JP7137079B2 - Light emitting device and manufacturing method thereof - Google Patents

Description

TECHNICAL FIELD The present disclosure relates to a light emitting device and manufacturing method thereof.

2. Description of the Related Art Light-emitting devices using light-emitting elements such as light-emitting diodes or laser diodes are used in many fields including general lighting such as room lighting, vehicle-mounted light sources, backlights for liquid crystal displays, and the like. Performance required for these light-emitting devices is increasing day by day, and further improvement in reliability is required.

The light-emitting device includes a light-emitting element placed on the upper surface of the lead, a frame provided on the upper surface of the lead so as to surround the light-emitting element, and a reflective member covering the side surface of the frame and the side surface of the light-emitting element. A light-emitting device is known (see Patent Document 1, for example).

JP 2016-072412 A

However, in light-emitting devices, as the applications of the light-emitting devices have expanded, there has been a demand for further improvement in the light extraction property and further improvement in the adhesion of the reflective member to the frame and the leads.
Accordingly, an object of the embodiments of the present disclosure is to provide a light-emitting device excellent in light extraction properties and adhesion, and a method for manufacturing the same.

In order to solve the above problems, a light-emitting device according to an embodiment of the present disclosure includes a base in which a first lead and a second lead are supported by a resin member, a light-emitting element mounted on the upper surface of the base, a resin frame provided on the upper surface of the base so as to surround the light emitting element; a part of the side surface of the light emitting element, a part of the inner side of the resin frame, and the base provided inside the resin frame; and a first resin containing a reflective material, the first resin being provided on the top surface of the reflective material layer containing the reflective material and containing the reflective material. and a resin layer that does not cover the upper surface of the base, and the reflector is arranged so as to cover the upper surface of the base. and a sloped region whose height increases as it approaches the inner surface of the resin frame.

In order to solve the above problems, a light-emitting device according to an embodiment of the present disclosure includes a substrate having a base material and a wiring layer formed on the upper surface of the base material; an element, a resin frame provided on the upper surface of the base so as to surround the light emitting element, and a portion of the side surface of the light emitting element and the portion of the inner side surface of the resin frame provided inside the resin frame. and a first resin containing a reflector covering an upper surface of the base, wherein the first resin comprises a reflector layer containing the reflector, and the reflector provided on the upper surface of the reflector layer. a resin layer containing no material, wherein the reflector is arranged so as to cover the upper surface of the base, and the upper surface of the resin layer is a flat region and the base when viewed in cross section; and an inclined region whose height from the upper surface of the resin frame increases as it approaches the inner surface of the resin frame.

A method for manufacturing a light-emitting device according to an embodiment of the present disclosure includes a first step of placing a light-emitting element on the upper surface of a base, and a second step of forming a resin frame on the upper surface of the base so as to surround the light-emitting element. and a first resin containing a reflective material is injected into the inside of the resin frame so that the first resin forms part of the side surface of the light emitting element, part of the inner side surface of the resin frame, and the top surface of the base. and a centrifugal force is applied to the base body by revolving to separate the first resin into a reflector layer containing the reflector and a resin layer not containing the reflector. and a fourth step.

According to the light-emitting device and the manufacturing method thereof according to the embodiment of the present disclosure, it is possible to obtain a light-emitting device having excellent light extraction properties and excellent adhesion between members of the light-emitting device.

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows typically the structure of the light-emitting device which concerns on 1st Embodiment. FIG. 1B is a cross-sectional view taken along line IB-IB of FIG. 1A; FIG. 1C is a partially enlarged cross-sectional view of FIG. 1B; FIG. 2 is a plan view of the light emitting device according to the first embodiment, omitting the resin frame and the first resin. FIG. 2 is a plan view of the light emitting device according to the first embodiment, with the first resin omitted. 4 is a flow chart showing the flow of the method for manufacturing the light emitting device according to the first embodiment; FIG. 3 is a cross-sectional view taken along line VA-VA of FIG. 2, and is a cross-sectional view schematically showing a substrate on which a light emitting element is placed in the first step of the method for manufacturing the light emitting device according to the first embodiment; FIG. 4 is a cross-sectional view taken along line VB-VB of FIG. 3, and is a cross-sectional view schematically showing the base on which the resin frame is formed in the second step of the method for manufacturing the light emitting device according to the first embodiment; FIG. 10 is a cross-sectional view schematically showing a base into which a first resin is injected in a third step of the method for manufacturing the light emitting device according to the first embodiment; FIG. 10 is a cross-sectional view schematically showing a method of separating the first resin into a resin layer and a reflector layer in the fourth step of the method for manufacturing the light emitting device according to the first embodiment; FIG. 4 is a cross-sectional view schematically showing the configuration of a light emitting device according to a second embodiment; 8 is a flow chart showing the flow of a method for manufacturing a light emitting device according to the second embodiment; FIG. 11 is a perspective view schematically showing the configuration of a light emitting device according to a third embodiment; FIG. 11 is a plan view schematically showing the configuration of a light emitting device according to a third embodiment; FIG. 8B is a cross-sectional view schematically showing a cross section taken along line VIIIC-VIIIC of FIG. 8B;

Embodiments are described below with reference to the drawings. However, the embodiments shown below are examples of light-emitting devices for embodying the technical idea of the present embodiment, and are not limited to the following. In addition, unless there is a specific description, the dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiments are not intended to limit the scope of the present invention, but are merely illustrative examples. It's nothing more than Note that the sizes, positional relationships, etc. of members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same names and symbols indicate the same functions or members of the same quality, and detailed description thereof will be omitted as appropriate.

[First embodiment]
<Light emitting device>
First, the light emitting device according to the first embodiment will be described.
1A is a plan view schematically showing the configuration of a light emitting device according to a first embodiment; FIG. FIG. 1B is a cross-sectional view taken along line IB--IB of FIG. 1A. FIG. 1C is a partially enlarged sectional view of FIG. 1B. FIG. 2 is a plan view of the light emitting device according to the first embodiment, with the resin frame and the first resin omitted. FIG. 3 is a plan view of the light emitting device according to the first embodiment, omitting the first resin.

As shown in FIGS. 1A to 1C, the light emitting device 10 includes a base 20 in which a first lead 20A and a second lead 20B are supported by a resin member 20C, and a light emitting element 40 placed on the upper surface of the base 20. a resin frame 50 provided on the upper surface of the base 20 so as to surround the light emitting element 40; a first resin 30 containing a reflective material covering the upper surface of the base 20; and a resin layer 31 that does not contain , the reflector layer 32 has a reflector arranged so as to cover the upper surface of the base 20 , and the upper surface of the resin layer 31 has a flat region 31A and a flat region 31A and the base 20 in a cross-sectional view. and an inclined region 31B whose height h1 from the upper surface of the resin frame 50 increases as it approaches the inner surface of the resin frame 50 . Each configuration will be described below.

