JP6462078B2 - Pressure sensor, microphone and sound processing system - Google Patents

Description

  Embodiments described herein relate generally to a pressure sensor, a microphone, and a sound processing system.

  In a capacitive microphone that converts sound into an electric signal by changing the capacitance, the entire diaphragm becomes a part of the electrode. Therefore, when the microphone is downsized, the area of the electrode is reduced together with the diaphragm, and the sensitivity is deteriorated. On the other hand, if the gap between the capacitors is reduced, the sensitivity is improved. However, when the gap between the capacitors is reduced, the gap between the capacitors is not sufficient at a large volume, and sticking may occur where the diaphragm sticks to the electrode. In addition, in a capacitive microphone, even if it is possible to deal with a large volume by providing a plurality of diaphragms, it may be difficult to switch diaphragms for high-frequency sounds.

JP2013-205403A

  Embodiments of the present invention provide a wide dynamic range pressure sensor microphone and sound processing system, or a pressure sensor, microphone and sound processing system capable of detection in a wide frequency band.

According to the embodiment, a pressure sensor including a base, a sensor unit, and a processing circuit is provided. The sensor unit is provided on the base body. The processing circuit processes a signal obtained from the sensor unit. The sensor unit includes a transducer thin film, a first strain sensing element, and a second strain sensing element. The transducer thin film has flexibility. The first strain sensing element is provided on the transducer thin film on the film surface. The second strain sensing element is provided apart from the first strain sensing element in the transducer thin film. The distance between the first strain sensing element and the center of gravity of the transducer thin film is shorter than the distance between the second strain sensing element and the center of gravity. The first strain sensing element is included in a first strain sensing element group in which a plurality of strain sensing elements are connected in series. The second strain sensing element is included in a second strain sensing element group different from the first strain sensing element group in which a plurality of strain sensing elements are connected in series. The distance between the first strain sensing element group and the center of gravity is shorter than the distance between the second strain sensing element group and the center of gravity. The first strain sensing element group and the second strain sensing element group are arranged along the side of the transducer thin film. The first strain sensing element includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer provided between the first magnetic layer and the second magnetic layer. The second strain sensing element includes a third magnetic layer, a fourth magnetic layer, and a nonmagnetic second intermediate layer provided between the third magnetic layer and the fourth magnetic layer. The processing circuit outputs a first signal obtained from the first strain sensing element when a first pressure is applied to the transducer thin film. The processing circuit outputs a second signal obtained from the second strain sensing element when a second pressure smaller than the first pressure is applied to the transducer thin film.

It is a typical perspective view showing the pressure sensor concerning a 1st embodiment. It is a typical top view showing a part of pressure sensor concerning a 1st embodiment. FIG. 3A to FIG. 3D are schematic plan views showing a part of the pressure sensor according to the first embodiment. It is a typical perspective view showing some pressure sensors concerning a 1st embodiment. Fig.5 (a)-FIG.5 (c) are typical perspective views which show operation | movement of the pressure sensor which concerns on 1st Embodiment. FIG. 6A and FIG. 6B are schematic perspective views showing a part of the pressure sensor according to the first embodiment. FIG. 7A and FIG. 7B are schematic views showing the operation of the pressure sensor according to the first embodiment. FIG. 8A and FIG. 8B are schematic diagrams showing the relationship between the position on the film surface of the transducer thin film and the strain. FIG. 9A and FIG. 9B are schematic views showing the relationship between the position on the film surface of another transducer thin film and the strain. FIG. 10 is a graph showing the optimum strain range of the strain sensing element. Fig.11 (a) and FIG.11 (b) are typical top views which show the example of the pressure sensor which concerns on this embodiment. FIG. 12A to FIG. 12C are schematic views showing examples of sensor line connection forms of the present embodiment. FIG. 13A and FIG. 13B are schematic plan views showing examples of the pressure sensor according to the present embodiment. FIG. 14A and FIG. 14B are schematic diagrams showing a circuit after output of a line. FIG. 15A and FIG. 15B are flowcharts illustrating a method for generating a control signal. FIG. 16A and FIG. 16B are flowcharts showing the operation of the pressure sensor according to the first embodiment. It is a typical top view showing another pressure sensor concerning a 2nd embodiment. It is a typical top view showing another pressure sensor concerning a 2nd embodiment. It is a typical top view showing another pressure sensor concerning a 2nd embodiment. It is a flowchart figure which shows the manufacturing method of the pressure sensor which concerns on 3rd Embodiment. FIG. 21A to FIG. 21D are schematic perspective views in order of steps showing the method for manufacturing the pressure sensor according to the third embodiment. It is a schematic diagram explaining the confirmation process in the manufacturing method of the pressure sensor which concerns on 3rd Embodiment. FIG. 23A and FIG. 23B are schematic diagrams illustrating an example in which one line of a plurality of lines is fixedly output. It is a typical perspective view which shows the pressure sensor which concerns on 4th Embodiment. FIG. 25A to FIG. 25C are schematic views showing a pressure sensor according to the fourth embodiment. It is a flowchart figure which shows the manufacturing method of the pressure sensor which concerns on 5th Embodiment. It is a schematic diagram which shows the microphone which concerns on 6th Embodiment.

Each embodiment will be described below with reference to the drawings.
Note that the drawings are schematic or conceptual, and the size ratio between the parts is not necessarily the same as the actual one. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1 is a schematic perspective view illustrating the configuration of the pressure sensor according to the first embodiment.
In FIG. 1, in order to make the drawing easier to see, the insulating portion is omitted and the conductive portion is mainly drawn.
FIG. 2 is a schematic plan view illustrating the configuration of a part of the pressure sensor according to the first embodiment.

  As shown in FIG. 1, the pressure sensor 310 according to the present embodiment includes a base 71a and a sensor unit 72 (first sensor unit 72A). The sensor unit 72 is provided on the base 71a. The sensor unit 72 (first sensor unit 72A) includes a first transducer thin film 64A and a first strain sensing element 50A. The first transducer thin film 64A has a film surface 64a (first film surface). The first transducer thin film 64A is flexible. The first transducer thin film 64A has a function of bending when pressure is applied from the outside and transducing the strain sensing element 50 formed thereon as a strain. The external pressure includes not only the pressure itself but also a pressure generated by sound waves or ultrasonic waves. In the case of sound waves or ultrasonic waves, the pressure sensor will function as a microphone.

  The thin film that becomes the transducer thin film 64 may be continuously formed outside the portion bent by the external pressure. In the present specification, a portion surrounded by a fixed end, having a certain thickness and being thinner than the fixed end and being bent by an external pressure is called a transducer thin film.

  The first transducer thin film 64A is fixed to the base 71a at the edge 64eg. The first strain sensing element 50A is provided on the first film surface. The configuration of the first strain sensing element 50A will be described later.

  A hollow portion 70 is formed in the base 71a. A portion of the base 71 a other than the cavity 70 corresponds to the non-cavity 71. The non-hollow part 71 is juxtaposed with the hollow part 70.

  The cavity portion 70 is a portion where the material forming the non-cavity portion 71 is not provided. The cavity 70 may be in a vacuum (a low pressure state lower than 1 atm), and the cavity 70 may be filled with a gas such as air or an inert gas. Further, the hollow portion 70 may be filled with a liquid. A deformable substance may be disposed in the cavity 70 so that the first transducer thin film 64A can be bent.

  When pressure (including sound, ultrasonic waves, etc.) is applied to the first transducer thin film 64A from the outside, the first transducer thin film 64A bends. As a result, strain is generated in the strain sensor (sensor unit 72) disposed on the first transducer thin film 64A. In this way, the first transducing thin film 64A transmits (transduces) the pressure signal to the sensor unit 72, and the pressure signal is converted into a distortion signal in the sensor unit 72.

