JP7561207B2 - Power conversion device and method for controlling power conversion device - Google Patents

Description

The present invention relates to the configuration and control of a power conversion device, and in particular to technology that is effective when applied to a power conversion device equipped with an IGBT power module incorporating a current sensing element.

In vehicle inverters, motor control is performed by current driving a power module that uses high-voltage semiconductor elements such as Si-IGBTs (Insulated Gate Bipolar Transistors) and SiC-MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). In order to stably control the vehicle's driving speed, it is necessary to accurately detect the output current value of the inverter that drives the motor.

Inverter current control uses a current sensor to detect the output current value and performs feedback control. One method of detecting inverter current is to attach a Hall sensor to the busbar and measure the magnetic field caused by the output current.

Another method is to install a sense IGBT element with a common gate terminal and collector terminal on the same semiconductor chip as the Si-IGBT, which is the switching element that controls the inverter's current, and detect the output current of the inverter by measuring the emitter current of this sense IGBT element. This method does not require components such as hall sensors, and is therefore effective in making inverters smaller and less expensive.

As background technology in this technical field, there is, for example, technology such as Patent Document 1. Patent Document 1 discloses a method for detecting current in an IGBT, in which a main IGBT through which a main current flows, a sense IGBT having a collector terminal and a gate terminal in common with the main IGBT, and a temperature measuring means are provided on the same semiconductor substrate, and the main current is estimated from the emitter current value of the sense IGBT and the temperature measured by the temperature measuring means.

JP 2006-271098 A

In the above-mentioned Patent Document 1, the emitter currents of the main IGBT that passes the main current and the sense IGBT that passes the sense current are assumed to be proportional to each other, and the main current is estimated from the sense current.

However, while the main current is several hundred amps, the sense current is only a few milliamps. The ratio of main current to sense current is related to the area of the main IGBT and the sense IGBT. The IGBT has multiple gate terminals and emitter terminals arranged on the silicon surface, and current flows vertically from the collector on the back surface of the silicon to the emitter on the front surface. At this time, the current flowing through the emitters on the periphery of the arrangement spreads to the periphery of the chip. In the sense IGBT, which is smaller in size than the main IGBT, a large proportion of the current components come from the periphery of the element, and the ratio of the emitter current of the main IGBT to that of the sense IGBT changes in the low current region where the peripheral component of the current is relatively large, and in the region where the inner component of the current is relatively large.

When an IGBT is mounted in a power module, the effect of voltage drop due to wiring resistance must be considered in addition to the element characteristics. Because the emitter terminal wiring of the main IGBT and sense IGBT are different, the sense ratio of the main current to the sense current changes even in the high current region where the effect of wiring resistance is large.

Therefore, the ratio of the main current to the sense current is not constant, but changes depending on the magnitude of the main current. If the main current is calculated from the sense current on the assumption that the ratio of the main current to the sense current is constant, the error from the actual current value will be large, making inverter current control inaccurate and resulting in unstable acceleration control of the vehicle.

Therefore, the object of the present invention is to provide a high-performance, highly reliable power conversion device and a control method thereof that can accurately estimate the main current flowing through the main IGBT using a sense current in the entire operating range of the power conversion device, in a power conversion device equipped with an IGBT power module having a main IGBT and a current sensing IGBT on the same semiconductor chip.

In order to solve the above problem, the present invention provides a power conversion apparatus comprising a first IGBT that passes a main current, a second IGBT that is arranged on the same semiconductor substrate as the first IGBT and passes a sense current, and a measurement device that calculates the main current from the sense current, wherein the measurement device selects a calculation method of the main current in accordance with a current value of the sense current , the measurement device having a sense unit that measures the sense current and a temperature of the semiconductor substrate, a main current calculation unit that calculates the main current based on the sense current measured by the sense unit and temperature information of the semiconductor substrate, a first memory device that stores a plurality of current range information of the sense current, and a second memory device that stores a plurality of calculation methods for calculating the main current from the sense current, and is characterized in that, based on the current value of the sense current measured by the sense unit, a corresponding current range is selected from the plurality of current range information of the first memory device, and a calculation method of the main current corresponding to the selected current range is selected from the plurality of calculation methods of the second memory device .

