JP6546721B2 - Quartz glass crucible for pulling single crystal silicon - Google Patents

Description

  The present invention relates to a quartz glass crucible for pulling single crystal silicon.

  Heretofore, a method called a so-called Czochralski method has been widely adopted for the production of a single crystal material such as a single crystal semiconductor material. In this method, polycrystalline silicon is melted in a container, and the end of the seed crystal is immersed in the molten bath (melt) and pulled up while rotating. In this method, single crystals having the same crystal orientation grow under the seed crystal. When pulling up single crystal silicon, a quartz glass crucible is generally used in the single crystal pulling vessel.

  When polysilicon is melted in a quartz glass crucible to pull up single crystal silicon, an oscillating wave front is generated on the surface of the silicon melt, and the silicon seed crystal is suitable for the silicon melt due to the generation of this oscillating wave front The problem of not being able to contact with and the problem of disordered crystallinity of single crystal silicon is a phenomenon that usually occurs frequently.

  One of the causes of the vibration of the melt surface (also referred to as "liquid surface vibration" or "hot surface vibration") is that the inner surface of the quartz glass crucible is made of a synthetic quartz glass layer. When the inner surface of the quartz glass crucible is a synthetic quartz glass layer, since the synthetic quartz glass layer is substantially bubble-free, liquid level vibration is likely to occur when pulling up single crystal silicon.

  In particular, in recent years, the diameter of single crystal silicon has become 8 inches (200 mm) or more, and one with a larger diameter has been produced in large quantities. As the diameter of the single crystal silicon to be produced increases, the diameter of the quartz glass crucible used for the pulling also increases. As the diameter of quartz glass crucibles increases, the problem of surface vibration becomes more and more important.

  In order to solve the problem of liquid level vibration as described above, for example, Patent Document 1 discloses a technique for suppressing liquid level vibration by roughening the inner surface of a crucible. By the method of Patent Document 1, it is possible to suppress the liquid level vibration of the first single crystal silicon pulling-up. However, in the case of performing so-called multi-pulling, in which a plurality of single crystal silicons are pulled from the same crucible, there is a problem that liquid level vibration is easily generated in pulling a plurality of single crystal silicons.

International Publication No. WO2011 / 158712

  The present invention has been made in view of the above-described circumstances, and effectively suppresses the occurrence of liquid level vibration at the time of pulling single crystal silicon, and in particular, the liquid surface at the time of pulling a plurality of single crystal silicon in multi pulling. An object of the present invention is to provide a single crystal silicon pulling quartz glass crucible capable of suppressing the occurrence of vibration.

  The present invention was made to solve the above problems, and is a quartz glass crucible comprising a bottom, a curved portion, and a straight body, for pulling single crystal silicon from a silicon melt held therein. An outer layer made of opaque quartz glass containing air bubbles, and an inner layer made of transparent quartz glass substantially containing no air bubbles, and the longitudinal direction is the vertical direction on a part of the inner surface of the straight body portion. A groove is formed, and the groove is formed such that, when the crucible holds the silicon melt, the groove is in contact with the melt surface in the initial state of the silicon melt, A quartz glass crucible for pulling up a single crystal silicon, characterized in that the groove is not formed in the bottom and the curved portion.

  In the quartz glass crucible for pulling single crystal silicon of the present invention, the presence of the groove can suppress the liquid level vibration. In particular, in the case of the crucible according to the present invention, the groove remains even in the crucible of the present invention due to the erosion of the inner surface of the quartz glass crucible caused by the first single crystal silicon pulling in multi pulling, and the liquid level vibration is effective in the second and subsequent single crystal silicon pulling Can be suppressed. Therefore, pulling up of the second and subsequent single crystal silicons can be stably performed. In addition, since no groove is formed in the bottom and the curved portion, the impurities and bubbles contained in the bulk portion of the quartz glass crucible do not elute into the silicon melt even when operated for a long time.

