JP6935126B2 - ウェーハのレーザ加工方法 - Google Patents
ウェーハのレーザ加工方法 Download PDFInfo
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- JP6935126B2 JP6935126B2 JP2017075405A JP2017075405A JP6935126B2 JP 6935126 B2 JP6935126 B2 JP 6935126B2 JP 2017075405 A JP2017075405 A JP 2017075405A JP 2017075405 A JP2017075405 A JP 2017075405A JP 6935126 B2 JP6935126 B2 JP 6935126B2
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- 238000003754 machining Methods 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 13
- 235000012431 wafers Nutrition 0.000 claims description 116
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 238000003672 processing method Methods 0.000 claims description 10
- 230000002745 absorbent Effects 0.000 claims description 3
- 239000002250 absorbent Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 10
- 238000002679 ablation Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Description
1a 表面
1b 裏面
3 分割予定ライン
5 デバイス
7 テープ
9 フレーム
11 加工溝
13 加工屑
2 レーザ加工装置
4 チャックテーブル
4a 保持面
4b 加工送り方向
4c クランプ
6 レーザビーム照射ユニット
8 レーザビーム発振器
10 レーザビーム分岐ユニット
12 集光レンズ
12a 反射鏡
14 レーザビーム
14a スポット
Claims (3)
- ウェーハに対して吸収性を有する波長のパルスレーザビームを発振するレーザビーム発振器と、レーザビーム分岐ユニットと、集光レンズと、を有し、該レーザビーム発振器により発振され該レーザビーム分岐ユニットにより分岐されて形成された複数のレーザビームを該集光レンズを通してチャックテーブルに保持されたウェーハに照射する機能を有するレーザビーム照射ユニットを備えるレーザ加工装置を用いて、表面に格子状に設定された複数の分割予定ラインにより区画されたそれぞれの領域にデバイスを備えるウェーハを加工するウェーハのレーザ加工方法であって、
該ウェーハを該チャックテーブルにより保持する保持ステップと、
該複数のレーザビームを該分割予定ラインに沿って該ウェーハに照射し、該分割予定ラインに沿う加工溝を該ウェーハに形成する加工溝形成ステップと、を備え、
該加工溝形成ステップでは、
該レーザビーム分岐ユニットで分岐された該複数のレーザビームを、該複数のレーザビームが照射される該分割予定ラインの伸長方向に対して非平行な方向に一直線状に並べ、
それぞれの該分割予定ラインにおいて該複数のレーザビームが同時に照射され、該複数のレーザビームのすべてが該ウェーハを部分的に加熱し除去することでそれぞれの該加工溝が形成されることを特徴とするウェーハのレーザ加工方法。 - 該加工溝形成ステップでは、該複数のレーザビームを該複数の該分割予定ラインのそれぞれに沿って該ウェーハに2回以上照射し、該加工溝によって該ウェーハを分割することを特徴とする請求項1に記載のウェーハのレーザ加工方法。
- 該加工溝形成ステップにおいて一直線状に並ぶ該複数のレーザビームのそれぞれで加工される該ウェーハの各領域は、隣接する他の該領域と該分割予定ラインに沿った方向に沿って部分的に重なることを特徴とする請求項1または請求項2に記載のウェーハのレーザ加工方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017075405A JP6935126B2 (ja) | 2017-04-05 | 2017-04-05 | ウェーハのレーザ加工方法 |
TW107107788A TWI744499B (zh) | 2017-04-05 | 2018-03-08 | 晶圓的雷射加工方法 |
KR1020180033917A KR102445075B1 (ko) | 2017-04-05 | 2018-03-23 | 웨이퍼의 레이저 가공 방법 |
CN201810295763.1A CN108687446B (zh) | 2017-04-05 | 2018-03-30 | 晶片的激光加工方法 |
US15/944,493 US10818554B2 (en) | 2017-04-05 | 2018-04-03 | Laser processing method of wafer using plural laser beams |
SG10201802803YA SG10201802803YA (en) | 2017-04-05 | 2018-04-04 | Laser processing method of wafer |
DE102018205019.8A DE102018205019B4 (de) | 2017-04-05 | 2018-04-04 | Laserbearbeitungsverfahren eines wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017075405A JP6935126B2 (ja) | 2017-04-05 | 2017-04-05 | ウェーハのレーザ加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018181938A JP2018181938A (ja) | 2018-11-15 |
JP6935126B2 true JP6935126B2 (ja) | 2021-09-15 |
Family
ID=63588255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017075405A Active JP6935126B2 (ja) | 2017-04-05 | 2017-04-05 | ウェーハのレーザ加工方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10818554B2 (ja) |
JP (1) | JP6935126B2 (ja) |
KR (1) | KR102445075B1 (ja) |
CN (1) | CN108687446B (ja) |
DE (1) | DE102018205019B4 (ja) |
SG (1) | SG10201802803YA (ja) |
