JP6827246B2 - Method for producing halogenated butene compound - Google Patents
Method for producing halogenated butene compound Download PDFInfo
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- JP6827246B2 JP6827246B2 JP2019029424A JP2019029424A JP6827246B2 JP 6827246 B2 JP6827246 B2 JP 6827246B2 JP 2019029424 A JP2019029424 A JP 2019029424A JP 2019029424 A JP2019029424 A JP 2019029424A JP 6827246 B2 JP6827246 B2 JP 6827246B2
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- -1 halogenated butene compound Chemical class 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000003054 catalyst Substances 0.000 claims description 86
- 229910000039 hydrogen halide Inorganic materials 0.000 claims description 43
- 239000012433 hydrogen halide Substances 0.000 claims description 43
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 16
- 125000001153 fluoro group Chemical group F* 0.000 claims description 9
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 238000003786 synthesis reaction Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000004429 atom Chemical group 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 59
- 150000001875 compounds Chemical class 0.000 description 50
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 30
- 239000000758 substrate Substances 0.000 description 30
- MJBPUQUGJNAPAZ-UHFFFAOYSA-N Butine Natural products O1C2=CC(O)=CC=C2C(=O)CC1C1=CC=C(O)C(O)=C1 MJBPUQUGJNAPAZ-UHFFFAOYSA-N 0.000 description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 20
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- 238000007259 addition reaction Methods 0.000 description 15
- 125000005843 halogen group Chemical group 0.000 description 15
- 239000012025 fluorinating agent Substances 0.000 description 12
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 11
- 229910000423 chromium oxide Inorganic materials 0.000 description 11
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 11
- 238000003682 fluorination reaction Methods 0.000 description 11
- 229910021536 Zeolite Inorganic materials 0.000 description 10
- 239000011968 lewis acid catalyst Substances 0.000 description 10
- 239000010457 zeolite Substances 0.000 description 10
- 239000012071 phase Substances 0.000 description 9
- 125000000383 tetramethylene group Chemical class [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- VQWFNAGFNGABOH-UHFFFAOYSA-K chromium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Cr+3] VQWFNAGFNGABOH-UHFFFAOYSA-K 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000004949 mass spectrometry Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 238000012916 structural analysis Methods 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- MJBPUQUGJNAPAZ-AWEZNQCLSA-N butin Chemical class C1([C@@H]2CC(=O)C3=CC=C(C=C3O2)O)=CC=C(O)C(O)=C1 MJBPUQUGJNAPAZ-AWEZNQCLSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004438 BET method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003610 charcoal Substances 0.000 description 2
- 239000007809 chemical reaction catalyst Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- PHFQLYPOURZARY-UHFFFAOYSA-N chromium trinitrate Chemical compound [Cr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PHFQLYPOURZARY-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- NUPBXTZOBYEVIR-UHFFFAOYSA-N 1,1,2,3,3,4,4-heptafluorobut-1-ene Chemical compound FC(F)C(F)(F)C(F)=C(F)F NUPBXTZOBYEVIR-UHFFFAOYSA-N 0.000 description 1
- 239000004484 Briquette Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- XWCDCDSDNJVCLO-UHFFFAOYSA-N Chlorofluoromethane Chemical class FCCl XWCDCDSDNJVCLO-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021555 Chromium Chloride Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 1
- GRWVQDDAKZFPFI-UHFFFAOYSA-H chromium(III) sulfate Chemical compound [Cr+3].[Cr+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O GRWVQDDAKZFPFI-UHFFFAOYSA-H 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 125000006575 electron-withdrawing group Chemical group 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000007039 two-step reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/07—Preparation of halogenated hydrocarbons by addition of hydrogen halides
- C07C17/087—Preparation of halogenated hydrocarbons by addition of hydrogen halides to unsaturated halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
- C07B61/00—Other general methods
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C19/00—Acyclic saturated compounds containing halogen atoms
- C07C19/08—Acyclic saturated compounds containing halogen atoms containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C21/00—Acyclic unsaturated compounds containing halogen atoms
- C07C21/02—Acyclic unsaturated compounds containing halogen atoms containing carbon-to-carbon double bonds
- C07C21/18—Acyclic unsaturated compounds containing halogen atoms containing carbon-to-carbon double bonds containing fluorine
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
- Drying Of Semiconductors (AREA)
Description
本開示は、ハロゲン化ブテン化合物の製造方法に関する。 The present disclosure relates to a method for producing a halogenated butene compound.
ヘプタフルオロブテンに代表される7個のハロゲン原子を有するブテン化合物は、半導体用ドライエッチングガスの他、クリーニングガス、有機合成用ビルディングブロック等として期待される化合物である。 A butene compound having seven halogen atoms represented by heptafluorobutene is a compound expected as a cleaning gas, a building block for organic synthesis, etc., in addition to a dry etching gas for semiconductors.
この7個のハロゲン原子を有するブテン化合物の製造方法として、例えば、非特許文献1では、CF3C≡CCF3とAgFとを反応させてCF3CF=C(CF3)Agを得た後に、アセトニトリル中でHClと反応させてCF3CF=CHCF3を得ている。 As a method for producing a butene compound having seven halogen atoms, for example, in Non-Patent Document 1, after CF 3 C ≡ CCF 3 and Ag F are reacted to obtain CF 3 CF = C (CF 3 ) Ag. , CF 3 CF = CHCF 3 is obtained by reacting with HCl in acetonitrile.
本開示は、転化率が高く、7個のハロゲン原子を有するブテン化合物を高選択率で得ることができる方法を提供することを目的とする。 An object of the present disclosure is to provide a method capable of obtaining a butene compound having a high conversion rate and having 7 halogen atoms with a high selectivity.
本開示は、以下の構成を包含する。
項1.一般式(1):
CX1X2X3CX4=CHCX7X8X9 (1)
[式中、X1、X2、X3、X4、X7、X8及びX9は同一又は異なって、ハロゲン原子を示す。]
で表されるハロゲン化ブテン化合物の製造方法であって、
触媒の存在下に、
一般式(2):
CX1X2X3C≡CCX7X8X9 (2)
[式中、X1、X2、X3、X7、X8及びX9は前記に同じである。]
で表されるハロゲン化ブチン化合物と、ハロゲン化水素とを反応させる工程
を備える、製造方法。
項2.前記一般式(1)で表されるハロゲン化ブテン化合物がCF3CF=CHCF3であり、且つ、前記一般式(2)で表されるハロゲン化ブチン化合物がCF3C≡CCF3である、項1に記載の製造方法。
項3.前記触媒が、フッ素化若しくは非フッ素化活性炭触媒、並びにフッ素化若しくは非フッ素化ルイス酸触媒よりなる群から選ばれる少なくとも1種を含む、項1又は2に記載の製造方法。
項4.前記触媒がフッ素化若しくは非フッ素化ルイス酸触媒であり、前記ルイス酸触媒が、酸化クロム触媒、アルミナ触媒、シリカアルミナ触媒、及びゼオライト触媒よりなる群から選ばれる少なくとも1種である、項1〜3のいずれか1項に記載の製造方法。
項5.前記一般式(2)で表されるハロゲン化ブチン化合物1モルに対して、30〜250モルのハロゲン化水素を反応させる、項1〜4のいずれか1項に記載の製造方法。
項6.一般式(1):
CX1X2X3CX4=CHCX7X8X9 (1)
[式中、X1、X2、X3、X4、X7、X8及びX9は同一又は異なって、ハロゲン原子を示す。]
で表されるハロゲン化ブテン化合物と、
一般式(3):
CX1X2X3CX4X5CHX6CX7X8X9 (3)
[式中、X1、X2、X3、X4、X7、X8及びX9は前記に同じである、X5及びX6は片方が水素原子を示し、他方がハロゲン原子を示す。]
で表されるハロゲン化ブタン化合物とを含有する組成物であって、
組成物全量を100モル%として、前記一般式(1)で表されるハロゲン化ブテン化合物の含有量が91.00〜99.99モル%である、組成物。
項7.クリーニングガス、エッチングガス又は有機合成用ビルディングブロックとして用いられる、項6に記載の組成物。
The present disclosure includes the following configurations.
Item 1. General formula (1):
CX 1 X 2 X 3 CX 4 = CHCX 7 X 8 X 9 (1)
[In the equation, X 1 , X 2 , X 3 , X 4 , X 7 , X 8 and X 9 indicate the same or different halogen atoms. ]
It is a method for producing a halogenated butene compound represented by.
In the presence of catalyst
General formula (2):
CX 1 X 2 X 3 C ≡ CCX 7 X 8 X 9 (2)
[In the equation, X 1 , X 2 , X 3 , X 7 , X 8 and X 9 are the same as above. ]
A production method comprising a step of reacting a halogenated butin compound represented by (1) with hydrogen halide.
Item 2. The halogenated butene compound represented by the general formula (1) is CF 3 CF = CHCF 3, and the halogenated butyne compound represented by the general formula (2) is CF 3 C≡CCF 3, Item 1. The manufacturing method according to Item 1.
Item 3. Item 2. The production method according to Item 1 or 2, wherein the catalyst comprises at least one selected from the group consisting of a fluorinated or non-fluorinated activated carbon catalyst and a fluorinated or non-fluorinated Lewis acid catalyst.
Item 4. Item 1 to which the catalyst is a fluorinated or non-fluorinated Lewis acid catalyst, and the Lewis acid catalyst is at least one selected from the group consisting of a chromium oxide catalyst, an alumina catalyst, a silica alumina catalyst, and a zeolite catalyst. The production method according to any one of 3.
