JP6481603B2 - Bonded wafer manufacturing method and bonded wafer - Google Patents

Description

  The present invention relates to a method for manufacturing a bonded wafer and a bonded wafer, and more particularly, to a method and a bonded wafer capable of manufacturing a bonded wafer having a device formation region having higher crystallinity than conventional ones.

  Conventionally, wide band gap semiconductor wafers such as gallium nitride (GaN) and silicon carbide (SiC) have been used in power devices that require a withstand voltage of several hundred volts or more.

  These power devices have two types of structures, a vertical structure and a horizontal structure. The vertical structure is an IGBT (Insulated Gate Bipolar Transistor) device, and the horizontal structure is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) device. is there. Here, when the horizontal structure is used, the device formation region is a region within 10 μm from the wafer surface, and functions only as a base other than the device formation region.

In recent years, a method for heterojunction of a wide band gap semiconductor substrate (for example, a GaN wafer) to a cheap substrate (for example, a silicon wafer) by using a bonding technique using a smart cut technology for the purpose of reducing the cost of the substrate material. Is used. This smart cut technology forms a defect region by implanting hydrogen ions at a high dose of 5 × 10 ¹⁶ cm ⁻² or more into the surface of the active layer wafer, and forms the active region wafer and the support substrate wafer. Are bonded together via the surface on the defect region side of the active layer wafer, and then a part of the active layer wafer is peeled off in the defect region.

  For example, in Patent Document 1, using the smart cut technology, a smart cut layer (defect region) is provided on the surface of a SiC seed substrate having a low impurity concentration and a low crystal defect, and the surface and crystal defects having a high impurity concentration are provided. A technology that creates a SiC substrate having a drift layer with few crystal defects by bonding the surface of many SiC base substrates to each other, then cleaving with a smart cut layer to separate the substrate, and then homoepitaxially growing the SiC film. Is described.

JP 2014-022711 A

  However, in the conventional smart cut technology including Patent Document 1, when an implantation defect remains in a region where hydrogen has permeated during hydrogen implantation, and the epitaxial layer is formed after that, the implantation defect becomes an epitaxial defect. There is a problem that the crystallinity of the epitaxial layer, that is, the device formation region is lowered by inducing the formation.

  Therefore, an object of the present invention is to provide a method and a bonded wafer capable of manufacturing a bonded wafer having a device formation region having higher crystallinity than conventional ones.

  As a result of intensive studies on how to solve the above problems, the present inventor, instead of hydrogen ion implantation into the surface of the active layer wafer, performed in the technique described in Patent Document 1, molecular ions are used. The inventors came up with the idea of irradiating and completed the present invention.

That is, the gist of the present invention is as follows.
(1) A molecular ion irradiation step of irradiating a surface of an active layer wafer made of a compound semiconductor with molecular ions to form a defect region inside the active layer wafer; a support made of the active layer wafer and silicon A bonding step of bonding the substrate wafer to the active layer wafer through the defect region side surface, and applying heat treatment to the bonded active layer wafer and the support substrate wafer, A separation heat treatment step of cleaving in the defect region to separate a part of the active layer wafer, and epitaxially growing the compound semiconductor on the remaining portion of the active layer wafer on the support substrate wafer to form an epitaxial layer It possesses the epitaxial layer forming step of forming the constituent elements of the molecular ion, the compound semiconductor of the constituent elements and cognate former Or A method for producing a bonded wafer wherein the elements and hydrogen der Rukoto of of identity group.

(2) The method for manufacturing a bonded wafer according to (1) , wherein the bonding step is performed at room temperature in a vacuum chamber.

(3) The bonded wafer according to (1) or (2) , further including a step of planarizing a remaining surface of the active layer wafer between the peeling heat treatment step and the epitaxial layer forming step. Manufacturing method.

(4) The method for producing a bonded wafer according to any one of (1) to (3) , wherein the compound semiconductor is gallium nitride or silicon carbide.

  According to the present invention, a bonded wafer having a device formation region with higher crystallinity than conventional can be obtained.

It is a flowchart of the manufacturing method of the bonded wafer by this invention.

