JP7248934B2 - light emitting device - Google Patents

Description

The present invention relates to a method for manufacturing a light emitting device.

Instead of providing a housing for housing the light emitting element, the side and bottom surfaces of the light emitting element are covered with a sealing member containing a reflective material, and plated electrodes are provided in contact with the bottom surface of the bump electrodes of the light emitting element and the bottom surface of the sealing member. A small-sized light-emitting device is known (for example, Patent Document 1).

JP 2012-124443 A

The plating electrode requires time and effort such as providing a mask, and there are many steps for that purpose.

An embodiment of the present invention includes the following configurations.
preparing an intermediate comprising a light emitting element having a pair of electrodes on the same surface side and a covering member covering the light emitting element so that a part of the surface of the pair of electrodes is exposed; forming a metal layer continuously covering the electrode and the covering member, and removing a part of the metal layer by irradiating the metal layer with a laser beam to separate it from each other and have an area larger than that of each of the pair of electrodes and forming a pair of external connection electrodes with a large .

As described above, a small light-emitting device can be easily obtained.

FIG. 1A is a schematic oblique view of a light-emitting device according to an embodiment, viewed obliquely from above. FIG. 1B is a schematic perspective view of the light-emitting device according to the embodiment, obliquely below. FIG. 1C is a schematic cross-sectional view taken along line II of FIG. 1A. FIG. 2 is a schematic cross-sectional view for explaining the method for manufacturing the light emitting device according to the embodiment. FIG. 3 is a schematic plan view for explaining the method for manufacturing the light emitting device according to the embodiment. FIG. 4 is a schematic plan view explaining the method for manufacturing the light emitting device according to the embodiment. FIG. 5A is a schematic perspective view of the light-emitting device according to the embodiment, viewed obliquely from above. FIG. 5B is a schematic perspective view of the light-emitting device according to the embodiment, obliquely from below. FIG. 5C is a schematic cross-sectional view along the II-II cross section of FIG. 5A. FIG. 6 is a schematic plan view explaining the method for manufacturing the light emitting device according to the embodiment. FIG. 7 is a schematic plan view explaining the method for manufacturing the light emitting device according to the embodiment. FIG. 8A is a schematic oblique view of the light emitting device according to the embodiment from above. FIG. 8B is a schematic perspective view of the light-emitting device according to the embodiment, obliquely from below; FIG. 8C is a schematic cross-sectional view along the III-III cross section of FIG. 8A. FIG. 9 is a schematic cross-sectional view for explaining the method for manufacturing the light emitting device according to the embodiment. 10A and 10B are schematic plan views for explaining the method for manufacturing the light emitting device according to the embodiment. 11A and 11B are schematic plan views for explaining the method for manufacturing the light emitting device according to the embodiment. FIG. 12A is a schematic oblique view of the light emitting device according to the embodiment from above. FIG. 12B is a schematic perspective view of the light-emitting device according to the embodiment, obliquely from below; FIG. 12C is a schematic cross-sectional view along the IV-IV cross section of FIG. 12A. 13A and 13B are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the embodiment. FIG. 14A is a schematic oblique view of the light emitting device according to the embodiment from above. FIG. 14B is a schematic perspective view of the light-emitting device according to the embodiment, obliquely from below; FIG. 14C is a schematic cross-sectional view along the VV cross section of FIG. 14A. 15A and 15B are schematic cross-sectional views illustrating the method for manufacturing an intermediate according to the embodiment. 16A and 16B are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the embodiment. FIG. 17 is a schematic cross-sectional view of the light emitting device according to the embodiment. 18A and 18B are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the embodiment. FIG. 19 is a schematic cross-sectional view of the light emitting device according to the embodiment. 20A to 20C are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the embodiment. FIG. 21 is a schematic bottom view of the light emitting device according to the embodiment. FIG. 22 is a schematic bottom view of the light emitting device according to the embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail based on the drawings. In the following description, terms indicating specific directions and positions (for example, "upper", "lower", "right", "left", and other terms including those terms) are used as necessary. . These terms are used to facilitate understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meaning of these terms. Also, parts with the same reference numerals appearing in a plurality of drawings indicate the same parts or members. Also, resin members such as the first light-transmitting member, the second light-transmitting member, and the covering member will be described using the same names regardless of whether they are molded, solidified, cured, or singulated. In other words, the same name will be used to describe a member whose state changes depending on the stage of the process, such as when it is liquid before molding, becomes solid after molding, and then divides the solid after molding to change its shape. do.

An embodiment comprises a light emitting element having a pair of electrodes, a covering member covering the light emitting element, and an external connection electrode covered (embedded) in the covering member and connected to the pair of electrodes exposed from the covering member. A method of manufacturing a light emitting device comprising: Specifically, a step of forming a metal layer continuously covering the pair of electrodes and the covering member, and irradiating the metal layer on the covering member between the pair of electrodes with laser light to remove the metal layer, and forming an external connection electrode having a larger area than the electrode of.

By irradiating the metal layer with laser light, laser ablation is caused, thereby removing part of the metal layer on the intermediate. As a result, the metal layer is patterned, and the metal layer can be used as an external connection electrode. Laser ablation is a phenomenon in which the surface of a solid is removed when the irradiation intensity of laser light applied to the surface of the solid exceeds a certain level (threshold value). By using laser ablation, the metal layer can be patterned without using a mask or the like.

<Embodiment 1>
A light-emitting device 1 obtained by the method for manufacturing a light-emitting device according to Embodiment 1 is shown in FIGS. 1A to 1C.
The light-emitting device 1 includes a light-emitting element 10 , a covering member 20 , translucent members 30 and 40 , and an external connection electrode 50 . The light emitting device 10 includes a laminated structure 10a including a semiconductor layer, and a pair of electrodes 10b provided on one surface (lower surface in FIG. 1C) of the laminated structure 10a.

