JPH04132133A - Cold electron discharge electrode - Google Patents
Cold electron discharge electrodeInfo
- Publication number
- JPH04132133A JPH04132133A JP2253079A JP25307990A JPH04132133A JP H04132133 A JPH04132133 A JP H04132133A JP 2253079 A JP2253079 A JP 2253079A JP 25307990 A JP25307990 A JP 25307990A JP H04132133 A JPH04132133 A JP H04132133A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- substrate
- electrode
- cold electron
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052721 tungsten Inorganic materials 0.000 abstract description 13
- 239000010937 tungsten Substances 0.000 abstract description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052719 titanium Inorganic materials 0.000 abstract description 11
- 239000010936 titanium Substances 0.000 abstract description 11
- 229920006395 saturated elastomer Polymers 0.000 abstract description 7
- 238000002844 melting Methods 0.000 abstract description 6
- 229910052697 platinum Inorganic materials 0.000 abstract description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract description 5
- 150000001342 alkaline earth metals Chemical class 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000010335 hydrothermal treatment Methods 0.000 abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 5
- 239000011733 molybdenum Substances 0.000 abstract description 5
- 230000008018 melting Effects 0.000 abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 barium or strontium Chemical class 0.000 description 1
- SJPVUFMOBDBTHQ-UHFFFAOYSA-N barium(2+);dioxido(dioxo)tungsten Chemical compound [Ba+2].[O-][W]([O-])(=O)=O SJPVUFMOBDBTHQ-UHFFFAOYSA-N 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、長寿命で動作電圧が低く、さらには放電開
始電圧の低い、良好な冷電子放出特性を示す放電電極に
関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a discharge electrode that has a long life, has a low operating voltage, has a low firing voltage, and exhibits good cold electron emission characteristics.
（従来の技術）
金属の表面に強い電場を加えたとき、その表面から電子
が放出される。この現象はフィールドエミッション（冷
電子放出）と呼ばれている。(Prior Art) When a strong electric field is applied to the surface of a metal, electrons are emitted from the surface. This phenomenon is called field emission (cold electron emission).
このような冷電子放出能を有する材料には、タングステ
ン、ゲルマニウム、シリコン、ガリウム−ひ素、カドミ
ウム−テルル、などがある。Materials having such a cold electron emission ability include tungsten, germanium, silicon, gallium-arsenide, cadmium-tellurium, and the like.
冷電子放出電極を用いたものとしては、走査型電子顕微
鏡、電子線描画装置などがあり、電子源としての利用が
可能である。このうち、冷電子放出電極を用いた走査型
電子顕微鏡は、その電子銃がポイントカソード（冷陰極
）と、アノード（陽極）から構成されている。Examples of devices using cold electron emitting electrodes include scanning electron microscopes and electron beam lithography devices, which can be used as electron sources. Among these, in a scanning electron microscope using a cold electron emission electrode, the electron gun is composed of a point cathode (cold cathode) and an anode (anode).
この冷陰極は、タングステンからなるロッドの先端を尖
鋭状としたものからなる。そして、この陰極と陽極との
間に電界が形成され、陽極にて電子ビームを制御して、
タングステンヘアピン型のフィラメントのような熱電子
放出型の電子銃に比べて高いエミッション強度を得てい
る。This cold cathode consists of a rod made of tungsten with a sharp tip. An electric field is formed between the cathode and the anode, and the anode controls the electron beam.
It has higher emission strength than thermionic emission type electron guns such as tungsten hairpin filament.
（発明が解決しようとする問題点）
しかしながら、この冷陰極を用いた電子銃は冷電子引き
出し電圧が高く（放電開始電圧が高い）、使用条件が限
られることがあった。(Problems to be Solved by the Invention) However, the electron gun using this cold cathode has a high cold electron extraction voltage (high discharge starting voltage), and its usage conditions are sometimes limited.
この発明は、上記の従来技術の問題点を改善したもので
ある。すなわち、電子銃の放電開始電圧の低下を可能な
らしめ、ひいては長寿命化を達成せしめるものである。This invention improves the problems of the prior art described above. In other words, it is possible to lower the discharge starting voltage of the electron gun, thereby achieving a longer service life.
（問題点を解決するための手段）
この発明は、金属あるいは酸化物からなる基板と、該基
板上に直接形成され、その基板と化学結合を有する酸化
物薄膜から構成されたものであることを特徴とする冷電
子放出用電極である。(Means for Solving the Problems) This invention consists of a substrate made of metal or oxide, and an oxide thin film that is formed directly on the substrate and has a chemical bond with the substrate. This is a characteristic cold electron emission electrode.
