JP7046670B2 - Chamfering system and truing equipment used for it - Google Patents

Description

The present invention particularly relates to a chamfering system having a plurality of wafer chamfering machines for chamfering various materials such as silicon, sapphire, compounds, and glass, particularly a wafer outer peripheral portion such as a semiconductor wafer and a glass panel, and a truing device used thereof. It is suitable for grinding by tilting the grindstone with respect to the plate-shaped workpiece.

In recent years, there has been a strong demand for improving the quality of wafers, and the processing state of the end face (edge portion) of the wafer has been regarded as important. Semiconductor wafers such as silicon wafers used for manufacturing semiconductor devices and the like are chamfered by grinding the edges and mirror chamfered by polishing in order to prevent chipping due to handling. That is, in the semiconductor manufacturing process, quality improvement of edge characteristics is an indispensable process from wafer manufacturing to device manufacturing.

Silicone is hard and brittle, and if the end face of the wafer remains sharp during slicing, it will easily crack or chip during handling such as transportation and alignment in the subsequent processing process, and the fragments will damage or contaminate the wafer surface. Or something. To prevent this, the end face of the cut wafer is chamfered with a diamond-coated chamfering wheel.

In addition, masking printing and sensor electrode formation are performed on a thin and lightweight glass substrate of smartphones and tablets, and then cutting is performed. In addition, the processing quality of chamfering, the roughness of the processed surface, the generation of microcracks, etc. directly affect the end face strength of the glass substrate.

Further, in normal grinding, the chamfered portion is ground in a state where the main surface of the wafer is perpendicular to the rotation axis of the resin grindstone, but in this case, grinding marks in the circumferential direction are likely to occur in the chamfered portion. Therefore, it is known to perform so-called helical grinding in which, for example, a resin bond grindstone (resin grindstone) is tilted with respect to the wafer to grind the chamfered portion of the wafer.

In particular, in order to improve the roughness accuracy of the chamfered surface and not reduce the polishing efficiency, in the chamfering method of the semiconductor wafer for polishing the peripheral edge of the semiconductor wafer, the rotation axis of the grindstone is tilted in the tangential direction of the outer periphery of the semiconductor wafer. It is known that by polishing the peripheral edge, the direction of movement of the abrasive grains of the grindstone is inclined with respect to the polished surface of the semiconductor wafer, which is described in Patent Documents 1 and 2.

In addition, when helical grinding is performed, not only the processing distortion of the chamfered portion is reduced as compared with normal grinding, but also the chamfered portion of the wafer and the grindstone are in surface contact, the contact area is increased, and the surface roughness of the chamfered portion is improved. The effect is obtained.

Wafer chamfering machines are used in mass production lines, but usually one wafer is used to process wafers stored in 2 to 12 cassettes. Therefore, one wafer chamfering machine can perform two wafer machining, and is often a biaxial chamfering machine provided with two rotation axes of a grinding wheel. Further, in an actual mass production line, a plurality of wafer chamfering machines are installed, and the grinding unit may be a chamfering processing system for processing up to 50 axes.

Further, there is a predetermined standard for the wafer to be chamfered by the wafer chamfering machine, and the wafer chamfering machine sets the processing conditions so as to meet the standard and chamfers the wafer. Normally, the outer shape of the chamfered wafer is measured to inspect whether the wafer is chamfered according to the standard.

Japanese Unexamined Patent Publication No. 5-152259 JP-A-2017-159421

In the above-mentioned prior art, those described in Patent Documents 1 and 2 perform growing of a grindstone for helical grinding in each wafer chamfering machine. That is, the cross-sectional shape of the master groove of the master grindstone is transferred to the cross-sectional shape of the outer peripheral portion of the turret provided in each waha chamfering machine, and the transferred turret is used to tilt the rotation axis in the tangential direction of the waha W. It forms a groove shape.

Therefore, when multiple wafer chamfering machines are installed, even if each machining condition is set accurately, the wafers of the same shape are not always chamfered in each wafer chamfering machine, and the grinding wheel is used. Strictly speaking, it may be processed into a different shape depending on the inclination of the rotating shaft, the degree of wear, the degree of supply of the grinding fluid, and the like.