The covering member 20 is provided to cover the lower surface and side surfaces of the light emitting element 10 so that the surfaces of the pair of electrodes 10b are exposed. The covering member 20 can be formed in one or more steps. For the covering member 20 formed in a plurality of steps, the illustration of the boundary lines therebetween may be omitted.

The light-transmitting member includes a first light-transmitting member 30 that covers the top surface of the light-emitting element 10 (the top surface in FIG. 1C and the surface opposite to the surface on which the electrode is formed), and the side surface of the light-emitting element 10 (the top surface in FIG. 1C). and a second translucent member covering the left and right surfaces of the light emitting element. A pair of external connection electrodes 50 are provided so as to be connected to the pair of electrodes 10b of the light emitting element 10, respectively, and have an area larger than the area of the electrodes 10b to which they are connected. In other words, the external connection electrode 50 is provided so as to continuously cover the electrode 10 b of the light emitting element and the covering member 20 .

Such a light emitting device 1 can be formed by the following steps.
(1) a step of preparing an intermediate comprising a light emitting element having a pair of electrodes on the same surface side and a covering member covering the light emitting element so that a part of the surface of the pair of electrodes is exposed;
(2) forming a metal layer that continuously covers the exposed pair of electrodes and the covering member;
(3) a step of irradiating the metal layer with laser light to remove part of the metal layer to form a pair of external connection electrodes separated from each other and having a larger area than each of the pair of electrodes;
including.
Each step will be described in detail below with reference to FIG.

(Step of preparing an intermediate)
As shown in FIG. 2A, an intermediate body 11 including a light emitting element 10 and a covering member 20 is prepared. The light emitting element 10 includes a laminated structure 10a and a pair of electrodes 10b on the same side of the laminated structure 10a. The covering member 20 covers the light emitting element 10 so that the surfaces of the pair of electrodes 10b are partially exposed. One intermediate has a plurality of light emitting elements 10, and each light emitting element is integrally covered with a covering member 20 while being regularly arranged in the vertical and horizontal directions. For convenience of explanation, two light-emitting elements are illustrated in the drawings (for example, FIG. 2) explaining the steps, but the number is not limited to this.

The distance between the light-emitting elements can be appropriately selected depending on the size of the target light-emitting device, the size of the light-emitting elements, and the like. However, since the covering member is cut into individual pieces in a post-process, the width of the cut portion (the width of the cutting blade) and the like are also taken into consideration when arranging.

In addition, in FIG. 2A, the first translucent member 30 is provided on the lower surface of the light emitting element 10 (the surface facing the surface on which the electrodes are formed), and the second translucent member 30 is provided on the left and right side surfaces of the light emitting element 10 . An intermediate body 11 having a material member 40 is illustrated. However, these translucent members are not necessarily required and may be omitted. The intermediate body 11 is placed on the supporting member S1 with the surface on which the electrode 10b is not formed (the surface on which the first translucent member 30 is formed in FIG. 2A) facing each other. .

(Step of forming metal layer)
Next, as shown in FIG. 2B, a metal layer 150 is formed to continuously cover the pair of exposed electrodes 10b and the covering member 20. Next, as shown in FIG. The metal layer 150 is formed by sputtering, vapor deposition, atomic layer deposition (ALD), metal organic chemical vapor deposition (MOCVD), plasma-enhanced chemical vapor deposition (PECVD). ) method, atmospheric pressure plasma deposition method, or the like.

(Step of forming external connection electrodes)
In the first embodiment, the step of forming the external connection electrodes includes a step of irradiating laser light and a step of singulating.

As shown in FIG. 2C, the metal layer 150 is irradiated with laser light. The laser light is applied to the laser light irradiation area L1 between the pair of electrodes of the light emitting element 10 . FIG. 3 shows a plan view of FIG. 2(c). The laser beam irradiation area (thin black portion) L1 includes the coating member 20 not only between the pair of electrodes 10b of the light emitting element but also in the extending direction thereof. Furthermore, the laser light can be continuously applied to a pair of electrodes of the adjacent light-emitting elements. By regularly arranging the light emitting elements 10, it is possible to easily irradiate the laser light continuously between the electrodes of the plurality of light emitting elements.

The irradiation area L1 of the laser light has a width that is substantially the same as the width between the electrodes 10b of the light emitting element. The metal layer 150 is removed from the laser beam irradiation region L1 by laser ablation. As a result, as shown in FIG. 2D, the covering member 20 between the pair of electrodes 10b of the light emitting element is exposed.

The laser beam can be irradiated onto the metal by moving the irradiation spot continuously or step by step on the member. The laser light may be applied continuously or may be applied in pulses. The intensity of the laser beam, the diameter of the irradiation spot, and the moving speed of the irradiation spot are determined in consideration of the thermal conductivity of the coating member and the metal layer, the difference in thermal conductivity, etc., and the metal layer on the coating member undergoes laser ablation. can be set as

As for the wavelength of the laser light, it is preferable to select a wavelength having a low reflectance with respect to the metal layer, for example, a wavelength having a reflectance of 90% or less. For example, when the outermost surface of the metal layer is Au, it is preferable to use a laser with an emission wavelength shorter than the green region (eg, 550 nm) rather than a red region (eg, 640 nm). Thereby, ablation can be efficiently generated, and mass productivity can be improved.

FIG. 4 shows a plan view of FIG. 2(d). In Embodiment 1, since the intermediate 11 including a plurality of light emitting elements 10 is used, as shown in FIGS. Thus, the metal layer 150 is divided between the pair of electrodes 10b of one light emitting element 10, but is continuous with the metal layer 150 covering the electrodes of a plurality of adjacent light emitting elements. . That is, as it is, it does not function as an external connection electrode.

The continuous metal layer 150 and the coating member 20 are separated by cutting between adjacent light emitting elements (cutting lines indicated by dashed lines X in the figure), and the support member S1 is removed, thereby forming the metal layer 150 shown in FIG. ), the light-emitting device 1 having the external connection electrodes 50 can be obtained.