  The first transducer thin film 64A is disposed above the cavity 70 and is fixed to the base 71a at the edge 64eg.

  Here, a plane parallel to the film surface 64a (first film surface) is defined as an XY plane. When the film surface 64a is not a plane, the plane including the edge portion 64eg of the film surface 64a is defined as an XY plane. A direction perpendicular to the XY plane is taken as a Z-axis direction.

  As shown in FIGS. 1 and 2, in the pressure sensor 310, the base 71a, the transducer thin film 64 (first transducer thin film 64A), the first strain sensing element 50A, the first wiring 57 (wirings 57a to 57d), and A second wiring 58 (wirings 58a to 58d) is provided. In this example, a plurality of strain sensing elements 50 (strain sensing elements 50a to 50d) are provided. The first strain sensing element 50A is one of the plurality of strain sensing elements 50. For example, the strain sensing element 50a is used as the first strain sensing element 50A.

  That is, the sensor unit 72 (first sensor unit 72A) further includes a second strain sensing element 50B. The second strain sensing element 50B is provided on the film surface 64a. For example, a strain sensing element 50b is used as the second strain sensing element 50B. In this example, a straight line passing through the first strain sensing element 50A and the second strain sensing element 50B passes through the center of gravity 64b of the film surface 64a. Specifically, a straight line passing through the center of gravity of the first strain sensing element 50A and the center of gravity of the second strain sensing element 50B passes through the center of gravity 64b. The distance between the first strain sensing element 50A and the center of gravity 64b of the film surface 64a is different from the distance between the second strain sensing element 50B and the center of gravity 64b of the film surface 64a.

  The sensor unit 72 further includes a third strain sensing element 50C. The third strain sensing element 50C is provided on the film surface 64a. As the third strain sensing element 50C, for example, a strain sensing element 50c is used. In this example, a straight line passing through the first strain sensing element 50A, the second strain sensing element 50B, and the third strain sensing element 50C passes through the center of gravity 64b of the film surface 64a. Specifically, a straight line passing through the center of gravity of the first strain sensing element 50A, the center of gravity of the second strain sensing element 50B, and the center of gravity of the third strain sensing element 50C passes through the center of gravity 64b. The distance between the third strain sensing element 50C and the center of gravity 64b of the film surface 64a is the distance between the first strain sensing element 50A and the center of gravity 64b of the film surface 64a and the distance between the second strain sensing element 50B and the film surface 64a. It is different from the distance between the center of gravity 64b.

  The sensor unit 72 further includes a fourth strain sensing element 50D. The fourth strain sensing element 50D is provided on the film surface 64a. For example, a strain sensing element 50d is used as the fourth strain sensing element 50D. In this example, a straight line passing through the first strain sensing element 50A, the second strain sensing element 50B, the third strain sensing element 50C, and the fourth strain sensing element 50D passes through the center of gravity 64b of the film surface 64a. Specifically, the straight line passing through the center of gravity of the first strain sensing element 50A, the center of gravity of the second strain sensing element 50B, the center of gravity of the third strain sensing element 50C, and the center of gravity of the fourth strain sensing element 50D is It passes through the center of gravity 64b. The distance between the fourth strain sensing element 50D and the center of gravity 64b of the film surface 64a is the distance between the first strain sensing element 50A and the center of gravity 64b of the film surface 64a, and the distance between the second strain sensing element 50B and the film surface 64a. The distance between the center of gravity 64b and the distance between the third strain sensing element 50C and the center of gravity 64b of the film surface 64a are different.

  In this example, four strain sensing elements 50 (strain sensing elements 50a to 50d) are provided. The strain sensing elements 50a to 50d are arranged on the film surface 64a along the portion on the −X axis direction side from the center (corresponding to the center of gravity 64b) of the straight line 64d. The strain sensing element 50 is disposed at a position different from the position of the center of gravity 64b of the film surface 64a of the transducer thin film 64. The number of strain sensing elements 50 installed is not limited to four. The number of strain sensing elements 50 may be plural as long as it is two, three, or five or more.

FIG. 3A to FIG. 3D are schematic plan views illustrating the configuration of part of the pressure sensor according to the first embodiment.
These drawings illustrate the shape of the film surface 64 a of the transducer thin film 64.
As shown in FIGS. 3A to 3D, the shape of the film surface 64a (flexible portion) of the transducer thin film 64 is a circle, a flat circle (including an ellipse), a square, a rectangle, or the like. . In such a case, the center of gravity of the film surface 64a is the center of a circle, the center of an ellipse, the center of a square diagonal line, or the center of a rectangular diagonal line, respectively.

  The transducer thin film 64 is formed of, for example, an insulating layer. Alternatively, the transducer thin film 64 is formed of, for example, a metal material. The transducer thin film 64 includes, for example, silicon oxide or silicon nitride. The thickness of the transducer thin film 64 is, for example, not less than 200 nm and not more than 3 μm. Preferably, it is 300 nm or more and 1.5 μm or less. The diameter of the transducer thin film 64 is not less than 1 μm and not more than 600 μm, for example. More preferably, it is 60 μm or more and 600 μm or less. For example, the transducer thin film 64 is flexible in the Z-axis direction perpendicular to the film surface 64a.

As shown in FIG. 2, in this example, the straight line 64 c passes through the center of gravity 64 b of the film surface 64 a of the transducer thin film 64 and is parallel to the Y-axis direction. The straight line 64d passes through the center of gravity 64b of the film surface 64a of the transducer thin film 64 and is parallel to the X-axis direction.
When the same material is used for the transducer thin film 64 and the base 71a and they are integrated, the edge of the thin portion becomes the edge 64eg of the transducer thin film 64. When the transducer thin film 64 has a cavity 70 that penetrates the base 71 a in the thickness direction, and the transducer thin film 64 is provided so as to cover the cavity 70, the transducer thin film 64 is formed. Of the film of material, the edge of the portion overlapping the cavity 70 becomes the edge 64eg of the transducer thin film 64.

  One end of each of the strain sensing elements 50a to 50d is connected to each of the first wirings 57 (for example, the wirings 57a to 57d). The other ends of the strain sensing elements 50a to 50d are connected to the second wirings 58 (for example, 58a to 58d).

  The first wiring 57 and the second wiring 58 extend from the strain sensing element 50 toward the base 71a through the edge portion 64eg.

FIG. 4 is a schematic perspective view illustrating the configuration of a part of the pressure sensor according to the first embodiment.
FIG. 4 shows an example of the configuration of the strain sensing element 50. As illustrated in FIG. 3, the strain resistance change unit 50 s (the strain detection element 50 and the first strain detection element 50 </ b> A) includes, for example, the first magnetic layer 10, the second magnetic layer 20, and the first magnetic layer. 10 and an intermediate layer 30 (first intermediate layer) provided between the first magnetic layer 20 and the second magnetic layer 20. The intermediate layer 30 is a nonmagnetic layer. The configuration of each of the plurality of strain sensing elements 50 is the same as described above.

  In this example, the first magnetic layer 10 is a magnetization free layer. The second magnetic layer 20 is, for example, a magnetization fixed layer or a magnetization free layer.

  Hereinafter, an example of the operation of the strain sensing element 50 will be described in the case where the second magnetic layer 20 is a magnetization fixed layer and the first magnetic layer 10 is a magnetization free layer. In the strain sensing element 50, the “inverse magnetostriction effect” possessed by the ferromagnetic material and the “MR effect” manifested in the strain resistance change unit 50s are utilized.