  In this case, when the height from the center point of the outer surface of the bottom portion to the upper end of the straight body portion is H, the groove has a height in the range of 0.5 × H to 0.9 × H. Is preferably formed.

  By forming the groove in such a range, the melt surface in the initial state of the silicon melt and the groove can be more reliably brought into contact with each other.

  Moreover, it is preferable that the depth of the said groove is 0.1 mm-1.0 mm from the inner surface of the said crucible.

  By setting the depth of such a groove, it is possible to more surely suppress the liquid level vibration in pulling up the second single crystal silicon and subsequent ones, and to prevent the penetration of impurities from the crucible wall into the silicon melt. .

  Moreover, it is preferable that the horizontal width of the said groove | channel is 0.1 mm-5.0 mm.

  By setting the width of the groove like this, it is possible to more reliably suppress the liquid level vibration in pulling up the single crystal silicon for the second and subsequent ones.

  Preferably, four or more grooves are formed on the inner surface of the straight body portion.

  As described above, by setting the number of grooves to four or more, liquid level vibration can be more effectively suppressed.

  Also, the area between the grooves can be roughened.

  As described above, by providing the rough surface area between the grooves, it is possible to suppress the liquid level vibration more effectively when pulling up the first single crystal silicon.

  Further, the groove and / or the rough surface may be formed by blasting using quartz powder. In this case, the blasting may be dry or wet.

  By forming the groove by such a method, the groove can be formed simply and without introducing unnecessary impurities. The same applies to the formation of a rough surface.

  In the quartz glass crucible for pulling a single crystal silicon of the present invention, the presence of the groove can effectively suppress the liquid level vibration. In particular, in so-called multi-pulling, even with the crucible of the present invention, the groove remains even in the crucible of the present invention due to the erosion of the inner surface of the quartz glass crucible caused by pulling up the first single-crystal silicon; It can be effectively suppressed. Therefore, pulling up of the second and subsequent single crystal silicons can be stably performed. As a result, it also leads to shortening of the operation time of single crystal pulling. In addition, since no groove is formed in the bottom and the curved portion, the impurities and bubbles contained in the bulk portion of the quartz glass crucible do not elute into the silicon melt even when operated for a long time. Therefore, if single crystal silicon is pulled using the quartz glass crucible of the present invention, a single crystal having high purity and no defects such as pinholes based on bubbles can be obtained.

It is a schematic sectional drawing of an example of the quartz glass crucible for single-crystal-silicon raising concerning this invention. It is a perspective view of an example of the quartz glass crucible for single crystal silicon pulling up concerning the present invention. It is a schematic sectional drawing which shows a mode that the silicon melt was hold | maintained at the quartz glass crucible for single-crystal-silicon raising concerning this invention. It is a schematic sectional drawing of another example of the quartz glass crucible for single-crystal-silicon raising concerning this invention.

  As described above, according to the method of suppressing the liquid level vibration by roughening the inner surface of the quartz glass crucible, the single crystal silicon pull-up single liquid crystal of the first single crystal, even if it is possible to suppress the liquid level vibration of the first single crystal There has been a problem that liquid level vibration is easily generated when pulling up silicon. This is because the rough surface is smoothed by the inner surface erosion of the quartz glass crucible caused by the first pulling up, and the liquid level vibration is generated in the pulling up of a plurality of single crystal silicon. The present inventors completed the present invention as a result of intensive studies conducted by the present inventors in order to suppress the plurality of liquid level vibrations.

  Hereinafter, the present invention will be more specifically described with reference to the drawings.

