JP7077452B2 - Display device - Google Patents

Description

The present invention relates to a product, a method, or a manufacturing method. Alternatively, the invention relates to a process, machine, manufacture, or composition (composition of matter). In particular, one aspect of the present invention relates to a semiconductor device, a light emitting device, a display device, an electronic device, a lighting device, a driving method thereof, or a method for manufacturing the same. In particular, the present invention relates to a display device (display panel) capable of displaying on a curved surface. Alternatively, an electronic device having a display device capable of displaying on a curved surface, a light emitting device,
Regarding lighting equipment or how to make them.

In the present specification and the like, the semiconductor device refers to all devices that can function by utilizing the semiconductor characteristics. Transistors, semiconductor circuits, arithmetic units, storage devices and the like are one aspect of semiconductor devices. Further, the photographing device, the display device, the electronic device, the lighting device, and the electronic device may have a semiconductor device.

In recent years, electronic devices such as smartphones and tablet terminals have become widespread, and opportunities to use information communication outdoors are increasing. Further, in the field of display devices provided in electronic devices, the development of low power consumption technology capable of long-term operation with a battery having a limited capacity is being competed. For example, Patent Document 1 discloses a low power consumption liquid crystal display device that holds an image signal for a long time by using a transistor having an oxide semiconductor and having a low off-current as a pixel.

Further, as a display device included in an electronic device, a display device in which a reflective liquid crystal display device and a transmissive liquid crystal display device are combined has been proposed. For example, as a liquid crystal display device that makes use of the advantages of a reflective liquid crystal display device and enables use in an environment where ambient illumination light is weak, a part of the incident light is transmitted and the remaining incident light is reflected. A liquid crystal display device using a so-called semi-transmissive reflective film has been proposed in Patent Document 2.

Japanese Unexamined Patent Publication No. 2011-141522 Japanese Patent Application Laid-Open No. 2002-372710

As a display device included in an electronic device, a transmissive liquid crystal element using a backlight as a light source, a self-luminous organic EL element, and the like are often used. Although these display elements have good visibility indoors, the light (display) emitted from the inside of the display device is visible because the external light reflection on the display surface is strong under strong light such as outdoors in fine weather. The sex is reduced.

Therefore, it is preferable to use a reflection type display element that utilizes the reflection of external light under strong light.
For example, in a display device using a reflective liquid crystal element, the stronger the external light intensity, the better the visibility.
However, since a glass substrate or a resin substrate having a reflectance of several percent is used for the display surface of the display device, the influence of external light reflection on the display has not been solved.

Further, in the conventional liquid crystal display device using a semi-transmissive reflective film, since the reflective liquid crystal display element and the transmissive liquid crystal display element are controlled by one transistor, the reflective liquid crystal display element and the reflective liquid crystal display element can be used. There is a problem that the transmissive liquid crystal display element and the transmissive liquid crystal display element cannot be controlled independently. In addition, there is a problem that the light of the backlight cannot be used efficiently.

Therefore, one of the objects of the present invention is to provide a display device having good visibility even under strong light. Another object of the present invention is to provide a display element having a function of transmitting visible light and a display device having a display having a function of reflecting visible light. Alternatively, one of the purposes is to provide a display system with low power consumption. Alternatively, one of the purposes is to provide a new display device. Alternatively, one of the purposes is to provide a new electronic device.

The description of these issues does not preclude the existence of other issues. It is not necessary to solve all of these problems in one aspect of the present invention. In addition, problems other than the above are naturally clarified from the description of the specification and the like, and it is possible to extract problems other than the above from the description of the specification and the like.

One aspect of the present invention relates to a display device having a function of emitting visible light, a display device having a function of reflecting visible light, and a display device using a display device having a function of emitting visible light and a function of reflecting visible light. .. It also relates to an electronic device having the display device.

One aspect of the present invention is a display device including a first substrate, a second substrate, a first display element, a second display element, an input device, and a drive circuit. The first substrate and the second substrate have an overlapping region, and the first display element and the second display element have a first surface of the first substrate and a first surface of the second substrate. The first display element has a function of reflecting visible light, and the second display element has a function of transmitting visible light, and is provided between the first display elements and the first surface of the second substrate. , 1st
An input device is provided between the display element and the second display element, and an antireflection layer is provided on the second surface facing the first surface of the second substrate. A drive circuit is provided on the first surface of the substrate, and the input device and the drive circuit are display devices that are electrically connected via flexible wiring.

The first display element and the second display element can be provided in the same pixel unit.

The drive circuit can have a function of driving a first display element, a second display element, and an input device.

The antireflection layer may also be provided on the second surface of the second substrate.

The antireflection layer can be formed of a dielectric layer. Alternatively, the antireflection layer may be formed by an antiglare pattern.

The input device has a wiring having a first layer provided on the first surface of the second substrate and a second layer provided in contact with the first layer, the first. The layer is preferably formed of a material having a lower visible light reflectance than the second layer.

It is preferable that a light diffusing plate and a polarizing plate are provided between the first display element and the second display element and the input device.

It is preferable that the first display element and the second display element are each electrically connected to a transistor containing a metal oxide in the semiconductor layer on which the channel is formed.

In the present specification, the display device (display unit) is connected to a connector, for example, FPC (Flex).
Ible printed circuit board) or TCP (Tape Carrie)
COG (Chip On Gla) on a module on which rPackage) is attached, a module on which a printed wiring board is provided at the end of TCP, or a substrate on which a display element is formed.
A module in which an IC (integrated circuit) is directly mounted by the ss) method may include a display device.

By using one aspect of the present invention, it is possible to provide a display device having good visibility even under strong light. Alternatively, it is possible to provide a display element having a function of emitting visible light and a display device having a display having a function of reflecting visible light. Alternatively, a low power consumption display system can be provided. Alternatively, a new display device can be provided. Alternatively, new electronic devices can be provided.

The description of these effects does not preclude the existence of other effects. It should be noted that one aspect of the present invention does not necessarily have to have all of these effects. It should be noted that the effects other than these are self-evident from the description of the description, drawings, claims, etc., and it is possible to extract the effects other than these from the description of the description, drawings, claims, etc. Is.

The figure explaining the display device. The figure explaining the antireflection layer. The figure explaining the display device. The figure explaining the connection example of a drive circuit and FPC. The figure explaining the idling stop drive. The figure explaining the pixel unit. The figure explaining the pixel unit. The figure explaining the pixel unit. The figure explaining the circuit of the display device and the top view of a pixel. The figure explaining the circuit of a display device. The figure explaining the circuit of a display device. The figure explaining the structure of the display device. The figure explaining the structure of a touch sensor. The figure explaining the structure of a touch sensor. The figure explaining the structure of the display device. The figure explaining the structure of the display device. The figure explaining the structure of the display device. Conceptual diagram of the composition of metal oxides. The figure explaining the measurement result of the XRD spectrum of a sample. The figure explaining the TEM image of the sample, and the electron beam diffraction pattern. The figure explaining the EDX mapping of a sample. The figure explaining the transistor. The figure explaining the transistor. The figure explaining the transistor. The figure explaining the structure of a display module. The figure explaining the electronic device. The figure explaining the electronic device. The figure explaining the gradation change after black-and-white display of the display device which has a liquid crystal layer. The graph which shows the relationship between the specific resistance of a liquid crystal layer and the dipole moment of a molecule of a liquid crystal layer.

The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details thereof can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments shown below.

In the configuration of the invention described below, the same reference numerals are commonly used among different drawings for the same parts or parts having similar functions, and the repeated description thereof will be omitted. Further, when referring to the same function, the hatch pattern may be the same and no particular reference numeral may be added.

It should be noted that in each of the figures described herein, the size, layer thickness, or region of each configuration may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

The ordinal numbers such as "first" and "second" in the present specification and the like are added to avoid confusion of the components, and are not limited numerically.

(Embodiment 1)
In the present embodiment, the display device of one aspect of the present invention will be described with reference to the drawings.

The display device of one aspect of the present invention includes a first substrate, a second substrate, a first display element, a second display element, an input device, and a drive circuit.

The first display element has a function of reflecting visible light, and the second display element has a function of transmitting visible light. Therefore, it is possible to perform a display with low power consumption and good visibility, such as operating the first display element under strong light and operating the second display element under low light.

The first display element, the second display element, and the input device are provided between the first substrate and the second substrate. An input device is provided on the first surface of the second substrate, and an antireflection layer is provided on the second surface facing the first surface. Therefore, the reflection of external light on the display surface can be sufficiently suppressed under strong light, and the visibility can be further improved.

FIG. 1A is a diagram illustrating a display device according to an aspect of the present invention. The display device 10 shown in FIG. 1A includes a first substrate 11, a second substrate 12, a layer 20, a drive circuit 30, and an FPC 3.
It has 1 and FPC32.

For the first substrate 11 and the second substrate 12, for example, a glass substrate can be used. Alternatively, it may be a flexible resin substrate. Since the display device 10 uses a second display element that transmits visible light, a translucent material is used on the first substrate 11 and the second substrate 12 side.

Further, the antireflection layer 13 is provided on both the first surface and the second surface or the second surface of the second substrate 12. The antireflection layer 13 may have the configuration shown in FIGS. 2A to 2F, for example.

FIG. 2A is an example in which a light-transmitting dielectric layer 13a is provided on the second surface of the second substrate 12, which is the upper surface of the display device 10. By providing a multilayer dielectric layer having an appropriate thickness as the dielectric layer 13a, it is possible to suppress reflected light due to the interference effect of light. The reflectance of one side of the glass substrate is about 4 to 5%, but it is up to about 0.05 to 0.5% by providing the dielectric layer 13a having translucency on the second surface of the second substrate 12. The reflectance can be suppressed.

Further, as shown in FIG. 2B, the dielectric layer 1 having translucency also on the first surface of the second substrate 12.
By providing 3b, the reflectance on the back surface side of the glass substrate can be suppressed. In this case, the reflectance can be suppressed to about 0.1 to 1.0% on the front and back of the second substrate 12. Therefore, it is possible to suppress the reflection of external light and improve the visibility of the display.

Alternatively, as shown in FIG. 2C, the anti-glare pattern 13c formed by fine protrusions
May be provided on the second surface of the second substrate 12. The reflected light can be scattered by the anti-glare pattern 13c, and the display by the reflection display element can be easily seen. again,
It is possible to prevent fingerprints and other stains from sticking. In addition, in FIG. 2C, the second substrate 12
An example of processing the second surface of the above to provide an anti-glare pattern 13c is shown in FIG. 2 (D).
As shown in the above, the film 13d on which the anti-glare pattern is formed may be attached to the second surface of the second substrate 12.

Further, as shown in FIG. 2E, the antiglare pattern 13c and the dielectric layer 13b may be combined. Further, as shown in FIG. 2F, the film 13d on which the antiglare pattern is formed and the dielectric layer 13b may be combined.

A layer 20 is provided between the first substrate 11 and the second substrate 12. The layer 20 will be described with reference to FIG. 1 (B). FIG. 1B corresponds to the cross section of the X1-X2 position shown in FIG. 1, and is shown by enlarging the thickness direction for clarification. The layer 20 includes an element layer 21, a substrate 22, a light diffusing plate 23, a polarizing plate 24b, an input device 25, and an adhesive layer 26.

The element layer 21 has a FET layer 21a, an LC1 layer 21b, and an LC2 layer 21c. FET
The layer 21a has a transistor or the like that constitutes a pixel circuit. The LC1 layer 21b has a first display element. The LC2 layer 21c has a second display element. The first display element and the second display element are electrically connected to the transistor included in the FET layer 21a.

As the first display element, for example, a reflective liquid crystal element can be used. Further, as the second display element, for example, a transmissive liquid crystal element can be used. The reflective liquid crystal element has low power consumption and can display with high visibility even in the sunlight in fine weather. The transmissive liquid crystal element can display with high visibility under indoor light or outdoors in cloudy weather.

The substrate 22 has a function of sealing the liquid crystal layer of the first display element. As the substrate 22, a resin substrate such as a film can be used in addition to a glass substrate or the like.

The light diffusing plate 23 has a function of diffusing the light reflected by the reflecting electrode of the liquid crystal element. With this function, even a reflective liquid crystal element can develop a natural color. In addition, it is possible to display white that is close to blank paper.

As the polarizing plate 24b, for example, a circular polarizing plate can be used. By utilizing the change in the deflection angle due to the circular polarizing plate and the liquid crystal display, the display using the reflected light can be performed.

Further, a polarizing plate 24a is provided on the second surface facing the first surface of the first substrate 11. As the polarizing plate 24a, for example, a circular polarizing plate can be used. By utilizing the change in the deflection angle due to the liquid crystal of the polarizing plates 24a and 24b and the LC2 layer, it is possible to perform display using transmitted light.

As the input device 25, for example, a capacitance type touch sensor can be used. The input device 25 is provided so as to overlap with the display unit, and has a function of converting an operation of the user touching the display unit into an electric signal and outputting the input device 25.

The input device 25 is provided on the first surface of the second substrate 12 as shown in FIG. Alternatively, it may be provided on the dielectric layer 13b described above. As the capacitance type touch sensor, a translucent conductive film can be used as wiring and electrodes, but it is preferable to use a metal mesh having lower resistance and applicable to a large display device. In general, metal is a material having a high reflectance, but it can be darkened by subjecting it to an oxidation treatment or the like. Therefore, even when the second substrate 12 is provided on the first surface, the reflection of external light can be suppressed.

The input device 25 is an external type, and the first is via an adhesive layer 26 having transparency to visible light.
The configuration is such that it overlaps with the display element of No. 1 and the second display element. The input device 25 is a transistor.
Since the first display element and the second display element can be manufactured in a separate process from the manufacturing process, the yield of each element can be improved.

The drive circuit 30 may have a function as a source driver for supplying image data to the first display element and the second display element, and may also have a function of controlling the input device 25. The drive circuit 30 can be provided by mounting an IC chip formed by using, for example, a silicon wafer. Alternatively, the drive circuit 30 may be formed by a transistor provided on the first substrate 11.

Although FIGS. 1 (A), 1 (B) and 3 show a mode in which a bare chip is mounted by COG as the drive circuit 30, TCP or COF (Chip on Film) may be used to provide the drive circuit 30. ..

The drive circuit 30 is electrically connected to a circuit or the like that supplies image data via the FPC 31.
Further, the input device 25 is electrically connected to the drive circuit 30 via the FPC 32. FPC3
Reference numerals 1 and 32 are flexible substrates on which wiring is formed, and can be formed by, for example, laminating a polyimide film and copper wiring or the like.

4 (A) to 4 (D) are diagrams illustrating the electrical connection of the drive circuit 30, FPC 31 and FPC 32.

FIG. 4A is an example in which the drive circuit 30 has a function as a source driver for supplying image data to the first display element and the second display element and a function for controlling the input device 25. At this time, the drive circuit 30 can be electrically connected to the FPC 31 via the wiring 33a. Further, the drive circuit 30 can be electrically connected to the FPC 32 via the wiring 33b.

FIG. 4B is an example when the drive circuit 30 is divided into two. Here, the drive circuit 30
The a has a function as a source driver for supplying image data to the first display element and the second display element. Further, the drive circuit 30b has a function of controlling the input device 25. At this time, the drive circuit 30a can be electrically connected to the FPC 31 via the wiring 33a. Further, the drive circuit 30b can be electrically connected to the FPC 32 via the wiring 33b.

As shown in FIG. 4C, the drive circuit 30a and the drive circuit 30b may be electrically connected via the wiring 33c. Further, as shown in FIG. 4D, the FPC 31 and the FPC 32 may be electrically connected via the wiring 33d. With such a configuration, it is possible to reduce the wiring for supplying the power supply voltage and the signal.

