JP7329005B2 - Film forming apparatus, film forming method, and electronic device manufacturing method - Google Patents

Description

The present invention relates to a film forming apparatus, a film forming method, and an electronic device manufacturing method.

2. Description of the Related Art A film forming apparatus used for manufacturing an organic EL display or the like is required to improve the accuracy of forming a film of a vapor deposition material on a substrate. In Patent Document 1, the film thickness of a deposition material formed on a substrate is measured by an optical film thickness measuring device, and when the film thickness is insufficient, an additional film is formed on the substrate. Are listed. Patent Literature 2 describes calculating the film thickness and film formation rate of a vapor deposition material using a crystal oscillator monitor provided in a film formation chamber.

JP 2005-322612 A JP 2019-065391 A

Based on the relationship between the resonance frequency of the crystal oscillator and the amount of vapor deposition material deposited on the electrode of the crystal oscillator (the mass of the deposited vapor deposition material), the crystal oscillator monitor calculates the amount of vapor deposition material emitted from the fluctuation of the resonance frequency. Measure. However, the characteristics of crystal oscillators may fluctuate due to aging and individual differences. If the film forming operation is controlled based on the measured value of the emission amount of the vapor deposition material without considering the characteristics of such a crystal oscillator monitor, there is a possibility that the film cannot be formed with the desired accuracy.

SUMMARY OF THE INVENTION It is an object of the present invention to improve the accuracy of film formation in a film formation apparatus that controls the film formation operation based on the measured value of the amount of vapor deposition material released.

The present invention is a film forming apparatus for forming a film by evaporating a vapor deposition material on a substrate,
monitoring means for measuring the amount of the vapor deposition material emitted from the evaporation source that discharges the vapor deposition material;
a film thickness measuring means for measuring the film thickness of the vapor deposition material on the substrate;
with
the monitoring means comprises a replaceable quartz crystal arranged to deposit the deposition material from the evaporation source;
The monitoring means acquires a measured value of the emitted amount based on a change in the resonance frequency of the crystal oscillator due to the vapor deposition of the vapor deposition material on the crystal oscillator,
calibrating the film formation control performed based on the measured value of the emitted amount by the monitoring means based on the measured value of the film thickness by the film thickness measuring means ;
The film formation control is calibrated a plurality of times after replacing the crystal oscillator until the next replacement,
After the crystal oscillator is replaced and until the measured value by the film thickness measuring means is obtained, the first The feature is that the result is used .

Further, the present invention provides a film forming apparatus for forming a film by evaporating a vapor deposition material on a substrate,
monitoring means for measuring the amount of the vapor deposition material emitted from the evaporation source that discharges the vapor deposition material;
a film thickness measuring means for measuring the film thickness of the vapor deposition material on the substrate;
with
the monitoring means comprises a replaceable quartz crystal arranged to deposit the deposition material from the evaporation source;
The monitoring means acquires a measured value of the emitted amount based on a change in the resonance frequency of the crystal oscillator due to the vapor deposition of the vapor deposition material on the crystal oscillator,
correcting the measured value by the monitor means based on the measured value by the film thickness measuring means;
The correction is performed a plurality of times after replacing the crystal oscillator until the next replacement,
After replacing the crystal oscillator, the first result among the results of the correction performed before replacing the crystal oscillator is used until the measurement value by the film thickness measuring means is obtained. It is characterized by

Further, a film forming method according to the present invention includes a step of forming a film by evaporating a vapor deposition material emitted from an evaporation source onto a substrate;
obtaining a measured value of the amount of the vapor deposition material emitted from the vaporization source using monitor means having a replaceable crystal oscillator ;
obtaining a measured value of the film thickness of the deposition material on the substrate;
a step of calibrating film formation control, which is performed based on the measured value of the emitted amount, based on the measured value of the film thickness;
and replacing the crystal oscillator ,
The film formation control is calibrated a plurality of times after replacing the crystal oscillator until the next replacement,
After replacing the crystal oscillator, until the measured value of the film thickness is obtained, among the results of the calibration of the film formation control performed before replacing the crystal oscillator, the first result is It is characterized by diversion .

Further, a film forming method according to the present invention includes a step of forming a film by evaporating a vapor deposition material emitted from an evaporation source onto a substrate;
obtaining a measured value of the amount of the vapor deposition material emitted from the vaporization source using monitor means having a replaceable crystal oscillator ;
obtaining a measured value of the film thickness of the deposition material on the substrate;
correcting the emission measurement based on the film thickness measurement;
and replacing the crystal oscillator ,
The correction is performed a plurality of times after replacing the crystal oscillator until the next replacement,
After replacing the crystal oscillator and until the measured value of the film thickness is obtained, among the results of the correction performed before replacing the crystal oscillator, the first result is used. Characterized by

According to the present invention, it is possible to improve the accuracy of film formation in a film formation apparatus that controls the film formation operation based on the measured value of the release amount of the vapor deposition material.

Schematic diagram of electronic device manufacturing equipment Cross-sectional view showing the configuration of a film forming apparatus Schematic diagram showing the configuration of the deposition rate monitor Cross-sectional view showing the configuration of the pass chamber and film thickness measuring unit Block diagram showing the configuration of the film thickness measurement unit FIG. 2 is a plan view showing the structure of the film formation surface side of the substrate; Control block diagram of deposition equipment Diagram showing an example of timing for calibrating film formation control A diagram showing another example of timing for calibrating film formation control Diagram showing the measurement rate, etc. immediately after replacing the crystal unit FIG. 2 is a plan view of an electronic device manufacturing apparatus according to Embodiment 2; Diagram for explaining a method for manufacturing an electronic device

Preferred embodiments of the present invention will be described below with reference to the drawings. However, the following description merely exemplifies preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, unless otherwise specified, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. in the following description are intended to limit the scope of the present invention. do not have.

The present invention can be regarded as a film forming apparatus or film forming method for forming a film on a substrate. The present invention can also be regarded as an electronic device manufacturing apparatus or an electronic device manufacturing method using such a film forming apparatus or film forming method. The present invention can also be regarded as a control method for each of the devices described above.

INDUSTRIAL APPLICABILITY The present invention can be preferably applied when forming a thin film material layer with a desired pattern on the surface of a substrate through a mask. Any material such as glass, resin, metal, or silicon can be used as the substrate material. Any material such as an organic material or an inorganic material (metal, metal oxide) can be used as the vapor deposition material (film formation material). The technology of the present invention is typically applied to electronic device and optical member manufacturing apparatuses. In particular, it is suitable for organic electronic devices such as an organic EL display, an organic EL display device using the same, a thin film solar cell, and an organic CMOS image sensor. However, the application target of the present invention is not limited to this.

