JP6813813B2 - Glass plate - Google Patents

Description

The present invention relates to a glass plate and a method for manufacturing the same, and more specifically, to a glass plate used for supporting a processed substrate in a manufacturing process of a semiconductor package and a method for manufacturing the same.

Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space for semiconductor chips used in these electronic devices is also severely limited, and high-density mounting of semiconductor chips has become an issue. Therefore, in recent years, a three-dimensional mounting technology, that is, a high-density mounting of a semiconductor package has been achieved by laminating semiconductor chips and connecting each semiconductor chip with wiring.

Further, a conventional wafer level package (WLP) is manufactured by forming bumps in a wafer state and then individualizing them by dicing. However, the conventional WLP has a problem that it is difficult to increase the number of pins and the semiconductor chip is easily chipped because the back surface of the semiconductor chip is exposed.

Therefore, as a new WLP, a fan-out type WLP has been proposed. The fan-out type WLP can increase the number of pins, and by protecting the end portion of the semiconductor chip, it is possible to prevent the semiconductor chip from being chipped or the like.

The fan-out type WLP includes a step of molding a plurality of semiconductor chips with a resin encapsulant to form a processed substrate, and then wiring to one surface of the processed substrate, a step of forming solder bumps, and the like.

Since these steps involve a heat treatment at about 200 to 300 ° C., the sealing material may be deformed and the size of the processed substrate may change. When the size of the processed substrate changes, it becomes difficult to wire the processed substrate at a high density to one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.

It is effective to use a glass plate as a support plate in order to suppress a change in the dimensions of the processed substrate. The glass plate has a surface that is easy to smooth and has rigidity. Therefore, if a glass plate is used, the processed substrate can be firmly and accurately supported. Further, the glass plate easily transmits light such as ultraviolet light. Therefore, when a glass plate is used, the processed substrate and the glass plate can be easily fixed by providing an adhesive layer or the like. Further, the processed substrate and the glass plate can be easily separated by providing a release layer or the like.

However, even when a glass plate is used, it may be difficult to wire at a high density to one surface of the processed substrate.

Further, the glass plate for supporting the processed substrate is required to be hard to be damaged at the time of loading / unloading, transporting or processing. The mechanical strength of the glass plate depends on the ratio of chipping, microcracks, etc. on the end face, and depending on this ratio, the mechanical strength of the glass plate is significantly reduced. If a chamfered portion is formed on the end face of the glass plate by polishing, chipping and the like can be reduced, but it is difficult to completely remove the microcracks. As a result, the end face strength of the glass plate cannot be sufficiently increased, and the glass plate is easily damaged during loading / unloading, transportation, or processing.

The present invention has been made in view of the above circumstances, and its technical problem is to create a glass plate suitable for supporting a processed substrate used for high-density wiring and having high end face strength, and a method for manufacturing the same. This contributes to increasing the density of the semiconductor package.

As a result of repeating various experiments, the present inventors have found that the above technical problems can be solved by reducing the overall plate thickness deviation and further using the end face of the glass plate as a melt-solidified surface. As a proposal. That is, the glass plate of the present invention is characterized in that the total plate thickness deviation is less than 2.0 μm, and all or part of the end face is a melt-solidified surface. Here, the "overall plate thickness deviation" is the difference between the maximum plate thickness and the minimum plate thickness of the entire glass plate, and can be measured by, for example, SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd.

The glass plate of the present invention has an overall plate thickness deviation of less than 2.0 μm. When the overall plate thickness deviation is reduced to less than 2.0 μm, it becomes easy to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible. In addition, the in-plane strength of the glass plate is improved, and the glass plate and the laminate are less likely to be damaged. Furthermore, the number of times the glass plate can be reused (useful number) can be increased.

In the glass plate of the present invention, all or part of the end face is a melt-solidified surface. As a result, the microcracks existing on the end face are melted and disappear to be in a smooth state, so that the end face strength of the glass plate can be significantly increased.

FIG. 1 is a cross-sectional photograph showing a state in which an end face of a glass plate is melted and solidified by laser irradiation. As can be seen from FIG. 1, the end surface of the glass plate has a smooth mirror surface, and is in a state of a spherical liquid pool, that is, a state of bulging in a spherical shape. FIG. 2 is a cross-sectional photograph showing a state in which the bulging portion of the glass plate shown in FIG. 1 is removed by polishing to reduce the overall plate thickness deviation to less than 2.0 μm.