Item 5. Item 8. The production method according to any one of Items 1 to 4, wherein 30 to 250 mol of hydrogen halide is reacted with 1 mol of the halogenated butin compound represented by the general formula (2).
Item 6. General formula (1):
CX 1 X 2 X 3 CX 4 = CHCX 7 X 8 X 9 (1)
[In the equation, X 1 , X 2 , X 3 , X 4 , X 7 , X 8 and X 9 indicate the same or different halogen atoms. ]
Halogenated butene compound represented by
General formula (3):
CX 1 X 2 X 3 CX 4 X 5 CHX 6 CX 7 X 8 X 9 (3)
[In the equation, X 1 , X 2 , X 3 , X 4 , X 7 , X 8 and X 9 are the same as above, X 5 and X 6 indicate a hydrogen atom on one side and a halogen atom on the other side. .. ]
A composition containing a halogenated butane compound represented by.
A composition in which the content of the halogenated butene compound represented by the general formula (1) is 91.00 to 99.99 mol%, where the total amount of the composition is 100 mol%.
Item 7. Item 6. The composition according to Item 6, which is used as a cleaning gas, an etching gas, or a building block for organic synthesis.
本開示によれば、転化率が高く、高選択率で得られる方法で、7個のハロゲン原子を有するブテン化合物を合成することができる。 According to the present disclosure, a butene compound having 7 halogen atoms can be synthesized by a method obtained with a high conversion rate and a high selectivity.
本明細書において、「含有」は、「含む(comprise)」、「実質的にのみからなる(consist essentially of)」、及び「のみからなる(consist of)」のいずれも包含する概念である。また、本明細書において、数値範囲を「A〜B」で示す場合、A以上B以下を意味する。 As used herein, "contains" is a concept that includes any of "comprise," "consist essentially of," and "consist of." Further, in the present specification, when the numerical range is indicated by "A to B", it means A or more and B or less.
本開示において、「選択率」とは、反応器出口からの流出ガスにおける原料化合物以外の化合物の合計モル量に対する、当該流出ガスに含まれる目的化合物の合計モル量の割合(モル%)を意味する。 In the present disclosure, the "selectivity" means the ratio (mol%) of the total molar amount of the target compound contained in the effluent gas to the total molar amount of the compound other than the raw material compound in the effluent gas from the reactor outlet. To do.
本開示において、「転化率」とは、反応器に供給される原料化合物のモル量に対する、反応器出口からの流出ガスに含まれる原料化合物以外の化合物の合計モル量の割合(モル%)を意味する。 In the present disclosure, the "conversion rate" is the ratio (mol%) of the total molar amount of compounds other than the raw material compound contained in the outflow gas from the reactor outlet to the molar amount of the raw material compound supplied to the reactor. means.
従来は、非特許文献1の方法によれば、CF3C≡CCF3とAgFとを反応させてCF3CF=C(CF3)Agを得た後に、アセトニトリル中でHClと反応させてCF3CF=CHCF3を得ているが、2段階の反応が必要になるうえに、合計収率は57%に過ぎなかった。 Conventionally, according to the method of Non-Patent Document 1, CF 3 C ≡ CCF 3 and Ag F are reacted to obtain CF 3 CF = C (CF 3 ) Ag, and then the reaction is carried out with HCl in acetonitrile to obtain CF. Although 3 CF = CHCF 3 was obtained, a two-step reaction was required and the total yield was only 57%.
以上から、従来の方法によれば、収率は57%に過ぎず、また、工程数も多い反応であった。本開示の製造方法によれば、従来と比較しても、転化率が高く、高選択率で得られる方法で、7個のハロゲン原子を有するブテン化合物を合成することができる。 From the above, according to the conventional method, the yield was only 57%, and the reaction had a large number of steps. According to the production method of the present disclosure, a butene compound having 7 halogen atoms can be synthesized by a method obtained with a high conversion rate and a high selectivity as compared with the conventional method.
1.ハロゲン化ブテン化合物の製造方法
本開示のハロゲン化ブテン化合物の製造方法は、
一般式(1):
CX1X2X3CX4=CHCX7X8X9 (1)
[式中、X1、X2、X3、X4、X7、X8及びX9は同一又は異なって、ハロゲン原子を示す。]
で表されるハロゲン化ブテン化合物の製造方法であって、
触媒の存在下に、
一般式(2):
CX1X2X3C≡CCX7X8X9 (2)
[式中、X1、X2、X3、X7、X8及びX9は前記に同じである。]
で表されるハロゲン化ブチン化合物と、ハロゲン化水素とを反応させる工程
を備える。
1. 1. Method for Producing Halogenated Butene Compound The method for producing the halogenated butene compound of the present disclosure is as follows.
General formula (1):
CX 1 X 2 X 3 CX 4 = CHCX 7 X 8 X 9 (1)
[In the equation, X 1 , X 2 , X 3 , X 4 , X 7 , X 8 and X 9 indicate the same or different halogen atoms. ]
It is a method for producing a halogenated butene compound represented by.
In the presence of catalyst
General formula (2):
CX 1 X 2 X 3 C ≡ CCX 7 X 8 X 9 (2)
[In the equation, X 1 , X 2 , X 3 , X 7 , X 8 and X 9 are the same as above. ]
The present invention comprises a step of reacting the halogenated butin compound represented by (1) with hydrogen halide.
本開示の製造方法において、一般式(2)で表されるハロゲン化ブチン化合物と、ハロゲン化水素との反応は、無触媒で行うと、一般式(2)で表されるハロゲン化ブチン化合物1モルに対して2モルのハロゲン化水素が付加した一般式(3):
CX1X2X3CX4X5CHX6CX7X8X9 (3)
[式中、X1、X2、X3、X4、X7、X8及びX9は前記に同じである、X5及びX6は片方が水素原子を示し、他方がハロゲン原子を示す。]
で表されるハロゲン化ブタン化合物が副生成物として相当程度(例えば9.00モル%より多量)生成される。
In the production method of the present disclosure, when the reaction between the halogenated butin compound represented by the general formula (2) and hydrogen halide is carried out without a catalyst, the halogenated butin compound 1 represented by the general formula (2) is carried out. General formula (3): 2 mol of hydrogen halide added to mol
CX 1 X 2 X 3 CX 4 X 5 CHX 6 CX 7 X 8 X 9 (3)
[In the equation, X 1 , X 2 , X 3 , X 4 , X 7 , X 8 and X 9 are the same as above, X 5 and X 6 indicate a hydrogen atom on one side and a halogen atom on the other side. .. ]
A considerable amount (for example, more than 9.00 mol%) of the halogenated butane compound represented by is produced as a by-product.
一方、上記した一般式(2)で表されるハロゲン化ブチン化合物と、ハロゲン化水素との反応を触媒の存在下で行うことで、一般式(2)で表されるハロゲン化ブチン化合物1モルに対して2モルのハロゲン化水素が付加することは抑制され、一般式(2)で表されるハロゲン化ブチン化合物1モルに対して1モルのハロゲン化水素が付加した一般式(1)で表されるハロゲン化ブテン化合物を選択的に得ることができる。これは、トリハロゲン化メチル基(CX1X2X3及びCX7X8X9)は強力な電子吸引基の効果によるものである。その強力な電子吸引効果により、トリハロゲン化メチル基は隣接する二重結合や三重結合の電子の電子密度を下げるため、その不飽和結合への付加反応が起こりにくくなる。ハロゲン化ブチン化合物は、三重結合をもつためその反応性の高さから容易にハロゲン化水素の付加反応がおこるが、ハロゲン化ブテン化合物はトリハロゲン化メチル基の効果により、ハロゲン化水素と反応せずハロゲン化ブタン化合物にはならず、ハロゲン化ブテン化合物を選択的に得ることができる。 On the other hand, by carrying out the reaction between the hydrogen halide compound represented by the general formula (2) and hydrogen halide in the presence of a catalyst, 1 mol of the halogenated butine compound represented by the general formula (2) is carried out. The addition of 2 mol of hydrogen halide was suppressed, and 1 mol of hydrogen halide was added to 1 mol of the butin halide compound represented by the general formula (2) according to the general formula (1). The represented halogenated butene compound can be selectively obtained. This is due to the effect of the methyl trihalogenated groups (CX 1 X 2 X 3 and CX 7 X 8 X 9 ) as strong electron-withdrawing groups. Due to its strong electron-withdrawing effect, the trihalogenated methyl group lowers the electron density of adjacent double or triple bonds, making it difficult for the addition reaction to the unsaturated bond to occur. Since the butine halide compound has a triple bond, the addition reaction of hydrogen halide easily occurs due to its high reactivity, but the butene halide compound reacts with hydrogen halide due to the effect of the methyl trihalogenate group. It does not become a halogenated butane compound, and a halogenated butene compound can be selectively obtained.
本開示の製造方法において使用できる基質としてのハロゲン化ブチン化合物は、上記のとおり、一般式(2):
CX1X2X3C≡CCX7X8X9 (2)
[式中、X1、X2、X3、X7、X8及びX9は同一又は異なって、ハロゲン原子を示す。]
で表されるハロゲン化ブチン化合物である。
As described above, the halogenated butin compound as a substrate that can be used in the production method of the present disclosure has the general formula (2):
CX 1 X 2 X 3 C ≡ CCX 7 X 8 X 9 (2)
[In the equation, X 1 , X 2 , X 3 , X 7 , X 8 and X 9 indicate the same or different halogen atoms. ]
It is a halogenated butin compound represented by.
