JP7361202B2 - Substrate processing equipment, gas supply equipment, cleaning method for raw material supply pipes, semiconductor device manufacturing method and program - Google Patents

Description

The present disclosure relates to a substrate processing apparatus, a gas supply apparatus, a method for cleaning a raw material supply pipe, a method for manufacturing a semiconductor device, and a program.

2. Description of the Related Art As a step in the manufacturing process of a semiconductor device, a process of forming a film on a substrate housed in a processing chamber is sometimes performed. Examples of the film to be formed include a metal oxide film. When forming such a metal oxide film, a liquid raw material may be vaporized and a vaporized gas may be used (for example, see Patent Document 1).

JP 2019-173062 Publication

In Patent Document 1, a liquid raw material is vaporized in a vaporizer and supplied into a processing chamber, but the liquid raw material is thermally decomposed in the vaporizer due to the influence of heating during vaporization, so that the vaporizer is continuously operated. Continuing to use it may cause problems such as changes in film quality or generation of foreign matter in the formed film. To avoid such problems, it may be necessary to replace the vaporizer.

An object of the present disclosure is to provide a technology that allows a vaporizer (tank) that vaporizes a liquid raw material to be replaced without causing such problems.

According to one aspect of the present disclosure,
a processing chamber for processing the substrate;
a gas supply system that supplies raw material gas into the processing chamber;
an exhaust system that includes an exhaust pipe connected to the processing chamber and exhausts the atmosphere inside the processing chamber;
The gas supply system includes:
a tank that vaporizes a liquid raw material to generate the raw material gas;
a raw material supply pipe that supplies the liquid raw material to the tank;
a cleaning solvent container containing a cleaning solvent for cleaning the raw material supply pipe;
The raw material supply pipe includes, in order from upstream, a first valve that controls an operation of supplying an inert gas to the raw material supply pipe, and a first valve that controls an operation of supplying the inert gas or the cleaning solvent to the raw material supply pipe. a third valve that controls the supply operation of the inert gas, the cleaning solvent, or the liquid raw material to the raw material supply pipe; and the liquid in the raw material supply pipe to the tank. A fourth valve for controlling a raw material supply operation is provided.

According to the present disclosure, it is possible to provide a technique that allows a vaporizer that vaporizes a liquid raw material to be replaced without causing foreign matter.

FIG. 2 is a schematic configuration diagram of a processing furnace of the substrate processing apparatus (the processing furnace portion is shown in a longitudinal cross-sectional view). FIG. 2 is a cross-sectional view taken along line AA in FIG. 1. FIG. 2 is a schematic diagram of the piping relationship of the substrate processing apparatus. FIG. 2 is a block diagram showing the configuration of a controller. FIG. 3 is a diagram showing a metal oxide film formation sequence. This is a first configuration example around the carburetor. This is a cleaning flow for raw material supply pipes. This is a second configuration example around the carburetor.

Below, preferred embodiments of the present disclosure will be described with reference to FIGS. 1 to 4. Note that the drawings used in the following explanation are all schematic, and the dimensional relationship of each element, the ratio of each element, etc. shown in the drawings do not necessarily match the reality. Moreover, the dimensional relationship of each element, the ratio of each element, etc. do not necessarily match between a plurality of drawings.

(1) Configuration of Substrate Processing Apparatus The substrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating means (heating mechanism, heating system). The heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) serving as a holding plate.

Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and has a cylindrical shape with a closed upper end and an open lower end. A manifold 209 is arranged below the reaction tube 203 and concentrically with the reaction tube 203 . The manifold 209 is made of metal such as stainless steel (SUS), and has a cylindrical shape with open upper and lower ends. An O-ring 220a serving as a sealing member is provided between the upper end of the manifold 209 and the reaction tube 203. Since the manifold 209 is supported by the heater base, the reaction tube 203 is installed perpendicularly to the heater 207. The reaction tube 203 and the manifold 209 mainly constitute a processing container (reaction container). A processing chamber 201 is formed in the cylindrical hollow part of the processing container. The processing chamber 201 is configured to be capable of accommodating wafers 200 as substrates in a boat 217, which will be described later, in a state where the wafers 200 are horizontally arranged in multiple stages in the vertical direction.

Nozzles 410 and 420 are provided in the processing chamber 201 so as to penetrate the side wall of the manifold 209. Gas supply pipes 310 and 320 are connected to the nozzles 410 and 420, respectively. Gas supply pipes 310 and 320 function as gas supply lines. The nozzles 410 and 420 may be included in the gas supply line. The processing furnace 202 of this embodiment is not limited to the above-mentioned form. The number of nozzles etc. may be changed as necessary.

The gas supply pipes 310, 320 are provided with tanks (vaporizers) 610, 620 and valves 314, 324, which are on-off valves, respectively, in this order from the upstream direction. Gas supply pipes 510 and 520 are connected to the gas supply pipes 310 and 320 downstream of the valves 314 and 324, respectively. The gas supply pipes 510 and 520 function as gas supply lines that supply inert gas. The gas supply pipes 510, 520 are provided with MFCs 512, 522 and valves 514, 516, 524, 526, respectively, in this order from the upstream direction. Gas supply pipes 530 and 540 serving as gas supply lines for supplying inert gas are connected to the tanks 610 and 620. The gas supply pipes 530, 540 are provided with MFCs 532, 542 and valves 534, 544, respectively, in this order from the upstream direction.

The nozzles 410 and 420 are configured as L-shaped nozzles, and the horizontal portion thereof is provided so as to penetrate the side wall of the manifold 209 and the reaction tube 203. The vertical portions of the nozzles 410 and 420 extend upward in the loading direction of the wafers 200 along the inner wall of the reaction tube 203 from the bottom to the top, in an annular space between the reaction tube 203 and the wafer 200 in plan view. They are each provided to stand up and extend.

A plurality of gas supply holes 410a and 420a for supplying gas are provided on the side surfaces of the nozzles 410 and 420 at a height corresponding to the wafer 200 (a height corresponding to the loading area of the wafer 200), respectively. The gas supply holes 410a and 420a are open toward the center of the reaction tube 203, and can supply gas toward the wafer 200. A plurality of gas supply holes 410a and 420a are provided from the bottom to the top of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch. However, the gas supply holes 410a and 420a are not limited to the above-mentioned form. For example, the opening area may be gradually increased from the lower part (upstream side) to the upper part (downstream side) of the nozzles 410, 420. This makes it possible to make the flow rate of gas supplied from the gas supply holes 410a and 420a more uniform.