Secondly, the glass plate of the present invention preferably has an overall plate thickness deviation of less than 1.0 μm.

Third, in the glass plate of the present invention, it is preferable that the melt-solidified surface is formed by laser irradiation. This makes it easier to adjust the area of melt solidification of the end face. Further, it becomes easy to adjust the bulging state of the melt-solidified surface.

Fourth, the glass plate of the present invention preferably has a warp amount of 60 μm or less. Here, the "warp amount" refers to the sum of the absolute value of the maximum distance between the highest point and the least squares focal plane and the absolute value of the lowest point and the least squares focal plane in the entire glass plate, for example. It can be measured by SBW-331ML / d manufactured by Kobelco Research Institute.

Fifth, the glass plate of the present invention preferably has a polished surface in whole or in part.

Sixth, the glass plate of the present invention is preferably formed by an overflow down draw method.

Seventh, the glass plate of the present invention preferably has a Young's modulus of 65 GPa or more. Here, "Young's modulus" refers to a value measured by the bending resonance method. In addition, 1 GPa corresponds to about 101.9 Kgf / mm ² .

Eighth, the glass plate of the present invention preferably has a wafer shape in outer shape.

Ninth, the glass plate of the present invention is preferably used for supporting a processed substrate in the manufacturing process of a semiconductor package.

Tenth, the laminate of the present invention is a laminate including at least a processed substrate and a glass plate for supporting the processed substrate, and the glass plate is preferably the above-mentioned glass plate.

Eleventh, the method for producing a glass plate of the present invention is (1) a step of cutting a glass original plate to obtain a glass plate, and (2) melting a part or all of the end face of the glass plate by laser irradiation. It is characterized by having a step of solidifying after the glass plate, and (3) a step of polishing the surface of the glass plate so that the total thickness deviation of the glass plate is less than 2.0 μm.

Twelfth, in the method for producing a glass plate of the present invention, it is preferable to form a glass original plate by an overflow down draw method.

It is a cross-sectional photograph which shows the state which the end face of a glass plate was melt-solidified by laser irradiation. FIG. 5 is a cross-sectional photograph showing a state in which the bulging portion of the glass plate shown in FIG. 1 is removed by polishing to reduce the overall plate thickness deviation to less than 2.0 μm. It is a conceptual perspective view which shows an example of the laminated body of this invention. It is a conceptual cross-sectional view which shows the manufacturing process of a fan-out type WLP.

In the glass plate of the present invention, the overall plate thickness deviation is preferably less than 2 μm, 1.5 μm or less, 1 μm or less, less than 1 μm, 0.8 μm or less, 0.1 to 0.9 μm, and particularly 0.2 to 0.7 μm. Is. The smaller the deviation in the overall plate thickness, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible. In addition, the strength of the glass plate is improved, and the glass plate and the laminate are less likely to be damaged. Furthermore, the number of times the glass plate can be reused (useful number) can be increased.

In the glass plate of the present invention, all or part of the end face is a melt-solidified surface, and in terms of area ratio, 70% or more of the end face is preferably a melt-solidified surface, and 90% or more of the end face is a melt-solidified surface. Is more preferable, and it is further preferable that the entire end face is a melt-solidified surface. The higher the ratio of the melt-solidified surface in the end face, the higher the end face strength of the glass plate can be.

Various methods can be adopted as a method for forming a melt-solidified surface on the end face. For example, a method of directly heating with a burner, a method of locally heating by laser irradiation, and the like can be mentioned. In the latter method, the region to be melted and solidified can be easily adjusted by adjusting the irradiation conditions, and the bulging state of the melted and solidified surface can be adjusted. It is preferable because it is easy to adjust. Further, if the glass plate is melted by laser irradiation, a melt-solidified surface can be formed on the end surface of the glass plate. Various lasers can be used as the laser. For example, a CO ₂ laser, a YAG laser, or the like can be used, and it is particularly preferable to use a CO ₂ laser having a wavelength of 10.6 μm. In this way, the laser light can be accurately absorbed by the glass plate.

The end face is preferably R-shaped (hemispherical) from the viewpoint of increasing the end face strength. It should be noted that such an end face shape can be formed by, for example, forming a spherical bulge on the end face by laser irradiation and then removing the bulge raised from the surface by a polishing treatment.

The amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, and particularly 5 to 40 μm. The smaller the amount of warpage, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible. Furthermore, the number of times the glass plate can be reused (useful number) can be increased.

The arithmetic mean roughness Ra of the surface is preferably 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, and particularly 0.5 nm or less. The smaller the arithmetic mean roughness Ra of the surface, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible. In addition, the strength of the glass plate is improved, and the glass plate and the laminate are less likely to be damaged. Furthermore, the number of times the glass plate can be reused (the number of times it is supported) can be increased. The "arithmetic mean roughness Ra" can be measured by an atomic force microscope (AFM).

In the glass plate of the present invention, it is preferable that all or part of the surface is a polished surface, more preferably 50% or more of the surface is a polished surface in terms of area ratio, and 70% or more of the surface is a polished surface. More preferably, 90% or more of the surface is a polished surface. By doing so, it becomes easy to reduce the deviation of the total plate thickness, and it becomes easy to reduce the amount of warpage.

Various methods can be adopted as the polishing treatment method, but a method in which both sides of the glass plate are sandwiched between a pair of polishing pads and the glass plate is polished while rotating the glass plate and the pair of polishing pads together. Is preferable. Further, it is preferable that the pair of polishing pads have different outer diameters, and it is preferable to perform polishing treatment so that a part of the glass plate intermittently protrudes from the polishing pads during polishing. This makes it easier to reduce the overall plate thickness deviation and also makes it easier to reduce the amount of warpage. In the polishing treatment, the polishing depth is not particularly limited, but the polishing depth is preferably 50 μm or less, 30 μm or less, 20 μm or less, and particularly 10 μm or less. The smaller the polishing depth, the higher the productivity of the glass plate.

The glass plate of the present invention is preferably in the form of a wafer (substantially a perfect circle), and its diameter is preferably 100 mm or more and 500 mm or less, particularly 150 mm or more and 450 mm or less. In this way, it becomes easy to apply to the manufacturing process of the semiconductor package. If necessary, it may be processed into another shape, for example, a shape such as a rectangle.

In the glass plate of the present invention, the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, and particularly 0.9 mm or less. As the plate thickness becomes thinner, the mass of the laminated body becomes lighter, so that the handleability is improved. On the other hand, if the plate thickness is too thin, the strength of the glass plate itself decreases, and it becomes difficult to fulfill the function as a support plate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and particularly 0.7 mm or more.

The glass plate of the present invention preferably has the following characteristics.

In the glass plate of the present invention, the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C. is preferably 0 × 10 ^-7 / ° C. or higher and 165 × 10 ^-7 / ° C. or lower. This makes it easier to match the coefficients of thermal expansion of the processed substrate and the glass plate. When the coefficients of thermal expansion of both are matched, it becomes easy to suppress a dimensional change (particularly, warpage deformation) of the processed substrate during the processing. As a result, high-density wiring can be performed on one surface of the processed substrate, and solder bumps can be accurately formed. The "average coefficient of thermal expansion in the temperature range of 30 to 380 ° C." can be measured with a dilatometer.

The average coefficient of thermal expansion in the temperature range of 30 to 380 ° C. is preferably increased when the proportion of semiconductor chips in the processed substrate is small and the proportion of encapsulant is large, and conversely, the semiconductor chips in the processed substrate. When the proportion of the encapsulant is large and the proportion of the encapsulant is small, it is preferable to reduce the ratio.

