switching valve exclusively for vacuuming, so that the source gas can be connected between the stop valve and the source gas supply valve. By evacuating only the gas supply piping, there is an effect that contamination of the piping used during vapor phase growth can be prevented.

[Brief explanation of the drawing]

FIG. 1 is a system diagram showing one embodiment of the present invention, FIG. 2 is a system diagram showing another embodiment of the invention, and FIG. 3 is a system diagram of a conventional vapor phase growth apparatus. 1... Raw material storage container, 2... Stop valve, 3...
... Raw material gas supply piping, 4... Raw material gas supply valve,
5... Vacuum exclusive switching valve, 6... Bypass valve, 7... Vacuum exclusive piping, 8... Inject valve, 9... Vent valve, 10... Reaction chamber,
11... Exhaust piping, 12... Vacuum pump, 13...
-Mass flow controller, 14... Valve for purge, 15... Piping for purge, 16... Inject piping, 17... Vent piping.

Claims (1)

[Claims] 1. A raw material gas is supplied into a reaction chamber from a raw material storage container connected via a stop valve and a joint through a raw material gas supply pipe and an injection main pipe, and crystal growth is performed on a substrate in the reaction chamber. In a vapor phase growth apparatus that performs the above, the vacuum switching valve is connected adjacent to the raw material gas supply valve corresponding to the raw material storage container, and the purge switching valve is connected to a position opposite to the vacuum switching valve. and a vacuum-only piping connected to the vacuum-only switching valve, a purge-only piping connected to the purge-only valve, and a vacuum pump connected to an end of the vacuum-only piping. Vapor phase growth equipment. 2. A vapor phase growth apparatus that supplies raw material gas into a reaction chamber from a raw material storage container connected via a stop valve and a joint through a raw material gas supply pipe and an injection main pipe, and grows crystals on a substrate in the reaction chamber. , a vacuum-only switching valve installed at a position opposite to a raw material supply valve connected adjacent to the raw material gas supply pipe corresponding to the raw material storage container; and a vacuum-only switching valve connected to the vacuum-only switching valve. A vapor phase growth apparatus comprising a dedicated pipe and a vacuum pump connected to an end of the vacuum pipe.