JP7211627B2 - Pattern measurement device, method and program, and pattern inspection device, method and program - Google Patents

Description

Embodiments of the present invention relate to techniques for measuring patterns and inspecting the measured patterns.

In the manufacture of semiconductor devices, processing margins are getting smaller and smaller with miniaturization. For this reason, it is important to confirm whether an object finely patterned by a processing device such as an exposure device is processed within a predetermined range.

A critical dimension-scanning electron microscope (CD-SEM) is used for line width control in the manufacturing process of semiconductor integrated circuits. A CD-SEM has a function of measuring the line width of a linear pattern at a specified position, the diameter of a contact hole, and the like using a profile (line profile). For example, in order to manage stepper exposure conditions using a CD-SEM, lengths are measured at several locations in several shots on several wafers for each lot.

In the manufacturing process of semiconductor integrated circuits, not only the line width but also the shrinkage of the wiring end and the position of the isolated pattern are important control items. can only be measured. Therefore, complex pattern shapes of actual devices are manually inspected by an operator using images acquired from a CD-SEM or other microscopes.

Pattern inspection is important both in the sampling inspection in the manufacturing process and in the prototype stage. Especially in the prototype stage, it is ideal to inspect all the patterns formed on the wafer, but in reality, sampling is performed by experts or simulations. In addition, inspection methods for patterns other than simple linear patterns and contact holes are manually managed by skilled workers.

In Patent Document 1, before pattern inspection, an operator needs to set a set of inspection parameters called recipe data. Specifically, the operator needs to input parameters for design data retrieval, image acquisition parameters, and edge detection and inspection parameters. As a parameter for this edge detection and inspection, the operator needs to pre-specify a local line width (for example, minimum line width).

Japanese Patent No. 4943304

However, specifying the local line width is based on the pattern inspection system operator's rule of thumb. Therefore, there is a problem that the accuracy of the pattern inspection apparatus depends on the operator's long experience.

The present invention has been completed through intensive research focusing on such problems, and its object is to measure a pattern and inspect the measured pattern without relying on the rule of thumb of the operator of the pattern inspection apparatus. It is to provide the technology to

In order to solve the above problems, a first invention is a pattern inspection apparatus for inspecting a plurality of types of patterns formed on an object, comprising: an input unit for inputting image data of the object; a contour extracting unit for extracting the contours of the plurality of types of patterns from the image data, a calculating unit for calculating quantified data of the contours from the extracted contours, and converting the digitized data of the contours into digitized contours of recipes and a comparison unit for comparing with data.

A second aspect of the invention is a pattern inspection method for inspecting a plurality of types of patterns formed on an object, wherein image data of the object is input, and outlines of the plurality of types of patterns are obtained from the image data of the object. is extracted, digitized data of the outline is calculated from the extracted outline, and the digitized data of the outline is compared with the digitized outline data of the recipe.

A third aspect of the invention is a pattern inspection program for inspecting a plurality of types of patterns formed on an object, comprising: inputting image data of the object; a step of extracting the outline of the recipe; a step of calculating numerical data of the outline from the extracted outline; and a step of comparing the numerical data of the outline with the numerical outline data of the recipe. A pattern inspection program.

A fourth aspect of the invention is a pattern measuring apparatus for measuring a plurality of types of patterns formed on an object, comprising: an input unit for inputting image data of the object; The pattern measuring apparatus includes an outline extracting section that extracts an outline of a pattern, and a calculation section that calculates numerical data of the outline from the extracted outline.

A fifth aspect of the invention is a pattern measuring method for measuring a plurality of types of patterns formed on an object, wherein image data of the object is input, and outlines of the plurality of types of patterns are obtained from the image data of the object. is extracted, and digitized data of the outline is calculated from the extracted outline.

A sixth aspect of the invention is a pattern measurement program for measuring a plurality of types of patterns formed on an object, comprising: inputting image data of the object; and a step of calculating digitized data of the contour from the extracted contour.