(Method for manufacturing bonded wafer)
Hereinafter, the present invention will be specifically described with reference to the drawings. FIG. 1 shows a flowchart of a method for manufacturing a bonded wafer according to the present invention. In the method for producing a bonded wafer according to the present invention, the surface 11A of the active layer wafer 11 (FIG. 1A) made of a compound semiconductor is irradiated with molecular ions 15 (FIG. 1B), and the active layer wafer 11 is irradiated. The molecular ion irradiation step (FIG. 1C) for forming the defect region 16 inside the substrate, the active layer wafer 11 and the support substrate wafer 12 made of silicon are connected to the defect region 16 side of the active layer wafer 11. A bonding step (FIG. 1 (D)) to be bonded through the surface 11A, and the bonded active layer wafer 11 and support substrate wafer 12 are heat-treated and cleaved at the defect region 16 to form the active layer. The above-mentioned compound semiconductor is formed on the remaining portion 11C of the active layer wafer 11 on the support substrate wafer 12 and the peeling heat treatment step (FIG. 1E) for peeling the part 11B of the wafer 12 for use. Epitaxial grown and having a epitaxial layer forming step of forming an epitaxial layer 13 (FIG. 1 (F)). FIG. 1F shows a schematic cross-sectional view of a bonded wafer 1 obtained by this manufacturing method. Hereafter, each process is demonstrated concretely.

  First, as shown in FIG. 1A, an active layer wafer 11 and a support substrate wafer 12 are prepared. The active layer wafer 11 is a wafer used as a device active layer, and in the present invention, is a wafer made of a single crystal compound semiconductor. The compound semiconductor is generally used in a power device, and examples thereof include GaN and SiC. These compound semiconductors can be obtained by an HVPE (Hydride Vapor Phase Epitaxy) method, a sublimation method, or the like. When the compound semiconductor is GaN, an element such as Al or In may be included. Further, when the compound semiconductor is SiC, elements such as Ge and Sn may be included.

  As the support substrate wafer 12, a silicon wafer is used. As this silicon wafer, a single crystal silicon ingot or a polycrystalline silicon ingot grown by the Czochralski method (CZ method) or the floating zone melting method (FZ method) can be used. . Carbon and / or nitrogen may be added to the support substrate wafer 12. Further, an arbitrary impurity may be added to obtain n-type or p-type.

  Next, as shown in FIG. 1B, a molecular ion irradiation process is performed in which the surface 11A of the active layer wafer is irradiated with molecular ions 15. As a result, as shown in FIG. 1C, a defect region 16 is formed inside the irradiated active layer wafer 11.

  As described above, in the conventional smart cut technology, a defect region for cleaving a part of the active layer wafer is formed by implantation of hydrogen ions. On the other hand, in the present invention, the defect region 16 is formed by irradiating the molecular ion 15 obtained by ionizing the molecule, instead of implanting a single atom ion (monomer ion).

  In the present invention, the molecular ion 15 is irradiated with an acceleration voltage of about 10 to 100 keV / molecule. However, since the molecule is an aggregate of a plurality of atoms, the energy per atom is converted to the conventional ion. It can be introduced into the active layer wafer 11 in a state of being smaller than the implantation. As a result, the constituent elements of the molecular ions 15 are introduced at a shallow position from the surface 11A compared to the conventional ion implantation, and the defect region 16 is also formed at a shallow position from the surface 11A.

  Further, as described above, since the energy per atom is smaller than that in the case of performing conventional ion implantation, the region of the active layer wafer 11 through which the constituent elements of the molecular ions 15 pass (the subsequent active layer wafer 11). Damage to the crystal structure of the remaining portion 11C) can be reduced, and crystal defects are reduced. As a result, in the subsequent peeling heat treatment step, the crystallinity of the remaining portion 11C after the part 11B of the active layer wafer 11 is peeled increases.

  As will be described later, an epitaxial layer 13 made of a compound semiconductor constituting the active layer wafer 11 is formed on the remaining portion 11C of the active layer wafer 11, and the remaining portion 11C epitaxially grows the compound semiconductor. Function as the nucleus of crystal growth. Therefore, the reduction of crystal defects in the remaining portion 11C leads to the reduction of crystal defects in the epitaxial layer 13 formed thereon, and the crystallinity of the epitaxial layer 13 can be improved.

  Furthermore, since the distribution (spreading) of the constituent elements of the molecular ions 15 introduced into the active layer wafer 11 in the wafer thickness direction is narrower than in the case of performing conventional ion implantation, the surface (cleavage surface) of the remaining portion 11C. ) Is also flat. Hereinafter, the irradiation conditions of the molecular ions 15 will be described.

