JP6913031B2 - Methods for Producing Polymers, Radiation Sensitive Compositions, Compounds and Devices - Google Patents
Methods for Producing Polymers, Radiation Sensitive Compositions, Compounds and Devices Download PDFInfo
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- JP6913031B2 JP6913031B2 JP2017558936A JP2017558936A JP6913031B2 JP 6913031 B2 JP6913031 B2 JP 6913031B2 JP 2017558936 A JP2017558936 A JP 2017558936A JP 2017558936 A JP2017558936 A JP 2017558936A JP 6913031 B2 JP6913031 B2 JP 6913031B2
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- 229920000642 polymer Polymers 0.000 title claims description 70
- 230000005855 radiation Effects 0.000 title claims description 64
- 239000000203 mixture Substances 0.000 title claims description 43
- 150000001875 compounds Chemical class 0.000 title claims description 28
- 238000000034 method Methods 0.000 title description 22
- 239000002253 acid Substances 0.000 claims description 57
- 125000004432 carbon atom Chemical group C* 0.000 claims description 49
- 125000001424 substituent group Chemical group 0.000 claims description 40
- 229910052731 fluorine Inorganic materials 0.000 claims description 35
- 125000000217 alkyl group Chemical group 0.000 claims description 32
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 25
- 125000002723 alicyclic group Chemical group 0.000 claims description 24
- 125000001931 aliphatic group Chemical group 0.000 claims description 21
- 125000001153 fluoro group Chemical group F* 0.000 claims description 20
- 239000011737 fluorine Substances 0.000 claims description 18
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 17
- 150000003951 lactams Chemical group 0.000 claims description 13
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 claims description 13
- 125000003342 alkenyl group Chemical group 0.000 claims description 12
- 125000005842 heteroatom Chemical group 0.000 claims description 12
- 150000008053 sultones Chemical group 0.000 claims description 12
- 125000004122 cyclic group Chemical group 0.000 claims description 11
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000005871 repellent Substances 0.000 claims description 10
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims description 8
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 7
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 125000004434 sulfur atom Chemical group 0.000 claims description 7
- 125000005708 carbonyloxy group Chemical group [*:2]OC([*:1])=O 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000006467 substitution reaction Methods 0.000 claims description 4
- 125000000686 lactone group Chemical group 0.000 claims 4
- -1 i-hexyl group Chemical group 0.000 description 64
- 150000001450 anions Chemical class 0.000 description 25
- 229910052799 carbon Inorganic materials 0.000 description 25
- 239000000178 monomer Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 21
- 238000003786 synthesis reaction Methods 0.000 description 19
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 17
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 16
- 150000002596 lactones Chemical group 0.000 description 16
- 239000000243 solution Substances 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 108010000020 Platelet Factor 3 Proteins 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 9
- 238000006116 polymerization reaction Methods 0.000 description 9
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical compound [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 description 8
- 125000004093 cyano group Chemical group *C#N 0.000 description 8
- 150000001721 carbon Chemical group 0.000 description 7
- 238000010494 dissociation reaction Methods 0.000 description 7
- 230000005593 dissociations Effects 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- 125000005843 halogen group Chemical group 0.000 description 6
- 150000002430 hydrocarbons Chemical group 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 238000000746 purification Methods 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- ATVJXMYDOSMEPO-UHFFFAOYSA-N 3-prop-2-enoxyprop-1-ene Chemical group C=CCOCC=C ATVJXMYDOSMEPO-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical group C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 4
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 125000005647 linker group Chemical group 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 125000002950 monocyclic group Chemical group 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 125000003367 polycyclic group Chemical group 0.000 description 4
- 125000005504 styryl group Chemical group 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 3
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 3
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 3
- 125000002729 alkyl fluoride group Chemical group 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 3
- 230000002165 photosensitisation Effects 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 239000007870 radical polymerization initiator Substances 0.000 description 3
- 230000001235 sensitizing effect Effects 0.000 description 3
- 238000010898 silica gel chromatography Methods 0.000 description 3
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- 238000010626 work up procedure Methods 0.000 description 3
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- DNRJTBAOUJJKDY-UHFFFAOYSA-N 2-Acetyl-3,5,5,6,8,8-hexamethyl-5,6,7,8- tetrahydronaphthalene Chemical compound CC(=O)C1=C(C)C=C2C(C)(C)C(C)CC(C)(C)C2=C1 DNRJTBAOUJJKDY-UHFFFAOYSA-N 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 125000002252 acyl group Chemical group 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 125000004104 aryloxy group Chemical group 0.000 description 2
- CUFNKYGDVFVPHO-UHFFFAOYSA-N azulene Chemical compound C1=CC=CC2=CC=CC2=C1 CUFNKYGDVFVPHO-UHFFFAOYSA-N 0.000 description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- QDHFHIQKOVNCNC-UHFFFAOYSA-N butane-1-sulfonic acid Chemical compound CCCCS(O)(=O)=O QDHFHIQKOVNCNC-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 2
- IYYZUPMFVPLQIF-UHFFFAOYSA-N dibenzothiophene Chemical compound C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000001072 heteroaryl group Chemical group 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 125000005575 polycyclic aromatic hydrocarbon group Chemical group 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 2
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 2
- 239000012953 triphenylsulfonium Substances 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- XBWQFDNGNOOMDZ-UHFFFAOYSA-N 1,1,2,2,3,3,3-heptafluoropropane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)F XBWQFDNGNOOMDZ-UHFFFAOYSA-N 0.000 description 1
- ULTHEAFYOOPTTB-UHFFFAOYSA-N 1,4-dibromobutane Chemical compound BrCCCCBr ULTHEAFYOOPTTB-UHFFFAOYSA-N 0.000 description 1
- MPPPKRYCTPRNTB-UHFFFAOYSA-N 1-bromobutane Chemical compound CCCCBr MPPPKRYCTPRNTB-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- TZMSYXZUNZXBOL-UHFFFAOYSA-N 10H-phenoxazine Chemical compound C1=CC=C2NC3=CC=CC=C3OC2=C1 TZMSYXZUNZXBOL-UHFFFAOYSA-N 0.000 description 1
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 1
- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical compound OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- GJCOSYZMQJWQCA-UHFFFAOYSA-N 9H-xanthene Chemical compound C1=CC=C2CC3=CC=CC=C3OC2=C1 GJCOSYZMQJWQCA-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 1
- 229910016467 AlCl 4 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- LTGKWMOQUUFUPM-UHFFFAOYSA-M C12(CC3CC(CC(C1)C3)C2)C(=O)OCCC(C(S(=O)(=O)[O-])(F)F)F Chemical compound C12(CC3CC(CC(C1)C3)C2)C(=O)OCCC(C(S(=O)(=O)[O-])(F)F)F LTGKWMOQUUFUPM-UHFFFAOYSA-M 0.000 description 1
- JJMQLQLMPJLIPZ-UHFFFAOYSA-N CC(C(OC(C1CC2C3C1)C3OC2=O)=O)=C Chemical compound CC(C(OC(C1CC2C3C1)C3OC2=O)=O)=C JJMQLQLMPJLIPZ-UHFFFAOYSA-N 0.000 description 1
- UQNPZIMBBDPGKH-UHFFFAOYSA-N CC(C(OC1(CCCC1)C(CCO1)C1=O)=O)=C Chemical compound CC(C(OC1(CCCC1)C(CCO1)C1=O)=O)=C UQNPZIMBBDPGKH-UHFFFAOYSA-N 0.000 description 1
- MCWNDGDJMBNKIR-UHFFFAOYSA-N CC(C)(C1(C)CC2)C2(C2(CCCC2)OC(C(C)=C)=O)OC1=O Chemical compound CC(C)(C1(C)CC2)C2(C2(CCCC2)OC(C(C)=C)=O)OC1=O MCWNDGDJMBNKIR-UHFFFAOYSA-N 0.000 description 1
- 0 CC(CC(C*1)C2)CC2C1(C(CCO1)C1=O)OC(C(C)=C)=O Chemical compound CC(CC(C*1)C2)CC2C1(C(CCO1)C1=O)OC(C(C)=C)=O 0.000 description 1
- ITKOVCJXDZMLKF-UHFFFAOYSA-N CCCCC(CCCC)(C1(C(C)(C)C2(C)CC1)OC2=O)OC(C(C)=C)=O Chemical compound CCCCC(CCCC)(C1(C(C)(C)C2(C)CC1)OC2=O)OC(C(C)=C)=O ITKOVCJXDZMLKF-UHFFFAOYSA-N 0.000 description 1
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000003747 Grignard reaction Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 229910018286 SbF 6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 125000005110 aryl thio group Chemical group 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010511 deprotection reaction Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 125000006575 electron-withdrawing group Chemical group 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- QDLAGTHXVHQKRE-UHFFFAOYSA-N lichenxanthone Natural products COC1=CC(O)=C2C(=O)C3=C(C)C=C(OC)C=C3OC2=C1 QDLAGTHXVHQKRE-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VHRYZQNGTZXDNX-UHFFFAOYSA-N methacryloyl chloride Chemical compound CC(=C)C(Cl)=O VHRYZQNGTZXDNX-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000006239 protecting group Chemical group 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- IWDANOJGJIFBEL-UHFFFAOYSA-N spiro[3.4]octane Chemical compound C1CCC21CCCC2 IWDANOJGJIFBEL-UHFFFAOYSA-N 0.000 description 1
- PHICBFWUYUCFKS-UHFFFAOYSA-N spiro[4.4]nonane Chemical compound C1CCCC21CCCC2 PHICBFWUYUCFKS-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003458 sulfonic acid derivatives Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001412 tetrahydropyranyl group Chemical group 0.000 description 1
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical class C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 1
- GVIJJXMXTUZIOD-UHFFFAOYSA-N thianthrene Chemical compound C1=CC=C2SC3=CC=CC=C3SC2=C1 GVIJJXMXTUZIOD-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/12—Esters of monohydric alcohols or phenols
- C08F20/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F20/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本発明のいくつかの態様は、化学増幅型フォトレジスト材料として有用なポリマー及び化合物に関する。また、本発明のいくつかの態様は、ディープUV、KrFエキシマレーザ光、ArFエキシマレーザ光、F2エキシマレーザ光、電子線、X線又はEUV(極端紫外線)等の活性エネルギー線の照射により容易に分解して酸を発生する感放射線性酸発生剤と、上記ポリマーと、を含有する感放射線性組成物及びそれを用いたデバイスの製造方法に関する。Some aspects of the invention relate to polymers and compounds useful as chemically amplified photoresist materials. Further, some embodiments of the present invention is facilitated by irradiation of deep-UV, KrF excimer laser light, ArF excimer laser, F 2 excimer laser light, electron beam, X-ray or EUV (extreme ultraviolet) active energy rays such as The present invention relates to a radiation-sensitive composition containing a radiation-sensitive acid generator that decomposes into and generates an acid, and the above-mentioned polymer, and a method for producing a device using the same.
半導体デバイス、例えば、DRAM等に代表される高集積回路素子では、一層の高密度化、高集積化、あるいは高速化の要望が高い。それに伴い、各種電子デバイス製造分野では、ハーフミクロンオーダーの微細加工技術の確立、例えば、微細パターン形成のためのフォトリソグラフィ技術開発に対する要求がますます厳しくなっている。フォトリソグラフィ技術において微細パターンを形成するためには、解像度を向上させる必要がある。ここで、縮小投影露光装置の解像度(R)は、レイリーの式R=k・λ/NA(ここでλは露光光の波長、NAはレンズの開口数、kはプロセスファクター)で表されるため、レジストのパターン形成の際に用いる活性エネルギー線(露光光)の波長λを短波長化することにより解像度を向上させることができる。 In semiconductor devices, for example, highly integrated circuit elements typified by DRAM and the like, there is a high demand for higher density, higher integration, or higher speed. Along with this, in various electronic device manufacturing fields, there is an increasing demand for establishment of microfabrication technology on the order of half micron, for example, development of photolithography technology for fine pattern formation. In order to form fine patterns in photolithography technology, it is necessary to improve the resolution. Here, the resolution (R) of the reduced projection exposure apparatus is represented by Rayleigh's equation R = k · λ / NA (where λ is the wavelength of the exposure light, NA is the numerical aperture of the lens, and k is the process factor). Therefore, the resolution can be improved by shortening the wavelength λ of the active energy ray (exposure light) used when forming the pattern of the resist.
短波長に適したフォトレジスト材料として、化学増幅型のものが提案されている(特許文献1)。化学増幅型フォトレジスト材料の特徴は、露光光の照射により含有成分である感放射線性酸発生剤からプロトン酸が発生し、このプロトン酸が露光後の加熱処理によりレジスト化合物等と酸触媒反応を起こすことである。現在開発されているフォトレジスト材料の大半は、化学増幅型である。
例えば、現像液としてアルカリ現像液を用いる場合のポジ型の化学増幅型レジスト用ポリマーとして、酸に対して不安定であってアルカリ現像液に対する溶解性を制御できる置換基で保護したものが提案され、微細化の検討が行われている(特許文献2)。As a photoresist material suitable for short wavelengths, a chemically amplified type has been proposed (Patent Document 1). The characteristic of the chemically amplified photoresist material is that protonic acid is generated from the radiation-sensitive acid generator, which is a contained component, by irradiation with exposure light, and this protonic acid undergoes an acid-catalyzed reaction with a resist compound or the like by heat treatment after exposure. To wake up. Most of the photoresist materials currently being developed are chemically amplified.
For example, as a positive type chemically amplified resist polymer when an alkaline developer is used as the developer, a polymer that is unstable to acid and protected by a substituent that can control the solubility in the alkaline developer has been proposed. , Study of miniaturization is being carried out (Patent Document 2).
ポジ型又はネガ型に関わらず化学増幅型レジストにおいては、微細化が進むにつれて、解像性及びレジストパターンの断面形状の矩形性に優れるだけでなく、LWR(Line Width Roughness)、CDU(Critical Dimension Uniformity)及びEL(露光ラチチュード)の性能が要求されている。従来、感放射線性組成物に含まれるポリマーを構成する化合物が種々検討されてきたが、これらの性能を同時に満たすことは難しい。 Regardless of whether it is a positive type or a negative type, the chemically amplified resist not only has excellent resolution and rectangularity of the cross-sectional shape of the resist pattern as miniaturization progresses, but also has LWR (Line Width Roughness) and CDU (Critical Dimension). Uniformity) and EL (exposure latitude) performance are required. Conventionally, various compounds constituting a polymer contained in a radiation-sensitive composition have been studied, but it is difficult to satisfy these performances at the same time.
本発明のいくつかの態様は、このような事情に鑑み、LWR性能、CDU性能及びELの性能に優れる感放射線性組成物、それに用いる化合物及びポリマーを提供することを課題とする。
また、本発明のいくつかの態様は、上記感放射線性組成物を用いたデバイスの製造方法を提供することを課題とする。In view of such circumstances, it is an object of some aspects of the present invention to provide a radiation-sensitive composition having excellent LWR performance, CDU performance and EL performance, and a compound and a polymer used therein.
Another object of the present invention is to provide a method for manufacturing a device using the above-mentioned radiation-sensitive composition.