  The “MR effect” is a phenomenon in which, in a laminated film having a magnetic material, when an external magnetic field is applied, the value of the electric resistance of the laminated film changes due to a change in magnetization of the magnetic material. The MR effect includes, for example, a GMR (Giant magnetoresistance) effect or a TMR (Tunneling magnetoresistance) effect. By flowing a current through the strain resistance changing portion 50s, the MR effect is manifested by reading the change in the relative angle of the magnetization direction as a change in electrical resistance. For example, a tensile stress is applied to the strain resistance change unit 50 s based on the stress applied to the strain sensing element 50. When the magnetization direction of the first magnetic layer 10 (magnetization free layer) and the direction of the tensile stress applied to the second magnetic layer 20 are different, the MR effect is manifested by the inverse magnetostriction effect. ΔR / R is referred to as “MR change rate”, where R is the resistance in the low resistance state and ΔR is the amount of change in electrical resistance that changes due to the MR effect.

FIG. 5A to FIG. 5C are schematic perspective views illustrating the operation of the pressure sensor according to the first embodiment.
These drawings illustrate the state of the strain sensing element 50. These drawings illustrate the relationship between the magnetization direction in the strain sensing element 50 and the direction of tensile stress.

  FIG. 5A shows a state where no tensile stress is applied. At this time, in this example, the magnetization direction of the second magnetic layer 20 (magnetization fixed layer) is the same as the magnetization direction of the first magnetic layer 10 (magnetization free layer).

  FIG. 5B shows a state where tensile stress is applied. In this example, tensile stress is applied along the X-axis direction. For example, due to the deformation of the transducer thin film 64, for example, a tensile stress along the X-axis direction is applied. That is, the tensile stress is applied in a direction orthogonal to the magnetization directions (Y-axis direction in this example) of the second magnetic layer 20 (magnetization fixed layer) and the first magnetic layer 10 (magnetization free layer). At this time, the magnetization of the first magnetic layer 10 (magnetization free layer) rotates so as to be in the same direction as the direction of the tensile stress. This is called “reverse magnetostriction effect”. At this time, the magnetization of the second magnetic layer 20 (magnetization fixed layer) is fixed. Accordingly, the magnetization of the first magnetic layer 10 (magnetization free layer) and the magnetization direction of the second magnetic layer 20 (magnetization fixed layer) and the magnetization direction of the first magnetic layer 10 (magnetization free layer) are rotated. And the relative angle changes.

  In this figure, the magnetization direction of the second magnetic layer 20 (magnetization fixed layer) is shown as an example, and the magnetization direction may not be the direction shown in this figure.

  In the inverse magnetostriction effect, the easy axis of magnetization changes depending on the sign of the magnetostriction constant of the ferromagnetic material. Many materials exhibiting a large inverse magnetostrictive effect have a positive sign for the magnetostriction constant. When the magnetostriction constant has a positive sign, the direction in which tensile stress is applied as described above is the easy axis of magnetization. At this time, as described above, the magnetization of the first magnetic layer 10 (magnetization free layer) rotates in the direction of the easy axis of magnetization.

  For example, when the magnetostriction constant of the first magnetic layer 10 (magnetization free layer) is positive, the magnetization direction of the first magnetic layer 10 (magnetization free layer) is set to a direction different from the direction in which tensile stress is applied. . On the other hand, when the magnetostriction constant is negative, the direction perpendicular to the direction in which the tensile stress is applied becomes the easy axis of magnetization.

  FIG. 5C illustrates a state where the magnetostriction constant is negative. In this case, the magnetization direction of the first magnetic layer 10 (magnetization free layer) is set to a direction different from the direction perpendicular to the direction in which the tensile stress is applied (X-axis direction in this example).

  In this figure, the magnetization direction of the second magnetic layer 20 (magnetization fixed layer) is shown as an example, and the magnetization direction may not be the direction shown in this figure.

  Depending on the angle between the magnetization of the first magnetic layer 10 and the magnetization of the second magnetic layer 20, the electrical resistance of the strain sensing element 50 (strain resistance changing unit 50s) changes due to, for example, the MR effect.

  The magnetostriction constant (λs) indicates the magnitude of the shape change when an external magnetic field is applied and the ferromagnetic layer is saturated and magnetized in a certain direction. If the length is L in the absence of an external magnetic field and changes by ΔL when an external magnetic field is applied, the magnetostriction constant λs is expressed by ΔL / L. Although the amount of change varies depending on the magnitude of the magnetic field, the magnetostriction constant λs is expressed as ΔL / L in a state where a sufficient magnetic field is applied and magnetization is saturated.

  For example, when the second magnetic layer 20 is a magnetization fixed layer, Fe, Co, Ni, or an alloy material thereof is used for the second magnetic layer 20. The second magnetic layer 20 is made of a material obtained by adding an additive element to the above material. For the second magnetic layer 20, for example, a CoFe alloy, a CoFeB alloy, a NiFe alloy, or the like can be used. The thickness of the second magnetic layer 20 is, for example, not less than 2 nanometers (nm) and not more than 6 nm.

A metal or an insulator can be used for the intermediate layer 30. For example, Cu, Au, Ag, or the like can be used as the metal. In the case of metal, the thickness of the intermediate layer 30 is, for example, 1 nm or more and 7 nm or less. As the insulator, for example, magnesium oxide (such as MgO), aluminum oxide (such as Al ₂ O ₃ ), titanium oxide (such as TiO), and zinc oxide (such as ZnO) can be used. In the case of an insulator, the thickness of the intermediate layer 30 is, for example, 1 nm or more and 3 nm or less.

  When the first magnetic layer 10 is a magnetization free layer, for example, at least one of Fe, Co, and Ni, or an alloy material containing at least one of them is used for the first magnetic layer 10. A material obtained by adding an additive element to the above material is used.

A material having a large magnetostriction is used for the first magnetic layer 10. Specifically, a material having an absolute value of magnetostriction larger than 10 ⁻⁵ is used. As a result, the magnetization changes sensitively with respect to strain. For the first magnetic layer 10, a material having a positive magnetostriction may be used, or a material having a negative magnetostriction may be used.

For the first magnetic layer 10, for example, an FeCo alloy, a NiFe alloy, or the like can be used. In addition, the first magnetic layer 10 includes an Fe—Co—Si—B alloy, a Tb—M—Fe alloy exhibiting λs> 100 ppm (M is Sm, Eu, Gd, Dy, Ho, Er), Tb— M1-Fe-M2 alloy (M1 is Sm, Eu, Gd, Dy, Ho, Er, M2 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta), Fe-M3-M4- B alloy (M3 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta, M4 is Ce, Pr, Nd, Sm, Tb, Dy, Er), Ni, Al-Fe and ferrite ( Fe ₃ O ₄ , (FeCo) ₃ O ₄ ) and the like can be used. The thickness of the first magnetic layer 10 is, for example, 2 nm or more.

The first magnetic layer 10 may have a two-layer structure. In this case, the first magnetic layer 10 may include an FeCo alloy layer and the following layers stacked with the FeCo alloy layer. Stacked with the FeCo alloy layer is an Fe—Co—Si—B alloy, a Tb—M—Fe alloy (M is Sm, Eu, Gd, Dy, Ho, Er), Tb— M1-Fe-M2 alloy (M1 is Sm, Eu, Gd, Dy, Ho, Er, M2 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta), Fe-M3-M4- B alloy (M3 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta, M4 is Ce, Pr, Nd, Sm, Tb, Dy, Er), Ni, Al-Fe and ferrite ( Fe ₃ O ₄ , (FeCo) ₃ O ₄ ), etc.).

  For example, when the intermediate layer 30 is a metal, the GMR effect appears. When the intermediate layer 30 is an insulator, a TMR effect appears. For example, in the strain sensing element 50, for example, a CPP (Current Perpendicular to Plane) -GMR effect in which a current flows along the stacking direction of the strain resistance change unit 50s is used.

