JP6756564B2 - Crystal element, crystal device and manufacturing method of crystal element - Google Patents

Description

The present invention relates to a quartz element, a quartz device, and a method for manufacturing a quartz device.

The crystal device is, for example, in a state in which a crystal element mounted on a substrate is hermetically sealed in a space formed by joining a substrate and a lid. The crystal element used in the crystal device consists of a crystal piece, an excitation electrode portion provided on the crystal piece, an extraction portion, and a wiring portion. When an alternating voltage is applied to the extraction portion, the excitation electrode is provided via the wiring portion. An alternating voltage is applied to the portion, and a part of the crystal piece sandwiched between the excitation electrode portions vibrates due to the inverse piezoelectric effect and the piezoelectric effect (see, for example, Patent Document 1).

Quartz pieces used in high frequency band crystal devices are provided and fixed between a fixed portion that is directly adhered to a substrate, a flat plate portion that is sufficiently thinner in the vertical direction than the fixed portion, and the fixed portion and the flat plate portion. It is provided with an intermediate portion in which the thickness in the vertical direction gradually decreases from the portion to the flat plate portion. The fixed portion and the flat plate portion have a substantially rectangular parallelepiped shape. Further, the upper surface of the fixed portion and the upper surface of the flat plate portion are located on the same plane. A through hole penetrating in the vertical direction is formed in the intermediate portion. In a crystal element using such a crystal piece, excitation electrode portions are provided on both main surfaces of the flat plate portion, and drawer portions are arranged side by side on the lower surface of the fixed portion.
At least a part of the wiring portion that electrically connects the excitation electrode portion and the extraction portion is provided on the inner wall surface of the through hole, and both main surfaces of the flat plate portion, both main surfaces of the fixed portion, and the middle portion. It is provided on the surface of the part. At this time, the wiring portion, the surface to be the side surface of the crystal piece, specifically, the side surface of the fixed portion, the side surface of the flat plate portion, and the side surface of the inclined portion are not provided (for example, Patent Document 2). reference).

Japanese Unexamined Patent Publication No. 2014-11647 Japanese Unexamined Patent Publication No. 2016-34061

In the conventional crystal element, the wiring portion is not provided on the side surface portion of the crystal piece, but is partially provided on the inner wall portion of the through hole formed in the intermediate portion, and is provided on the flat plate portion. The excitation electrode portion provided on the upper surface and the drawer portion provided on the lower surface of the fixed portion are electrically connected. At this time, the wiring portion near the opening of the through hole is partially thinned or partially thinned in the vertical direction.
There is a risk that the wiring portion will break and will not oscillate, or the resistance value of the wiring portion will increase and the equivalent series resistance value of the crystal element will increase.

The present invention provides a crystal element and a crystal device capable of reducing non-oscillation or an increase in the equivalent series resistance value caused by a wiring portion that electrically connects the excitation electrode portion and the extraction portion. The purpose is.

In order to solve the above-mentioned problems, the crystal element according to the present invention is
A flat plate part with a substantially rectangular parallelepiped shape, a fixed part with a substantially rectangular parallelepiped shape that is thicker in the vertical direction than the flat plate part, and
A crystal piece located between the flat plate portion and the fixed portion and consisting of an intermediate portion whose thickness in the vertical direction gradually increases from the flat plate portion to the fixed portion.
Excitation electrode portions provided on both main surfaces of the flat plate portion, drawer portions provided on the lower surface of the fixed portion, and
A quartz element having a metal pattern consisting of a wiring portion having one end connected to an excitation electrode portion and the other end connected to a drawer portion.
A through hole is formed in the middle part that penetrates in the vertical direction, and a part of the metal pattern is
It is provided on the inner wall surface of the through hole formed on the side surface and the intermediate portion of the crystal piece .
When the underside of the crystal piece is viewed in a plane
The upper surface of the flat plate portion and the upper surface of the fixed portion are located on the same plane.
It is characterized in that the corner portion of the intermediate portion facing the flat plate portion side has an arc shape .

The crystal element according to the present invention is a substantially rectangular flat plate portion, a substantially rectangular fixed portion having a thickness in the vertical direction thicker than the flat plate portion, and a flat plate portion located between the flat plate portion and the fixed portion. A crystal piece consisting of an intermediate portion whose thickness increases in the vertical direction from the to the fixed portion, an excitation electrode portion provided on both main surfaces of the flat plate portion, a drawer portion provided on the lower surface of the fixed portion, and A metal pattern consisting of a wiring part with one end connected to the excitation electrode and the other end connected to the drawer.
A through hole that penetrates in the vertical direction is formed in the middle part of the crystal element, and a part of the metal pattern is formed in the side surface and the middle part of the crystal piece. It is provided on the inner wall surface ,
When the lower surface of the crystal piece is viewed in a plane, the upper surface of the flat plate portion and the upper surface of the fixed portion are located on the same plane, and the corner portion of the intermediate portion facing the flat plate portion side has an arc shape . Therefore, the upper surface side of the flat plate portion and the lower surface side of the fixed portion can be reliably and electrically connected. Therefore, it is possible to reduce non-oscillation due to disconnection of the wiring portion, or reduce the increase in the equivalent series resistance value of the crystal element due to the increase in the resistance value of the wiring portion.

It is a perspective view of the crystal device which concerns on this embodiment. It is sectional drawing in the AA cross section of FIG. It is a perspective view of the crystal element of Example 1. FIG. (A) is a plan view of the upper surface of the crystal piece used in the crystal element of Example 1, and (b) is a plan view of the lower surface of the crystal piece used in the crystal element of Example 1 from the upper surface side. It is a plan view. (A) is a plan view of the upper surface of the crystal element of the first embodiment in a plan view, and (b) is a plan view of the lower surface of the crystal element of the first embodiment in a plan view from the upper surface side. It is a partially enlarged view of the part B of FIG. (A) is a plan view of the upper surface of the crystal piece used in the crystal element of Example 2, and (b) is a plan view of the lower surface of the crystal piece used in the crystal element of Example 2 from the upper surface side. It is a plan view. (A) is a plan view of the upper surface of the crystal element of the second embodiment in a plan view, and (b) is a plan view of the lower surface of the crystal element of the second embodiment in a plan view from the upper surface side. (A) is a plan view of the upper surface of the crystal piece used in the crystal element of Example 3, and (b) is a plan view of the lower surface of the crystal piece used in the crystal element of Example 3 from the upper surface side. It is a plan view. (A) is a plan view of the upper surface of the crystal element of the third embodiment in a plan view, and (b) is a plan view of the lower surface of the crystal element of the third embodiment in a plan view from the upper surface side. It is a flow figure which showed the flow of the manufacturing method of the crystal element which concerns on this embodiment.

(Outline configuration of crystal device)
FIG. 1 is a perspective view of the crystal device according to the present embodiment, and FIG. 2 is a cross-sectional view taken along the line AA of FIG. The crystal device according to the present embodiment will be described when the crystal element 120 of the first embodiment is mounted.

A crystal device is, for example, an electronic component having a substantially rectangular parallelepiped shape as a whole. The crystal device has, for example, a long side or a short side having a length of 0.6 mm to 2.0 mm and a thickness in the vertical direction of 0.2 mm to 1.5 mm.

The crystal device includes, for example, a substrate 110 having a recess, a crystal element 120 containing the recess, a lid 130 for closing the recess, and a conductive adhesive for adhering and mounting the crystal element 120 to the substrate 110. It is composed of agent 140 and.

The recess of the substrate 110 is sealed by the lid 130, and the inside thereof is, for example, evacuated or filled with a suitable gas (for example, nitrogen).

The substrate 110 includes, for example, a substrate portion 110a that is the main body of the substrate 110, a frame portion 110b provided along the edge of the upper surface of the substrate portion 110a, and a mounting pad 111 for mounting the crystal element 120. It comprises a mounting terminal 112 for mounting a crystal device on a circuit board (not shown) or the like. The substrate 110 is provided with a frame-shaped frame portion 110b along the edge of the upper surface of the substrate portion 110a, and a recess is formed.

The substrate 110 composed of the substrate portion 110a and the frame portion 110b is made of an insulating material such as a ceramic material. The mounting pad 111 and the mounting terminal 112 are formed of, for example, a conductive layer made of metal or the like, and are electrically connected to each other by a conductor (not shown) arranged in the substrate portion 110a. The lid 130 is made of metal, for example, and is joined to the base 110, specifically, the upper surface of the frame 110b by seam welding or the like.

The crystal element 120 is composed of a crystal piece 121 having a cantilever shape and a metal pattern 123 provided on the crystal piece 121. The cantilever-shaped crystal piece 121 is provided between the flat plate portion 121a of the thin rectangular parallelepiped, the fixing portion 121c of the thin rectangular parallelepiped thinner than the flat plate portion 121a, and the flat plate portion 121a and the fixing portion 121c. It is composed of a part 121b. Therefore,
When the crystal piece 121 is viewed in a plan view, the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c are arranged side by side in this order. The metal pattern 123 provided on such a crystal piece 121 is composed of an excitation electrode portion 123a, a drawer portion 123b, and a wiring portion 123c.