本発明者等は上記課題を解決するために鋭意検討した結果、特定の基を含む構造単位を有するポリマーを感放射線性組成物に用いた場合、LWR性能、CDU性能及びELの性能に優れることを見出し、本発明のいくつかの態様を完成するに至った。
上記課題を解決する本発明の一つの態様は、下記式(1)で示される基を含む構造単位(I)を有するポリマーである。As a result of diligent studies to solve the above problems, the present inventors are excellent in LWR performance, CDU performance and EL performance when a polymer having a structural unit containing a specific group is used in a radiation-sensitive composition. , And have completed some aspects of the present invention.
One aspect of the present invention that solves the above problems is a polymer having a structural unit (I) containing a group represented by the following formula (1).
上記式(1)中、R1及びR2は、それぞれ独立に、置換基を有してもよい直鎖状又は分岐状の炭素数1〜10の1価の脂肪族炭化水素基;置換基を有してもよい炭素数3〜15の1価の脂環式炭化水素基;前記脂肪族炭化水素基及び脂環式炭化水素基の少なくとも1つのメチレン基が2価のヘテロ原子含有基で置換された基;置換基を有してもよい炭素数6〜30の芳香族炭化水素基;並びに、置換基を有してもよい炭素数6〜30の芳香族複素環基;からなる群より選択されるいずれかであり、R1及びR2は互いに単結合で直接結合して、又は、酸素原子、硫黄原子及びメチレン基からなる群より選択されるいずれかを介して、環構造を形成してもよく、R3は、置換基を有してもよい、ラクトン骨格、スルトン骨格及びラクタム骨格からなる群より選択されるいずれかを含む炭素数3〜15の1価の橋かけ脂環式炭化水素基であり、Xは単結合若しくは2価の連結基であり、*はポリマー主鎖部との結合部位を示す。In the above formula (1), R 1 and R 2 are linear or branched monovalent aliphatic hydrocarbon groups having 1 to 10 carbon atoms, which may independently have substituents; substituents. A monovalent alicyclic hydrocarbon group having 3 to 15 carbon atoms; at least one methylene group of the aliphatic hydrocarbon group and the alicyclic hydrocarbon group is a divalent heteroatom-containing group. A group consisting of a substituted group; an aromatic hydrocarbon group having 6 to 30 carbon atoms which may have a substituent; and an aromatic heterocyclic group having 6 to 30 carbon atoms which may have a substituent. R 1 and R 2 are either directly bonded to each other in a single bond, or have a ring structure selected from the group consisting of an oxygen atom, a sulfur atom and a methylene group. R 3 may be formed, and R 3 is a monovalent bridging fat having 3 to 15 carbon atoms and containing any selected from the group consisting of a lactone skeleton, a sulton skeleton and a lactam skeleton, which may have a substituent. It is a cyclic hydrocarbon group, X is a single bond or a divalent linking group, and * indicates a bond site with a polymer main chain portion.
本発明の一つの態様は、下記式(3)で示される化合物である。 One aspect of the present invention is a compound represented by the following formula (3).
上記式(3)中、R1〜R3及びXはそれぞれ独立して上記式(1)のR1〜R3及びXの選択肢から選択されるいずれかであり、Yは重合性基を含む1価の基である。In the above formula (3), R 1 to R 3 and X are independently selected from the options of R 1 to R 3 and X in the above formula (1), respectively, and Y contains a polymerizable group. It is a monovalent group.
本発明の一つの態様は、上記感放射線性組成物を用いて基板上にレジスト膜を形成する工程と、放射線を用いて、上記レジスト膜を露光する工程と、露光されたレジスト膜を現像する工程と、を含むデバイスの製造方法である。 One aspect of the present invention is a step of forming a resist film on a substrate using the radiation-sensitive composition, a step of exposing the resist film using radiation, and developing the exposed resist film. A process and a method of manufacturing a device including.
本発明の一つの態様のポリマーを感放射線性組成物成分として用いることにより、LWR性能、CDU性能及びELの性能に優れるレジストパターンを形成することができる。 By using the polymer of one aspect of the present invention as a component of a radiation-sensitive composition, a resist pattern having excellent LWR performance, CDU performance and EL performance can be formed.
以下、本発明のいくつかの態様について詳細に説明する。
<1>ポリマー
(構造単位(I))
本発明の一つの態様のポリマーは、上記一般式(1)で示される基を含む構造単位(I)を有する。構造単位(I)は、XとR1〜R3とに結合した炭素(以下、「4級炭素」ともいう)を有し、R3として、ラクトン骨格、スルトン骨格及びラクタム骨格からなる群より選択される少なくともいずれかを含む炭素数3〜15の1価の橋かけ脂環式炭化水素基を有する。上記ポリマー中の構造単位(I)は、4級炭素を有することで酸解離能を有する。また、上記ポリマーはR3として構造的に適度にバルキーであり且つ極性である基を有するため、極性と疎水性とのバランスに優れ、該ポリマーを感放射線性組成物成分として用いると、解像度が向上する。
本発明の一つの態様のポリマーが、上記一般式(1)で示される基を含む構造単位(I)以外の構造単位を有する際、上記一般式(1)で示される基を含む構造単位(I)と他の構造単位との疎水相互作用を上げられ、非相溶性を少なくできる。また、ガラス転移温度(Tg)が適度に高く、ポリマーの剛直性が増すため、感放射線性酸発生剤の酸拡散性を抑制することができる。それにより、LWR性能、CDU性能及びEL性能等をより向上させることがきる。Hereinafter, some aspects of the present invention will be described in detail.
<1> Polymer (structural unit (I))
The polymer of one embodiment of the present invention has a structural unit (I) containing a group represented by the above general formula (1). The structural unit (I) has carbon bonded to X and R 1 to R 3 (hereinafter, also referred to as “quaternary carbon”), and R 3 is composed of a group consisting of a lactone skeleton, a sultone skeleton, and a lactam skeleton. It has a monovalent bridging alicyclic hydrocarbon group with 3 to 15 carbon atoms containing at least one of the selected carbon atoms. The structural unit (I) in the polymer has an acid dissociation ability by having a quaternary carbon. Further, since the polymer has a group that is structurally moderately bulky and polar as R 3 , it has an excellent balance between polarity and hydrophobicity, and when the polymer is used as a component of a radiation-sensitive composition, the resolution is improved. improves.
When the polymer of one embodiment of the present invention has a structural unit other than the structural unit (I) containing the group represented by the general formula (1), the structural unit containing the group represented by the general formula (1) ( The hydrophobic interaction between I) and other structural units can be increased, and incompatibility can be reduced. Further, since the glass transition temperature (Tg) is moderately high and the rigidity of the polymer is increased, the acid diffusivity of the radiation-sensitive acid generator can be suppressed. Thereby, LWR performance, CDU performance, EL performance and the like can be further improved.
本発明のいくつかの態様において、「酸解離能」とは、酸の作用により分解し脱保護することをいう。
上記式(1)中、R1及びR2は、それぞれ独立に、置換基を有してもよい直鎖状又は分岐状の炭素数1〜10の1価の脂肪族炭化水素基;置換基を有してもよい炭素数3〜15の1価の脂環式炭化水素基;上記脂肪族炭化水素基及び脂環式炭化水素基の少なくとも1つのメチレン基が2価のヘテロ原子含有基に置換された基;置換基を有しても良い炭素数6〜30の芳香族炭化水素基;並びに、置換基を有しても良い炭素数6〜30の芳香族複素環基;からなる群より選択されるいずれかであり、R1及びR2は互いに単結合で直接結合して、又は、酸素原子、硫黄原子及びメチレン基からなる群より選択されるいずれかを介して、環構造を形成してもよい。R1及びR2が置換基を有する場合、R1及びR2の上記した総炭素数は置換基を含めたものであることが好ましい。In some aspects of the invention, "acid dissociation ability" refers to decomposition and deprotection by the action of an acid.
In the above formula (1), R 1 and R 2 are linear or branched monovalent aliphatic hydrocarbon groups having 1 to 10 carbon atoms, which may independently have substituents; substituents. A monovalent alicyclic hydrocarbon group having 3 to 15 carbon atoms; at least one methylene group of the aliphatic hydrocarbon group and the alicyclic hydrocarbon group becomes a divalent heteroatom-containing group. A group consisting of a substituted group; an aromatic hydrocarbon group having 6 to 30 carbon atoms which may have a substituent; and an aromatic heterocyclic group having 6 to 30 carbon atoms which may have a substituent. R 1 and R 2 are either directly bonded to each other in a single bond, or have a ring structure selected from the group consisting of an oxygen atom, a sulfur atom and a methylene group. It may be formed. When R 1 and R 2 have a substituent, the total carbon number of R 1 and R 2 described above preferably includes the substituent.
R1及びR2の脂肪族炭化水素基としては、メチル基、エチル基、n−プロピル基、i−プロピル基、n−ブチル基、t−ブチル基、n−ペンチル基、i−ペンチル基、n−ヘキシル基、i−ヘキシル基、n−オクチル基、i−オクチル基、2−エチルヘキシル基及びn−デシル基等のアルキル基;該アルキル基の炭素−炭素一重結合の少なくとも1つが、炭素−炭素二重結合又は炭素−炭素三重結合に置換されたアルケニル基又はアルキニル基;等を挙げることができる。
R1及びR2の脂肪族炭化水素基中の少なくとも1つのメチレン基が2価のヘテロ原子含有基で置換されていてもよい。2価のヘテロ原子含有基としては、−O−、−CO−、−COO−、−OCO−、−O−CO−O−、−S−、−SO−及び−SO2−等からなる群より選ばれる基等が挙げられる。R1及びR2がヘテロ原子含有基を有し、該ヘテロ原子含有置換基がアルキル基又はアリール基等の置換基を有する場合、それらの置換基を含めた総炭素数が、上述した炭素数であることが好ましい。Examples of the aliphatic hydrocarbon groups of R 1 and R 2 include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, t-butyl group, n-pentyl group and i-pentyl group. Alkyl groups such as n-hexyl group, i-hexyl group, n-octyl group, i-octyl group, 2-ethylhexyl group and n-decyl group; at least one of the carbon-carbon single bonds of the alkyl group is carbon- An alkenyl group or an alkynyl group substituted with a carbon double bond or a carbon-carbon triple bond; and the like can be mentioned.
At least one methylene group in the aliphatic hydrocarbon groups of R 1 and R 2 may be substituted with a divalent heteroatom-containing group. The divalent heteroatom-containing group is a group consisting of -O-, -CO-, -COO-, -OCO-, -O-CO-O-, -S-, -SO-, -SO 2-, and the like. Examples are selected from the above. When R 1 and R 2 have a heteroatom-containing group and the heteroatom-containing substituent has a substituent such as an alkyl group or an aryl group, the total number of carbon atoms including those substituents is the above-mentioned carbon number. Is preferable.
R1及びR2の脂環式炭化水素基としては、単環式脂肪族炭化水素基、スピロ環式脂肪族炭化水素基、縮合多環式脂肪族炭化水素基、及び、これらのうち少なくとも2つ以上の基が直接に一重結合で又は二重結合を含む連結基で結合された連結多環脂肪族炭化水素基等が挙げられる。
上記単環式脂肪族炭化水素基としては、シクロプロピル基、シクロペンチル基及びシクロヘキシル基等が挙げられる。The alicyclic hydrocarbon groups of R 1 and R 2 include monocyclic aliphatic hydrocarbon groups, spirocyclic aliphatic hydrocarbon groups, condensed polycyclic aliphatic hydrocarbon groups, and at least 2 of these. Examples thereof include linked polycyclic aliphatic hydrocarbon groups in which one or more groups are directly bonded by a single bond or a linking group containing a double bond.
Examples of the monocyclic aliphatic hydrocarbon group include a cyclopropyl group, a cyclopentyl group and a cyclohexyl group.
上記スピロ環式脂肪族炭化水素基としては、スピロ[3,4]オクタン及びスピロビシクロペンタン等が挙げられる。
上記縮合多環式脂肪族炭化水素基としては、ノルボルナン、トリシクロデカン、テトラシクロドデカン及びアダマンタン等の2環以上の単環炭化水素が橋かけとなる骨格を有するもの等が挙げられる。
また、R1及びR2の脂環式炭化水素基中の少なくとも1つのメチレン基が上記2価のヘテロ原子含有基で置換されていてもよい。Examples of the spirocyclic aliphatic hydrocarbon group include spiro [3,4] octane and spirobicyclopentane.
Examples of the condensed polycyclic aliphatic hydrocarbon group include those having a skeleton in which two or more monocyclic hydrocarbons such as norbornane, tricyclodecane, tetracyclododecane and adamantane are bridged.
Further, at least one methylene group in the alicyclic hydrocarbon groups of R 1 and R 2 may be substituted with the divalent heteroatom-containing group.
R1及びR2の芳香族炭化水素基としては、単環芳香族炭化水素基及び該単環芳香族炭化水素が少なくとも2環縮合した縮合多環芳香族炭化水素基等を挙げることができる。これら芳香族炭化水素基は、上記置換基を有していてもよい。Examples of the aromatic hydrocarbon groups of R 1 and R 2 include monocyclic aromatic hydrocarbon groups and condensed polycyclic aromatic hydrocarbon groups obtained by condensing at least two rings of the monocyclic aromatic hydrocarbons. These aromatic hydrocarbon groups may have the above-mentioned substituents.
上記単環芳香族炭化水素基としては、シクロペンテン及びベンゼン等の骨格を有する基が挙げられる。 Examples of the monocyclic aromatic hydrocarbon group include groups having a skeleton such as cyclopentene and benzene.
上記縮合多環芳香族炭化水素基としては、インデン、ナフタレン、アズレン、アントラセン、フェナントレン、ナフタセン及びフルオレン等の骨格を有する基が挙げられる。
R1及びR2は、芳香族複素環基であってもよい。芳香族複素環基としては、フラン、チオフェン、ピロール、イミダゾール、ピラン、ピリジン、ピリミジン、ピラジン、インドール、プリン、キノリン、イソキノリン、クロメン、チアントレン、ジベンゾチオフェン、フェノチアジン、フェノキサジン、キサンテン、アクリジン、フェナジン及びカルバゾール等の骨格を有する1価の基が挙げられる。Examples of the condensed polycyclic aromatic hydrocarbon group include groups having a skeleton such as indene, naphthalene, azulene, anthracene, phenanthrene, naphthalene and fluorene.
R 1 and R 2 may be aromatic heterocyclic groups. Aromatic heterocyclic groups include furan, thiophene, pyrrole, imidazole, pyran, pyridine, pyrimidine, pyrazine, indole, purine, quinoline, isoquinoline, chromen, thianthrene, dibenzothiophene, phenothiazine, phenoxazine, xanthene, aclysine, phenazine and Examples thereof include monovalent groups having a skeleton such as carbazole.
上記R1及びR2が互いに単結合で直接結合して互いに環構造を形成してもよい。例えば、R1及びR2の2つで、シクロペンタン骨格、シクロヘキサン骨格、アダマンタン骨格等を形成してもよい。また、上記R1及びR2が互いに、酸素原子、硫黄原子及びメチレン基からなる群より選択されるいずれかを介して環構造を形成しても良い。The above R 1 and R 2 may be directly bonded to each other by a single bond to form a ring structure with each other. For example, R 1 and R 2 may form a cyclopentane skeleton, a cyclohexane skeleton, an adamantane skeleton, or the like. Further, R 1 and R 2 may form a ring structure with each other via any one selected from the group consisting of an oxygen atom, a sulfur atom and a methylene group.