  First, the constituent element of the molecular ion 15 is not particularly limited, but is preferably an element belonging to the same group as the element constituting the compound semiconductor, or the same element and hydrogen. Thereby, since the molecular ion constituent elements remaining in the remaining portion 11C after the ion implantation are electrically inactive, for example, the occurrence of standby leakage current can be suppressed, and the adverse effect of device characteristics due to the implanted ion elements is suppressed. be able to.

Specifically, when the compound semiconductor is GaN, the molecular ions 15 may be selected from molecular ions composed of Group III and V elements, such as P _{x Hy} ions, B _{x Hy} ions, N _x H _y ions, Ga _x H _y ions, N _x H _y ions (where x = 1 to 10 and y = 1 to 30) are desirable. Further, when the compound semiconductor is SiC, a molecular ion composed of a group IV element may be selected, and C _x H _y ion, Si _x H _y ion, Ge _x H _y ion (where x = 1 or more) 10 or less, y = 1 or more and 30 or less) is desirable.

  Further, the acceleration voltage of the molecular ions 15 is set to be greater than 0 keV / atom and less than or equal to 500 keV / atom. Preferably, it is set to 100 keV / atom or less. Thereby, the defect area | region 16 can be formed in a very shallow area | region from the irradiation surface 11A of the wafer 11 for active layers. As a result, the thickness of the remaining portion 11C of the active layer wafer 11 on the support substrate wafer 12 can be reduced in the subsequent peeling heat treatment step, and the part 11B of the peeled active layer wafer 11 is bonded again to the bonded wafer. The number of repetitions can be increased for use in the production.

  Here, adjustment of the acceleration voltage can be performed using two methods of (1) electrostatic acceleration and (2) high-frequency acceleration. As the former method, there is a method in which a plurality of electrodes are arranged at equal intervals and an equal voltage is applied between them to create an equal acceleration electric field in the axial direction. As the latter method, there is a linear linac method in which ions are accelerated using a high frequency while running linearly.

The dose amount of the molecular ions 15 is 1 in order to sufficiently damage the defect region 16 so that a part 11B of the active layer wafer 11 can be cleaved by the defect region 16 in a subsequent peeling heat treatment step. × 10 ¹⁶ molecules / cm ² or more. Preferably, it is 1 × 10 ¹⁷ molecules / cm ² or less. Thereby, the high crystallinity of the region (that is, the remaining portion 11C of the active layer wafer) through which the constituent elements of the molecular ions 15 pass can be maintained. The dose of the molecular ions 15 can be adjusted by controlling the irradiation time of the molecular ions 15.

  In addition, the molecular ion does not need to be composed of a single molecule, and a plurality of ion clusters can be ionized and irradiated. In this case, the number of molecules is preferably 2 or more and 40 or less.

  The number of molecules contained in the molecular ion 15 can be adjusted by adjusting the gas pressure of the gas ejected from the nozzle, the pressure of the vacuum vessel, the voltage applied to the filament during ionization, and the like. The number of molecules can be obtained by obtaining a molecular number distribution by mass spectrometry using a quadrupole high-frequency electric field or time-of-flight mass spectrometry and taking an average value of the number of molecules.

  When the charged state of the molecular ion 15 is positive (+), the molecular ion 15 can be generated using a Nielsen-type ion source or a Kaufman-type ion source. On the other hand, when the charged state of the molecular ion 15 is negative (−), the molecular ion 15 can be generated using a large current negative ion source using a volume generation method.

  Thus, the defect region 16 can be formed inside the active layer wafer 11 irradiated with the molecular ions 15.

  Subsequently, as shown in FIG. 1D, the active layer wafer 11 and the support substrate wafer 12 are bonded to the defect region 16 side surface of the active layer wafer 11 (ie, the surface irradiated with the molecular ions 15) 11A. A laminating step of laminating through is performed. This bonding process can be performed using any known wafer bonding apparatus.

In the bonding step, it is preferable to perform bonding at room temperature (hereinafter also referred to as “vacuum room temperature bonding”) in a vacuum chamber (for example, a pressure in the chamber of 1 × 10 ⁻³ Pa or less). Thereby, it can be set as the bonded wafer which an oxide film does not exist in a bonding interface. If an oxide film having a low heat transmission rate is present at the bonding interface, heat dissipation of the active layer wafer may be hindered and warped when subjected to a high temperature heat treatment such as a peeling heat treatment or a device heat treatment.