(substrate)
As shown in FIG. 2, the base 20 has a first lead 20A, a second lead 20B, and a resin member 20C supporting the first lead 20A and the second lead 20B in a spaced apart state. .
The first lead 20A includes, for example, a mounting portion 21A formed in a substantially polygonal shape in the center of the base 20 and on which the light emitting element 40 is mounted, a terminal portion 23A arranged on one end side of the base 20, and a mounting portion 21A. and a connection portion 22A for connecting the terminal portion 23A. The width W22 of the connecting portion 22A is narrower than the width W21 of the mounting portion 21A and the width W23 of the terminal portion 23A. The width W23 of the terminal portion 23A is wider than the width W21 of the mounting portion 21A and is equal to the base 20. As shown in FIG. The connecting portion 22A has a region to which the wire 60 of the light emitting element 40 is connected. Here, in the first lead 20A and the second lead 20B, the width means the maximum length in the direction perpendicular to the straight line connecting the center of the mounting portion 21A and the center of the connecting portion 22A.
Further, the mounting portion 21A is formed in a substantially octagonal shape. The mounting portion 21A includes a first side 21A1 having the same length as the width W22 of the connecting portion 22A, a second side 21A2 parallel to and facing the first side 21A1, the first side 21A1 and the second side 21A2. a fourth side 21A4 perpendicular to the first side 21A1 and the second side 21A2 and facing the third side 21A3; and an inclined fifth side 21A3 connecting the first side 21A1 and the third side 21A3. a sloped sixth side 21A6 connecting the first side 21A1 and the fourth side 21A4; a sloped seventh side 21A7 connecting the second side 21A2 and the third side 21A3; and an inclined eighth side 21A8 connecting the four sides 21A4. Further, the mounting portion 21A has protrusions formed to protrude from the third side 21A3 and the fourth side 21A4.

The second leads 20B are arranged in such a shape that the intervals between the second side 21A2 of the mounting portion 21A and the sixth side 21A6 and the seventh side 21A7 are substantially constant. The second lead 20B has a width W23 that is substantially the same as the width W23 of the terminal portion 23A. 20B1, 20B2, etc. are formed. One connection end portion 20B1 has a region on which the protective element 80 is placed. The other connection end portion 20B2 has a region to which the wire 60 of the light emitting element 40 is connected.

In plan view, it is preferable that the area of the first lead 20A is larger than the area of the second lead 20B. Since the light emitting element 40 is mounted on the upper surface of the mounting portion 21A of the first lead 20A, the large area of the mounting portion 21A of the first lead 20A allows the heat generated by the light emitting element 40 to be transferred to the first lead. It becomes easier to conduct to 20A. As a result, the temperature rise of the light emitting element 40 can be suppressed, so the reliability of the light emitting device 10 can be improved.

The ends of the first lead 20A and/or the second lead 20B are preferably provided with recesses or protrusions. By providing concave portions or convex portions at locations where the first lead 20A and/or the second lead 20B and the resin member 20C contact, the first lead 20A and/or the second lead 20B and the resin member 20C, contact area can be increased. Thereby, the adhesion between the first lead 20A and/or the second lead 20B and the resin member 20C can be improved.

The first lead 20A and the second lead 20B are used to apply a voltage from an external power supply to electronic components such as the light emitting element 40. As shown in FIG. The first lead 20A and the second lead 20B are preferably made of a material with relatively high thermal conductivity. For example, by using a material having a thermal conductivity of about 200 W/(m·K) or more, the heat generated by the light emitting element 40 can be easily conducted to the first lead 20A.

The first lead 20A and the second lead 20B are preferably made of a material with high strength that can be easily punched or cut. For example, the base material can be a single layer or laminate of metals such as copper, aluminum, gold, silver, tungsten, iron and nickel, alloys thereof, phosphor bronze, iron-containing copper and the like. The metal layer of this laminate may be provided on the entire surface of the first lead 20A and the second lead 20B, or may be provided partially. Alternatively, it may be provided only on one lead.

The first lead 20A and the second lead 20B may have a reflective film on their surfaces. One or more metals such as aluminum, copper, and gold can be used for the reflective film. In particular, it is preferable to use silver for the reflective film. By doing so, the light extraction efficiency of the light emitting device 10 can be improved.

Various methods such as a plating method, a vapor deposition method, a sputtering method, and an ion beam assist vapor deposition method can be used to form the reflective films on the first lead 20A and the second lead 20B. The film thickness may be any film thickness that can effectively reflect the light from the light emitting element 40, and is, for example, about 20 nm to 10 μm, preferably about 50 nm to 5 μm, more preferably about 100 nm to 3 μm. The thickness and shape of the first lead 20A and the second lead 20B can be appropriately set within a range known in the art.

The resin member 20C is provided around the first lead 20A, between the second lead 20B and the first lead 20A, and around one end and the other end of the second lead 20B. and the second lead 20B. The resin member 20C is, for example, a region (resin injection part) to inject molding resin around the first lead 20A, between the second lead 20B and the first lead 20A, and around one end and the other end of the second lead 20B. Formed by filling. By injecting the molding resin from the resin injection portion in this way, it is possible to easily fill the molding resin even in a region away from the resin injection portion, for example, between the second lead 20B and the first lead 20A. can. In addition, since the mounting portion 21A of the first lead 20A has a substantially polygonal shape and is provided with inclined fifth side 21A5, sixth side 21A6, seventh side 21A7 and eighth side 21A8 at the corners, It becomes easier to guide the molding resin around the first lead 20A, between the second lead 20B and the first lead 20A, and around one end and the other end of the second lead 20B.

Materials for the resin member 20C include epoxy resin, silicone resin, BT resin, polyamide resin, polyimide resin, nylon resin, unsaturated polyester, and the like. These resin materials may contain coloring agents, fillers, reinforcing fibers and the like known in the art. When a white filler such as titanium oxide or zinc oxide is used as the coloring agent, the light extraction efficiency of the light emitting device can be improved. In addition, heat from the light emitting element 40 can be efficiently released by including a black filler such as carbon black having a large thermal radiation coefficient in these resin materials. Examples of fillers include silicon oxide and aluminum oxide. Examples of reinforcing fibers include glass, calcium silicate, potassium titanate, and the like.