R1及びR2が有してもよい置換基としては、直鎖又は環状のアルキル基;該アルキル基中の少なくとも1つの水素原子がフッ素原子に置換されたフッ化アルキル基;アルコキシ基;アシル基;アルコキシカルボニル基;アリーロキシ基;ホスフィノ基;シリル基;上記アルキル基の少なくとも1つのメチレン基に代えて上記ヘテロ原子含有基を骨格に含んだアルキル基;アリール基;ヘテロアリール基;ヒドロキシ基;ハロゲン原子;カルボキシ基;等が挙げられる。The substituents that R 1 and R 2 may have include a linear or cyclic alkyl group; an alkyl fluoride group in which at least one hydrogen atom in the alkyl group is substituted with a fluorine atom; an alkoxy group; an acyl. Group; alkoxycarbonyl group; aryloxy group; phosphino group; silyl group; alkyl group containing the hetero atom-containing group in the skeleton instead of at least one methylene group of the alkyl group; aryl group; heteroaryl group; hydroxy group; Halogen atom; carboxy group; etc. may be mentioned.
上記構造単位(I)は酸解離能を有することが好ましい。上記構造単位(I)が酸解離能を有するために、上記4級炭素の隣の炭素原子に水素原子を有することが好ましい。つまり、R1及びR2中の上記4級炭素の隣となる炭素原子、並びに、R3中の上記4級炭素の隣となる炭素原子のうちの少なくとも1つは、少なくとも1つの水素原子を有することが好ましい。The structural unit (I) preferably has an acid dissociation ability. Since the structural unit (I) has an acid dissociation ability, it is preferable that the carbon atom next to the quaternary carbon has a hydrogen atom. That is, at least one of the carbon atoms next to the quaternary carbon in R 1 and R 2 and the carbon atom next to the quaternary carbon in R 3 has at least one hydrogen atom. It is preferable to have.
R3は、置換基を有してもよい、ラクトン骨格、スルトン骨格及びラクタム骨格からなる群より選択される少なくともいずれかを含む炭素数3〜15の1価の橋かけ脂環式炭化水素基である。ラクトン骨格は環内に−OC(=O)−基を含む環状エステルである。スルトン骨格は環内に−OS(=O)2−基を含む環状スルホン酸エステルである。ラクタム骨格はカルボキシル基とアミノ基が脱水縮合して環を成したものである。
R3としては、これら骨格の少なくともいずれかを含み、且つ橋かけ環構造を有するものであれば特に制限はない。R3は、上記橋かけ環構造に加えて、さらに他の環構造を有するスピロ環式基及び縮合多環式基を有していてもよい。R 3 is a monovalent alicyclic hydrocarbon group having 3 to 15 carbon atoms and containing at least one selected from the group consisting of a lactone skeleton, a sultone skeleton and a lactam skeleton, which may have a substituent. Is. The lactone backbone is a cyclic ester containing a -OC (= O) -group in the ring. The sultone skeleton is a cyclic sulfonic acid ester containing a −OS (= O) 2-group in the ring. The lactam skeleton is a ring formed by dehydration condensation of a carboxyl group and an amino group.
R 3 is not particularly limited as long as it contains at least one of these skeletons and has a bridging ring structure. In addition to the above-mentioned bridged ring structure, R 3 may have a spiro-cyclic group having another ring structure and a condensed polycyclic group.
本発明のいくつかの態様において「橋かけ環構造」とは、ラクトン骨格、スルトン骨格及びラクタム骨格からなる群より選択される少なくともいずれかの骨格のうち、隣り合っていない2つの頂点が環で共有された構造を指す。上記骨格中の隣り合う2つの頂点が環を共有した縮合環は「橋かけ環構造」には含まない。しかしながら、ラクトン骨格等と縮合した環構造において、橋かけ構造を有していれば、本発明のいくつかの態様における「橋かけ環構造」に相当するものとする。
橋かけ環構造における橋かけを構成する環は、炭素原子からなるものであってもよいが、酸素原子及び硫黄原子等のヘテロ原子を含む骨格で構成される環であってもよい。In some aspects of the invention, the "bridged ring structure" is defined as a ring in which two non-adjacent vertices of at least one of the skeletons selected from the group consisting of a lactone skeleton, a sultone skeleton and a lactam skeleton are rings. Refers to a shared structure. A fused ring in which two adjacent vertices in the skeleton share a ring is not included in the "bridged ring structure". However, if the ring structure condensed with the lactone skeleton or the like has a bridging structure, it corresponds to the "crosslinked ring structure" in some aspects of the present invention.
The ring constituting the bridge in the bridged ring structure may be composed of a carbon atom, or may be a ring composed of a skeleton containing a hetero atom such as an oxygen atom and a sulfur atom.
構造単位(I)は、ラクトン骨格、スルトン骨格及びラクタム骨格の少なくともいずれかを含む橋かけ脂環式炭化水素基をR3として有することで、極性と疎水性のバランスに優れるため、上記構造単位(I)を有するポリマーを感放射線性組成物成分として用いると、感放射線性酸発生剤の酸拡散性を抑制でき、解像度が向上し、LWR性能、及びEL性能をより向上させることがきる。
また、構造単位(I)はバルキーであるため、感放射線性酸発生剤の酸拡散性を抑制でき、それにより解像度を高めることができる。The structural unit (I) has a bridging alicyclic hydrocarbon group containing at least one of a lactone skeleton, a sultone skeleton, and a lactam skeleton as R 3 , and thus has an excellent balance between polarity and hydrophobicity. When the polymer having (I) is used as a component of the radiation-sensitive composition, the acid diffusivity of the radiation-sensitive acid generator can be suppressed, the resolution can be improved, and the LWR performance and the EL performance can be further improved.
Further, since the structural unit (I) is bulky, the acid diffusivity of the radiation-sensitive acid generator can be suppressed, thereby increasing the resolution.
R3は飽和脂環式炭化水素基だけでなく、炭素−炭素一重結合の少なくとも1つが、二重結合又は三重結合に置換された基であってもよい。上記構造単位(I)は酸解離能を有することが好ましいため、上記4級炭素の隣の炭素原子に水素原子を有することが好ましい。つまり、R3中の上記4級炭素の隣となる炭素原子は水素原子を少なくとも1つ有することが好ましい。R1及びR2中の上記4級炭素の隣となる炭素原子に少なくとも1つの水素原子を有する場合は、この限りでない。R 3 may be a saturated alicyclic hydrocarbon group as well as a group in which at least one carbon-carbon single bond is substituted with a double bond or a triple bond. Since the structural unit (I) preferably has an acid dissociation ability, it is preferable that the carbon atom next to the quaternary carbon has a hydrogen atom. That is, it is preferable that the carbon atom next to the quaternary carbon in R 3 has at least one hydrogen atom. This does not apply when the carbon atom adjacent to the quaternary carbon in R 1 and R 2 has at least one hydrogen atom.
上記R3のラクトン骨格を含む橋かけ脂環式炭化水素基としては、下記に示されるものが挙げられる。下記式中、**で示される部分は、上記式(1)中の4級炭素へ結合する部分である。Examples of the cross-linked alicyclic hydrocarbon group containing the lactone skeleton of R 3 include those shown below. In the following formula, the portion represented by ** is the portion bonded to the quaternary carbon in the above formula (1).
上記に示されるラクトン骨格に代えて、スルトン骨格及びラクタム骨格を有するものであってもよい。また、本発明の一つの態様のポリマーにおけるR3は、これらの骨格を複数組み合わせて有したものであってもよい。
R3としては、ラクトン骨格を含む橋かけ脂環式炭化水素基であることが好ましい。Instead of the lactone skeleton shown above, it may have a sultone skeleton and a lactam skeleton. Further, R 3 in the polymer of one aspect of the present invention may have a plurality of these skeletons in combination.
R 3 is preferably a cross-linked alicyclic hydrocarbon group containing a lactone skeleton.
R3が有してもよい置換基としては、直鎖又は環状のアルキル基;該アルキル基中の少なくとも1つの水素原子がフッ素原子に置換されたフッ化アルキル基;該アルキル基の少なくとも1つのメチレン基に代えて上記ヘテロ原子含有基を骨格に含んだアルキル基;アリール基;ヘテロアリール基;ヒドロキシ基;ハロゲン原子;等が挙げられる。R3が置換基を有する場合、R3の上記した総炭素数は置換基を含めたものであることが好ましい。The substituent that R 3 may have is a linear or cyclic alkyl group; a fluorinated alkyl group in which at least one hydrogen atom in the alkyl group is substituted with a fluorine atom; at least one of the alkyl groups. Examples thereof include an alkyl group containing the heteroatom-containing group in the skeleton instead of the methylene group; an aryl group; a heteroaryl group; a hydroxy group; a halogen atom; and the like. When R 3 has a substituent, the above-mentioned total carbon number of R 3 preferably includes the substituent.
Xは、ポリマーを構成する主鎖と上記式(1)中のR1〜R3に結合する4級炭素とを結合する単結合又は2価の連結基であれば特に制限はないが、例えば、2価の連結基としてはカルボニルオキシ基;オキシ基;アルカンジイル基及びアレーンジイル基の少なくとも1つと、カルボニルオキシ基及びオキシ基の少なくとも1つとを適宜組み合わせた2価の有機基;等からなる群より選択されるいずれかであることが好ましい。
Xとしては、容易に合成できる点からカルボニルオキシ基等が好ましい。X is not particularly limited as long as it is a single bond or a divalent linking group that bonds the main chain constituting the polymer and the quaternary carbon bonded to R 1 to R 3 in the above formula (1), but for example. The divalent linking group includes a carbonyloxy group; an oxy group; a divalent organic group in which at least one of an alkandiyl group and an arenediyl group and at least one of a carbonyloxy group and an oxy group are appropriately combined; and the like. It is preferably one of the more selected.
As X, a carbonyloxy group or the like is preferable because it can be easily synthesized.
上記構造単位(I)は、下記に示す重合性基を含む基が上記式(1)中の4級炭素に結合した化合物から構成されることが好ましい。該重合性基を含む基に上記式(1)のXが含まれていてもよい。
上記重合性基として例えば、ビニル基、アリル基、アクリロイル基、メタクリロイル基、フルオロビニル基、ジフルオロビニル基、トリフルオロビニル基、ジフルオロトリフルオロメチルビニル基、トリフルオロアリル基、パーフルオロアリル基、トリフルオロメチルアクリロイル基、ノニルフルオロブチルアクリロイル基、ビニルエーテル基、含フッ素ビニルエーテル基、アリルエーテル基、含フッ素アリルエーテル基、スチリル基、ビニルナフチル基、含フッ素スチリル基、含フッ素ビニルナフチル基、ノルボルニル基、含フッ素ノルボルニル基、シリル基等が挙げられる。上記重合性基は置換基を有していてもよく、該置換基としては例えば、炭素数1〜5のアルキル基、アルコキシ基、ヒドロキシ基、チオール基、アミノ基、フェニル基等の1価の基又はエーテル結合、フェニレン基等の2価の基が挙げられる。The structural unit (I) is preferably composed of a compound in which a group containing a polymerizable group shown below is bonded to a quaternary carbon in the above formula (1). The group containing the polymerizable group may contain X of the above formula (1).
Examples of the polymerizable group include a vinyl group, an allyl group, an acryloyl group, a methacryloyl group, a fluorovinyl group, a difluorovinyl group, a trifluorovinyl group, a difluorotrifluoromethylvinyl group, a trifluoroallyl group, a perfluoroallyl group, and a tri. Fluoromethylacryloyl group, nonylfluorobutylacryloyl group, vinyl ether group, fluorine-containing vinyl ether group, allyl ether group, fluorine-containing allyl ether group, styryl group, vinylnaphthyl group, fluorine-containing styryl group, fluorine-containing vinylnaphthyl group, norbornyl group, Examples thereof include a fluorine-containing norbornyl group and a silyl group. The polymerizable group may have a substituent, and the substituent may be, for example, a monovalent group such as an alkyl group having 1 to 5 carbon atoms, an alkoxy group, a hydroxy group, a thiol group, an amino group or a phenyl group. Examples thereof include a divalent group such as a group or an ether bond or a phenylene group.
上記構造単位(I)は、下記式(2)で示されるものであることが好ましい。 The structural unit (I) is preferably represented by the following formula (2).
上記式(2)中、R1、R2、R3及びXは上記式(1)と同様であり、R4は、水素原子;フッ素原子;直鎖、分岐又は環状の炭素数1〜6のアルキル基;及び、直鎖、分岐又は環状の炭素数1〜6のアルケニル基;からなる群より選択されるいずれかであり、該R4中の上記アルキル基及びアルケニル基中の少なくとも1つの水素原子がフッ素原子に置換されていてもよい。In the above formula (2), R 1 , R 2 , R 3 and X are the same as those in the above formula (1), and R 4 is a hydrogen atom; a fluorine atom; a linear, branched or cyclic carbon number 1 to 6. and straight-chain alkenyl group having 1 to 6 carbon atoms, branched or cyclic; alkyl group is any one selected from the group consisting of, at least one in the alkyl group and alkenyl group in the R 4 The hydrogen atom may be replaced with a fluorine atom.
R4の炭素数1〜6の直鎖アルキル基としては、メチル基、エチル基、n−プロピル基、n−ブチル基、n−ペンチル基及びn−ヘキシル基等が挙げられる。
R4の炭素数1〜6の分岐アルキル基としては、イソプロピル基、イソブチル基、tert−ブチル基、イソペンチル基、tert−ペンチル基、2−エチルエキシル基等が挙げられる。
R4の炭素数1〜6の環状のアルキル基としては、シクロプロピル基、シクロブチル基、シクロペンチル基及びシクロヘキシル基等が挙げられる。Examples of the linear alkyl group having 1 to 6 carbon atoms of R 4 include a methyl group, an ethyl group, an n-propyl group, an n-butyl group, an n-pentyl group and an n-hexyl group.
Examples of the branched alkyl group having 1 to 6 carbon atoms of R 4 include an isopropyl group, an isobutyl group, a tert-butyl group, an isopentyl group, a tert-pentyl group and a 2-ethylexyl group.
Examples of the cyclic alkyl group having 1 to 6 carbon atoms of R 4 include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group and a cyclohexyl group.
R4の直鎖、分岐又は環状の炭素数1〜6のアルケニル基としては、上記に示す直鎖アルキル基、分岐アルキル基及び環状アルキル基の炭素−炭素一重結合の少なくとも1つが、炭素−炭素二重結合に置換されたものが挙げられる。
また、R4の上記アルキル基及びアルケニル基中の少なくとも1つの水素原子がフッ素原子に置換されたフッ化アルキル基及びフッ化アルケニル基であってもよい。全部の水素原子がフッ素原子に置換されたものであってもよい。R4中の少なくとも1つの水素原子がフッ素原子に置換されたR4としては、フッ化アルキル基としては、トリフルオロメチル基等が好ましい。フッ素以外の置換基を有していても良い。As the linear, branched or cyclic alkenyl group having 1 to 6 carbon atoms of R 4 , at least one of the carbon-carbon single bonds of the linear alkyl group, the branched alkyl group and the cyclic alkyl group shown above is carbon-carbon. Examples thereof include those substituted with double bonds.