According to the present invention, it is possible to provide a technique for measuring a pattern and inspecting the measured pattern without relying on the rule of thumb of the operator of the pattern inspection apparatus.

1 is a schematic configuration diagram of a semiconductor manufacturing system including a pattern inspection apparatus according to an embodiment of the present invention; FIG. 4 is a flow chart relating to (a) a recipe data creation method and (b) a measurement method according to an embodiment of the present invention; It is a figure which shows an example of (a) an input image and (b) extracted outline which concerns on embodiment of this invention. FIG. 5 is a diagram showing changes in pattern images of a plurality of reference samples with different focal positions and exposure amounts according to the embodiment of the present invention; FIG. 5 is a diagram comparing contours extracted from images with a focal position of 0 nm and an exposure amount of −8% and +8% in FIG. 4 ; FIG. 5 is a diagram comparing outlines extracted from images with an exposure amount of 0% and a focal position of −40 nm and 0 nm in FIG. 4 ; FIG. 5 is a diagram comparing outlines extracted from images with an exposure amount of 0% and a focal position of +40 nm and 0 nm in FIG. 4 ; FIG. 4 is a diagram (part 1) for explaining the process margin of photolithography according to the embodiment of the present invention; FIG. 2 is a diagram (part 2) for explaining the process margin of photolithography according to the embodiment of the present invention;

An embodiment of the present invention will be described with reference to the drawings. Here, the same reference numerals are given to the common parts in each figure, and redundant explanations are omitted.

[A. Overview of this embodiment]
FIG. 1 is a schematic configuration diagram of a semiconductor manufacturing system including a pattern inspection apparatus according to this embodiment. A semiconductor manufacturing system 100 includes an exposure device 200 , a central processing device 300 , and a shape measuring device 400 . Each device is connected by a wired or wireless communication network. The central processing unit 300 corresponds to the pattern inspection device according to this embodiment.

The semiconductor manufacturing system 100 is an example to which the pattern inspection apparatus according to this embodiment is applied. The pattern inspection apparatus according to this embodiment can be applied to, for example, a mask manufacturing system, an FPD (Flat Panel Display) manufacturing system, a printed circuit board manufacturing system, and the like.

The exposure apparatus 200 uses optical lithography technology to transfer a pattern onto an object (such as a material film). In the case of a semiconductor manufacturing system that requires microfabrication, a stepper that projects a reduced reticle is used as an exposure device to expose a pattern formed on a reticle mask onto a resist coated on an object (semiconductor wafer). The exposure apparatus 200 corresponds to a processing apparatus that performs pattern processing on an object according to this embodiment.

The central processing unit 300 corresponds to the pattern inspection device according to this embodiment. The central processing unit 300 obtains correction values for the process conditions of the exposure apparatus 200 from the pattern inspection results, and outputs the correction values for the process conditions to the exposure apparatus 200 . Also, part or all of the functions of the pattern inspection device may be provided in the shape measurement device 400 described later.

The shape measuring device 400 is a dimensional scanning electron microscope (CD-SEM), and a three-dimensional image of a resist pattern formed on a wafer using an exposure device 200 that exposes a resist applied on a wafer through a mask. Get shape information. The shape measuring device 400 corresponds to a measuring device that measures a plurality of types of pattern measurement data according to this embodiment. Here, the object to be measured is not limited to a resist pattern, and may be a pattern after etching, and is not limited to semiconductor manufacturing, but is used to form a pattern (process) on an object such as mask manufacturing, FPD manufacturing, and printed circuit board manufacturing. Anything is fine.

Here, a case where the shape measuring apparatus 400 has the function of the pattern measuring apparatus among the functions of the pattern inspecting apparatus will be described. In FIG. 1, the pattern measuring device 410 is provided in the shape measuring device 400 and communicates with the central processing unit 300 as a pattern inspection device. Image data of an object on which a plurality of types of patterns are formed by the exposure device 200 is used as the measurement data. Also, although the exposure device 200 and the shape measurement device 400 are directly connected to the central processing unit 300, they are not limited to this. For example, they may be indirectly connected via a factory management system or the like.