  Further, as the intermediate layer 30, a CCP (Current-Confined-Path) spacer layer in which a plurality of metal current paths having a width (for example, a diameter) of about 1 nm to about 5 nm are formed through a part of the insulating layer in the film thickness direction. Can be used. Again, the CCP-GMR effect is used.

  Thus, in this embodiment, the inverse magnetostriction phenomenon in the strain sensing element 50 is used. Thereby, highly sensitive detection becomes possible. When the inverse magnetostriction effect is used, for example, the magnetization direction of at least one of the first magnetic layer 10 and the second magnetic layer 20 changes with respect to a strain applied from the outside. The relative angles of the magnetizations of the two magnetic layers change depending on the strain (existence / absence and degree thereof) applied from the outside. Since the electrical resistance changes due to externally applied strain, the strain sensing element 50 functions as a pressure sensor.

FIG. 6A and FIG. 6B are schematic perspective views illustrating a partial configuration of the pressure sensor according to the first embodiment.
As shown in FIG. 6A, the strain sensing element 50 includes, for example, a first electrode 51 and a second electrode 52. A strain resistance changing portion 50 s is provided between the first electrode 51 and the second electrode 52. In this example, in the strain resistance changing unit 50 s, there is a case where the buffer layer 41 (also serves as a seed layer) from the first electrode 51 side toward the second electrode 52. The thickness is, for example, 1 nm or more and 10 nm or less. Specifically, an amorphous layer containing Ta or Ti is used, or a layer such as Ru or NiFe serving as a seed layer for promoting crystal orientation is used (a laminated film of these may be used). Antiferromagnetic layer 42 (for example, thickness 5 nm or more and 10 nm or less), magnetic layer 43 (for example, thickness 2 nm or more and 6 nm or less), Ru layer 44, second magnetic layer 20 (for example, thickness 2 nm or more and 5 nm or less), intermediate layer 30 (For example, a thickness of 1 nm to 3 nm), a first magnetic layer 10 (for example, a thickness of 2 nm to 5 nm) and a cap layer 45 (for example, a thickness of 1 nm to 5 nm) are provided in this order. To have.

  For example, a magnetic multilayer film is used for the second magnetic layer 20. The first magnetic layer 10 includes a magnetic laminated film 10a (for example, a thickness of 1 nm or more and 3 nm or less. For example, an alloy containing CoFe or CoFe is used), a magnetic laminated film 10a, and a cap layer 45. High magnetostrictive magnetic film 10b (for example, 1 nm or more and 5 nm or less).

For the first electrode 51 and the second electrode 52, for example, a non-magnetic material such as Au, Cu, Ta, or Al can be used. By using a soft magnetic material as the first electrode 51 and the second electrode 52, it is possible to reduce external magnetic noise that affects the strain resistance changing portion 50s. For example, permalloy (NiFe alloy) or silicon steel (FeSi alloy) can be used as the soft magnetic material. The strain sensing element 50 is covered with an insulator such as aluminum oxide (for example, Al ₂ O ₃ ) or silicon oxide (for example, SiO ₂ ) so that no leak current flows around it.

The magnetization direction of at least one of the first magnetic layer 10 and the second magnetic layer 20 changes according to the stress. The absolute value of the magnetostriction constant of at least one of the magnetic layers (magnetic layer whose magnetization direction changes according to stress) is preferably set to 10 ⁻⁵ or more, for example. Thereby, the magnetization direction changes according to the strain applied from the outside by the inverse magnetostriction effect. For example, at least one of the first magnetic layer 10 and the second magnetic layer 20 is made of a metal such as Fe, Co, Ni, or an alloy containing them. The magnetostriction constant is set to be large depending on the element used and the additive element. The absolute value of the magnetostriction constant is preferably large. Considering materials that can be used as realistic devices, the absolute value of the magnetostriction constant is practically about 10 ⁻² or less.

For example, an oxide such as MgO is used for the intermediate layer 30. The magnetic layer on the MgO layer generally has a positive magnetostriction constant. For example, when the first magnetic layer 10 is formed on the intermediate layer 30, a magnetization free layer having a laminated structure of CoFeB / CoFe / NiFe is used as the first magnetic layer 10. When the uppermost NiFe layer is Ni-rich, the magnetostriction constant of the NiFe layer is negative and its absolute value increases. In order to suppress the cancellation of the positive magnetostriction on the oxide layer, the Ni composition of the uppermost NiFe layer is not made Ni rich as compared with the permalloy composition of Ni ₈₁ Fe ₁₉ which is generally used. Specifically, the Ni ratio in the uppermost NiFe layer is preferably less than 80 atomic percent (atomic%). When the first magnetic layer 10 is a magnetization free layer, the thickness of the first magnetic layer 10 is preferably, for example, 1 nm or more and 20 nm or less.

  In the case where the first magnetic layer 10 is a magnetization free layer, the second magnetic layer 20 may be a magnetization fixed layer or a magnetization free layer. When the second magnetic layer 20 is a fixed magnetization layer, the magnetization direction of the second magnetic layer 20 does not substantially change even when strain is applied from the outside. The electrical resistance changes depending on the relative magnetization angle between the first magnetic layer 10 and the second magnetic layer 20. The presence or absence of distortion is detected by the difference in electrical resistance.

  When both the first magnetic layer 10 and the second magnetic layer 20 are magnetization free layers, for example, the magnetostriction constant of the first magnetic layer 10 is set to be different from the magnetostriction constant of the second magnetic layer 20. The

  Whether the second magnetic layer 20 is a magnetization fixed layer or a magnetization free layer, the thickness of the second magnetic layer 20 is preferably, for example, 1 nm or more and 20 nm or less.

  For example, when the second magnetic layer 20 is a magnetization fixed layer, for example, a synthetic AF structure using a laminated structure of a diamagnetic layer / magnetic layer / Ru layer / magnetic layer is used for the second magnetic layer 20. Can do. For example, IrMn is used for the diamagnetic layer. Further, as will be described later, a hard bias layer may be provided.

  In the strain sensing element 50, the spin of the magnetic layer is used. A very small size is sufficient for the area required for the strain sensing element 50. For example, when the strain sensing element 50 is considered to be a square size, the length of one side only needs to be 10 nm × 10 nm to 20 nm × 20 nm or more.

  The area of the strain sensing element 50 is made sufficiently smaller than the area of the transducer thin film 64 that is bent by pressure. Here, the transducer thin film is a portion surrounded by the fixed end as described above, and having a certain thickness and being thinner than the fixed end and being bent by external pressure. Specifically, the area of the strain sensing element 50 is 1/5 or less of the area in the substrate surface of the transducer thin film 64. In general, the size of the transducer thin film 64 is about 60 μm or more and 600 μm or less as described above. When the diameter of the transducer thin film 64 is as small as about 60 μm, the length of one side of the strain sensing element 50 is, for example, 12 μm or less. When the diameter of the transducer thin film is 600 μm, the length of one side of the strain sensing element 50 is 120 μm or less. This value is the upper limit of the size of the strain sensing element 50, for example.

  Compared with the upper limit value, the above-mentioned size having a side length of 10 nm to 20 nm is extremely small. For this reason, in consideration of the processing accuracy of the element, the necessity of making the strain sensing element 50 too small does not occur. Therefore, it is practically preferable that the size of one side of the strain sensing element 50 is, for example, about 0.5 μm to 20 μm. If the element size is extremely small, the magnitude of the demagnetizing field generated in the strain sensing element 50 becomes large, which causes problems such as difficulty in bias control of the strain sensing element 50. When the element size is increased, the problem of demagnetizing field does not occur, so that it is easy to handle from an engineering viewpoint. From this viewpoint, as described above, a preferable size is 0.5 μm or more and 20 μm or less.

  For example, the length along the X-axis direction of the strain sensing element 50 is 20 nm or more and 10 μm or less. The length of the strain sensing element 50 along the X-axis direction is preferably 200 nm or more and 5 μm or less.