As described above, the crystal element 120 has a cantilever shape and is an AT-cut crystal element. That is, in the crystal, the famous coordinate system XYZ consisting of the X-axis (electric axis), the Y-axis (mechanical axis), and the Z-axis (optical axis) is 30 ° or more and 50 ° or less (for example, 35 ° 15) around the X-axis. ′) When the orthogonal coordinate system XY ′ Z ′ is defined by rotation, it is formed from a plate-shaped crystal wafer cut out in parallel with the XZ ′ plane, and the main surface of the flat plate portion 121a is parallel to the XZ ′ plane. It has become.

The metal pattern 123 includes a pair of excitation electrode portions 123a, a drawer portion 123b, and a wiring portion 123c, and is formed of a conductive material made of metal or the like. The pair of excitation electrode portions 123a are provided on both main surfaces of the flat plate portion 121a, for example. Two of the pair of drawer portions 123b are provided side by side on the lower surface of the fixing portion 121c. One end of the wiring portion 123c is connected to the excitation electrode portion 123a, and the other end is connected to the extraction portion 123b.

The crystal element 120 is housed in the recess of the substrate 110 with the main surface of the flat plate portion 121a facing the upper surface of the substrate portion 110a of the substrate 110. The drawer portion 123b is adhered to the mounting pad 111 provided on the substrate portion 110a of the substrate 110 by the conductive adhesive 140. As a result, the crystal element 120 is mounted on the substrate portion 110a of the substrate 110. Further, the pair of excitation electrode portions 123a are formed by the wiring portion 123c, the extraction portion 123b, and the conductive adhesive 140.
It is electrically connected to the mounting pad 111 provided on the base 110. As a result, it is electrically connected to any two of the mounting terminals 112 provided on the substrate portion 110a of the substrate 110.

The crystal device configured in this way is arranged, for example, with the lower surface of the substrate 110 facing the mounting surface of a circuit board (not shown), and the mounting terminal 112 is a mounting pad (not shown) of the circuit board by soldering or the like. It is mounted on the circuit board by being joined to. An oscillation circuit is configured on the circuit board, for example. The oscillation circuit applies an alternating voltage to the excitation electrode portion 123a via the mounting terminal 112, the mounting pad 111, the extraction portion 123b, and the wiring portion 123c to generate an oscillation signal. At this time, the oscillation circuit utilizes, for example, the fundamental wave vibration of the thickness slip vibration on the crystal piece 121.

(Composition of crystal element)
In this embodiment, the configuration of the crystal element will be described for each of the cases of Examples 1 to 3. FIG. 3 is a perspective view of the crystal element 120 of the first embodiment, and FIG. 5 is a plan view of the crystal element 120 of the first embodiment. FIG. 8 is a plan view of the crystal element 220 of the second embodiment. Further, FIG. 10 is a plan view of the crystal element 320 of the third embodiment.

In the present embodiment, when the crystal elements 120, 220, and 320 are mounted on the substrate 110, the surface that is substantially parallel to the upper surface of the substrate portion 110a of the substrate 110 is the main surface, and the crystal elements 120, 220.320 to the substrate. The direction of the 110 toward the substrate portion 110a will be described as downward, and the direction from the substrate portion 110a of the substrate 110 toward the crystal elements 120, 220, and 320 will be described as upward.

Further, in the present embodiment, when the crystal elements 120, 220, and 320 are mounted on the substrate 110, the surface substantially parallel to the upper surface of the substrate portion 110a facing the substrate portion 110a side of the substrate 110 is set as the lower surface, which is opposite to the substrate portion 110a. The surface substantially parallel to the upper surface of the substrate portion 110a facing the side is defined as the upper surface. Further, the upper surface and the lower surface are the main surfaces.

Therefore, for example, in the crystal element 120 of the first embodiment, the surface of the crystal element 120 facing the substrate portion 110a is the lower surface of the crystal element 120, and the surface of the flat plate portion 121a facing the substrate portion 110a is the lower surface of the flat plate portion 121a. The surface of the fixing portion 121c facing the substrate portion 110a is the lower surface of the fixing portion 121c. Further, the surface of the crystal element 120 facing the side opposite to the substrate portion 110a side becomes the upper surface of the crystal element 120, and the surface of the flat plate portion 121a facing the side opposite to the substrate portion 110a side becomes the upper surface of the flat plate portion 121a, and the surface of the flat plate portion 121a becomes the substrate portion 110a side. The surface of the fixing portion 121c facing the opposite side is the lower surface of the fixing portion 121c. Also,
The surface of the flat plate portion 121a in contact with the upper surface of the flat plate portion 121a and the lower surface of the flat plate portion 121a is the side surface of the flat plate portion 121a, and the surface of the fixing portion 121c in contact with the upper surface of the fixing portion 121c and the lower surface of the fixing portion 121c. Is the side surface of the fixed portion 121c.

Further, in the present embodiment, the crystal elements 120, 220, and 320 are arranged in the order of the flat plate portions 121a, 221a, 321a, the intermediate portions 121b, 221b, 321b, and the fixed portions 121c, 221c, and 321c in a plan view. However, the direction in which the flat plate portions 121a, 221a, 321a, the intermediate portions 121b, 221b, 321b, the fixed portions 121c, 221c, and 321c are lined up is the first direction, and the direction perpendicular to the first direction is the second direction. It is explained as. In the present embodiment, the first direction is parallel to the X axis, and the second direction is parallel to the Z'axis.

(Example 1)
FIG. 3 is a perspective view of the crystal element 120 of the first embodiment. FIG. 4A is a plan view of the upper surface of the crystal piece 121 used in the crystal element 120 of the first embodiment in a plan view, and FIG. 4B is a plan view of the crystal piece 121 used in the crystal element 120 of the first embodiment. It is a top view which viewed the lower surface from the upper surface side. FIG. 5A is a plan view of the upper surface of the crystal element 120 of the first embodiment in a plan view, and FIG. 5B is a plan view of the lower surface of the crystal element 120 of the first embodiment in a plan view from the upper surface side. Is. FIG. 6 is a partially enlarged view of a portion B of FIG.

The crystal element 120 is composed of a crystal piece 121 composed of a flat plate portion 121a, an intermediate portion 121b and a fixing portion 121c, and a metal pattern 123 composed of an excitation electrode portion 123a, a drawer portion 123b and a wiring portion 123c.

The crystal piece 121 includes a substantially rectangular parallelepiped flat plate portion 121a, a substantially rectangular parallelepiped fixed portion 121c which is thicker in the vertical direction than the flat plate portion 121a, and an intermediate portion 121b located between the flat plate portion 121a and the fixed portion 121c. , Is integrally composed of. At this time, the upper surface of the crystal piece 121 is substantially parallel to the upper surface of the substrate portion 110a of the substrate 110, and the surface of the flat plate portion 121a facing the opposite side of the substrate portion 110a and the side opposite to the substrate portion 110a. The surface of the intermediate portion 121b facing the surface and the surface of the fixing portion 121c facing the opposite side of the substrate portion 110a are located on the same plane.
Therefore, when viewed in cross section on the Y'X plane, the thickness of the intermediate portion 121b gradually increases in the vertical direction from the flat plate portion 121a to the fixed portion 121c. Further, the crystal piece 121 is formed with a through hole 122 penetrating in the vertical direction in the intermediate portion 121b.

The flat plate portion 121a is, for example, a substantially thin rectangular parallelepiped having a pair of main surfaces parallel to the XZ'plane, and the main surface is a substantially rectangular shape having a side parallel to the X axis and a side parallel to the Z'axis. .. The intermediate portion 121b is located along the side of the flat plate portion 121a parallel to the Z'axis and located on the −X axis side.

Further, a pair of excitation electrode portions 123a are provided on the main surface of the flat plate portion 121a, and when an alternating voltage is applied to the excitation electrode portion 123a, the plate portion 121a is sandwiched between the excitation electrode portions 123a due to the inverse piezoelectric effect and the piezoelectric effect. A part of the flat plate portion 121a vibrates. The vibration includes a thickness slip vibration which is a main vibration in which a portion sandwiched between the excitation electrode portions 123a vibrates in particular, and a contour vibration and a bending vibration which are secondary vibrations. The thickness sliding vibration, which is the main vibration, vibrates most in the portion sandwiched between the excitation electrode portions 123a, and also goes from the outer edge of the excitation electrode portion 123a to the outer edge of the flat plate portion 121a in the portion not sandwiched by the excitation electrode portion 123a. The vibration is propagating in the direction.
Contour vibration, which is one of the secondary vibrations, is a state in which the shape of the crystal piece 121, for example, in the flat plate portion 121a, the contour of the flat plate portion 121a is deformed and vibrates. Further, the bending vibration, which is one of the secondary vibrations, bends in the shape of the crystal piece 121, for example, in the flat plate portion 121a, in the direction parallel to the X axis of the flat plate portion 121a or in the direction parallel to the Z'axis. It is in a state of vibrating like this.

The intermediate portion 121b is provided along the side of the flat plate portion 121a located on the −X axis direction side of the two sides parallel to the Z ′ axis when the upper surface of the crystal piece 121 is viewed in a plan view. It is a substantially rectangular shape having a side parallel to the axis and a side parallel to the Z'axis. At this time, when the lower surface of the crystal piece 121 is viewed through the plane from the upper surface side, two of the four corners of the intermediate portion 121b facing the flat plate portion 121a have an arc shape. The center of this arc-shaped circle is located on the −X-axis side of the side where the flat plate portion 121a and the intermediate portion 121b are in contact with each other.