A central processing unit (hereinafter referred to as “pattern inspection device”) 300 and a pattern measurement device 410 are pattern inspection devices for inspecting patterns processed on an object, and include an input unit, an image alignment processing unit, an outline extraction unit, an outline It has functional blocks such as an alignment processing unit, an outline digitization unit, a comparison unit, and an output unit.

Here, the pattern measuring device 410 has functional blocks of an input section, an image alignment processing section, an outline extraction section, an outline alignment processing section, and an outline quantification section. The pattern inspection device 300 comprises the remaining comparison section and output section. Then, a case where the pattern measuring device 410 and the pattern inspecting device 300 are communicating will be described. The input unit inputs the image data of the pattern-processed object.

The image alignment processing unit extracts a pattern (for example, a unique pattern) suitable for alignment (mutual position adjustment) from the input image data of the object. Also, in the case of a CD-SEM, since the image is not so large, it is possible to align (position) the entire image.

Furthermore, the image alignment processor may have a function of correcting image distortion of the CD-SEM. When correcting image distortion, alignment is performed in each of a plurality of regions of the image, and distortion correction coefficients are obtained. Alignment may be included in this distortion correction factor.

Here, the image alignment processing unit is not essential for this embodiment, and a location suitable for alignment may be extracted when creating recipe data, which will be described later. Further, when the external shape digitizing unit (to be described later) obtains the pattern area, especially when the target pattern does not protrude outside the image, the alignment may be omitted.

The outline extracting section extracts outline data (outline image data) of a plurality of types of patterns from the positioned image data. The outline alignment processing section extracts a pattern suitable for alignment (for example, a unique pattern) from outline image data.

Since the locations of alignment are different between image-based alignment and outline-based alignment, only one of them may be performed. Also, when alignment is performed using an image, it may be performed with coarse (rough) precision, and when alignment is performed with respect to the outer shape, it may be performed with fine (fine) precision. Thus, the contour alignment processor is not essential to this embodiment.

When the alignment is performed by the outer shape, the vector obtained by adding the difference vectors between the respective points of the outer shape to be paired should be set to zero. It should be noted that, in such a method, it is also possible to perform correction by an external shape quantifying unit, which will be described later, without performing alignment using the external shape.

The contour quantification unit obtains contour quantified data (area, perimeter, etc.) from the contour image data. The comparison unit compares the quantified outline data of the recipe with the quantified outline data of the object. Also, the comparison unit may compare different processing conditions.

The output unit outputs the result of the comparison. Moreover, the pattern inspection apparatus 300 has a storage unit that stores the outer shape digitized data of the recipe. Note that the pattern inspection apparatus 300 may further include a display section for displaying the comparison result.

The pattern inspection device 300 and the pattern measurement device 410 are functional blocks, and are not limited to being implemented in hardware, but may be implemented in a computer as software such as a program, and the form of implementation is not limited. For example, it may be installed and implemented on a dedicated server connected to a client terminal such as a personal computer and a wired or wireless communication line (Internet line, etc.), or may be implemented using a so-called cloud service. good.

[B. Pattern inspection method]
FIG. 2 is a flow chart relating to (a) recipe data creation method and (b) measurement method according to the present embodiment.

(b1. Description of flow chart of recipe data creation method)
FIG. 2(a) is a flow chart of a recipe data creation method. Here, the recipe data is an inspection parameter or the like of numerical data (area, perimeter, etc.) of the outer shape acquired from the image data of the pattern acquired in advance. In addition, recipe data includes image acquisition conditions (accelerating voltage, beam current, magnification, number of images to be accumulated, image acquisition position, etc.) and subsequent image processing conditions (preprocessing conditions, alignment conditions, contour extraction conditions, target patterns, and quantification conditions). etc.) may be included.

The pre-obtained pattern is a pattern processed with the same mask as the object (wafer) for pattern inspection. Moreover, it may be a pattern of another wafer on which the same pattern processing has been performed. Another wafer may be patterned for samples or may be one of multiple wafers patterned within the same lot.