  For example, the length of the strain sensing element 50 along the Y-axis direction (a direction perpendicular to the X-axis direction and parallel to the XY plane) is 20 nm or more and 10 μm or less. The length along the Y-axis direction of the strain sensing element 50 is preferably 200 nm or more and 5 μm or less.

  For example, the length along the Z-axis direction (direction perpendicular to the XY plane) of the strain sensing element 50 is 20 nm or more and 100 nm or less.

  The length of the strain sensing element 50 along the X-axis direction may be the same as or different from the length of the strain sensing element 50 along the Y-axis direction. Shape magnetic anisotropy occurs when the length of the strain sensing element 50 along the X-axis direction is different from the length of the strain sensing element 50 along the Y-axis direction. Thereby, the same effect as that obtained in the hard bias layer can be obtained.

  The direction of the current flowing in the strain sensing element 50 may be the direction from the first magnetic layer 10 toward the second magnetic layer 20 or the direction from the second magnetic layer 20 toward the first magnetic layer 10.

FIG. 6B illustrates another configuration of a part of the pressure sensor according to the first embodiment.
As shown in FIG. 6B, the strain sensing element 50 may include bias layers 55a and 55b (hard bias layer). The bias layers 55a and 55b are provided to face the strain resistance change unit 50s.

  In this example, the second magnetic layer 20 is a magnetization fixed layer. The bias layers 55 a and 55 b are juxtaposed with the second magnetic layer 20. Between the bias layers 55a and 55b, the strain resistance changing unit 50s is disposed. An insulating layer 54a is provided between the bias layer 55a and the strain resistance changing portion 50s. An insulating layer 54b is provided between the bias layer 55b and the strain resistance changing portion 50s.

  The bias layers 55 a and 55 b apply a bias magnetic field to the first magnetic layer 10. Thereby, the magnetization direction of the first magnetic layer 10 can be biased to an appropriate position, and a single magnetic domain can be formed.

  Each of the bias layers 55a and 55b (in this example, the length along the Y-axis direction) is, for example, not less than 100 nm and not more than 10 μm.

  The size of each of the insulating layers 54a and 54b (in this example, the length along the Y-axis direction) is, for example, 1 nm or more and 5 nm or less.

Next, an example of the operation of this embodiment will be described.
FIG. 7A and FIG. 7B are schematic views illustrating the operation of the pressure sensor according to the first embodiment.
FIG. 7A is a schematic cross-sectional view taken along the straight line 64d in FIG. FIG. 7B is a schematic view illustrating the operation of the pressure sensor.
FIG. 8A and FIG. 8B are schematic views illustrating the relationship between the position on the film surface of the transducer thin film and the strain.
FIG. 8A is a schematic plan view illustrating the film surface of the transducer thin film. FIG. 8B is a graph illustrating the relationship between the position on the film surface of the transducer thin film and the strain. The horizontal axis of the graph shown in FIG. 8B represents the distance from the center of gravity 64b. The vertical axis of the graph shown in FIG. 8B represents distortion.
FIG. 9A and FIG. 9B are schematic views illustrating the relationship between the position on the film surface of another transducer thin film and the strain.
FIG. 9A is a schematic plan view illustrating the film surface of another transducer thin film. FIG. 9B is a graph illustrating the relationship between the position on the film surface of another transducer thin film and the strain. The horizontal axis of the graph shown in FIG. 9B represents the distance from the center of gravity 64b. The vertical axis of the graph shown in FIG. 9B represents distortion.
FIG. 10 is a graph illustrating the optimum strain range of the strain sensing element.
The horizontal axis of the graph shown in FIG. 10 represents the distance from the center of gravity 64b. The vertical axis of the graph shown in FIG. 10 represents distortion.

  As shown in FIG. 7A, in the pressure sensor 310 according to this embodiment, the transducer thin film 64 bends by receiving stress 80 from a medium such as air. For example, stress 81 (for example, tensile stress) is applied to the transducer thin film 64 by bending the transducer thin film 64 so that the film surface 64a is convex. At this time, the stress 81 is also applied to the strain sensing element 50 provided on the film surface 64a of the transducer thin film 64 to cause distortion. Thereby, in the strain sensing element 50, the electrical resistance between the one end and the other end of the strain sensing element 50 changes according to the change in strain due to the inverse magnetostrictive effect. When the transducer thin film 64 bends so that the film surface 64 a is concave, compressive stress is applied to the transducer thin film 64.

  As shown in FIG. 7B, a signal 50 sg corresponding to the stress can be obtained from each of the plurality of strain sensing elements 50. For example, the first signal sg1 is obtained from the first strain sensing element 50A. A second signal sg2 is obtained from the second strain sensing element 50B. A third signal sg3 is obtained from the third strain sensing element 50C. A fourth signal sg4 is obtained from the fourth strain sensing element 50D. The plurality of signals 50sg are processed by the processing circuit 113.

Here, as shown in FIGS. 8A and 8B, when the shape of the film surface 64a of the transducer thin film 64 is circular, the center of gravity 64b of the film surface 64a of the transducer thin film 64 is removed. As the distance r increases, the distortion of the film surface 64a increases. At the fixed end of the transducing film 64 (the distance the position of r ₀ from the center of gravity 64b) position slightly inward from (distance from the center of gravity 64b the position of r _1), distortion of the membrane surface 64a is maximized .
Alternatively, as shown in FIGS. 9A and 9B, even when the shape of the film surface 64a of the transducer thin film 64 is a rectangle (including a square here), the film of the transducer thin film 64 is used. As the distance y from the center of gravity 64b of the surface 64a increases, the distortion of the film surface 64a increases. At the fixed end of the transducing film 64 (the distance the position of y ₀ from the center of gravity 64b) position slightly inward from (distance from the center of gravity 64b the position of y _1), distortion of the membrane surface 64a is maximized .

The fixed end of the transducing film 64 (at a distance from the center of gravity 64b is _{r 0)} is fixed to the non-hollow portion 71 (substrate 71a) at the edge 64Eg. Therefore, distortion of the fixed end of the transducing film 64 is smaller than the distortion of the position slightly inward from the fixed end (distance from the center of gravity 64b the position of y _1).

  As shown in FIG. 10, the strain sensing element 50 has an optimum strain range A1. The strain sensing element 50 cannot detect strain on the film surface 64a that is smaller than the optimum strain range A1. Regarding the distortion of the film surface 64a that is larger than the optimum strain range A1, the stress 81 applied to the strain sensing element 50 becomes excessive, and the strain generated in the strain sensing element 50 becomes excessive. Therefore, the strain sensing element 50 cannot accurately detect the strain on the film surface 64a that is larger than the optimum strain range A1. When the gauge factor (GF) of the strain sensing element 50 is relatively high, the optimum strain range A1 becomes relatively narrow. The gauge factor of the strain sensing element 50 is a change amount (dR / R) of electrical resistance per unit strain (dε).

  For this reason, for example, when the pressure sensor 310 acquires a pressure due to a loud sound (sound wave) (for example, a sound of about 140 dBspl or more), the first strain arranged at the farthest position from the center of gravity 64b among the plurality of strain sensing elements 50. The stress 81 applied to the detection element 50A may be excessive, and the strain generated in the first strain detection element 50A may be excessive. Then, the first strain sensing element 50 </ b> A cannot accurately detect the strain of the film surface 64 a and transmits the saturated first signal sg <b> 1 to the processing circuit 113.

  On the other hand, in the pressure sensor 310 according to the embodiment, the processing circuit 113 determines that the first signal sg1 of the first strain sensing element 50A is larger than the first threshold (for example, the upper limit value of the optimum strain range A1). The switching process is executed between the first strain sensing element 50A and the second strain sensing element 50B, and the second signal sg2 of the second strain sensing element 50B is output.