Specifically, if the inclination angle of the rotation axis of the grinding wheel is different for each wafer chamfering machine, the symmetry of the cross-sectional shape of the wafer end face may be different. In order to prevent this, it is necessary to adjust the processing conditions of each wafer chamfering machine, particularly the rotation axis of the grinding wheel, in the inspection process after processing.
An object of the present invention is to solve the above-mentioned problems of the prior art, and when a plurality of wafer chamfering machines are installed, even if the processing conditions of each wafer chamfering machine, particularly the setting of the rotation axis of the grinding wheel, are different, each wafer is used. The shape accuracy of the wafer end face processed by the chamfering machine is set within a predetermined range, and the overall control is performed.

In particular, in helical grinding, the influence of the rotating shaft on the cross-sectional shape of the wafer end face is reduced, and even when a large number of chamfering processes are performed, uniform quality is maintained, adjustment steps are reduced, and high productivity is maintained. To do.

In order to achieve the above object, the present invention is a chamfering system having a plurality of waha chamfering machines for chamfering the outer peripheral portion of the waha using a grinding wheel, the waha chamfering line in which a plurality of the waha chamfering machines are installed, respectively. A waha shape measuring machine that measures the end face shape of the waha processed by the waha chamfering machine, a controller that determines whether or not the grinding wheel needs to be corrected from the values measured by the waha shape measuring machine, and a plurality of masters. A master grindstone provided with a groove is provided, and a grindstone processing machine capable of forming a grinding groove of the grinding wheel by the master groove is provided. The master groove is determined from the master groove, and the grindstone processing machine forms the grinding groove using the master groove determined by the controller.

Further, in the above, the controller converts the value measured by the wafer shape measuring machine into the grindstone shape data, and based on the difference between the grindstone shape data and the reference value, any one of the master grooves is used. It is desirable to make a master groove determination.

Further, in the above, the controller converts the value measured by the wafer shape measuring machine into the inter-axis difference data indicating the difference between the inclination of the rotation axis of the grinding wheel and the reference value, and converts it into the inter-axis difference data. Based on this, it is desirable to determine one of the master grooves from the plurality of master grooves.

Further, in the above, it is desirable that the grindstone processing machine can be commonly used by each of the wafer chamfering machines in the wafer chamfering line.

Further, in the above, the end face shape of the wafer is measured by the wafer shape measuring machine for all the wafer chamfering machines installed in the wafer chamfering line, the master groove is determined by the controller, and the grindstone is determined. It is desirable to form the grinding groove using the master groove determined by the processing machine.

Further, in the above, it is desirable to create a database of the master grooves determined for each of the wafer chamfering machines and store them in the controller.

Further, in the above, the end face shape of the wafer is measured by the wafer shape measuring machine for a predetermined time or for each predetermined number of processed wafers, the master groove is determined by the controller, and the grindstone processing machine is used. It is desirable to form the grinding groove using the master groove determined by.

Further, in the above, when the total number of processed wafers reaches a predetermined value on the wafer chamfering line, the shape of the end face of the wafer is measured by the wafer shape measuring machine, and the master groove is determined by the controller. It is desirable to form the grinding groove using the master groove determined by the grindstone processing machine.

Further, the present invention comprises a controller for determining whether or not the grinding wheel needs to be modified from a value obtained by measuring the end face shape of the waha in a growing device for forming a grinding groove by growing the grinding wheel for chamfering the waiha. A master grindstone provided with the master groove of the above is provided, and a grindstone processing machine capable of forming the grinding groove by the master groove is provided. Any of the master grooves is determined from the master groove, and the grindstone processing machine forms the grinding groove using the master groove determined by the controller.

Further, in the above, it is desirable to form the grinding groove by using the turret to which the shape of the master groove is transferred to the outer peripheral portion and the turret.

According to the present invention, a grindstone processing machine provided with a plurality of master grooves is provided with a controller that measures the end face shape of the wafer processed by each wafer chamfering machine and determines whether or not the grinding wheel needs to be corrected from the value. Determine one of the master grooves. Then, since the grinding groove of the grinding wheel is formed using the determined master groove, the shape accuracy of the wafer is within a predetermined range even if the setting of the rotation axis of the grinding wheel is different for each wafer chamfering machine. be able to. Therefore, even when a large number of chamfering processes are performed, uniform quality can be maintained, adjustment steps can be reduced, and high productivity can be maintained.