  FIG. 1 shows a schematic cross-sectional view of an example of a quartz glass crucible according to the present invention. FIG. 2 is a perspective view of the quartz glass crucible of the present invention shown in FIG. The quartz glass crucible 11 is composed of a bottom portion, a curved portion, and a straight body portion, and has an outer layer 13 made of opaque quartz glass containing bubbles and an inner layer 12 made of transparent quartz glass substantially free of bubbles. The straight body portion refers to a substantially cylindrical portion of the crucible shape. The area between the straight body and the bottom is referred to as the curve. The bottom of the crucible can be defined, for example, as a portion having a diameter of about two thirds of the outer diameter of the crucible. The height of the straight barrel can be defined, for example, as the upper three-quarters of the height of the crucible, but it varies depending on the shape of the crucible. The thickness of the inner layer 12 and the outer layer 13 can be the same as the thickness in a commonly used quartz glass crucible, and is not particularly limited. For example, the thickness of the inner layer 12 can be 1.5 mm or more, but may be thinner. In general, the inner layer 12 is formed of high purity quartz glass for direct contact with the silicon melt, and the outer layer 13 is lower in purity than the inner layer 12 in terms of maintaining the strength of the crucible and cost.

  In the quartz glass crucible 11 of the present invention, the groove 21 whose longitudinal direction is the vertical direction is formed in a part of the inner surface of the straight barrel portion. The “vertical direction” refers to the direction from the end face of the crucible (the upper end of the quartz glass crucible 11) to the center of the crucible bottom on the inner surface of the crucible 11 (ie, the surface of the inner layer 12). The groove 21 is formed such that when the quartz glass crucible 11 holds the silicon melt, the groove 21 is in contact with the melt surface in the initial state of the silicon melt. FIG. 3 shows a state in which the silicon melt is held in the quartz glass crucible 11 (before pulling up of single crystal silicon). The silicon melt 31 is held inside the quartz glass crucible 11, and single crystal silicon is pulled from the silicon melt 31. The “melt surface in the initial state of silicon melt” refers to the liquid surface in a state in which the silicon melt 31 before pulling up single crystal silicon is in the quartz glass crucible 11. The melt surface 32 illustrated in FIG. 3 is the melt surface in the initial state of the silicon melt.

  Moreover, in the quartz glass crucible 11 of the present invention, it is essential that the groove 21 is not formed in the bottom portion and the curved portion. The bottom portion and the curved portion are in contact with the silicon melt 31 for a long time during silicon single crystal pulling, and the width of the erosion is larger than that of the straight body portion. Therefore, if the groove is formed in the bottom portion and the curved portion, the erosion is likely to reach the outer layer 13, and impurities and air bubbles are easily taken into the silicon melt 31.

  The liquid surface vibration during pulling of single crystal silicon in the description of the present invention means that the seed crystal is brought into contact with the silicon melt 31 and passes through seeding (necking) until shoulder formation of single crystal silicon starts. It refers to the liquid level vibration seen between them. This liquid level vibration can be suppressed by using the quartz glass crucible 11 of the present invention.

  As described above, in the quartz glass crucible 11 of the present invention, it is necessary to provide the groove 21 so that the position of the liquid surface in the initial state of the silicon melt 31 is within the range of the groove 21 in the vertical direction. The position of the groove 21 from the upper end of the quartz glass crucible 11 may be appropriately set according to the diameter of the quartz glass crucible 11, the manufacturing conditions, and the like. In particular, when the height from the center point of the outer surface of the bottom of the quartz glass crucible 11 to the upper end of the straight barrel is H, the range of height from 0.5 × H to 0.9 × H (see FIG. Preferably, the groove 21 is formed in (1). By forming the groove 21 in such a range, the melt surface in the initial state of the silicon melt 31 can be more reliably brought into contact with the groove 21.

  As illustrated in FIG. 1, the height H is a height measured from the outer surface of the bottom of the quartz glass crucible 11.

  The length of the groove 21 in the vertical direction is preferably 10 mm or more above and 10 mm or less below the liquid level of the silicon melt 31 in the initial state. By forming the groove 21 with such a length, the melt surface in the initial state of the silicon melt 31 can be more reliably in contact with the groove 21.