Further, it may be an alkyl fluoride group or an alkenyl fluoride group in which at least one hydrogen atom in the alkyl group and the alkenyl group of R 4 is replaced with a fluorine atom. All hydrogen atoms may be replaced with fluorine atoms. As R 4 in which at least one hydrogen atom in R 4 is replaced with a fluorine atom, a trifluoromethyl group or the like is preferable as the alkyl fluoride group. It may have a substituent other than fluorine.
上記構造単位(I)として、好ましいものを下記に例示する。下記式中、*で示される部分は、上記式(3)中のYへ結合する部分である。しかしながら、本発明はこれに限定されない。 Preferred structural units (I) are illustrated below. In the following formula, the part represented by * is the part connected to Y in the above formula (3). However, the present invention is not limited to this.
(その他の構造単位)
本発明のいくつかの態様であるポリマーは、上記構造単位(I)の他に、本発明のいくつかの態様の効果を損なわない範囲で、感放射線性組成物として通常用いられる構造単位を有していてもよい。
その他の構造単位としては、酸解離性基を有する構造単位(II)が挙げられる。上記酸解離性基は、酸の作用により酸解離性基の構造中の少なくとも一部の結合が開裂し得る酸解離能を有し、保護基の解離により極性基を生じる基である。上記極性基としては、ヒドロキシ基、カルボキシ基、アミノ基及びスルホ基等が挙げられ、ヒドロキシ基及びカルボキシ基が好ましい。(Other structural units)
In addition to the structural unit (I), the polymer according to some aspects of the present invention has a structural unit usually used as a radiation-sensitive composition as long as the effects of some aspects of the present invention are not impaired. You may be doing it.
Examples of other structural units include structural units (II) having an acid dissociative group. The acid dissociative group is a group that has an acid dissociation ability that allows at least a part of the bonds in the structure of the acid dissociative group to be cleaved by the action of an acid and produces a polar group by dissociation of a protecting group. Examples of the polar group include a hydroxy group, a carboxy group, an amino group and a sulfo group, and a hydroxy group and a carboxy group are preferable.
構造単位(II)として、例えば、下記式(5)の***部分に酸解離性基を有するものが挙げられる。酸解離性基を有する構造単位(II)としてより具体的には、下記式(6a)で表される構造単位(IIa)及び下記式(6b)で表される構造単位(IIb)等が挙げられる。 Examples of the structural unit (II) include those having an acid dissociative group in the *** portion of the following formula (5). More specifically, the structural unit (II) having an acid dissociative group includes a structural unit (IIa) represented by the following formula (6a), a structural unit (IIb) represented by the following formula (6b), and the like. Be done.
上記式(6a)及び(6b)中、R4及びXは上記式(2)と同様のものが挙げられる。ただし、R4及びXは、上記式(6a)及び(6b)と、上記式(2)と、で同じであっても異なっていてもよい。
上記式(6a)で表される構造単位(IIa)のときは、Xはカルボニルオキシ基、オキシ基又はこれらの基を少なくとも1つ含む2価の有機基であることが好ましい。
R5〜R7は1価の炭化水素基であって、R5及びR6は互いに結合して環を形成してもよい。R5〜R7の炭化水素基としては、上記式(1)のR1及びR2と同様のものが挙げられる。In the formula (6a) and (6b), R 4 and X are the same as in the above formula (2). However, R 4 and X may be the same or different in the above formulas (6a) and (6b) and the above formula (2).
In the case of the structural unit (IIa) represented by the above formula (6a), X is preferably a carbonyloxy group, an oxy group or a divalent organic group containing at least one of these groups.
R 5 to R 7 are monovalent hydrocarbon groups, and R 5 and R 6 may be bonded to each other to form a ring. Examples of the hydrocarbon groups of R 5 to R 7 include those similar to those of R 1 and R 2 of the above formula (1).
R8、R9はそれぞれ独立に水素原子又は1価の炭化水素基であり、R10は1価の炭化水素基であって、R8及びR9のいずれかと結合して環を形成してもよい。R8〜R10の炭化水素基としては、上記式(1)のR1及びR2と同様のものが挙げられる。R10がR8又はR9のいずれかと結合して環を形成する場合、該環式基としては、4〜7員環が好ましく、テトラヒドロピラニル基、テトロヒドロフラニル基等が具体的に挙げられる。R 8 and R 9 are independently hydrogen atoms or monovalent hydrocarbon groups, and R 10 is a monovalent hydrocarbon group, which is bonded to either R 8 or R 9 to form a ring. May be good. Examples of the hydrocarbon groups of R 8 to R 10 include those similar to those of R 1 and R 2 of the above formula (1). When R 10 is bonded to either R 8 or R 9 to form a ring, the cyclic group is preferably a 4- to 7-membered ring, specifically a tetrahydropyranyl group, a tetrohydrofuranyl group or the like. Can be mentioned.
上記構造単位(IIa)及び構造単位(IIb)として、例えば下記が挙げられる。 Examples of the structural unit (IIa) and the structural unit (IIb) include the following.
上記構造単位(IIa)及び構造単位(IIb)を構成するモノマーとして、例えば下記が挙げられる。下記式中、Rαは上記式(5)のR4と同様である。Examples of the monomers constituting the structural unit (IIa) and the structural unit (IIb) include the following. In the following formula, R α is the same as R 4 in the above formula (5).
本発明のいくつかの態様であるポリマーは、上記構造単位(I)及び構造単位(II)の他に、ラクトン骨格、スルトン骨格及びラクタム骨格からなる群より選択される少なくともいずれかを含む基を有する構造単位(III)を有していてもよい。該構造単位(III)は構造単位(I)とは異なるものであり、下記式(7)で示されるものが挙げられる。 In addition to the structural unit (I) and the structural unit (II), the polymer according to some aspects of the present invention contains a group containing at least one selected from the group consisting of a lactone skeleton, a sultone skeleton and a lactam skeleton. It may have a structural unit (III) to have. The structural unit (III) is different from the structural unit (I), and examples thereof include those represented by the following formula (7).
上記式(7)中、R4及びXは上記式(2)と同様のものが挙げられる。R11は、ラクトン骨格、スルトン骨格及びラクタム骨格からなる群より選択される少なくともいずれかを含む基である。構造単位(III)を有することで、密着性を向上することができ、その結果、感放射線性組成物のEL特性、LWR特性及びCDU特性を向上させることができる。
R11基が有するラクトン骨格、スルトン骨格及びラクタム骨格は、該骨格内で橋かけ構造を有してもよく、また上記骨格に加えてさらに他の環構造を有するスピロ環式基及び縮合多環式基等であってもよい。下記に示したラクトン骨格、スルトン骨格及びラクタム骨格はいずれも橋かけ構造を有するが、橋かけ構造を有していないものも使用可能である。
R11基としては、下記に示されるものが挙げられる。下記式中、**で示される部分は、上記式(7)中のXへ結合する部分である。In the above formula (7), R 4 and X are the same as those in the above formula (2). R 11 is a group containing at least one selected from the group consisting of a lactone skeleton, a sultone skeleton and a lactam skeleton. By having the structural unit (III), the adhesion can be improved, and as a result, the EL property, the LWR property, and the CDU property of the radiation-sensitive composition can be improved.
The lactone skeleton, sultone skeleton, and lactam skeleton of the R 11 group may have a bridging structure within the skeleton, and a spirocyclic group and a condensed polycycle having an additional ring structure in addition to the above skeleton. It may be a formula group or the like. The lactone skeleton, sultone skeleton, and lactam skeleton shown below all have a bridging structure, but those without a bridging structure can also be used.
Examples of the R 11 group include those shown below. In the following formula, the part represented by ** is the part connected to X in the above formula (7).
上記構造単位(I)〜(III)以外に、上記ポリマーは水酸基又はシアノ基を有する構造単位(以下、「構造単位(IV)」ともいう)を有することができる。これにより基板密着性、現像液親和性を向上させることができる。水酸基又はシアノ基を有する構造単位は、水酸基又はシアノ基で置換された脂環炭化水素構造を有する構造単位であることが好ましく、酸分解性基を有しないことが好ましい。水酸基又はシアノ基で置換された脂環炭化水素構造に於ける、脂環炭化水素構造としては、アダマンチル基、ジアマンチル基、ノルボルナン基が好ましく、アダマンチル基がより好ましい。また、水酸基で置換されていることが好ましく、少なくとも一つの水酸基で置換されたアダマンチル基を有する構造単位を含有することがより好ましい。
特に、発生酸の拡散を抑制する観点から、ヒドロキシアダマンチル基又はジヒドロキシアダマンチル基を有する構造単位を含有することが最も好ましい。
水酸基又はシアノ基を有する構造単位(IV)の具体例を以下に挙げるが、本発明はこれらに限定されない。In addition to the structural units (I) to (III), the polymer can have a structural unit having a hydroxyl group or a cyano group (hereinafter, also referred to as “structural unit (IV)”). This makes it possible to improve substrate adhesion and developer affinity. The structural unit having a hydroxyl group or a cyano group is preferably a structural unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group, and preferably does not have an acid-degradable group. In the alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group, the alicyclic hydrocarbon structure is preferably an adamantyl group, a diamantyl group, or a norbornane group, and more preferably an adamantyl group. Further, it is preferably substituted with a hydroxyl group, and more preferably contains a structural unit having an adamantyl group substituted with at least one hydroxyl group.
In particular, from the viewpoint of suppressing the diffusion of the generated acid, it is most preferable to contain a structural unit having a hydroxyadamantyl group or a dihydroxyadamantyl group.
Specific examples of the structural unit (IV) having a hydroxyl group or a cyano group are given below, but the present invention is not limited thereto.
上記ポリマーは、水酸基又はシアノ基を有する構造単位を含有していても、含有していなくてもよいが、上記ポリマーが構造単位(IV)を含有する場合、水酸基又はシアノ基を有する構造単位(IV)の含有量は、上記ポリマー中の全構造単位に対し、1〜50モル%が好ましく、より好ましくは3〜50モル%、更に好ましくは3〜45モル%、最も好ましくは5〜45モル%である。
上記ポリマーは、上記構造単位(I)〜(IV)以外の構造単位を有していても良い。The polymer may or may not contain a structural unit having a hydroxyl group or a cyano group, but when the polymer contains a structural unit (IV), a structural unit having a hydroxyl group or a cyano group ( The content of IV) is preferably 1 to 50 mol%, more preferably 3 to 50 mol%, still more preferably 3 to 45 mol%, and most preferably 5 to 45 mol% with respect to all the structural units in the polymer. %.
The polymer may have structural units other than the structural units (I) to (IV).
本発明の一つの態様におけるポリマーは、各構造単位の比率は特に制限はないが、上記構造単位(I)は全体の10〜70モル%であることが好ましい。上記構造単位(II)は10〜70モル%であることが好ましく、上記構造単位(III)は10〜70モル%であることが好ましく、上記構造単位(IV)は1〜50モル%であることが好ましい。 In the polymer according to one aspect of the present invention, the ratio of each structural unit is not particularly limited, but the structural unit (I) is preferably 10 to 70 mol% of the whole. The structural unit (II) is preferably 10 to 70 mol%, the structural unit (III) is preferably 10 to 70 mol%, and the structural unit (IV) is 1 to 50 mol%. Is preferable.
本発明の一つの態様におけるポリマーは、上記配合割合となるように上記それぞれの構造単位を構成するモノマー成分と、ラジカル重合開始剤等を用い、適当な溶媒中で通常の方法で重合し、必要により精製することにより得ることができる。例えば、上記構造単位(I)〜(IV)に対応する各モノマー成分と、ラジカル重合開始剤とを溶媒に溶解させ加熱することにより重合を行う一括重合法、加熱溶剤に各モノマー成分とラジカル重合開始剤等を含む溶液を数時間かけて滴下して加える滴下重合法等が挙げられる。
反応に用いる溶媒としては、重合反応に通常用いられる溶媒であれば特に制限はないが、本発明の一つの態様の感放射線性組成物に用いられる同一の溶媒を用いて重合することが好ましい。ラジカル重合開始剤としてはアゾ系開始剤が好ましい。
反応のモノマー成分濃度は特に制限はないが、5〜50質量%が好ましい。反応温度は特に制限はないが、1〜150℃であることが好ましい。
反応終了後、必要により、液々抽出法、限外濾過法、沈殿法等の通常の精製方法により精製して、ポリマーを得る。The polymer according to one aspect of the present invention is required to be polymerized by a usual method in an appropriate solvent using the monomer components constituting each of the above structural units and a radical polymerization initiator or the like so as to have the above-mentioned compounding ratio. It can be obtained by purifying with. For example, a batch polymerization method in which each monomer component corresponding to the structural units (I) to (IV) and a radical polymerization initiator are dissolved in a solvent and heated to carry out polymerization, and radical polymerization with each monomer component in a heating solvent. Examples thereof include a drop polymerization method in which a solution containing an initiator or the like is added dropwise over several hours.
The solvent used in the reaction is not particularly limited as long as it is a solvent usually used in the polymerization reaction, but it is preferable to polymerize using the same solvent used in the radiation-sensitive composition of one aspect of the present invention. As the radical polymerization initiator, an azo-based initiator is preferable.
The monomer component concentration of the reaction is not particularly limited, but is preferably 5 to 50% by mass. The reaction temperature is not particularly limited, but is preferably 1 to 150 ° C.
After completion of the reaction, if necessary, purification is performed by a usual purification method such as a liquid extraction method, an ultrafiltration method, or a precipitation method to obtain a polymer.
<2>化合物
本発明の一つの態様における化合物は、上記ポリマーの構造単位(I)を構成するためのモノマーであり、下記式(3)で示される。<2> Compound The compound in one embodiment of the present invention is a monomer for forming the structural unit (I) of the polymer, and is represented by the following formula (3).
上記式(3)中、R1〜R3及びXは、それぞれ独立して上記式(1)のR1〜R3及びXの選択肢から選択されるいずれかである。上記式(3)中、Yは重合性基を含む1価の基である。
Yの重合性基としては、該重合性基を有する化合物がラジカル重合等により重合することを可能とする基であり、たとえばエチレン性二重結合等の炭素原子間の多重結合を含む基をいう。重合性基としてより具体的には、例えば、ビニル基、アリル基、アクリロイル基、メタクリロイル基、フルオロビニル基、ジフルオロビニル基、トリフルオロビニル基、ジフルオロトリフルオロメチルビニル基、トリフルオロアリル基、パーフルオロアリル基、トリフルオロメチルアクリロイル基、ノニルフルオロブチルアクリロイル基、ビニルエーテル基、含フッ素ビニルエーテル基、アリルエーテル基、含フッ素アリルエーテル基、スチリル基、ビニルナフチル基、含フッ素スチリル基、含フッ素ビニルナフチル基、ノルボルニル基、含フッ素ノルボルニル基、シリル基等が挙げられる。Yが有する重合性基としては置換基を有していてもよいアルキレン基が好ましく、炭素数1〜20の直鎖状、分岐鎖状又は環状のアルキレン基又はこれらを組み合わせたアルキレン基が挙げられ、炭素数2〜10がより好ましい。置換基としては、例えば、炭素数1〜5のアルキル基、アルコキシ基、ヒドロキシ基、チオール基、アミノ基、フェニル基等の1価の基又はエーテル結合、フェニレン基等の2価の基が挙げられる。In the above formula (3), R 1 to R 3 and X are independently selected from the options of R 1 to R 3 and X in the above formula (1), respectively. In the above formula (3), Y is a monovalent group containing a polymerizable group.
