JP7485700B2 - SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM, AND SUBSTRATE PROCESSING APPARATUS - Google Patents

Description

The present disclosure relates to a substrate processing method, a storage medium, and a substrate processing apparatus.

Patent Document 1 discloses a semiconductor processing apparatus including a processing means for performing a predetermined process on a workpiece whose temperature is controlled by a temperature control means. The control means of this semiconductor processing apparatus changes the processing conditions of the processing means to processing conditions corresponding to the ambient temperature.

Japanese Patent Application Laid-Open No. 4-99018

In a substrate processing apparatus, a liquid processing using a processing liquid may be performed as one type of substrate processing. The present disclosure provides a substrate processing method, a storage medium, and a substrate processing apparatus that can easily bring the execution result of the liquid processing closer to a target processing result.

A substrate processing method according to one exemplary embodiment includes performing a liquid processing including a coating process including a coating liquid ejected toward a surface of the substrate while rotating the substrate at a first rotation speed, and a drying process including a drying process including a coating of the processing liquid on the surface of the substrate by rotating the substrate at a second rotation speed after the coating process, according to specified standard conditions, based on a thickness distribution of a coating obtained by the liquid processing and a predetermined target thickness distribution of the coating, adjusting at least one parameter among the standard conditions that defines a condition of the liquid processing prior to the start of rotation of the substrate at the second rotation speed of the drying process, and performing the liquid processing on the substrate in accordance with control conditions obtained by adjusting the at least one parameter among the standard conditions.

According to the present disclosure, there are provided a substrate processing method, a storage medium, and a substrate processing apparatus that can easily bring the execution result of a liquid processing closer to a target processing result.

FIG. 1 is a schematic perspective view showing an example of a substrate processing system. FIG. 2 is a schematic diagram showing an example of a coating and developing apparatus. FIG. 3 is a schematic diagram illustrating an example of the liquid processing unit. FIG. 4 is a block diagram illustrating an example of a hardware configuration of the control device. FIG. 5 is a flow chart showing an example of a liquid processing method. FIG. 6 is a diagram showing an example of control of the rotation speed in liquid treatment. FIG. 7 is a block diagram showing an example of a functional configuration of the control device. FIG. 8 is a flow chart showing an example of a substrate processing method. FIG. 9 is a flowchart illustrating an example of a process for generating estimated information. FIG. 10 is a schematic diagram showing an example of a film thickness measurement position. FIG. 11 is a graph showing an example of measured film thickness distribution. FIG. 12 is a graph showing an example of a regression equation showing an estimated value of the film thickness. FIG. 13 is a graph showing an example of an estimated value of the film thickness distribution based on the regression equation. FIG. 14 is a flowchart showing an example of a process for adjusting a control condition. FIG. 15 is a diagram for explaining an example of parameter selection.

Various exemplary embodiments are described below.

A substrate processing method according to an exemplary embodiment includes: performing a liquid processing including a coating process including discharging a processing liquid toward a surface of a substrate while rotating the substrate at a first rotation speed; and a drying process including rotating the substrate at a second rotation speed after the coating process to dry a coating of the processing liquid on the surface of the substrate; and adjusting at least one parameter that defines the liquid processing condition before the start of rotation of the substrate at the second rotation speed of the drying process among the reference conditions based on a thickness distribution of the coating obtained by performing the liquid processing according to a predetermined reference condition and a target thickness distribution of the coating; and performing the liquid processing on the substrate according to a control condition obtained by adjusting at least one parameter among the reference conditions. It is considered that the liquid processing condition before the start of rotation of the substrate at the second rotation speed of the drying process has a large effect on the thickness distribution that is the result of the liquid processing. In the above method, the parameter that defines the liquid processing condition before the start of rotation of the substrate at the second rotation speed of the drying process is adjusted, so that the result of the liquid processing can be easily brought close to the target processing result.

The coating process may further include rotating the substrate at a third rotation speed different from the first rotation speed after completion of the discharge of the treatment liquid. It is considered that the conditions of the rotation of the substrate performed after completion of the discharge of the treatment liquid also have a large effect on the film thickness distribution. When adjusting parameters related to the rotation of the substrate after completion of the discharge, it becomes possible to easily adjust the conditions.

Adjusting the at least one parameter may include adjusting at least one selected from the group consisting of the first rotation speed, the discharge time of the treatment liquid, the discharge speed of the treatment liquid, the third rotation speed, the time for rotating the substrate at the third rotation speed, the temperature of the substrate at the start of discharging the treatment liquid, and the temperature of the treatment liquid. Since the film thickness distribution fluctuates when any one of the multiple parameters included in the above group changes, it is possible to adjust the film thickness distribution of the execution result to approach the target film thickness distribution.

The liquid processing may further include a substrate temperature adjustment process for adjusting the temperature of the substrate before the coating process. Adjusting at least one parameter may include adjusting the temperature of the substrate at the start of ejection of the processing liquid. Adjusting the temperature of the substrate at the start of ejection of the processing liquid may include adjusting a target temperature in the substrate temperature adjustment process. In this case, the temperature of the substrate at the start of ejection can be adjusted in the substrate temperature adjustment process. Therefore, when adjusting the temperature of the substrate at the start of ejection, the conditions can be easily adjusted.

Adjusting at least one parameter may include generating estimated information that associates changes in each of the multiple parameters constituting the reference condition with an estimated value of the film thickness distribution of the coating, and calculating an adjustment amount of the at least one parameter based on the estimated information. In this case, the effect of changing the liquid processing conditions on the film thickness distribution can be quantitatively determined. Therefore, it is possible to adjust the liquid processing conditions so that the film thickness distribution obtained by performing the liquid processing approaches the target film thickness distribution without relying on the skill or experience of an operator or the like.

Calculating the adjustment amount of at least one parameter may include selecting, from among the multiple parameters, a parameter to be adjusted that brings the predicted thickness distribution of the coating based on the estimated information closer to the target thickness distribution, and calculating the adjustment amount of the at least one parameter according to the value of the parameter to be adjusted when the predicted thickness distribution of the coating approaches the target thickness distribution. In this case, since the parameter to be adjusted is selected based on the estimated information, it is possible to shorten the time required to adjust the liquid processing conditions.

Priorities may be predefined for the multiple parameters. Selecting the parameters to be adjusted from the multiple parameters may include selecting the parameters to be adjusted based on the priorities as well. In this case, the parameters to be adjusted are selected based on the priorities as well, making it easier to adjust the liquid processing conditions.

The plurality of parameters may include a pair of anti-correlated parameters having a relationship in which the estimated values of the thickness distribution of the coating included in the estimation information cancel each other out. Selecting the adjustment target parameter from the plurality of parameters may include selecting the adjustment target parameter from the plurality of parameters such that both of the pair of anti-correlated parameters are not included in the adjustment target parameters. In this case, it is possible to reduce the possibility that the number of parameters to be adjusted becomes larger than necessary, and therefore it is possible to easily adjust the parameters.

The generation of the estimated information may include performing the liquid processing by varying one of the parameters in multiple stages, acquiring a first actual measurement value of the thickness distribution of the coating for each stage of the variation, and generating a plurality of regression equations that indicate a change in thickness of the coating according to the one parameter for each of the positions on the substrate based on the actual measurement value. In this case, the plurality of regression equations makes it possible to obtain a predicted value of the thickness of the coating even for the value of the parameter for which an actual measurement value has not been obtained.

Generating the estimated information may include performing the liquid processing by varying two of the multiple parameters in multiple stages, acquiring a second measured value of the film thickness distribution for each combination of the varying stages, and generating, based on the actual measured values, multiple model equations for multiple positions on the substrate, including the mutual influence of the two parameters and indicating the change in film thickness according to the two parameters. Depending on the combination of parameters, the change in one parameter may affect the change in film thickness according to the other parameter. In the above configuration, a model equation that takes into account the mutual influence is generated, making it possible to more accurately predict the film thickness.

A storage medium according to one exemplary embodiment is a computer-readable storage medium storing a program for causing an apparatus to execute the above-described substrate processing method.

A substrate processing apparatus according to an exemplary embodiment includes a liquid processing unit that performs liquid processing including a coating process including discharging a processing liquid toward a surface of the substrate while rotating the substrate at a first rotation speed, and a drying process including rotating the substrate at a second rotation speed after the coating process to dry a coating of the processing liquid on the surface of the substrate, and a control unit that controls the liquid processing unit. The control unit adjusts at least one parameter that defines a liquid processing condition prior to the start of rotation of the substrate at the second rotation speed of the drying process among the reference conditions based on a film thickness distribution of the coating obtained by causing the liquid processing unit to perform the liquid processing according to a predetermined reference condition and a predetermined target film thickness distribution of the coating, and performs liquid processing on the substrate by the liquid processing unit according to a control condition obtained by adjusting the at least one parameter among the reference conditions. In this case, as in the above-mentioned substrate processing method, it is possible to easily bring the execution result of the liquid processing closer to the target processing result.

Hereinafter, an embodiment will be described with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and duplicated description will be omitted.

[Substrate Processing System]
The substrate processing system 1 (substrate processing apparatus) shown in FIG. 1 is a system that forms a photosensitive film on a workpiece W, exposes the photosensitive film, and develops the photosensitive film. The workpiece W to be processed is, for example, a substrate, or a substrate on which a film, a circuit, etc. have been formed by performing a predetermined process. The substrate included in the workpiece W is, for example, a wafer containing silicon. The workpiece W (substrate) may be formed in a circular shape. The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), etc., or may be an intermediate product obtained by performing a predetermined process on such a substrate. The photosensitive film is, for example, a resist film.

The substrate processing system 1 includes a coating/developing apparatus 2, an exposure apparatus 3, and a control device 100 (control unit). The exposure apparatus 3 is an apparatus that exposes a resist film (photosensitive coating) formed on a workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates an exposure target portion of the resist film with energy rays by a method such as immersion exposure. The coating/developing apparatus 2 performs a process of forming a resist film by applying a resist (chemical solution) to the surface of the workpiece W before the exposure process by the exposure apparatus 3, and performs a development process of the resist film after the exposure process.

(Substrate Processing Apparatus)
1 and 2, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and an interface block 6 are arranged in a direction parallel to the substrate W.