  On the other hand, for example, when the pressure sensor 310 acquires a pressure due to a sound (sound wave) with a small volume, the first strain sensing element 50A disposed at a position farthest from the center of gravity 64b among the plurality of strain sensing elements 50 includes the first strain sensing element 50A. Compared with the two-strain sensing element 50B, a large stress 81 is applied and a large strain is generated. Therefore, the first strain detection element 50A detects the strain of the film surface 64a with higher sensitivity and transmits the first signal sg1 to the processing circuit 113. The processing circuit 113 outputs the first signal sg1 of the first strain sensing element 50A when the first signal sg1 of the first strain sensing element 50A is within the optimal strain range A1.

  Thus, the processing circuit 113 applies the first signal sg1 obtained from the first strain sensing element 50A when an external pressure is applied to the film surface 64a of the transducer thin film 64 and the film surface 64a of the transducer thin film 64. One of the second signal sg2 obtained from the second strain sensing element 50B when an external pressure is applied is output as an output signal. Thereby, the pressure sensor 310 according to the embodiment can detect, for example, a wide range of pressure ranging from a small volume to a large volume with high sensitivity. Therefore, the pressure sensor 310 with a wide dynamic range can be realized.

When an external pressure is applied to the film surface 64a of the transducer thin film 64, the film surface 64a of the transducer thin film 64 moves. The strain on the film surface 64a of the transducer thin film 64 at that time varies depending on the position on the film surface 64a as described above. On the other hand, the signal-to-noise ratio (SNR) of the pressure sensor 310 is increased by using a plurality (N) of strain sensing elements instead of the single strain sensing element 50. The SNR improvement is expressed by the following equation.

SNR = SNR _{single element} + 20 × log (√N) (1)

  Here, the plurality of strain sensing elements 50 are electrically connected in series or in parallel. In the case where a plurality of strain sensing elements 50 can be arranged on the transducer thin film 64 as in the formula (1), using a plurality of strain sensing elements 50 is more advantageous for improving the SNR. However, in the case of a spin MEMS sensor, since an MR element is used, strain anisotropy is one of important factors. If the strain sensing elements 50 are not arranged in regions where the directions of anisotropic strain applied to the plurality of strain sensing elements 50 are the same, the ascending effect by the plurality of strain sensing elements 50 cannot be obtained.

  On the other hand, in the present embodiment, one of the necessary conditions is that the strain sensing element 50 is disposed at a location where the magnitude of strain differs when the same pressure is applied. Therefore, the following preferred embodiment is provided as an arrangement of the strain sensing elements 50 compatible with the SNR improvement by the plurality of strain sensing elements 50 as described above.

Fig.11 (a) and FIG.11 (b) are typical top views which show the example of the pressure sensor which concerns on this embodiment.
FIG. 12A to FIG. 12C are schematic views showing examples of sensor line connection forms of the present embodiment.
FIG. 11A is a schematic plan view showing an example in which the shape of the film surface of the transducer thin film is circular. FIG. 11B is a schematic plan view showing an example in which the shape of the film surface of the transducer thin film is a rectangle.

  In the example shown in FIG. 11A and FIG. 11B, the magnitude of the distortion differs in two levels. A plurality of strain sensing elements 50 are arranged on the film surface 64 a of the transducer thin film 64. In the example shown in FIG. 11A, four sensor lines are provided as sensor lines electrically connected in series. Fifteen strain sensing elements 50 are connected in series to the first A line LA1 (first line), and are arranged in the vicinity of the circumferential fixed end so as to maximize the strain. Similarly, fifteen strain detecting elements 50 are disposed in the second A line LA2 (second line) as an arrangement in which the distortion is maximized. These are symmetric positions where the xy anisotropic strain vectors are substantially the same when the transducer thin film 64 is deformed. The magnetization pinning direction of the strain sensing element 50 is set so that the strain sensing element 50 reacts at 0 degree or around 180 degrees when the 12 o'clock position is 0 degree and the 6 o'clock position is 180 degrees. The case is assumed.

  As shown in FIG. 12A, the first A line LA1 and the second A line LA2 may be connected in series to improve SNR. Alternatively, as illustrated in FIG. 12B, the first A line LA1 and the second A line LA2 may be connected in parallel to each other. Alternatively, as shown in FIG. 12C, the first A line LA1 and the second A line LA2 may be used to form a bridge circuit.

  On the other hand, the first B line LB1 (third line) and the second B line LB2 (fourth line) are both arranged at a position r closer to the center of gravity position. In this case, the strain when the same pressure as that described above is applied is smaller than that of the A line (first A line LA1 and second A line LA2: first strain sensing element group). Therefore, when detecting a louder volume, or when shipping as a product with the same SNR as other pressure sensors because of high sensitivity due to variations in the transducer thin film 64, the B line (where the amount of distortion is intentionally reduced) This example is effective when the sensor signals of the first B line BL1 and the second B line BL2 (second strain detection element group) are used as output signals. In the B line, as in the case of the A line, as shown in FIG. 12A, the first B line BL1 and the second B line LB2 may be electrically connected to each other. Alternatively, as illustrated in FIG. 12B, the first B line BL1 and the second B line BL2 may be connected in parallel to each other. Alternatively, as shown in FIG. 12C, the first B line BL1 and the second B line BL2 may form a bridge circuit.

  In the example shown in FIG. 11B, the shape of the film surface 64a of the transducer thin film 64 is a rectangle. Therefore, a region where the xy anisotropic strain can be taken can be made wider than the circular film surface 64a. Even in the case of the rectangular membrane surface 64a, since the distortion at the time of pressure application increases in the region near the fixed end, the output of the A-line sensor is higher than the output of the B-line sensor at the time of small pressure application that does not saturate the output. The output of the B line sensor is smaller than the output of the A line sensor. Similarly to the case of the circular film surface 64a, the B line is arranged at a position farther from the center of gravity than the A line. Similarly to the case of the circular film surface 64a, the first A line LA1 and the second A line LA2 may be connected in series to improve SNR (see FIG. 12A). Alternatively, the first A line LA1 and the second A line LA2 may be connected in parallel to each other (see FIG. 12B). Alternatively, the first A line LA1 and the second A line LA2 may each be used to form a bridge circuit (see FIG. 12C).

  On the other hand, both B lines are arranged at a position r closer to the center of gravity. In this case, the distortion when the same pressure as that described above is applied is smaller than that in the case of the A line. Therefore, when detecting a louder volume, or when shipping as a product with the same SNR as other pressure sensors due to variations in the transducer thin film 64, the B line placed at a position where the amount of distortion is intentionally reduced This example is effective when a sensor signal is used as an output signal. In the B line, as in the case of the A line, the first B line BL1 and the second B line LB2 may be electrically connected to each other in series (see FIG. 12A). Alternatively, the first B line BL1 and the second B line LB2 may be connected in parallel to each other (see FIG. 12B). Alternatively, the first B line LB1 and the second B line LB2 may form a bridge circuit (see FIG. 12C).

FIG. 13A and FIG. 13B are schematic plan views showing examples of the pressure sensor according to the present embodiment.
FIG. 13A is a schematic plan view showing an example in which the shape of the surface of the transducer thin film is circular. FIG. 13B is a schematic plan view showing an example in which the shape of the film surface of the transducer thin film is a rectangle.

  In each example shown in FIG. 13A and FIG. 13B, the strain sensing elements 50 arranged at different positions are not only two of the A line and the B line, but also the A line, the B line, and the C line. The case where there are three lines is shown.