When the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C. is 0 × ^10-7 / ° C. or higher and less than 50 × ^10-7 / ° C., the glass plate has a glass composition of SiO ₂ 55 in mass%. It is preferable to contain ~ 75%, Al ₂ O ₃ 15 to 30%, Li ₂ O 0.1 to 6%, Na ₂ O + K ₂ O 0 to 8%, MgO + CaO + SrO + BaO 0 to 10%, or SiO ₂ 55 to 5 It is also preferable to contain 75%, Al ₂ O ₃ 10 to 30%, Li ₂ O + Na ₂ O + K ₂ O 0 to 0.3%, and MgO + CaO + SrO + BaO 5 to 20%. When the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C. is 50 × ^10-7 / ° C. or higher and less than 75 × ^10-7 / ° C., the glass plate has a glass composition of SiO ₂ 55 in mass%. ~ 70%, Al ₂ O _{3 3 to} 15%, B ₂ O ₃ 5 to 20%, MgO 0 to 5%, CaO 0 to 10%, SrO 0 to 5%, BaO 0 to 5%, ZnO 0 to 5 %, Na ₂ O 5 to 15%, and K ₂ O 0 to 10% are preferably contained. The average thermal expansion coefficient in a temperature range of 30~380 ℃ 75 × ^{10 -7} / ℃ or higher, and if the 85 × ^{10 -7} / ℃ less, a glass plate, as a glass composition, in mass%, _SiO 2 60 ~ 75%, Al ₂ O ₃ 5-15%, B ₂ O ₃ 5-20%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0-5 %, Na ₂ O 7 to 16%, and K ₂ O 0 to 8% are preferably contained. When the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C. is more than 85 × ^10-7 / ° C. and 120 × ^10-7 / ° C. or less, the glass plate has a glass composition of SiO ₂ 55 in mass%. ~ 70%, Al ₂ O _{3 3} ~ 13%, B ₂ O ₃ 2-8%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0-5 %, Na ₂ O 10 to 21%, and K ₂ O 0 to 5% are preferably contained. When the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C. is more than 120 × ^10-7 / ° C. and 165 × ^10-7 / ° C. or less, the glass plate has a glass composition of SiO ₂ 53 in mass%. ~ 65%, Al ₂ O _{3 3} ~ 13%, B ₂ O ₃₀ ~ 5%, MgO 0.1-6%, CaO 0 ~ 10%, SrO 0 ~ 5%, BaO 0 ~ 5%, ZnO 0 It preferably contains ~ 5%, Na ₂ O + K ₂ O 20-40%, Na ₂ O 12-21%, and K ₂ O 7-21%. By doing so, it becomes easy to regulate the coefficient of thermal expansion within a desired range, and the devitrification resistance is improved, so that it becomes easy to form a glass plate having a small deviation in overall plate thickness.

The Young's modulus is preferably 65 GPa or more, 67 GPa or more, 68 GPa or more, 69 GPa or more, 70 GPa or more, 71 GPa or more, 72 GPa or more, and particularly 73 GPa or more. If the Young's modulus is too low, it becomes difficult to maintain the rigidity of the laminated body, and the processed substrate is likely to be deformed, warped, or damaged.

The liquidus temperature is preferably less than 1150 ° C., 1120 ° C. or lower, 1100 ° C. or lower, 1080 ° C. or lower, 1050 ° C. or lower, 1010 ° C. or lower, 980 ° C. or lower, 960 ° C. or lower, 950 ° C. or lower, particularly 940 ° C. or lower. By doing so, it becomes easy to form the glass plate by the down draw method, particularly the overflow down draw method, so that it becomes easy to produce a glass plate having a small plate thickness, and it is possible to reduce the plate thickness deviation after molding. .. Further, it becomes easy to prevent a situation in which devitrified crystals are generated during the manufacturing process of the glass plate and the productivity of the glass plate is lowered. Here, the "liquid phase temperature" is determined by passing the standard sieve 30 mesh (500 μm), putting the glass powder remaining in 50 mesh (300 μm) into a platinum boat, and then holding the glass powder in a temperature gradient furnace for 24 hours to crystallize. It can be calculated by measuring the temperature at which the glass precipitates.

The viscosity at the liquidus temperature is preferably 10 ^4.6 dPa · s or higher, 10 ^5.0 dPa · s or higher, 10 ^5.2 dPa · s or higher, 10 ^5.4 dPa · s or higher, and 10 ^5.6 dPa. -S or more, especially 10 ^5.8 dPa · s or more. By doing so, it becomes easy to form the glass plate by the down draw method, particularly the overflow down draw method, so that it becomes easy to produce a glass plate having a small plate thickness, and it is possible to reduce the plate thickness deviation after molding. .. Further, it becomes easy to prevent a situation in which devitrified crystals are generated during the manufacturing process of the glass plate and the productivity of the glass plate is lowered. Here, the "viscosity at the liquidus temperature" can be measured by the platinum ball pulling method. The viscosity at the liquidus temperature is an index of moldability, and the higher the viscosity at the liquidus temperature, the better the moldability.