A processing gas (raw material gas) is supplied from the gas supply pipe 310 into the processing chamber 201 via valves 314 and 516 and a nozzle 410. The source gas is stored in a liquid state in a tank (vaporizer) 610. Inert gas is supplied from gas supply pipe 530 into tank 610 via MFC 532 and valve 534 . Further, a temperature adjustment mechanism (for example, heating with a jacket heater, cooling with a Peltier element, etc.) for adjusting the temperature of the liquid metal raw material tank 610 is provided on the outside of the liquid metal raw material tank 610. Bringing the supplied liquid metal raw material to a predetermined temperature using a temperature adjustment mechanism, or adjusting the amount of inert gas supplied as a carrier gas to a predetermined flow rate, or adjusting both the temperature adjustment mechanism and the supply flow rate of the inert gas. By adjusting these, the source gas is made to flow into the gas supply pipe 310 at a predetermined flow rate. In this specification, when the term "source gas" is used, it means "source gas in a liquid state", "source gas in a gaseous state", or both. There are cases where

From the gas supply pipe 320, a processing gas (reactive gas), such as a gas containing oxygen (O), is supplied into the processing chamber 201 via valves 324, 526 and nozzles 420. The oxygen-containing gas is contained in a tank (vaporizer) 620 in a liquid state. An inert gas is supplied into the tank 620 from the gas supply pipe 540 via the MFC 542 and the valve 544, thereby being vaporized. The vaporized gas is then supplied to the gas supply pipe 320. In this specification, when the term "oxygen-containing gas" is used, it means "oxygen-containing gas in a liquid state", "oxygen-containing gas in a gaseous state", or It can mean both.

Inert gas is supplied from the gas supply pipes 510, 520 into the processing chamber 201 via MFCs 512, 522, valves 514, 516, 524, 526, gas supply pipes 310, 320, and nozzles 410, 420, respectively. .

A raw material gas supply system is mainly composed of the gas supply pipe 310 and the valve 314. The nozzle 410 may be included in the source gas supply system, or the tank (vaporizer) 610, gas supply pipe 530, MFC 532, and valve 534 may be included in the source gas supply system.

A reaction gas supply system is mainly composed of a gas supply pipe 320 and a valve 324. The nozzle 420 may be included in the reaction gas supply system, or the tank (vaporizer) 620, gas supply pipe 540, MFC 542, and valve 544 may be included in the reaction gas supply system.

An inert gas supply system is mainly composed of gas supply pipes 510, 520, MFCs 512, 522, and valves 514, 516, 524, 526. The raw material gas supply system and the reaction gas supply system can also be collectively referred to as a gas supply system. The inert gas supply system may be included in the gas supply system.

The reaction tube 203 is provided with an exhaust pipe 231 serving as an exhaust flow path for exhausting the atmosphere inside the processing chamber 201 . The exhaust pipe 231 is connected to a pressure sensor 245 as a pressure detector (pressure detection section) that detects the pressure inside the processing chamber 201 and an APC (Auto Pressure Controller) valve 243 as an exhaust valve (pressure adjustment section). A vacuum pump 246 as a vacuum evacuation device is connected. The APC valve 243 can perform evacuation and stop of evacuation in the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is in operation, and further, with the vacuum pump 246 in operation, The pressure inside the processing chamber 201 can be adjusted by adjusting the valve opening based on pressure information detected by the pressure sensor 245. An exhaust system is mainly composed of an exhaust pipe 231, an APC valve 243, and a pressure sensor 245. The vacuum pump 246 may be included in the exhaust system.

A seal cap 219 is provided below the manifold 209 as a furnace mouth cover that can airtightly close the lower end opening of the manifold 209. An O-ring 220 as a sealing member that comes into contact with the lower end of the manifold 209 is provided on the upper surface of the seal cap 219. A rotation mechanism 267 for rotating a boat 217, which will be described later, is installed on the side of the seal cap 219 opposite to the processing chamber 201. The rotation shaft 255 of the rotation mechanism 267 is connected to the boat 217 through the seal cap 219, and is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be vertically raised and lowered by a boat elevator 115 serving as a lifting mechanism installed vertically outside the reaction tube 203. The boat elevator 115 is configured to be able to carry the boat 217 into and out of the processing chamber 201 by raising and lowering the seal cap 219. The boat elevator 115 is configured as a transport device (transport mechanism) that transports the boat 217, that is, the wafer 200, into and out of the processing chamber 201. Further, below the manifold 209, a shutter is provided as a furnace mouth cover that can airtightly close the lower end opening of the manifold 209 while the seal cap 219 is being lowered by the boat elevator 115. An O-ring as a sealing member that comes into contact with the lower end of the manifold 209 is provided on the upper surface of the shutter. The shutter opening/closing operation (elevating/lowering operation, rotating operation, etc.) is controlled by a shutter opening/closing mechanism.

The boat 217 serving as a substrate support is configured to support a plurality of wafers 200, for example, 25 to 200 wafers 200 in a horizontal position and aligned vertically with their centers aligned with each other in multiple stages. It is configured to be loaded (arranged, placed) at intervals. The boat 217 is made of a heat-resistant material such as quartz or SiC. At the bottom of the boat 217, heat insulating plates (not shown) made of a heat-resistant material such as quartz or SiC are supported in multiple stages.

A temperature sensor 263 as a temperature detector is installed inside the reaction tube 203. By adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 becomes a desired temperature distribution. The temperature sensor 263 is L-shaped like the nozzles 410 and 420, and is provided along the inner wall of the reaction tube 203.

The controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I/O port 121d. The RAM 121b, storage device 121c, and I/O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input/output device 122 configured as, for example, a touch panel is connected to the controller 121 .

The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 121c, a control program for controlling the operation of the substrate processing apparatus, a process recipe in which procedures, conditions, etc. of substrate processing to be described later are described, and the like are stored in a readable manner. The process recipe is a combination of instructions that causes the controller 121 to execute each procedure in the film forming process described later to obtain a predetermined result, and functions as a program. Hereinafter, this process recipe, control program, etc. will be collectively referred to as simply a program. Further, a process recipe is also simply referred to as a recipe. When the word program is used in this specification, it may include only a single process recipe, only a single control program, or a combination thereof. The RAM 121b is configured as a memory area (work area) in which programs, data, etc. read by the CPU 121a are temporarily held.

The I/O port 121d includes the MFCs 512, 522, 532, 542, valves 314, 324, 514, 516, 524, 526, 534, 544, 711, 712, 713, 714, 715, 716, 717 described above or later. , 801, 802, pressure sensors 245, 724, APC valve 243, vacuum pumps 246, 722, temperature sensor 263, heaters 207, 723, rotation mechanism 267, boat elevator 115, shutter opening/closing mechanism, etc.

The CPU 121a is configured to read and execute a control program from the storage device 121c, and read recipes from the storage device 121c in response to input of operation commands from the input/output device 122. The CPU 121a adjusts the flow rate of various gases by the MFCs 512, 522, 532, 542, and the valves 314, 324, 514, 516, 524, 526, 534, 544, 711, 712, 713 in accordance with the contents of the read recipe. , 714, 715, 716, 717, 801, 802, opening/closing operation of the APC valve 243 and pressure adjustment operation by the APC valve 243 based on the pressure sensor 245, starting and stopping of the vacuum pump 246, and heater based on the temperature sensor 263. It is configured to control the temperature adjustment operation of the boat 207, the rotation and rotational speed adjustment operation of the boat 217 by the rotation mechanism 267, the raising and lowering operation of the boat 217 by the boat elevator 115, the opening and closing operation of the shutter by the shutter opening and closing mechanism, and the like.