A block diagram showing the configuration of a chamfering system according to an embodiment of the present invention. Front view showing the main part of the wafer chamfering machine in one embodiment. Enlarged side view of the portion of the grinding wheel in one embodiment Cross-sectional view showing the relationship between the grinding wheel and the wafer W in one embodiment. Cross-sectional view showing the shape of the wafer W after processing in one embodiment. A flowchart showing a method of managing and correcting the shape accuracy of the wafer in the wafer chamfering line in one embodiment. Side view showing the operation of truing in one embodiment Sectional drawing of the master grindstone in one embodiment Sectional drawing which shows the master groove in one Embodiment A table showing the results of the trueing test as an example.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a block diagram showing a configuration of a chamfering processing system according to an embodiment of the present invention. Reference numeral 1 denotes a wafer chamfering line in which a plurality of wafer chamfering machines 10 are installed. The wafer chamfering line 1 is a wafer chamfering machine 10-1, 10-2, 10-3, etc., in which a grinding wheel 55 (FIG. 2) is provided as two axes, AB, CD, and EF, respectively. Reference numeral 2 denotes a wafer shape measuring machine, which is processed by a wafer chamfering machine 10-1, 10-2, 10-3, etc. to measure the end face shape of the wafer W.

Reference numeral 3 denotes a truing device, which has a controller 3-1 and a grindstone processing machine 3-2. The truthing device 3 inputs the result measured by the wafer shape measuring machine 2 and converts it as grindstone shape data. The master groove group 143 for determining whether or not the grinding wheel needs to be corrected by the controller 3-1 based on the converted grindstone shape data and correcting the grinding wheel 55 (FIG. 2) based on the difference between the grindstone shape data and the reference value. The master groove 143-1 ... Of any of (FIGS. 8 and 9) is determined. Using the determined master groove 143-1 ..., the grinding wheel 55 (FIG. 2) is trued by the grindstone processing machine 3-2 to form the grinding groove of the grinding wheel 55 (FIG. 2).

FIG. 2 is a front view showing a main part of the wafer chamfering machine. The wafer chamfering machine 10 is composed of a wafer feed unit 20, a grindstone rotating unit 50, a wafer supply / storage unit (not shown), a wafer cleaning / drying unit, a wafer transfer means, a controller for controlling the operation of each wafer chamfering machine, and the like. There is.

The wafer feed unit 20 is composed of an X-axis base 21, two X-axis guide rails 22, 22, four X-axis linear guides 23, 23, ..., A ball screw and a stepping motor mounted on the main body base 11. It has an X table 24 that is moved in the X direction in the figure by the X-axis drive mechanism 25.

The X table 24 is moved in the Y direction in the figure by a Y-axis drive mechanism including two Y-axis guide rails 26, 26, four Y-axis linear guides 27, 27, ..., A ball screw and a stepping motor (not shown). The Y table 28 to be used is incorporated.

The Y table 28 is guided by two Z-axis guide rails 29 and 29 and four Z-axis linear guides (not shown), and is moved in the Z direction in the figure by a Z-axis drive mechanism 30 including a ball screw and a stepping motor. Z table 31 is incorporated.

A θ-axis motor 32 and a θ-spindle 33 are incorporated in the Z table 31, and a wafer table 34 on which a wafer W (plate-shaped workpiece) is adsorbed and placed is attached to the θ-spindle 33. The wafer table 34 is rotated in the θ direction in the figure about the wafer table rotation axis CW.

By the wafer feed unit 20, the wafer W and the truer 41 are rotated in the θ direction in the figure and moved in the X, Y, and Z directions.

In the grindstone rotation unit 50, the outer peripheral grindstone 52 is attached, and the outer peripheral grindstone spindle 51 is rotationally driven around the axis by an outer peripheral grindstone motor (not shown), and the outer peripheral fine grinding is attached to the turntable 53 arranged above. It has a spindle 54 and a peripheral grinding wheel 56.

FIG. 3 is an enlarged side view of the portion of the grinding wheel 55, and the grinding wheel 55, which is a chamfering grindstone for finishing and grinding the outer periphery of the wafer W, is attached to the outer peripheral grinding wheel 54. The outer peripheral fine research spindle 54 is finished by chamfering the outer circumference of the wafer W in a state of being tilted by 3 to 20 degrees with respect to the rotation axis R of the wafer W. As a result, helical grinding is performed, and although weak grinding marks are generated in the chamfered portion of the wafer W in the diagonal direction, the effect of improving the surface roughness of the chamfered portion can be obtained as compared with normal grinding.

