JP7411093B2 - コーティング機器及びそのコーティング方法 - Google Patents
コーティング機器及びそのコーティング方法 Download PDFInfo
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- JP7411093B2 JP7411093B2 JP2022537842A JP2022537842A JP7411093B2 JP 7411093 B2 JP7411093 B2 JP 7411093B2 JP 2022537842 A JP2022537842 A JP 2022537842A JP 2022537842 A JP2022537842 A JP 2022537842A JP 7411093 B2 JP7411093 B2 JP 7411093B2
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- H01J37/32—Gas-filled discharge tubes
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- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
(a)チャンバ体の反応チャンバにおけるモノマー放出ソースとプラズマ励起ソースとの間に前記基材を配置するステップと、
(b)前記プラズマ励起ソースの作用で、前記基材の表面にポリマーフィルム層を形成するように、前記モノマー放出ソースによって、フィルム層形成材料を前記反応チャンバに導入するステップと、を含む。
(a)前記基材90を、前記チャンバ体10の前記反応チャンバ11における前記モノマー放出ソース20と前記プラズマ励起ソース30との間の位置に配置するステップと、
(b)前記モノマー放出ソース20によって、前記フィルム層形成材料201を前記反応チャンバ11に導入し、PECVDプロセスを実施することで、前記プラズマ励起ソース30の作用で、前記基材90の前記表面91に前記ポリマーフィルム層92を形成するステップと、を含む。
(A)前記プラズマ励起ソース30から離れた前記モノマー放出ソース20によって、前記フィルム層形成材料201を前記チャンバ体10の前記反応チャンバ11に供給するステップと、
(B)前記モノマー放出ソース20と前記プラズマ励起ソース30との間に前記基材90を移動させるステップと、
(C)前記プラズマ励起ソース30を活性化して、前記基材90に対してプラズマ体処理を行うことで、前記基材90の前記表面91に前記ポリマーフィルム層92を形成するステップと、を含む。
前記チャンバ体10の前記反応チャンバ11で前記基材90を移動する。これによって、前記基材90の移動経路を限定し、少なくとも一部の移動経路期間において、前記基材90は前記モノマー放出ソース20と前記プラズマ励起ソース30との間に位置する。
前記フィルム層形成材料201を前記チャンバ体10の反応チャンバに放出する。これによって、前記プラズマ励起ソース30の操作期間において、前記基材90に対するプラズマ体処理を活性化する。
(I)前記プラズマ励起ソース30Bを前記チャンバ体10の前記反応チャンバ11の中間領域111に配置するステップと、
(II)複数の前記基材90を前記プラズマ励起ソース30Bの周囲に配置するステップと、
(III)前記モノマー放出ソース20によって、前記フィルム層形成材料201を前記チャンバ体10の前記反応チャンバ11に放出し、前記プラズマ励起ソース30Dを活性化し、複数の前記基材90に対してプラズマ処理を行うステップと、を含む。
(α)複数の前記基材90によって前記プラズマ励起ソース30B/30Cを取り囲んで、前記基材90の2つの対向側に前記モノマー放出ソース20及び前記プラズマ励起ソース30B/30Cを配置するステップと、
(β)前記フィルム層形成材料201を前記チャンバ体10の前記反応チャンバ11に放出することで、前記プラズマ励起ソース30B/30Cによって前記基材90に対してプラズマ体処理を行うステップと、を含む。
(i)前記プラズマ励起ソース30Dの周囲で、複数の基材90を前記支持フレーム40Dに支持するステップであって、前記プラズマ励起ソース30Dが前記チャンバ体10の前記反応チャンバ11内の中間領域111に提供されるステップと、
(ii)前記モノマー放出ソース20によって、前記フィルム層形成材料201を前記チャンバ体10の前記反応チャンバ11に放出し、前記プラズマ励起ソース30Dを活性化し、複数の前記基材90に対してプラズマ処理を行うステップと、を含む。
前記コーティングチャンバ710にガスモノマー又はモノマー蒸気を注入するステップであって、前記コーティングチャンバ710は基材を配置するための前記コーティング領域7101を有する、前記コーティングチャンバ710にガスモノマー又はモノマー蒸気を注入するステップと、
前記コーティングチャンバ710内に前記プラズマ体励起場730を発生させるステップと、
前記ガスモノマー又はモノマー蒸気は前記コーティング領域7101を介して前記プラズマ体励起場30に入って、活性化されることで、基材の表面に薄膜を製造するステップと、を含む。
前記コーティングチャンバにガスモノマー又はモノマー蒸気を注入するステップと、
前記コーティングチャンバ内に前記プラズマ体励起場を形成するステップと、
前記プラズマ体励起場に近接又は離れるように、前記スタンドを相対的に移動又は回転させるステップであって、前記スタンドは基材を支持し、基材の表面に薄膜を製造するためのものである、前記プラズマ体励起場に近接又は離れるように、前記スタンドを相対的に移動又は回転させるステップと、を含む。
