JP6624504B2 - Evaporation mask and method of manufacturing evaporation mask - Google Patents

Description

  The present invention relates to an evaporation mask in which a plurality of through holes are formed, and a method for manufacturing the evaporation mask.

  In recent years, display devices used in portable devices such as smartphones and tablet PCs have been required to have high definition, for example, a pixel density of 400 ppi or more. Also, there is a growing demand for portable devices to be compatible with Ultra Full HD. In this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

  Among display devices, an organic EL display device has attracted attention because of its good responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, there is known a method of forming pixels in a desired pattern using an evaporation mask including through holes arranged in a desired pattern. Specifically, first, the substrate for the organic EL display device is put into the vapor deposition device, and then the deposition mask is brought into close contact with the substrate for the organic EL display device in the vapor deposition device, and the organic material is vapor-deposited on the substrate. A vapor deposition process is performed. In this case, in order to accurately manufacture an organic EL display device having a high pixel density, it is necessary to securely attach an evaporation mask to a substrate. When the evaporation mask is not in close contact with the substrate, that is, when a gap is formed between the evaporation mask and the substrate, the organic material may enter the gap and cause color mixing between adjacent pixels. Further, the vapor deposition mask floating from the substrate inhibits the adhesion of the organic material to the substrate, particularly obliquely to the plate surface of the substrate, that is, causes unevenness in the adhesion of the organic material, and thereby the organic EL display having the substrate. In the device, luminance unevenness may occur.

  As a technique for improving the adhesion between a deposition mask and a substrate, a technique disclosed in Patent Document 1 is known. In Patent Literature 1, a magnet is arranged on the side of the substrate opposite to the evaporation mask, and the evaporation mask is brought into close contact with the substrate by the magnetic force of the magnet. Here, as the vapor deposition mask, a metal plate formed of an invar material (Fe-36Ni) having a through hole formed by etching using a photolithography technique is used. Since the invar material has a small coefficient of thermal expansion, the dimensional change of the vapor deposition mask using the invar material is small even when the vapor deposition processing of the organic material is performed in a high-temperature atmosphere. Therefore, there is an advantage that the dimensional accuracy and positional accuracy of the organic material attached to the substrate are improved.

  Further, as a vapor deposition mask, for example, a vapor deposition mask manufactured by using a plating process as disclosed in Patent Document 2 is also known. According to this technique, a thinned evaporation mask can be manufactured with high accuracy.

Japanese Patent No. 5382259 JP 2001-234385 A

  According to the study of the present inventors on this evaporation mask, when a magnet is arranged on the side of the substrate opposite to the evaporation mask and the evaporation mask is brought into close contact with the substrate by the magnetic force of the magnet, the evaporation mask thinned as the evaporation mask It has been found that the use of No. makes it impossible to obtain sufficient adhesion. This phenomenon is considered to be due to the following mechanism. That is, the thinned deposition mask is more easily bent than a non-thinned deposition mask, and is greatly bent by, for example, gravity. The bent portion is largely separated from the substrate and the magnet. Incidentally, it is known that the magnetic force acting between two objects is inversely proportional to the square of the distance between the two objects. Therefore, the magnetic force applied to the portion of the deposition mask that is far away from the magnet is greatly reduced, and the adhesion of the thinned deposition mask to the substrate is reduced.

  The present invention has been made in consideration of such a point, and has as its object to improve the adhesion of a thinned deposition mask to a substrate.

The vapor deposition mask of the present invention,
A metal layer, a plurality of through holes provided in the metal layer, a vapor deposition mask having,
The metal layer has a thickness of 40 μm or less,
The metal layer contains an alloy layer containing nickel in an amount of 40% by weight or more and 55% by weight or less, with the balance being iron and unavoidable impurities.

  In the vapor deposition mask of the present invention, the metal layer may be formed by plating.

The manufacturing method of the vapor deposition mask of the present invention,
A resist forming step of forming a resist pattern with a predetermined gap on a predetermined base material,
A plating step of depositing a metal layer containing 40% by weight or more and 55% by weight or less of nickel in the gaps of the resist pattern, the balance including an alloy layer composed of iron and unavoidable impurities, and a thickness of 40 μm or less; ,
Separating the metal layer from the base material.

  According to the present invention, it is possible to improve the adhesion of the thinned deposition mask to the substrate.

FIG. 1 is a diagram for explaining an embodiment of the present invention, and is a plan view schematically showing an example of a deposition mask device including a deposition mask. FIG. 2 is a diagram for explaining a vapor deposition method using the vapor deposition mask device shown in FIG. FIG. 3 is a diagram showing a change in saturation magnetic flux density with respect to a nickel content in an iron-nickel alloy. FIG. 4 is a partial plan view showing the deposition mask shown in FIG. FIG. 5 is a diagram illustrating an example of a cross-sectional shape of the evaporation mask. FIG. 6A is a diagram illustrating a step of an example of a method of manufacturing a pattern substrate used for manufacturing a deposition mask by a plating process. FIG. 6B is a diagram illustrating a step of an example of a method of manufacturing a pattern substrate used for manufacturing a deposition mask by a plating process. FIG. 6C is a diagram illustrating a step of an example of a method of manufacturing a pattern substrate used for manufacturing a deposition mask by a plating process. FIG. 6D is a diagram illustrating a step of an example of a method of manufacturing a pattern substrate used for manufacturing a deposition mask by a plating process. FIG. 7A is a diagram illustrating a step of an example of a method of manufacturing the evaporation mask illustrated in FIG. 5 by a plating process. FIG. 7B is a view illustrating one step of an example of a method of manufacturing the evaporation mask illustrated in FIG. 5 by plating. FIG. 7C is a diagram illustrating a step of an example of a method of manufacturing the evaporation mask illustrated in FIG. 5 by a plating process. FIG. 8A is a diagram for explaining the function of the evaporation mask. FIG. 8B is a diagram for explaining the operation of the evaporation mask. FIG. 9A is a diagram illustrating a step of another example of the method of manufacturing the deposition mask by the plating process, and is a diagram illustrating the method according to the first modification. FIG. 9B is a diagram illustrating a step of another example of the method of manufacturing the deposition mask by the plating process, and is a diagram illustrating the method according to the first modification. FIG. 10 is a cross-sectional view showing a deposition mask obtained by the method shown in FIGS. 9A and 9B. FIG. 11 is a diagram illustrating an example of a cross-sectional shape of a deposition mask according to a second modification. FIG. 12A is a diagram illustrating a step of an example of a method for manufacturing the evaporation mask illustrated in FIG. 11 by etching. FIG. 12B is a view illustrating one step of an example of a method for manufacturing the evaporation mask illustrated in FIG. 11 by etching. FIG. 12C is a diagram illustrating a step of an example of a method for manufacturing the evaporation mask illustrated in FIG. 11 by etching. FIG. 12D is a diagram illustrating a step of an example of a method of manufacturing the evaporation mask illustrated in FIG. 11 by etching. FIG. 13A is a diagram illustrating an example of a cross-sectional shape of an evaporation mask according to a third modification. FIG. 13B is a diagram for explaining the operation of the vapor deposition mask shown in FIG. 13A. FIG. 14 is a diagram illustrating a modification of the vapor deposition mask device including the vapor deposition mask, and is a diagram illustrating the vapor deposition mask device according to the fourth modification.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, the scale and the vertical and horizontal dimensional ratios are appropriately changed and exaggerated for convenience of illustration and understanding.