The wafer processing process is performed in the order of slicing → chamfering → wrapping → etching → donor killer → fine chamfering, and various cleanings are used to remove stains between the processes. Silicone is hard and brittle, and if the end face of the wafer remains sharp during slicing, it will easily crack or chip during handling such as transportation and alignment in the subsequent processing process, and the fragments will damage or contaminate the wafer surface. Or something. In order to prevent this, in the chamfering process, the end face of the cut wafer is chamfered with a chamfering grindstone coated with diamond.

As the grinding wheel 55, for example, a grinding wheel 55 having a metal powder such as Fe, Cr, or Cu as a main component and being mixed with diamond abrasive grains is used. As the material, for example, it is desirable that the main component is phenol resin, epoxy resin, polyimide resin, polystyrene resin, polyethylene resin or the like, and the material is formed by mixing diamond abrasive grains or cubic boron nitride abrasive grains.

The grinding wheel 55 is a resin bond grindstone having diamond abrasive grains having a diameter of 50 mm, and has a particle size of # 3000. The outer peripheral Seiken spindle 54 is a built-in motor-driven spindle using an air bearing, and is rotated at a rotation speed of 35,000 rpm.

FIG. 4 is a cross-sectional view showing the relationship between the grinding wheel 55 and the wafer W, and is in a state where the rotation axis R is tilted. The grinding groove of the grinding wheel 55 has an upper surface slope 55u, a central portion 55C, and a lower surface slope 55d. The upper surface slope 55u is the upper surface of the wafer W to be processed, and the lower surface slope 55d is the contact area with the lower surface. The upper and lower ends (Tu and Td regions), which are the upper and lower parts of the processed wafer W, have streak in a different direction due to the slope of the streak as compared with the central portion C. Then, the effect of helical grinding is sufficiently obtained, and the processing distortion and surface roughness are improved as much as the central portion.

FIG. 5 is a cross-sectional view showing the shape of the wafer W after processing. Strictly speaking, the inclination of the rotation axis R differs for each wafer chamfering machine 10-1, 10-2, 10-3 ... In FIG. 1, even if the reference value is set to 15 degrees, that is, there is a difference between the axes. Is set. Further, even if the inclination of the rotating shaft R is the same for the wafer chamfering machines 10-1, 10-2, 10-3, etc., the inclination and shape of the grinding wheel 55 with respect to the rotating shaft R are different.

The inclination of the grinding wheel 55 with respect to the rotating shaft R can also be regarded as the difference between the shafts. Further, in addition to the difference between the shafts, the wafer chamfering machines 10-1, 10-2, 10 and the like, such as the inclination of the wafer table 34 for fixing the wafer W, the fixed state of the wafer W, the grinding resistance, the wear condition, and the supply condition of the grinding fluid. -The difference in each unit of 3 ... affects the shape accuracy of the machined surface.

FIG. 5 is an example of a cross-sectional view showing the shape of the wafer W after processing. FIG. 5 (a) shows a thickness of 740 μm, an upper surface A1 of 290 μm, a B1 of 260 μm, and a θ1 of 44 degrees, while the lower surface thereof. This is an example in which A2 is processed at 290 μm, B2 is processed at 240 μm, and θ2 is processed at 42 degrees. The values of A1, B1, θ1, A2, B2, and θ2 are processed differently for each wafer chamfering machine 10-1, 10-2, 10-3, etc. due to the difference between the axes of the rotating shaft R and the like.

Further, FIG. 5B is an example of a cross-sectional view showing the shape of the wafer W after processing. The thickness is 740 μm, the upper surface A1 is 340 μm, B1 is 300 μm, θ1 is 43 degrees, and the lower surface A2 is 250 μm. , B2 is 190 μm, θ2 is 40 degrees, and the symmetry of the chamfered portion may be broken. From the above, it was important to adjust various conditions, especially the inclination of the rotating shaft, for each of the wafer chamfering machines 10-1, 10-2, 10-3 ....

FIG. 6 is a flowchart showing a method of managing and correcting the shape accuracy of the wafer in the wafer chamfering line in which a plurality of wafer chamfering machines 10 are installed. It corrects the influence of. It will be described with reference to the block diagram of FIG.

In step 1, the wafer W processed by each wafer chamfering machine 10-1, 10-2, 10-3 ... is taken out, and the end face shape of the wafer W is measured by the wafer shape measuring machine 2. The measured data is input to the controller 3-1 of the truing device 3.