[Example 1]
In Example 1, as a basic example of the present invention, the overall configuration of the apparatus and the basic principles of film thickness measurement and control will be described.

<Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically showing a configuration of part of an electronic device manufacturing apparatus. The electronic device manufacturing apparatus of FIG. 1 is used, for example, to manufacture organic EL panels used in organic EL display devices for smartphones.

In the electronic device manufacturing apparatus, a plurality of cluster-type units (hereinafter also simply referred to as “units”) CU1 to CU3 are connected via connection chambers to form a manufacturing line. Each cluster type unit has a configuration in which a plurality of film formation chambers are arranged around a substrate transport robot. Note that the number of units is not limited to three. Also, the number of chambers belonging to each cluster is not limited to those described below. Also, the type and number of chambers may be different for each cluster. Hereinafter, in descriptions common to all units and descriptions that do not specify a unit, reference numerals written with "x" are used instead of numbers such as "CUx", and in descriptions of individual units, "CU1" (The same applies to reference signs attached to components other than units).

FIG. 1 shows part of a film forming apparatus for forming a film by evaporating a vapor deposition material on a substrate in the entire electronic device manufacturing apparatus. Upstream of the film forming apparatus, for example, a substrate stocker, a heating apparatus, a pretreatment apparatus such as cleaning, etc. may be provided. A substrate stocker or the like may be provided, and an electronic device manufacturing apparatus is configured by combining them as a whole. The substrate is conveyed in a flow along the direction of arrow F from the upstream side to the downstream side.

The cluster-type unit CUx has a central transfer chamber TRx, and a plurality of film formation chambers EVx1 to EVx4 and mask chambers MSx1 to MSx2 arranged around the transfer chamber TRx. Two adjacent units CUx and CUx+1 are connected by a connection room CNx. Each chamber TRx, EVx1 to EVx4, MSx1 to MSx2, and the connecting chamber CNx in the cluster type unit CUx are spatially connected, and the interior thereof is maintained in a vacuum or an inert gas atmosphere such as nitrogen gas. In this embodiment, each chamber constituting the unit CUx and the connecting chamber CNx is connected to a vacuum pump (not shown), and can be evacuated independently. Each chamber is also called a "vacuum chamber" or simply a "chamber". In this specification, the term “vacuum” refers to a state filled with gas having a pressure lower than atmospheric pressure.

A transport robot RRx as transport means for transporting the substrate S and the mask M is provided in the transport chamber TRx. The transport robot RRx is, for example, a multi-joint robot having a structure in which a robot hand holding the substrate S and the mask M is attached to a multi-joint arm. In the cluster-type unit CUx, the substrate S is transported by a transport means such as a transport robot RRx or a transport robot RCx, which will be described later, while maintaining a horizontal state in which the film-forming surface faces downward in the direction of gravity. The transport robot RRx transports the substrate S among the pass chamber PSx-1 on the upstream side, the film forming chambers EVx1 to EVx4, and the buffer chamber BCx on the downstream side. Further, the transport robot RRx transports the mask M between the mask chambers MSx1-MSx2 and the film forming chambers EVx1-EVx4.

The mask chambers MSx1 and MSx2 are chambers provided with mask stockers that store masks M used for film formation and used masks M, respectively. In the case of deposition film formation, as the mask M, a metal mask having a large number of openings is preferably used. The film formation chambers EVx1 to EVx4 are chambers for forming films on the surface of the substrate S (film formation surface).

The connection room CNx has a function of connecting the unit CUx and the unit CUx+1 and transferring the substrate S deposited in the unit CUx to the subsequent unit CUx+1. The connection chamber CNx of this embodiment includes, in order from the upstream side, a buffer chamber BCx, a swirl chamber TCx, and a pass chamber PSx. However, the configuration of the connection chamber CNx is not limited to this, and may be composed of only the buffer chamber BCx or the pass chamber PSx.

The buffer room BCx is a room for transferring the substrate S between the transfer robot RRx in the unit CUx and the transfer robot RCx in the connection room CNx. The buffer chamber BCx has a function of adjusting the loading speed and loading timing of the substrates S by temporarily accommodating a plurality of substrates S.

The turning chamber TCx is a chamber for rotating the orientation of the substrate S by 180 degrees. A transport robot RCx is provided in the turning chamber TCx for transferring the substrate S from the buffer chamber BCx to the pass chamber PSx. The transport robot RCx rotates 180 degrees while supporting the substrate S received in the buffer chamber BCx and delivers it to the pass chamber PSx. As a result, the direction when the substrate S is carried into the film forming chamber is the same for the unit CUx on the upstream side and the unit CUx+1 on the downstream side. It can be matched in each unit CUx.

The pass chamber PSx is a chamber for transferring the substrate S between the transfer robot RCx in the connecting room CNx and the transfer robot RRx+1 in the downstream unit CUx+1. In this embodiment, a film thickness measuring section is arranged in the pass chamber PSx (details will be described later).

Doors (for example, door valves or gate valves) that can be opened and closed are provided between the film formation chambers EVx1 to EVx4, the mask chambers MSx1 to MSx2, the transfer chamber TRx, the buffer chamber BCx, the swirl chamber TCx, and the pass chamber PSx. or a structure that is always open.

<Vacuum deposition equipment>
FIG. 2 schematically shows the configuration of the vacuum deposition apparatus 200 provided in the film forming chambers EVx1 to EVx4. The vacuum deposition apparatus 200 has a mask holder 201 holding a mask M, a substrate holder 202 holding a substrate S, an evaporation source unit 203 , a moving mechanism 204 , a film formation rate monitor 205 and a film formation controller 206 . A mask holder 201 , a substrate holder 202 , an evaporation source unit 203 , a moving mechanism 204 and a deposition rate monitor 205 are provided inside a vacuum chamber 207 . The film formation control unit 206 controls the evaporation source unit 203 and the moving mechanism 204 based on the output value of the film formation rate monitor 205 so that the film thickness of the thin film formed on the substrate S becomes a target value. Film deposition by the vapor deposition apparatus 200 is controlled.