The obtained light-emitting device 1 is provided with the metal layer 150 as the external connection electrode 50 . The external connection electrodes 50 are connected to the pair of electrodes 10b of the light emitting device, respectively, and have a larger area than each of the pair of electrodes 10b. Also, the external connection electrode 50 obtained by cutting the metal layer 150 is formed so as to reach the edge of the bottom surface of the light emitting device 1 , that is, reach the side surface of the light emitting device 1 . As a result, the external connection electrodes 50 can have a wider area.

By using the external connection electrode 50 having a larger area than the electrode 10b of the light emitting element, the light emitting device 1 can be easily mounted. Such a light-emitting device can be easily obtained by the manufacturing method of the first embodiment.

<Modification 1>
5A to 5C show a light-emitting device 2 obtained by the method for manufacturing a light-emitting device according to Modification 1. FIG. Modification 1 is a modification of the step of irradiating a metal layer between a pair of electrodes of a light-emitting element with laser light, and other steps are the same as those of the first embodiment. Modification 1 differs from Embodiment 1 in the width of the irradiation region of the laser light. Specifically, in Embodiment 1, as shown in FIG. 3, the width of the laser light irradiation region L1 is the same as the distance between the electrodes 10b of the light emitting element, whereas in Modification 1, as shown in FIG. Thus, the width W2 of the laser light irradiation region L2 is made wider than the distance W1 between the pair of electrodes 10b of the light emitting element. By irradiating such a region with laser light, as shown in FIG. 7, the metal layer 150 having a width wider than the distance between the electrodes 10b of the light emitting element is removed, and the covering member 20 is formed on the removed portion. can be exposed.

As shown in FIG. 6, the laser light also irradiates the metal layer 150 on part of the electrode 10b of the light emitting element. However, the metal layer 150 on the electrode 10b does not undergo laser ablation even when irradiated with laser light. This is due to the difference in heat dissipation characteristics between the covering member 20 and the electrode 10b of the light emitting element. That is, the electrode 10b is made of metal, and has a high heat dissipation characteristic compared to the covering member 20 whose main component is resin. This is due to the high thermal conductivity properties of the metal itself and, moreover, to the high heat radiation. Then, the laser light to be irradiated is set to an output within a range in which laser ablation occurs in the metal layer 150 on the covering member 20 and laser ablation does not occur in the metal layer 150 on the electrode 10b. , the metal layer 150 can be removed in some parts and remains as the external connection electrodes 50a without being removed. In other words, the region irradiated with the laser light does not match the removed region of the metal layer 150, and the external connection electrode 50a is formed within the region irradiated with the laser light.

In this manner, not only the metal layer 150 on the covering member 20 but also the metal layer 150 on the electrode 10b of the light emitting element is irradiated with laser light to remove the portion, thereby removing the metal layer 150 on the electrode 10b of the light emitting element. The distance between the external connection electrodes 50 can be widened. For example, even if the distance between the pair of electrodes 10b of the light emitting element is small, the distance between the external connection electrodes 50 other than the electrodes 10b of the light emitting element can be increased. As a result, it is possible to reduce the possibility of short-circuiting due to spread of solder when mounting on a secondary substrate or the like. As shown in FIG. 21, when the electrodes 10b of the light-emitting element 10 have different shapes, particularly when the electrodes 10b of the light-emitting element face each other with different shapes, a laser beam is applied to a region including portions having different shapes. By irradiating light, the shape of the external connection electrode 50 can also be made different. For example, as shown in FIG. 21, when the left electrode 10b of the electrodes 10b of the light-emitting element is rectangular, whereas the right electrode 10b is concave in two places in plan view, By irradiating a portion including part or all of the concave portion with laser light, the shape of the external connection electrode 50a can be made to have a shape similar to that of the electrode 10b of the light emitting element. By doing so, the polarity can be easily determined.

22, the external connection electrode is provided with a concave portion 501 recessed inward from the outer peripheral side in a portion located on the outer side of the outer periphery of the lower surface of the light emitting device 1a. may For example, on the bottom surface of the light emitting device 1a, a recess 501 is provided on the side where only one external connection electrode is arranged. Specifically, in the light emitting device 1a shown in FIG. 22, two external connection electrodes 50 are arranged side by side, and the recess 501 is provided on the right side of the external connection electrode 50 arranged on the right side. Similarly, a recess 501 is provided on the left side of the external connection electrode 50 arranged on the left side.

In the concave portions 501 of these external connection electrodes 50 , the covering member 20 is exposed as in the area sandwiched between the two external connection electrodes 50 . As a result, on the lower surface of the light emitting device 1a shown in FIG. 22, one covering member 20 continuous from the upper side to the lower side in the center and two covering members 20 respectively in contact with the right side and the left side are exposed.

By providing such a concave portion 501 in a part of the external connection electrode 50, the area of the external connection electrode in contact with solder or the like is reduced by the amount of the concave portion. Furthermore, by providing the concave portion on the outer surface side of the light emitting device, the length of the external connection electrode arranged near the outer surface can be shortened. That is, by providing the concave portion, a part of the outer circumference of the external connection electrode is arranged at a position spaced apart from the outer surface of the light emitting device. By adopting such a shape, it is possible to easily discharge the gas generated directly under the light emitting element 10 to the outside when the light emitting element 10 is mounted on the secondary substrate using solder or the like. Thereby, voids can be suppressed. In addition, since the secondary substrate and the light emitting device have different coefficients of thermal expansion, the light emitting device may be damaged by thermal shock or temperature cycles. By providing a concave portion in a part of the external connection electrode 50, the area to be joined via solder can be reduced, thereby reducing the stress applied to the joint portion and suppressing breakage of the light emitting device.

In addition, by providing such a concave portion 501 in a part of the external connection electrode 50, it is possible to reduce the portion where the metal film is cut when singulating. This makes it easier to cut. Note that such a concave portion 501 can be formed by irradiating a metal film with a laser beam to cause laser ablation and removing the metal film in that portion.