TW (1) | TWI744499B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7507599B2 (ja) * | 2020-05-12 | 2024-06-28 | 株式会社ディスコ | レーザー加工方法 |
CN114535836A (zh) * | 2022-03-25 | 2022-05-27 | 华虹半导体(无锡)有限公司 | 晶圆的切割方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3647920B2 (ja) * | 1995-03-14 | 2005-05-18 | 三菱伸銅株式会社 | 金属蒸着フィルムのマージン加工装置 |
JP2004268144A (ja) * | 2003-02-21 | 2004-09-30 | Seishin Shoji Kk | レーザ加工装置 |
EP1518634A1 (en) * | 2003-09-23 | 2005-03-30 | Advanced Laser Separation International (ALSI) B.V. | A method of and a device for separating semiconductor elements formed in a wafer of semiconductor material |
JP4471632B2 (ja) * | 2003-11-18 | 2010-06-02 | 株式会社ディスコ | ウエーハの加工方法 |
KR100813350B1 (ko) * | 2004-03-05 | 2008-03-12 | 올림푸스 가부시키가이샤 | 레이저 가공 장치 |
US7732351B2 (en) * | 2006-09-21 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device and laser processing apparatus |
JP5431989B2 (ja) * | 2010-01-29 | 2014-03-05 | 株式会社ディスコ | レーザー加工装置 |
JP5534853B2 (ja) * | 2010-02-18 | 2014-07-02 | 芝浦メカトロニクス株式会社 | レーザ照射装置およびレーザ照射方法 |
JP2012096274A (ja) * | 2010-11-04 | 2012-05-24 | Disco Corp | レーザー加工装置 |
JP5308431B2 (ja) * | 2010-12-06 | 2013-10-09 | 三星ダイヤモンド工業株式会社 | レーザ光によるライン加工方法およびレーザ加工装置 |
JP5947056B2 (ja) * | 2012-02-24 | 2016-07-06 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
US8652940B2 (en) | 2012-04-10 | 2014-02-18 | Applied Materials, Inc. | Wafer dicing used hybrid multi-step laser scribing process with plasma etch |
JP6425368B2 (ja) * | 2012-04-27 | 2018-11-21 | 株式会社ディスコ | レーザー加工装置及びレーザー加工方法 |
JP6068062B2 (ja) | 2012-09-03 | 2017-01-25 | 株式会社ディスコ | レーザー加工装置 |
TWI543833B (zh) * | 2013-01-28 | 2016-08-01 | 先進科技新加坡有限公司 | 將半導體基板輻射開槽之方法 |
PT2974822T (pt) * | 2014-07-14 | 2017-11-14 | Asm Tech Singapore Pte Ltd | Método de divisão de substratos semicondutores finos |
US10307867B2 (en) | 2014-11-05 | 2019-06-04 | Asm Technology Singapore Pte Ltd | Laser fiber array for singulating semiconductor wafers |
JP6441731B2 (ja) | 2015-04-03 | 2018-12-19 | 株式会社ディスコ | レーザー加工装置 |
TWI628027B (zh) * | 2015-04-21 | 2018-07-01 | 先進科技新加坡有限公司 | 用於切割晶元的方法和設備 |
JP6434360B2 (ja) * | 2015-04-27 | 2018-12-05 | 株式会社ディスコ | レーザー加工装置 |
-
2017
- 2017-04-05 JP JP2017075405A patent/JP6935126B2/ja active Active
-
2018
- 2018-03-08 TW TW107107788A patent/TWI744499B/zh active
- 2018-03-23 KR KR1020180033917A patent/KR102445075B1/ko active IP Right Grant
- 2018-03-30 CN CN201810295763.1A patent/CN108687446B/zh active Active
- 2018-04-03 US US15/944,493 patent/US10818554B2/en active Active
- 2018-04-04 SG SG10201802803YA patent/SG10201802803YA/en unknown
- 2018-04-04 DE DE102018205019.8A patent/DE102018205019B4/de active Active
Also Published As
Publication number | Publication date |
---|---|
DE102018205019A1 (de) | 2018-10-11 |
CN108687446B (zh) | 2021-10-08 |
KR102445075B1 (ko) | 2022-09-19 |
CN108687446A (zh) | 2018-10-23 |
DE102018205019B4 (de) | 2021-10-28 |
TW201839845A (zh) | 2018-11-01 |
JP2018181938A (ja) | 2018-11-15 |
US20180294190A1 (en) | 2018-10-11 |
SG10201802803YA (en) | 2018-11-29 |
KR20180113162A (ko) | 2018-10-15 |
US10818554B2 (en) | 2020-10-27 |
TWI744499B (zh) | 2021-11-01 |
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