また、この発明において、酸化物薄膜は、基板を酸化物
薄膜を構成する前駆体成分を含有する溶液中での水熱処
理または水熱電気化学処理により基板表面に形成された
ものである。Further, in the present invention, the oxide thin film is formed on the surface of the substrate by hydrothermal treatment or hydrothermal electrochemical treatment in a solution containing precursor components constituting the oxide thin film.
このうち、水熱処理による場合、前記酸化物薄膜は、前
記基板を酸化物薄膜の前駆体成分を含有する溶液中で水
熱処理することにより、その基板表面に形成される。具
体的な反応条件としては、オートクレーブなどの反応容
器にアルカリ土類金属、例えばバリウム、ストロンチウ
ムなどを含む溶液とチタン、タングステン、モリブデン
のような高融点金属からなる基板を入れ、例えば１００
〜２００℃に加熱し、飽和蒸気圧下で実施される。In the case of hydrothermal treatment, the oxide thin film is formed on the surface of the substrate by hydrothermally treating the substrate in a solution containing a precursor component of the oxide thin film. As specific reaction conditions, a solution containing an alkaline earth metal such as barium or strontium and a substrate made of a high melting point metal such as titanium, tungsten or molybdenum are placed in a reaction vessel such as an autoclave, and
It is heated to ˜200° C. and carried out under saturated vapor pressure.
また、水熱電気化学処理による場合、前記酸化物薄膜は
、前記基板からなる作用電極と対向電極を酸化物薄膜の
前駆体成分を含有する溶液中に浸漬し、作用電極と対向
電極とに通電して溶液中の前駆体成分と作用電極との反
応により、その基板表面に形成される。具体的な反応条
件としては、オートクレーブなどの反応容器にアルカリ
土類金属、例えばバリウム、ストロンチウムなどを含む
溶液を入れ、さらにチタン、タングステン、モリブデン
のような高融点金属基板からなる作用電極と例えば白金
からなる対向電極を入れ、例えば１００〜２００℃に加
熱するとともに、例えば１０〜１００ｍＡ／ｃｍ２の電
流を作用電極と対向電極間に通電し、飽和蒸気圧下で実
施される。In addition, in the case of hydrothermal electrochemical treatment, the oxide thin film is formed by immersing a working electrode and a counter electrode made of the substrate in a solution containing a precursor component of the oxide thin film, and energizing the working electrode and the counter electrode. It is formed on the surface of the substrate by the reaction between the precursor component in the solution and the working electrode. The specific reaction conditions include placing a solution containing an alkaline earth metal such as barium or strontium in a reaction vessel such as an autoclave, and adding a working electrode made of a high-melting point metal substrate such as titanium, tungsten, or molybdenum to a substrate made of a high-melting metal such as platinum. The method is carried out under saturated vapor pressure by heating a counter electrode consisting of the above electrode and heating it to, for example, 100 to 200° C., and passing a current of, for example, 10 to 100 mA/cm 2 between the working electrode and the counter electrode.
（効果）
この発明の冷電子放出用電極は、従来のものと比較して
放電開始電圧が低く、動作温度も低くまた動作中の消費
電力が少なく、よって連続使用時間の長時間化が可能に
なる。(Effects) Compared to conventional electrodes, the cold electron emission electrode has a lower discharge start voltage, lower operating temperature, and consumes less power during operation, making it possible to extend continuous use time. Become.
（実施例） 以下、この発明を実施例に従って詳細に説明する。(Example) Hereinafter, this invention will be explained in detail according to examples.
第１図は、この発明にかかる冷電子放出用電極を用いた
電子銃を示す概略図である。FIG. 1 is a schematic diagram showing an electron gun using a cold electron emission electrode according to the present invention.
この第１図において、工は冷電子放出用電極であり、タ
ングステンのワイヤ２を介してアルミナ基板４に固定さ
れている端子３に接続されている。In FIG. 1, numeral 1 indicates a cold electron emission electrode, which is connected to a terminal 3 fixed to an alumina substrate 4 via a tungsten wire 2.
第２図は、第１図に示した冷電子放出用電極の断面構造
を示したものである。FIG. 2 shows a cross-sectional structure of the cold electron emission electrode shown in FIG. 1.
この冷電子放出用電極はチタン、タングステン、モリブ
デンのような高融点金属からなる基板５を用いており、
この基板５の上に酸化物薄膜６を形成して冷電子放出用
電極を構成している。This cold electron emission electrode uses a substrate 5 made of a high melting point metal such as titanium, tungsten, or molybdenum.
