JP7258754B2 - 半導体装置、および半導体装置の作製方法 - Google Patents
半導体装置、および半導体装置の作製方法 Download PDFInfo
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- JP7258754B2 JP7258754B2 JP2019533718A JP2019533718A JP7258754B2 JP 7258754 B2 JP7258754 B2 JP 7258754B2 JP 2019533718 A JP2019533718 A JP 2019533718A JP 2019533718 A JP2019533718 A JP 2019533718A JP 7258754 B2 JP7258754 B2 JP 7258754B2
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Description
以下では、本発明の一態様に係る半導体装置の構成とその特性について説明する。
以下では、先の実施の形態に示すトランジスタの具体的な構成の一例について、図4から図9を用いて説明する。
図4(A)は、本発明の一態様に係るトランジスタ400aの上面図である。また、図4(B)は、図4(A)にA1-A2の一点鎖線で示す部位の断面図である。つまりトランジスタ400aのチャネル長方向の断面図を示す。図4(C)は、図4(A)にA3-A4の一点鎖線で示す部位の断面図である。つまりトランジスタ400aのチャネル幅方向の断面図を示す。図4(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。なお、トランジスタのチャネル長方向とは、基板と水平な面内において、ソース(ソース領域またはソース電極)及びドレイン(ドレイン領域またはドレイン電極)間において、キャリアが移動する方向を意味し、チャネル幅方向は、基板と水平な面内において、チャネル長方向に対して垂直の方向を意味する。
以下では、半導体装置に用いることができる構成材料について説明する。
トランジスタ400aを形成する基板としては、例えば、絶縁体基板、半導体基板または導電体基板を用いればよい。絶縁体基板としては、例えば、ガラス基板、石英基板、サファイア基板、安定化ジルコニア基板(イットリア安定化ジルコニア基板など)、樹脂基板などがある。また、半導体基板としては、例えば、シリコン、ゲルマニウムなどの半導体基板、または炭化シリコン、シリコンゲルマニウム、ヒ化ガリウム、リン化インジウム、酸化亜鉛、酸化ガリウムからなる化合物半導体基板などがある。さらには、前述の半導体基板内部に絶縁体領域を有する半導体基板、例えばSOI(Silicon On Insulator)基板などがある。導電体基板としては、黒鉛基板、金属基板、合金基板、導電性樹脂基板などがある。または、金属の窒化物を有する基板、金属の酸化物を有する基板などがある。さらには、絶縁体基板に導電体または半導体が設けられた基板、半導体基板に導電体または絶縁体が設けられた基板、導電体基板に半導体または絶縁体が設けられた基板などがある。または、これらの基板に素子が設けられたものを用いてもよい。基板に設けられる素子としては、容量素子、抵抗素子、スイッチ素子、発光素子、記憶素子などがある。
トランジスタを、水素などの不純物および酸素の透過を抑制する機能を有する絶縁体で囲うことによって、トランジスタの電気特性を安定にすることができる。例えば絶縁体401、及び絶縁体420として、水素などの不純物および酸素の透過を抑制する機能を有する絶縁体を用いればよい。絶縁体401及び絶縁体420は、絶縁体402などより、水または水素などの不純物が透過しにくい絶縁性材料を用いて形成することが好ましい。
導電体404、導電体310、導電体416a、導電体416b、導電体438a、導電体438bとしては、アルミニウム、クロム、銅、銀、金、白金、タンタル、ニッケル、チタン、モリブデン、タングステン、ハフニウム、バナジウム、ニオブ、マンガン、マグネシウム、ジルコニウム、ベリリウム、インジウムなどから選ばれた金属元素を1種以上含む材料を用いることができる。また、リン等の不純物元素を含有させた多結晶シリコンに代表される、電気伝導度が高い半導体、ニッケルシリサイドなどのシリサイドを用いてもよい。
以下では、本発明の一態様に係る図4に示すトランジスタの作製方法を図5および図6を用いて説明する。図5および図6では、図4(B)に示す一点鎖線A1-A2の断面に対応する断面図と、図4(C)に示す一点鎖線A3-A4の断面に対応する断面図と、を示している。
本実施の形態に示すトランジスタは図4に示すものに限られるものではない。以下では、図7から図9を用いて、本実施の形態に示すトランジスタの変形例について説明する。図7から図9は、図4と同様に、(A)が本発明の一態様に係るトランジスタの上面図である。また、(B)は、(A)にA1-A2の一点鎖線で示す部位の断面図である。また、(C)は、(A)にA3-A4の一点鎖線で示す部位の断面図である。(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。また、以下において、トランジスタ400aと同一の符号を付した構成については、トランジスタ400aの対応する記載を参酌することができる。