The usage method is the same as the example described above with reference to FIGS.
FIG. 11A and FIG. 11B are examples of two lines of a plurality of strain sensing elements 50 connected in series at different distances from the center of gravity. FIG. 13A and FIG. 13B show an example in which the lines of the plurality of strain sensing elements 50 connected in series at different distances from the center of gravity are three lines. The number of lines is not limited to 2, 3, and may be 4, 5, or the like, as long as there are two or more sensors.

FIG. 14A and FIG. 14B are schematic diagrams showing a circuit after output of a line.
FIG. 15A and FIG. 15B are flowcharts illustrating a method for generating a control signal.
FIG. 14A and FIG. 15A show examples of two lines. FIG. 14B and FIG. 15B show examples of three lines.

  The line of the output signal LASg from the A line and the line of the output signal LBSg from the B line are connected to the multiplexer 81. The multiplexer 81 is a circuit that selects and outputs one line for input signals from a plurality of lines. A line of the control signal CSg for determining which line is output is connected to the multiplexer 81. In the example shown in FIG. 14A, the multiplexer 81 uses one of the output signal LASg of the A line and the output signal LBSg of the B line as an output signal in real time at the time of measurement based on the control signal CSg. . In the example shown in FIG. 14B, the multiplexer 81 is one of the A-line output signal LASg, the B-line output signal LBSg, and the C-line output signal LCSg in real time at the time of measurement based on the control signal CSg. One of them is used as an output signal. As to which signal from which the signal is output, the control signal CSg may be generated based on the output signal LASg from the A line and the output signal LBSg from the B line, or another sensor for control determination. May be arranged on the transducer thin film, and the control signal CSg may be generated based on the signal.

  An example in which the control signal CSg is generated based on the output signal LASg from the A line and the output signal LBSg from the B line will be described with reference to FIG. It is determined whether the output signal LASg from the A line exceeds a preset saturation threshold (first threshold) (step S51). When the output signal LASg of the A line does not exceed the first threshold value (step S51: No), the control signal CSg for selecting the A line is generated (step S52). When the output signal LASg of the A line exceeds the first threshold value (step S51: Yes), a large pressure that cannot be detected in the A line is applied, so the control signal CSg for selecting the B line is generated. (Step S53).

  A case where a C line is further provided will be described with reference to FIG. The output signal LASg of the A line is measured, and it is determined whether or not it exceeds a preset threshold value (first threshold value) of the A line (step S61). If the output signal LASg of the A line does not exceed the first threshold value (step S61: No), the control signal CSg for selecting the A line is generated (step S62). When the output signal LASg of the A line exceeds the first threshold value (step S61: Yes), the output signal LBSg of the B line is measured, and the threshold value (second threshold value) of the B line set in advance is measured. It is determined whether or not it exceeds (step S63). If the output signal LBSg of the B line does not exceed the second threshold value (step S63: No), the control signal CSg for selecting the B line is generated (step S64). When the output signal LBSg of the B line exceeds the second threshold value (step S63: Yes), a large pressure that cannot be detected is applied to both the A line and the B line, and thus the control signal for selecting the C line. CSg is generated (step S65).

  In order to make such a control determination in real time during measurement, the clock frequency of the processor that generates the control signal CSg needs to be sufficiently faster than the fluctuation of the measurement target. For pressure measurements that do not fluctuate at high speed, such as atmospheric pressure, it is originally sufficient, and even in the case of sound, even in the audible range, up to 20 kHz even at high frequencies, even when targeting ultrasonic measurement, tens to hundreds of kHz When the degree is targeted, it can be handled sufficiently. The clock frequency of the processor for generating the control signal CSg needs to be at least 100 times higher than the frequency to be measured as described above, preferably 1000 times higher, but in the case of an audible sound range up to 20 kHz. Need only have a clock frequency of 2 megahertz (MHz) to 20 MHz, and if it is an ultrasonic wave of about 100 kHz, it should have a clock frequency of about 10 MHz to 100 MHz, and should be several tens to several hundreds of MHz or more. It is. If 1 MHz ultrasonic waves are to be measured, a clock frequency of 100 MHz to 1 GHz is sufficient. In any case, although the cost varies depending on the clock frequency, the clock frequency of the processor is a value that can be sufficiently realized, and real-time selection control determination can be performed while performing measurement.

An example of the operation of this embodiment will be further described with reference to the drawings.
FIG. 16A and FIG. 16B are flowcharts illustrating the operation of the pressure sensor according to the first embodiment.

  As illustrated in FIG. 16A, when the pressure sensor 310 includes the first strain sensing element 50A and the second strain sensing element 50B, the processing circuit 113 includes the first strain sensing element 50A to the first strain sensing element 50A. The signal sg1 is received (acquired), and the second signal sg2 is received from the second strain sensing element 50B (step S11).

  Subsequently, the processing circuit 113 determines whether or not the first signal sg1 of the first strain sensing element 50A is larger than a first threshold (for example, an upper limit value of the optimum strain range A1) (step S12). When the first signal sg1 of the first strain sensing element 50A is not larger than the first threshold (step S12: No), the processing circuit 113 selects (outputs) the first signal sg1 of the first strain sensing element 50A. (Step S14). On the other hand, when the first signal sg1 of the first strain sensing element 50A is larger than the first threshold value (step S12: Yes), the processing circuit 113 includes the first strain sensing element 50A and the second strain sensing element 50B. Is switched to select (output) the second signal sg2 of the second strain sensing element 50B (step S13).

  Subsequently, the processing circuit 113 receives the first signal sg1 from the first strain sensing element 50A, receives the second signal sg2 from the second strain sensing element 50B, and repeats the operation described above with respect to steps S11 to S14 ( Step S11 to Step S14).

  As shown in FIG. 16B, when the pressure sensor 310 includes the first strain sensing element 50A, the second strain sensing element 50B, the third strain sensing element 50C, and the fourth strain sensing element 50D, The processing circuit 113 receives the first signal sg1 from the first strain sensing element 50A, receives the second signal sg2 from the second strain sensing element 50B, receives the third signal sg3 from the third strain sensing element 50C, The fourth signal sg4 is received from the fourth strain sensing element 50D (step S21).

  Subsequently, the processing circuit 113 determines whether or not the first signal sg1 of the first strain sensing element 50A is larger than a first threshold (for example, an upper limit value of the optimum strain range A1) (step S22). When the first signal sg1 of the first strain sensing element 50A is not larger than the first threshold value (step S22: No), the processing circuit 113 selects (outputs) the first signal sg1 of the first strain sensing element 50A. (Step S23). On the other hand, when the first signal sg1 of the first strain sensing element 50A is larger than the first threshold value (step S22: Yes), the processing circuit 113 includes the first strain sensing element 50A and the second strain sensing element 50B. Is switched to determine whether the second signal sg2 of the second strain sensing element 50B is larger than a second threshold (for example, the upper limit value of the optimum strain range A1) (step S24).

  When the second signal sg2 of the second strain sensing element 50A is not greater than the second threshold (step S24: No), the processing circuit 113 selects (outputs) the second signal sg2 of the second strain sensing element 50B. (Step S25). On the other hand, when the second signal sg2 of the second strain sensing element 50B is larger than the second threshold (step S24: Yes), the processing circuit 113 determines whether the second strain sensing element 50B and the third strain sensing element 50C are Is switched to determine whether the third signal sg3 of the third strain sensing element 50C is larger than a third threshold (for example, the upper limit value of the optimum strain range A1) (step S26).

  When the third signal sg3 of the third strain sensing element 50C is not larger than the third threshold (step S26: No), the processing circuit 113 selects (outputs) the third signal sg3 of the third strain sensing element 50C. (Step S28). On the other hand, when the third signal sg3 of the third strain sensing element 50C is larger than the third threshold (step S26: Yes), the processing circuit 113 determines that the third strain sensing element 50C and the fourth strain sensing element 50D are Is switched to select (output) the fourth signal sg4 of the fourth strain sensing element 50D (step S27).