An oxide thin film 6 is formed on this substrate 5 to constitute a cold electron emission electrode.
第２図に示されるように、冷電子放出用電極の構造とし
ては、基板上に酸化物薄膜が層状に形成されている構造
をとっており、薄膜と基板との界面は化学結合を有して
おり密着強度も高いものとなっている。この冷電子放出
用電極は金属または酸化物からなる基板と仕事関数を引
き下げる効果のあるアルカリ土類金属、例えばバリウム
、ストロンチウムなど、との反応酸化物を薄膜状に形成
させることによって得られる。得られるこの電極の膜厚
は例えば１００Ａ〜１０μｍ程度の”ものがらなり、低
仕事関数の酸化物薄膜である。As shown in Figure 2, the structure of the cold electron emission electrode is such that a thin oxide film is formed in a layered manner on a substrate, and the interface between the thin film and the substrate has chemical bonds. The adhesion strength is also high. This cold electron emitting electrode is obtained by forming a thin film of a reaction oxide between a metal or oxide substrate and an alkaline earth metal, such as barium or strontium, which has the effect of lowering the work function. The resulting electrode has a film thickness of, for example, about 100 A to 10 μm, and is a low work function oxide thin film.
以下に、具体的な実施例にしたがって説明する。A description will be given below based on specific examples.
実施例１゜
反応容器に金属チタン板を設置し、０．５ＨのＢａ （
ＯＨ） ｓ・８Ｈ２０の溶液を入れた。この状態で温度
２００℃、飽和蒸気圧２．０ＭＰａで１時間水熱反応さ
せた。その結果、チタン金属表面に均一なチタン酸バリ
ウム薄膜（試料１）が得られた。Example 1゜A metal titanium plate was installed in a reaction vessel, and 0.5H Ba (
A solution of OH)s.8H20 was added. In this state, a hydrothermal reaction was carried out for 1 hour at a temperature of 200° C. and a saturated vapor pressure of 2.0 MPa. As a result, a uniform barium titanate thin film (Sample 1) was obtained on the titanium metal surface.
実施例２゜
反応容器に金属チタン板と白金板を設置し、０゜５Ｎの
Ｂａ （ＯＨ） ２・８Ｈ２０の溶液を入れた。この状
態で溶液を温度２００℃に加温し、金属チタン板と白金
板との間に１００ｍＡ／ｃｍ”の電流を流し、飽和蒸気
圧２．０ＭＰａで３０分間水熱電気化学反応させた。そ
の結果、チタン金属表面に均一なチタン酸バリウム薄膜
（試料２）が得られた。Example 2 A metal titanium plate and a platinum plate were placed in a reaction vessel, and a 0°5N Ba (OH) 2.8H20 solution was added thereto. In this state, the solution was heated to a temperature of 200°C, and a current of 100 mA/cm was passed between the metal titanium plate and the platinum plate to cause a hydrothermal electrochemical reaction at a saturated vapor pressure of 2.0 MPa for 30 minutes. As a result, a uniform barium titanate thin film (Sample 2) was obtained on the titanium metal surface.
実施例３゜
反応容器に金属タングステン板と白金板を設置し、０．
５ＮのＢａ（ＯＨ）ｚ ・８Ｈ２０の溶液を入れた。Example 3 A metal tungsten plate and a platinum plate were installed in a reaction vessel, and 0.
A solution of 5N Ba(OH)z.8H20 was added.
この状態溶液を温度２００℃に加温する一方、金属タン
グステン板と白金板との間に５０ｍＡ／ｃｍ２の電流を
流し、飽和蒸気圧２，０ＭＰａで３０分間水熱電気化学
反応させた。その結果、タングステン金属表面に均一な
タングステン酸バリウム薄膜（試料３）が得られた。While heating this state solution to a temperature of 200° C., a current of 50 mA/cm 2 was passed between the metal tungsten plate and the platinum plate to cause a hydrothermal electrochemical reaction at a saturated vapor pressure of 2.0 MPa for 30 minutes. As a result, a uniform barium tungstate thin film (sample 3) was obtained on the tungsten metal surface.