Claims (30)
- 複数の基材の表面にフィルム層を形成するためのコーティング機器であって、
反応チャンバを有するチャンバ体と、
フィルム層形成材料を前記チャンバ体の前記反応チャンバに導入するための放出入口を有するモノマー放出ソースと、
前記チャンバ体の前記反応チャンバの中間領域に配置され、当該フィルム層形成材料を励起するためのプラズマ励起ソースと、
前記チャンバ体内の前記プラズマ励起ソースの周囲に複数の当該基材を支持するための支持フレームと、を含み、
前記支持フレームは、前記チャンバ体の前記反応チャンバ内で、前記モノマー放出ソースと前記プラズマ励起ソースとの間を移動するように操作される、
コーティング機器。 - 複数の当該基材が前記モノマー放出ソースと前記プラズマ励起ソースとの間に配置されるように、前記モノマー放出ソースと前記プラズマ励起ソースとの間は間隔を持っている、請求項1に記載のコーティング機器。
- 前記反応チャンバは前記中間領域を有し、前記プラズマ励起ソースは前記反応チャンバの前記中間領域に配置され、前記支持フレームは前記チャンバ体に装着され、前記支持フレームは前記モノマー放出ソースと前記プラズマ励起ソースとの間に複数の基材を支持する、請求項1に記載のコーティング機器。
- 前記プラズマ励起ソースは前記支持フレームに装着され、前記支持フレームは、前記チャンバ体の前記反応チャンバ内を移動するように操作されることで、前記プラズマ励起ソースを、前記反応チャンバ内を移動させるよう駆動する、請求項1に記載のコーティング機器。
- 前記プラズマ励起ソースは前記チャンバ体に装着され、前記支持フレームは、前記チャンバ体の前記反応チャンバ内で、前記プラズマ励起ソースの周囲で回転するように操作される、請求項1に記載のコーティング機器。
- 前記支持フレームは複数の基材を支持するための担持スタンドを含み、前記担持スタンドは、その中心軸線に沿って前記プラズマ励起ソースの周囲で回転するように操作される、請求項1に記載のコーティング機器。
- 前記支持フレームは、前記チャンバ体内を移動するように操作される可動スタンドと、複数の基材を支持するための担持スタンドとを含み、前記担持スタンドは、前記可動スタンドに配置されており、前記チャンバ体内を移動するように操作されることで、前記可動スタンドと前記担持スタンドとの間の相対移動を発生させる、請求項1に記載のコーティング機器。
- 前記支持フレームは、中心軸線に沿って回転するように操作される可動スタンドと、複数の基材を支持するための担持スタンドとを含み、前記担持スタンドは、前記可動スタンドに配置されており、その中心軸線に沿って前記プラズマ励起ソースの周囲で回転するように操作される、請求項1に記載のコーティング機器。
- 前記支持フレームは、前記チャンバ体内を移動するように操作される可動スタンドと、複数の基材を支持するための担持スタンドとを含み、前記担持スタンドは、前記可動スタンドに配置されており、前記チャンバ体内を移動するように操作されることで、前記可動スタンドと前記担持スタンドとの間の相対移動を発生させる、請求項4に記載のコーティング機器。
- 前記支持フレームは、中心軸線に沿って回転するように操作される可動スタンドと、複数の基材を支持するための担持スタンドとを含み、前記担持スタンドは、前記可動スタンドに配置されており、その中心軸線に沿って前記プラズマ励起ソースの周囲で回転するように操作される、請求項4に記載のコーティング機器。
- 前記支持フレームは、中心軸線に沿って回転するように操作される可動スタンドと、複数の基材を支持するための担持スタンドとを含み、前記担持スタンドは、前記可動スタンドに配置されており、その中心軸線に沿って前記プラズマ励起ソースの周囲で回転するように操作される、請求項3に記載のコーティング機器。
- 前記可動スタンドは、天井部枠、底部枠、及び前記天井部枠と前記底部枠との間に延在する複数の接続部材を含み、前記支持フレームは、前記天井部枠と前記底部枠との間に支持される複数の前記担持スタンドを含む、請求項11に記載のコーティング機器。
- 前記担持スタンドは、支持アーム、それぞれ前記支持アームから延在する2つの保持アーム、及び2つの前記保持アームの間に延在して、複数の基材を支持するための1つ又は複数の支持台を含む、請求項11に記載のコーティング機器。
- 各前記担持スタンドは、前記天井部枠に支持される回動ギアをさらに含み、各前記担持スタンドは前記回動ギアに係合する回動機構を含む、請求項12に記載のコーティング機器。
- 各前記担持スタンドは支持アーム、それぞれ前記支持アームから延在する2つの保持アーム、及び前記2つの保持アームの間に延在して、複数の基材を支持するための複数の支持台を含み、前記回動機構は前記支持アームの先端に装着される、請求項14に記載のコーティング機器。
- 前記プラズマ励起ソースは、1対の対向電極の役割を果たし、前記チャンバ体内に放出された当該フィルム層形成材料に電界を印加する第1電極と第2電極とを含み、
前記コーティング機器は電源装置をさらに含み、
前記電源装置は、電源と、前記第1電極を前記電源に電気接続するための電気接続素子とを含む、請求項11に記載のコーティング機器。 - 前記電気接続素子は、前記第1電極に電気接続される第1電気接続素子と、前記電源に接続される第2電気接続素子とを含み、
前記第1電気接続素子は、前記第2電気接続素子に回転可能に電気結合される、請求項16に記載のコーティング機器。 - 前記プラズマ励起ソースは、1対の対向電極の役割を果たし、前記チャンバ体内に放出された当該フィルム層形成材料に電界を印加する第1電極と第2電極とを含み、
前記コーティング機器は電源装置をさらに含み、