The vacuum deposition apparatus 200 moves at least one of the mask holder 201 and the substrate holder 202 to align the mask M held by the mask holder 201 and the substrate S held by the substrate holder 202 (not shown). It further has a position adjustment mechanism (alignment mechanism). The position adjustment mechanism of this embodiment adjusts the relative position of the substrate S with respect to the mask M by moving the substrate holder 202 in the XY direction and rotating the substrate holder 202 in a plane substantially parallel to the surface of the substrate S on which the film is formed. Here, the XY directions are two non-parallel directions in a plane parallel to the film formation surface of the substrate S, and the θ direction is the rotation direction around the Z direction perpendicular to the XY plane.

The substrate S is placed on the upper surface of the mask M held in a horizontal state, with the film formation surface facing downward. Below the mask M, an evaporation source unit 203 that emits evaporation material is provided. The evaporation source unit 203 roughly includes a container (crucible) containing a vapor deposition material, a heater for heating the vapor deposition material in the container, and the like. In addition, if necessary, the evaporation source unit 203 may be provided with a reflector, a heat transfer member, a shutter, or the like for increasing the heating efficiency.

The moving mechanism 204 is means for moving (scanning) the evaporation source unit 203 parallel to the film formation surface of the substrate S. As shown in FIG. In this embodiment, a reciprocating scanning method using a single-axis moving mechanism 204 is exemplified, but depending on the shape of the evaporation source unit 203 and the size of the substrate S, a raster scanning method using a two-axis or more moving mechanism may be used. In addition, since the film formation rate changes according to the relative speed of the substrate S and the evaporation source unit 203, instead of moving the evaporation source unit 203 relative to the substrate S, the substrate S is moved within the plane by the evaporation source unit 203. It may be configured to move relative to 203 .

In this embodiment, the substrate S is placed on the upper surface of the mask M. However, the substrate S may not be placed on the upper surface of the mask M if the substrate S and the mask M are sufficiently in close contact with each other. may For example, a configuration in which the substrate S is brought into close contact with the lower surface of the mask M and the vapor deposition material flies from above, or a configuration in which the closely-contacted substrate S and the mask M are arranged vertically (parallel to the Z direction) may be used. Alternatively, a magnet unit (not shown) may be brought close to the surface of the substrate S opposite to the surface on which the film is formed, and the mask foil of the mask M may be attracted by a magnetic force to increase the adhesion of the mask M to the substrate S. good. Also, a cooling unit for cooling the substrate S may be provided, and the magnet unit may also serve as the cooling unit. Also, the evaporation source unit 203 can be configured such that a plurality of evaporation source units or containers are arranged side by side and moved as a unit. According to such a configuration, it is possible to store and evaporate different materials for each evaporation source unit or container, thereby forming a mixed film or a laminated film.

A film formation rate monitor 205 is monitoring means for measuring the amount of vapor deposition material emitted from the evaporation source unit 203 . The deposition rate monitor 205 of this embodiment is a crystal oscillation type deposition rate monitor, moves together with the evaporation source unit 203, deposits (deposits) the evaporation material emitted from the evaporation source unit 203, and deposits the evaporation material. It has a crystal oscillator arranged at a position that does not interfere with reaching the substrate S and forming a thin film. Depending on the amount of material deposited on the crystal oscillator, the resonant frequency of the crystal oscillator changes. The film formation rate monitor 205 is based on the relationship between the deposition amount (film thickness or mass of the deposited deposition material) of the deposition material on the electrode of the crystal oscillator and the change in the resonance frequency (eigenfrequency) of the crystal oscillator. A film formation rate (deposition rate) [Å/s], which is the deposition amount of the deposition material per unit time, is calculated. That is, the film formation rate monitor 205 measures the change in the resonance frequency of the crystal oscillator per unit time, and outputs the corresponding vapor deposition amount of the vapor deposition material as the film formation rate. The film formation rate is an amount that indirectly indicates the amount (release rate) of the vapor deposition material emitted from the evaporation source unit 203 per unit time. It is an example of a monitoring means for obtaining measured values of the amount of release.

FIG. 3 is a diagram showing a schematic configuration of the film formation rate monitor 205. As shown in FIG. The film formation rate monitor 205 includes a monitor head 11 , a shielding member 12 , crystal oscillators 13 ( 13 a and 13 b ), and a crystal holder 14 .

The monitor head 11 incorporates therein a crystal holder 14 that supports a plurality of crystal oscillators 13 (13a, 13b) arranged at regular intervals in the circumferential direction. The monitor head 11 is provided with one monitor opening 11a which is slightly larger than the crystal oscillator 13, and one of the plurality of crystal oscillators (crystal oscillator 13a) provided in the crystal holder 14 is provided. , is exposed to the outside (evaporation source unit 203) through the monitor opening 11a, and the other crystal oscillator 13b is hidden inside the monitor head 11 as a used or replacement crystal oscillator. The crystal holder 14 is connected to a motor shaft 16a of a servomotor (not shown) and driven to rotate. Thereby, the crystal oscillator 13 exposed to the outside through the monitor opening 11a can be sequentially switched. When the crystal oscillator 13 exposed to the outside through the monitor opening 11a reaches the end of its life when the deposition amount of the vapor deposition material 400 exceeds a predetermined amount, the crystal holder 14 rotates and a new crystal oscillator 13 is It is moved to a position overlapping the monitor opening 11a. Thereby, the crystal oscillator 13 is configured to be replaceable.

The shielding member 12 is a substantially disc-shaped member, the center of which is connected to a motor shaft 15a of a servomotor (not shown), and is rotationally driven by the servomotor. A fan-shaped opening slit 12a is provided in the shielding member 12. By rotating the shielding member 12, the monitor opening 11a of the monitor head 11 and the opening slit 12a of the shielding member 12 overlap and do not overlap. change alternately. When the monitor opening 11a and the opening slit 12a overlap, vapor deposition of the vapor deposition material onto the crystal oscillator 13a is permitted. Vapor deposition of the vapor deposition material 400 onto the vibrator 13a is prevented.

<Thickness measurement unit>
FIG. 4 is a cross-sectional view schematically showing the configuration of the pass chamber PSx. FIG. 4 shows a cross section along line AA of FIG. The pass chamber PSx is arranged downstream of the unit CUx, and is a chamber into which the substrate S on which film formation has been completed in the film formation chamber of the unit CUx is loaded. Inside the vacuum chamber 300 of the pass chamber PSx, a substrate tray 301 that holds the substrate S transported by the transport robot RCx and a film thickness measuring unit 310 that measures the film thickness of the deposition material on the substrate S are arranged. .