The polymerizable group of Y is a group that enables the compound having the polymerizable group to be polymerized by radical polymerization or the like, and refers to a group containing multiple bonds between carbon atoms such as an ethylenic double bond. .. More specifically, the polymerizable group includes, for example, a vinyl group, an allyl group, an acryloyl group, a methacryloyl group, a fluorovinyl group, a difluorovinyl group, a trifluorovinyl group, a difluorotrifluoromethylvinyl group, a trifluoroallyl group, and a per. Fluoroallyl group, trifluoromethylacryloyl group, nonylfluorobutylacryloyl group, vinyl ether group, fluorine-containing vinyl ether group, allyl ether group, fluorine-containing allyl ether group, styryl group, vinylnaphthyl group, fluorine-containing styryl group, fluorine-containing vinylnaphthyl Examples thereof include a group, a norbornyl group, a fluorine-containing norbornyl group, and a silyl group. The polymerizable group of Y is preferably an alkylene group which may have a substituent, and examples thereof include a linear, branched or cyclic alkylene group having 1 to 20 carbon atoms or a alkylene group combining these. , 2 to 10 carbon atoms are more preferable. Examples of the substituent include a monovalent group such as an alkyl group having 1 to 5 carbon atoms, an alkoxy group, a hydroxy group, a thiol group, an amino group and a phenyl group, or a divalent group such as an ether bond and a phenylene group. Be done.
上記式(3)は下記式(4)で示されることが好ましい。 The above formula (3) is preferably represented by the following formula (4).
上記式(4)中、R1〜R3はそれぞれ独立して上記式(3)のR1〜R3の選択肢から選択されるいずれかである。R4は、水素原子;直鎖、分岐又は環状の炭素数1〜6のアルキル基;及び、直鎖、分岐又は環状の炭素数1〜6のアルケニル基;からなる群より選択されるいずれかであり、該R4中の上記アルキル基及びアルケニル基中の少なくとも1つの水素原子がフッ素原子に置換されていてもよい。In the above formula (4), R 1 to R 3 are each independently selected from the options of R 1 to R 3 in the above formula (3). R 4 is selected from the group consisting of a hydrogen atom; a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; and a linear, branched or cyclic alkenyl group having 1 to 6 carbon atoms; At least one hydrogen atom in the above-mentioned alkyl group and alkenyl group in the R 4 may be substituted with a fluorine atom.
本発明の一つの態様の化合物は、一般的な方法で合成可能である。例えば、上記式(3)で示される化合物のR3に対応する橋かけ脂環式炭化水素基、R1及びR2の基を有するアルコール誘導体と、(メタ)アクリル酸ハロゲン化物又は(メタ)アクリル酸とを公知の方法で反応させることにより合成することができる。しかしながら、上記化合物の合成はこれに限定されない。
上記式(3)で示される化合物のR3に対応するラクトン骨格等を含む橋かけ脂環式炭化水素基、R1及びR2を有するアルコール誘導体は、例えば、下記反応式に示す方法により合成可能である。下記反応式中、X1は塩素等のハロゲン原子である。nは1〜15の整数である。
詳しくは、例えば、上記式(3)で示される化合物のR1とR2とが連結して環構造を形成している場合、上記橋かけ脂環式炭化水素基を有する酸クロリド又はアルキルエステルをジブロモアルカン等のジハロゲンアルカンを用いて、グリニャール反応を行うことにより、得ることができる。The compounds of one aspect of the invention can be synthesized by conventional methods. For example, a bridging alicyclic hydrocarbon group corresponding to R 3 of the compound represented by the above formula (3), an alcohol derivative having a group of R 1 and R 2 , and a (meth) acrylic acid halide or (meth). It can be synthesized by reacting with acrylic acid by a known method. However, the synthesis of the above compounds is not limited to this.
An alcohol derivative having a cross-linked alicyclic hydrocarbon group, R 1 and R 2 , containing a lactone skeleton corresponding to R 3 of the compound represented by the above formula (3) is synthesized, for example, by the method shown in the following reaction formula. It is possible. In the following reaction formula, X 1 is a halogen atom such as chlorine. n is an integer of 1 to 15.
Specifically, for example, when R 1 and R 2 of the compound represented by the above formula (3) are linked to form a ring structure, the acid chloride or alkyl ester having the cross-linked alicyclic hydrocarbon group is formed. Can be obtained by carrying out a Grignard reaction using a dihalogenalkane such as dibromoalkane.
<3>感放射線性組成物
本発明の一つの態様の感放射線性組成物は、上記ポリマーと感放射線性酸発生剤とを含有することを特徴とする。
感放射線性酸発生剤としては、通常の感放射線性組成物に用いられるものであれば特に制限はなく、例えば、オニウム塩化合物、N−スルホニルオキシイミド化合物、ハロゲン含有化合物、ジアゾケトン化合物等が挙げられる。
オニウム塩化合物としては、スルホニウム塩、テトラヒドロチオフェニウム塩、ヨードニウム塩、ホスホニウム塩、ジアゾニウム塩、ピリジニウム塩等が挙げられる。
オニウム塩化合物のアニオンとしては、WO2011/093139号公報に記載のものが挙げられる。感放射線性酸発生剤として具体的には下記式(8)に示すアニオン構造を有するスルホン酸誘導体が好ましいが、これに限定されない。<3> Radiation-sensitive composition The radiation-sensitive composition according to one aspect of the present invention is characterized by containing the above-mentioned polymer and a radiation-sensitive acid generator.
The radiation-sensitive acid generator is not particularly limited as long as it is used in a normal radiation-sensitive composition, and examples thereof include an onium salt compound, an N-sulfonyloxyimide compound, a halogen-containing compound, and a diazoketone compound. Be done.
Examples of the onium salt compound include sulfonium salt, tetrahydrothiophenium salt, iodonium salt, phosphonium salt, diazonium salt, pyridinium salt and the like.
Examples of the anion of the onium salt compound include those described in WO2011 / 093139. Specifically, as the radiation-sensitive acid generator, a sulfonic acid derivative having an anionic structure represented by the following formula (8) is preferable, but the agent is not limited thereto.
R12COOCH2CH2CFHCF2SO3 − (8)
上記式(8)において、R12は、置換基を有していてもよい炭素数1〜20の1価の有機基を示す。上記有機基として、好ましくは、炭素数1〜20の下記式で表される基が挙げられる。
R13−(A−R14)m− (9) R 12 COOCH 2 CH 2 CFHCF 2 SO 3 - (8)
In the above formula (8), R 12 represents a monovalent organic group having 1 to 20 carbon atoms which may have a substituent. The organic group preferably includes a group represented by the following formula having 1 to 20 carbon atoms.
R 13- (A-R 14 ) m- (9)
上記式(9)において、R13は、直鎖状、分岐状又は環状の1価の脂肪族炭化水素基;1価の芳香族炭化水素基;並びに、−O−、−CO−、−COO−、−OCO−、−O−CO−O−、−NHCO−、−CONH−、−NH−CO−O−、−O−CO−NH−、−NH−、−N=、−S−、−SO−及び−SO2−からなる群より選ばれる少なくとも1種の基を骨格に含む1価の脂肪族複素環基又は1価の芳香族複素環基;から選ばれるいずれかの1価の基である。In the above formula (9), R 13 is a linear, branched or cyclic monovalent aliphatic hydrocarbon group; a monovalent aromatic hydrocarbon group; and -O-, -CO-, -COO. -, -OCO-, -O-CO-O-, -NHCO-, -CONH-, -NH-CO-O-, -O-CO-NH-, -NH-, -N =, -S-, Any monovalent group selected from a monovalent aliphatic heterocyclic group or a monovalent aromatic heterocyclic group containing at least one group in the skeleton selected from the group consisting of −SO − and −SO 2 −. It is a group.
また、Aは、各々独立に、直接結合;又は−O−、−CO−、−COO−、−OCO−、−O−CO−O−、−NHCO−、−CONH−、−NH−CO−O−、−O−CO−NH−、−NH−、−S−及び−CO−O−CH2−CO−O−からなる群より選ばれるいずれかの基である。In addition, A is directly bound to each other independently; or -O-, -CO-, -COO-, -OCO-, -O-CO-O-, -NHCO-, -CONH-, -NH-CO-. It is any group selected from the group consisting of O-, -O-CO-NH-, -NH-, -S- and -CO-O-CH 2-CO-O-.
R14は、各々独立に、直鎖状、分岐状又は環状の2価の脂肪族炭化水素基;2価の芳香族炭化水素基;並びに、−O−、−CO−、−COO−、−OCO−、−O−CO−O−、−NHCO−、−CONH−、−NH−CO−O−、−O−CO−NH−、−NH−、−N=、−S−、−SO−及び−SO2−からなる群より選ばれる少なくとも1種の基を骨格に含む2価の脂肪族複素環基又は2価の芳香族複素環基;より選ばれるいずれかの2価の基である。R 14 is an independently linear, branched or cyclic divalent aliphatic hydrocarbon group; a divalent aromatic hydrocarbon group; and -O-, -CO-, -COO-,-. OCO-, -O-CO-O-, -NHCO-, -CONH-, -NH-CO-O-, -O-CO-NH-, -NH-, -N =, -S-, -SO- A divalent aliphatic heterocyclic group or a divalent aromatic heterocyclic group containing at least one group selected from the group consisting of and −SO 2 − in the skeleton; any of the divalent groups selected from. ..
また、mは0又は1〜10の整数である。ただし、mが0のときR12が前記ヒドロキシル基を有し、mが1以上のときR12及びR13のうち少なくともいずれかが上記ヒドロキシル基を有する。mは0〜5が好ましく、0〜3がより好ましい。Further, m is 0 or an integer of 1 to 10. However, when m is 0, R 12 has the hydroxyl group, and when m is 1 or more, at least one of R 12 and R 13 has the hydroxyl group. m is preferably 0 to 5, more preferably 0 to 3.
なお、R12が置換基を有している場合、その置換基の炭素数も含めて、炭素数1〜200であることが好ましく、炭素数1〜100であることがより好ましく、炭素数1〜30であることがさらに好ましく、炭素数3〜30であることが特に好ましい。また、R12が置換基を有していることが好ましく、すなわち、R13及びR14が有する少なくとも1つの水素が該置換基で置換されていることが好ましい。When R 12 has a substituent, the number of carbon atoms including the carbon number of the substituent is preferably 1 to 200, more preferably 1 to 100, and the number of carbon atoms is 1. It is more preferably ~ 30, and particularly preferably 3 to 30 carbon atoms. Further, it is preferable that R 12 has a substituent, that is, at least one hydrogen of R 13 and R 14 is substituted with the substituent.
R12が有していてもよい上記置換基としては、ヒドロキシ基、カルボキシル基、アルコキシ基、アシル基、アルコキシカルボニル基、アリール基、アリーロキシ基、ホスフィノ基、アルキルチオ基及びアリールチオ基等を挙げることができるが、これらに制限されない。Examples of the substituent that R 12 may have include a hydroxy group, a carboxyl group, an alkoxy group, an acyl group, an alkoxycarbonyl group, an aryl group, an aryloxy group, a phosphino group, an alkylthio group and an arylthio group. Yes, but not limited to these.
感放射線性酸発生剤のアニオンとしては、上記式(8)に示すスルホン酸アニオン以外に、その他のスルホン酸アニオン、カルボン酸アニオン、イミドアニオン、メチドアニオン、カーボアニオン、ボレートアニオン、ハロゲンアニオン、リン酸アニオン、アンチモン酸アニオン、ヒ素酸アニオン等のアニオンが挙げられる。
より詳しくは、アニオンとして、ZDa−、(Rf)bPF(6−b) −、R15 cBD(4−c) −、R15 cGaD(4−c) −、R16SO3 −、(R16SO2)3C−又は(R16SO2)2N−で表されるアニオンが好ましく挙げられる。Rfの2個、R15の2個及びR16の2個はそれぞれ、互いに結合して環を形成してもよい。
Zは、リン原子、ホウ素原子又はアンチモン原子を表す。Dはハロゲン原子(フッ素原子が好ましい。)を表す。
Pはリン原子、Fはフッ素原子、Bはホウ素原子、Gaはガリウム原子を表す。
Sはイオウ原子、Oは酸素原子、Cは炭素原子、Nは窒素原子を表す。Examples of the anion of the radiation-sensitive acid generator include other sulfonic acid anions, carboxylic acid anions, imide anions, methide anions, carbo anions, borate anions, halogen anions, and phosphoric acids, in addition to the sulfonic acid anions represented by the above formula (8). Examples thereof include anions such as anions, antimonate anions, and arsenic anions.
More specifically, as an anion, ZD a-, (Rf) b PF (6-b) -, R 15 c BD (4-c) -, R 15 c GaD (4-c) -, R 16 SO 3 - , (R 16 SO 2 ) 3 C − or (R 16 SO 2 ) 2 N − anions are preferred. Two Rf, respectively two in two and R 16 of R 15, may be bonded to each other to form a ring.
Z represents a phosphorus atom, a boron atom or an antimony atom. D represents a halogen atom (preferably a fluorine atom).
P represents a phosphorus atom, F represents a fluorine atom, B represents a boron atom, and Ga represents a gallium atom.
S represents a sulfur atom, O represents an oxygen atom, C represents a carbon atom, and N represents a nitrogen atom.
Rfは、水素原子の80モル%以上がフッ素原子で置換されたアルキル基が好ましく、アルキル基としては炭素数1〜8のアルキル基が好ましい。フッ素置換によりRfとするアルキル基としては、直鎖アルキル基(メチル、エチル、プロピル、ブチル、ペンチル及びオクチル等)、分枝鎖アルキル基(イソプロピル、イソブチル、sec−ブチル及びtert−ブチル等)及びシクロアルキル基(シクロプロピル、シクロブチル、シクロペンチル及びシクロヘキシル等)等が挙げられる。Rfにおいてこれらのアルキル基の水素原子がフッ素原子に置換されている割合は、もとのアルキル基が有していた水素原子のモル数に基づいて、80モル%以上が好ましく、さらに好ましくは90モル%以上、特に好ましくは100モル%である。
フッ素原子による置換割合がこれら好ましい範囲にあると、スルホニウム塩の光感応性がさらに良好となる。特に好ましいRfとしては、CF3 −、CF3CF2 −、(CF3)2CF−、CF3CF2CF2 −、CF3CF2CF2CF2 −、(CF3)2CFCF2 −、CF3CF2(CF3)CF−及び(CF3)3C−が挙げられる。b個のRfは、相互に独立であり、従って、互いに同一でも異なっていてもよい。Rf is preferably an alkyl group in which 80 mol% or more of hydrogen atoms are substituted with a fluorine atom, and the alkyl group is preferably an alkyl group having 1 to 8 carbon atoms. Alkyl groups to be converted to Rf by fluorine substitution include linear alkyl groups (methyl, ethyl, propyl, butyl, pentyl, octyl, etc.), branched alkyl groups (isopropyl, isobutyl, sec-butyl, tert-butyl, etc.) and Cycloalkyl groups (cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, etc.) and the like can be mentioned. The ratio of hydrogen atoms of these alkyl groups substituted with fluorine atoms in Rf is preferably 80 mol% or more, more preferably 90, based on the number of moles of hydrogen atoms possessed by the original alkyl group. It is mol% or more, particularly preferably 100 mol%.