As the transistor provided in the FET layer 21a, it is preferable to use a transistor having a metal oxide in the channel region (hereinafter, OS transistor). The OS transistor has an extremely small off current, and can hold the potential written as image data for a long time. Therefore, it is possible to perform so-called idling stop drive in which the image display can be maintained without newly writing the image data in a plurality of frame periods.

In the idling stop drive, the image data written in the pixels can be held for two or more frames. As a result, the frequency of rewriting the image data can be reduced, so that the power consumption can be reduced.

Since the reflective liquid crystal element that can be used as the first display element does not require a backlight, the power consumption of the pixel portion is equal to the power consumption of the circuit operation. Therefore, it is particularly preferable to drive the pixel having the first display element to idling stop, and the power consumption of the pixel portion can be reduced in proportion to the rewriting frequency.

An example of the above-mentioned idling stop drive will be described with reference to FIGS. 5A to 5C.

FIG. 5A illustrates a circuit diagram of a pixel composed of a liquid crystal element 35 and a pixel circuit 36. FIG. 5A illustrates a transistor M1 connected to a signal line SL and a gate line GL, a capacitive element Cs _LC , and a liquid crystal element LC.

FIG. 5B shows the signal line SL in a normal drive mode that is not an idling stop drive.
It is a timing chart which shows the waveform of the signal given to the gate line GL, respectively. In the normal drive mode, it can be operated at a normal frame frequency (for example, 60 Hz).

When each period of continuous frames at the frame frequency is T ₁ , T ₂ , and T ₃ .
_A scanning signal is given to the gate line in each frame period, and the operation of writing the data D1 of the signal line to the pixel is performed. This operation is the same whether the same data D ₁ is written by T ₁ , T ₂ , or T ₃ or different data is written.

FIG. 5C is a timing chart showing waveforms of signals given to the signal line SL and the gate line GL in the idling stop drive. In the idling stop drive, it can be operated at a low frame frequency (for example, 1 Hz).

In FIG. 5C, the frame period at the frame frequency is represented by T ₁ , the period in which data is written is represented by _{TW, and the period in which data is retained is represented by T RET .} In the idling stop drive, _a scanning signal is given to the gate line in the period _TW , the data D1 of the signal line is written to the pixel, the gate line is fixed to the low level voltage in the period T _RET , and the transistor M1 is in a non-conducting state. The operation of holding the once written data D ₁ in the pixel is performed.

Here, by using an OS transistor as the transistor M1, it is possible to hold the data D ₁ for a long time due to its low off current. Further, although FIGS. 5A to 5C show an example in which the liquid crystal element LC is used, the idling stop drive can be similarly performed by using a light emitting element such as an organic EL element.

In the circuit diagram shown in FIG. 5A, the liquid crystal element LC serves as _a leak path for the data D1. Therefore, in order to properly drive the idling stop, the specific resistance of the liquid crystal element LC is set to 1.
.. It is preferably 0 × 10 ¹⁴ Ω · cm or more.

Here, the anisotropy of the dielectric constant of the liquid crystal layer will be described with reference to FIG. 28.

First, the seizure of the display device when two materials having different anisotropy of the dielectric constant are used as the material used for the liquid crystal layer will be described.

The first display device is a liquid crystal material (Mat) having a dielectric constant anisotropy of 3.85 in the liquid crystal layer.
Using erial 1), as the second display device, the anisotropy of the dielectric constant in the liquid crystal layer is 2.2.
A liquid crystal material (Material 2) is used.

As an evaluation method for burn-in of the display device, halftones are continuously displayed (Half To).
Halftone display (White → Halftone) after white display for the gradation when ne → Half Tone)
Halftone) and the halftone display after black display (Black → Halftone) with respect to the gradation when the halftone is continuously displayed are measured. FIG. 28 shows the result of the gradation change after the black and white display. In FIG. 28, the vertical axis represents the change in the halftone (gray level), and the horizontal axis represents the time from the writing of the halftone.

From the results shown in FIG. 28, the liquid crystal material (Material) having a dielectric constant anisotropy of 3.85.
In 1), White → Half Tone and Black → Half Tone, 7
.. It can be seen that there is a deviation of two gradations. On the other hand, a liquid crystal material having a dielectric anisotropy of 2.2 (
In Material 2), White → Half Tone and Black → Half
It can be seen that there is a 1.4 gradation shift with Tone. In addition, in FIG. 28, the continuous halftone of the liquid crystal material (Material 2) having the anisotropy of the dielectric constant of 2.2 is displayed (H).
The data when alf Tone → Half Tone) is displayed in halftone after white display (W).
It is displayed so as to almost overlap with the data of hite → Halftone).

From the results shown in FIG. 28, it can be seen that the deviation of the gradation can be suppressed by using a material having a low dielectric anisotropy for the liquid crystal layer.

The allowable range of the gradation value deviation in the same still image means, for example, a deviation of 0 gradation or more and 3 gradations or less when the image is displayed by controlling the transmittance in 256 steps. If the deviation of the gradation value in the same still image is 0 gradation or more and 3 gradations or less, it becomes difficult for the viewer to perceive flicker. Further, as another example, when displaying an image by controlling the transmittance in 1024 steps, it means a deviation of 0 gradation or more and 12 gradations or less. That is, the allowable range of the gradation value deviation in the same still image is preferably 1% or more and 1.2% or less of the maximum number of gradations to be displayed.

Next, the dipole moment of the liquid crystal layer will be described with reference to FIG. 29.

The graph shown in FIG. 29 shows the relationship between the dipole moment of a molecule and the specific resistance as an example of a liquid crystal layer having a molecule having a dipole moment of 0 debye or more and 3 debye or less.

The vertical axis of the graph shown in FIG. 29 is the dipole moment of the molecule.
Is shown. In measuring the value shown in FIG. 29, the liquid crystal layer is formed by mixing the parent liquid crystal and the additive material added thereto. The dipole moment is the dipole moment of the molecule of the additive material. The horizontal axis shown in FIG. 29 is the specific resistance of the mixture of the liquid crystal layer, that is, the parent liquid crystal and the additive material (
It indicates resistivity). The mixing ratio of the parent liquid crystal display and the additive material is such that the additive material is 20% by weight with respect to the entire mixed material. Hereinafter, the mixture of the parent liquid crystal display and the additive material is referred to as "mixed liquid crystal display". Each point in FIG. 29 changes the type of the additive material to be added to the parent liquid crystal display, and shows the relationship between the dipole moment of the molecule of the additive material and the specific resistance of each mixed liquid crystal to which the additive material is added for each type of the additive material. It is a thing.

In FIG. 29, the specific resistance value of the mixed liquid crystal display increases as the value of the dipole moment of the molecule of the additive material decreases. In other words, if the dipole moment of the added material is large, the resistivity decreases.

From FIG. 29, the mixed liquid crystal display in which the dipole moment of the molecule of the added material is 3 debye or less has a specific resistance value of 1.0 × 10 ¹⁴ Ω · cm or more. If the dipole moment of the molecule of the additive material is small, the resistivity value becomes large. For example, when the molecular structure is symmetric with respect to the center of the molecule, the dipole moment becomes 0 because the charge distribution is not biased. Therefore, as a display device of one aspect of the present invention, the permanent dipole moment of the molecule of the additive material is preferably 0 debye or more and 3 debye or less, and the specific resistance is 1.0 × 10 ¹⁴ Ω · cm or more. It can be said that it is preferable.

Examples of the metal oxide used for the above-mentioned transistor include CAC-OS (C) described later.
loud-AlignedComposite-Oxide Semiconduct
or) and the like can be used.

In particular, it is preferable to apply an oxide semiconductor having a bandgap larger than that of silicon. When a semiconductor material with a wider bandgap and a lower carrier density than silicon is used,
The current in the off state of the transistor can be reduced.

In addition, the low off-current makes it possible to retain the charge accumulated in the capacitance via the transistor for a long period of time. By applying such a transistor to a pixel, it is possible to stop the drive circuit while maintaining the gradation of the image displayed in each display area. As a result, it is possible to realize an electronic device with extremely reduced power consumption.

Further, a polycrystalline semiconductor may be used for the semiconductor device such as the above-mentioned pixel and the transistor used in the circuit for driving the pixel. For example, it is preferable to use polycrystalline silicon or the like. Polycrystalline silicon can be formed at a lower temperature than single crystal silicon, and has higher field effect mobility and higher reliability than amorphous silicon. By applying such a polycrystalline semiconductor to a pixel, the aperture ratio of the pixel can be improved. Further, even when the number of pixels is extremely large, the gate drive circuit and the source drive circuit can be formed on the same substrate as the pixels, and the number of components constituting the electronic device can be reduced.

By using the above configuration, it is possible to provide a display device capable of displaying with high visibility regardless of the environment of the intensity of external light. In particular, the display device has good visibility even under strong light.
It has the advantage of being able to operate with low power consumption.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

(Embodiment 2)
In the present embodiment, a display device according to one aspect of the present invention and a method for driving the display device will be described.
The display device of one aspect of the present invention can have a pixel provided with a first display element that reflects visible light and a pixel provided with a second display element that emits visible light.

The display device has a function of displaying an image by one or both of the first light reflected by the first display element and the second light transmitted by the second display element. Alternatively, the display device has a function of expressing gradation by controlling the amount of first light reflected by the first display element and the amount of second light emitted by the second display element, respectively. Have.

Further, the display device determines the gradation by controlling the light amount of the transmitted light of the first pixel and the second display element, which express the gradation by controlling the amount of reflected light of the first display element. Second to express
It is preferable to have a configuration having the pixels of. A plurality of the first pixel and the second pixel are arranged in a matrix, for example, to form a display unit.

Further, it is preferable that the first pixel and the second pixel are arranged in the display area with the same number and the same pitch. At this time, the adjacent first pixel and second pixel can be collectively called a pixel unit. As a result, as will be described later, both the image displayed only by the plurality of first pixels, the image displayed only by the plurality of second pixels, and the plurality of first pixels and the plurality of second pixels. Each of the images displayed in can be displayed in the same display area.

As the first display element included in the first pixel, an element that reflects and displays external light can be used. Since such an element does not have a light source, it is possible to extremely reduce the power consumption at the time of display.

As the first display element, a reflective liquid crystal element can be typically used. Or the first
As a display element of the shutter type MEMS (Micro Electro Mech)
In addition to the organic system element and the optical interference type MEMS element, an element to which a microcapsule method, an electrophoresis method, an electrowetting method, an electron powder fluid (registered trademark) method, or the like is applied can be used.

As the second display element included in the second pixel, an element that displays by transmitting light from a light source can be used. As the display element included in the second pixel, a transmissive liquid crystal element that controls the amount of transmitted light can be used. As the light source, for example, a backlight can be used.

The first pixel is, for example, a sub-pixel exhibiting white (W), or, for example, red (R) or green (G).
It can be configured to have sub-pixels that each exhibit light of three colors of blue (B). Similarly, the second pixel is also configured to have a sub-pixel exhibiting, for example, white (W), or a sub-pixel exhibiting light of three colors, for example, red (R), green (G), and blue (B). can do. The sub-pixels of the first pixel and the second pixel may have four or more colors. The more types of sub-pixels, the more power consumption can be reduced and the color reproducibility can be improved.

One aspect of the present invention is a first mode in which an image is displayed in the first pixel, a second mode in which the image is displayed in the second pixel, and an image is displayed in the first pixel and the second pixel. The third mode can be switched.

The first mode is a mode for displaying an image using the light reflected by the first display element. The first mode is a drive mode with extremely low power consumption because no light source is required. For example, it is effective when the illuminance of the external light is sufficiently high and the external light is white light or light in the vicinity thereof. The first mode is a display mode suitable for displaying character information such as books and documents. In addition, since the reflected light is used, the display can be made gentle on the eyes, and the effect that the eyes are not tired is achieved. Since the first mode is displayed using the reflected light, it may be referred to as a reflection type display mode.

The second mode is a mode for displaying an image by using the transmitted light from the second display element.
Therefore, extremely vivid (high contrast and high color reproducibility) display can be performed regardless of the illuminance and chromaticity of external light. For example, it is effective when the illuminance of outside light is extremely low, such as at night or in a dark room. In addition, when the outside light is dark, the user may feel dazzling when the display is bright. In order to prevent this, it is preferable to display with reduced brightness in the second mode. As a result, in addition to suppressing glare, power consumption can also be reduced. The second mode is a mode suitable for displaying a vivid image, a smooth moving image, or the like. Since the second mode is displayed using the transmitted light, it may be referred to as a transmission type display mode (Transmission mode).

The third mode is a mode in which display is performed using both the reflected light by the first display element and the transmitted light by the second display element. Specifically, it is driven to express one color by mixing the light exhibited by the first pixel and the light exhibited by the second pixel adjacent to the first pixel. It is possible to reduce the power consumption as compared with the second mode while displaying more vividly than the first mode. For example, it is effective when the illuminance of the outside light is relatively low such as under indoor lighting or in the morning or evening time, or when the chromaticity of the outside light is not white.

In addition, in this specification etc., the display which combined the 1st display element and the 2nd display element,
That is, the third mode can be referred to as a hybrid display mode (HB display mode). Alternatively, the third mode may be referred to as a display mode (TR-Hybrid mode) in which a transmissive display mode and a reflective display mode are combined. Further, a display capable of hybrid display can be referred to as a hybrid display.

Here, the definitions of the hybrid display and the hybrid display will be described.

The hybrid display method is a method of displaying a plurality of lights in the same pixel or the same sub-pixel to display characters or / and an image. Further, the hybrid display is an aggregate that displays a plurality of lights in the same pixel or the same sub-pixel included in the display unit and displays characters or / and an image.

As an example of the hybrid display method, there is a method of displaying the first light and the second light at different display timings in the same pixel or the same sub-pixel. At this time, the first light and the second light of the same color tone (one of red, green, or blue, or cyan, magenta, or yellow) are simultaneously displayed and displayed in the same pixel or the same sub-pixel. Characters and / and images can be displayed in the unit.

In the hybrid display method, a plurality of lights may be displayed in adjacent pixels or adjacent sub-pixels instead of the same pixel or the same sub-pixel. In addition, displaying the first light and the second light at the same time means displaying the first light and the second light for the same period to the extent that the flicker is not perceived by the human eye, and the human eye. If you do not detect the flicker with the feeling of
The display period of the first light and the display period of the second light may be different from each other.

Further, the hybrid display is an aggregate having a plurality of display elements in the same pixel or the same sub-pixel, and each of the plurality of display elements displays in the same period.
Further, the hybrid display has a plurality of display elements and an active element for driving the display element in the same pixel or the same sub-pixel. Active elements include switches, transistors, thin film transistors and the like. Since the active element is connected to each of the plurality of display elements, the display of each of the plurality of display elements can be individually controlled.

As a configuration of the display device, a display panel having a first pixel and a second pixel, a control unit, and a control unit,
Can be configured to have. The control unit generates a first gradation value to be output to the first pixel and a second gradation value to be output to the second pixel based on the image information input from the outside.
Output. Here, the image information is information including a gradation value corresponding to each pixel unit, and examples thereof include a video signal such as a video signal.

The control unit may have a function of selecting the display mode described above based on the illuminance of external light or the like.

Further, the first pixel has a first transistor electrically connected to the first display element.
The second pixel preferably has a second transistor that is electrically connected to the second display element.

At this time, it is preferable that the first transistor and the second transistor are formed on the same surface. At this time, either one of the first display element and the second display element is
It is preferable to be electrically connected to the first transistor or the second transistor through the opening provided in the insulating layer. As a result, the first transistor and the second transistor can be manufactured by the same process, so that the process can be simplified.

