JP7119290B2 - Thermosetting resin composition, resin film with carrier, prepreg, printed wiring board and semiconductor device - Google Patents

Description

TECHNICAL FIELD The present invention relates to a thermosetting resin composition, a resin film with a carrier, a prepreg, a printed wiring board and a semiconductor device.

In recent years, with the demand for higher functionality of electronic devices, electronic components have become more densely integrated and mounted, and semiconductor devices used in these electronic devices have been rapidly becoming smaller. ing. Printed wiring boards used in semiconductor devices are required to be thin and have high density and fine circuits.

Various developments have been made on resin compositions for forming insulating layers used in conventional printed wiring boards. Techniques of this type include, for example, the resin composition described in Patent Document 1. According to the document, an epoxy resin, an active ester resin, a first silica having an average particle size of 0.1 μm or more and 10 μm or less, and a second silica having an average particle size of 1 nm or more and less than 100 nm, A resin composition is described in which the content of the second silica is 0.6 parts by weight or more and 30 parts by weight or less with respect to 100 parts by weight of the silica of 1.

JP 2011-174035 A

However, as a result of examination by the present inventor, it was found that the resin composition described in the above document has room for improvement in terms of compatibility between insulation reliability and semi-additive process (SAP) characteristics. did.

Normally, when the SAP method is used to form fine wiring, desmear treatment is performed using a chemical solution. Such a desmear treatment is performed, for example, by subjecting the surface of the insulating layer to swelling treatment with an alkaline swelling liquid, roughening the resin surface with an aqueous solution of permanganate, and then neutralizing the surface. . At this time, the adhesion between the insulating layer surface and the plated conductor layer is expressed mainly by the anchoring effect due to the fine roughness formed on the insulating layer surface. As for the anchoring effect of the roughened insulating layer surface, the higher the roughness, the higher the adhesion with the plated conductor layer. it gets harder. Conversely, if the roughness is reduced, there is a high possibility that the adhesiveness to the electroless plated conductor layer cannot be exhibited sufficiently. Therefore, it is necessary to achieve both low roughness and good adhesion to the plated conductor layer.

The insulating layer is also required to have a low coefficient of linear thermal expansion so as not to cause a difference in coefficient of linear thermal expansion between the insulating layer and the conductor layer formed of the wiring pattern formed on the surface of the insulating layer. If the coefficient of linear thermal expansion of the insulating layer is high, the difference in coefficient of linear thermal expansion between the insulating layer and the conductor layer becomes large, and problems such as cracks occurring between the insulating layer and the conductor layer tend to occur.

The inventors of the present invention have studied the SAP characteristics of the insulating layer in the printed wiring board when desmear treatment with a chemical solution is used. It was found that there is a strong correlation between

Focusing on such a correlation, the inventors of the present invention conducted intensive studies on curing agents and compounded resins used in thermosetting resin compositions. "Active ester compound having a structural site with an ester group and a monovalent naphthaleneoxy group at both ends in the molecular skeleton" enhances desmear resistance, reduces the surface roughness of the insulating layer, and coats the plated conductor layer. It has been found that the adhesion with can be enhanced.

In addition, the inventors have found that the surface of the insulating layer can have a fine roughness shape and the dielectric loss tangent can be reduced, so that the transmission loss of signals in the high frequency region can be reduced.

Further, the present inventors have found that the reliability of interlayer connection can be improved with excellent removability of smear generated in a blind via hole for interlayer connection by laser, and have completed the present invention.

（式（１）において、ｌはそれぞれ独立で０以上、６以下の整数であり、ｍはそれぞれ独立で１以上、５以下の整数であり、ｎは１以上、６以下の整数である。）
＜組成１＞
ｊＥＲ８２８（ビスフェノールＡ型エポキシ樹脂、液状エポキシ樹脂） ７質量部、
ｊＥＲ８０７（ビスフェノールＦ型エポキシ樹脂、液状エポキシ樹脂） ７質量部、
ＨＰ－４０３２（ナフタレン型エポキシ樹脂、ＤＩＣ社製、半固形エポキシ樹脂） ２０質量部、
ＨＰ－７２００Ｌ（ジシクロペンタジエン型エポキシ樹脂、ＤＩＣ社製、固形エポキシ樹脂） ５０質量部、
ＬＡ－３０１８（ノボラック樹脂、ＤＩＣ社製） ５質量部、
ＥＸＢ－８１００Ｌ（活性エステル樹脂、ＤＩＣ社製） ５０質量部、
４－ジメチルアミノピリジン ０．２質量部、
コバルト（ＩＩ）アセチルアセトナート ０．０５質量部、
ＦＸ－２９３（フェノキシ樹脂、新日鉄住金化学社製） １５質量部、
ＳＯ－Ｃ２（シリカ、アドマテックス社製） ４００質量部、
１０－（２，５－ジヒドロキシフェニル）－９，１０－ジヒドロ９－オキサ－１０フォスファフェナントレン－１０－オキサイド １０質量部、
シクロヘキサノン ７０質量部、
トルエン ２０質量部、および、
メチルエチルケトン １０質量部、を含む熱硬化性樹脂組成物。
According to the invention,
A thermosetting resin composition used for forming an insulating layer constituting a buildup layer of a multilayer printed wiring board,
an epoxy resin (A) having a softening point of 50° C. or higher;
an epoxy resin (B) that is liquid at room temperature;
an active ester compound (C) having a structural site represented by the following formula (1);
an inorganic filler (D);
characterized by comprising
The content of the epoxy resin (B), which is liquid at room temperature, is 10% by mass (non-volatile matter), based on the total amount of the epoxy resin (A) having a softening point of 50 ° C. or higher and the epoxy resin (B), which is liquid at room temperature. % or more and 35% or less by mass,
The active ester compound ( A thermosetting resin composition in which the content of C) is in the range of 40 % by mass or more and 70% by mass or less. However, the thermosetting resin composition having the composition shown below as <Composition 1> is excluded.

(In formula (1), l is each independently an integer of 0 or more and 6 or less, m is each independently an integer of 1 or more and 5 or less, and n is an integer of 1 or more and 6 or less.)
<Composition 1>
jER828 (bisphenol A type epoxy resin , liquid epoxy resin) 7 parts by mass,
jER807 (bisphenol F type epoxy resin , liquid epoxy resin) 7 parts by mass,
HP-4032 (naphthalene type epoxy resin, manufactured by DIC, semi-solid epoxy resin) 20 parts by mass,
HP-7200L (dicyclopentadiene type epoxy resin, manufactured by DIC, solid epoxy resin) 50 parts by mass,
LA-3018 (novolac resin, manufactured by DIC) 5 parts by mass,
EXB-8100L (active ester resin, manufactured by DIC) 50 parts by mass,
4-dimethylaminopyridine 0.2 parts by mass,
Cobalt (II) acetylacetonate 0.05 parts by mass,
FX-293 (phenoxy resin, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 15 parts by mass,
SO-C2 (silica, manufactured by Admatechs) 400 parts by mass,
10-(2,5-dihydroxyphenyl)-9,10-dihydro-9-oxa-10 phosphaphenanthrene-10-oxide 10 parts by mass,
Cyclohexanone 70 parts by mass,
20 parts by mass of toluene, and
A thermosetting resin composition containing 10 parts by mass of methyl ethyl ketone.

（式（１）において、ｌはそれぞれ独立で０以上、６以下の整数であり、ｍはそれぞれ独立で１以上、５以下の整数であり、ｎは１以上、６以下の整数である。）
さらに、本発明によれば、
シアネートエステル樹脂、マレイミド化合物、ベンゾシクロブテン樹脂、ビニル樹脂、アクリレート化合物から選択される少なくとも一種をさらに含む、熱硬化性樹脂組成物が提供される。

(In formula (1), l is each independently an integer of 0 or more and 6 or less, m is each independently an integer of 1 or more and 5 or less, and n is an integer of 1 or more and 6 or less.)
Furthermore, according to the present invention,
A thermosetting resin composition is provided which further contains at least one selected from cyanate ester resins, maleimide compounds, benzocyclobutene resins, vinyl resins, and acrylate compounds.

Furthermore, according to the present invention,
A thermoset composition is provided which further comprises a thermoplastic resin.

Furthermore, according to the present invention,
A thermosetting resin composition is provided in which the thermoplastic resin is at least one selected from phenoxy resins, polyimide resins, polyamide resins, polyamideimide resins, and polyphenylene ether resins.

Furthermore, according to the present invention,
A thermosetting resin is provided in which the inorganic filler (D) is at least one selected from talc, alumina, glass, silica, mica, boehmite, aluminum hydroxide, and magnesium hydroxide.

Furthermore, according to the present invention,
A thermosetting resin composition is provided in which the content of the inorganic filler (D) is 50% by mass or more and 85% by mass or less with respect to 100% by mass of the total solid content of the thermosetting resin composition. .

Furthermore, according to the present invention,
A thermosetting resin composition is provided in which the inorganic filler (D) is surface-treated with at least one silane coupling agent selected from the group consisting of amino, epoxy and thiol.

Furthermore, according to the present invention,
A resin film with a carrier is provided, comprising a carrier substrate and a resin film formed of the thermosetting resin composition and provided on the carrier substrate.

Furthermore, according to the present invention,
A prepreg is provided in which a fiber base material is impregnated with the thermosetting resin composition.

Furthermore, according to the present invention,
Provided is a printed wiring board comprising an insulating layer composed of a cured product of the thermosetting resin composition.

Furthermore, according to the present invention,
A semiconductor device is provided comprising the printed wiring board and a semiconductor element mounted on a circuit layer of the printed wiring board or embedded in the printed wiring board.