The carrier block 4 introduces the workpiece W into the coating/developing device 2 and removes the workpiece W from the coating/developing device 2. For example, the carrier block 4 can support a plurality of carriers C for the workpieces W, and has a built-in transport device A1 including a delivery arm. The carrier C accommodates, for example, a plurality of circular workpieces W. The transport device A1 removes the workpiece W from the carrier C and delivers it to the processing block 5, and receives the workpiece W from the processing block 5 and returns it to the carrier C. The processing block 5 has a plurality of processing modules 11, 12, 13, and 14.

The processing module 11 incorporates a coating unit U1, a heat treatment unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 11 forms an underlayer film on the surface of the workpiece W using the coating unit U1 and the heat treatment unit U2. The coating unit U1 applies a treatment liquid for forming the underlayer film onto the workpiece W. The heat treatment unit U2 performs various heat treatments associated with the formation of the underlayer film.

The processing module 12 (liquid processing unit) incorporates a coating unit U1, a heat processing unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 12 performs liquid processing including forming a resist film on the underlayer film using the coating unit U1 and the heat processing unit U2. The coating unit U1 applies a processing liquid (resist) for forming a resist film onto the underlayer film. The heat processing unit U2 performs various heat processes associated with the formation of the coating film.

The processing module 12 may further include a temperature adjustment unit 16 and a film thickness measurement unit 18. The temperature adjustment unit 16 performs a process of adjusting the temperature of the workpiece W (hereinafter referred to as a "substrate temperature adjustment process") before the coating unit U1 supplies resist to the workpiece W. The temperature adjustment unit 16 adjusts the temperature of the workpiece W, for example, by cooling the workpiece W. The temperature adjustment unit 16 may cool the workpiece W by any method. Examples of cooling methods include cooling by a cooling plate, cooling by a pre-wet thinner, and cooling by supplying a liquid such as pure water or a mist to the back surface of the workpiece W.

The film thickness measuring unit 18 acquires information on the thickness of the resist film formed on the surface Wa of the workpiece W (hereinafter referred to as "film thickness information"). For example, the film thickness measuring unit 18 acquires pixel values in a captured image of the surface Wa of the workpiece W as the film thickness information. The pixel value is a numerical value indicating the state of each pixel constituting the image. As an example, the pixel value is a numerical value indicating the shading level of the color of the pixel (for example, the gray level in a black and white image). In the captured image of the surface Wa, the pixel value may vary depending on the height of the imaged portion corresponding to the pixel. That is, the pixel value may also vary depending on the thickness of the resist film in the imaged portion. Note that the film thickness measuring unit 18 may acquire film thickness information based on reflected light obtained by irradiating light onto the workpiece W instead of the captured image.

The processing module 13 incorporates a coating unit U1, a heat treatment unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 13 forms an upper layer film on the resist film using the coating unit U1 and the heat treatment unit U2. The coating unit U1 applies a liquid for forming the upper layer film onto the resist film. The heat treatment unit U2 performs various heat treatments associated with the formation of the upper layer film.

The processing module 14 incorporates a coating unit U1, a heat treatment unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 14 uses the coating unit U1 and the heat treatment unit U2 to perform development of the resist film that has been subjected to exposure processing and heat treatment associated with the development processing. The coating unit U1 applies a developer to the surface of the exposed workpiece W, and then washes it away with a rinse liquid to perform development processing of the resist film. The heat treatment unit U2 performs various heat treatments associated with the development processing. Specific examples of heat treatments include a heat treatment before the development processing (PEB: Post Exposure Bake), a heat treatment after the development processing (PB: Post Bake), etc.

A shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. A transport device A7 including a lifting arm is provided near the shelf unit U10. The transport device A7 lifts and lowers the workpiece W between the cells of the shelf unit U10.

A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is partitioned into a plurality of cells arranged in the vertical direction.

The interface block 6 transfers the workpiece W between the exposure device 3. For example, the interface block 6 has a built-in transport device A8 including a transfer arm, and is connected to the exposure device 3. The transport device A8 transfers the workpiece W placed on the shelf unit U11 to the exposure device 3. The transport device A8 receives the workpiece W from the exposure device 3 and returns it to the shelf unit U11.

(Coating unit)
Next, an example of the coating unit U1 of the processing module 12 will be described in detail. The coating unit U1 performs a process including discharging a processing liquid toward the workpiece W while rotating the workpiece W (hereinafter referred to as a "coating process"). The coating unit U1 also performs a process including drying a coating of the processing liquid on the surface Wa of the workpiece W by rotating the workpiece W after the coating process (hereinafter referred to as a "drying process"). In other words, the liquid process performed by the processing module 12 includes a substrate temperature adjustment process, a coating process, and a drying process. As shown in FIG. 3, the coating unit U1 has a rotation holding unit 20 and a processing liquid supply unit 30.

The rotating and holding unit 20 holds and rotates the workpiece W based on the operation instruction of the control device 100. The rotating and holding unit 20 has, for example, a holding unit 22 and a rotation drive unit 24. The holding unit 22 supports the center of the workpiece W arranged horizontally with the surface Wa facing up, and holds the workpiece W, for example, by vacuum suction or the like. The rotation drive unit 24 is an actuator including a power source such as an electric motor, and rotates the holding unit 22 around a vertical axis Ax. This causes the workpiece W on the holding unit 22 to rotate. The holding unit 22 may hold the workpiece W so that the center of the workpiece W approximately coincides with the axis Ax. The holding unit 22 rotates the workpiece W at a rotation speed according to the operation instruction of the control device 100, for example. The coating unit U1 may have a cup (not shown) that surrounds the periphery of the workpiece W held by the holding unit 22.

The processing liquid supply unit 30 supplies the processing liquid to the surface Wa of the workpiece W by ejecting the processing liquid toward the surface Wa based on the operation instructions of the control device 100. The processing liquid is a solution (resist) for forming a resist film. The processing liquid supply unit 30 has, for example, a nozzle 32, a liquid supply unit 38, a supply path 34, and an opening/closing valve 36. The nozzle 32 ejects the processing liquid onto the surface Wa of the workpiece W held by the holding unit 22. The nozzle 32 is, for example, disposed above the workpiece W and ejects the processing liquid downward.

The liquid supply unit 38 supplies the processing liquid to the nozzle 32 through the supply path 34 based on the operation instruction of the control device 100. The liquid supply unit 38 sends out the processing liquid toward the nozzle 32, for example, by a pump or the like. The liquid supply unit 38 may supply the processing liquid to the nozzle 32 at a flow rate (flow rate per unit time) according to the operation instruction of the control device 100. As an example, the liquid supply unit 38 may include a flow rate sensor that measures the flow rate of the processing liquid, and may send the processing liquid toward the nozzle 32 at a pressure according to the operation instruction based on the measured value of the flow rate. The processing liquid supplied from the liquid supply unit 38 to the nozzle 32 is discharged from the nozzle 32 toward the workpiece W, so the flow rate of the processing liquid discharged from the nozzle 32 may vary depending on the flow rate of the processing liquid supplied from the liquid supply unit 38 to the nozzle 32.

The liquid supply unit 38 may supply the nozzle 32 with the processing liquid at a temperature according to the operation instruction of the control device 100. As an example, the liquid supply unit 38 may have a function of adjusting the temperature of the processing liquid in the liquid source, and may adjust the temperature of the processing liquid in the liquid source according to the operation instruction. The temperature of the processing liquid discharged from the nozzle 32 may vary depending on the temperature of the processing liquid in the liquid source of the liquid supply unit 38.

The on-off valve 36 is provided in the supply path 34 between the nozzle 32 and the liquid supply unit 38. The on-off valve 36 switches the open/close state of the supply path 34 between an open state and a closed state based on an operation command from the control device 100. The on-off valve 36 is, for example, an air operation valve. When the on-off valve 36 receives an open command from the control device 100, it transitions the open/close state of the supply path 34 from a closed state to an open state. This starts the ejection of the treatment liquid from the nozzle 32. When the on-off valve 36 receives a close command from the control device 100, it transitions the open/close state of the supply path 34 from an open state to a closed state. This stops the ejection of the treatment liquid from the nozzle 32.

The control device 100 controls the coating/developing device 2. The control device 100 executes liquid processing on the workpiece W by the processing module 12 according to predetermined conditions (hereinafter referred to as "control conditions"). The control conditions include a plurality of parameters that define the operation of the device that executes the liquid processing, the state of the processing liquid, and the environment around the workpiece W, and will be described in detail later. For example, the control device 100 executes substrate temperature control processing on the workpiece W by the temperature adjustment unit 16 according to the control conditions, and executes coating processing and drying processing on the workpiece W by the coating unit U1 according to the control conditions. The control device 100 has, for example, an operation instruction unit 102, a condition storage unit 104, and a condition adjustment unit 110 as functional configurations (hereinafter referred to as "functional modules"). Note that the processing executed by the operation instruction unit 102, the condition storage unit 104, and the condition adjustment unit 110 corresponds to the processing executed by the control device 100.

The operation instruction unit 102 is configured to control each element of the processing module 12, thereby causing the processing module 12 to perform liquid processing on the workpiece W. The condition memory unit 104 is configured to store control conditions. In other words, the operation instruction unit 102 causes the processing module 12 to perform liquid processing on the workpiece W in accordance with the control conditions stored in the condition memory unit 104. The condition adjustment unit 110 is configured to adjust the control conditions. The condition adjustment unit 110 updates the control conditions stored in the condition memory unit 104, for example. The control conditions and the method of adjusting the control conditions will be described in detail later.

The control device 100 is composed of one or more control computers. For example, the control device 100 has a circuit 200 shown in FIG. 4. The circuit 200 has one or more processors 202, a memory 204, a storage 206, an input/output port 208, and a timer 212. The storage 206 has a computer-readable storage medium such as a hard disk. The storage medium stores a program for causing the control device 100 to execute a substrate processing method including an adjustment process, which will be described later. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 204 temporarily stores the program loaded from the storage medium of the storage 206 and the calculation results by the processor 202. The processor 202 configures each functional module by executing the above programs in cooperation with the memory 204. The input/output port 208 inputs and outputs electrical signals between the temperature adjustment unit 16, the film thickness measurement unit 18, the spinning and holding unit 20, the processing liquid supply unit 30, and the like, in accordance with instructions from the processor 202. The timer 212 measures the elapsed time by, for example, counting a reference pulse at a constant period.