An inspection room for film thickness measurement may be provided instead of arranging the film thickness measurement unit 310 in the pass room PSx. Further, whether or not to arrange the film thickness measuring section 310 in the pass chamber PSx may be determined according to the contents of the processing in the cluster type unit CUx on the upstream side. For example, the film thickness measurement unit 310 is arranged when the light-emitting layer is formed in the unit CUx, the film thickness measurement unit 310 is arranged when the inter-electrode layer is formed in the unit CUx, and the unit CUx is arranged for each pixel. For example, the film thickness measurement unit 310 is arranged when using a fine mask of .

Although one film thickness measurement unit 310 is shown in FIG. 4, a plurality of film thickness measurement units may be arranged. By evaluating multiple locations at once, it is possible to obtain information on film thickness variations within the substrate surface, and to evaluate the film thickness of multiple types of vapor deposition materials deposited in multiple deposition chambers. becomes.

The film thickness measurement unit 310 is a sensor that optically measures the film thickness, and in this embodiment, a film thickness meter having a reflection spectroscopic optical sensor is used. The film thickness measurement section 310 is roughly composed of a film thickness evaluation unit 311 , a sensor head 312 , and an optical fiber 313 connecting the sensor head 312 and the film thickness evaluation unit 311 . The sensor head 312 is positioned below the substrate tray 301 within the vacuum chamber 300 and is connected to an optical fiber 313 via a vacuum flange 314 attached to the bottom surface of the vacuum chamber 300 . The sensor head 312 has a function of setting the irradiation area of the light guided through the optical fiber 313 to a predetermined area, and can use optical components such as optical fibers and pinholes and lenses.

FIG. 5 is a block diagram of the film thickness measuring section 310. As shown in FIG. The film thickness evaluation unit 311 has a light source 320 , a spectroscope 321 and a measurement controller 322 . A light source 320 is a device that outputs measurement light, and for example, a deuterium lamp, a xenon lamp, a halogen lamp, or the like is used. The wavelength of light can be in the range from 200 nm to 1 μm. The spectroscope 321 is a device that disperses the reflected light input from the sensor head 312 and measures the spectrum (intensity for each wavelength). be done. The measurement controller 322 is a device that controls the light source 320 and calculates the film thickness based on the reflection spectrum.

The measurement light output from the light source 320 is guided to the sensor head 312 via the optical fiber 313 and projected onto the substrate S from the sensor head 312 . Light reflected by the substrate S is input from the sensor head 312 to the spectroscope 321 via the optical fiber 313 . At this time, the light reflected by the surface of the thin film on the substrate S and the light reflected by the interface between the thin film and its underlying layer interfere with each other. By being affected by interference and absorption by the thin film in this way, the reflection spectrum is affected by the optical path length difference, that is, by the film thickness. By analyzing this reflection spectrum with the measurement control unit 322, the film thickness of the thin film can be calculated.

The film thickness evaluation using the reflection spectroscopic method described above is capable of evaluating an organic film with a thickness of several nanometers to several hundreds of nanometers in a short time with high accuracy. This is a preferred method for evaluation. Materials for the organic layer include αNPD: a hole-transporting material such as α-naphthylphenylbiphenyldiamine, Ir(ppy)3: a light-emitting material such as an iridium-phenylpyrimidine complex, and Alq3: tris(8-quinolinolato)aluminum. and Liq: 8-hydroxyquinolinolato-lithium). Furthermore, it may be applied to mixed films of the above organic materials. Since the spectroscopic interferometer does not require a motor, it is easy to use in a vapor deposition apparatus that requires a high degree of vacuum, and has the advantage of being able to measure near the substrate. However, the film thickness measurement unit 310 is not limited to this, and may be an ellipsometer or the like.

FIG. 6 shows a configuration example of the film formation surface side of the substrate S for facilitating the measurement by the film thickness measurement unit 310 . An area in which a plurality of display panels 340 are formed is provided in the central portion of the substrate S in this example, and a plurality of panels are manufactured by cutting the substrate S after the film formation is completed. A film thickness measurement area 330 is provided in an area in front of the transport direction (arrow F) of the substrate S, which does not overlap with the display panel 340 area. During the film forming process in each film forming chamber, the film is formed at a predetermined position in the film thickness measurement area 330 in parallel with the film formation on the display panel 340 portion. A thin film for film thickness measurement (hereinafter referred to as a patch for measurement 331, and may also be referred to as a piece for measurement or an organic film for evaluation) is formed inside. This can be realized by forming an opening for the measurement patch 331 in advance in the mask M used in each film forming chamber.

The film thickness measurement area 330 is set to have an area in which a plurality of measurement patches 331 can be formed. That is, to measure the film thickness of a film formed in one film formation chamber (either a single film or a laminated film in which a plurality of films are laminated), one If you want to deposit only a film in one deposition chamber and measure the film thickness of a layered film formed through a plurality of deposition chambers, the measurement patch 331 is also the same as the layered film to be measured. A laminated film is preferably formed. By using different measurement patches 331 for each layer to be measured in this manner, accurate measurement of film thickness can be realized. In order to form such a measurement patch 331, the position of the opening of the mask M should be changed for each film forming chamber.

The film thickness measurement unit 310 is arranged in the pass chamber PSx to which the substrate S on which the film formation in the film formation chambers EVx1 to EVx4 has been completed is transferred by the transfer robot RCx. The film thickness measuring unit 310 can measure the film thicknesses formed in the film forming chambers EVx1 to EVx4 or the sum of some of them, depending on the method of forming the measurement patch 331 .

<Deposition control>
The measured value (measurement rate) of the film formation rate output by the film formation rate monitor 205 may not match the actual film formation rate (actual rate) on the substrate S during film formation. The main cause is that the position of the crystal oscillator of the deposition rate monitor 205 and the position of the substrate S with respect to the evaporation source unit 203 are not the same. In order to eliminate this deviation, it is common practice to correct the measurement rate output by the deposition rate monitor 205 using a coefficient called tooling factor (TF).

However, even with correction using the tooling factor, the measured rate and the actual rate may still deviate. This is because the relationship between the deposition amount of the deposition material and the amount of change in the resonance frequency is not constant, but changes depending on the resonance frequency or the deposition amount. In general, the resonance frequency of a crystal oscillator decreases as the amount of vapor deposition in the crystal oscillator increases. Then, the amount of change in the resonance frequency of the crystal oscillator changes with respect to a constant vapor deposition amount. In other words, even if the amount of change in the resonance frequency of the crystal oscillator is constant, the amount of film formation for causing that amount of change changes according to the total amount of vapor deposition material deposited on the crystal oscillator up to that point. come. Therefore, even if the measured rate and the actual rate match immediately after the replacement of the crystal oscillator, the difference between the measured rate and the actual rate increases over time.