The present invention also relates to a control method for a power conversion device equipped with an IGBT power module having a main IGBT and a current sense IGBT within the same semiconductor chip, which selects a calculation method for a main current flowing through the main IGBT in accordance with a current value of a sense current flowing through the current sense IGBT, and calculates the main current from the sense current by the selected calculation method, characterized in that the sense current and the temperature of the semiconductor chip are measured, a corresponding current range is selected from a plurality of current range information based on the current value of the measured sense current, a calculation method for the main current corresponding to the selected current range is selected from a plurality of calculation methods, and the main current is calculated from the sense current and temperature information of the semiconductor chip by the selected calculation method .

According to the present invention, in a power conversion device equipped with an IGBT power module having a main IGBT and a current sensing IGBT on the same semiconductor chip, it is possible to realize a high-performance, highly reliable power conversion device and a control method thereof that can accurately estimate the main current flowing through the main IGBT using the sense current in all operating ranges of the power conversion device.

This allows stable feedback control of the output current of the power conversion device regardless of the magnitude of the output current, allowing the motor to operate correctly and stabilizing the acceleration controllability of the vehicle.

Issues, configurations and effects other than those described above will become clear from the description of the embodiments below.

1 is a block diagram showing a schematic configuration of a power conversion device according to a first embodiment of the present invention; 1 is a partial cross-sectional view of an IGBT with a built-in current sense element according to a first embodiment of the present invention. 4 is a graph showing the relationship between the on-resistance and the collector current of the main IGBT and the sense IGBT according to the first embodiment of the present invention. FIG. 1 is a block diagram showing a schematic configuration of a conventional power conversion device. FIG. 11 is a block diagram showing a schematic configuration of an IGBT power module according to a second embodiment of the present invention. 13 is a graph showing the relationship between the second-order term of the on-resistance of the sense IGBT with respect to the on-resistance of the main IGBT and the sense current according to the sixth embodiment of the present invention. 13 is a graph showing the relationship between the second-order term of the emitter current of the sense IGBT with respect to the emitter current of the main IGBT according to the seventh embodiment of the present invention, and the sense current. FIG. 13 is a block diagram showing a schematic configuration of an in-vehicle inverter control system according to an eighth embodiment of the present invention. 4 is a flowchart showing a typical method for controlling a power conversion device according to the present invention.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that the same components in each drawing are given the same reference numerals, and detailed descriptions of overlapping parts will be omitted.

A power conversion device and a control method thereof according to a first embodiment of the present invention will be described with reference to Figures 1 to 3. Figure 1 is a block diagram showing a schematic configuration of the power conversion device of this embodiment. Figure 2 is a partial cross-sectional view of an IGBT with a built-in current sense element mounted on the power conversion device of Figure 1. Figure 3 is a graph showing the relationship between the on-resistance and the collector current of the main IGBT and sense IGBT of the IGBT with a built-in current sense element of Figure 2.

First, the configuration and operation of the power conversion device of this embodiment will be described with reference to Figure 1. Figure 1 shows an example in which the present invention is applied to the ground side of a power conversion device.

As shown in FIG. 1, the main components of the power conversion device of this embodiment include a microcomputer 3, a gate driver 6, a sense IGBT chip 10, and a sense unit 20.

The sense IGBT chip 10 that outputs a current is composed of a main IGBT 11 that passes a main current, and a sense IGBT 12 whose element area on a semiconductor substrate is several thousandths to several tens of thousandsths smaller than that of the main IGBT 11. The collector terminal and gate terminal of the sense IGBT 12 are connected to the collector terminal and gate terminal of the main IGBT 11, respectively.

The sense unit 20 consists of a temperature sensor 4, a current detector 21, and a current detector 22.

The current detector 21 is a current sensing circuit for the emitter current output from the sense IGBT 12. The sense current flowing from the emitter terminal of the sense IGBT 12 is measured by the current detector 21 of the sense unit 20 and converted to a digital value by an AD converter. The output value of the current detector 21 is input to the microcomputer 3 for calculating the main current.

The current detector 22 is a current sensing circuit of the temperature sensor 4. The temperature sensor 4, which measures the temperature of the sensed IGBT chip 10, is composed of a diode, resistor, etc., and outputs the IGBT temperature as a current value, which is input to the microcomputer 3 via the current detector 22.