前記電源装置は、電源と、前記第1電極を前記電源に電気接続するための電気接続素子とを含む、請求項14に記載のコーティング機器。 - 前記電気接続素子は、前記第1電極に電気接続される第1電気接続素子と、前記電源に接続される第2電気接続素子とを含み、前記第1電気接続素子は、前記第2電気接続素子に回転可能に電気結合される、請求項18に記載のコーティング機器。
- 前記第2電気接続素子は、前記回動ギアを貫通して前記回動ギアの回転移動を阻止する接続端部を有し、前記回動機構は、前記回動ギアに係合して前記回動ギアとともに回転することで、各前記担持スタンドと前記可動スタンドとの間の相対移動を発生させる、請求項19に記載のコーティング機器。
- 前記天井部枠に装着されており、前記可動スタンドを回転するように駆動するように操作される制御ユニットをさらに含み、
前記制御ユニットは、前記天井部枠に装着される装着素子と、前記装着素子から延在する駆動軸とを含み、
前記回動ギアは、前記駆動軸が貫通するための中心孔と、前記第2電気接続素子の前記接続端部が貫通するための保持孔とを含む、請求項20に記載のコーティング機器。 - 前記チャンバ体は内壁を有し、
前記コーティング機器は、前記内壁に隣接し、径方向で当該フィルム層形成材料を前記反応チャンバに放出するように提供される複数の前記モノマー放出ソースをさらに含む、 請求項1に記載のコーティング機器。 - 前記プラズマ励起ソースの放電方式は、直流放電、交流放電、オーディオ放電、無線周波放電、マイクロ波放電、中間周波放電、ペニング放電、火花放電、及びパルス放電の組み合わせのうちの1つ又は複数から選択される、請求項1に記載のコーティング機器。
- モノマー供給ユニットをさらに含み、前記モノマー供給ユニットは、当該フィルム層形成材料の原料を貯蔵するための材料貯蔵装置と、当該原料を気化して、モノマー蒸気の当該フィルム層形成材料を形成するための気化器とを含む、請求項1に記載のコーティング機器。
- モノマー供給ユニットをさらに含み、前記モノマー供給ユニットは、前記モノマー放出ソースに連通し、ガスモノマーの当該フィルム層形成材料を貯蔵するための材料貯蔵器をさらに含む、請求項1に記載のコーティング機器。
- 複数の基材の表面にフィルム層を形成するためのコーティング方法であって、
プラズマ励起ソースの周囲で、複数の基材を支持フレームに支持するステップであって、前記プラズマ励起ソースがチャンバ体の反応チャンバ内の中間領域に提供されるステップと、
モノマー放出ソースによって、フィルム層形成材料を前記チャンバ体の前記反応チャンバに放出し、前記プラズマ励起ソースを活性化して、複数の前記基材に対してプラズマ処理を行うステップと、
を含み、
前記支持フレームは、前記チャンバ体の前記反応チャンバ内で、前記モノマー放出ソースと前記プラズマ励起ソースとの間を移動するように操作される、
コーティング方法。 - 複数の前記基材を前記モノマー放出ソースと前記プラズマ励起ソースとの間に配置するステップをさらに含む、請求項26に記載のコーティング方法。
- 前記プラズマ励起ソースは前記チャンバ体に装着される、請求項26に記載のコーティング方法。
- 前記プラズマ励起ソースは前記支持フレームに装着される、請求項26に記載のコーティング方法。
- 前記支持フレームの可動スタンドを前記チャンバ体の中心軸線に沿って回転させるステップ、及び複数の担持スタンドを回転させるステップであって、各前記担持スタンドは前記可動スタンドに支持されて複数の基材を担持し、前記担持スタンドは前記可動スタンドに連れて回転し、且つその中心軸線に沿って回転するように操作される、前記支持フレームの可動スタンドを前記チャンバ体の中心軸線に沿って回転させるステップ、及び複数の担持スタンドを回転させるステップをさらに含む、請求項26に記載のコーティング方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009517852A (ja) | 2005-11-17 | 2009-04-30 | アプライド マテリアルズ インコーポレイテッド | ポリマーコーティングを備えたチャンバコンポーネント及びその製造方法 |
US20130045563A1 (en) | 2010-02-22 | 2013-02-21 | Solarion AG Photovotaik | Method and device for producing a semiconductor layer |
US20160002784A1 (en) | 2014-07-07 | 2016-01-07 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for depositing a monolayer on a three dimensional structure |
WO2016045858A1 (en) | 2014-09-24 | 2016-03-31 | Basf Se | Process for producing organic-inorganic laminates |
WO2019020391A1 (en) | 2017-07-27 | 2019-01-31 | Evatec Ag | PERMEATION BARRIER |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5814540A (ja) * | 1981-07-17 | 1983-01-27 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜作製方法及び作製装置 |