When the control device 100 is composed of a plurality of control computers, each functional module may be realized by a separate control computer. The control device 100 may be composed of a control computer including an operation instruction unit 102 and a condition storage unit 104, and a control computer including a condition adjustment unit 110. Alternatively, each of these functional modules may be realized by a combination of two or more control computers. In these cases, the multiple control computers may be connected to each other so as to be able to communicate with each other and execute the substrate processing procedure in cooperation. Note that the hardware configuration of the control device 100 is not necessarily limited to one in which each functional module is configured by a program. For example, each functional module of the control device 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates the logic circuit.

The specific configuration of the substrate processing system is not limited to the above-described configuration of the substrate processing system 1. The substrate processing system may be any system as long as it includes a liquid processing unit that performs liquid processing including a coating process and a drying process, and a control device that can control the liquid processing unit.

[Substrate Processing Method]
Next, a description will be given of the processing of the workpiece W executed in the substrate processing system 1. The operation instruction unit 102 of the control device 100 controls the coating/developing device 2 to execute processing on the workpiece W, for example, in the following procedure. First, the operation instruction unit 102 controls the transport device A1 to transport the workpiece W in the carrier C to the shelf unit U10, and controls the transport device A7 to place the workpiece W in a cell for the processing module 11.

Next, the operation instruction unit 102 controls the transport device A3 to transport the workpiece W from the shelf unit U10 to the coating unit U1 and heat treatment unit U2 in the processing module 11. The operation instruction unit 102 also controls the coating unit U1 and heat treatment unit U2 to form an underlayer film on the surface Wa of the workpiece W. Thereafter, the operation instruction unit 102 controls the transport device A3 to return the workpiece W on which the underlayer film has been formed to the shelf unit U10, and controls the transport device A7 to place the workpiece W in the temperature adjustment unit 16 of the processing module 12.

Next, the operation instruction unit 102 controls the temperature adjustment unit 16 to cool the workpiece W before the resist is discharged. The operation instruction unit 102 controls the transport device A3 to transport the workpiece W in the temperature adjustment unit 16 to the coating unit U1, the heat treatment unit U2, and the film thickness measurement unit 18 in the processing module 12. The operation instruction unit 102 controls the coating unit U1 and the heat treatment unit U2 to form a resist film on the lower layer film of the workpiece W. The control device 100 controls the film thickness measurement unit 18 to obtain film thickness information for measuring the film thickness of the resist film. An example of a liquid processing method performed in the processing module 12 will be described later. Thereafter, the operation instruction unit 102 controls the transport device A3 to return the workpiece W to the shelf unit U10, and controls the transport device A7 to place the workpiece W in a cell for the processing module 13.

Next, the operation instruction unit 102 controls the transport device A3 to transport the workpiece W on the shelf unit U10 to the coating unit U1 and heat treatment unit U2 in the processing module 13. The operation instruction unit 102 also controls the coating unit U1 and heat treatment unit U2 to form an upper layer film on the resist film of the workpiece W. Thereafter, the operation instruction unit 102 controls the transport device A3 to transport the workpiece W to the shelf unit U11.

Next, the operation instruction unit 102 controls the transport device A8 to send the workpiece W stored in the shelf unit U11 to the exposure device 3. Then, in the exposure device 3, an exposure process is applied to the resist film formed on the workpiece W. Thereafter, the operation instruction unit 102 controls the transport device A8 to receive the workpiece W that has been subjected to the exposure process from the exposure device 3 and place the workpiece W in a cell for the processing module 14 in the shelf unit U11.

Next, the operation instruction unit 102 controls the transport device A3 to transport the workpiece W on the shelf unit U11 to the heat treatment unit U2 of the processing module 14. Then, the operation instruction unit 102 controls the coating unit U1 and the heat treatment unit U2 to perform the heat treatment associated with the development process and the development process. With the above, the control device 100 completes the substrate processing for one workpiece W.

(Liquid Processing Method)
Next, an example of a liquid processing method performed in the processing module 12 will be described with reference to Figures 5 and 6. In this liquid processing method, as shown in Figure 5, the operation instruction unit 102 of the control device 100 first controls the temperature adjustment unit 16 to execute a substrate temperature adjustment process to adjust the temperature of the workpiece W (step S11). For example, in the substrate temperature adjustment process, the operation instruction unit 102 controls the temperature adjustment unit 16 so that the temperature of the workpiece W approaches a target temperature included in the control conditions. As an example, the operation instruction unit 102 causes the temperature adjustment unit 16 to cool the workpiece W so that the temperature of the workpiece W approaches the target temperature included in the control conditions.

The operation instruction unit 102 controls the transport device A3 to transport the workpiece W to the coating unit U1 after the substrate temperature adjustment process. For example, the operation instruction unit 102 controls the transport device A3 so that the workpiece W that has been subjected to the substrate temperature adjustment process (cooled) is held in the holder 22. After the workpiece W is transported to the coating unit U1, the temperature of the workpiece W at the start of the next process (step S12 described below) may vary depending on the temperature of the workpiece W adjusted in the substrate temperature adjustment process. In other words, by adjusting the temperature (target temperature) of the workpiece W in the substrate temperature adjustment process, the temperature of the workpiece W at the start of the next process is adjusted.

Next, the operation instruction unit 102 changes the rotation speed of the workpiece W held by the holder 22 (step S12). Fig. 6 shows an example of control of the rotation speed of the workpiece W after step S12. For example, as shown in Fig. 6, the operation instruction unit 102 controls the rotation drive unit 24 to accelerate the rotation of the stopped workpiece W to a rotation speed ω1. The rotation speed ω1 is included in the control conditions.

Next, the operation instruction unit 102 controls the processing liquid supply unit 30 to start discharging the processing liquid (resist) from the nozzle 32 (step S13). The operation instruction unit 102 outputs an open command to the opening and closing valve 36 to start discharging the processing liquid toward the front surface Wa of the workpiece W rotating at a rotation speed ω1, for example. The opening and closing state of the supply path 34 is switched from a closed state to an open state by the opening and closing valve 36, thereby starting discharging the processing liquid. The operation instruction unit 102 may control the liquid supply unit 38 to discharge the processing liquid from the nozzle 32 according to the discharge speed of the processing liquid included in the control condition. The operation instruction unit 102 may also control the liquid supply unit 38 to discharge the processing liquid having a temperature according to the set temperature of the processing liquid included in the control condition from the nozzle 32.

Next, the operation instruction unit 102 waits until a first set time ts1 has elapsed since the start of the discharge of the treatment liquid (step S14). As a result, during at least a part of the first set time ts1, the treatment liquid is discharged toward the surface Wa of the workpiece W while the workpiece W rotates at a rotation speed ω1. The first set time ts1 is set, for example, so that an amount of treatment liquid sufficient to form a coating on the surface Wa of the workpiece W is supplied, and is included in the control conditions.

When the first set time ts1 has elapsed, the operation instructing unit 102 controls the processing liquid supply unit 30 to stop the discharge of the processing liquid from the nozzle 32 (step S15). The operation instructing unit 102 outputs a close command to the opening and closing valve 36 to stop the discharge of the processing liquid toward the front surface Wa of the workpiece W, for example. The opening and closing state of the supply path 34 is switched from an open state to a closed state by the opening and closing valve 36, thereby stopping the discharge of the processing liquid.

The first set time ts1 may be determined by the timing at which the operation instruction unit 102 outputs an open command to the opening/closing valve 36 and the timing at which the operation instruction unit 102 outputs a close command to the opening/closing valve 36. In this case, the time at which the treatment liquid is discharged while the workpiece W rotates at the rotation speed ω1 may substantially coincide with the first set time ts1 or may vary according to the first set time ts1. It is assumed that there is a difference between the output timing of the open command to the opening/closing valve 36 and the timing at which the discharge of the treatment liquid actually starts, and there is a difference between the output timing of the close command and the timing at which the discharge of the treatment liquid actually stops. However, even if such a difference occurs, by adjusting the first set time ts1, the timing at which the discharge of the treatment liquid starts or stops is also adjusted, so that the time at which the treatment liquid is discharged onto the front surface Wa while the workpiece W rotates at the rotation speed ω1 is adjusted.

In addition, even if there is a difference between the open/close command and the actual start/stop, the output timing of the open command or the close command may be set so that the first set time ts1 coincides with the time when the treatment liquid is discharged onto the workpiece W while the workpiece W rotates at the rotation speed ω1. For example, the operation instruction unit 102 may output an open command to the opening/closing valve 36 during the change of the rotation speed in step S02 so that the discharge of the treatment liquid starts immediately after the workpiece W starts rotating at the rotation speed ω1. Then, the operation instruction unit 102 may output a close command to the opening/closing valve 36 when the first set time ts1 has elapsed since the start of the discharge of the treatment liquid. In this case, the timing at which the discharge of the treatment liquid stops is later than the timing at which the first set time ts1 ends. The processes in steps S12 to S15 correspond to the discharge process included in the coating process.

Next, the operation instruction unit 102 changes the rotation speed of the workpiece W (step S16). For example, as shown in FIG. 6, the operation instruction unit 102 controls the rotation drive unit 24 to decelerate the rotation of the workpiece W from the rotation speed ω1 to the rotation speed ω2 (third rotation speed). The rotation speed ω2 is included in the control conditions and is different from the rotation speed ω1. The rotation speed ω2 may be smaller than the rotation speed ω1. As an example, the rotation speed ω2 is about 1/50 to 1/2 times the rotation speed ω1.

Next, the operation instruction unit 102 waits until the second set time ts2 has elapsed since the workpiece W started to rotate at the rotation speed ω2 (step S17). As a result, the workpiece W rotates at the rotation speed ω2 during the second set time ts2. The second set time ts2 is set to a time that allows the processing liquid supplied to the surface Wa of the workpiece W to be sufficiently concentrated at the center of the workpiece W, and is included in the control conditions. The second set time ts2 may be different from the first set time ts1, or may be the same. As an example, the second set time ts2 is about 1/15 to 5 times the length of the first set time ts1. The processing of steps S16 and S17 corresponds to the reflow processing included in the coating processing. The coating processing includes the discharge processing of steps S12 to S15 and the reflow processing of steps S16 and S17.