  1 to 14 are diagrams for explaining an embodiment according to the present invention and its modified example. In the following embodiments and modifications thereof, a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as an example. However, without being limited to such an application, the present invention can be applied to an evaporation mask used for various uses.

  In the present specification, the terms “plate”, “sheet”, and “film” are not distinguished from each other based only on the difference in names. For example, “plate” is a concept that also includes members that can be called sheets and films.

  The “plate surface (sheet surface, film surface)” is a target plate-like (sheet-like, film-like) member when viewed as a whole and globally. Member, film-shaped member). Further, the normal direction used for a plate-shaped (sheet-shaped or film-shaped) member refers to the normal direction to the plate surface (sheet surface, film surface) of the member.

  Further, as used herein, the terms shape, geometric conditions and physical properties and their degree, for example, terms such as "parallel", "orthogonal", "identical", "equivalent" and the like, length and angle In addition, the values of the physical characteristics and the like are not limited to the strict meaning, and should be interpreted to include a range in which a similar function can be expected.

(Evaporation mask device)
First, an example of a deposition mask device including a deposition mask will be described with reference to FIGS. Here, FIG. 1 is a plan view showing an example of a vapor deposition mask device including a vapor deposition mask, and FIG. 2 is a diagram for explaining a method of using the vapor deposition mask device shown in FIG.

  The vapor deposition mask device 10 shown in FIGS. 1 and 2 includes a plurality of vapor deposition masks 20 having a substantially rectangular shape in a plan view, and a frame 15 attached to a peripheral portion of the vapor deposition masks 20. ing. Each of the evaporation masks 20 is provided with a plurality of through holes 25 that penetrate the evaporation mask 20. As shown in FIG. 2, the vapor deposition mask device 10 is configured such that the vapor deposition mask 20 faces a lower surface of a substrate to be vapor-deposited, for example, a substrate for an organic EL display device (hereinafter, also referred to as an organic EL substrate) 92. The organic EL substrate 90 is supported in the vapor deposition device 90 and is used for vapor deposition of a vapor deposition material on the organic EL substrate 92.

  In the vapor deposition device 90, a magnet 93 is arranged on the surface (the upper surface in FIG. 2) of the organic EL substrate 92 on the side opposite to the vapor deposition mask 20. As a result, the deposition mask 20 is attracted to the magnet 93 by the magnetic force from the magnet 93 and comes into close contact with the organic EL substrate 92. In the vapor deposition device 90, below the vapor deposition mask device 10, a crucible 94 for accommodating a vapor deposition material (for example, an organic light emitting material) 98 and a heater 96 for heating the crucible 94 are arranged. The evaporation material 98 in the crucible 94 is vaporized or sublimated by heating from the heater 96 and adheres to the surface of the organic EL substrate 92. As described above, a large number of through holes 25 are formed in the evaporation mask 20, and the evaporation material 98 adheres to the organic EL substrate 92 through the through holes 25. As a result, the vapor deposition material 98 is formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20. In FIG. 2, a surface (hereinafter, also referred to as a first surface) of the surface of the vapor deposition mask 20 that faces the organic EL substrate 92 during the vapor deposition process is denoted by reference numeral 20a. Further, of the surfaces of the vapor deposition mask 20, a surface located on the opposite side of the first surface 20a (hereinafter, also referred to as a second surface) is represented by reference numeral 20b. On the second surface 20b side, an evaporation source (here, a crucible 94) of an evaporation material 98 is arranged.

  As described above, in the present embodiment, the through holes 25 are arranged in a predetermined pattern in each effective area 22. In order to perform color display using a plurality of colors, vapor deposition machines equipped with vapor deposition masks 20 corresponding to each color are prepared, and the organic EL substrate 92 is sequentially put into each vapor deposition machine. Thus, for example, an organic light emitting material for red, an organic light emitting material for green, and an organic light emitting material for blue can be sequentially deposited on the organic EL substrate 92.

  Note that the frame 15 of the vapor deposition mask device 10 is attached to a peripheral portion of a rectangular vapor deposition mask 20. The frame 15 holds the vapor deposition mask 20 in a stretched state so that the vapor deposition mask 20 is not bent. The deposition mask 20 and the frame 15 are fixed to each other by, for example, spot welding.

  As an example of the material of the frame 15, an iron alloy containing nickel can be used. Specifically, for example, an iron alloy such as an invar material containing 34% by weight or more and 38% by weight or less of nickel or a super invar material containing cobalt in addition to nickel can be used. According to the frame 15 formed of such a material, the coefficient of thermal expansion of the frame 15 can be reduced. Therefore, even when the deposition process is performed inside the deposition apparatus 90 in a high-temperature atmosphere, the dimensional change due to the thermal expansion of the frame 15 can be reduced, and the deposition material deposited on the organic EL substrate 92 can be reduced. A decrease in dimensional accuracy and positional accuracy can be effectively suppressed. If the temperature during the vapor deposition processing does not reach a high temperature, it is not particularly necessary to reduce the thermal expansion coefficient of the frame 15 to the same level as that of the Invar material or the Super Invar material. In this case, as the material of the frame 15, various materials other than the above-described iron alloy, such as nickel and a nickel-cobalt alloy, can be used.

(Evaporation mask)
Next, the deposition mask 20 will be described in detail. As shown in FIG. 1, in the present embodiment, the vapor deposition mask 20 has a substantially quadrangular shape in plan view, and more precisely, a substantially rectangular contour in plan view. The vapor deposition mask 20 has a metal layer including an alloy layer described later. The metal layer includes an effective region 22 in which through holes 25 are formed in a regular arrangement, and a surrounding region 23 surrounding the effective region 22. Contains. The peripheral region 23 is a region for supporting the effective region 22 and is not a region through which a vapor deposition material intended to be vapor-deposited on the organic EL substrate 92 passes. For example, in a vapor deposition mask 20 used for vapor deposition of an organic light emitting material for an organic EL display device, the effective area 22 is a display area of an organic EL substrate 92 where an organic light emitting material is vapor deposited to form a pixel. A region in the evaporation mask 20 facing the area. However, for various purposes, a through-hole or a concave portion may be formed in the peripheral region 23. In the example shown in FIG. 1, each effective area 22 has a substantially quadrangular shape in plan view, and more precisely, a substantially rectangular contour in plan view. Although not shown, each effective area 22 can have various contours according to the shape of the display area of the organic EL substrate 92. For example, each effective area 22 may have a circular contour.