Figure 2 shows the cross-sectional structure of a part of the main IGBT 11 and the sense IGBT 12 in the sense IGBT chip 10. The arrows in Figure 2 show the flow of current.

In the main IGBT 11, many elements are arranged in a matrix. In the sense IGBT 12, a smaller number of elements are arranged compared to the main IGBT 11.

If the current ratio R1 = a1/b1 of the peripheral current component a1 to the current b1 flowing through the collector terminal of the main IGBT 11, and the current ratio R2 = a2/b2 of the current a2 flowing from the periphery to the current b2 flowing from the collector terminal of the sense IGBT 12, the current ratio R2 is larger than R1. Therefore, in the current operating range where the influence of the peripheral current component on the collector current becomes large, as shown by D1 in Figure 3, the on-resistance (Ron_sense) of the sense IGBT 12 is relatively low compared to the on-resistance (Ron_main) of the main IGBT 11.

For this reason, if the main current and sense current are related by a single linear equation in the entire operating range of the current range (D1) where the influence of the peripheral current component is large and the current range (D2 and D3) where the influence of the peripheral current component is small in the relationship between the collector current and on-resistance in Figure 3, as in Patent Document 1, the error between the main current value calculated from the sense current and the actual main current value will be large. As a result, in motor control using an inverter, the error in the main current value calculated from the sense current will be large, and the motor cannot be controlled correctly.

On the other hand, in this embodiment, when calculating the main current value from the sense current value, the relationship between the collector current and on-resistance in Figure 3 is divided into a current range (D1) where the influence of peripheral current components is large and a current range (D2 and D3) where the influence of peripheral current components is small, and the method of calculating the main current is optimized in each range, thereby improving the accuracy of the main current value calculated over the entire operating range.

As described above, the power conversion device of this embodiment includes a main IGBT 11 (first IGBT) that passes a main current, a sense IGBT 12 (second IGBT) that is arranged on the same semiconductor substrate as the main IGBT 11 (first IGBT) and passes a sense current, and a measurement device (microcomputer 3 and sense unit 20) that calculates the main current from the sense current, and the measurement device (microcomputer 3 and sense unit 20) selects a method of calculating the main current depending on the current value of the sense current.

In addition, the measuring device (microcomputer 3 and sense unit 20) calculates the first on-resistance of the main IGBT 11 (first IGBT) or the second on-resistance of the sense IGBT 12 (second IGBT) from the measurement data of the main current and the measurement data of the sense current, and determines the current range of the sense current based on the dependence of the first on-resistance or the second on-resistance on the sense current.

In addition, the measurement device (microcomputer 3 and sense unit 20) determines the current range of the sense current based on the dependence of the main current on the sense current from the measurement data of the main current and the measurement data of the sense current.

When this technology is applied to motor control using an on-board inverter, motor operation can be stably controlled.

Furthermore, in current range D1 or in each of the current ranges divided into current ranges D2 and D3, the relationship between the main current and the sense current can be accurately approximated using a simple polynomial such as a quadratic function, thereby suppressing the increase in parameters required to calculate the main current.

With reference to Figure 5, an IGBT power module according to a second embodiment of the present invention will be described. In this embodiment, a case will be described in which the output current of the power conversion device is divided into a current range in which the influence of wiring resistance is small and a current range in which the influence of wiring resistance is large, and the relational equation between the main IGBT and the sense IGBT is optimized.

Figure 5 is a block diagram showing a schematic configuration of an IGBT power module mounted on the power conversion device described in Example 1 (Figure 1). Note that while Figure 1 shows only the low-potential side of the power conversion device, Figure 5 shows a block diagram (wiring diagram) of an IGBT power module 100 composed of IGBTs on both the high-potential side and the low-potential side.

The sense IGBT chip 10a is a high-potential side current switch, and is equipped with a main IGBT 11a and a sense IGBT 12a that pass the main current. Similarly, the sense IGBT chip 10b is a low-potential side current switch, and is equipped with a main IGBT 11b and a sense IGBT 12b that pass the main current.

The sense IGBT chips 10a and 10b are connected by metal wiring within the IGBT power module 100. The respective metal wiring resistances are indicated by 13a to 13g.