Further, by sandwiching the first display element, the second display element, and each transistor between the pair of substrates, it is possible to realize a display device having a thin thickness and a light weight.

Further, as the second display element using the transmitted light, a backlight and a transmission type display element can be combined. At this time, by using a light source exhibiting white light as a backlight and having a configuration in which the second display element has a colored layer (color filter), a configuration capable of color display can be achieved.

Further, the second display element may be configured to perform color display by a time gradation method (also referred to as a field sequential method). At this time, the backlight is red (R) and green (G).
) And blue (B) light can be dispersed in time, and a light source capable of repeatedly emitting light can be used. That is, by interlocking the second display element and the backlight, color display can be performed by the time gradation method.

At this time, in order to prevent the change in brightness from being perceived as flicker, it is preferable to increase the period (also referred to as drive frequency or subframe frequency) for changing the color of the light of the backlight. For example, the drive frequency is 30 Hz or more and 720 Hz or less, preferably 60 H.
z or more and 360 Hz or less, more preferably 60 Hz or more and 240 Hz or less, typically 18
It can be 0 Hz.

Hereinafter, a more specific example of one aspect of the present invention will be described with reference to the drawings.

[Display device configuration example]
FIG. 6 is a diagram illustrating a pixel array 40 included in the display device of one aspect of the present invention. The pixel array 40 has a plurality of pixel units 45 arranged in a matrix. The pixel unit 45 has a pixel 46 and a pixel 47.

In FIG. 7A, the first pixel 46 has a display element corresponding to white (W), and the second pixel 4
An example is shown in the case where 7 has a display element corresponding to three colors of red (R), green (G), and blue (B).

The first pixel 46 has a display element 46W corresponding to white (W). The display element 46W is
This is the first display element that utilizes the reflection of external light.

The second pixel 47 has a display element 32R corresponding to red (R), a display element 32G corresponding to green (G), and a display element 32B corresponding to blue (B). Display elements 32R, 32G, 3
Each of 2B is a second display element that transmits the light of the light source.

[Pixel unit configuration example]
FIG. 6B is a schematic diagram showing a configuration example of the pixel unit 45.

The first pixel 46 has a display element 46W. The display element 46W is an element that reflects and displays external light. The display element 46W reflects external light and emits white light Wr toward the display surface side.

The second pixel 47 has a display element 47R, a display element 47G, and a display element 47B. The display elements 47R, 47G, and 47B are elements that transmit visible light, respectively. Display element 47
R emits red light Rt toward the display surface side. Similarly, the display element 47G and the display element 47B are also used.
A green light Gt or a blue light Bt, respectively, is emitted to the display surface side.

Subsequently, the display mode by the pixel unit 45 will be described with reference to FIGS. 7A to 7C.

[First mode]
FIG. 7A corresponds to a mode (first mode) in which display is performed using only reflected light by driving the first pixel 46. For example, when the illuminance of the external light is sufficiently high, the pixel unit 45 uses only the light from the first pixel 46 without driving the second pixel 47, thereby producing the reflected light 55r. It can be ejected to the display surface side. As a result, it is possible to drive with extremely low power consumption. In addition, it is possible to perform a display that is easy on the eyes.

[Second mode]
FIG. 7B corresponds to a mode (second mode) in which display is performed using only transmitted light by driving the second pixel 47. For example, when the illuminance of external light is extremely small, the pixel unit 45 does not drive the first pixel 46, but the light from the second pixel 47 (light Rt,
By mixing only the light Gt and the light Bt), the light 55t of a predetermined color can be emitted to the display surface side. This makes it possible to perform a vivid display. Further, by lowering the brightness when the illuminance of the outside light is small, it is possible to suppress the glare felt by the user and reduce the power consumption.

[Third mode]
FIG. 7C corresponds to a mode (third mode) in which both the first pixel 46 and the second pixel 47 are driven within the same period to display the display. The pixel unit 45 is an optical Wr.
By mixing the four lights of light Rt, light Gt, and light Bt, 55 tr of light of a predetermined color in which reflected light and transmitted light are mixed can be emitted to the display surface side.

[Modification example]
In the above, the first pixel 46 has a display element corresponding to white, and the second pixel 47 is red (R).
), Green (G), and blue (B) are shown, but the present invention is not limited to this. In the following, a configuration example different from the above is shown.

In FIGS. 8A and 8B, the first pixel 46 has three red (R), green (G), and blue (B).
An example of having a display element corresponding to a color is shown.

The first pixel 46 includes a display element 46R, a display element 46G, and a display element 46B. The display elements 46R, 31G, and 31B are elements that reflect and display external light, respectively. Display element 4
6R reflects external light and emits red light Rr toward the display surface side. Similarly, the display element 46G and the display element 46B also emit green light Gr or blue light Br toward the display surface side.

FIG. 8B corresponds to a mode (third mode) in which display is performed by driving both the first pixel 46 and the second pixel 47. The pixel unit 45 includes light Rr, light Gr, light Br, and light R.
By mixing the six lights of t, light Gt, and light Bt, light 35 tr of a predetermined color in which reflected light and transmitted light are mixed can be emitted to the display surface side.

At this time, the light Rr, the light Gr, and the light B so that the light 55 tr becomes light having a predetermined brightness and chromaticity.
There are a plurality of combinations of brightness of each of the six lights of r, light Rt, light Gt, and light Bt. Therefore, among the combinations of the brightness (gradation) of each of the six lights that realize the light 55tr of the same brightness and chromaticity, the brightness (gradation) of the light Rr, the light Gr, and the light Br emitted from the first pixel 46. ) Is preferably selected. This makes it possible to reduce power consumption without sacrificing color reproducibility.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

(Embodiment 3)
Hereinafter, an example of a display panel that can be used in the display device of one aspect of the present invention will be described. The display panel illustrated below is a display panel having both a reflective liquid crystal element and a transmissive liquid crystal element, and capable of displaying both a transmissive mode and a transmissive mode.

[Configuration example]
FIG. 9A is a block diagram showing an example of the configuration of the display device 800. The display device 800 has a plurality of pixels 850 arranged in a matrix on the display unit 801. Display device 80
0 has a circuit GD and a circuit SD. It also has a plurality of pixels 850 arranged in the direction R, a plurality of wirings G1 electrically connected to the circuit GD, a plurality of wirings G2, a plurality of wiring ANOs, and a plurality of wiring CSCOMs. It also has a plurality of pixels 850 arranged in the direction C, and a plurality of wirings S1 and a plurality of wirings S2 electrically connected to the circuit SD.

Although the configuration having one circuit GD and one circuit SD is shown here for simplicity, the circuit GD and circuit SD for driving the liquid crystal element, and the circuit GD and circuit SD for driving the light emitting element are shown.
And may be provided separately.

The pixel 850 has a reflective liquid crystal element and a transmissive liquid crystal element.

FIG. 9B1 shows a configuration example of the electrode 861 included in the pixel 850. Electrode 861 is pixel 8
It functions as a reflective electrode of the reflective liquid crystal element in 50. Further, the electrode 861 has an opening 8
51 is provided.

FIG. 9B1 shows a transmissive liquid crystal element 860 located in a region overlapping the electrode 861 with a broken line. The transmissive liquid crystal element 860 is arranged so as to overlap with the opening 851 of the electrode 861. As a result, the light transmitted through the transmissive liquid crystal element 860 is emitted toward the display surface side through the opening 851.

FIG. 9 (B1) shows two pixels 850 arranged in the direction C. One electrode 861
Has one opening 851. At this time, the transmissive liquid crystal element 860 is driven by the time gradation method, so that the red (R) and green (G) are temporally dispersed through the opening 851.
, Blue (B) and the like can be emitted.

FIG. 9 (B2) shows an example in which one electrode 861 has three openings 851. At this time, a transmissive liquid crystal element 860 that transmits different colors is superposed on each opening 851. As a result, light of different colors is emitted from each transmissive liquid crystal element 860 to the display surface side through the three openings 851.

If the value of the ratio of the total area of the opening 851 to the total area of the non-opening is too large, the display using the reflective liquid crystal element becomes dark. Further, if the value of the ratio of the total area of the opening 851 to the total area of the non-opening is too small, the display using the transmissive liquid crystal element 860 becomes dark.

Further, if the area of the opening 851 provided in the electrode 861 functioning as the reflective electrode is too small, the efficiency of the light that can be extracted from the light emitted by the transmissive liquid crystal element 860 is lowered.

The shape of the opening 851 can be, for example, a polygon, a quadrangle, an ellipse, a circle, a cross, or the like. Further, it may have an elongated streak shape, a slit shape, or a checkered pattern shape. Further, the opening 851 may be arranged close to the adjacent pixel.

[Circuit configuration example]
FIG. 10 is a circuit diagram showing a configuration example of the pixel 850. In FIG. 10, two adjacent pixels 8
Shows 50.

The pixel 850 includes a switch SW1, a capacitive element C1, a liquid crystal element 870, a switch SW2, a switch SW2, a capacitive element C2, a liquid crystal element 860, and the like. Further, the pixel 850 has
Wiring G1, wiring G2, wiring CSCOM, wiring S1, and wiring S2 are electrically connected. Further, FIG. 10 shows a wiring VCOM1 electrically connected to the liquid crystal element 870 and a wiring VCOM2 electrically connected to the liquid crystal element 860.

FIG. 10 shows an example in which a transistor is used for the switch SW1 and the switch SW2.

In the switch SW1, the gate is connected to the wiring G1, and one of the source and the drain is the wiring S.
1 is connected, and the other of the source or drain is connected to one electrode of the capacitive element C1 and one electrode of the liquid crystal element 870. In the capacitive element C1, the other electrode is wired CSCOM.
Is connected to. The other electrode of the liquid crystal element 870 is connected to the wiring VCOM1.

In the switch SW2, the gate is connected to the wiring G2, and one of the source and the drain is the wiring S.
2 is connected, and the other of the source or drain is connected to one electrode of the capacitive element C2 and one electrode of the liquid crystal element 860. In the capacitive element C2, the other electrode is wired CSCOM.
Is connected to. The other electrode of the liquid crystal element 860 is connected to the wiring VCOM2.

A signal for controlling the switch SW1 to be in a conducting state or a non-conducting state can be given to the wiring G1. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the orientation state of the liquid crystal of the liquid crystal element 870 can be given to the wiring S1. Wiring CSCO
A predetermined potential can be given to M.

A signal for controlling the switch SW2 in a conducting state or a non-conducting state can be given to the wiring G2. A predetermined potential can be applied to the wiring VCOM2. A signal for controlling the alignment state of the liquid crystal of the liquid crystal element 860 can be given to the wiring S2.

For example, when displaying the reflection mode, the pixel 850 shown in FIG. 10 can be driven by a signal given to the wiring G1 and the wiring S1 and can be displayed by utilizing optical modulation by the liquid crystal element 870. Further, when the display is performed in the transmission mode, the display can be performed by using the optical modulation by the liquid crystal element 860, which is driven by the signals given to the wiring G2 and the wiring S2. Further, when driving in both modes, it can be driven by the signals given to each of the wiring G1, the wiring G2, the wiring S1 and the wiring S2.

Note that FIG. 10 shows an example in which one liquid crystal element 870 and one liquid crystal element 860 are provided in one pixel 850. By driving the liquid crystal element 860 by the time gradation method, full-color display is possible with one pixel 850 when displaying in the transmission mode or both modes.

FIG. 11 shows an example in which one pixel 850 has one reflective liquid crystal element 870 and three transmissive liquid crystal elements (liquid crystal element 860r, liquid crystal element 860 g, and liquid crystal element 860b). The liquid crystal element 860r, the liquid crystal element 860g, and the liquid crystal element 860b are transmissive liquid crystal elements that transmit red (R), green (G), and blue (B) light, respectively. When the pixel 850 shown in FIG. 11 is displayed in the transmission mode or both modes, the pixel 850 can be displayed in full color by the three transmission type liquid crystal elements.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

[Display panel configuration example]
FIG. 12 is a schematic perspective view of a display panel 510 according to an aspect of the present invention. The display panel 510 has a configuration in which the substrate 511 and the substrate 512 are bonded to each other. In FIG. 12, the substrate 512 is clearly indicated by a broken line.

The display panel 510 includes a display unit 514, a circuit 516, wiring 518, and the like. The substrate 511 is provided with, for example, a circuit 516, wiring 518, an electrode 524 that functions as a pixel electrode, and the like. FIG. 12 shows an example in which the IC 520 and the FPC 522 are mounted on the display panel 510. Therefore, the configuration shown in FIG. 12 can also be said to be a display module having a display panel 510, an IC 520, and an FPC 522.

As the circuit 516, for example, a circuit that functions as a scanning line drive circuit can be used.

The wiring 518 has a function of supplying signals and power to the display unit 514 and the circuit 516. The signal and power are wired from the outside via FPC522 or from IC520.
It is input to 18.

Further, FIG. 12 shows an example in which the IC 520 is provided on the substrate 511 by the COG (Chip On Glass) method or the like. As the IC 520, an IC having a function as, for example, a scanning line drive circuit or a signal line drive circuit can be applied. When the display panel 510 includes a circuit that functions as a scanning line drive circuit and a signal line drive circuit, or a circuit that functions as a scanning line drive circuit or a signal line drive circuit is provided externally, the display panel 51 is provided via the FPC 522.
When a signal for driving 0 is input, the IC 520 may not be provided. Further, the IC520 is used in the FPC5 by the COF (Chip On Film) method or the like.
It may be mounted on 22.

FIG. 12 shows an enlarged view of a part of the display unit 514. Electrodes 524 of the plurality of display elements are arranged in a matrix on the display unit 514. The electrode 524 has a function of reflecting visible light and functions as a reflection electrode of the liquid crystal element 550 described later.

Further, as shown in FIG. 12, the electrode 524 has an opening 526. Further, the display unit 514 has a transmissive liquid crystal element 570 on the substrate 511 side of the electrode 524. Liquid crystal element 570
The light from the electrode 524 is emitted to the substrate 512 side through the opening 526 of the electrode 524. Liquid crystal element 5
The area of the transmission region of 70 may be equal to the area of the opening 526. It is preferable that one of the area of the transmission region of the liquid crystal element 570 and the area of the opening 526 is larger than the other because the margin for misalignment becomes large.

Further, an input device 130 can be provided on the substrate 512. For example, input device 130
As a result, a sheet-shaped capacitive touch sensor may be provided so as to be superimposed on the display unit 514. Alternatively, a touch sensor may be provided between the substrate 511 and the substrate 512. When a touch sensor is provided between the substrate 511 and the substrate 512, an optical touch sensor using a photoelectric conversion element may be applied in addition to the capacitive touch sensor.

FIG. 13 is a diagram showing an example of a capacitive touch sensor provided on the substrate, and is shown in an enlarged view. FIG. 14A is a top view of the touch sensor, and has a configuration having a proximity sensor. 14 (B) is a cross-sectional view taken along the line X3-X4 of FIG. 14 (A). The substrate 560 provided with the touch sensor corresponds to the second substrate 12 shown in FIG. 1 and the like.

The insulating film 501B shown in FIG. 14B corresponds to the adhesive layer 26 shown in FIG. 1 and the like. Further, the insulating film 572 includes a region sandwiched between the insulating film 501B and the proximity sensor 575.

A detection element that detects changes in capacitance, illuminance, magnetic force, radio waves, pressure, etc. caused by a proximity object and supplies a signal based on the detected physical quantity can be used for the proximity sensor 575.

For example, a conductive film, a photoelectric conversion element, a magnetic detection element, a piezoelectric element, a resonator, or the like can be used as the detection element.