In addition, the relationship between the amount of change in the resonance frequency of a crystal oscillator and the amount of vapor deposition material varies due to individual differences in crystal oscillators. However, if the crystal unit is replaced with another crystal oscillator, the measured rate and the actual rate may deviate. If a constant set according to the configuration of the deposition equipment is used as the tooling factor, it is not possible to deal with variations due to changes over time and individual differences in the crystal oscillator monitor, so deposition control based on the measurement rate Therefore, there is a possibility that film formation cannot be performed with desired accuracy.

Therefore, in the film forming apparatus of this embodiment, the control shown in the control block diagram of FIG. 7 is performed. In FIG. 7, a film is formed on the substrate S2 in the film forming chamber EV. Further, in the pass chamber PS, film formation is performed before the substrate S2, and after the film formation is completed, the film thickness of the substrate S1 carried into the pass chamber PS is measured. Based on the rate measured by the film formation rate monitor 205, the film formation of the substrate S2 is controlled by the film formation controller 206. FIG. The film formation control unit 206 acquires the measured value of the film thickness of the substrate S1 from the film thickness measurement unit 310, and calibrates the film formation control of the substrate S2 based on the measured value of the film thickness of the substrate S1.

Since the film formation rate monitor 205 is provided in the film formation chamber EV, the measurement rate can be obtained during film formation. On the other hand, the film thickness measuring unit 310 is provided in the pass chamber PS in the latter stage of the film forming chamber EV, and obtains the measured value of the film thickness only after the substrate S1 on which film formation is completed is carried into the pass chamber PS. Can not do it. Therefore, the feedback control based on the measurement rate by the film formation rate monitor 205 reflects information on the film formation of the substrate S2 that is being performed at that time, but the feedback based on the film thickness measurement value by the film thickness measurement unit 310 is reflected. The control reflects the information of the previous film formation on the substrate S1.

In addition, while the film thickness measurement unit 310 takes time to complete film formation on at least one substrate in order to output a new measurement value, the film formation rate monitor 205 can perform new measurements in a short time. A value can be output. The feedback control based on the measurement rate by the film formation rate monitor 205 and the feedback control based on the film thickness measurement value by the film thickness measuring unit 310 greatly differ in the frequency of feedback of new measured values. Therefore, in this embodiment, feedback of the film thickness measured by the film thickness measuring unit 310 to the film formation control is expressed as "calibration". The rate measured by the film formation rate monitor 205 may deviate from the actual rate due to changes in the characteristics of the crystal oscillator over time. It means.

The film formation control by the film formation control unit 206, which is performed based on the rate measured by the film formation rate monitor 205, is performed by controlling various operating parameters of the vacuum deposition apparatus 200 so that the measured rate approaches the target value. . The operating parameters of the vacuum deposition apparatus 200 to be controlled include, for example, the heater temperature (heater current) and shutter opening of the evaporation source unit 203, the scanning speed of the evaporation source unit 203 by the moving mechanism 204, the film formation time, and the number of scans. etc. For example, increasing the scanning speed decreases the deposition rate, and decreasing the scanning speed increases the deposition rate. If the current flowing through the heater is increased, the amount of heat generated increases and the amount of the deposition material emitted increases, so that the film formation rate increases, and if the current is decreased, the film formation rate decreases.

The calibration of film formation control based on the film thickness measured by the film thickness measuring unit 310 is performed by correcting the measurement rate of the film formation rate monitor 205 based on the film thickness measurement. This correction is performed by changing the measurement value of the amount of film formation to be output with respect to the predetermined unit amount of change in the resonance frequency of the crystal oscillator. Specifically, the correction of the measurement rate is performed by correcting the tooling factor as in the following equation (1).

Here, TFcal is the tooling factor after correction, TForg is the tooling factor before correction, THmes is the value of the film thickness measured by the film thickness measurement unit 310, THtrg is the target value of the film thickness of the deposition material on the substrate S, Rmes, cal is the measurement rate after correction, and Rmes is the measurement rate before correction. The film formation control unit 206 feedback-controls the evaporation source unit 203 and the moving mechanism 204 based on the corrected measurement rates Rmes and cal calculated by the equation (2) using the corrected tooling factor TFcal, whereby crystal oscillation It is possible to perform film formation control in consideration of changes over time in the relationship between the resonance frequency of the element and the amount of vapor deposition material.

For example, assume that deposition is performed at a target rate of 1.000 Å/s for 100 seconds in order to deposit a target film thickness of 100 Å. That is, the evaporation source unit 203 and the moving mechanism 204 are feedback controlled so that the measurement rate by the film formation rate monitor 205 approaches 1.000 Å/s. The tooling factor TForg is assumed to be 100%. Assume that the film thickness of the deposition material on the substrate S on which the film formation is completed is measured by the film thickness measurement unit 301 and the measured film thickness is 98 Å. In this case, the measured rate by the film formation rate monitor 205 was 1.000 Å/s, but the actual rate was 0.98 Å/s. That is, the measurement rate calculated from the frequency change of the crystal oscillator was excessive. According to the above formula, the tooling factor TFcal after correction is 98%, and the film formation rate after correction calculated from the frequency change of the crystal oscillator is 0.98 Å/s, which is the actual rate output. will be If feedback control of the evaporation source unit 203 and the moving mechanism 204 is performed so that this measurement rate approaches the target rate of 1.000 Å/s, control is performed to raise the heater temperature of the evaporation source unit 203, for example. As a result, the amount of evaporation increases and the actual rate can be brought closer to the target rate of 1.000 Å/s.

The tooling factor is a value that indicates the relationship between the resonance frequency of the crystal oscillator and the amount of vapor deposition material deposited on the crystal oscillator. This is an example of correction of the relationship between .

The calibration of the film formation control based on the film thickness measurement value by the film thickness measurement unit 310 is performed based on the measurement rate, and the operation parameter adjustment amount (control amount) of the vacuum deposition apparatus 200 is adjusted to the film thickness measurement value. You may perform by correct|amending based on. For example, the heater current of the evaporation source unit 203 is corrected by the following formula (3).

where Rmes is the measurement rate, Rtrg is the target rate, Iprev is the heater current before adjustment by feedback control based on the measurement rate, Inew is the new heater current after adjustment by feedback control based on the measurement rate, Inew, cal is the new corrected heater current. If the measurement rate is not corrected as in Equation (2), the new current value adjusted by feedback control based on the measurement rate is calculated by Equation (4). is too high for the actual rate, the new current value will be too low for what it should be. By correcting this new current value based on the measured value of the film thickness as in the first term of the equation (3), the new current values Inew and cal become the original values. As shown in the second term of equation (3), this is equivalent to feedback-controlling the current value using the measurement rate corrected by equation (2).

