JP7176585B2 - Imaging device and imaging device - Google Patents

Description

The present invention relates to an imaging device and an imaging element .

2. Description of the Related Art Conventionally, an imaging device capable of switching between a rolling electronic shutter method and a global electronic shutter method is known (see Patent Document 1).
In a conventional imaging device, signal readout by the rolling electronic shutter method and the global electronic shutter method could not be performed in the readout period of one frame.

JP 2012-165104 A

An imaging device according to an aspect of the invention includes an imaging element having a pixel area in which a plurality of pixels that generate signals based on photoelectrically converted charges are arranged, and a plurality of pixels arranged in a first area of the pixel area. Control for controlling the imaging device so that the signals are read out from the first pixels by a global electronic shutter method and the signals are read out from a plurality of second pixels arranged in a second area of the pixel areas by a rolling electronic shutter method. a photoelectric conversion unit that converts light into an electric charge; a first readout circuit that is used when the control unit reads out the signal by a global electronic shutter method ; and a readout section including a second readout circuit used when reading out the signal by a shutter method, and the first pixels are arranged side by side in the column direction in the first area .
An image pickup device according to an aspect of the invention is an image pickup device including a pixel area in which a plurality of pixels are arranged, wherein the plurality of pixels includes a photoelectric conversion unit that converts light into an electric charge, and a global electronic shutter method that converts the photoelectric conversion unit into an electric charge. each of the plurality of Among pixels, a plurality of first pixels arranged in a first area of the pixel area are controlled to read out the signal by a global electronic shutter method, and among the plurality of pixels, a second area of the pixel area is controlled. A plurality of second pixels arranged in the first area are controlled so as to read out the signal by a rolling electronic shutter method, and the first pixels are arranged side by side in the column direction in the first area.

1 is a diagram showing a configuration example of a digital camera according to an embodiment of the present invention; FIG. It is a figure explaining the rough whole structure of an image pick-up element. It is a figure which shows the structural example of the conventional imaging system. FIG. 2 is a diagram showing a configuration of part of a unit pixel and a vertical drive circuit in a rolling electronic shutter type CMOS imaging device; FIG. 4 is a diagram showing drive timings of a rolling electronic shutter; FIG. 4 is a diagram showing an overall image of driving timing of the rolling electronic shutter; FIG. 2 is a diagram showing a partial configuration of a unit pixel and a vertical drive circuit in a global electronic shutter type CMOS imaging device; FIG. 4 is a diagram showing driving timing of the global electronic shutter; FIG. 4 is a diagram showing an overall image of driving timing of the global electronic shutter; 1 is a diagram illustrating a configuration example of an imaging system according to a first embodiment; FIG. FIG. 3 is a diagram showing the configuration of a part of a unit pixel and a vertical drive circuit of the imaging element in the first example; 4 is a diagram showing drive timings of the rolling electronic shutter and the global electronic shutter in the first embodiment; FIG. FIG. 4 is a diagram showing an overall image of driving timings of the rolling electronic shutter and the global electronic shutter in the first embodiment; FIG. 7 is a diagram showing a setting example of rows to be driven by the global electronic shutter; It is a figure which shows the structure of a part of unit pixel of an image pick-up element in 2nd Example, and a vertical drive circuit. FIG. 10 is a diagram showing driving timings of a rolling electronic shutter and a global electronic shutter in the second embodiment; FIG. 11 is a diagram showing an overall image of driving timings of the rolling electronic shutter and the global electronic shutter in the second embodiment; It is a figure which shows the structure of a part of unit pixel of an image pick-up element in 3rd Example, and a vertical drive circuit. FIG. 10 is a diagram showing a first setting example of block areas to be driven by the global electronic shutter; FIG. 11 is a diagram showing drive timings of the rolling electronic shutter and the global electronic shutter in the third embodiment; FIG. 10 is a diagram showing a second setting example of block areas to be driven by the global electronic shutter; FIG. 11 is a diagram showing a third setting example of block areas to be driven by the global electronic shutter; FIG. 12 is a diagram showing a fourth setting example of block areas to be driven by the global electronic shutter; FIG. 12 is a diagram for explaining the relationship between the arrangement of block areas and the setting of vertical and horizontal areas in the fourth embodiment; FIG. 10 is a diagram showing a setting example of areas to be driven by the global electronic shutter; It is a figure which shows the structural example of the imaging system in 2nd Embodiment. It is a figure which shows the structural example of the unit pixel in 2nd Embodiment. FIG. 10 is a diagram showing driving timings of a rolling electronic shutter and a global electronic shutter in the second embodiment; It is a figure explaining moving object detection. FIG. 3 shows examples of images obtained with a rolling electronic shutter and a global electronic shutter;

-First Embodiment-
A first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram showing the configuration of a digital camera according to this embodiment. The digital camera shown in FIG. 1 is an interchangeable lens type digital camera, and includes an interchangeable lens 110 and a camera body 100 , and the interchangeable lens 110 is attached to the camera body 100 via a lens attachment portion 105 .

The interchangeable lens 110 includes a lens control device 111, a zoom lens 112, a focus lens 113, an antivibration lens 114, an aperture 115, a lens operation section 116, and the like. The lens control device 111 includes peripheral components such as a CPU and a memory, and controls driving of the focus lens 113 and the diaphragm 115, detects the positions of the zoom lens 112 and the focus lens 113, transmits lens information to the camera body 100, and controls the camera body. It receives camera information from 100 and the like.

The camera body 100 has an imaging device 101, a body control device 102, a body operation section 103, a display section 104, and the like. The imaging device 101 is arranged on a planned imaging plane (planned focal plane) of the interchangeable lens 110 and photoelectrically converts a subject image formed by the interchangeable lens 110 . The body operation unit 103 includes a shutter button, focus detection area setting members, and the like. A display unit 104 is a liquid crystal monitor (rear monitor) mounted on the rear surface of the camera body 100 .

Body control device 102 includes a CPU and peripheral components such as memory. The body control device 102 performs drive control of the image sensor 101, image signal readout, focus detection calculation, focus adjustment of the interchangeable lens 110, image signal processing and recording, digital camera operation control, and the like. The body control device 102 communicates with the lens control device 111 via an electrical contact 106 provided on the lens mounting portion 105 to receive lens information and transmit camera information (defocus amount, aperture value, etc.).

A subject image is formed on the light-receiving surface of the image sensor 101 by the luminous flux that has passed through the interchangeable lens 110 . This subject image is photoelectrically converted by the imaging device 101 and an image signal is sent to the body control device 102 .

The body control device 102 detects the focus adjustment state (defocus amount) of the interchangeable lens 110 by performing focus detection calculation based on the image signal from the image pickup device 101, and transmits this defocus amount to the lens control device 111. send. The lens control device 111 calculates the drive amount of the focus lens 113 based on the received defocus amount, and drives the focus lens 113 with a motor or the like (not shown) based on this drive amount to move it to the in-focus position.

Also, the body control device 102 processes an image signal from the imaging device 101 to generate image data, and stores the image data in a memory card (not shown). At the same time, the body control device 102 causes the display unit 104 to display a through image based on the through image signal from the imaging device 101 .

(Overall configuration of imaging device)
FIG. 2 is a diagram for explaining a simplified overall configuration of the image sensor 101. As shown in FIG. Note that a power supply unit and detailed circuits are omitted in FIG. The imaging device 101 is composed of a CMOS image sensor. The imaging device 101 has a pixel area 201 , a vertical drive circuit 202 , a column circuit 203 , a horizontal transfer circuit 204 , an output circuit 205 and a control section 206 . The pixel area 201 has a plurality of pixels arranged two-dimensionally in the horizontal direction (row direction) and the vertical direction (column direction). Each pixel has a photodiode (photoelectric conversion unit) that accumulates electric charge according to the amount of incident light. Each pixel in the pixel area 201 is controlled by a vertical drive circuit 202 , and imaging signals corresponding to accumulated charges accumulated in the photodiodes by photoelectric conversion are sequentially output to the column circuit 203 . The column circuit 203 performs correlated double sampling (CDS) on the imaging signal from each pixel or applies a gain, thereby processing the imaging signal so that it can be easily handled by a subsequent circuit (not shown) as an image signal. The imaging signal processed by the column circuit 203 is sent to the output circuit 205 through the horizontal transfer circuit 204 and passed to the subsequent circuit as the output of the imaging element 101 . Here, an analog output sensor has been described as an example, but the basic idea does not change even if a digital output sensor is used. The control unit 206 controls each unit described above. The operations of the pixel area 201 , vertical drive circuit 202 , column circuit 203 , horizontal transfer circuit 204 , and output circuit 205 described below are all controlled by the controller 206 .

(conventional imaging system)
Here, before describing the imaging system according to the present embodiment, a configuration example of a conventional imaging system will be described. FIG. 3 is a diagram showing a configuration example of a conventional imaging system. In the conventional imaging system 500 , subject detection is performed by the subject detection unit 502 based on the image signal obtained by the image sensor 501 . Then, the processing execution unit 503 performs subject recognition processing based on the detection result of the subject detection unit 502, and based on the recognition result, moving object prediction processing for predicting the movement of a moving object, subject tracking processing for tracking the subject, We have performed AF (AutoFocus) area selection processing and the like. Depending on the application of such an imaging system 500, an imaging device driven by a rolling electronic shutter system or a CMOS imaging device driven by a global electronic shutter system is used.

(Rolling electronic shutter method)
FIG. 4 is a diagram showing the configuration of a unit pixel 620 in a rolling electronic shutter type CMOS imaging device 600. As shown in FIG. In FIG. 4, each unit pixel (one pixel) 620 has one photodiode PD and four transistors (transfer transistor TX-Tr, reset transistor RST-Tr, amplification transistor SF-Tr, select transistor SEL-Tr). These parts are connected as shown in FIG. The transfer transistor TX transfers charges accumulated in the photodiode PD. A floating diffusion (floating capacitance) FD functions as a charge holding portion that holds charges transferred from the photodiode PD. The amplification transistor SF-Tr forms a source follower circuit and outputs a signal corresponding to the potential of the floating diffusion FD. The reset transistor RST-Tr resets the potential of the floating diffusion FD and the charge of the photodiode PD. The select transistor SEL-Tr turns on when a pixel is selected, and connects the floating diffusion FD to the vertical signal line 640 . VDD in FIG. 4 indicates a power supply voltage.