この発明によって得られた冷電子放出用電極について、
冷電子放出量の測定を行った。第３図は冷電子放出量の
測定装置を示し、図において、１０は測定対象の試料を
示し、ホルダ１１に取付けられている。試料１０に対し
て２次電子増倍装置１２が対向して設置されている。１
３は２次電子増倍装置１２に接続された電源、１４はプ
レアンプ、１５はオシレータ、１６はアンプ、１７はマ
ルチチャンネルアナライザーである。これらを真空中（
５Ｘ １０−’ｔｏｒｒ）において、試料１０と２次電
子増倍装置装置１２との間に５Ｋｖの直流電圧を印加し
、試料１０を矢印ａの方向に移動させながら、マルチチ
ャンネルアナライザー１７を用いて各試料の冷電子放出
量の測定を行った。Regarding the cold electron emission electrode obtained by this invention,
The amount of cold electron emission was measured. FIG. 3 shows an apparatus for measuring the amount of cold electron emission. In the figure, numeral 10 indicates a sample to be measured, which is attached to a holder 11. A secondary electron multiplier 12 is installed facing the sample 10. 1
3 is a power supply connected to the secondary electron multiplier 12, 14 is a preamplifier, 15 is an oscillator, 16 is an amplifier, and 17 is a multichannel analyzer. These are placed in a vacuum (
A DC voltage of 5 Kv was applied between the sample 10 and the secondary electron multiplier device 12 at The cold electron emission amount of each sample was measured.
第１表はこのようにして測定した冷電子放出量の結果を
示す。なお、表中の参考例は従来一般的に用いられてい
るタングステンである。測定試料のうち、この発明にか
かる試料１〜３は、５ｍｍＸ５ｍｍＸ０．２ｍｍの角板
状のものを用い、従来のタングステンはヘヤピン型のも
のを用い、各試料数５個についての平均値を示した。Table 1 shows the results of the amount of cold electron emission measured in this manner. Note that the reference example in the table is tungsten, which has been commonly used in the past. Among the measurement samples, Samples 1 to 3 according to the present invention were square plate-shaped with dimensions of 5 mm x 5 mm x 0.2 mm, and the conventional tungsten was a hairpin type, and the average value for each sample of 5 was shown. .
第 １ 表
第１表より明らかなように、この発明にかかる基板の上
に形成された酸化物薄膜からなる冷電子放出用電極は、
従来の冷電子放出用電極と比較して１００倍以上の電子
放出能力を示す。したがって、この冷電子放出用電極を
用いて電子銃エミッタを製造すると放電開始電圧が低く
なる。また金属の蒸発飛散が少ないため、従来にくらべ
て寿命の長い冷電子放出用電極が得られることも確認で
きた。Table 1 As is clear from Table 1, the cold electron emitting electrode made of the oxide thin film formed on the substrate according to the present invention has the following characteristics:
It exhibits electron emission capability that is 100 times or more compared to conventional cold electron emission electrodes. Therefore, when an electron gun emitter is manufactured using this cold electron emitting electrode, the firing voltage becomes low. It was also confirmed that because there is less evaporation and scattering of metal, a cold electron emitting electrode with a longer life than conventional electrodes can be obtained.
この発明にかかる構造は平板上に形成されたものに限定
されるものではない。水熱処理または水熱電気化学処理
を用いれば、基板の形状によらず、その上に酸化物薄膜
を形成することが可能であるので、基板をコイル状に巻
いたフィラメントとすることにより表面積の大きな冷電
子放出用電極として用いることもできる。The structure according to the present invention is not limited to one formed on a flat plate. By using hydrothermal treatment or hydrothermal electrochemical treatment, it is possible to form a thin oxide film on the substrate regardless of the shape of the substrate. It can also be used as a cold electron emission electrode.
また、基板としては、チタンなどの金属のほかに、チタ
ンの酸化物などの酸化物を用いても、放電開始電圧が低
く、金属の蒸発飛散が少なく寿命の長い冷電子放出用電
極が得られことを確認した。Furthermore, even if an oxide such as a titanium oxide is used in addition to a metal such as titanium as a substrate, a cold electron emission electrode with a low discharge start voltage and a long life with less metal evaporation and scattering can be obtained. It was confirmed.
この発明にかかる冷電子放出用電極は、半導体超微細加
エブロセッシング用エミッタ、電子顕微鏡用電子銃エミ
ッタ、超高真空質量分析装置のイオンソース用フィラメ
ント、真空管、放電管、蛍光表示管などの用途に有用で
ある。The cold electron emission electrode according to the present invention can be used for semiconductor ultrafine processing emitters, electron gun emitters for electron microscopes, ion source filaments for ultra-high vacuum mass spectrometers, vacuum tubes, discharge tubes, fluorescent display tubes, etc. Useful for applications.
