JP6945450B2 - 光検出装置 - Google Patents
光検出装置 Download PDFInfo
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- JP6945450B2 JP6945450B2 JP2017543435A JP2017543435A JP6945450B2 JP 6945450 B2 JP6945450 B2 JP 6945450B2 JP 2017543435 A JP2017543435 A JP 2017543435A JP 2017543435 A JP2017543435 A JP 2017543435A JP 6945450 B2 JP6945450 B2 JP 6945450B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
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- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0213—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using attenuators
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
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- G01J3/0256—Compact construction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0291—Housings; Spectrometer accessories; Spatial arrangement of elements, e.g. folded path arrangements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0801—Means for wavelength selection or discrimination
- G01J5/0802—Optical filters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/213—Fabry-Perot type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Spectrometry And Color Measurement (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Optical Filters (AREA)
Description
[第1実施形態]
[光検出装置の構成]
[ファブリペロー干渉フィルタの構成]
[作用及び効果]
[第2実施形態]
[光検出装置の構成]
[作用及び効果]
[変形例]
[第3実施形態]
[光検出装置の構成]
[ファブリペロー干渉フィルタの構成]
[作用及び効果]
[第4実施形態]
[光検出装置の構成]
[作用及び効果]
[第5実施形態]
[光検出装置の構成]
[作用及び効果]
[第6実施形態]
[光検出装置の構成]
[作用及び効果]
[変形例]
Claims (12)
- 互いの距離が可変とされた第1ミラー及び第2ミラーを有し、前記第1ミラーと前記第2ミラーとの距離に応じた光を透過させる光透過領域が所定のライン上に設けられたファブリペロー干渉フィルタと、
前記ライン上において前記ファブリペロー干渉フィルタの第1の側に配置され、前記光透過領域を透過した光を検出する光検出器と、
前記ライン上において前記ファブリペロー干渉フィルタの第2の側に位置する開口を有し、前記ファブリペロー干渉フィルタ及び前記光検出器を収容するパッケージと、
前記開口を塞ぐように前記パッケージの内面に配置された光透過部材、及び、前記光透過部材の光出射面に配置され、前記光透過領域に入射させる光を透過させるバンドパスフィルタを含む光透過部と、を備え、
前記バンドパスフィルタは、前記光透過部材の前記光出射面上において前記バンドパスフィルタの外縁から外側に突出した部分を有する接着部材によって、前記光透過部材の前記光出射面に固定されており、
前記光透過部は、前記パッケージ内に配置された側面を有し、
前記ラインに平行な方向から見た場合に、前記ファブリペロー干渉フィルタの外縁は、前記開口の外縁よりも外側に位置しており、前記光透過部材の外縁は、前記ファブリペロー干渉フィルタの前記外縁よりも外側に位置している、光検出装置。 - 前記ラインに平行な方向から見た場合に、前記バンドパスフィルタの外縁は、前記ファブリペロー干渉フィルタの前記外縁よりも外側に位置している、請求項1記載の光検出装置。
- 前記光透過部材の厚さは、前記ファブリペロー干渉フィルタと前記光透過部材との距離に0.5を乗じた値以上の値である、請求項1又は2記載の光検出装置。
- 前記ファブリペロー干渉フィルタは、前記第1ミラー及び前記第2ミラーを支持するシリコン基板を有し、
前記光検出器は、光電変換領域が形成されたInGaAs基板を有する、請求項1〜3のいずれか一項記載の光検出装置。 - 前記パッケージを貫通するリードピンと、
前記ファブリペロー干渉フィルタの端子と前記リードピンとを電気的に接続するワイヤと、を更に備える、請求項1〜4のいずれか一項記載の光検出装置。 - 前記バンドパスフィルタの形状は、多角形板状であり、
前記パッケージは、前記開口が形成された第1壁部、前記ファブリペロー干渉フィルタ、前記バンドパスフィルタ及び前記光検出器を挟んで前記第1壁部と対向する第2壁部、並びに、前記ファブリペロー干渉フィルタ、前記バンドパスフィルタ及び前記光検出器を包囲する円筒状の側壁部を有する、請求項1〜5のいずれか一項記載の光検出装置。 - 前記接着部材は、前記光透過部材の前記光出射面と対向する前記バンドパスフィルタの光入射面の全領域に配置されている、請求項6記載の光検出装置。
- 前記接着部材は、前記光透過部材の前記光出射面と対向する前記バンドパスフィルタの光入射面のうち角領域を除く領域に配置されておらず、前記角領域に配置されている、請求項6記載の光検出装置。
- 前記接着部材のうち前記バンドパスフィルタの前記外縁から外側に突出した前記部分は、前記バンドパスフィルタの側面に接触している、請求項7又は8記載の光検出装置。
- 前記ラインに平行な方向から見た場合に、前記開口の形状は、円形状である、請求項6〜9のいずれか一項記載の光検出装置。
- 前記バンドパスフィルタの形状は、四角形板状である、請求項6〜10のいずれか一項記載の光検出装置。
- 前記パッケージは、金属材料によって形成されている、請求項6〜11のいずれか一項記載の光検出装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP2015196516 | 2015-10-02 | ||
JP2015196516 | 2015-10-02 | ||
JP2016109495 | 2016-05-31 | ||
JP2016109495 | 2016-05-31 | ||
PCT/JP2016/078476 WO2017057372A1 (ja) | 2015-10-02 | 2016-09-27 | 光検出装置 |
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JPWO2017057372A1 JPWO2017057372A1 (ja) | 2018-07-19 |
JP6945450B2 true JP6945450B2 (ja) | 2021-10-06 |
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US (3) | US10656020B2 (ja) |
EP (1) | EP3358320B1 (ja) |
JP (1) | JP6945450B2 (ja) |
KR (1) | KR20180062463A (ja) |
CN (2) | CN113358223B (ja) |
TW (1) | TWI743053B (ja) |
WO (1) | WO2017057372A1 (ja) |
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JP5987573B2 (ja) | 2012-09-12 | 2016-09-07 | セイコーエプソン株式会社 | 光学モジュール、電子機器、及び駆動方法 |
JP7039160B2 (ja) * | 2016-03-09 | 2022-03-22 | 浜松ホトニクス株式会社 | 光検出装置 |
JP7142419B2 (ja) | 2017-05-01 | 2022-09-27 | 浜松ホトニクス株式会社 | 光計測制御プログラム、光計測システム及び光計測方法 |
KR102669193B1 (ko) | 2017-06-13 | 2024-05-28 | 하마마츠 포토닉스 가부시키가이샤 | 광학 필터 시스템 |
JP6517309B1 (ja) * | 2017-11-24 | 2019-05-22 | 浜松ホトニクス株式会社 | 異物除去方法、及び光検出装置の製造方法 |
JP7313115B2 (ja) | 2017-11-24 | 2023-07-24 | 浜松ホトニクス株式会社 | 光検査装置及び光検査方法 |
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