For example, a detection circuit having a function of supplying a signal that changes based on the capacitance parasitic on the conductive film can be used for the proximity sensor 575. A control signal can be supplied to the first electrode, and the potential or current of the second electrode that changes based on the supplied control signal and capacitance can be detected and supplied as a detection signal. This makes it possible to detect a finger or the like close to the conductive film in the atmosphere by using a change in capacitance.

For example, the first electrode C1 (g) and the second electrode C2 (h) can be used for the proximity sensor 575 (see FIGS. 12 and 13 (A)). The second electrode C2 (h) is the first.
A portion that does not overlap with the electrode C1 (g) of the above is provided. Further, g and h are natural numbers of 1 or more.

Specifically, it intersects the row direction with the first electrode C1 (g) electrically connected to the control line CL (g) extending in the row direction (direction of the arrow indicated by R in the figure). A second electrode C2 (h) electrically connected to the signal line ML (h) extending in the row direction (direction of the arrow indicated by C in the figure) can be used for the proximity sensor 575.

For example, a conductive film having a translucent region in a region overlapping the pixel 410 is provided with the first electrode C1 (
It can be used for g) or the second electrode C2 (h).

For example, a mesh-like conductive film having an opening 576 in a region overlapping the pixel 410 can be used for the first electrode C1 (g) or the second electrode C2 (h).

The control line CL (g) includes wiring BR (g, h). The control line CL (g) is the wiring BR (g,
At h), it intersects the signal line ML (h) (see FIG. 13B).

For example, the laminated film can be used for the first electrode C1 (g), the second electrode C2 (h), the control line CL (g), or the signal line ML (h). Specifically, the conductive film CL (g) A is used as a dark color film C.
The conductive film CL (g) A and the dark color film CL (so as to be sandwiched between L (g) B and the pixel 410.
g) A laminated film in which B is laminated can be used.

For example, a film having a reflectance lower than that of the conductive film CL (g) A for visible light can be used as a dark color film CL (g) B.
Can be used for. Thereby, the reflection of visible light by the first electrode C1 (g), the second electrode C2 (h), the control line CL (g) or the signal line ML (h) can be weakened. As a result, the display of the display unit 514 can be made to stand out and a good display can be performed. In addition, the display device can be made thinner. In addition, the stress generated on the substrate 560 or the like when the display device is bent can be reduced.

For example, a material that can be used for wiring G1, wiring G2, wiring ANO, wiring CSCOM, and the like can be used for the conductive film CL (g) A.

Further, for example, a film containing copper oxide, a film containing copper chloride or tellurium chloride, or the like is used as a dark color film CL (g).
) Can be used for B. Further, the dark color film CL (g) B is composed of Ag particles, Ag fibers, and the like.
It may be formed by using metal fine particles such as Cu particles, nanocarbon particles such as carbon nanotubes (CNT) and graphene, or conductive polymers such as PEDOT, polyaniline and polypyrrole.

Further, the proximity sensor 575 has an insulating film 5 between the wiring BR (g, h) and the signal line ML (h).
71 is provided. This makes it possible to prevent a short circuit between the wiring BR (g, h) and the signal line ML (h).

[Cross section configuration example]
A specific cross-sectional configuration example of the display device according to one aspect of the present invention will be described with reference to FIGS. 15 to 17.

<Cross section configuration example 1>
First, the display device 100A will be described with reference to FIG.

The display device 100A includes a first substrate 103 and a second substrate 104, and the first substrate 1
A first liquid crystal element 105 and a second liquid crystal element 108 are sandwiched between 03 and the second substrate 104.

Further, the first liquid crystal element 105 is a first liquid crystal layer 105LC located between the first electrode 105PE, the second electrode 105CE, the first electrode 105PE and the second electrode 105CE.
And have. Further, the second liquid crystal element 108 includes the third electrode 108PE and the fourth electrode 1.
It has 08CE and a second liquid crystal layer 108LC located between the third electrode 108PE and the fourth electrode 108CE.

Further, an element layer 110 is provided between the first liquid crystal element 105 and the second liquid crystal element 108. In the present embodiment, the element layer 110 is formed with the first transistor 111 and the second transistor 112.

The first transistor 111 is arranged so as to overlap with the first electrode 105PE, and is partially separated from the first electrode 105PE via an insulating film (here, a plurality of insulating films). .. The first electrode 105PE and the first transistor 111 are electrically connected to each other via the first opening 114 formed in the insulating film and the electrode 116 formed in the first opening 114. Will be done. The electrode 116 may be referred to as a connecting electrode or a through electrode.

The second transistor 112 is arranged so as to overlap with the third electrode 108PE, and is partially separated from the third electrode 108PE via an insulating film (here, a plurality of insulating films). To. The third electrode 108PE and the second transistor 112 are electrically connected to each other via the second opening 118 formed in the insulating film.

The first liquid crystal element 105 has a function of displaying an image by reflecting light, and the second liquid crystal element 108 has a function of displaying an image by transmitting light. That is, the first liquid crystal element 105 is a reflective liquid crystal element, and the second liquid crystal element 108 is a transmissive liquid crystal element.

Below the second substrate 104, the light emitting device 122 is arranged via the polarizing plate 120. The light emitting device 122 has a function as a so-called backlight unit, and has an edge light 122E, a light guide plate 122G, a light extraction unit 122R, and the like.

In FIG. 15, the light emitted from the edge light 122E is represented by a dotted arrow. In the light emitting device 122, the light emitted from the edge light 122E is the light guide plate 122G.
The light is collected by the light extraction unit 122R and ejected to the second liquid crystal element 108 side.
That is, the light extraction unit 122R has a function as a so-called lens (also referred to as a micro lens).

Further, a first structure 124 is provided on the element layer 110 that overlaps with the light extraction unit 122R. The first structure 124 has at least a reflective film 124R. The light that has passed through the light extraction unit 122R is further collected by the reflective film 124R of the first structure 124, and is first.
Is ejected to the substrate 103 side of.

The reflective film 124R included in the first structure 124 has a shape in which the inner wall thereof continuously decreases in width from the incident side (the substrate 104 side) to the ejection side (the substrate 103 side). for example,
It may have a shape obtained by cutting out a part of a cone. In particular, it is preferable that the inner wall has a constricted three-dimensional curved surface shape (for example, a trumpet shape). In addition, the reflective film 124
It is preferable that the inner wall of R has a shape in which the surfaces of the pair of inner walls facing each other have a shape close to a hyperbola in a cross section perpendicular to the substrate 104 or the like.

Since the first structure 124 has the above-mentioned shape, the light emitted from the light extraction unit 122R and transmitted through the second liquid crystal element 108, which is obliquely incident on the first structure 124. Is reflected by the reflective film 124R of the first structure 124, so that the brightness (luminous flux per unit area) is increased.

The smaller the opening area on the ejection side of the reflective film 124R of the first structure 124 is smaller than the opening area on the incident side, and the inclination angle of the side surface of the reflective film 124R (the angle formed by the side surface and the surface of the substrate 103 or the like). The closer to 90 degrees and the higher the reflectance of the reflective film 124R, the higher the brightness of the light transmitted through the first structure 124.

Further, it is preferable that the region of the first structure 124 surrounded by the reflective film 124R has a high light transmittance. For example, it is preferable to use a material containing aluminum or silver. Further, it is preferable that the region has a high refractive index. For example, it is preferable to use a material having an absolute refractive index greater than 1 and 2.5 or less, preferably 1.2 or more and 2.0 or less, and more preferably 1.3 or more and 1.9 or less.

Further, above the first structure 124 and above the first electrode 105PE and the second electrode 105C.
A second structure 126 is provided between E. The second structure 126 is the first electrode 10.
It has a function of controlling the distance between the 5PE and the second electrode 105CE. That is, the second
The structure 126 of the above has a function as a so-called gap spacer or a cell gap spacer.

The second structure 126 preferably transmits visible light. The light collected by the first structure 124 is emitted to the first substrate 103 side via the second structure 126. Further, by providing the second structure 126 above the first structure 124, it also has a function of suppressing the light emitted from the edge light 122E from being absorbed by the first liquid crystal layer 105LC.

Above the first substrate 103, a light diffusing plate 128 and a polarizing plate 132 are provided.

Further, the input device 130 provided on the substrate 560 has a polarizing plate 132 via the adhesive layer 141.
Will be pasted together.

<Cross section configuration example 2>
Next, the display device 100B will be described with reference to FIG. The display device 100B is a modification of the display device 100A shown above.

The display device 100B has an insulating layer 134, a colored layer 136, and an insulating layer 138 between the second electrode 105CE and the substrate 103, in addition to the configuration of the display device 100A shown above.

The colored layer 136 has a function as a so-called color filter. The insulating layer 138 is a colored layer 1
It has a function of controlling the thickness of 36.

For example, as shown in FIG. 16, the insulating layer 138 is provided in a portion overlapping with the first liquid crystal element 105, and has an opening in the portion overlapping with the second liquid crystal element 108. This will result in
The colored layer 136 provided so as to cover the insulating layer 138 can be formed to be thicker in the portion overlapping with the second liquid crystal element 108 than in the portion overlapping with the first liquid crystal element 105. As a result, the first liquid crystal element 105, which is a reflective liquid crystal element, and the second liquid crystal element, which is a transmissive liquid crystal element.
The thickness of the colored layer 136 located on these optical paths can be made different from that of the liquid crystal element 108 of the above.

Further, in FIG. 16, the liquid crystal layer 108LC has a structure in which both ends thereof are surrounded by the resin layer 142. The resin layer 142 includes, for example, a resin and a liquid crystal material contained in the liquid crystal layer 108LC. By having the resin layer 142, the adhesion between the element layer 110 and the substrate 104 can be enhanced, and the mechanical strength of the display device 100B can be enhanced.

<Cross section configuration example 3>
Subsequently, the display device 100C will be described with reference to FIG. The display device 100C is a modification of the display device 100A and the display device 100B shown above.

In the display device 100C, the transistor 111 and the transistor 112 are formed on different insulating surfaces.

More specifically, the transistor 112 is provided on the substrate 104. Further, the transistor 111 and the transistor 112 are positioned so as to sandwich the second liquid crystal element 108.

Further, a colored layer 140 is provided between the second liquid crystal element 108 and the first structure 124.
The light emitted from the light extraction unit 122R and transmitted through the second liquid crystal element 108 is the colored layer 14.
It passes through 0, the first structure 124, and the second structure 126, and is ejected to the substrate 103 side.

[For each component]
Hereinafter, each component shown above will be described.

〔substrate〕
A material having a flat surface can be used for the substrate of the display panel. A material that transmits the light is used for the substrate on the side that extracts the light from the display element. For example, materials such as glass, quartz, ceramics, sapphire, and organic resins can be used.

By using a thin substrate, it is possible to reduce the weight and thickness of the display panel. Further, by using a substrate having a thickness sufficient to have flexibility, a flexible display panel can be realized.

Further, since the substrate on the side that does not emit light does not have to have translucency, a metal substrate or the like can be used in addition to the substrates listed above. Since the metal substrate has high thermal conductivity and can easily conduct heat to the entire substrate, it is possible to suppress a local temperature rise of the display panel, which is preferable. In order to obtain flexibility and bendability, the thickness of the metal substrate is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 50 μm or less.

The material constituting the metal substrate is not particularly limited, but for example, a metal such as aluminum, copper, or nickel, or an alloy such as an aluminum alloy or stainless steel can be preferably used.

Further, a substrate that has been subjected to an insulating treatment by oxidizing the surface of the metal substrate or forming an insulating film on the surface may be used. For example, an insulating film may be formed by a coating method such as a spin coating method or a dip method, an electrodeposition method, a vapor deposition method, a sputtering method, or the like, or the insulating film may be left or heated in an oxygen atmosphere, or may be anodized. An oxide film may be formed on the surface of the substrate by such means.

Examples of the material having flexibility and transparency to visible light include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethylmethacrylate resin, and polycarbonate. (PC) resin, polyether sulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin and the like can be mentioned. In particular, it is preferable to use a material having a low coefficient of thermal expansion, and for example, a polyamide-imide resin, a polyimide resin, PET or the like having a coefficient of thermal expansion of 30 × 10 ^-6 / K or less can be preferably used. Further, a substrate in which glass fiber is impregnated with an organic resin or a substrate in which an inorganic filler is mixed with an organic resin to lower the coefficient of thermal expansion can also be used. Since the weight of the substrate using such a material is light, the display panel using the substrate can also be made lightweight.

When the fiber is contained in the above material, the fiber is a high-strength fiber of an organic compound or an inorganic compound. The high-strength fiber specifically refers to a fiber having a high tensile elasticity or young ratio, and typical examples thereof include polyvinyl alcohol-based fiber, polyester-based fiber, polyamide-based fiber, polyethylene-based fiber, and aramid-based fiber. Polyparaphenylene benzobisoxazole fiber, glass fiber, or carbon fiber can be mentioned. Examples of the glass fiber include glass fibers using E glass, S glass, D glass, Q glass and the like. These may be used in the state of a woven fabric or a non-woven fabric, and a structure obtained by impregnating the fiber body with a resin and curing the resin may be used as a flexible substrate. It is preferable to use a structure made of a fibrous body and a resin as the flexible substrate because the reliability against breakage due to bending or local pressing is improved.

Alternatively, glass, metal, or the like thin enough to have flexibility can be used for the substrate. Alternatively, a composite material in which glass and a resin material are bonded by an adhesive layer may be used.

A flexible substrate has a hard coat layer (for example, silicon nitride, aluminum oxide, etc.) that protects the surface of the display panel from scratches, a layer made of a material that can disperse pressure (for example, aramid resin, etc.), and the like. It may be laminated. Further, in order to suppress a decrease in the life of the display element due to moisture or the like, an insulating film having low water permeability may be laminated on the flexible substrate.
For example, an inorganic insulating material such as silicon nitride, silicon oxide, silicon nitride, aluminum oxide, or aluminum nitride can be used.

The substrate can also be used by stacking a plurality of layers. In particular, if the structure has a glass layer, the barrier property against water and oxygen can be improved, and a highly reliable display panel can be obtained.

[Transistor]
The transistor has a conductive layer that functions as a gate electrode, a semiconductor layer, a conductive layer that functions as a source electrode, a conductive layer that functions as a drain electrode, and an insulating layer that functions as a gate insulating layer. The above shows the case where a transistor having a bottom gate structure is applied.

The structure of the transistor included in the display device according to one aspect of the present invention is not particularly limited. For example, it may be a planar type transistor, a stagger type transistor, or an inverted stagger type transistor. Further, either a top gate type or a bottom gate type transistor structure may be used. Alternatively, gate electrodes may be provided above and below the channel.

The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and is either an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region). May be used. It is preferable to use a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.

Further, as the semiconductor material used for the transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more can be used. A typical example is an oxide semiconductor containing indium, for example, CAC described later.
-OS or the like can be used.

Transistors using oxide semiconductors with a wider bandgap and lower carrier density than silicon retain the charge accumulated in the capacitive element connected in series with the transistor for a long period of time due to its low off-current. Is possible.

The semiconductor layer is represented by an In—M—Zn based oxide containing, for example, indium, zinc and M (metals such as aluminum, titanium, gallium, germanium, ittrium, zirconium, lanthanum, cerium, tin, neodymium or hafnium). It can be a membrane.

When the oxide semiconductor constituting the semiconductor layer is an In—M—Zn-based oxide, the atomic number ratio of the metal element of the sputtering target used for forming the In—M—Zn oxide is In ≧ M.
, Zn ≧ M is preferably satisfied. The atomic number ratios of the metal elements of such a sputtering target are In: M: Zn = 1: 1: 1, In: M: Zn = 1: 1: 1.2, In.
: M: Zn = 3: 1: 2, In: M: Zn = 4: 2: 3, In: M: Zn = 4: 2: 4.
1, In: M: Zn = 5: 1: 6, In: M: Zn = 5: 1: 7, In: M: Zn = 5:
1: 8 and the like are preferable. The atomic number ratio of the semiconductor layer to be formed includes a variation of plus or minus 40% of the atomic number ratio of the metal element contained in the sputtering target.