一般式(2)において、X1、X2、X3、X7、X8及びX9で示されるハロゲン原子としては、フッ素原子、塩素原子、臭素原子及びヨウ素原子が挙げられる。 In the general formula (2), examples of the halogen atom represented by X 1 , X 2 , X 3 , X 7 , X 8 and X 9 include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.
基質であるハロゲン化ブチン化合物としては、ハロゲン化ブテン化合物を特に、高い転化率、収率及び選択率で製造することができる観点において、X1、X2、X3、X7、X8及びX9はいずれも、フッ素原子が好ましい。 As the halogenated butene compound as a substrate, X 1 , X 2 , X 3 , X 7 , X 8 and X 1 , X 2 , X 3 , X 7 , X 8 and X 1 , X 2 , X 3 , X 7 , X 8 and X 1 , X 2 , X 3 , X 8, and X 8 Fluorine atoms are preferable for all X 9 .
上記したX1、X2、X3、X7、X8及びX9は、それぞれ同一でもよいし、異なっていてもよい。 The above-mentioned X 1 , X 2 , X 3 , X 7 , X 8 and X 9 may be the same or different, respectively.
上記のような条件を満たす基質としてのハロゲン化ブチン化合物としては、具体的には、CF3C≡CCF3、CCl3C≡CCCl3、CBr3C≡CCBr3等が挙げられる。これらのハロゲン化ブチン化合物は、単独で用いることもでき、2種以上を組合せて用いることもできる。このようなハロゲン化ブチン化合物は、公知又は市販品を採用することができる。また、特開2012−001448号公報等の常法にしたがって合成することも可能である。 The halogenated butyne compound as satisfying a substrate as described above, specifically, CF 3 C≡CCF 3, CCl 3 C≡CCCl 3, CBr 3 C≡CCBr 3 , and the like. These halogenated butin compounds can be used alone or in combination of two or more. As such a halogenated butin compound, a known or commercially available product can be adopted. It is also possible to synthesize according to a conventional method such as Japanese Patent Application Laid-Open No. 2012-001448.
ハロゲン化ブチン化合物と反応させるハロゲン化水素としては、フッ化水素、塩化水素、臭化水素等が挙げられる。なお、反応の転化率、収率及び選択率の観点からは、フッ化水素が好ましい。これらのハロゲン化水素は、単独で使用することもでき、2種以上を組合せて用いることもできる。 Examples of the hydrogen halide to react with the halogenated butin compound include hydrogen fluoride, hydrogen chloride, hydrogen bromide and the like. Hydrogen fluoride is preferable from the viewpoint of the conversion rate, yield and selectivity of the reaction. These hydrogen halides can be used alone or in combination of two or more.
ハロゲン化水素は、通常、ハロゲン化ブチン化合物(基質)とともに、気相状態で反応器に供給することが好ましい。ハロゲン化ブチン化合物(基質)と反応させるハロゲン化水素の供給量は、ハロゲン化ブチン化合物(基質)1モルに対して、30〜250モルが好ましく、35〜240モルがより好ましく、40〜230モルがさらに好ましい。この範囲とすることにより、ハロゲン化水素による付加反応をより良好に進行させつつも、ハロゲン化水素による過度な付加反応をより抑制することで、不純物の生成をより低減することができ、生成物のハロゲン化ブテン化合物の選択率が高く、高収率で回収することができる。 It is usually preferable that the hydrogen halide is supplied to the reactor in a vapor phase state together with the halogenated butin compound (substrate). The supply amount of hydrogen halide to be reacted with the halogenated butin compound (substrate) is preferably 30 to 250 mol, more preferably 35 to 240 mol, and 40 to 230 mol with respect to 1 mol of the halogenated butin compound (substrate). Is even more preferable. Within this range, the addition reaction by hydrogen halide can proceed more satisfactorily, and the excessive addition reaction by hydrogen halide can be further suppressed, so that the formation of impurities can be further reduced, and the product can be produced. The selectivity of the halogenated butene compound is high, and it can be recovered in high yield.
本開示におけるハロゲン化ブチン化合物とハロゲン化水素とを反応させる工程は、ハロゲン化水素による付加反応であり、触媒の存在下に行う。本開示の製造方法におけるハロゲン化ブチン化合物とハロゲン化水素とを反応させる工程(付加反応)では、気相、特に固定床反応器を用いた気相連続流通式で行うことが好ましい。気相連続流通式で行う場合は、装置、操作等を簡略化できるとともに、経済的に有利である。 The step of reacting the halogenated butine compound with hydrogen halide in the present disclosure is an addition reaction with hydrogen halide and is carried out in the presence of a catalyst. In the step (addition reaction) of reacting the halogenated butine compound with hydrogen halide in the production method of the present disclosure, it is preferable to carry out the gas phase, particularly the gas phase continuous flow system using a fixed bed reactor. When the gas phase continuous flow system is used, the equipment, operation, etc. can be simplified and it is economically advantageous.
本開示におけるハロゲン化ブチン化合物とハロゲン化水素とを反応させる工程では、例えば、基質として、一般式(2)で表されるハロゲン化ブチン化合物では、X1、X2、X3、X7、X8及びX9は、フッ素原子であることがより好ましい。 In the step of reacting the halogenated butine compound with hydrogen halide in the present disclosure, for example, in the halogenated butin compound represented by the general formula (2) as a substrate, X 1 , X 2 , X 3 , X 7 , More preferably, X 8 and X 9 are fluorine atoms.
つまり、以下の反応式:
CF3C≡CCF3 + HF → CF3CF=CHCF3
に従い、フッ化水素による付加反応であることが好ましい。
That is, the following reaction formula:
CF 3 C≡CCF 3 + HF → CF 3 CF = CHCF 3
Therefore, it is preferable that the addition reaction is carried out by hydrogen fluoride.
本開示の製造方法において使用される触媒としては、フッ素化若しくは非フッ素化活性炭触媒、フッ素化若しくは非フッ素化ルイス酸触媒等が好ましい。 As the catalyst used in the production method of the present disclosure, a fluorinated or non-fluorinated activated carbon catalyst, a fluorinated or non-fluorinated Lewis acid catalyst and the like are preferable.
活性炭触媒としては、特に制限はなく、破砕炭、成形炭、顆粒炭、球状炭等の粉末活性炭が挙げられる。粉末活性炭は、JIS試験(JIS Z8801)で、4メッシュ(4.75mm)〜100メッシュ(0.150mm)の粒度を示す粉末活性炭を用いることが好ましい。これらの活性炭は、公知又は市販品を採用することができる。 The activated carbon catalyst is not particularly limited, and examples thereof include powdered activated carbon such as crushed carbon, briquette, granular charcoal, and spherical charcoal. As the powdered activated carbon, it is preferable to use powdered activated carbon having a particle size of 4 mesh (4.75 mm) to 100 mesh (0.150 mm) in a JIS test (JIS Z8801). As these activated carbons, known or commercially available products can be adopted.
活性炭は、フッ素化することにより、より強い活性を示すようになるため、反応に用いる前に、予め活性炭をフッ素化したフッ素化活性炭を用いることもできる。つまり、活性炭触媒としては、フッ素化されていない活性炭及びフッ素化活性炭のいずれも使用することができる。 Since the activated carbon exhibits stronger activity by fluorination, it is also possible to use a fluorinated activated carbon in which the activated carbon is fluorinated in advance before being used in the reaction. That is, as the activated carbon catalyst, either non-fluorinated activated carbon or fluorinated activated carbon can be used.
活性炭をフッ素化するためのフッ素化剤としては、例えば、HF等の無機フッ素化剤の他、ヘキサフルオロプロペン等のハイドロフルオロカーボン(HFC)、クロロフルオロメタン等のクロロフルオロカーボン(CFC)、ハイドロクロロフルオロカーボン(HCFC)等の有機フッ素化剤も用いることができる。 Examples of the fluorinating agent for fluorinating activated carbon include inorganic fluorinating agents such as HF, hydrofluorocarbons (HFCs) such as hexafluoropropene, chlorofluorocarbons (CFC) such as chlorofluoromethanes, and hydrochlorofluorocarbons. Organic fluorinating agents such as (HCFC) can also be used.
活性炭をフッ素化する方法としては、例えば、室温(25℃)〜400℃程度の温度条件下に大気圧下で上記したフッ素化剤を流通させてフッ素化する方法を挙げることができる。 Examples of the method for fluorinating activated carbon include a method in which the above-mentioned fluorinating agent is circulated under atmospheric pressure under a temperature condition of about room temperature (25 ° C.) to 400 ° C. to fluorinate.
ルイス酸触媒としては、特に制限はなく、酸化クロム触媒、アルミナ触媒、シリカアルミナ触媒、ゼオライト触媒等が挙げられる。これらのルイス酸触媒は、フッ素化されていないルイス酸触媒及びフッ素化されたルイス酸触媒のいずれも採用することができる。 The Lewis acid catalyst is not particularly limited, and examples thereof include a chromium oxide catalyst, an alumina catalyst, a silica-alumina catalyst, and a zeolite catalyst. As these Lewis acid catalysts, either a non-fluorinated Lewis acid catalyst or a fluorinated Lewis acid catalyst can be adopted.