  In the example shown in FIG. 1, the plurality of effective regions 22 of the vapor deposition mask 20 are arranged in a line at a predetermined interval along one direction parallel to the longitudinal direction of the vapor deposition mask 20. In the illustrated example, one effective area 22 corresponds to one organic EL display device. That is, according to the vapor deposition mask device 10 (vapor deposition mask 20) shown in FIG. 1, multi-sided vapor deposition is possible.

  The metal layer of the deposition mask 20 has a thickness T of 40 μm or less. In particular, it has a thickness T of 3 μm or more and 20 μm or less. According to the vapor deposition mask 20 having the metal layer having such a thickness T, the vapor deposition mask 20 is sufficiently thin while having the desired durability. That is, it is possible to suppress the deposition material from the oblique direction with respect to both the plate surface of the organic EL substrate 92 and the direction normal to the plate surface from being hindered from adhering to the organic EL substrate 92. It is possible to suppress the occurrence of unevenness in the adhesion of the organic material. Thus, in the organic EL display device having the organic EL substrate 92, it is possible to effectively prevent the occurrence of luminance unevenness.

  A deposition mask having such a thinned metal layer is more easily bent than a non-thinned deposition mask, and is greatly bent by, for example, gravity. In the vapor deposition device 90, the bent portion is largely separated from the organic EL substrate 92 and the magnet 93. Considering that the magnetic force acting between two objects is inversely proportional to the square of the distance between the two objects, the magnetic force applied to a portion of the deposition mask that is far away from the magnet 93 is greatly reduced. Thus, the adhesion of the thinned deposition mask to the substrate is reduced.

Generally, the attraction force F by magnetic force, a magnetic flux density of the suction surface B, and the area of the suction surface A, as the magnetic permeability mu ₀ of a vacuum,
F = (1/2) × (B ² / μ ₀ ) × A (1)
Can be expressed as Therefore, when the area of the suction surface is constant, it is effective to increase the magnetic flux density B in order to increase the suction force F.

FIG. 3 is a graph showing a change in the saturation magnetic flux density with respect to the nickel content in the iron-nickel alloy. The horizontal axis shows the nickel content (unit: wt% (wt%)) in the iron-nickel alloy, and the vertical axis shows the saturation magnetic flux density (unit: Gauss (G)). According to the research of the present researchers, when the metal layer of the vapor deposition mask 20 includes a layer having a saturation magnetic flux density of 15.5 × 10 ³ G or more, the vapor deposition when receiving a magnetic field of a predetermined strength is performed. The magnetic flux density in the metal layer of the mask 20 becomes sufficiently large, that is, the attraction force F represented by the formula (1) becomes sufficiently large, and the substrate (for example, the organic EL substrate 92) of the evaporation mask 20 which is an object to be evaporated is provided. It has been found that good adhesion to the substrate can be obtained.

Thus, in the present embodiment, the metal layer of the evaporation mask 20 contains nickel in an amount of 40% by weight or more and 55% by weight or less corresponding to a saturation magnetic flux density of 15.5 × 10 ³ G or more, with the balance being iron and unavoidable. An alloy layer having a composition of impurities is included.

When the vapor deposition mask 20 has a metal layer including an alloy layer having such a composition, since the saturation magnetic flux density in the alloy layer is 15.5 × 10 ³ G or more, the magnet 93 attracts the vapor deposition mask 20 to the vapor deposition mask 20. The force is sufficiently large, and the adhesion of the deposition mask 20 to the organic EL substrate 92 can be effectively improved.

  When the content of nickel in the alloy layer is less than 30%, the coefficient of thermal expansion of the alloy layer increases, and the coefficient of thermal expansion of the vapor deposition mask including the alloy layer increases. As a result, the dimensional accuracy and the positional accuracy of the deposition material adhered on the organic EL substrate 92 may be reduced.

  Next, the through-hole 25 of the deposition mask 20 will be described in detail with reference to FIG. FIG. 4 is an enlarged view showing the deposition mask 20 from the first surface 20a side.

  In the example shown in FIG. 4, the plurality of through holes 25 formed in each effective area 22 are arranged at predetermined pitches in the effective area 22 along two directions orthogonal to each other. The shape and the like of the through hole 25 will be described in detail below. Here, the shape and the like of the through-hole 25 when the deposition mask 20 is formed by the plating process will be described.

  FIG. 5 is a cross-sectional view showing a case where the deposition mask 20 produced by the plating process is cut along the line AA in FIG.

  As shown in FIG. 5, the deposition mask 20 has a first metal layer 32 provided with a first opening 30 in a predetermined pattern and a second metal layer 32 provided with a second opening 35 communicating with the first opening 30. And two metal layers 37. The second metal layer 37 is disposed closer to the second surface 20b of the deposition mask 20 than the first metal layer 32 is. In the example shown in FIG. 5, the first metal layer 32 constitutes the first surface 20a of the deposition mask 20, and the second metal layer 37 constitutes the second surface 20b of the deposition mask 20. Further, in the illustrated example, the first metal layer 32 and the second metal layer 37 form a metal layer of the vapor deposition mask 20.

  In the present embodiment, the first opening 30 and the second opening 35 communicate with each other to form a through-hole 25 that penetrates through the evaporation mask 20. In this case, the opening size and opening shape of the through hole 25 on the first surface 20 a side of the vapor deposition mask 20 are defined by the first opening 30 of the first metal layer 32. On the other hand, the opening size and opening shape of the through hole 25 on the second surface 20 b side of the vapor deposition mask 20 are defined by the second opening 35 of the second metal layer 37. In other words, the through-hole 25 has both a shape defined by the first opening 30 of the first metal layer 32 and a shape defined by the second opening 35 of the second metal layer 37. I have.

  As shown in FIG. 4, the first opening 30 and the second opening 35 forming the through hole 25 may be substantially polygonal in plan view. Here, an example is shown in which the first opening 30 and the second opening 35 have a substantially square shape, more specifically, a substantially square shape. Although not shown, the first opening 30 and the second opening 35 may have other substantially polygonal shapes such as a substantially hexagonal shape and a substantially octagonal shape. The “substantially polygonal shape” is a concept including a shape in which corners of a polygon are rounded. Although not shown, the first opening 30 and the second opening 35 may have a circular shape. Further, as long as the second opening 35 has a contour surrounding the first opening 30 in plan view, the shape of the first opening 30 and the shape of the second opening 35 do not need to be similar.

  In FIG. 5, reference numeral 41 denotes a connection portion where the first metal layer 32 and the second metal layer 37 are connected. The symbol S0 indicates the size of the through hole 25 in the connection portion 41 between the first metal layer 32 and the second metal layer 37. Although FIG. 5 shows an example in which the first metal layer 32 and the second metal layer 37 are in contact with each other, the present invention is not limited to this, and the distance between the first metal layer 32 and the second metal layer 37 is not limited. Other layers may be interposed. For example, a catalyst layer for promoting the deposition of the second metal layer 37 on the first metal layer 32 may be provided between the first metal layer 32 and the second metal layer 37.

  As shown in FIG. 5, the opening size S2 of the through hole 25 (second opening 35) on the second surface 20b is larger than the opening size S1 of the through hole 25 (first opening 30) on the first surface 20a. Has become.

  In FIG. 5, a path of the vapor deposition material 98 that passes through the end 38 of the through hole 25 (second opening 35) on the second surface 20 b side of the vapor deposition mask 20, and that can reach the organic EL substrate 92. Of these, the path with the smallest angle with respect to the normal direction N of the vapor deposition mask 20 is represented by the symbol L1. The angle formed between the path L1 and the normal direction N of the vapor deposition mask 20 is represented by a symbol θ1. In order to allow the evaporation material 98 that moves obliquely to reach the organic EL substrate 92 as much as possible, it is advantageous to increase the angle θ1. For example, it is preferable to set the angle θ1 to 45 ° or more.

  The above-described opening dimensions S0, S1, S2 are appropriately set in consideration of the pixel density of the organic EL display device, the desired value of the above-described angle θ1, and the like. For example, when manufacturing an organic EL display device having a pixel density of 400 ppi or more, the opening dimension S0 of the through hole 25 in the connection portion 41 can be set in a range of 20 μm or more and 60 μm or less. The opening size S1 of the first opening 30 on the first surface 20a is set in a range of 10 μm or more and 50 μm or less, and the opening size S2 of the second opening 35 on the second surface 20b is 15 μm or more and 62 μm or less. It can be set within a range.

  In the example shown in FIG. 5, the thickness T of the metal layer, that is, the total thickness T of the first metal layer 32 and the second metal layer 37 is 40 μm or less. At least one of the first metal layer 32 and the second metal layer 37 is formed of an alloy layer containing nickel in an amount of 40% by weight or more and 55% by weight or less and a balance of iron and inevitable impurities. Preferably, the first metal layer 32 and the second metal layer 37 are formed of an alloy layer containing nickel in an amount of 40% by weight or more and 55% by weight or less, with the balance being composed of iron and inevitable impurities.

  Next, a method of manufacturing the evaporation mask 20 shown in FIG. 5 by using a plating process will be described.

[Pattern substrate preparation process]
First, an example of a method for manufacturing the pattern substrate 50 will be described. First, the base material 51 is prepared. Next, as shown in FIG. 6A, a conductive layer 52a made of a conductive material is formed. The conductive layer 52a is a layer that becomes the conductive pattern 52 by being patterned.

  The material constituting the base material 51 and the thickness of the base material 51 are not particularly limited as long as they have insulation properties and appropriate strength. For example, glass, synthetic resin, or the like can be used as a material forming the base material 51.

  As a material for forming the conductive layer 52a, a conductive material such as a metal material or an oxide conductive material is appropriately used. Examples of the metal material include, for example, chromium and copper. Preferably, a material having high adhesion to the resist pattern 53 described later is used as a material forming the conductive pattern 52. For example, when the resist pattern 53 is formed by patterning a so-called dry film, such as a resist film containing an acrylic photocurable resin, as a material for forming the conductive pattern 52, a high material for the dry film is used. It is preferable to use copper having adhesiveness.

  As described later, a first metal layer 32 is formed on the conductive pattern 52 formed by patterning the conductive layer 52a so as to cover the conductive pattern 52, and the first metal layer 32 is Is separated from the conductive pattern 52 in the step. Therefore, a depression corresponding to the thickness of the conductive pattern 52 is usually formed on the surface of the first metal layer 32 on the side in contact with the conductive pattern 52. In consideration of this point, it is preferable that the thickness of the conductive pattern 52, that is, the thickness of the conductive layer 52a is small as long as the conductive pattern 52 has the conductivity required for the electrolytic plating process. On the other hand, if the thickness of the conductive layer 52a is too small, the resistance value increases, and it becomes difficult to form the first metal layer 32 by electrolytic plating. For example, the thickness of the conductive layer 52a is in a range from 50 nm to 500 nm.

  Next, as shown in FIG. 6B, a resist pattern 53 having a predetermined pattern is formed on the conductive layer 52a. As a method of forming the resist pattern 53, a photolithography method or the like can be employed as in the case of the resist pattern 55 described later. As a method of irradiating the material for the resist pattern 53 with light in a predetermined pattern, a method of using an exposure mask that transmits exposure light in a predetermined pattern, or a method of exposing light to a material for the resist pattern 53 in a predetermined pattern And a method of relatively scanning. Thereafter, as shown in FIG. 6C, portions of the conductive layer 52a that are not covered with the resist pattern 53 are removed by etching. Next, as shown in FIG. 6D, the resist pattern 53 is removed. Thereby, the pattern substrate 50 on which the conductive pattern 52 having the pattern corresponding to the first metal layer 32 is formed can be obtained.

[First film forming step]
Next, a first film forming step of manufacturing the above-described first metal layer 32 using the pattern substrate 50 will be described. Here, a first plating process is performed in which a first plating solution is supplied onto the base material 51 on which the conductive pattern 52 is formed, and the first metal layer 32 is deposited on the conductive pattern 52. For example, the substrate 51 on which the conductive pattern 52 is formed is immersed in a plating tank filled with a first plating solution. Thereby, as shown in FIG. 7A, it is possible to obtain the first metal layer 32 provided with the first openings 30 in a predetermined pattern on the base material 51. The thickness of the first metal layer 32 is, for example, 5 μm or less.

  In addition, due to the characteristics of the plating process, as shown in FIG. 7A, the first metal layer 32 includes not only the portion overlapping the conductive pattern 52 when viewed along the normal direction of the base material 51, but also the conductive pattern 52. It can also be formed in a part that does not overlap with This is because the first metal layer 32 is further deposited on the surface of the first metal layer 32 deposited on the portion overlapping the end portion 54 of the conductive pattern 52. As a result, as shown in FIG. 7A, the end 33 of the first opening 30 may be located at a portion that does not overlap with the conductive pattern 52 when viewed along the normal direction of the base material 51. .

  As long as the first metal layer 32 can be deposited on the conductive pattern 52, the specific method of the first plating process is not particularly limited. For example, the first plating process may be performed as a so-called electrolytic plating process in which a current flows through the conductive pattern 52 to deposit the first metal layer 32 on the conductive pattern 52. Alternatively, the first plating process may be an electroless plating process. When the first plating process is an electroless plating process, a suitable catalyst layer may be provided on the conductive pattern 52. Alternatively, the conductive pattern 52 may be configured to function as a catalyst layer. Even when the electrolytic plating process is performed, a catalyst layer may be provided on the conductive pattern 52.

  The components of the first plating solution used are appropriately determined according to the characteristics required for the first metal layer 32. For example, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the first plating solution. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used. Various additives may be contained in the plating solution. As additives, pH buffering agents such as boric acid, primary brighteners such as saccharin sodium, secondary brightening agents such as butynediol, propargyl alcohol, coumarin, formalin, thiourea, and antioxidants can be used. .

[Second film formation step]
Next, a second film forming step of forming a second metal layer 37 provided with the second opening 35 communicating with the first opening 30 on the first metal layer 32 is performed. First, a resist forming step of forming a resist pattern 55 on the base material 51 and the first metal layer 32 with a predetermined gap 56 therebetween is performed. FIG. 7B is a cross-sectional view showing the resist pattern 55 formed on the base material 51. As shown in FIG. 7B, the resist forming step is performed so that the first opening 30 of the first metal layer 32 is covered with the resist pattern 55 and the gap 56 of the resist pattern 55 is located on the first metal layer 32. Will be implemented.

  Hereinafter, an example of the resist forming process will be described. First, a negative resist film is formed by attaching a dry film on the base material 51 and the first metal layer 32. Examples of the dry film include those containing an acrylic photocurable resin, such as RY3310 manufactured by Hitachi Chemical. Alternatively, a resist film may be formed by applying a material for the resist pattern 55 on the base material 51 and thereafter performing baking as necessary. Next, an exposure mask that prevents light from passing through a region of the resist film that should become the gap 56 is prepared, and the exposure mask is disposed on the resist film. Thereafter, the exposure mask is sufficiently adhered to the resist film by vacuum adhesion. Note that a positive type may be used as the resist film. In this case, an exposure mask that allows light to pass through a region of the resist film to be removed is used as the exposure mask.

  Thereafter, the resist film is exposed through an exposure mask. Further, the resist film is developed to form an image on the exposed resist film. As described above, as shown in FIG. 7B, the resist pattern 55 that provides the gap 56 located on the first metal layer 32 and covers the first opening 30 of the first metal layer 32 can be formed. . In order to make the resist pattern 55 adhere more firmly to the base material 51 and the first metal layer 32, a heat treatment step of heating the resist pattern 55 may be performed after the developing step.

  Next, a second plating process is performed in which a second plating solution is supplied to the gaps 56 of the resist pattern 55 to deposit the second metal layer 37 on the first metal layer 32. For example, the substrate 51 on which the first metal layer 32 is formed is immersed in a plating tank filled with a second plating solution. Thereby, as shown in FIG. 7C, the second metal layer 37 can be formed on the first metal layer 32. The thickness of the second metal layer 37 is set such that the thickness T of the metal layer of the evaporation mask 20 is 40 μm or less. More preferably, the thickness of the second metal layer 37 is set so that the thickness T of the metal layer of the evaporation mask 20 is in the range of 3 μm or more and 20 μm or less.

  As long as the second metal layer 37 can be deposited on the first metal layer 32, the specific method of the second plating process is not particularly limited. For example, the second plating process may be performed as a so-called electrolytic plating process in which a current flows through the first metal layer 32 to deposit the second metal layer 37 on the first metal layer 32. Alternatively, the second plating process may be an electroless plating process. When the second plating process is an electroless plating process, a suitable catalyst layer may be provided on the first metal layer 32. Even when the electrolytic plating process is performed, a catalyst layer may be provided on the first metal layer 32.

  As the second plating solution, the same plating solution as the above-described first plating solution may be used. Alternatively, a plating solution different from the first plating solution may be used as the second plating solution. When the composition of the first plating solution and the composition of the second plating solution are the same, the composition of the metal forming the first metal layer 32 and the composition of the metal forming the second metal layer 37 are also the same.

  Although FIG. 7C shows an example in which the second plating process is continued until the upper surface of the resist pattern 55 and the upper surface of the second metal layer 37 match, the present invention is not limited to this. With the upper surface of the second metal layer 37 located below the upper surface of the resist pattern 55, the second plating process may be stopped.

(Removal step)
After that, a removing step of removing the resist pattern 55 is performed. For example, the resist pattern 55 can be stripped from the base material 51, the first metal layer 32, and the second metal layer 37 by using an alkaline stripping solution.

(Separation step)
Next, a separation step of separating the combined body of the first metal layer 32 and the second metal layer 37 from the base material 51 is performed. Thereby, the first metal layer 32 provided with the first openings 30 in a predetermined pattern and the second metal layer 37 provided with the second openings 35 communicating with the first openings 30 are provided. An evaporation mask 20 can be obtained.

  The metal layer produced by the plating treatment has a glossy surface when observed with an optical microscope or the like. On the other hand, for example, when a metal layer produced by rolling a metal material using a roll is observed with an optical microscope or the like, a so-called roll streak is observed on the surface. Therefore, a metal layer formed by plating and a metal layer formed by another method, for example, rolling can be distinguished by observing the surface with an optical microscope or the like. In addition, the metal layer formed by the plating process contains sulfur and nitrogen as inevitable impurities. Therefore, the metal layer produced by the plating process and the metal layer produced by another method, for example, rolling, are also distinguished by investigating whether or not the metal layer contains sulfur or nitrogen. be able to.

  Next, with reference to FIGS. 8A and 8B, an operation of the above-described vapor deposition mask 20 will be described. The cross-sectional shape of the vapor deposition mask 20 actually has the shape described with reference to FIG. 5 or the shape described later with reference to FIG. 10 or FIG. Here, a portion formed between the adjacent through holes 25 in the vapor deposition mask 20 is indicated by a simple rectangle.

  As shown in FIG. 8A, the vapor deposition mask 20 of the vapor deposition mask device 10 is laminated on the organic EL substrate 92. In particular, in the illustrated example, the vapor deposition mask 20 is laminated on the organic EL substrate 92 from the lower surface side of the organic EL substrate 92. Here, the metal layer of the vapor deposition mask 20 of the vapor deposition mask device 10 has a thickness T of 40 μm or less. The thinned evaporation mask 20 is more easily bent than an unthinned evaporation mask. In the illustrated example, the evaporation mask 20 is largely bent by gravity, and the bent portion of the evaporation mask 20 is largely separated from the organic EL substrate 92.

  The deposition mask 20 contains nickel in an amount of 40% by weight or more and 55% by weight or less, and the balance includes an alloy layer composed of iron and inevitable impurities. The alloy layer having such a composition has a large saturation magnetic flux density, and the attractive force of the vapor deposition mask 20 due to the magnetic force of the magnet 93 is large. Therefore, as shown in FIG. 8B, when the magnet 93 is arranged on the surface (the upper surface in FIG. 8B) of the organic EL substrate 92 on the side opposite to the vapor deposition mask 20, the vapor deposition mask 20 As a result, the deposition mask 20 comes into close contact with the organic EL substrate 92.

  The vapor deposition mask 20 described above has metal layers 32 and 37 and a plurality of through holes 25 provided in the metal layers 32 and 37. The metal layers 32 and 37 have a thickness T of 40 μm or less. The metal layers 32 and 37 contain nickel in an amount of 40% by weight or more and 55% by weight or less, and the balance includes an alloy layer composed of iron and inevitable impurities.

  Further, the method of manufacturing the vapor deposition mask 20 described above includes a resist forming step of forming a resist pattern 55 on a predetermined base material 51 with a predetermined gap 56 therebetween, and nickel in the gap 56 of the resist pattern 55. A plating step of depositing metal layers 32 and 37 containing 40% by weight or more and 55% by weight or less, the balance including an alloy layer composed of iron and unavoidable impurities, and having a thickness T of 40 μm or less; And a separation step of separating the substrate from the base material 51.

  According to the vapor deposition mask 20 and the method of manufacturing the vapor deposition mask 20, the alloy layers included in the metal layers 32 and 37 of the vapor deposition mask 20 have a large saturation magnetic flux density. When received, the magnetic flux density in the metal layers 32 and 37 of the vapor deposition mask 20 becomes sufficiently large. Therefore, even when the thinned and flexible deposition mask 20 is used, the attraction force of the deposition mask 20 due to the magnetic force of the magnet 93 is sufficiently large, so that the deposition mask 20 can be applied to the substrate to be deposited. Good adhesion can be obtained.

  Note that various changes can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, portions that can be configured in the same manner as in the above-described embodiment will use the same reference numerals as those used for corresponding portions in the above-described embodiment, A duplicate description will be omitted. In addition, when it is clear that the operation and effect obtained in the above-described embodiment can be obtained in the modification, the description thereof may be omitted.

(First Modification)
5 and FIGS. 7A to 7C described above, the case where the deposition mask 20 is configured by stacking at least two metal layers, that is, a first metal layer 32 and a second metal layer 37 will be described. did. However, the present invention is not limited to this, and the vapor deposition mask 20 may be constituted by one metal layer 27 in which a plurality of through holes 25 are formed in a predetermined pattern. Hereinafter, an example in which the evaporation mask 20 includes one metal layer 27 will be described with reference to FIGS. 9A to 10. In this modification, a portion of the through-hole 25 extending from the first surface 20a to the second surface 20b of the deposition mask 20 and located on the first surface 20a is referred to as a first opening 30. A portion located on the second surface 20b is referred to as a second opening 35.

  First, a method of manufacturing the deposition mask 20 according to the present modification will be described.

  First, a base material 51 on which a predetermined conductive pattern 52 is formed is prepared. Next, as shown in FIG. 9A, a resist forming step of forming a resist pattern 55 on the base material 51 with a predetermined gap 56 therebetween is performed. Preferably, the interval between the side surfaces 57 of the resist pattern 55 that defines the gap 56 of the resist pattern 55 decreases as the distance from the base material 51 increases. That is, the resist pattern 55 has a shape in which the width of the resist pattern 55 increases as the distance from the substrate 51 increases, that is, a so-called reverse tapered shape.

  An example of a method for forming such a resist pattern 55 will be described. For example, first, a resist film containing a photocurable resin is provided on the surface of the substrate 51 on the side where the conductive pattern 52 is formed. Next, the resist film is exposed by irradiating the resist film with exposure light incident on the base material 51 from the side of the base material 51 opposite to the side on which the resist film is provided. After that, the resist film is developed. In this case, a resist pattern 55 having an inversely tapered shape as shown in FIG. 9A can be obtained based on the wraparound (diffraction) of the exposure light.

  Next, as shown in FIG. 9B, a plating process is performed in which a plating solution is supplied to the gap 56 of the resist pattern 55 to deposit the metal layer 27 on the conductive pattern 52. Thereafter, by performing the above-described removal step and separation step, the vapor deposition mask 20 including the metal layer 27 provided with the through holes 25 in a predetermined pattern as shown in FIG. 10 can be obtained. The thickness T of the metal layer 27 is 40 μm or less.

  Note that the resist pattern 55 that can be used for manufacturing the evaporation mask 20 illustrated in FIG. 10 is not limited to the resist pattern 55 illustrated in FIGS. 9A and 9B. For example, even when the resist pattern 55 has a shape in which the width of the resist pattern 55 becomes narrower as the distance from the base material 51 increases, that is, a so-called forward taper shape, the vapor deposition provided with the through holes 25 shown in FIG. A mask 20 can be obtained. In this case, the surface of the metal layer 27 formed by the plating process that is in contact with the base material 51 is the second surface 20b of the deposition mask 20.

(Second Modification)
In the present embodiment and the first modification described above, the example in which the deposition mask 20 is manufactured by the plating process has been described. However, the method adopted for producing the deposition mask 20 is not limited to the plating process. Hereinafter, an example of manufacturing the vapor deposition mask 20 by forming the through holes 25 in the metal plate 21 by etching will be described.

  FIG. 11 is a cross-sectional view showing a case where the evaporation mask 20 manufactured by using etching is cut along the line AA in FIG. In the example shown in FIG. 11, as will be described in detail later, a first opening 30 is formed in the first surface 21a of the metal plate 21 on one side in the normal direction of the evaporation mask 20 by etching, and the metal plate 21 A second opening 35 is formed in the second surface 21b on the other side in the normal direction by etching. The first opening 30 is connected to the second opening 35 so that the second opening 35 and the first opening 30 communicate with each other. The through-hole 25 includes a second opening 35 and a first opening 30 connected to the second opening 35. Further, in the illustrated example, the metal plate 21 forms a metal layer of the evaporation mask 20.

  As shown in FIG. 11, from the first surface 20a side of the deposition mask 20 to the second surface 20b side, along the plate surface of the deposition mask 20 at each position along the normal direction of the deposition mask 20. The cross-sectional area of each first opening 30 in the cross section gradually decreases. Similarly, the cross-sectional area of each second opening 35 in a cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 is from the side of the second surface 20b of the vapor deposition mask 20. The size gradually decreases toward the first surface 20a.

  As shown in FIG. 11, the wall surface 31 of the first opening 30 and the wall surface 36 of the second opening 35 are connected via a circumferential connection portion 41. The connection part 41 is formed by merging the wall surface 31 of the first opening 30 inclined with respect to the normal direction of the evaporation mask 20 and the wall surface 36 of the second opening 35 inclined with respect to the normal direction of the evaporation mask 20. It is defined by the ridgeline of the overhang. The connecting portion 41 defines a through portion 42 in which the area of the through hole 25 is minimized in plan view of the deposition mask 20.

  As shown in FIG. 11, two adjacent through-holes 25 on one side surface along the normal direction of the vapor deposition mask 20, that is, on the first surface 20a of the vapor deposition mask 20, are formed on the plate surface of the vapor deposition mask. Along with each other. That is, the metal plate 21 is etched from the first surface 21a side of the metal plate 21 corresponding to the first surface 20a of the vapor deposition mask 20 to produce the first opening 30 as in a manufacturing method described later. In this case, the first surface 21a of the metal plate 21 remains between two adjacent first openings 30.

  Similarly, as shown in FIG. 11, on the other side along the normal direction of the evaporation mask, that is, on the side of the second surface 20 b of the evaporation mask 20, two adjacent second openings 35 are formed by evaporation. It may be separated from each other along the plate surface of the mask. That is, the second surface 21 b of the metal plate 21 may remain between two adjacent second openings 35. In the following description, a portion of the effective region 22 of the second surface 21b of the metal plate 21 that remains without being etched is also referred to as a top portion 43. By forming the vapor deposition mask 20 so that such a top portion 43 remains, the vapor deposition mask 20 can have sufficient strength. This can prevent the vapor deposition mask 20 from being damaged, for example, during transportation. If the width β of the top portion 43 is too large, a shadow is generated in the vapor deposition step, and the utilization efficiency of the vapor deposition material 98 may be reduced. Therefore, it is preferable that the deposition mask 20 is manufactured so that the width β of the top portion 43 does not become excessively large. For example, the width β of the top portion 43 is preferably 2 μm or less. Note that the width β of the top portion 43 generally changes according to the direction in which the width β is measured. For example, as shown in FIG. 11, the width β of the top portion 43 in the cross-sectional view when the deposition mask is virtually cut along the line AA in FIG. 4 and the direction intersecting the line AA in FIG. The width β of the top part 43 in the cross-sectional view when the deposition mask is virtually cut along the direction may be different from each other. In this case, the vapor deposition mask 20 may be configured so that the width β of the top portion 43 is 2 μm or less when the vapor deposition mask 20 is cut in any direction.

  In FIG. 11, as in the case shown in FIGS. 5 and 10 described above, the path of the vapor deposition material 98 passing through the end 38 of the through hole 25 (second opening 35) on the second surface 20b side of the vapor deposition mask 20. In addition, among the paths that can reach the organic EL substrate 92, the path that has the smallest angle with respect to the normal direction N of the deposition mask 20 is represented by reference numeral L1. The angle formed between the path L1 and the normal direction N of the vapor deposition mask 20 is represented by a symbol θ1. Also in this embodiment, in order to increase the utilization efficiency of the evaporation material 98, it is preferable to increase the angle θ1.

  Next, a method of manufacturing the evaporation mask 20 shown in FIG. 11 by using etching will be described.

  First, a metal plate 21 having a thickness T of 40 μm or less is prepared. As a material for forming the metal plate 21, an alloy containing nickel in an amount of 40% by weight or more and 55% by weight or less and a balance of iron and unavoidable impurities is used. Next, as shown in FIG. 12A, a first resist pattern 65a is formed on the first surface 21a of the metal plate 21 with a predetermined gap 66a. Further, a second resist pattern 65b is formed on the second surface 21b of the metal plate 21 with a predetermined gap 66b.

  Thereafter, as shown in FIG. 12B, a first surface etching step of etching a region of the first surface 21a of the metal plate 21 that is not covered with the first resist pattern 65a using a first etchant is performed. For example, the first etchant is sprayed from the nozzle arranged on the side facing the first surface 21a of the metal plate 21 toward the first surface 21a of the metal plate 21 over the first resist pattern 65a. As a result, as shown in FIG. 12B, erosion by the first etchant proceeds in a region of the first surface 21a of the metal plate 21 that is not covered by the first resist pattern 65a. Thereby, many first openings 30 are formed in the first surface 21a of the metal plate 21. As the first etching solution, for example, a solution containing a ferric chloride solution and hydrochloric acid is used.

  Thereafter, as shown in FIG. 12C, the first opening 30 is covered with a resin 69 having resistance to a second etchant used in a subsequent second surface etching step. That is, the first opening 30 is sealed with the resin 69 having resistance to the second etching solution. In the example shown in FIG. 12C, the film of the resin 69 is formed so as to cover not only the first opening 30 formed but also the first surface 21a (the first resist pattern 65a) of the metal plate 21.

  Next, as shown in FIG. 12D, a region of the second surface 21b of the metal plate 21 that is not covered by the second resist pattern 65b is etched to form a second opening 35 in the second surface 21b. A surface etching step is performed. The second surface etching step is performed until the first opening 30 and the second opening 35 communicate with each other, whereby the through-hole 25 is formed. As the second etching solution, a solution containing, for example, a ferric chloride solution and hydrochloric acid is used in the same manner as the first etching solution.

  The erosion by the second etchant is performed on a portion of the metal plate 21 that is in contact with the second etchant. Therefore, the erosion proceeds not only in the normal direction (thickness direction) of the metal plate 21 but also in the direction along the plate surface of the metal plate 21. Here, preferably, in the second surface etching step, two second openings 35 formed at positions facing two adjacent gaps 66b of the second resist pattern 65b are positioned between the two gaps 66b. The process is terminated before merging on the back side of the bridge portion 67b. Thus, as shown in FIG. 12D, the above-described top portion 43 can be left on the second surface 21b of the metal plate 21.

  After that, the resin 69 is removed from the metal plate 21. Thereby, the vapor deposition mask 20 including the plurality of through holes 25 formed in the metal plate 21 can be obtained. The resin 69 can be removed by using, for example, an alkaline stripper. When an alkaline stripping solution is used, the resist patterns 65a and 65b can be removed simultaneously with the resin 69. After removing the resin 69, the resist patterns 65 a and 65 b may be removed separately from the resin 69 using a stripping solution different from the stripping solution for stripping the resin 69.

  Note that, in the examples shown in FIGS. 11 to 12D described above, the example in which the vapor deposition mask 20 is manufactured by etching the metal plate 21 from both the first surface 21a side and the second surface 21b side. However, the present invention is not limited to this, and although not shown, the metal plate 21 is etched from the second surface 21b side to form a through-hole 25 extending from the second surface 21b to the first surface 21a. The mask 20 may be manufactured.

(Third Modification)
FIG. 13A shows the vapor deposition mask 20 shown in FIG. 5 arranged such that the plate surface of the vapor deposition mask 20 is parallel to the horizontal direction and the first surface 20a of the vapor deposition mask 20 is on the upper side. In the illustrated example, gravity acts from the first surface 20a side of the vapor deposition mask 20 to the second surface 20b side (from the upper side to the lower side in FIG. 13A). Due to this gravity, the first metal layer 32 of the evaporation mask 20 bends and deforms toward the second surface 20b side (lower side). Specifically, a portion of the first metal layer 32 of the deposition mask 20 that extends from the side surface 36 of the second metal layer 37 in the plate surface direction of the deposition mask 20 and is not supported by the second metal layer 37 is It bends toward the second surface 20b side (lower side) by the action of gravity. In the illustrated example, an end of the upper surface 32a of the first metal layer 32 along the plate surface of the deposition mask 20 forms a lowermost portion 32a2 of the upper surface 32a of the first metal layer 32. In the upper surface 32a of the first metal layer 32, a region corresponding to a portion supported by the second metal layer 37 forms the uppermost portion 32a1 of the upper surface 32a of the first metal layer 32.

  In the example shown in FIG. 13A, the average of the distance D along the normal direction to the plate surface of the deposition mask 20 between the uppermost portion 32a1 and the lowermost portion 32a2 of the upper surface 32a of the first metal layer 32 is 1 μm or more. It is 3 μm or less. Here, the distance D is adjusted by appropriately adjusting the material of the first metal layer 32, the height (thickness) of the first metal layer 32, the width of the first metal layer 32, the width of the second metal layer 37, and the like. Can be set to 1 μm or more and 3 μm or less.

  The distance D between the uppermost portion 32a1 and the lowermost portion 32a2 of the upper surface 32a of the first metal layer 32 along the direction normal to the plate surface of the deposition mask 20 is determined by examining the entire region of the deposition mask 20. It is not necessary to calculate and specify the average value, and in practice, within one section having an area expected to reflect the overall tendency of the distance D, the degree of variation of the distance D is taken into consideration. The number can be specified by examining an appropriate number and calculating the average value. The value specified in this way can be handled as the distance D. For example, the distance D can be specified by measuring using a laser microscope or the like at 100 points included in a 30 mm × 30 mm area within the effective area 22 of the evaporation mask 20 and calculating the average.

  When the average of the distance D between the uppermost portion 32a1 and the lowermost portion 32a2 of the upper surface 32a of the first metal layer 32 along the direction normal to the plate surface of the vapor deposition mask 20 is within the above range, the vapor deposition mask After the first electrode 20 is disposed such that the first surface 20 a thereof faces the lower surface of the organic EL substrate 92, the magnet 93 is disposed on the surface (upper surface) of the organic EL substrate 92 opposite to the deposition mask 20. At this time, the first metal layer 32 of the vapor deposition mask 20 is attracted to the organic EL substrate 92 by the magnetic force of the magnet 93 and adheres to the organic EL substrate 92. That is, better adhesion of the first metal layer 32 of the evaporation mask 20 to the organic EL substrate 92 can be obtained.

  However, the vapor deposition mask device 10 is set on the lower surface side of the organic EL substrate 92 such that the first surface 20a of the vapor deposition mask 20 faces the lower surface of the organic EL substrate 92, that is, the first surface 20a faces upward. Even if the magnet 93 is arranged on the surface (upper surface) of the organic EL substrate 92 on the side opposite to the evaporation mask 20, the evaporation may occur due to minute unevenness or deformation that may be present on the evaporation mask 20. The mask 20 and the organic EL substrate 92 may not be completely adhered, and a minute gap G may be generated between the evaporation mask 20 and the organic EL substrate 92 (see FIG. 13B).

  Here, when the vapor deposition mask 20 is the vapor deposition mask 20 shown in FIG. 13A, that is, to the plate surface of the vapor deposition mask 20 between the uppermost portion 32a1 and the lowermost portion 32a2 of the upper surface 32a of the first metal layer 32. In the case of the evaporation mask 20 in which the average of the distances D along the normal direction is 1 μm or more and 3 μm or less, as shown in FIG. 13B, the first metal layer 32 has appropriate flexibility. As described above, the first metal layer 32 can be deformed so as to close the gap G generated between the evaporation mask 20 and the organic EL substrate 92. Therefore, it is possible to effectively prevent color mixing between adjacent pixels, which may be caused by the vapor deposition material (organic material) 98 entering the gap G between the vapor deposition mask 20 and the organic EL substrate 92.

(Fourth modification)
In the above-described embodiment and each of the modifications, the example in which the evaporation mask 20 includes the plurality of effective regions 22 arranged in a line along the longitudinal direction of the evaporation mask 20 has been described. There is no. For example, as shown in FIG. 14, a plurality of effective areas 22 may be arranged in a grid along both the longitudinal direction and the width direction of the evaporation mask 20.

  Although some modifications to the above-described embodiment have been described, it is needless to say that a plurality of modifications can be appropriately combined and applied.

DESCRIPTION OF SYMBOLS 10 Deposition mask apparatus 15 Frame 20 Deposition mask 21 Metal plate 22 Effective area 23 Peripheral area 25 Through hole 30 First opening 31 Wall surface 32 First metal layer 32a Upper surface 32a1 Uppermost 32a2 Lowermost 35 Second opening 36 Wall 37th 2 metal layer 41 connection part 43 top part 51 base material 52 conductive pattern 55 resist pattern 56 gap 65a first resist pattern 65b second resist pattern 90 vapor deposition device 92 organic EL substrate 93 magnet 98 vapor deposition material

Claims (3)

A metal layer, a plurality of through holes provided in the metal layer, a vapor deposition mask having,
The metal layer has a thickness of 40 μm or less,
The metal layer includes a first metal layer and a second metal layer overlapping the first metal layer,
The first metal layer and the second metal layer is a nickel-containing 40 wt% or more 55 wt% or less, ing of iron and inevitable impurities balance, evaporation mask. The vapor deposition mask according to claim 1, wherein the metal layer is a plating layer . On a given substrate, a first metal layer forming step of forming a first metal layer,
A resist forming step of forming a resist pattern having a gap on the first metal layer ;
A plating step of depositing a second metal layer in the gap of the resist pattern;
Have a, a separation step of separating the first metal layer and the second metal layer from the substrate,
A total thickness of the first metal layer and the second metal layer is 40 μm or less;
The method of manufacturing a deposition mask, wherein the first metal layer and the second metal layer contain nickel in an amount of 40% by weight or more and 55% by weight or less, with the balance being iron and inevitable impurities .

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