The transistor having the bottom gate structure exemplified in this embodiment is preferable because the manufacturing process can be reduced. Further, by using an oxide semiconductor at this time, it is possible to use a material having low heat resistance as an electrode material and a substrate material for the wiring below the semiconductor layer, which can be formed at a lower temperature than polycrystalline silicon. , The range of material choices can be expanded. For example, a glass substrate having an extremely large area can be preferably used.

As the semiconductor layer, an oxide semiconductor film having a low carrier density is used. For example, the semiconductor layer
The carrier density is 1 × 10 ¹⁷ / cm ³ or less, preferably 1 × 10 ¹⁵ / cm ³ or less, more preferably 1 × 10 ¹³ / cm ³ or less, more preferably 1 × 10 ¹¹ / cm ³ or less, still more preferably. Oxide semiconductors having a carrier density of less than 1 × 10 ¹⁰ / cm ³ and a carrier density of 1 × 10 ^-9 / cm ³ or more can be used. Such oxide semiconductors are referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors. As a result, the impurity concentration is low and the defect level density is low, so that it can be said that the oxide semiconductor has stable characteristics.

Not limited to these, a transistor having an appropriate composition may be used according to the required semiconductor characteristics and electrical characteristics (field effect mobility, threshold voltage, etc.) of the transistor. Further, in order to obtain the required semiconductor characteristics of the semiconductor, it is preferable that the carrier density, impurity concentration, defect density, atomic number ratio of metal element and oxygen, interatomic distance, density, etc. of the semiconductor layer are appropriate. ..

When silicon or carbon, which is one of the Group 14 elements, is contained in the oxide semiconductor constituting the semiconductor layer, oxygen deficiency increases in the semiconductor layer and the semiconductor layer becomes n-type. Therefore, the concentration of silicon and carbon in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is 2 ×.
It is 10 ¹⁸ atoms / cm ³ or less, preferably 2 × 10 ¹⁷ atoms / cm ³ or less.

In addition, alkali metals and alkaline earth metals may generate carriers when combined with oxide semiconductors, which may increase the off-current of the transistor. Therefore, the concentration of the alkali metal or alkaline earth metal obtained by the secondary ion mass spectrometry in the semiconductor layer is 1 × 10 ¹⁸ atoms / cm ³ or less, preferably 2 × 10 ¹⁶ atoms / cm.
Make it cm ³ or less.

Further, when nitrogen is contained in the oxide semiconductor constituting the semiconductor layer, electrons as carriers are generated, the carrier density is increased, and the n-type is easily formed. As a result, a transistor using an oxide semiconductor containing nitrogen tends to have normally-on characteristics. Therefore, the nitrogen concentration obtained by the secondary ion mass spectrometry in the semiconductor layer is preferably 5 × 10 ¹⁸ atoms / cm ³ or less.

Further, the semiconductor layer may have, for example, a non-single crystal structure. The non-single crystal structure is, for example, CAAC-OS (C-Axis Aligned Crystalli) having crystals oriented on the c-axis.
ne Oxide Semiconductor or C-Axis Align
d and AB-plane Anchored Crystalline Oxy
De Semiconductor), polycrystalline structure, microcrystalline structure, or amorphous structure. In the non-single crystal structure, the amorphous structure has the highest defect level density, and CAAC-OS has the lowest defect level density.

The oxide semiconductor film having an amorphous structure has, for example, a disordered atomic arrangement and has no crystal component. Alternatively, the oxide film having an amorphous structure is, for example, a completely amorphous structure and has no crystal portion.

The semiconductor layer has an amorphous structure region, a microcrystal structure region, a polycrystalline structure region, and a CAAC.
-A mixed film having two or more of the OS region and the single crystal structure region may be used. The mixed film may have, for example, a single-layer structure or a laminated structure including any two or more of the above-mentioned regions.
<CAC-OS configuration>
In the following, C can be used for the semiconductor layer of the transistor disclosed in one aspect of the present invention.
The details of the metal oxide having an AC configuration will be described. Here, CAC-OS will be used as a representative example of the metal oxide having a CAC configuration.

That is, the CAC-OS is a region 101 containing each element as a main component due to the uneven distribution of elements constituting the metal oxide, as in the example formed on the insulating film 106 shown in FIG. And regions 102 are formed, and each region is mixed and formed or dispersed in a mosaic pattern. That is, the element constituting the metal oxide is 0.5 nm or more and 10 nm or less, preferably 0.5 n.
It is a composition of a material unevenly distributed in a size of m or more and 3 nm or less or in the vicinity thereof.

The physical characteristics of the region where a specific element is unevenly distributed are determined by the properties of the element. For example, among the elements constituting the metal oxide, the region in which the element that tends to be an insulator is unevenly distributed is the dielectric region. On the other hand, among the elements constituting the metal oxide, the region in which the element that tends to be a conductor is unevenly distributed is the conductor region. Further, the conductor region and the dielectric region are mixed in a mosaic shape, so that the material functions as a semiconductor.

That is, the metal oxide in one aspect of the present invention is a kind of a matrix composite or a metal matrix composite in which materials having different physical properties are mixed.

The oxide semiconductor preferably contains at least indium. In particular, it preferably contains indium and zinc. In addition to them, the element M (M is gallium, aluminum, silicon, boron, ittrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum). , Tungsten, or one or more selected from gallium and the like).

For example, CAC-OS in In-Ga-Zn oxide (In-G among CAC-OS)
The a-Zn oxide may be particularly referred to as CAC-IGZO. ) Means indium oxide (hereinafter, InO _X1 (where X1 is a real number larger than 0)) or indium zinc oxide (hereinafter, In _X2 Zn _Y2 O _Z2 (hereinafter, X2, Y2, and Z2 are from 0)). Also a large real number)
And. ) And gallium oxide (hereinafter, GaO _X3 (X3 is a real number larger than 0)), or gallium zinc oxide (hereinafter, Ga _X4 Zn _Y4 O _Z4 (X4, Y4, and Z4 are more than 0). The material is separated into a mosaic-like structure, such as a large real number)), and the mosaic-like InO _X1 or In _X2 Zn _{Y2 OZ2} is uniformly distributed in the film (hereinafter, also referred to as cloud-like). It is said.).

That is, the CAC-OS has a region containing GaO _X3 as a main component and In _X2 Zn _Y2 O _Z2 .
Alternatively, it is a composite oxide semiconductor having a structure in which the region containing InO _X1 as a main component is mixed. In the present specification, for example, the atomic number ratio of In to the element M in the first region is larger than the atomic number ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the region 2.

In addition, IGZO is a common name and may refer to one compound consisting of In, Ga, Zn, and O. As a typical example, InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In ₍
Examples thereof include crystalline compounds represented by _{1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (-1 ≦ x0 ≦ 1, m0 is an arbitrary number).

The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. note that,
The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have a c-axis orientation and are connected without orientation on the ab plane.

On the other hand, CAC-OS relates to the material composition of oxide semiconductors. CAC-OS is In, G
In the material composition containing a, Zn, and O, a nanoparticulate region containing Ga as a main component was observed in a part, and a nanoparticulate region containing In as a main component was observed in a part, and each of them became a mosaic. A randomly distributed configuration. Therefore, in CAC-OS, the crystal structure is a secondary element.

The CAC-OS does not include a laminated structure of two or more types of films having different compositions.
For example, it does not include a structure consisting of two layers, a film containing In as a main component and a film containing Ga as a main component.

In some cases, a clear boundary cannot be observed between the region containing GaO _X3 as the main component and the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as the main component.

Instead of gallium, choose from aluminum, silicon, boron, ittrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium. When one or more of these are contained, in CAC-OS, a nanoparticulate region containing the element as a main component is observed in a part, and a nanoparticulate region containing In as a main component in a part. Is observed, and each is randomly dispersed in a mosaic pattern.

<Analysis of CAC-OS>
Subsequently, the results of measurement of the oxide semiconductor formed on the substrate by using various measurement methods will be described.

≪Sample composition and preparation method≫
Hereinafter, nine samples according to one aspect of the present invention will be described. Each sample is prepared under different conditions of the substrate temperature at the time of forming the oxide semiconductor and the oxygen gas flow rate ratio. The sample has a structure including a substrate and an oxide semiconductor on the substrate.

The method of preparing each sample will be described.

First, a glass substrate is used as the substrate. Subsequently, a sputtering device is used to form an In-Ga-Zn oxide having a thickness of 100 nm as an oxide semiconductor on a glass substrate. The film forming conditions are that the pressure in the chamber is 0.6 Pa, and the target is an oxide target (
In: Ga: Zn = 4: 2: 4.1 [atomic number ratio]) is used. Further, 2500 W of AC power is supplied to the oxide target installed in the sputtering apparatus.

As a condition for forming the oxide film, the substrate temperature is not intentionally heated (hereinafter referred to as “the temperature”).
Room temperature or R. T. Also called. ), 130 ° C, or 170 ° C. Further, the flow rate ratio of oxygen gas to the mixed gas of Ar and oxygen (hereinafter, also referred to as oxygen gas flow rate ratio) is 10%.
By setting it to 30% or 100%, 9 samples are prepared.

<< Analysis by X-ray diffraction >>
In this item, X-ray diffraction (XRD: X-ray diffraction) is applied to 9 samples.
n) The result of the measurement will be described. As an XRD device, Bruker's D
8 ADVANCE was used. The condition is θ / 2 by the Out-of-plane method.
In the θ scan, the scanning range was set to 15 deg. To 50 deg. , Step width 0.02 de
g. , Scanning speed is 3.0 deg. It was set to / minute.

FIG. 19 shows the results of measuring the XRD spectrum using the Out-of-plane method.
In FIG. 19, the upper row shows the measurement result of the sample having the substrate temperature condition of 170 ° C. at the time of film formation, the middle row shows the measurement result of the sample having the substrate temperature condition of 130 ° C. at the time of film formation, and the lower row shows the measurement result of the sample having the substrate temperature condition at the time of film formation. The substrate temperature condition is R. T. The measurement result in the sample of is shown. In addition, the left column shows the measurement results for a sample with an oxygen gas flow rate ratio of 10%, and the center column shows the oxygen gas flow rate condition of 3.
The measurement results for the 0% sample and the measurement results for the sample with the oxygen gas flow rate ratio of 100% are shown in the right column.

In the XRD spectrum shown in FIG. 19, the peak intensity near 2θ = 31 ° is increased by increasing the substrate temperature at the time of film formation or increasing the ratio of the oxygen gas flow rate ratio at the time of film formation. The peak near 2θ = 31 ° is a crystalline IGZO compound (CAAC (c-axis aligned crystall) oriented in the c-axis in a direction substantially perpendicular to the surface to be formed or the upper surface.
ine) -Also known as IGZO. ) Is known to be derived from.

Further, in the XRD spectrum shown in FIG. 19, a clear peak did not appear as the substrate temperature at the time of film formation was lower or the oxygen gas flow rate ratio was smaller. Therefore, it can be seen that in the sample in which the substrate temperature at the time of film formation is low or the oxygen gas flow rate ratio is small, the orientation of the measurement region in the ab plane direction and the c-axis direction is not observed.

≪Analysis by electron microscope≫
In this item, the substrate temperature at the time of film formation R. T. , And a sample prepared at an oxygen gas flow rate ratio of 10% was used as HAADF (High-Angle Anal Dark Field) -ST.
EM (Scanning Transition Electron Micros)
The results of observation and analysis by copy) will be described below (hereinafter, HAADF-S).
The image acquired by TEM is also referred to as a TEM image. ).

The results of image analysis of a planar image (hereinafter, also referred to as a planar TEM image) and a sectional image (hereinafter, also referred to as a sectional TEM image) acquired by HAADF-STEM will be described.
The TEM image was observed using the spherical aberration correction function. The HAADF-STEM image was photographed by irradiating an electron beam with an acceleration voltage of 200 kV and a beam diameter of about 0.1 nmφ using an atomic resolution analysis electron microscope JEM-ARM200F manufactured by JEOL Ltd.

FIG. 20A shows the substrate temperature R. at the time of film formation. T. , And a planar TEM image of the sample prepared at an oxygen gas flow rate ratio of 10%. FIG. 20B shows the substrate temperature R. at the time of film formation. T. , And a cross-sectional TEM image of a sample prepared at an oxygen gas flow rate ratio of 10%.

≪Analysis of electron diffraction pattern≫
In this item, the substrate temperature at the time of film formation R. T. , And the result of acquiring an electron beam diffraction pattern by irradiating a sample prepared with an oxygen gas flow rate ratio of 10% with an electron beam having a probe diameter of 1 nm (also referred to as a nanobeam electron beam) will be described.

The substrate temperature R. at the time of film formation shown in FIG. 20 (A). T. , And in a planar TEM image of the sample prepared at an oxygen gas flow rate ratio of 10%, the electron diffraction patterns shown by the black dots a1, the black dots a2, the black dots a3, the black dots a4, and the black dots a5 are observed. The electron diffraction pattern is observed while irradiating the electron beam and moving it from the position of 0 seconds to the position of 35 seconds at a constant speed. The result of the black point a1 is shown in FIG. 20 (C), the result of the black point a2 is shown in FIG. 20 (D), and the result of the black point a3 is shown in FIG.
E), the result of the black point a4 is shown in FIG. 19 (F), and the result of the black point a5 is shown in FIG. 19 (G).

From FIGS. 20 (C), 20 (D), 20 (E), 20 (F), and 20 (G).
A region with high brightness can be observed in a circle (ring shape). In addition, multiple spots can be observed in the ring-shaped area.

Further, the substrate temperature R.A. at the time of film formation shown in FIG. 20 (B). T. , And in the cross-sectional TEM image of the sample prepared at an oxygen gas flow rate ratio of 10%, the electron diffraction patterns shown by the black spots b1, the black spots b2, the black spots b3, the black spots b4, and the black spots b5 are observed. The result of the black point b1 is shown in FIG. 20 (H), the result of the black point b2 is shown in FIG. 20 (I), the result of the black point b3 is shown in FIG. 20 (J), and the result of the black point b4 is shown in FIG.
The results of K) and the black spot b5 are shown in FIG. 20 (L).

From FIGS. 20 (H), 20 (I), 20 (J), 20 (K), and 20 (L).
A ring-shaped area with high brightness can be observed. In addition, multiple spots can be observed in the ring-shaped area.

Here, for example, when an electron beam having a probe diameter of 300 nm is incident on CAAC-OS having a crystal of InGaZnO ₄ in parallel with the sample surface, the crystal of InGaZnO ₄ (009) is incident.
) A diffraction pattern including spots due to the surface can be seen. That is, it can be seen that the CAAC-OS has a c-axis orientation and the c-axis is oriented in a direction substantially perpendicular to the surface to be formed or the upper surface. On the other hand, when an electron beam having a probe diameter of 300 nm is incident on the same sample perpendicularly to the sample surface, a ring-shaped diffraction pattern is confirmed. That is, the CAAC-OS has a-axis and b.
It can be seen that the axis has no orientation.