The temperature at 10 ^2.5 dPa · s is preferably 1580 ° C. or lower, 1500 ° C. or lower, 1450 ° C. or lower, 1400 ° C. or lower, 1350 ° C. or lower, particularly 1200 to 1300 ° C. When the temperature at 10 ^2.5 dPa · s becomes high, the meltability decreases and the manufacturing cost of the glass plate rises. Here, the "temperature at 10 ^2.5 dPa · s" can be measured by the platinum ball pulling method. The temperature at 10 ^2.5 dPa · s corresponds to the melting temperature, and the lower the temperature, the better the meltability.

In the glass plate of the present invention, the ultraviolet transmittance in the plate thickness direction at a wavelength of 300 nm is preferably 40% or more, 50% or more, 60% or more, 70% or more, and particularly 80% or more. If the ultraviolet transmittance is too low, it becomes difficult for the adhesive layer to bond the processed substrate and the glass plate due to irradiation with ultraviolet light, and in addition, the peeling layer makes it difficult to peel the glass plate from the processed substrate. The "ultraviolet transmittance in the plate thickness direction at a wavelength of 300 nm" can be evaluated by measuring the spectral transmittance at a wavelength of 300 nm using, for example, a double beam spectrophotometer.

The glass plate of the present invention is preferably formed by a downdraw method, particularly an overflow downdraw method. In the overflow down draw method, molten glass is overflowed from both sides of a heat-resistant gutter-shaped structure, and the overflowed molten glass is merged at the lower apex of the gutter-shaped structure and stretched downward to form a glass original plate. How to do it. In the overflow down draw method, the surface of the glass plate, which should be the surface, does not come into contact with the gutter-shaped refractory and is formed in a free surface state. Therefore, it becomes easy to manufacture a glass plate having a small plate thickness, and the deviation of the total plate thickness can be reduced, and as a result, the manufacturing cost of the glass plate can be reduced.

In addition to the overflow down draw method, for example, a slot down method, a redraw method, a float method, a rollout method, and the like can be adopted as a method for forming the glass original plate.

The glass plate of the present invention preferably has a polished surface on its surface and is formed by an overflow down draw method. By doing so, the total plate thickness deviation before the polishing treatment becomes small, so that the total plate thickness deviation can be reduced as much as possible by the polishing treatment. For example, the overall plate thickness deviation can be reduced to 1.0 μm or less.

From the viewpoint of reducing the amount of warpage, the glass plate of the present invention is preferably not chemically strengthened. On the other hand, from the viewpoint of mechanical strength, it is preferable that the chemical strengthening treatment is performed. That is, from the viewpoint of reducing the amount of warpage, it is preferable not to have a compressive stress layer on the surface, and from the viewpoint of mechanical strength, it is preferable to have a compressive stress layer on the surface.

The method for producing a glass plate of the present invention is (1) a step of cutting a glass original plate to obtain a glass plate, and (2) a part or all of the end face of the glass plate is melted and then solidified by laser irradiation. It is characterized by having a step and (3) a step of polishing the surface of the glass plate so that the total thickness deviation of the glass plate is less than 2.0 μm. Here, the technical features (suitable configuration, effect) of the method for producing a glass plate of the present invention overlap with the technical features of the glass plate of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The method for producing a glass plate of the present invention includes a step of cutting a glass original plate to obtain a glass plate. Various methods can be adopted as a method for cutting the glass original plate. For example, a method of cutting by a thermal shock at the time of laser irradiation and a method of folding after scribing can be used.

The method for producing a glass plate of the present invention includes a step of melting a part or all of the end face of the glass plate by laser irradiation and then solidifying the glass plate, and a preferred embodiment of this step is as described above.

The method for producing a glass plate of the present invention preferably includes a step of annealing the glass plate after forming a melt-solidified surface on the end surface of the glass plate. From the viewpoint of reducing the residual stress of the end face and the amount of warpage of the glass plate, the annealing temperature is preferably set to be equal to or higher than the softening point of the glass plate, and the holding time at the annealing temperature is preferably set to 30 minutes or longer. Annealing can be performed in a heat treatment furnace such as an electric furnace.

The method for producing a glass plate of the present invention includes a step of polishing the surface of the glass plate so that the total thickness deviation of the glass plate is less than 2.0 μm. A preferred embodiment of the process is as described above.