The controller 121 is stored in an external storage device 123 (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card). The above-mentioned program can be configured by installing it on a computer. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to as simply recording media. When the term "recording medium" is used in this specification, it may include only the storage device 121c, only the external storage device 123, or both. Note that the program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 123.

(2) Substrate processing process (film formation process)
An example of a process of forming a metal oxide film on a substrate will be described as a process of manufacturing a semiconductor device. The process of forming the metal oxide film is performed using the processing furnace 202 of the substrate processing apparatus 10 described above. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by a controller 121.

Note that when the word "wafer" is used in this specification, it may mean "the wafer itself" or "a laminate (assembly) of a wafer and a predetermined layer or film formed on its surface." '' (that is, the term wafer includes a predetermined layer, film, etc. formed on the surface). In addition, when the term "wafer surface" is used in this specification, it may mean "the surface (exposed surface) of the wafer itself" or "the surface of a predetermined layer, film, etc. formed on the wafer". , that is, the outermost surface of a wafer as a laminate. Note that in this specification, when the word "substrate" is used, it has the same meaning as when the word "wafer" is used.

The method for manufacturing a semiconductor device according to this embodiment will be described in detail below.

(Wafer loading)
A plurality of wafers 200 are carried into the processing chamber 201 (boat loaded). Specifically, when a plurality of wafers 200 are loaded onto the boat 217 (wafer charging), the boat 217 supporting the plurality of wafers 200 is lifted up by the boat elevator 115, as shown in FIG. and transported into the processing chamber 201. In this state, the seal cap 219 closes the lower end opening of the reaction tube 203 via the O-ring 220.

(Pressure/temperature adjustment)
The inside of the processing chamber 201 is evacuated by a vacuum pump 246 to a desired pressure (degree of vacuum). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled (pressure adjustment) based on the measured pressure information. The vacuum pump 246 is kept in constant operation at least until the processing on the wafer 200 is completed. Further, the inside of the processing chamber 201 is heated by a heater 207 so as to reach a desired temperature. At this time, the amount of electricity supplied to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution (temperature adjustment). The heater 207 continues to heat the inside of the processing chamber 201 at least until the processing of the wafer 200 is completed.

(Film forming step)
Thereafter, a source gas supply step, a residual gas removal step, a reaction gas supply step, and a residual gas removal step are performed a predetermined number of times in this order.

(Raw material gas supply step)
The valves 314 and 516 are opened to allow the source gas to flow into the gas supply pipe 310. The source gas flowing through the gas supply pipe 310 is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410. At this time, source gas is supplied to the wafer 200. At this time, the valve 514 is simultaneously opened to allow the carrier gas to flow into the gas supply pipe 510. The flow rate of the carrier gas flowing through the gas supply pipe 510 is adjusted by the MFC 512. The carrier gas whose flow rate has been adjusted is supplied into the processing chamber 201 together with the source gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent the raw material gas from entering into the nozzle 420, the valves 524 and 526 are opened to allow the carrier gas to flow into the gas supply pipe 520. The carrier gas is supplied into the processing chamber 201 via the gas supply pipe 520 and the nozzle 420, and is exhausted from the exhaust pipe 231.

At this time, the APC valve 243 is appropriately adjusted to bring the pressure inside the processing chamber 201 to a (predetermined) pressure within the range of, for example, 1 to 1200 Pa, preferably 10 to 100 Pa, and more preferably 40 to 60 Pa. If the pressure is higher than 1200 Pa, the residual gas removal described below may not be performed sufficiently, and if the pressure is lower than 1 Pa, it may not be possible to obtain a sufficient reaction rate of the raw material gas. In this specification, when a numerical value range is described as, for example, 1 to 1200 Pa, it means that the lower limit and upper limit are included in that range, and it means 1 Pa or more and 1200 Pa or less. The same applies not only to pressure but also to all other numerical values described in this specification.

The supply flow rate of the raw material gas is, for example, a (predetermined) flow rate within the range of 0.008 to 0.1 slm. The carrier gas supply flow rates controlled by the MFCs 512, 522, and 532 are each set to a (predetermined) flow rate within a range of 0.1 to 40 slm, for example. The gas supply time (irradiation time) for supplying the source gas to the wafer 200 is, for example, a (predetermined) time within a range of 0.1 to 60 seconds.

At this time, the gases flowing into the processing chamber 201 are only the source gas and the carrier gas. A metal-containing layer containing metal is formed on the wafer 200 by supplying the source gas.

(Residual gas removal step)
Thereafter, the valve 314 is closed to stop supplying the raw material gas. At this time, the APC valve 243 of the exhaust pipe 231 remains open, and the inside of the processing chamber 201 is evacuated by the vacuum pump 246, so that the unreacted material remaining in the processing chamber 201 or the metal-containing layer described above is removed. The raw material gas is removed from the processing chamber 201. Note that at this time, the valves 514 and 524 remain open to maintain the supply of carrier gas into the processing chamber 201. The carrier gas (inert gas) acts as a purge gas, and thereby has the effect of eliminating from the processing chamber 201 unreacted raw material gas that remains in the processing chamber 201 or that has contributed to the formation of the metal-containing layer described above. can be increased. At this time, evacuation and gas purge with carrier gas may be performed simultaneously, or evacuation and carrier gas purge may be performed alternately (cyclically) a predetermined number of times until the oxygen-containing supply step described below. If they are performed simultaneously, the pressure inside the processing chamber 201 during gas purge by supplying the carrier gas is set to be higher than the pressure inside the processing chamber 201 during the raw material gas supply step. When performing alternately, for example, the pressure in the processing chamber 201 during evacuation is set to a value lower than the pressure in the source gas supply step, for example, 1 to 100 Pa, preferably 1 to 30 Pa. However, the pressure in the processing chamber 201 during carrier gas purging is set to a higher value than the pressure in the source gas supply step, for example, 1 to 1500 Pa, preferably 30 to 130 Pa. By alternately performing vacuum evacuation and carrier gas purge, it is possible to improve the removal efficiency of residual gas.

(Reaction gas supply step)
The valve 324 is opened to allow oxygen-containing gas to flow into the gas supply pipe 320 as a reaction gas. The oxygen-containing gas that has flowed through the gas supply pipe 320 is supplied into the processing chamber 201 from the gas supply hole 420a of the nozzle 420. At this time, the valve 524 is simultaneously opened to allow the carrier gas to flow into the gas supply pipe 520. The carrier gas flowing through the gas supply pipe 520 is adjusted in flow rate by the MFC 522, is supplied together with the oxygen-containing gas into the processing chamber 201, and is exhausted from the exhaust pipe 231. At this time, in order to prevent oxygen-containing gas from entering the nozzle 410, the valves 514 and 516 are opened to allow the carrier gas to flow into the gas supply pipe 510. The carrier gas is supplied into the processing chamber 201 via the gas supply pipe 510 and the nozzle 410, and is exhausted from the exhaust pipe 231.