According to the present invention, a thermosetting resin that is excellent in reducing the surface roughness of an insulating layer and in adhesion to a plated conductor layer and is used for forming a buildup layer of a multilayer printed wiring board. A resin film with a carrier, a prepreg, a printed wiring board, and a semiconductor device are provided.

1 is a cross-sectional view showing an example of the configuration of a resin film with a carrier in this embodiment; FIG. It is process sectional drawing which shows an example of the manufacturing process of the semiconductor device in this embodiment.

An embodiment of the present invention will be described below with reference to the drawings. In addition, in all the drawings, the same constituent elements are denoted by the same reference numerals, and the explanation thereof is omitted as appropriate. Also, the drawings are schematic diagrams and do not correspond to actual dimensional ratios.

A thermosetting resin composition, a resin film with a carrier, a prepreg, a printed wiring board, and a semiconductor device are described below.

First, the thermosetting resin composition (hereinafter sometimes referred to as "resin composition") in the present embodiment will be described.

The resin composition according to this embodiment is used to form an insulating layer that constitutes a buildup layer of a multilayer printed wiring board. In addition, examples of insulating layers constituting printed wiring boards include insulating layers in prepregs, core substrates, solder resists, and the like.

The resin composition can be, for example, in the form of a varnish containing a solvent. On the other hand, the resin composition may be film-like. In this case, for example, a film-like resin composition can be obtained by subjecting a resin film obtained by applying a varnish-like resin composition to a solvent removal treatment. The film-shaped resin composition can be laminated on a carrier base material to form a resin film with a carrier, or can be impregnated into a fiber base material to form a prepreg.
[Epoxy resin (A) having a softening point of 50°C or higher]
The epoxy resin (A) having a softening point of 50° C. or higher is a compound having an epoxy group, and any conventionally known one can be used. Examples include polyfunctional epoxy compounds having two or more epoxy groups in the molecule. In addition, a hydrogenated epoxy compound may be used.

Examples of the epoxy resin (A) having a softening point of 50° C. or higher include HP-4700/HP-4710 (tetrafunctional naphthalene type epoxy resin) manufactured by DIC Corporation and HP-6000 (naphthylene ether type epoxy resin) manufactured by DIC Corporation. , Nippon Kayaku Co., Ltd. NC-7000L / NC7300L, Nippon Steel Chemical Co., Ltd. ESN-475V / ESN-375 / ESN-170 / ESN-480 (naphthol type epoxy resin) naphthalene type epoxy resin, Mitsubishi Chemical Co., Ltd. Trihydroxyphenylmethane type epoxy resins such as jER1032H60 / EPPN-502H manufactured by Nippon Kayaku Co., Ltd., dicyclopentadiene aralkyl type epoxy resins such as Epiclon HP-7200L (polyfunctional solid epoxy resin containing a dicyclopentadiene skeleton) manufactured by DIC Corporation, Japan Biphenyl aralkyl type epoxy resins such as NC-3000 / NC-3000L / NC3500 (polyfunctional solid epoxy resin containing biphenyl skeleton) manufactured by Kayaku Co., Ltd., Epiclon N660 manufactured by DIC, Epiclon N690, EOCN-104S manufactured by Nippon Kayaku Co., etc. Novolac type epoxy resin, biphenyl type epoxy resin such as YX-4000HK manufactured by Mitsubishi Chemical Corporation, phosphorus-containing epoxy resin such as TX0712 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., tris(2,3-epoxypropyl)isocyanate such as TEPIC manufactured by Nissan Chemical Industries, Ltd. Nurate, solid bis-A epoxy resin such as YL6810 manufactured by Mitsubishi Chemical Co., Ltd., and the like can be mentioned. By using the epoxy resin (A) having a softening point of 50° C. or higher, an insulating layer having a high glass transition temperature (Tg) and excellent crack resistance can be obtained. Aromatic epoxy resins are preferred from the viewpoint of heat resistance. Among them, naphthalene-type epoxy compounds and biphenyl-type epoxy compounds are more preferable.

As the epoxy resin (A) having a softening point of 50° C. or higher, one of these may be used alone, two or more of them may be used in combination, and a prepolymer thereof may be used in combination. .

[Epoxy resin (B) liquid at room temperature]
The resin composition of the present invention contains an epoxy resin (B) that is liquid at room temperature. The liquid epoxy resin (B) is an epoxy resin that is liquid at room temperature (for example, 20° C.) and has 1 to 2 or more epoxy groups. Resins, phenol novolak type epoxy resins, naphthalene type epoxy resins, cyclohexanedimethanol type epoxy resins, glycidylamine type epoxy resins, dicyclopentadiene type epoxy resins, hydrogenated type epoxy resins, alicyclic epoxy resins, polyol type epoxy resins, Examples include monofunctional reactive dilution type epoxy resins and the like. Commercially available products include jER828EL / jER807 / jER152 / jER630 / jER604 / YX8034 manufactured by Mitsubishi Chemical Corporation, HP4032 / HP4032D manufactured by DIC, EP-4088L / EP-4000 / ED-523L manufactured by ADEKA, and Sanko as a monofunctional OPP-G manufactured by Co., Ltd., and the like. Liquid epoxy resins may be used in combination of two or more. By using epoxy resin (B), which is liquid at room temperature, it has excellent fluidity even when it is highly filled with inorganic fillers. An insulating layer with excellent adhesion can be obtained. From the viewpoint of heat resistance, bifunctional or higher functional epoxy resins are preferred.

In the resin composition of the present invention, the content of the epoxy resin (B), which is liquid at room temperature, is preferably 0.5% by mass or more and 25% by mass or less with respect to 100% by mass of the nonvolatile matter in the resin composition. , more preferably 1% by mass or more and 20% by mass or less, and still more preferably 1.5% by mass or more and 12% by mass or less. If the content is too small, the flexibility and fluidity of the resin sheet may be reduced, and if the content is too large, the glass transition temperature may be lowered and the peelability of the carrier from the carrier-coated resin film may be reduced. In addition, the adhesion of the plated conductor layer with low roughness may decrease. In addition, the content of the epoxy resin (B) that is liquid at room temperature is 2% per 100% by mass (non-volatile matter) of the total amount of the epoxy resin (B) that is liquid at room temperature and the epoxy resin (A) that has a softening point of 50°C or higher. The range of 5 mass % or more and 55 mass % or less is preferable, the range of 5 mass % or more and 45 mass % or less is more preferable, and the range of 10 mass % or more and 35 mass % or less is still more preferable.

[Active ester compound (C)]
The resin composition of the present invention comprises, as a curing agent, an active ester compound ( C). As a result, when the surface of the insulating layer is roughened, both the reduction of surface roughness and adhesion to the plated conductor layer are achieved. Excellent smear removability.

（式（１）において、ｌはそれぞれ独立で０以上、６以下の整数であり、ｍはそれぞれ独立で１以上、５以下の整数であり、ｎは１以上、６以下の整数である。）
上記式（１）において、ｌは０以上、６以下の整数であり、１以上、５以下の整数であることが好ましく、１以上、４以下の整数であるのがより好ましい。ｍは１以上、５以下の整数であり、１以上、４以下の整数であることが好ましく、１以上、３以下の整数であるのがより好ましい。ｎは１以上、６以下の整数であり、１以上、５以下の整数であることが好ましく、１以上、３以下の整数であるのがより好ましい。

(In formula (1), l is each independently an integer of 0 or more and 6 or less, m is each independently an integer of 1 or more and 5 or less, and n is an integer of 1 or more and 6 or less.)
In the above formula (1), l is an integer of 0 to 6, preferably an integer of 1 to 5, and more preferably an integer of 1 to 4. m is an integer of 1 or more and 5 or less, preferably an integer of 1 or more and 4 or less, and more preferably an integer of 1 or more and 3 or less. n is an integer of 1 or more and 6 or less, preferably an integer of 1 or more and 5 or less, and more preferably an integer of 1 or more and 3 or less.

Active ester compound (C) can be obtained by a conventionally known method. The active ester compound (C) can be obtained, for example, by reacting a dihydroxynaphthalene compound with benzyl alcohol to obtain a benzyl-modified naphthalene compound, It is an active ester compound obtained through a step of reacting with a compound. The active ester compound (C) is described, for example, in International Publication No. 2016/098488.

Commercial products of the active ester compound (C) include “EXB-8100L-65T, EXB-8150L-65T” manufactured by DIC.

The content of the active ester compound (C) is the content of the epoxy resin (A) having a softening point of 50° C. or higher, the content of the epoxy resin (B) that is liquid at room temperature, and the content of the active ester compound (C). With respect to a total of 100% by mass, it is preferably in the range of 20% by mass or more and 80% by mass or less, more preferably 30% by mass or more and 70% by mass or less, and 40% by mass or more and 60% by mass or less. preferable. When the content of the active ester compound (C) is 20% by mass or more, the dielectric properties of the cured product of the resin composition can be enhanced. Particularly preferably, the ratio of the ester equivalent of the active ester compound to the total epoxy equivalent of the epoxy resin is in the range of 0.45:0.55 to 0.65:0.35.

The resin composition according to the present invention may contain a curing agent other than the active ester compound (C) in addition to the active ester compound (C). Only one of the other curing agents may be used, or two or more thereof may be used in combination.

Examples of other curing agents include phenol compounds, amine compounds, acid anhydrides, dicyandiamide, and the like. The resin composition according to the present embodiment contains an inorganic filler (D) as an essential component. Thereby, the storage elastic modulus E' of the cured prepreg and the resin substrate to be obtained can be improved. Furthermore, the coefficient of linear expansion of the resulting insulating layer can be reduced.