After the second set time ts2 has elapsed, the operation instruction unit 102 changes the rotation speed of the workpiece W (step S18). For example, as shown in FIG. 6, the operation instruction unit 102 controls the rotation drive unit 24 to accelerate the rotation of the workpiece W from the rotation speed ω2 to the rotation speed ω3 (second rotation speed). The rotation speed ω3 is included in the control conditions and may be the same as the rotation speed ω1 or may be different. As an example, the rotation speed ω3 is about 0.2 to 2 times the rotation speed ω1. Note that the rotation speed ω3 may be the same as the rotation speed ω2 or may be lower than the rotation speed ω2, unlike the example shown in FIG. 6.

Next, the operation instruction unit 102 waits until the third set time ts3 has elapsed since the workpiece W started to rotate at the rotation speed ω3 (step S19). As a result, the workpiece W rotates at the rotation speed ω3 during the third set time ts3. The third set time ts3 is set to a time at which a coating of the processing liquid supplied to the workpiece W is formed on the surface Wa, and is included in the control conditions. The third set time ts3 may be different from or the same as the first set time ts1 (second set time ts2). As an example, the third set time ts3 is about 5 to 60 times as long as the first set time ts1. The processing of steps S18 and S19 corresponds to a drying process.

When the third set time ts3 has elapsed, for example, the operation instruction unit 102 controls the rotation holding unit 20 to stop the rotation of the workpiece W. With the above, a series of liquid treatment methods for the workpiece W to be treated is completed.

[Control conditions]
Here, an example of the control conditions that stipulate the operation of each device during liquid processing and the state of the processing liquid, etc., will be described in detail. When the multiple parameters that constitute the control conditions are changed, the operation of each device controlled by the control device 100 and the state of the processing liquid, etc. also change. Therefore, the change in the multiple parameters affects the film thickness of the processing liquid film obtained by the liquid processing.

Depending on the characteristics, the change in the parameters included in the control conditions may affect the entire coating of the processing liquid, or may affect a part of the coating to be formed locally. In other words, the multiple parameters constituting the control conditions include parameters that affect the distribution of the coating thickness of the processing liquid, and parameters that affect the entire coating thickness of the processing liquid. The distribution of the coating thickness (hereinafter referred to as "film thickness distribution") is a distribution (profile) that indicates the variation of the coating thickness at multiple measurement positions on the workpiece W. The coating thickness of the entire coating is the overall thickness of the coating that is defined without considering the variation (distribution) of the coating thickness at multiple measurement positions, and is indicated by, for example, the average value of the coating thickness at multiple measurement positions.

The parameters that affect the film thickness distribution are, among the control conditions, parameters that determine the conditions of the liquid treatment before the workpiece W starts to rotate at the rotation speed ω3 in the drying process. It is considered that the coating on the surface of the workpiece W is not sufficiently fixed before the workpiece W starts to rotate at the rotation speed ω3 in the drying process. Therefore, the parameters that control the treatment conditions at this stage may affect the film thickness distribution. On the other hand, since the movement of the coating is restricted by the drying of the coating in the drying process, it is considered that the parameters that determine the conditions of the liquid treatment after the workpiece W starts to rotate at the rotation speed ω3 in the drying process may affect the film thickness of the entire coating.

The parameters that affect the film thickness distribution include parameters that determine the conditions in the discharge process of the coating process and parameters that determine the conditions in the reflow process of the coating process. Examples of parameters in the discharge process include the rotation speed ω1, the first set time ts1 related to the discharge time of the processing liquid, the discharge speed of the processing liquid from the nozzle 32, the temperature of the discharged processing liquid, and the temperature of the workpiece W at the start of discharge of the processing liquid. Examples of parameters that determine the conditions in the reflow process include the rotation speed ω2 and the second set time ts2 that determines the time to rotate at the rotation speed ω2. Other examples of parameters in the coating process that affect the film thickness distribution include the temperature and humidity of the space in the cup surrounding the periphery of the workpiece W on the holding part 22. The rotation speed ω3 in the drying process is an example of a parameter that affects the film thickness of the entire coating.

[Adjustment of control conditions]
In the substrate processing system 1, before the above-mentioned liquid processing is performed, the control conditions are adjusted, more specifically, a plurality of parameters included in the control conditions are adjusted. That is, in the substrate processing system 1, a process for adjusting the control conditions (hereinafter referred to as an "adjustment process") is performed, and then the liquid processing (hereinafter referred to as a "main process") for the workpiece W is performed according to the adjusted control conditions. Before the adjustment process is performed, the condition storage unit 104 stores information specifying a target film thickness distribution for the coating of the processing liquid (hereinafter referred to as a "target film thickness distribution") and condition information in which a plurality of parameters are set to initial values (hereinafter referred to as a "reference condition"). The target film thickness distribution and the reference condition are set in advance according to, for example, input information from an operator or the like.

The initial values of each parameter set under the standard conditions are theoretical values (calculated values) set by simulation or the like so as to obtain a target film thickness distribution. Even if the liquid processing is performed under the standard conditions, the actual film thickness distribution is often not the same as the target film thickness distribution due to individual differences in the device performing the liquid processing and the surrounding environment during the liquid processing. For this reason, in the substrate processing system 1, a coating having a film thickness closer to the target film thickness distribution is formed by setting control conditions by adjusting multiple parameters under the standard conditions. In the following, a method of adjusting the control conditions to bring the film thickness distribution closer to the target film thickness distribution will be described. For this reason, unless otherwise specified, "parameter" means a parameter that affects the film thickness distribution.

First, the condition adjustment unit 110 of the control device 100 that executes the adjustment process will be described in detail. The condition adjustment unit 110 adjusts at least one parameter of the reference conditions based on the film thickness distribution of the coating obtained by performing the adjustment process according to the reference conditions (hereinafter referred to as the "initial reference distribution") and the target film thickness distribution. For example, the condition adjustment unit 110 adjusts at least one parameter based on the difference between the initial reference distribution of the coating obtained under the reference conditions and the target film thickness distribution so that the film thickness distribution, which is the processing result of the liquid processing, approaches the target film thickness distribution. As an example, the target film thickness distribution is set so that the film thickness distribution is flat. In other words, the target value of the film thickness at multiple measurement positions on the workpiece W is set to a constant value so that the film thickness is constant within the workpiece W surface.

The condition adjustment unit 110 adjusts at least one parameter that defines the liquid treatment condition prior to the start of rotation of the workpiece W at the rotation speed ω3 of the drying process among the reference conditions. The condition adjustment unit 110 adjusts at least one parameter selected from the group consisting of, for example, the rotation speed ω1, the discharge time of the treatment liquid (first set time ts1), the discharge speed of the treatment liquid, the temperature of the workpiece W at the start of discharge of the treatment liquid, and the temperature of the treatment liquid. Alternatively, the condition adjustment unit 110 adjusts at least one parameter selected from the group consisting of the above group, the rotation speed ω2, and the second set time ts2 for rotating the workpiece W at the rotation speed ω2. The condition adjustment unit 110 may adjust the temperature of the workpiece W at the start of discharge of the treatment liquid in the coating process by adjusting the target temperature in the substrate temperature adjustment process.

As shown in FIG. 7, the condition adjustment unit 110 includes, as functional modules, for example, a data acquisition unit 112, an estimated information generation unit 114, an estimated information storage unit 116, an adjustment amount calculation unit 118, and a condition change unit 122.

The data acquisition unit 112 is configured to acquire a film thickness distribution of the coating formed on the workpiece W based on the film thickness information from the film thickness measurement unit 18. The data acquisition unit 112 acquires the film thickness at each of a plurality of measurement positions on the workpiece W based on, for example, the film thickness information.

The estimated information generating unit 114 is configured to generate estimated information indicating an estimated value of the film thickness distribution when the liquid processing conditions are changed. The estimated information is, for example, information that associates changes in each of a plurality of parameters included in the control conditions with an estimated value of the film thickness distribution. The estimated information may be information indicating an estimated value of a change amount of the film thickness distribution (an increase or decrease amount of the film thickness at each measurement position) when any one of the plurality of parameters is changed.

The adjustment amount calculation unit 118 is configured to calculate an adjustment amount of one or more parameters to be adjusted among the multiple parameters. The adjustment amount calculation unit 118 calculates an adjustment amount of the parameter to be adjusted (adjustment target parameter) based on, for example, the estimated information stored in the estimated information storage unit 116. When calculating the adjustment amount, the adjustment amount calculation unit 118 selects the parameter to be adjusted from the multiple parameters by, for example, comparing a prediction of a film thickness distribution of the coating based on the estimated information when one or more parameters are changed with a target film thickness distribution.

The condition change unit 122 is configured to set the control conditions by changing the reference conditions stored in the condition storage unit 104. The condition change unit 122 may change the setting value of at least one parameter of the reference conditions according to the adjustment amount of the parameter to be adjusted calculated by the adjustment amount calculation unit 118. By changing at least one parameter of the reference conditions, the control conditions used in this process are obtained.

Next, an example of a substrate processing method including an adjustment process will be described with reference to Fig. 8 to Fig. 15. As shown in Fig. 8, in the adjustment process, the control device 100 first generates estimation information (step S31). An example of the process of generating the estimation information will be described later.

Next, the control device 100 adjusts at least one parameter of the reference conditions in an adjustment process (step S32). The condition adjustment unit 110 changes the value of the parameter to be adjusted among the reference conditions, for example, based on the estimated information obtained in step S31. An example of the parameter adjustment process will be described later.

Next, the control device 100 executes the main process (step S33). The operation instruction unit 102 executes substrate processing (main process) including liquid processing on the workpiece W to be processed according to the control conditions obtained by adjusting the reference conditions in step S32. The operation instruction unit 102 may execute liquid processing on the workpiece W by the processing module 12, similar to steps S11 to S19 illustrated in FIG. 5. The operation instruction unit 102 may repeat the process of step S33 on a predetermined number of workpieces W to be processed, or may continue the process of step S33 on the workpiece W to be processed for a predetermined period of time.