US4769281A (en) * | 1986-04-15 | 1988-09-06 | The Furukawa Electric Co., Ltd. | Magnetic recording medium and method of manufacturing the same |
US4777908A (en) | 1986-11-26 | 1988-10-18 | Optical Coating Laboratory, Inc. | System and method for vacuum deposition of thin films |
DE3731686A1 (de) * | 1987-09-21 | 1989-04-06 | Leybold Ag | Verfahren und vorrichtung zur herstellung einer korrosionsfesten schicht auf der oberflaeche von mit lack ueberzogenen werkstuecken |
US5214002A (en) | 1989-10-25 | 1993-05-25 | Agency Of Industrial Science And Technology | Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step |
DE4010663C2 (de) * | 1990-04-03 | 1998-07-23 | Leybold Ag | Vorrichtung und Verfahren zur plasmagestützten Beschichtung von Werkstücken |
US6329024B1 (en) | 1996-04-16 | 2001-12-11 | Board Of Regents, The University Of Texas System | Method for depositing a coating comprising pulsed plasma polymerization of a macrocycle |
US6482531B1 (en) | 1996-04-16 | 2002-11-19 | Board Of Regents, The University Of Texas System | Non-fouling, wettable coated devices |
US5876753A (en) | 1996-04-16 | 1999-03-02 | Board Of Regents, The University Of Texas System | Molecular tailoring of surfaces |
WO1997045857A1 (en) * | 1996-05-31 | 1997-12-04 | Ipec Precision, Inc. | Apparatus for plasma jet treatment of substrates |
JP3084395B2 (ja) * | 1997-05-15 | 2000-09-04 | 工業技術院長 | 半導体薄膜の堆積方法 |
ATE316593T1 (de) | 1997-06-14 | 2006-02-15 | Secr Defence | Oberflächenbehandlung |
GB9812457D0 (en) | 1998-06-10 | 1998-08-05 | Secr Defence | Surface coatings |
GB9816077D0 (en) | 1998-07-24 | 1998-09-23 | Secr Defence | Surface coatings |
GB9821267D0 (en) | 1998-10-01 | 1998-11-25 | Secr Defence | Surface coatings |
JP2000252218A (ja) | 1999-03-01 | 2000-09-14 | Kanegafuchi Chem Ind Co Ltd | プラズマcvd装置およびシリコン系薄膜光電変換装置の製造方法 |
JP2002299240A (ja) * | 2001-03-28 | 2002-10-11 | Tadahiro Omi | プラズマ処理装置 |
GB0207350D0 (en) | 2002-03-28 | 2002-05-08 | Univ Sheffield | Surface |
JP4158139B2 (ja) | 2002-04-30 | 2008-10-01 | スズキ株式会社 | 薄膜の製造方法およびその装置 |
GB0211354D0 (en) | 2002-05-17 | 2002-06-26 | Surface Innovations Ltd | Atomisation of a precursor into an excitation medium for coating a remote substrate |
GB0212848D0 (en) | 2002-06-01 | 2002-07-17 | Surface Innovations Ltd | Introduction of liquid/solid slurry into an exciting medium |
US7803433B2 (en) * | 2003-02-12 | 2010-09-28 | Jtekt Corporation | Amorphous carbon film forming method and device |