[Inorganic filler (D)]
The resin composition of the present invention contains an inorganic filler (D). This reduces the difference in coefficient of thermal expansion between the insulating layer and the conductor layer comprising the wiring pattern, thereby suppressing the occurrence of cracks. Moreover, since warping of the semiconductor device can be reduced when the multilayer printed wiring board is thinned, the connection reliability of the solder connection portion can be improved. Examples of the inorganic filler (D) include silicates such as talc, calcined clay, uncalcined clay, mica, and glass; oxides such as titanium oxide, alumina, boehmite, silica, and fused silica; calcium carbonate, and magnesium carbonate. , carbonates such as hydrotalcite; hydroxides such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide; sulfates or sulfites such as barium sulfate, calcium sulfate, calcium sulfite; zinc borate, barium metaborate, Borate salts such as aluminum borate, calcium borate and sodium borate; nitrides such as aluminum nitride, boron nitride, silicon nitride and carbon nitride; titanates such as strontium titanate and barium titanate. can.

Among these, talc, alumina, glass, silica, mica, boehmite, aluminum hydroxide, and magnesium hydroxide are preferred, and one of these may be used alone, or two or more thereof may be used in combination.

In the resin composition of the present invention, the inorganic filler (D) is preferably surface-treated with a coupling agent or the like. This makes it possible to obtain a resin composition for a multilayer printed wiring board that exhibits excellent desmear properties in the step of roughening the surface of the insulating layer in the multilayer printed wiring board production step.

The method of surface treatment is not particularly limited, but the surface may be treated in advance by a wet method or a dry method, or may be treated with a coupling agent contained in the resin composition. In particular, it is preferable that the inorganic filler (D) is previously surface-treated, and the aggregation of the inorganic filler (D) can be suppressed, and since the dispersibility is excellent, the fluidity is excellent even when the filler is highly filled, and fine roughness can be formed.

The above coupling agents used for surface treatment include, for example, epoxysilane, styrylsilane, methacryloxysilane, acryloxysilane, mercaptosilane, N-butylaminopropyltrimethoxysilane, N-ethylaminoisobutyltrimethoxysilane, N -methylaminopropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-(N-allylamino)propyltrimethoxysilane, (cyclohexylaminomethyl)triethoxysilane, N-cyclohexylaminopropyltrimethoxysilane, N-ethylaminoisobutylmethoxyldiethoxysilane, (phenylaminomethyl)methyldimethoxysilane, N-phenylaminomethyltriethoxysilane, N-methylaminopropylmethyldimethoxysilane, vinylsilane, isocyanatosilane, sulfidesilane, chloropropylsilane, ureido Silane compounds and the like can be mentioned. Among these, aminosilanes, epoxysilanes, and thiol-based alkoxysilanes are preferred, and secondary aminosilane compounds are particularly preferred. Examples of secondary aminosilane compounds include N-butylaminopropyltrimethoxysilane, N-ethylaminoisobutyltrimethoxysilane, N-methylaminopropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-( N-allylamino)propyltrimethoxysilane, (cyclohexylaminomethyl)triethoxysilane, N-cyclohexylaminopropyltrimethoxysilane, N-ethylaminoisobutylmethoxyldiethoxysilane, (phenylaminomethyl)methyldimethoxysilane, N-phenylamino methyltriethoxysilane, N-methylaminopropylmethyldimethoxysilane, and the like. Thereby, it is possible to obtain a resin composition for a multilayer printed wiring board having excellent desmear property in the step of roughening the surface of the insulating layer in the manufacturing process of the multilayer printed wiring board.

The amount of the surface treatment agent of the coupling agent to the inorganic filler is not particularly limited because it depends on the specific surface area, but the inorganic filler is 0.01% by mass or more and 5% by mass or less with respect to the inorganic filler. is preferably It is more preferably 0.1% by mass or more and 3% by mass or less. When the content of the coupling agent exceeds the above upper limit, cracks may occur in the insulating resin composition for multilayer printed wiring boards. be. When the content of the coupling agent is at least the above lower limit value, the inorganic filler (D) can be sufficiently coated, and the heat resistance of the obtained prepreg cured product and resin substrate can be improved. In addition, when the content of the coupling agent is equal to or less than the above upper limit, it is possible to suppress the reaction from being affected, and it is possible to suppress deterioration in the bending strength of the obtained cured product of the prepreg and the resin substrate.

The average particle size of the inorganic filler (D) is not particularly limited, but is preferably 0.05 µm or more, more preferably 0.15 µm or more. When the average particle size of the inorganic filler (D) is at least the above lower limit, it is possible to prevent the viscosity of the varnish from increasing, and to improve the workability during the preparation of the varnish. The average particle size of the inorganic filler (D) is not particularly limited, but is preferably 4.0 µm or less, more preferably 2.0 µm or less, and particularly preferably 1.5 µm or less. When the average particle size of the inorganic filler (D) is equal to or less than the above upper limit, phenomena such as sedimentation of the inorganic filler (D) in the varnish can be suppressed, and a more uniform resin layer can be obtained. Also, the filling amount can be further improved. Moreover, when the circuit dimension L/S of the printed wiring board is less than 15/15 μm, it is possible to suppress the influence on the insulation between wirings. In addition, it is possible to achieve both low roughness and adhesion to the plated conductor layer, which are necessary for fine wiring formation.

The average particle size of the inorganic filler (D) is determined, for example, by measuring the particle size distribution of the particles on a volume basis using a laser diffraction particle size distribution analyzer (LA-500, manufactured by HORIBA), and determining the median diameter (D ₅₀ ). can be taken as the average particle size.

In addition, the shape and size of the inorganic filler (D) are not particularly limited, but an inorganic filler having a monodisperse average particle size may be used, or an inorganic filler having a polydisperse average particle size may be used. good. Furthermore, inorganic fillers having monodispersed and/or polydispersed average particle sizes may be used singly or in combination of two or more. In addition, from the viewpoint of high filling and high fluidity of the inorganic filler, for example, an inorganic filler having an average particle size of 0.5 μm or more and an average particle size of less than 0.5 μm, particularly preferably an average particle size of 0.2 μm or less Combinations of different inorganic fillers are preferred.

If the shape of the inorganic filler (D) is anisotropic, such as scale-like or needle-like, it is advantageous for increasing the rigidity and decreasing the CTE. Spherical silica is preferable from the viewpoints of low CTE, filling properties, and fluidity.

The content of the inorganic filler (D) contained in the resin composition is not particularly limited. % or more and 85.0 mass % or less is preferable, and 50.0 mass % or more and 75.0 mass % or less is more preferable. When the content of the inorganic filler (D) is within the above range, the strength of the resulting insulating layer and adhesion to the plated conductor layer are excellent.

The resin composition of the present invention may further contain at least one selected from cyanate ester resins, maleimide compounds, benzocyclobutene resins, vinyl resins, and acrylate compounds. Thereby, the glass transition temperature can be increased and heat resistance can be imparted.

The above cyanate ester resin can be obtained, for example, by reacting a cyanogen halide compound with a phenol and, if necessary, prepolymerizing by a method such as heating. Specifically, bisphenol type cyanate ester resins such as novolac type cyanate ester resin, bisphenol A type cyanate ester resin, bisphenol E type cyanate ester resin, tetramethylbisphenol F type cyanate ester resin, and the like can be mentioned. Among these, novolak-type cyanate ester resins are preferred. Thereby, the heat resistance is improved by increasing the crosslink density, and the flame retardancy is also improved. This is because the novolac-type cyanate ester resin forms a triazine ring after the curing reaction. Furthermore, the novolac-type cyanate ester resin has a high proportion of benzene rings in its structure and is likely to be carbonized.

The maleimide compound is preferably a maleimide compound having, for example, at least two maleimide groups in the molecule.

Maleimide compounds having at least two maleimide groups in the molecule include, for example, 4,4′-diphenylmethanebismaleimide, m-phenylenebismaleimide, p-phenylenebismaleimide, 2,2-bis[4-(4-maleimide phenoxy)phenyl]propane, bis-(3-ethyl-5-methyl-4-maleimidophenyl)methane, 4-methyl-1,3-phenylenebismaleimide, N,N'-ethylenedimaleimide, N,N'- hexamethylene dimaleimide, bis(4-maleimidophenyl) ether, bis(4-maleimidophenyl) sulfone, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, bisphenol A diphenyl ether bismaleimide, etc. Examples include compounds having two maleimide groups in the molecule, compounds having three or more maleimide groups in the molecule such as biphenylaralkyl-type maleimide and polyphenylmethane maleimide.

One of these may be used alone, or two or more may be used in combination. Among these maleimide compounds, 2,2-bis[4-(4-maleimidophenoxy)phenyl]propane (manufactured by Daiwa Kasei Kogyo Co., Ltd., BMI-4000), biphenylaralkyl maleimide ( Nippon Kayaku Co., Ltd., MIR-3000) is preferable, and from the viewpoint of heat resistance, 4,4'-diphenylmethanebismaleimide (Daiwa Kasei Kogyo Co., Ltd., BMI-1000), bis-(3-ethyl-5-methyl- 4-Maleimidophenyl)methane (manufactured by Daiwa Kasei Kogyo Co., Ltd., BMI-5100) and polyphenylmethanemaleimide (manufactured by Daiwa Kasei Kogyo Co., Ltd., BMI-2300) are preferred.

Commercially available benzocyclobutene resins include XUS-35077XUS (manufactured by Dow Chemical Co.), and commercially available acrylates include A-9300 (manufactured by Shin-Nakamura Chemical Co., Ltd.).