In the controller 3-1 as step 2, the grindstone shape data, particularly the axis data showing the tilt of the rotating shaft R, which is one of the grindstone shape data, or the tilt and reference of the rotating shaft R, is based on the data as shown in FIG. Convert as inter-axis difference data showing the difference from the value. In step 3, the shape of the grinding wheel 55 is corrected from the values obtained in step 2 and the difference data between the shafts, that is, the necessity of growing is determined.

FIG. 7 is a side view showing the operation of the truing performed by the grindstone processing machine 3-2 of the truing device 3. The trueuing grindstone 141 (hereinafter referred to as the truer 141) used for the trueuing of the grinding wheel 55 for finishing and chamfering the peripheral edge of the wafer W is attached to the master table 134 of the grindstone processing machine 3-2 and rotated by a master motor (not shown). To. The grindstone processing machine 3-2 is capable of truing the grinding grindstone 55 used in all the wafer chamfering machines 10-1, 10-2, 10-3, and so on.

FIG. 8 is a cross-sectional view of the master grindstone 142 provided in the grindstone processing machine 3-2. Prior to the truing of the grinding wheel 55, the outer peripheral portion of the turret 141 is processed by the master grindstone 142, and one of the shapes of the master groove group 143 provided on the outer peripheral portion of the master grindstone 142 is transferred to the outer peripheral portion of the turret 141. Whetstone.

FIG. 9 is a cross-sectional view showing the master groove group 143, and a plurality of grooves are provided corresponding to the inter-axis difference data, such as master grooves 143-1, 143-2, ... 143-8. For example, when the reference value of the inclination of the rotation axis R shown in FIG. 3 is 15 degrees, the master groove 143-1 has a shape corresponding to 15.0 degrees, the master groove 143-2 has a shape of 15.5 degrees, and the master groove. 143-3 is 16.0 degrees, master groove 143-4 is 16.5 degrees, master groove 143-5 is 17.0 degrees, master groove 143-6 is 14.5 degrees, master groove 143-7 is 14. The correction range is set so that the reference value is plus or minus with respect to 15 degrees, such as 0 degrees and the master groove 143-8 is 13.5 degrees. The same applies when the reference value is 18 degrees.

In step 4, the difference between the grindstone shape data, particularly the grindstone shape data and the reference value is used as the inter-axis difference for the wafer chamfering machines 10-1, 10-2, 10-3 ... , It is determined whether any of the master grooves 143-1, 143-2, ... 143-8 is suitable for modifying the grinding wheel 55.

In step 5, the outer peripheral portion of the turret 141 is machined with the master groove determined in step 4, and the cross-sectional shape of the master groove determined is transferred to the cross-sectional shape of the outer peripheral portion of the turret 141. Then, the grinding groove of the grinding wheel 55 is formed by using the truer 141 to which the cross-sectional shape of the master groove determined on the outer peripheral portion is transferred. In this processing, the master grindstone 142 is rotated at a rotation speed of 8,000 rpm, and the truer 141 is moved in the Z direction of FIG. 7, and the determined master groove is selected.

Machining conditions are determined so that the grindstone processing machine 3-2 can be commonly used in a wafer chamfering line in which a plurality of wafer chamfering machines 10 are installed. Therefore, since the grinding wheel 55 (FIG. 2) of each waha chamfering machine 10-1, 10-2, 10-3 ... is trued by the common grindstone processing machine 3-2, each waha chamfering machine 10-1 It does not depend on the individual machining conditions in 10-2, 10-3, etc., particularly the setting of the rotation axis of the grinding wheel. Further, each wafer chamfering machine 10-1, 10-2, 10-3, etc. is not affected by the shape accuracy due to different processing conditions, and the transfer is performed in a shape having more accurate and uniform quality.

As the material of the turret 141, a material capable of grinding the grinding wheel 55 while being able to be processed by the master grindstone 142 is adopted. For example, it is desirable that abrasive grains made of silicon carbide are bonded with a phenol resin by adding a filler or the like as necessary, and this is formed into a disk-shaped turret 141.

Further, the truer 141 has an outer diameter equal to or smaller than that of the wafer W to be processed, and may be a disk-shaped GC (Green silicon carbide) grindstone or a WA (White fused aluminum) grindstone having the same thickness, and the grain size of the grindstone is # 320. The degree is good.