By doing so, the length parallel to the Z'axis at the edge of the flat plate portion 121a on the intermediate portion 121b side and the edge portion of the intermediate portion 121b on the flat plate portion 121a side can be partially changed. Further, even at the edge of the side parallel to the X axis, the length of the intermediate portion 121b parallel to the X axis and the length of the flat plate portion 121c parallel to the X axis can be partially changed. Therefore, the bending vibration and the contour vibration, which are secondary vibrations, depend on the length of the vibrating portion (for example, the length parallel to the X axis and the length parallel to the Z'axis), and thus the length. By partially changing
It is possible to partially change the vibration state of bending vibration and contour vibration, which are secondary vibrations. Therefore, it is possible to reduce the vibration state that is likely to be combined with the thickness slip vibration, which is the main vibration, among the bending vibration and the contour vibration, which are secondary vibrations. As a result, it becomes possible to reduce the influence of the bending vibration and the contour vibration, which are secondary vibrations, on the thickness slip vibration, which is the main vibration, and the vibration of the thickness slip vibration, which is the main vibration, is hindered and the equivalent series resistance value. Can be reduced.

Further, when the lower surface of the crystal piece 121 is viewed through the plane from the upper surface side in this way, the shape of the etching residual is complicated by forming the two corners of the intermediate portion 121b facing the flat plate portion 121a into an arc shape. Therefore, it is possible to surely form the metal pattern 123 at the edge portion between the intermediate portion 121b and the flat plate portion 121a. As a result, it is possible to reduce disconnection between the metal pattern 123 provided on the flat plate portion 121a and the metal pattern 123 provided on the intermediate portion 121b, and the equivalent series resistance value due to disconnection or the like increases. It is possible to reduce it.

Further, a through hole 122 penetrating in the vertical direction is formed in the intermediate portion 121b. By forming the through hole 122 in the intermediate portion 121b in this way, the length parallel to the X axis and the length parallel to the Z'axis in the intermediate portion 121b can be partially changed. As a result, it is possible to disperse the frequencies of bending vibration and contour vibration, which are secondary vibrations, and it is possible to reduce the influence of secondary vibrations on the thickness slip vibration, which is the main vibration, and equivalent series. It is possible to reduce the increase in resistance value.

Further, by forming the through hole 122 penetrating in the vertical direction in the intermediate portion 121b, it is possible to provide a part of the metal pattern 123 in the through hole 122. As a result, the conduction from the upper surface side of the crystal piece 121 to the lower surface side of the crystal piece 121 can be ensured, and it is possible to reduce the increase in the equivalent series resistance value due to the partial disconnection of the metal pattern 123. It becomes.

Further, the through hole 122 has a substantially rectangular opening in a plan view of the crystal piece 121, and its four corners have an arc shape. By forming the four corners of the opening in an arc shape in this way, even if the force is concentrated on the opening of the through hole 122, it can be dispersed. As a result, it is possible to reduce the concentration of force on the four corners of the opening 122 and damage from the four corners of the opening.

Further, by forming the four corners of the through hole 122 into an arc shape, the length parallel to the X axis and the length parallel to the Z'axis in the intermediate portion 121b can be partially changed. As described above, the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating part. Therefore, by doing so, the bending, which is a secondary vibration, is performed. The vibration state of vibration and contour vibration can be partially changed. As a result, it is possible to reduce the vibration state that is likely to be combined with the thickness slip vibration, which is the main vibration of the bending vibration and the contour vibration, which are secondary vibrations, and the thickness, which is the secondary vibration, is the main vibration. The influence on the sliding vibration can be reduced, and the increase in the equivalent series resistance value can be reduced.

Further, by forming the four corners of the through hole 122 into an arc shape, when forming the metal pattern 123 on the inner wall surface of the through hole 122, the metal is more reliably formed on the inner wall surface of the through hole 122 as compared with the case where the metal pattern 123 is not arcuate. It is possible to form the pattern 123. Therefore, the continuity between the upper surface of the crystal piece 121 and the lower surface of the crystal piece 121 in the metal pattern 123 can be reliably ensured, and the increase in the equivalent series resistance value due to disconnection or partial thinning is reduced. It becomes possible to make it.

The fixed portion 121c is a thin rectangular parallelepiped, and its vertical thickness is thicker than that of the flat plate portion 121a in the vertical direction. Further, the fixing portion 121c is provided along the side of the intermediate portion 121b located on the −X axis direction side of the two sides parallel to the Z ′ axis when the upper surface of the crystal piece 121 is viewed in a plan view. , A substantially rectangular shape having a side parallel to the X-axis and a side parallel to the Z'axis.
At this time, when the lower surface of the crystal piece 121 is viewed through the plane from the upper surface side, two of the four corners of the fixed portion 121c facing the intermediate portion 121b side have an arc shape. The center of this arc-shaped circle is located on the −X-axis side of the side where the intermediate portion 121b and the fixed portion 121c are in contact with each other.

By doing so, the length parallel to the Z'axis can be partially changed at the edge portion of the intermediate portion 121b on the fixed portion 121c side and the edge portion of the fixed portion 121c on the intermediate portion 121b side. Further, at the edge of the side parallel to the X axis, the length of the intermediate portion 121b parallel to the X axis and the length of the fixed portion 121c parallel to the X axis can be partially changed. As described above, the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating part. Therefore, by doing so, the bending, which is a secondary vibration, is performed. The vibration state of vibration and contour vibration can be partially changed. As a result, it is possible to reduce the vibration state that is likely to be combined with the thickness slip vibration, which is the main vibration, among the bending vibration and the contour vibration, which are secondary vibrations.
It is possible to reduce the influence of bending vibration and contour vibration, which are secondary vibrations, on the thickness slip vibration, which is the main vibration, and the vibration of the thickness slip vibration, which is the main vibration, is hindered and the equivalent series resistance value increases. It can be reduced.

Further, by forming the corner portion of the fixed portion 121c on the intermediate portion 121b side into an arc shape in this way, the shape of the etching residual can be complicated, so that the edge portion between the intermediate portion 121b and the fixed portion 121c can be formed. It is possible to reliably form the metal pattern 123. As a result, it is possible to reduce disconnection between the metal pattern 123 provided in the fixed portion 121c and the metal pattern 123 provided in the intermediate portion 121b, and the equivalent series resistance value due to disconnection or the like increases. It is possible to reduce it.

Further, the fixed portion 121c has notches formed in two corners of the four corners of the fixed portion 121c facing opposite to the intermediate portion 121b when the crystal piece 121 is viewed in a plan view.

By doing so, when the crystal piece 121 is viewed in a plan view, the length of the fixed portion 121c parallel to the Z'axis is different from the length on the intermediate portion 121b side and the length on the intermediate portion 121b and the opposite side. can do. As described above, the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating part. Therefore, by doing so, the bending, which is a secondary vibration, is performed. The vibration state of vibration and contour vibration can be partially changed. Therefore, it is possible to reduce the vibration state that is likely to be combined with the thickness slip vibration, which is the main vibration among the secondary vibrations, the bending vibration and the contour vibration, and the secondary vibrations, the bending vibration and the contour vibration. It is possible to reduce the influence on the thickness sliding vibration, which is the main vibration.
As a result, it is possible to reduce that the vibration of the thickness slip vibration, which is the main vibration, is hindered by the bending vibration and the contour vibration, which are secondary vibrations, and the equivalent series resistance value becomes large.

Further, when the crystal piece 121 is viewed in a plan view in this way, the number of side surfaces of the fixed portion 121c is increased by forming notches at two corners of the fixed portion 121c facing the opposite side to the intermediate portion 121b. be able to. Therefore, since the etching rate differs depending on the positional relationship with the crystal axis (X-axis, Y'axis, Z'axis), the side surface of the fixed portion 121c and the upper surface of the fixed portion 121c can be increased by increasing the number of side surfaces. The range of angles formed by the lower surface of the fixed portion 121c can be widened. Therefore, at the edge portion between the side surface of the fixed portion 121c and the upper surface of the fixed portion 121c or the lower surface of the fixed portion 121c, the angle formed by the side surface and the upper surface or the lower surface becomes steep, and the disconnection of the metal pattern 123 can be reduced. it can. As a result, it is possible to reduce the increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

Further, when the crystal piece 121 is viewed in a plan view in this way, the crystal piece 121 is formed in the shape of a crystal wafer by forming notches at two corners of the fixed portion 121c facing opposite to the intermediate portion 121b. In this case, the distance between the fixed portions 121c of the adjacent crystal pieces 121 can be increased as compared with the distance between the flat plate portions 121a of the adjacent crystal pieces 121. Therefore, it is possible to reduce the possibility that the adjacent crystal piece 121 becomes a shadow when the metal pattern 123 is provided on the side surface of the fixed portion 121c and the metal pattern 123 cannot be provided on the side surface of the fixed portion 121c. Therefore, by doing so, the metal pattern 123 can be reliably provided on the side surface of the fixed portion 121c, and it is possible to reduce the increase in the equivalent series resistance value due to the disconnection.