In addition, FIG. 4 shows a part of the vertical drive circuit 630 and shows up to the connection of the driver Dr in the vertical drive circuit 630 . In FIG. 4, Vsel indicates a control pulse for the select transistor SEL-Tr. When the control pulse Vsel of only the selected row becomes High and the select transistor SEL-Tr is turned on, the floating diffusion FD to the vertical signal line 640 are connected. Vrst indicates a control pulse for the reset transistor RST-Tr. When resetting the photodiode PD or the floating diffusion FD, the control pulse Vrst becomes High and the reset transistor RST-Tr is turned on. Vtx indicates a control pulse for the transfer transistor TX-Tr. When transferring the charge accumulated in the photodiode PD, the control pulse Vtx becomes High and the transfer transistor TX-Tr is turned on.

FIG. 5 is a diagram showing the drive timing of the rolling electronic shutter, and shows, as an example, the operations of pixels on the first and second rows. In FIG. 5, the control pulse for the select transistor SEL-Tr on the first row is denoted by Vsel_1, and the control pulse for the select transistor SEL-Tr on the second row is denoted by Vsel_2. Control pulses for other transistors are the same. Also, the horizontal transfer of the first row is referred to as horizontal transfer 1, and the horizontal transfer of the second row is referred to as horizontal transfer 2. One horizontal period (1H) represents the length of time required to read out one row. The notation described above is the same for other drawings described below.

As shown in FIG. 5, between the first row and the second row, the timings of resetting the photodiode PD (PD_rst) and reading the photodiode PD (PD_read) are shifted by one horizontal period (1H). This is a characteristic of the rolling electronic shutter, and the period from resetting of the photodiode PD to readout of the photodiode PD is an accumulation time (shutter time). In each row, the photodiode PD is reset at the beginning of the accumulation time. In resetting the photodiode PD, unnecessary charges accumulated in the photodiode PD until then are discharged through the reset transistor RST-Tr. After the accumulation time has elapsed, the readout of the photodiode PD is performed. In reading out the photodiode PD, the charge accumulated in the photodiode PD during the accumulation time is transferred to the floating diffusion FD, and a signal corresponding to the accumulated charge is sent to the vertical signal line 640 through the amplification transistor SF-Tr and the select transistor SEL-Tr. read out to Note that resetting of the photodiode PD and reading of the photodiode PD are not limited to the illustrated timings. The imaging signal read out onto the vertical signal line 640 passes through the column circuit, is horizontally transferred row by row, and is output.

FIG. 6 is a diagram showing an overall image of driving timing of the rolling electronic shutter, in which the vertical axis indicates the number of rows and the horizontal axis indicates time. As described in FIG. 5, the accumulation time is between the reset (PD_rst) of the photodiode PD and the readout (PD_read) of the photodiode PD. Horizontal transfer is performed immediately after reading from the photodiode PD. As shown in FIG. 6, in the rolling electronic shutter, even if the interval of the accumulation time is the same, there is no accumulation simultaneity for each row.

(global electronic shutter method)
FIG. 7 is a diagram showing the configuration of a unit pixel 720 in a global electronic shutter type CMOS imaging device 700. As shown in FIG. In FIG. 7, one photodiode PD, one storage capacitor SC, and five transistors (transfer transistor TX-Tr, reset transistor RST-Tr, amplification transistor SF-Tr, select transistor SEL-Tr) are provided per unit pixel (one pixel) 720. , and a storage capacitor transfer transistor SG-Tr). These parts are connected as shown in FIG. In addition, FIG. 7 shows a part of the vertical drive circuit 730 and shows up to the connection of the driver Dr in the vertical drive circuit 730 .

As shown in FIG. 7, in the configuration of the unit pixel 720 of the global electronic shutter CMOS imaging device 700, in addition to the configuration similar to that of the unit pixel 620 of the rolling electronic shutter CMOS imaging device 600 shown in FIG. , a holding capacitor SC and a holding capacitor transfer transistor SG-Tr are added. The holding capacitor SC functions as a charge holding portion that holds accumulated charges transferred from the photodiode PD by the transfer transistor TX-Tr. The storage capacitor transfer transistor SG-Tr functions as a transfer section that transfers the accumulated charges held in the storage capacitor SC to the floating diffusion FD. A control pulse Vsg for controlling the storage capacitor transfer transistor SG-Tr is added as a control pulse. When transferring the accumulated charge held in the holding capacitor SG, the control pulse Vsg becomes High and the holding capacitor transfer transistor SG-Tr is turned on.

FIG. 8 is a diagram showing the driving timing of the global electronic shutter, and shows, as an example, the operations of pixels on the first and second rows. As shown in FIG. 8, the timings of resetting the photodiode PD and the storage capacitor SC (PDSC_rst) and reading the photodiode PD (PD_read) are the same between the first row and the second row. This is a feature of the global electronic shutter, and the period from the resetting of the photodiode PD and the storage capacitor SC to the readout of the photodiode PD is the accumulation time (shutter time). In each row, the photodiode PD and holding capacitor SC are reset at the beginning of the accumulation time. In resetting the photodiode PD and the holding capacitor SC, unnecessary charges accumulated in the photodiode PD and the holding capacitor SC until then are simultaneously discharged through the reset transistor RST-Tr for all pixels. After the accumulation time has elapsed, the readout of the photodiode PD is performed. In reading out the photodiode PD, the charge accumulated in the photodiode PD during the accumulation time is transferred to the storage capacitor SC at the same time for all pixels. After that, reading (SC_read) of the storage capacitor SC is sequentially performed for each row. In reading the holding capacitor SC, the charge held in the holding capacitor SC is transferred to the floating diffusion FD and read out to the vertical signal line 740 through the source follower SF-Tr and the select transistor SEL-Tr. The resetting of the photodiode PD and the holding capacitor SC, the reading of the photodiode PD, and the reading of the holding capacitor SC are not limited to the illustrated timings. The imaging signal read out onto the vertical signal line 740 passes through the column circuit, is horizontally transferred row by row, and is output.

FIG. 9 is a diagram showing an overall image of global electronic shutter driving timing, in which the vertical axis indicates the number of rows and the horizontal axis indicates time. As explained in FIG. 8, the accumulation time is between the resetting of the photodiode PD and the storage capacitor SC (PDSC_rst) and the reading of the photodiode PD (PD_read). After reading the photodiodes PD, reading of the storage capacitors SC (SC_read) and horizontal transfer are performed row by row. As shown in FIG. 9, in the global electronic shutter drive, there is simultaneity in accumulation in all pixels, but there is a time difference in reading from the storage capacitor SC for each row.

(Problems with Rolling Electronic Shutter and Global Electronic Shutter)
In the rolling electronic shutter, since there is no accumulation simultaneity for each row, a moving object appears distorted in the image. Even if an imaging device capable of driving the rolling electronic shutter at high speed is used, the distortion of the image cannot be eliminated in principle, and the problem of increased power consumption due to high speed operation also arises. Also, when the rolling electronic shutter is used for AF (image plane phase difference AF, contrast AF, etc.), there is no accumulation synchronicity in the vertical direction (same-row pixels), which is disadvantageous for focusing on a moving object. Since AF is performed by relying only on the accumulation simultaneity in the horizontal direction (accompanying pixels), accuracy is inferior.

On the other hand, when the global electronic shutter is used, the simultaneity of accumulation of all pixels can be ensured by simultaneously transferring the charge of the photodiode PD, so that image distortion does not occur. However, there is a time lag in reading from the storage capacitor SC, which causes variations in dark current and appears in the image, degrading the image quality. Pixels that are read out from the storage capacitor SC at the end are more affected by the dark current. For example, in applications such as surveillance cameras, the imaging element is always operating, and the image is likely to be affected by dark current due to heat generation. Therefore, it is necessary to take sufficient heat dissipation measures, and if the influence of dark current is large, it is necessary to consider correction means.

In the case of the global electronic shutter, resetting of the photodiode PD and charge transfer of the photodiode PD are performed simultaneously for all pixels, so an instantaneous current many times larger than that of the rolling electronic shutter flows. Since a voltage drop occurs due to this instantaneous current and the impedance of the power supply wiring, generally, the chip size of the imaging device is large, and the central portion of the imaging device is more susceptible to the voltage drop. Specifically, there is a possibility that the dynamic range of the output signal may be insufficient due to the voltage drop, or the normal operating range of the mounted circuit may be exceeded. Since these can cause deterioration in image quality, it is necessary to provide a waiting time until the instantaneous current subsides and the power supply voltage settles to a steady state, which causes a reduction in frame rate.

(Overview of image sensor of this embodiment)
Therefore, in the imaging device 101 of the present embodiment, in reading out the imaging signal for one frame, a part of the area is driven by the global electronic shutter, and the other area is driven by the rolling electronic shutter to solve the problem. . Some areas driven by the global electronic shutter include, for example, a subject recognition area and an AF area. In this way, the global electronic shutter is preferably used in the case where the pixel accumulation simultaneity is more functionally accurate.

The area to be driven by the global electronic shutter can be set by either line area setting by continuous lines or block area setting by XY addressing, and it is also possible to select a plurality of discrete areas. In the case of block area setting, the target pixel area is designated by the XY addresses, which makes the circuit for area setting complicated. In the row area setting, areas other than the target pixel area are often selected, but unlike the block area setting, the X address (horizontal direction) setting is not required, so the circuit can be kept simple.

(Imaging system of this embodiment)
FIG. 10 is a diagram showing a configuration example of an imaging system 300 of this embodiment. The imaging system 300 of this embodiment performs subject detection by the subject detection unit 302 based on the image signal obtained by the image sensor 101 . Then, the processing execution unit 303 performs subject recognition processing based on the detection result of the subject detection unit 302, and performs moving object prediction processing, subject tracking processing, and AF area selection processing based on the recognition result. Note that the body control device 102 of the camera body 100 functionally includes a subject detection unit 302 and a processing execution unit 303 . Further, unlike the conventional imaging system 500, the imaging system 300 of this embodiment is configured to feed back the moving object prediction result, the subject tracking result, and the AF area selection result obtained by the processing execution unit 303 to the imaging element 101. there is By mounting a circuit capable of holding such feedback information on the imaging device 101 side, an area to be operated by the global electronic shutter can be set for each frame based on the feedback information.