(Estimated Information Generation Process)
In the process of generating the estimated information in step S31, as shown in Fig. 9, the control device 100 executes the liquid processing under the measurement conditions (step S41). The measurement conditions define various operations of the liquid processing executed to generate the estimated information. The initial values of the measurement conditions can be the same as the various parameters included in the reference conditions. The control device 100 controls the transport device A3 to transport the workpiece W that has been subjected to the liquid processing under the measurement conditions from the coating unit U1 to the film thickness measurement section 18. The workpiece W used here can be the same as the workpiece W used in this process.

Next, the control device 100 measures the thickness distribution of the coating formed by the liquid processing performed in step S41 (step S42). The data acquisition unit 112 acquires the thickness distribution along a measurement line L perpendicular to a line passing through a reference position (e.g., the position of the notch N) and a center CP in the circumferential direction of the circular workpiece W, as shown in FIG. 10, based on the thickness information from the thickness measurement unit 18. The data acquisition unit 112 may acquire the thickness distribution along the measurement line L by measuring the thickness at a plurality of measurement positions P set on the measurement line L. The plurality of measurement positions P may include the center CP of the workpiece W, or may be set to be arranged at equal intervals on the measurement line L. The measurement line L may be set so as not to pass through the center CP.

Next, the control device 100 judges whether or not all the liquid processes in the change stages have been completed for the parameter to be changed (step S43). The control device 100 changes one of the multiple parameters under the reference condition in multiple stages, and causes the processing module 12 to execute multiple liquid processes (liquid processes for adjustment). The control device 100 fixes parameters other than the parameter to be changed to initial values (values set under the reference condition). The number of stages in which the one parameter is changed, the change range, and the set value at each stage are predetermined, for example, by an operator. In step S43, the estimated information generating unit 114 judges whether or not all the liquid processes in the predetermined change stages have been completed.

If it is determined in step S43 that all of the liquid processes in the change stages have not been completed (step S43: NO), the control device 100 changes the set values of the parameters to be changed (step S44). In other words, the control device 100 changes the measurement conditions. The control device 100 then repeats the processes of steps S41 to S43. By repeatedly executing the above steps S41 to S43, the control device 100 executes the liquid process by changing one of the multiple parameters in multiple stages, and obtains an actual measurement value (first actual measurement value) of the film thickness distribution of the coating for each change stage.

The graph in FIG. 11 shows an example of the result of acquiring the actual measurement value (first actual measurement value) of the film thickness distribution when the parameter to be changed in multiple stages is the rotation speed ω1. The horizontal axis in FIG. 11 indicates the measurement position of the film thickness, and the measurement position is shown by combining a value corresponding to the distance from the center CP of the workpiece W and a positive or negative value according to the direction relative to the center CP. In the example shown in FIG. 11, the control device 100 changes the target parameter to five stages including the rotation speed ω1r [rpm] which is the initial value of the rotation speed ω1, and the rotation speeds obtained by adding 500 rpm, 1000 rpm, -500 rpm, and -1000 rpm to the rotation speed ω1r. That is, the estimated information generating unit 114 acquires the actual measurement value of the film thickness distribution in five stages. Note that the control device 100 fixes the multiple parameters other than the rotation speed ω1 to the initial value, changes the rotation speed ω1 (including ω1r) to five stages, and acquires the film thickness distribution for each stage. The number of stages in which the parameter is changed is not limited to 5, and may be less than 5 or more than 5. By increasing the number of stages in which the parameter is changed, the change in the film thickness distribution due to the change in the parameter can be grasped in more detail.

In step S43, when it is determined that all the liquid processes in the changing stages have been completed (step S43: YES), the control device 100 generates multiple regression equations for the changed parameters (step S45). The estimated information generating unit 114 generates a regression equation indicating an estimated value of the film thickness according to the changed parameters for each of the multiple measurement positions P along the measurement line L, for example. The estimated information generating unit 114 generates a regression equation for each measurement position P based on multiple actual measurement values of the film thickness distribution obtained by repeating steps S41 to S43, for example. As an example, the estimated information generating unit 114 generates a regression equation for each measurement position P by calculating an approximation line (approximation line or approximation curve) based on multiple actual measurement values of the film thickness at each measurement position P. The degree of the approximation line (regression equation) may be first order (straight line approximation) or may be second order or higher.

In the graph of FIG. 12, the actual measurement values obtained under each measurement condition when the parameter to be changed is the rotation speed ω1 are plotted. The graph of FIG. 12 shows the actual measurement values obtained by changing the rotation speed ω1 in six steps. In FIG. 12, the actual measurement values of the film thickness at the measurement positions P of 0 mm, 60 mm, 90 mm, 120 mm, 133 mm, 145 mm, and 148 mm are shown as examples of the actual measurement values. In the example shown in FIG. 12, when the rotation speed ω1 is in the range of (ω1r-1000) rpm to (ω1r+1500) rpm, the estimated information generating unit 114 calculates an approximation formula based on the six-step actual measurement values for each measurement position P to generate a regression formula. Note that, for convenience of explanation, the actual measurement values at seven locations are shown, but the number of multiple measurement positions for generating a regression formula is not limited to seven, and may be more than seven or less than seven. For example, the number of measurement positions in the peripheral area where the film thickness varies more may be greater than the number of measurement positions in the central area where the film thickness varies less. Note that, although Fig. 12 shows actual measurements only for the measurement positions P indicated by positive values, the same process is performed for the measurement positions P indicated by negative values.

Next, the control device 100 calculates an estimate of the film thickness distribution between the measurement conditions for actual measurement based on the multiple regression equations (step S46). As described above, the actual measurement value of the film thickness distribution is not obtained for conditions other than the multiple stages for changing the parameter (conditions other than the measurement conditions). Therefore, the estimated information generating unit 114 calculates an estimate of the film thickness distribution between the multiple stages for changing the parameter according to the film thickness values at the multiple measurement positions indicated by the multiple regression equations. A set of film thickness values indicated by each of the multiple regression equations when the parameter is one value indicates an estimate of the film thickness distribution when the parameter is set to that value. The estimated information generating unit 114 may calculate an estimate of the amount of change in the film thickness distribution (the amount of increase or decrease in the film thickness at each measurement position P) when one parameter is changed by calculating the difference between the estimated value of the film thickness distribution obtained by executing steps S45 and S46 and the actual measurement value of the film thickness distribution at the initial value of the reference condition.

The range and interval for calculating the estimated value of the film thickness distribution are set in advance by, for example, an operator. For example, the estimated information generating unit 114 changes the parameter changed to obtain the measurement conditions by a predetermined width, and obtains the estimated value of the film thickness distribution at each of a plurality of values. The predetermined width may be smaller than the width by which the parameter to be changed is changed to obtain the actual measured value. As an example, when the parameter changed to obtain the measurement conditions is the rotation speed, the estimated information generating unit 114 calculates the estimated value of the film thickness distribution every 10 rpm, 50 rpm, or 100 rpm. When the parameter to be changed is the temperature, the estimated information generating unit 114 calculates the prediction of the film thickness distribution every 0.5° C. or 1° C.

The graph in Fig. 13 shows an example of an estimated value of the film thickness distribution based on a plurality of regression equations. Fig. 13 shows an estimated value of the film thickness distribution at a rotation speed ω1r reduced by 100 rpm from the rotation speed ω1r in addition to an actual measured value of the film thickness distribution at a rotation speed reduced by 500 rpm from the rotation speed ω1r. This estimated value of the film thickness distribution can be obtained from the estimated values of the film thickness (estimated values of the film thickness at a plurality of measurement positions) indicated by each of the plurality of regression equations at a rotation speed reduced by 100 rpm from the rotation speed ω1r, as shown in Fig. 12.

Next, the control device 100 judges whether the regression equations have been generated and the estimated values have been calculated for all of the multiple parameters (step S47). The estimated information generating unit 114, for example, sequentially changes the multiple parameters of the reference condition in multiple stages as parameters to be changed, and generates the regression equations and calculates the estimated values. In step S47, if it is determined that the regression equations have not been generated and the estimated values have not been calculated for all of the multiple parameters (step S47: NO), the control device 100 changes the parameter to be changed to another parameter. Then, the control device 100 (estimated information generating unit 114) repeats the processes of steps S41 to S47 for the changed parameter. Note that, when changing the parameters and repeating the same process, the step S41 may be omitted from obtaining the film thickness distribution of the coating using the various parameters included in the reference condition as the measurement conditions, and the film thickness distribution (initial reference distribution) of the coating along the measurement line L under the same conditions used in generating the estimated information related to the other parameters may be used.

On the other hand, when it is determined in step S47 that the regression equations for all the multiple parameters have been generated and the estimated values have been calculated (step S47: YES), the control device 100 ends the series of processes for generating estimated information. As a result, the estimated information storage unit 116 generates estimated information that associates the changes in each of the multiple parameters included in the control conditions with estimated values of the film thickness distribution of the coating. Note that the estimated information storage unit 116 may generate estimated information indicating an estimated value of the amount of change (the amount of increase or decrease in film thickness at each measurement position) from the film thickness distribution obtained under the measurement conditions of the initial value when any of the multiple parameters is changed.

(Parameter Adjustment Processing)
In the parameter adjustment process of step S32, as shown in FIG. 14, the control device 100 executes the liquid processing under the reference conditions (control conditions set to the initial values) stored in the condition storage unit 104 (step S51). Next, the control device 100 measures the film thickness distribution of the coating obtained by the liquid processing executed under the reference conditions (step S52). The data acquisition unit 112 acquires the film thickness distribution of the coating along the measurement line L (initial reference distribution), for example, as in step S41. Note that steps S51 and S52 may be omitted, and the film thickness distribution of the coating along the measurement line L acquired under the same measurement conditions as the reference conditions may be used, from among the film thickness distributions of the coating acquired in step S41 (initial reference distribution).