In addition, an oxide semiconductor having microcrystals (nano crystalline oxide)
semiconductor ductor. Hereinafter, it is referred to as nc-OS. ) With respect to the large probe diameter (
For example, when electron beam diffraction using an electron beam of 50 nm or more) is performed, a diffraction pattern such as a halo pattern is observed. Further, when nanobeam electron diffraction using an electron beam having a small probe diameter (for example, less than 50 nm) is performed on the nc-OS, a bright spot is observed. Further, when nanobeam electron diffraction is performed on nc-OS, a region having high brightness (in a ring shape) may be observed in a circular motion. Furthermore, multiple bright spots may be observed in the ring-shaped region.

Substrate temperature at the time of film formation R. T. , And the electron diffraction pattern of the sample prepared at an oxygen gas flow rate ratio of 10% has a ring-shaped high-luminance region and a plurality of bright spots in the ring region. Therefore, the substrate temperature at the time of film formation R. T. , And the sample prepared at an oxygen gas flow rate ratio of 10% has an electron diffraction pattern of nc-OS and has no orientation in the planar direction and the cross-sectional direction.

From the above, oxide semiconductors with a low substrate temperature or a small oxygen gas flow rate ratio at the time of film formation are available.
It can be presumed that the oxide semiconductor film having an amorphous structure and the oxide semiconductor film having a single crystal structure have distinctly different properties.

≪Elemental analysis≫
In this item, energy dispersive X-ray spectroscopy (EDX: Energy Dispersive)
By acquiring and evaluating EDX mapping using eX-ray spectroscopy), the substrate temperature at the time of film formation R. T. , And the results of elemental analysis of the sample prepared at an oxygen gas flow rate ratio of 10% will be described. For the EDX measurement, an energy dispersive X-ray analyzer JED-2300T manufactured by JEOL Ltd. is used as an elemental analyzer. A Si drift detector is used to detect the X-rays emitted from the sample.

In the EDX measurement, electron beam irradiation is performed at each point in the analysis target region of the sample, and the energy and the number of generations of the characteristic X-ray of the sample generated by this are measured to obtain the EDX spectrum corresponding to each point. In the present embodiment, the peak of the EDX spectrum at each point is the electron transition of the In atom to the L shell, the electron transition of the Ga atom to the K shell, the electron transition of the Zn atom to the K shell, and the K shell of the O atom. Attributable to the electron transition to, the ratio of each atom at each point is calculated. By doing this for the analysis target region of the sample, EDX mapping showing the distribution of the ratio of each atom can be obtained.

In FIG. 21, the substrate temperature R. at the time of film formation is shown. T. , And EDX mapping in cross section of the sample prepared at an oxygen gas flow rate ratio of 10%. FIG. 21 (A) shows the EDX mapping of Ga atoms (
The ratio of Ga atoms to all atoms is in the range of 1.18 to 18.64 [atomic%]. ). FIG. 21B is an EDX mapping of In atoms (the ratio of In atoms to all atoms is in the range of 9.28 to 33.74 [atomic%]). FIG. 21 (
C) is an EDX mapping of Zn atoms (the ratio of Zn atoms to all atoms is 6.69 to 2).
The range is 4.99 [atomic%]. ). Further, FIGS. 21 (A) and 21 (B).
) And FIG. 21 (C) show the substrate temperature R. at the time of film formation. T. , And in the cross section of the sample prepared at an oxygen gas flow rate ratio of 10%, the region of the same range is shown. The EDX mapping is
In the range, the more elements to be measured, the brighter it is, and the less elements to be measured, the darker it is.
The ratio of elements is shown in light and dark. The magnification of the EDX mapping shown in FIG. 21 is 7.2 million times.

In the EDX mapping shown in FIGS. 21 (A), 21 (B), and 21 (C), a relative light-dark distribution is seen in the image, and the substrate temperature R.I. T. , And oxygen gas flow rate ratio 10%
It can be confirmed that each atom has a distribution in the sample prepared in. Here, attention is paid to the range surrounded by the solid line and the range surrounded by the broken line shown in FIGS. 21 (A), 21 (B), and 21 (C).

In FIG. 21A, the range surrounded by the solid line includes many relatively dark areas, and the range surrounded by the broken line includes many relatively bright areas. Further, in FIG. 21B, the range surrounded by the solid line includes many relatively bright regions, and the range surrounded by the broken line includes many relatively dark regions.

That is, the range surrounded by the solid line is a region having a relatively large number of In atoms, and the range surrounded by a broken line is a region having a relatively small number of In atoms. Here, in FIG. 21C, in the range surrounded by the solid line,
The right side is a relatively bright area and the left side is a relatively dark area. Therefore, the range surrounded by the solid line is a region whose main component is In _X2 Zn _Y2 O _Z2 , In O _X 1, or the like.

Further, the range surrounded by the solid line is a region having a relatively small number of Ga atoms, and the range surrounded by a broken line is a region having a relatively large number of Ga atoms. In FIG. 21C, in the range surrounded by the broken line, the upper left region is a relatively bright region, and the lower right region is a relatively dark region. Therefore, the range surrounded by the broken line is a region whose main component is GaO _X3 , Ga _X4 Zn _Y4 O _Z4 , or the like.

Further, from FIGS. 21 (A), 21 (B), and 21 (C), the distribution of In atoms is Ga.
The region that is relatively more uniformly distributed than the atom and whose main component is InO _X1 is In _X2 .
It seems that Zn _Y2 O _Z2 is connected to each other through a region containing the main component. As described above, the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component is formed so as to spread like a cloud.

In this way, the region containing GaO _X3 or the like as the main component and In _X2 Zn _Y2 O _Z2 or I
In-Ga-Zn having a structure in which the region containing _noX1 as a main component is unevenly distributed and mixed.
The oxide can be referred to as CAC-OS.

Further, the crystal structure in CAC-OS has an nc structure. Nc possessed by CAC-OS
The structure has several or more bright spots (spots) in the electron diffraction image in addition to the bright spots (spots) caused by IGZO containing a single crystal, a polycrystal, or a CAAC structure. or,
The crystal structure is defined as a ring-shaped region with high brightness appearing in addition to several or more bright spots.

Further, from FIGS. 21 (A), 21 (B), and 21 (C), the region in which GaO _X3 or the like is the main component, and the region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component The size is observed at 0.5 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less. In EDX mapping, the diameter of the region in which each element is the main component is preferably 1 nm or more and 2 nm or less.

From the above, CAC-OS has a structure different from that of the IGZO compound in which metal elements are uniformly distributed, and has properties different from those of the IGZO compound. That is, the CAC-OS is phase-separated into a region containing GaO _X3 or the like as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component, and a region containing each element as a main component. Has a mosaic-like structure.

Here, the region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component is GaO _X3 .
This is a region with high conductivity as compared with the region where the main component is. That is, In _X2 Zn _Y
When a carrier flows through a region containing ₂ O _Z2 or InO _X1 as a main component, conductivity as an oxide semiconductor is exhibited. Therefore, In _X2 Zn _Y2 O _Z2 , or In
High field effect mobility (μ) can be realized by distributing the region containing _OX1 as the main component in the oxide semiconductor in a cloud shape.

On the other hand, the region in which GaO _X3 or the like is the main component is In _X2 Zn _Y2 O _Z2 or InO _X.
This is a region having higher insulating properties than the region in which ₁ is the main component. That is, since the region containing GaO _X3 or the like as the main component is distributed in the oxide semiconductor, leakage current can be suppressed and good switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulating property caused by GaO _X3 and the like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act in a complementary manner, so that the insulation is high. _On current (Ion) and high field effect mobility (μ) can be achieved.

Further, the semiconductor element using CAC-OS has high reliability. Therefore, CAC-OS is most suitable for various semiconductor devices such as displays.

Alternatively, silicon may be used for the semiconductor in which the channel of the transistor is formed. Amorphous silicon may be used as the silicon, but it is particularly preferable to use silicon having crystallinity. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single crystal silicon, or the like. In particular, polycrystalline silicon can be formed at a lower temperature than single crystal silicon.
Moreover, it has higher field effect mobility and higher reliability than amorphous silicon.

The transistor having the bottom gate structure exemplified in this embodiment is preferable because the manufacturing process can be reduced. Further, by using amorphous silicon at this time, it can be formed at a lower temperature than polycrystalline silicon, so that it is possible to use a material having low heat resistance as an electrode material and a substrate material for the wiring below the semiconductor layer. , The range of material choices can be expanded. For example, a glass substrate having an extremely large area can be preferably used. On the other hand, the top gate type transistor is preferable because it is easy to form an impurity region in a self-aligned manner and it is possible to reduce variations in characteristics. At this time, it is particularly suitable when polycrystalline silicon, single crystal silicon, or the like is used.

[Conductive layer]
Materials that can be used for conductive layers such as transistor gates, sources and drains, as well as various wiring and electrodes that make up display devices include aluminum, titanium, chromium, nickel, copper, ittrium, zirconium, molybdenum, and silver. Examples include tantalum, a metal such as tungsten, or an alloy containing this as a main component. Further, a film containing these materials can be used as a single layer or as a laminated structure. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, and a copper film on a copper-magnesium-aluminum alloy film. A two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or a titanium nitride film, and an aluminum film or a copper film layered on top of the titanium film or a titanium nitride film. A three-layer structure, a molybdenum film or a molybdenum nitride film, on which a titanium film or a titanium nitride film is formed, and an aluminum film or a copper film laminated on the aluminum film or a copper film, and then a molybdenum film or a molybdenum film or There is a three-layer structure that forms a molybdenum nitride film. Oxides such as indium oxide, tin oxide, and zinc oxide may be used. Further, it is preferable to use copper containing manganese because the controllability of the shape by etching is improved.

Further, as the translucent conductive material, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide to which gallium is added, or graphene can be used. Alternatively, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (for example, titanium nitride) may be used. When a metal material or an alloy material (or a nitride thereof) is used, it may be made thin enough to have translucency. Further, the laminated film of the above material can be used as the conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and an indium tin oxide because the conductivity can be enhanced. These can also be used for a conductive layer such as various wirings and electrodes constituting a display device, and a conductive layer (a conductive layer that functions as a pixel electrode or a common electrode) of a display element.

[Insulation layer]
Examples of the insulating material that can be used for each insulating layer include resins such as acrylic and epoxy, resins having a siloxane bond, and inorganic insulation such as silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, and aluminum oxide. Materials can also be used.

Further, it is preferable that the light emitting element is provided between a pair of insulating films having low water permeability. As a result, impurities such as water can be suppressed from entering the light emitting element, and deterioration of the reliability of the device can be suppressed.

Examples of the insulating film having low water permeability include a film containing nitrogen and silicon such as a silicon nitride film and a silicon nitride film, and a film containing nitrogen and aluminum such as an aluminum nitride film. Further, a silicon oxide film, a silicon nitride film, an aluminum oxide film and the like may be used.

For example, the amount of water vapor permeation of an insulating film having low water permeability is 1 × ^10-5 [g / ( ^m2 · day)].
Hereinafter, preferably 1 × 10 ^-6 [g / (m ² · day)] or less, more preferably 1 × 10
^-7 [g / (m ² · day)] or less, more preferably 1 × 10 ^-8 [g / (m ² · da)]
y)] The following.

[Liquid crystal element]
As the liquid crystal element, for example, a liquid crystal element to which a vertical alignment (VA: Vertical Alignment) mode is applied can be used. The vertical orientation mode is MVA (M).
ultimate-Domain Vertical Element) mode, PVA (P)
attached Vertical Alignment mode, ASV (Adva)
The nced Super View) mode and the like can be used.

Further, as the liquid crystal element, a liquid crystal element to which various modes are applied can be used. For example, in addition to VA mode, TN (Twisted Nematic) mode, IPS (In-
Plane-Switching mode, FFS (Fringe Field Swi)
ticking) mode, ASM (Axially Symmetrically aligned)
Micro-cell mode, OCB (Optically Compensate)
d Birefringence) mode, FLC (Ferroelectric Li)
Kid Crystal) mode, AFLC (AntiFerolectric)
A liquid crystal element to which a Liquid Crystal) mode or the like is applied can be used.

The liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of the liquid crystal. The optical modulation action of the liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field). The liquid crystal used for the liquid crystal element includes a thermotropic liquid crystal, a low molecular weight liquid crystal, a polymer liquid crystal, and a polymer dispersed liquid crystal (PDLC:).
Polymer Dispersed Liquid Crystal), ferroelectric liquid crystal, antiferroelectric liquid crystal and the like can be used. These liquid crystal materials show a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase and the like depending on the conditions.

Further, as the liquid crystal material, either a positive type liquid crystal or a negative type liquid crystal may be used.
The optimum liquid crystal material may be used according to the applicable mode and design.

Further, in order to control the orientation of the liquid crystal, an alignment film can be provided. When the transverse electric field method is adopted, a liquid crystal showing a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases, and is a phase that appears immediately before the transition from the cholesteric phase to the isotropic phase when the temperature of the cholesteric liquid crystal is raised. Since the blue phase is expressed only in a narrow temperature range, a liquid crystal composition mixed with a chiral agent of several weight% or more is used for the liquid crystal layer in order to improve the temperature range.
A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response rate and is optically isotropic. Further, the liquid crystal composition containing the liquid crystal showing the blue phase and the chiral agent does not require an orientation treatment and has a small viewing angle dependence. In addition, since it is not necessary to provide an alignment film, the rubbing process is not required, so that electrostatic breakdown caused by the rubbing process can be prevented, and defects and breakage of the liquid crystal display device during the manufacturing process can be reduced. ..

Further, as the liquid crystal element, a transmissive liquid crystal element, a reflective liquid crystal element, a semi-transmissive liquid crystal element, or the like can be used.

In one aspect of the present invention, a reflective liquid crystal element can be used in particular.

When a transmissive or semi-transmissive liquid crystal element is used, two polarizing plates are provided so as to sandwich the pair of substrates. In addition, a backlight is provided outside the polarizing plate. The backlight may be a direct type backlight or an edge light type backlight.
It is preferable to use a direct-type backlight equipped with an LED (Light Lighting Diode) because local dimming can be facilitated and contrast can be increased. Further, it is preferable to use an edge light type backlight because the thickness of the module including the backlight can be reduced.
Therefore, it is preferable.

When a reflective liquid crystal element is used, a polarizing plate is provided on the display surface side. Separately from this, it is preferable to arrange the light diffusing plate on the display surface side because the visibility can be improved.

Further, when a reflective type or semi-transmissive type liquid crystal element is used, a front light may be provided outside the polarizing plate. As the front light, it is preferable to use an edge light type front light. It is preferable to use a front light provided with an LED (Light Lighting Diode) because power consumption can be reduced.

[Adhesive layer]
As the adhesive layer, various curable adhesives such as a photocurable adhesive such as an ultraviolet curable adhesive, a reaction curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EV.
A (ethylene vinyl acetate) resin and the like can be mentioned. In particular, a material having low moisture permeability such as an epoxy resin is preferable. Further, a two-component mixed type resin may be used. Further, an adhesive sheet or the like may be used.

Further, the resin may contain a desiccant. For example, a substance that adsorbs water by chemical adsorption, such as an oxide of an alkaline earth metal (calcium oxide, barium oxide, etc.), can be used. Alternatively, a substance that adsorbs water by physical adsorption, such as zeolite or silica gel, may be used. It is preferable that a desiccant is contained because impurities such as moisture can be suppressed from entering the element and the reliability of the display panel is improved.

Further, by mixing the resin with a filler having a high refractive index or a light scattering member, the light extraction efficiency can be improved. For example, titanium oxide, barium oxide, zeolite, zirconium and the like can be used.

[Colored layer]
Examples of the material that can be used for the colored layer include a metal material, a resin material, a resin material containing a pigment or a dye, and the like. As the color element, red, green, blue and the like can be used. Further, cyan, magenta, yellow (yellow) and the like may be used. To transmit only the light of the colored color means that the light transmitted in the colored layer has a peak at the wavelength of the chromatic light.