  The bonding process by vacuum room temperature bonding is a method of bonding both wafers at room temperature without heating. Specifically, the bonded surfaces of the active layer wafer 11 and the support substrate wafer 12 are irradiated with an ion beam or a neutral atom beam under vacuum to activate the bonded surfaces. Thereby, a dangling bond (bonding hand) appears on each bonding surface. For this reason, when the two bonded surfaces are continuously brought into contact with each other under vacuum, a bonding force is instantaneously exerted and the two wafers are firmly bonded.

  The activation of the bonding surface can be performed as follows, for example. That is, first, the active layer wafer 11 and the support substrate wafer 12 are introduced into the plasma chamber, and then the pressure in the plasma chamber is reduced, and then the source gas is introduced into the plasma chamber. Subsequently, by using a pulse voltage application device, a negative voltage is applied to the wafer in a pulsed manner to generate plasma of the source gas, and ions of the source gas contained in the generated plasma are used for the active layer wafer 11 and the support substrate. Accelerate and irradiate the wafer 12.

  The element to be irradiated is preferably at least one selected from Ar, Ne, Xe, H, He and Si. Therefore, the source gas contains these elements. As the silicon source, one or more of monosilane, dichlorosilane, trichlorosilane, silicon tetrachloride and the like can be used.

  Here, the pulse voltage applied to the active layer wafer 11 and the support substrate wafer 12 is set to 100 V or more and 10 kV or less. When the voltage is less than 100 V, the irradiated element accumulates on the substrate surface, and dangling bonds cannot be formed on the substrate surface. On the other hand, if it exceeds 10 kV, the irradiated element will be injected into the wafer and dangling bonds on the wafer surface cannot be formed.

  The frequency of the pulse voltage determines the number of times that the active layer wafer 11 and the support substrate wafer 12 are irradiated with ions. The frequency of the pulse voltage is preferably 10 Hz to 10 kHz. Here, by setting the frequency to 10 Hz or more, the ion irradiation variation can be absorbed and the ion irradiation amount is stabilized. Moreover, the plasma formation by glow discharge is stabilized by setting it as 10 kHz or less.

  The pulse width of the pulse voltage determines the time during which ions are applied to the active layer wafer 11 and the support substrate wafer 12. The pulse width is preferably 1 μsec or more and 10 ms or less. By setting it to 1 microsecond or more, the active layer wafer 11 and the support substrate wafer 12 can be stably irradiated with ions. Moreover, the plasma formation by glow discharge is stabilized by setting it as 10 milliseconds or less.

  Since the active layer wafer 11 and the support substrate wafer 12 are not heated, the temperature is room temperature (usually 30 ° C. to 90 ° C.).

  Thereafter, as shown in FIG. 1E, the bonded active layer wafer 11 and support substrate wafer 12 are heat-treated and cleaved at the defect region 16 to form a part 11B of the active layer wafer 12. A peeling heat treatment step for peeling off is performed.

  This exfoliation heat treatment process can be performed using, for example, a rapid heating / cooling heat treatment apparatus such as RTA or RTO, or a batch heat treatment apparatus (vertical heat treatment apparatus, horizontal heat treatment apparatus). Since the former is a lamp irradiation heating method, it is not suitable for long-time treatment in terms of the device structure, and is suitable for heat treatment within 15 minutes. On the other hand, in the latter, although it takes time to raise the temperature to a predetermined temperature, a large number of wafers can be processed simultaneously. In addition, because of the resistance heating method, long-time heat treatment is possible. An appropriate heat treatment apparatus may be selected in consideration of the irradiation conditions of the molecular ions 15.

  Further, the peeling heat treatment step can be performed at 300 ° C. or higher and 600 ° C. or lower. Here, by setting the heat treatment temperature to 300 ° C. or higher, the crystal structure of the compound semiconductor in the defect region 16 can be destroyed, and the part 11B of the active layer wafer 11 can be peeled off. On the other hand, by setting the temperature to 600 ° C. or lower, defects introduced by implantation are not recovered, and peeling can be performed without generating slip due to heat treatment at a high temperature and increasing the thermal load on the apparatus. .

  The heat treatment time can be 10 minutes or more and 1 hour or less. Here, by setting it for 10 minutes or more, it is possible to cleave at the defect region 16 and peel off a part 11B of the active layer wafer 11. On the other hand, by setting it to 1 hour or less, peeling can be performed without reducing productivity and increasing the thermal load on the apparatus.