Further, at this time, when the crystal piece 121 is viewed in a plane, the notch is substantially rectangular, and the side of the notch located on the + X axis side of the sides parallel to the Z'axis has an arc shape. It has become.

By doing so, when the crystal piece 121 is viewed in a plan view, the length of the fixed portion 121c parallel to the Z'axis can be partially different. Further, the length of the fixed portion 121c parallel to the X axis can be partially different. As described above, the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating part. Therefore, by doing so, the bending, which is a secondary vibration, is performed. The vibration state of vibration and contour vibration can be partially changed. Therefore, it is possible to reduce the vibration state that is easily combined with the thickness slip vibration, which is the main vibration, among the bending vibration and the contour vibration, which are secondary vibrations, and the bending vibration and the contour vibration, which are secondary vibrations, can be reduced. It is possible to reduce the influence on the thickness sliding vibration, which is the main vibration.
As a result, it is possible to reduce that the vibration of the thickness slip vibration, which is the main vibration, is hindered by the bending vibration and the contour vibration, which are secondary vibrations, and the equivalent series resistance value becomes large.

Further, by forming the side of the notch into an arc shape in this way, the number of surfaces on the side surface of the fixed portion 121c in which the notch portion is formed can be increased. Therefore, since the etching rate differs depending on the positional relationship with the crystal axis (X-axis, Y'axis, Z'axis), the side surface of the fixed portion 121c and the upper surface of the fixed portion 121c can be increased by increasing the number of side surfaces. The range of angles formed by the lower surface of the fixed portion 121c can be widened. Therefore, at the edge portion between the side surface of the fixed portion 121c and the upper surface of the fixed portion 121c or the lower surface of the fixed portion 121c, the angle formed by the side surface and the upper surface or the lower surface becomes steep, and the disconnection of the metal pattern 123 can be reduced. it can. As a result, it is possible to reduce the increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

The metal pattern 123 provided on the crystal piece 121 is for applying a voltage from the outside of the crystal element 120. The metal pattern 123 may be a single layer, or a plurality of metal layers may be laminated. Although not particularly shown, the metal pattern 123 includes, for example, a first metal layer and a second metal layer laminated on the first metal layer. As the first metal layer, a metal having good adhesion to quartz is used, and for example, any one of nickel, chromium, nichrome or titanium is used. By using a metal having good adhesion to quartz for the first metal layer, a metal having difficulty in adhesion to quartz can be used for the second metal layer. For the second metal layer, a stable material with low electrical resistivity is used among the metal materials.
For example, any one of gold, an alloy containing gold, and silver or an alloy containing silver is used. By using a material having a relatively low electrical resistivity, the resistivity of the metal pattern 123 itself can be reduced, and as a result, it is possible to reduce the increase in the equivalent series resistance value of the crystal element 120. Further, by using a stable metal material, it is possible to reduce the change in the weight of the metal pattern 123 due to the reaction with the surrounding air in which the crystal element 120 is present and the change in the frequency of the crystal element 120.

The excitation electrode portion 123a is for applying a voltage to the flat plate portion 121a. The excitation electrode portions 123a are paired. Further, the excitation electrode portion 123a has a substantially rectangular shape with the crystal element 120 flat. In the excitation electrode portion 123a, when the crystal element 120 is viewed in a plan view, for example, the center of the excitation electrode portion 123a (specifically, the intersection of the diagonal lines of the excitation electrode portion 123a) is the center of the flat plate portion 121a (specifically, It is provided at a position distant from the intermediate portion 121b as compared with the intersection of the diagonal lines of the flat plate portion 121a). By doing so, when a voltage is applied to the excitation electrode portion 123a and a part of the flat plate portion 121a sandwiched between the excitation electrode portions 123a vibrates, the flat plate portion 121a is transferred from the portion sandwiched between the excitation electrode portions 123a. Even if the vibration propagates to the edge of the flat plate portion 121a and is reflected by the intermediate portion 121b, the vibration reflected by the intermediate portion 121b is sandwiched between the excitation electrode portions 123a. It is possible to reduce the amount of inhibition of the vibration. As a result, it is possible to reduce the increase in the equivalent series resistance value of the crystal element 120.

When the crystal element 120 is used as a crystal device, the drawer portion 123b is for mounting on the substrate 110, and is electrically operated by the mounting pad 111 provided on the upper surface of the substrate portion 110a of the substrate 110 and the conductive adhesive 140. Is glued. The drawer portions 123b are paired and are provided at positions facing the mounting pads 111 of the substrate portion 110a, and are provided side by side on the lower surface of the fixing portion 121 in a direction parallel to the Z'axis.

The wiring portion 123c is for electrically connecting the excitation electrode portion 123a and the extraction portion 123b, and is provided on the surface of the crystal piece 121.

When the side surface of the crystal element 120 parallel to the X-axis and the Y'axis is viewed, a part of the metal pattern 123 is provided on this surface. At this time, the metal pattern 123 is formed so as to straddle the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c of the crystal piece 121.

By doing so, by increasing the number of portions connected to the metal pattern 123 on the upper surface side of the crystal piece 121 and the metal pattern 123 on the lower surface side of the crystal piece 121, it is provided on the upper surface side of the crystal piece 121. It is possible to reliably conduct the metal pattern 123 and the metal pattern 123 on the lower surface side of the crystal piece 121. Therefore, it is possible to reduce the increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

Further, in this way, a part of the metal pattern 123 is provided on the side surface of the crystal piece 121 parallel to the X-axis and the Y'axis so as to straddle the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c. The metal pattern 123 acts as a weight, and bending vibration and contour vibration generated in the direction parallel to the Z'axis can be suppressed in the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c. As a result, the secondary bending vibration and contour vibration can be suppressed, so that the influence of the secondary bending vibration and contour vibration on the thickness sliding vibration, which is the main vibration, can be reduced. It is possible to reduce the increase in the equivalent series resistance value due to the bending vibration and the contour vibration which are secondary vibrations.

Further, when the lower surface of the crystal element 120 is viewed in a plane from the upper surface side, the metal pattern 123 provided on the flat plate portion 121a has a partially different length parallel to the Z'axis. In the present embodiment, for example, the length parallel to the Z'axis of the metal pattern 123 provided along the side of the flat plate portion 121a on the intermediate portion 121b side and the boundary portion between the excitation electrode portion 123a and the wiring portion 123c. The length of the wiring portion 123c parallel to the Z'axis is different.

By doing so, the length of the metal pattern 123 parallel to the Z'axis can be widened at the step between the flat plate portion 121a and the intermediate portion 121b, so that the step is formed between the flat plate portion 121a and the intermediate portion 121b. It is possible to reduce the disconnection due to the presence. Further, by making the length parallel to the Z'axis of the wiring portion 123c on the excitation electrode portion 123a side shorter than the length parallel to the Z'axis of the wiring portion 123c on the intermediate portion 121b side, the above-mentioned disconnection can be reduced. However, the provision of the wiring portion 123c reduces vibration inhibition due to the thickness sliding vibration, which is the main vibration.

Further, since a part of the metal pattern 123 is provided at the end of the flat plate portion 121a on the intermediate portion 121b side, bending vibration at the end portion of the flat plate portion 121a on the intermediate portion 121b side is reduced. It is possible to make it. As a result, it is possible to reduce the increase in the equivalent series resistance value due to the secondary bending vibration.

Of the metal patterns 123 provided on the flat plate portion 121a, the length parallel to the X-axis of a part of the metal pattern 123 whose length parallel to the Z'axis is partially long is the length of the flat plate portion 121a. It is 0.05 times or more and 0.1 times or less the length parallel to the X axis. When this length is less than 0.05 times the length parallel to the X axis of the flat plate portion 121a, the length of the metal pattern 123 parallel to the Z'axis at the step between the intermediate portion 121b and the flat plate portion 121a becomes There is a risk that the wire will be shortened, the wire will be partially broken, and the equivalent series resistance value will increase. If the length of the flat plate portion 121a is greater than 0.1 times the length parallel to the X axis,
The metal pattern 123 (part of the partially thick metal pattern 123) provided on the flat plate portion 121a on the intermediate portion 121a side becomes closer to the excitation electrode portion 123a, and the thickness sliding vibration, which is the main vibration, is hindered and equivalent series. There is a risk that the resistance value will increase. That is, the length parallel to the X-axis of the portion of the wiring portion 123c provided on the flat plate portion 121a whose length parallel to the Z'axis is partially thickened is parallel to the X-axis of the flat plate portion 121a. By setting the length to be 0.05 times or more and 0.1 times or less the length, it is possible to reduce the increase in the equivalent series resistance value.

Further, the length of the portion of the wiring portion 123c provided on the flat plate portion 121a whose length parallel to the Z'axis is partially long is set to the Z'axis of the metal pattern 123 provided on the intermediate portion 121b. It is substantially the same as the parallel length, and is substantially the same as the length parallel to the Z'axis of the metal pattern 123 provided on the fixed portion 121c. That is, when the lower surface of the crystal element 120 is viewed in a plane from the upper surface side, the metal pattern 123 is provided so as to straddle the fixed portion 121c, the intermediate portion 121b, and the flat plate portion 121a.