In particular, when a high current flows between the collector and emitter of an IGBT, the wiring resistance must be taken into consideration. Since the wiring resistances 13a, 13c connected to the emitter terminals of the main IGBTs 11a, 11b are different from the wiring resistances 13d, 13e connected to the emitter terminals of the sense IGBTs 12a, 12b, the voltage-current characteristics seen from the terminals of the IGBT power module 100 differ between the main IGBTs 11a, 11b and the sense IGBTs 12a, 12b in current ranges where the influence of the wiring resistance is large and where the influence is small.

Therefore, similarly to Example 1, in the relationship between collector current and on-resistance in Figure 3, the current range is divided into one in which the wiring resistance has a large effect (D3) and one in which the wiring resistance has a small effect (D1 and D2), and the method of calculating the main current is optimized in each range, thereby improving the accuracy of the main current value calculated over the entire operating range.

When this technology is applied to motor control using an on-board inverter, motor operation can be stably controlled.

In this embodiment, we explain the case where both the peripheral current component of the IGBT and the wiring resistance component of the power module can be ignored.

When both the peripheral current component of the IGBT and the wiring resistance component of the power module cannot be ignored, the current range in Figure 3 is divided into three ranges, D1, D2, and D3, and the relationship between the main current and the sense current is optimized in each range, thereby improving the accuracy of the main current value over the entire operating range.

When this technology is applied to motor control using an on-board inverter, motor operation can be stably controlled.

A power conversion device and a control method thereof according to a fourth embodiment of the present invention will be described with reference to Figures 1, 4, and 9. Figure 4 is a block diagram of a conventional power conversion device shown as a comparative example to make the configuration of the present invention easier to understand. Also, Figure 9 is a flowchart showing a representative control method of the power conversion device of the present invention.

1, the microcomputer 3 includes a storage device (memory) 31, a main current calculation circuit 32 that calculates the main current from the temperature and the sense current, and a power module control circuit 5 that controls the main current. The storage device (memory) 31 also includes a storage device (memory) 31a that stores information on current ranges, and a storage device (memory) 31b that stores information required to calculate the main current from the sense current in each current range.

During the testing process before shipping the power conversion device, the collector current and on-resistance of each of the main IGBT 11 and the sense IGBT 12 are measured to obtain the data shown in Figure 3. Since the current-voltage characteristics of the IGBT are temperature dependent, the characteristics shown in Figure 3 are measured at multiple temperatures.

At each temperature, sense current values C1s and C2s corresponding to collector current C1, which is the boundary between D1 and D2 in Figure 3, and collector current C2, which is the boundary between D2 and D3, are stored in memory device 31a.

Next, for each of current ranges D1, D2, and D3, the relationship between the main current and the sense current at each temperature is determined using the least squares method or the like, and the parameters necessary for calculating the main current are stored in the memory device 31b.

During actual operation of the power conversion device, the main current calculation circuit 32 uses as input values the output value of the current detector 21 and the output value obtained by processing the IGBT temperature information detected by the temperature sensor 4 in the detector 22, compares the value of the current detector 21 with C1s in the memory device 31a, determines which range the current value falls within, D1, D2, or D3, reads the parameters of the calculation formula corresponding to that range from the memory device 32b, and calculates the main current.

On the other hand, in the power conversion device described in the above-mentioned Patent Document 1 and shown in Figure 4, compared to the configuration in Figure 1, the storage device (memory) 31 only has memory 31b that stores information on the relational equation between the main current and the sense current, and does not have information on dividing the current range into multiple ranges. Therefore, the error becomes large in either the low current range or the high current range.

In the above, the sense current values C1s, C2s and parameters indicating the relationship between the main current and the sense current in each current range were obtained from the measured values during the test process of the power conversion device, but these data may also be obtained during the test process of the IGBT power module and stored in the memory device 31a of the microcomputer 3 after assembly of the power conversion device.

The main flow of the control method for the power conversion device of this embodiment is shown in the flowchart of Figure 9.