  Subsequently, as shown in FIG. 1 (F), an epitaxial layer forming step is performed in which the compound semiconductor constituting the active layer wafer 11 is epitaxially grown on the remaining portion 11C of the active layer wafer 11 to form the epitaxial layer 13. . In this epitaxial layer forming step, the same compound semiconductor as the compound semiconductor constituting the active layer wafer 11 is epitaxially grown.

  The epitaxial growth of the compound semiconductor can be performed using a known epitaxial growth technique such as MBE method or MOCVD method, and the epitaxial layer 13 having an appropriate thickness, resistivity, and conductivity type can be formed.

  In the bonded wafer 1 thus obtained, the remaining portion 11C of the bonded wafer 11 and the epitaxial layer 13 on the support substrate wafer 12 can be used as a device forming region 14 for forming a device in a subsequent device forming step.

  In addition, it is preferable that the planarization process of planarizing the surface of the remaining part 11C of the wafer 11 for active layers 11 is further included between the said peeling heat treatment process and an epitaxial layer formation process. This flattening step can be performed by, for example, a known surface grinding and mirror polishing method. Moreover, it can also carry out by the process by dry etching, such as PACE (Plasma Assisted Chemical Etching) and DCP (Dry Chemical Planarization).

  In the present invention, when the defect region 16 is formed, the molecular ions 15 are irradiated. Therefore, the surface of the remaining portion 11C after the part 11B of the active layer wafer 11 is peeled is compared with the case where conventional hydrogen ions are implanted. And flatness is high. As a result, the defects of the epitaxial layer 13 formed on the remaining portion 11C of the active layer wafer 11 are reduced as compared with the prior art, but after the part 11B of the active layer wafer 11 is peeled off, By performing a planarization process on the surface of the remaining portion 11C, defects in the epitaxial layer can be further reduced.

  In this way, a bonded wafer having a higher crystalline device formation region than the conventional one can be manufactured.

(Laminated wafer)
Next, the bonded wafer according to the present invention will be described. The silicon wafer 1 shown in FIG. 1 (F) manufactured by the method for manufacturing a bonded wafer according to the present invention includes a support substrate wafer 12 made of silicon and a compound semiconductor on the support substrate wafer 12. The active layer wafer 11 (11C) and the epitaxial layer 13 made of the compound semiconductor on the active layer wafer 11 are included. Here, the dislocation density of the epitaxial layer 13 is 1 × 10 ⁶ / cm ² or less.

In the bonded wafer 1, the active layer wafer has few crystal defects, and as a result, a low dislocation density of the epitaxial layer 13 of 1 × 10 ⁵ / cm ² or less is realized.

  In the bonded wafer 1, the remaining portion 11C of the bonded wafer 11 and the epitaxial layer 13 on the support substrate wafer 12 can be used as a device forming region 14 for forming a device in a subsequent device forming process.

Further, the dislocation density of the epitaxial layer 13 is preferably 5 × 10 ⁴ / cm ² or less. Furthermore, the compound semiconductor is preferably gallium nitride or silicon carbide.

  Examples of the present invention will be described below, but the present invention is not limited to the examples.

(Invention Example 1)
A bonded wafer was manufactured according to the flowchart shown in FIG. That is, first, a GaN wafer (diameter: 2 inches, plane orientation: c-plane (<0001>), thickness: 350 μm) manufactured by the HVPE method as an active layer wafer, and a CZ method as a support substrate wafer. A silicon wafer (diameter: 2 inches, plane orientation: <001>, thickness: 350 μm, oxygen concentration: 1.1 × 10 ¹⁸ atoms / cm ³ ) collected from the obtained single crystal silicon ingot was prepared. Next, using a molecular ion generator (manufactured by Nissin Ion Instruments Co., Ltd., model number: CLARIS), B ₂ H ₅ is generated as molecular ions, acceleration voltage: 40 keV / molecule, dose: 5 × 10 ¹⁶ molecules / cm ^2. The surface of the active layer wafer was irradiated under the condition of an acceleration voltage per boron atom: 16 keV / atom to form a defect region inside the active layer wafer. Subsequently, the wafer for active layer and the wafer for support substrate are introduced into the chamber, the inside of the chamber is evacuated to a vacuum degree of 6 × 10 ⁻⁴ Pa, and then irradiated with Ar ions to support the wafer for active layer and the support. After activating the surface of the substrate wafer, the active layer wafer and the supporting substrate wafer were bonded together at normal temperature via the defect region side surface of the active layer wafer. Then, after taking out the bonded wafer from the chamber, it was transferred into a batch-type horizontal heat treatment furnace, and subjected to a peeling heat treatment at 500 ° C. for 30 minutes in a nitrogen atmosphere. Thereafter, the wafer was transferred to an MOCVD apparatus, and 2 μm of GaN was epitaxially grown on the remaining portion (GaN) of the wafer for active layer after peeling. Thus, a bonded wafer according to Invention Example 1 of the present invention was produced. Two more same wafers as this bonded wafer were produced.