(Light emitting element 40)
The light emitting element 40 is mounted on the upper surface of the mounting portion 21A of the first lead 20A. The light-emitting element 40 is a semiconductor element that emits light by itself when voltage is applied, and has a light-emitting surface on its upper surface. The light emitting element 40 preferably includes an element substrate 41 made of sapphire or the like arranged on the base 20 side, and a semiconductor layer 42 made of a nitride semiconductor or the like provided on the element substrate 41 . The emission wavelength of the light emitting element 40 can be selected from the ultraviolet region to the infrared region, including the visible region (380 to 780 nm), depending on the composition of the nitride semiconductor. For example, in the light emitting element 40 with a peak wavelength of 430 to 490 nm, In _X Al _Y Ga _1-XY N (0≦X, 0≦Y, X+Y≦1) or the like can be used as the nitride semiconductor. Also, the light emitting element 40 may be arranged on the upper surface of the first lead 20A via a submount.

The shape of the light emitting element 40 may be an arbitrary shape such as a triangle, a square, a polygon such as a hexagon, or a shape similar to these when viewed from above. In addition, the light emitting element 40 has a single-sided electrode configuration in which the n-electrode 43 and the p-electrode 44 are formed on the same surface side, or the n-electrode 43 and the p-electrode 44 are formed on two different surfaces (for example, the upper surface and the lower surface). It may be a double-sided electrode configuration. The n-electrode 43 and p-electrode 44 of the light emitting element 40 are connected to the first lead 20A and the second lead 20B via wires 60, respectively. The n-electrode 43 and the p-electrode 44 of the light emitting element 40 may be directly connected to the second lead 20B and the first lead 20A, respectively. The wire 60 can be made of a highly conductive metal material such as gold, aluminum, copper, or silver.

When the light emitting element 40 is a single-sided electrode, it is mounted face up on the upper surface of the first lead 20A. Face-up mounting is a form in which the surface of the light-emitting element 40 opposite to the surface on which the electrodes are formed faces the base 20 . A bonding member between the light emitting element 40 and the first lead 20A may be an insulating bonding member or a conductive bonding member, and a known bonding member can be used. For example, insulating bonding members include epoxy resins, silicone resins, modified resins thereof, and the like, and conductive bonding members include conductive pastes such as silver, gold, and palladium, and Au—Sn eutectic. Brazing materials such as solder and low-melting-point metals can be used.
When the light emitting element 40 is a double-sided electrode, any known bonding member may be used as the bonding member between the light emitting element 40 and the first lead 20A as long as it is a conductive bonding member. Examples of conductive joining members include conductive paste such as silver, gold and palladium, solder such as Au—Sn eutectic, brazing material such as low melting point metal, and the like.

(resin frame)
As shown in FIG. 3, the resin frame 50 is an annular frame provided on the top surface of the base 20 so as to surround the light emitting element 40 . The shape of the inner edge and outer edge of the resin frame 50 may be various shapes such as a circular shape, an elliptical shape, a polygonal shape such as a square, a hexagon, and an octagon, and a shape in which the corners of the polygonal shape are chamfered when viewed from above. . Since the resin frame 50 is provided so as to surround the light emitting element 40 , the uncured raw material to be the first resin 30 provided inside the resin frame 50 can be stopped inside the resin frame 50 . The resin frame 50 is formed by arranging an uncured raw material, which is the base of the resin frame 50, in a region where the resin frame 50 is desired to be formed, and curing the raw material.

The resin frame 50 covers the connecting portion between the first lead 20A and the resin member 20C, that is, only the mounting portion 21A of the first lead 20A is exposed inside the resin frame 50, and the resin member 20C is not exposed. It is preferably provided as follows. Since the resin member 20C is not exposed inside the resin frame 50, the light transmitted through the first resin 30 is not absorbed by the black filler or the like contained in the resin member 20C. As a result, the light transmitted through the first resin 30 is reflected on the upper surface of the mounting portion 21A, and the light extraction efficiency of the light emitting device 10 is improved.
The size of the cross-sectional diameter D (see FIG. 3) of the resin frame 50 is such that the mounting portion 21A for the first lead 20A is exposed inside the resin frame 50, and the first lead 20A is outside the resin frame 50. And, it is appropriately set so that a part of the second lead 20B and a part of the resin member 20C are exposed.

The cross-sectional shape of the resin frame 50 (see FIG. 1C) may be a circular shape including a partial circle, an elliptical shape including a partial ellipse, a rectangular shape, etc., as long as the uncured first resin 30 can be stopped inside the resin frame 50. can have various shapes. The cross-sectional shape of the resin frame 50 is such that the inner surface of the resin frame 50 is convex on the side facing the light emitting element 40, and includes a curved partial circle having the vertex of this convexity, that is, the innermost point P of the resin frame 50. A circular shape is preferred. Since the cross-sectional shape of the resin frame 50 is circular including the apex P of the partial circle, the reflector layer 32 of the first resin 30 containing the reflector is formed under the resin frame 50 .
Then, the reflector layer 32 enters into the lower side of the vertex P of the resin frame 50 . As a result, the light from the light emitting element 40, which penetrates into the lower portion of the resin frame 50, is reflected upward in the light extraction direction by the reflector layer 32, so that the light extraction performance of the light emitting device 10 is improved.

Materials for the resin frame 50 include phenol resin, epoxy resin, BT resin, PPA, and silicone resin. In particular, as the material of the resin frame 50, a silicone resin having excellent light resistance is preferable. In the resin frame 50 , it is preferable that the base material resin of the resin frame 50 is the same material as the base material resin of the first resin 30 . This improves the adhesion between the resin frame 50 and the first resin 30 .

The resin frame 50 efficiently absorbs light from the light emitting element 40 by dispersing powder such as a reflective material having a higher refractive index than that of the base material resin. Can reflect light. As the reflecting member, for example, titanium oxide, aluminum oxide, zirconium oxide, and magnesium oxide can be used. In particular, titanium oxide is preferable because it is relatively stable against moisture and has a high refractive index. The resin frame 50 is a member having a reflectance of 60% or more, preferably 70% or more, with respect to the light from the light emitting element 40 . By doing so, the light reaching the resin frame 50 is less likely to be absorbed by the resin frame 50, and the light extraction property of the light emitting device 10 is improved.

(First resin)
The first resin 30 is provided inside the resin frame 50 , that is, in the region surrounded by the resin frame 50 , and covers part of the side surface of the light emitting element 40 , part of the inner surface of the resin frame 50 , and the upper surface of the base 20 . It is a covering resin layer containing a reflective material. Since the first resin 30 covers part of the side surface of the light emitting element 40 and does not cover the entire side surface, the light emitted sideways from the light emitting element 40 is not blocked, and the light extraction property of the light emitting device 10 is improved. improves. Since the first resin 30 partially covers the side surface of the resin frame 50, the adhesion between the first resin 30 and the resin frame 50 is improved.