Note that the body control device 102 may set an area that the user wants to focus on on the shooting screen, an AF area, or the like using the body operation unit 103, and set the area set by the user as an area to be operated by the global electronic shutter. good. In addition to the AF area used in AF processing (automatic focus adjustment processing), the subject recognition area used in subject recognition processing, moving object prediction processing, and subject tracking processing, AF processing (automatic exposure calculation processing) and AWB processing (automatic white balance processing) The area used in the adjustment process) may also be set as an area operated by the global electronic shutter.

As described above, in the imaging device 101, the areas such as the subject recognition area and the AF area are operated with the global electronic shutter, and the other areas are operated with the rolling electronic shutter. Subject recognition processing and AF processing can be performed based on the output signal of the area operated by . In addition, the body control device 102 can combine the output signal of the area operated by the global electronic shutter and the output signal of the area operated by the rolling electronic shutter to read out the image signal of one image (one frame). .

In addition, the body control device 102 does not perform rolling electronic shutter driving for areas other than the target area in the imaging device 101, and operates only the target area with the global electronic shutter, thereby cropping only the target area (cutting out at the time of shooting). ) can also be read out. In this case, it becomes possible by changing the control logic of the peripheral circuit. For example, it can be realized by skipping (skipping) lines other than the set lines of the target area in the vertical drive circuit 202, or by narrowing down the area to be horizontally transferred based on the information of the horizontal area setting circuit. By cropping and reading only the target area in this manner, high-speed reading of only the target area (area having simultaneity of accumulation) becomes possible.

Alternatively, the readout of all pixels of the image sensor 101 and the high-speed readout of only the target area may be combined. The body control device 102, for example, performs all pixel readout in the previous frame, and performs readout of only the target area in the current frame. Then, the body control device 102 synthesizes the previous frame image obtained by reading out all pixels in the previous frame and the target area image obtained by cropping only the target area in the current frame to create an image of the entire shooting screen. At this time, the body control device 102 creates one image by inserting the target area image of the current frame into the image of the area other than the target area of the previous frame image. By doing so, even in the current frame in which only the target area is read out at high speed, it is possible to obtain an image of the entire shooting screen. It should be noted that when acquiring an image synthesized in this way, it is preferable that areas other than the target area are substantially unchanged between the current frame and the previous frame. Therefore, when the subject is a moving body, the body control device 102 can predict the movement of the moving body and widen the target area so that there is almost no change in areas other than the target area. It is possible to reduce discomfort in the synthesized image.

Such a method of synthesizing an all-pixel readout image and a crop-readout target area image is effective when the subject is moving at high speed. High-speed reading of only the target area by cropping enables high-speed tracking of a high-speed moving object, and by synthesizing it with an all-pixel readout image, it can be handled as a single image.

Next, an example for realizing rolling electronic shutter drive and global electronic shutter drive in this embodiment will be described.

(First embodiment)
First, a first example according to this embodiment will be described. The first embodiment is an example in which the area for global electronic shutter driving is set in continuous rows. FIG. 11 is a diagram showing the configuration of the unit pixel 220 of the image sensor 101 in the first example. FIG. 11 shows a part of the vertical drive circuit 202 and shows up to the connection of the driver Dr in the vertical drive circuit 202 . The unit pixel 220 has a photodiode PD and a readout section 250 that reads out an imaging signal corresponding to accumulated charges from the photodiode PD. The reading unit 250 has a transfer transistor TX-Tr, a storage capacitor SC, a storage capacitor transfer transistor SG-Tr, a floating diffusion FD, a reset transistor RST-Tr, an amplification transistor SF-Tr, and a select transistor SEL-Tr. Note that the configuration of such a unit pixel 220 is the same as that of the unit pixel 720 of the global electronic shutter type CMOS imaging device in FIG. 7, and thus the description thereof is omitted.

In the first embodiment, in the vertical drive circuit 202, the control pulse Vsg for controlling the storage capacitor transfer transistor SG-Tr is switched between the control pulse Vsg_gs for the global electronic shutter and the control pulse Vsg_rs for the rolling electronic shutter. A vertical switch SW1 is provided. Further, in the vertical drive circuit 202, a second vertical changeover switch SW2 is provided for switching between the control pulse Vtx_gs for the global electronic shutter and the control pulse Vtx_rs for the rolling electronic shutter with respect to the control pulse Vtx for controlling the transfer transistor TX-Tr. It is Switching of the first vertical changeover switch SW1 and the second vertical changeover switch SW2 is controlled by a vertical area setting pulse input from a vertical area setting circuit 210 in the vertical drive circuit 202 . A vertical area setting circuit 210 is a circuit for selecting a row (vertical area) for global electronic shutter driving. A vertical area setting pulse for the rolling electronic shutter is output to the row for which the electronic shutter is to be driven.

In the row set as the area for global electronic shutter driving, the first vertical selector switch SW1 is switched to the [1] side in response to the vertical area setting pulse, and the storage capacitor transfer transistor SG-Tr is controlled by the control pulse Vsg_gs. be. Also, the second vertical switch SW2 is switched to the [1] side in response to the vertical area setting pulse, and the transfer transistor TX-Tr is controlled by the control pulse Vtx_gs.

On the other hand, in the row set as the area for rolling electronic shutter driving, the first vertical selector switch SW1 is switched to the [2] side in response to the vertical area setting pulse, and the storage capacitor transfer transistor SG-Tr is turned on by the control pulse Vsg_rs. controlled. Also, the second vertical switch SW2 is switched to the [2] side in response to the vertical area setting pulse, and the transfer transistor TX-Tr is controlled by the control pulse Vtx_rs.

FIG. 12 is a diagram showing the timing of global electronic shutter drive (GS drive) and rolling electronic shutter drive (RS drive) in the first embodiment. FIG. 12 shows, as an example, the readout operation of one frame of imaging signals of six rows of pixels. The accumulation time is 4 hours, the first to third rows and the sixth row are driven by the rolling electronic shutter, and the fourth and fifth rows are driven by the global electronic shutter. The 3rd to 5th rows have simultaneity in accumulation time.

First, the rolling electronic shutter drive will be described by taking the first row as an example. During the High period of the 1H control pulses Vrst_1, Vtx_1, and Vsg_1, the reset transistor RST-Tr, the transfer transistor TX-Tr, and the storage capacitor transfer transistor SG-Tr are turned on, resetting the photodiode PD and resetting the storage capacitor SC. Reset is performed at the same time (PDSC_rst). At the 5th H after the accumulation time of 4H has passed, the control pulse Vsel_1 becomes High, the select transistor SEL-Tr is turned on, and the first row is selected. Then, after the control pulse Vrst_1 becomes Low and the reset transistor RST-T is turned off, the control pulses Vtx_1 and Vsg_1 become High at the same time, and the transfer transistor TX-Tr and the storage capacitor transfer transistor SG-Tr are turned on at the same time. . As a result, the charge of the photodiode PD accumulated during the accumulation time is transferred to the holding capacitor SC and the floating diffusion FD, and the imaging signal corresponding to the accumulated charge is transferred to the vertical signal line through the amplification transistor SF-Tr and the select transistor SEL-Tr. 240 (PD_read) and output by horizontal transfer. The same operation is performed for the second, third, and sixth rows of other rolling electronic shutter driving, and the driving timing is shifted by 1H each time the row advances.

Next, the global electronic shutter drive will be described using the fourth row as an example. In the 3H operation, similarly to the 3rd row, resetting of the photodiode PD and resetting of the storage capacitor SC are performed simultaneously (PDSC_rst). That is, the reset timing of the photodiode PD is the same timing as in the third row.

At the 7th H after the accumulation time of 4H, the control pulse Vtx_4 becomes High, the transfer transistor TX-Tr is turned on, and the accumulated charge accumulated during the accumulation time is transferred from the photodiode PD to the holding capacitor SC. (PD_read). The transfer timing from the photodiode PD to the storage capacitor SC is the same timing as in the third row, and it can be seen that the synchronism of the accumulation time with the third row is maintained. Since the readout operation is synchronized with the rolling electronic shutter drive, the readout operation from the storage capacitor SC is started after a certain period of time. In the example of the 4th row, at the 8th H after 1H has elapsed after the charge transfer to the storage capacitor SC, the control pulse Vsel_4 becomes High, the select transistor SEL-Tr is turned on, and the 4th row is selected. . Then, after the control pulse Vrst_4 becomes Low and the reset transistor RST-T is turned off, the control pulse Vsg_4 becomes High and the holding capacitor transfer transistor SG-Tr is turned on. As a result, the accumulated charge held in the holding capacitor SC is transferred to the floating diffusion FD, and a signal corresponding to the accumulated charge is read out to the vertical signal line 240 through the amplification transistor SF-Tr and the select transistor SEL-Tr (SC_read). , are output by horizontal transfer. The fifth row of other global electronic shutter driving is performed in the same manner, and the operation timing is such that the synchronism of the accumulation time with the third and fourth rows is maintained.

FIG. 13 is a diagram showing an overall image of the driving timing of the rolling electronic shutter and the global electronic shutter in the first embodiment, in which the vertical axis indicates the number of rows and the horizontal axis indicates time. The accumulation time is between resetting the photodiode PD and the storage capacitor SC (PDSC_rst) and reading the photodiode PD (PD_read). Only when the global electronic shutter is driven, reading of the storage capacitor SC (SC_read) is performed after reading of the photodiode PD (PD_read), and horizontal transfer is performed. As shown in FIG. 13, the 3rd to 5th rows have synchronous pixel accumulation, and the other rows have different pixel accumulation times.

Note that in the first embodiment, a plurality of row areas to be driven by the global electronic shutter can be set within the pixel area 201 . For example, FIG. 14 shows an example in which three row areas LA1, LA2, and LA3 are set as row areas to be driven by the global electronic shutter. The row areas LA1, LA2, and LA3 are regions separated from each other, and each row area includes a plurality of continuous rows. As described above, in the first embodiment, it is possible to set a plurality of row areas to be driven by the global electronic shutter, that is, areas having accumulation simultaneity.

(Second embodiment)
Next, a second example according to this embodiment will be described. As in the first embodiment, the second embodiment is also an example in which the area for global electronic shutter driving is set in continuous rows. In the second embodiment, as in the first embodiment, a plurality of row areas to be driven by the global electronic shutter can be set. FIG. 15 is a diagram showing the configuration of the unit pixel 220 of the image sensor 101 in the second embodiment. FIG. 15 shows a part of the vertical driving circuit 202 and shows up to the connection of the driver Dr in the vertical driving circuit 202. FIG. The configuration of the unit pixel 220 is the same as that of the first embodiment (that is, the configuration is the same as that of the unit pixel 720 of the global electronic shutter type CMOS imaging device in FIG. 7), and therefore the description thereof is omitted.