By doing so, it is possible to reduce the disconnection of the metal pattern 123 at the step between the fixed portion 121c and the intermediate portion 121b and the step between the intermediate portion 121b and the flat plate portion 121a. As a result, it is possible to reduce that a part of the metal pattern 123 is broken at each step and the transmission series resistance value becomes large.

Further, by doing so, the metal pattern 123 is provided at the ends of the intermediate portion 121b and the flat plate portion 121a on the intermediate portion 121b side, so that the metal pattern 123 acts as a weight, and the intermediate portion It is possible to reduce bending vibration and contour vibration, which are secondary vibrations, at the ends of the flat plate portion 121a on the side of the intermediate portion 121b and the intermediate portion 121b. As a result, it is possible to reduce that the bending vibration and the contour vibration, which are secondary vibrations, hinder the thickness slip vibration, which is the main vibration, and the thickness slip vibration, which is the main vibration, is hindered, so that the equivalent series resistance. It is possible to reduce the increase in the value.

As described above, when the lower surface of the crystal element 120 is viewed from the upper surface side in a plane, the metal pattern 123 has a length parallel to the Z'axis of the fixed portion 121c and a length parallel to the Z'axis of the intermediate portion 121b and a flat plate portion. The fixing portion 121c, the intermediate portion 121b, and the flat plate portion 121a are provided so as to have substantially the same length parallel to the Z'axis of 121a.

By doing so, it is possible to provide the metal pattern 123 on the upper surface side of the crystal piece 121 and the lower surface side of the crystal piece 121. Therefore, it is possible to reduce the disconnection between the metal pattern 123 provided on the upper surface side of the crystal piece 121 and the metal pattern 123 provided on the lower surface side of the crystal piece 121. As a result, it is possible to reduce the increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

Further, by providing the metal pattern 123 on the inner wall surface of the through hole 122 in this way, the metal pattern 123 provided on the inner wall surface acts as a weight, and the bending vibration and the contour vibration which are secondary vibrations are generated. It is possible to reduce it. As a result, it is possible to reduce that the bending vibration and the contour vibration, which are secondary vibrations, hinder the thickness slip vibration, which is the main vibration, and the equivalent series resistance due to the inhibition of the thickness slip vibration, which is the main vibration. It is possible to reduce the increase in the value.

From another viewpoint, when the lower surface of the crystal element 120 is viewed in a plane from the upper surface side, the shortest distance from the opening of the through hole 122 to the side parallel to the X axis of the adjacent crystal piece 121 is provided in the intermediate portion 121b. It can be said that the length of the metal pattern 123 is shorter than the length parallel to the Z'axis. At this time, the difference between the length parallel to the Z'axis of the metal pattern 123 provided in the intermediate portion 121b and the shortest distance from the opening of the through hole 122 to the side parallel to the X axis of the adjacent crystal piece 121 is , The length of the opening of the through hole 122 parallel to the Z'axis is 0.1 times or more and 0.4 times or less. When this difference is less than 0.1 times the length of the opening of the through hole 122 parallel to the Z'axis.
Since the four corners of the through hole 122 have an arc shape, they are provided only in places where the shape is complicated, and there is a risk that the metal pattern 123 provided on the inner wall surface will be disconnected. If the difference is larger than 0.4 times, the distance from the adjacent metal pattern 123 becomes short, so that there is a risk of short-circuiting with the adjacent metal pattern 123. Therefore, the length parallel to the Z'axis of the metal pattern 123 provided on the inner wall surface of the through hole 122 is 0.1 times or more and 0 times the length parallel to the Z'axis of the opening of the through hole 122. By setting the value to 4 times or less, the short circuit with the adjacent metal pattern 123 is reduced while reducing the disconnection on the inner wall surface of the through hole 122.

Such a crystal element 120 is formed between a substantially rectangular flat plate portion 121a, a substantially rectangular fixed portion 121c having a thickness in the vertical direction thicker than the flat plate portion 121a, and the flat plate portion 121a and the fixing portion 121c. A crystal piece 121 composed of an intermediate portion 121b which is located and whose thickness gradually increases in the vertical direction from the flat plate portion 121a to the fixed portion 121c, and an excitation electrode portion 123a provided on both main surfaces of the flat plate portion 121a are fixed. A metal pattern 123 including a drawer portion 123b provided on the lower surface of the portion 121c, and a wiring portion 123c having one end connected to the excitation electrode portion 123a and the other end connected to the drawer portion 123b.
The crystal element 120 is provided with a through hole 122 penetrating in the vertical direction in the intermediate portion 121b, and a part of the metal pattern 123 is formed on the side surface of the crystal piece 121 and the intermediate portion 121b. It is provided on the inner wall surface of the through hole 122 ,
When the lower surface of the crystal piece is viewed in a plane, the upper surface of the flat plate portion and the upper surface of the fixed portion are located on the same plane, and the corner portion of the intermediate portion facing the flat plate portion side has an arc shape .

From another point of view, when the side surface of the crystal element 120 parallel to the X-axis and the Y'axis is viewed, a part of the metal pattern 123 is provided on this surface. At this time, it can be said that the metal pattern 123 is formed so as to straddle the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c of the crystal piece 121.

By doing so, by increasing the number of portions connected to the metal pattern 123 on the upper surface side of the crystal piece 121 and the metal pattern 123 on the lower surface side of the crystal piece 121, it is provided on the upper surface side of the crystal piece 121. It is possible to reliably conduct the metal pattern 123 and the metal pattern 123 on the lower surface side of the crystal piece 121. Therefore, it is possible to reduce the increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

Further, in this way, a part of the metal pattern 123 is provided on the side surface of the crystal piece 121 parallel to the X-axis and the Y'axis so as to straddle the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c. The metal pattern 123 acts as a weight, and bending vibration and contour vibration generated in the direction parallel to the Z'axis can be suppressed in the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c. As a result, the secondary bending vibration and contour vibration can be suppressed, so that the influence of the secondary bending vibration and contour vibration on the thickness slip vibration, which is the main vibration, can be reduced. ,
It is possible to reduce the increase in the equivalent series resistance value due to the bending vibration and the contour vibration which are secondary vibrations.

Further, in such a crystal element 120, when the lower surface of the crystal piece 121 is viewed in a plane, the upper surface of the flat plate portion 121a and the upper surface of the fixing portion 121c are located on the same plane, and the intermediate surface faces the flat plate portion 121a. The corners of the portion 121b have an arc shape.

By doing so, the length parallel to the Z'axis at the edge of the flat plate portion 121a on the intermediate portion 121b side and the edge portion of the intermediate portion 121b on the flat plate portion 121a side can be partially changed. Further, even at the edge of the side parallel to the X axis, the length of the intermediate portion 121b parallel to the X axis and the length of the flat plate portion 121c parallel to the X axis can be partially changed. Therefore, the bending vibration and the contour vibration, which are secondary vibrations, depend on the length of the vibrating portion (for example, the length parallel to the X axis and the length parallel to the Z'axis), and thus the length. By partially changing, the vibration states of the bending vibration and the contour vibration, which are secondary vibrations, can be partially changed.
As a result, it is possible to reduce the vibration state that is easily combined with the thickness slip vibration, which is the main vibration, among the bending vibration and contour vibration, which are secondary vibrations, and the bending vibration and contour vibration, which are secondary vibrations, can be reduced. It is possible to reduce the influence on the thickness sliding vibration which is the main vibration, and it is possible to reduce that the vibration of the thickness sliding vibration which is the main vibration is hindered and the equivalent series resistance value becomes large.

Further, when the lower surface of the crystal piece 121 is viewed through the plane from the upper surface side in this way, the shape of the etching residual is complicated by forming the two corners of the intermediate portion 121b facing the flat plate portion 121a into an arc shape. Therefore, it is possible to surely form the metal pattern 123 at the edge portion between the intermediate portion 121b and the flat plate portion 121a. As a result, it is possible to reduce disconnection between the metal pattern 123 provided on the flat plate portion 121a and the metal pattern 123 provided on the intermediate portion 121b, and the equivalent series resistance value due to disconnection or the like increases. It is possible to reduce it.

Further, in such a crystal element 120, when the crystal piece 121 is viewed in a plane, the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121b are fixed in a state where the upper surface of the flat plate portion 121a and the upper surface of the fixing portion 121b are located on the same plane. The portions 121c are arranged side by side in this order, and a notch is formed in the fixed portion 121c facing the opposite side to the flat plate portion 121a.

From another viewpoint, it is located between the substantially rectangular flat plate portion 121a, the substantially rectangular fixed portion 121c which is thicker in the vertical direction than the flat plate portion 121a, and the flat plate portion 121a and the fixing portion 121c. , A crystal piece 121 composed of an intermediate portion 121b whose thickness gradually increases in the vertical direction from the flat plate portion 121a to the fixed portion 121c, and provided on the lower surfaces of the excitation electrode portion 123a and the fixed portion 121c provided on the flat plate portion 121a. The drawer portion 123b, and the wiring portion 123c, one end of which is connected to the excitation electrode portion 123a and the other end of which is connected to the drawer portion 123b.
A crystal element 120 having a metal pattern 123 composed of a metal pattern 123, wherein the fixed portion 121c, the intermediate portion 121b, and the flat plate portion 121a are arranged in this order in the first direction (in the plan view of the crystal element 120). When the direction perpendicular to the first direction (X-axis direction) is the second direction (Z'axis direction), the length of the intermediate portion 121b in the second direction (Z'axis direction) is It can be said that the length of the fixed portion 121c is longer than the length in the second direction (Z'axis direction).