Note that the measurement rate by the film formation rate monitor 205 is corrected based on the film thickness measurement value, and the adjustment amount of the operating parameter (eg, heater current value) of the vacuum deposition apparatus 200 is corrected based on the film thickness measurement value. can be combined with

When the film forming apparatus has a plurality of cluster-type units CUx, the film thickness measurement section 310 may be provided after each cluster type unit CUx, but the film thickness measurement section 310 is not necessarily arranged in all the pass chambers PSx. do not have to. The film thickness measurement unit 310 may be provided at least in the pass chamber PSx located after the cluster-type unit CUx on the most downstream side of the manufacturing line. When the film thickness measurement unit 310 is provided only after some of the cluster type units CUx, the measurement result of a certain film thickness measurement unit 310 is the film thickness of the cluster type unit CUx located upstream from the film thickness measurement unit 310. Can be used for control calibration.

<Timing for calibration>
An example of timing for calibrating the film formation control based on the film thickness measured by the film thickness measurement unit 310 will be described with reference to FIG. FIG. 8 is a graph showing an example of temporal changes in measured rate (∘), actual rate (×), actual film thickness (Δ) on a substrate during film formation, and tooling factor (□). The film formation rate monitor 205 of this embodiment includes a plurality of crystal oscillators as shown in FIG. The crystal oscillator is replaced by rotating the crystal holder 14 so that the FIG. 8 shows an example in which film formation control is calibrated each time the crystal oscillator is replaced. In the example of FIG. 8, calibration is performed once at an appropriate timing after replacing the crystal oscillator. In the example of FIG. 8, the crystal oscillator is replaced (XTAL CHG) at time t2, the crystal oscillator before replacement is calibrated at time t1, and the crystal oscillator after replacement is calibrated at time t3. is done. By performing such calibration, variations in the measurement rate due to individual differences in crystal oscillators can be corrected.

In the example of FIG. 8, the measured rate and the actual rate match for a while after calibrating the measured rate at time t1. After calibrating once at time t1, the tooling factor becomes a constant value, so the measured rate gradually deviates from the actual rate over time. When the replacement crystal unit is calibrated at time t3, the measured rate and the actual rate match for a while after that, but they deviate over time. Note that the example of FIG. 8 shows an example in which the characteristics of the crystal oscillator before replacement are similar to those of the crystal oscillator after replacement, and there is almost no change in the value of the tooling factor due to calibration.

Another example of the timing for calibrating the film formation control based on the film thickness measured by the film thickness measuring unit 310 will be described with reference to FIG. FIG. 9 is a graph showing an example of temporal changes in the measured rate (∘), the actual rate (x), the actual film thickness on the substrate during film formation (Δ), and the tooling factor (□). FIG. 9 shows an example in which film formation control is calibrated a plurality of times after replacing the crystal oscillator until the next replacement. In the example of FIG. 9, calibration is performed periodically, including appropriate timing, after the crystal unit is replaced. Calibration may be performed irregularly and multiple times. In the example of FIG. 9, the crystal oscillator is replaced (XTAL CHG) at time t6, and the crystal oscillator before replacement is calibrated at times t1, t2, t3, t4, and t5. The crystal oscillator is calibrated at times t7 and t8. By performing such calibration, it is possible to correct variations in the measurement rate due to individual differences in crystal oscillators, and to correct deviations between the measurement rate and the actual rate due to changes in the crystal oscillator over time.

In the example of FIG. 9, the tooling factor is gradually corrected to a smaller value from time t1 to t5. As a result, it is possible to prevent the measured rate from becoming excessively large relative to the actual rate, as in the case of FIG. Therefore, as shown in FIG. 8, the actual film thickness does not deviate from the target value, and film formation can be performed with high accuracy.

<Control immediately after crystal unit replacement>
FIG. 10 is a schematic diagram showing changes in the measurement rate and the tooling factor immediately after replacing the crystal oscillator. The solid line represents the measurement rate and the dash-dotted line represents the tooling factor. The crystal oscillator is replaced at time t1, and the output of the deposition rate monitor 205 is not stabilized immediately after the replacement of the crystal oscillator, but after a while (time t2) the output is stabilized. After that, until the film formation performed for the first time based on the measurement rate output using the replaced crystal unit is completed and the film thickness measurement value is obtained by the film thickness measurement unit 310 (time t3), , the deposition control cannot be calibrated based on film thickness measurements.

In film formation control immediately after replacement of the crystal oscillator, the period (time t1 to t3) until the film thickness measurement value is obtained for the first time is obtained by the first calibration performed for the crystal oscillator before replacement. Tooling factor TF1, first is used. That is, the result of film formation control calibration performed before replacing the crystal oscillator is used. As shown in FIG. 9, the tooling factor is corrected to a smaller value over time, so the tooling factor TF1,first obtained in the first calibration is a value greater than the tooling factor TF1,last immediately before replacement. . Variation in measurement rate due to individual differences in crystal oscillators is smaller than variation in measurement rate due to changes in crystal oscillators over time.

In film formation control immediately after replacement of the crystal oscillator, the period (time t1 to t3) until the first film thickness measurement value is obtained is the measurement rate (time t3) when the output of the film formation rate monitor 205 stabilizes. The film formation control may be performed using the measurement rate R2) at t2 as the target value of the film formation rate. As shown in FIG. 10, the measured rate when stabilized may deviate from the original target rate R1, but since the tooling factor has not been calibrated at this point, the measured rate R2 indicates the actual rate. not necessarily. On the other hand, even if the crystal oscillator is replaced, if there is no change in film formation control (heater temperature, etc.), it can be assumed that the actual rate maintains the value before the crystal oscillator replacement. Therefore, film formation control is performed with the measurement rate R2 at the stable time as a target value (the target rate is changed from R1 to R2). Alternatively, even though the measurement rate that should be output is R1, the film formation rate monitor 205 thinks that it is outputting R2, and corrects the tooling factor based on the measurement rate R2 at the time of stability and the target rate R1. good too.