  In the present invention, the depth of the groove 21 is preferably 0.1 mm to 1.0 mm from the inner surface of the quartz glass crucible 11. By setting the depth of the groove 21 to 0.1 mm or more, it is possible to more reliably suppress the liquid level vibration in the second and subsequent single crystal silicon pulling. Further, by setting the depth of the groove 21 to 1.0 mm or less, the penetration of impurities from the crucible wall of the quartz glass crucible 11 into the silicon melt can be suppressed. When the silicon melt is kept at high temperature, the inner surface of the quartz glass crucible 11 is attacked, so the bottom of the groove 21 is also attacked. It is preferable to set such an erosion not to reach the outer layer 13 even after pulling a plurality of single crystal silicons. In the case of the thickness of the inner layer and the outer layer of a normal quartz glass crucible, the depth of the groove 21 may be 1.0 mm or less. Even when the thickness of the inner layer 12 is thinner than 1.0 mm, the depth of the groove 21 can be set according to the thickness of the inner layer 12. When the thickness of the inner layer 12 is 0.5 mm, for example, the depth of the groove can be 0.1 to 0.3 mm.

  In the present invention, the width of the groove 21 is preferably 0.1 mm to 5.0 mm. By setting the width of the groove like this, it is possible to more reliably suppress the liquid level vibration in pulling up the single crystal silicon for the second and subsequent ones. The lateral width of the groove 21 refers to the width of the opening of the groove 21 in the direction perpendicular to the vertical direction. The cross-sectional shape of the groove 21 is not particularly limited, and a U-shaped groove, a V-shaped groove, a square groove or the like can be appropriately set.

  In the present invention, at least one groove 21 may be formed, but four or more grooves 21 are preferably formed on the inner surface of the straight body portion. As described above, by setting the number of grooves to four or more, liquid level vibration can be more effectively suppressed. The upper limit of the number of grooves is not particularly limited, but the number can be set in consideration of productivity.

  In addition, the region between the groove 21 and the groove 21 may be roughened. The aspect which formed the rough surface as another example of the quartz glass crucible of this invention was shown in FIG. By providing the rough surface region 22 between the groove 21 and the groove 21, it is possible to more effectively suppress the melt surface vibration when pulling up the first single crystal silicon. Although the aspect which aligned each upper and lower end of the groove 21 and the rough surface 22 is illustrated in FIG. 4, the formation position of the rough surface 22 is not limited to the aspect shown in figure, and between the groove 21 and the groove 21 It is sufficient if a rough surface is formed.

  Further, the grooves 21 can be formed by blasting using quartz powder. By forming the groove 21 by such a method, the groove can be formed simply and without introducing unnecessary impurities. As quartz powder used for blasting, synthetic quartz powder or high purity natural quartz powder can be used. In the blasting process, grooves 21 are formed on the inner surface of the quartz glass crucible 11 by spraying quartz powder with compressed air or centrifugal force. As a blasting process, dry blasting which sprays quartz powder may be sufficient, and wet blasting which sprays quartz powder with fluid, such as water, may be sufficient. As the quartz powder, it is preferable that the weight integration of the quartz powder having a particle diameter of 106 μm to 355 μm be 80% or more. For example, a sieve may be used to measure and sort the particle size.

  Further, the rough surface 22 can also be formed by blasting using quartz powder as in the case of the formation of the groove 21, and either dry or wet can be used.

  In the quartz glass crucible 11 of the present invention, the groove 21 remains even by the erosion of the inner surface of the quartz glass crucible 11 caused by pulling up the first single crystal silicon, and the liquid level vibration is effectively achieved by pulling up the second single crystal silicon. Can be suppressed. Therefore, pulling up of the second and subsequent single crystal silicons can be stably performed. As a result, it leads to shortening of operation time. In addition, since no groove is formed in the bottom and the curved portion, the impurities and bubbles contained in the bulk portion of the quartz glass crucible 11 are not eluted into the silicon melt 31 even when operated for a long time. Therefore, if single crystal silicon is pulled using the quartz glass crucible 11 of the present invention, a single crystal having high purity and no defects such as pinholes based on bubbles can be obtained.