The first resin 30 is a resin composed only of a reflector layer 32 containing a reflector and a base material resin that is provided on the upper surface of the reflector layer 32 and does not contain a reflector, that is, is a base material of the first resin 30. and a layer 31 . The reflector layer 32 is formed by sedimentation of the reflector in the resin layer 31 and does not have an interface with the resin layer 31 . Therefore, the first resin 30 does not consist of two members, the resin layer 31 and the reflector layer 32 . For convenience, the part of the reflective layer 32 that is separated from the resin layer 31 may be referred to as "the upper surface of the reflective layer 32".

The reflector layer 32 is arranged between the resin frame 50 and the light emitting element 40 so as to cover the upper surface of the base 20 . As a result, the bonding between the first resin 30 and the base 20 is the bonding between the reflector made of metal particles and the first lead 20A of the base 20 made of a metal material. Adhesion is improved. Further, when the surface of the first lead 20A that constitutes the base 20 is Ag-plated, the Ag-plated layer is covered with the reflector layer 32, thereby suppressing the sulfurization of Ag.

The top surface of the resin layer 31 has, in a cross-sectional view, a flat area 31A and an inclined area 31B in which the height h1 on the side of the resin frame 50 from the top surface of the base 20 increases as it approaches the inner surface of the resin frame 50. have. Preferably, the entire side surface of the resin layer 31 on the side of the resin frame 50 and the inner side surface of the resin frame 50 are in contact with each other. The resin layer 31 also preferably has an inclined region 31B in which the height h2 on the side of the light emitting element 40 from the top surface of the base 20 increases as the side surface of the light emitting element 40 is approached.

In the first resin 30, the upper surface of the resin layer 31 has an inclined region 31B on the resin frame 50 side, and the entire side surface of the resin layer 31 on the resin frame 50 side is in contact with the inner side surface of the resin frame 50. The contact area with the resin layer 31 is increased, and the adhesion between the resin frame 50 and the first resin 30 is improved. In the first resin 30, the upper surface of the resin layer 31 has the inclined region 31B on the light emitting element 40 side. Improves adhesion with Also, the inclined region 31B on the resin frame 50 side and the light emitting element 40 side preferably has a curved shape. If the inclined region 31B has a curved shape, there is no portion where stress is concentrated, and the adhesion is further improved.
It is preferable that the height h1 of the resin layer 31 from the base 20 is higher than the height h2 of the resin layer 31 from the base 20 . As a result, the contact area between the resin frame 50 and the resin layer 31 is further increased, so that the adhesion between the resin frame 50 and the first resin 30 is further improved.
The degree of inclination of the inclined region 31B of the resin layer 31 on the resin frame 50 side is preferably 30 to 60 degrees. The same applies to the degree of inclination of the inclined region 31B on the light emitting element 40 side. Since the contact area between the first resin 30 and the resin frame 50 or the light emitting element 40 increases when the sloped region 31B is inclined as described above, the adhesion is improved.

The top surface of the reflector layer 32 is preferably flat when viewed in cross section. In other words, it is preferable that the top surface of the reflector layer 32 has a constant thickness along the top surface of the substrate 20 . The reflector layer 32 contains a reflector having poor adhesion to the resin frame 50 . On the other hand, the resin layer 31 has excellent adhesion to the resin frame 50 because the base is made of resin. Therefore, if the top surface of the reflector layer 32 is flat, the reflector layer 32 enters between the partial circle and the top surface of the substrate 20 below the vertex P of the resin frame 50 . As a result, the edge of the reflector layer 32 enters the lower portion of the resin frame 50, making it difficult for the reflector layer 32 to peel off. In addition, if the top surface of the reflector layer 32 is flat in a cross-sectional view, the top surface of the reflector layer 32, like the top surface of the resin layer 31, becomes higher as it approaches the inner side surface of the resin frame 50. The area of the material layer 32 in contact with the resin frame 50 can be reduced. Therefore, the area of the resin layer 31 in contact with the resin frame 50 can be increased, so that the adhesion between the first resin 30 and the resin frame 50 is improved.

When the light emitting element 40 includes the element substrate 41 arranged on the base 20 side and the semiconductor layer 42 provided on the element substrate 41, the upper surface of the first resin 30 covering the side surface of the light emitting element 40, that is, the light emitting element 40 It is preferable that the upper surface of the side inclined region 31B has a height h2 lower than the lower surface of the semiconductor layer 42 from the substrate 20 . As a result, the light emitted sideways from the light emitting element 40 is not blocked, so that the light extraction property of the light emitting device 10 is further improved.

When the inner surface of the resin frame 50 has a curved shape that protrudes toward the side facing the light emitting element 40 , the upper surface of the inclined region 31B of the first resin 30 covering the inner surface of the resin frame 50 may Preferably, the height h1 is lower than the vertex P of the curved shape. As a result, it is possible to prevent the first resin 30 from floating from the base 20, so that the adhesion between the first resin 30 and the base 20 is further improved.

The first resin 30 is a resin layer in which a base material resin contains a reflective material. Examples of the base material resin include phenol resin, epoxy resin, BT resin, PPA, and silicone resin. In particular, as the base material resin, a silicone resin having excellent light resistance is preferable. As for the resin frame 50 and the first resin 30 , it is preferable that the base material resin of the first resin 30 is the same material as the base material resin of the resin frame 50 . This improves the adhesion between the resin frame 50 and the first resin 30 .

The first resin 30 is formed by dispersing powder such as a reflective material that does not easily absorb the light from the light emitting element 40 and has a higher refractive index than the base material resin. of light can be reflected. As the reflector, for example, titanium oxide, aluminum oxide, zirconium oxide, and magnesium oxide can be used. In particular, titanium oxide is preferable because it is relatively stable against moisture and has a high refractive index. The reflective material is a material having a reflectance of 60% or more, preferably 70% or more, with respect to the light from the light emitting element 40 . By doing so, the light reaching the first resin 30 is less likely to be absorbed by the first resin 30, and the light extraction property of the light emitting device 10 is improved.