By doing so, when the crystal piece 121 is viewed in a plan view, the length of the fixed portion 121c parallel to the Z'axis is different from the length on the intermediate portion 121b side and the length on the intermediate portion 121b and the opposite side. can do. As described above, the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating part. Therefore, by doing so, the bending, which is a secondary vibration, is performed. The vibration state of vibration and contour vibration can be partially changed. Therefore, it is possible to reduce the vibration state that is easily combined with the thickness slip vibration, which is the main vibration, among the bending vibration and the contour vibration, which are secondary vibrations, and the bending vibration and the contour vibration, which are secondary vibrations, can be reduced. It is possible to reduce the influence on the thickness sliding vibration, which is the main vibration. As a result, it is possible to reduce that the vibration of the thickness slip vibration, which is the main vibration, is hindered by the bending vibration and the contour vibration, which are secondary vibrations, and the equivalent series resistance value becomes large.

Further, when the crystal piece 121 is viewed in a plan view in this way, the number of side surfaces of the fixed portion 121c is increased by forming notches at two corners of the fixed portion 121c facing the opposite side to the intermediate portion 121b. be able to. Therefore, since the etching rate differs depending on the positional relationship with the crystal axis (X-axis, Y'axis, Z'axis), the side surface of the fixed portion 121c and the upper surface of the fixed portion 121c can be increased by increasing the number of side surfaces. The range of angles formed by the lower surface of the fixed portion 121c can be widened. Therefore, at the edge portion between the side surface of the fixed portion 121c and the upper surface of the fixed portion 121c or the lower surface of the fixed portion 121c, the angle formed by the side surface and the upper surface or the lower surface becomes steep, and the disconnection of the metal pattern 123 can be reduced. it can. As a result, it is possible to reduce the increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

Further, when the crystal piece 121 is viewed in a plan view in this way, the crystal piece 121 is formed in the shape of a crystal wafer by forming notches at two corners of the fixed portion 121c facing opposite to the intermediate portion 121b. In this case, the distance between the fixed portions 121c of the adjacent crystal pieces 121 can be increased as compared with the distance between the flat plate portions 121a of the adjacent crystal pieces 121. Therefore, it is possible to reduce the possibility that the adjacent crystal piece 121 becomes a shadow when the metal pattern 123 is provided on the side surface of the fixed portion 121c and the metal pattern 123 cannot be provided on the side surface of the fixed portion 121c.
Therefore, by doing so, the metal pattern 123 can be reliably provided on the side surface of the fixed portion 121c, and it is possible to reduce the increase in the equivalent series resistance value due to the disconnection.

Further, in such a crystal element 120, when the crystal element 120 is viewed in a plan view, the length of the fixed portion 121c in the second direction (Z'axis direction) is set at the edge of the fixed portion 121c on the intermediate portion 121b side. It is long and has a shape like R chamfered.

By doing so, when the crystal piece 121 is viewed in a plan view, the length of the fixed portion 121c parallel to the Z'axis can be partially different. Further, the length of the fixed portion 121c parallel to the X axis can be partially different. As described above, the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating part. Therefore, by doing so, the bending, which is a secondary vibration, is performed. The vibration state of vibration and contour vibration can be partially changed. For this reason, it is possible to reduce the vibration state that is likely to be combined with the thickness slip vibration, which is the main vibration among the secondary vibrations such as bending vibration and contour vibration.
It is possible to reduce the influence of the bending vibration and the contour vibration, which are secondary vibrations, on the thickness slip vibration, which is the main vibration. As a result, it is possible to reduce that the vibration of the thickness slip vibration, which is the main vibration, is hindered by the bending vibration and the contour vibration, which are secondary vibrations, and the equivalent series resistance value becomes large.

Further, by forming the side of the notch into an arc shape in this way, the number of surfaces on the side surface of the fixed portion 121c in which the notch portion is formed can be increased. Therefore, since the etching rate differs depending on the positional relationship with the crystal axis (X-axis, Y'axis, Z'axis), the side surface of the fixed portion 121c and the upper surface of the fixed portion 121c can be increased by increasing the number of side surfaces. The range of angles formed by the lower surface of the fixed portion 121c can be widened. Therefore, at the edge portion between the side surface of the fixed portion 121c and the upper surface of the fixed portion 121c or the lower surface of the fixed portion 121c, the angle formed by the side surface and the upper surface or the lower surface becomes steep, and the disconnection of the metal pattern 123 can be reduced. it can.
As a result, it is possible to reduce the increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

Further, in such a crystal element 120, a through hole 122 penetrating in the vertical direction is formed in the intermediate portion 121b.

By forming the through hole 122 in the intermediate portion 121b in this way, the length parallel to the X axis and the length parallel to the Z'axis in the intermediate portion 121b can be partially changed. As described above, the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating part. Therefore, by doing so, the bending, which is a secondary vibration, is performed. The vibration state of vibration and contour vibration can be partially changed. As a result, it is possible to reduce the vibration state that is likely to be combined with the thickness slip vibration, which is the main vibration of the bending vibration and the contour vibration, which are secondary vibrations, and the thickness, which is the secondary vibration, is the main vibration. The influence on the sliding vibration can be reduced, and the increase in the equivalent series resistance value can be reduced.

Further, by forming the through hole 122 penetrating in the vertical direction in the intermediate portion 121b, it is possible to provide a part of the metal pattern 123 in the through hole 122. As a result, the conduction from the upper surface side of the crystal piece 121 to the lower surface side of the crystal piece 121 can be ensured, and it is possible to reduce the increase in the equivalent series resistance value due to the partial disconnection of the metal pattern 123. It becomes.

Further, in such a crystal element 120, a part of the metal pattern 123 is provided on the inner wall surface of the through hole 122.

By doing so, it is possible to provide the metal pattern 123 on the upper surface side of the crystal piece 121 and the lower surface side of the crystal piece 121. Therefore, it is possible to reduce the disconnection between the metal pattern 123 provided on the upper surface side of the crystal piece 121 and the metal pattern 123 provided on the lower surface side of the crystal piece 121. As a result, it is possible to reduce the increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

Further, by providing the metal pattern 123 on the inner wall surface of the through hole 122 in this way, the metal pattern 123 provided on the inner wall surface acts as a weight, and the bending vibration and the contour vibration which are secondary vibrations are generated. It is possible to reduce it. As a result, it is possible to reduce that the bending vibration and the contour vibration, which are secondary vibrations, hinder the thickness slip vibration, which is the main vibration, and the equivalent series resistance due to the inhibition of the thickness slip vibration, which is the main vibration. It is possible to reduce the increase in the value.

Further, in such a crystal element 120, when the side surface (parallel to the X-axis and the Y'axis) of the crystal element 120 is viewed in a plan view, a part of the metal pattern 123 is a flat plate portion 121a and an intermediate portion as described above. It is provided so as to straddle the 121b and the fixed portion 121c. That is, it can be said that a part of the metal pattern 123 is provided on the side surface of the fixed portion 121c and the side surface of the intermediate portion 121b.

Therefore, by providing a part of the metal pattern 123 on the side surface (parallel to the X-axis and Y'axis) of the fixed portion 121c and the side surface (parallel to the X-axis and Y'axis) of the intermediate portion 121b in this way. The metal pattern 123 acts as a weight, and bending vibration and contour vibration generated in the direction parallel to the Z'axis can be suppressed in the fixed portion 121c and the intermediate portion 121b. As a result, it is possible to reduce the influence of bending vibration and contour vibration, which are secondary vibrations, on the thickness sliding vibration, which is the main vibration, and equivalent series by bending vibration and contour vibration, which are secondary vibrations. It is possible to reduce the increase in resistance value.

(Example 2)
Next, the crystal element 220 according to the second embodiment of the present embodiment will be described. Of the crystal element 220 in the second embodiment of the present embodiment, the same parts as the above-mentioned crystal element 220 will be appropriately described with the same reference numerals. FIG. 7A is a plan view of the upper surface of the crystal piece 221 used in the crystal element 220 of the second embodiment in a plan view, and FIG. 7B is a plan view of the crystal piece 221 used in the crystal element 220 of the second embodiment. It is a top view which viewed the lower surface from the upper surface side. FIG. 8 (a) is a plan view of the upper surface of the crystal element 220 of the second embodiment in a plan view, and FIG. 8 (b) is a plan view of the lower surface of the crystal element 220 of the second embodiment in a plan view from the upper surface side. Is.

In the crystal element 220 according to the second embodiment of the present embodiment, the length of the intermediate portion 221b parallel to the Z'axis is compared with the length of the fixed portion 221c parallel to the Z'axis in a plan view of the crystal element 220. It differs from Example 1 in that it is shortened.