(Invention Example 2)
A bonded wafer was manufactured in the same manner as in Invention Example 1. However, the process of planarizing the remaining surface (peeling surface) of the wafer for active layers was performed between the peeling heat treatment step and the epitaxial layer forming step. Specifically, the surface of the active layer wafer is planarized using a plasma etching apparatus (manufactured by Speedfam, model number: DCP-200X), and the apparatus is used to produce a bonded wafer according to Invention Example 2. did. Other conditions are the same as those of Invention Example 1.

(Conventional example)
A bonded wafer was manufactured in the same manner as in Invention Example 1. However, instead of irradiating the surface of the wafer for active layer with molecular ions B ₂ H ₅ , hydrogen ions are accelerated by an ion implantation apparatus (Applied Materials, model number: Quantum II-80), acceleration voltage: 40 keV, dose amount: 4 × By implanting under the condition of 10 ¹⁷ cm ⁻² , a bonded wafer according to the conventional example was manufactured. Other conditions are the same as those of Invention Example 1.

<Evaluation of epitaxial defects>
The dislocation density of the epitaxial layer was evaluated for each of the bonded wafers of Invention Examples 1 and 2 and the conventional example. Specifically, this evaluation was performed based on the cathodoluminescence method, and the number of spots output in the form of black spots was counted and converted to the number of black spots per unit area. There were three evaluation locations: the wafer center, the center position between the wafer center and the wafer edge, and the position 5 mm inward in the wafer radial direction from the wafer edge, and the average value of the measured values at these three locations was determined. The obtained results are shown in Table 1.

  As is apparent from Table 1, when Invention Example 1 is compared with the conventional example, the dislocation density of Invention Example 1 is greatly reduced as compared with the conventional example, and it can be seen that the crystallinity is improved. Further, when Invention Example 1 and Invention Example 2 are compared, the dislocation density of Invention Example 2 is lower, and the remaining surface (peeling surface) of the active layer wafer between the peeling heat treatment step and the epitaxial layer forming step. It can be understood that the dislocation density can be further reduced and the crystallinity can be further improved by performing the polishing step on the substrate.

  According to the present invention, a bonded wafer having a device formation region having higher crystallinity than that of a conventional one can be manufactured, which is useful in the semiconductor industry.

DESCRIPTION OF SYMBOLS 1 Bonded wafer 11 Active layer wafer 11A Surface of active layer wafer 11B Part of active layer wafer 11C Remaining part of active layer wafer 12 Support substrate wafer 13 Epitaxial layer 14 Device formation region 15 Molecular ion 16 Defect region

Claims (4)

A molecular ion irradiation step of irradiating the surface of an active layer wafer made of a compound semiconductor with molecular ions and forming a defect region inside the active layer wafer;
A bonding step in which the active layer wafer and a support substrate wafer made of silicon are bonded through the defect region side surface of the active layer wafer;
A peeling heat treatment step of performing heat treatment on the bonded active layer wafer and the supporting substrate wafer, cleaving in the defect area and peeling off a part of the active layer wafer;
An epitaxial layer forming step of epitaxially growing the compound semiconductor to form an epitaxial layer on the remaining portion of the active layer wafer on the support substrate wafer;
I have a,
Constituent elements of the molecular ion, the compound semiconductor constituent element and whether homologous element, method for producing a bonded wafer wherein the elements and hydrogen der Rukoto of of identity group. The method for producing a bonded wafer according to claim 1 , wherein the bonding step is performed at room temperature in a vacuum chamber. Wherein during the delamination heat treatment step and the epitaxial layer forming step, further comprising the step of flattening the surface of the remainder of the wafer for the active layer, A method of producing a bonded wafer according to claim 1 or 2. The compound semiconductor is gallium or silicon carbide nitride, method of producing a bonded wafer according to any one of claims 1-3.

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