[Shading layer]
Examples of the material that can be used as the light-shielding layer include carbon black, titanium black, metal, metal oxide, and a composite oxide containing a solid solution of a plurality of metal oxides. The light-shielding layer may be a film containing a resin material or a thin film of an inorganic material such as metal. Further, as the light-shielding layer, a laminated film of a film containing a material of a colored layer can also be used. For example, a laminated structure of a film containing a material used for a colored layer that transmits light of a certain color and a film containing a material used for a colored layer that transmits light of another color can be used. By using the same material for the colored layer and the light-shielding layer,
It is preferable because the equipment can be shared and the process can be simplified.

〔Structure〕
The first structure 124 and the second structure 126 have at least a material that allows light to pass through. Further, a reflective material may be applied to the reflective film 124R of the first structure 124. A reflective film may also be provided on the second structure 126.

[Light extraction unit]
As the light extraction unit 122R, a minute lens-like structure such as a microlens can be used. A material that transmits visible light can be used for the light extraction unit 122R. Alternatively, a material having a refractive index of 1.3 or more and 2.5 or less can be used for the light extraction unit 122R. For example, an inorganic material or an organic material can be preferably used.

Specifically, the light extraction unit 122R is provided with cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin, or indium and gallium. And oxides containing zinc and the like can be used. Alternatively, zinc sulfide or the like may be used.

Alternatively, a material containing a resin can be used for the light extraction unit 122R. Specifically, a resin into which chlorine, bromine or iodine is introduced, a resin into which a heavy metal atom is introduced, a resin into which an aromatic ring is introduced, a resin into which sulfur is introduced, and the like can be used. Alternatively, a resin containing nanoparticles of a resin and a material having a higher refractive index than the resin can be used. Titanium oxide, zirconium oxide, or the like can be used for the nanoparticles.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

(Embodiment 4)
In this embodiment, an example of a transistor that can be used in place of each of the transistors shown in the above embodiment will be described with reference to the drawings.

The display device of one aspect of the present invention can be manufactured by using various types of transistors such as a bottom gate type transistor and a top gate type transistor. Therefore, the material of the semiconductor layer and the transistor structure to be used can be easily replaced according to the existing production line.

[Bottom gate type transistor]
FIG. 22 (A1) is a cross-sectional view of a channel protection type transistor 810 which is a kind of bottom gate type transistor. In FIG. 22 (A1), the transistor 810 is a substrate 77.
It is formed on 1. Further, the transistor 810 has an electrode 746 on the substrate 771 via an insulating layer 772. Further, the semiconductor layer 742 is provided on the electrode 746 via the insulating layer 726. The electrode 746 can function as a gate electrode. The insulating layer 726 can function as a gate insulating layer.

Further, the insulating layer 741 is provided on the channel forming region of the semiconductor layer 742. Further, the semiconductor layer 7
The electrode 744a and the electrode 744b are provided on the insulating layer 726 in contact with a part of the 42. The electrode 744a can function as either a source electrode or a drain electrode. The electrode 744b is
It can function as the other of the source and drain electrodes. A part of the electrode 744a and a part of the electrode 744b are formed on the insulating layer 741.

The insulating layer 741 can function as a channel protection layer. Insulation layer 741 on the channel formation region
By providing the above, it is possible to prevent the exposure of the semiconductor layer 742 that occurs when the electrodes 744a and 744b are formed. Therefore, it is possible to prevent the channel formation region of the semiconductor layer 742 from being etched when the electrodes 744a and 744b are formed. According to one aspect of the present invention, a transistor having good electrical characteristics can be realized.

Further, the transistor 810 has an insulating layer 728 on the electrodes 744a, 744b and the insulating layer 741, and has an insulating layer 729 on the insulating layer 728.

When an oxide semiconductor is used for the semiconductor layer 742, a material capable of depriving a part of the semiconductor layer 742 of oxygen and causing oxygen deficiency is used at least in the portions of the electrodes 724a and 724b in contact with the semiconductor layer 742. Is preferable. The carrier concentration increases in the region where oxygen deficiency occurs in the semiconductor layer 742, and the region becomes n-type and becomes an n-type region (n ⁺ layer).
Therefore, the region can function as a source region or a drain region. When an oxide semiconductor is used for the semiconductor layer 742, tungsten, titanium and the like can be mentioned as an example of a material capable of depriving the semiconductor layer 742 of oxygen and causing oxygen deficiency.

By forming the source region and the drain region on the semiconductor layer 742, the electrode 724a
And the contact resistance between the electrode 724b and the semiconductor layer 742 can be reduced. Therefore, it is possible to improve the electrical characteristics of the transistor such as the field effect mobility and the threshold voltage.

When a semiconductor such as silicon is used for the semiconductor layer 742, the semiconductor layer 742 and the electrode 724a
It is preferable to provide a layer that functions as an n-type semiconductor or a p-type semiconductor between the semiconductor layer 742 and the electrode 724b. The layer that functions as an n-type semiconductor or p-type semiconductor is
It can function as the source or drain region of the transistor.

The insulating layer 729 is preferably formed by using a material having a function of preventing or reducing the diffusion of impurities from the outside to the transistor. The insulating layer 729 may be omitted if necessary.

The transistor 811 shown in FIG. 22 (A2) differs from the transistor 810 in that the insulating layer 729 has an electrode 723 that can function as a back gate electrode. The electrode 723 can be formed by the same material and method as the electrode 746.

Generally, the back gate electrode is formed of a conductive layer, and is arranged so as to sandwich the channel forming region of the semiconductor layer between the gate electrode and the back gate electrode. Therefore, the back gate electrode can function in the same manner as the gate electrode. The potential of the back gate electrode may be the same potential as that of the gate electrode, may be a ground potential (GND potential), or may be an arbitrary potential. Further, the threshold voltage of the transistor can be changed by changing the potential of the back gate electrode independently without interlocking with the gate electrode.

Both the electrode 746 and the electrode 723 can function as gate electrodes. Therefore, the insulating layer 726, the insulating layer 729, the insulating layer 728, and the insulating layer 729 can each function as a gate insulating layer. The electrodes 723 have an insulating layer 728 and an insulating layer 7.
It may be provided between 29.

When one of the electrode 746 or the electrode 723 is referred to as a "gate electrode", the other is referred to as a "back gate electrode". For example, in the transistor 811, when the electrode 723 is referred to as a "gate electrode", the electrode 746 is referred to as a "back gate electrode". When the electrode 723 is used as a "gate electrode", the transistor 811 can be considered as a kind of top gate type transistor. Further, either the electrode 746 or the electrode 723 is designated as "first.
The other may be referred to as a "second gate electrode".

By providing the electrode 746 and the electrode 723 with the semiconductor layer 742 interposed therebetween, the electrode 74 is further provided.
By setting the potentials of 6 and the electrode 723 at the same potential, the region where the carriers flow in the semiconductor layer 742 becomes larger in the film thickness direction, so that the amount of carrier movement increases. As a result, the on-current of the transistor 811 becomes large, and the field effect mobility becomes high.

Therefore, the transistor 811 is a transistor having a large on-current with respect to the occupied area. That is, the occupied area of the transistor 811 can be reduced with respect to the required on-current. According to one aspect of the present invention, the occupied area of the transistor can be reduced. Therefore, according to one aspect of the present invention, a semiconductor device having a high degree of integration can be realized.

Further, since the gate electrode and the back gate electrode are formed of a conductive layer, it has a function of preventing an electric field generated outside the transistor from acting on the semiconductor layer on which a channel is formed (particularly, an electric field shielding function against static electricity). .. By forming the back gate electrode larger than the semiconductor layer and covering the semiconductor layer with the back gate electrode, the electric field shielding function can be enhanced.

Further, by forming the back gate electrode with a conductive film having a light-shielding property, it is possible to prevent light from being incident on the semiconductor layer from the back gate electrode side. Therefore, it is possible to prevent photodegradation of the semiconductor layer and prevent deterioration of electrical characteristics such as a shift of the threshold voltage of the transistor.

According to one aspect of the present invention, a transistor with good reliability can be realized. again,
It is possible to realize a semiconductor device with good reliability.

FIG. 22 (B1) shows a cross-sectional view of a channel protection type transistor 820, which is one of the bottom gate type transistors. The transistor 820 has almost the same structure as the transistor 810, except that the insulating layer 741 covers the end portion of the semiconductor layer 742. Further, the semiconductor layer 742 and the electrode 744a are electrically connected to each other in the opening formed by selectively removing a part of the insulating layer 729 overlapping the semiconductor layer 742. Further, in another opening formed by selectively removing a part of the insulating layer 729 overlapping with the semiconductor layer 742, the semiconductor layer 7 is formed.
The 42 and the electrode 744b are electrically connected to each other. The region of the insulating layer 729 that overlaps the channel forming region can function as a channel protection layer.

The transistor 821 shown in FIG. 22 (B2) differs from the transistor 820 in that the insulating layer 729 has an electrode 723 that can function as a back gate electrode.

By providing the insulating layer 729, it is possible to prevent the semiconductor layer 742 from being exposed when the electrodes 744a and 744b are formed. Therefore, it is possible to prevent the semiconductor layer 742 from being thinned when the electrodes 744a and 744b are formed.

Further, the transistor 820 and the transistor 821 have a distance between the electrode 744a and the electrode 746 and the electrode 744b and the electrode 7 more than the transistor 810 and the transistor 811.
The distance between 46 becomes longer. Therefore, the parasitic capacitance generated between the electrode 744a and the electrode 746 can be reduced. In addition, the parasitic capacitance generated between the electrode 744b and the electrode 746 can be reduced. According to one aspect of the present invention, a transistor having good electrical characteristics can be realized.

The transistor 825 shown in FIG. 22 (C1) is a channel etching type transistor which is one of the bottom gate type transistors. The transistor 825 forms the electrodes 744a and 744b without using the insulating layer 729. Therefore, a part of the semiconductor layer 742 exposed at the time of forming the electrode 744a and the electrode 744b may be etched. On the other hand, since the insulating layer 729 is not provided, the productivity of the transistor can be improved.

The transistor 825 shown in FIG. 22 (C2) differs from the transistor 820 in that the insulating layer 729 has an electrode 723 that can function as a back gate electrode.

[Top gate type transistor]
FIG. 23 (A1) shows a cross-sectional view of a transistor 830 which is a kind of top gate type transistor. The transistor 830 has a semiconductor layer 742 on the insulating layer 772, and has an electrode 744a in contact with a part of the semiconductor layer 742 and an electrode 744b in contact with a part of the semiconductor layer 742 on the semiconductor layer 742 and the insulating layer 772. It has an insulating layer 726 on a semiconductor layer 742, an electrode 744a, and an electrode 744b, and an electrode 746 on an insulating layer 726.

Since the transistor 830 does not overlap the electrodes 746 and 744a, and the electrodes 746 and 744b, the parasitic capacitance generated between the electrodes 746 and 744a and the parasitic capacitance generated between the electrodes 746 and 744b are reduced. be able to. Further, by introducing the impurity 755 into the semiconductor layer 742 by using the electrode 746 as a mask after forming the electrode 746, it is possible to form an impurity region in the semiconductor layer 742 in a self-alignment manner (self-alignment). See FIG. 22 (A3)). According to one aspect of the present invention, a transistor having good electrical characteristics can be realized.

The impurity 755 can be introduced by using an ion implantation device, an ion doping device, or a plasma processing device.

As the impurity 755, for example, at least one kind of element among the group 13 element or the group 15 element can be used. When an oxide semiconductor is used for the semiconductor layer 742, at least one element among rare gas, hydrogen, and nitrogen can be used as the impurity 755.

The transistor 831 shown in FIG. 23 (A2) is different from the transistor 830 in that it has an electrode 723 and an insulating layer 727. The transistor 831 has an electrode 723 formed on the insulating layer 772 and has an insulating layer 727 formed on the electrode 723. The electrode 723 can function as a backgate electrode. Therefore, the insulating layer 727 can function as a gate insulating layer. The insulating layer 727 can be formed by the same material and method as the insulating layer 726.

Like the transistor 811, the transistor 831 is a transistor having a large on-current with respect to the occupied area. That is, for the required on-current, the transistor 8
The occupied area of 31 can be reduced. According to one aspect of the present invention, the occupied area of the transistor can be reduced. Therefore, according to one aspect of the present invention, a semiconductor device having a high degree of integration can be realized.

The transistor 840 exemplified in FIG. 23 (B1) is one of the top gate type transistors. The transistor 840 differs from the transistor 830 in that the semiconductor layer 742 is formed after the electrodes 744a and 744b are formed. Further, the transistor 841 exemplified in FIG. 23 (B2) has an electrode 723 and an insulating layer 727 in that the transistor 8 is provided.
Different from 40. In the transistor 840 and the transistor 841, the semiconductor layer 742
A part of the semiconductor layer 742 is formed on the electrode 744a, and another part of the semiconductor layer 742 is formed on the electrode 744b.

Like the transistor 811, the transistor 841 is a transistor having a large on-current with respect to the occupied area. That is, for the required on-current, the transistor 8
The occupied area of 41 can be reduced. According to one aspect of the present invention, the occupied area of the transistor can be reduced. Therefore, according to one aspect of the present invention, a semiconductor device having a high degree of integration can be realized.

The transistor 842 exemplified in FIG. 24 (A1) is one of the top gate type transistors. The transistor 842 has the electrode 744a and the electrode 7 after forming the insulating layer 729.
It differs from the transistor 830 and the transistor 840 in that it forms 44b. Electrode 744a
And the electrode 744b is electrically connected to the semiconductor layer 742 at the openings formed in the insulating layer 728 and the insulating layer 729.

Further, by removing a part of the insulating layer 726 that does not overlap with the electrode 746 and introducing the impurity 755 into the semiconductor layer 742 by using the electrode 746 and the remaining insulating layer 726 as a mask, self-alignment (self-alignment) (in the semiconductor layer 742). Impurity regions can be formed in a self-alignment manner (see FIG. 23 (A3)). Transistor 842 has a region where the insulating layer 726 extends beyond the end of the electrode 746. When introducing the impurity 755 into the semiconductor layer 742, the semiconductor layer 742
The impurity concentration in the region where the impurity 755 is introduced through the insulating layer 726 is smaller than that in the region where the impurity 755 is introduced without passing through the insulating layer 726. Therefore, an LDD (Lightly Doped Drain) region is formed in the region of the semiconductor layer 742 adjacent to the electrode 746.

In the transistor 843 shown in FIG. 24 (A2), the point having the electrode 723 is the transistor 84.
Different from 2. The transistor 843 has an electrode 723 formed on the substrate 771 and overlaps with the semiconductor layer 742 via the insulating layer 772. The electrode 723 can function as a backgate electrode.

Further, as in the transistor 844 shown in FIG. 24 (B1) and the transistor 845 shown in FIG. 24 (B2), the insulating layer 726 in the region not overlapping with the electrode 746 may be completely removed.
Further, the insulating layer 726 may be left as in the transistor 846 shown in FIG. 24 (C1) and the transistor 847 shown in FIG. 24 (C2).

Transistors 842 to 847 also have electrodes 746 after forming electrodes 746.
Is introduced into the semiconductor layer 742 by using the above as a mask to introduce the impurity 755 into the semiconductor layer 742.
Impurity regions can be formed in a self-aligned manner. According to one aspect of the present invention, a transistor having good electrical characteristics can be realized. Further, according to one aspect of the present invention, a semiconductor device having a high degree of integration can be realized.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

(Embodiment 5)
In this embodiment, a display module that can be manufactured by using one aspect of the present invention will be described.