In step 6, the wafer W is machined using the grinding wheel 55 on which the grinding groove is formed in step 5. The processed wafer W returns to step 1 and the end face shape and the like are measured again. In the shape measurement of step 1, the shape measurement of step 1 is performed for all the wafer chamfering machines 10-1, 10-2, 10 at the initial stage when the wafer chamfering line in which a plurality of wafer chamfering machines 10 are installed is installed. It is desirable to perform the steps from step 1 to step 6 on the wafer W processed in -3.

At this time, in step 4, which of the master grooves 143-1, 143-2, ... 143-8 was determined for each of the wafer chamfering machines 10-1, 10-2, 10-3 ... Is made into a database and stored in the controller 3-1. This shortens the time required for the repairing process of the grinding wheel and facilitates quality control.

FIG. 10 shows the results of a true wing test in which the shape angle of the wafer W processed by the true grooving grindstone 55 (FIG. 7) was actually measured. In the test, there are five types of master grooves in the master groove group 143 (FIG. 8), grooves 1 to 5, and the wafer chamfering machines 10-1, 10-2, 10-3 ... have 4 machines, each of which has 2 machining axes. A total of 8 axes, A to H, were used for the axes. In FIG. 10, the vertical axis is the groove 1 to the groove 5 which is the master groove, and the horizontal axis is each processing axis A to H. The groove 1 was 17.6 degrees, the groove 2 was 17.8 degrees, the groove 3 was 18.0 degrees, the groove 4 was 18.2 degrees, and the groove 5 was 18.4 degrees. Further, the reference value of the inclination of the rotation axis R shown in FIG. 3 is set to 18 degrees. Then, it is the result of processing the wafer W in the grooves 1 to 5 for each processing axis and measuring the shape.

It is optimal to select a groove 1 to a groove 5 having a target shape of 18.0 degrees for each machining axis. As can be seen from FIG. 10, the machining shaft A is the groove 2, the machining shaft B is the groove 3, the machining shaft C is the groove 4 (or the groove 5), the machining shaft D is the groove 3, the machining shaft E is the groove 1, and the machining shaft F. The optimum is groove 2, the processing shaft G is optimally groove 2, and the processing shaft H is optimally groove 2. Therefore, in this test example, the relationship between each machining axis and the optimum groove is stored in a database in the controller 3-1 (FIG. 1).

When a wafer chamfering line is installed and production is being performed, the shape of step 1 is measured at appropriate time or for each predetermined number of wafers W processed. Wafer chamfering machines 10-1, 10-2, 10 -Perform for the wafer W processed in 3 ...

At this time, when the total time reaches a predetermined time for all the wafer chamfering machines 10-1, 10-2, 10-3, etc. or the total number of processed wafers W reaches a predetermined value, the wafer chamfering machine is used. When any one of 10-1, 10-2, 10-3, and the like reaches a predetermined time or a predetermined number of wafers to be processed, it may be set.

However, when any one of the wafer chamfering machines 10-1, 10-2, 10-3, etc. reaches the specified number of wafers to be processed for a predetermined time or a predetermined number of wafers W, only the number of the wafer chamfering machine is reached at that time. Performing step 1 is more efficient than performing step 1 for all wafer chamfering machines 10-1, 10-2, 10-3 ... at that time without reducing productivity.

In any case, instead of performing steps 1 to 6 for each individual wafer chamfering machine 10-1, 10-2, 10-3 ..., the controller 3-1 and the grindstone processing machine 3-2 were provided. The trueing device 3 is provided exclusively. As a result, the difference in the processing conditions of each wafer chamfering machine is corrected in a concentrated manner, so that the shape accuracy of the wafer can be comprehensively controlled in the entire mass production line. Although it has been described by performing helical grinding in which the rotation axis of the grinding wheel 55 is tilted, even in normal end face grinding in which the rotation axis is not tilted, if the same modifications as in steps 1 to 6 are made, the entire mass production line is similarly performed. It is possible to comprehensively control the shape accuracy of the wafer and make the quality uniform.