The content of at least one resin selected from cyanate ester resins, maleimide compounds, benzocyclobutene resins, vinyl resins, and acrylate compounds is not particularly limited, but is 0.5 based on the entire insulating resin composition for a multilayer printed wiring board. More than mass % and less than 50 mass % are preferable, and more than 1 mass % and less than 30 mass % are especially preferable. If the content is less than the above lower limit, the effect of increasing the glass transition temperature may not be obtained sufficiently, and if the content exceeds the above upper limit, the water absorption may deteriorate and the surface smoothness after desmear treatment may deteriorate.

The resin composition of the present invention may contain a thermoplastic resin. Examples of thermoplastic resins include phenoxy resins, acrylic resins, methacrylic resins, polyvinyl acetal resins, polyimide resins, polyamide resins, polyamideimide resins, polyphenylene ether resins, polyethersulfone resins, polyester resins, polyethylene resins, polystyrene resins, polysulfones. resin, polybutadiene resin, ABS resin, and the like. As the thermoplastic resin, one of these may be used alone, or two or more of them having different weight average molecular weights may be used in combination. They may be used together.

Among these, the thermoplastic resin may include one or more selected from the group consisting of phenoxy resins, polyimide resins, polyamideimide resins, polyamide resins, and polyphenylene ether resins. Phenoxy resins and polyimide resins may be used from the viewpoint of increasing elongation of the cured product.

The phenoxy resin is not particularly limited, but examples include a phenoxy resin having a bisphenol A skeleton, a phenoxy resin having a bisphenol F skeleton, a phenoxy resin having a bisphenol S skeleton, bisphenol M (4,4′-(1,3 -Phenylenediisopridiene) phenoxy resin having a bisphenol) skeleton, phenoxy resin having a bisphenol P (4,4'-(1,4)-phenylenediisopridiene) bisphenol) skeleton, bisphenol Z (4,4' Phenoxy resins having a bisphenol skeleton, phenoxy resins having a novolac skeleton, phenoxy resins having an anthracene skeleton, phenoxy resins having a fluorene skeleton, phenoxy resins having a dicyclopentadiene skeleton, norbornene phenoxy resins having a skeleton, phenoxy resins having a naphthalene skeleton, phenoxy resins having a biphenyl skeleton, phenoxy resins having an adamantane skeleton, and the like. As the phenoxy resin, a structure having a plurality of types of skeletons among these can be used, and phenoxy resins having different ratios of the respective skeletons can be used. Furthermore, a plurality of types of phenoxy resins having different skeletons can be used, a plurality of types of phenoxy resins having different weight-average molecular weights can be used, and prepolymers thereof can be used in combination.

As the phenoxy resin, those having an ester group in the molecule are sometimes preferred. The phenoxy resin having an ester group in the molecule is represented by the following general formula (2), and is an esterified phenoxy resin having an epoxy group at the end and a weight average molecular weight Mw of 5000 or more and 200000 or less. In this esterified phenoxy resin, part or all of the polar groups, such as hydroxyl groups, that exhibit water absorption are capped with hydrophobic groups.

（上記式（２）中、Ａは、上記式（３）で表される構造を含み、Ｒ¹及びＲ²は、互いに異なっていてもよく、水素原子又は上記式（４）で表される構造である。ただし、Ｒ¹及びＲ²の少なくともいずれか一方は上記式（４）で表される基である。Ｒ³の５モル％以上は炭素数１～１０の脂肪族カルボニル基又は芳香族カルボニル基で、残りは水素原子であり、ｎは繰り返し数の平均値であり、５以上、５００以下の整数である。上記式（３）中、Ｘ¹は直接結合、炭素数１以上、１３以下の２価の炭化水素基、－Ｏ－、－Ｓ－、－ＳＯ₂－、－Ｃ（ＣＦ₃）₂－及び－ＣＯ－から選ばれる基であり、Ｒ⁴～Ｒ¹¹は、それぞれ独立に、水素原子、炭素数１以上、１２以下のアルキル基、炭素数１以上、１２以下のアルコキシ基、炭素数６以上、１２以下のアリール基、炭素数１以上、１２以下のアルケニル基、炭素数１以上、１２以下のアルキニル基から任意に選ばれる基である。）
上記（３）で表される構造は、下記式（５）または下記式（６）で表される構造である。

(In the above formula (2), A includes a structure represented by the above formula (3), R ¹ and R ² may be different from each other, and are represented by a hydrogen atom or the above formula (4) wherein at least one of R ¹ and R ² is a group represented by the above formula (4), and 5 mol% or more of R ³ is an aliphatic carbonyl group having 1 to 10 carbon atoms or an aromatic group carbonyl group, the rest are hydrogen atoms, n is the average value of the number of repetitions, and is an integer of 5 or more and 500 or less.In the above formula (3), X ¹ is a direct bond, has 1 or more carbon atoms, a group selected from a divalent hydrocarbon group of ¹³ or less, -O-, -S-, -SO ₂ -, -C ⁽ CF ₃ ) ₂ - and -CO-; independently, a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, an aryl group having 6 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, A group arbitrarily selected from alkynyl groups having 1 or more and 12 or less carbon atoms.)
The structure represented by the above (3) is a structure represented by the following formula (5) or the following formula (6).

上記フェノキシ樹脂の重量平均分子量（Ｍｗ）の下限値は、例えば、１０，０００以上であり、好ましくは１５，０００以上であり、さらに好ましくは２０，０００以上である。これにより、他の樹脂との相溶性や溶剤への溶解性を向上させることができる。一方、フェノキシ樹脂の重量平均分子量（Ｍｗ）の上限値は、例えば、６０，０００以下であり、好ましく５５，０００以下であり、より好ましくは５０，０００以下である。これにより、成膜性が向上し、プリント配線基板の製造に用いる場合に不具合が発生するのを抑制することができる。

The lower limit of the weight average molecular weight (Mw) of the phenoxy resin is, for example, 10,000 or more, preferably 15,000 or more, and more preferably 20,000 or more. Thereby, compatibility with other resins and solubility in solvents can be improved. On the other hand, the upper limit of the weight average molecular weight (Mw) of the phenoxy resin is, for example, 60,000 or less, preferably 55,000 or less, and more preferably 50,000 or less. As a result, the film formability is improved, and it is possible to suppress the occurrence of problems when used in the manufacture of printed wiring boards.

Commercially available polyimide resins include PAID series (manufactured by Arakawa Chemical Industries, Ltd.) and Ricacoat SN20 (manufactured by Shin Nippon Rika Co., Ltd.). Commercially available polyamide resins include Kayaflex BPAM-155 (manufactured by Nippon Kayaku Co., Ltd.), and commercially available polyphenylene ether resins include NORYL Resin SA90 (manufactured by SABC).

The content of the thermoplastic resin (e.g., phenoxy resin) is not particularly limited, but is preferably 0.5% by mass or more and 40% by mass or less with respect to the entire thermosetting resin composition excluding the inorganic filler. % or more and 20% or less by mass is more preferable. When the content is at least the above lower limit, it is possible to suppress a decrease in mechanical strength of the insulating layer and a decrease in plating adhesion between the insulating layer and the conductive circuit. When it is equal to or less than the upper limit, an increase in the thermal expansion coefficient of the insulating layer can be suppressed, and a decrease in heat resistance can be suppressed.

In addition, if necessary, a curing accelerator and a coupling agent can be appropriately added to the resin composition.

Although the curing accelerator is not particularly limited, the curing time and curing temperature can be appropriately adjusted. Examples of curing accelerators include organic phosphine compounds such as TPP, TPP-K, TPP-S, and TPTP-S (manufactured by Hokko Chemical Industry Co., Ltd.), Cursol 2MZ, 2E4MZ, 2PZ, 1B2PZ, Cl1Z, Cl1Z-CN, and Cl1Z. - imidazole compounds such as CNS, Cl1Z-A, 2MZ-OK, 2MA-OK, 2PHZ (manufactured by Shikoku Kasei Co., Ltd.), Novacure (manufactured by Asahi Kasei Co., Ltd.), amine adduct compounds such as Fujicure (manufactured by Fuji Kasei Kogyo Co., Ltd.), amine compounds such as 1,8-diazabicyclo[5,4,0]undecene-7,4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol, 4-dimethylaminopyridine; Organometallic complexes or organometallic salts of cobalt, copper, zinc, iron, nickel, manganese, tin, and the like. Two or more curing accelerators may be used in combination.

The content of the curing accelerator is preferably 0.01% by mass or more and 5.0% by mass or less, preferably 0.05% by mass or more, relative to 100% by mass of the nonvolatile matter excluding the inorganic filler (D) , 3.0% by mass or less, and particularly preferably 0.1% by mass or more and 1.5% by mass or less. By setting the content of the curing accelerator within this range, the heat resistance of the cured product obtained from the resin composition can be made more excellent.

Furthermore, the resin composition may contain a coupling agent separately. The coupling agent may be added directly during preparation of the resin composition, or may be added in advance to the inorganic filler (D). The use of a coupling agent can further improve the wettability of the interface between the fiber base material or the inorganic filler (D) and each resin. Therefore, the use of a coupling agent is preferred and can improve the heat resistance of the resulting insulating layer.

Examples of coupling agents include silane coupling agents such as epoxysilane coupling agents, cationic silane coupling agents, and aminosilane coupling agents, titanate coupling agents, and silicone oil coupling agents. One type of coupling agent may be used alone, or two or more types may be used in combination.

