JP6586835B2 - Proximity exposure apparatus and proximity exposure method - Google Patents

Description

  The present invention relates to a proximity exposure apparatus and a proximity exposure method for irradiating a workpiece with exposure light through a mask.

In recent years, vacuum ultraviolet (Vacuum Ultra Violet: VUV) light having a wavelength of 200 nm or less has been used in various fields other than semiconductor exposure. For example, there is a technology for patterning self-assembled monolayers (SAM films) by using VUV and a mask to cause a chemical reaction by direct light without using a pattern formation process using a photoresist. Has been developed. The patterned SAM is used, for example, as a gate insulating film for an organic thin film transistor.
Patent Document 1 discloses a light irradiation apparatus that performs photopatterning processing of a SAM film with VUV light. VUV light is absorbed and attenuated by oxygen in a processing atmosphere containing oxygen such as air. Therefore, in the light irradiation apparatus described in Patent Document 1, the inside of the surrounding member surrounding the optical path in which the VUV light travels is purged with an inert gas, and the SAM film is irradiated without attenuation of the VUV light.

JP 2014-235965 A

  However, when the SAM film is irradiated with VUV light in an atmosphere not containing oxygen, only the SAM film is directly decomposed by the VUV light, and the processing speed of the patterning process cannot be improved. Therefore, it is considered that the space from the light source to the mask is purged with an inert gas, and the SAM film is irradiated with VUV light with a treatment atmosphere containing oxygen such as the atmosphere between the mask and the workpiece.

On the other hand, in the optical patterning process, high-precision pattern formation is desired as the pattern is miniaturized. In the proximity exposure apparatus, the size of the gap (gap) between the mask and the workpiece is on the order of microns. . Thus, when the gap between the mask and the workpiece is very small, it is difficult to supply a processing gas containing oxygen to the gap. Therefore, good patterning cannot be performed in the proximity exposure apparatus as described above.
Accordingly, an object of the present invention is to provide a proximity exposure apparatus and a proximity exposure method capable of realizing good patterning.

In order to solve the above problem, one aspect of a proximity exposure apparatus according to the present invention, a predetermined pattern is formed, exposing the workpiece through the luma disk is arranged with a workpiece with a predetermined gap therebetween Proxy A light exposure unit that emits parallel light including vacuum ultraviolet light from a short arc type flash lamp as exposure light, a mask stage that holds the mask, a work stage that holds the workpiece, A gas supply unit that supplies a processing gas containing oxygen to a space communicating with a gap between the mask held on a mask stage and the work held on the work stage, and exposure that irradiates the work with the exposure light. Prior to processing, the distance between the mask and the workpiece is a first distance that is the distance between the mask and the workpiece at the time of exposure. And a control unit for switching to a large second distance, the control unit, during the exposure process, off the short arc flash lamp stops the exposure process, and the said mask workpiece After switching the distance from the first distance to the second distance, the distance between the mask and the workpiece is changed from the second distance to the first distance without changing the position of the workpiece with respect to the mask. The exposure process is resumed by switching on the short arc flash lamp again.
In this way, in the space to which the processing gas containing oxygen is supplied, the distance between the mask and the workpiece is switched to the second distance that is larger than the first distance. Even in a small case, a treatment gas containing oxygen can be supplied to the gap. Therefore, the optical patterning process using vacuum ultraviolet light can be performed in an atmosphere of a processing gas containing oxygen, and the processing speed of the patterning process can be improved.

The proximity exposure apparatus further includes a work stage moving mechanism for moving the work stage, and the control unit drives and controls the work stage moving mechanism to thereby control the distance between the mask and the work. You may switch. In this case, the distance between the mask and the workpiece can be adjusted with a simple configuration. Usually, since the work stage is configured to be movable, it is not necessary to add a new moving mechanism, and the cost can be reduced accordingly.
The proximity exposure apparatus further includes a mask stage moving mechanism that moves the mask stage, and the control unit drives and controls the mask stage moving mechanism to thereby control the distance between the mask and the workpiece. You may switch. Thereby, the distance of a mask and a workpiece | work can be adjusted with a simple structure. In this case, the distance between the mask and the workpiece can be adjusted with a simple configuration.

Et al is, in the proximity exposure device described above, the after the the work stage workpiece is loaded, during the period from the work stage until the workpiece is unloaded, a plurality of times, the exposure process Stop, switching of the distance between the mask and the workpiece, and restarting the exposure process may be repeated. In this case, oxygen can be stably present in the gap between the mask and the workpiece during the exposure process. Therefore, better patterning can be realized.

In the proximity exposure apparatus, the gas supply unit may stop supplying the processing gas to the space during the exposure process. In this case, it is possible to prevent active oxygen such as ozone generated by irradiating the process gas existing in the gap between the mask and the workpiece with vacuum ultraviolet light from flowing due to the supply of the process gas. That is, active oxygen generated during the exposure process can be kept between the mask and the workpiece, and good patterning can be realized.
Furthermore, in the proximity exposure apparatus, the processing gas may include at least one of oxygen, ozone, and water vapor. As a result, oxygen that contributes to optical patterning can be appropriately supplied to the gap between the mask and the workpiece.

Another embodiment of the proximity exposure method according to the present invention, a predetermined pattern is formed, a proximity exposure method for exposing a workpiece through a mask which is arranged with a workpiece with a predetermined gap The first step of emitting parallel light including vacuum ultraviolet light from a short arc flash lamp as exposure light communicates with the gap between the mask held on the mask stage and the work held on the work stage. Prior to a second step of supplying a processing gas containing oxygen to the space, and an exposure process for irradiating the work with the exposure light, the distance between the mask and the work is set to the distance between the mask and the work at the time of exposure. is the distance between a third step of switching to a second distance greater than the first distance, only contains, in the third step, the exposure treatment The short arc type flash lamp is turned off to stop the exposure process, and after the distance between the mask and the workpiece is switched from the first distance to the second distance, the workpiece with respect to the mask is Without changing the position, the distance between the mask and the work is switched from the second distance to the first distance, the short arc flash lamp is turned on again, and the exposure process is resumed.
Thereby, even when the gap between the mask and the workpiece is very small, such as a micron order, a processing gas containing oxygen can be supplied to the gap. Therefore, the optical patterning process using vacuum ultraviolet light can be performed in an atmosphere of a processing gas containing oxygen, and the processing speed of the patterning process can be improved.

  With the proximity exposure apparatus according to the present invention, good patterning can be realized.

It is a figure which shows the structural example of the light irradiation apparatus in this embodiment. It is a figure which shows the structural example of a light source (SFL). It is a figure which shows the structural example of a vacuum ultraviolet light source device. It is a figure explaining the VUV irradiation process to the workpiece | work W. FIG. It is a figure explaining operation | movement of the stage in VUV irradiation process.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a diagram illustrating a configuration example of a light irradiation device according to the present embodiment.
The light irradiation apparatus 100 is a proximity exposure apparatus that arranges a workpiece W in parallel with a predetermined gap with respect to the mask M, and irradiates the workpiece W with exposure light through the mask M on which a mask pattern is formed. . The light irradiation apparatus 100 is an optical patterning apparatus that performs surface modification on an exposed portion on the workpiece W and transfers a mask pattern to the workpiece W.
The light irradiation device 100 includes a vacuum ultraviolet light source device 10 that emits vacuum ultraviolet light (VUV light). The vacuum ultraviolet light source device 10 includes a light source unit 10 a having the light source 11 shown in FIG. 2, a lamp housing 13, and a window unit 14 provided in the lamp housing 13.
The light source 11 is, for example, a point light source. As the light source 11, for example, a flash lamp having a high light intensity in the VUV region can be used. In the present embodiment, a case where a short arc flash lamp (SFL) is used as the light source 11 will be described. The light source 11 is, for example, an SFL that emits VUV light having a continuous spectrum in a wavelength range of 200 nm or less. In addition, the continuous spectrum referred to in the present embodiment is not a line spectrum but a state in which emission wavelengths are continuously distributed over a sufficiently wide wavelength width such as 10 nm or more.

Next, a specific configuration of the light source 11 will be described.
FIG. 2 is a diagram illustrating a configuration example of the light source 11. The light source 11 shown in FIG. 2 is a double-ended SFL.
The light source 11 includes an elliptical arc tube 111a made of a VUV light transmissive material such as quartz glass. A first sealing tube 111b and a second sealing tube 111c are connected to both ends of the arc tube 111a. Moreover, the glass tube 112 for sealing is inserted in the 2nd sealing tube 111c, and both are welded by the double tube part. In the arc tube 111a, for example, a rare gas such as xenon (Xe) or krypton (Kr) is used alone or a mixed gas of the rare gas and the halogen gas, H ₂ gas or N ₂ gas is enclosed. ing.
A pair of electrodes (a first main electrode (anode) 113a and a second main electrode (cathode) 113b) facing each other are disposed in the arc tube 111a. Here, the distance between the electrodes 113a and 113b is, for example, 1 mm to 10 mm.

The electrode rod 114a extending outward along the tube axis from the first main electrode 113a is led out from the end of the first sealing tube 111b. The electrode rod 114a is sealed (rod sealed) at the end of the first sealing tube 111b by means such as a step glass. The electrode rod 114b extending outward from the second main electrode 113b along the tube axis is led out from the end of the sealing glass tube 112 to the outside. The electrode rod 114b is sealed (rod sealed) at the end portion of the sealing glass tube 112 by means such as stepped glass. The pair of electrodes 113a and 113b is made of a tungsten sintered body impregnated with an easily electron emissive substance such as barium oxide (BaO), calcium oxide (CaO), alumina (Al ₂ O ₃ ), for example. The electrode rods 114a and 114b are made of tungsten, for example.

  A pair of trigger electrodes 115a and 115b are disposed between the electrodes 113a and 113b in the arc tube 111a as starting auxiliary electrodes. The trigger electrodes 115a and 115b are formed, for example, in a thin line shape, and are arranged so that the tip ends are spaced from each other on the center line connecting the tip of the electrode 113a and the tip of the electrode 113b. The trigger electrodes 115a and 115b are made of, for example, nickel, tungsten, or an alloy containing them.

  One end of a rod-shaped internal lead (internal lead bar) 116a is connected to the trigger electrode 115a. The internal lead 116a extends outward in the tube axis direction in parallel with the electrode rod 114b, and the external lead is interposed through the metal foil 118a in the double tube portion of the second sealing tube 111c and the sealing glass tube 112. It is electrically connected to 117a. Thereby, a foil seal structure is formed. Similarly, one end of a rod-shaped internal lead (internal lead bar) 116b is connected to the trigger electrode 115b. The internal lead 116b extends outward in the tube axis direction parallel to the electrode rod 114b, and in the double tube portion of the second sealing tube 111c and the sealing glass tube 112, the metal foil 118a extends in the circumferential direction. It is electrically connected to the external lead 117b via a metal foil 118b at a different position, for example, a position facing each other across the tube axis. The pair of internal leads 116a and 116b are made of tungsten, for example.

The pair of internal leads 116a and 116b and the electrode rod 114b are provided with a common supporter member 119, and the supporter member 119 is configured to dispose the cathode 113b and the trigger electrodes 115a and 115b at appropriate positions. It has become.
The external leads 117a and 117b related to the electrode rods 114a and 114b and the trigger electrodes 115a and 115b are connected to the external power feeding unit 15, respectively. The power supply unit 15 includes a capacitor (not shown) that stores predetermined energy. And the electric power feeding part 15 applies a pulse voltage as a trigger voltage between the trigger electrodes 115a and 115b while applying a high voltage between a pair of electrodes 113a and 113b by charging the said capacitor | condenser.
Thereby, arc discharge (main discharge) is generated between the cathode 113b and the anode 113a, and the light source 11 can be turned on.

As shown in FIG. 3, the VUV light emitted from the light source 11 is reflected by the elliptical condensing mirror 12, and becomes parallel light by the irradiation optical system 10b. And this parallel light turns into the light radiated | emitted from the light source part 10a, and radiate | emits from the window part 14 provided in the lamp housing 13 of FIG. The window portion 14 is made of, for example, synthetic quartz having a high transmittance for VUV light. Note that the window portion 14 may be formed of, for example, sapphire glass, calcium fluoride, magnesium fluoride, or the like, which has better transmittance at a shorter wavelength than quartz.
As shown in FIG. 3, the irradiation optical system 10 b includes an integrator lens 16, a folding mirror 17, and a collimator lens 18. The VUV light emitted from the light source 11 and reflected by the elliptical collector mirror 12 enters the integrator lens 16. The VUV light emitted from the integrator lens 16 is reflected by the folding mirror 17 and applied to the mask M and the workpiece W through the collimator lens 18. With such a configuration, the exposure light irradiated onto the workpiece W becomes VUV parallel light in which the uniformity of the illuminance distribution is maintained.

  However, since the integrator lens 16 and the collimator lens 18 are arranged on the optical path through which light travels before being emitted from the vacuum ultraviolet light source device 10 and irradiated onto the workpiece W, the integrator lens 16 and the collimator lens 18 are made of a material having good light transmittance in the VUV region. To do. In place of the collimator lens 18, a collimator mirror can be used. Further, the configuration of the irradiation optical system 10b is not limited to the configuration shown in FIG. 3, and any configuration may be used as long as the light emitted from the window portion 14 becomes a parallel light flux. Further, the vacuum ultraviolet light source device 10 may be a multi-lamp type using a plurality of light sources 11. Moreover, the light source 11 is not limited to the horizontal lighting shown in FIG.

1 is airtightly assembled with the lamp housing 13, and an inert gas A such as nitrogen (N ₂ ) gas is introduced into the lamp housing 13 from a gas inlet 13 a provided in the lamp housing 13. And the inside of the lamp housing 13 is purged with an inert gas to reduce the oxygen concentration. This is because VUV is severely subjected to absorption attenuation due to oxygen, and the inside of the lamp housing 13 is purged with an inert gas such as nitrogen (N ₂ ), neon (Ne), argon (Ar), krypton (Kr). Therefore, absorption attenuation due to oxygen of VUV can be prevented. The inert gas A introduced into the lamp housing 13 is exhausted from an exhaust port 13b provided in the lamp housing 13 after the flash lamp 11 and the elliptical condenser mirror 12 are cooled.
Note that the inside of the lamp housing 13 may be, for example, a vacuum or an atmosphere containing a slight amount of oxygen. Further, the lamp housing 13 may be assembled in an airtight manner by using the collimator lens 18 instead of the window portion 14.

The VUV light emitted from the vacuum ultraviolet light source device 10 is incident on the mask M, and the VUV light is applied to the workpiece W, which is a pattern forming substrate, through the mask M. The mask M is, for example, a pattern (irradiation pattern) including a light shielding part and a light transmitting part not provided with the light shielding part, after etching a light shielding material such as chromium on a light transmissive substrate such as glass or sapphire. ).
As the mask M, for example, a photomask such as a binary mask or a phase shift mask can be used. Further, as the mask M, a metal mask in which openings that are light transmitting portions are provided in a pattern with respect to a light-shielding substrate such as metal can be used.
On the light emitting side of the vacuum ultraviolet light source device 10, an enclosing member 21 that surrounds an optical path through which light emitted from the vacuum ultraviolet light source device 10 and incident on the mask M travels is provided. The mask M is sucked and held in a horizontal state by a mask stage 22 connected to the surrounding member 21.

The inside of the window 14, the surrounding member 21, the mask stage 22, and the mask M of the vacuum ultraviolet light source device 10 is a closed space. The enclosing member 21 is provided with a gas introduction port 21a, and nitrogen (N ₂ ), neon (Ne), argon (Ar), and krypton (Kr) are introduced into the enclosing member 21 that is a closed space from the gas introduction port 21a. An inert gas A such as is introduced, and the inside of the surrounding member 21 is purged with an inert gas to reduce the oxygen concentration. This is due to the same reason that the inside of the lamp housing 13 is purged with an inert gas. Further, the inert gas A introduced into the surrounding member 21 is exhausted from an exhaust port 21 b provided in the surrounding member 21.
Note that the inside of the lamp housing 13 may be, for example, a vacuum or an atmosphere containing a slight amount of oxygen.

The workpiece W is placed on the workpiece stage 23 and is sucked and held on the workpiece stage 23 by, for example, a vacuum chuck mechanism. The work stage 23 is configured to be movable in the XYZθ directions (left and right, front and rear, up and down directions, and a rotation direction around the Z axis in FIG. 1) by a stage moving mechanism 32. The stage moving mechanism 32 is driven and controlled by the control unit 31. The atmosphere in the space communicating with the gap between the mask M and the workpiece W is, for example, an atmospheric atmosphere (oxygen of about 20 kPa) by the control unit 31.
Specifically, an enclosing member 24 is provided on the light emitting side of the mask M so as to enclose an optical path through which light passing through the mask M and irradiating the workpiece W travels, and air introduced into the enclosing member 24 is introduced. Air B as a processing gas is introduced into the surrounding member 24 from the mouth 24a. The space inside the surrounding member 24 is a space that communicates with the gap between the mask M held on the mask stage 22 and the work W held on the work stage 23, and the space is an atmosphere of processing gas (in this embodiment, , An atmospheric atmosphere). The air B introduced from the air introduction port 24a can be exhausted from the exhaust port 24b. In the present embodiment, during the exposure process (light patterning process) in which the exposure light is irradiated onto the workpiece W, the introduction of the processing gas into the processing space is stopped so that the air B that is the processing gas does not flow. For example, during the optical patterning process, the air introduction port 24a and the exhaust port 24b may be closed, and the processing space may be a sealed space.

Note that the atmosphere of the processing space is not limited to an air atmosphere, and may be an atmosphere containing oxygen. For example, oxygen or ozone may be supplied from the air inlet 24a, or water vapor (H ₂ O) may be supplied. However, depending on the type of substrate constituting the workpiece W, a problem may occur when exposed to high-concentration ozone. Therefore, the processing gas supplied into the surrounding member 24 is determined according to the workpiece W. .
In FIG. 1, the air introduction port 24a is arranged toward the gap between the mask M and the workpiece W, and the air is injected toward the gap. The arrangement position of the air introduction port 24a is shown in FIG. It is not limited to the position shown. The air inlet 24a may be configured to be able to introduce the air B into the surrounding member 24. Further, it is not always necessary to exhaust the air B inside the surrounding member 24 to the outside. That is, the exhaust port 24b is not necessarily provided.

  In the present embodiment, the control unit 31 performs a process of supplying the air B to the gap between the mask M and the workpiece W prior to the optical patterning process. Specifically, prior to the optical patterning process, a process of switching the distance between the mask M and the workpiece W to a second distance larger than the first distance at the time of exposure is performed in a space that is an atmospheric atmosphere. Thereby, the air B is supplied to the gap between the mask M and the workpiece W, and a replacement process is performed in which the gas layer formed in the gap is replaced with an air layer that is a process gas layer. In the present embodiment, the control unit 31 moves the work stage 23 by the stage moving mechanism 32 to change the size of the gap between the mask M and the work W.

As described above, the stage moving mechanism 32 is a mechanism capable of moving the work stage 23 in the XYZθ directions. For example, as shown in FIG. 3, the stage moving mechanism 32 includes an X-direction moving mechanism 32 a that moves the work stage 23 in the X direction, a Y-direction moving mechanism 32 b that moves the work stage 23 in the Y direction, and a Z stage that moves the work stage 23 to Z. The Z direction moving mechanism 32c that moves in the direction and the θ direction moving mechanism 32d that moves the work stage 23 in the θ direction, and the control unit 31 controls driving of the moving mechanisms 32a to 32d individually.
In the replacement process, the control unit 31 moves the work stage 23 in the Z direction (up and down direction) by the Z direction moving mechanism 32c. That is, the control unit 31 horizontally moves the work stage 23 in the up and down direction in a sealed space that is an air purge space. This replacement process will be described in detail later.

Hereinafter, the workpiece W will be described.
For the workpiece W, a substrate containing an organic component can be used. For example, an aliphatic compound polymer can be used as the substrate material. As a specific example of the substrate material, for example, there is a cyclic polyolefin having an alicyclic hydrocarbon group.
As a raw material for the cyclic polyolefin, for example, dicyclopentadiene (DCPD) or a derivative of DCPD (norbornene derivative) is used. As the polymer, since it is difficult to homopolymerize these cyclic olefins due to steric hindrance, a method of addition polymerization with α-olefins or a method of ring-opening polymerization of cyclic olefins is used. The former polymer is called a cycloolefin copolymer (Cyclic Olefin Copolymer: COC), and the latter polymer is called a cycloolefin polymer (Cyclic Olefin Polymer: COP).
The molecular structure of COC is represented by the following formula (1), for example.

ＣＯＣは、例えば、ノルボルネンと炭素数２〜３０のαオレフィンとをメタロセン触媒にて付加共重合して得ることができる。本実施形態のパターン形成用基板（ワークＷ）を構成するＣＯＣは、一例として、下記（２）式

COC can be obtained, for example, by addition copolymerization of norbornene and an α-olefin having 2 to 30 carbon atoms using a metallocene catalyst. The COC constituting the pattern forming substrate (work W) of the present embodiment is, for example, the following formula (2)

〔式中、Ｒ⁸、Ｒ⁹、Ｒ¹⁰およびＲ¹¹は同一または異なっていて、それぞれ水素原子または好ましくは１〜２０個の炭素原子を有する炭化水素基（例えば、Ｃ₆〜Ｃ₁₀アリールやＣ₁〜Ｃ₈アルキルなど）である〕
で示される少なくとも１種の多環式オレフィンを、下記（３）式

[Wherein R ⁸ , R ⁹ , R ¹⁰ and R ¹¹ are the same or different and each is a hydrogen atom or preferably a hydrocarbon group having 1 to 20 carbon atoms (for example, C ₆ -C ₁₀ aryl or C ₁ -C ₈ alkyl, etc.)]
At least one polycyclic olefin represented by the following formula (3):

〔式中、Ｒ¹⁶、Ｒ¹⁷、Ｒ¹⁸およびＲ¹⁹は同一又は異なっていて、それぞれ水素原子または好ましくは１〜２０個の炭素原子を有する炭化水素基（例えば、Ｃ₆〜Ｃ₁₀アリールやＣ₁〜Ｃ₈アルキルなど）である〕
で示される少なくとも１種の非環式オレフィンでメタロセン触媒の存在下で共重合して得られたものとする。

[Wherein R ¹⁶ , R ¹⁷ , R ¹⁸ and R ¹⁹ are the same or different and each is a hydrogen atom or preferably a hydrocarbon group having 1 to 20 carbon atoms (for example, C ₆ -C ₁₀ aryl or C ₁ -C ₈ alkyl, etc.)]
It is obtained by copolymerizing at least one acyclic olefin represented by the above in the presence of a metallocene catalyst.

Representative examples of polycyclic olefins are norbornene and tetracyclododecene, both of which may be substituted with C ₁ -C ₆ alkyl. These polycyclic olefins are preferably copolymerized with ethylene. More preferably, the COC is a polymer obtained by copolymerizing norbornene and ethylene.
As the COP, for example, a polymer obtained by ring-opening polymerization of a cycloolefin monomer using a metathesis polymerization catalyst composed of a transition metal halide and an organometallic compound can be used.

  Specific examples of the monomer of COP used for the workpiece W include norbornene, its alkyl, alkylidene, aromatic substituted derivatives and halogens, ester groups, alkoxy groups, cyano groups of these substituted or unsubstituted norbornene monomers. Polar group substituents such as amide group, imide group, silyl group, for example, 2-norbornene, 5-methyl-2-norbornene, 5,5-dimethyl-2-norbornene, 5-ethyl-2-norbornene, 5-butyl 2-norbornene, 5-ethylidene-2-norbornene, 5-methoxycarbonyl-2-norbornene, 5-cyano-2-norbornene, 5-methyl-5-methoxycarbonyl-2-norbornene, 5-phenyl-2-norbornene 5,6-diethoxycarbonyl-2-norbornene, 1,4-methano-1,4, a, 9a-tetrahydro-9H-fluorene and the like; a monomer obtained by adding one or more cyclopentadiene to norbornene, and derivatives and substitutes similar to those described above, for example, 1,4: 5,8-dimethano-1, 4,4a, 5,6,7,8,8a-octahydronaphthalene, 6-methyl-1,4: 5,8-dimethano-1,4,4a, 5,6,7,8,8a-octahydro Naphthalene, 6-ethyl-1,4: 5,8-dimethano-1,4,4a, 5,6,7,8,8a-octahydronaphthalene, 6-ethylidene-1,4: 5,8-dimethano- 1,4,4a, 5,6,7,8,8a-octahydronaphthalene, 6,6-dimethyl-1,4: 5,8-dimethano-1,4,4a, 5,6,7,8, 8a-octahydronaphthalene, 6-methyl-6-methoxycarbonyl 1,4: 5,8-dimethano-1,4,4a, 5,6,7,8,8a-octahydronaphthalene, 4,9: 5,8-dimethano-2,3,3a, 4 4a, 5,8,8a, 9,9a-decahydro-1H-benzoindene and the like; a monomer of polycyclic structure which is a multimer of cyclopentadiene, its derivatives and substitutes similar to the above, for example, dicyclopentadiene 2,3-dihydrodicyclopentadiene, 4,9: 5,8-dimethano-3a, 4,4a, 5,8,8a, 9,9a-octahydro-1H-benzoindene and the like; cyclopentadiene and tetrahydroindene and the like Adducts thereof, derivatives and substitutes thereof similar to those mentioned above, for example, 1,4-methano-1,4,4a, 4b, 5,8,8a, 9a-octahydro-9H-fluorene, 5,8-methano -3a, 4,4 a, 5,8,8a, 9,9a-octahydro-1H-benzoindene, 1,4: 5,8-dimethano-1,2,3,4,4a, 4b, 7,8,8a, 9a-decatahydro -9H-fluorene, 1,4-methano-1,4,4a, 9a-tetrahydrofluorene, etc .; other cycloolefins, derivatives and substitutes thereof similar to the above, for example, cyclobutene, cyclopentene, cyclohexene, cyclooctene, 5 , 6-dihydrocyclopentadiene, 3a, 4,7,7a-tetrahydroindene, 4-ethylcyclohexene, and the like. These monomers may be used independently and may be used in combination of 2 or more type.

The workpiece W is not limited to a substrate made of COC or COP, and any synthetic resin substrate such as acrylic, PE (polyethylene), PP (polypropylene), or the like is applicable. Further, the present invention is not limited to plastics having C—H bonds, and plastics having C—F bonds such as polytetrafluoroethylene can also be applied. The workpiece W is appropriately selected according to the use of the pattern forming body or the surface modification.
In addition, as the workpiece W, a workpiece in which an organic monomolecular film (for example, a self-assembled monolayer (SAM film)) is provided on a base material made of an appropriate material can be used. .

The substrate on which the organic monomolecular film is provided is not particularly limited, and is appropriately selected in consideration of the use of the pattern forming body, the use of surface modification, the type of molecules constituting the organic monomolecular film, and the like. The Specifically, organic single crystals are formed on various substrates made of metals such as gold, silver, copper, platinum and iron, oxides such as quartz glass and aluminum oxide, compound semiconductors such as GaAs and InP, and polymer materials. A molecular film can be provided.
As a material constituting the organic monomolecular film, any organic molecule that can be excited and decomposed by VUV light is applicable. When the organic monomolecular film is a SAM film, it may be an organic molecule that has a functional group that chemically reacts with the surface of the base material and that self-assembles by interaction between molecules.
Specifically, a phosphonic acid compound represented by the following general formula (4) can be used as the organic molecule constituting the SAM film.

In the above formula (4), R ¹ represents a substituted or unsubstituted aliphatic hydrocarbon group or aromatic hydrocarbon group which may contain a halogen atom or a hetero atom, preferably substituted or unsubstituted. A linear or branched alkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted phenoxy group.
Specific examples of such phosphonic acid-based compound, butylphosphonic acid, hexyl phosphonic acid, octyl phosphonic acid, decylphosphonic acid, tetradecyl phosphonic acid, hexadecyl phosphonic acid, octadecyl phosphonic acid, 6-phosphono-hexanoic acid, 11-acetylmercaptoundecylphosphonic acid, 11-hydroxyundecylphosphonic acid, 11-mercaptoundecylphosphonic acid, 1H, 1H, 2H, 2H-perfluorooctanephosphonic acid, 11-phosphonoundecylphosphonic acid, 16-phospho Nohexadecanoic acid, 1,8-octanediphosphonic acid, 1,10-decyldiphosphonic acid, 1,12-dodecyldiphosphonic acid, benzylphosphonic acid, 4-fluorobenzylphosphonic acid, 2,3,4,5, 6-pentafluorobenzylphosphonic acid, 4-ni B benzyl phosphonic acid, 12-pentafluorophenoxy dodecyl phosphonic acid, and (12 Hosuhonododeshiru) phosphonate, 16 phosphonomethylglycine hexadecanoic acid, 11-phosphono undecanoic acid. In addition to the compound of formula (1), compounds such as [2- [2- (2-methoxyethoxy) ethoxy] ethyl] phosphonic acid are also applicable.
Further, as another example of the organic molecule constituting the SAM film, a thiol compound represented by the following general formula (5) can be used.

In the above formula (5), R ² is a substituted or unsubstituted aliphatic hydrocarbon group or aromatic hydrocarbon group which may contain a halogen atom or a hetero atom. In addition, a derivative of the compound of the above formula (5) in which the thiol group is further substituted is also applicable.
Specific examples of such thiol compounds or derivatives thereof include 1-butanethiol, 1-decanethiol, 1-dodecanethiol, 1-heptanethiol, 1-hexadecanethiol, 1-hexanethiol, 1-nonanethiol, 1-octadecanethiol, 1-octane thiol, 1-pentadecane thiol, 1-pentanethiol, 1-propanethiol, 1-tetra-decane thiol, 1-undecanethiol, 11-mercaptoundecyl trifluoroacetate, 1H, 1H, 2H, 2H-perfluorodecanethiol, 2-butanethiol, 2-ethylhexanethiol, 2-methyl-1-propanethiol, 2-methyl-2-propanethiol, 3,3,4,4,5,5,6, 6,6-Nonafluoro-1-hexanethiol 3-mercapto-N-nonylpropionamide, 3-methyl-1-butanethiol, 4-cyano-1-butanethiol, butyl 3-mercaptopropionate, cis-9-octadecene-1-thiol, 3-mercaptopropion methyl acid, tert- dodecyl mercaptan, tert- nonyl mercaptan, 1,11-decanedithiol, 1,16-hexadecandioyl thiol, 1,2-ethanedithiol, 1,3-propanedithiol, 1,4-butane dithiol, 1, 5-pentanedithiol, 1,6-hexanedithiol, 1,8-octanedithiol, 1,9-nonanedithiol, 2,2 ′-(ethylenedioxy) diethanethiol, 2,3-butanedithiol, 5,5 '-Bis (mercaptomethyl) -2,2'-bipyridine, Hexa (ethylene glycol) dithiol, tetra (ethylene glycol) dithiol, benzene-1,4-dithiol, (11 mercaptoundecyl) -N, N, N-trimethylammonium bromide, (11 mercapto mercaptoundecyl) hexa ( Ethylene glycol), (11-mercaptoundecyl) tetra (ethylene glycol), 1 (11-mercaptoundecyl) imidazole, 1-mercapto-2-propanol, 11- (1H-pyrrol-1-yl) undecane-1- Thiol, 11- (ferrocenyl) undecanethiol, 11-amino-1-undecanethiol hydrochloride, 11-azido-1-undecanthiol, 11-mercapto-1-undecanol, 11-mercaptoundecanamide, 11-mercapto Undecanoic acid, 11-mercaptoundecyl hydroquinone, 11-mercaptoundecylphosphonic acid, 11-mercaptoundecyl phosphoric acid, 12-mercaptododecanoic acid, 12-mercaptododecanoic acid NHS ester, 16-mercaptohexadecanoic acid, 3-amino- 1-propanethiol hydrochloride, 3-chloro-1-propanethiol, 3-mercapto-1-propanol, 3-mercaptopropionic acid, 4-mercapto-1-butanol, 6- (ferrocenyl) hexanethiol, 6-amino- 1-hexane thiol hydrochloride, 6-mercapto-1-hexanol, 6-mercaptopurine hexanoic acid, 8-mercapto-1-octanol, 8- mercapto octanoic acid, 9-mercapto-1-nonanol, triethylene glycol mono-11- Merca Toundecyl ether, 1,4-butanedithiol diacetate, [11- (methylcarbonylthio) undecyl] hexa (ethylene glycol) methyl ether, [11- (methylcarbonylthio) undecyl] tetra (ethylene glycol), [11- (Methylcarbonylthio) undecyl] tri (ethylene glycol) acetic acid, [11- (methylcarbonylthio) undecyl] tri (ethylene glycol) methyl ether, hexa (ethylene glycol) mono-11- (acetylthio) undecyl ether, S, S ′-[1,4-phenylenebis (2,1-ethynediyl-4,1-phenylene)] bis (thioacetate), S- [4- [2- [4- (2-phenylethynyl) phenyl] ethynyl] Phenyl] thioacetate, S- (10 Undecenyl) thioacetate, S- thioacetate (11-bromo-undecyl), S- (4-azidobutyl) thioacetate, S- (4-bromobutyl) thioacetate (containing copper as a stabilizer), thioacetic acid S- (4-cyanobutyl), 1,1 ′, 4 ′, 1 ″ -terphenyl-4-thiol, 1,4-benzenedimethanethiol, 1-adamantanethiol, ADT, 1-naphthalenethiol, 2-phenylethane thiol, 4'-bromo-4-mercapto-biphenyl, 4'-mercapto-biphenyl carbonitrile, 4,4'-bis (mercaptomethyl) biphenyl, 4,4'-dimercapto stilbene, 4- (6-mercaptopurine hexyloxy) Benzyl alcohol, 4-mercaptobenzoic acid, 9-fluorenylmethylthiol, 9-mercaptofluoro Len, biphenyl-4,4-dithiol, biphenyl-4-thiol, cyclohexanethiol, cyclopentanethiol, m-carborane-1-thiol, m-carborane-9-thiol, p-terphenyl-4,4 ''- Examples include dithiol and thiophenol.
Furthermore, as another example, a silane compound represented by the following general formula (6) can be used as the SAM film.

In the above formula (6), R ^{3 to} R ⁶ are a substituted or unsubstituted aliphatic hydrocarbon group or aromatic hydrocarbon group which may contain a halogen atom or a hetero atom.
Specific examples of such silane compounds include bis (3- (methylamino) propyl) trimethoxysilane, bis (trichlorosilyl) methane, chloromethyl (methyl) dimethoxysilane, and diethoxy (3-glycidyloxypropyl) methylsilane. , diethoxy (methyl) vinylsilane, dimethoxy (methyl) octyl silane, dimethoxy methyl vinyl silane, N, N-dimethyl-4 - [(trimethylsilyl) ethynyl] aniline, 3-glycidoxypropyl dimethylethoxy silane, methoxy (dimethyl) octadecylsilane , Methoxy (dimethyl) octylsilane, octenyltrichlorosilane, trichloro [2- (chloromethyl) allyl] silane, trichloro (dichloromethyl) silane, 3- (trichlorosilyl) propyl methacrylate , N- [3- (trimethoxysilyl) propyl] -N ′-(4-vinylbenzyl) ethylenediamine hydrochloride, tridecafluorooctyltrimethoxysilane, 2-[(trimethylsilyl) ethynyl] anisole, tris [3 -(Trimethoxysilyl) propyl] isocyanurate, azidotrimethylsilane, 3- [2- (2-aminoethylamino) ethylamino] propyltrimethoxysilane, [3- (2-aminoethylamino) propyl] trimethoxysilane , 3-aminopropyl (diethoxy) methylsilane, (3-aminopropyl) triethoxysilane, (3-aminopropyl) trimethoxysilane, allyl triethoxysilane, allyl trichlorosilane, allyl trimethoxysilane, isobutyl (trimethoxy) silane, Etoki Dimethylphenylsilane, ethoxytrimethylsilane, octamethylcyclotetrasiloxane, (3-chloropropyl) trimethoxysilane, chloromethyltriethoxysilane, chloromethyltrimethoxysilane, (3-glycidyloxypropyl) trimethoxysilane, 3-glycyl Sid propyl dimethoxy methyl silane, 3-cyanopropyl triethoxy silane, 3-cyanopropyl trichloro silane, [3- (diethylamino) propyl] trimethoxysilane, diethoxy diphenyl silane, diethoxy dimethyl silane, diethoxy (methyl) phenylsilane , Dichlorodiphenylsilane, diphenylsilanediol, (N, N-dimethylaminopropyl) trimethoxysilane, dimethyloctadecyl [3- (trimethoxysilyl) Propyl] ammonium chloride, dimethoxy diphenyl silane, dimethoxy - methyl (3,3,3-trifluoropropyl) silane, triethoxy (isobutyl) silane, triethoxy (octyl) silane, 3- (triethoxysilyl) propionitrile, 3- (triethoxysilyl) propyl isocyanate, triethoxy vinyl silane, triethoxy phenyl silane, trichloro (octadecyl) silane, trichloro (octyl) silane, trichloro cyclopentyl, trichlorosilane (3,3,3-trifluoropropyl) silane, trichloro ( 1H, 1H, 2H, 2H-perfluorooctyl) silane, trichlorovinylsilane, trichloro (phenyl) silane, trichloro (phenethyl) silane, trichloro (hexyl) silane, Trimethoxy [2- (7-oxabicyclo [4.1.0] hept-3-yl) ethyl] silane, trimethoxy (octadecyl) silane, trimethoxy (octyl) silane, trimethoxy (7-octen-1-yl) silane, 3- (trimethoxysilyl) propyl acrylate, N- [3- (trimethoxysilyl) propyl] aniline, N- [3- (trimethoxysilyl) propyl] ethylenediamine, 3- (trimethoxysilyl) propyl methacrylate, 1- [3- (trimethoxysilyl) propyl] urea, trimethoxy (3,3,3-trifluoropropyl) silane, trimethoxy (2-phenylethyl) silane, trimethoxyphenylsilane, trimethoxy [3- (methylamino) Propyl] silane, p-tolyltrichlorosilane, Sill triethoxysilane, IH, IH, 2H, 2H-perfluorooctyl triethoxysilane, IH, IH, 2H, 2H-perfluorodecyltriethoxysilane, IH, IH, 2H, 2H-perfluoro dodecyl trichlorosilane, 1 , 2-bis (triethoxysilyl) ethane, 1,2-bis (trichlorosilyl) ethane, 1,6-bis (trichlorosilyl) hexane, 1,2-bis (trimethoxysilyl) ethane, bis [3- ( Trimethoxysilyl) propyl] amine, 3- [bis (2-hydroxyethyl) amino] propyl-triethoxysilane, vinyltrimethoxysilane, butyltrichlorosilane, tert-butyltrichlorosilane, (3-bromopropyl) trichlorosilane, (3-Bromopropyl) trimethoxysilane n- propyl triethoxysilane, hexachlorodisilane, hexadecyl trimethoxysilane, methoxy trimethylsilane, (3-mercaptopropyl) trimethoxysilane, and (3-iodo-propyl) trimethoxysilane.
The various organic molecules constituting the SAM film as described above are merely examples, and are not limited thereto.

Next, the VUV irradiation process for the workpiece W will be specifically described.
First, the control unit 31 drives and controls a vacuum chuck mechanism and the like, and holds the mask M set at a predetermined position of the mask stage 22 by vacuum suction. Next, the control unit 31 lowers the work stage 23 by the stage moving mechanism 32 and places the work W on the work stage 23, and then raises the work stage 23 by the stage moving mechanism 32 and moves the work W to a predetermined level. Set to the VUV light irradiation position. The VUV light irradiation position is a position where the size (gap) of the gap between the mask M and the workpiece W is, for example, 15 μm to 25 μm. The gap can be appropriately set according to the mask pattern, the resolution of the pattern to be realized, and the like. The distance between the mask M and the workpiece W when the workpiece W is arranged at the VUV light irradiation position corresponds to the first distance described above.

Next, the control unit 31 moves the work stage 23 in the XYθ direction by the stage moving mechanism 32 and performs alignment (alignment) between the mask M and the work W. That is, the alignment mark marked on the mask M and the alignment mark marked on the workpiece W are matched.
When the alignment of the mask M and the workpiece W is completed, the control unit 31 starts an optical patterning process. That is, as illustrated in FIG. 5A, the control unit 31 irradiates the workpiece W with VUV light, which is parallel light, from the vacuum ultraviolet light source device 10 through the mask M. Thereby, pattern formation by surface modification is performed on the workpiece W.

  As described above, when placing the workpiece W on the workpiece stage 23, the control unit 31 temporarily lowers the workpiece stage 23 in the air purge space, and then irradiates the workpiece stage 23 on which the workpiece W is placed with VUV light irradiation. Raise to position (eg, gap = 20 μm). Therefore, the air B is supplied between the mask M and the workpiece W at the start of the optical patterning process. Therefore, when VUV light is irradiated to the workpiece W, oxygen near the surface of the workpiece W generates active oxygen such as ozone and oxygen radicals by VUV irradiation. As a result, a decomposition reaction of organic molecules on the surface of the work W by VUV light and an oxidative decomposition reaction between active oxygen and organic molecules on the surface of the work W are performed, and patterning can be performed satisfactorily. The exposure time in the first irradiation process shown in FIG. 5A is, for example, 5 minutes.

  After the first irradiation step, the control unit 31 performs a replenishment step of turning off the light source 11 to stop the irradiation of the VUV light and replenishing the gap between the mask M and the workpiece W with fresh air. In the present embodiment, as shown in FIG. 5B, the control unit 31 lowers the work stage 23 downward from the VUV light irradiation position to widen the gap, and fresh air can easily enter from around the work W. To do. The size of the gap generated by lowering the work stage 23 is, for example, 1 mm. The size of the gap generated by the lowering of the work stage 23 is set to 10 times or more of the gap at the time of VUV light irradiation. The size of the gap (distance between the mask M and the work W) generated by the lowering of the work stage 23 corresponds to the second distance described above. Then, after lowering the work stage 23, the control unit 31 raises the work stage 23 again to the VUV light irradiation position. The time from when the work stage 23 starts to descend to when it returns to the VUV light irradiation position is, for example, 2 to 3 seconds.

After the replenishment step, the control unit 31 turns on the light source 11 again, and performs a second irradiation step of irradiating the workpiece W with VUV light through the mask M as shown in FIG. . By the replenishment process, fresh air has entered between the mask M and the workpiece W. Accordingly, also in the second irradiation step, good patterning can be performed as in the first irradiation step. The exposure time in the second irradiation process shown in FIG. 5C is the same as the first irradiation process (for example, 5 minutes).
The control unit 31 ends the VUV irradiation process after repeating the replenishing step and the second irradiation step a plurality of times (for example, twice). For example, when the exposure time in the first irradiation process and the second irradiation process is 5 minutes, the VUV irradiation process is completed in about 15 minutes.
When the VUV irradiation processing is completed, the control unit 31 turns off the light source 11, lowers the work stage 23, and stops supplying vacuum to the work stage 23, thereby taking out the irradiated work W from the work stage 23. Make it possible.

  As described above, the light irradiation apparatus 100 of the present embodiment radiates parallel light including VUV light as exposure light from the vacuum ultraviolet light source apparatus 10 and irradiates the workpiece W with the VUV parallel light through the mask M. To do. At this time, the VUV parallel light emitted from the vacuum ultraviolet light source device 10 travels through the space inside the surrounding member 21 purged by the inert gas and reaches the mask M. Therefore, it is possible to irradiate the workpiece W with the VUV light through the mask M while preventing the attenuation of the VUV light.

  In addition, the light irradiation apparatus 100 supplies a processing gas (for example, air) containing oxygen to the processing space on the light emission side of the mask M, so that the processing space is an atmospheric atmosphere. The processing space is a space inside the surrounding member 24 and is a space communicating with a gap between the mask M held on the mask stage 22 and the work W held on the work stage 23. Then, prior to the exposure processing, the light irradiation apparatus 100 temporarily switches the distance between the mask M and the workpiece W (the size of the gap) to a distance larger than the distance at the time of exposure. As described above, since the gap between the mask M and the workpiece W is temporarily widened in the air atmosphere, even if the gap between the mask M and the workpiece W is as small as about several tens of μm, The processing gas can be appropriately supplied to the gap between the mask M and the workpiece W. As a result, the workpiece W can be irradiated with VUV light in an atmosphere of a processing gas containing oxygen.

  When the workpiece W is irradiated with VUV light in a processing gas atmosphere containing oxygen such as the atmosphere, oxygen near the surface of the workpiece W becomes active oxygen by VUV irradiation, and in addition to the direct decomposition of organic molecules on the surface of the workpiece W by VUV light. The oxidative decomposition reaction between the active oxygen and the organic molecules on the surface of the workpiece W is also performed. Therefore, for example, the processing speed of the patterning process of the workpiece W can be improved as compared with the photo patterning process in a situation where the oxidative decomposition reaction is not performed, such as the photo patterning process in an inert gas atmosphere. Can do.

  Furthermore, the light irradiation apparatus 100 is configured so that the work stage 23 holding the work W can be moved in the vertical direction (Z direction), and the control unit 31 moves the work stage 23 up and down to thereby move the mask M and the work W. Change the size of the gap. Therefore, the processing gas containing oxygen can be easily supplied to the gap between the mask M and the workpiece W. Usually, in the proximity exposure apparatus, the work stage holding the work W is configured to be movable in the vertical direction (Z direction). Therefore, the distance between the mask M and the workpiece W can be changed without adding a new mechanism.

  Further, the control unit 31 stops the emission of the VUV light by the vacuum ultraviolet light source device 10 during the optical patterning process on the work W, and once lowers the work stage 23 from the VUV light irradiation position, then the VUV light. After returning to the irradiation position, VUV light emission by the vacuum ultraviolet light source device 10 is started. As described above, the gap between the mask M and the workpiece W is widened in the middle of the photo patterning process, and therefore, active oxygen used for the decomposition reaction in the photo patterning is appropriately supplemented between the mask M and the workpiece W. be able to. Further, by widening the gap between the mask M and the workpiece W, the treated gas such as carbon dioxide generated by the optical patterning process can be exhausted from the gap between the mask M and the workpiece W. That is, during the optical patterning process, a replacement process for replacing the air existing in the gap between the mask M and the workpiece W with fresh air can be interposed. Therefore, a good optical patterning process can be performed stably.

Further, the control unit 31 performs a replacement process a plurality of times after the workpiece W is loaded into the workpiece stage 23 until the workpiece W is unloaded from the workpiece stage 23. That is, the control unit 31 repeats the stop of the optical patterning process, the vertical movement of the work stage 23, and the restart of the optical patterning process a plurality of times. As described above, the light irradiation apparatus 100 performs the light patterning process intermittently by interposing the replacement process a plurality of times.
As a result, a desired pattern can be formed in a shorter processing time as compared to the case where the optical patterning process is continuously performed without interposing the replacement process. For example, when a photopatterning process is continuously performed to form a pattern with a line and space (L & S) of 20 μm on a work W having a SAM film formed on a substrate, the processing time is 30 minutes. . On the other hand, when the photo-patterning process was performed intermittently with a replacement process every 5 minutes, a pattern with a processing time of 15 minutes and an L & S of 20 μm could be formed.

  By the way, in order to supply the processing gas containing oxygen such as air between the mask M and the workpiece W, the processing gas between the mask M and the workpiece W is maintained without changing the positional relationship between the mask M and the workpiece W. It is also possible to pour in However, since the gap between the mask M and the workpiece W when the workpiece W is disposed at the VUV light irradiation position is as narrow as several tens of μm, a processing gas is poured between the mask M and the workpiece W. It is difficult. On the other hand, in the present embodiment, the workpiece W is temporarily lowered below the VUV light irradiation position to widen the gap between the mask M and the workpiece W, and then the workpiece W is returned to the VUV light irradiation position. Therefore, a processing gas containing oxygen can be appropriately present in a very narrow gap of several tens of μm between the mask M and the workpiece W.

  Further, in the present embodiment, the supply of the processing gas (for example, air) from the air inlet 24a is stopped during the optical patterning process. That is, the flow of the processing gas in the processing space inside the surrounding member 24 is stopped during the optical patterning process. Thereby, the active oxygen generated in the gap between the mask M and the workpiece W due to the irradiation of VUV light during the optical patterning can be kept in the gap between the mask M and the workpiece W. Therefore, good patterning can be realized.

(Modification)
In addition, although the case where the short arc type flash lamp is applied as the light source has been described in the above embodiment, light sources having various configurations can be used as long as the light source emits light including VUV light. Moreover, when applying a point light source as the said light source, it is not limited to a short arc type flash lamp, The light source which consists of various structures can be used. For example, the present invention is not limited to a flash lamp, and a short arc lamp that emits light by arc discharge with a short distance between electrodes of about 1 mm to 10 mm can also be applied.

Further, in the above embodiment, the case where the light emission side of the mask M is used as the processing space has been described. However, the processing space may be sealed by a window member that is disposed above the workpiece W and can transmit VUV light. Good. The window member can be made of quartz glass, magnesium fluoride (MgF ₂ ), or the like. This window member can serve as a gas caider.
Furthermore, in the said embodiment, although the control part 31 moved the work stage 23 horizontally to the up-down direction (Z direction), the case where the distance of the mask M and the workpiece | work W was changed was demonstrated. It is not limited to the structure which moves horizontally. For example, the distance between the mask M and the workpiece W may be changed by changing the inclination of the workpiece stage 23 with respect to the horizontal plane.

Furthermore, in the above-described embodiment, the case where the control unit 31 moves the work stage 23 to change the distance between the mask M and the work W has been described. However, the mask stage 22 may be moved. . In this case, the light irradiation apparatus 100 is provided with a mask stage moving mechanism that moves the mask stage 22, and the control unit 31 drives and controls the mask stage moving mechanism.
In the above embodiment, a space for storing a processing gas containing oxygen may be provided in the vicinity of the mask M and the workpiece W. Thereby, when the distance between the mask M and the workpiece W is switched from the first distance to the second distance at the time of exposure, the space between the mask M and the workpiece W is changed to the gap between the mask M and the workpiece W. It is possible to facilitate the flow of fresh process gas.

  DESCRIPTION OF SYMBOLS 10 ... Vacuum ultraviolet light source device, 11 ... Light source (SFL), 12 ... Parabolic mirror, 13 ... Lamp housing, 14 ... Window part, 15 ... Feeding part, 16 ... Integrator lens, 17 ... Folding mirror, 18 ... Collimator Lens 21, surrounding member, 21 a, gas inlet, 21 b, exhaust port, 22, mask stage, 23, work stage, 24, surrounding member, 24 a, air inlet, 24 b, exhaust port, 31, control unit, 32 ... Stage moving mechanism, 32c ... Z direction moving mechanism, 100 ... Light irradiation device (proximity exposure device), M ... Mask, W ... Workpiece

Claims (7)

Predetermined pattern is formed, a proximity exposure apparatus for exposing a workpiece through a luma disk is arranged with a workpiece with a predetermined gap therebetween,
A light source that emits parallel light including vacuum ultraviolet light from a short arc flash lamp as exposure light;
A mask stage for holding the mask;
A work stage for holding the work;
A gas supply unit for supplying a processing gas containing oxygen to a space communicating with a gap between the mask held on the mask stage and the work held on the work stage;
Prior to the exposure process for irradiating the workpiece with the exposure light, the distance between the mask and the workpiece is set to a second distance that is larger than the first distance that is the distance between the mask and the workpiece at the time of exposure. A control unit for switching ,
The controller is
During the exposure process, the short arc flash lamp is turned off to stop the exposure process,
After the distance between the mask and the workpiece is switched from the first distance to the second distance, the distance between the mask and the workpiece is changed to the second distance without changing the position of the workpiece with respect to the mask. Switch from the distance to the first distance,
A proximity exposure apparatus, wherein the exposure process is resumed by relighting the short arc flash lamp . A work stage moving mechanism for moving the work stage;
The controller is
The proximity exposure apparatus according to claim 1, wherein the distance between the mask and the workpiece is switched by driving and controlling the workpiece stage moving mechanism. A mask stage moving mechanism for moving the mask stage;
The controller is
The proximity exposure apparatus according to claim 1, wherein the distance between the mask and the workpiece is switched by driving and controlling the mask stage moving mechanism. The controller is
The exposure process is stopped, the distance between the mask and the work is switched, and the exposure is performed a plurality of times after the work is carried into the work stage and before the work is carried out from the work stage. proximity exposure device according to any one of claims 1 to 3, and repeating the restarting process. The gas supply unit
During the exposure process, a proximity exposure apparatus according to any one of claims 1 to 4, wherein the stopping the supply of the processing gas into the space. The process gas, oxygen, ozone, and a proximity exposure apparatus according to any one of claims 1 to 5, characterized in that it comprises at least one of water vapor. Predetermined pattern is formed, a proximity exposure method for exposing a workpiece through a mask which is arranged with a workpiece with a predetermined gap therebetween,
A first step of emitting parallel light including vacuum ultraviolet light from a short arc flash lamp as exposure light;
A second step of supplying a processing gas containing oxygen to a space communicating with a gap between the mask held on the mask stage and the work held on the work stage;
Prior to the exposure process for irradiating the workpiece with the exposure light, the distance between the mask and the workpiece is set to a second distance that is larger than the first distance that is the distance between the mask and the workpiece at the time of exposure. and a third step of switching, only including,
In the third step,
During the exposure process, the short arc flash lamp is turned off to stop the exposure process,
After the distance between the mask and the workpiece is switched from the first distance to the second distance, the distance between the mask and the workpiece is changed to the second distance without changing the position of the workpiece with respect to the mask. Switch from the distance to the first distance,
A proximity exposure method, wherein the exposure process is resumed by relighting the short arc flash lamp .

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