First, information dividing the IGBT operating current range into a region (D1) where the IGBT peripheral current component is large, a region (D3) where the influence of the wiring resistance of the IGBT power module is large, and a region (D2) between them is stored in memory (step S1).
Next, in each of the regions D1 to D3, the calculation means for calculating the main current from the sense current is optimized, and information required for the calculation is stored in memory (step S2).
Next, during actual operation of the power conversion device, it is determined which of the divided current regions the measured sense current value is in, and the main current is calculated using the main current calculation means (parameters for calculating the main current) of that region (step S3).
Finally, based on the calculated main current, the gate driver is started to drive so that the main current of the IGBT power module becomes a desired current value, and feedback control of the main IGBT is performed (step S4).
As described above, in the power conversion device of this embodiment, the measurement device (microcomputer 3 and sense unit 20) has a sense unit 20 that measures the sense current and the temperature of the semiconductor substrate, a main current calculation circuit 32 that calculates the main current based on the sense current and temperature information of the semiconductor substrate measured by the sense unit 20, a memory 31a (first storage device) that stores a plurality of current range information of the sense current, and a memory 31b (second storage device) that stores a plurality of calculation methods for calculating the main current from the sense current, and based on the current value of the sense current measured by the sense unit 20, a corresponding current range is selected from the plurality of current range information in the memory 31a (first storage device), and a calculation method of the main current corresponding to the selected current range is selected from the plurality of calculation methods in the memory 31b (second storage device).

In addition, the measuring device (microcomputer 3 and sense unit 20) determines which current range of the multiple current range information the current value of the sense current corresponds to, reads out from the memory device 31 a calculation method for the main current corresponding to the determined current range, and calculates the main current.

The method for calculating the main current is, for example, a method in which the main current is a quadratic approximation of the sense current.

In this embodiment, a method for determining the relationship between the main current and the sense current in each current range is described in Examples 1 to 4.

The relationship between the main current and the sense current in each current range D1, D2, D3 or in a current range combining multiple current ranges is calculated by using the least squares method or the like to calculate the main current as a quadratic equation of the sense current based on data measured at multiple temperatures in the test process of the power conversion device or the test process of the IGBT power module.

However, the calculation for determining the relationship between the sense current and the main current is not limited to the least squares method, and other methods may be used. Also, the main current may be a function of both the sense current and temperature, and may be expressed as a single equation.

With reference to Figure 6, an example of how to determine the sense current values C1s and C2s will be described. When calculating the main current using a quadratic equation for the sense current, it is necessary to separate the current range before and after the quadratic term changes significantly. Figure 6 shows the relationship between the quadratic coefficient [Equation (1)] and the sense current when the on-resistance of the main IGBT 11 is a function of the on-resistance of the sense IGBT 12. The thick line is the moving average. For example, let C1s and C2s be the sense current values when the value of Equation (1) exceeds 0.1% and -0.1%, respectively.

ここで、Ron_main：主ＩＧＢＴのオン抵抗、Ron_sense：センスＩＧＢＴのオン抵抗である。

Here, Ron_main is the on-resistance of the main IGBT, and Ron_sense is the on-resistance of the sense IGBT.

Referring to Figure 7, an example is described in which the sense current value C1s is determined from the relationship between the second-order coefficient [Equation (2)] when the main current is a function of the sense current and the sense current.

When calculating the main current using a quadratic equation for the sense current, it is necessary to separate the current range before and after the quadratic term changes significantly. Figure 7 shows the relationship between the value of equation (2) and the sense current value. For example, the sense current value when the value of equation (2) exceeds 0.1% is C1s.

ここで、Ｉ_main：主電流値、Ｉ_sense：センス電流値である。

Here, I_main is the main current value, and I_sense is the sense current value.

An on-board inverter control system according to an eighth embodiment of the present invention will be described with reference to Fig. 8. Fig. 8 is a block diagram showing a schematic configuration of the on-board inverter control system according to the present embodiment, and shows an example in which the present invention is applied to a three-phase inverter.

In Figure 8, the motor 50 is driven by an IGBT power module consisting of three pairs of sense IGBT chips 10a, 10b. The main current flowing from each main IGBT to the motor 50 is determined by the current value and temperature measurement of the sense IGBT in each sense section 20. The control circuit (microcomputer) 3 starts driving the gate driver 6 so that the main current reaches the desired current value using the method shown in any one of the embodiments 1 to 7, and feedback control is performed for each IGBT 10a, 10b.