In the description of the light emitting device 10, the light emitting device 10 including one light emitting element 40 has been described. However, in the light-emitting device 10 of the embodiment, a plurality of light-emitting elements 40 may be used, and the resin frame 50 may be formed so as to collectively surround the plurality of light-emitting elements 40 . Moreover, as shown in FIG. 1A, the light-emitting device 10 of the embodiment may include a protective element 80 .
For example, when a reverse voltage is applied to the light emitting element 40, the protection element 80 blocks current flowing in the reverse direction, and when a forward voltage higher than the operating voltage of the light emitting element 40 is applied, In addition, it prevents overcurrent from flowing through the light emitting element 40 . The protective element 80 includes a protective circuit and an electrostatic protective element, and specifically, a Zener diode can be used.

In the light-emitting device 10, by including the first resin 30 containing a reflective material, the light emitted sideways from the light-emitting element 40 is reflected by the reflective material upward in the light extraction direction. improves. Since the first resin 30 partially covers the side surface of the light emitting element 40, the light emitted from the light emitting element 40 is not blocked, so that the light extraction property is further improved. In addition, the first resin 30 has a reflector layer 32, and the reflector layer 32 covers the upper surface of the base body. Since the reflector layer 32 serves as an intervening layer with respect to the base 20, the adhesion between the first resin 30 and the base 20 is improved. Furthermore, since the first resin 30 has the resin layer 31 and the upper surface of the resin layer 31 has the inclined region 31B, the contact area between the resin layer 31 and the inner surface of the resin frame 50 increases. Adhesion between the resin 30 and the resin frame 50 is improved.

<Method for manufacturing light-emitting device>
Next, a method for manufacturing the light emitting device according to the first embodiment will be described.
FIG. 4 is a flow chart showing the flow of the method for manufacturing the light emitting device according to the first embodiment. 5A is a cross-sectional view taken along line VA-VA of FIG. 2, and is a cross-sectional view schematically showing a substrate on which a light-emitting element is placed in the first step of the method for manufacturing the light-emitting device according to the first embodiment; FIG. . 5B is a cross-sectional view taken along line VB-VB of FIG. 3, and is a cross-sectional view schematically showing the base on which the resin frame is formed in the second step of the method for manufacturing the light emitting device according to the first embodiment. FIG. 5C is a cross-sectional view schematically showing the base into which the first resin is injected in the third step of the method for manufacturing the light emitting device according to the first embodiment; 5D is a cross-sectional view schematically showing a method of separating the first resin into a resin layer and a reflector layer in the fourth step of the method for manufacturing the light emitting device according to the first embodiment; FIG.

As shown in FIGS. 4 and 5A to 5D, the method for manufacturing the light emitting device 10 includes placing the light emitting element 40 on the upper surface of the substrate 20 in which the first lead 20A and the second lead 20B are supported by the resin member 20C. a second step S2 of forming a resin frame 50 on the upper surface of the base 20 so as to surround the light emitting element 40; A third step S3 of injecting a first resin 30 containing a reflective material into the inside of the resin frame 50 so as to cover a part of the inner surface and the upper surface of the base 20, and applying centrifugal force to the base 20 by revolving. and a fourth step S4 of separating the first resin 30 into a reflector layer 32 containing a reflector and a resin layer 31 not containing a reflector.

(First step)
As shown in FIG. 5A, the first step S1 is a step of placing the light emitting element 40 on the upper surface of the substrate 20 in which the first lead 20A and the second lead 20B are supported by the resin member 20C. Preferably, the light emitting element 40 is mounted on the mounting portion 21A of the first lead 20A.
In the first step S1, the light emitting element 40 is mounted on the base 20 by a known method, and the lower surface of the light emitting element 40 on the element substrate 41 side and the upper surface of the base 20 are bonded using a known bonding member. Next, the n-electrode 43 of the light emitting element 40 is electrically connected to the first lead 20A through the wire 60. As shown in FIG. Also, although not shown, the p-electrode 44 of the light-emitting element 40 is electrically connected to the second lead 20B via the wire 60 . A protective element 80 (not shown) may be electrically connected to the first lead 20A through the wire 60. FIG. As a wire bonding method, a known method such as ball bonding or wedge bonding may be used.

(Second step)
As shown in FIG. 5B, the second step S2 is a step of forming a resin frame 50 on the upper surface of the base 20 so as to surround the light emitting element 40. As shown in FIG. In the second step S2, an uncured base resin, which is to form the base of the resin frame 50, is placed in a region where the resin frame 50 is to be formed on the upper surface of the base body 20 by a known method, and the base resin is cured. Then, the resin frame 50 is formed. The viscosity of the base material resin is adjusted in advance so that the resin frame 50 has a frame shape after curing.

(Third step)
As shown in FIG. 5C, in the third step S3, the resin frame 50 is covered with the first resin 30 such that the first resin 30 covers part of the side surface of the light emitting element 40, part of the inner surface of the resin frame 50, and the upper surface of the base 20. is a step of injecting a first resin 30 containing a reflective material into the inner side of the .
In the third step S3, the base material resin, which is the base material of the first resin 30, is injected into the inside of the resin frame 50 in an uncured state by potting, spraying, or the like. The injection amount of the base material resin is adjusted so that it does not reach the semiconductor layer of the light emitting element 40 . After that, the base material resin is cured after performing the following fourth step. Further, in the third step S3, when the uncured base resin is injected into the resin frame 50, the nozzle 90 is arranged directly above the resin frame 50 so that the uncured base resin is injected into the resin frame 50. It is preferable to inject so as to flow along the inner surface to the upper surface of the substrate 20 and the side surface of the light emitting element 40 . The uncured base material resin may be injected from the center of the upper surface of the substrate 20 .

When the base resin is injected from the resin frame 50 side in this way, the difference in wettability between the upper surface of the base 20 and the inner side surface of the resin frame 50 and the side surface of the light emitting element 40 causes the upper surface of the base resin to be wetted. In addition, sloped regions 31B extending upward from the inner surface of the resin frame 50 and the side surfaces of the light emitting element 40 are formed on both sides of the flat region 31A formed directly above the base 20, that is, on the side of the resin frame 50 and the side of the light emitting element 40. be done. The inner side surface of the resin frame 50 and the side surface of the light emitting element 40 have higher wettability than the upper surface of the base 20, that is, the first lead 20A, which is a metal surface, due to the difference in glossiness. Also, the inner surface of the resin frame 50 can be soaked in an organic solvent before injecting the uncured base material resin. By soaking the inner surface of the resin frame 50 with an organic solvent in advance, it is possible to promote the rising of the inclined region 31B. The shape and the like of the inclined region 31B are adjusted according to the viscosity and the like of the base material resin to be injected.