When flowing oxygen-containing gas, the APC valve 243 is adjusted appropriately to maintain the pressure in the processing chamber 201 within a range of, for example, 1 to 1200 Pa, preferably 10 to 100 Pa, more preferably 30 to 50 Pa (a predetermined value). ) Pressure. If the pressure is higher than 1200 Pa, the residual gas removal described below may not be performed sufficiently, and if the pressure is lower than 1 Pa, a sufficient film formation rate may not be obtained.

The supply flow rate of the oxygen-containing gas is, for example, a (predetermined) flow rate within the range of 0.1 to 40 slm, preferably 0.2 to 20 slm, and more preferably 0.2 to 10 slm. A higher flow rate is preferable since it is possible to reduce the incorporation of impurities derived from the source gas into the metal oxide film, but if the flow rate is higher than 40 slm, residual gas removal, which will be described later, may not be performed sufficiently.

The carrier gas supply flow rates controlled by the MFCs 512 and 522 are each set to a (predetermined) flow rate within the range of 0.2 to 30 slm, for example. The gas supply time (irradiation time) for supplying the oxygen-containing gas to the wafer 200 is, for example, a (predetermined) time within a range of 1 to 60 seconds.

At this time, the gases flowing into the processing chamber 201 are only the oxygen-containing gas and the carrier gas. The oxygen-containing gas reacts with the metal-containing layer formed on the wafer 200 in the source gas supply step, and a metal-containing oxide layer is formed on the wafer 200.

(Residual gas removal step)
After the metal-containing oxide layer is formed, valve 324 is closed to stop the supply of oxygen-containing gas. Then, the unreacted oxygen-containing gas remaining in the processing chamber 201 or the oxygen-containing gas that has contributed to the formation of the metal-containing oxide layer is removed from the processing chamber 201 by the same processing procedure as the residual gas removal step after the raw material gas supply step. . Another point is that vacuum evacuation and carrier (inert) gas purge may be performed simultaneously, or vacuum evacuation and carrier gas purge may be performed alternately (cyclically) a predetermined number of times. Similar to the removal step.

(Implemented a specified number of times)
As shown in FIG. 5, by performing the cycle of sequentially performing the above-described raw material gas supply step, residual gas removal step, reaction gas supply step, and residual gas supply step one or more times (a predetermined number of times), the raw material gas supply step , residual gas removal step, reaction gas supply step, and residual gas supply step are considered as one cycle, and by performing these processes for n ₁ cycles (n ₁ is an integer of 1 or more), a predetermined pattern is formed on the wafer 200. A metal oxide film with a thickness of (for example, 0.05 to 100 nm) is formed.

(Purge and return to atmospheric pressure)
Valves 514, 516, 524, and 526 are opened, and inert gas is supplied into the processing chamber 201 from the gas supply pipes 510 and 520, respectively, and exhausted from the exhaust pipe 231. The inert gas acts as a purge gas, whereby the inside of the processing chamber 201 is purged with the inert gas, and gases and byproducts remaining in the processing chamber 201 are removed from the inside of the processing chamber 201 (purge). Thereafter, the atmosphere inside the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure inside the processing chamber 201 is returned to normal pressure (atmospheric pressure return).

(Boat unloading and wafer discharge)
Thereafter, the seal cap 219 is lowered by the boat elevator 115, and the lower end of the reaction tube 203 is opened. Then, the processed wafer 200 is carried out from the lower end of the reaction tube 203 to the outside of the reaction tube 203 while being supported by the boat 217 (boat unloading). Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge).

(First configuration example around the carburetor)
FIG. 6 shows a first configuration example around a vaporizer (tank 610) which is a gas supply device. In addition to the gas supply pipes 310 and 530 already described, a raw material supply pipe 710 for supplying a liquid raw material is connected to the tank 610. The raw material supply pipe 710 is equipped with a liquid raw material container 721 that stores the liquid raw material, as well as a mechanism for cleaning the raw material supply pipe 710 when replacing the tank 610.

The raw material supply pipe 710 is provided with valves 711, 713, 715, 716, and 717 in order from upstream. The raw material supply pipe 710 is configured such that at least a portion downstream of the valve 711 is configured so that it is easy to pass a liquid raw material or a cleaning solvent that is a liquid for cleaning the inside of the pipe, or to easily purge a vaporized cleaning solvent that will be described later. It is arranged perpendicularly to the tank 610. The valve 711 is a valve that controls the supply operation (supply/non-supply, supply/supply stop) of inert gas to the raw material supply pipe 710. The valve 713 is a valve that controls the supply operation of the inert gas or the cleaning solvent contained in the cleaning solvent container 720 to the raw material supply pipe 710. Valve 713 is connected to cleaning solvent container 720 via valve 712 that controls the operation of supplying cleaning solvent to raw material supply pipe 710 . For example, hexane can be used as a cleaning solvent. Since the liquid raw material has a low vapor pressure and it is difficult to vaporize the remaining liquid raw material and discharge it from the raw material supply pipe 710, it is dissolved in a cleaning solvent and discharged. In addition to hexane, ECH (epichlorohydrin) and the like can be used.

The valve 715 is a valve that controls the supply operation of the inert gas to the raw material supply pipe 710, the cleaning solvent contained in the cleaning solvent container 720, or the liquid raw material contained in the liquid raw material container. The valve 715 is connected to the liquid raw material container 721 via a valve 714 that controls the operation of supplying the liquid raw material to the raw material supply pipe 710 .

The valve 716 is a valve (three-way valve) that switches between the raw material supply pipe 710 on the tank 610 side and the bypass pipe 718. A vacuum pump 722 is connected to the bypass pipe 718. An exhaust pipe 719 is connected to the vacuum pump 722. The bypass pipe 718 is provided with a pressure sensor 724 that measures the pressure inside the bypass pipe. Note that the vacuum pump 722 can be used in common with the vacuum pump 246 that evacuates the processing chamber 201.

The valve 717 is a valve that controls the supply operation of the liquid raw material in the raw material supply pipe 710 to the tank 610, and has a flow rate control function. Furthermore, a heater 723 as a heating section is provided in the section of the raw material supply pipe 710 between the valve 715 and the valve 717. The heater 723 has the ability to heat the raw material supply pipe 710 to a temperature that vaporizes the cleaning solvent (for example, 60° C. in the case of hexane). As will be described later, in order to vaporize the cleaning solvent and discharge it from the raw material supply pipe 710 through the bypass piping 718, the heater 723 can also heat the bypass piping 718 so that the cleaning solvent does not condense in the bypass piping 718. You can leave it there.