The present invention is not limited to the above-described embodiments, but includes various modified examples. For example, the above-described embodiments have been described in detail to aid in understanding the present invention, and are not necessarily limited to those having all of the configurations described. It is also possible to replace part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. It is also possible to add, delete, or replace part of the configuration of each embodiment with other configurations.

3...Microcomputer (control circuit), 4...Temperature sensor, 5...Power module control circuit, 6...Gate driver, 10, 10a, 10b...Sense IGBT chip, 11, 11a, 11b...Main IGBT, 12, 12a, 12b...Sense IGBT, 13a to 13g...Wiring resistance in IGBT power module 100, 20...Sense section, 21...Current detector (current sense circuit of sense IGBT 12), 22...Current detector (current sense circuit of temperature sensor 4), 31...Storage device (memory), 31a...Storage device (memory) that stores information on current ranges, 31b...Storage device (memory) that stores information necessary to calculate the main current from the sense current in each current range, 32...Main current calculation circuit circuit, 50...motor, 100...IGBT power module, a1...current component in the peripheral region of the main IGBT 11, a2...current component in the peripheral region of the sense IGBT 12, b1...total current component of the main IGBT 11, b2...total current component of the sense IGBT 12, D1...range of collector current within the operating current range of the IGBT where the current component in the peripheral region is greatly affected, D2...range of collector current between D1 and D3, D3...range of collector current within the operating current range of the IGBT where the wiring resistance of the IGBT power module is greatly affected, C1...collector current at the boundary between D1 and D2, C1s...sense current value when collector current is C1, C2...collector current at the boundary between D2 and D3, C2s...sense current value when collector current is C2

Claims (13)