In the second embodiment, in the vertical drive circuit 202, the control pulse Vtx for controlling the transfer transistor TX-Tr is changed over between the control pulse Vtx_gs for the global electronic shutter and the control pulse Vtx_rs for the rolling electronic shutter. is provided. Switching of the vertical switch SW is controlled by a vertical area setting pulse input from a vertical area setting circuit 210 in the vertical drive circuit 202 . Note that unlike the first embodiment, the second embodiment does not have a vertical changeover switch for switching the control pulse Vsg for controlling the storage capacitor transfer transistor SG-Tr, so the configuration is simpler than that of the first embodiment. It has become.

In the row set as the area for global electronic shutter driving, the vertical changeover switch SW is switched to the [1] side in response to the vertical area setting pulse, and the transfer transistor TX-Tr is controlled by the control pulse Vtx_gs. On the other hand, in the row set as the area for rolling electronic shutter driving, the vertical changeover switch SW is switched to the [2] side in response to the vertical area setting pulse, and the transfer transistor TX-Tr is controlled by the control pulse Vtx_rs.

FIG. 16 is a diagram showing the timing of global electronic shutter drive and rolling electronic shutter drive in the second embodiment. FIG. 16 shows, as an example, the readout operation of one frame of imaging signals in six rows of pixels. The accumulation time is 4 hours, the first to third rows and the sixth row are driven by the rolling electronic shutter, and the fourth and fifth rows are driven by the global electronic shutter. The 3rd to 5th rows have simultaneity in accumulation time. Note that the description of the rolling electronic shutter drive timing used in the first to third lines and the sixth line is the same as in the first embodiment (FIG. 12), so it is omitted here.

Next, the global electronic shutter drive will be described using the fourth row as an example. At the 3rd H, the control pulse Vtx_3 becomes High, the transfer transistor TX-Tr is turned on, the charges accumulated in the photodiode PD are temporarily transferred to the storage capacitor SC, and the inside of the photodiode PD is emptied. This corresponds to the reset (PD_rst) of the photodiode PD. Thus, the reset timing of the photodiode PD is the same timing as in the third row.

After that, in the 4th H, during the High period of the control pulses Vrst_4 and Vsg_4, the reset transistor RST-Tr and the storage capacitor transfer transistor SG-Tr are turned on, and the charge of the photodiode PD that has been temporarily transferred to the storage capacitor SC is transferred to the storage capacitor. Reset through SC (SC_rst). This reset of the holding capacitor SC is matched with the rolling electronic shutter drive. This is because, in the second embodiment, the control pulse for the holding capacitor transfer transistor SG-Tr is common to both the rolling electronic shutter and the global electronic shutter.

Then, at the 7th H after the accumulation time 4H has elapsed from the 3rd H, the control pulse Vtx_4 becomes High, the transfer transistor TX-Tr is turned on, and the charge accumulated during the accumulation time is transferred from the photodiode PD to the storage capacitor SC. transferred to The transfer timing from the photodiode PD to the storage capacitor SC is the same timing as in the third row, and it can be seen that the synchronism of the accumulation time with the third row is maintained. Subsequent operations are the same as those of the first embodiment. That is, since the readout operation is synchronized with the rolling electronic shutter drive, the readout operation from the storage capacitor SC is started after a certain period of time. In the example of the 4th row, at the 8th H after 1H has elapsed after the charge transfer to the storage capacitor SC, the control pulse Vsel_4 becomes High, the select transistor SEL-Tr is turned on, and the 4th row is selected. . Then, after the control pulse Vrst_4 becomes Low and the reset transistor RST-T is turned off, the control pulse Vsg_4 becomes High and the holding capacitor transfer transistor SG-Tr is turned on. As a result, the charge held in the holding capacitor SC is transferred to the floating diffusion FD, and a signal corresponding to the accumulated charge is read out to the vertical signal line 240 through the amplification transistor SF-Tr and the select transistor SEL-Tr (SC_read). Output by horizontal transfer. The fifth row of the other global electronic shutter drives is operated in the same manner, and the drive timing is such that the accumulation time is synchronized with that of the third and fourth rows.

FIG. 17 is a diagram showing an overall image of driving timings of the rolling electronic shutter and the global electronic shutter of the second embodiment, in which the vertical axis indicates the number of rows and the horizontal axis indicates time. FIG. 17A shows an overall image of the driving timing illustrated in FIG. It can be seen that it is done after (PD_rst). Other than this, it is the same as the case of the first embodiment shown in FIG.

However, in the case of the second embodiment, unlike the first embodiment, the size of the area to be driven by the global electronic shutter is restricted. FIG. 17B is a diagram explaining this restriction. FIG. 17B shows an example in which the 4th to 7th rows are driven by the global electronic shutter. As shown in FIG. 17B, if the number of rows to be driven by the global electronic shutter is increased, the timing of resetting the storage capacitor SC (SC_rst) and reading the photodiode PD (PD_read) become the same in the seventh row. As a result, even if the charge accumulated in the photodiode PD is read out and transferred to the holding capacitor SC, the holding capacitor SC is reset, so the charge accumulated in the photodiode PD is reset. Furthermore, although not shown, if the global electronic shutter drive is also performed for the eighth and subsequent rows, the operation order of resetting the holding capacitor SC (SC_rst) and reading the photodiode PD (PD_read) is reversed. Similarly, the charge accumulated in the photodiode PD is reset by resetting the storage capacitor SC (SC_rst).

Therefore, in the second embodiment, when the accumulation time is 4 hours, the global electronic shutter can be driven up to 3 consecutive lines (simultaneous accumulation up to 4 consecutive lines). Therefore, the limit of the driving method of the second embodiment is that the number of horizontal periods α for determining the accumulation time and the number of consecutive lines β to be accumulated at the same time are the same, and there is a constraint that α≧β. However, in the second embodiment, although there are such restrictions, there is an advantage that only the control pulse Vtx for the transfer transistor TX-Tr can be switched between the rolling electronic shutter and the global electronic shutter. It is effective for applications that do not require a high-speed shutter (that is, long storage times are acceptable).

(Third embodiment)
The third embodiment is an example in which an area for global electronic shutter driving is set in a block area by XY addressing. FIG. 18A is a diagram showing the configuration of a unit pixel 220 of the image sensor 101 in the third embodiment. FIG. 18 shows a part of the vertical driving circuit 202 and shows up to the connection of the driver Dr in the vertical driving circuit 202 . The configuration of the unit pixel 220 in the third embodiment is similar to that of the first embodiment (that is, similar to the configuration of the unit pixel 720 of the global electronic shutter type CMOS imaging device in FIG. 7), and in addition, the storage capacitor transfer transistor SG-Tr and a second block area switch BS2 for controlling the transfer transistor TX-Tr. The first block area changeover switch BS1 and the second block area changeover switch BS2 are used for area setting in the X direction (horizontal direction). Switching of the first block area changeover switch BS1 and the second block area changeover switch BS2 is controlled by a horizontal area setting pulse input from the horizontal area setting circuit 260. FIG. Note that the first block area changeover switch BS1 and the second block area changeover switch BS2 are composed of transistors as shown in FIG. 18B, but are simplified in FIG. 18A.

A horizontal area setting circuit 260 is a circuit for selecting a column (horizontal area) for global electronic shutter driving. , and a horizontal area setting pulse for rolling electronic shutter is output to columns that do not include block areas.

Further, in the third embodiment, as in the first embodiment, the control pulse Vsg for controlling the storage capacitor transfer transistor SG-Tr is provided in the vertical drive circuit 202 as the control pulse Vsg_gs for the global electronic shutter and the control pulse Vsg_gs for the rolling electronic shutter. A first vertical change-over switch SW1 is provided for switching between the control pulse Vsg_rs for . Further, in the vertical drive circuit 202, a second vertical changeover switch SW2 is provided for switching between the control pulse Vtx_gs for the global electronic shutter and the control pulse Vtx_rs for the rolling electronic shutter with respect to the control pulse Vtx for controlling the transfer transistor TX-Tr. It is Switching of the first vertical changeover switch SW1 and the second vertical changeover switch SW2 is controlled by a vertical area setting pulse input from a vertical area setting circuit 210 in the vertical drive circuit 202 .

A vertical area setting circuit 210 outputs a vertical area setting pulse for the global electronic shutter to a row including a block area for global electronic shutter driving, and outputs a vertical area setting pulse for the rolling electronic shutter to a row not including the block area. Outputs the setting pulse.

Further, in the third embodiment, in addition to the configuration similar to that of the first embodiment, there are provided rolling electronic shutter drive lines sg_rs and tx_rs to which control pulses Vsg_rs and Vtx_rs for the rolling electronic shutter are input, and drivers Dr. is added. The rolling electronic shutter drive lines sg_rs and tx_rs are connected to the [1] side of the first block area changeover switch BS1 and the second block area changeover switch BS2, respectively.

In a row including a block area for global electronic shutter driving, the first vertical changeover switch SW1 and the second vertical changeover switch SW2 are each switched to the [1] side in response to the vertical area setting pulse. As a result, control pulses Vsg_gs and Vtx_gs for the global electronic shutter are input to the [2] sides of the first block area changeover switch BS1 and the second block area changeover switch BS2, respectively.

On the other hand, in a row that does not include a block area for global electronic shutter driving, the first vertical changeover switch SW1 and the second vertical changeover switch SW2 are switched to the [2] side in response to the vertical area setting pulse. As a result, the control pulses Vsg_rs and Vtx_rs for the rolling electronic shutter are input to the [2] sides of the first block area changeover switch BS1 and the second block area changeover switch BS2, respectively.

Also, in the column including the block area for global electronic shutter driving, the first block area changeover switch BS1 and the second block area changeover switch BS2 are switched to the [2] side in response to the horizontal area setting pulse.

On the other hand, in a column that does not include a block area for global electronic shutter driving, the first block area changeover switch BS1 and the second block area changeover switch BS2 are each switched to the [1] side in response to the horizontal area setting pulse.