In S110, the input unit inputs the image data of the pattern obtained in advance. This pattern image becomes a reference sample. FIG. 3(a) shows an example of an input CD-SEM image. Also, the input unit may perform filter processing such as noise removal on the input image data.

FIG. 4 is a diagram showing changes in pattern images for a plurality of reference samples formed on an FEM (Focus Exposure Matrix) wafer with different focus positions and exposure amounts. The horizontal axis of this figure represents the focal position of the exposure apparatus 200, and the vertical axis represents the amount of exposure. A plurality of input image patterns measured in advance at the ratio shown in the figure are displayed. Here, the number of focal positions, exposure amounts, etc. is referred to as the number of types of exposure processing conditions. In FIG. 4, a focal position of ±0 nm and an exposure amount of ±0% are set as references (central conditions).

In the case of FIG. 4, the number of processing condition types is two (focus position and exposure amount). In addition, five exposure conditions (−8%, −4%, ±0%, +4%, +8%) and five focal position conditions (−40 nm, −20 nm, ±0 nm, +20 nm, +40 nm), the total number of processing conditions is 25. Thus, it is possible to input data of a plurality of image patterns according to the exposure processing conditions (focus position and exposure amount) of the exposure device 200 .

In S120, the contour extracting unit extracts contour (contour) image data of a two-dimensional shape from the input image data (two-dimensional shape) using an edge detection method or the like. As an edge detection method, a primary differential method (Sobel filter), a secondary differential method (Laplacian filter), a Canny method, or the like may be used. FIG. 3(b) shows outline image data extracted from the CD-SEM image data of FIG. 3(a).

In S130, the outline digitizing section obtains digitized data of the outline (area, perimeter, etc.) from the extracted outline image data. In S140, the determined area and perimeter are saved as recipe data. This area and/or perimeter corresponds to an inspection parameter. In this way, the quantified data of the outer shape of the recipe includes the measured value (central value) at the time of recipe creation, the value obtained by adding the allowable error to the measured value at the time of recipe creation (control value managed by the range from the central value), and the simulation value, or a design allowable value.

The peripheral length of the outer shape means the outer peripheral length. In addition, the area of the outer shape is effective when comparing the increase or decrease of the area from the recipe pattern (which may be called a reference pattern). Furthermore, as an inspection parameter, instead of the perimeter and area of the outer shape of the pattern, the average value of the measured values of multiple types of line widths and/or hole diameters (that is, multiple types of patterns) unique to the pattern is used. Also good. A weighted average value may also be used. The weighting may be set based on, for example, the width of the critical dimension area, the degree of importance or tolerance of the pattern obtained from simulation or design, and the like. Furthermore, statistics obtained from measured values may be used.

Also, the plurality of line widths unique to the pattern may be a plurality of types of line widths. In this way, in this embodiment, a plurality of line widths, that is, a plurality of types of line width dimension measurement values are used. Width of wiring and spacing between adjacent wirings) and multiple contact hole arrays are measured. In addition, when there are only uniform L/S and contact holes of the same shape, it is desirable to include contact holes with different L/S and surrounding patterns (arrangement of contact holes) of the contact holes. For example, the ends of the array may be included rather than only the central portion of the contact hole array. The multiple types here include cases where the peripheral patterns are different even if the dimensions are the same.

In the storage step of S140, the storage unit can store recipe data obtained from one or more wafers. For a plurality of wafers pattern-processed in the same lot by the measurement method shown in FIG. it becomes possible to

Also, as recipe data, processing conditions of the exposure apparatus such as the focus position and the exposure amount may be stored in addition to the digitized data of the outer shape.

(Explanation of flow chart of b2. measurement method)
FIG. 2(b) is a flow chart of the measurement method creation method. In S210, similarly to S110, the input unit inputs the image data of the pattern of the object to be measured.

In S220, the image alignment processing unit aligns the pattern image from the input image data. In S230, as in S120, the contour extracting unit extracts two-dimensional shape contour image data from the input image data.