When the substitution ratio by the fluorine atom is in these preferable ranges, the photosensitivity of the sulfonium salt is further improved. Particularly preferred Rf are CF 3 − , CF 3 CF 2 − , (CF 3 ) 2 CF − , CF 3 CF 2 CF 2 − , CF 3 CF 2 CF 2 CF 2 − , (CF 3 ) 2 CFCF 2 −. , CF 3 CF 2 (CF 3 ) CF − and (CF 3 ) 3 C − . The b Rfs are independent of each other and therefore may be the same or different from each other.
R15は、水素原子の一部が少なくとも1個のハロゲン原子又は電子求引基で置換されたフェニル基を表す。ハロゲン原子としては、フッ素原子、塩素原子及び臭素原子等が挙げられる。電子求引基としては、トリフルオロメチル基、ニトロ基及びシアノ基等が挙げられる。これらのうち、1個の水素原子がフッ素原子又はトリフルオロメチル基で置換されたフェニル基が好ましい。c個のR15は相互に独立であり、従って、互いに同一でも異なっていてもよい。R 15 represents a phenyl group in which a part of a hydrogen atom is substituted with at least one halogen atom or an electron-withdrawing group. Examples of the halogen atom include a fluorine atom, a chlorine atom and a bromine atom. Examples of the electron attracting group include a trifluoromethyl group, a nitro group and a cyano group. Of these, a phenyl group in which one hydrogen atom is replaced with a fluorine atom or a trifluoromethyl group is preferable. The c R 15s are independent of each other and may therefore be the same or different from each other.
R16は炭素数1〜20のアルキル基、炭素数1〜20のパーフルオロアルキル基又は炭素数6〜20のアリール基を表し、アルキル基及びパーフルオロアルキル基は直鎖、分枝鎖状又は環状のいずれでもよく、アリール基は無置換であっても、置換基を有していてもよい。R 16 represents an alkyl group having 1 to 20 carbon atoms, a perfluoroalkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms, and the alkyl group and the perfluoroalkyl group are linear, branched or chain-like. It may be cyclic, and the aryl group may be unsubstituted or having a substituent.
aは4〜6の整数を表す。bは1〜5の整数を表し、好ましくは2〜4、特に好ましくは2又は3である。cは、1〜4の整数を表し、好ましくは4である。 a represents an integer of 4 to 6. b represents an integer of 1 to 5, preferably 2 to 4, particularly preferably 2 or 3. c represents an integer of 1 to 4, preferably 4.
ZDa −で表されるアニオンとしては、SbF6 −、PF6 −及びBF4 −で表されるアニオン等が挙げられる。Examples of the anion represented by ZD a − include anions represented by SbF 6 − , PF 6 − and BF 4 − .
(Rf)bPF(6−b) −で表されるアニオンとしては、(CF3CF2)2PF4 −、(CF3CF2)3PF3 −、((CF3)2CF)2PF4 −、((CF3)2CF)3PF3 −、(CF3CF2CF2)2PF4 −、(CF3CF2CF2)3PF3 −、((CF3)2CFCF2)2PF4 −、((CF3)2CFCF2)3PF3 −、(CF3CF2CF2CF2)2PF4 −及び(CF3CF2CF2CF2)3PF3 −で表されるアニオン等が挙げられる。これらのうち、(CF3CF2)3PF3 −、(CF3CF2CF2)3PF3 −、((CF3)2CF)3PF3 −、((CF3)2CF)2PF4 −、((CF3)2CFCF2)3PF3 −及び((CF3)2CFCF2)2PF4 −で表されるアニオンが好ましい。 (Rf) b PF (6- b) - as the anion represented by the, (CF 3 CF 2) 2 PF 4 -, (CF 3 CF 2) 3 PF 3 -, ((CF 3) 2 CF) 2 PF 4 -, ((CF 3 ) 2 CF) 3 PF 3 -, (CF 3 CF 2 CF 2) 2 PF 4 -, (CF 3 CF 2 CF 2) 3 PF 3 -, ((CF 3) 2 CFCF 2) 2 PF 4 -, ( (CF 3) 2 CFCF 2) 3 PF 3 -, (CF 3 CF 2 CF 2 CF 2) 2 PF 4 - , and (CF 3 CF 2 CF 2 CF 2) 3 PF 3 - Examples thereof include anions represented by. Of these, (CF 3 CF 2) 3 PF 3 -, (CF 3 CF 2 CF 2) 3 PF 3 -, ((CF 3) 2 CF) 3 PF 3 -, ((CF 3) 2 CF) 2 PF 4 -, ((CF 3 ) 2 CFCF 2) 3 PF 3 - , and ((CF 3) 2 CFCF 2 ) 2 PF 4 - anion represented by are preferred.
R15 cBD(4−c) −で表されるアニオンとしては、(C6F5)4B−、((CF3)2C6H3)4B−、(CF3C6H4)4B−、(C6F5)2BF2 −、C6F5BF3 −及び(C6H3F2)4B−で表されるアニオン等が挙げられる。これらのうち、(C6F5)4B−及び((CF3)2C6H3)4B−で表されるアニオンが好ましい。The anions represented by R 15 c BD (4-c) − include (C 6 F 5 ) 4 B − , ((CF 3 ) 2 C 6 H 3 ) 4 B − , (CF 3 C 6 H 4). ) 4 B -, (C 6 F 5) 2 BF 2 -, C 6 F 5 BF 3 - and (C 6 H 3 F 2) 4 B - anion, and the like represented. Of these, anions represented by (C 6 F 5 ) 4 B − and ((CF 3 ) 2 C 6 H 3 ) 4 B − are preferred.
R15 cGaD(4−c) −で表されるアニオンとしては、(C6F5)4Ga−、((CF3)2C6H3)4Ga−、(CF3C6H4)4Ga−、(C6F5)2GaF2 −、C6F5GaF3 −及び(C6H3F2)4Ga−で表されるアニオン等が挙げられる。これらのうち、(C6F5)4Ga−及び((CF3)2C6H3)4Ga−で表されるアニオンが好ましい。The anions represented by R 15 c GaD (4-c) − include (C 6 F 5 ) 4 Ga − , ((CF 3 ) 2 C 6 H 3 ) 4 Ga − , (CF 3 C 6 H 4). ) 4 Ga − , (C 6 F 5 ) 2 Ga F 2 − , C 6 F 5 Ga F 3 − and (C 6 H 3 F 2 ) 4 Ga − , and the like. Of these, anions represented by (C 6 F 5 ) 4 Ga − and ((CF 3 ) 2 C 6 H 3 ) 4 Ga − are preferred.
R16SO3 −で表されるアニオンとしては、トリフルオロメタンスルホン酸アニオン、ペンタフルオロエタンスルホン酸アニオン、ヘプタフルオロプロパンスルホン酸アニオン、ノナフルオロブタンスルホン酸アニオン、ペンタフルオロフェニルスルホン酸アニオン、p−トルエンスルホン酸アニオン、ベンゼンスルホン酸アニオン、カンファースルホン酸アニオン、メタンスルホン酸アニオン、エタンスルホン酸アニオン、プロパンスルホン酸アニオン及びブタンスルホン酸アニオン等が挙げられる。これらのうち、トリフルオロメタンスルホン酸アニオン、ノナフルオロブタンスルホン酸アニオン、メタンスルホン酸アニオン、ブタンスルホン酸アニオン、ベンゼンスルホン酸アニオン及びp−トルエンスルホン酸アニオンが好ましい。R 16 SO 3 - as the anion represented by, trifluoromethanesulfonic acid anion, pentafluoroethanesulfonate anion, heptafluoropropanesulfonate acid anion, nonafluorobutanesulfonic acid anion, pentafluorophenyl sulfonate anion, p- toluene Examples thereof include sulfonic acid anion, benzene sulfonic acid anion, camphor sulfonic acid anion, methane sulfonic acid anion, ethane sulfonic acid anion, propane sulfonic acid anion and butane sulfonic acid anion. Of these, trifluoromethanesulfonic acid anion, nonafluorobutanesulfonic acid anion, methanesulfonic acid anion, butanesulfonic acid anion, benzenesulfonic acid anion and p-toluenesulfonic acid anion are preferable.
(R16SO2)3C−で表されるアニオンとしては、(CF3SO2)3C−、(C2F5SO2)3C−、(C3F7SO2)3C−及び(C4F9SO2)3C−で表されるアニオン等が挙げられる。The anions represented by (R 16 SO 2 ) 3 C − are (CF 3 SO 2 ) 3 C − , (C 2 F 5 SO 2 ) 3 C − , and (C 3 F 7 SO 2 ) 3 C −. and (C 4 F 9 SO 2) 3 C - anion such as represented and the like.
(R16SO2)2N−で表されるアニオンとしては、(CF3SO2)2N−、(C2F5SO2)2N−、(C3F7SO2)2N−及び(C4F9SO2)2N−で表されるアニオン等が挙げられる。また、2つの(R16SO2)に対応する部分が互いに結合して環構造を形成した環状イミドも(R16SO2)2N−で表されるアニオンとして挙げられる。The anions represented by (R 16 SO 2 ) 2 N − are (CF 3 SO 2 ) 2 N − , (C 2 F 5 SO 2 ) 2 N − , and (C 3 F 7 SO 2 ) 2 N −. And (C 4 F 9 SO 2 ) 2 N − anions and the like can be mentioned. In addition, a cyclic imide in which the portions corresponding to the two (R 16 SO 2) are bonded to each other to form a ring structure is also mentioned as an anion represented by (R 16 SO 2 ) 2 N −.
一価のアニオンとしては、上記アニオン以外に、過ハロゲン酸イオン(ClO4 −、BrO4 −等)、ハロゲン化スルホン酸イオン(FSO3 −、ClSO3 −等)、硫酸イオン(CH3SO4 −、CF3SO4 −、HSO4 −等)、炭酸イオン(HCO3 −、CH3CO3 −等)、アルミン酸イオン(AlCl4 −、AlF4 −等)、ヘキサフルオロビスマス酸イオン(BiF6 −)、カルボン酸イオン(CH3COO−、CF3COO−、C6H5COO−、CH3C6H4COO−、C6F5COO−、CF3C6H4COO−等)、アリールホウ酸イオン(B(C6H5)4 −、CH3CH2CH2CH2B(C6H5)3 −等)、チオシアン酸イオン(SCN−)及び硝酸イオン(NO3 −)等が使用できる。The monovalent anion, in addition to the above anions, perhalogenated acid ion (ClO 4 -, BrO 4 -, etc.), halogenated sulfonic acid ion (FSO 3 -, ClSO 3 -, etc.), sulfate ion (CH 3 SO 4 -, CF 3 SO 4 -, HSO 4 - , etc.), carbonate ions (HCO 3 -, CH 3 CO 3 - , etc.), aluminate ions (AlCl 4 -, AlF 4 -, etc.), hexafluoro bismuthate ions (BiF 6 -), carboxylate ion (CH 3 COO -, CF 3 COO -, C 6 H 5 COO -, CH 3 C 6 H 4 COO -, C 6 F 5 COO -, CF 3 C 6 H 4 COO - , etc. ), Arylborate ion (B (C 6 H 5 ) 4 − , CH 3 CH 2 CH 2 CH 2 B (C 6 H 5 ) 3 − etc.), Thiosyanate ion (SCN − ) and Nitrate ion (NO 3 −) ) Etc. can be used.
感放射線性酸発生剤の含有量は、本発明の一つの態様である上記ポリマー100質量部に対して0.1〜30質量部であることが好ましい。 The content of the radiation-sensitive acid generator is preferably 0.1 to 30 parts by mass with respect to 100 parts by mass of the polymer, which is one aspect of the present invention.
本発明の一つの態様の感放射線性組成物は、ポリマー及び感放射線性酸発生剤以外に、含フッ素はっ水ポリマーを含んでいても良い。
上記含フッ素はっ水ポリマーとしては、特に制限はないが液浸露光プロセスに通常用いられるものが挙げられ、上記ポリマーよりもフッ素原子含有率が大きい方が好ましい。それにより、感放射線性組成物を用いてレジスト膜を形成する場合に、含フッ素はっ水ポリマーのはっ水性に起因して、レジスト膜表面に上記含フッ素はっ水ポリマーを偏在化させることができる。
フッ素はっ水ポリマーのフッ素含有率としては、フッ素はっ水ポリマー中の炭化水素基における水素原子の25%以上がフッ素化されていることが好ましく、50%以上がフッ素化されていることがより好ましい。
感放射線性組成物中のフッ素はっ水ポリマーの含有量としては、本発明の一つの態様の上記ポリマー(該フッ素はっ水ポリマーでないもの)100質量部に対し、0.5〜10質量部であることが、レジスト膜の疎水性が向上する点から好ましい。フッ素はっ水ポリマーは単独で用いてもよく、2種類以上を組み合わせて用いてもよい。The radiation-sensitive composition of one aspect of the present invention may contain a fluorine-containing water-repellent polymer in addition to the polymer and the radiation-sensitive acid generator.
The fluorine-containing water-repellent polymer is not particularly limited, and examples thereof are those usually used in an immersion exposure process, and a polymer having a higher fluorine atom content than the polymer is preferable. Thereby, when the resist film is formed using the radiation-sensitive composition, the fluorine-containing water-repellent polymer is unevenly distributed on the surface of the resist film due to the water repellency of the fluorine-containing water-repellent polymer. Can be done.
As for the fluorine content of the fluorine-repellent polymer, it is preferable that 25% or more of the hydrogen atoms in the hydrocarbon groups in the fluorine-repellent polymer are fluorinated, and 50% or more is fluorinated. More preferred.
The content of the fluorine-repellent polymer in the radiation-sensitive composition is 0.5 to 10 parts by mass with respect to 100 parts by mass of the polymer (non-fluorine-water-repellent polymer) according to one embodiment of the present invention. Is preferable from the viewpoint of improving the hydrophobicity of the resist film. The fluorine-repellent polymer may be used alone or in combination of two or more.
本発明の一つの態様の感放射線性組成物は、公知の添加剤、例えば、増感化合物、トリオクチルアミン等のクエンチャ及び光崩壊性塩基等の酸拡散制御剤、界面活性剤、充填剤、顔料、帯電防止剤、難燃剤、光安定剤、酸化防止剤、イオン補足剤及び溶剤等から選ばれる少なくとも1つを添加してもよい。 The radiation-sensitive composition according to one aspect of the present invention includes known additives such as sensitizing compounds, quenchers such as trioctylamine, acid diffusion control agents such as photodisintegrating bases, surfactants, fillers, and the like. At least one selected from pigments, antistatic agents, flame retardants, photostabilizers, antioxidants, ion-supplementing agents, solvents and the like may be added.