酸化クロム触媒については、特に制限されないが、酸化クロムをCrOmで表記した場合に、1.5<m<3が好ましく、2<m<2.75がより好ましく、2<m<2.3がさらに好ましい。また、酸化クロムをCrOm・nH2Oで表記した場合に、nの値が3以下、特に1〜1.5となるように水和していてもよい。 The chromium oxide catalyst is not particularly limited, but when chromium oxide is expressed in CrOm, 1.5 <m <3 is preferable, 2 <m <2.75 is more preferable, and 2 <m <2.3 is further preferable. Further, when chromium oxide is expressed in terms of CrO m · nH 2 O, it may be hydrated so that the value of n is 3 or less, particularly 1 to 1.5.
フッ素化された酸化クロム触媒は、上記した酸化クロム触媒のフッ素化により調製することができる。このフッ素化は、例えば、HF、フルオロカーボン等を用いて行うことができる。このようなフッ素化された酸化クロム触媒は、例えば、特開平05−146680号公報に記載されている方法にしたがって合成することができる。 The fluorinated chromium oxide catalyst can be prepared by fluorination of the chromium oxide catalyst described above. This fluorination can be performed using, for example, HF, fluorocarbon, or the like. Such a fluorinated chromium oxide catalyst can be synthesized, for example, according to the method described in JP-A-05-146680.
以下、酸化クロム触媒及びフッ素化された酸化クロム触媒の合成方法の一例を示す。 The following is an example of a method for synthesizing a chromium oxide catalyst and a fluorinated chromium oxide catalyst.
まず、クロム塩の水溶液(硝酸クロム、塩化クロム、クロムみょうばん、硫酸クロム等)とアンモニア水とを混合することよって水酸化クロムの沈殿を得ることができる。この時の沈澱反応の反応速度により水酸化クロムの物性を制御することができる。反応速度は、速いことが好ましい。反応速度は反応溶液温度、アンモニア水混合方法(混合速度)、撹拌状態等により左右される。 First, a precipitate of chromium hydroxide can be obtained by mixing an aqueous solution of a chromium salt (chromium nitrate, chromium chloride, chromium alum, chromium sulfate, etc.) with aqueous ammonia. The physical properties of chromium hydroxide can be controlled by the reaction rate of the precipitation reaction at this time. The reaction rate is preferably fast. The reaction rate depends on the reaction solution temperature, the ammonia water mixing method (mixing rate), the stirring state, and the like.
この沈澱を濾過洗浄後、乾燥することができる。乾燥は、例えば、空気中、70〜200℃で、1〜100時間行うことができる。この段階の触媒を水酸化クロムの状態と呼ぶことがある。次いで、この触媒を解砕することができる。ペレットの強度、触媒の活性等の観点から、解砕された粉末(例えば、粒径は1000μm以下、特に46〜1000μmの粒径品が95%)の粉体密度が0.6〜1.1g/ml、好ましくは0.6〜1.0g/mlになるように沈澱反応速度を調整することが好ましい。粉体の比表面積(BET法による比表面積)は例えば200℃、80分の脱気条件で、100m2/g以上が好ましく、120m2/g以上がより好ましい。なお、比表面積の上限は、例えば、220m2/g程度である。 This precipitate can be filtered and washed and then dried. Drying can be performed, for example, in air at 70-200 ° C. for 1-100 hours. The catalyst at this stage is sometimes referred to as the chromium hydroxide state. The catalyst can then be crushed. From the viewpoint of pellet strength, catalyst activity, etc., the powder density of the crushed powder (for example, the particle size is 1000 μm or less, especially 95% of the products with a particle size of 46 to 1000 μm) is 0.6 to 1.1 g / ml. It is preferable to adjust the precipitation reaction rate so as to preferably be 0.6 to 1.0 g / ml. The specific surface area of the powder (specific surface area by the BET method) is preferably 100 m 2 / g or more, more preferably 120 m 2 / g or more under degassing conditions of, for example, 200 ° C. for 80 minutes. The upper limit of the specific surface area is, for example, about 220 m 2 / g.
この水酸化クロムの粉体に、要すればグラファイトを3重量%以下混合し、打錠機によりペレットを形成することができる。ペレットのサイズ及び強度は適宜調整することができる。 If necessary, graphite can be mixed with this chromium hydroxide powder in an amount of 3% by weight or less, and pellets can be formed by a tableting machine. The size and strength of the pellets can be adjusted as appropriate.
成形された触媒を不活性雰囲気中、例えば窒素気流中焼成し、非晶質の酸化クロムとすることができる。この焼成温度は360℃以上が好ましく、結晶化抑制の観点からは、380〜460℃が好ましい。また、焼成時間は、例えば1〜5時間とすることができる。 The molded catalyst can be calcined in an inert atmosphere, for example in a nitrogen stream, to give amorphous chromium oxide. The firing temperature is preferably 360 ° C. or higher, and preferably 380 to 460 ° C. from the viewpoint of suppressing crystallization. The firing time can be, for example, 1 to 5 hours.
焼成された触媒の比表面積は、触媒の活性の観点から、例えば170m2/g以上が好ましく、180m2/g以上がより好ましく、200m2/g以上がさらに好ましい。なお、比表面積の上限は、通常、240m2/g程度が好ましく、220m2/g程度がより好ましい。 From the viewpoint of catalyst activity, the specific surface area of the calcined catalyst is preferably 170 m 2 / g or more, more preferably 180 m 2 / g or more, and even more preferably 200 m 2 / g or more. The upper limit of the specific surface area is generally preferably about 240 m 2 / g, about 220 m 2 / g is more preferable.
次いで、酸化クロムをフッ素化することによってフッ素化された酸化クロムを得ることができる。フッ素化の温度は、生成する水が凝縮しない温度範囲とすればよく、反応熱により触媒が結晶化しない温度を上限とすればよい。フッ素化の温度は、例えば100〜460℃とすることができる。フッ素化時の圧力に制限はないが、触媒反応に供される時の圧力で行うことが好ましい。 Then, by fluorinating the chromium oxide, the fluorinated chromium oxide can be obtained. The temperature of fluorination may be in the temperature range in which the generated water does not condense, and the upper limit may be the temperature at which the catalyst does not crystallize due to the heat of reaction. The temperature of fluorination can be, for example, 100 to 460 ° C. The pressure at the time of fluorination is not limited, but it is preferable to carry out at the pressure at the time of being subjected to the catalytic reaction.
アルミナ触媒としては、例えば、α-アルミナ、活性アルミナ等が挙げられる。活性アルミナとしては、ρ-アルミナ、χ-アルミナ、κ-アルミナ、η-アルミナ、擬γ-アルミナ、γ-アルミナ、σ-アルミナ、θ-アルミナ等が挙げられる。 Examples of the alumina catalyst include α-alumina and activated alumina. Examples of the active alumina include ρ-alumina, χ-alumina, κ-alumina, η-alumina, pseudo-γ-alumina, γ-alumina, σ-alumina, and θ-alumina.
また、複合酸化物としてシリカアルミナ触媒も用いることができる。シリカアルミナ触媒は、シリカ(SiO2)及びアルミナ(Al2O3)を含む複合酸化物触媒であり、シリカ及びアルミナの総量を100質量%として、例えば、シリカの含有量が20〜90質量%、特に50〜80質量%の触媒を使用することができる。 A silica-alumina catalyst can also be used as the composite oxide. The silica-alumina catalyst is a composite oxide catalyst containing silica (SiO 2 ) and alumina (Al 2 O 3 ), and the total amount of silica and alumina is 100% by mass, for example, the content of silica is 20 to 90% by mass. In particular, 50-80% by mass of catalyst can be used.
アルミナ触媒及びシリカアルミナ触媒は、フッ素化することにより、より強い活性を示すようになるため、反応に用いる前に、予めアルミナ触媒をフッ素化してフッ素化アルミナ触媒として用いることもでき、シリカアルミナ触媒をフッ素化してフッ素化シリカアルミナ触媒として用いることもできる。 Since the alumina catalyst and the silica-alumina catalyst exhibit stronger activity by fluorination, the alumina catalyst can be fluorinated in advance and used as the fluorinated alumina catalyst before being used in the reaction. Can also be fluorinated and used as a fluorinated silica-alumina catalyst.
アルミナ触媒及びシリカアルミナ触媒をフッ素化するためのフッ素化剤としては、例えば、F2、HF等の無機フッ素化剤、ヘキサフルオロプロペン等のフルオロカーボン系の有機フッ素化剤等を用いることができる。 The fluorinating agent for fluorination of alumina catalyst and silica-alumina catalysts, for example, can be used F 2, inorganic fluorinating agents such as HF, fluorocarbon-based organic fluorinating agent such as hexafluoropropene, and the like.
アルミナ触媒及びシリカアルミナ触媒をフッ素化する方法としては、例えば、室温(25℃)〜400℃程度の温度条件下に大気圧下で上記したフッ素化剤を流通させてフッ素化する方法を挙げることができる。 Examples of the method for fluorinating the alumina catalyst and the silica-alumina catalyst include a method in which the above-mentioned fluorinating agent is circulated under atmospheric pressure under a temperature condition of about room temperature (25 ° C.) to 400 ° C. for fluorination. Can be done.