The laminate of the present invention is a laminate including at least a processed substrate and a glass plate for supporting the processed substrate, and the glass plate is the above-mentioned glass plate. Here, the technical features (suitable configuration, effect) of the laminate of the present invention overlap with the technical features of the glass plate of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The laminate of the present invention preferably has an adhesive layer between the processed substrate and the glass plate. The adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like. Further, those having heat resistance to withstand heat treatment in the manufacturing process of the semiconductor package are preferable. As a result, the adhesive layer is less likely to melt in the manufacturing process of the semiconductor package, and the accuracy of the processing process can be improved.

The laminate of the present invention further has a release layer between the processed substrate and the glass plate, more specifically between the processed substrate and the adhesive layer, or has a release layer between the glass plate and the adhesive layer. Is preferable. By doing so, it becomes easy to peel off the processed substrate from the glass plate after performing a predetermined processing treatment on the processed substrate. From the viewpoint of productivity, it is preferable to peel off the processed substrate by laser irradiation or the like.

The peeling layer is made of a material that causes "intra-layer peeling" or "interfacial peeling" by laser irradiation or the like. That is, when irradiated with light of a certain intensity, the intermolecular or intermolecular bonding force in the atom or molecule disappears or decreases, causing ablation or the like, and the material is composed of a material that causes peeling. In addition, there are cases where the components contained in the peeling layer are released as a gas and lead to separation by irradiation with irradiation light, and cases where the peeling layer absorbs light and becomes a gas and the vapor is released and leads to separation. There is.

In the laminate of the present invention, the glass plate is preferably larger than the processed substrate. As a result, when supporting the processed substrate and the glass plate, even if the center positions of the two are slightly separated from each other, the edge portion of the processed substrate is less likely to protrude from the glass plate.

The method for manufacturing a semiconductor package according to the present invention includes a step of preparing a laminate including at least a processed substrate and a glass plate for supporting the processed substrate, and a step of performing a processing process on the processed substrate. At the same time, the glass plate is the above-mentioned glass plate. Here, the technical features (suitable configuration, effect) of the method for manufacturing a semiconductor package according to the present invention overlap with the technical features of the glass plate and the laminate of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The method for manufacturing a semiconductor package according to the present invention includes a step of preparing a laminate including at least a processed substrate and a glass plate for supporting the processed substrate. The laminate including at least the processed substrate and the glass plate for supporting the processed substrate has the above-mentioned material composition.

The method for manufacturing a semiconductor package according to the present invention preferably further includes a step of transporting the laminate. Thereby, the processing efficiency of the processing process can be improved. It should be noted that the "step of transporting the laminated body" and the "step of performing the processing process on the processed substrate" do not have to be performed separately and may be performed at the same time.

In the method for manufacturing a semiconductor package according to the present invention, the processing is preferably a process of wiring on one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package according to the present invention, since the size of the processed substrate is unlikely to change during these processes, these steps can be appropriately performed.

In addition to the above, the processing includes processing to mechanically polish one surface of the processed substrate (usually the surface opposite to the glass plate) and one surface of the processed substrate (usually the side opposite to the glass plate). The surface) may be dry-etched, or one surface of the processed substrate (usually the surface opposite to the glass plate) may be wet-etched. In the method for manufacturing a semiconductor package of the present invention, the processed substrate is less likely to warp and the rigidity of the laminated body can be maintained. As a result, the above processing can be performed properly.

The semiconductor package according to the present invention is characterized in that it is manufactured by the above-mentioned method for manufacturing a semiconductor package. Here, the technical features (suitable configuration, effect) of the semiconductor package of the present invention overlap with the technical features of the method for manufacturing the glass plate, laminate and semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The electronic device according to the present invention is an electronic device including a semiconductor package, and the semiconductor package is the above-mentioned semiconductor package. Here, the technical features (suitable configuration, effect) of the electronic device of the present invention overlap with the glass plate, laminate, manufacturing method of the semiconductor package, and the technical features of the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The present invention will be further described with reference to the drawings.