With such a configuration, a designated block area can be driven by the global electronic shutter, and other areas can be driven by the rolling electronic shutter. It is also possible to set the block area to be driven by the global electronic shutter from the outside of the image sensor 101, and the block area may be set by register setting. By doing so, even when moving object prediction results and AF area selection results are fed back to the imaging device 101 side, it is possible to move or change the size of the block area for which the global electronic shutter is driven for each frame. . The block area may be set in units of several pixels or in units of several rows instead of in units of one pixel or one row, which makes it possible to simplify the logic circuit.

Next, preconditions for block area setting in the third embodiment are shown.
<Preconditions for block area setting>
(1) A block area can be set once for each frame.
(2) Even if there is one horizontal area setting circuit 260 and one vertical area setting circuit 210, a plurality of block areas can be set by one setting.
(3) When readout rows or readout columns overlap in a plurality of block areas, the overlapping range is set as one block area.

(First setting example of block area)
FIG. 19 is a diagram showing a first setting example of block areas to be driven by the global electronic shutter. This is an example in which the imaging device 101 has one horizontal area setting circuit 260 and one vertical area setting circuit 210 and sets one block area. As shown in FIG. 19A, a block area A is set in a pixel area 201 of m rows and n columns. All the first row (row a) where the block area A is located and the inside of the block area A have accumulation simultaneity for the signals to be read out. The first row (row a) in which block area A is located is driven by the rolling electronic shutter, and the rest of block area A other than the first row is driven by the global electronic shutter. As shown in FIG. 19B, all a-th rows and block area A have accumulation simultaneity.

FIG. 19C is a diagram showing how each region in the pixel area 201 is driven. Drive A indicates rolling electronic shutter drive. Drive A regions are regions in columns that do not contain block areas. In the drive A region, the first block area selector switch BS1 and the second block area selector switch BS2 are switched to the [1] side within the pixel, thereby switching the transfer transistor TX-Tr and the storage capacitor transfer transistor SG-Tr. It is controlled by control pulses Vsg_rs and Vtx_rs for the rolling electronic shutter.

Drive B also indicates a rolling electronic shutter drive. Drive B regions are regions that are in columns that contain block areas, but are not block areas. In the drive B region, the first block area changeover switch BS1 and the second block area changeover switch BS2 are switched to the [2] side within the pixel. Furthermore, by switching the first vertical switch SW1 and the second vertical switch SW2 in the vertical drive circuit 202 to the [2] side, the transfer transistor TX-Tr and the storage capacitor transfer transistor SG-Tr in the pixel roll. It is controlled by control pulses Vsg_rs and Vtx_rs for the electronic shutter.

Drive C indicates global electronic shutter drive. The drive C region is the block area region. In the drive C region, the first block area changeover switch BS1 and the second block area changeover switch BS2 are switched to the [2] side within the pixel. Furthermore, by switching the first vertical change-over switch SW1 and the second vertical change-over switch SW2 in the vertical drive circuit 202 to the [1] side, the transfer transistor TX-Tr and the storage capacitor transfer transistor SG-Tr in the pixel are globalized. It is controlled by control pulses Vsg_rs and Vtx_rs for the electronic shutter.

FIG. 20 is a diagram showing drive timings of the global electronic shutter and the rolling electronic shutter in the third embodiment. This timing chart shows the situation before and after the read start first row (row a) of the block area A in FIG. The rolling electronic shutter is driven up to the first row (a-th row) of the block area A, and "a-1th row and a-th row" in FIG. 20 show the timing. Next, from the (a+1)th line onward, the timings of the control pulse Vtx and the control pulse Vsg are different between inside and outside the block area A. FIG. As shown in FIG. 20, within the block area A, the storage timing is the same as that of the a-th row.

Pixels within block area A are controlled by control pulses Vtx_gs and Vsg_gs for global electronic shutter drive, and pixels outside block area A are controlled by control pulses Vtx_rs and Vsg_rs for rolling electronic shutter drive. . The control pulses Vsel, Vrst, and horizontal transfer have the same timing both inside and outside the block area A. FIG. Although not shown, readout within the block area A by the global electronic shutter drive and readout outside the block area A by the rolling electronic shutter drive are continued until the last readout row of the block area A is passed.

Next, an example of setting two block areas in the imaging device 101 having one horizontal area setting circuit 260 and one vertical area setting circuit 210 will be described. The positional relationship between the two block areas affects how the global electronic shutter is read out. Therefore, three patterns of block area setting examples 2 to 4 will be described below. These three patterns can cover all positional relationships between two block areas.

(Second setting example of block area)
FIG. 21 is a diagram showing a second setting example of block areas to be driven by the global electronic shutter. This example shows a case where readout rows and readout columns of two block areas do not overlap. As shown in FIG. 21A, block areas A and B are set in a pixel area 201 of m rows and n columns. FIG. 21(B) shows areas with accumulation simultaneity, and due to the preconditions for the block area setting described above, areas other than the block areas A and B are partially read out by driving the global electronic shutter. Area C, which is in the same row as block area A and in the same column as block area B, and area D, which is in the same row as block area B and in the same column as block area A, are areas that are not set as block areas but are read by global electronic shutter driving. be. Therefore, all of the a-th row and block areas A and C have accumulation simultaneity, and all of the b-th row and block areas B and area D have accumulation simultaneity.

Areas other than those set as block areas are partially driven by the global electronic shutter, but the simultaneity of accumulation within the same block area, which is important in the present invention, is maintained. Thus, it can be seen that even with the imaging device 101 having only one horizontal area setting circuit 260 and one vertical area setting circuit 210, simultaneity in accumulation of a plurality of block areas can be ensured.

FIG. 21C shows the driving status of each region in the pixel area 201. FIG. Descriptions of the respective areas of drive A, B, and C are the same as those of the first setting example of the block area, so the description is omitted.

(Third setting example of block area)
FIG. 22 is a diagram showing a third setting example of block areas to be driven by the global electronic shutter. This example shows a case where the read columns of two block areas overlap. As shown in FIG. 22A, block areas A and B are set in a pixel area 201 of m rows and n columns. FIG. 22(B) shows areas with accumulation simultaneity. Due to the preconditions for setting the block areas described above, parts other than the block areas A and B are also partially read by the global electronic shutter drive. According to the block area setting prerequisite (3), the horizontal area setting circuit 260 selects a range K (block from the left end of block area A) wider than each of block areas A and B as a column (horizontal area) to be driven by the global electronic shutter. area up to the right end of area B). An adjacent area C on the right side of the block area A and an adjacent area D on the left side of the block area B are not set as block areas, but are read out by global electronic shutter driving. Therefore, all of the a-th row and block areas A and C have accumulation simultaneity, and all of the b-th row and block areas B and area D have accumulation simultaneity.

As in the case of FIG. 21, areas other than the block area are partially driven by the global electronic shutter, but the simultaneity of accumulation within the same block area, which is important in the present invention, is maintained. Thus, it can be seen that even with the imaging device 101 having only one horizontal area setting circuit 260 and one vertical area setting circuit 210, simultaneity in accumulation of a plurality of block areas can be ensured.

FIG. 22C shows the driving status of each region in the pixel area 201. FIG. Descriptions of the respective areas of drive A, B, and C are the same as those of the first setting example of the block area, so the description is omitted.

(Fourth setting example of block area)
FIG. 23 is a diagram showing a fourth setting example of block areas to be driven by the global electronic shutter. This example shows a case where readout rows of two block areas overlap. As shown in FIG. 23A, block areas A and B are set in a pixel area 201 of m rows and n columns. FIG. 23B shows an area having accumulation simultaneity, and due to the preconditions for the block area setting described above, parts other than the block areas A and B are also partially read by the global electronic shutter drive. According to the precondition (3) for block area setting, the vertical area setting circuit 210 selects a row (vertical area) to be driven by the global electronic shutter in a range wider than the individual areas of block areas A and B (from the lower end of block area A to the block area). The range up to the upper end of B) J is set. The upper adjacent area C of the block area A and the lower adjacent area D of the block area B are not set as block areas but are read out by global electronic shutter driving. Therefore, all the a-th rows, block areas A and B, and areas C and D have accumulation simultaneity.

As in the case of FIGS. 21 and 22, areas other than the block area are partially global electronically shuttered, but the simultaneity of accumulation within the same block area, which is important in the present invention, is maintained. Thus, it can be seen that even with the imaging device 101 having only one horizontal area setting circuit 260 and one vertical area setting circuit 210, simultaneity in accumulation of a plurality of block areas can be ensured.

FIG. 23C shows the driving status of each region in the pixel area 201. FIG. Descriptions of the respective areas of drive A, B, and C are the same as those of the first setting example of the block area, so the description is omitted.

In the second to fourth setting examples of the block area described above, the case where two block areas are set has been described, but even when three or more block areas are set, accumulation of a plurality of block areas is possible. It is easy to see that simultaneity is ensured. However, in the case of having only one horizontal area setting circuit 260 and one vertical area setting circuit 210 as described above, the number of block areas increases, and the global electronic shutter drives areas other than the set locations of the block areas. Problems unique to the global electronic shutter, such as dark current variations and instantaneous current, begin to appear.

In order to suppress the problem of the global electronic shutter, it is preferable not to increase the area driven by the global electronic shutter outside the set block area. An embodiment for solving this problem will be described below as a fourth embodiment.

(Fourth embodiment)
The imaging device 101 according to the fourth example has two horizontal area setting circuits and two vertical area setting circuits. Although not shown, by providing two horizontal area setting circuits and two vertical area setting circuits, the horizontal changeover switch in the unit pixel 220 can be changed to three inputs and the vertical area setting circuit can be changed from the configuration shown in FIG. In the drive circuit 202, it is necessary to provide another set of output lines for the control pulse Vsg for the storage capacitor transfer transistor SG-Tr and the control pulse Vtx for the transfer transistor TX-Tr.

FIG. 24 is a diagram for explaining the relationship between the arrangement of block areas and the setting of vertical and horizontal areas in the fourth embodiment. FIGS. 24A, 24B, and 24C correspond to the arrangement of block areas in FIGS. 21A, 22A, and 23A, respectively. The image sensor 101 of the fourth embodiment includes two horizontal area setting circuits (first horizontal area setting circuit and second horizontal area setting circuit) and two vertical area setting circuits (first vertical area setting circuit and second vertical area setting circuit). area setting circuit). In FIGS. 24A, 24B, and 24C, for block area A, horizontal area A is set by the first horizontal area setting circuit, and vertical area A is set by the first vertical area setting circuit. set. For block area B, horizontal area B is set by the second horizontal area setting circuit, and vertical area B is set by the second vertical area setting circuit. In the case shown in FIG. 24A, the a-th row and block area A have accumulation simultaneity, and the b-th row and block area B have accumulation simultaneity. Also in the case shown in FIG. 24B, the a-th row and block area A have accumulation simultaneity, and the b-th row and block area B have accumulation simultaneity. In the case shown in FIG. 24(C), the a-th row and block area A have accumulation simultaneity, and the location other than block area A and b-th row and block area B have accumulation simultaneity.

