JP7256939B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP7256939B2 JP7256939B2 JP2018164946A JP2018164946A JP7256939B2 JP 7256939 B2 JP7256939 B2 JP 7256939B2 JP 2018164946 A JP2018164946 A JP 2018164946A JP 2018164946 A JP2018164946 A JP 2018164946A JP 7256939 B2 JP7256939 B2 JP 7256939B2
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- JP
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- Prior art keywords
- resin
- light
- temperature
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/732—Dimensional properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Led Device Packages (AREA)
- Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
- Electroluminescent Light Sources (AREA)
Description
Bの貯蔵弾性率の平均値から85℃の樹脂Bの貯蔵弾性率の平均値への低下率は、30.6%である。樹脂Bにおける平均値の低下率(30.6%)は、樹脂Aにおける平均値の低下率(69.1%)の半分であることがわかる。
α×D=1.65×TM-47.5・・・(2)
20 発光パネル
21,22 基板
23 導体層
23P パッド
23a~23i 導体パターン
24 樹脂層
30 発光素子
31 ベース基板
32 N型半導体層
33 活性層
34 P型半導体層
35,36 パッド
37,38 バンプ
40 フレキシブルケーブル
41 基材
42 カバーレイ
42a 開口部
43 導体層
43a,43b 導体パターン
50 コネクタ
50a 端子
60 補強板
241,242 樹脂シート
Claims (1)
- 光透過性及び可撓性を有し、導電層が形成された第1基板と、
光透過性及び可撓性を有し、前記第1基板に対向して配置される第2基板と、
前記導電層に接続される電極を有し、前記第1基板と前記第2基板の間に配置される複数の発光素子と、
光透過性及び可撓性を有し、前記第1基板及び前記第2基板の間に配置され、複数の前記発光素子を保持する樹脂層と、
を備え、
前記樹脂層を構成する樹脂は、
-50℃における貯蔵弾性率に対する100℃の貯蔵弾性率が-26%以上であり、
湿度が25%~85%の範囲において、25℃のときの貯蔵弾性率の平均値から85℃のときの貯蔵弾性率の平均値への低下率が、30.6%以下であり、
損失弾性率の温度変化は、130℃以上でピークを有し、
動的粘弾性における機械的損失正接tanδが最大となるときのピーク温度tanδmaxが135℃以上、180℃以下であり、前記機械的損失正接tanδのピーク強度が1.01以上であり、
前記機械的損失正接tanδの変化量は、湿度が50%以上、85%以下の範囲で、9.05×10 -03 以下であり、
温度が85℃、湿度が40%以上、85%以下の範囲における膨張率が0.45%以下であり、
温度が85℃、ひずみ量が5.0%における曲げ応力が65.71MPa以上であり、
温度25℃、ひずみ量5.0%における曲げ応力から、温度85℃、ひずみ量5.0%における前記曲げ応力への変化率が-30.8%以より大きい、発光装置。
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