JP7498290B2 - 腫瘍治療電場(ttフィールド)を印加するためのポリマー絶縁層を備えるフレキシブルトランスデューサアレイ - Google Patents
腫瘍治療電場(ttフィールド)を印加するためのポリマー絶縁層を備えるフレキシブルトランスデューサアレイ Download PDFInfo
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Description
本願は、2020年6月30日出願の米国出願第63/046337号、2020年9月25日出願の米国出願第63/083557号、および2021年2月5日出願の米国出願第63/146516号の優先権を主張し、これら出願の内容は全体が参照として本願に組み込まれる。
Claims (17)
- 100kHzから500kHzの間の周波数で生体またはin vitro媒体に交流電場を印加するように構成された腫瘍治療電場(TTフィールド)印可用の装置であって、
領域を有する前面を有する導電性物質の層と、
前記導電性物質の前面に位置して前記領域の少なくとも一部を覆い、前面を有するフレキシブルポリマー層と、
前記導電性物質の層と電気的に接触して位置する導線と、
前記導電性物質の層の後方に位置し、前面を有するフレキシブル第三層と、を備え、
前記フレキシブル第三層の前面の少なくとも一部が粘着剤で被覆されていて、
前記粘着剤の第一領域が、前記導電性物質の層の直接後方に位置して、前記導電性物質の層を支持し、
前記粘着剤の第二領域が、前記第一領域の外側に位置し、皮膚の領域に対して押されると前記皮膚に粘着して、前記皮膚に近接して前記フレキシブルポリマー層を保持するように構成され、また前記皮膚から簡単に取り外せるように構成されていて、
前記フレキシブルポリマー層が、ポリ(VDF‐TrFE‐CTFE)と、ポリ(VDF‐TrFE‐CFE)と、ポリ(VDF‐TrFE‐CFE‐CTFE)とから選択された少なくとも一種のポリマーを備える、装置。 - 前記フレキシブルポリマー層の前面に位置する導電性ハイドロゲルの層を更に備え、
前記導電性ハイドロゲルの層が、前記粘着剤の第二領域によって前記皮膚に近接して前記フレキシブルポリマー層が保持されている際に、前記皮膚に接触するように位置する、請求項1に記載の装置。 - 前記フレキシブルポリマー層が20μm以下の厚さを有する、請求項1に記載の装置。
- 前記フレキシブルポリマー層が10μm以下の厚さを有する、請求項1に記載の装置。
- 前記フレキシブルポリマー層が5μm以下の厚さを有する、請求項1に記載の装置。
- 前記ポリマーが30~80mol%のVDFと、5~60mol%のTrFEと、残余のmol%を成すCFEおよび/またはCTFEと、を備える、請求項1に記載の装置。
- 前記フレキシブルポリマー層が、ポリ(VDF‐TrFE‐CTFE)と、ポリ(VDF‐TrFE‐CFE)と、ポリ(VDF‐TrFE‐CFE‐CTFE)とのうちの少なくとも一種に混合されたセラミックナノ粒子を備える、請求項1に記載の装置。
- 前記セラミックナノ粒子が、チタン酸バリウムとチタン酸バリウムストロンチウムのうちの少なくとも一種を備える、請求項7に記載の装置。
- 前記フレキシブルポリマー層が複数のフレキシブルポリマー領域を備える、請求項1に記載の装置。
- 前記導電性物質の層が複数の導電性パッドを備え、前記複数のフレキシブルポリマー領域が前記複数の導電性パッドに直接印刷、噴霧または成型されている、請求項9に記載の装置。
- 前記複数のフレキシブルポリマー領域の各々が独立して10μm以下の厚さを有する、請求項9に記載の装置。
- 前記導電性物質の層が複数の導電性パッドを備え、前記複数の導電性パッドの面積が合計で少なくとも25cm2である、請求項9に記載の装置。
- 前記ポリマーが30~80mol%のVDFと、5~60mol%のTrFEと、残余のmol%を成すCFEおよび/またはCTFEと、を備え、前記フレキシブルポリマー層が10μm以下の厚さを有する、請求項1に記載の装置。
- 前記フレキシブルポリマー層が、ポリ(VDF‐TrFE‐CTFE)と、ポリ(VDF‐TrFE‐CFE)と、ポリ(VDF‐TrFE‐CFE‐CTFE)とのうちの少なくとも一種に混合されたセラミックナノ粒子を備え、前記セラミックナノ粒子が、チタン酸バリウムとチタン酸バリウムストロンチウムのうちの少なくとも一種を備える、請求項1に記載の装置。
- 被験体(人間を除く)またはin vitro媒体のターゲット領域内に位置する急速分裂細胞を選択的に破壊または成長抑制する方法であって、
前記ターゲット領域の近傍の第一位置に請求項1から14のいずれか一項に記載の装置である第一の装置を配置することと、
前記第一位置に対向する前記ターゲット領域の近傍の第二位置に請求項1から14のいずれか一項に記載の装置である第二の装置を配置することと、
前記第一の装置と前記第二の装置との間に交流電圧を印加することによって、前記ターゲット領域に交流電場を印加することと、を備え、前記交流電場の周波数の範囲が100kHz~500kHzであり、前記交流電場が有効持続時間にわたって前記ターゲット領域に印加されると前記交流電場が被験体のターゲット領域内の急速分裂細胞を選択的に破壊または成長抑制する、方法。 - 前記急速分裂細胞が腫瘍内に存在する、請求項15に記載の方法。
- 前記急速分裂細胞ががん細胞である、請求項15に記載の方法。
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