In the application of the present invention, the diameter of the crucible is not particularly limited, and the present invention can be applied to crucibles of various diameters.

  Hereinafter, the present invention will be described in more detail by way of Examples and Comparative Examples, but the present invention is not limited to these Examples, and various modifications may be made without departing from the technical concept of the present invention. Of course it is possible.

Example 1
The single crystal silicon pulling quartz glass crucible 11 shown in FIGS. 1 and 2 was manufactured through the following steps. First, natural quartz powder having a particle size of 50 to 500 μm was supplied into a rotating mold having an inner diameter of 570 mm, and a molded body formed of a powder layer having a thickness of 25 mm to be an outer layer was molded. Next, while heating and melting from the inside of the molded body by arc discharge, synthetic quartz glass powder is supplied at a rate of 100 g / min in the high temperature atmosphere, and a bubble-free transparent glass layer (inner layer) is covered over the entire inner surface region. , 1 to 3 mm thick. After melting was completed, it was cooled to obtain a quartz glass crucible having a diameter of 555-560 mm. About this quartz glass crucible, the upper end was cut so that the height H (height from the center point of the outer surface of the bottom to the top of the straight barrel) would be 370 mm, and a quartz glass crucible was manufactured. Next, a quartz glass crucible 11 was produced in which four grooves 21 each having a length of 74 mm and a depth of 0.1 mm were formed on the inner surface of the straight barrel by quartz powder blasting. The groove formation position was in the range of 0.6 × H to 0.8 × H with respect to the height H. The groove forming process was performed on the inner wall surface with the quartz glass crucible turned upside down so that the upper end was down. The particle size distribution of the high purity natural quartz powder used as the blast material was measured, and the ratio of the particle diameter of 106 μm to 355 μm was 87% by weight.

  Next, single crystal silicon was pulled up as follows using the quartz glass crucible 11 produced as mentioned above. First, polycrystalline silicon was accommodated in the quartz glass crucible 11 and then melted to obtain a silicon melt 31 shown in FIG. At this time, the melt surface 32 in the initial state of the silicon melt 31 had a height of about 260 mm (that is, about 0.7 × H), and the groove 21 was in contact with the melt surface 32. The vibration of the melt surface 32 of the silicon melt 31 was slightly observed until the seed crystal was brought into contact with the silicon melt 31, subjected to seed squeezing (necking) and shoulder formation of single crystal silicon started. The level was not affected by the operation. Feeding of raw materials and pulling of single crystal silicon were repeated twice more using the same quartz glass crucible 11 (that is, pulling up three times in total), but the tendency of liquid level vibration was the same as the first one. The In addition, the yield of manufactured single crystals was also good.

(Example 2)
A quartz glass crucible 11 was manufactured in which the number of grooves 21 was changed to eight as compared with Example 1. When single crystal silicon was pulled from the silicon melt 31 in the same manner as in Example 1 using this quartz glass crucible 11, no liquid level vibration occurred. The tendency of the liquid level vibration was similar in the second and third pulling ups. In addition, the yield of manufactured single crystals was also good.

(Example 3)
A quartz glass crucible 11 was produced in which the depth of the grooves 21 was 0.5 mm and the number of the grooves 21 was eight in comparison with Example 1. When single crystal silicon was pulled from the silicon melt 31 in the same manner as in Example 1 using this quartz glass crucible 11, no liquid level vibration occurred. The tendency of the liquid level vibration was similar in the second and third pulling ups. In addition, the yield of manufactured single crystals was also good.