In S240, the outline alignment processing unit aligns the outline from the outline image data. In S250, the contour digitization unit obtains contour digitized data from the extracted contour image data.

In S260, the comparison unit compares the contour quantified data of the object to be measured with the recipe data based on the alignment result data of S220 and/or S240. Here, the quantified outline data are numerical data representing measured values such as line widths and hole diameters, pattern outlines, and outline features calculated therefrom. The pattern outline can generally be expressed as a polygon, and the coordinates of the vertices of this polygon are used as outline numerical data. Since the pattern contour includes alignment information, it is also possible to correct other contour digitized data.

Specifically, the recipe data (outer shape and reference measurement values) saved in the saving step of S140 of the recipe data creation method described with reference to FIG. At the time of readout, the recipe data may be aligned with the digitized outline data of the object to be measured. Correction based on the alignment results and reflection in outline extraction can be done by shifting both the recipe data and the digitized outline data of the object to be measured by half, or by shifting only one of them. should correct or adjust the object to be measured.

Here, comparison may be made with images of reference samples created under a plurality of stored conditions and external shape quantified data. Alternatively, the closest reference sample may be extracted from among a plurality of reference samples, or a comparison with each of the plurality of reference samples or a degree of matching may be obtained.

In S270, the output unit outputs the comparison result. By superimposing the compared external shape quantified data on the external shape data, even a non-skilled operator of the pattern inspection apparatus can easily judge the result of the comparison, unlike the superimposition of the solid pattern data.

(b3. Explanation of comparison results)
FIG. 5 is a diagram showing changes in outline extracted when the amount of exposure is changed. FIG. 4(a) is a diagram in which a total of two patterns of external shape quantified data are superimposed when the exposure amount is changed by ±8% from the reference (central condition) in FIG. Specifically, the difference portion of the outline of ±8% is blacked out. Alternatively, the difference may be color-coded for output.

FIG. 2(b) is an enlarged view of the square portion surrounded by the solid line in FIG. 2(a). 510 refers to the inner line of the filled part and represents the outline for the +8% case. 520 refers to the outer line of the filled portion and represents the outline for the -8% case. At 530, it can be visually seen that the pattern (wiring pattern in this case) is interrupted in the case of +8% (inside line of 510).

FIG. 6 is a diagram showing changes in outline extracted when the focus position is changed to a negative value. FIG. 4(a) is a diagram in which two patterns of external shape quantified data are superimposed when the focal position is changed from 0 nm, which is the reference (center condition) in FIG. 4, to −40 nm.

FIG. 2(b) is an enlarged view of the square portion surrounded by the solid line in FIG. 2(a). 610 refers to the line inside the filled area and represents the outline for −40 nm. 620 refers to the outer line of the filled part and represents the contour at 0 nm. At 630 and 640, it can be visually seen that the pattern (wiring pattern in this case) is interrupted in the case of −40 nm (line inside 610).

FIG. 7 is a diagram showing changes in outline extracted when the focus position is changed to a positive value. FIG. 4(a) is a diagram in which two patterns of external shape quantified data are superimposed when the focal position is changed from 0 nm, which is the reference (center condition) in FIG. 4, to 40 nm.

FIG. 2(b) is an enlarged view of the square portion surrounded by the solid line in FIG. 2(a). 710 refers to the line inside the filled part and represents the contour for 40 nm. 720 refers to the outer line of the filled part and represents the contour at 0 nm. At 730, it can be visually seen that the pattern (wiring pattern in this case) is interrupted in the case of 40 nm (line inside 710). In addition, it can be seen visually that the pattern of this portion (the wiring pattern on the upper side) is likely to disconnect when 740 is 40 nm (the inner line of 710).