FIG. 3 is a conceptual perspective view showing an example of the laminated body 1 of the present invention. In FIG. 3, the laminated body 1 includes a glass plate 10 and a processed substrate 11. The glass plate 10 is attached to the processed substrate 11 in order to prevent the dimensional change of the processed substrate 11. A release layer 12 and an adhesive layer 13 are arranged between the glass plate 10 and the processed substrate 11. The release layer 12 is in contact with the glass plate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

As can be seen from FIG. 3, the laminated body 1 is laminated in the order of the glass plate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11. The shape of the glass plate 10 is determined according to the processed substrate 11, but in FIG. 3, the shapes of the glass plate 10 and the processed substrate 11 are both substantially disk shapes. In addition to amorphous silicon (a-Si), silicon oxide, silicic acid compound, silicon nitride, aluminum nitride, titanium nitride and the like are used for the release layer 12. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of resin and is formed by coating, for example, by various printing methods, an inkjet method, a spin coating method, a roll coating method, or the like. The adhesive layer 13 is dissolved and removed by a solvent or the like after the glass plate 10 is peeled from the processed substrate 11 by the peeling layer 12.

FIG. 4 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type WLP. FIG. 4A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. If necessary, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in FIG. 4B, a plurality of semiconductor chips 22 are attached onto the adhesive layer 21. At that time, the active side surface of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 4C, the semiconductor chip 22 is molded with the resin encapsulant 23. As the sealing material 23, a material having little dimensional change after compression molding and dimensional change when molding wiring is used. Subsequently, as shown in FIGS. 4 (d) and 4 (e), the processed substrate 24 on which the semiconductor chip 22 is molded is separated from the support member 20, and then bonded and fixed to the glass plate 26 via the adhesive layer 25. .. At that time, among the surfaces of the processed substrate 24, the surface opposite to the surface on the side where the semiconductor chip 22 is embedded is arranged on the glass plate 26 side. In this way, the laminated body 27 can be obtained. If necessary, a release layer may be formed between the adhesive layer 25 and the glass plate 26. Further, after transporting the obtained laminate 27, as shown in FIG. 4 (f), after forming the wiring 28 on the surface of the processed substrate 24 on the side where the semiconductor chip 22 is embedded, a plurality of solder bumps 29 To form. Finally, after separating the processed substrate 24 from the glass plate 26, the processed substrate 24 is cut for each semiconductor chip 22 and used for a subsequent packaging step.

Hereinafter, the present invention will be described based on examples. The following examples are merely examples. The present invention is not limited to the following examples.

As a glass composition, in _{mass%, SiO 2 65.2%, Al} 2 O 3 8%, B 2 O 3 10.5%, Na 2 O 11.5%, CaO 3.4%, ZnO 1%, SnO _{2 0.3%,} so that the _Sb 2 O 3 0.1% after formulating the glass raw material, was charged into a glass melting furnace and melted at 1,500 to 1,600 ° C., then overflow down draw forming apparatus molten glass And molded so that the plate thickness was 0.7 mm.

Next, the obtained glass original plate is hollowed out into a wafer shape to obtain a glass plate, and the entire end face of the glass plate is continuously irradiated with a CO ₂ laser on the entire end face of the glass plate. After melting to form a spherical bulge, it was cooled and solidified. Further, the residual stress of the bulging portion was removed by annealing the glass plate under the condition of 90 minutes at the temperature (softening point of the glass plate + 50 ° C.). The wavelength of the CO ₂ laser was 10.6 μm, and the laser output was adjusted to 9 to 18 W.

Subsequently, by polishing the surface of the glass plate with a polishing device, the bulging portion of the glass plate was removed and the deviation in the overall thickness of the glass plate was reduced. Specifically, both surfaces of the glass plate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass plate were polished while rotating the glass plate and the pair of polishing pads together. During the polishing process, it was occasionally controlled so that a part of the glass plate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. For the obtained glass plates (5 samples each) before and after the polishing treatment, the maximum plate thickness (Maximum Tickness), the minimum plate thickness (Minimum Tickness), and the average plate thickness (Average Tickness) were obtained by SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd. And the total plate thickness deviation (TTV) was measured. Table 1 shows the measurement results of the glass plate before the polishing treatment (however, the measurement is performed in the region excluding the bulging portion), and Table 2 shows the measurement results of the glass plate after the polishing treatment.

As can be seen from Tables 1 and 2, the deviation in the overall thickness of the glass plate was reduced to 0.8 μm or less.

Furthermore, a four-point bending test was performed on the polished glass plate (10 samples) and the glass plate (10 samples) before CO ₂ laser irradiation using the Shimadzu precision universal testing machine Autograph AG-IS. went. The results are shown in Table 3. The conditions for the four-point bending test were a pressure jig width of 25 mm, a support jig width of 50 mm, and a crosshead descent speed of 5 mm / min.