The display module 6000 shown in FIG. 25 (A) has an upper cover 6001 and a lower cover 600.
It has a display panel 6006, a frame 6009, a printed circuit board 6010, and a battery 6011 connected to the FPC 6005.

For example, a display device manufactured using one aspect of the present invention can be used for the display panel 6006. As a result, the display module can be manufactured with a high yield.

The shape and dimensions of the upper cover 6001 and the lower cover 6002 can be appropriately changed according to the size of the display panel 6006.

Further, the display panel 6006 is provided with an input device according to an aspect of the present invention.

In addition to the protective function of the display panel 6006, the frame 6009 has a function as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed circuit board 6010. Further, the frame 6009 may have a function as a heat sink.

The printed circuit board 6010 has a power supply circuit, a signal processing circuit for outputting a video signal and a clock signal. The power source for supplying electric power to the power supply circuit may be an external commercial power source or a power source provided by a separately provided battery 6011. The battery 6011 can be omitted when a commercial power source is used.

Further, the display module 6000 may be additionally provided with members such as a polarizing plate, a retardation plate, and a prism sheet.

FIG. 25B is a schematic cross-sectional view of the display module 6000 including an optical touch sensor.

The display module 6000 has a light emitting unit 6015 and a light receiving unit 6016 provided on the printed circuit board 6010. Further, the area surrounded by the upper cover 6001 and the lower cover 6002 has a pair of light guides (light guide 6017a, light guide 6017b).

For the upper cover 6001 and the lower cover 6002, for example, plastic or the like can be used. Further, the upper cover 6001 and the lower cover 6002 are thin (for example, 0.5).
It is possible to make mm or more and 5 mm or less). Therefore, the display module 6000 can be made extremely lightweight. Also, with less material, the upper cover 6001 and the lower cover 60
Since 02 can be manufactured, the manufacturing cost can be reduced.

The display panel 6006 is provided so as to be overlapped with the printed circuit board 6010 and the battery 6011 with the frame 6009 interposed therebetween. The display panel 6006 and the frame 6009 have a light guide unit 6.
It is fixed to 017a and the light guide unit 6017b.

The light 6018 emitted from the light emitting unit 6015 is displayed by the light guide unit 6017a on the display panel 600.
It passes through the upper part of No. 6 and reaches the light receiving unit 6016 through the light guide unit 6017b. For example, the light 6018 is blocked by a detected object such as a finger or a stylus, so that the touch operation can be detected.

A plurality of light emitting units 6015 are provided, for example, along two adjacent sides of the display panel 6006.
A plurality of light receiving units 6016 are provided at positions facing each other with the light emitting unit 6015 and the display panel 6006 interposed therebetween. As a result, it is possible to acquire information on the position where the touch operation has been performed.

As the light emitting unit 6015, a light source such as an LED element can be used. In particular, the light emitting unit 6
As 015, it is preferable to use a light source that emits infrared rays that are not visible to the user and are harmless to the user.

As the light receiving unit 6016, a photoelectric element that receives the light emitted by the light emitting unit 6015 and converts it into an electric signal can be used. Preferably, a photodiode capable of receiving infrared rays can be used.

As the light guide unit 6017a and the light guide unit 6017b, at least a member that transmits light 6018 can be used. By using the light guide unit 6017a and the light guide unit 6017b, the light emitting unit 6015 and the light receiving unit 6016 can be arranged under the display panel 6006, and the external light reaches the light receiving unit 6016 and the touch sensor malfunctions. Can be suppressed. In particular, it is preferable to use a resin that absorbs visible light and transmits infrared rays. As a result, the malfunction of the touch sensor can be suppressed more effectively.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

(Embodiment 6)
As an electronic device that can use the display system according to one aspect of the present invention, a display device, a personal computer, an image storage device or an image reproduction device provided with a recording medium, a mobile phone, etc.
Game consoles including portable types, portable data terminals, electronic book terminals, video cameras, cameras such as digital still cameras, goggle type displays (head-mounted displays), navigation systems, sound playback devices (car audio, digital audio players, etc.),
Copiers, facsimiles, printers, multifunction printers, automated teller machines (ATMs)
, Vending machines, etc. Specific examples of these electronic devices are shown in FIG.

FIG. 26A shows a television, which is a housing 971, a display unit 973, an operation key 974, and a speaker 9.
It has 75, a communication connection terminal 976, an optical sensor 977, and the like. A touch sensor is provided on the display unit 973, and an input operation can be performed. By using the display device of one aspect of the present invention for the display unit 973, the power consumption can be reduced.

FIG. 26B is an information processing terminal, which includes a housing 901, a display unit 902, a display unit 903, a sensor 904, and the like. The display unit 902 and the display unit 903 are composed of one display panel and have flexibility. Further, the housing 901 also has flexibility and can be used by being bent as shown in the figure, or can be used in a flat plate shape like a tablet terminal. Sensor 90
4 can sense the shape of the housing 901, for example, the display unit 9 when the housing is bent.
The display of 02 and the display unit 903 can be switched. Display unit 902 and display unit 9
By using the display device of one aspect of the present invention in 03, the power consumption can be reduced.

FIG. 26C shows a digital camera, which includes a housing 961, a shutter button 962, and a microphone 9.
It has 63, a speaker 967, a display unit 965, an operation key, and the like. By using the display system of one aspect of the present invention for the display unit 965, the power consumption can be reduced.

FIG. 26 (D) is a wristwatch-type information terminal, which includes a housing 931, a display unit 932, and a wristband 9.
It has 33, a button for operation 935, a crown 936, a camera 939, and the like. The display unit 932 may be a touch panel. By using the display device of one aspect of the present invention for the display unit 932, the power consumption can be reduced.

FIG. 26 (E) is an example of a mobile phone, which includes a housing 951, a display unit 952, and an operation button 953.
It has an external connection port 954, a speaker 955, a microphone 956, a camera 957, and the like. The mobile phone includes a touch sensor on the display unit 952. All operations such as making a phone call or inputting characters can be performed by touching the display unit 952 with a finger or a stylus. By using the display device of one aspect of the present invention for the display unit 952, the power consumption can be reduced.

FIG. 26F is a portable data terminal, which includes a housing 911, a display unit 912, a camera 919, and the like. Information can be input / output by the touch panel function of the display unit 912.
By using the display device of one aspect of the present invention for the display unit 932, the power consumption can be reduced.

27 (A), (B), and (C) show foldable electronic devices, respectively.

The electronic device 920 shown in FIG. 27 (A) has a housing 921a, a housing 921b, a hinge 923, a display unit 922, and the like. The display unit 922 is incorporated in the housing 921 and the housing 921b.

The housing 921a and the housing 921b are rotatably connected by a hinge 923. The electronic device 920 can be transformed into a state in which the housing 921a and the housing 921b are closed and a state in which the housing 921b is opened as shown in FIG. 27 (A). As a result, it is excellent in portability when it is carried, and it is excellent in visibility due to the large display area when it is used.

Further, it is preferable that the hinge 923 has a locking mechanism so that when the housing 921a and the housing 921b are opened, these angles do not become larger than a predetermined angle. For example, the angle at which the lock is applied (does not open any further) is preferably 90 degrees or more and less than 180 degrees, typically 90 degrees, 120 degrees, 135 degrees, or 150 degrees, 175 degrees, and the like. be able to. This can enhance convenience, safety, and reliability.

The display unit 922 functions as a touch panel and can be operated with a finger, a stylus, or the like.

A wireless communication module is provided in either the housing 921a or the housing 921b, and the Internet, LAN (Local Area Network), and Wi-Fi (Wir) are provided.
Through a computer network such as eless Fidelity (registered trademark)
It is possible to send and receive data.

It is preferable that the display unit 922 is composed of one flexible display.
As a result, continuous display without interruption between the housing 921a and the housing 901b can be performed. A display may be provided in each of the housing 921a and the housing 921b.

FIG. 27B shows an electronic device 940 that functions as a portable game machine. The electronic device 940 has a housing 941a, a housing 941b, a display unit 942, a hinge 943, an operation button 944a, an operation button 944b, and the like.

Further, the cartridge 945 can be inserted into the housing 941b. Cartridge 9
In the 45, application software such as a game is stored, and the cartridge 9 is stored.
By replacing 45, various applications can be executed on the electronic device 940.

Further, in FIG. 27B, the size of the portion of the display unit 912 overlapping with the housing 941a and the housing 9 are shown.
An example is shown in which the sizes of the portions overlapping with 41b are different from each other. Specifically, a part of the display unit 942 provided in the housing 941a is larger than a part of the display unit 942 overlapping with the housing 941b provided with the operation button 944a and the operation button 944b. For example, display unit 94
Each display unit can be used properly, such as displaying a main screen on the housing 941a side of 2 and displaying an operation screen on the housing 941b side.

The electronic device 980 shown in FIG. 27C is provided with a flexible display unit 982 over a housing 981a and a housing 981b connected by a hinge 983.

In FIG. 27C, when the housing 981a and the housing 981b are opened, the display unit 982 is held in a greatly curved shape. For example, the display unit 982 can be held in a state where the radius of curvature is 1 mm or more and 50 mm or less, preferably 5 mm or more and 30 mm or less. Pixels are continuously arranged in a part of the display unit 982 from the housing 981a to the housing 981b, and a curved surface can be displayed.

Since the hinge 983 has the above-mentioned locking mechanism, it is possible to prevent the display unit 982 from being damaged without applying an excessive force to the display unit 982. Therefore, a highly reliable electronic device can be realized.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

10 Display device 11 Substrate 12 Substrate 13 Antireflection layer 13a Dielectric layer 13b Dielectric layer 13c Anti-glare pattern 13d Film 20 Layer 21 Element layer 21a FET layer 21b Layer 21c Layer 22 Substrate 23 Light diffusing plate 24a Polarizing plate 24b Polarizing plate 25 Input Device 26 Adhesive layer 30 Drive circuit 30a Drive circuit 30b Drive circuit 31 FPC
31B Display element 31G Display element 32 FPC
32B display element 32G display element 32R display element 33a wiring 33b wiring 33c wiring 33d wiring 35 liquid crystal element 35tr optical 36 pixel circuit 40 pixel array 45 pixel unit 46 pixel 46B display element 46G display element 46R display element 46W display element 47 pixel 47B display element 47G display element 47R display element 55r light 55t light 55tr light 100A display device 100B display device 100C display device 101 area 102 area 103 substrate 104 substrate 105 liquid crystal element 105CE electrode 105LC liquid crystal layer 105PE electrode 106 insulating film 108 liquid crystal element 108CE electrode 108LC liquid crystal layer 108PE Electrode 110 Element layer 111 Transistor 112 Transistor 114 Opening 116 Electrode 118 Opening 120 Plate plate 122 Light emitting device 122E Edge light 122G Light guide plate 122R Part 124 Structure 124R Reflective film 126 Structure 128 Light diffuser 130 Input device 132 Polarized Plate 134 Insulation layer 136 Colored layer 138 Colored layer 140 Colored layer 141 Adhesive layer 142 Resin layer 410 Pixels 501B Insulation film 510 Display panel 511 Board 512 Board 514 Display unit 516 Circuit 518 Wiring 520 IC
522 FPC
524 Transistor 526 Opening 550 Liquid crystal element 560 Substrate 570 Liquid crystal element 571 Insulation film 571 Insulation film 575 Proximity sensor 576 Opening 723 Electron 724a Electrode 724b Electrode 726 Insulation layer 727 Insulation layer 728 Insulation layer 729 Insulation layer 741 Insulation layer 742 Electrode 744b Electrode 746 Electrode 755 Impurity 771 Substrate 772 Insulation layer 800 Display device 801 Display unit 810 Transistor 811 Transistor 820 Transistor 821 Transistor 825 Transistor 830 Transistor 831 Transistor 840 Transistor 841 Transistor 842 Transistor 843 Transistor 844 Transistor 845 Transistor 845 851 Opening 860 Liquid crystal element 860b Liquid crystal element 860g Liquid crystal element 860r Liquid crystal element 861 Electrode 870 Liquid crystal element 901 Housing 901b Housing 902 Display unit 903 Display unit 904 Sensor 911 Housing 912 Display unit 919 Camera 920 Electronic device 921 Housing 921a Housing 921b Housing 922 Display 923 Hing 931 Transistor 93 Display 933 Wristband 935 Button 936 Crown 939 Camera 940 Electronic device 941a Housing 941b Housing 942 Display 943 Hing 944a Operation button 944b Operation button 945 Cartridge 951 Housing 952 Display Part 953 Operation button 954 External connection port 955 Speaker 956 Microphone 957 Camera 961 Housing 962 Shutter button 963 Microphone 965 Display unit 967 Speaker 971 Housing 973 Display unit 974 Operation key 975 Speaker 976 Communication connection terminal 977 Optical sensor 980 Electronic device 981a Housing 981b Housing 982 Display 983 Hinge 6000 Display module 6001 Top cover 6002 Bottom cover 6005 FPC
6006 Display panel 6009 Frame 6010 Printed circuit board 6011 Battery 6015 Light emitting part 6016 Light receiving part 6017a Light guide part 6017b Light guide part 6018 Light

Claims (2)

A display device having a first board, a second board, a display element, an input device, and a drive circuit.
The display element is provided between the first surface of the first substrate and the first surface of the second substrate.
The display element is
The first transistor on the first substrate and
A first display element located on the first transistor and including a first pixel electrode layer, a first liquid crystal display, and a first counter electrode layer.
The second transistor on the first display element and
It is located on the second transistor and has a second pixel electrode layer, a second liquid crystal display, and a second display element including a second counter electrode layer.
The first pixel electrode layer, the first liquid crystal display, and the first counter electrode layer are laminated in order from the bottom.
The second pixel electrode layer, the second liquid crystal display, and the second counter electrode layer are laminated in order from the bottom.
The second transistor is located between the first counter electrode layer and the second pixel electrode layer.
The first substrate, the first pixel electrode layer, the first counter electrode layer, and the second counter electrode layer have translucency.
The second pixel electrode layer has reflectivity and is
The input device is provided between the first surface of the second substrate and the display element.
The drive circuit is provided on the first surface of the first substrate.
The drive circuit includes a first circuit having a function of driving the display element and a second circuit having a function of driving the input device.
The second circuit is electrically connected to the input device via the FPC.
The first circuit is a display device that is electrically connected to the second circuit via wiring on the first surface of the first substrate. A display device having a first board, a second board, a display element, an input device, and a drive circuit.
The display element is provided between the first surface of the first substrate and the first surface of the second substrate.
The display element is
The first transistor on the first substrate and
A first display element located on the first transistor and including a first pixel electrode layer, a first liquid crystal display, and a first counter electrode layer.
The second transistor on the first display element and
It is located on the second transistor and has a second pixel electrode layer, a second liquid crystal display, and a second display element including a second counter electrode layer.
The first pixel electrode layer, the first liquid crystal display, and the first counter electrode layer are laminated in order from the bottom.
The second pixel electrode layer, the second liquid crystal display, and the second counter electrode layer are laminated in order from the bottom.
The second transistor is located between the first counter electrode layer and the second pixel electrode layer.
The first substrate, the first pixel electrode layer, the first counter electrode layer, and the second counter electrode layer have translucency.
The second pixel electrode layer has reflectivity and is
The input device is provided between the first surface of the second substrate and the display element.
The drive circuit is provided on the first surface of the first substrate.
The drive circuit includes a first circuit having a function of driving the display element and a second circuit having a function of driving the input device.
The second circuit is electrically connected to the input device via the first FPC.
The first circuit is electrically connected to the second FPC and is connected to the second FPC.
The second FPC has a function of transmitting a video signal to the first circuit.
A display device in which the first FPC and the second FPC are electrically connected by wiring on the first surface of the first substrate.

Images