(Fourth step)
As shown in FIG. 5D, in the fourth step S4, a centrifugal force is applied to the base 20 due to its revolution, and the first resin 30 is divided into a reflecting material layer 32 containing a reflecting material, a resin layer 31 containing no reflecting material, It is a step of separating into
In the fourth step S4, the substrate 20 is revolved so that the rotation axis S is on the upper surface side of the substrate 20. As shown in FIG. A centrifugal force is applied with the rotation axis S so that the upper surface of the substrate 20 faces inside. A rotation axis S on the upper surface side of the base 20 is parallel to the upper surface of the base 20 , extends across the resin frame 50 , and is positioned above the base 20 . Due to the revolution of the base 20 , the reflector contained in the first resin 30 is forcibly settled on the upper surface side of the base 20 . That is, the reflective material is arranged in layers so as to cover the upper surface of the substrate 20 . Further, the shape of the upper surface of the reflector layer 32 can be adjusted according to the magnitude of the centrifugal force determined by the rotational speed, etc., and the upper surface of the reflector layer 32 is preferably flat. In the fourth step S4, after the rotation in the revolution direction, the substrate 20 may be rotated in the rotation direction so that the rotation axis is perpendicular to the center of the length direction of the substrate 20. Due to this rotation in the direction of rotation, the heights h1 and h2 (see FIG. 1C) of the inclined region 31B of the resin layer 31 from the substrate 20 can be made higher.
Moreover, the rising of the inclined region 31B also occurs when the first resin 30 is cured after the fourth step S4.

In the method for manufacturing the light emitting device 10, the resin frame is formed by performing the third step S3 of injecting the first resin 30 and the fourth step S4 of separating the first resin 30 into the reflector layer 32 and the resin layer 31. Since the first resin 30 having the resin layer 31 covering the inclined region 31B covering a part of the inner surface of the substrate 20 and the reflector layer 32 having the reflector arranged so as to cover the upper surface of the base 20 can be formed, the light A light-emitting device 10 excellent in removability and adhesion can be manufactured. Each step will be described below.
[Second embodiment]
<Light emitting device>
First, a light emitting device according to the second embodiment will be described. FIG. 6 is a cross-sectional view schematically showing the configuration of the light emitting device according to the second embodiment. Note that the same reference numerals are given to the same configurations as those of the light emitting device according to the first embodiment, and the description thereof is omitted.

The light emitting device 10</b>A further includes a second resin 70 covering the upper surface of the light emitting element 40 and the upper surface of the first resin 30 in addition to the same configuration as the light emitting device 10 . Also, in the light emitting device 10A, the second resin 70 preferably contains a phosphor.

(Second resin 70)
The second resin 70 is a resin layer that covers the upper surface of the semiconductor layer 42 of the light emitting element 40 and the upper surface of the resin layer 31 of the first resin 30, and the height of the resin frame does not exceed the height of the resin frame 50 in a cross-sectional view. It is provided so as to be in contact with the inner surface of 50 .
As a material of the second resin 70, a translucent resin material, a glass material, or the like can be used. In particular, it is preferable to use a resin material for the material of the second resin 70 . Since the first resin 30 and the resin frame 50 each contain a resin material, the second resin 70 is also a resin material. Adhesion between 70 and resin frame 50 can be improved. The resin material of the second resin 70 includes polycarbonate resin, epoxy resin, phenol resin, silicone resin, acrylic resin, polymethylpentene resin, polynorbornene resin, modified resins thereof, and hybrid resins containing one or more of these resins. etc. can be used. In particular, the material of the second resin 70 is preferably a dimethyl-based silicone resin or a phenyl-based silicone resin, which are excellent in light resistance. The second resin 70 preferably contains a phosphor, and may contain a light diffusing agent. In addition, when the second resin 70 contains a phosphor, the top surface of the second resin 70 is shaped so that the center is downward so that the distance between the phosphor and the light emitting element 40 is short, in consideration of the luminous efficiency. A curved shape is preferred.

(Phosphor)
As the phosphor, phosphor particles that can convert the wavelength of the light emitted from the light emitting element 40 or reflected by the first resin 30 by being excited by the light from the light emitting element 40 are used. For example, phosphors that can be excited by a blue light emitting device or an ultraviolet light emitting device include a cerium-activated yttrium aluminum garnet phosphor (YAG:Ce), a cerium activated lutetium aluminum garnet phosphor. (LAG:Ce), nitrogen-containing calcium aluminosilicate phosphor activated with europium and/or chromium (CaO—Al ₂ O ₃ —SiO ₂ :Eu, Cr), silicate phosphor activated with europium (( Nitride-based phosphors such as Sr, Ba) ₂ SiO ₄ :Eu), β-sialon phosphors, CASN-based phosphors, and SCASN-based phosphors; Fluoride-based phosphors such as KSF-based phosphors, and sulfide-based phosphors , chloride-based phosphors, silicate-based phosphors, phosphate-based phosphors, quantum dot phosphors, and the like. By combining these phosphors with blue light emitting elements or ultraviolet light emitting elements, light emitting devices 10 with various wavelengths can be manufactured.

(light diffusing agent)
Titanium oxide, zirconium oxide, aluminum oxide, silicon oxide, or the like can be used as the material of the light diffusing agent. In particular, titanium oxide is preferable because it is relatively stable against moisture and has a high refractive index.

In the light-emitting device 10A, by including the second resin 70, it is possible to prevent dust and the like from entering the light-emitting device 10A from the outside, thereby improving the reliability. Further, in the light emitting device 10A, since the second resin 70 contains a phosphor, the wavelength of the light emitted from the light emitting element 40 or reflected by the first resin 30 can be converted, so that the color tone of the extracted light can be adjusted. In particular, when the first resin 30 has the inclined region 31B, the distance between the phosphor of the second resin 70 and the light emitting element 40 becomes short, so the luminous efficiency is improved. Furthermore, when the cross-sectional shape of the resin frame 50 is a curved shape and the resin layer 31 is formed directly below the vertex P of the resin frame 50 , the phosphor of the second resin 70 does not enter the lower part of the resin frame 50 . Therefore, the luminous efficiency of extracted light is improved.

<Method for manufacturing light-emitting device>
Next, a method for manufacturing the light emitting device according to the second embodiment will be described. FIG. 7 is a flow chart showing the flow of the method for manufacturing the light emitting device according to the second embodiment. The same steps as in the method of manufacturing the light emitting device according to the first embodiment are denoted by the same reference numerals as in the first embodiment, and the description thereof is omitted.

The method for manufacturing the light emitting device 10A further includes a fifth step S5 of injecting the second resin in addition to the same steps S1 to S4 as the method for manufacturing the light emitting device 10. FIG. In the method for manufacturing the light emitting device 10A, including the fifth step S5 improves the reliability of the light emitting device 10A and the color tone adjustability of the extracted light.