ゼオライト触媒としては、公知の種類のゼオライトを広く採用することができる。例えば、アルカリ金属又はアルカリ土類金属の結晶性含水アルミノ珪酸塩が好ましい。ゼオライトの結晶形は、特に限定されず、A型、X型、LSX型等が挙げられる。ゼオライト中のアルカリ金属又はアルカリ土類金属は、特に限定されず、カリウム、ナトリウム、カルシウム、リチウム等が挙げられる。 As the zeolite catalyst, known types of zeolite can be widely adopted. For example, crystalline hydrous aluminosilicates of alkali metals or alkaline earth metals are preferred. The crystal form of zeolite is not particularly limited, and examples thereof include A type, X type, and LSX type. The alkali metal or alkaline earth metal in the zeolite is not particularly limited, and examples thereof include potassium, sodium, calcium and lithium.
ゼオライト触媒は、フッ素化することにより、より強い活性を示すようになるため、反応に用いる前に、予めゼオライト触媒をフッ素化してフッ素化ゼオライト触媒として用いることができる。 Since the zeolite catalyst exhibits stronger activity by fluorination, the zeolite catalyst can be fluorinated in advance and used as a fluorinated zeolite catalyst before being used in the reaction.
ゼオライト触媒をフッ素化するためのフッ素化剤としては、例えば、F2、HF等の無機フッ素化剤、ヘキサフルオロプロペン等のフルオロカーボン系の有機フッ素化剤等を用いることができる。 The fluorinating agent for fluorination of zeolite catalysts, for example, can be used F 2, inorganic fluorinating agents such as HF, fluorocarbon-based organic fluorinating agent such as hexafluoropropene, and the like.
ゼオライト触媒をフッ素化する方法としては、例えば、室温(25℃)〜400℃程度の温度条件下に大気圧下で上記したフッ素化剤を流通させてフッ素化する方法を挙げることができる。 Examples of the method for fluorinating the zeolite catalyst include a method in which the above-mentioned fluorinating agent is circulated under atmospheric pressure under a temperature condition of about room temperature (25 ° C.) to 400 ° C. to fluorinate.
上記した触媒は、単独で用いることもでき、2種以上を組合せて用いることもできる。これらのなかでも、転化率、選択率及び収率の観点から、フッ素化若しくは非フッ素化活性炭触媒、フッ素化若しくは非フッ素化酸化クロム触媒、フッ素化若しくは非フッ素化アルミナ触媒等が好ましく、フッ素化若しくは非フッ素化活性炭触媒、フッ素化若しくは非フッ素化酸化クロム触媒等がより好ましい。 The above-mentioned catalysts can be used alone or in combination of two or more. Among these, from the viewpoint of conversion rate, selectivity and yield, fluorinated or non-fluorinated activated carbon catalyst, fluorinated or non-fluorinated chromium oxide catalyst, fluorinated or non-fluorinated alumina catalyst and the like are preferable, and fluorinated. Alternatively, a non-fluorinated activated carbon catalyst, a fluorinated or non-fluorinated chromium oxide catalyst, or the like is more preferable.
また、触媒として上記したフッ素化若しくは非フッ素化ルイス酸触媒を使用する場合は、担体に担持させることも可能である。このような担体としては、例えば、炭素、アルミナ(Al2O3)、ジルコニア(ZrO2)、シリカ(SiO2)、チタニア(TiO2)等が挙げられる。炭素としては、活性炭、不定形炭素、グラファイト、ダイヤモンド等を用いることができる。 Further, when the above-mentioned fluorinated or non-fluorinated Lewis acid catalyst is used as the catalyst, it can be supported on a carrier. Examples of such a carrier include carbon, alumina (Al 2 O 3 ), zirconia (ZrO 2 ), silica (SiO 2 ), titania (TiO 2 ) and the like. As the carbon, activated carbon, amorphous carbon, graphite, diamond and the like can be used.
本開示の製造方法において、触媒の存在下にハロゲン化ブチン化合物とハロゲン化水素とを反応させるに当たっては、例えば、触媒を固体の状態(固相)でハロゲン化ブチン化合物と接触させることが好ましい。この場合、触媒の形状は粉末状とすることもできるが、ペレット状のほうが気相連続流通式の反応に採用する場合には好ましい。 In the production method of the present disclosure, when reacting a halogenated butine compound with hydrogen halide in the presence of a catalyst, for example, it is preferable to bring the catalyst into contact with the halogenated butine compound in a solid state (solid phase). In this case, the shape of the catalyst may be powder, but the pellet shape is preferable when it is used for the gas phase continuous flow type reaction.
触媒のBET法により測定した比表面積(以下、「BET比表面積」と言うこともある。)は、通常10〜3,000m2/gが好ましく、10〜2500m2/gがより好ましく、20〜2000m2/gがさらに好ましく、30〜1500m2/gが特に好ましい。触媒のBET比表面積がこのような範囲にある場合、触媒の粒子の密度が小さ過ぎることがないため、より高い選択率でハロゲン化ブテン化合物を得ることができる。また、ハロゲン化ブチン化合物の転化率をより向上させることも可能である。 Measured specific surface area by the BET method of the catalyst (hereinafter, sometimes referred to as "BET specific surface area".) Is preferably normally 10~3,000m 2 / g, more preferably 10~2500m 2 / g, 20~2000m 2 / g is more preferred, and 30-1500 m 2 / g is particularly preferred. When the BET specific surface area of the catalyst is in such a range, the density of the catalyst particles is not too small, so that the halogenated butene compound can be obtained with a higher selectivity. It is also possible to further improve the conversion rate of the halogenated butin compound.
本開示におけるハロゲン化ブチン化合物とハロゲン化水素とを反応させる工程では、反応温度の下限値は、より効率的にハロゲン化水素による付加反応を進行させて転化率をより向上させ、目的化合物であるハロゲン化ブテン化合物をより高い選択率で得ることができる観点から、通常180℃以上が好ましく、200℃以上がより好ましい。なお、触媒としてルイス酸触媒を使用する場合は、反応温度の下限値は、同様の理由により、280℃以上が好ましく、320℃以上がより好ましい。 In the step of reacting the halogenated butine compound with hydrogen halide in the present disclosure, the lower limit of the reaction temperature is the target compound by more efficiently advancing the addition reaction with hydrogen halide to further improve the conversion rate. From the viewpoint that the halogenated butene compound can be obtained with a higher selectivity, 180 ° C. or higher is usually preferable, and 200 ° C. or higher is more preferable. When a Lewis acid catalyst is used as the catalyst, the lower limit of the reaction temperature is preferably 280 ° C. or higher, more preferably 320 ° C. or higher for the same reason.
本開示におけるハロゲン化ブチン化合物とハロゲン化水素とを反応させる反応温度の上限値は、より効率的にハロゲン化水素による付加反応を進行させて転化率をより向上させ、目的化合物であるハロゲン化ブテン化合物をより高い選択率で得ることができる観点、且つ反応生成物が分解又は重合することによる選択率の低下をより抑制する観点から、通常500℃以下が好ましく、450℃以下がより好ましく、400℃以下がさらに好ましい。 The upper limit of the reaction temperature at which the halogenated butine compound and hydrogen halide are reacted in the present disclosure is such that the addition reaction with hydrogen halide proceeds more efficiently to further improve the conversion rate, and the halogenated butene which is the target compound. From the viewpoint of obtaining a compound with a higher selectivity and further suppressing a decrease in selectivity due to decomposition or polymerization of the reaction product, usually 500 ° C. or lower is preferable, 450 ° C. or lower is more preferable, and 400 ° C. The temperature is more preferably ° C. or lower.
本開示におけるハロゲン化ブチン化合物とハロゲン化水素とを反応させる反応時間は、例えば気相流通式を採用する場合には、原料化合物の触媒に対する接触時間(W/F)[W:金属触媒の重量(g)、F:原料化合物の流量(cc/sec)]は、反応の転化率が特に高く、ハロゲン化ブテン化合物をより高収率及び高選択率に得ることができる観点から、1.5〜30g・sec./ccが好ましく、1.8〜20g・sec./ccがより好ましく、2.0〜10g・sec./ccがさらに好ましい。上記のW/Fは特に気相流通式反応を採用した場合の反応時間を特定したものであるが、バッチ式反応を採用する場合も、接触時間を適宜設定することができる。なお、上記接触時間とは、基質及び触媒が接触する時間を意味する。 The reaction time for reacting the halogenated butine compound with hydrogen halide in the present disclosure is, for example, the contact time (W / F) of the raw material compound with the catalyst (W / F) [W: weight of the metal catalyst] when the vapor phase flow method is adopted. (G), F: Flow rate of raw material compound (cc / sec)] is 1.5 to 30 g from the viewpoint that the conversion rate of the reaction is particularly high and the halogenated butene compound can be obtained in a higher yield and higher selectivity. -Sec./cc is preferable, 1.8 to 20 g-sec./cc is more preferable, and 2.0 to 10 g-sec./cc is further preferable. The above W / F specifies the reaction time especially when the gas phase flow type reaction is adopted, but the contact time can be appropriately set even when the batch type reaction is adopted. The contact time means the time during which the substrate and the catalyst are in contact with each other.
本開示におけるハロゲン化ブチン化合物とハロゲン化水素とを反応させる反応圧力は、より効率的にハロゲン化水素による付加反応を進行させる点から、-0.05MPa〜2MPaが好ましく、-0.01MPa〜1MPaがより好ましく、常圧〜0.5MPaがさらに好ましい。なお、本開示において、圧力については特に表記が無い場合はゲージ圧とする。 The reaction pressure for reacting the hydrogen halide compound with hydrogen halide in the present disclosure is preferably -0.05MPa to 2MPa, more preferably -0.01MPa to 1MPa, from the viewpoint of more efficiently advancing the addition reaction with hydrogen halide. It is preferably normal pressure to 0.5 MPa, more preferably. In this disclosure, the pressure is a gauge pressure unless otherwise specified.