As is clear from Table 3, by using the end face of the glass plate as the melt-solidified surface, the end face strength could be significantly increased.

First, the sample Nos. After the glass raw materials are mixed so as to have a glass composition of 1 to 7, they are put into a glass melting furnace and melted at 1500 to 1600 ° C., and then the molten glass is supplied to an overflow down draw molding apparatus, and the plate thickness is 0. Each was molded to be 0.8 mm. Then, under the same conditions as in [Example 1], the glass original plate was hollowed out into a wafer shape, the entire end face of the obtained glass plate was used as a melt-solidified surface, and further annealing treatment was performed. For each of the obtained glass plate, an average thermal expansion coefficient alpha _{30 to 380} in the temperature range of 30 to 380 ° C., at a density [rho, strain point Ps, the annealing point Ta, the softening point Ts, high temperature viscosity ¹⁰ 4.0 dPa · s The temperature, the temperature at a high temperature viscosity of 10 ^3.0 dPa · s, the temperature at a high temperature viscosity of 10 ^2.5 dPa · s, the temperature at a high temperature viscosity of 10 ^2.0 dPa · s, the liquidus temperature TL and the Young rate E were evaluated. When the total plate thickness deviation and the amount of warpage were measured for each glass plate after cutting and before melting and solidifying with SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd., the total plate thickness deviation was 3 μm, and the amount of warpage was Each was 70 μm.

The average coefficient of thermal expansion α _{30 to 380} in the temperature range of 30 to 380 ° C. is a value measured by a dilatometer.

The density ρ is a value measured by the well-known Archimedes method.

The strain point Ps, the annealing point Ta, and the softening point Ts are values measured based on the method of ASTM C336.

The temperature at a high temperature viscosity of 10 ^4.0 dPa · s, 10 ^3.0 dPa · s, and 10 ^2.5 dPa · s is a value measured by the platinum ball pulling method.

The liquidus temperature TL is the temperature at which crystals precipitate after passing through a standard sieve of 30 mesh (500 μm) and placing the glass powder remaining in 50 mesh (300 μm) in a platinum boat and holding it in a temperature gradient furnace for 24 hours. It is a value measured by microscopic observation.

Young's modulus E refers to a value measured by the resonance method.

Subsequently, the surface of the glass plate was polished by a polishing device. Specifically, both surfaces of the glass plate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass plate were polished while rotating the glass plate and the pair of polishing pads together. During the polishing process, it was occasionally controlled so that a part of the glass plate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. For each of the obtained polished glass plates, the total plate thickness deviation and the amount of warpage were measured by SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd. As a result, the total plate thickness deviation was 0.45 μm, and the warpage amount was 35 μm, respectively.

10, 27 Laminates 11, 26 Glass plates 12, 24 Processed substrates 13 Release layers 14, 21, 25 Adhesive layers 20 Support members 22 Semiconductor chips 23 Encapsulants 28 Wiring 29 Solder bumps

Claims (10)

All or part of the surface is a polished surface, the plate thickness is 0.4 mm or more and less than 2.0 mm , the total plate thickness deviation is less than 2.0 μm, and all or part of the end surface is a melt-solidified surface. Ah is, and a glass plate, characterized in that is characterized by using a support processed substrate in the manufacturing process of the semiconductor package. The glass plate according to claim 1, wherein the total plate thickness deviation is less than 1.0 μm. The glass plate according to claim 1 or 2, wherein the melt-solidified surface is formed by laser irradiation. The glass plate according to any one of claims 1 to 3, wherein the amount of warpage is 60 μm or less. The glass plate according to any one of claims 1 to 4, wherein 90% or more of the surface is a polished surface. The glass plate according to any one of claims 1 to 5, wherein the glass has a molding confluence surface inside the glass. The glass plate according to any one of claims 1 to 6, wherein the Young's modulus is 65 GPa or more. The glass plate according to any one of claims 1 to 7, wherein the outer shape is a wafer shape. The glass plate according to any one of claims 1 to 8, wherein the processed substrate is a processed substrate in which a plurality of semiconductor chips are molded with a resin encapsulant . A laminate including at least a processed substrate and a glass plate for supporting the processed substrate, wherein the glass plate is the glass plate according to any one of claims 1 to 9.