Normally, the valves 711, 712, 713 are closed, and the valves 714, 715, 716 (on the raw material supply pipe 710 side), 717 are opened, so that the liquid raw material contained in the liquid raw material container 721 is supplied to the tank 610. . The supplied liquid raw material is vaporized in the tank 610, and substrate processing is performed.

When replacing the tank 610, it is necessary to clean the raw material supply pipe 710 prior to replacement. Liquid raw materials may remain in the raw material supply pipe 710 from the valve 715 to the tank 610 and the valves 715, 716, and 717, and this is to remove these and replace the tank 610 appropriately. For example, when using TDMAT, which will be described later, as the liquid raw material, if the by-product reacts with the atmosphere and adheres to the raw material supply pipe 710, it will cause foreign matter to be generated. It is necessary to remove the liquid material remaining in the valve.

FIG. 7 shows a cleaning flow for the raw material supply pipe 710 in the first configuration example. Cleaning of the raw material supply pipe 710 is executed by the CPU 121a as one of the control programs.

S10: Supply the cleaning solvent from the cleaning solvent container 720 to the raw material supply pipe 710 with the valves 711, 714, and 717 closed and the valves 712, 713, 715, and 716 (on the raw material supply pipe 710 side) opened.

S11: After supplying a predetermined volume of the cleaning solvent, close the valve 713 and seal the cleaning solvent between the valves 715 and 717 (packing). By filling the raw material supply pipe 710 with the cleaning solvent for a predetermined period of time, the liquid raw material remaining on the inner wall of the raw material supply pipe dissolves into the cleaning solvent.

S12: After a predetermined period of time has elapsed, the valve 717 is opened and the cleaning solvent containing the dissolved liquid raw material is discharged into the tank 610.

S13: Determine whether steps S10 to S12 have been executed a predetermined number of times, and after repeating the predetermined number of times, proceed to step S14. The number of repetitions is determined to be five times, for example, as the number of times that the remaining liquid raw material can be sufficiently removed.

S14: The valve 717 is closed, and the raw material supply pipe 710 is heated by the heater 723 to a predetermined temperature at which the cleaning solvent is vaporized.

S15: The cleaning solvent is vaporized in step S14, and inert gas is supplied from upstream of the raw material supply pipe 710 with the valves 711, 713, 715, 716 (bypass pipe 718 side) open. The cleaning medium vaporized by the pressure is exhausted from an exhaust pipe 719 via a bypass pipe 718. During this period, the pressure inside the bypass pipe 718 is measured by the pressure sensor 724, and when the rate of change in pressure becomes less than a predetermined value, it is determined that the cleaning solvent has been discharged from the raw material supply pipe 710, and the inert gas is supplied. end.

Through the above cleaning flow, cleaning of the raw material supply pipe 710 is completed, and the tank 610 can be replaced.

(Second configuration example around the carburetor)
FIG. 8 shows a second configuration example around a vaporizer (tank 610) which is a gas supply device. The difference from the first configuration example is that a drain container 810 is provided as a destination for discharging the cleaning solvent containing the dissolved liquid raw material. Components that are the same as those in the first configuration example shown in FIG. 6 are denoted by the same reference numerals, and redundant explanation will be omitted. A discharge pipe 805 connected to the drain container 810 is provided with a valve that controls the discharge operation (discharge/non-discharge, discharge/discharge stop) of the cleaning solvent containing the liquid raw material dissolved from the raw material supply pipe 710 into the drain container 810. 801 is provided, and a discharge pipe 805 is connected to the raw material supply pipe 710 via a valve 802. The discharge pipe 805 is provided at an angle so that horizontal portions and sharp bends are reduced, and more preferably, the discharge pipe 805 is arranged at a predetermined degree of inclination or more without using bends of 90 degrees or more.

Normally, the valves 711, 712, 713, 801 are closed, and the valves 714, 715, 802, 716 (raw material supply pipe 710 side), 717 are opened, so that the liquid raw material contained in the liquid raw material container 721 is transferred to the tank 610. supplied to The supplied liquid raw material is vaporized in the tank 610 and used for substrate processing.

The cleaning flow for the raw material supply pipe 710 in the second configuration example is also the same as that in FIG. 7 .

S10: Supply cleaning solvent from cleaning solvent container 720 to raw material supply pipe 710 with valves 711, 714, 801, 717 closed and valves 712, 713, 715, 802, 716 (raw material supply pipe 710 side) open. do.

S11: Same as in the first configuration example.

S12: After a predetermined period of time has elapsed, the valve 801 is opened and the cleaning solvent containing the dissolved liquid raw material is discharged into the drain container 810 via the discharge pipe 805. After draining the cleaning solvent, valve 801 is closed.

S13: Same as in the first configuration example.

S14: The raw material supply pipe 710 is heated by the heater 723 to a predetermined temperature at which the cleaning solvent is vaporized.

S15: The cleaning solvent is vaporized in step S14, and inert gas is supplied from upstream of the raw material supply pipe 710 with the valves 711, 713, 715, 802, and 716 (bypass pipe 718 side) open. The cleaning medium vaporized by the pressure of the active gas is exhausted from an exhaust pipe 719 via a bypass pipe 718 . During this period, the pressure inside the bypass pipe 718 is measured by the pressure sensor 724, and when the rate of change in pressure becomes less than a predetermined value, it is determined that the cleaning solvent has been discharged from the raw material supply pipe 710, and the inert gas is supplied. end.

Through the above cleaning flow, cleaning of the raw material supply pipe 710 is completed, and the tank 610 can be replaced.

Note that in the second configuration example, the explanation has been made with a configuration in which the valve 801 is provided in the raw material supply pipe, but the valve 717 is a three-way valve, and the discharge pipe 805 connected to the drain container 810 is connected to this three-way valve. However, the discharge pipe 805 may be provided with a valve 801 that controls the discharge operation of the cleaning solvent containing the liquid raw material dissolved from the raw material supply pipe 710 to the drain container 810.

The embodiments described above can be used in combination as appropriate. Furthermore, the present disclosure is not limited to the above-described embodiments, and various changes can be made without departing from the gist thereof.

In the above-described embodiment, a case was described in which a metal oxide film was formed using a metal element, but the present invention is also applicable to other films as long as they are formed using organic raw materials. For example, zirconium oxide film (ZrO ₂ ), hafnium oxide film (HfO ₂ ), aluminum oxide film (Al ₂ O ₃ ), tungsten oxide film (WO ₃ ), titanium oxide film (TiO), tantalum oxide film (Ta ₂ O ₅ ) etc.