本開示におけるハロゲン化ブチン化合物とハロゲン化水素との反応において、ハロゲン化ブチン化合物と触媒とを投入して反応させる反応器としては、上記温度及び圧力に耐え得るものであれば、形状及び構造は特に限定されない。反応器としては、例えば、縦型反応器、横型反応器、多管型反応器等が挙げられる。反応器の材質としては、例えば、ガラス、ステンレス、鉄、ニッケル、鉄ニッケル合金等が挙げられる。 In the reaction between the halogenated butine compound and hydrogen halide in the present disclosure, the shape and structure of the reactor in which the halogenated butine compound and the catalyst are charged and reacted are as long as they can withstand the above temperature and pressure. There is no particular limitation. Examples of the reactor include a vertical reactor, a horizontal reactor, a multi-tube reactor and the like. Examples of the material of the reactor include glass, stainless steel, iron, nickel, iron-nickel alloy and the like.
本開示におけるハロゲン化ブチン化合物とハロゲン化水素との反応(ハロゲン化水素による付加反応)は、反応器に基質を連続的に仕込み、当該反応器から目的化合物を連続的に抜き出す流通式及びバッチ式のいずれの方式によっても実施することができる。目的化合物が反応器に留まると、さらに脱離反応が進行し得ることから、流通式で実施することが好ましい。本開示におけるハロゲン化ブチン化合物とハロゲン化水素とを反応させる工程では、気相で行い、特に固定床反応器を用いた気相連続流通式で行うことが好ましい。気相連続流通式で行う場合は、装置、操作等を簡略化できるとともに、経済的に有利である。 The reaction between a hydrogen halide compound and hydrogen halide in the present disclosure is a distribution type or a batch type in which a substrate is continuously charged into a reactor and a target compound is continuously extracted from the reactor. It can be carried out by any of the above methods. When the target compound stays in the reactor, the elimination reaction can proceed further, so it is preferable to carry out by a distribution method. The step of reacting the halogenated butine compound with hydrogen halide in the present disclosure is preferably carried out in the gas phase, and particularly preferably in the gas phase continuous flow method using a fixed bed reactor. When the gas phase continuous flow system is used, the equipment, operation, etc. can be simplified and it is economically advantageous.
本開示におけるハロゲン化ブチン化合物とハロゲン化水素との反応を行う際の雰囲気については、触媒の劣化を抑制する点から、不活性ガス雰囲気下、フッ化水素ガス雰囲気下等が好ましい。当該不活性ガスは、窒素、ヘリウム、アルゴン等が挙げられる。これらの不活性ガスのなかでも、コストを抑える観点から、窒素が好ましい。当該不活性ガスの濃度は、反応器に導入される気体成分の0〜50モル%とすることが好ましい。 Regarding the atmosphere when the reaction between the halogenated butine compound and hydrogen halide in the present disclosure is carried out, it is preferable to use an inert gas atmosphere, a hydrogen fluoride gas atmosphere, or the like from the viewpoint of suppressing deterioration of the catalyst. Examples of the inert gas include nitrogen, helium, argon and the like. Among these inert gases, nitrogen is preferable from the viewpoint of cost reduction. The concentration of the inert gas is preferably 0 to 50 mol% of the gas component introduced into the reactor.
このようにして得られる本開示の目的化合物は、一般式(1):
CX1X2X3CX4=CHCX7X8X9 (1)
[式中、X1、X2、X3、X4、X7、X8及びX9は同一又は異なって、ハロゲン原子を示す。]
で表されるハロゲン化ブテン化合物である。
The target compound of the present disclosure thus obtained is the general formula (1) :.
CX 1 X 2 X 3 CX 4 = CHCX 7 X 8 X 9 (1)
[In the equation, X 1 , X 2 , X 3 , X 4 , X 7 , X 8 and X 9 indicate the same or different halogen atoms. ]
It is a halogenated butene compound represented by.
一般式(1)におけるX1、X2、X3、X7、X8及びX9は、上記した一般式(2)におけるX1、X2、X3、X7、X8及びX9と対応している。また、一般式(1)において、X4で示されるハロゲン原子としては、フッ素原子、塩素原子、臭素原子及びヨウ素原子が挙げられる。このため、製造しようとする一般式(1)で表されるハロゲン化ブテン化合物は、例えば、具体的には、CF3CF=CHCF3、CCl3CCl=CHCCl3、CBr3CBr=CHCBr3等が挙げられる。 X 1, X 2, X 3 in the general formula (1), X 7, X 8 and X 9 is, X 1 in the general formula (2), X 2, X 3, X 7, X 8 and X 9 It corresponds to. Further, in the general formula (1), examples of the halogen atom represented by X 4 include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom. Therefore, the halogenated butene compound represented by the general formula (1) to be produced is, for example, specifically CF 3 CF = CHCF 3 , CCl 3 CCl = CHCCl 3 , CBr 3 CBr = CHCBr 3, etc. Can be mentioned.
ハロゲン化ブチン化合物とハロゲン化水素との反応(ハロゲン化水素による付加反応)終了後は、必要に応じ、常法にしたがって精製処理を行い、目的化合物であるハロゲン化ブテン化合物を得ることができる。なお、本開示の製造方法によれば、上記のとおり、ハロゲン化ブチン化合物1モルに対して2モルのハロゲン化水素が付加することは抑制され、ハロゲン化ブチン化合物1モルに対して1モルのハロゲン化水素が付加したハロゲン化ブテン化合物を選択的に得ることができる。 After completion of the reaction between the halogenated butine compound and hydrogen halide (addition reaction with hydrogen halide), if necessary, purification treatment is carried out according to a conventional method to obtain a halogenated butene compound which is a target compound. According to the production method of the present disclosure, as described above, the addition of 2 mol of hydrogen halide to 1 mol of the halogenated butine compound is suppressed, and 1 mol to 1 mol of the halogenated butine compound is suppressed. A halogenated butene compound to which hydrogen halide is added can be selectively obtained.
このようにして得られたハロゲン化ブテン化合物は、半導体、液晶等の最先端の微細構造を形成するためのエッチングガス等の各種用途に有効利用できる。 The halogenated butene compound thus obtained can be effectively used in various applications such as an etching gas for forming a state-of-the-art fine structure of a semiconductor, a liquid crystal, or the like.
2.ハロゲン化ブテン組成物
以上のようにして、ハロゲン化ブテン化合物を得ることができるが、ハロゲン化ブチン化合物1モルに対して1モルのハロゲン化水素が付加したハロゲン化ブテン化合物と、ハロゲン化ブチン化合物1モルに対して2モルのハロゲン化水素が付加したハロゲン化ブタン化合物とを含有する、ハロゲン化ブテン組成物の形で得られることもある。
2. 2. Halogenated Butene Composition The halogenated butene compound can be obtained as described above, but the halogenated butene compound in which 1 mol of hydrogen halide is added to 1 mol of the halogenated butine compound and the halogenated butene compound It may also be obtained in the form of a halogenated butene composition containing 2 mol of hydrogen halide added to 1 mol of the butane halide compound.
この本開示のハロゲン化ブテン組成物において、ハロゲン化ブテン化合物は上記した一般式(1)で表されるハロゲン化ブテン化合物、ハロゲン化ブタン化合物は上記した一般式(3)で表されるハロゲン化ブタン化合物である。 In the halogenated butene composition of the present disclosure, the halogenated butene compound is a halogenated butene compound represented by the above general formula (1), and the halogenated butene compound is a halogenated product represented by the above general formula (3). It is a butene compound.
一般式(1)及び(3)において、X1、X2、X3、X4、X5、X6、X7、X8及びX9で示されるハロゲン原子としては、フッ素原子、塩素原子、臭素原子及びヨウ素原子が挙げられ、フッ素原子が好ましい。 In the general formulas (1) and (3), the halogen atoms represented by X 1 , X 2 , X 3 , X 4 , X 5 , X 6 , X 7 , X 8 and X 9 are fluorine atom and chlorine atom. , Bromine atom and iodine atom, and fluorine atom is preferable.
この本開示のハロゲン化ブテン組成物の総量を100モル%として、一般式(1)で表されるハロゲン化ブテン化合物の含有量は91.00〜99.99モル%が好ましく、92.00〜99.98モル%がより好ましい。また、一般式(3)で表されるハロゲン化ブタン化合物の含有量は0.01〜9.00モル%が好ましく、0.02〜8.00モル%がより好ましい。 Assuming that the total amount of the halogenated butene composition of the present disclosure is 100 mol%, the content of the halogenated butene compound represented by the general formula (1) is preferably 91.00 to 99.99 mol%, more preferably 92.00 to 99.98 mol%. .. The content of the halogenated butane compound represented by the general formula (3) is preferably 0.01 to 9.00 mol%, more preferably 0.02 to 8.00 mol%.