The size, position, shape, and the like of the recess 501 of the external connection electrode 50 are not particularly limited. For example, in FIG. 22, one recess 501 is provided in the external connection electrode 50 so as to be recessed in a rectangular shape. The number of recesses 501 may be two or more.
Also, the concave portion 501 can have a polygonal shape such as a triangle, a circular shape, an elliptical shape, or a shape that is a combination thereof. Further, in FIG. 22, the concave portion 501 is provided in the center in the vertical direction of FIG. That is, it is provided in the center of one side of the light emitting device. Not limited to this, it may be provided at a position shifted from the center of the side. Moreover, it can be provided on either or both of the two external connection electrodes. Preferably, the recesses 501 are formed in symmetrical positions with the same size and shape.

Such recesses that are recessed from the outer periphery of the external connection electrodes can also be provided in other embodiments.

<Embodiment 2>
A light-emitting device 3 obtained by the method for manufacturing a light-emitting device according to Embodiment 2 is shown in FIGS. 8A to 8C.
9 to 11 show a method for manufacturing a light emitting device according to Embodiment 2. FIG. Embodiment 2 is the same as Embodiment 1 up to the step of forming a metal layer, but differs in the step of forming an external connection electrode. In more detail, the regions to be irradiated with the laser light are defined as between the electrodes 10b of the light-emitting element and at positions to be cut to form the light-emitting device. That is, the metal layers can be made into independent external connection electrodes only by irradiation with laser light. Therefore, the external connection electrodes can be formed without cutting the metal layer in subsequent steps.

The light-emitting device 3 obtained by the manufacturing method of Embodiment 2 differs from the light-emitting device 1 in that the external connection electrode 50 is separated from the side surface of the light-emitting device 3 .

In Embodiment 1, the laser light is applied to the metal layer 150 between the electrodes 10b of the light emitting element and the metal layer 150 on the coating member 20 extending therefrom. That is, in the light-emitting device 1 obtained by the method of Embodiment 1, as shown in FIG. 1B, the covering member 20 is exposed in one belt-like region passing through the center on the bottom surface of the light-emitting device 1 . On the other hand, in the light-emitting device 3 obtained in Embodiment 2, as shown in FIG. It has areas where the covering member 20 has been removed.

Such a light emitting device 3 can be obtained by the method shown in FIG. The intermediate 31 prepared in FIG. 9A and the metal layer 150 shown in FIG. 9B can be the same as those in the first embodiment. Next, as shown in FIG. 9C, the metal layer 150 on the covering member 20 between the electrodes 10b of the light emitting elements and the metal layer 150 on the covering member 20 between the light emitting elements are irradiated with laser light. do. FIG. 10 is a plan view of FIG. 9( c ), in which the laser beam is applied to a laser beam irradiation region L3 including the metal layer 150 between the electrodes 10 b of the light emitting element 10 and the metal layer 150 between the electrodes 10 b of the light emitting element 10 . A laser light irradiation region L4 including a layer is irradiated.

The covering member 20 between the light emitting elements 10 is a portion to be cut when separating into individual pieces later. In Embodiment 2, the metal layer 150 on the covering member 20, which is the planned cutting position, is removed in advance by laser ablation, so that the metal layer 150 is spaced between the adjacent light emitting elements as shown in FIG. can be done. That is, at this point the metal layer is formed to function as an external connection electrode. By separating the metal layers in advance and using them as external connection electrodes in this way, the covering member 20 is present on the cutting line X. As shown in FIG. Therefore, when singulating, only the covering member 20 is cut as shown in FIG. 9(d). As a result, the cutting becomes easier than in the case of cutting the metal layer and the covering member together, and individualized light emitting devices 3 as shown in FIG. 9E can be obtained. In the second and third embodiments, as in the modified example of the first embodiment, the irradiation area of the laser light can be wider than the distance between the electrodes 10b of the light emitting element. .

<Embodiment 3>
A light-emitting device 4 obtained by the method for manufacturing a light-emitting device according to Embodiment 3 is shown in FIGS. 12A to 12C. Embodiment 3 is the same as Embodiment 2 up to the step of forming the metal layer 150. In addition, laser light is applied to the metal layer between the pair of electrodes of the light emitting element and the metal layer between the light emitting elements. is the same as in the second embodiment in terms of irradiating . In Embodiment 2, the portion removed by irradiating the laser beam is the division position of the light emitting device, whereas in Embodiment 3, the metal layer above the light emitting elements is the metal layer at the position not to be divided. are also removed by irradiation with laser light.

As shown in FIG. 12, the light-emitting device 4 has two light-emitting elements 10 . A pair of independent external connection electrodes 50 are provided so that each light emitting element 10 can be driven independently. That is, the light emitting device 4 has two pairs of external connection electrodes 50 .

Such a light-emitting device 4 can be manufactured in the same manner as in the method shown in the second embodiment up to irradiation with laser light. Finally, when the covering member 20 is cut for singulation, the cutting position is set so as to include two pairs of external connection electrodes formed independently of each other, in other words, so as to include two light emitting elements. The light-emitting device 4 can be obtained by cutting the covering member 20 at a suitable position. In addition, it can be cut so as to include three or more light-emitting elements. Also in the second embodiment, as in the modification of the first embodiment, the irradiation area of the laser light can be wider than the distance between the electrodes 10b of the light emitting element.

In addition to providing a light-emitting device having a plurality of light-emitting elements 10, each of which can be independently driven, as in Embodiment 3, two light-emitting elements 10 are connected in series as shown in FIG. It can be a light emitting device 5 . That is, the light emitting device 5 can be configured such that one electrode 10 b of the two light emitting elements 10 is connected to one external connection electrode 50 . In FIG. 13, of the two light emitting elements 10, the external connection electrode 50b straddling the right electrode 10b on the bottom surface of the left light emitting element 10 and the left electrode 10b on the bottom surface of the right light emitting element 10 is provided. there is In the manufacturing process shown in FIG. 13, such a light-emitting device 5 has a continuous external connection to the electrodes 10b of the two light-emitting elements by preventing the laser light from irradiating the metal layer on the covering member between the light-emitting elements. It can be the electrode 50b.