Examples of the organic raw material gas include chlorotri(N-ethylmethylamino)titanium (Ti[N(CH ₃ )CH ₂ CH ₃ ] ₃ Cl, abbreviated as TIA), tetrakisdiethylaminotitanium (Ti[N(CH ₂ CH _{3 )} ) ₂ ] ₄ , abbreviation TDEAT), tetrakisdimethylamino titanium (Ti[N(CH ₃ ) ₂ ] ₄ , abbreviation TDMAT), tetrakisethylmethylamino zirconium (Zr[N(CH ₃ )CH ₂ CH ₃ ] ₄ , abbreviation TEMAZ), tetrakisethylmethylaminohafnium (Hf[ _{N(CH3)CH2CH3]4, abbreviation TEMAH), trimethylaluminum ((CH3)3Al ) , abbreviation TMA )} , bis(tert-butylimino)bis (tert-butylamino)tungsten ((C4H9NH) _{2W ( C4H9N ) 2} ,), tungsten hexacarbonyl ₍ W(CO) ₆ ), pentaethoxytantalum (Ta _{( OC2H5} )) It is also possible to use trisethylmethylamino tertiary butylimino tantalum (Ta[ _{NC(CH3)3][N(C2H5)CH3]3 , abbreviation TBTEMT ) , etc.}

The reactive gas includes oxygen-containing gases such as plasma-excited oxygen (O ₂ ), ozone (O ₃ ), water vapor (H ₂ O), hydrogen peroxide (H ₂ O ₂ ), and nitrous oxide (N _{2 )} . It is also possible to use a mixed gas of O ₂ +H ₂ excited by plasma, etc.

Further, in the above-described embodiment, as the inert gas, a rare gas such as N ₂ gas, Ar gas, He gas, Ne gas, or Xe gas may be used.

Further, the base film on which the metal oxide film is formed can be selected as appropriate, and examples thereof include a silicon (Si) film.

In the above-described embodiment, the substrate processing apparatus is a batch-type vertical apparatus that processes a plurality of substrates at once, and a nozzle for supplying processing gas is installed in one reaction tube, Although an example in which a film is formed using a processing furnace having a structure in which an exhaust port is provided at the bottom has been described, the present disclosure is also applicable to a case where a film is formed using a processing furnace having another structure. For example, if there are two reaction tubes with concentric cross sections (the outer reaction tube is called the outer tube and the inner reaction tube is called the inner tube), the side wall of the outer tube is The present disclosure is also applicable to the case of film formation using a processing furnace having a structure in which processing gas flows to an exhaust port that is opened at a position facing the nozzle (a position symmetrical to the line) with the substrate in between. Furthermore, the processing gas may be supplied from a gas supply port opened in the side wall of the inner tube, instead of being supplied from a nozzle provided upright within the inner tube. At this time, the exhaust port opening to the outer tube may be opened depending on the height of the plurality of substrates stacked and housed in the processing chamber. Moreover, the shape of the exhaust port may be a hole shape or a slit shape.

Recipes (programs that describe processing procedures, processing conditions, etc.) used for film formation processing and cleaning processing include processing details (type of film to be formed or removed, composition ratio, film quality, film thickness, processing procedure, processing It is preferable to prepare them individually according to the conditions (such as conditions, etc.) and store them in the storage device 121c via a telecommunications line or the external storage device 123. Then, when starting the process, it is preferable that the CPU 121a appropriately selects an appropriate recipe from among the plurality of recipes stored in the storage device 121c according to the content of the process. This makes it possible to form films with a variety of film types, composition ratios, film qualities, and film thicknesses with good reproducibility using a single substrate processing device, making it possible to perform appropriate processing in each case. It becomes like this. Further, the burden on the operator (the burden of inputting processing procedures, processing conditions, etc.) can be reduced, and processing can be started quickly while avoiding operational errors.

The above-mentioned recipe is not limited to being newly created, but may be prepared by, for example, modifying an existing recipe that has already been installed in the substrate processing apparatus. When changing a recipe, the changed recipe may be installed in the substrate processing apparatus via a telecommunications line or a recording medium on which the recipe is recorded. Alternatively, the input/output device 122 provided in the existing substrate processing apparatus may be operated to directly change an existing recipe already installed in the substrate processing apparatus.

In the embodiments described above, an example was described in which a film is formed using a batch-type substrate processing apparatus that processes a plurality of substrates at once. The present disclosure is not limited to the above-described embodiments, and can be suitably applied, for example, to a case where a film is formed using a single-wafer type substrate processing apparatus that processes one or several substrates at a time. Furthermore, in the embodiments described above, an example was described in which a film is formed using a substrate processing apparatus having a hot wall type processing furnace. The present disclosure is not limited to the above-described embodiments, and can be suitably applied to a case where a film is formed using a substrate processing apparatus having a cold wall type processing furnace. Even in these cases, the processing procedure and processing conditions can be, for example, the same processing procedure and processing conditions as in the above-described embodiment.

DESCRIPTION OF SYMBOLS 10... Substrate processing apparatus, 121... Controller, 200... Wafer, 201... Processing chamber, 202... Processing furnace.

Claims (22)