(Fifth step)
The fifth step S<b>5 is a step of injecting the second resin 70 inside the resin frame 50 so that the second resin 70 covers the upper surface of the light emitting element 40 and the upper surface of the resin layer 31 of the first resin 30 . Preferably, the second resin 70 is injected so that the inner surface of the resin frame 50 and the second resin 70 are in contact with each other. The method of injecting the second resin 70 is similar to that of the first resin 30, such as potting or spraying.
As an example, the second resin 70 is formed so that the center is curved downward, but the second resin 70 may be formed so as to have the same height uniformly. Further, the second resin 70 may be formed so that the center thereof is curved upward so that the second resin 70 becomes higher directly above the light emitting element 40 .

[Third embodiment]
<Light emitting device>
Next, a light emitting device according to a third embodiment will be described. FIG. 8A is a perspective view schematically showing the configuration of a light emitting device according to a third embodiment; 8B is a plan view schematically showing the configuration of the light emitting device according to the third embodiment; FIG. FIG. 8C is a cross-sectional view schematically showing a cross section taken along line VIIIC-VIIIC of FIG. 8B.
The light emitting device 10B includes a base 200 having a base material 201 and a wiring layer 202 formed on the upper surface of the base material 201, a light emitting element 40 mounted on the upper surface of the base 200, and a light emitting element 40 so as to surround the light emitting element 40. a resin frame 50 provided on the upper surface of the base 200; and a resin frame 50 provided inside the resin frame 50 to cover part of the side surface of the light emitting element 40, part of the inner surface of the resin frame 50, and the upper surface of the base 200; and a first resin 30 containing a reflective material. The first resin 30 has a reflector layer 32 containing a reflector and a resin layer 31 provided on the upper surface of the reflector layer 32 and containing no reflector. Further, the reflector layer 32 is arranged so as to cover the upper surface of the base 200, and the upper surface of the resin layer 31 has a flat area 31A and a height from the upper surface of the base 200 to the resin frame 50 in cross-sectional view. and a sloped region 31B that becomes higher as it approaches the inner surface of the .
The light emitting device 10B basically has the same configuration as the light emitting device 10, and the configuration of the base 200 is different. Therefore, mainly the different parts will be explained, and the other already explained parts will be omitted as appropriate.

The substrate 200 has a base material 201 made of ceramic or the like and a wiring layer 202 formed on the upper surface of the base material. The light emitting elements 40 are aligned and arranged in the central mounting area of the base 200 . A wiring layer 202 is formed around the light emitting element 40 , and a resin frame 50 is provided so as to cover the circularly formed portion of the wiring layer 202 .
The base material 201 is formed in a plate shape with an insulating member. Here, for the base material 201, it is preferable to use a material with high heat dissipation, and more preferably a material with high light shielding properties and base material strength. Specifically, ceramics such as alumina, aluminum nitride, and mullite, phenolic resin, epoxy resin, polyimide resin, BT resin (bismaleimide triazine resin), resins such as polyphthalamide (PPA), metals (aluminum, copper, etc.), Furthermore, a composite material composed of a resin and a metal or ceramics may be used. Further, when a material having high permeability is used as the base material 201, a known light-shielding material is included so as to provide light-shielding properties.

The wiring layer 202 circularly surrounds the arrangement area in which the plurality of light emitting elements 40 are arranged, and includes an anode-side positive electrode pad wiring electrode 202A1 and a cathode-side negative electrode pad wiring electrode 202B1 for electrical connection with the outside. is formed on the base material 201 so as to have a The positive electrode pad wiring electrode 202A1 and the negative electrode pad wiring electrode 202B1 are formed in a rectangular shape so that the wiring area is larger than other wiring portions so as to facilitate electrical connection from the outside. An extension wiring 202A2 is formed continuously on the positive electrode pad wiring electrode 202A1, and a first connection wiring 202A3 is formed in an arc shape continuously with the extension wiring 202A2. Similarly, an extended wiring 202B2 is formed continuously on the negative electrode pad wiring electrode 202B1, and a second connection wiring 202B3 is formed in an arc shape continuously with the extended wiring 202B2. The first connection wiring 202A3 and the second connection wiring 202B3 are intermittently arranged in an annular shape with a plurality of other arc-shaped third connection wirings 202C1 to 202C4. The third connection wirings 202C1 to 202C4 are formed here by arc-shaped wirings at four locations. The third connection wirings 202C1 to 202C4, together with the first connection wiring 202A3 and the second connection wiring 202B3, may form an intermittent annular wiring as a whole. Depending on the length of the arc, one may be formed or may not be formed at all. The wiring layer 202 (positive pad wiring electrode 202A1, extended wiring 202A2, first connection wiring 202A3, negative pad wiring electrode 202B1, extended wiring 202B2, second connection wiring 202B3, third connection wiring 202C1 to 202C4) is composed of, for example, It can be formed using a metal such as Cu, Ag, Au, Al, Pt, Ti, W, Pd, Fe, Ni, or an alloy containing these. Such wiring can be formed by printing, electrolytic plating, electroless plating, vapor deposition, sputtering, or the like. When the base material 201 is metal, an insulating layer such as glass epoxy may be formed between the base material 201 and the wiring layer 202 .

The resin frame 50 is formed in an annular shape to cover the upper surfaces of the first connection wiring 202A3, the second connection wiring 202B3 and the third connection wirings 202C1 to 202C4. This resin frame 50 is formed of the same configuration and material as those already described.
The first resin 30 is provided inside the resin frame 50 , i.e., in the region surrounded by the resin frame 50 , and covers part of the side surface of the light emitting element 40 , part of the inner surface of the resin frame 50 , and the upper surface of the base 200 . It is a covering resin layer containing a reflective material. The first resin 30 is also made of the structure and material already described.
A plurality of light emitting elements 40 are installed in the resin frame 50 of the base 200, and are connected to any one of the first wiring electrode 202A3, the second wiring electrode 202B3, or the third wiring electrodes 202C1 to 202C4 by wires.
Further, on the upper surface of the substrate 200, an electrode identification mark M10 for distinguishing between the cathode and the anode may be formed, and a plurality of guide marks M11 may be formed as guides for providing the resin frame 50. FIG.
Other configurations, for example, the second resin 70 may be provided so as to cover the light emitting element 40 and the first resin 30 within the resin frame 50, and are equivalent to the configurations already described.
The light-emitting device 10B formed in this manner has the same effects as those of the light-emitting devices 10 and 10A already described.