<Embodiment 4>
FIG. 14 shows a light-emitting device 6 obtained by the method for manufacturing a light-emitting device according to the fourth embodiment. 15A and 15B show a method for manufacturing the light emitting device according to the fourth embodiment. The light emitting device 6 includes, as the external connection electrodes 50, an external connection electrode 50c arranged on the lower surface of the light emitting device 6 and an external connection electrode 50d arranged on the side surface of the light emitting device 6, which is a cut surface. The external connection electrodes 50c and 50d are formed continuously.

In Embodiment 4, an intermediate in which the covering member is cut in advance to expose the cut surface of the covering member is used as the intermediate. The cut surface may be a surface exposed by cutting the entire planned cutting position of the covering member, or may be a surface exposed by cutting a part of the covering member at the planned cutting position. As shown in FIG. 15(a), the covering member 20 is cut before the metal layer is formed on the intermediate having the plurality of light emitting elements 10 placed on the supporting member S1. Thereby, as shown in FIG. 15(b), a plurality of intermediate bodies 61 each including one light emitting element are formed. The obtained intermediate bodies 61 are arranged on the supporting member S2 so as to be separated from each other.

Next, a metal layer 150 is formed on the plurality of intermediate bodies 61 on the support member S2. As shown in FIG. 15(c), the metal layer 150 extends continuously over the exposed pair of electrodes 10b and the upper surface (electrode forming surface) of the covering member 20, the side surface of the covering member 20, and the support member S2. formed by CVD, ALD, sputtering, vapor deposition, etc. can be cited as methods for forming a metal layer on the side surfaces of the covering member 20 in this way.

Next, as shown in FIG. 15D, the metal layer 150 between the pair of electrodes 10b and the metal layer 150 on the supporting member S2 are irradiated with laser light. That is, the metal layer 150, which is part of the metal layer 150, is irradiated with a laser beam in a region to be removed. Thereby, as shown in FIG. 15E, the external connection electrodes 50 connected to the pair of electrodes 10b of the light emitting element 10 can be formed.

When the light-emitting elements are arranged in a matrix, for example, it is possible to form an intermediate body that is cut only in the row direction and not cut in the column direction. The light emitting device 6 shown in FIG. 14B has a quadrangular shape in plan view and has four side surfaces. It is composed of a pair of side surfaces on which the external connection electrodes 50d are arranged and a pair of side surfaces on which the external connection electrodes are not arranged. As shown in FIG. 15C, the pair of side surfaces on which the external connection electrodes 50d are arranged are cut surfaces cut before the metal layer 150 is formed. On the other hand, the pair of side surfaces on which the external connection electrodes are not arranged are the surfaces cut after the formation of the metal layer 150 . In this way, by forming an intermediate body in which the covering member is connected without cutting at all the planned cutting positions, it is possible to form the external connection electrodes only on the pair of opposing side surfaces.

However, the present invention is not limited to this, and an intermediate body may be obtained by forming cut surfaces in both the row direction and the column direction, and the external connection electrodes may be formed using the intermediate body. In that case, the metal layer is removed between the electrodes 10b of the light emitting element so as to separate the external connection electrodes as a pair of positive and negative electrodes, and the covering member 20 is exposed. to remove the metal layer. Also in the fourth embodiment, as in the modification of the first embodiment, the irradiation area of the laser light can be wider than the distance between the electrodes 10b of the light emitting element.

The support member S2 may be made of the same material as the support member S1 used for cutting the intermediate, or may be made of a different material. Unlike other embodiments, the support member S2 has a metal layer formed thereon, and the material of the support member S2 can be selected according to the method of removing the metal layer on the support member S2. . For example, in the case of removing by irradiating a laser beam to cause laser ablation in the same manner as the metal layer on the covering member 20, a material having a lower heat radiation property than metal can be used as in the covering member 20. . For example, it is preferable to use a resin member similar to the covering member 20, polyimide, PET, PEN, PES, or the like. Further, when separating the support member S2 and the light emitting device 6, if the metal layer 150 on the support member S2 and the metal layer 150 on the side surface of the light emitting device 6 are to be mechanically separated, a laser beam is applied. You don't have to. In such a case, a metal member can be used as the support member S2 in addition to the resin member described above. Also in the fourth embodiment, as in the modification of the first embodiment, the irradiation area of the laser light can be wider than the distance between the electrodes 10b of the light emitting element.

Constituent members used in each embodiment will be described below.

(Intermediate)
The intermediate includes a light emitting element and a covering member. Furthermore, a translucent member etc. can also be provided.

[Intermediate 11]
FIG. 16 shows a method of manufacturing the intermediate 11 used for forming the light emitting device 1 shown in FIG. 17 and 19 show modified examples of the intermediates, and FIGS. 18 and 20 show their production methods.

16A and 16B are diagrams illustrating a method for manufacturing the intermediate 11 used in the light emitting device 1 shown in FIG. , and a second translucent member 40 that does not contain a wavelength conversion member. Illustrations of support members and the like are omitted.

First, as shown in FIG. 16(a), a plate-like member including a reflective covering member 210 and a first translucent member 30 is prepared. For the covering member 210, for example, a member containing about 60% by weight of silica and white titanium oxide in silicone resin can be used. Furthermore, it can be obtained by a method such as punching to form a plurality of through holes. Furthermore, by forming the first translucent member in the through-hole by a method such as potting, printing, or spraying, a plate-like member including the covering member 210 and the first translucent member 30 is formed. can do.