なお、本開示の製造方法によれば、ハロゲン化ブテン組成物として得られた場合であっても、上記のように一般式(1)で表されるハロゲン化ブテン化合物を、反応の転化率を高く、また、高収率且つ高選択率で得ることができるため、ハロゲン化ブテン組成物中の一般式(1)で表されるハロゲン化ブテン化合物以外の成分を少なくすることが可能であるため、一般式(1)で表されるハロゲン化ブテン化合物を得るための精製の労力を削減することができる。 According to the production method of the present disclosure, even when it is obtained as a halogenated butene composition, the halogenated butene compound represented by the general formula (1) as described above can be used for the conversion rate of the reaction. Since it can be obtained with high yield and high selectivity, it is possible to reduce the components other than the halogenated butene compound represented by the general formula (1) in the halogenated butene composition. , The purification effort for obtaining the halogenated butene compound represented by the general formula (1) can be reduced.
このような本開示のハロゲン化ブテン組成物は、半導体、液晶等の最先端の微細構造を形成するためのエッチングガスの他、有機合成用ビルディングブロック等の各種用途に有効利用できる。なお、有機合成用ビルディングブロックとは、反応性が高い骨格を有する化合物の前駆体となり得る物質を意味する。例えば、本開示のハロゲン化ブテン組成物とCF3Si(CH3)3等の含フッ素有機ケイ素化合物とを反応させると、CF3基等のフルオロアルキル基を導入して洗浄剤や含フッ素医薬中間体となり得る物質に変換することが可能である。 Such a halogenated butene composition of the present disclosure can be effectively used in various applications such as building blocks for organic synthesis, as well as etching gas for forming the most advanced fine structure of semiconductors, liquid crystals and the like. The building block for organic synthesis means a substance that can be a precursor of a compound having a highly reactive skeleton. For example, when the halogenated butene composition of the present disclosure is reacted with a fluorine-containing organosilicon compound such as CF 3 Si (CH 3 ) 3, a fluoroalkyl group such as CF 3 group is introduced to introduce a cleaning agent or a fluorine-containing pharmaceutical. It can be converted into a substance that can be an intermediate.
以上、本開示の実施形態を説明したが、特許請求の範囲の趣旨及び範囲から逸脱することなく、形態や詳細の多様な変更が可能である。 Although the embodiments of the present disclosure have been described above, various modifications of the forms and details are possible without departing from the spirit and scope of the claims.
以下に実施例を示し、本開示の特徴を明確にする。本開示はこれら実施例に限定されるものではない。 Examples are shown below to clarify the features of the present disclosure. The present disclosure is not limited to these examples.
実施例1〜6及び比較例1〜2のハロゲン化ブテン化合物の製造方法では、原料化合物は、一般式(2)で表されるハロゲン化ブチン化合物において、X1、X2、X3、X7、X8及びX9はフッ素原子とし、ハロゲン化水素はフッ化水素とし、以下の反応式:
CF3C≡CCF3 + HF → CF3CF=CHCF3
に従って、フッ化水素付加反応により、ハロゲン化ブテン化合物を得た。
In the method for producing a halogenated butene compound of Examples 1 to 6 and Comparative Examples 1 and 2, the starting compound is X 1 , X 2 , X 3 , X in the halogenated butine compound represented by the general formula (2). 7 , X 8 and X 9 are fluorine atoms, hydrogen halide is hydrogen fluoride, and the following reaction formula:
CF 3 C≡CCF 3 + HF → CF 3 CF = CHCF 3
Therefore, a halogenated butene compound was obtained by a hydrogen fluoride addition reaction.
実施例1〜4:活性炭触媒を用いたフッ化水素付加反応
反応管であるSUS配管(外径:1/2インチ)に、触媒として活性炭触媒(大阪ガスケミカル(株)製;比表面積1200m2/g)を10g加えた。窒素雰囲気下、200℃で2時間乾燥した後、圧力を常圧、CF3C≡CCF3(基質)及びフッ化水素と活性炭触媒との接触時間(W/F)が2g・sec/ccとなるように、反応管にCF3C≡CCF3(基質)及びフッ化水素ガスを流通させた。
Examples 1 to 4: Activated carbon catalyst (manufactured by Osaka Gas Chemical Co., Ltd .; specific surface area 1200 m 2 ) as a catalyst in SUS piping (outer diameter: 1/2 inch) which is a hydrogen fluoride addition reaction reaction tube using an activated carbon catalyst. / g) was added by 10 g. After drying at 200 ° C for 2 hours in a nitrogen atmosphere, the pressure was normal pressure, and the contact time (W / F) between CF 3 C ≡ CCF 3 (substrate) and hydrogen fluoride and the activated carbon catalyst was 2 g · sec / cc. CF 3 C ≡ C CF 3 (substrate) and hydrogen fluoride gas were circulated in the reaction tube so as to be.
反応は、気相連続流通式で進行させた。 The reaction proceeded in a gas phase continuous flow system.
反応管を200℃、250℃、300℃又は400℃で加熱してフッ化水素付加反応を開始した。 The reaction tube was heated at 200 ° C., 250 ° C., 300 ° C. or 400 ° C. to initiate the hydrogen fluoride addition reaction.
CF3C≡CCF3(基質)と接触させるフッ化水素ガスのモル比(HF/CF3C≡CCF3比)を150とし、接触時間(W/F)が2g・sec/ccとなるように基質とフッ化水素ガスの流量を調整し、反応開始1時間後に除害塔を通った留出分を集めた。 CF 3 C≡CCF 3 (substrate) hydrogen fluoride gas is contacted with a molar ratio of the (HF / CF 3 C≡CCF 3 ratio) was set to 150, the contact time (W / F) so as to become 2 g · sec / cc The flow rates of the substrate and hydrogen fluoride gas were adjusted to collect the distillate that passed through the abatement tower 1 hour after the start of the reaction.
その後、ガスクロマトグラフィー((株)島津製作所製、商品名「GC-2014」)を用いてガスクロマトグラフィー/質量分析法(GC/MS)により質量分析を行い、NMR(JEOL社製、商品名「400YH」)を用いてNMRスペクトルによる構造解析を行った。 After that, mass spectrometry was performed by gas chromatography / mass spectrometry (GC / MS) using gas chromatography (manufactured by Shimadzu Corporation, trade name "GC-2014"), and NMR (manufactured by JEOL Ltd., trade name). Structural analysis by NMR spectrum was performed using "400YH").
質量分析及び構造解析の結果から、目的化合物としてCF3CF=CHCF3が生成したことが確認された。実施例1では、CF3C≡CCF3(基質)からの転化率は99.75モル%、CF3CF=CHCF3(目的化合物)の選択率は99.85モル%、CF3CF2CH2CF3の選択率は0.11モル%、CF3CFHCFHCF3の選択率は0.01モル%であった。実施例2では、CF3C≡CCF3(基質)からの転化率は100.00モル%、CF3CF=CHCF3(目的化合物)の選択率は99.36モル%、CF3CF2CH2CF3の選択率は0.34モル%、CF3CFHCFHCF3の選択率は0.26モル%であった。実施例3では、CF3C≡CCF3(基質)からの転化率は100.00モル%、CF3CF=CHCF3(目的化合物)の選択率は98.45モル%、CF3CF2CH2CF3の選択率は0.98モル%、CF3CFHCFHCF3の選択率は0.10モル%であった。実施例4では、CF3C≡CCF3(基質)からの転化率は100.00モル%、CF3CF=CHCF3(目的化合物)の選択率は99.15モル%、CF3CF2CH2CF3の選択率は0.80モル%、CF3CFHCFHCF3の選択率は0.02モル%であった。 From the results of mass spectrometry and structural analysis, it was confirmed that CF 3 CF = CHCF 3 was produced as the target compound. In Example 1, the conversion rate from CF 3 C ≡ CCF 3 (substrate) was 99.75 mol%, the selectivity of CF 3 CF = CHCF 3 (target compound) was 99.85 mol%, and CF 3 CF 2 CH 2 CF 3 The selectivity was 0.11 mol%, and the selectivity of CF 3 CFHCFHCF 3 was 0.01 mol%. In Example 2, CF 3 C≡CCF 3 conversion of (substrate) is 100.00 mol%, CF 3 CF = CHCF 3 ( object compound) of selectivity of 99.36 mol%, of CF 3 CF 2 CH 2 CF 3 The selectivity was 0.34 mol%, and the selectivity of CF 3 CFHCFHCF 3 was 0.26 mol%. In Example 3, CF 3 C≡CCF 3 conversion of (substrate) is 100.00 mol%, CF 3 CF = CHCF 3 ( object compound) of selectivity of 98.45 mol%, of CF 3 CF 2 CH 2 CF 3 The selectivity was 0.98 mol%, and the selectivity of CF 3 CFHCFHCF 3 was 0.10 mol%. In Example 4, CF 3 C≡CCF 3 conversion of (substrate) is 100.00 mol%, CF 3 CF = CHCF 3 ( object compound) of selectivity of 99.15 mol%, of CF 3 CF 2 CH 2 CF 3 The selectivity was 0.80 mol%, and the selectivity of CF 3 CFHCFHCF 3 was 0.02 mol%.
実施例5〜6:酸化クロム触媒を用いたフッ化水素付加反応
触媒として酸化クロム触媒(Cr2O3)を用い、反応温度を350℃、CF3C≡CCF3(基質)とフッ化水素ガスの酸化クロム触媒との接触時間(W/F)が4g・sec/cc又は5g・sec/ccとなるように、CF3C≡CCF3(基質)とフッ化水素ガスの合計流量を調整しCF3C≡CCF3(基質)と接触させるフッ化水素ガスのモル比(HF/CF3C≡CCF3比)が50又は200としたこと以外は実施例1〜4と同様に反応を進行させた。
Examples 5 to 6: Hydrogen fluoride addition using a chromium oxide catalyst A hydrogen fluoride catalyst (Cr 2 O 3 ) is used as a reaction catalyst, the reaction temperature is 350 ° C., CF 3 C ≡ CCF 3 (substrate) and hydrogen fluoride. Adjust the total flow rate of CF 3 C ≡ CCF 3 (substrate) and hydrogen fluoride gas so that the contact time (W / F) of the gas with the chromium oxide catalyst is 4 g · sec / cc or 5 g · sec / cc. the same reaction as and CF 3 C≡CCF 3 except that the molar ratio of hydrogen fluoride gas is contacted with (a substrate) (HF / CF 3 C≡CCF 3 ratio) was 50 or 200 examples 1-4 I made it progress.