a processing chamber for processing the substrate;
a gas supply system that supplies raw material gas into the processing chamber;
The gas supply system includes:
a tank that vaporizes a liquid raw material to generate the raw material gas;
a raw material supply pipe that supplies the liquid raw material to the tank;
a cleaning solvent container containing a cleaning solvent for cleaning the raw material supply pipe;
The raw material supply pipe includes, in order from upstream,
a first valve that controls the operation of supplying inert gas to the raw material supply pipe;
a second valve that controls the supply operation of the inert gas or the cleaning solvent to the raw material supply pipe;
a third valve that controls the supply operation of the inert gas, the cleaning solvent, or the liquid raw material to the raw material supply pipe;
a fourth valve that controls the supply operation of the liquid raw material in the raw material supply pipe to the tank ;
In the substrate processing apparatus , at least a portion downstream of the first valve of the raw material supply pipe is arranged perpendicularly to the tank . bypass piping,
a fifth valve provided between the third valve and the fourth valve of the raw material supply pipe to switch between the bypass pipe and the raw material supply pipe on the tank side,
The substrate processing apparatus according to claim 1, wherein the bypass piping is connected to a pump. The substrate processing apparatus according to claim 1 or 2, further comprising a heating section in a section between the third valve and the fourth valve of the raw material supply pipe. The substrate processing apparatus according to claim 3 , wherein the heating section heats the raw material supply pipe to a temperature that vaporizes the cleaning solvent. The substrate processing apparatus according to any one of claims 1 to 4, further comprising a discharge pipe connected to a drain container from which the cleaning solvent in the raw material supply pipe is discharged. 6. The substrate processing according to claim 5 , further comprising a sixth valve provided between the third valve and the fourth valve of the raw material supply pipe and controlling the discharge operation of the cleaning solvent in the discharge pipe. Device. a processing chamber for processing the substrate;
a gas supply system that supplies raw material gas into the processing chamber;
The gas supply system includes:
a tank that vaporizes a liquid raw material to generate the raw material gas;
a raw material supply pipe that supplies the liquid raw material to the tank;
a cleaning solvent container containing a cleaning solvent for cleaning the raw material supply pipe;
Bypass piping connected to the pump,
A pressure sensor provided in the bypass piping and measuring the pressure of the bypass piping,
The raw material supply pipe includes, in order from upstream,
a first valve that controls the operation of supplying inert gas to the raw material supply pipe;
a second valve that controls the supply operation of the inert gas or the cleaning solvent to the raw material supply pipe;
a third valve that controls the supply operation of the inert gas, the cleaning solvent, or the liquid raw material to the raw material supply pipe;
a fourth valve that controls the supply operation of the liquid raw material in the raw material supply pipe to the tank;
A substrate processing apparatus provided with a fifth valve that is provided between the third valve and the fourth valve of the raw material supply pipe and switches between the bypass pipe and the raw material supply pipe on the tank side. . 8. The method according to claim 7 , further comprising a control unit capable of controlling the supply of the inert gas to be stopped when a rate of variation in the pressure of the bypass piping measured by the pressure sensor becomes equal to or less than a predetermined value. Substrate processing equipment. A tank that vaporizes liquid raw material to generate raw material gas,
a raw material supply pipe that supplies the liquid raw material to the tank;
a cleaning solvent container containing a cleaning solvent for cleaning the raw material supply pipe;
The raw material supply pipe includes, in order from upstream, a first valve that controls an operation of supplying an inert gas to the raw material supply pipe, and a first valve that controls an operation of supplying the inert gas or the cleaning solvent to the raw material supply pipe. a third valve that controls the supply operation of the inert gas, the cleaning solvent, or the liquid raw material to the raw material supply pipe; and the liquid in the raw material supply pipe to the tank. A fourth valve for controlling the raw material supply operation is provided ,
At least a downstream portion of the raw material supply pipe from the first valve is arranged perpendicularly to the tank . A tank that vaporizes liquid raw material to generate raw material gas,
a raw material supply pipe that supplies the liquid raw material to the tank;
a cleaning solvent container containing a cleaning solvent for cleaning the raw material supply pipe;
Bypass piping connected to the pump,
A pressure sensor provided in the bypass piping and measuring the pressure of the bypass piping,
The raw material supply pipe includes, in order from upstream, a first valve that controls an operation of supplying an inert gas to the raw material supply pipe, and a first valve that controls an operation of supplying the inert gas or the cleaning solvent to the raw material supply pipe. a third valve that controls the supply operation of the inert gas, the cleaning solvent, or the liquid raw material to the raw material supply pipe; and the liquid in the raw material supply pipe to the tank. A fourth valve that controls a raw material supply operation is provided between the third valve and the fourth valve of the raw material supply pipe, and connects the bypass pipe and the raw material supply pipe on the tank side. A gas supply device provided with a fifth switching valve. The gas supply system includes a processing chamber for processing a substrate, and a gas supply system for supplying raw material gas into the processing chamber, and the gas supply system includes a tank for vaporizing a liquid raw material to generate the raw material gas, and a tank for generating the raw material gas by vaporizing a liquid raw material. a raw material supply pipe for supplying the raw material to the tank, and a cleaning solvent container for accommodating a cleaning solvent for cleaning the raw material supply pipe, and the raw material supply pipe includes, in order from upstream, inert gas to the raw material supply pipe. a first valve that controls a gas supply operation, a second valve that controls a supply operation of the inert gas or the cleaning solvent to the raw material supply pipe, and the inert gas to the raw material supply pipe; A third valve that controls the supply operation of the cleaning solvent or the liquid raw material; and a fourth valve that controls the supply operation of the liquid raw material in the raw material supply pipe to the tank; a first step of supplying the cleaning solvent to the raw material supply pipe of the substrate processing apparatus , in which at least a portion of the supply pipe downstream of the first valve is arranged perpendicularly to the tank;
a second step of sealing the cleaning solvent in the raw material supply pipe and dissolving the liquid raw material remaining in the raw material supply pipe;
A method for cleaning a raw material supply pipe, comprising: a third step of discharging the cleaning solvent containing the liquid raw material from the raw material supply pipe. A heating section is provided for a section between the third valve and the fourth valve of the raw material supply pipe,
a fourth step of heating the raw material supply pipe to vaporize the cleaning solvent;
The method for cleaning a raw material supply pipe according to claim 11, further comprising a fifth step of exhausting the vaporized cleaning solvent from the raw material supply pipe. The method for cleaning a raw material supply pipe according to claim 12, wherein the fourth step is performed after repeating the first to third steps a predetermined number of times. The method for cleaning a raw material supply pipe according to any one of claims 11 to 13, wherein in the first step, the cleaning solvent is supplied to the raw material supply pipe from upstream of the liquid raw material. A bypass pipe is connected to the raw material supply pipe,
The method for cleaning a raw material supply pipe according to claim 12, wherein in the fifth step, the vaporized cleaning solvent is exhausted through the bypass pipe by the pressure of the inert gas supplied to the raw material supply pipe. . The gas supply system includes a processing chamber for processing a substrate, and a gas supply system for supplying raw material gas into the processing chamber, and the gas supply system includes a tank for vaporizing a liquid raw material to generate the raw material gas, and a tank for generating the raw material gas by vaporizing a liquid raw material. a raw material supply pipe for supplying the raw material to the tank, a cleaning solvent container containing a cleaning solvent for cleaning the raw material supply pipe, a bypass pipe connected to the pump, and a pipe provided in the bypass pipe to control the pressure of the bypass pipe. The raw material supply pipe includes, in order from upstream, a first valve that controls the operation of supplying inert gas to the raw material supply pipe, and a first valve that controls the supply of inert gas to the raw material supply pipe. a second valve that controls the supply operation of the gas or the cleaning solvent; a third valve that controls the supply operation of the inert gas, the cleaning solvent, or the liquid raw material to the raw material supply pipe; and the tank. a fourth valve that controls the supply operation of the liquid raw material in the raw material supply pipe to the raw material supply pipe; and a fourth valve that is provided between the third valve and the fourth valve of the raw material supply pipe, and is provided between the bypass pipe and the a first step of supplying the cleaning solvent to the raw material supply pipe of the substrate processing apparatus, which is provided with a fifth valve that switches between the raw material supply pipe on the tank side and the raw material supply pipe on the tank side;