Next, the control device 100 extracts candidate conditions that are candidates for conditions that can be used for adjustment to bring the film thickness distribution closer to the target film thickness distribution, based on the film thickness distribution of the coating under the reference conditions and the estimation information (step S53). The adjustment amount calculation unit 118, for example, calculates a predicted value of the film thickness distribution when multiple parameters are changed within a change range included in the estimation information, based on the estimation information. The adjustment amount calculation unit 118, for example, calculates a predicted film thickness distribution indicating a prediction of the film thickness distribution by adding a fluctuation value of the film thickness distribution indicated by the estimation information to an initial reference distribution. The adjustment amount calculation unit 118 may extract one or more candidate conditions in which the difference between the predicted film thickness distribution and the target film thickness distribution is smaller than a predetermined value (for example, a value that is acceptable as a fluctuation range of the film thickness distribution). The difference between the predicted film thickness distribution and the target film thickness distribution is indicated, for example, by an average of the differences between the film thicknesses at each of the multiple measurement positions P.

As an example, the adjustment amount calculation unit 118 may calculate a plurality of predicted film thickness distributions for all conditions obtained by changing two parameters among the plurality of parameters within a preset change range and change width. At this time, parameters other than the two parameters are fixed to initial values. Then, the adjustment amount calculation unit 118 may change the combination of the two parameters and calculate a plurality of predicted film thickness distributions in the same manner. The adjustment amount calculation unit 118 may calculate a plurality of predicted film thicknesses for each of all combinations of two parameters included in the plurality of parameters. The adjustment amount calculation unit 118 may extract two parameters for which the difference between the predicted film thickness distribution and the target film thickness distribution is smaller than a predetermined value as candidate conditions. Note that the adjustment amount calculation unit 118 may calculate a plurality of predicted film thickness distributions for some combinations of two parameters, or may calculate a plurality of predicted film thickness distributions for each combination of three or more parameters (for example, all parameters) among the plurality of parameters.

Next, the control device 100 judges whether or not a plurality of candidate conditions are extracted as a result of extracting the candidate conditions by the above-mentioned method or the like (step S54). If it is judged that a plurality of candidate conditions are extracted (step S54: YES), the control device 100 narrows down the plurality of candidate conditions to one candidate condition based on a predetermined narrowing-down condition (step S55). The adjustment amount calculation unit 118 narrows down the plurality of candidate conditions to one candidate condition based on, for example, a priority order previously set for a plurality of parameters. As an example, the adjustment amount calculation unit 118 may select one candidate condition having a high priority order for a parameter to be adjusted included in the plurality of candidate conditions. The priority order may be set in advance by an operator, taking into consideration the ease of adjusting the conditions when performing the liquid processing, etc. Also, one candidate condition that can realize a state closer to the target film thickness distribution may be selected from the plurality of candidate conditions.

If it is determined that a single candidate condition is extracted (step S54: NO), the adjustment amount calculation unit 118 does not execute step S55. The adjustment amount calculation unit 118 selects the narrowed-down candidate condition or one or more parameters (e.g., two parameters) included in the single candidate condition as parameters to be adjusted. As a result, a parameter to be adjusted that brings the predicted film thickness distribution based on the estimation information closer to the target film thickness distribution is selected from the multiple parameters.

FIG. 15 shows a schematic example of the result of selecting the parameters to be adjusted. In FIG. 15, the initial film thickness distribution is indicated by "Ft0", multiple parameters are indicated by "h1" to "h6", and the predicted film thickness distribution is indicated by "Ft1". In addition, the film thickness is indicated by "th", the amount of change in film thickness is indicated by "Δth", and the measurement position is indicated by "P". The adjustment amount calculation unit 118 repeatedly calculates multiple predicted film thickness distributions Ft1 for multiple conditions in which two parameters among the parameters h1 to h6 are changed for the initial film thickness distribution Ft0, while changing the combination of the two parameters. The adjustment amount calculation unit 118 selects two parameters for which the difference between the predicted film thickness distribution Ft1 and the initial film thickness distribution Ft0 is below a predetermined value as the parameters to be adjusted. In the example shown in FIG. 15, when the parameters h1 and h6 are changed and the parameters h2 to h5 are maintained at their initial values, a predicted film thickness distribution Ft1 in which the difference is below a predetermined value is obtained. That is, the parameters h1 and h6 are selected as the parameters to be adjusted.

Among the multiple parameters, there may be a pair of parameters in which the estimated values (variation amounts of film thickness) of the coating film thickness distribution included in the estimation information cancel each other out. The relationship in which the estimated values cancel each other out means that when each of the pair of parameters is changed, the estimated values (variation amounts of film thickness) of the film thickness distribution for each measurement position P (radial position of the workpiece W) tend to increase or decrease in opposite directions. When adjustment is performed using both of these pair of parameters, the characteristic changes in the variation amounts of film thickness in each parameter are canceled out at most of the measurement positions P, and as a result, it is considered that the variation amounts of film thickness approach approximately constant regardless of the measurement position P.

In this way, when adjustment is performed using both of a pair of parameters, the relationship in which the amount of film thickness variation approaches a constant amount at most of the measurement positions P compared to the amount of film thickness variation estimated from each parameter is referred to as a "relationship in which the estimated values of the film thickness distribution included in the estimated information cancel each other out." Hereinafter, a pair of parameters having a relationship in which the estimated values cancel each other out will be referred to as "anti-correlated parameters." For example, one or more sets of anti-correlated parameters may be preset (specified) from among multiple parameters by an operator. In the above example, a combination of parameters h1 and h4 may be preset as anti-correlated parameters.

In one example of step S53 described above, the adjustment amount calculation unit 118 calculates multiple predicted film thickness distributions for each of all combinations of two or more parameters to be changed when calculating multiple predicted film thickness distributions. Alternatively, when an anti-correlation parameter is set in advance, the adjustment amount calculation unit 118 may calculate multiple predicted film thickness distributions by excluding combinations in which the two or more parameters include both anti-correlation parameters from combinations of two or more parameters to be changed. In this case, both anti-correlation parameters are not included in the candidate conditions in which the difference between the predicted film thickness distribution and the target film thickness distribution is smaller than a predetermined value. Alternatively, instead of or in addition to the above-mentioned priority order as a criterion for selecting parameters, the relationship between the film thickness variation distributions of the two parameters may be considered. In this case, the adjustment amount calculation unit 118 may exclude candidate conditions that include both anti-correlation parameters.

For example, if the anti-correlation parameter is not set in advance, not only the combination of parameters h5 and h6 but also the combination of parameters h1, h4, h5, and h6 can be a candidate condition. However, the parameters h1 and h4 in the combination of parameters h1, h4, h5, and h6 have a relationship in which the estimated values cancel each other out, so that they do not substantially contribute to the adjustment of the film thickness distribution. In contrast, by setting the anti-correlation parameter in advance, it is possible to remove from the candidate conditions combinations including parameters that do not affect the variation of the film thickness distribution as a result. As described above, when selecting a parameter to be adjusted from among a plurality of parameters so that the predicted film thickness distribution approaches the target film thickness distribution, the selection of parameters may be performed so that both of the pair of anti-correlation parameters are not included in the parameters to be adjusted.

An example of an anti-correlated parameter in which the estimated values of the coating thickness distribution (amount of variation in the thickness) cancel each other out is a pair of parameters whose thickness variation distribution has a vertically symmetrical relationship. In the example of FIG. 15, parameters h1 and h6 are selected, but one of the reasons for selecting parameters h1 and h6 is that the thickness variation distributions of both parameters (models in which the horizontal axis is the radial position of the workpiece W and the vertical axis is the amount of variation in the thickness) are not vertically symmetrical to each other. The vertical axis (amount of variation in the thickness) in the vertical symmetry refers to the vertical axis. Here, an example will be described in which parameters h1 and h4 whose thickness variation distributions have a roughly vertically symmetrical relationship are selected. With parameter h1, the variation in the outer periphery is larger than that in the center in the radial direction, and with parameter h4, the variation in the center is larger than that in the outer periphery. Therefore, when parameters h1 and h4 are changed, the areas that contribute more to the thickness variation and the areas that contribute less to the thickness variation are reversed. As a result, it becomes difficult to adjust the local thickness in the workpiece W, and the controllability of the thickness distribution in the entire surface is reduced.

In contrast, the film thickness variation distributions of the parameters h1 and h6 are not vertically symmetrical to each other, nor are they the same (having similar shapes) profile, and the distribution of the film thickness variation amount from the center to the outer periphery is different. In this case, it is possible to adjust the film thickness locally so that the film thickness is changed more in the center than in the outer periphery, or the film thickness is changed more in the outer periphery than in the center, improving the controllability of the film thickness distribution over the entire surface of the workpiece W.

Here, the combination of parameters h1 and h6 has been described as an example, but other combinations that can be selected may be, for example, the combination of parameters h1 and h3, the combination of parameters h3 and h4, or the combination of parameters h5 and h6. Whether the film thickness variation distributions of two parameters have a vertically symmetrical relationship can also be rephrased as whether the slope (tendency) of the film thickness variation amount from the center to the outer periphery has a similar relationship. In other words, when the film thickness variation distributions have a vertically symmetrical relationship, the directions of the fluctuations are opposite, but the film thickness variation amounts increase and decrease in the same way. When the film thickness variation distributions have a vertically asymmetrical relationship, the film thickness variation amount changes so that the slopes (tendencies) of the film thickness variation amount from the center to the outer periphery are different from each other.

Returning to the flowchart of FIG. 14, after executing step S54 or step S55, the control device 100 calculates the adjustment amount of the parameter from the reference condition (step S56). The adjustment amount calculation unit 118 calculates, for example, the difference between the value of the parameter to be adjusted when the difference between the predicted film thickness distribution and the target film thickness distribution falls below a predetermined value and the initial value as the adjustment amount. Then, the control device 100 adjusts the parameter to be adjusted among the reference conditions stored in the condition storage unit 104 by the adjustment amount obtained in step S56 (step S57). That is, the control device 100 (condition adjustment unit 110) sets the control condition by adjusting the reference condition. Note that the process corresponding to step S56 may be configured to be performed when extracting the candidate condition (step S53). That is, when the predicted film thickness distribution is calculated while changing the parameter when extracting the candidate condition, the adjustment amount may be determined based on the value of the parameter when the predicted film thickness distribution approaches the target film thickness distribution.