By providing two horizontal area setting circuits and two vertical area setting circuits in this manner, two block areas can be associated with the horizontal area setting circuits and the vertical area setting circuits in a one-to-one correspondence. Only the set points can be read out by driving the global electronic shutter. If the number of horizontal area setting circuits and vertical area setting circuits is equal to or greater than the number of block areas, there will be no area to be driven by the global electronic shutter other than the set locations of the block areas, and the problem of global electronic shutter driving will be reduced. That is, by providing a plurality of horizontal area setting circuits and vertical area setting circuits, it is possible to cope with a plurality of block areas while suppressing the problem of driving the global electronic shutter.

However, when a plurality of horizontal area setting circuits and vertical area setting circuits are provided on a plane (two-dimensional plane) in the image pickup device 101, at the same time, multi-input block area switching switches in pixels and vertical driving are used. It is also necessary to add output lines for the control pulses Vsg and Vtx of the circuit 202 . A few circuits are sufficient, but as the number of circuits increases, the circuit configuration within the pixel and around the pixel area 201 becomes complicated, and furthermore, the number of control lines for driving the pixels also increases. Inevitably, the area of the photodiode PD has to be reduced, leading to deterioration in basic performance.

In order to avoid performance degradation caused by such a situation, it is effective to stack peripheral circuits and in-pixel switches in the pixel area 201 and mount them three-dimensionally instead of arranging multiple circuits on a plane. is.

According to the embodiment described above, the following effects are obtained.
(1) The image sensor 101 has a pixel 220 that includes a photodiode PD that converts light into electric charge and a readout unit 250 that reads an imaging signal generated by the electric charge photoelectrically converted by the photodiode PD. The control unit 206 of the image sensor 101 reads out the imaging signals of some of the pixels 220 by the first electronic shutter method, and reads out the imaging signals of the other pixels 220 by the second electronic shutter method different from the first electronic shutter method. to control the reading unit 250. With such a configuration, it is possible to obtain imaging signals by a plurality of electronic shutter methods within one frame.

(2) The first electronic shutter method described above is the global electronic shutter method, and the second electronic shutter method described above is the rolling electronic shutter method. The global electronic shutter method is used for areas where it is desirable to have pixel accumulation synchronicity, and the rolling electronic shutter method is used for other areas. We can make up for the shortcomings of each.

(3) The image sensor 101 includes a plurality of pixels 220 arranged two-dimensionally in row and column directions. Each pixel 220 has a photodiode PD that accumulates charges corresponding to the amount of incident light, and a readout section 250 that reads an imaging signal corresponding to the accumulated charges accumulated in the photodiode PD. The reading unit 250 is configured to be capable of both the global electronic shutter method and the rolling electronic shutter method. In the readout of imaging signals for one frame, the imaging signals are read from some of the plurality of pixels 220 by the global electronic shutter method, and the imaging signals from the remaining pixels of the plurality of pixels 220 are read by the rolling electronic shutter method. is read out. With such a configuration, it is possible to obtain an imaging signal by the rolling electronic shutter method and an imaging signal by the global electronic shutter method within one frame. The global electronic shutter method is used for areas where it is desirable to have pixel accumulation synchronicity, and the rolling electronic shutter method is used for other areas. We can make up for the shortcomings of each.

(4) The image pickup device 101 includes one vertical area setting circuit 210 that selects a row of pixels to be read out by the global electronic shutter method and one horizontal area setting circuit 260 that selects a column of pixels to be read out by the global electronic shutter method. As a result, it is possible to set a pixel block area to be read out by the global electronic shutter method with a simple configuration.

(5) In the camera body 100, the body control device 102 performs focus adjustment processing, exposure calculation processing, white balance adjustment processing, subject recognition processing, At least one of moving object prediction processing and subject tracking processing is executed. With such a configuration, the above-described processing can be performed using the imaging signal of the area having the pixel accumulation simultaneity. Also, the body control device 102 determines the pixels from which the imaging signals are read out by the global electronic shutter method in the imaging element 101 based on the result of the above-described processing. With such a configuration, the result of the above-described processing can be fed back to the setting of the area read out by the global electronic shutter method.

(4) The image sensor 101 includes a plurality of pixels 220 arranged two-dimensionally in row and column directions. Each pixel 220 has a photodiode PD that accumulates charges corresponding to the amount of incident light, and a readout section 250 that reads an imaging signal corresponding to the accumulated charges accumulated in the photodiode PD. The reading unit 250 is configured to be capable of both the global electronic shutter method and the rolling electronic shutter method. In the readout of imaging signals for one frame, the imaging signals are read from some of the plurality of pixels 220 by the global electronic shutter method, and the imaging signals from the remaining pixels of the plurality of pixels 220 are read by the rolling electronic shutter method. is read out. With such a configuration, it is possible to obtain an imaging signal by the rolling electronic shutter method and an imaging signal by the global electronic shutter method within one frame. The global electronic shutter method is used for areas where it is desirable to have pixel accumulation synchronicity, and the rolling electronic shutter method is used for other areas. We can make up for the shortcomings of each.

(5) The image sensor 101 includes one vertical area setting circuit 210 for selecting a row of pixels to be read out by the global electronic shutter method and one horizontal area setting circuit 260 for selecting a column of pixels to be read out by the global electronic shutter method. As a result, it is possible to set a pixel block area to be read out by the global electronic shutter method with a simple configuration.

-Second Embodiment-
Next, a second embodiment of the present invention will be described with reference to the drawings. Since the configuration of the digital camera and the overall configuration of the imaging device in the second embodiment are the same as the configuration of the digital camera (FIG. 1) and the overall configuration of the imaging device 101 (FIG. 2) in the first embodiment , the description is omitted. In reading out image signals for one frame, the image sensor 101 according to the second embodiment reads out image signals from all the pixels in the pixel area 201 by the rolling electronic shutter method. The pixels in the area are configured so that the imaging signal can be read out by the global electronic shutter method. Here, all of the pixels means pixels for generating an image of the entire shooting screen, including the case where some pixels such as defective pixels are excluded.

FIG. 25 is a diagram showing an example of an area (GS area) Ag set to drive the global electronic shutter within the pixel area 201. As shown in FIG. The body control device 102 sets the GS area Ag for the image sensor 101 . As shown in FIG. 25, a plurality of GS areas Ag can be set within the pixel area 201 . The shape of the GS area Ag can also be set to a horizontally long rectangle, a vertically long rectangle, a cross shape, or the like. As in the first embodiment, the GS area Ag includes an AF area used in AF processing, a subject recognition area used in subject recognition processing, moving object prediction processing, and subject tracking processing, as well as AF processing and AWB processing. An area that should have accumulation simultaneity is set, such as an area used in .

FIG. 26 is a diagram showing a configuration example of an imaging system 300 according to the second embodiment. An image signal (GS signal) read out from the GS area by global electronic shutter driving and an image signal (RS signal) read out from all the pixels by rolling electronic shutter driving are output from the image sensor 101, respectively. It is sent to the processing unit 305 . Note that the signal processing unit 305 is included in the body control device 102 of the camera body 100 .

The GS signal sent to the signal processing unit 305 is subjected to a predetermined offset by the offset circuit 310, and is multiplied by a predetermined gain by the gain circuit 311. 317. The AF/AE/AWB section 312 performs AF processing, AE processing, and AWB processing based on the GS signal. The RS signal sent to the signal processing section 305 is subjected to a predetermined offset by the offset circuit 314 , multiplied by a predetermined gain by the gain circuit 315 , and then sent to the addition section 313 . The adder 313 adds the GS signal and the RS signal to generate an image signal for one frame. The details of addition processing in the addition unit 313 will be described later. The image signal generated by the adder 313 is recorded in the memory 316 and subjected to predetermined image processing by the image processor 317 . Further, the image processing unit 317 performs subject recognition processing using the GS signal and RS signal, and performs moving object prediction processing, subject tracking processing, AF area selection processing, and the like based on the recognition result. The moving object prediction result, subject tracking result, and AF area selection result obtained by the image processing unit 317 are fed back to the GS area setting, and the GS area is set based on these results.

FIG. 27 is a diagram showing the configuration of a unit pixel 220 of the image sensor 101 according to the second embodiment. A unit pixel (one pixel) 220 has one photodiode PD and a readout section 250 that reads out an imaging signal corresponding to accumulated charges from the photodiode PD. The readout section 250 has an RS readout circuit for the rolling electronic shutter and a GS readout circuit for the global electronic shutter, which are respectively connected to the photodiodes PD.

The RS readout circuit has a transfer transistor TX1, a floating diffusion FD1, an amplification transistor SF1, and a select transistor S1. The transfer transistor TX1 transfers charges accumulated in the photodiode PD. The floating diffusion FD functions as a charge holding portion that holds accumulated charges transferred from the photodiode PD. The amplification transistor SF1 forms a source follower circuit and outputs a signal corresponding to the potential of the floating diffusion FD. The select transistor S1 is turned on when a pixel is selected, and connects the floating diffusion FD1 to the output line Out1. These parts are connected as shown in FIG. The RS readout circuit reads the charge accumulated in the photodiode PD by rolling electronic shutter driving, and outputs an imaging signal corresponding to the accumulated charge to the output line Out1.

The GS readout circuit has a storage capacitor SG, a transfer transistor TX2, a floating diffusion FD2, an amplification transistor SF2, and a select transistor S2. The holding capacitor SG functions as a charge holding portion that holds charges accumulated in the photodiode PD. When the gate of the storage capacitor SG is opened, the charges accumulated in the photodiode PD are transferred to the storage capacitor SG. The transfer transistor TX2 transfers the charge held in the holding capacitor SG. The floating diffusion FD1 functions as a charge holding portion that holds accumulated charges transferred by the transfer transistor TX2. The amplification transistor SF2 forms a source follower circuit and outputs a signal corresponding to the potential of the floating diffusion FD. The select transistor S2 is turned on when a pixel is selected, and connects the floating diffusion FD2 to the output line Out2. These parts are connected as shown in FIG. The GS readout circuit reads out the accumulated charge of the photodiode PD by driving the global electronic shutter, and outputs an imaging signal corresponding to the accumulated charge to the output line Out2.

The reset transistor Reset is commonly provided for the RS readout circuit and the GS readout circuit. A reset transistor Reset resets the photodiode PD, the storage capacitor SG, and the floating diffusions FD1 and FD2.

FIG. 28 is a diagram showing driving timings of the rolling electronic shutter and the global electronic shutter in the second embodiment. FIG. 28 shows control pulses for the transfer transistor TX1 of the RS readout circuit and the storage capacitor SG and transfer transistor TX2 of the GS readout circuit in reading out one frame. It is assumed that the pixel area 201 has n rows of pixels, and (1) to (n) in FIG. 28 represent the 1st row to the nth row of pixels. Also, here, it is assumed that the i-th to j-th pixels are set as the GS area driven by the global electronic shutter.

First, at times r1 to r2, the reset transistor Reset and the transfer transistor TX1 are sequentially turned on in the 1st to nth rows to reset the photodiodes PD and start charge accumulation in the rolling electronic shutter.

Then, at time g1, in the rows (i-th to j-th rows) set as the GS area, the transfer transistors TX1 are turned on at the same time, and the charge accumulated in the photodiodes PD is transferred to the floating diffusion FD1. and the photodiode PD is reset. As a result, the electric charge accumulation of the rolling electronic shutter is temporarily interrupted, the accumulated electric charges up to that point are held in the floating diffusion FD1, and the electric charge accumulation of the global electronic shutter is started. In the rows not set as the GS area (other than the i-th to j-th rows), charge accumulation by the rolling electronic shutter continues.

Then, at time g2 after a predetermined accumulation time (GS accumulation time) has passed, the gates of the storage capacitors SG are simultaneously opened in the rows (i-th to j-th rows) set as the GS area, and the photodiodes PD is transferred to the storage capacitor SG, and the photodiode PD is reset. As a result, the charge accumulation of the global electronic shutter is terminated, the charge accumulated up to that point is held in the holding capacitor SG, and the charge accumulation of the rolling electronic shutter is restarted.

At times g3 to g4, in the rows (i-th to j-th rows) set as the GS area, the transfer transistors TX2 are sequentially turned on, and the accumulated charges held in the holding capacitors SG are transferred to the floating diffusion FD2. An imaging signal (GS signal) corresponding to the transferred accumulated charge is read from the output line Out2.

At times r3 to r4 after a predetermined accumulation time (RS accumulation time) has elapsed from the start of accumulation of the rolling electronic shutter in each row from the first row to the nth row, the transfer transistor TX1 is sequentially turned on in each row, and the photodiode The charge accumulated in the PD is transferred to the floating diffusion FD1, and an imaging signal (RS signal) corresponding to the charge accumulated is read from the output line Out1. In the rows (i-th to j-th rows) set as the GS area, the accumulated charges after time g2 are transferred to and held in the floating diffusion FD1 at time g1, and the charges accumulated before time g1 are transferred to the floating diffusion FD1 at time g1. It is added to the charge and read from the output line Out1 as an RS signal.

In the rows set as the GS area (rows i to j), as described above, part of the charge accumulation time in the rolling electronic shutter is used as the charge accumulation time in the global electronic shutter. The charge accumulation time in the electronic shutter is reduced by the charge accumulation time in the global electronic shutter. Therefore, for rows set as the GS area, an appropriate image signal can be obtained by adding the GS signal and the RS signal in the adder 313 of the signal processor 305 described above. That is, the adder 313 acquires image signals using the GS signal and the RS signal for pixels in the GS area, and acquires image signals using the RS signal for pixels other than the GS area.

Also, with reference to FIG. 28, an example of performing charge accumulation in the global electronic shutter during charge accumulation in the rolling electronic shutter has been described. However, the timing of charge accumulation in the global electronic shutter may be any timing from after reading out the accumulated charges in the rolling electronic shutter of the previous frame to before reading out the accumulated charges in the rolling electronic shutter of the current frame.

For example, in FIG. 28, in the rows (i-th to j-th rows) set as the GS area, the start of charge accumulation in the rolling electronic shutter is later than the end of charge accumulation in the global electronic shutter (time g2). may In this case, since charge accumulation in the rolling electronic shutter is not interrupted by charge accumulation in the global electronic shutter, the addition unit 313 does not add the GS signal and the RS signal, and only the RS signal is used as an image signal.

In FIG. 28, in the rows set as the GS area (i-th to j-th rows), the timing of the start of charge accumulation in the rolling electronic shutter is from the start of charge accumulation in the global electronic shutter (time g1) to the charge accumulation It is conceivable that it may be during the end (time g2). In this case, after the start of charge accumulation in the global electronic shutter, the transfer transistor TX1 is turned on and the photodiode PD is reset at the timing of the start of charge accumulation in the rolling electronic shutter. Therefore, the charge accumulated from this reset timing to the end of charge accumulation in the global electronic shutter (time g2) is read as the GS signal, and the accumulation time of the GS signal is reduced. Therefore, in this case, in the image sensor 101 or in the signal processing unit 305, the GS signal is corrected based on the ratio of the accumulation time that has decreased with respect to the predetermined accumulation time so that the GS signal has a predetermined accumulation time. do.

Also, in FIG. 28, an example in which the global electronic shutter is performed once in reading out one frame has been described, but it may be performed multiple times.

(moving object detection)
The image processing unit 317 can perform moving object detection using the GS signal and the RS signal obtained by reading one frame. FIG. 29 is a diagram for explaining such moving object detection. FIGS. 29A to 29C show movements of a moving object P, which is a subject, at times t0 to t2. From time t0 to t2, the moving body P is moving from right to left. The GS area Ag to be driven by the global electronic shutter is set so as to include the moving object P. FIG. 29D shows an image (GS image) obtained by the global electronic shutter at time t1. In the GS image, as shown in FIG. 29D, the moving object P is captured without distortion in the GS area Ag. FIG. 29E shows an image (RS image) obtained by the rolling electronic shutter from time t0 to t2. Since the moving body P moves from time t0 to t2, the moving body P appears distorted in the RS image as shown in FIG. 29(E).

As described above, when the subject is a moving object, it appears without distortion in the GS image, but appears distorted in the RS image, resulting in different images between the GS image and the RS image. On the other hand, when the subject is not moving (still), both the GS image and the RS image are captured without distortion, so the GS image and the RS image are substantially the same image. Based on this, the image processing unit 317 performs feature point detection (edge detection, etc.) of the subject using the GS signal and the RS signal in the GS area, respectively. are compared, and if there is a difference equal to or greater than a predetermined value, it is determined that the subject included in the GS area is a moving body. Furthermore, the image processing unit 317 may detect the amount of distortion of the RS signal in the GS area, and detect the moving speed of the moving object based on the amount of distortion.

(Addition of GS signal and RS signal)
As described above, the accumulation time of the RS signal in the GS area is shorter than the accumulation time of the global electronic shutter. At this time, if there is no distortion in the RS signal, addition section 313 may simply add the RS signal and the GS signal in the GS area. However, when the RS signal is distorted, simple addition of the RS signal and the GS signal in the GS area results in a blurry image due to the addition of the distorted image and the undistorted image. Therefore, when the RS signal is distorted, the image signal is generated by the following method instead of simply adding the RS signal and the GS signal in the GS area.

(1) Case where distortion in RS signal is within GS area FIGS. 30A and 30B are diagrams showing examples of a GS image and an RS image when distortion in an RS signal is within GS area Ag. . In FIGS. 30A and 30B, the moving object P is within the GS area Ag, and the distortion of the RS image in FIG. 30B is within the GS area Ag. In this case, the image processing unit 317 uses only the GS signal in the GS area, combines the GS signal with the RS signal outside the GS area, and generates an image signal for one frame. Note that since the GS signal and the RS signal have different accumulation times, the image processing unit 317 corrects the GS signal so as to correspond to the RS signal by applying a gain or offset correction to the GS signal. An image signal for one frame is generated.

(2) Distortion in RS Signal Outside GS Area FIGS. 30C and 30D are diagrams showing examples of the GS image and RS image when the distortion in the RS signal is outside the GS area Ag. . In FIGS. 30(C) and (D), the moving object P protrudes from the GS area Ag, and the distortion of the RS image in FIG. 30(B) protrudes outside the GS area Ag. In this case, the image processing unit 317 employs only the RS signal in the GS area Ag, and uses only the RS signal to generate one frame of image signal. Note that since the RS signal in the GS area Ag has a different accumulation time from the RS signal outside the GS area, the image processing unit 317 applies a gain or offset correction to the RS signal in the GS area Ag. is corrected so as to correspond to the RS signal outside the GS area, and an image signal for one frame is generated.

Note that the image processing unit 317 also determines the size of the subject when recognizing the subject from the image signal obtained from the image sensor 101. Based on the determination result, the GS area is adjusted so that the subject is included in the GS area. Set size. Therefore, normally, the distortion in the RS signal is within the GS area as in (1) above, but in the first frame, when the subject moves abruptly, or when the composition is changed, the above ( As in 2), the distortion in the RS signal may be outside the GS area. In this case, in the next frame, the distortion in the RS signal is within the GS area as in (1) above by feeding back the determination result of the object size by the image processing unit 317 to the setting of the GS area.

According to the embodiment described above, the following effects are obtained.
(1) The image sensor 101 has a pixel 220 that includes a photodiode PD that converts light into electric charge and a readout unit 250 that reads an imaging signal generated by the electric charge photoelectrically converted by the photodiode PD. The control unit 206 of the image sensor 101 reads out the imaging signals of some of the pixels 220 by the first electronic shutter method, and reads out the imaging signals of the other pixels 220 by the second electronic shutter method different from the first electronic shutter method. to control the reading unit 250. With such a configuration, it is possible to obtain imaging signals by a plurality of electronic shutter methods within one frame.