As a result, the wettability of the interface between the fiber base material or the inorganic filler (D) and each resin can be increased, and the heat resistance of the resulting prepreg cured product and resin substrate can be further improved.

Various silane coupling agents can be used, and examples thereof include epoxysilane, aminosilane, alkylsilane, ureidosilane, mercaptosilane, and vinylsilane.

Specific compounds include, for example, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-amino Propylmethyldimethoxysilane, N-phenyl γ-aminopropyltriethoxysilane, N-phenyl γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-6-(aminohexyl) 3-aminopropyltrimethoxysilane, N-(3-(trimethoxysilylpropyl)-1,3-benzenedimethanane, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ -glycidoxypropylmethyldimethoxysilane, β-(3,4 epoxycyclohexyl)ethyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, methyltrimethoxysilane, γ-ureidopropyltriethoxysilane, vinyltriethoxysilane, etc. Of these, epoxysilanes, mercaptosilanes and aminosilanes are preferred, and as aminosilanes, primary aminosilanes and anilinosilanes are more preferred.

Furthermore, the resin composition of the present invention may contain curing accelerators, pigments, dyes, antifoaming agents, leveling agents, ultraviolet absorbers, foaming agents, antioxidants, flame retardants, Additives other than the above components, such as ion scavengers and rubber particles, may be added.

Pigments include kaolin, synthetic iron oxide red, cadmium yellow, nickel titanium yellow, strontium yellow, hydrous chromium oxide, chromium oxide, cobalt aluminate, inorganic pigments such as synthetic ultramarine blue, polycyclic pigments such as phthalocyanine, and azo pigments. etc.

Dyes include isoindolinone, isoindoline, quinophthalone, xanthene, diketopyrrolopyrrole, perylene, perinone, anthraquinone, indigoid, oxazine, quinacridone, benzimidazolone, violanthrone, phthalocyanine, azomethine and the like.

The resin composition of the present invention includes acetone, methyl ethyl ketone, methyl isobutyl ketone, toluene, ethyl acetate, cyclohexane, heptane, cyclohexane, cyclohexanone, tetrahydrofuran, dimethylformamide, dimethylacetamide, dimethylsulfoxide, ethylene glycol, cellosolve type, carbitol type, In an organic solvent such as anisole or N-methylpyrrolidone, using various mixers such as ultrasonic dispersion method, high pressure collision dispersion method, high speed rotation dispersion method, bead mill method, high speed shear dispersion method, and rotation/revolution dispersion method. It can be dissolved, mixed and stirred to form a resin varnish.

The solid content of the resin varnish is not particularly limited, but is preferably 40% by mass or more and 80% by mass or less, and particularly preferably 50% by mass or more and 70% by mass or less. As a result, when the resin varnish is used to form a resin film with a carrier, the uniformity of the film is excellent, and the impregnation of the fiber base material can be further improved.

Next, the resin film of this embodiment will be described.

The resin film of the present embodiment can be obtained by forming a film from the varnish-like thermosetting resin composition. For example, the resin film of the present embodiment can be obtained by removing the solvent from a coating film obtained by applying a varnish-like thermosetting resin composition. In such a resin film, the solvent content can be 5% by mass or less with respect to the entire resin film. In the present embodiment, a step of removing the solvent may be carried out under the conditions of, for example, 100° C. or higher and 150° C. or lower and 1 minute or longer and 5 minutes or shorter. This makes it possible to sufficiently remove the solvent while suppressing the progress of curing of the resin film containing the thermosetting resin.

The resin film of the present embodiment may contain a fiber base material inside, and may be a prepreg obtained by impregnating the fiber base material with the resin composition.

In the present embodiment, the method for impregnating the fiber base material with the resin composition is not particularly limited. For example, the resin composition is dissolved in a solvent to prepare a resin varnish, and the fiber base material is immersed in the resin varnish. a method of applying the resin varnish to the fiber base material using various coaters; a method of spraying the resin varnish onto the fiber base material by spraying; mentioned.

Examples of the fiber base material include glass fiber base materials such as glass woven fabric and glass non-woven fabric, inorganic fiber base materials such as woven fabric or non-woven fabric containing an inorganic compound other than glass as a component, aromatic polyamideimide resin, and polyamide. Examples include organic fiber substrates composed of organic fibers such as resins, aromatic polyester resins, polyester resins, polyimide resins, and fluororesins. Among these substrates, the mechanical strength and heat resistance of the printed wiring board can be improved by using a glass fiber substrate represented by a glass woven fabric in terms of strength.

Although the thickness of the fiber base material is not particularly limited, it is preferably 5 μm or more and 150 μm or less, more preferably 10 μm or more and 100 μm or less, and still more preferably 12 μm or more and 90 μm or less. By using a fibrous base material having such a thickness, handleability during prepreg production can be further improved.

When the thickness of the fibrous base material is equal to or less than the above upper limit value, the impregnation property of the resin composition in the fibrous base material is improved, and occurrence of strand voids and deterioration of insulation reliability can be suppressed. In addition, it is possible to facilitate the formation of through-holes using a laser such as carbon dioxide gas, UV, or excimer. Moreover, the strength of a fiber base material and a prepreg can be improved as the thickness of a fiber base material is more than the said lower limit. As a result, handling properties can be improved, prepreg production can be facilitated, and warpage of the resin substrate can be suppressed.

Glass made of one or more kinds of glass selected from E glass, S glass, D glass, T glass, NE glass, UT glass, L glass, HP glass and quartz glass as the glass fiber base material. A fibrous base material is preferably used.
(resin film with carrier)
Next, the carrier-attached resin film of this embodiment will be described.

FIG. 1(a) is a cross-sectional view showing an example of the configuration of the carrier-attached resin film 10 in this embodiment.

As shown in FIG. 1A, the carrier-attached resin film 10 of the present embodiment includes a carrier substrate 40, a primer layer 30 for a plating process provided on the carrier substrate 40, and a plating layer. can be provided with an insulating film 20 serving as an underlying layer. In the carrier-attached resin film 10, at least one of the primer layer 30 and the insulating film 20 is preferably composed of a resin film made of the above resin composition. Thereby, the handleability of the resin film can be improved.

Further, as shown in FIG. 1(b), the carrier-attached resin film 12 of the present embodiment includes a carrier substrate 40 and a resin film made of the resin composition described above and formed on the carrier substrate 40. be able to. The resin film can be used as the insulating film 20 that serves as the base of the plating layer.

The carrier-attached resin films 10 and 12 may be in a roll shape that can be wound up or in a sheet shape such as a rectangular shape. The surfaces of the carrier-attached resin films 10 and 12 may be exposed or covered with a protective film (cover film), for example. As the protective film, a film having a known protective function can be used, and for example, a PET film may be used.

In this embodiment, for example, a polymer film, a metal foil, or the like can be used as the carrier base material 40 . The polymer film is not particularly limited, but includes, for example, polyolefins such as polyethylene and polypropylene; polyesters such as polyethylene terephthalate and polybutylene terephthalate; release paper such as polycarbonate and silicone sheets; A thermoplastic resin sheet having The metal foil is not particularly limited, but for example, copper and/or copper-based alloys, aluminum and/or aluminum-based alloys, iron and/or iron-based alloys, silver and/or silver-based alloys, gold and gold-based alloys , zinc and zinc-based alloys, nickel and nickel-based alloys, tin and tin-based alloys, and the like. Among these, a sheet composed of polyethylene terephthalate is most preferable because it is inexpensive and the peel strength can be easily adjusted. This facilitates peeling from the carrier-attached resin film 10 with appropriate strength.

The lower limit of the thickness of the resin film is not particularly limited, but may be, for example, 1 μm or more, 3 μm or more, or 5 μm or more. Thereby, the mechanical strength of the resin film 10 can be increased. On the other hand, the upper limit of the thickness of the resin film 10 is not particularly limited, but may be, for example, 500 μm or less, 300 μm or less, or 100 μm or less. As a result, the thickness of the semiconductor device can be reduced. The thickness of the resin film may be the thickness of the insulating film 20 or the total thickness of the insulating film 20 and the primer layer 30 .

The lower limit of the film thickness of the primer layer 30 is, for example, 1 μm or more, preferably 2 μm or more. Thereby, insulation reliability can be improved. On the other hand, the upper limit of the film thickness of the primer layer 30 is, for example, 10 μm or less, preferably 8 μm or less. This makes it possible to reduce the thickness of the printed wiring board. Further, by setting the film thickness of the primer layer 30 within the above range, it is possible to obtain a printed wiring board that can be made thinner without losing the properties of the insulating layer in the buildup layer.

The lower limit of the film thickness of the insulating film 20 is, for example, 5 μm or more, preferably 10 μm or more. Thereby, insulation reliability can be improved. On the other hand, the upper limit of the film thickness of the insulating film 20 is, for example, 50 μm or less, preferably 40 μm or less. This makes it possible to reduce the thickness of the printed wiring board. In addition, by setting the thickness of the insulating film 20 within the above range, it is possible to fill and mold the unevenness of the inner layer circuit when manufacturing the printed wiring board, and the insulating resin layer of the suitable buildup layer Thickness can be secured.

The thickness of the carrier base material 40 is not particularly limited, but may be, for example, 10 μm or more and 100 μm or less, or 10 μm or more and 70 μm or less. This is preferable because the handling property when manufacturing the carrier-attached resin film 10 is improved.

The resin film of the carrier-attached resin film 10 of the present embodiment may be a single layer or multiple layers, and may be composed of one or more types of films. When the resin sheet is multi-layered, it may be composed of the same type or different types. Further, the carrier-attached resin film 10 may have a protective film on the outermost layer side of the resin film 10 .