酸拡散制御剤は、光により酸発生体から生じる酸のレジスト膜中における拡散現象を制御し、非露光領域における好ましくない化学反応を制御する効果を奏する。そのため、得られるフォト感放射線性組成物の貯蔵安定性がさらに向上し、またレジストとしての解像度がさらに向上するとともに、露光から現像処理までの引き置き時間の変動によるレジストパターンの線幅変化を抑えることができ、プロセス安定性に優れたフォト感放射線性組成物が得られる。
酸拡散制御剤としては、例えば、トリオクチルアミン等の同一分子内に窒素原子を1個有する化合物、窒素原子を2個有する化合物、窒素原子を3個有する化合物、アミド基含有化合物、ウレア化合物、含窒素複素環化合物等のクエンチャが挙げられる。また、酸拡散制御剤として、露光により感光し弱酸を発生する光崩壊性塩基を用いることもできる。
酸拡散制御剤の含有量は、本発明の一つの態様である上記ポリマー100質量部に対して0〜20質量部であることが好ましい。The acid diffusion control agent has the effect of controlling the diffusion phenomenon of the acid generated from the acid generator by light in the resist film and controlling an unfavorable chemical reaction in the unexposed region. Therefore, the storage stability of the obtained photosensitizing radiation composition is further improved, the resolution as a resist is further improved, and the line width change of the resist pattern due to the fluctuation of the leaving time from the exposure to the development process is suppressed. A photosensitizing radiation composition having excellent process stability can be obtained.
Examples of the acid diffusion control agent include a compound having one nitrogen atom in the same molecule such as trioctylamine, a compound having two nitrogen atoms, a compound having three nitrogen atoms, an amide group-containing compound, and a urea compound. Quenchers such as nitrogen-containing heterocyclic compounds can be mentioned. Further, as the acid diffusion control agent, a photodisintegrating base that is exposed to light and generates a weak acid by exposure can also be used.
The content of the acid diffusion control agent is preferably 0 to 20 parts by mass with respect to 100 parts by mass of the polymer, which is one aspect of the present invention.
光崩壊性塩基は、露光により感光し弱酸を発生するものであり、露光により分解して酸拡散制御性を失うオニウム塩化合物、ヨードニウム塩化合物等が挙げられる。光崩壊性塩基としては、上記感放射線性酸発生剤と同様のものが挙げられる。
レジスト組成物中に感放射線性酸発生剤と共に上記光崩壊性塩基を含有させるときは、上記光崩壊性塩基のアニオンは、該感放射線性酸発生剤が有するアニオンと酸強度が同等以下のものを用いることが、光崩壊性塩基として作用するため感度及び酸拡散制御の点から好ましい。また、アニオン構造がバルキーであると、解像性が高まるため好ましい。
光崩壊性塩基としては、例えば下記式で示される化合物等が挙げられるが、これに制限されない。
光崩壊性塩基の含有量は、本発明の一つの態様である上記ポリマー100質量部に対して0〜20質量部であることが好ましい。The photodisintegrating base is one that is exposed to light by exposure to generate a weak acid, and examples thereof include onium salt compounds and iodonium salt compounds that are decomposed by exposure and lose their acid diffusion controllability. Examples of the photodisintegrating base include the same as the above-mentioned radiation-sensitive acid generator.
When the photo-disintegrating base is contained in the resist composition together with the radiation-sensitive acid generator, the anion of the photo-disintegrating base has an acid strength equal to or less than that of the anion possessed by the radiation-sensitive acid generator. Is preferable from the viewpoint of sensitivity and acid diffusion control because it acts as a photodegradable base. Further, it is preferable that the anion structure is bulky because the resolution is improved.
Examples of the photodisintegrating base include, but are not limited to, compounds represented by the following formulas.
The content of the photodisintegrating base is preferably 0 to 20 parts by mass with respect to 100 parts by mass of the polymer, which is one aspect of the present invention.
上記感放射線性酸発生剤、増感化合物及び酸拡散制御剤等は、上記ポリマーの構造単位として含まれていても良い。すなわち、例えば、感放射線性酸発生剤がオニウム塩化合物である場合、該オニウム塩化合物が上記式(5)の***部分で結合した構造単位としてポリマーに含まれていても良い。 The radiation-sensitive acid generator, the sensitizing compound, the acid diffusion control agent, and the like may be included as structural units of the polymer. That is, for example, when the radiation-sensitive acid generator is an onium salt compound, the onium salt compound may be contained in the polymer as a structural unit bonded at the *** portion of the above formula (5).
<4>感放射線性組成物の調製方法
本発明の一つの態様の感放射線性組成物の調製方法は特に制限はなく、上記ポリマー及びその他の任意成分を混合、溶解又は混練する等の公知の方法により調製することができる。
上記ポリマーは、上記構造単位(I)を構成するモノマー、及び、必要によりその他の構造単位を構成するモノマーを通常の方法により適宜重合して合成できる。
しかしながら、本発明のいくつかの態様に係るポリマーの製造方法はこれに限定されない。<4> Method for preparing a radiation-sensitive composition The method for preparing a radiation-sensitive composition according to one aspect of the present invention is not particularly limited, and is known such as mixing, dissolving or kneading the above polymer and other optional components. It can be prepared by the method.
The polymer can be synthesized by appropriately polymerizing the monomer constituting the structural unit (I) and, if necessary, the monomer constituting the other structural unit by a usual method.
However, the method for producing a polymer according to some aspects of the present invention is not limited to this.
<5>デバイスの製造方法
本発明の一つの形態は、上記感放射線性組成物を用いて基板上にレジスト膜を形成する工程と、放射線を用いて上記レジスト膜を露光して露光されたレジスト膜を得る工程と、上記露光されたレジスト膜を現像する工程と、を含むデバイスの製造方法である。
本発明の一つの形態は、上記感放射線性組成物を用いてレジスト膜を形成する工程と、上記レジスト膜を露光して露光されたレジスト膜を得る工程と、上記露光されたレジスト膜を現像する工程と、を含み、個片化チップを得る前のパターンを有する基板の製造方法であってもよい。<5> Device Manufacturing Method One embodiment of the present invention includes a step of forming a resist film on a substrate using the radiation-sensitive composition and a resist exposed by exposing the resist film with radiation. It is a method for manufacturing a device including a step of obtaining a film and a step of developing the exposed resist film.
One embodiment of the present invention includes a step of forming a resist film using the radiation-sensitive composition, a step of exposing the resist film to obtain an exposed resist film, and developing the exposed resist film. It may be a method of manufacturing a substrate having a pattern before obtaining an individualized chip, which includes a step of performing the process.
上記露光する工程における露光に用いる放射線としては、上記感放射線性酸発生剤が活性化して酸を発生させ得る活性エネルギー線又は光であればよく、KrFエキシマレーザ光、ArFエキシマレーザ光、F2エキシマレーザ光、電子線、UV、可視光線、X線、電子線、イオン線、i線、EUV等を意味する。
光の照射量は、光硬化性組成物中の各成分の種類及び配合割合、並びに塗膜の膜厚等によって異なるが、1J/cm2以下又は1000μC/cm2以下であることが好ましい。
上記感放射線性組成物は、増感化合物を含む場合、放射線の照射後に、紫外線等で第2の露光を行うことも好ましい。The radiation used for the exposure in the exposure step may be an active energy ray or light capable of activating the radiation-sensitive acid generator to generate an acid, and may be KrF excimer laser light, ArF excimer laser light, or F 2 It means excimer laser light, electron beam, UV, visible light, X-ray, electron beam, ionizing ray, i-ray, EUV and the like.
The amount of light irradiation varies depending on the type and blending ratio of each component in the photocurable composition, the film thickness of the coating film, and the like, but is preferably 1 J / cm 2 or less or 1000 μC / cm 2 or less.
When the radiation-sensitive composition contains a sensitizing compound, it is also preferable to perform a second exposure with ultraviolet rays or the like after irradiation with radiation.
以下に、本発明のいくつかの態様を実施例に基づいて説明するが、本発明はこれらの例によって何ら限定されるものではない。 Hereinafter, some aspects of the present invention will be described based on examples, but the present invention is not limited to these examples.
[モノマーの製造方法]
[合成例1]アルコールの合成
マグネシウム(2.93g)のテトラヒドロフラン(37.9mL)溶液を、50℃にて加熱後、1,4-ジブロモブタン(10.0g)のテトラヒドロフラン(11.2mL)溶液を滴下した。ここにカンファン酸クロリド(10.0g)のテトラヒドロフラン(13.0mL)溶液を20℃以下で滴下した。1時間撹拌後、飽和塩化アンモ二ウム水溶液を滴下し反応を停止した。通常の水系後処理(aqueous work−up)、溶剤留去の後、シリカゲルカラムクロマトグラフィー(n-ヘキサン/酢酸エチル)により精製を行い、アルコール(6.62g、収率60%)を高粘性油状物質として得た。[Manufacturing method of monomer]
[Synthesis Example 1] Synthesis of Alcohol A solution of magnesium (2.93 g) in tetrahydrofuran (37.9 mL) is heated at 50 ° C., and then a solution of 1,4-dibromobutane (10.0 g) in tetrahydrofuran (11.2 mL). Was dropped. A solution of tetralide (10.0 g) in tetrahydrofuran (13.0 mL) was added dropwise thereto at 20 ° C. or lower. After stirring for 1 hour, a saturated aqueous solution of ammonium chloride was added dropwise to stop the reaction. After normal aqueous post-treatment (aqueous work-up) and solvent distillation, purification is performed by silica gel column chromatography (n-hexane / ethyl acetate), and alcohol (6.62 g, yield 60%) is added as a highly viscous oil. Obtained as a substance.
1H−NMR(400MHz in DMSO−d6):δ(ppm)=4.41(1H、s)、2.23(1H、ddd)1.78‐1.35(11H、m)、0.95(3H、s)、0.87(6H、s)。 1H-NMR (400MHz in DMSO-d6): δ (ppm) = 4.41 (1H, s), 2.23 (1H, ddd) 1.78-1.35 (11H, m), 0.95 ( 3H, s), 0.87 (6H, s).
[合成例2]モノマー(M−1)の合成
上記合成例1で得られたアルコール(10.0g)のテトラヒドロフラン(50.0ml)溶液を10℃以下に冷却後、n-ブチルリチウム(1.6M、24.9ml)を滴下した。1時間攪拌後、メタクリル酸クロリド(5.3g)のテトラヒドロフラン(13.2g)溶液を20℃以下で滴下した。
1時間攪拌後、水を滴下し反応を停止させた。通常の水系後処理(aqueous work−up)、溶剤留去の後、シリカゲルカラムクロマトグラフィー(n-ヘキサン/酢酸エチルにより精製を行い、モノマー(M−1)(3.9g、収率30%)を油状物として得た。[Synthesis Example 2] Synthesis of Monomer (M-1) After cooling a solution of alcohol (10.0 g) obtained in Synthesis Example 1 in tetrahydrofuran (50.0 ml) to 10 ° C. or lower, n-butyllithium (1. 6M, 24.9 ml) was added dropwise. After stirring for 1 hour, a solution of methacrylic acid chloride (5.3 g) in tetrahydrofuran (13.2 g) was added dropwise at 20 ° C. or lower.
After stirring for 1 hour, water was added dropwise to stop the reaction. After normal aqueous work-up and solvent distillation, silica gel column chromatography (purification with n-hexane / ethyl acetate, monomer (M-1) (3.9 g, yield 30%)) Was obtained as an oil.
1H−NMR(400MHz in DMSO−d6):δ(ppm)=5.93(1H、m)、5.62(1H、m)、2.44‐2.30(3H、m)、2.04‐1.93(1H、m)、1.93‐1.83(1H、m)、1.81(3H、s)、1.80‐1.66(4H、m)、1.64‐1.53(2H、m)、1.50‐1.40(1H、m)、0.91(3H、s)、0.90(3H、s)、0.89(3H、s)。 1H-NMR (400MHz in DMSO-d6): δ (ppm) = 5.93 (1H, m), 5.62 (1H, m), 2.44-2.30 (3H, m), 2.04 -1.93 (1H, m), 1.93-1.83 (1H, m), 1.81 (3H, s), 1.80-1.66 (4H, m), 1.64-1 .53 (2H, m), 1.50-1.40 (1H, m), 0.91 (3H, s), 0.90 (3H, s), 0.89 (3H, s).
[合成例3]アルコールの合成
マグネシウム(2.65g)のテトラヒドロフラン(34.3mL)溶液を、50℃にて加熱後、1−ブロモブタン(12.6g)のテトラヒドロフラン(11.2mL)溶液を滴下した。ここにカンファン酸クロリド(10.0g)のテトラヒドロフラン(13.0mL)溶液を20℃以下で滴下した。1時間撹拌後、飽和塩化アンモニウム水溶液を滴下し反応を停止した。通常の水系後処理(aqueous work−up)、溶剤留去の後、シリカゲルカラムクロマトグラフィー(n-ヘキサン/酢酸エチルにより精製を行い、アルコール(7.52g、収率55%)を油状物として得た。[Synthesis Example 3] Synthesis of Alcohol A solution of magnesium (2.65 g) in tetrahydrofuran (34.3 mL) was heated at 50 ° C., and then a solution of 1-bromobutane (12.6 g) in tetrahydrofuran (11.2 mL) was added dropwise. .. A solution of tetralide (10.0 g) in tetrahydrofuran (13.0 mL) was added dropwise thereto at 20 ° C. or lower. After stirring for 1 hour, a saturated aqueous solution of ammonium chloride was added dropwise to stop the reaction. After normal aqueous post-treatment (aqueous work-up) and solvent distillation, silica gel column chromatography (purification with n-hexane / ethyl acetate is performed to obtain an alcohol (7.52 g, yield 55%) as an oil. rice field.
1H−NMR(400MHz in DMSO−d6):δ(ppm)=4.31(1H、s)、2.28−2.19(1H、m)、1.78‐1.18(15H、m)、1.00(3H、s)、0.96(3H、s)、0.91−0.84(9H、m)。 1H-NMR (400MHz in DMSO-d6): δ (ppm) = 4.31 (1H, s), 2.28-2.19 (1H, m), 1.78-1.18 (15H, m) , 1.00 (3H, s), 0.96 (3H, s), 0.91-0.84 (9H, m).
[合成例4]モノマー(M−2)の合成
アルコールを上記合成例3で得たものに代えた以外は合成例2と同様の方法でモノマー(M−2)を合成した。[Synthesis Example 4] Synthesis of Monomer (M-2) Monomer (M-2) was synthesized in the same manner as in Synthesis Example 2 except that the alcohol obtained in Synthesis Example 3 was replaced.
1H−NMR(400MHz in DMSO−d6):δ(ppm)=5.97(1H、s)、5.65(1H、m.)、2.21‐1.70(9H、m)、1.50−1.17(10H、m)、0.98(3H、s)、0.94(3H、s)、0.92(3H、s)、0.88(3H、t)、0.87(3H、t)。 1H-NMR (400MHz in DMSO-d6): δ (ppm) = 5.97 (1H, s), 5.65 (1H, m.), 2.21-1.70 (9H, m), 1. 50-1.17 (10H, m), 0.98 (3H, s), 0.94 (3H, s), 0.92 (3H, s), 0.88 (3H, t), 0.87 (3H, t).