The crystal element 220 according to the second embodiment is composed of a crystal piece 221 having a cantilever shape when viewed in cross section, and a metal pattern 223 provided on the crystal piece 221.

The crystal piece 221 is located between the substantially rectangular parallelepiped flat plate portion 221a, the substantially rectangular parallelepiped fixed portion 221c which is thicker in the vertical direction than the flat plate portion 221a, and the flat plate portion 221a and the fixed portion 221c. It is composed of an intermediate portion 221b whose thickness in the vertical direction gradually increases from 221a to the fixed portion 221c. Further, a through hole 222 penetrating in the vertical direction is formed in the intermediate portion 221b of the crystal piece 221.

Here, when the crystal piece 221 is viewed in a plan view, the direction in which the fixed portion 221c, the intermediate portion 221b, and the flat plate portion 221a of the crystal piece 221 are arranged is the first direction, and the direction orthogonal to the first direction is the second direction. And. The first direction is parallel to the X axis of the crystal, and the second direction is parallel to the Z'axis.

When the lower surface of the crystal piece 121 is viewed through the plane from the upper surface side, the length of the intermediate portion 221b in the direction perpendicular to the X axis is substantially the same as the length of the flat plate portion 221a in the direction perpendicular to the X axis. It is shorter than the length of the fixed portion 221c in the direction perpendicular to the axis.

By doing so, the vibration states of the bending vibration and the contour vibration, which are secondary vibrations generated in the direction parallel to the Z'axis, can be made different between the intermediate portion 221b and the fixed portion 221c. Of the secondary vibrations, bending vibration and contour vibration, it is possible to reduce the vibration state that easily combines with the thickness sliding vibration, which is the main vibration, and the bending vibration, which is a secondary vibration, is mainly contour vibration. It is possible to reduce the influence on the thickness slip vibration, which is vibration. As a result, it is possible to reduce that the vibration of the thickness slip vibration, which is the main vibration, is hindered by the bending vibration and the contour vibration, which are secondary vibrations, and the equivalent series resistance value becomes large.

Further, by doing so, when the crystal piece 221 is viewed in a plan view, the number of side surfaces at the boundary between the fixed portion 221c and the intermediate portion 221b can be increased. Therefore, since the etching rate differs depending on the positional relationship with the crystal axis (X-axis, Y'axis, Z'axis), the side surface of the fixed portion 221c and the upper surface of the fixed portion 221c can be increased by increasing the number of side surfaces. The range of angles formed by the lower surface of the fixed portion 221c can be widened. Therefore, at the edge between the side surface of the fixed portion 221c and the upper surface of the fixed portion 221c or the lower surface of the fixed portion 221c, the angle formed by the side surface and the upper surface or the lower surface becomes steep, and the disconnection of the metal pattern 223 can be reduced. it can. As a result, it is possible to reduce the increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

Further, by doing so, when the crystal piece 221 is formed in the shape of a crystal wafer, the distance between the fixed portions 121c of the adjacent crystal pieces 221 is compared with the distance between the flat plate portions 221a of the adjacent crystal pieces 221. The distance can be increased. Therefore, it is possible to reduce that the adjacent crystal piece 221 becomes a shadow when the metal pattern 223 is provided on the side surface of the fixed portion 221c, and the metal pattern 223 cannot be provided on the side surface of the fixed portion 221c. Therefore, by doing so, the metal pattern 223 can be reliably provided on the side surface of the fixed portion 221c, and it is possible to reduce the increase in the equivalent series resistance value due to the disconnection.

Therefore, such a crystal element 220 is arranged in the order of the flat plate portion 221a, the intermediate portion 221b, and the fixed portion 221c in a state where the upper surface of the flat plate portion 221a and the upper surface of the fixed portion 221c are located on the same plane. The length of the intermediate portion 221b is longer than the length of the fixed portion 221c in the direction perpendicular to the direction in which the flat plate portion 221a, the intermediate portion 221b, and the fixed portion 221c are arranged in a plan view of the crystal piece 221. It has become. Therefore, it is possible to reduce the increase in the equivalent series resistance value as described above.

(Example 3)
The crystal element 320 according to the third embodiment of the present embodiment will be described. Of the crystal element 320 in the embodiment of the present embodiment, the same parts as the above-mentioned crystal element 220 will be appropriately described with the same reference numerals. FIG. 9A is a plan view of the upper surface of the crystal piece 321 used in the crystal element 320 of the third embodiment in a plan view, and FIG. 9B is a plan view of the crystal piece 321 used in the crystal element 320 of the third embodiment. It is a top view which viewed the lower surface from the upper surface side. FIG. 10A is a plan view of the upper surface of the crystal element 320 of the third embodiment, and FIG. 10B is a plan view of the lower surface of the crystal element 320 of the third embodiment viewed from the upper surface side.

In the crystal element 320 according to the third embodiment of the present embodiment, when the crystal element 320 is viewed in a plan view, the length of the intermediate portion 321b parallel to the Z'axis parallel to the Z'axis is fixed to be parallel to the Z'axis. It differs from the second embodiment in that it is shorter than the length of the portion 212c and shorter than the length of the flat plate portion 321a parallel to the Z'axis.

The crystal element 320 according to the third embodiment is composed of a crystal piece 321 having a cantilever shape when viewed in cross section, and a metal pattern 323 provided on the crystal piece 321.

The crystal piece 321 is located between the substantially rectangular parallelepiped flat plate portion 321a, the substantially rectangular parallelepiped fixed portion 321c which is thicker in the vertical direction than the flat plate portion 321a, and the flat plate portion 321a and the fixing portion 321c. It is composed of an intermediate portion 321b whose thickness in the vertical direction gradually increases from the to the fixed portion 321c. Further, a through hole 322 penetrating in the vertical direction is formed in the intermediate portion 321b of the crystal piece 321.

Here, when the crystal piece 321 is viewed in a plan view, the direction in which the fixed portion 321c, the intermediate portion 321b, and the flat plate portion 321a of the crystal piece 321 are arranged is the first direction, and the direction orthogonal to the first direction is the second direction. And. The first direction is parallel to the X axis of the crystal, and the second direction is parallel to the Z'axis.

When the lower surface of the crystal piece 321 is viewed through the plane from the upper surface side, the length of the intermediate portion 321b parallel to the Z'axis is shorter than the length of the flat plate portion 321a parallel to the Z'axis, and the fixed portion 321c. It is shorter than the length parallel to the Z'axis of.

By doing so, the vibration states of the bending vibration and the contour vibration, which are secondary vibrations generated in the direction parallel to the Z'axis, are made different in the flat plate portion 321a, the intermediate portion 321b, and the fixed portion 321c. Can be done. Further, by making the length of the intermediate portion 321b parallel to the Z'axis longer than the length of the flat plate portion 321a parallel to the Z'axis, it is possible to prevent the flat plate portion 321a from bending parallel to the Z'axis. It becomes possible to make it. Therefore, by doing so, it is possible to suppress bending vibration and contour vibration, which are secondary vibrations generated in the flat plate portion 321a, and as a result, the auxiliary shaft is added to the thickness sliding vibration, which is the main vibration in the flat plate portion 321a. It is possible to reduce the inhibition of bending vibration and contour vibration, which are typical vibrations, and to reduce the increase in equivalent series resistance value due to the inhibition of thickness sliding vibration, which is the main vibration.

Further, by doing so, when the crystal piece 321 is viewed in a plan view, the number of side surfaces of the crystal piece 321 can be increased. Therefore, since the etching rate differs depending on the positional relationship with the crystal axis (X-axis, Y'axis, Z'axis), the side surface of the fixed portion 321c and the main surface of the fixed portion 321c can be increased by increasing the number of side surfaces. The range of the angle formed by the etching, the angle formed by the side surface of the intermediate portion 321b and the upper surface of the intermediate portion 321b, or the angle formed by the side surface of the flat plate portion 321a and the main surface of the flat plate portion 321a can be widened. Therefore, the angle formed by the main surface of the crystal piece 321 and the side surface of the crystal piece 321 becomes steep, and it is possible to reduce the disconnection of the metal pattern 323, and it is possible to reduce the increase in the equivalent series resistance value due to the disconnection. Is possible.

Further, by doing so, when the crystal piece 321 is formed in the shape of a crystal wafer, the distance between the flat plate portions 321a of the adjacent crystal pieces 321 and the distance between the fixed portions 321c of the adjacent crystal pieces 321 can be set. , It can be longer than the distance between the intermediate portions 321b of the adjacent crystal pieces 321. Therefore, the metal pattern 323 can be reliably formed on the side surface of the fixed portion 321c and the side surface of the flat plate portion 321a, and it is possible to reduce an increase in the equivalent series resistance value due to disconnection.

Therefore, in such a crystal element 320, the length of the intermediate portion 321b is set in a direction perpendicular to the direction in which the flat plate portion 321a, the intermediate portion 321b, and the fixed portion 321c are arranged in a plan view of the crystal piece 321. It is longer than the length of the flat plate portion 321a. In other words, in the crystal element 320 according to the third embodiment, the length of the intermediate portion 321b in the second direction (Z'axis direction) is longer than the length of the flat plate portion 321a in the second direction (Z'axis direction). ing. Therefore, it is possible to reduce the increase in the equivalent series resistance value as described above.