8 and 9 are diagrams for explaining the process margin of optical lithography. FIG. 8A shows the case of local line width dimension control (±3%) as in the case of the pattern measuring apparatus used in the conventional pattern inspection apparatus. Here, a case is shown in which the line width of the wiring pattern indicated by 810 in FIG. FIG. 8(b) shows the wiring pattern and the measurement points of the line width. FIG. 9A shows the case of area control (±3%) in this embodiment. FIG. 9B shows the case of total dimension control (±3%) in this embodiment. Here, the total dimension means the sum or average of the dimensions of all the measurement points of the line width shown in FIG. 8(b). Here, all the measurement points are the line width of the wiring pattern in FIG. 8B, and are the 82 points enclosed by the elongated rectangle (for example, "G113" indicated by 810).

In FIG. 8A, the horizontal axis indicates the focal position, and the vertical axis indicates the exposure amount. If it is inside the triangle that descends to the right (the focal position descends in the positive direction), the dimensions of all the above measurement points are ±10% of the dimensions of the central condition of the exposure amount and the focal position (the center of FIG. 4). indicates that it fits in

FIG. 8(a) is a diagram for explaining the case where the dimension is controlled by the local line width (810), which is often performed conventionally. 810 is the wiring width of the central portion of the L/S, which is conventionally often used, and is specified as "G113". Thus, conventional pattern line width measurement is part of the pattern contour and corresponds to partial extraction of a predetermined contour.

820 indicates the line width near the end of the L/S wiring. 830 denotes an isolated horizontal wiring pattern (no adjacent wiring). 840 indicates the measurement of the dimension of the line width of the wiring pattern in the vertical direction. 850 indicates the line width on the root side of the wiring pattern. 860 indicates the line width of the central portion of the wiring pattern. 870 indicates the line width near the tip of the wiring pattern. Although the design dimensions of these line widths are the same, since the peripheral patterns of each portion are different, it can be regarded as a plurality of types of line widths.

Thus, in this embodiment, a plurality of types of line widths are measured, and dimension control using these line widths is performed as total dimension control. That is, the measurement of multiple types of patterns (here, multiple types of line widths) is included in the extraction of the outline of the pattern and the calculation of the numerical data of the outline. The outline extraction unit that extracts outlines of a plurality of types of patterns and the calculation unit that calculates numerical data of outlines described in the present embodiment perform 1) measurement of the perimeter of the outline, and 2) measurement of the area of the outline. or 3) partially extracting the outline of each of the plurality of types of patterns.

The focus position and exposure should be set to the area inside this triangle. The area inside this triangle is called a process window (permissible range of exposure processing conditions).

FIG. 8A shows two upwardly convex curves. Between these two curves is the region where the measured value of the line width of "810" is the median value (35 nm in this embodiment) of the process conditioning ±3%.

If the exposure dose is controlled by the local line width measurement value of "810" as in the conventional pattern measurement device, even if the line width measurement value can be controlled within ±3%, the focal position will be Since the entire ±3% region must be within the process window, the focal position must be controlled within the range of 12.9 nm enclosed by the vertical line.

FIG. 9A shows a case where the total area of 11 patterns (numbers are given to the left of the patterns) in FIG. In this case, the focal position can be controlled within a range of 15.7 nm, and the allowable focal position range is wider than that of the conventional pattern inspection method, thereby stabilizing the exposure process.

FIG. 9B shows the case where the average value of the line widths at all 82 points in FIG. In this case, the focal position should be controlled within a range of 29.5 nm, and the allowable focal position range is wider than in the case of FIG. 9A, and the exposure process is stabilized.

[C. Action effect]
As described above, according to this embodiment, patterns can be measured and the measured patterns can be inspected without relying on the rule of thumb of the operator of the pattern inspection apparatus. It is also possible to control the process conditions of the pattern processed on the object of the pattern inspection apparatus. Specifically, the pattern inspection apparatus 300 can adjust the exposure conditions of the exposure apparatus 200 within the range of the process window obtained in FIG.

Although the embodiments of the present invention have been described above, two or more of these embodiments may be combined for implementation. Alternatively, one of these embodiments may be partially implemented.