Next, the control device 100 performs verification of the control conditions set in step S57 (step S58). For example, the control device 100 performs liquid processing by the processing module 12 according to the control conditions set in step S57, and obtains the film thickness distribution (actual film thickness distribution) of the coating obtained by the liquid processing. The control device 100 may determine whether the estimated information (regression equation) generated in step S31 is valid by comparing the predicted film thickness distribution calculated when selecting the parameters to be adjusted with the actual film thickness distribution. The control device 100 may determine that the estimated information is valid, for example, when the difference between the predicted film thickness distribution and the actual film thickness distribution is smaller than a predetermined value. The control device 100 may determine that the estimated information is invalid when the difference is larger than a predetermined value, and the control device 100 may adjust the parameters using other candidate conditions, or may perform the processes of steps S41 to S47 again by changing the method of generating the regression equation. The control device 100 may also correct the regression equation calculated in step S31 using the actual film thickness distribution obtained in step S58. In this manner, the control device 100 completes a series of parameter adjustment processes. Note that, although it is possible to evaluate whether the adjustment of the control conditions is appropriate by performing step S58, this procedure may not be performed.

[Effects of the embodiment]
The substrate processing method of the above example includes performing a liquid processing including a coating process including discharging a processing liquid toward the surface Wa of the workpiece W while rotating the workpiece W at a rotation speed ω1, and a drying process including rotating the workpiece W at a rotation speed ω3 after the coating process to dry the coating of the processing liquid on the surface Wa of the workpiece W according to a predetermined standard condition, based on a film thickness distribution of the coating obtained by performing the liquid processing according to a predetermined target film thickness distribution of the coating, and adjusting at least one parameter that defines the liquid processing condition before the start of rotation of the workpiece W at the rotation speed ω3 of the drying process among the standard conditions, and performing the liquid processing on the workpiece W according to a control condition obtained by adjusting at least one parameter among the standard conditions. It is considered that the liquid processing condition before the start of rotation of the workpiece W at the rotation speed ω3 of the drying process has a large effect on the film thickness distribution, which is the result of the liquid processing. In the above method, the parameter that defines the liquid processing condition before the start of rotation of the workpiece W at the rotation speed ω3 of the drying process is adjusted, so that the result of the liquid processing can be easily brought close to the target processing result.

In the substrate processing method of the above example, the coating process may further include rotating the workpiece W at a rotation speed ω3 different from the rotation speed ω2 after the discharge of the processing liquid is completed. It is considered that the conditions of the rotation of the workpiece W performed after the discharge of the processing liquid is completed also have a large effect on the film thickness distribution. When adjusting the parameters related to the rotation of the workpiece W after the discharge is completed, it becomes possible to easily adjust the conditions.

In the substrate processing method of the above example, adjusting at least one parameter may include adjusting at least one selected from the group consisting of the rotation speed ω1, the discharge time of the processing liquid, the discharge speed of the processing liquid, the rotation speed ω2, the time for rotating the workpiece W at the rotation speed ω2, the temperature of the workpiece W at the start of discharging the processing liquid, and the temperature of the processing liquid. Since the film thickness distribution fluctuates when any one of the multiple parameters included in the above group changes, it is possible to adjust the film thickness distribution of the execution result to approach the target film thickness distribution.

In the substrate processing method of the above example, the liquid processing may further include a substrate temperature adjustment process for adjusting the temperature of the workpiece W before the coating process. Adjusting at least one parameter may include adjusting the temperature of the workpiece W at the start of ejection of the processing liquid. Adjusting the temperature of the workpiece W at the start of ejection of the processing liquid may include adjusting a target temperature in the substrate temperature adjustment process. In this case, the temperature of the workpiece W at the start of ejection can be adjusted in the substrate temperature adjustment process. Therefore, when adjusting the temperature of the workpiece W at the start of ejection, it is easy to adjust the conditions.

In the substrate processing method of the above example, adjusting at least one parameter may include generating estimated information in which changes in each of the multiple parameters constituting the reference conditions correspond to an estimated value of the film thickness distribution of the coating, and calculating an adjustment amount of the at least one parameter based on the estimated information. In this case, the influence of changes in the liquid processing conditions on the film thickness distribution is quantitatively indicated based on the estimated information. Therefore, it is possible to adjust the liquid processing conditions so that the film thickness distribution obtained by performing the liquid processing approaches the target film thickness distribution without relying on the skill or experience of an operator or the like.

As a method of adjusting the conditions, an operator may check the film thickness distribution obtained according to the reference conditions, and adjust the parameters (set the control conditions) by repeating trial and error of changing the parameters and checking the actual values based on his/her past experience or intuition (skill). In this case, the adjustment of the parameters requires the operator's skill, and even an experienced operator may need to repeat trial and error, which may take time for the adjustment process. On the other hand, in the above substrate processing method, the influence of changing the liquid processing conditions on the film thickness distribution is quantitatively shown based on the estimated information. Therefore, even an operator who is not experienced can adjust the parameters, and since there is no need to repeat many trial and error, it is possible to shorten the time required for the adjustment process. Therefore, by adjusting the parameters using the estimated information, it is easy to bring the liquid processing result closer to the target processing result.

In addition, adjusting parameters using the estimated information to bring the execution result of the liquid processing closer to the target processing result is also effective even if the liquid processing is a process other than the process for forming a resist film. For example, adjusting parameters using the estimated information may be applied to a liquid processing including a development process performed in the processing module 14 (liquid processing unit). In this case, parameters that determine the conditions of the liquid processing including the development process may be adjusted so that the line width of the pattern formed on the surface Wa of the workpiece W approaches the target line width. The estimated information may be information that associates a change in a parameter that determines the conditions of the liquid processing including the development process with a predicted value of the line width.

In the substrate processing method of the above example, calculating the adjustment amount of at least one parameter may include selecting, from among the multiple parameters, a parameter to be adjusted that brings the predicted thickness distribution of the coating film based on the estimation information closer to the target thickness distribution, and calculating the adjustment amount of at least one parameter according to the value of the parameter to be adjusted when the predicted thickness distribution of the coating film approaches the target thickness distribution. In this case, the parameter to be adjusted is selected based on the estimation information, and the adjustment amount is further calculated, so that it is possible to shorten the time required to adjust the liquid processing conditions compared to the case where trial and error is repeated between changing the parameter and checking the actual measured value.

In the substrate processing method of the above example, the multiple parameters may have a predetermined priority. Selecting the parameter to be adjusted from the multiple parameters may include selecting the parameter to be adjusted based on the priority as well. In this case, the parameter to be adjusted is selected based on the priority as well, which makes it easier to adjust the liquid processing conditions.

In the substrate processing method of the above example, the plurality of parameters may include a pair of anti-correlated parameters having a relationship in which estimated values of the thickness distribution of the coating based on the estimation information cancel each other out. Selecting the adjustment target parameter from the plurality of parameters may include selecting the adjustment target parameter from the plurality of parameters such that both of the pair of anti-correlated parameters are not included in the adjustment target parameters. In this case, it is possible to reduce the possibility that the number of parameters to be adjusted becomes larger than necessary, and therefore it is possible to easily adjust the parameters.

In the substrate processing method of the above example, generating the estimated information may include performing the liquid processing while changing one of the multiple parameters in multiple stages, obtaining actual measurements of the thickness distribution of the coating for each stage of the change, and generating multiple regression equations that indicate the change in thickness of the coating according to the one parameter for multiple positions on the substrate based on the actual measurements. In this case, the multiple regression equations make it possible to obtain predicted values of the thickness of the coating even for the values of parameters for which actual measurements have not been obtained.

The substrate processing system 1 of the above example includes a processing module 12 that performs liquid processing including a coating process including discharging a processing liquid toward the surface Wa of the workpiece W while rotating the workpiece W at a rotation speed ω1, and a drying process including drying a coating of the processing liquid on the surface Wa of the workpiece W by rotating the workpiece W at a rotation speed ω3 after the coating process, and a control device 100 that controls the processing module 12. The control device 100 adjusts at least one parameter that defines the liquid processing condition before the start of rotation of the workpiece W at the rotation speed ω3 of the drying process among the standard conditions based on a film thickness distribution of the coating obtained by having the processing module 12 perform the liquid processing according to a predetermined standard condition and a predetermined target film thickness distribution of the coating, and performs liquid processing on the workpiece W by the processing module 12 according to a control condition obtained by adjusting at least one parameter among the standard conditions. In this system, as in the above-mentioned substrate processing method, it is possible to easily bring the execution result of the liquid processing closer to the target processing result.

[Modification]
The regression equation generated in the above example is generated without considering the influence between parameters. Depending on the combination of parameters, the amount of change in film thickness when one parameter is changed may differ depending on one parameter. Therefore, instead of the regression equation described above, the estimated information generating unit 114 may generate multiple model equations that take into account the influence (interaction) between two parameters. Below, a case will be described in which a model equation is generated taking into account the interaction between two parameters to create estimated information.

The control device 100 executes the liquid processing under conditions in which, for example, two parameters whose mutual influence should be considered are changed in multiple stages. The control device 100 (estimated information generating unit 114) then acquires actual measurement values (second actual measurement values) of the film thickness distribution of the coating by the liquid processing executed under the measurement conditions for each combination of the change stages. The estimated information generating unit 114 generates, for multiple measurement positions on the workpiece W, multiple model formulas that include the mutual influence of the two parameters and indicate the change in the film thickness of the coating according to the two parameters, based on the actual measurement values obtained by the liquid processing under the measurement conditions. The estimated information generating unit 114 generates, for example, at each measurement position, a prediction surface that indicates the change in film thickness relative to the two parameters as a model formula, based on the above-mentioned actual measurement values.

The estimated information generating unit 114 may calculate a predicted value of the film thickness between stages in which the two parameters are changed based on a plurality of model formulas. The estimated information generating unit 114 may generate a plurality of model formulas that take into account interactions for some of the plurality of parameters. That is, the estimated information generating unit 114 may generate estimated information based on a plurality of model formulas and a plurality of regression formulas that do not take into account interactions.