Next, as shown in FIG. 16B, a liquid second translucent member 40 is applied onto the first translucent member 30 which is a plate-like member. The liquid second translucent members 40 are separated from each other. Each second translucent member 40 can have any shape in plan view corresponding to the shape of the light emitting element 10, and examples thereof include circular, elliptical, square, and rectangular shapes. The interval between the adjacent second translucent members 40 can be appropriately set according to the outer shape of the light emitting device 1 and the number of light emitting devices 1 to be taken. Further, the second translucent member 40 is preferably formed so as to cover approximately 70% to 150% of the area of the first translucent member 30, which is a plate-like member.

Next, as shown in FIG. 16(c), the light-emitting elements 10 are arranged on each of the second translucent members 40. Then, as shown in FIG. When the light emitting element 10 is placed on the liquid second translucent member 40 , the second translucent member 40 creeps up on the side surface of the light emitting element 10 . As a result, the outer surface of the second translucent member 40 is shaped to face obliquely upward. After arranging the light emitting element 10, the light emitting element 10 may be pressed if necessary. After arranging the light emitting element 10 , the liquid second translucent member 40 is heated to form the cured second translucent member 40 .

Although the second translucent member 40 between the light emitting element 10 and the first translucent member 30 is not shown, it exists in the form of a thin film between the light emitting element 10 and the first translucent member 30. It also functions as an adhesive between the plate member and the light emitting element 10 .

Next, as shown in FIG. 16D, a covering member 220 is provided on the upper surface of the plate member to cover the light emitting element 10 and the second translucent member 40 . The covering member 220 is provided so as to integrally cover the plurality of light emitting elements 10 . The covering member 220 can be formed by compression molding, transfer molding, injection molding, printing, spraying, or the like, for example, using a member containing about 60 wt % of silica and white titanium oxide in silicone resin.

After curing the covering member 220, the thickness of the covering member 220 is reduced by a known processing method so that the electrodes 10b of the light emitting element 10 are exposed as shown in FIG. 16(e). Thereby, the intermediate 11 can be obtained.

The manufacturing method described above describes an intermediate body 11 in which the covering member 20 is divided into two parts. That is, the covering member 210 covering the side surface of the first translucent member 30 and the covering member 220 covering the side surface of the light emitting element 10 (specifically, the side surface of the second translucent member) are formed in different processes. there is In addition to forming the covering member 20 in two or more different steps, the covering member may be formed in one step.

[Intermediate 71]
A light-emitting device 7 shown in FIG. 17 is different from the light-emitting device 1 described in Embodiment 1 in that the first translucent member 30 is provided on the entire upper surface of the light-emitting device 7 . 18 shows a method of manufacturing an intermediate 71 for obtaining such a light-emitting device 7. FIG. Note that the illustration of the supporting member is omitted.

The intermediate body 71 includes the light emitting element 10, the covering member 20, the first translucent member 30 including the wavelength converting member, and the second translucent member 40 not including the wavelength converting member.

First, as shown in FIG. 18A, a plate-like first translucent member 30 is prepared. The plate-like first translucent member 30 can be obtained, for example, by forming a liquid first translucent member on a separately prepared plate-like member by printing, spraying, electrodeposition, or the like. Here, the term “plate-like” refers to a member having a large area on which a light-emitting element can be mounted, and may be replaced by terms such as sheet-like, film-like, and layer-like.

After the step of applying the liquid second translucent member 40 on the first translucent member 30, the steps described in the intermediate 11 can be performed in the same manner, and thus the description thereof is omitted here. The formation positions of the liquid second translucent members 40 are formed so as to be spaced apart from each other in consideration of the size of the light emitting device and the like.

Also, although the second translucent member 40 between the light emitting element 10 and the first translucent member 30 is not shown, as with the intermediate body 11, the light emitting element 10 and the first translucent member 30 exists in the form of a thin film.

After curing the covering member 20, the thickness of the covering member 20 is reduced by a known processing method so that the electrodes 10b of the light emitting element 10 are exposed as shown in FIG. 18(e). Thereby, the intermediate 71 can be obtained.

[Intermediate 81]
The light-emitting device 8 shown in FIG. 19 is characterized in that it does not include a light-reflecting covering member, and the first translucent member 30 is provided not only on the upper surface of the light-emitting element but also on the side surface of the light-emitting element. be. That is, the intermediate 81 differs from the other intermediates in that the covering member covering the light emitting element is translucent. FIG. 20 shows a method of manufacturing an intermediate 81 for obtaining such a light-emitting device 8 .

First, as shown in FIG. 20(a), the light emitting element 10 is arranged on the supporting member S1. At this time, the electrode 10b is arranged so as to face the upper surface of the support member S1. Next, as shown in FIG. 20B, the first translucent member 30 (coating member 20) is formed so as to bury the light emitting element 10. Next, as shown in FIG. After that, the intermediate body 81 can be obtained by removing the support member S1. In the intermediate body 81 obtained in this manner, when a material that is easily oxidized is used as the material of the electrode 10b, it is preferable that the surface of the electrode 10b is subjected to a treatment such as grinding after removing the supporting member S1. . For example, when Cu is used as the electrode 10b, the surface may be oxidized through the heating process. In such a case, it is preferable to remove the oxidized surface by grinding or the like to form an intermediate body 81 with Cu exposed, and then form a metal layer.

As the intermediates, in addition to the intermediates 11, 71 and 81 described above, an intermediate obtained by removing the second translucent member from the intermediates 11 and 71 can be used.

(light emitting element)
As the light-emitting element, for example, a semiconductor light-emitting element such as a light-emitting diode can be used, and a light-emitting element capable of emitting visible light such as blue, green, and red light can be used. A semiconductor light-emitting device includes a laminated structure including a light-emitting layer and an electrode. The laminated structure has a surface on which electrodes are formed (electrode-forming surface) and a light extraction surface on the opposite side.