(Example 4)
A quartz glass crucible 11 was manufactured in which the depth of the grooves 21 was 0.7 mm and the number of the grooves 21 was eight in comparison with Example 1. When single crystal silicon was pulled from the silicon melt 31 in the same manner as in Example 1 using this quartz glass crucible 11, no liquid level vibration occurred. The tendency of the liquid level vibration was similar in the second and third pulling ups. In addition, the yield of manufactured single crystals was also good.

(Example 5)
In comparison to Example 4, a quartz glass crucible 11 was produced in which the lower end of the groove 21 was changed to a height of 0.2 × H. Thus, the groove 21 is formed near the lower end of the straight body portion, that is, near the boundary with the curved portion. When single crystal silicon was pulled from the silicon melt 31 in the same manner as in Example 1 using this quartz glass crucible 11, no liquid level vibration occurred. The tendency of the liquid level vibration was similar in the second and third pulling ups. However, the yield of the manufactured single crystal slightly decreased. It is considered that this is because the groove 21 is formed near the lower end of the straight body portion, so that the erosion due to contact with the silicon melt 31 for a long time progresses near the lower end of the straight body portion.

(Example 6)
A quartz glass crucible 11 was produced in which the depth of the groove 21 was changed to 1.0 mm as compared with Example 1. When single crystal silicon was pulled from the silicon melt 31 in the same manner as in Example 1 using this quartz glass crucible 11, no liquid level vibration occurred. The tendency of the liquid level vibration was similar in the second and third pulling ups. In addition, the yield of manufactured single crystals was also good.

(Example 7)
A quartz glass crucible 11 was manufactured in which the depth of the grooves 21 was 1.0 mm and the number of the grooves 21 was 12 in comparison with Example 1. When single crystal silicon was pulled from the silicon melt 31 in the same manner as in Example 1 using this quartz glass crucible 11, no liquid level vibration occurred. The tendency of the liquid level vibration was similar in the second and third pulling ups. In addition, the yield of manufactured single crystals was also good.

(Example 8)
A quartz glass crucible 11 was manufactured in which the depth of the groove 21 was 1.0 mm and the number of the grooves 21 was changed to two, as compared with Example 1. When single crystal silicon was pulled up from the silicon melt 31 in the same manner as in Example 1 using this quartz glass crucible 11, liquid level vibration was generated, but the vibration was slightly observed, affecting operation. There was no level. The tendency of the liquid level vibration was similar in the second and third pulling ups. In addition, the yield of manufactured single crystals was also good.

(Example 9)
A quartz glass crucible 11 was manufactured in which the depth of the grooves 21 was 1.2 mm and the number of the grooves 21 was eight in comparison with Example 1. When single crystal silicon was pulled from the silicon melt 31 in the same manner as in Example 1 using this quartz glass crucible 11, no liquid level vibration occurred. The tendency of the liquid level vibration was similar in the second and third pulling ups. However, the yield of the manufactured single crystal slightly decreased. This is considered to be due to the progress of the erosion by the silicon melt 31 because the groove 21 is formed deep.

(Comparative example 1)
A single crystal silicon pulling quartz glass crucible was produced through the following steps. First, natural quartz powder having a particle size of 50 to 500 μm was supplied into a rotating mold having an inner diameter of 570 mm, and a molded body formed of a powder layer having a thickness of 25 mm was molded. Next, while heating and melting from the inside of the molded body by arc discharge, synthetic quartz glass powder is supplied at a rate of 100 g / min in the high temperature atmosphere, and the transparent glass layer without bubbles is It was formed with a thickness of 3 mm. After melting was completed, it was cooled to obtain a quartz glass crucible having a diameter of 555-560 mm. The upper end of the quartz glass crucible was cut to a height of 370 mm to produce a quartz glass crucible. The grooves as in Examples 1 to 9 were not formed in this quartz glass crucible.