The resin film of this embodiment is a resin film made of the thermosetting resin composition. The cured film of the resin film is composed of a cured product of the thermosetting resin composition. A cured film, which is a cured product of the thermosetting resin composition, can be used as an insulating layer constituting a buildup layer of a printed wiring board.
(Printed wiring board)
The printed wiring board of the present embodiment includes an insulating layer composed of a cured product of the resin film (cured product of the thermosetting resin composition).

In the present embodiment, the cured product of the resin film is, for example, a buildup layer of a normal printed wiring board, a buildup layer of a printed wiring board having no core base material, a buildup layer of a coreless substrate used for PLP, and an MIS. It can be used as a build-up layer of a substrate or the like. The insulating layer that constitutes such a buildup layer is also suitably used as the buildup layer that constitutes the printed wiring board in a large-area printed wiring board that is used to collectively create a plurality of semiconductor packages. be able to.

Further, in the present embodiment, the resin film made of the thermosetting resin composition for forming the insulating film may be impregnated with glass fibers. In a semiconductor package using such a resin film as a build-up layer, the linear expansion coefficient of the cured product of the resin film can be lowered, so package warpage can be sufficiently suppressed.
(semiconductor package)
FIG. 2 is a process cross-sectional view showing an example of the manufacturing process of the semiconductor package 200 of this embodiment.

The semiconductor device (semiconductor package 200) of this embodiment can include a printed wiring board and a semiconductor element 240 mounted on a circuit layer of the printed wiring board or embedded in the printed wiring board.

An outline of the manufacturing process of the semiconductor package 200 of this embodiment will be described below.

First, as shown in FIG. 2(a), a core substrate 100 including an insulating layer 102, via holes 104 and a metal layer 108 is prepared. A via hole 104 is formed in the insulating layer 102 . A metal layer (via) is embedded in the via hole 104 . The metal layer may be covered with an electroless metal plating film 106 . A metal layer 108 (a circuit layer having a predetermined circuit pattern) formed on the surface of the insulating layer 102 is electrically connected to vias formed in the via holes 104 . Although the metal layer 108 is formed on one side of the core substrate 100 in FIG. 2(a), it may be formed on both sides.

Subsequently, a resin film made of the thermosetting resin composition is formed on one surface of the core substrate 100 so as to embed the metal layer 108 . A plurality of layers of the insulating film 20 and the primer layer 30 can be used as the resin film. Alternatively, a single layer of only the insulating film 20 may be used as the resin film.

Subsequently, an opening (not shown) is formed in the resin film. An opening can be formed to expose the metal layer 108 . A method for forming the opening is not particularly limited, and for example, a laser processing method, an exposure development method, a blasting method, or the like can be used.

In this embodiment, the resin film (the insulating film 20 and the primer layer 30) may be thermally cured after forming such an opening. Thereby, the resin film can be composed of the cured product of the thermosetting resin composition of the present embodiment.

Moreover, desmear processing can be performed as needed. In the desmear process, the surface of the resin film can be roughened while removing the smear generated inside the opening.

Although the method of desmearing is not particularly limited, it can be carried out, for example, as follows. First, the core substrate 100 laminated with the resin film is immersed in a swelling liquid containing an organic solvent, and then immersed in an alkaline permanganate aqueous solution for neutralization and roughening treatment. Diethylene glycol monobutyl ether, ethylene glycol, or the like can be used as the organic solvent. Examples of such a swelling liquid include "Swelling Dip Securigant P" manufactured by Atotech Japan. As the permanganate, for example, potassium permanganate, sodium permanganate, or the like can be used. The liquid temperature of the swelling liquid and the permanganate aqueous solution may be, for example, 50° C. or higher and 100° C. or lower. Also, the immersion time in the swelling liquid or the permanganate aqueous solution may be, for example, 1 minute or longer, or 30 minutes or shorter.

In the desmearing process, only the above wet desmearing treatment can be performed, but plasma irradiation may be performed in addition to the desmearing treatment.

Subsequently, an electroless metal plating film 202 is formed on the primer layer 30 . An example of the electroless plating method will be described. For example, catalyst nuclei are provided on the surface of the primer layer 30 of the underlayer. The catalyst nuclei are not particularly limited, but noble metal ions and palladium colloids can be used, for example. Subsequently, an electroless metal plating film 202 is formed by electroless plating using the catalyst nuclei as nuclei. For electroless plating, for example, one containing copper sulfate, formalin, a complexing agent, sodium hydroxide, or the like can be used. After electroless plating, heat treatment at 100° C. or higher and 250° C. or lower can be performed to stabilize the plating film.

Subsequently, as shown in FIG. 2B, a resist 204 having a predetermined opening pattern (openings 206) is formed on the electroless metal plating film 202. Next, as shown in FIG. This opening pattern corresponds to, for example, a circuit pattern. The resist 204 is not particularly limited, and known materials can be used, and liquid and dry films can be used. In the case of fine wiring formation, a photosensitive dry film or the like can be used as the resist 204 . An example using a photosensitive dry film will be described. For example, a photosensitive dry film is laminated on the electroless metal plating film 202, the non-circuit-forming region is exposed to light and cured, and the unexposed portion is dissolved and removed with a developing solution. A resist 204 is formed by leaving the cured photosensitive dry film.

Subsequently, as shown in FIG. 2C, an electrolytic metal plating layer 208 is formed at least inside the opening pattern of the resist 204 and on the electroless metal plating film 202 by electroplating. Electroplating is not particularly limited, but a known method used in a normal printed wiring board can be used. For example, while being immersed in a plating solution such as copper sulfate, current is applied to the plating solution etc. can be used. Electrolytic metal plating layer 208 may be a single layer or may have a multi-layer structure. The material of the electrolytic metal plating layer 208 is not particularly limited, but for example, any one or more of copper, copper alloy, 42 alloy, nickel, iron, chromium, tungsten, gold, and solder can be used.

Subsequently, as shown in FIG. 2D, the resist 204 is removed using an alkaline remover, sulfuric acid, a commercially available resist remover, or the like.

Subsequently, as shown in FIG. 2E, the electroless metal plating film 202 is removed from the region (opening 210) other than the region where the electrolytic metal plating layer 208 is formed. That is, using the electrolytic metal plating layer 208 as a mask, the underlying electroless metal plating film 202 is selectively removed. For example, the electroless metal plating film 202 can be removed by using soft etching (flash etching) or the like. Here, the soft etching treatment can be performed, for example, by etching using an etchant containing sulfuric acid and hydrogen peroxide. Thereby, a metal layer 220 having a predetermined pattern can be formed. Thus, the metal layer 220 composed of the electroless metal plating film 202 and the electrolytic metal plating layer 208 is formed on the insulating layer made of the cured resin film of the present embodiment by the semi-additive process (SAP). be able to.

Furthermore, on the printed wiring board composed of the core base material 100 and the buildup layer, a buildup layer is laminated as necessary, and the step of connecting layers and forming a circuit by a semi-additive process is repeated to obtain a multilayer. can be

As described above, the printed wiring board of the present embodiment is obtained.

Subsequently, as shown in FIG. 2(f), a buildup layer is laminated on the obtained printed wiring board as necessary, and the steps of interlayer connection and circuit formation are repeated by a semi-additive process. Then, if necessary, the solder resist layer 230 is laminated on both sides or one side of the printed wiring board.

The method of forming the solder resist layer 230 is not particularly limited. For example, a dry film type solder resist is laminated, exposed, and developed, or a printed liquid resist is exposed and developed. It is made by the method of forming.

Subsequently, by performing a reflow process, the semiconductor element 240 is fixed onto the connection terminals, which are part of the wiring pattern, via the solder bumps 250 . After that, the semiconductor element 240 , the solder bumps 250 and the like are sealed with the sealing material layer 260 .

Thus, the semiconductor package 200 shown in FIG. 2(f) is obtained.

（式（１）において、ｌはそれぞれ独立で０以上、６以下の整数であり、ｍはそれぞれ独立で１以上、５以下の整数であり、ｎは１以上、６以下の整数である。）
［２］
［１］に記載の熱硬化性樹脂組成物であって、
シアネートエステル樹脂、マレイミド化合物、ベンゾシクロブテン樹脂、ビニル樹脂、アクリレート化合物から選択される少なくとも一種をさらに含む、熱硬化性樹脂組成物。
［３］
［１］または［２］に記載の熱硬化性樹脂組成物であって、
熱可塑性樹脂をさらに含む、熱硬化性樹脂組成物。
［４］
［３］に記載の熱硬化性樹脂組成物であって、
上記熱可塑性樹脂が、フェノキシ樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリアミドイミド樹脂、ポリフェニレンエーエル樹脂から選択される少なくとも一種である熱硬化性樹脂組成物。
［５］
［１］乃至［４］のいずれか１つに記載の熱硬化性樹脂組成物であって、
上記無機充填材（Ｄ）がタルク、アルミナ、ガラス、シリカ、マイカ、ベーマイト、水酸化アルミニウム、および水酸化マグネシウムから選択される少なくとも一種である熱硬化性樹脂。
［６］
［１］乃至［５］のいずれか１つに記載の熱硬化性樹脂組成物であって、
上記無機充填材（Ｄ）の含有量が、上記熱硬化性樹脂組成物の全固形分１００質量％に対し、５０質量％以上、８５質量％以下である熱硬化性樹脂組成物。
［７］
［１］乃至［６］のいずれか１つに記載の熱硬化性樹脂組成物であって、
上記無機充填材（Ｄ）が、アミノ系、エポキシ系、チオール系の群から選択される少なくとも一種のシランカップリング剤で表面処理されたものである熱硬化性樹脂組成物。
［８］
キャリア基材と、
上記キャリア基材上に設けられている、［１］乃至［７］のいずれか１つに記載の熱硬化性樹脂組成物からなる樹脂膜と、を備える、キャリア付樹脂膜。
［９］
［１］乃至［７］のいずれか１つに記載の熱硬化性樹脂組成物を繊維基材に含浸してなる、プリプレグ。
［１０］
［１］乃至［７］のいずれか１つに記載の熱硬化性樹脂組成物の硬化物で構成された絶縁層を備える、プリント配線基板。
［１１］
［１０］に記載のプリント配線基板と、
上記プリント配線基板の回路層上に搭載された、または上記プリント配線基板に内蔵された半導体素子と、を備える、半導体装置。 Although the embodiments of the present invention have been described above with reference to the drawings, these are examples of the present invention, and various configurations other than those described above can also be adopted.
Examples of reference embodiments of the present invention are added below.
[1]
A thermosetting resin composition used for forming an insulating layer constituting a buildup layer of a multilayer printed wiring board,
an epoxy resin (A) having a softening point of 50° C. or higher;
an epoxy resin (B) that is liquid at room temperature;
an active ester compound (C) having a structural site represented by the following formula (1);
an inorganic filler (D);
A thermosetting resin composition comprising:

(In formula (1), l is each independently an integer of 0 or more and 6 or less, m is each independently an integer of 1 or more and 5 or less, and n is an integer of 1 or more and 6 or less.)
[2]
The thermosetting resin composition according to [1],
A thermosetting resin composition further comprising at least one selected from cyanate ester resins, maleimide compounds, benzocyclobutene resins, vinyl resins and acrylate compounds.
[3]
The thermosetting resin composition according to [1] or [2],
A thermosetting resin composition further comprising a thermoplastic resin.
[4]
The thermosetting resin composition according to [3],
The thermosetting resin composition, wherein the thermoplastic resin is at least one selected from phenoxy resins, polyimide resins, polyamide resins, polyamideimide resins, and polyphenylene ether resins.
[5]
The thermosetting resin composition according to any one of [1] to [4],
A thermosetting resin in which the inorganic filler (D) is at least one selected from talc, alumina, glass, silica, mica, boehmite, aluminum hydroxide, and magnesium hydroxide.
[6]
The thermosetting resin composition according to any one of [1] to [5],
A thermosetting resin composition in which the content of the inorganic filler (D) is 50% by mass or more and 85% by mass or less with respect to 100% by mass of the total solid content of the thermosetting resin composition.
[7]
The thermosetting resin composition according to any one of [1] to [6],
A thermosetting resin composition, wherein the inorganic filler (D) is surface-treated with at least one silane coupling agent selected from the group consisting of amino, epoxy and thiol.
[8]
a carrier substrate;
A resin film with a carrier, comprising: a resin film formed of the thermosetting resin composition according to any one of [1] to [7] provided on the carrier substrate.
[9]
A prepreg obtained by impregnating a fiber base material with the thermosetting resin composition according to any one of [1] to [7].
[10]
A printed wiring board comprising an insulating layer composed of a cured product of the thermosetting resin composition according to any one of [1] to [7].
[11]
The printed wiring board according to [10];
and a semiconductor element mounted on a circuit layer of the printed wiring board or embedded in the printed wiring board.

EXAMPLES The present invention will be described in detail below with reference to Examples, but the present invention is not limited to the description of these Examples.
(Preparation of thermosetting resin composition)
A varnish-like thermosetting resin composition (resin varnish P) was prepared for each example , reference example, and each comparative example.

First, each component was dissolved or dispersed at the solid content ratio shown in Table 1, adjusted with methyl ethyl ketone so that the non-volatile content was 70% by mass, and stirred using a high-speed stirrer to prepare resin varnish P.

Details of raw materials for each component in Table 1 are as follows.
(Thermosetting resin)
Epoxy resin A1: biphenyl aralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC-3000, epoxy equivalent 276 g / eq)
Epoxy resin A2: biphenyl aralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC-3500, epoxy equivalent 205 g / eq)
Epoxy resin A3: trihydroxyphenylmethane type epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER1032H60, epoxy equivalent 169 g/eq)
Epoxy resin A4: naphthylene ether type epoxy resin (manufactured by DIC, HP-6000, epoxy equivalent 250 g/eq)
Epoxy resin A5: Tetrafunctional naphthalene type epoxy resin (manufactured by DIC, HP-4710, epoxy equivalent 171 g/eq)
Epoxy resin B1: Bisphenol F type epoxy resin (manufactured by DIC, EPICLON, 830S, epoxy equivalent 170 g/eq, liquid at room temperature)
Epoxy resin B2: bifunctional dicyclopentadiene type epoxy resin (manufactured by ADEKA, EP-4088L, epoxy equivalent 170 g/eq, liquid at room temperature)
Epoxy resin B3: Triglycidylamine type epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER630, epoxy equivalent 96 g/eq, liquid at room temperature)
Epoxy resin B4: Bifunctional naphthalene type epoxy resin (manufactured by DIC, HP-4032D, epoxy equivalent 142 g/eq, liquid at room temperature)
Cyanate ester resin: phenol novolac type cyanate ester resin (PT-30, manufactured by Lonza)
Maleimide compound: biphenylaralkyl type maleimide (manufactured by Nippon Kayaku, MIR-3000)
Acrylate compound: ethoxylated isocyanuric acid triacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., A-9300)
Benzocyclobutene resin: divinyltetramethylsiloxane benzocyclobutene resin (manufactured by Dow Chemical Company, XUS-35077XUS)
(curing agent)
Active ester curing agent 1: an active ester resin having a structural site represented by formula (1) (manufactured by DIC, EXB-8100L-65T, active ester equivalent weight 245 g/eq)
Active ester curing agent 2: dicyclopentadiene type active ester resin (manufactured by DIC, HPC-8000-65T, active ester equivalent weight 223 g/eq)
(Thermoplastic resin)
Phenoxy resin 1: Esterified phenoxy resin (manufactured by Mitsubishi Chemical Corporation, YL7899)
Phenoxy resin 2: Phenoxy resin (manufactured by Mitsubishi Chemical Corporation, YX6900)
Polyphenylene ether resin: Terminal OH-containing polyphenylene ether resin (manufactured by SABI, SA90, number average molecular weight 1670)
Polyimide resin: silicone-modified polyimide resin (4,4'-bisphenol A acid dianhydride and 4,4'-oxydiphthalic anhydride as acid anhydrides, 2,2'-bis(trifluoromethyl)benzidine and α as diamines , ω-bis(3-aminopropyl) polydimethylsiloxane (average molecular weight 836), acid anhydride molar ratio 50/50 mol%, diamine 80/20 mol%, weight average molecular weight 49000)
(Inorganic filler)
Inorganic filler: spherical silica particles (manufactured by Admatechs, SC4050 treated with aminophenylpropyltrimethoxysilane, average particle size 1.1 μm)
(coupling agent)
Coupling agent: aminophenylpropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-573)
(Curing accelerator)
Amine compound: N,N-dimethylaminopyridine (resin film with carrier: production of resin sheet)
The obtained resin varnish P was applied to one side of a PET film having a thickness of 38 μm using a comma coater so that the total thickness of the resin layer after drying was 30 μm. After drying for 3 minutes, a resin sheet (resin film with carrier) in which an insulating film was laminated on the PET film was obtained.
(Printed wiring board)
Using a two-stage build-up laminator (CVP300, manufactured by Nichigo-Morton Co., Ltd.), a laminate was produced from a resin sheet (resin film 1 with carrier) having a thickness of 30 μm. Specifically, ELC-4785TH-G (manufactured by Sumitomo Bakelite Co., Ltd., copper foil 12 μm) with a thickness of 100 μm is used, holes are drilled at predetermined locations, electroless plating is performed to achieve conduction, and copper foil was etched to prepare a core layer of 60% residual copper having a circuit forming surface. Further, the resin film of the resin film with a carrier was cut into sheets, set in the CVP300, temporarily attached to the core layer, and subjected to vacuum lamination in a vacuum laminator at 110° C. and 0.8 MPa for 30 seconds.

Then, it was smoothed by hot pressing at 110° C. and 0.6 MPa for 60 seconds using a hot pressing device of CPV300 manufactured by Nichigo-Morton.

Thereafter, the obtained laminate was placed in a hot air dryer at 160° C. for 60 minutes, after which the PET film was peeled off and the thermosetting resin of the resin film was cured.

Next, via holes were formed in the obtained laminate by a carbonic acid laser. The inside of the via and the surface of the resin layer were immersed in a swelling liquid (Swelling Dip Securigant P, manufactured by Atotech Japan Co., Ltd.) for 5 minutes at 60 ° C., and further immersed in an aqueous solution of potassium permanganate at 80 ° C. (Concentrate, manufactured by Atotech Japan Co., Ltd.). Compact CP: Sodium permanganate concentration 60 g/l, NaOH concentration 45 g/l)), neutralized and roughened.