The laminated structure includes a semiconductor layer including a light emitting layer. Furthermore, a translucent substrate such as sapphire may be provided. An example of a semiconductor laminate includes three semiconductor layers of a first conductivity type semiconductor layer (e.g., n-type semiconductor layer), a light emitting layer (active layer), and a second conductivity type semiconductor layer (e.g., p-type semiconductor layer). can be done. The semiconductor layer capable of emitting ultraviolet light and visible light ranging from blue light to green light can be formed of semiconductor materials such as III-V group compound semiconductors, for example.
Specifically, a nitride-based semiconductor material such as In _X Al _Y Ga _1-XY N (0≦X, 0≦Y, X+Y≦1) can be used. GaAs, GaAlAs, GaP, InGaAs, InGaAsP, or the like can be used as a semiconductor laminate capable of emitting red light.

The light-emitting element has a pair of electrodes, and is arranged on the same surface side (electrode formation surface) on the laminated structure. These pair of electrodes may have a single-layer structure or a laminated structure as long as they are ohmic-connected to the laminated structure such that the current-voltage characteristics are linear or substantially linear. Such electrodes can be formed of materials and configurations known in the art and of any thickness. For example, the thickness of the electrode is preferably ten and several μm to 300 μm. Also, as the electrodes, an electrically good conductor can be used, and metals such as Cu are suitable, for example. Various shapes can be selected for the shape of the electrode according to the purpose, application, and the like. For example, as shown in the light emitting device 9 shown in FIG. 21, the electrodes 10b of the light emitting elements can have different shapes.

(metal layer)
The metal layer is mainly a film formed to prevent corrosion and oxidation of the surface of the electrode. A material that is superior in corrosion resistance and oxidation resistance to that of the electrode is selected. For example, the outermost layer is preferably made of a platinum group element metal such as Au or Pt. Also, when the metal layer covers the surface of the light-emitting device to be soldered, it is preferable to use Au, which has good solderability, for the outermost surface.

The metal layer may be composed of only one layer of a single material, or may be composed of laminated layers of different materials. In particular, it is preferable to use a metal layer having a high melting point, and examples thereof include Ru, Mo, Ta, and the like. In addition, by providing these high-melting-point metals between the electrode and the outermost layer of the light-emitting element, it is possible to reduce the diffusion of Sn contained in the solder to the electrode or a layer close to the electrode. It can be a protective layer. Ni/Ru/Au, Ti/Pt/Au and the like are given as examples of laminated structures having such a diffusion barrier layer. Also, the thickness of the diffusion prevention layer (eg, Ru) is preferably about 10 Å to 1000 Å.

Various thicknesses of the metal layer can be selected. The thickness can be set to such a degree that laser ablation can occur selectively. For example, the thickness is preferably 1 μm or less, more preferably 1000 Å or less. Moreover, it is preferable that the thickness be such that the corrosion of the electrode can be reduced, for example, 5 nm or more. Here, the thickness of the metal layer refers to the total thickness of the plurality of layers when the metal layer is formed by laminating a plurality of layers.

(coating member)
The covering member is preferably a resin member containing, for example, a thermosetting resin such as silicone resin, silicone-modified resin, epoxy resin, or phenol resin as a main component.

When the shape of the intermediate body 11, 61, or 71 is used, the covering member is preferably a light-reflective resin member. A light-reflective resin means a resin material having a reflectance of 70% or more with respect to light from a light-emitting element. For example, white resin is preferable. Light that has reached the covering member is reflected and directed toward the light emitting surface of the light emitting device, thereby increasing the light extraction efficiency of the light emitting device. Moreover, in the case of a shape like the intermediate body 81, it is preferable to use a translucent resin member as the covering member. In this case, the coating member can be made of the same material as the translucent member described later.

As the light-reflecting resin, for example, a translucent resin in which a light-reflecting substance is dispersed can be used. Suitable light-reflecting substances include, for example, titanium oxide, silicon oxide, zirconium oxide, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, and mullite. The light-reflecting substance can be used in the form of granules, fibres, flakes, etc. In particular, fibrous substances are preferable because they can be expected to have the effect of lowering the coefficient of thermal expansion of the covering member.

For example, when the covering member 20 is made of a resin member containing a filler such as a light-reflecting substance, the resin component on the surface irradiated with the laser is removed by ablation to expose the filler on the surface. In addition, stripe-shaped grooves are formed in the movement direction by moving the irradiation spot of the laser light continuously or sequentially on the surface. The groove is formed with a width of, for example, about 10 to 100 μm, typically 40 μm, and a depth of 0.1 to 3 μm, depending on the irradiation spot diameter of the laser beam.

(translucent member)
The translucent member is a member that covers the upper surface of the light emitting element (the surface facing the electrode forming surface and serving as the light emitting surface), the side surface of the light emitting element, and the like. A translucent resin, glass, or the like can be used as the translucent material. Translucent resins are particularly preferred, and thermosetting resins such as silicone resins, silicone-modified resins, epoxy resins, and phenol resins, and thermoplastic resins such as polycarbonate resins, acrylic resins, methylpentene resins, and polynorbornene resins can be used. can.
In particular, silicone resins, which are excellent in light resistance and heat resistance, are suitable.

The translucent member may contain a phosphor as a wavelength converting member in addition to the above translucent material.
A phosphor that can be excited by light emitted from a light emitting element is used. For example, phosphors that can be excited by a blue light emitting device or an ultraviolet light emitting device include a cerium-activated yttrium aluminum garnet phosphor (YAG:Ce); a cerium activated lutetium aluminum garnet phosphor (LAG:Ce); nitrogen-containing calcium aluminosilicate phosphor activated with europium and/or chromium (CaO—Al ₂ O ₃ —SiO ₂ ); silicate phosphor activated with europium ((Sr, Ba) ₂ SiO ₄ ); Nitride-based phosphors such as β-sialon phosphors, CASN-based phosphors, and SCASN-based phosphors; KSF-based phosphors (K ₂ SiF ₆ :Mn); Sulfide-based phosphors, quantum dot phosphors etc.
By combining these phosphors with blue light emitting elements or ultraviolet light emitting elements, light emitting devices of various colors (for example, white light emitting devices) can be manufactured.
Further, the translucent member may contain various fillers and the like for the purpose of adjusting the viscosity.