a first IGBT for passing a main current;
a second IGBT arranged on the same semiconductor substrate as the first IGBT and passing a sense current;
a measurement device that calculates the main current from the sense current,
The measurement device is a power conversion device that selects a calculation method of the main current depending on a current value of the sense current ,
the measurement device includes a sense unit that measures the sense current and the temperature of the semiconductor substrate;
a main current calculation unit that calculates the main current based on the sense current measured by the sense unit and temperature information of the semiconductor substrate;
a first storage device that stores a plurality of current range information of the sense current;
a second storage device that stores a plurality of calculation methods for calculating the main current from the sense current;
selecting a corresponding current range from the plurality of pieces of current range information of the first storage device based on a current value of the sense current measured by the sense unit;
the power conversion device selecting a calculation method of the main current corresponding to the selected current range from a plurality of calculation methods in the second storage device. a first IGBT for passing a main current;
a second IGBT arranged on the same semiconductor substrate as the first IGBT and passing a sense current;
a measurement device that calculates the main current from the sense current,
The measurement device is a power conversion device that selects a calculation method of the main current depending on a current value of the sense current ,
the measurement device calculates the main current by a first calculation method when the sense current is within a first range;
calculating the main current by a second calculation method when the sense current is within a second range that is higher than the first range;
A power conversion device, wherein the first range is a current range in which the influence of the current components in the peripheral regions of each of the first IGBT and the second IGBT is relatively large compared to the current components in the central regions of each of the first IGBT and the second IGBT. a first IGBT for passing a main current;
a second IGBT arranged on the same semiconductor substrate as the first IGBT and passing a sense current;
a measurement device that calculates the main current from the sense current,
The measurement device is a power conversion device that selects a calculation method of the main current depending on a current value of the sense current ,
the measurement device calculates the main current by a first calculation method when the sense current is within a first range;
calculating the main current by a second calculation method when the sense current is within a second range that is higher than the first range;
The second range is a current range in which the influence of wiring resistance components on the current-voltage dependency becomes large. a first IGBT for passing a main current;
a second IGBT arranged on the same semiconductor substrate as the first IGBT and passing a sense current;
a measurement device that calculates the main current from the sense current,
The measurement device is a power conversion device that selects a calculation method of the main current depending on a current value of the sense current ,
the measurement device calculates the main current by a first calculation method when the sense current is within a first range;
calculating the main current by a second calculation method when the sense current is within a second range that is higher than the first range;
calculating the main current by a third calculation method when the sense current is within a third range between the first range and the second range;
the first range is a current range in which an influence of a current component in a peripheral region of each of the first IGBT and the second IGBT is relatively large compared to an influence of a current component in a central region of each of the first IGBT and the second IGBT;
The second range is a current range in which the influence of wiring resistance components on the current-voltage dependency becomes large. The power conversion device according to any one of claims 2 to 4 ,
a storage device for storing a plurality of pieces of current range information of the sense current and a plurality of calculation methods for calculating the main current from the sense current;
the measurement device determines which current range of the plurality of pieces of current range information the current value of the sense current corresponds to;
The power conversion device reads out from the storage device a calculation method for the main current that corresponds to the determined current range, and calculates the main current. The power conversion device according to any one of claims 1 to 5 ,
A power conversion device, wherein the method for calculating the main current is a calculation method in which the main current is a quadratic approximation of the sense current. The power conversion device according to any one of claims 2 to 4 ,
the measurement device calculates a first on-resistance of the first IGBT or a second on-resistance of the second IGBT from the measurement data of the main current and the measurement data of the sense current;
A power conversion device that determines a current range of the sense current based on a dependency of the first on-resistance or the second on-resistance on the sense current. The power conversion device according to any one of claims 2 to 4 ,
The measurement device determines a current range of the sense current based on the dependency of the main current on the sense current from the measurement data of the main current and the measurement data of the sense current. The power conversion device according to any one of claims 1 to 8 ,
A power conversion device installed in an on-board inverter control system. A method for controlling a power conversion device having an IGBT power module including a main IGBT and a current sensing IGBT on a single semiconductor chip, comprising:
selecting a method for calculating a main current flowing through the main IGBT in accordance with a current value of a sense current flowing through the current sense IGBT;
A control method for a power conversion device, which calculates the main current from the sense current by the selected calculation method ,
measuring the sense current and the temperature of the semiconductor chip;
selecting a corresponding current range from a plurality of pieces of current range information based on the current value of the measured sense current;
selecting a method for calculating the main current corresponding to the selected current range from a plurality of calculation methods;
A control method for a power conversion device, the control method calculating the main current from the sense current and temperature information of the semiconductor chip by the selected calculation method. A method for controlling a power conversion device having an IGBT power module including a main IGBT and a current sensing IGBT on a single semiconductor chip, comprising:
selecting a method for calculating a main current flowing through the main IGBT in accordance with a current value of a sense current flowing through the current sense IGBT;
A control method for a power conversion device, which calculates the main current from the sense current by the selected calculation method ,
calculating the main current by a first calculation method when the sense current is within a first range;
calculating the main current by a second calculation method when the sense current is within a second range that is higher than the first range;
A control method for a power conversion device, wherein the first range is a current range in which the influence of the current components in the peripheral regions of the main IGBT and the current sense IGBT is relatively greater than the influence of the current components in the central regions of the main IGBT and the current sense IGBT. A method for controlling a power conversion device having an IGBT power module including a main IGBT and a current sensing IGBT on a single semiconductor chip, comprising:
selecting a method for calculating a main current flowing through the main IGBT in accordance with a current value of a sense current flowing through the current sense IGBT;
A control method for a power conversion device, which calculates the main current from the sense current by the selected calculation method ,
calculating the main current by a first calculation method when the sense current is within a first range;
calculating the main current by a second calculation method when the sense current is within a second range that is higher than the first range;
The second range is a current range in which the influence of wiring resistance components on current-voltage dependency becomes large. A method for controlling a power conversion device having an IGBT power module including a main IGBT and a current sensing IGBT on a single semiconductor chip, comprising:
selecting a method for calculating a main current flowing through the main IGBT in accordance with a current value of a sense current flowing through the current sense IGBT;
A control method for a power conversion device, which calculates the main current from the sense current by the selected calculation method ,
calculating the main current by a first calculation method when the sense current is within a first range;
calculating the main current by a second calculation method when the sense current is within a second range that is higher than the first range;
calculating the main current by a third calculation method when the sense current is within a third range between the first range and the second range;
the first range is a current range in which the influence of a current component in a peripheral region of each of the main IGBT and the current sense IGBT is relatively large compared to a current component in a central region of each of the main IGBT and the current sense IGBT;
The second range is a current range in which the influence of wiring resistance components on current-voltage dependency becomes large.

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