質量分析及び構造解析の結果から、目的化合物としてCF3CF=CHCF3が生成したことが確認された。実施例5では、CF3C≡CCF3(基質)からの転化率は97.59モル%、CF3CF=CHCF3(目的化合物)の選択率は99.98モル%、CF3CF2CH2CF3の選択率は0.01モル%、CF3CFHCFHCF3の選択率は0.00モル%であった。実施例6では、CF3C≡CCF3(基質)からの転化率は80.90モル%、CF3CF=CHCF3(目的化合物)の選択率は99.96モル%、CF3CF2CH2CF3の選択率は0.03モル%、CF3CFHCFHCF3の選択率は0.00モル%であった。 From the results of mass spectrometry and structural analysis, it was confirmed that CF 3 CF = CHCF 3 was produced as the target compound. In Example 5, the conversion rate from CF 3 C ≡ CCF 3 (substrate) was 97.59 mol%, the selectivity of CF 3 CF = CHCF 3 (target compound) was 99.98 mol%, and CF 3 CF 2 CH 2 CF 3 The selectivity was 0.01 mol%, and the selectivity of CF 3 CFHCFHCF 3 was 0.00 mol%. In Example 6, the conversion rate from CF 3 C ≡ CCF 3 (substrate) was 80.90 mol%, the selectivity of CF 3 CF = CHCF 3 (target compound) was 99.96 mol%, and CF 3 CF 2 CH 2 CF 3 The selectivity was 0.03 mol%, and the selectivity of CF 3 CFHCFHCF 3 was 0.00 mol%.
比較例1〜2:触媒を用いないフッ化水素付加反応
触媒を使用せず、反応温度を200℃又は350℃、CF3C≡CCF3(基質)とフッ化水素ガスの触媒との接触時間(W/F)を20g・sec/ccとし、CF3C≡CCF3(基質)と接触させるフッ化水素ガスのモル比(HF/CF3C≡CCF3比)を200としたこと以外は実施例1〜4と同様に反応を進行させた。なお、比較例1〜2において、W/Fが20g・sec/ccとしたこととは、触媒を使用する実施例1〜6においてW/Fが20g・sec/ccとする場合と同じ流量でCF3C≡CCF3(基質)を流したことを意味する。
Comparative Examples 1-2: Without using a catalyst-free hydrogen fluoride addition reaction catalyst, the reaction temperature was 200 ° C or 350 ° C, and the contact time between CF 3 C ≡ CCF 3 (substrate) and the hydrogen fluoride gas catalyst. Except that (W / F) was set to 20 g · sec / cc and the molar ratio of hydrogen fluoride gas (HF / CF 3 C ≡ CCF 3 ratio) to be brought into contact with CF 3 C ≡ CCF 3 (substrate) was set to 200. The reaction proceeded in the same manner as in Examples 1 to 4. In addition, in Comparative Examples 1 and 2, the fact that the W / F was set to 20 g · sec / cc means that the flow rate was the same as the case where the W / F was set to 20 g · sec / cc in Examples 1 to 6 using the catalyst. CF 3 C ≡ It means that CCF 3 (substrate) was flowed.
質量分析及び構造解析の結果から、目的化合物としてCF3CF=CHCF3が生成したことが確認された。比較例1では、CF3C≡CCF3(基質)の流量を実施例1〜6と比較して著しく多くしているにも関わらず、CF3C≡CCF3(基質)からの転化率は1.92モル%、CF3CF=CHCF3(目的化合物)の選択率は90.83モル%、CF3CF2CH2CF3の選択率は8.27モル%、CF3CFHCFHCF3の選択率は0.82モル%であった。比較例2では、CF3C≡CCF3(基質)の流量を実施例1〜6と比較して著しく多くしているにも関わらず、CF3C≡CCF3(基質)からの転化率は2.17モル%、CF3CF=CHCF3(目的化合物)の選択率は85.52モル%、CF3CF2CH2CF3の選択率は7.83モル%、CF3CFHCFHCF3の選択率は0.62モル%であった。このため、CF3C≡CCF3(基質)からの転化率が著しく低く、また、不純物であるCF3CF2CH2CF3が相当程度生成されており、目的化合物であるCF3CF=CHCF3の選択率も低かった。 From the results of mass spectrometry and structural analysis, it was confirmed that CF 3 CF = CHCF 3 was produced as the target compound. In Comparative Example 1, the conversion rate from CF 3 C ≡ CCF 3 (substrate) was significantly higher than that of Examples 1 to 6 even though the flow rate of CF 3 C ≡ CCF 3 (substrate) was significantly increased. 1.92 mol%, CF 3 CF = CHCF 3 (target compound) selectivity is 90.83 mol%, CF 3 CF 2 CH 2 CF 3 selectivity is 8.27 mol%, CF 3 CFHCFHCF 3 selectivity is 0.82 mol%. there were. In Comparative Example 2, the conversion rate from CF 3 C ≡ CCF 3 (substrate) was significantly higher than that of Examples 1 to 6 even though the flow rate of CF 3 C ≡ CCF 3 (substrate) was significantly increased. 2.17 mol%, CF 3 CF = CHCF 3 (target compound) selectivity is 85.52 mol%, CF 3 CF 2 CH 2 CF 3 selectivity is 7.83 mol%, CF 3 CFHCFHCF 3 selectivity is 0.62 mol%. there were. Therefore, CF 3 C≡CCF 3 (substrate) conversion rate significantly lower from, also, CF 3 CF 2 CH 2 CF 3 as an impurity are considerably generated, the target compound CF 3 CF = CHCF The selectivity of 3 was also low.
結果を表1に示す。 The results are shown in Table 1.
Claims (5)
CX1X2X3CX4=CHCX7X8X9 (1)
[式中、X1、X2、X3、X4、X7、X8及びX9はフッ素原子を示す。]
で表されるハロゲン化ブテン化合物の製造方法であって、
フッ素化若しくは非フッ素化活性炭触媒、並びにフッ素化若しくは非フッ素化酸化クロム触媒よりなる群から選ばれる少なくとも1種の触媒の存在下に、
一般式(2):
CX1X2X3C≡CCX7X8X9 (2)
[式中、X1、X2、X3、X7、X8及びX9は前記に同じである。]
で表されるハロゲン化ブチン化合物と、ハロゲン化水素とを反応させる工程
を備える、製造方法。 General formula (1):
CX 1 X 2 X 3 CX 4 = CHCX 7 X 8 X 9 (1)
[In the equation, X 1 , X 2 , X 3 , X 4 , X 7 , X 8 and X 9 represent fluorine atoms . ]
It is a method for producing a halogenated butene compound represented by.
In the presence of at least one catalyst selected from the group consisting of fluorinated or non-fluorinated activated carbon catalysts and fluorinated or non-fluorinated chromium oxide catalysts.
General formula (2):
CX 1 X 2 X 3 C ≡ CCX 7 X 8 X 9 (2)
[In the equation, X 1 , X 2 , X 3 , X 7 , X 8 and X 9 are the same as above. ]
A production method comprising a step of reacting a halogenated butin compound represented by (1) with hydrogen halide.
CX1X2X3CX4=CHCX7X8X9 (1)
[式中、X1、X2、X3、X4、X7、X8及びX9 はフッ素原子を示す。]
で表されるハロゲン化ブテン化合物と、
一般式(3):
CX1X2X3CX4X5CHX6CX7X8X9 (3)
[式中、X1、X2、X3、X4、X7、X8及びX9は前記に同じである、X5及びX6は片方が水素原子を示し、他方がフッ素原子を示す。]
で表されるハロゲン化ブタン化合物とを含有する組成物であって、
組成物全量を100モル%として、前記一般式(1)で表されるハロゲン化ブテン化合物の含有量が91.00〜99.99モル%であり、前記一般式(3)で表されるハロゲン化ブタン化合物の含有量が0.01〜9.00モル%である、組成物。 General formula (1):
CX 1 X 2 X 3 CX 4 = CHCX 7 X 8 X 9 (1)
Wherein, X 1, X 2, X 3, X 4, X 7, X 8 and X 9 represents a full Tsu atom. ]
Halogenated butene compound represented by
General formula (3):
CX 1 X 2 X 3 CX 4 X 5 CHX 6 CX 7 X 8 X 9 (3)
[In the equation, X 1 , X 2 , X 3 , X 4 , X 7 , X 8 and X 9 are the same as above, X 5 and X 6 indicate a hydrogen atom on one side and a fluorine atom on the other side. .. ]
A composition containing a halogenated butane compound represented by.
The content of the halogenated butene compound represented by the general formula (1) is 91.00 to 99.99 mol% , assuming that the total amount of the composition is 100 mol% , and the halogenated butane compound represented by the general formula (3). A composition having a content of 0.01-9.00 mol% .
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