As the light-transmitting member, as shown in FIG. 1C, a first light-transmitting member including a wavelength conversion member is provided on the light-emitting surface of the light-emitting element (the surface facing the surface on which the electrode is formed), and and a second translucent member that does not include a wavelength returning member. In that case, although there is a difference in whether or not the wavelength conversion member is included, as the material, the same translucent material as described above can be used. The translucent material used for the first translucent member and the translucent material used for the second translucent member may be the same material or different materials. Moreover, the phosphors listed above can be used as the wavelength conversion member included in the second translucent member.

Although several embodiments according to the present invention have been exemplified above, it goes without saying that the present invention is not limited to the above-described embodiments, and can be arbitrarily adopted without departing from the gist of the present invention. .
The disclosure content of this specification may include the following aspects.
(Aspect 1)
Preparing an intermediate comprising a light emitting element having a pair of electrodes on the same surface side and a covering member covering the light emitting element so that a part of the surface of the pair of electrodes is exposed;
forming a metal layer continuously covering the exposed pair of electrodes and the covering member;
a step of irradiating the metal layer with a laser beam to remove a portion of the metal layer to form a pair of external connection electrodes spaced apart from each other and having a larger area than each of the pair of electrodes;
A method of manufacturing a light emitting device comprising:
(Aspect 2)
The method of manufacturing a light-emitting device according to mode 1, wherein the step of irradiating the laser beam includes a step of irradiating the metal layer in a region wider than the width between the pair of electrodes.
(Aspect 3)
The method of manufacturing a light-emitting device according to mode 1 or mode 2, wherein the step of irradiating the laser light includes a step of irradiating a part of the pair of electrodes.
(Aspect 4)
The method of manufacturing a light-emitting device according to any one of modes 1 to 3, wherein the step of forming the metal layer includes a step of forming by any one of ALD, CVD, sputtering, and vapor deposition.
(Aspect 5)
The intermediate comprises a plurality of the light emitting elements and the covering member integrally covering the plurality of the light emitting elements,
The method of manufacturing a light-emitting device according to any one of modes 1 to 4, wherein the metal layer continuously covers the pair of exposed electrodes of the plurality of light-emitting elements and the covering member. .
(Aspect 6)
A method of manufacturing a light-emitting device according to aspect 5, comprising a step of cutting the covering member between the light-emitting elements and the metal layer covering the covering member between the light-emitting elements into individual pieces.
(Aspect 7)
The method of manufacturing a light-emitting device according to aspect 5, wherein the step of irradiating the laser beam includes a step of irradiating the metal layer covering the covering member between the light-emitting elements and including a position to be cut. .
(Aspect 8)
The light emitting elements are plural, and the step of forming the metal layer includes, after cutting the covering member between the light emitting elements, forming the metal layer that is continuous to the cut surface of the covering member. A method for manufacturing a light-emitting device according to aspect 5.
(Aspect 9)
The method for manufacturing a light-emitting device according to any one of Modes 1 to 8, wherein the metal layer contains Ru.
(Mode 10)
The method of manufacturing a light-emitting device according to any one of modes 1 to 9, wherein the metal layer has a laminated structure in which Ni/Ru/Au is laminated on the laminated structure of the light-emitting element.
(Aspect 11)
The method of manufacturing a light-emitting device according to Mode 9 or Mode 10, wherein the Ru has a thickness of 10 Å to 1000 Å.
(Aspect 12)
The method of manufacturing a light-emitting device according to any one of Modes 1 to 11, wherein the pair of electrodes contain Cu.

1, 2, 3, 4, 5, 6, 7, 8, 9, 1a... Light emitting device 11, 31, 61, 71, 81... Intermediate 10... Light emitting element 10a... Laminated structure 10b... Electrode 20, 210, 220... Coating member 30... First translucent member 40... Second translucent member 50, 50a, 50b, 50c, 50d... External connection electrode 501... Concave part of external connection electrode 150, 250... Metal layer S1, S2... Support member L1, L2, L3, L4... Laser beam irradiation area

Claims (9)

a light-emitting element comprising a pair of electrodes provided on the same side, an electrode-forming surface on which the electrodes are formed, and a light-emitting surface on the opposite side of the electrode-forming surface;
a first translucent member covering the light emitting surface of the light emitting element;
a covering member that covers the light emitting element so that a part of the surface of the pair of electrodes is exposed;
A pair of metal layers continuously covering each of the pair of exposed electrodes and the covering member,
outside between the electrodes of the light emitting element, the pair of metal layers have outer edges facing each other, the outer edges facing each other having portions parallel to each other;
A light-emitting device according to claim 1, wherein the width of the covering member exposed between the pair of metal layers between the electrodes of the light-emitting element is narrower than the width of the covering member exposed between the portions parallel to each other . The light emitting device according to claim 1, wherein the metal layer has a thickness of 10 Å to 1000 Å. 3. The light-emitting device according to claim 1, wherein said metal layer has a laminated structure. The light-emitting device according to any one of claims 1 to 3, wherein the covering member has grooves on its surface. 5. The light-emitting device according to claim 1, wherein one of the pair of electrodes has two recessed portions on a side facing the other electrode. The light-emitting device according to any one of claims 1 to 5, wherein one of the pair of metal layers comprises a portion having the same shape as one electrode or the other electrode. The pair of metal layers includes a pair of metal layers consisting of one metal layer covering one electrode and the other metal layer covering the other electrode,
7. The light-emitting device according to claim 1, wherein said one metal layer has a recessed portion on a side facing said other metal layer in plan view. In plan view, each of the pair of metal layers has a side facing each other and a side opposite to each other,
The light-emitting device according to any one of claims 1 to 7, wherein at least one of one and the other of said pair of metal layers comprises a recessed portion on said opposite side. 9. The light-emitting device according to claim 1, wherein said metal layer is positioned up to an outer edge of said light-emitting device in plan view.

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