本実施の形態では、図10乃至図12を用いて、本発明の一態様に係る、酸化物を半導体に用いたトランジスタ(以下、OSトランジスタと呼ぶ。)、および容量素子が適用されている記憶装置の一例として、NOSRAMについて説明する。NOSRAM(登録商標)とは「Nonvolatile Oxide Semiconductor RAM」の略称であり、ゲインセル型(2T型、3T型)のメモリセルを有するRAMを指す。なお、以下において、NOSRAMのようにOSトランジスタを用いたメモリ装置を、OSメモリと呼ぶ場合がある。
図10にNOSRAMの構成例を示す。図10に示すNOSRAM1600は、メモリセルアレイ1610、コントローラ1640、行ドライバ1650、列ドライバ1660、出力ドライバ1670を有する。なお、NOSRAM1600は、1のメモリセルで多値データを記憶する多値NOSRAMである。
図11(A)はメモリセル1611の構成例を示す回路図である。メモリセル1611は2T型のゲインセルであり、メモリセル1611はワード線WWL、RWL、ビット線BL、ソース線SL、配線BGLに電気的に接続されている。メモリセル1611は、ノードSN、OSトランジスタMO61、トランジスタMP61、容量素子C61を有する。OSトランジスタMO61は書き込みトランジスタである。トランジスタMP61は読み出しトランジスタであり、例えばpチャネル型Siトランジスタで構成される。容量素子C61はノードSNの電圧を保持するための保持容量である。ノードSNはデータの保持ノードであり、ここではトランジスタMP61のゲートに相当する。
本実施の形態では、図13および図14を用いて、本発明の一態様に係る、OSトランジスタ、および容量素子が適用されている記憶装置の一例として、DOSRAMについて説明する。DOSRAM(登録商標)とは、「Dynamic Oxide Semiconductor RAM」の略称であり、1T(トランジスタ)1C(容量)型のメモリセルを有するRAMを指す。DOSRAMも、NOSRAMと同様に、OSメモリが適用されている。
図13にDOSRAMの構成例を示す。図13に示すように、DOSRAM1400は、コントローラ1405、行回路1410、列回路1415、メモリセルおよびセンスアンプアレイ1420(以下、「MC-SAアレイ1420」と呼ぶ。)を有する。
MC-SAアレイ1420は、メモリセルアレイ1422をセンスアンプアレイ1423上に積層した積層構造をもつ。グローバルビット線GBLL、GBLRはメモリセルアレイ1422上に積層されている。DOSRAM1400では、ビット線の構造に、ローカルビット線とグローバルビット線とで階層化された階層ビット線構造が採用されている。
コントローラ1405は、DOSRAM1400の動作全般を制御する機能を有する。コントローラ1405は、外部からの入力されるコマンド信号を論理演算して、動作モードを決定する機能、決定した動作モードが実行されるように、行回路1410、列回路1415の制御信号を生成する機能、外部から入力されるアドレス信号を保持する機能、内部アドレス信号を生成する機能を有する。
行回路1410は、MC-SAアレイ1420を駆動する機能を有する。デコーダ1411はアドレス信号をデコードする機能を有する。ワード線ドライバ回路1412は、アクセス対象行のワード線WLを選択する選択信号を生成する。
列回路1415は、データ信号WDA[31:0]の入力を制御する機能、データ信号RDA[31:0]の出力を制御する機能を有する。データ信号WDA[31:0]は書き込みデータ信号であり、データ信号RDA[31:0]は読み出しデータ信号である。
本実施の形態では、図15から図18を用いて、本発明の一態様に係る、OSトランジスタ、および容量素子が適用されている半導体装置の一例として、FPGA(フィールドプログラマブルゲートアレイ)について説明する。本実施の形態のFPGAは、コンフィギュレーションメモリ、およびレジスタにOSメモリが適用されている。ここでは、このようなFPGAを「OS-FPGA」と呼ぶ。
図15(A)にOS-FPGAの構成例を示す。図15(A)に示すOS-FPGA3110は、マルチコンテキスト構造によるコンテキスト切り替えとPLE毎の細粒度パワーゲーティングを実行するNOFF(ノーマリーオフ)コンピューティングが可能である。OS-FPGA3110は、コントローラ(Controller)3111、ワードドライバ(Word driver)3112、データドライバ(Data driver)3113、プログラマブルエリア(Programmable area)3115を有する。