By using the crystal elements as shown in Examples 1 to 3 in the crystal device in this way, it is possible to obtain a crystal device in which the increase in the equivalent series resistance value is reduced.

(Manufacturing method of crystal element)
A method for manufacturing a crystal element will be described. In this embodiment, the case of manufacturing the crystal element 120 shown in the first embodiment will be described. FIG. 11 is a flow chart showing a flow in the case of manufacturing the crystal element 120 shown in the first embodiment.

The method for manufacturing a crystal element includes a crystal wafer preparation step, a crystal wafer etching step, a metal pattern forming step, and an individualization step.

The crystal wafer preparation step is a step of preparing a crystal wafer having the same thickness in the vertical direction as the fixing portion 121c of the crystal element 120. The crystal wafer has a crystal axis including an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other, and the thickness in the vertical direction thereof is the same as the thickness in the vertical direction of the fixed portion 121c.

The crystal wafer etching step is a step of etching a crystal wafer so as to form a portion to be a crystal piece 121 by using a photolithography technique and an etching technique. In the crystal wafer etching step, first, corrosion-resistant metal films are formed on both main surfaces of the crystal wafer, and a photosensitive resist is applied onto the corrosion-resistant metal films. Next, the crystal wafer coated with this photosensitive resist is developed and exposed in a predetermined pattern to expose a part of the corrosion-resistant metal film. Then, the exposed corrosion-resistant metal film is peeled off to expose a part of the crystal wafer. At this time, for example, when one main surface of the crystal wafer is viewed in a plane, the upper surface portion of the crystal piece 121 is not exposed, and when the other main surface of the crystal wafer is viewed in a plane, for example,
The crystal wafer is exposed in the vibrating portion 121a and the intermediate portion 121b. Then, the portion to be the flat plate portion 121a is etched until it has a predetermined thickness, and the photosensitive resist and the corrosion-resistant metal film are peeled off.

The metal pattern forming step is a step of forming a predetermined metal pattern 123 on the portion to be the formed crystal piece 121. In the metal pattern forming step, for example, photolithography technology and etching technology are used. When the photolithography technique and the etching technique are used, a metal film having a metal pattern 123 is formed on both main surfaces of a crystal wafer in which a plurality of portions to be crystal pieces 121 are formed. At this time, for the metal film, for example, a vapor deposition technique or a sputtering technique is used. After that, a photosensitive resist is applied onto the metal film, developed and exposed, and a part of the metal film is exposed. By peeling off the exposed metal film and peeling off the photosensitive resist, a predetermined metal pattern 123 is provided on the portion to be the crystal piece 121. As another example, in the metal pattern forming step, a sputtering technique or a vapor deposition technique is used.

That is, in the metal pattern forming step, the crystal piece is adhered to a predetermined position by a sputtering technique or a vapor deposition technique. When the crystal elements described in Examples 1 to 3 are manufactured, the metal pattern 123 can be reliably formed on the side surface portion of the crystal piece 121, and the productivity can be improved.

The individualization step is a step of individualizing the portion to be the crystal piece 121.

Therefore, the method for manufacturing a crystal element according to the present embodiment uses a crystal wafer preparation step of preparing a crystal wafer having the same vertical thickness as the fixed portion 121c, and a photolithographie technique and an etching technique to form a crystal piece 121. A crystal wafer etching step of etching a crystal wafer so as to form a portion to be formed, a metal pattern forming step of forming a predetermined metal pattern 123 on a portion to be a formed crystal piece 121, and a portion to be a crystal piece 121. It includes an individualization step of disintegrating.

By doing so, in the case of manufacturing the crystal element according to the first to third embodiments, the metal pattern 123 can be surely formed on the side surface of the crystal piece 121. Therefore, by manufacturing the crystal elements according to Examples 1 to 3, it is possible to reduce the disconnection on the side surface of the crystal piece 121 as compared with the case of manufacturing the conventional crystal element, and the productivity can be reduced. Can be improved.

The present invention is not limited to the above embodiments, and may be implemented in various forms.

The device having a crystal element is not limited to the crystal unit. For example, in addition to the crystal element, an oscillator having an integrated circuit element that applies a voltage to the crystal element to generate an oscillation signal may be used. Further, for example, the crystal device may be provided with a constant temperature bath. For example, the substrate may have an H-shaped cross section having recesses on the upper surface and the lower surface, or may have a flat plate shape.

The shape and dimensions of the crystal element are not limited to those exemplified in the embodiments, and may be appropriately set. The shape of the excitation electrode portion is not limited to a substantially rectangular shape in a plan view, and may be, for example, an elliptical shape.

110 ... Base 110a ... Board part 110b ... Frame part 111 ... Mounting pad 112 ... Mounting terminals 120, 220, 320 ... Crystal elements 121, 221 and 321 ... Crystal pieces 121a , 221a, 321a ... Flat plate portion 121b, 221b, 321b ... Intermediate portion 121c, 221c, 321c ... Fixed portion 122, 222, 322 ... Through hole 123, 223, 323 ... Metal pattern 123a , 223a, 323a ... Excitation electrode part 123b, 223b, 323b ... Drawer part 131c, 223c, 323c ... Wiring part

Claims (7)

A substantially rectangular parallelepiped flat plate portion, a substantially rectangular parallelepiped fixed portion having a thickness in the vertical direction thicker than the flat plate portion, and a substantially rectangular parallelepiped fixed portion located between the flat plate portion and the fixed portion, and the flat plate portion to the fixed portion. A crystal piece consisting of an intermediate part whose thickness in the vertical direction gradually increases toward
Excitation electrode portions provided on both main surfaces of the flat plate portion, a drawer portion provided on the lower surface of the fixing portion, and one end connected to the excitation electrode portion and the other end connected to the drawer portion. A metal pattern consisting of the wiring part and
It is a crystal element equipped with
A through hole penetrating in the vertical direction is formed in the intermediate portion.
A part of the metal pattern is provided on the side surface of the crystal piece and the inner wall surface of the through hole formed in the intermediate portion .
When the lower surface of the crystal piece is viewed in a plane,
The upper surface of the flat plate portion and the upper surface of the fixed portion are located on the same plane.
A crystal element characterized in that the corner portion of the intermediate portion facing the flat plate portion side has an arc shape . A substantially rectangular parallelepiped flat plate portion, a substantially rectangular parallelepiped fixed portion having a thickness in the vertical direction thicker than the flat plate portion, and a substantially rectangular parallelepiped fixed portion located between the flat plate portion and the fixed portion, and the flat plate portion to the fixed portion. A crystal piece consisting of an intermediate part whose thickness in the vertical direction gradually increases toward
Excitation electrode portions provided on both main surfaces of the flat plate portion, a drawer portion provided on the lower surface of the fixing portion, and one end connected to the excitation electrode portion and the other end connected to the drawer portion. A metal pattern consisting of the wiring part and
It is a crystal element equipped with
A through hole penetrating in the vertical direction is formed in the intermediate portion.
A part of the metal pattern is provided on the side surface of the crystal piece and the inner wall surface of the through hole formed in the intermediate portion.
When the crystal piece is viewed in a plane,
The upper surface of the flat plate portion and the upper surface of the fixed portion are located on the same plane, and the flat plate portion, the intermediate portion, and the fixed portion are arranged side by side in this order.
A crystal element characterized in that notches are formed at two corners of the four corners of the fixed portion facing opposite to the intermediate portion. The crystal element according to claim 1 .
When the crystal piece is viewed in a plane,
The upper surface of the flat plate portion and the upper surface of the fixed portion are located on the same plane, and the flat plate portion, the intermediate portion, and the fixed portion are arranged side by side in this order.
A crystal element characterized in that notches are formed at two corners of the four corners of the fixed portion facing opposite to the intermediate portion. The crystal element according to claim 1 to 3.
Looking at the crystal piece in a plane,
The upper surface of the flat plate portion and the upper surface of the fixed portion are located on the same plane, and the flat plate portion, the intermediate portion, and the fixed portion are arranged side by side in this order.
In a direction perpendicular to the direction in which the flat plate portion, the intermediate portion, and the fixed portion are arranged.
A crystal element characterized in that the length of the intermediate portion is longer than the length of the fixed portion. The crystal element according to claim 4.
Looking at the crystal piece in a plane,
In a direction perpendicular to the direction in which the flat plate portion, the intermediate portion, and the fixed portion are arranged.
A quartz element characterized in that the length of the intermediate portion is longer than the length of the flat plate portion. The crystal element according to claim 1 to 5,
The substrate on which the crystal element is mounted and
With the lid bonded to the substrate,
A crystal device characterized by consisting of. The method for manufacturing a quartz element according to claim 1 to 6.
A crystal wafer preparation process for preparing a crystal wafer having the same vertical thickness as the fixed portion,
A crystal wafer etching step of etching the crystal wafer so as to form a portion to be the crystal piece by using a photolithography technique and an etching technique.
A metal pattern forming step of forming a predetermined metal pattern on the formed portion to be the crystal piece,
The individualization step of individualizing the portion to be the crystal piece, and
A method for manufacturing a quartz element, which comprises.

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