[ポリマー(A−1〜A−5)の合成]
[合成例5]ポリマー(A−1)の合成
下記で示されるモノマー(G−1)10.0g(50モル%)及び上記合成例2で得られたモノマー(M−1)13.9g(50モル%)を2−ブタノン35.8gに溶解し、さらに、重合開始剤としてAIBN0.97g(全モノマーの合計モル数に対して6.5モル%)を溶解させてモノマー溶液を調整した。21.5gの2−ブタノンを入れた100ml三口フラスコを30分窒素パージした後、攪拌しながら75℃に加熱し、上記調整したモノマー溶液を滴下漏斗にて4時間かけて滴下した。滴下開始を重合反応の開始時間とし、重合反応を6時間実施した。重合反応終了後、重合反応液を水冷して30℃以下に冷却した。328gのメタノール中に、この冷却した重合反応液を投入し、析出した白色粉末をろ別した。このろ別した白色粉末を239gのメタノールで2回洗浄した後、ろ別し、50℃で15時間乾燥させて、白色粉末状のポリマー(A−1)を得た(収量19.8g、収率83%)。ポリマーA−1のMwは7,200であり、Mw/Mnは1.68であった。13C-NMR分析の結果、モノマー(G−1)に由来する構造単位及びモノマー(M−1)に由来する構造単位の含有割合はそれぞれ50.9モル%及び49.1モル%であった。[Synthesis of polymers (A-1 to A-5)]
[Synthesis Example 5] Synthesis of Polymer (A-1) 10.0 g (50 mol%) of the monomer (G-1) shown below and 13.9 g (M-1) of the monomer (M-1) obtained in the above Synthesis Example 2 ( 50 mol%) was dissolved in 35.8 g of 2-butanone, and 0.97 g of AIBN (6.5 mol% with respect to the total number of moles of all monomers) was further dissolved as a polymerization initiator to prepare a monomer solution. A 100 ml three-necked flask containing 21.5 g of 2-butanone was purged with nitrogen for 30 minutes, heated to 75 ° C. with stirring, and the prepared monomer solution was added dropwise using a dropping funnel over 4 hours. The start of dropping was set as the start time of the polymerization reaction, and the polymerization reaction was carried out for 6 hours. After completion of the polymerization reaction, the polymerization reaction solution was water-cooled and cooled to 30 ° C. or lower. This cooled polymerization reaction solution was put into 328 g of methanol, and the precipitated white powder was filtered off. The filtered white powder was washed twice with 239 g of methanol, filtered, and dried at 50 ° C. for 15 hours to obtain a white powdery polymer (A-1) (yield 19.8 g, yield). Rate 83%). The Mw of the polymer A-1 was 7,200, and the Mw / Mn was 1.68. As a result of 13C-NMR analysis, the content ratios of the structural unit derived from the monomer (G-1) and the structural unit derived from the monomer (M-1) were 50.9 mol% and 49.1 mol%, respectively.
[合成例2〜5]ポリマー(A−2)〜(A−5)の合成
下記表1に示す種類及び使用量の各モノマーを用いた以外は、合成例1と同様にして、ポリマー(A−2)〜(A−5)を合成した。これらのモノマーの各構造単位の含有割合、収率(%)、Mw及びMw/Mn比を、表1に合わせて示す。[Synthesis Examples 2 to 5] Synthesis of Polymers (A-2) to (A-5) The polymer (A) is the same as in Synthesis Example 1 except that the types and amounts of the monomers shown in Table 1 below are used. -2)-(A-5) were synthesized. The content ratio, yield (%), Mw and Mw / Mn ratio of each structural unit of these monomers are shown in Table 1.
<Tgシミュレーション>
上記モノマーから構成されるホモポリマーのガラス転移温度(Tg)をScigress(富士通製)を用い、Bicerano法にて計算した。その結果を表2に示す。<Tg simulation>
The glass transition temperature (Tg) of the homopolymer composed of the above monomers was calculated by the Bicerano method using Scigress (manufactured by Fujitsu). The results are shown in Table 2.
<フォト感放射線性組成物溶液の調製>
[実施例1]
ベース重合体としてのポリマー(A−1)100質量部、感放射線性酸発生剤であるトリフェニルスルホニウム4−(アダマンタン−1−カルボニルオキシ)−1,1,2−トリフルオロ−ブタン−1−スルホネート(Triphenyl-sulfonium; 4-(adamantane-1-carbonyloxy)-1,1,2-trifluoro-butane-1-sulfonate)5質量部、酸拡散制御剤であるトリエタノールアミン0.2質量部、溶媒であるプロピレングリコールモノメチルエーテルアセテート1250質量部を混合後、PTFEフィルターでろ過し、感放射線性組成物(H−1)溶液を調製した。<Preparation of photosensitizing radiation composition solution>
[Example 1]
100 parts by mass of polymer (A-1) as a base polymer, triphenylsulfonium 4- (adamantan-1-carbonyloxy) -1,1,2-trifluoro-butane-1-, which is a radiation-sensitive acid generator 5 parts by mass of sulfonate (Triphenyl-sulfonium; 4- (adamantane-1-carbonyloxy) -1,1,2-trifluoro-butane-1-sulfonate), 0.2 parts by mass of triethanolamine as an acid diffusion control agent, solvent After mixing 1250 parts by mass of propylene glycol monomethyl ether acetate, which is a propylene glycol monomethyl ether acetate, the mixture was filtered through a PTFE filter to prepare a radiation-sensitive composition (H-1) solution.
[実施例2及び比較例1〜3]
下記表3に示す種類及び含有量の各成分を用いた以外は実施例1と同様にして感放射線性組成物(H-2)〜(H-5)を調製した。[Example 2 and Comparative Examples 1 to 3]
Radiation-sensitive compositions (H-2) to (H-5) were prepared in the same manner as in Example 1 except that each component of the type and content shown in Table 3 below was used.
<レジストパターンの形成(1)>
上記感放射線性組成物溶液をシリコンウエハ上に回転塗布した後、ホットプレート上で110℃で60秒間プレベークし、膜厚300nmのレジスト膜を得る。この膜に、ArFエキシマレーザーステッパー(波長193nm)により露光し、次いで110℃で60秒間ポストベークを行う。その後、アルカリ現像液として2.38質量%のTMAH水溶液を用いてアルカリ現像し、水で洗浄し、乾燥してポジ型のレジストパターンを形成した。<Formation of resist pattern (1)>
After the above radiation-sensitive composition solution is rotationally coated on a silicon wafer, it is prebaked on a hot plate at 110 ° C. for 60 seconds to obtain a resist film having a film thickness of 300 nm. The film is exposed to an ArF excimer laser stepper (wavelength 193 nm) and then post-baked at 110 ° C. for 60 seconds. Then, it was subjected to alkaline development using a 2.38 mass% TMAH aqueous solution as an alkaline developer, washed with water, and dried to form a positive resist pattern.
<レジストパターンの形成(2)>
上記TMAH水溶液の代わりに酢酸n−ブチルを用いて有機溶媒現像し、かつ水での洗浄を行わなかった以外は、上記レジストパターンの形成(1)と同様に操作して、ネガ型のレジストパターンを形成した。<Formation of resist pattern (2)>
Negative type resist pattern is operated in the same manner as in the above resist pattern formation (1) except that it is developed with an organic solvent using n-butyl acetate instead of the above TMAH aqueous solution and is not washed with water. Was formed.
<評価>
解像性及びLWR(Line width roughness)、EL(Exposure latitude)について、下記のようにして評価する。
上記方法に従い調整した感放射線性組成物(比較例1)を用いて、解像性、LWR、ELを測定する。それらの値を基準とし、基準と比べたときに実施例1、2及び比較例2、3の解像性、LWR、EL各性能に10%以上の向上が見られた場合、「〇」とし、10%未満、5%以上の向上の場合「△」とし、5%未満の向上の場合、「×」として評価した。なお、レジストパターンの測長には走査型電子顕微鏡を用いた。<Evaluation>
The resolution, LWR (Line width roughness), and EL (Exposure latitude) are evaluated as follows.
The resolution, LWR, and EL are measured using the radiation-sensitive composition (Comparative Example 1) adjusted according to the above method. Based on these values, if the resolution, LWR, and EL performances of Examples 1 and 2 and Comparative Examples 2 and 3 are improved by 10% or more when compared with the standard, the value is set to "○". An improvement of less than 10%, 5% or more was evaluated as "Δ", and an improvement of less than 5% was evaluated as "x". A scanning electron microscope was used to measure the length of the resist pattern.
実施例1及び2の感放射線性組成物は、比較例1〜3の感放射線性組成物に比べ、リソグラフィにおける解像性に優れ、且つ、微細パターンにおけるLWRを低減できている。理由としては、ラクトン骨格等を有する橋かけ脂環式炭化水素基を有する構造単位を含むポリマーは、それ以外の構造単位との疎水相互作用を上げられ、非相溶性を少なくできると考えられる。
以上の結果から、本発明のいくつかの態様におけるポリマーは、リソグラフィにおける解像性に優れ、且つ、微細パターンにおけるLWRを低減できる効果を有することがわかる。The radiation-sensitive compositions of Examples 1 and 2 are superior in resolution in lithography and can reduce LWR in a fine pattern as compared with the radiation-sensitive compositions of Comparative Examples 1 to 3. The reason is considered to be that the polymer containing a structural unit having a bridging alicyclic hydrocarbon group having a lactone skeleton or the like can increase the hydrophobic interaction with other structural units and reduce the incompatibility.
From the above results, it can be seen that the polymer in some aspects of the present invention has an effect of being excellent in resolution in lithography and being able to reduce LWR in a fine pattern.
本発明の一つの態様であるポリマーは、感放射線性組成物に用いた場合、LWR性能、及びELの性能に優れる感放射線性組成物とすることができる。 When used in a radiation-sensitive composition, the polymer according to one aspect of the present invention can be a radiation-sensitive composition having excellent LWR performance and EL performance.
Claims (8)
R1及びR2は互いに単結合で直接結合して、又は、酸素原子、硫黄原子及びメチレン基からなる群より選択されるいずれかを介して、環構造を形成し、
R3は、置換基を有してもよい、ラクトン骨格、スルトン骨格及びラクタム骨格からなる群より選択される少なくともいずれかを含む炭素数3〜15の1価の橋かけ脂環式炭化水素基であり、
Xはカルボニルオキシ基であり、
*はポリマー主鎖部との結合部位を示し、
前記式(2)中、R1、R2、R3及びXはそれぞれ独立して前記式(1)のR1、R2、R3及びXの選択肢から選択されるいずれかであり、
R4は、水素原子;フッ素原子;直鎖、分岐又は環状の炭素数1〜6のアルキル基;及び、直鎖、分岐又は環状の炭素数1〜6のアルケニル基;からなる群より選択されるいずれかであり、該R4中の前記アルキル基及びアルケニル基中の少なくとも1つの水素原子がフッ素原子に置換されていてもよい。) A polymer having a structural unit (I) containing a group represented by the following formula (1).
R 1 and R 2 form a ring structure by directly bonding to each other in a single bond or via one selected from the group consisting of an oxygen atom, a sulfur atom and a methylene group.
R 3 is a monovalent alicyclic hydrocarbon group having 3 to 15 carbon atoms and containing at least one selected from the group consisting of a lactone skeleton, a sultone skeleton and a lactam skeleton, which may have a substituent. And
X is a carbonyloxy group
* Indicates the binding site with the polymer main chain.
In the formula (2), R 1 , R 2 , R 3 and X are independently selected from the options of R 1 , R 2 , R 3 and X in the formula (1).
R 4 is selected from the group consisting of a hydrogen atom; a fluorine atom; a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; and a linear, branched or cyclic alkenyl group having 1 to 6 carbon atoms; At least one hydrogen atom in the alkyl group and the alkenyl group in the R 4 may be substituted with a fluorine atom. )
(前記式(3)中、R1及びR2は、それぞれ独立に、置換基を有してもよい直鎖状又は分岐状の炭素数1〜10の1価の脂肪族炭化水素基;置換基を有してもよい炭素数3〜15の1価の脂環式炭化水素基;前記脂肪族炭化水素基及び脂環式炭化水素基の少なくなくとも1つのメチレン基が2価のヘテロ原子含有基で置換された基;置換基を有してもよい炭素数6〜30の芳香族炭化水素基;並びに、置換基を有してもよい炭素数6〜30の芳香族複素環基;からなる群より選択されるいずれかであり、且つ、
R1及びR2は単結合で直接結合して、又は、酸素原子、硫黄原子及びメチレン基からなる群より選択されるいずれかを介して、互いに環構造を形成し、
R3は、置換基を有してもよい、ラクトン骨格、スルトン骨格及びラクタム骨格からなる群より選択される少なくともいずれかを含む炭素数3〜15の1価の橋かけ脂環式炭化水素基であり、
Xはカルボニルオキシ基であり、
Yは重合性基であり、
該重合性基はエチレン性二重結合を有する基であり、前記エチレン性二重結合を有する基は置換基を有していてもよく、
前記式(4)中、R 1 〜R 3 はそれぞれ独立して前記式(3)のR 1 〜R 3 の選択肢から選択されるいずれかと同様であり、
R 4 は、水素原子;直鎖、分岐又は環状の炭素数1〜6のアルキル基;及び、直鎖、分岐又は環状の炭素数1〜6のアルケニル基;からなる群より選択されるいずれかであり、該R 4 中の前記アルキル基及びアルケニル基中の少なくとも1つの水素原子がフッ素原子に置換されていてもよい。) It is a compound represented by the following formula (3).
(In the above formula (3), R 1 and R 2 are linear or branched monovalent aliphatic hydrocarbon groups having 1 to 10 carbon atoms, which may independently have substituents; substitutions. A monovalent alicyclic hydrocarbon group having 3 to 15 carbon atoms which may have a group; at least one methylene group of the aliphatic hydrocarbon group and the alicyclic hydrocarbon group is a divalent heteroatom. A group substituted with a containing group; an aromatic hydrocarbon group having 6 to 30 carbon atoms which may have a substituent; and an aromatic heterocyclic group having 6 to 30 carbon atoms which may have a substituent; It is any one selected from the group consisting of, and,
R 1 and R 2 form a ring structure with each other by directly bonding with a single bond or via either selected from the group consisting of an oxygen atom, a sulfur atom and a methylene group.
R 3 is a monovalent alicyclic hydrocarbon group having 3 to 15 carbon atoms and containing at least one selected from the group consisting of a lactone skeleton, a sultone skeleton and a lactam skeleton, which may have a substituent. And
X is a carbonyloxy group
Y is a polymerizable group
Polymerizable groups are groups having an ethylenic double bond, group having an ethylenic double bond rather it may also have a substituent,
In the formula (4), R 1 to R 3 are the same as any one independently selected from the options of R 1 to R 3 in the formula (3).
R 4 is selected from the group consisting of a hydrogen atom; a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; and a linear, branched or cyclic alkenyl group having 1 to 6 carbon atoms; At least one hydrogen atom in the alkyl group and the alkenyl group in the R 4 may be substituted with a fluorine atom. )
放射線を用いて、前記レジスト膜を露光する工程と、
露光されたレジスト膜を現像する工程と、を含むデバイスの製造方法。 A step of forming a resist film on a substrate using the radiation-sensitive composition according to any one of claims 3 to 5.
The step of exposing the resist film using radiation and
A method of manufacturing a device, including a step of developing an exposed resist film.
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