“H”の信号storeがOS-FF3140に入力されると、シャドウレジスタ3142はFF3141のデータをバックアップする。ノードN36は、ノードQのデータが書き込まれることで、“L”となり、ノードNB36は、ノードQBのデータが書き込まれることで、“H”となる。しかる後、パワーゲーティングが実行され、パワースイッチ3127をオフにする。FF3141のノードQ、QBのデータは消失するが、電源オフであっても、シャドウレジスタ3142はバックアップしたデータを保持する。
パワースイッチ3127をオンにし、PLE3121に電源を供給する。しかる後、“H”の信号loadがOS-FF3140に入力されると、シャドウレジスタ3142はバックアップしているデータをFF3141に書き戻す。ノードN36は“L”であるので、ノードN37は“L”が維持され、ノードNB36は“H”であるので、ノードNB37は“H”となる。よって、ノードQは“H”になり、ノードQBは“L”になる。つまり、OS-FF3140はバックアップ動作時の状態に復帰する。
本実施の形態では、図19を用いて、上記実施の形態に示す半導体装置を適用した、AIシステムについて説明を行う。
<AIシステムの応用例>
本実施の形態では、上記実施の形態に示すAIシステムの応用例について図20を用いて説明を行う。
本実施の形態は、上記実施の形態に示すAIシステムが組み込まれたICの一例を示す。
<電子機器>
本発明の一態様に係る半導体装置は、様々な電子機器に用いることができる。図22乃至図24に、本発明の一態様に係る半導体装置を用いた電子機器の具体例を示す。
Claims (11)
- 基板上に配置された第1の導電体と、
前記第1の導電体の上に配置された第1の絶縁体と、
前記第1の絶縁体の上面に接して配置された第1の酸化物と、
前記第1の酸化物の上面に接して配置された第2の絶縁体と、
前記第2の絶縁体の上に配置された第2の酸化物と、
前記第2の酸化物の上に配置された第3の絶縁体と、
前記第3の絶縁体の上に配置された第2の導電体と、を有し、
前記第1の絶縁体と前記第1の酸化物の間には、混合層が形成され、
前記混合層は、前記第1の絶縁体に含まれる原子の少なくとも一と、前記第1の酸化物に含まれる原子の少なくとも一と、を含み、
前記第1の酸化物はインジウムおよび亜鉛を含み、
前記第1の酸化物に含まれる金属元素におけるインジウムの原子数比は、前記第2の酸化物に含まれる金属元素におけるインジウムの原子数比より小さく、
前記混合層は、負の固定電荷を有する、半導体装置。 - 請求項1において、
前記第1の酸化物はガリウムを含み、
前記第1の酸化物に含まれる金属元素におけるガリウムの原子数比は、前記第2の酸化物に含まれる金属元素におけるガリウムの原子数比より大きい、半導体装置。 - 請求項2において、
前記第1の酸化物は、酸化ガリウムである、半導体装置。 - 請求項1乃至3のいずれか一項において、
前記混合層は、-2.0×1012e/cm2以下の固定電荷を有する、半導体装置。 - 請求項1乃至4のいずれか一項において、
前記第2の絶縁体は、酸化シリコンまたは酸化窒化シリコンである、半導体装置。 - 請求項1乃至5のいずれか一項において、
前記第2の絶縁体は、膜の表面温度を100℃以上700℃以下とする昇温脱離ガス分析法において、単位膜厚当たりの、酸素原子に換算した酸素の脱離量が1.0×1018atoms/cm3以上である、半導体装置。 - 基板上に第1の導電体を形成する工程と、
前記第1の導電体の上に第1の絶縁体を形成する工程と、
前記第1の絶縁体の上面に接して、スパッタリング法を用いて第1の酸化物を形成する工程と、
前記第1の酸化物の上に第2の絶縁体を形成する工程と、
前記第2の絶縁体の上に、スパッタリング法を用いて第2の酸化物を形成する工程と、
前記第2の酸化物の上に第3の絶縁体を形成する工程と、
前記第3の絶縁体の上に第2の導電体を形成する工程と、を有し、
前記第1の酸化物の成膜工程において、前記第1の絶縁体と前記第1の酸化物の間に混合層が形成され、
前記第1の酸化物はインジウムおよび亜鉛を含み、
前記第1の酸化物に含まれる金属元素におけるインジウムの原子数比は、前記第2の酸化物に含まれる金属元素におけるインジウムの原子数比より小さく、
前記混合層は、前記第1の絶縁体に含まれる原子の少なくとも一と、前記第1の酸化物に含まれる原子の少なくとも一と、を含む、半導体装置の作製方法。 - 請求項7において、
前記第1の酸化物を形成する工程で、ガリウムを含む第1のターゲットを用いる、半導体装置の作製方法。 - 請求項8において、
前記第2の酸化物を形成する工程で、インジウム、ガリウム、および亜鉛を含む第2のターゲットを用い、
前記第2のターゲットに含まれる金属元素におけるガリウムの原子数比は、前記第1のターゲットに含まれる金属元素におけるガリウムの原子数比より小さい、半導体装置の作製方法。 - 請求項7乃至9のいずれか一項において、
前記第2の酸化物を形成する工程で、酸素を含む雰囲気でスパッタリング法による成膜を行う、半導体装置の作製方法。 - 請求項10において、
前記スパッタリング法による成膜の後で熱処理を行い、
当該熱処理の後で前記第2の酸化物を島状に形成する、半導体装置の作製方法。
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