In the substrate processing method according to the modified example, generating the estimated information may include performing the liquid processing by changing two of the multiple parameters in multiple stages, acquiring actual measurement values of the film thickness distribution of the coating for each combination of the change stages, and generating multiple model equations for multiple positions on the workpiece W based on the actual measurement values, the model equations including the mutual influence of the two parameters and indicating the change in the film thickness of the coating according to the two parameters. Depending on the combination of parameters, the change in one parameter may affect the change in the film thickness according to the other parameter. In the above configuration, a model equation that takes into account the mutual influence is generated, making it possible to more accurately predict the film thickness.

Here, the difference in the estimated film thickness between the case where the interaction is not taken into account and the case where the interaction is taken into account will be illustrated. Assuming that two parameters h1 and h2 are linearly approximated, the slopes of the respective approximation equations are represented as "b1" and "b2", and the constant is represented as "C", the film thickness th at one measurement position based on the regression equation not taking the interaction into account is expressed by equation (1).
th = b1 x h1 + b2 x h2 + C (1)
On the other hand, the film thickness th at one measurement position based on the model equation taking into account the interaction is expressed by the following equation (2) when the coefficient indicating the mutual influence is represented as "b3".
th = b1 x h1 + b2 x h2 + b3 x h1 x h2 + C (2)

In formula (1), even if the value of one parameter h1 is different, the change width of the film thickness th according to the other parameter h2 is constant. Since formula (2) includes a term including the coefficient b3 including the mutual influence, if the value of one parameter h1 is different, the change width of the film thickness th according to the other parameter h2 is also different. In other words, the model formula shown in formula (2) includes the influence of the interaction between the parameters h1 and h2. Therefore, by calculating a model formula that takes into account the interaction such as formula (2), it is possible to predict the film thickness more accurately depending on the combination of parameters compared to the case where the interaction is not taken into account.

The condition adjustment unit 110 may output the calculation result of the adjustment amount of the adjustment target parameter to a display device. The display device may be capable of displaying the calculation result to an operator. After outputting the calculation result of the adjustment amount, the condition adjustment unit 110 may adjust the reference condition based on input information from the operator (may set a control condition).

The generation of the estimated information in step S31 and the parameter adjustment procedure in step S32 shown in FIG. 8 may be performed for each coating/developing apparatus 2. Alternatively, the processing result (estimated information) of step S31 may be used in common among a plurality of coating/developing apparatuses 2. For example, when an apparatus for obtaining various information used for adjusting the parameters among a plurality of coating/developing apparatuses 2 is set as a "coating/developing apparatus 2A" and an apparatus for adjusting the parameters is set as a "coating/developing apparatus 2B", the estimated information may be generated based on the liquid processing performed under each measurement condition (see FIG. 9) in the coating/developing apparatus 2A. Then, the condition adjustment unit 110 of the coating/developing apparatus 2B may acquire the estimated information generated for the coating/developing apparatus 2A and adjust the parameters (may execute step S02). Note that the coating/developing apparatuses 2A and 2B have the same functions (are the same type of apparatus).

A part of the processing result of step S32 (initial film thickness distribution) may be used in common among a plurality of coating and developing apparatuses 2. For example, an initial film thickness distribution, which is a film thickness distribution of a coating film obtained by performing the process according to the standard conditions in the coating and developing apparatus 2A, may be measured (see FIG. 14). Then, the condition adjustment unit 110 of the coating and developing apparatus 2B may acquire the initial film thickness distribution measured for the coating and developing apparatus 2A and adjust the parameters (steps S53 to S58 may be executed). In this way, the condition adjustment unit 110 of the coating and developing apparatus 2B may adjust the parameters based on the initial film thickness distribution corresponding to the processing result performed according to the standard conditions in the coating and developing apparatus 2B (initial film thickness distribution estimated to obtain the same result in the coating and developing apparatus 2B) and the target film thickness distribution. Note that the condition adjustment unit 110 of the coating and developing apparatus 2B may adjust the parameters by acquiring information on the parameters adjusted for the coating and developing apparatus 2A. One condition adjustment unit 110 may be provided for multiple coating/developing apparatuses 2, including coating/developing apparatuses 2A and 2B, and the condition adjustment unit 110 may adjust parameters for each of the other coating/developing apparatuses 2 based on the adjustment amount of the parameters obtained in one coating/developing apparatus 2.

The above example also includes the following configuration.
(Additional Note)
adjusting at least one parameter that affects a result of the liquid processing on the substrate, among the reference conditions, based on a result of the liquid processing performed on the substrate using a processing liquid under predetermined reference conditions and a predetermined target processing result;
performing the liquid processing on the substrate in accordance with control conditions obtained by adjusting the at least one parameter of the reference conditions;
Adjusting the at least one parameter comprises:
generating estimated information that associates changes in each of a plurality of parameters constituting the reference condition with an estimated value of the liquid processing result;
and calculating an adjustment amount for the at least one parameter based on the estimated information.

Reference Signs List 1: substrate processing system, 2: coating/developing apparatus, 12: processing module, 16: temperature adjustment section, U1: coating unit, 20: rotation holding section, 30: processing liquid supply section, 100: control device, 110: condition adjustment section, W: workpiece.

Claims (11)

a coating process including a coating process, which includes discharging a processing liquid toward a surface of the substrate while rotating the substrate at a first rotation speed, and a drying process, which includes a drying process, which includes rotating the substrate at a second rotation speed after the coating process, to dry a coating of the processing liquid on the surface of the substrate, is performed according to predetermined standard conditions, based on a film thickness distribution of the coating and a predetermined target film thickness distribution of the coating, and on at least one parameter among the standard conditions that defines a condition of the liquid processing at a stage prior to the start of rotation of the substrate at the second rotation speed in the drying process;
and subjecting the substrate to the liquid treatment in accordance with control conditions obtained by adjusting the at least one parameter of the reference conditions;
the thickness distribution of the coating is a distribution indicating a variation in thickness of the coating on the substrate,
Adjusting the at least one parameter comprises:
generating estimated information that associates changes in each of a plurality of parameters constituting the reference condition with an estimated value of a thickness distribution of the coating;
calculating an adjustment amount for the at least one parameter based on the estimated information ;
A substrate processing method , wherein the estimated value of the film thickness distribution of the coating in the estimation information is an estimated value of an amount of increase or decrease in film thickness at each of a plurality of positions on the substrate . The substrate processing method according to claim 1, wherein the coating process further includes rotating the substrate at a third rotation speed different from the first rotation speed after the discharge of the processing liquid is completed. The substrate processing method of claim 2, wherein adjusting the at least one parameter includes adjusting at least one selected from the group consisting of the first rotation speed, the discharge time of the processing liquid, the discharge speed of the processing liquid, the third rotation speed, the time for rotating the substrate at the third rotation speed, the temperature of the substrate at the start of discharging the processing liquid, and the temperature of the processing liquid. The liquid processing further includes a substrate temperature adjustment process for adjusting a temperature of the substrate before the coating process;
adjusting the at least one parameter includes adjusting a temperature of the substrate at a time when the processing liquid starts to be dispensed;
The substrate processing method according to claim 3 , wherein adjusting the temperature of the substrate at the start of discharging the processing liquid includes adjusting a target temperature in the substrate temperature adjustment process. Calculating an adjustment amount of the at least one parameter
selecting, from among the plurality of parameters, a parameter to be adjusted that brings a prediction of a thickness distribution of the coating based on the estimated information closer to the target thickness distribution;
5. The substrate processing method according to claim 1, further comprising: calculating an adjustment amount of the at least one parameter depending on a value of the parameter to be adjusted when approaching the target film thickness distribution. Priorities are predefined for the multiple parameters;
The substrate processing method according to claim 5 , wherein selecting the adjustment target parameter from among the plurality of parameters includes selecting the adjustment target parameter based also on the priority order. the plurality of parameters include a pair of anti-correlated parameters having a relationship in which the estimated values of the thickness distribution of the coating included in the estimation information cancel each other out,
7. The substrate processing method according to claim 5, wherein selecting the parameter to be adjusted from the plurality of parameters includes selecting the parameter to be adjusted from the plurality of parameters such that both of the pair of anti-correlated parameters are not included in the parameters to be adjusted. Generating the estimated information includes:
performing the liquid processing while varying one of the plurality of parameters in a plurality of steps, and obtaining a first measured value of a thickness distribution of the coating for each step of the variation;
and generating a plurality of regression equations each indicating a change in thickness of the coating according to the one parameter for each of the plurality of positions on the substrate based on the first actual measurement value. Generating the estimated information includes:
performing the liquid processing while varying two of the plurality of parameters in a plurality of stages, and obtaining a second measured value of a thickness distribution of the coating for each combination of the stages in which the parameters are varied;
The substrate processing method according to any one of claims 1 to 8, further comprising: generating, for the plurality of positions on the substrate, a plurality of model equations that include mutual influences of the two parameters and indicate a change in thickness of the coating according to the two parameters, based on the second actual measurement value. A computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method according to any one of claims 1 to 9. a liquid processing unit that performs liquid processing including a coating process including discharging a processing liquid toward a surface of the substrate while rotating the substrate at a first rotation speed, and a drying process including rotating the substrate at a second rotation speed after the coating process to dry a coating of the processing liquid on the surface of the substrate;
a control unit for controlling the liquid processing unit;
The control unit
adjusting at least one parameter among the reference conditions, the parameter defining a condition of the liquid processing at a stage prior to the start of rotation of the substrate at the second rotation speed in the drying process, based on a thickness distribution of the coating obtained by causing the liquid processing unit to perform the liquid processing according to predetermined reference conditions and a target thickness distribution of the coating that is determined in advance;
performing the liquid treatment on the substrate by the liquid treatment unit according to a control condition obtained by adjusting the at least one parameter of the reference condition;
the thickness distribution of the coating is a distribution indicating a variation in thickness of the coating on the substrate,
Adjusting the at least one parameter comprises:
generating estimated information that associates changes in each of a plurality of parameters constituting the reference condition with an estimated value of a thickness distribution of the coating;
calculating an adjustment amount for the at least one parameter based on the estimated information ;
A substrate processing apparatus , wherein the estimated value of the film thickness distribution of the coating in the estimation information is an estimated value of an increase or decrease in film thickness at each of a plurality of positions on the substrate .

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