JP7026782B2 - 窒化ケイ素含有基板をエッチングするための組成物および方法 - Google Patents
窒化ケイ素含有基板をエッチングするための組成物および方法 Download PDFInfo
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- JP7026782B2 JP7026782B2 JP2020512852A JP2020512852A JP7026782B2 JP 7026782 B2 JP7026782 B2 JP 7026782B2 JP 2020512852 A JP2020512852 A JP 2020512852A JP 2020512852 A JP2020512852 A JP 2020512852A JP 7026782 B2 JP7026782 B2 JP 7026782B2
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- silicon nitride
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- C—CHEMISTRY; METALLURGY
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- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Description
Si(R1)(R2)(R3)(R4)
式中、R1、R2、R3、およびR4のそれぞれは、アルキル基、アルコキシ基、ヒドロキシル基、アルキルアミン基、またはアルコキシアミン(アミノアルコキシ)基であり、R1、R2、R3、およびR4の少なくとも1つはアルキル、アルコキシ、またはヒドロキシル基であり、およびR1、R2、R3、およびR4の少なくとも1つは、アルキルアミン基またはアルコキシアミン基である。アルキル鎖を含むR1、R2、R3、またはR4基には、分岐したアルキルが含まれる場合があるが、直鎖基、および1、2、3、4、または5個の炭素原子を有するアルキル基などの低級アルキル基を含む鎖が好ましい場合がある。好ましいR1、R2、R3、およびR4基も非環状、飽和であり、エーテル連結を含まない。
式-(CH2)xNW2[式中、xが1~12の範囲である]または-(CH2)x1-NW-(CH2)x2-NW-...(CH2)xn-NW2[式中、WはHまたはCH3基に等しく、x1、x2、...xnは1~12(好ましくは2または3)の範囲であり、n≦100]を有するアルキルアミン基、
式-O-(CH2)xNW2[式中、xは1~12の範囲である]または-O-(CH2)x1-NW-(CH2)x2-NW-...(CH2)xn-NW2[式中、WはHまたはCH3基に等しく、x1、x2、...xnは1~12(好ましくは2または3)の範囲であり、n≦100]を有するアミノアルコキシ基、
式-O(CH2)yCH3[式中、yは1~6の範囲である]を有するアルコキシ基
ヒドロキシル基(シラノール、-OH)、または
式-(CH2)zCH3[式中、zは1~18の範囲である]を有するアルキル基
である。
1.実施例13と5との比較は、カルボン酸化合物の存在による性能の違いを示す。
2.実施例6および8は、溶液に追加の100ppmのSiO2を充填した場合に200ppmのアルキルアミンを装填することによるプラスの効果を示す。SiO2のこの装填は、エッチング組成物の成分として溶解シリカを添加することにより生じる可能性があり、またはSiN溶解により溶液に酸化物が追加されるため、長時間エッチング方法でエッチング組成物を使用する際に生じる場合がある。
3.実施例7および9は、シリカ装填がなく、アミン添加剤が存在する場合であっても、APTESを省略するマイナスの効果を示す。
4.実施例14は、実施例13と比較して、添加された界面活性剤のプラスの効果を示す。
5.列A、B、Cに記録された結果は、スリットパターンの30分間のエッチング(図1参照)からのものであり、80分間の新鮮な通常の(plain)85%H3PO4ランで実行されたランと比較される(AおよびB)。列Cは、通常のH3PO4を使用した30分間のランを本発明の組成物の30分間のランと比較した場合、SiNエッチング速度(スリットへの浸透の深さで表される)は典型的に約2倍大きいことを示す。(列Cの結果は計算で得られたもので、80分のエッチング深さを2.667で割ったものである。通常のH3PO4の30分間のラン結果は利用できなかった。)
6.列D、E、およびFは、ブランケット膜のエッチング速度およびそれぞれの選択性を示す。
7.列Aの「閉鎖」という用語を含む結果は、30分間のランでスリット開口部が閉じた配合物(列Bの「酸化物ギャップ」)の結果である。同じ実施例では、ブランケット膜でのマイナスの酸化物エッチング速度が示され、選択性(F)は適用不可である。これらのデータ(列Aの「閉鎖」結果)は、極端な性能要件に関連していると見なすことができ、関連する実施例の配合物(6、9、13、および15)は、他の基板、より小さなアスペクト比のパターンのエッチングに、または別のエッチング条件または撹拌の改善などの方法工程を使用する場合に、有効である可能性がある。
Claims (13)
- 酸化ケイ素に対してSiNをエッチングする選択性を有する、窒化ケイ素(SiN)及び酸化ケイ素を含む表面を有する基板のエッチングに使用するための組成物であって、
組成物の総重量の、少なくとも60重量%の濃リン酸、
ヘキサフルオロケイ酸(HFSA)、及び
アミノアルコキシシラン
を含む、組成物。 - 5~50,000パーツパーミリオン(ppm)のヘキサフルオロケイ酸(HFSA)、及び
20~10,000ppmのアミノアルコキシシラン
を含む、請求項1に記載の組成物。 - アミノアルコキシシランが式
Si(R1)(R2)(R3)(R4)
(式中、R1、R2、R3及びR4のそれぞれは、アルキル基、アルキルアミン基、アルコキシ又はヒドロキシル基であり、R1、R2、R3及びR4の少なくとも1つはアルコキシ又はヒドロキシル基であり、R1、R2、R3及びR4の少なくとも1つは、アルキルアミン基である)
を有する、請求項1に記載の組成物。 - R1、R2、R3及びR4のそれぞれが、
式:
-(CH2)xNW2(式中、xは1~12の範囲である)、又は
-(CH2)x1-NW-(CH2)x2-NW-...(CH2)xn-NW2(式中、WはHまたはCH3基に等しく、x1、x2、...xnは1~12の範囲であり、n≦100である)
を有するアルキルアミン基、
式-O(CH2)yCH3を有するアルコキシ基(式中、yは1~6の範囲である)
ヒドロキシル基、又は
式-(CH2)zCH3(式中、zは1~18の範囲である)を有するアルキル基
である、請求項3に記載の組成物。 - カルボン酸化合物をさらに含む、請求項1に記載の組成物。
- 組成物の総重量に基づいて0.01~10重量%のカルボン酸化合物を含む、請求項5に記載の組成物。
- アルキルアミン化合物をさらに含む、請求項1に記載の組成物。
- 5~10,000ppmのアルキルアミン化合物を含む、請求項7に記載の組成物。
- 溶解シリカまたは可溶性ケイ素含有化合物をさらに含む、請求項1に記載の組成物。
- 組成物の総重量に基づいて約5~10,000パーツパーミリオンの溶解シリカ又は可溶性ケイ素含有化合物を含む、請求項9に記載の組成物。
- さらに有機溶媒を含む、請求項1に記載の組成物。
- 界面活性剤をさらに含む、請求項1に記載の組成物。
- 酸化ケイ素に対するSiNのエッチングの選択性を有する、窒化ケイ素(SiN)及び酸化ケイ素を含む表面を有する基板をエッチングする方法であって、
エッチング組成物の総重量の、少なくとも60重量%の濃リン酸、
ヘキサフルオロケイ酸(HSFA)、及び
アミノアルコキシシラン
を含むエッチング組成物を提供すること、
窒化ケイ素及び酸化ケイ素を含む表面を有する基板を提供すること、並びに
表面からSiNを除去する条件で基板を組成物と接触させること
を含む、方法。
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