JP7019529B2 - 試料搬送部材 - Google Patents
試料搬送部材 Download PDFInfo
- Publication number
- JP7019529B2 JP7019529B2 JP2018142597A JP2018142597A JP7019529B2 JP 7019529 B2 JP7019529 B2 JP 7019529B2 JP 2018142597 A JP2018142597 A JP 2018142597A JP 2018142597 A JP2018142597 A JP 2018142597A JP 7019529 B2 JP7019529 B2 JP 7019529B2
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- JP
- Japan
- Prior art keywords
- substrate
- conductive layer
- recess
- dlc film
- protrusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 42
- 239000000919 ceramic Substances 0.000 claims description 18
- 239000002245 particle Substances 0.000 description 19
- 230000005611 electricity Effects 0.000 description 15
- 230000003068 static effect Effects 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000011224 oxide ceramic Substances 0.000 description 5
- 229910052574 oxide ceramic Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Manipulator (AREA)
Description
前記突起部の少なくとも頂部が導電性を有するDLC膜に覆われている。そして、DLC膜は、前記導電層に電気的に接続されている。
アルミニウム(Al2O3)に換算した含有量が70質量%以上であれば、基体1および突起部3は酸化アルミニウム質セラミックスで構成されている。
リーンシートの導電層2を形成する箇所に、導電性ペーストの印刷を行なう。このとき、導電性ペーストにセラミック粒子を添加すれば、導電層2がセラミック粒子を含有するものとなる。
2:導電層
3、3a、3b:突起部
4、4a、4b:頂部
5:DLC膜
6:凹部
10、10a、10b:試料搬送部材
Claims (5)
- 基体と、
該基体の内部に位置し、前記基体外の接地部に繋がる導電層と、を備え、
前記基体は複数の突起部を有し、
前記基体および前記突起部は、セラミックスからなり、
複数の前記突起部のうち少なくともいずれかにおいて、前記突起部の少なくとも頂部が導電性を有するDLC膜に覆われており、
該DLC膜は、前記導電層に電気的に接続されており、
前記基体は、前記突起部の隣に凹部を有し、
前記導電層の一部は、前記凹部内に位置しており、
前記DLC膜は、前記頂部から前記凹部内の前記導電層までの前記突起部および前記基体の表面上に位置している、試料搬送部材。 - 前記DLC膜は、前記突起部を全て覆っている、請求項1に記載の試料搬送部材。
- 前記DLC膜は、前記凹部内に位置する前記導電層を全て覆っている請求項1または2に記載の試料搬送部材。
- 前記凹部の深さAに対する前記凹部の開口部の短径Bの比B/Aが1より大きい請求項1~3のいずれか一つに記載の試料搬送部材。
- 前記DLC膜は、前記凹部から最も遠い前記突起部の頂部から前記凹部内の前記導電層までの長さが100mm以下である請求項1~4のいずれか一つに記載の試料搬送部材。
Priority Applications (1)
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JP2018142597A JP7019529B2 (ja) | 2018-07-30 | 2018-07-30 | 試料搬送部材 |
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JP2018142597A JP7019529B2 (ja) | 2018-07-30 | 2018-07-30 | 試料搬送部材 |
Publications (2)
Publication Number | Publication Date |
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JP2020021772A JP2020021772A (ja) | 2020-02-06 |
JP7019529B2 true JP7019529B2 (ja) | 2022-02-15 |
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JP2018142597A Active JP7019529B2 (ja) | 2018-07-30 | 2018-07-30 | 試料搬送部材 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101247A (ja) | 2003-09-25 | 2005-04-14 | Taiheiyo Cement Corp | Dlc膜およびこれを備えた真空チャック |
JP2006086389A (ja) | 2004-09-17 | 2006-03-30 | Taiheiyo Cement Corp | 真空吸着用治具 |
US20150078874A1 (en) | 2013-09-16 | 2015-03-19 | Applied Materials, Inc. | Compliant robot blade for defect reduction |
WO2015076369A1 (ja) | 2013-11-22 | 2015-05-28 | 京セラ株式会社 | 静電チャック |
WO2017188377A1 (ja) | 2016-04-27 | 2017-11-02 | 京セラ株式会社 | 試料搬送部材 |
-
2018
- 2018-07-30 JP JP2018142597A patent/JP7019529B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101247A (ja) | 2003-09-25 | 2005-04-14 | Taiheiyo Cement Corp | Dlc膜およびこれを備えた真空チャック |
JP2006086389A (ja) | 2004-09-17 | 2006-03-30 | Taiheiyo Cement Corp | 真空吸着用治具 |
US20150078874A1 (en) | 2013-09-16 | 2015-03-19 | Applied Materials, Inc. | Compliant robot blade for defect reduction |
WO2015076369A1 (ja) | 2013-11-22 | 2015-05-28 | 京セラ株式会社 | 静電チャック |
WO2017188377A1 (ja) | 2016-04-27 | 2017-11-02 | 京セラ株式会社 | 試料搬送部材 |
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JP2020021772A (ja) | 2020-02-06 |
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