CN1735708A (zh) * | 2003-06-27 | 2006-02-15 | 应用微型构造公司 | 用于受控涂敷反应蒸气来制造薄膜和涂层的装置和方法 |
KR100718101B1 (ko) | 2003-10-29 | 2007-05-14 | 삼성에스디아이 주식회사 | 나노 금속 입자를 이용한 전계 발광 소자 |
WO2005041893A2 (en) | 2003-10-31 | 2005-05-12 | Queststar Medical, Inc. | Detection of acute myocardial infarction biomarkers |
US8061299B2 (en) | 2004-02-17 | 2011-11-22 | Engle George M | Formation of photoconductive and photovoltaic films |
JP5023505B2 (ja) | 2006-02-09 | 2012-09-12 | 東京エレクトロン株式会社 | 成膜方法、プラズマ成膜装置及び記憶媒体 |
JP5055845B2 (ja) | 2006-06-07 | 2012-10-24 | 富士ゼロックス株式会社 | 薄膜形成方法、及び薄膜形成装置 |
EP2040098A4 (en) * | 2006-07-04 | 2011-03-23 | Ulvac Inc | APPARATUS AND METHOD FOR PRODUCING REFLECTIVE MIRROR |
CN101235488A (zh) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | 在放置于射频等离子体之外的衬底上形成薄膜的技术 |
JP5006122B2 (ja) | 2007-06-29 | 2012-08-22 | 株式会社Sokudo | 基板処理装置 |
JP5128918B2 (ja) | 2007-11-30 | 2013-01-23 | 株式会社Sokudo | 基板処理装置 |
CN101469415B (zh) * | 2007-12-25 | 2010-08-25 | 财团法人工业技术研究院 | 等离子体辅助有机薄膜沉积装置 |
US9175383B2 (en) | 2008-01-16 | 2015-11-03 | Applied Materials, Inc. | Double-coating device with one process chamber |
KR101226426B1 (ko) * | 2008-09-17 | 2013-01-24 | 시너스 테크놀리지, 인코포레이티드 | 플라즈마를 이용한 기상 증착 반응기 및 이를 이용한 박막 형성 방법 |
US20120164353A1 (en) | 2009-09-05 | 2012-06-28 | John Madocks | Plasma enhanced chemical vapor deposition apparatus |
CN102206815B (zh) | 2010-03-30 | 2014-01-22 | 鸿富锦精密工业(深圳)有限公司 | 等离子体镀膜装置 |
KR20110125344A (ko) * | 2010-05-13 | 2011-11-21 | 주식회사 제이씨텍 | 플라즈마를 사용한 박막 증착장치 |
US20120263887A1 (en) | 2011-04-13 | 2012-10-18 | Varian Semiconductor Equipment Associates, Inc. | Technique and apparatus for ion-assisted atomic layer deposition |
JP5644719B2 (ja) * | 2011-08-24 | 2014-12-24 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置及びプラズマ発生装置 |
CN104380435B (zh) | 2012-05-29 | 2018-04-06 | 周星工程股份有限公司 | 基板加工装置及基板加工方法 |
SG11201407907XA (en) | 2012-07-13 | 2015-01-29 | Gallium Entpr Pty Ltd | Apparatus and method for film formation |
US20150291830A1 (en) * | 2012-11-16 | 2015-10-15 | Liquipel Ip Llc | Apparatus and methods for plasma enhanced chemical vapor deposition of polymer coatings |
KR102336686B1 (ko) * | 2014-12-11 | 2021-12-08 | 삼성디스플레이 주식회사 | 기상 증착 장치 및 이를 이용한 기상 증착 방법 |
KR20160137743A (ko) | 2015-05-20 | 2016-12-01 | 주식회사 엠티에스나노테크 | 원자층 증착 장치 및 방법 |
US11158489B2 (en) * | 2016-11-08 | 2021-10-26 | Applied Materials, Inc. | Methods and systems to modulate film stress |
CN106622824B (zh) | 2016-11-30 | 2018-10-12 | 江苏菲沃泰纳米科技有限公司 | 一种等离子体聚合涂层装置 |