第１図は、この発明にかかる冷電子放出用電極を用いた
電子銃を示す概略図である。
第２図は、第１図に示した冷電子放出用電極の断面構造
を示したものである。
第３図は冷電子放出能の測定装置の概略図。
１は冷電子放出用電極、２はワイヤ、３は端子、４はア
ルミナ基板、５は基板、６は酸化物薄膜。FIG. 1 is a schematic diagram showing an electron gun using a cold electron emission electrode according to the present invention. FIG. 2 shows a cross-sectional structure of the cold electron emission electrode shown in FIG. 1. FIG. 3 is a schematic diagram of a cold electron emission ability measuring device. 1 is a cold electron emission electrode, 2 is a wire, 3 is a terminal, 4 is an alumina substrate, 5 is a substrate, and 6 is an oxide thin film.
Claims (3)
直接形成され、その基板と化学結合を有する酸化物薄膜
から構成されていることを特徴とする冷電子放出用電極
。(1) An electrode for cold electron emission characterized by comprising a substrate made of a metal or an oxide, and an oxide thin film formed directly on the substrate and having a chemical bond with the substrate.
体成分を含有する溶液中で水熱処理することにより、そ
の基板表面に形成されたものであることを特徴とする請
求項（１）記載の冷電子放出用電極。(2) The oxide thin film is formed on the surface of the substrate by hydrothermally treating the substrate in a solution containing a precursor component of the oxide thin film. ) cold electron emission electrode described in
対向電極を酸化物薄膜の前駆体成分を含有する溶液中に
浸漬し、作用電極と対向電極とに通電して溶液中の前駆
体成分と作用電極との反応により、その基板表面に形成
されたものであることを特徴とする請求項（１）記載の
冷電子放出用電極。(3) The oxide thin film is produced by immersing a working electrode and a counter electrode made of the substrate in a solution containing a precursor component of the oxide thin film, and applying electricity to the working electrode and the counter electrode to remove the precursor in the solution. 2. The cold electron emission electrode according to claim 1, wherein the electrode is formed on the surface of the substrate by a reaction between a component and the working electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25307990A JP2958802B2 (en) | 1990-09-21 | 1990-09-21 | Cold electron emission electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25307990A JP2958802B2 (en) | 1990-09-21 | 1990-09-21 | Cold electron emission electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04132133A true JPH04132133A (en) | 1992-05-06 |
| JP2958802B2 JP2958802B2 (en) | 1999-10-06 |
Family
ID=17246199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25307990A Expired - Fee Related JP2958802B2 (en) | 1990-09-21 | 1990-09-21 | Cold electron emission electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2958802B2 (en) |
-
1990
- 1990-09-21 JP JP25307990A patent/JP2958802B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2958802B2 (en) | 1999-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Broers | Electron gun using long‐life lanthanum hexaboride cathode | |
| US9812279B2 (en) | Electrode material with low work function and high chemical stability | |
| US5838096A (en) | Cathode having a reservoir and method of manufacturing the same | |
| WO2008038684A1 (en) | Electron source | |
| Aldrich | The evaporation products of barium oxide from various base metals and of strontium oxide from platinum | |
| US3558966A (en) | Directly heated dispenser cathode | |
| EP1983543A1 (en) | Gun chamber, charged particle beam apparatus and method of operating same | |
| WO2006075715A1 (en) | Electron source manufacturing method | |
| JP4210131B2 (en) | Electron source and method of using electron source | |
| GB1357198A (en) | Method and devices for shaping resharpening or cleaning tips | |
| EP2242084B1 (en) | Method of manufacturing an electron source | |
| JPH07509803A (en) | How to manufacture a cold cathode | |
| JP5363413B2 (en) | Electron source | |
| JPH04132133A (en) | Cold electron discharge electrode | |
| Cochran et al. | Low-voltage field emission from tungsten fiber arrays in a stabilized zirconia matrix | |
| EP1596418B1 (en) | Electron gun | |
| JP4032057B2 (en) | Manufacturing method of electron source | |
| JP2771310B2 (en) | Ultra-high vacuum measurement method and apparatus | |
| JPH03274642A (en) | High luminance la b6 cathode | |
| JP2005332677A (en) | Manufacturing method of electron source and its use | |
| JP3164651B2 (en) | How to operate the thermal field emission cathode | |
| JP3715790B2 (en) | Method for producing impregnated cathode for discharge tube | |
| JP4874758B2 (en) | Electron source | |
| JPH01176641A (en) | Electron gun | |
| Abu-Najm et al. | Jordan Journal of Physics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |