JP6584067B2 - Vacuum deposition equipment - Google Patents

Description

  The present invention relates to a vacuum deposition apparatus for forming a thin film such as a metal material or an organic material on a member to be deposited such as a substrate.

  Generally, when forming a thin film on the surface of a substrate, a vacuum evaporation apparatus is used. In this vacuum vapor deposition apparatus, the vapor deposition material is placed in a container such as a crucible, and heated by a heat source disposed in the container to evaporate the material, and the evaporated material is disposed in the upper part of the film forming chamber. It is attached to the surface of the substrate. In addition, it is necessary to control the deposition rate on the substrate surface to be constant, and this control is performed on the crucible based on the deposition rate obtained by the film thickness sensor based on the deposition rate obtained by the film thickness sensor. It was performed by controlling the heater (for example, refer patent document 1).

JP 2012-132049 A

  According to the above conventional configuration, the deposition rate is performed by controlling the heat source arranged in the container. For example, when the vapor deposition rate is low, evaporation of the vapor deposition material was promoted by increasing the temperature of the heat source, but the vapor deposition material deteriorates with a factor of the product of temperature and time, so the temperature cannot be increased. Therefore, the tact time may have to be reduced. That is, there is a problem that the effect of heating the vapor deposition material is large.

  Then, an object of this invention is to provide the vacuum evaporation system which can prevent the bad influence by the heating of vapor deposition material.

In order to solve the above problems, a vacuum deposition apparatus according to claim 1 of the present invention includes a deposition container for depositing a deposition material on a surface of a member to be deposited under vacuum to form a thin film, and the deposition container. A material supply device that guides the vapor deposition material to the vapor deposition member inside,
The material supply device
A material filling container filled with a powder deposition material;
An inert gas supply means for supplying an inert gas into the material-filled container;
Material guiding means for guiding the vapor deposition material to the vapor deposition member;
A deposition material control means for controlling the supply amount of the deposition material guided to the deposition target member;
The material guide means, or a heating means for vaporizing the vapor deposition material guided by the material guide means by heating the inside of the material guide means,
Provided vibrating means for imparting vibration to the material filling container,
The inert gas is one which is adapted to supply the lower part of the material charging container which is vibrating.

Moreover, the vacuum vapor deposition apparatus according to claim 2, the vapor deposition apparatus described in claim 1, as the deposition material control means controls the supply amount of the inert gas provided in the inert gas supply means gas A flow control valve is used.

A vacuum vapor deposition apparatus according to claim 3 provides the vapor deposition apparatus according to claim 1, as the deposition material control unit, the deposition amount of controlling the passage amount of the deployed evaporation material in the middle of the material guide means A control valve is used.

According to a fourth aspect of the present invention, there is provided a vapor deposition apparatus for depositing a vapor deposition material on a surface of a vapor deposition member under vacuum to form a thin film, and a vapor deposition material on the vapor deposition member in the vapor deposition container. A material supply device for guiding
The material supply device
A material filling container filled with a powder deposition material;
An inert gas supply means for supplying an inert gas into the material-filled container;
Material guiding means for guiding the vapor deposition material to the vapor deposition member;
A deposition material control means for controlling the supply amount of the deposition material guided to the deposition target member;
The material guide means, or a heating means for vaporizing the vapor deposition material guided by the material guide means by heating the inside of the material guide means,
Arranging a heat insulating part between the material guiding means and the material filling container,
It is obtained by placing the liquid reservoir having a liquid storage chamber in the interior as the heat insulating portion.

A vacuum vapor deposition apparatus according to claim 5, the vapor deposition apparatus described in any one of claims 1 to 3, in which is arranged a cooling unit between said material guide means and the material filling container.
Further, the vacuum deposition apparatus according to claim 6, the vapor deposition apparatus described in any one of claims 1 to 3, between the material guiding means and the material filling container, provided on the material guide means A material movement path changing member is arranged so that the radiant heat from the heating means does not reach the surface of the vapor deposition material in the material-filled container directly.

  According to the above configuration, the inert gas is supplied to the vapor deposition material made of the powder filled in the material filling container and guided to the material guide means, and the material guide means is provided with a heating means to vaporize the vapor deposition material. Therefore, the deposition material is heated in the crucible, that is, the deposition material is heated in the crucible, that is, the material-filled container, as compared with the conventional method in which the deposition rate is controlled by controlling the heating amount in the crucible. Therefore, there is no need to worry about the deterioration of the vapor deposition material. In addition, since the deposition rate can be increased by controlling the supply amount of the deposition material by means of the deposition material control means, the limit temperature is taken into consideration, unlike the conventional case where the deposition temperature is dependent on the heating temperature of the deposition material. Therefore, the deposition rate can be controlled over a wide range. That is, adverse effects due to heating of the vapor deposition material can be prevented.

It is a partially notched side view which shows schematic structure of the vacuum evaporation system which concerns on Example 1 of this invention. It is a graph which shows the relationship between the frequency in the vacuum evaporation system of the Example 1, and a vapor deposition rate. It is a graph which shows the relationship between the supply amount of the inert gas in the vacuum evaporation system of the Example 1, and a vapor deposition rate. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is sectional drawing which shows schematic structure of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is sectional drawing which shows schematic structure of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is sectional drawing which shows schematic structure of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is sectional drawing which shows the principal part structure of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is AA arrow sectional drawing of FIG. It is sectional drawing which shows schematic structure of the vacuum evaporation system which concerns on the modification of the Example 1. FIG. It is a partially notched side view which shows schematic structure of the vacuum evaporation system which concerns on Example 2 of this invention. It is a partially notched side view which shows schematic structure of the vacuum evaporation system which concerns on the modification of the Example 2. FIG. It is a partially notched side view which shows schematic structure of the vacuum evaporation system which concerns on the other modification of the Example 2. FIG. It is a partially notched side view which shows schematic structure of the vacuum evaporation system which concerns on Example 3 of this invention. It is a partially notched side view which shows the principal part of the vacuum evaporation system of the Example 3. FIG. It is a partially notched side view which shows the principal part of the vacuum evaporation system which concerns on the other modification of the Example 3. FIG. It is a partially notched side view which shows the principal part of the vacuum evaporation system which concerns on the other modification of the Example 3. FIG. It is a partially notched side view which shows schematic structure of the vacuum evaporation system which concerns on Example 4 of this invention. It is a graph which shows the relationship between the frequency in the vacuum evaporation system of the Example 4, and a vapor deposition rate. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is principal part sectional drawing of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is sectional drawing which shows schematic structure of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is sectional drawing which shows schematic structure of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is sectional drawing which shows schematic structure of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is sectional drawing which shows the principal part structure of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is BB arrow sectional drawing of FIG. It is sectional drawing which shows schematic structure of the vacuum evaporation system which concerns on the modification of the Example 4. FIG. It is a partially notched side view which shows schematic structure of the vacuum evaporation system which concerns on Example 5 of this invention. It is a partially notched side view which shows schematic structure of the vacuum evaporation system which concerns on the modification of the Example 5. FIG. It is a partially notched side view which shows schematic structure of the vacuum evaporation system which concerns on the other modification of the Example 5. FIG. It is a partially notched side view which shows schematic structure of the vacuum evaporation system which concerns on Example 6 of this invention. It is a partially notched side view which shows the principal part of the vacuum evaporation system which concerns on the Example 6. FIG. It is a partially notched side view which shows the principal part of the vacuum evaporation system which concerns on the other modification of the Example 6. FIG. It is a partially notched side view which shows the principal part of the vacuum evaporation system which concerns on the other modification of the Example 6. FIG.

Hereinafter, the vacuum evaporation system concerning Example 1 of the present invention is explained based on a drawing.
As shown in FIG. 1, this vacuum vapor deposition apparatus uses a thin film substrate (specifically, a film) as a vapor deposition member under a predetermined vacuum (for example, under a high vacuum of 10 ⁻⁵ Pa or less). A vapor deposition chamber (also referred to as a film formation chamber or a vacuum chamber) 1 having a vapor deposition chamber (also referred to as a film formation chamber) 2 for forming a thin film by depositing a vapor deposition material M on the surface (lower surface) of K; The vapor deposition container 1, that is, a material supply device 3 that supplies (leads) the vapor deposition material M to the vapor deposition chamber 2 is provided.

First, the configuration in the deposition container 1 will be briefly described.
A holding device 5 for the substrate K, which is a member to be vapor deposited, is disposed on the upper portion of the vapor deposition chamber 1 in the vapor deposition chamber 2, and attached to the surface of the substrate K immediately on the side of the holding device 5. A film thickness sensor 6 for detecting the film thickness of the vapor deposition material M is disposed, and a shutter member 7 for supplying and stopping the vapor deposition material M to the substrate K is provided below the holding device 5. Yes. The holding device 5 is for continuously guiding a film as the substrate K to a vapor deposition region (a predetermined range corresponding to a nozzle portion at the tip of a material guide pipe to be described later), and unwinds the substrate K. And a guide roll 5c which is disposed between the rolls 5a and 5b and guides the vapor deposition surface of the substrate K to the vapor deposition region. . A turning roll 5d for moving the substrate K along the surface of the guide roll 5c is disposed in front of and behind the guide roll 5c (front and rear in the moving direction of the substrate). The shutter member 7 includes, for example, a rotating shaft body 7b that is rotated around a vertical axis by a rotating machine 7a such as a motor, and a substrate K that is attached to the upper end of the rotating shaft body 7b and held by the holding device 5. The shutter plate 7c is swung in a plane parallel to the vapor deposition surface (horizontal plane including the straight line at the lowermost end of the guide roll 5c). The shutter plate 7c is formed on the substrate K by the rotation of the rotating shaft 7b. It is swingable between a deposition stop position that covers the surface and a deposition permission position that opens the surface. The measured value from the film thickness sensor 6 is input to a vapor deposition rate control device 8 that controls a gas flow rate control valve described later.

Next, the material supply apparatus 3 which is the gist of the present invention will be described.
The material supply device 3 is disposed below the vapor deposition container 1 and is filled with a vapor deposition material M (for example, a powder having a particle size of 0.25 mm or less) filled with a vapor deposition material M (for example, crucible and (A similar bottomed cylindrical container is used) 11, a material guide line 12 as material guiding means provided in a vertical direction across the material filling container 11 and the deposition container 1, and the material filling A vibration applicator (vibration applying means) 13 that is attached to the bottom of the container 11 and applies vibration to the vapor deposition material M in the container 11, and an inert gas (for example, argon gas, helium) at the lower part in the material filling container 11. Gas, nitrogen gas, etc. are used, and if the vapor deposition material is not a fluorine compound, krypton, xenon, radon, etc. may be used.) G is supplied and vibration is applied by the vibration applicator 13. An inert gas supply device (inert gas supply means) 14 for guiding the vapor deposition material M into the material guide pipe 12, that is, upward (guidance), and a pipe halfway (described later) of the inert gas supply device 14. A gas supply amount control device 15 comprising a gas flow rate control valve 15a for controlling the supply amount of inert gas, that is, a gas flow rate, and a drive unit 15b for adjusting the opening degree of the gas flow rate control valve 15a. A vapor deposition amount control valve (also referred to as a vapor deposition material control valve) 16 that is disposed in the middle of the material guide conduit 12 and controls the supply amount (passage amount) of the vapor deposition material M; The vapor deposition material M transferred into the material guide pipe 12 is vaporized (sublimated or vaporized) by heating the installation part of the vapor deposition amount control valve 16 and the upper upper guide pipe 12a and the lower lower guide pipe 12b. ) Is to the heater (those constructed from the heating means) 17. Further, the heating part may be at least the lower guide tube 12b.

  Accordingly, the inert gas supply device 14 includes a gas supply pipe 21 connected to a gas supply port 11b formed at a lower end of a filling chamber 11a provided in the material filling container 11 and a tip of the gas supply pipe 21. A gas supply amount control device 15 including a gas flow rate control valve 15a provided in the middle, a gas filling cylinder 22 connected to the base end portion of the gas supply pipe 21 and capable of supplying an inert gas G, and the like. Yes.

  Although not specifically illustrated, the vibration applicator 13 includes, for example, a vibration body that is rotatably provided in the casing via an eccentric shaft, and a motor that rotates the eccentric shaft to vibrate the vibration body. It has been done. By the vibration applicator 13, the vapor deposition material M in the material filling container 11 is vibrated mainly in the vertical direction and floated, and is also vibrated in the horizontal direction to loosen the vapor deposition material M. That is, the floating of the vapor deposition material M is promoted by vibration.

  The heater 17 includes a heating wire (for example, a nichrome wire) wound around the material guide pipe 12 and a power source (not shown) that supplies electricity to the heating wire. .

  Further, the upper end of the material guide pipe 12, that is, the upper end of the upper guide pipe 12a is inserted into the deposition chamber 2 through the bottom wall of the deposition vessel 1, and the lower end is formed by a tubular connection such as a bellows. It is connected to the upper end opening of the material filling container 11 via the member 25. A nozzle portion 12c that discharges the vapor deposition material is provided at the upper end of the upper guide tube 12a.

  The vapor deposition amount control valve 16 described above is provided below the upper guide tube 12a, that is, between the upper guide tube 12a and the lower guide tube 12b. The heating wire of the heater 17 is wound around the deposition amount control valve 16 and its upper guide tube 12a and lower guide tube 12b. The main function of the vapor deposition amount control valve 16 is a flow path opening / closing function and, of course, a flow rate control function. The vapor deposition amount control valve 16 is normally opened and closed by a main controller of the vacuum vapor deposition apparatus. When the flow rate control function is used, the opening degree from the vapor deposition rate control apparatus 8 described above is used. It is controlled based on the command.

  In the above configuration, when a thin film of a predetermined material is formed on the surface (lower surface) of the film as the substrate K, the substrate K is held by the holding device 5 in the vapor deposition chamber 2, that is, the substrate K is the guide roll 7c. The inside of the vapor deposition chamber 2 is maintained at a predetermined degree of vacuum while being guided over the lower surface of the film.

  On the filling material supply side, the filling chamber 11a of the material filling container 11 is filled with powder of a predetermined vapor deposition material M, and the gas filling cylinder 22 is filled with an inert gas G, and the heater 17 is further filled. Thus, the material guide pipe 12 is heated to a predetermined temperature. Note that the inside of the material guide pipe 12 is also evacuated like the vapor deposition chamber 2.

  In this state, the vibration applicator 13 is operated to apply vibration to the material filling container 11 with a predetermined frequency and amplitude, for example, with a frequency of 1 Hz to 30 Hz and an amplitude of 3 mm or less, and a gas flow rate control valve. 15a is opened with a predetermined initial opening, and an inert gas (for example, argon gas is used) G is supplied from the gas supply pipe 21 into the filling chamber 11a with a predetermined supply amount.

  Then, the vapor deposition material M in the filling chamber 11a is vibrated and soars upward by the inert gas G supplied into the filling chamber 11a and moves upward in the material guide pipe 12 to be opened. The vapor deposition amount control valve 16 and the heater 17 disposed above the vapor deposition amount control valve 16 are heated to a predetermined temperature (specifically, the vaporization temperature of the vapor deposition material) and vaporize. The vaporized vapor deposition material M moves from the nozzle portion 12c into the vapor deposition chamber 2 and adheres to the surface of the substrate K to be deposited. That is, a thin film of vapor deposition material is formed on the surface of the substrate K. Of course, the substrate K is continuously formed by being wound on the winding roll 5b side at a predetermined speed along with the formation of the thin film. However, in some cases, the substrate K is intermittently (so-called batch type) every predetermined length. ) You may make it form.

  As for the deposition amount on the substrate K, a film thickness value, which is a measurement value from the film thickness sensor 6, is input to the deposition rate control device 8, where the deposition rate is obtained and a predetermined deposition is performed. An opening degree command is output to the drive unit 15b so that the gas flow rate control valve 15a is controlled so as to achieve a rate.

Here, the vapor deposition material will be described.
That is, as the vapor deposition material M, inorganic materials and organic materials are used. In particular, among organic materials, materials for organic EL are used, and saccharides are also used.

  In detail, inorganic materials include metals such as copper and aluminum (all metals and alloys, compounds containing metals), metalloids (compounds containing all metalloids and metalloids), halogen substances (all halogen substances) , Compounds containing halogen substances), carbon (C) or selenium (Se), compounds containing carbon (C), or compounds containing selenium (Se).

Examples of the compound containing the metal include gallium oxide (Ga ₂ O ₃ ) and tungsten oxide (WO ₃ ). Examples of the semimetal include boron (B), silicon (Si), and germanium (Ge). , Arsenic (As), antimony (Sb), tellurium (Te), polonium (Po), and the like are used. Examples of the compound containing the semimetal include boron oxide (B ₂ O ₃ ) and silicon oxide (SiO ₂ ). Etc. are used.

Further, as materials for organic EL, there are materials used for a hole injection layer, a hole transport layer, a light emitting layer, an electron injection layer, and an electron transport layer.
As a material for the hole injection layer and the hole transport layer, N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1-biphenyl] -4,4′-diamine is used. (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenylbenzidine (α-NPD) and the like.

Examples of the material for the light emitting layer include arylamine derivatives, anthracene derivatives, coumarin derivatives, and rubrene derivatives.
As materials for the electron injection layer and the electron transport layer, tris (8-quinolinolato) aluminum (Alq ₃ ), 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4 -Oxadiazole (PBD) and the like.

  Here, when the relationship between the vibration frequency and the deposition rate on the substrate surface is examined, it can be seen that the deposition rate is proportional to the vibration frequency, as shown in FIG. Further, as for the supply amount of the inert gas, if the amount is increased, the deposition rate increases, and if the amount is decreased, the deposition rate decreases. FIG. 3 is a graph showing the relationship between the supply amount of the inert gas and the vapor deposition rate. From this graph, it can be seen that the deposition rate increases in proportion to the supply amount of the inert gas. That is, it can be seen that the deposition rate can be controlled by the frequency and the amount of inert gas supplied. Of course, the deposition rate can be easily controlled by controlling the supply amount of the inert gas while keeping the frequency constant. Note that by keeping the frequency constant, the vapor deposition material can be leveled, so that the vapor deposition rate can be stabilized. Thus, the fact that the deposition rate can be controlled by the supply amount of the inert gas means that when the inert gas is not supplied as in the prior art, the deposition rate depends on the limit temperature of the deposition material. This means that the deposition rate can be made larger than the deposition rate depending on the limit temperature.

  According to the configuration of the vacuum vapor deposition apparatus, by supplying an inert gas to the material filling container 11, the vapor deposition material filled in the filling chamber 11 a is guided to the material guide conduit 12, and the material guide conduit 12 Since the vapor deposition material is vaporized by providing the heater 17, as compared with the conventional one in which the vapor deposition material is heated in the crucible and the heating amount in the crucible is controlled to control the vapor deposition rate. It is not necessary to heat the vapor deposition material in the crucible, that is, the material filling container 11, and therefore there is no need to worry about deterioration of the vapor deposition material. Also, since the deposition rate can be increased by increasing the amount of inert gas supplied, unlike the conventional case where it depends on the heating temperature of the deposition material, the critical temperature is not considered. Therefore, the deposition rate can be controlled in a wide range. That is, adverse effects due to heating of the vapor deposition material can be prevented.

  In the first embodiment, the inert gas supply device 14 has been described to supply the inert gas G from the lower side of the material filling container 11, but for example, as shown in FIG. 4, the filling chamber 11a. A porous plate member (mesh plate having a small mesh) 31 is disposed at a predetermined height from the bottom, and the gas supply pipe 21 is inserted from the side wall so that the inert gas G can be supplied to the lower space S thereof. Open the filling chamber 11a (of course, the gas supply pipe 21 may be directly opened to the lower space S) and supply the inert gas G from the lower portion of the filling chamber 11a to You may make it make the vapor deposition material M which consists of a body rise easily.

  Further, as shown in FIG. 5, by attaching a vibration applicator 13 ′ to the side surface of the material filling container 11 and supplying an inert gas G from a hole 11 c formed in the bottom wall portion of the material filling container 11. Similarly to the case of FIG. 4, the vapor deposition material may be easily raised.

Moreover, in the said Example 1, although demonstrated that the outer side of the lower side guide pipe 12b was heated, you may make it heat from the inside.
For example, as shown in FIG. 6, a heating wire 33 as a heater may be disposed on the inner surface of the lower guide tube 12b to heat the inside.

  Further, as shown in FIG. 7, a porous plate material such as a punching metal (which may be a wire mesh) 35 as a heater is disposed in the lower guide tube 12b and at an intermediate position in the height direction. The punching metal 35 may be heated by a heating source (not shown, for example, a resistance heating type heater provided on the punching metal).

  Further, as shown in FIG. 8, a window member 37 having translucency is provided on a side wall portion at an intermediate position in the height direction of the lower guide tube 12b, and a heating lamp 38 as a heater is provided on the window member 37. And the vapor deposition material M moving in the lower guide tube 12b may be heated by the radiated light from the heating lamp 38 (for example, a halogen lamp or an incandescent bulb is used).

  Further, in the first embodiment, the vibration applicator 13 is disposed on the outside of the bottom wall portion of the material filling container 11, but as shown in FIG. 9, the vibration applicator 13 ″ is provided at the bottom portion in the filling chamber 11a. In this case, in the case where the vibration applicator 13 ″ can be disposed separately from a vibration body (also referred to as a vibration generation section) and a driving section such as a motor, at least the vibration body is placed in the filling chamber. What is necessary is just to arrange | position in 11a.

  In the first embodiment, the material guide conduit 12 for heating is disposed (connected) immediately above the tubular connecting member 25 (downstream side in the moving direction of the vapor deposition material), but as shown in FIG. In addition, a heat insulating portion 41 made of a material that is not heated between them and has low thermal conductivity, that is, a material having good heat insulating properties, may be disposed. As this heat insulation part 41, the tubular body of the predetermined length comprised, for example with zirconia, glass, etc. is used.

  As described above, since the heat insulating portion 41 is disposed below the material guide pipe 12 to be heated, heat is transmitted from the material guide pipe 12 to the tubular connecting member 25 (upstream in the moving direction of the vapor deposition material). In other words, the temperature gradient region on the lower side (strictly, the temperature gradient in the non-heated region on the upstream side of the material guide line 12 where the heating is performed) is shortened. Can be suppressed.

  In the first embodiment, since the material guide conduit 12 to be heated is disposed (connected) immediately above the tubular connecting member 25, the vapor deposition material is liquefied in the temperature gradient region upstream of this. However, as shown in FIG. 11, a liquid reservoir 46 may be provided between the two as a heat insulating part to recover the liquid. The liquid storage portion 46 has a tubular body portion 46a and a truncated cone shape (so-called reverse hopper shape) provided inward of the tubular body portion 46a and upward from the lower end of the inner surface. The liquid storage chamber 47 is formed between the tubular body portion 46a and the liquid receiving tubular portion 46b. Therefore, the liquid in which the vapor deposition material is liquefied in the temperature gradient region upstream of the material guide conduit 12 falls and is stored in the liquid storage chamber 47. Thus, by collecting the liquid deposition material, the deposition material that has risen in the material filling container 11 can be smoothly moved to the deposition chamber 2. More specifically, it is possible to suppress the passage of the vapor deposition material that has risen due to the liquid adhering to the inner wall surface of the temperature gradient region, or to prevent the liquid from falling into the material filling container 11 to hinder the rise of the vapor deposition material. can do.

  Moreover, in the said Example 1, although the material guide conduit 12 heated is arrange | positioned (connected) just above the tubular connection member 25 (downstream side in the moving direction of vapor deposition material), FIGS. As shown in FIG. 4, a cooling mechanism 51 for reducing the temperature gradient region on the upstream side may be provided between the two. The cooling mechanism 51 includes a short pipe portion 52 disposed between the tubular connecting member 25 and the lower guide pipe 12b that is heated immediately above (downstream in the moving direction of the vapor deposition material), and the short pipe portion 52. The cooling section 53 is arranged across the pipe section 52 and a part of the lower guide pipe 12b and with a predetermined annular gap d with respect to the inner surface thereof.

  And this cooling part 53 is arrange | positioned at the pipe inner surface, the cyclic | annular cooling chamber 55 is formed by double pipe structure, and the partition plate 56 of an up-down direction is arrange | positioned in arbitrary positions, and the horizontal of the said cyclic | annular cooling chamber 55 is arrange | positioned. A cooling pipe 54 having a C-shaped cross section and a cooling pipe 54 connected to the cooling pipe 54 at a position near one side surface of the partition plate 56 of the annular cooling chamber 55 of the cooling pipe 54. A cooling fluid supply pipe 57 for supplying a cooling fluid (so-called brine) F and a cooling pipe F connected to the cooling pipe 54 at a position near the other side of the partition plate 56 of the annular cooling chamber 55 are discharged. The cooling fluid discharge pipe 58 includes a cooling fluid supply pipe 57 and a cooler 59 for circulating and supplying the cooling fluid via the cooling fluid discharge pipe 58. Further, in the annular cooling chamber 55, baffle plates 60 for moving the cooling fluid F meandering up and down are provided at predetermined intervals and so as to protrude alternately from above and below. An annular bottom plate 65 is provided at the bottom of the annular gap d to prevent the vapor deposition material and the inert gas from entering from the upstream side (downward).

  By the way, the reason why the annular gap d is provided is to prevent heat from being transmitted from the lower guide tube 12b to the cooling unit 53, and the annular gap d has a thin gap with each other having a narrow gap. A stainless steel plate (in FIG. 13 and FIG. 14, a state where only one sheet is arranged is indicated by an imaginary line, but actually, a plurality of sheets) 66 are arranged (for example, two to three layers). Therefore, radiant heat from the lower guide tube 12b is reliably prevented from being transmitted to the cooling unit 53.

  Therefore, the cooling fluid F supplied from the cooling fluid supply pipe 57 enters one end side of the annular cooling chamber 55 and moves up and down by the baffle plate 60 and moves to the other end side of the annular cooling chamber 55, that is, The surroundings are discharged from the cooling fluid discharge pipe 58 while cooling. The discharged cooling fluid F is cooled by the cooler 59 and then supplied to the annular cooling chamber 55 via the cooling fluid supply pipe 57 again. Thus, since the cooling mechanism 51, that is, a part of the lower guide tube 12b and the short tube portion 52 are cooled, the distance of the temperature gradient of the vapor deposition material can be shortened. In other words, by disposing a part of the cooling unit in the high-temperature heating unit and further shortening the distance of the temperature gradient of the vapor deposition material, liquefaction of the evaporated vapor deposition material, that is, the vaporized material can be suppressed.

  In the cooling unit 53, the baffle plate 60 is disposed in the annular cooling chamber 55. However, the baffle plate may be eliminated, and the inner surface of the pipe (the lower guide pipe 12b) may be replaced with a double pipe structure. A cooling pipe may be spirally wound around a part and the inner surface of the short pipe portion 52.

  In the first embodiment, the material guide pipe 12 to be heated is connected linearly (in the vertical direction) immediately above the tubular connecting member 25. As shown in FIG. 15, this material guide pipe is used. A material made of a tubular body having an L-shape in a side view (which may be inclined) that changes the movement path of the vapor deposition material that is disposed between the lower guide pipe 12b of the path 12 and the tubular connecting member 25 and moves upward. A movement path changing pipe (also referred to as a material movement path changing member) 61 may be disposed.

  The material movement path change pipe 61 includes a horizontal first movement path change pipe 61a having one end connected to the lower guide pipe 12b that is L-shaped in the side view (more precisely, an inverted L shape), The second moving path changing pipe 61b is connected to the other end portion of the first moving path changing pipe 61a and the tubular connecting member 25. Of course, the lower guide pipe 12b and the second moving path are used. The installation position of the change pipe 61b is shifted from each other in the horizontal direction. In addition, this material movement path | route change pipe | tube 61 is made into the non-heating area | region.

  In this way, since the material movement path changing pipe 61 having an L shape in side view is arranged between the lower guide pipe 12b and the tubular connecting member 25, the vapor deposition material in the material filling container 11 is heated by the heater 17. It is prevented from being affected by radiant heat from the lower guide tube 12b, which is a heating region provided with. That is, melting on the surface of the vapor deposition material in the material filling container 11 is eliminated, so that the vapor deposition rate can be stabilized and the flow rate of the inert gas can be reduced. In addition, when the material movement path changing pipe 61 is not provided, the high temperature heating part (lower guide pipe 12b) that is a heating region can be directly seen from the vapor deposition material side, so that the surface of the vapor deposition material is radiated from the high temperature heating part. Since the material is melted, and thus the rise of the material is suppressed in addition to the loss of the welding material, it is possible to prevent the deposition rate from becoming unstable and the flow rate of the inert gas to be supplied from increasing.

These modified examples shown in FIGS. 12 to 15 can also be applied to those shown in FIGS.
Although the description about the joint part of the pipe members constituting the movement path of the vapor deposition material in Example 1 was not particularly given, a flange joint is used as shown in the drawings (Example 2 and below). The same applies to Example 3.)

Next, a vacuum evaporation system according to Example 2 of the present invention will be described with reference to the drawings.
In the above-described first embodiment, the material-filled container is described as being vibrated by the vibration applicator (vibrating means). However, the vacuum vapor deposition apparatus of the second embodiment is configured to agitate the inside of the material-filled container instead of vibrating. It is what.

  Since the difference between the vacuum vapor deposition apparatus according to the second embodiment and the first embodiment is a part of the material filling container, in the second embodiment, the description will be given focusing on this portion and the same as the first embodiment. About the structural member, the same number is attached | subjected and the detailed description is abbreviate | omitted.

  Briefly, the material movement path changing pipe 61 described in the first embodiment is provided with a stirring device (stirring means) that can stir the vapor deposition material in the material filling container 11. Will be described mainly. In addition, since the material filling container is not vibrated, the tubular connecting member 25 is not provided.

  That is, as shown in FIG. 16, the stirring device 71 according to the second embodiment includes an electric motor 72 disposed on the other end side of a horizontal first path changing pipe portion 61a whose one end portion is connected to the lower guide tube 12b. And a rotating shaft 74 that is arranged in the vertical direction in the second path changing pipe portion 61b and whose upper end is connected to the electric motor 72, and a stirring blade attached to the lower end of this rotating shaft (an example of a stirring member. (It is not limited) and the stirring body 73 which consists of 75 is comprised.

  Therefore, by rotating the stirrer 73 by the electric motor 72 at the time of vapor deposition, the vapor deposition material in the material filling container 11 can be swung up and moved to the material guide conduit 12 side. The same effect as vibration can be obtained.

  That is, the vapor deposition material made of powder in the material filling container 11 is stirred by the stirring body 73 and supplied with an inert gas to be guided to the material guide pipe 12 and the heater 16 is provided in the material guide pipe 12. Since the vapor deposition material is vaporized, the crucible, that is, the material filling is compared with the conventional method in which the vapor deposition material is heated in the crucible and the deposition rate is controlled by controlling the heating amount in the crucible. There is no need to heat the vapor deposition material in the container 11, and therefore there is no need to worry about the deterioration of the vapor deposition material. Since the deposition rate can be increased by controlling the supply amount of the inert gas, that is, by increasing the supply amount of the inert gas, it depends on the heating temperature of the deposition material as in the past. Unlike the case, it is not necessary to consider the limit temperature, and therefore the deposition rate can be controlled over a wide range. That is, adverse effects due to heating of the vapor deposition material can be prevented.

In the above description, the stirring device 71 is provided instead of the vibration applicator. However, the stirring device 71 and the vibration applicator may be provided together. In this case, the tubular connecting member 25 is required.
In this case, since stirring is performed together with vibration, when the deposition material becomes a lump by vibration, the lump can be loosened.

In the second embodiment, the same configuration as that of the modified examples according to FIGS. 4 to 8 described in the first embodiment can be applied.
Furthermore, also in the second embodiment, it is possible to apply the modification (shown in FIG. 10) provided with the heat insulating portion described in the first embodiment and the modification (shown in FIG. 11) provided with the liquid reservoir. it can.

Hereinafter, the configuration of the vacuum vapor deposition apparatus in the case where the heat insulating portion is provided will be briefly described with reference to FIG.
That is, between the material movement path change pipe 61 and the material guide pipe 12, similarly to the modified example described with reference to FIG. 15 of the first embodiment, heating is not performed and thermal conductivity is low, that is, heat insulation. A heat insulating portion 76 made of a good material is disposed. As the heat insulating portion 76, for example, a tubular body having a predetermined length made of zirconia, glass or the like is used.

  As described above, since the heat insulating portion 76 is arranged on the upstream side of the material guide pipe 12 to be heated, heat is prevented from being transferred from the material guide pipe 12 to the material movement path changing pipe 61, that is, on the lower side. The temperature gradient region is shortened, and therefore the amount of liquid of the vapor deposition material by heating can be reduced.

Hereinafter, the configuration of the vacuum vapor deposition apparatus provided with the liquid reservoir will be briefly described with reference to FIG.
That is, a liquid reservoir 78 is provided between the material movement path changing pipe 61 and the material guide pipe 12 in the same manner as the modified example described with reference to FIG. You may make it collect | recover. A connecting pipe 80 is provided between the liquid reservoir 78 and the material movement path changing pipe 61 for connecting the two.

  The liquid storage part 78 has a tubular body part 78a and a truncated cone shape (so-called reverse hopper shape) provided inward of the tubular body part 78a and upward from the lower end of the inner surface. The liquid storage chamber 79 is formed between the tubular body 78a and the liquid receiving cylindrical portion 78b. Therefore, the liquid in which the vapor deposition material is liquefied in the temperature gradient region upstream of the material guide pipe 12 falls and is stored in the liquid storage chamber 79. Thus, by collecting the liquid deposition material, the deposition material that has risen in the material filling container 11 can be smoothly moved to the deposition chamber 2.

Furthermore, the vacuum evaporation system which concerns on Example 3 of this invention is demonstrated based on drawing.
In the first embodiment described above, the material-filled container has been described as being vibrated by the vibration applicator. However, in the vacuum deposition apparatus of the third embodiment, the material-filled container is rotated instead of being vibrated.

  The difference between the vacuum vapor deposition apparatus according to the third embodiment and the first embodiment is a part of the material filling container. Therefore, in the third embodiment, the description will be given focusing on this portion and the same as the first embodiment. About the structural member, the same number is attached | subjected and the detailed description is abbreviate | omitted.

  Briefly, a material filling container is connected to the material guide pipe described in the first embodiment, and a container rotating means for rotating the material filling container is provided. Here, the container rotating means is the center. I will explain. In addition, since a material filling container is not vibrated, the tubular connection member is not provided.

  That is, as shown in FIGS. 19 and 20, the lower guide tube 12 ′ b of the material guide tube 12 in the vacuum evaporation apparatus according to the third embodiment has a predetermined angle θ (for example, 90 ° exceeding 0 °). A bottomed cylindrical container holder 81 that can hold the material-filled container 82 in a rotatable manner is connected to the lower end portion of the container. The lower guide tube 12'b may not be bent.

  That is, inside the container holding body 81, the material filling container 82 is rotatable from the cylindrical body 82a having upper and lower ends opened and the porous plate 82b attached to the lower end opening of the cylindrical body 82a. And a gap δ having a predetermined height from the bottom wall portion. For example, an electric motor 83 is attached to the outer surface of the bottom wall portion of the container holder 81 as a container rotating means, and the output shaft 83a of the electric motor 83 is inserted through the bottom wall portion of the container holder 81 to fill the material-filled container 82. The perforated plate 82b is connected. A spiral blade 84 is arranged inside the material filling container 82. Of course, a gas supply pipe 21 for supplying an inert gas is connected to the lower portion of the side surface of the container holder 81, and of course, the connection port 81a is provided so as to communicate with the gap δ. .

  Therefore, at the time of vapor deposition, an inert gas is supplied from the gas supply pipe 21 into the container holding body 81 and ejected from the porous plate 82b into the cylindrical body 82a. Since the vapor deposition material in 82 can be swung up and moved to the material guide pipe 12 side, the same effect as the vibration in the first embodiment described above can be obtained.

  That is, an inert gas is supplied while rotating the material filling container 82 to guide the vapor deposition material in the material filling container 82 to the material guide pipe 12, and a heater 17 is provided in the material guide pipe 12. Since the vapor deposition material is vaporized, the crucible, that is, the material-filled container, as compared with the conventional one, in which the vapor deposition material is heated in the crucible and the vapor deposition rate is controlled by controlling the heating amount in the crucible. There is no need to heat the deposition material at 82, so there is no need to worry about degradation of the deposition material. Since the deposition rate can be increased by controlling the supply amount of the inert gas, that is, by increasing the supply amount of the inert gas, it depends on the heating temperature of the deposition material as in the past. Unlike the case, it is not necessary to consider the limit temperature, and therefore the deposition rate can be controlled over a wide range. That is, adverse effects due to heating of the vapor deposition material can be prevented. In addition, since the spiral blade 84 is arrange | positioned in the material filling container 82, when the said material filling container 82 is rotated, the rise of vapor deposition material can be accelerated | stimulated. In some cases, the spiral blade 84 may be eliminated.

In the third embodiment, the same configuration as that of the modified examples according to FIGS. 6 to 8 described in the first embodiment can be applied.
Also in the third embodiment, the same configuration as that of the modification according to FIGS. 12 to 14 described in the first embodiment can be applied.

  That is, a cooling mechanism can be applied to the lower guide pipe 12 ′ b of the material guide pipe 12. More specifically, the lower guide tube 12 ′ b to be heated is shortened, and between the lower guide tube 12 ′ b and the connection tube newly provided between the container holder 81. A short pipe portion disposed, and a cooling portion disposed over the short pipe portion and a part of the lower guide tube 12′b and having a predetermined annular gap with respect to the inner surface thereof. Will be. The configuration of the cooling unit is the same as that described with reference to FIGS.

Further, also in the third embodiment, the modification (shown in FIG. 21) provided with the heat insulating portion described in the first embodiment and the modification (shown in FIG. 22) provided with the liquid reservoir may be applied. it can.
Hereinafter, the configuration of the vacuum vapor deposition apparatus in the case where the heat insulating portion is provided will be briefly described with reference to FIG.

  That is, between the lower guide pipe 12′b of the material guide pipe 12 and the container holding body 81, heating is not performed and heat is not generated as in the modified example described with reference to FIG. A heat insulating portion 91 made of a material having a low conductivity, that is, a good heat insulating property is disposed. As this heat insulation part 91, the tubular body of the predetermined length comprised, for example with zirconia, glass, etc. is used. The upper straight portion 12'bu of the bent lower guide tube 12'b may be used as an upper guide tube as a heating region, and the bent tube portion 12'bd including a bent portion may be used as a heat insulating portion.

  As described above, since the heat insulating portion 91 is disposed on the upstream side of the material guide pipe 12 to be heated, it is possible to prevent heat from being transmitted from the material guide pipe 12 to the material filling container 82 side. The gradient region is shortened, so that the amount of liquid of the vapor deposition material by heating can be reduced.

Further, the configuration of the vacuum vapor deposition apparatus in the case where the liquid reservoir is provided will be briefly described with reference to FIG.
In other words, a liquid reservoir 96 is provided between the material guide line 12 and the material filling container 82 in the same manner as the modified example described with reference to FIG. You may make it do. Since the container holder 81 that holds the material-filled container 82 is provided at an inclination, a bent connection pipe 98 is provided between the liquid reservoir 96 and the container holder 81.

  The liquid storage portion 96 has a tubular body portion 96a and a truncated cone shape (so-called reverse hopper shape) provided inward of the tubular body portion 96a and upward from the lower end of the inner surface. The liquid storage chamber 97 is formed between the tubular body 96a and the liquid receiving cylindrical portion 96b.

  Therefore, the liquid obtained by liquefying the vapor deposition material in the temperature gradient region on the upstream side of the material guide pipe 12 falls and is stored in the liquid storage chamber 97. Thus, by collecting the liquid deposition material, the deposition material that has risen in the material filling container 11 can be smoothly moved to the deposition chamber 2.

  In the first to third embodiments, the case where the substrate is a film has been described. For example, as shown by the phantom lines in FIGS. 1, 15, 16, 16, and 19, the substrate K ′ is The plate may be made of stainless steel or silicon having a rectangular shape in plan view. Of course, in this case, the vapor deposition operation is performed batchwise.

  In Examples 1 to 3, the material guide pipe and the material filling container excluding the tip are arranged outside the vapor deposition container. However, the material guide pipe or the material guide is used as necessary. The pipe line and the material-filled container may be disposed inside the deposition container. Further, it has been described that the deposition is performed on the lower surface of the substrate disposed horizontally in the deposition container. The present invention can be applied to a device that is disposed and vapor-deposited on a vertical surface of a substrate, or a device that is vapor-deposited on an upper surface of a substrate that is horizontally disposed.

The configuration of the vacuum vapor deposition apparatus including the configuration in this case in the configurations according to the first to third embodiments will be described as follows.
That is, this vacuum vapor deposition apparatus is a vapor deposition container for forming a thin film by depositing a vapor deposition material on the surface of a vapor deposition member under vacuum, and a material supply for guiding the vapor deposition material to the vapor deposition member in the vapor deposition container A device,
The material supply device
A material filling container filled with a powder deposition material;
An inert gas supply means for supplying an inert gas into the material-filled container;
Material guiding means for guiding the vapor deposition material to the vapor deposition member;
A deposition material control means for controlling the supply amount of the deposition material guided to the deposition target member;
The material guide means or a heating means for vaporizing the vapor deposition material guided by the material guide means by heating the inside of the material guide means,
Further, as the vapor deposition material control means, a gas flow rate control valve that is provided in the inert gas supply means and controls the supply amount of the inert gas is used.

Examples 4 to 6 will be further described below.
In the vacuum vapor deposition apparatus shown in the first to third embodiments, it has been described that the evaporation amount of the vapor deposition material is controlled on the basis of the vibration and the supply amount of the inert gas. The passage amount (deposition amount) of the deposition material (evaporated deposition material) in the material guide pipe is controlled.

  In addition, although the structure of the vacuum evaporation system concerning Examples 4-6 is almost the same as what was demonstrated in Examples 1-3 mentioned above, it demonstrates again.

Hereinafter, the vacuum evaporation system concerning Example 4 of the present invention is explained based on a drawing.
As shown in FIG. 23, this vacuum vapor deposition apparatus uses a thin film substrate (specifically, a film) as a vapor deposition member under a predetermined vacuum (for example, under a high vacuum of 10 ⁻⁵ Pa or less). ) A deposition vessel (also referred to as a deposition chamber or a vacuum chamber) 101 having a deposition chamber (also referred to as a deposition chamber) 102 for depositing a deposition material M on the surface (lower surface) of K to form a thin film; The vapor deposition container 1, that is, a material supply device 103 that supplies (leads) the vapor deposition material M to the vapor deposition chamber 102 is provided.

First, the configuration in the vapor deposition container 101 will be briefly described.
A holding device 105 for the substrate K, which is a member to be deposited, is disposed at the upper part of the vapor deposition chamber 101 of the vapor deposition container 101, and is attached to the surface of the substrate K immediately on the side of the holding device 105. A film thickness sensor 106 for detecting the film thickness of the vapor deposition material M is disposed, and a shutter member 107 for supplying and stopping the vapor deposition material M to the substrate K is provided below the holding device 105. Yes. The holding device 105 is for continuously guiding a film as the substrate K to a vapor deposition region (a predetermined range corresponding to a nozzle portion at the tip of a material guide pipe to be described later), and unwinds the substrate K. A winding roll 105a for winding the substrate K, and a guide roll 105c that is disposed between the two rolls 105a and 105b and guides the deposition surface of the substrate K to the deposition region. . A turning roll 105d for moving the substrate K along the surface of the guide roll 105c is disposed before and after the guide roll 105c (front and rear in the moving direction of the substrate). The shutter member 107 includes, for example, a rotating shaft body 107b that is rotated around a vertical axis by a rotating machine 107a such as a motor, and a substrate K that is attached to the upper end of the rotating shaft body 107b and held by the holding device 105. The shutter plate 107c is swung in a plane parallel to the vapor deposition surface (horizontal plane including the straight line at the lowermost end of the guide roll 105c), and the shutter plate 107c is formed on the substrate K by the rotation of the rotating shaft 107b. It is swingable between a deposition stop position that covers the surface and a deposition permission position that opens the surface. The measured value from the film thickness sensor 106 is input to a deposition rate control device 108 that controls a deposition amount control valve to be described later.

Next, the material supply apparatus 103 which is the gist of the present invention will be described.
This material supply device 103 is disposed below the deposition container 101 and is filled with a material filling container (for example, a crucible and the like) filled with a deposition material M in a powder form (for example, a powder having a particle size of 0.25 mm or less). (Similar bottomed cylindrical container is used) 111, a material guide line 112 as a material guiding means provided in a vertical direction across the material filling container 111 and the deposition container 101, and the material filling A vibration imparting device (vibration imparting means) 113 that is attached to the bottom of the container 111 and vibrates the vapor deposition material M in the container 111, and an inert gas (for example, argon gas, helium) in the lower part in the material filling container 111. Gas, nitrogen gas, etc. are used, and if the vapor deposition material is not a fluorine compound, krypton, xenon, radon, etc. may be used.) An inert gas supply device (inert gas supply means) 114 for guiding (guiding) the vapor deposition material M vibrated by the vessel 113 into the material guide pipe 112, that is, upward, and the material guide pipe A vapor deposition amount control valve (also referred to as a vapor deposition material control valve) 115a that is arranged in the middle of 112 to control the passage amount (vapor deposition amount) of the vapor deposition material M and a drive unit that adjusts the opening of the vapor deposition amount control valve 115a. A deposition amount control device 115 (evaporation material control means) 115b, an installation portion of the deposition amount control valve 115a in the material guide pipe 112, an upper guide pipe 112a on the upper side thereof, and a lower guide pipe 112b on the lower side thereof. It is composed of a heater (heating means) 116 that evaporates (sublimates or evaporates) the vapor deposition material M transferred into the material guide pipe 112 by heating. In addition, the heating portion may be at least the lower guide tube 112b (the lower guide tube 112b is heated because the deposition rate M is controlled by the deposition amount control valve 115a, so that the deposition material M is upstream. Need to vaporize).

  Although not specifically illustrated, the vibration applicator 113 includes, for example, a vibration body that is rotatably provided in the casing via an eccentric shaft, and a motor that rotates the eccentric shaft to vibrate the vibration body. It has been done. By the vibration applicator 113, the deposition material M in the material filling container 111 is vibrated mainly in the vertical direction and floated, and is also vibrated in the horizontal direction to loosen the deposition material M. That is, the floating of the vapor deposition material M is promoted by vibration.

  The heater 116 includes a heating wire (for example, a nichrome wire) wound around the material guide pipe 112 and a power source (not shown) that supplies electricity to the heating wire. .

  The inert gas supply device 114 is connected to a gas supply port 111b formed at the lower end of a filling chamber 111a provided in the material filling container 111 and a gas flow rate control valve 122 is provided on the way. The gas supply pipe 121 and a gas filling cylinder 123 connected to the base end portion of the gas supply pipe 121 and capable of supplying the inert gas G are included.

  In addition, the upper end of the material guide pipe 112, that is, the upper end of the upper guide pipe 112a is inserted into the deposition chamber 102 through the bottom wall of the deposition vessel 101, and the lower end is a tubular connection such as a bellows. It is connected to the upper end opening of the material filling container 111 via the member 125. A nozzle portion 112c that discharges the vapor deposition material is provided at the upper end of the upper guide tube 112a.

  The vapor deposition amount control valve 115a described above is provided below the upper guide tube 112a, that is, between the upper guide tube 112a and the lower guide tube 112b. The heating wire of the heater 116 is wound around the deposition amount control valve 115a and the upper guide tube 112a and the lower guide tube 112b. The vapor deposition amount control valve 115a is controlled based on the opening degree command from the vapor deposition rate control device 108 described above.

  In the above configuration, when a thin film of a predetermined material is formed on the surface (lower surface) of the film as the substrate K, the substrate K is held by the holding device 105 in the vapor deposition chamber 102, that is, the substrate K is the guide roll 107c. The inside of the vapor deposition chamber 102 is maintained at a predetermined degree of vacuum while being guided over the lower surface of the film.

  On the filling material supply side, the filling chamber 111a of the material filling container 111 is filled with powder of a predetermined vapor deposition material M, and the gas supply pipe 121 is filled with the inert gas G, and the heater 116 is further filled. Thus, the material guide pipe 112 is heated to a predetermined temperature. Note that the material guide pipe 112 is also evacuated in the same manner as the vapor deposition chamber 102.

  In this state, the vibration applicator 113 is operated to apply vibration to the material filling container 111 with a predetermined vibration frequency and amplitude, for example, with a vibration frequency of 1 Hz to 30 Hz and an amplitude of 3 mm or less, and a gas flow rate control valve. 122 is opened, and an inert gas (for example, argon gas is used) G is supplied from the gas supply pipe 121 into the filling chamber 111a with a predetermined supply amount.

  Then, the vapor deposition material M in the filling chamber 111a is vibrated and soars upward by the inert gas G supplied into the filling chamber 111a and moves upward in the material guide pipe 112, and the amount of vapor deposition is increased. It is vaporized by being heated to a predetermined temperature (specifically, the vaporization temperature of the vapor deposition material) by the control valve 115a and the heater 116 disposed in the upper part thereof. The vaporized vapor deposition material M moves from the nozzle part 112c into the vapor deposition chamber 102 and adheres to the surface of the substrate K and is deposited. That is, a thin film of vapor deposition material is formed on the surface of the substrate K. Of course, the substrate K is continuously formed by being wound on the winding roll 105b side at a predetermined speed along with the formation of the thin film. However, in some cases, the substrate K is intermittently (so-called batch type) every predetermined length. ) You may make it form.

  As for the deposition amount on the substrate K, a film thickness value, which is a measurement value from the film thickness sensor 106, is input to the deposition rate control device 108, where the deposition rate is obtained and a predetermined deposition is performed. An opening degree command is output to the drive unit 115b to control the deposition amount control valve 115a so that the rate is reached.

Here, the vapor deposition material will be described.
That is, as the vapor deposition material M, inorganic materials and organic materials are used. In particular, among organic materials, materials for organic EL are used, and saccharides are also used.

  In detail, inorganic materials include metals such as copper and aluminum (all metals and alloys, compounds containing metals), metalloids (compounds containing all metalloids and metalloids), halogen substances (all halogen substances) , Compounds containing halogen substances), carbon (C) or selenium (Se), compounds containing carbon (C), or compounds containing selenium (Se).

Examples of the compound containing the metal include gallium oxide (Ga ₂ O ₃ ) and tungsten oxide (WO ₃ ). Examples of the semimetal include boron (B), silicon (Si), and germanium (Ge). , Arsenic (As), antimony (Sb), tellurium (Te), polonium (Po), and the like are used. Examples of the compound containing the semimetal include boron oxide (B ₂ O ₃ ) and silicon oxide (SiO ₂ ). Etc. are used.

Further, as materials for organic EL, there are materials used for a hole injection layer, a hole transport layer, a light emitting layer, an electron injection layer, and an electron transport layer.
As a material for the hole injection layer and the hole transport layer, N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1-biphenyl] -4,4′-diamine is used. (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenylbenzidine (α-NPD) and the like.

Examples of the material for the light emitting layer include arylamine derivatives, anthracene derivatives, coumarin derivatives, and rubrene derivatives.
As materials for the electron injection layer and the electron transport layer, tris (8-quinolinolato) aluminum (Alq ₃ ), 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4 -Oxadiazole (PBD) and the like.

  Here, when the relationship between the vibration frequency and the vapor deposition rate on the substrate surface is examined, it can be seen that the vapor deposition rate is proportional to the vibration frequency, as shown in FIG. That is, it can be seen that the deposition rate can be controlled even when the frequency is controlled. Note that by keeping the frequency constant, the vapor deposition material can be leveled, so that the vapor deposition rate can be stabilized.

  According to the configuration of the vacuum vapor deposition apparatus, by supplying an inert gas to the material filling container 111, the vapor deposition material filled in the filling chamber 111a is guided to the material guide conduit 112, and the material guide conduit 112 Since the vapor deposition material is vaporized by providing the heater 116, as compared with the conventional one in which the vapor deposition material is heated in the crucible and the heating amount in the crucible is controlled to control the vapor deposition rate. There is no need to heat the vapor deposition material in the crucible, ie, the material filling container 111, and therefore there is no need to worry about the deterioration of the vapor deposition material.

  By the way, in the said Example 4, although the inert gas G was supplied in the inert gas supply apparatus 114 from the lower part side of the material filling container 111, as shown, for example in FIG. 25, the filling chamber 111a is shown. A porous plate member (mesh plate with small eyes) 131 is arranged at a predetermined height from the bottom, and a gas supply pipe 121 is inserted from the side wall so that the inert gas G can be supplied to the lower space S. Open the filling chamber 111a (of course, the gas supply pipe 121 may be directly opened into the lower space S), and supply the inert gas G from the lower portion of the filling chamber 111a to You may make it make the vapor deposition material M which consists of a body rise easily.

  Further, as shown in FIG. 26, by attaching a vibration applicator 113 ′ to the side surface of the material filling container 111 and supplying an inert gas G from a hole 111 c formed in the bottom wall portion of the material filling container 111. Similarly to the case of FIG. 25, the vapor deposition material may be made to rise easily.

Moreover, in the said Example 4, although demonstrated that the outer side of the lower side guide pipe 112b was heated, you may make it heat from the inside.
For example, as shown in FIG. 27, a heating wire 133 as a heater may be disposed on the inner surface of the lower guide tube 112b and heated inside.

  As shown in FIG. 28, a porous plate material such as a punching metal (which may be a wire mesh) 135 as a heater is disposed in the lower guide tube 112b and at an intermediate position in the height direction. The punching metal 135 may be heated by a heating source (not shown, for example, a resistance heating heater provided on the punching metal).

  Further, as shown in FIG. 29, a window member 137 having translucency is provided on a side wall portion at an intermediate position in the height direction of the lower guide tube 112b, and a heating lamp (as a heater) is provided on the window member 137. (For example, a halogen lamp, an incandescent bulb or the like is used) 138 may be disposed, and the vapor deposition material M moving in the lower guide tube 112b may be heated by the radiated light from the heating lamp 138.

  Further, in the fourth embodiment, the vibration applicator 113 is arranged on the bottom wall portion of the material filling container 111 and on the outside thereof. However, as shown in FIG. 30, the vibration applicator 113 ″ is placed on the bottom portion in the filling chamber 111a. In this case, in the case where the vibration applicator 113 ″ can be disposed separately from a vibrating body (also referred to as a vibration generating section) and a driving section such as a motor, at least the vibrating body is placed in the filling chamber. What is necessary is just to arrange | position in 111a.

  In the fourth embodiment, the material guide conduit 112 for heating is disposed (connected) immediately above the tubular connecting member 125 (downstream in the moving direction of the vapor deposition material), but as shown in FIG. In addition, a heat insulating portion 141 made of a material that is not heated between them and has low thermal conductivity, that is, a good heat insulating property may be disposed. As the heat insulating portion 141, for example, a tubular body having a predetermined length made of zirconia, glass or the like is used.

  As described above, since the heat insulating portion 141 is disposed below the material guide pipe 112 to be heated, heat is transmitted from the material guide pipe 112 to the tubular connecting member 125 (upstream in the moving direction of the vapor deposition material). In other words, the temperature gradient region on the lower side (strictly, the temperature gradient in the non-heated region on the upstream side of the material guide line 112 where the heating is performed) is shortened, and thus the liquefaction of the vapor deposition material by heating is reduced. Can be suppressed.

  In the fourth embodiment, since the material guide pipe 112 that is heated is disposed (connected) immediately above the tubular connecting member 125, the vapor deposition material is liquefied in the temperature gradient region upstream of this. However, as shown in FIG. 32, a liquid reservoir 146 may be provided between the two as a heat insulating part to recover the liquid. The liquid storage portion 146 has a tubular body portion 146a and a truncated cone shape (so-called reverse hopper shape) provided inward of the tubular body portion 146a and upward from the lower end of the inner surface. The liquid storage chamber 147 is formed between the tubular body portion 146a and the liquid reception cylindrical portion 146b. Therefore, the liquid in which the vapor deposition material is liquefied in the temperature gradient region upstream of the material guide pipe 112 falls and is stored in the liquid storage chamber 147. Thus, by collecting the liquid deposition material, the deposition material that has risen in the material filling container 111 can be smoothly moved to the deposition chamber 102. More specifically, it is possible to suppress the passage of the deposition material that has flowed up due to the liquid adhering to the inner wall surface of the temperature gradient region, or the liquid from falling into the material-filled container 111 to inhibit the rise of the deposition material. can do.

  Moreover, in the said Example 4, although the material guide conduit 112 heated is arrange | positioned (connected) just above the tubular connection member 125 (downstream side in the moving direction of vapor deposition material), FIG. 33-FIG. As shown in FIG. 4, a cooling mechanism 151 for reducing the temperature gradient region on the upstream side may be provided between the two. The cooling mechanism 151 includes a short pipe portion 152 disposed between the tubular connecting member 125 and a lower guide pipe 112b that is heated immediately above (downstream in the moving direction of the vapor deposition material), and the short pipe portion 152. The cooling section 153 is arranged over the pipe section 152 and a part of the lower guide pipe 112b and with a predetermined annular gap d with respect to the inner surface thereof.

  And this cooling part 153 is arrange | positioned at the pipe inner surface, the cyclic | annular cooling chamber 155 is formed by a double pipe structure, and the partition plate 156 of an up-down direction is arrange | positioned in arbitrary positions, The horizontal of the said annular cooling chamber 155 is provided. A cooling pipe 154 having a C-shaped cross section and a cooling pipe 154 connected to the cooling pipe 154 at a position closer to one side surface of the partition plate 156 of the annular cooling chamber 155 of the cooling pipe 154 such as cooling water A cooling fluid supply pipe 157 that supplies a cooling fluid (so-called brine) F and a cooling pipe F that is connected to the cooling pipe body 154 at a position closer to the other side surface of the partition plate 156 of the annular cooling chamber 155 are discharged. The cooling fluid discharge pipe 158 includes a cooling fluid supply pipe 157 and a cooler 159 for circulating and supplying the cooling fluid via the cooling fluid discharge pipe 158. In the annular cooling chamber 155, a plurality of baffle plates 160 that meander and move the cooling fluid F up and down are provided at predetermined intervals so as to protrude alternately from above and below. An annular bottom plate 165 is provided at the bottom of the annular gap d to prevent the vapor deposition material and the inert gas from entering from the upstream side (downward).

  By the way, the reason why the annular gap d is provided is to prevent heat from being transmitted from the lower guide tube 112b to the cooling unit 153, and the annular gap d has a thin gap between each other and has a thin gap. A stainless steel plate (in FIG. 34 and FIG. 35, a state in which only one sheet is disposed is indicated by an imaginary line, but actually, a plurality of sheets 166 are disposed) Therefore, the radiant heat from the lower guide tube 112b is reliably prevented from being transmitted to the cooling unit 53.

  Therefore, the cooling fluid F supplied from the cooling fluid supply pipe 157 enters one end side of the annular cooling chamber 155 and moves up and down by the baffle plate 160 and moves to the other end side of the annular cooling chamber 155. The cooling fluid discharge pipe 158 is discharged while cooling the surroundings. The discharged cooling fluid F is cooled by the cooler 159 and then supplied to the annular cooling chamber 155 via the cooling fluid supply pipe 157 again. Thus, since the cooling mechanism 151, that is, a part of the lower guide tube 112b and the short tube portion 152 are cooled, the distance of the temperature gradient of the vapor deposition material can be shortened. In other words, by disposing a part of the cooling unit in the high-temperature heating unit and further shortening the distance of the temperature gradient of the vapor deposition material, liquefaction of the evaporated vapor deposition material, that is, the vaporized material can be suppressed.

  In the cooling unit 153, the baffle plate 160 is disposed in the annular cooling chamber 155. However, the baffle plate may be eliminated, and the inner surface of the pipe (the lower guide pipe 112b of the lower guide pipe 112b may be replaced with a double pipe structure). A cooling pipe may be spirally wound around a part and the inner surface of the short pipe portion 152.

  In the fourth embodiment, the material guide pipe 112 that is heated immediately above the tubular connecting member 125 is connected linearly (in the vertical direction). However, as shown in FIG. A material made of a tubular body having an L-shape (which may be inclined) as viewed from the side, which is arranged between the lower guide tube 112b of the path 112 and the tubular connecting member 125 and changes the movement path of the vapor deposition material that moves upward. A movement path changing pipe (also referred to as a material movement path changing member) 161 may be arranged.

  The material movement path change pipe 161 includes a horizontal first movement path change pipe 161a having one end connected to a lower guide pipe 112b that is L-shaped in a side view (more precisely, an inverted L shape), The first moving path changing pipe 161a is composed of the other end of the first moving path 161a and a vertical second moving path changing pipe 161b connected to the tubular connecting member 125. Of course, the lower guide pipe 112b and the second moving path are connected. The installation position of the change pipe 161b is shifted from each other in the horizontal direction. In addition, this material movement path | route change pipe | tube 161 is made into the non-heating area | region.

  As described above, since the material movement path changing pipe 161 having an L shape in the side view is arranged between the lower guide pipe 112b and the tubular connecting member 125, the vapor deposition material in the material filling container 111 is heated by the heater 116. It is prevented from being affected by radiant heat from the lower guide tube 112b, which is a heating region provided with. That is, melting on the surface of the vapor deposition material in the material filling container 111 is eliminated, so that the vapor deposition rate can be stabilized and the flow rate of the inert gas can be reduced. In addition, when the material movement path changing pipe 161 is not provided, the surface of the vapor deposition material can be seen from the high temperature heating section (lower guide pipe 112b) that is the heating region directly from the vapor deposition material side, due to the radiant heat from the high temperature heating section. Since the material is melted, and thus the rise of the material is suppressed in addition to the loss of the welding material, it is possible to prevent the deposition rate from becoming unstable and the flow rate of the inert gas to be supplied from increasing.

These modifications shown in FIGS. 33 to 36 can also be applied to those shown in FIGS.
Although the description about the joint part of the pipe members constituting the moving path of the vapor deposition material in Example 4 was not particularly given, a flange joint was used as shown in the drawings (Example 5 and below). The same applies to Example 6.)

Next, a vacuum evaporation system according to Embodiment 5 of the present invention will be described with reference to the drawings.
In the above-described fourth embodiment, the material-filled container has been described as being vibrated by the vibration applicator (vibrating means). However, the vacuum deposition apparatus of the fifth embodiment is configured to stir the material-filled container instead of vibrating. It is what.

  The difference between the vacuum vapor deposition apparatus according to the fifth embodiment and the first embodiment is a portion of the material filling container. In the fifth embodiment, description will be given focusing on this portion and the same as the fourth embodiment. About the structural member, the same number is attached | subjected and the detailed description is abbreviate | omitted.

  Briefly, the material moving path changing pipe 161 described in the fourth embodiment is provided with a stirring device (stirring means) capable of stirring the vapor deposition material in the material filling container 111. Here, the stirring device Will be described mainly. Since the material filling container is not vibrated, the tubular connecting member 125 is not provided.

  That is, as shown in FIG. 37, the stirrer 171 according to the fifth embodiment includes an electric motor 172 disposed on the other end side of the horizontal first path changing pipe portion 161a whose one end portion is connected to the lower guide tube 112b. And a rotating shaft 174 arranged in the vertical direction in the second path changing pipe portion 161b and having an upper end connected to the electric motor 172, and a stirring blade attached to the lower end of the rotating shaft (an example of a stirring member. And a stirrer 173 made of 175).

  Therefore, by rotating the stirrer 173 by the electric motor 172 at the time of vapor deposition, the vapor deposition material in the material filling container 111 can be swung up and moved to the material guide conduit 112 side, and thus in the above-described fourth embodiment. The same effect as vibration can be obtained.

  That is, the vapor deposition material made of powder in the material filling container 111 is stirred by the stirring body 173 and supplied with an inert gas to be guided to the material guide pipe 112 and a heater 116 is provided in the material guide pipe 112. Since the vapor deposition material is vaporized, the crucible, that is, the material filling is compared with the conventional method in which the vapor deposition material is heated in the crucible and the deposition rate is controlled by controlling the heating amount in the crucible. There is no need to heat the vapor deposition material in the container 111, and therefore there is no need to worry about the deterioration of the vapor deposition material.

In the above description, the stirring device 171 is provided instead of the vibration applicator. However, the stirring device 171 and the vibration applicator may be provided together. In this case, the tubular connecting member 125 is required.
In this case, since stirring is performed together with vibration, when the deposition material becomes a lump by vibration, the lump can be loosened.

And also in the present Example 5, the structure similar to the modification based on FIGS. 25-29 demonstrated in the said Example 4 is applicable.
Also in the fifth embodiment, the same configuration as that of the modified examples according to FIGS. 33 to 35 described in the first embodiment can be applied.

  That is, a cooling mechanism can be applied to the lower guide pipe 112b of the material guide pipe 112. More specifically, the vertical portion of the L-shaped lower guide tube 112b that is heated in a side view is lengthened, and the upper portion of the lower guide tube 112b is used as a heating unit and the lower guide is provided. A lower part of the pipe 112b is a short pipe part, and a cooling part arranged between the short pipe part and an upper part of the lower guide pipe 112b with a predetermined annular gap with respect to the inner surface thereof is provided. Provided. The configuration of the cooling unit is the same as that described with reference to FIGS.

Further, also in the fifth embodiment, the modification (shown in FIG. 31) provided with the heat insulating portion described in the fourth embodiment and the modification (shown in FIG. 32) provided with the liquid reservoir may be applied. it can.
Hereinafter, the configuration of the vacuum vapor deposition apparatus in the case where the heat insulating portion is provided will be briefly described with reference to FIG.

  That is, between the material movement path change pipe 161 and the material guide pipe 112, similarly to the modified example described with reference to FIG. 36 of the fourth embodiment, heating is not performed and thermal conductivity is low, that is, heat insulation. A heat insulating portion 176 made of a good material is disposed. As the heat insulating portion 176, for example, a tubular body having a predetermined length made of zirconia, glass or the like is used.

  As described above, since the heat insulating portion 176 is disposed on the upstream side of the material guide pipe 112 to be heated, heat is prevented from being transmitted from the material guide pipe 112 to the material movement path change pipe 161, that is, on the lower side. The temperature gradient region is shortened, and therefore the amount of liquid of the vapor deposition material by heating can be reduced.

Hereinafter, the configuration of the vacuum evaporation apparatus in the case where the liquid reservoir is provided will be briefly described with reference to FIG.
In other words, a liquid reservoir 178 is provided between the material movement path changing pipe 161 and the material guide pipe 112 in the same manner as the modified example described with reference to FIG. You may make it collect | recover. A connecting pipe 180 is provided between the liquid reservoir 178 and the material movement path changing pipe 161 to connect them.

  The liquid storage portion 178 has a tubular portion 178a and a truncated cone shape (so-called reverse hopper shape) provided inward of the tubular portion 178a and upward from the lower end of the inner surface. The liquid reservoir chamber 179 is formed between the tubular body portion 178a and the liquid receiver cylindrical portion 178b. Therefore, the liquid obtained by liquefying the vapor deposition material in the temperature gradient region upstream of the material guide pipe 112 falls and is stored in the liquid storage chamber 179. Thus, by collecting the liquid deposition material, the deposition material that has risen in the material filling container 111 can be smoothly moved to the deposition chamber 102.

Furthermore, the vacuum evaporation system based on Example 6 of this invention is demonstrated based on drawing.
In the above-described fourth embodiment, it has been described that the material-filled container is vibrated by the vibration applicator. However, in the vacuum deposition apparatus of the sixth embodiment, the material-filled container is rotated instead of being vibrated.

  The difference between the vacuum vapor deposition apparatus according to the sixth embodiment and the fourth embodiment is a part of the material-filled container. Therefore, in the sixth embodiment, the description will be given focusing on this part and the same as the fourth embodiment. About the structural member, the same number is attached | subjected and the detailed description is abbreviate | omitted.

  Briefly, a material filling container is connected to the material guide pipe described in the fourth embodiment, and a container rotating means for rotating the material filling container is provided. Here, the container rotating means is the center. I will explain. In addition, since a material filling container is not vibrated, the tubular connection member is not provided.

  That is, as shown in FIGS. 40 and 41, the lower guide pipe 112′b of the material guide pipe 112 in the vacuum evaporation apparatus according to the sixth embodiment has a predetermined angle θ (for example, more than 0 degree and 90 degrees). A bottomed cylindrical container holder 181 that can hold the material-filled container 182 in a rotatable manner is connected to the lower end thereof. The lower guide tube 112′b may not be bent.

  That is, the container holding body 181 includes a cylindrical body 182a having upper and lower ends opened, and a porous plate 182b attached to the lower end opening of the cylindrical body 182a. And a gap δ having a predetermined height from the bottom wall portion. For example, an electric motor 183 is attached to the outer surface of the bottom wall portion of the container holder 181 as a container rotating means, and the output shaft 183a of the electric motor 183 is inserted through the bottom wall portion of the container holder 181 to fill the material-filled container 182. Connected to the perforated plate 182b. Further, a spiral blade 184 is disposed inside the material filling container 182. Of course, a gas supply pipe 121 for supplying an inert gas is connected to the lower part of the side surface of the container holder 181 and, of course, the connection port 181a is provided so as to communicate with the gap δ. .

  Therefore, at the time of vapor deposition, an inert gas is supplied from the gas supply pipe 121 into the container holder 181 to be ejected from the perforated plate 182b into the cylindrical body 182a, and the cylindrical body 182a is rotated by the electric motor 183, whereby the material-filled container Since the vapor deposition material in 182 can be moved up and moved to the material guide pipe 112 side, the same effect as the vibration in the above-described fourth embodiment can be obtained.

  That is, an inert gas is supplied while rotating the material filling container 182 to guide the vapor deposition material in the material filling container 182 to the material guide line 112, and a heater 116 is provided in the material guide line 112. Since the vapor deposition material is vaporized, the crucible, that is, the material-filled container, as compared with the conventional one, in which the vapor deposition material is heated in the crucible and the vapor deposition rate is controlled by controlling the heating amount in the crucible. There is no need to heat the vapor deposition material at 182, so there is no need to worry about degradation of the vapor deposition material. In addition, since the spiral blade 184 is disposed in the material filling container 182, when the material filling container 182 is rotated, the rising of the vapor deposition material can be promoted. In some cases, the spiral blade 184 may be eliminated.

And also in the present Example 6, the structure similar to the modification based on FIGS. 27-29 demonstrated in the said Example 4 is applicable.
Further, also in the sixth embodiment, the modification (shown in FIG. 42) provided with the heat insulating portion described in the fourth embodiment and the modification (shown in FIG. 43) provided with the liquid reservoir may be applied. it can.

Hereinafter, the configuration of the vacuum vapor deposition apparatus in the case where the heat insulating portion is provided will be briefly described with reference to FIG.
That is, between the lower guide pipe 112′b of the material guide pipe 112 and the container holding body 181, as in the modified example described based on FIG. A heat insulating portion 191 made of a material having a low conductivity, that is, a good heat insulating property is disposed. As the heat insulating portion 191, a tubular body having a predetermined length made of, for example, zirconia or glass is used. The upper straight portion 112'bu of the bent lower guide tube 112'b may be used as the upper guide tube as a heating region, and the bent tube portion 112'bd including the bent portion may be used as the heat insulating portion.

  As described above, since the heat insulating portion 191 is arranged on the upstream side of the material guide pipe 112 to be heated, heat is prevented from being transmitted from the material guide pipe 112 to the material filling container 182 side, that is, the temperature on the lower side. The gradient region is shortened, so that the amount of liquid of the vapor deposition material by heating can be reduced.

Further, the configuration of the vacuum vapor deposition apparatus in the case where the liquid reservoir is provided will be briefly described with reference to FIG.
In other words, a liquid reservoir 196 is provided between the material guide pipe 112 and the material filling container 182 in the same manner as the modified example described with reference to FIG. You may make it do. In addition, since the container holding body 181 that holds the material-filled container 182 is provided to be inclined, a bent connection pipe 198 is provided between the liquid reservoir 196 and the container holding body 181.

  The liquid reservoir 196 has a tubular body 196a and a truncated cone shape (so-called reverse hopper shape) provided inward of the tubular body 196a and upward from the lower end of the inner surface. The liquid storage chamber 197 is formed between the tubular body portion 196a and the liquid reception cylindrical portion 196b.

  Therefore, the liquid in which the vapor deposition material is liquefied in the temperature gradient region upstream of the material guide pipe 112 falls and is stored in the liquid storage chamber 197. Thus, by collecting the liquid deposition material, the deposition material that has risen in the material filling container 111 can be smoothly moved to the deposition chamber 102.

  In each of the above embodiments, the case where the substrate is a film has been described. For example, as shown by the phantom lines in FIGS. 23, 36, 37, 38, and 40, the substrate K ′ is a flat surface. The plate may be made of stainless steel or silicon having a rectangular shape. Of course, in this case, the vapor deposition operation is performed batchwise.

  Moreover, in the said Examples 4-6, although the material guidance pipe | tube and material filling container except the front-end | tip part have been arrange | positioned outside the container for vapor deposition, a material guidance pipe | tube or material guidance is carried out as needed. The pipe line and the material-filled container may be disposed inside the deposition container. Further, it has been described that the deposition is performed on the lower surface of the substrate disposed horizontally in the deposition container. The present invention can be applied to a device that is disposed and vapor-deposited on a vertical surface of a substrate, or a device that is vapor-deposited on an upper surface of a substrate that is horizontally disposed.

The configuration of the vacuum vapor deposition apparatus including the configuration according to Examples 4 to 6 described above will be described as follows.
That is, this vacuum vapor deposition apparatus is a vapor deposition container for forming a thin film by depositing a vapor deposition material on the surface of a vapor deposition member under vacuum, and a material supply for guiding the vapor deposition material to the vapor deposition member in the vapor deposition container A device,
The material supply device
A material filling container filled with a powder deposition material;
An inert gas supply means for supplying an inert gas into the material-filled container;
Material guiding means for guiding the vapor deposition material to the vapor deposition member;
A deposition material control means for controlling the supply amount of the deposition material guided to the deposition target member;
The material guide means or a heating means for vaporizing the vapor deposition material guided by the material guide means by heating the inside of the material guide means,
Further, as the vapor deposition material control means, a vapor deposition amount control valve for controlling the passing amount of the vapor deposition material disposed in the middle of the material guiding means is used.

  By the way, in the said Examples 1-3, it demonstrates so that supply_amount | feed_rate of an inert gas may be controlled by a vapor deposition rate control apparatus, and in the said Examples 4-6, it is (material guide pipe line in a material guide means). In the above description, the amount of vapor deposition material passed is controlled by the vapor deposition rate control device. However, in some cases, the amount of inert gas supplied and the amount of vapor deposition material passed may be controlled by the vapor deposition rate control device. Good. That is, the gas flow rate control valve and the deposition amount control valve may be controlled by the deposition rate control device.

G Inert gas K Substrate K ′ Substrate M Vapor deposition material 1 Vapor deposition vessel 2 Vapor deposition chamber 3 Material supply device 8 Vapor deposition rate control device 11 Material filling vessel 11a Filling chamber 12 Material guide conduit 12a Upper guide tube 12b Lower guide tube 13 Vibration imparting device 13 ′ Vibration imparting device 13 ″ Vibration imparting device 14 Inert gas supply device 15 Gas supply amount control device 15 a Gas flow rate control valve 16 Deposition amount control valve 17 Heater 21 Gas supply pipe 25 Tubular connecting member 33 Heating wire 35 Punching metal 37 Window member 38 Heating lamp 41 Heat insulation part 46 Liquid storage part 47 Liquid storage room 51 Cooling mechanism 52 Short pipe part 53 Cooling part 61 Material movement path change pipe 61a First path change pipe part 61b Second path change pipe part 71 Stirrer 72 Electric motor 73 Stirrer 74 Rotating shaft 75 Stirrer blade 78 Liquid reservoir 79 Liquid reservoir 81 Container holder 82 Material filling capacity 83 Electric motor 84 Spiral blade 91 Heat insulation part 96 Liquid storage part 97 Liquid storage room 101 Deposition container 102 Deposition room 103 Material supply apparatus 108 Deposition rate control apparatus 111 Material filling container 111a Filling chamber 112 Material guide pipe 112a Upper guide pipe 112b Lower guide tube 113 Vibration applicator 113 ′ Vibration applicator 113 ″ Vibration applicator 114 Inert gas supply device 115 Vapor deposition material control device 115a Vapor deposition amount control valve 115b Driving unit 116 Heater 121 Gas supply tube 125 Tubular connecting member 133 Electric Hot wire 135 Punching metal 137 Window member 138 Heating lamp 141 Heat insulation part 146 Liquid storage part 147 Liquid storage room 151 Cooling mechanism 152 Short pipe part 153 Cooling part 161 Material movement path change pipe 161a First path change pipe part 161b Second path change Tube portion 171 Stirrer 172 Electric motor 73 the stirring member 174 rotates shaft 175 stirring blade 178 liquid storage portion 179 the liquid storage chamber 181 container holder 182 material filling container 183 motor 184 spiral blade 191 insulating section 196 liquid storage portion 197 the liquid storage chamber

Claims (6)

A deposition container for forming a thin film by depositing a deposition material on the surface of the deposition member under vacuum, and a material supply device for guiding the deposition material to the deposition member in the deposition container,
The material supply device
A material filling container filled with a powder deposition material;
An inert gas supply means for supplying an inert gas into the material-filled container;
Material guiding means for guiding the vapor deposition material to the vapor deposition member;
A deposition material control means for controlling the supply amount of the deposition material guided to the deposition target member;
The material guide means, or a heating means for vaporizing the vapor deposition material guided by the material guide means by heating the inside of the material guide means,
Providing a vibration applying means for applying vibration to the material-filled container;
A vacuum deposition apparatus, wherein an inert gas is supplied from a lower portion of the vibrating material-filled container. As the deposition material controlling means, a vacuum vapor deposition apparatus according to claim 1, characterized in that using a gas flow rate control valve for controlling the supply amount of the inert gas provided in the inert gas supply means. As the deposition material controlling means, a vacuum vapor deposition apparatus according to claim 1, characterized in that using an evaporation amount control valve for controlling the passage amount of the deployed evaporation material in the middle of the material guiding means. A deposition container for forming a thin film by depositing a deposition material on the surface of the deposition member under vacuum, and a material supply device for guiding the deposition material to the deposition member in the deposition container,
The material supply device
A material filling container filled with a powder deposition material;
An inert gas supply means for supplying an inert gas into the material-filled container;
Material guiding means for guiding the vapor deposition material to the vapor deposition member;
A deposition material control means for controlling the supply amount of the deposition material guided to the deposition target member;
The material guide means, or a heating means for vaporizing the vapor deposition material guided by the material guide means by heating the inside of the material guide means,
Arranging a heat insulating part between the material guiding means and the material filling container,
Vacuum vapor deposition apparatus characterized in that a liquid reservoir having a liquid storage chamber in the interior as the heat insulating portion. Vacuum vapor deposition apparatus according to any one of claims 1 to 3, characterized in that a cooling unit between said material guide means and the material filling container. Between the material guiding means and the material charging container, as radiant heat from the heating means provided on said material guide means does not reach directly on the surface of the vapor deposition material of the material filling container, the material movement route change The vacuum evaporation apparatus according to any one of claims 1 to 3, wherein a member is disposed.

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