CN206304929U (zh) * | 2016-11-30 | 2017-07-07 | 无锡荣坚五金工具有限公司 | 一种等离子体聚合涂层装置 |
US11339477B2 (en) | 2016-11-30 | 2022-05-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus and process |
CN106637140B (zh) | 2016-11-30 | 2018-08-10 | 江苏菲沃泰纳米科技有限公司 | 一种纳米镀膜设备行星回转货架装置 |
CN106756888B (zh) | 2016-11-30 | 2018-07-13 | 江苏菲沃泰纳米科技有限公司 | 一种纳米镀膜设备旋转货架装置 |
CN107201509A (zh) | 2017-05-17 | 2017-09-26 | 李哲峰 | 一种具有同一等离子体源的原子层沉积装置及方法 |
CN207002843U (zh) * | 2017-05-17 | 2018-02-13 | 深圳市原速光电科技有限公司 | 一种具有同一等离子体源的原子层沉积装置 |
CN106958012A (zh) | 2017-05-21 | 2017-07-18 | 无锡荣坚五金工具有限公司 | 一种基材运动式等离子体放电制备纳米涂层的设备及方法 |
CN206768216U (zh) | 2017-05-21 | 2017-12-19 | 无锡荣坚五金工具有限公司 | 一种基材运动式等离子体放电制备纳米涂层的设备 |
CN109023273B (zh) * | 2018-08-06 | 2023-08-11 | 信阳舜宇光学有限公司 | 一种镀膜设备及镀膜方法 |
CN109055917B (zh) | 2018-09-07 | 2020-09-08 | 信阳师范学院 | 一种单室双面镀膜等离子体化学气相沉积系统 |
CN109183002A (zh) | 2018-10-22 | 2019-01-11 | 朱广智 | 一种电极及工件运动的等离子真空镀膜设备及使用方法 |
CN109267037A (zh) * | 2018-11-21 | 2019-01-25 | 新疆大学 | 常压等离子体增强化学气相沉积方法及采用该方法的设备 |
CN109554690A (zh) | 2019-01-04 | 2019-04-02 | 朱广智 | 一种微波等离子真空镀膜设备及使用方法 |
CN110158052B (zh) * | 2019-05-17 | 2021-05-14 | 江苏菲沃泰纳米科技股份有限公司 | 低介电常数膜及其制备方法 |
US11555247B2 (en) * | 2019-09-20 | 2023-01-17 | Jiangsu Favored Nanotechnology Co., Ltd. | Coating apparatus and movable electrode arrangement, movable support arrangement, and application thereof |
-
2020
- 2020-03-10 US US16/814,967 patent/US11898248B2/en active Active
- 2020-06-09 EP EP20901681.5A patent/EP4079933A4/en active Pending
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009517852A (ja) | 2005-11-17 | 2009-04-30 | アプライド マテリアルズ インコーポレイテッド | ポリマーコーティングを備えたチャンバコンポーネント及びその製造方法 |
US20130045563A1 (en) | 2010-02-22 | 2013-02-21 | Solarion AG Photovotaik | Method and device for producing a semiconductor layer |
US20160002784A1 (en) | 2014-07-07 | 2016-01-07 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for depositing a monolayer on a three dimensional structure |
WO2016045858A1 (en) | 2014-09-24 | 2016-03-31 | Basf Se | Process for producing organic-inorganic laminates |
WO2019020391A1 (en) | 2017-07-27 | 2019-01-31 | Evatec Ag | PERMEATION BARRIER |
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EP4079932A1 (en) | 2022-10-26 |
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US20210189567A1 (en) | 2021-06-24 |
KR20220116011A (ko) | 2022-08-19 |
EP4079933A1 (en) | 2022-10-26 |
CN212983045U (zh) | 2021-04-16 |
WO2021120540A1 (zh) | 2021-06-24 |
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