  Next, single crystal silicon was pulled up as follows using the quartz glass crucible manufactured as mentioned above. First, polycrystalline silicon was accommodated in a quartz glass crucible and then melted to obtain a silicon melt. At this time, the melt surface in the initial state of the silicon melt had a height of about 260 mm. The seed crystal is brought into contact with the silicon melt, and after the seeding (necking), vibration of the silicon melt surface which occurs until the shoulder portion formation of single crystal silicon starts occurs, so that the automatic operation can not be performed. Manual adjustment was required. At the second and third pulling ups, liquid level vibration occurred and automatic operation could not be performed, and manual adjustment by the operator was necessary.

(Comparative example 2)
As compared with Example 4, a quartz glass crucible was produced in which the groove length was changed to the center of the crucible bottom. That is, the groove was formed not only in the straight body portion but also in the curved portion and the bottom portion. When single crystal silicon was pulled using this quartz glass crucible, no liquid level vibration occurred. The height of the melt surface in the initial state of the silicon melt was about 260 mm. The tendency of the liquid level vibration was similar in the second and third pulling ups. However, the yield of manufactured single crystals was significantly reduced. It is considered that this is because the grooves are formed in the curved portion and the bottom portion, so that the corrosion has significantly progressed by contact with the silicon melt 31 for a long time.

The formation conditions of the grooves of the quartz glass crucibles of Examples 1 to 9 and Comparative Examples 1 and 2 and the results of single crystal silicon pulling are summarized in Table 1. The symbol "o" in the table indicates that the result is very good, the symbol ".DELTA." Indicates that the result is satisfactory, and the symbol "x" indicates that the result is poor.

  From the results of Examples 1 to 9 and Comparative Examples 1 to 2, by forming the groove in a part of the inner surface of the straight body portion, it is possible to suppress the liquid level vibration while keeping the single crystal yield high. I understand. On the other hand, it is understood that it is necessary not to form a groove in the bottom and the curved portion.

  The present invention is not limited to the above embodiment. The above embodiment is merely an example, and any configuration having substantially the same configuration as the technical idea described in the claims of the present invention and having the same function and effect can be used. It is included in the technical scope of the invention.

11 ... quartz glass crucible, 12 ... inner layer, 13 ... outer layer,
21 Groove, 22 Rough surface, 31 Silicon melt, 32 Melt surface.

Claims (7)

A quartz glass crucible comprising a bottom, a curved portion, and a straight body, for pulling single crystal silicon from a silicon melt held therein,
An outer layer of opaque quartz glass containing bubbles, and an inner layer of transparent quartz glass substantially free of bubbles,
A groove whose longitudinal direction is the vertical direction is formed in a part of the inner surface of the straight body portion, and the groove is the silicon when the crucible holds the silicon melt. It is formed to be in contact with the melt surface in the initial state of the melt, the groove is not formed in the bottom and the curved portion, and the region between the groove and the groove is roughened A quartz glass crucible for pulling single crystal silicon characterized in that.   When the height from the center point of the outer surface of the bottom to the upper end of the straight body portion is H, the groove is formed within a height range of 0.5 × H to 0.9 × H. The quartz glass crucible for pulling single crystal silicon according to claim 1, characterized in that:   The quartz glass crucible for pulling single crystal silicon according to claim 1 or 2, wherein a depth of the groove is 0.1 mm to 1.0 mm from an inner surface of the crucible.   The quartz glass crucible for pulling single crystal silicon according to any one of claims 1 to 3, wherein a width of the groove is 0.1 mm to 5.0 mm.   5. The single crystal silicon pulling quartz glass crucible according to any one of claims 1 to 4, wherein four or more grooves are formed on the inner surface of the straight body portion. The single-crystal silicon pulling quartz according to any one of claims 1 to 5 , wherein the groove and / or the rough surface is formed by blasting using quartz powder. Glass crucible. 7. The single crystal silicon pulling quartz glass crucible according to claim 6 , wherein the blasting treatment is dry or wet.

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