[Example 2]
Here, an application example of the present invention to an electronic device manufacturing apparatus that is not a cluster type will be described. FIG. 11 shows a film forming apparatus for calibrating a part of the electronic device manufacturing apparatus of this embodiment, which is an in-line type film forming apparatus for forming a film while transporting the substrate S and the mask M aligned and in close contact with each other. there is

The film forming apparatus 300 includes a mask loading chamber 90, an alignment chamber 100 (mask mounting chamber), a plurality of film forming chambers 110a and 110b, reversing chambers 111a and 111b, a transfer chamber 112, a mask separation chamber 113, a substrate separation chamber 114, a carrier It has a transfer chamber 115 , a mask transfer chamber 116 , a substrate loading chamber 117 (substrate mounting chamber), and a film thickness measurement chamber 118 . The substrate S held by the substrate carrier 9 is transported within each chamber along the path indicated by the dashed line, and the mask M is transported along the path indicated by the dotted line.

The substrate S held by the substrate carrier 9 in the substrate carrying-in chamber 117 and carried into the path indicated by the dashed line is reversed by the reversing mechanism 120 a in the reversing chamber 111 a and mounted on the mask M in the mask carrying-in chamber 90 . Next, after alignment and close contact between the substrate S and the mask M are performed in the alignment chamber 100, the vapor is discharged from the evaporation source unit 203 (see FIG. 2) provided in the film forming chambers while being transported through the film forming chambers 110a and 110b. A film is formed by the deposited vapor deposition material. A deposition rate monitor 205 is attached to the substrate carrier. Therefore, the released vapor deposition material adheres to the film forming surface of the substrate S and also to the film forming rate monitor 205 . Thereby, the film formation rate during film formation is measured. A film thickness measuring unit 310 for optically measuring a film thickness is arranged in a film thickness measuring chamber 118 provided in the middle of the film forming chambers 110a and 110b, and the substrate carrier 9 is temporarily stopped. Then, the film thickness of the deposition material on the substrate S on which the film formation in the film formation chamber 110a is completed is measured.

Subsequently, the substrate S held by the substrate carrier is loaded into the transfer chamber 112 . A film thickness measurement unit 310 is also arranged in the transfer chamber 112, and measures the film thickness of the vapor deposition material on the substrate S on which the film formation in the film formation chamber 110b is completed. Next, after separating the mask M in the mask separating chamber 113, the substrate S is reversed in posture by the reversing mechanism 120b in the reversing chamber 111b, separated from the substrate carrier 9 in the substrate separating chamber 114, and carried out of the film forming apparatus 300. be done. On the other hand, the substrate carrier 9 is transferred to the substrate loading chamber 117 via the carrier transfer chamber 115 and holds the next substrate S thereon.

The film forming apparatus 300 also includes a film forming controller 206 . In the film forming apparatus 300 having the configuration of this embodiment, the film forming rate monitor 205 mounted on the substrate carrier 9 measures the film forming rate during film formation, and the film thickness measuring unit 310 measures the The film thickness of the vapor deposition material is optically measured. The film formation control unit 206 controls the relative speed between the evaporation source unit 203 arranged in the film formation chamber and the substrate S by adjusting the transport speed of the substrate carrier 9 based on the measured value of the film formation rate. By controlling the current supplied to the source unit 203, the evaporation amount of the vapor deposition material is controlled. The film formation control unit 206 calibrates such film formation control based on the film thickness measured by the film thickness measurement unit 310 . Therefore, the same principle as in the above embodiment enables accurate film formation control.

[Example 3]
(Method for producing organic electronic device)
In this embodiment, an example of a method for manufacturing an organic electronic device using a film forming apparatus will be described. Hereinafter, as an example of the organic electronic device, the structure and manufacturing method of an organic EL display device will be illustrated. First, the organic EL display device to be manufactured will be described. FIG. 12(a) shows an overall view of the organic EL display device 50, and FIG. 12(b) shows a cross-sectional structure of one pixel.

As shown in FIG. 12A, in a display region 51 of an organic EL display device 50, a plurality of pixels 52 each having a plurality of light emitting elements are arranged in a matrix. Each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The term "pixel" as used herein refers to a minimum unit capable of displaying a desired color in the display area 51. FIG. In the case of the organic EL display device shown in this figure, the pixel 52 is configured by a combination of the first light emitting element 52R, the second light emitting element 52G, and the third light emitting element 52B that emit light different from each other. The pixel 52 is often composed of a combination of a red light emitting element, a green light emitting element and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element and a white light emitting element. It is not limited.

FIG. 12(b) is a schematic partial cross-sectional view along line AB in FIG. 12(a). The pixel 52 includes, on a substrate 53, a first electrode (anode) 54, a hole transport layer 55, one of the light emitting layers 56R, 56G, and 56B, an electron transport layer 57, and a second electrode (cathode) 58. and an organic EL element. Among these layers, the hole transport layer 55, the light emitting layers 56R, 56G and 56B, and the electron transport layer 57 correspond to organic layers. In this embodiment, the light-emitting layer 56R is an organic EL layer that emits red, the light-emitting layer 56G is an organic EL layer that emits green, and the light-emitting layer 56B is an organic EL layer that emits blue.

The light-emitting layers 56R, 56G, and 56B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red, green, and blue, respectively. Also, the first electrode 54 is formed separately for each light emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common with the plurality of light emitting elements 52R, 52G, and 52B, or may be formed for each light emitting element. An insulating layer 59 is provided between the first electrodes 54 to prevent short-circuiting between the first electrode 54 and the second electrode 58 due to foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

Next, an example of a method for manufacturing an organic EL display device as an electronic device will be specifically described. First, a substrate 53 on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed is prepared.

Next, an acrylic resin is formed by spin coating on the substrate 53 on which the first electrodes 54 are formed, and the acrylic resin is patterned by lithography so that openings are formed in the portions where the first electrodes 54 are formed. Then, an insulating layer 59 is formed. This opening corresponds to a light emitting region where the light emitting element actually emits light.

Next, the substrate 53 on which the insulating layer 59 is patterned is carried into the first film forming apparatus, the substrate is supported by the substrate support unit, and the hole transport layer 55 is formed on the first electrode 54 in the display area. It is deposited as a common layer. The hole transport layer 55 is deposited by vacuum deposition. Since the hole transport layer 55 is actually formed to have a size larger than that of the display area 51, a high-definition mask is not required. Here, the film formation apparatus used in the film formation in this step and the film formation of each layer below is the film formation apparatus described in any of the above embodiments.