After going through the steps of degreasing, applying a catalyst, and activating, an electroless copper plating film of about 0.5 μm is formed, a resist is formed, and a pattern electroplated copper of 20 μm is formed using the electroless copper plating film as a power supply layer. processed the circuit. Next, after performing annealing treatment at 200° C. for 60 minutes in a hot air dryer, the power supply layer was removed by flash etching. The same process was repeated once more, and combined with the inner layer circuit, a 6-layer board was produced. Next, a solder resist layer was formed, and openings were formed so as to expose semiconductor element mounting pads and the like. Finally, on the circuit layer exposed from the solder resist layer, a plating layer consisting of an electroless nickel plating layer of 3 μm and an electroless gold plating layer of 0.1 μm is formed thereon. It was cut into a size of ×50 mm to obtain a printed wiring board.
(Production of semiconductor package)
For the semiconductor package, a semiconductor element (TEG chip, size 10 mm×10 mm, thickness 0.1 mm) having solder bumps was mounted on the obtained printed wiring board by thermocompression bonding using a flip chip bonder. Next, after the solder bumps were melted and bonded in an IR reflow oven, a liquid sealing resin (CRP-4152S manufactured by Sumitomo Bakelite Co., Ltd.) was filled, and then the liquid sealing resin was cured to obtain a semiconductor package. The liquid sealing resin was cured at a temperature of 150° C. for 120 minutes. The solder bumps of the semiconductor element were formed of eutectic Sn/Pb composition. Finally, it was singulated with a router to obtain a semiconductor package having a size of 14 mm×14 mm.

As described above, a resin film with a carrier, a printed wiring board, and a semiconductor package were produced using the resin varnish P (thermosetting resin composition) obtained in each example , reference example, and each comparative example. These were evaluated as follows. Table 1 shows the evaluation results.
(cured product)
Four layers of the resin film with a carrier having a thickness of 30 μm were stacked, and a copper foil was used to heat and press under the press conditions of 200° C. and 1 kgf/mm ² for 2 hours using a hot press to cure the resin film. . Next, the copper foil of the resulting cured product was removed by etching to produce a cured product as a sample.
(Dielectric loss tangent)
The dielectric loss tangent at 1 GHz of the obtained cured product was measured by the cavity resonator method.
(Surface roughness Ra, peel strength)
Using the obtained printed wiring board, the peel strength at 23° C. after the roughening treatment was measured according to JIS C-6481:1996.

Here, the surface roughness Ra after the roughening treatment was evaluated by measuring with a non-contact three-dimensional optical interference type surface roughness meter (WYKO NT1100 manufactured by Veeco). The surface roughness Ra was measured at 10 points, and the average value of the 10 points was taken.
(Moisture absorption and heat resistance test)
The resulting semiconductor package was pretreated in accordance with JEDEC (Level 1) at a temperature of 85°C, a humidity of 85%, and a time of 168 hours. The equipment was used to evaluate the plating inside vias and the plating formed with wiring. Each code is as follows.
○: No plating blisters △: Up to two reflows, no plating blisters ×: Plating blisters with one reflow or less (smear removability)
The periphery of the bottom of the blind via hole was observed with a scanning electron microscope (SEM), and the maximum smear length from the wall surface of the bottom of the via hole was measured from the obtained image. The samples used were those inside the vias in the manufacturing process of the printed wiring board and those after the surface of the resin layer had been roughened. The desmearing property of each code is as follows.
◎: Maximum smear length is less than 2 μm ○: Maximum smear length is 2 μm or more and less than 3.5 μm ×: Maximum smear length is 3.5 μm or more (insulation test)
Insulation reliability evaluation of the fine circuit pattern of L/S=15/15 μm of the obtained printed wiring board was performed. The insulation resistance in continuous humidity was evaluated under the conditions of a temperature of 130° C., a humidity of 98% and an applied voltage of 5.0V. A resistance value of 10 ⁶ Ω or less was defined as failure. Evaluation criteria are as follows.
○: No failures for 200 hours or more △: Failures for 100 hours or more and less than 200 hours ×: Failures for less than 100 hours

比較例１および２の熱硬化性樹脂組成物を使用した場合、誘電正接が高くなるため、伝送損失が大きくなると考えられる。比較例１の熱硬化性樹脂組成物を使用した場合、スミア除去性に劣る。比較例２の熱硬化性樹脂組成物を使用した場合、めっきのピール強度が低く、Ｒａも大きくなることからＳＡＰ特性が低下することが分かった。また、比較例１および２の熱硬化性樹脂組成物を使用した場合、吸湿耐熱性や絶縁性に劣ることが分かった。

When the thermosetting resin compositions of Comparative Examples 1 and 2 are used, the dielectric loss tangent is increased, and thus the transmission loss is considered to be increased. When the thermosetting resin composition of Comparative Example 1 was used, the smear removability was poor. It was found that when the thermosetting resin composition of Comparative Example 2 was used, the peel strength of the plating was low and the Ra was large, resulting in deterioration of the SAP characteristics. Moreover, when the thermosetting resin compositions of Comparative Examples 1 and 2 were used, it was found that the moisture absorption heat resistance and insulation properties were inferior.

On the other hand, by using the thermosetting resin compositions of Examples 1 to 15, it was found that an insulating layer having a low dielectric loss tangent and improved SAP characteristics due to the low surface roughness could be realized. . It also excels in removing smear from the bottom of blind vias. It has been found that this insulating layer is suitable for a build-up layer of a printed wiring board. Moreover, it was found that by using the thermosetting resin compositions of Examples 1 to 15, it is possible to obtain a build-up substrate excellent in insulation and a semiconductor device excellent in reflow heat resistance.

Although the present invention has been described in more detail based on the examples, these are examples of the present invention, and various configurations other than those described above can be employed.

10 resin film with carrier 12 resin film with carrier 20 insulating film 30 primer layer 40 carrier substrate 100 core layer 102 insulating layer 104 via hole 106 electroless metal plating film 108 metal layer 200 semiconductor package 202 electroless metal plating film 204 resist 206 opening Part 208 Electrolytic metal plating layer 210 Opening 220 Metal layer 230 Solder resist layer 240 Semiconductor element 250 Solder bump 260 Encapsulant layer

Claims (11)

A thermosetting resin composition used for forming an insulating layer constituting a buildup layer of a multilayer printed wiring board,
an epoxy resin (A) having a softening point of 50° C. or higher;
an epoxy resin (B) that is liquid at room temperature;
an active ester compound (C) having a structural site represented by the following formula (1);
an inorganic filler (D);
characterized by comprising
The content of the epoxy resin (B), which is liquid at room temperature, is 10% by mass (non-volatile matter), based on the total amount of the epoxy resin (A) having a softening point of 50 ° C. or higher and the epoxy resin (B), which is liquid at room temperature. % or more and 35% or less by mass,
The active ester compound ( A thermosetting resin composition in which the content of C) is in the range of 40 % by mass or more and 70% by mass or less. However, the thermosetting resin composition having the composition shown below as <Composition 1> is excluded.

(In formula (1), l is each independently an integer of 0 or more and 6 or less, m is each independently an integer of 1 or more and 5 or less, and n is an integer of 1 or more and 6 or less.)
<Composition 1>
jER828 (bisphenol A type epoxy resin , liquid epoxy resin) 7 parts by mass,
jER807 (bisphenol F type epoxy resin , liquid epoxy resin) 7 parts by mass,
HP-4032 (naphthalene type epoxy resin, manufactured by DIC, semi-solid epoxy resin) 20 parts by mass,
HP-7200L (dicyclopentadiene type epoxy resin, manufactured by DIC, solid epoxy resin) 50 parts by mass,
LA-3018 (novolac resin, manufactured by DIC) 5 parts by mass,
EXB-8100L (active ester resin, manufactured by DIC) 50 parts by mass,
4-dimethylaminopyridine 0.2 parts by mass,
Cobalt (II) acetylacetonate 0.05 parts by mass,
FX-293 (phenoxy resin, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 15 parts by mass,
SO-C2 (silica, manufactured by Admatechs) 400 parts by mass,
10-(2,5-dihydroxyphenyl)-9,10-dihydro-9-oxa-10 phosphaphenanthrene-10-oxide 10 parts by mass,
Cyclohexanone 70 parts by mass,
20 parts by mass of toluene, and
A thermosetting resin composition containing 10 parts by mass of methyl ethyl ketone. The thermosetting resin composition according to claim 1,
A thermosetting resin composition further comprising at least one selected from cyanate ester resins, maleimide compounds, benzocyclobutene resins, vinyl resins and acrylate compounds. The thermosetting resin composition according to claim 1 or 2,
A thermosetting resin composition further comprising a thermoplastic resin. The thermosetting resin composition according to claim 3,
The thermosetting resin composition, wherein the thermoplastic resin is at least one selected from phenoxy resins, polyimide resins, polyamide resins, polyamideimide resins, and polyphenylene ether resins. The thermosetting resin composition according to any one of claims 1 to 4,
A thermosetting resin composition, wherein the inorganic filler (D) is at least one selected from talc, alumina, glass, silica, mica, boehmite, aluminum hydroxide, and magnesium hydroxide. The thermosetting resin composition according to any one of claims 1 to 5,
A thermosetting resin composition in which the content of the inorganic filler (D) is 50% by mass or more and 85% by mass or less with respect to 100% by mass of the total solid content of the thermosetting resin composition. The thermosetting resin composition according to any one of claims 1 to 6,
A thermosetting resin composition, wherein the inorganic filler (D) is surface-treated with at least one silane coupling agent selected from the group consisting of amino, epoxy and thiol. a carrier substrate;
A resin film with a carrier, comprising: a resin film formed of the thermosetting resin composition according to any one of claims 1 to 7, provided on the carrier substrate. A prepreg obtained by impregnating a fiber base material with the thermosetting resin composition according to any one of claims 1 to 7. A printed wiring board comprising an insulating layer composed of a cured product of the thermosetting resin composition according to any one of claims 1 to 7. A printed wiring board according to claim 10;
and a semiconductor element mounted on a circuit layer of the printed wiring board or embedded in the printed wiring board.

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