W ... Weha, R ... Rotating shaft, 1 ... Weha chamfering line, 2 ... Weha shape measuring machine, 3 ... Truing device, 3-1 ... Controller, 3-2 ... Grinding machine, 10, 10-1, 10-2 10,-3 ... Weha chamfering machine, 11 ... Main body base, 20 ... Waha feed unit, 21 ... X-axis base, 22 ... X-axis guide rail, 23 ... X-axis linear guide, 24 ... X-table, 25 ... X-axis drive Mechanism, 26 ... Y-axis guide rail, 27 ... Y-axis linear guide, 28 ... Y table, 29 ... Z-axis guide rail, 30 ... Z-axis drive mechanism, 31 ... Z table, 32 ... θ-axis motor, 33 ... θ spindle , 34 ... Wafer table, 41 ... Truer, 50 ... Grinding wheel rotation unit, 51 ... Outer peripheral grind spindle, 52 ... Outer peripheral coarse grinding grind, 53 ... Turntable, 54 ... Outer peripheral fine grinding spindle, 55 ... Grinding grind, 55u ... Top slope , 55C ... Central part, 55d ... Bottom slope, 56 ... Outer circumference fine research motor, 141 ... Truing grindstone (truer), 134 ... Master table, 142 ... Master grindstone, 143 ... Master groove group, 143-1, 143-2, 143-3, 143-4, 143-5, 143-6, 143-7, 143-8 ... Master groove

Claims (10)

In a chamfering system having a plurality of wafer chamfering machines for chamfering the outer peripheral portion of a wafer using a grinding wheel.
The wafer chamfering line where multiple wafer chamfering machines are installed, and
A wafer shape measuring machine that measures the end face shape of the wafer processed by each wafer chamfering machine, and a wafer shape measuring machine.
A controller that determines whether or not the grinding wheel needs to be modified from the values measured by the wafer shape measuring machine, and
A grindstone processing machine in which a master grindstone provided with a plurality of master grooves is provided and the grindstone can form a grindstone of the grindstone by the master groove.
The controller determines one of the master grooves from a plurality of the master grooves based on the value measured by the wafer shape measuring machine, and the grindstone processing machine determines the master groove determined by the controller. A chamfering system characterized in that the grinding groove is formed by using. The controller converts the value measured by the wafer shape measuring machine as grindstone shape data, and determines one of the master grooves from the plurality of master grooves based on the difference between the grindstone shape data and the reference value. The chamfering processing system according to claim 1, wherein the chamfering process is performed. The controller converts the value measured by the wafer shape measuring machine as inter-axis difference data indicating the difference between the inclination of the rotation axis of the grinding wheel and the reference value, and the plurality of the above based on the inter-axis difference data. The chamfering system according to claim 1 or 2, wherein the master groove is determined from the master groove. The chamfering system according to any one of claims 1 to 3, wherein the grindstone processing machine can be commonly used by each of the wafer chamfering machines in the wafer chamfering line. The end face shape of the wafer is measured by the wafer shape measuring machine for all the wafer chamfering machines installed in the wafer chamfering line, the master groove is determined by the controller, and the master groove is determined by the grindstone processing machine. The chamfering system according to any one of claims 1 to 4, wherein the grinding groove is formed by using the master groove. The chamfering system according to any one of claims 1 to 5, wherein the master groove determined for each of the wafer chamfering machines is stored in a database and stored in the controller. The end face shape of the wafer is measured by the wafer shape measuring machine for a predetermined time or for each predetermined number of wafers processed, the master groove is determined by the controller, and the master groove is determined by the grindstone processing machine. The chamfering system according to any one of claims 1 to 6, wherein the grinding groove is formed by using the above. When the total number of wafers processed reaches a predetermined value on the wafer chamfering line, the shape of the end face of the wafer is measured by the wafer shape measuring machine, the master groove is determined by the controller, and the grindstone processing machine determines the master groove. The chamfering system according to any one of claims 1 to 7, wherein the grinding groove is formed by using the determined master groove. In a truing device that forms a grinding groove by truing a grinding wheel that chamfers a wafer.
A controller that determines whether or not the grinding wheel needs to be modified from the measured value of the end face shape of the wafer, and
A grindstone processing machine in which a master grindstone provided with a plurality of master grooves is provided and the grinding groove can be formed by the master grooves.
The controller determines one of the master grooves from a plurality of the master grooves based on the measured value of the end face shape of the wafer, and the grindstone processing machine uses the master groove determined by the controller. A trueing device characterized by forming the grinding groove. The turreting device according to claim 9, wherein the turret to which the shape of the master groove is transferred to the outer peripheral portion and the grinding groove are formed by using the turret.

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