<Method for manufacturing light-emitting device>
Next, a method for manufacturing the light emitting device 10B will be described. The light emitting device 10B is manufactured by the same manufacturing process as the manufacturing method already explained with reference to FIG.
The method for manufacturing the light emitting device 10B includes a first step S1 of placing the light emitting element 40 on the upper surface of the base 200, and a first connection wiring 202A3 and a second connection wiring on the upper surface of the base 200 so as to surround the light emitting element 40. 202B3 and the upper surfaces of the third connection wirings 202C1 to 202C4 are formed in a second step S2 of forming a resin frame 50 in a ring shape; a third step in which the first resin 30 covers a portion of the side surface of the light emitting element 40, a portion of the inner surface of the resin frame 50, and the upper surface of the base 200; It is formed so as to include a fourth step S4 of separating the first resin 30 into a reflector layer 32 containing a reflector and a resin layer 31 not containing a reflector. In the first step of placing the light emitting element 40, the light emitting element 40, the first connection wiring 202A3, the second connection wiring 202B3 and the third connection wiring 202C1 to 202C4 are electrically connected via wires. will be Since each step performs the same work as each step already explained, the explanation is omitted.

In the above-described embodiment, the mode for carrying out the invention was described more specifically, but the gist of the present invention is not limited to these descriptions, and based on the description of the claims of the present invention should be interpreted broadly. In addition, it goes without saying that various changes and modifications based on these descriptions are also included in the gist of the present invention.

10, 10A, 10B Light emitting device 20, 200 Substrate 20A First lead 21A Mounting portion 21A1 First side 21A2 Second side 21A3 Third side 21A4 Fourth side 21A5 Fifth side 21A6 Sixth side 21A7 Seventh side 21A8 Eighth Side 22A Connection portion 23A Terminal portion 20B Second lead 20C Resin member 30 First resin 31 Resin layer 31A Flat region 31B Inclined region 32 Reflector layer 40 Light emitting element 41 Element substrate 42 Semiconductor layer 43 n electrode 44 p electrode 50 resin frame 60 Wire 70 Second resin 80 Protective element 201 Base material 202 Wiring layer S1 First step S2 Second step S3 Third step S4 Fourth step S5 Fifth step

Claims (14)

a base on which the first lead and the second lead are supported by a resin member;
a light emitting element mounted on the upper surface of the base;
a resin frame provided on the upper surface of the base so as to surround the light emitting element;
a first resin containing a reflective material provided inside the resin frame and covering part of the side surface of the light emitting element, part of the inner surface of the resin frame, and the top surface of the base;
The first resin has a reflector layer containing the reflector, and a resin layer provided on the upper surface of the reflector layer and not containing the reflector,
The reflector layer has a flat upper surface in a cross-sectional view, and the reflector is arranged so as to cover the upper surface of the base,
The upper surface of the resin layer has, in a cross-sectional view, a flat region, a first inclined region whose height from the upper surface of the base increases as it approaches the inner surface of the resin frame, and the light emitting element from the upper surface of the base. and a second inclined region whose side height increases toward the side surface of the light emitting element . a substrate having a base material and a wiring layer formed on the upper surface of the base material;
a light emitting element mounted on the upper surface of the base;
a resin frame provided on the upper surface of the base so as to surround the light emitting element;
a first resin containing a reflective material provided inside the resin frame and covering part of the side surface of the light emitting element, part of the inner surface of the resin frame, and the top surface of the base;
The first resin has a reflector layer containing the reflector, and a resin layer provided on the upper surface of the reflector layer and not containing the reflector,
The reflector layer has a flat upper surface in a cross-sectional view, and the reflector is arranged so as to cover the upper surface of the base,
The upper surface of the resin layer has, in a cross-sectional view, a flat region, a first inclined region whose height from the upper surface of the base increases as it approaches the inner surface of the resin frame, and the light emitting element from the upper surface of the base. and a second inclined region whose side height increases toward the side surface of the light emitting element . 3. The light emitting device according to claim 1, wherein the entire side surface of the resin layer on the resin frame side is in contact with the resin frame. The light-emitting element includes an element substrate arranged on the side of the base, and a semiconductor layer provided on the element substrate,
4. The upper surface of the first resin covering the side surface of the light emitting element according to claim 1, wherein the height from the base is lower than the height of the lower surface of the semiconductor layer in a cross-sectional view. Luminescent device. 5. The light emitting device according to claim 1, further comprising a second resin that covers the top surface of the light emitting element and the top surface of the first resin. The light emitting device according to claim 5, wherein the second resin contains a phosphor. The light emitting element is mounted on the upper surface of the first lead,
2. The light emitting device according to claim 1, wherein said resin frame is provided so as to cover a connecting portion between said first lead and said resin member. 8. The light-emitting device according to claim 1, wherein said reflector is titanium oxide. The light-emitting device according to any one of claims 1 to 8, wherein the resin frame and the first resin contain base material resin of the same material. The light emitting device according to any one of claims 1 to 9, wherein the inner surface of the resin frame has a curved shape that protrudes toward the side facing the light emitting element in a cross-sectional view. 11. The light-emitting device according to claim 10, wherein the top surface of the first resin covering the inner surface of the resin frame has a lower height from the top surface of the base than the position of the vertex of the curved shape in a cross-sectional view. 12. The light emitting device according to any one of claims 1 to 11, wherein the top surface of the reflector layer has a constant thickness along the top surface of the base. a first step of placing a light emitting element on the upper surface of the base;
a second step of forming a resin frame on the upper surface of the base so as to surround the light emitting element;
A first resin containing a reflective material is injected into the resin frame, and the first resin covers part of the side surface of the light emitting element, part of the inner surface of the resin frame, and the top surface of the base. a third step of
A centrifugal force is applied to the base so that the upper surface of the base faces inward, in a direction parallel to the upper surface of the base, transverse to the resin frame, and centered on a rotation axis positioned above the base. a fourth step of separating the first resin into a reflecting material layer containing the reflecting material and a resin layer not containing the reflecting material ,
In the fourth step, the upper surface of the resin layer includes, in a cross-sectional view, a flat region, a first inclined region whose height from the upper surface of the base increases as it approaches the inner surface of the resin frame, and a slope of the base. A method of manufacturing a light-emitting device , comprising: a second inclined region in which a height on the side of the light-emitting element from the upper surface increases as the side surface of the light-emitting element is approached . 14. The method of manufacturing a light emitting device according to claim 13, further comprising a fifth step of injecting a second resin into the top surface of the light emitting element and the top surface of the resin layer after the fourth step.

Images