(2) The image sensor 101 includes a plurality of pixels 220 arranged two-dimensionally in row and column directions. Each pixel 220 has a photodiode PD that accumulates charges corresponding to the amount of incident light, and a readout section 250 that reads an imaging signal corresponding to the accumulated charges accumulated in the photodiode PD. The reading unit 250 is configured to be capable of both the global electronic shutter method and the rolling electronic shutter method. In reading out the imaging signal for one frame, the imaging signal is read out from all of the plurality of pixels 220 by the rolling electronic shutter method, and the imaging signal is read out from some of the plurality of pixels 220 by the global electronic shutter method. is read out. With such a configuration, an imaging signal by the rolling electronic shutter method and an imaging signal by the global electronic shutter method can be generated within one frame without switching between the rolling electronic shutter method and the global electronic shutter method between frames as in the conventional technology. can be obtained. In reading out one frame, an image for one frame can be obtained by the rolling electronic shutter method, and signals for AF and AE can be obtained by the global electronic shutter method.

(3) In the image sensor 101, the readout section 250 of each pixel 220 has an RS readout circuit and a GS readout circuit respectively connected to the photodiode PD. The RS readout circuit reads out the imaging signal by the rolling electronic shutter method, and the GS readout circuit reads out the imaging signal from some pixels by the global electronic shutter method. As a result, in parallel with reading image signals from all pixels by the rolling electronic shutter method, it is possible to read image signals from some pixels by the global electronic shutter method.

(4) In the camera body 100, the body control device 102 performs focus adjustment processing, exposure calculation processing, white balance adjustment processing, subject recognition processing, At least one of moving object prediction processing and subject tracking processing is executed. With such a configuration, the above-described processing can be performed using the imaging signal of the area having the pixel accumulation simultaneity. Also, the body control device 102 determines the pixels from which the imaging signals are read out by the global electronic shutter method in the imaging element 101 based on the result of the above-described processing. With such a configuration, the result of the above-described processing can be fed back to the setting of the area read out by the global electronic shutter method.

(5) In the camera body 100, for pixels read out by both the global electronic shutter method and the rolling electronic shutter method, the body control device 102 combines the imaging signal read out by the global electronic shutter method with the image readout by the rolling electronic shutter method. An image signal is acquired using the output imaging signal. For other pixels, an image signal is acquired using the imaging signal read out by the rolling electronic shutter method. With such a configuration, it is possible to appropriately acquire an image signal for one frame.

(6) In the camera body 100, for pixels read out by both the global electronic shutter method and the rolling electronic shutter method, the body control device 102 combines the imaging signal read out by the global electronic shutter method with the image read out by the rolling electronic shutter method. A moving object to be imaged is detected using the difference from the output imaging signal. With such a configuration, moving object detection can be performed using only one frame, and the time required for moving object detection can be shortened compared to the case where moving object detection is performed using a plurality of frames.

Although various embodiments and modifications have been described above, the present invention is not limited to these contents. Other aspects conceivable within the scope of the technical idea of the present invention are also included in the scope of the present invention.

DESCRIPTION OF SYMBOLS 100... Camera body 101... Imaging element 102... Body control apparatus 110... Interchangeable lens 201... Pixel area 202... Vertical drive circuit 210... Vertical area setting circuit 220... Pixel 250... Read-out part 260... Horizontal area setting circuit, FD, FD1, FD2... floating diffusion, PD... photodiode, RST-Tr, Reset... reset transistor, SC, SG... holding capacitor, TX-Tr, TX1, TX2... transfer transistor

Claims (38)

an imaging device having a pixel area in which a plurality of pixels that generate signals based on photoelectrically converted charges are arranged;
The signal is read from a plurality of first pixels arranged in a first area of the pixel area by a global electronic shutter method, and a rolling electronic shutter is operated from a plurality of second pixels arranged in a second area of the pixel area. a control unit that controls the imaging element to read out the signal in a manner ;
The pixel includes a photoelectric conversion unit that converts light into an electric charge, a first readout circuit that is used when the signal is read out by the control unit using a global electronic shutter method, and a signal that is read by the control unit using a rolling electronic shutter method. a reading unit including a second reading circuit used for reading,
The imaging device , wherein the first pixels are arranged side by side in a column direction in the first area . The imaging device according to claim 1,
the imaging element is connected to the first readout circuit, and a first signal line through which the signal is output;
and a second signal line connected to the second readout circuit and outputting the signal . In the imaging device according to claim 2 ,
The first readout circuit has a first floating diffusion to which charges converted by the photoelectric conversion unit are transferred,
The imaging device, wherein the second readout circuit has a second floating diffusion to which charges converted by the photoelectric conversion unit are transferred. In the imaging device according to claim 3,
The imaging device, wherein the reading unit has a reset transistor that resets the potential of the first floating diffusion. In the imaging device according to claim 4,
The imaging device, wherein the reset transistor resets the potential of the second floating diffusion. In the imaging device according to any one of claims 3 to 5 ,
The first readout circuit has a first amplification transistor including a gate connected to the first floating diffusion,
The imaging device, wherein the second readout circuit has a second amplification transistor including a gate connected to the second floating diffusion. In the imaging device according to claim 6 ,
The first readout circuit has a first select transistor that controls connection between the first amplification transistor and the first signal line,
The imaging device , wherein the second readout circuit has a second select transistor that controls connection between the second amplification transistor and the second signal line . In the imaging device according to any one of claims 1 to 7 ,
The imaging device , wherein the first pixels are arranged side by side in a row direction in the first area. In the imaging device according to any one of claims 1 to 8,
The imaging device, wherein the first area is selected from the pixel area. In the imaging device according to claim 9,
The imaging device, wherein the first area is selected from the pixel areas based on an operation received by an operation member. In the imaging device according to claim 9,
The imaging device, wherein the first area is selected from the pixel area based on a detection result of subject detection. In the imaging device according to any one of claims 9 to 11,
The imaging device, wherein the first area has a plurality of areas among the pixel areas. In the imaging device according to any one of claims 1 to 8 ,
An imaging device comprising a selection unit that selects the first area from the pixel area. The imaging device according to claim 13 , wherein
The imaging device, wherein the selection unit selects a plurality of the first areas from the pixel area. In the imaging device according to claim 13 or 14 ,
The imaging device, wherein the selection unit selects the first area from the pixel areas based on an operation signal from an operation member that receives an operation. In the imaging device according to claim 13 or 14 ,
The imaging device, wherein the selection unit selects the first area from the pixel areas based on a detection result of a subject detection unit that detects a subject. In the imaging device according to any one of claims 1 to 16 ,
A processing execution unit that executes at least one of focus adjustment processing, exposure calculation processing, white balance adjustment processing, subject recognition processing, moving object prediction processing, and subject tracking processing using the signal read from the first pixel . An imaging device comprising: In the imaging device according to any one of claims 1 to 17 ,
An imaging device, comprising: a generator that generates an image based on the signal read from the first pixel and the signal read from the second pixel . In the imaging device according to any one of claims 1 to 18 ,
The imaging device, wherein the control unit controls the number of times the signal is read out from the first pixel to be greater than the number of times the signal is read out from the second pixel in a predetermined period . An imaging device comprising a pixel area in which a plurality of pixels are arranged,
The plurality of pixels includes a photoelectric conversion unit that converts light into electric charges, a first readout circuit for reading out signals based on the electric charges converted by the photoelectric conversion unit by a global electronic shutter method, and a rolling electronic shutter method. a readout unit including a second readout circuit for reading out the signal;
Among the plurality of pixels, a plurality of first pixels arranged in a first area of the pixel area are controlled to read out the signal by a global electronic shutter method;
Among the plurality of pixels, a plurality of second pixels arranged in a second area of the pixel area are controlled to read out the signal by a rolling electronic shutter method,
The first pixels are imaging elements arranged side by side in a column direction in the first area. In the imaging device according to claim 20,
a first signal line through which the signal read by the first readout circuit is output;
and a second signal line through which the signal read by the second readout circuit is output. 22. The imaging device according to claim 21,
The first readout circuit has a first floating diffusion to which charges converted by the photoelectric conversion unit are transferred,
The second readout circuit is an imaging device having a second floating diffusion to which charges converted by the photoelectric conversion unit are transferred. 23. The imaging device according to claim 22,
The read-out unit has an imaging device having a reset transistor for resetting the potential of the first floating diffusion. 24. The imaging device according to claim 23,
The reset transistor is an imaging device that resets the potential of the second floating diffusion. In the imaging device according to any one of claims 22 to 24,
The first readout circuit has a first amplification transistor including a gate connected to the first floating diffusion,
The second readout circuit is an imaging device having a second amplification transistor including a gate connected to the second floating diffusion. In the imaging device according to claim 25,
The first readout circuit has a first select transistor that controls connection between the first amplification transistor and the first signal line,
The second readout circuit is an imaging device having a second select transistor that controls connection between the second amplification transistor and the second signal line. In the imaging device according to any one of claims 20 to 26,
The first pixels are imaging elements arranged side by side in a row direction in the first area. In the imaging device according to any one of claims 20 to 27,
The first area is an imaging element selected from the pixel area. 29. The imaging device according to claim 28,
The first area is an imaging element selected from the pixel areas based on an operation received with an operation member. 29. The imaging device according to claim 28,
The first area is an imaging element selected from the pixel areas based on a detection result of a subject detection unit that detects a subject. In the imaging device according to any one of claims 28 to 30,
The first area is an imaging element having a plurality of areas among the pixel areas. In the imaging device according to any one of claims 20 to 27,
An imaging device comprising a selection unit that selects the first area from the pixel areas. 33. The imaging device according to claim 32,
The selection unit is an imaging element that selects a plurality of the first areas from the pixel area. In the imaging device according to claim 32 or claim 33,
The selection unit is an imaging element that selects the first area from the pixel areas based on an operation signal from an operation member that receives an operation. In the imaging device according to claim 32 or claim 33,
The selection section is an imaging device that selects the first area from the pixel areas based on a detection result of a subject detection section that detects a subject. In the imaging device according to any one of claims 20 to 35,
The signal read from the first pixel is an imaging device used for executing at least one of focus adjustment processing, exposure calculation processing, white balance adjustment processing, subject recognition processing, moving object prediction processing, and subject tracking processing. . In the imaging device according to any one of claims 20 to 36,
The signals read from the first pixels and the signals read from the second pixels are used to generate an image. In the imaging device according to any one of claims 20 to 37,
The imaging device, wherein the number of times the signal is read out from the first pixel is greater than the number of times the signal is read out from the second pixel in a predetermined period.

Images