a second step of sealing the cleaning solvent in the raw material supply pipe and dissolving the liquid raw material remaining in the raw material supply pipe;
A method for cleaning a raw material supply pipe, comprising: a third step of discharging the cleaning solvent containing the liquid raw material from the raw material supply pipe. The gas supply system includes a processing chamber for processing a substrate, and a gas supply system for supplying raw material gas into the processing chamber, and the gas supply system includes a tank for vaporizing a liquid raw material to generate the raw material gas, and a tank for generating the raw material gas by vaporizing a liquid raw material. a raw material supply pipe for supplying the raw material to the tank, and a cleaning solvent container for accommodating a cleaning solvent for cleaning the raw material supply pipe, and the raw material supply pipe includes, in order from upstream, inert gas to the raw material supply pipe. a first valve that controls a gas supply operation, a second valve that controls a supply operation of the inert gas or the cleaning solvent to the raw material supply pipe, and the inert gas to the raw material supply pipe; A third valve that controls the supply operation of the cleaning solvent or the liquid raw material; and a fourth valve that controls the supply operation of the liquid raw material in the raw material supply pipe to the tank; A step of transporting the substrate into the processing chamber of the substrate processing apparatus, in which at least a downstream portion of the supply pipe from the first valve is arranged perpendicularly to the tank;
A method for manufacturing a semiconductor device , comprising the step of processing the substrate. The gas supply system includes a processing chamber for processing a substrate, and a gas supply system for supplying raw material gas into the processing chamber, and the gas supply system includes a tank for vaporizing a liquid raw material to generate the raw material gas, and a tank for generating the raw material gas by vaporizing a liquid raw material. a raw material supply pipe for supplying the raw material to the tank, a cleaning solvent container containing a cleaning solvent for cleaning the raw material supply pipe, a bypass pipe connected to the pump, and a pipe provided in the bypass pipe to control the pressure of the bypass pipe. The raw material supply pipe includes, in order from upstream, a first valve that controls the operation of supplying inert gas to the raw material supply pipe, and a first valve that controls the supply of inert gas to the raw material supply pipe. a second valve that controls the supply operation of the gas or the cleaning solvent; a third valve that controls the supply operation of the inert gas, the cleaning solvent, or the liquid raw material to the raw material supply pipe; and the tank. a fourth valve that controls the supply operation of the liquid raw material in the raw material supply pipe to the raw material supply pipe; and a fourth valve that is provided between the third valve and the fourth valve of the raw material supply pipe, and is provided between the bypass pipe and the a step of transporting the substrate into the processing chamber of the substrate processing apparatus, which is provided with a fifth valve that switches between the material supply pipe and the raw material supply pipe on the tank side;
A method for manufacturing a semiconductor device, comprising the step of processing the substrate. The gas supply system includes a processing chamber for processing a substrate, and a gas supply system for supplying raw material gas into the processing chamber, and the gas supply system includes a tank for vaporizing a liquid raw material to generate the raw material gas, and a tank for generating the raw material gas by vaporizing a liquid raw material. a raw material supply pipe for supplying the raw material to the tank, and a cleaning solvent container for accommodating a cleaning solvent for cleaning the raw material supply pipe, and the raw material supply pipe includes, in order from upstream, inert gas to the raw material supply pipe. a first valve that controls a gas supply operation, a second valve that controls a supply operation of the inert gas or the cleaning solvent to the raw material supply pipe, and the inert gas to the raw material supply pipe; A third valve that controls the supply operation of the cleaning solvent or the liquid raw material; and a fourth valve that controls the supply operation of the liquid raw material in the raw material supply pipe to the tank; A step of transporting the substrate into the processing chamber of the substrate processing apparatus, in which at least a portion downstream of the first valve of the supply pipe is arranged perpendicularly to the tank;
A program that causes a computer to cause the substrate processing apparatus to execute steps for processing the substrate . The gas supply system includes a processing chamber for processing a substrate, and a gas supply system for supplying raw material gas into the processing chamber, and the gas supply system includes a tank for vaporizing a liquid raw material to generate the raw material gas, and a tank for generating the raw material gas by vaporizing a liquid raw material. a raw material supply pipe for supplying the raw material to the tank, a cleaning solvent container containing a cleaning solvent for cleaning the raw material supply pipe, a bypass pipe connected to the pump, and a pipe provided in the bypass pipe to control the pressure of the bypass pipe. The raw material supply pipe includes, in order from upstream, a first valve that controls the operation of supplying inert gas to the raw material supply pipe, and a first valve that controls the supply of inert gas to the raw material supply pipe. a second valve that controls the supply operation of the gas or the cleaning solvent; a third valve that controls the supply operation of the inert gas, the cleaning solvent, or the liquid raw material to the raw material supply pipe; and the tank. a fourth valve that controls the supply operation of the liquid raw material in the raw material supply pipe to the raw material supply pipe; and a fourth valve that is provided between the third valve and the fourth valve of the raw material supply pipe, and is provided between the bypass pipe and the a step of transporting the substrate into the processing chamber of the substrate processing apparatus, which is provided with a fifth valve for switching the raw material supply pipe on the tank side;
A program that causes a computer to cause the substrate processing apparatus to execute steps for processing the substrate. A tank for vaporizing a liquid raw material to generate raw material gas, a raw material supply pipe for supplying the liquid raw material to the tank, and a cleaning solvent container for accommodating a cleaning solvent for cleaning the raw material supply pipe, The supply pipe includes, in order from upstream, a first valve that controls the supply operation of the inert gas to the raw material supply pipe, and a first valve that controls the supply operation of the inert gas or the cleaning solvent to the raw material supply pipe. a second valve; a third valve that controls the supply operation of the inert gas, the cleaning solvent, or the liquid raw material to the raw material supply pipe; and a third valve that controls the supply operation of the inert gas, the cleaning solvent, or the liquid raw material to the raw material supply pipe; a fourth valve that controls a supply operation, and at least a downstream portion of the raw material supply pipe than the first valve is arranged perpendicularly to the tank. a first step of supplying said wash solvent to a tube;
a second step of sealing the cleaning solvent in the raw material supply pipe and dissolving the liquid raw material remaining in the raw material supply pipe;
and a third procedure for discharging the cleaning solvent containing the liquid raw material from the raw material supply pipe. A tank that vaporizes a liquid raw material to generate raw material gas, a raw material supply pipe that supplies the liquid raw material to the tank, a cleaning solvent container that contains a cleaning solvent that cleans the raw material supply pipe, and is connected to a pump. The raw material supply pipe includes a bypass pipe and a pressure sensor provided in the bypass pipe to measure the pressure of the bypass pipe, and the raw material supply pipe is configured to supply an inert gas to the raw material supply pipe in order from upstream. a first valve to control, a second valve to control the supply operation of the inert gas or the cleaning solvent to the raw material supply pipe, and a second valve to control the supply operation of the inert gas or the cleaning solvent to the raw material supply pipe, or a third valve that controls the supply operation of the liquid raw material; a fourth valve that controls the supply operation of the liquid raw material in the raw material supply pipe to the tank; and the third valve of the raw material supply pipe; supplying the cleaning solvent to the raw material supply pipe of a gas supply device that is provided with a fifth valve that is provided between the fourth valve and switches between the bypass pipe and the raw material supply pipe on the tank side; The first step is to
a second step of sealing the cleaning solvent in the raw material supply pipe and dissolving the liquid raw material remaining in the raw material supply pipe;
and a third procedure for discharging the cleaning solvent containing the liquid raw material from the raw material supply pipe.

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