Moreover, the present invention is by no means limited to the description of the embodiments of the present invention. Various modifications are also included in the present invention within the scope of those skilled in the art without departing from the description of the claims. For example, measurement data of the same portion of an object created under different processing conditions may be obtained, and feature amounts may be extracted from this image.

In addition, the processing conditions targeted by the pattern inspection apparatus according to the present embodiment are not limited to the focal position and the amount of exposure. etc. In addition, if the processing conditions are conditions that cannot be changed within the wafer, such as the film thickness of the thin film formed on the object, the etching processing time, the etching gas flow rate, the etching RF power, etc., a plurality of wafers are processed under different processing conditions. An image for each process condition may be acquired from each wafer. Moreover, the pattern inspection apparatus according to this embodiment is applicable not only to semiconductor wafers, but also to masks (photomasks, EUV masks, etc.), FPDs, interposers, and TSVs (Through-Silicon Vias) printed circuit boards.

100 semiconductor manufacturing system 200 exposure device 300 central processing device (pattern inspection device)
400 shape measuring device (CD-SEM)

Claims (15)

A pattern inspection device for inspecting the contours of multiple types of independent patterns formed on an object,
The outlines of the plurality of types of patterns are outlines of a plurality of patterns having different design dimensions, or outlines of a plurality of patterns having the same design dimensions but different peripheral patterns,
an input unit for inputting image data of the object;
an outline extraction unit that extracts outlines of the plurality of types of patterns from the image data of the object;
An outer shape quantifying unit that obtains measured values of the outer shapes of the plurality of types of patterns from the extracted outer shapes of the plurality of types of patterns, and calculates statistics of the measured values of the outer shapes of the plurality of types of patterns as quantified data of the outer shape. When,
a comparison unit that compares the numerical data of the external shape with the numerical data of the external shape of the recipe;
A pattern inspection device comprising: further comprising a storage unit for storing the outer shape quantified data of the recipe;
The input unit inputs image data of an object to be the recipe,
The outline extraction unit extracts outline image data of the recipe from the image data of the recipe,
2. The pattern inspection apparatus according to claim 1, wherein the contour digitizing section obtains the contour digitized data of the recipe from the contour image data of the recipe. 2. The pattern inspection apparatus according to claim 1, wherein said numerical data uses the area and/or perimeter of said pattern. 2. The pattern inspection apparatus according to claim 1, further comprising an alignment section that extracts a pattern suitable for alignment from image data of said object. A pattern inspection device for inspecting a plurality of types of line widths and/or hole diameters formed on an object,
an input unit for inputting image data of the object;
an extraction unit that extracts the plurality of types of line width and/or hole diameter measurement values from the image data of the object;
an outer shape digitizing unit that calculates statistics of the measured values of the plurality of types of line widths and/or hole diameters as digitized outer shape data;
a comparison unit that compares the numerical data of the external shape with the numerical data of the external shape of the recipe;
A pattern inspection device comprising: A pattern inspection method for inspecting external shapes of a plurality of independent patterns formed on an object, comprising:
The outlines of the plurality of types of patterns are outlines of a plurality of patterns having different design dimensions, or outlines of a plurality of patterns having the same design dimensions but different peripheral patterns,
inputting image data of the object;
extracting the contours of the plurality of types of patterns from the image data of the object;
Obtaining measured values of the outer shapes of the plurality of types of patterns from the extracted outer shapes of the plurality of types of patterns, calculating statistics of the measured values of the outer shapes of the plurality of types of patterns as numerical data of the outer shape ,
A pattern inspection method for comparing the digitized data of the outer shape with the digitized data of the outer shape of a recipe. A pattern inspection method for inspecting a plurality of types of line widths and/or hole diameters formed on an object,
inputting image data of the object;
extracting measured values of the plurality of types of line widths and/or hole diameters from the image data of the object;
Calculate statistics of the measured values of the plurality of types of line widths and / or hole diameters as numerical data of the outer shape,
A pattern inspection method for comparing the digitized data of the outer shape with the digitized data of the outer shape of a recipe. A pattern inspection program for inspecting the contours of multiple types of independent patterns formed on an object,