Next, the substrate 53 formed with up to the hole transport layer 55 is carried into the second film forming apparatus and supported by the substrate supporting unit. The substrate and the mask are aligned, the substrate is placed on the mask, and a light-emitting layer 56R emitting red is formed on the portion of the substrate 53 where the element emitting red is to be arranged. According to this example, the mask and the substrate can be satisfactorily overlapped, and highly accurate film formation can be performed.

Similarly to the deposition of the light emitting layer 56R, the third deposition apparatus deposits the green light emitting layer 56G, and the fourth deposition apparatus deposits the blue light emitting layer 56B. After the formation of the light-emitting layers 56R, 56G, and 56B is completed, the electron transport layer 57 is formed over the entire display area 51 by the fifth film forming apparatus. The electron transport layer 57 is formed as a layer common to the three color light-emitting layers 56R, 56G, and 56B.

The substrate on which the electron transport layer 57 is formed is transferred to a sputtering apparatus, the second electrode 58 is formed, and then transferred to a plasma CVD apparatus to form the protective layer 60, thereby completing the organic EL display device 50. do.

If the substrate 53 on which the insulating layer 59 is patterned is carried into the film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 60 is completed, the light emitting layer made of the organic EL material will be damaged. It may deteriorate due to moisture and oxygen. Therefore, in this example, substrates are carried in and out between film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.

The film thickness measurement method and the film formation control method using the film thickness according to the present disclosure can be suitably used in forming each of the above layers including the light emitting layer. As a result, it is possible to achieve good film formation control with improved accuracy in film thickness measurement and control in the film formation process on the substrate.

S: substrate, 205: film formation rate monitor, 310: film thickness measurement section, 206: film formation control section

Claims (14)

A film forming apparatus for forming a film by evaporating a vapor deposition material on a substrate,
monitoring means for measuring the amount of the vapor deposition material emitted from the evaporation source that discharges the vapor deposition material;
a film thickness measuring means for measuring the film thickness of the vapor deposition material on the substrate;
with
the monitoring means comprises a replaceable quartz crystal arranged to deposit the deposition material from the evaporation source;
The monitoring means acquires a measured value of the emitted amount based on a change in the resonance frequency of the crystal oscillator due to the vapor deposition of the vapor deposition material on the crystal oscillator,
calibrating the film formation control performed based on the measured value of the emitted amount by the monitoring means based on the measured value of the film thickness by the film thickness measuring means ;
The film formation control is calibrated a plurality of times after replacing the crystal oscillator until the next replacement,
After the crystal oscillator is replaced and until the measured value by the film thickness measuring means is obtained, the first A film forming apparatus characterized by using a result . 2. The film forming apparatus according to claim 1, wherein calibration of said film forming control is performed by correcting the measured value by said monitor means based on the measured value by said film thickness measuring means. 2. The film formation control method according to claim 1, wherein the calibration of the film formation control is performed by correcting the control amount of the film formation apparatus based on the measured value by the monitor means, based on the measured value by the film thickness measuring means. membrane device. 2. The film forming apparatus according to claim 1, wherein said film forming control is performed by controlling said film forming apparatus so that the value measured by said monitor means approaches a target value. 5. The calibration of the film formation control is performed by changing the measurement value of the emission amount with respect to a predetermined unit amount of the change amount based on the measurement value of the film thickness measuring means.
The film forming apparatus according to item 1 . A film forming apparatus for forming a film by evaporating a vapor deposition material on a substrate,
monitoring means for measuring the amount of the vapor deposition material emitted from the evaporation source that discharges the vapor deposition material;
a film thickness measuring means for measuring the film thickness of the vapor deposition material on the substrate;
with
the monitoring means comprises a replaceable quartz crystal arranged to deposit the deposition material from the evaporation source;
The monitoring means acquires a measured value of the emitted amount based on a change in the resonance frequency of the crystal oscillator due to the vapor deposition of the vapor deposition material on the crystal oscillator,
correcting the measured value by the monitor means based on the measured value by the film thickness measuring means;
The correction is performed a plurality of times after replacing the crystal oscillator until the next replacement,
After replacing the crystal oscillator, the first result among the results of the correction performed before replacing the crystal oscillator is used until the measurement value by the film thickness measuring means is obtained. A film forming apparatus characterized by: 7. The film forming apparatus according to claim 6 , wherein film forming control is performed so that the measured value by said monitor means approaches a target value. 8. The film forming apparatus according to claim 6, wherein the correction is performed by changing the measured value of the emission amount with respect to a predetermined unit amount of the change amount based on the measured value by the film thickness measuring means. a film formation chamber having the evaporation source;
A chamber into which the substrate on which the film formation is completed is loaded,
9. The film forming apparatus according to claim 1, wherein said monitor means is provided in said film forming chamber, and said film thickness measuring means is provided in said chamber. 10. The film forming apparatus according to claim 9 , comprising a cluster type unit including a plurality of said film forming chambers, wherein said chambers are arranged downstream of said cluster type unit. 11. The film forming apparatus according to claim 10 , comprising a plurality of said cluster type units, wherein said chamber is arranged downstream of at least the most downstream cluster type unit. a step of depositing a deposition material emitted from an evaporation source on a substrate to form a film;
obtaining a measured value of the amount of the vapor deposition material emitted from the vaporization source using monitor means having a replaceable crystal oscillator ;
obtaining a measured value of the film thickness of the deposition material on the substrate;
a step of calibrating film formation control, which is performed based on the measured value of the emitted amount, based on the measured value of the film thickness;
and replacing the crystal oscillator ,
The film formation control is calibrated a plurality of times after replacing the crystal oscillator until the next replacement,
After replacing the crystal oscillator, until the measured value of the film thickness is obtained, among the results of the calibration of the film formation control performed before replacing the crystal oscillator, the first result is A film forming method characterized by diversion . a step of depositing a deposition material emitted from an evaporation source on a substrate to form a film;
obtaining a measured value of the amount of the vapor deposition material emitted from the vaporization source using monitor means having a replaceable crystal oscillator ;
obtaining a measured value of the film thickness of the deposition material on the substrate;
correcting the emission measurement based on the film thickness measurement;
and replacing the crystal oscillator ,
The correction is performed a plurality of times after replacing the crystal oscillator until the next replacement,
After replacing the crystal oscillator and until the measured value of the film thickness is obtained, among the results of the correction performed before replacing the crystal oscillator, the first result is used. A film forming method characterized by: An electronic device manufacturing method for manufacturing an electronic device using the film forming method according to claim 12 or 13 .

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