The outlines of the plurality of types of patterns are outlines of a plurality of patterns having different design dimensions, or outlines of a plurality of patterns having the same design dimensions but different peripheral patterns,
inputting image data of the object;
a step of extracting outlines of the plurality of types of patterns from the image data of the object;
obtaining measured values of the outer shapes of the plurality of types of patterns from the extracted outer shapes of the plurality of types of patterns, and calculating statistics of the measured values of the outer shapes of the plurality of types of patterns as numerical data of the outer shape ;
comparing the quantified data of the contour with the quantified data of the contour of the recipe;
A pattern inspection program that causes a computer to execute A pattern inspection program for inspecting multiple types of line widths and/or hole diameters formed on an object,
inputting image data of the object;
extracting the plurality of types of line width and/or hole diameter measurements from image data of the object;
a step of calculating statistics of the measured values of the plurality of types of line widths and/or hole diameters as numerical data of the outer shape;
comparing the quantified data of the contour with the quantified data of the contour of the recipe;
A pattern inspection program that causes a computer to execute A pattern measuring device for measuring the contours of multiple types of independent patterns formed on an object,
The outlines of the plurality of types of patterns are outlines of a plurality of patterns having different design dimensions, or outlines of a plurality of patterns having the same design dimensions but different peripheral patterns,
an input unit for inputting image data of the object;
an outline extraction unit that extracts outlines of the plurality of types of patterns from the image data of the object ;
An outline quantifying unit for obtaining measured values of the outlines of the plurality of types of patterns from the extracted outlines of the plurality of types of patterns, and calculating statistics of the measured values of the outlines of the plurality of types of patterns as quantified data of the outline. When,
A pattern measuring device comprising: A pattern measuring device for inspecting a plurality of types of line widths and/or hole diameters formed on an object,
an input unit for inputting image data of the object;
an extraction unit that extracts the plurality of types of line width and/or hole diameter measurement values from the image data of the object;
an outer shape digitizing unit that calculates statistics of the measured values of the plurality of types of line widths and/or hole diameters as digitized outer shape data;
A pattern measuring device comprising: A pattern measuring method for measuring outlines of a plurality of independent patterns formed on an object, comprising:
The outlines of the plurality of types of patterns are outlines of a plurality of patterns having different design dimensions, or outlines of a plurality of patterns having the same design dimensions but different peripheral patterns,
inputting image data of the object;
extracting the contours of the plurality of types of patterns from the image data of the object;
A pattern measurement method for obtaining measured values of the outer shapes of the plurality of types of patterns from the extracted outer shapes of the plurality of types of patterns, and calculating statistics of the measured values of the outer shapes of the plurality of types of patterns as numerical data of the outer shape . A pattern measuring method for inspecting a plurality of types of line widths and/or hole diameters formed on an object,
inputting image data of the object;
extracting measured values of the plurality of types of line widths and/or hole diameters from the image data of the object;
A pattern measurement method for calculating statistics of the measured values of the plurality of types of line widths and/or hole diameters as numerical data of the outer shape. A pattern measurement program for measuring contours of multiple types of independent patterns formed on an object,
The plurality of types of patterns are outlines of a plurality of patterns with different design dimensions, or outlines of a plurality of patterns with the same design dimensions but different peripheral patterns,
inputting image data of the object;
a step of extracting outlines of the plurality of types of patterns from the image data of the object;
a step of obtaining measured values of the outer shapes of the plurality of types of patterns from the extracted outer shapes of the plurality of types of patterns, and calculating statistics of the measured values of the outer shapes of the plurality of types of patterns as numerical data of the outer shape ;
A pattern measurement program that causes a computer to execute A pattern inspection program for inspecting multiple types of line widths and/or hole diameters formed on an object,
inputting image data of the object;
extracting the plurality of types of line width and/or hole diameter measurements from image data of the object;
a step of calculating statistics of the measured values of the plurality of types of line widths and/or hole diameters as numerical data of the outer shape;
A pattern measurement program that causes a computer to execute

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