  Subsequently, the processing circuit 113 receives the first signal sg1 from the first strain sensing element 50A, receives the second signal sg2 from the second strain sensing element 50B, and receives the third signal sg3 from the third strain sensing element 50C. The fourth signal sg4 is received from the fourth strain sensing element 50D, and the operations described above with respect to steps S21 to S28 are repeated (steps S21 to S28).

  Thereby, the pressure sensor 310 according to the embodiment can detect a wider range of pressures with high sensitivity. Therefore, the pressure sensor 310 having a wider dynamic range can be realized. Further, since the processing circuit 113 repeats the operation, it can execute a dynamic switching process, and can respond to a wide range of pressure ranging from a small volume to a large volume relatively quickly.

  In the pressure sensor 310 according to the embodiment, the switching clock of the processing circuit 113 needs to be sufficiently higher than the frequency of the detection pressure (for example, the pressure due to the detection sound). On the other hand, the frequency of the audible sound is, for example, about 10 kilohertz (kHz) or less. The clock frequency of the processing circuit 113 is, for example, on the order of about gigahertz (GHz). The clock frequency of the processing circuit 113 is about five digits higher than the frequency of the audible sound. Therefore, the pressure sensor 310 according to the embodiment can detect a wide frequency band pressure with high sensitivity.

(Second Embodiment)
FIG. 17 is a schematic plan view illustrating the configuration of another pressure sensor according to the second embodiment.
As shown in FIG. 17, in the pressure sensor 330, the plurality of strain sensing elements 50 are arranged at substantially equal intervals along the straight line 64c and the straight line 64d. For example, four strain sensing elements 50 are arranged on both sides of the center of the straight line 64c (corresponding to the center of gravity 64b). Four strain sensing elements 50 are arranged on both sides of the center of the straight line 64d (corresponding to the center of gravity 64b). In this example, the strain sensing element 50 is disposed at a substantially symmetric position with respect to the center of gravity 64b.

  That is, the pressure sensor 330 according to this embodiment is also provided with a plurality of strain sensing elements 50. For example, the sensor unit 72 (first sensor unit 72A) includes a first strain sensing element 50A, a second strain sensing element 50B, a third strain sensing element 50C, and a fourth strain sensing element 50.

  For example, the first strain sensing element 50A is a strain sensing element 50a, the second strain sensing element 50B is a strain sensing element 50b, the third strain sensing element 50C is a strain sensing element 50c, and the fourth strain sensing element 50D is strain sensing. Element 50d is assumed. First strain sensing element 50A (strain sensing element 50a), second strain sensing element 50B (strain sensing element 50c), third strain sensing element 50C (strain sensing element 50c), and fourth strain sensing element 50D (strain A straight line (straight line 64d and straight line 64c) connecting the detection element 50d) passes through the center of gravity 64b.

  In the pressure sensor 330, the fixing portions 67a and 67c are disposed at the intersections of the straight line 64c and the edge portion 64eg of the transducer thin film 64. The fixing part 67b and the fixing part 67d are arranged at the intersection of the straight line 64d and the edge part 64eg of the transducer thin film 64.

The fourth strain sensing element 50D, the third strain sensing element 50C, the second strain sensing element 50B, and the first strain sensing element 50A are arranged in this order along the straight line 64d from the center of gravity 64b toward the fixed portion 67d. line up.
The fourth strain sensing element 50D, the third strain sensing element 50C, the second strain sensing element 50B, and the first strain sensing element 50A are arranged in this order along the straight line 64d from the center of gravity 64b toward the fixed portion 67b. line up.
The fourth strain sensing element 50D, the third strain sensing element 50C, the second strain sensing element 50B, and the first strain sensing element 50A are arranged in this order along the straight line 64c from the center of gravity 64b toward the fixed portion 67a. line up.
The fourth strain sensing element 50D, the third strain sensing element 50C, the second strain sensing element 50B, and the first strain sensing element 50A are arranged in this order along the straight line 64c from the center of gravity 64b toward the fixed portion 67c. line up.

  For example, the first strain sensing element 50A is a strain sensing element 50a, and the second strain sensing element 50B is a strain sensing element 50c. Straight lines (straight line 64d and straight line 64c) connecting the first strain sensing element 50A (strain sensing element 50a) and the second strain sensing element 50B (strain sensing element 50c) pass through the center of gravity 64b.

  The pressure sensor 330 according to the embodiment can detect a wide range of pressure ranging from a small volume to a large volume with high sensitivity by performing the operation described above with reference to FIGS. Therefore, the pressure sensor 310 with a wide dynamic range can be realized. The pressure sensor 330 according to the embodiment can detect pressure in a wide frequency band with high sensitivity.

FIG. 18 is a schematic plan view illustrating the configuration of another pressure sensor according to the second embodiment.
As shown in FIG. 18, in the pressure sensor 331 according to the present embodiment, the shape of the fixing portion 67 is a ring shape. The fixing portion 67 extends along the edge portion 64eg of the transducer thin film 64. The fixing portion 67 continuously fixes the edge portion 64eg of the transducer thin film 64. Since the edge 64eg of the transducer thin film 64 is continuously fixed, the amount of deflection of the transducer thin film 64 can depend on the distance from the center of gravity 64b.

FIG. 19 is a schematic plan view illustrating the configuration of another pressure sensor according to the second embodiment.
As shown in FIG. 19, in another pressure sensor 332 according to the present embodiment, the plurality of strain sensing elements 50 are arranged at substantially equal intervals along the straight line 64c and the straight line 64d. Four strain sensing elements 50 are arranged on both sides of the centroid 64b in the straight line 64c, and four strain sensing elements 50 are arranged on both sides of the centroid 64b in the straight line 64d.

  Each of the pressure sensor 331 and the pressure sensor 332 can detect, for example, a wide range of pressures ranging from a small volume to a large volume with high sensitivity by performing the operation described above with reference to FIGS. 7 (a) to 16 (b). it can. Therefore, the pressure sensor 310 with a wide dynamic range can be realized. Each of the pressure sensor 331 and the pressure sensor 332 can detect a wide frequency band pressure with high sensitivity.

(Third embodiment)
The present embodiment relates to a method of manufacturing a pressure sensor (for example, a pressure sensor according to the first).
FIG. 20 is a flowchart illustrating the method for manufacturing the pressure sensor according to the third embodiment.
FIG. 21A to FIG. 21D are schematic perspective views in order of the processes, illustrating the method for manufacturing the pressure sensor according to the third embodiment.
FIG. 22 is a schematic diagram illustrating a confirmation process in the method for manufacturing a pressure sensor according to the third embodiment.
The horizontal axis of the graph shown in FIG. 22A represents the distance from the center of gravity 64b. The vertical axis of the graph shown in FIG. 22A represents distortion.
These drawings are examples of a manufacturing method of the pressure sensor 310. In FIG. 21A to FIG. 21D, the shape and size of each element are appropriately changed from those in FIG.
FIG. 22A is a graph illustrating the optimum strain range of the strain sensing element. FIG. 22B is a schematic view illustrating the operation of the pressure sensor in the confirmation process.

As shown in FIG. 20, a transducer film is formed (step S101).
For example, as shown in FIG. 21A, a transducer film 64fm to be the transducer thin film 64 is formed on the substrate 70s. For example, a silicon substrate is used as the substrate 70s. For example, a silicon oxide film is used for the transducer film 64fm. For example, in the case of forming a fixing portion 67 (for example, fixing portions 67a to 67d) that intermittently holds the edge 64eg of the transducer thin film 64 as in the pressure sensor 330 (see FIG. 17) according to the second embodiment. In this step, the transducer film 64fm may be processed to form a portion to be the fixing portion 67.

As shown in FIG. 20, the first conductive layer is formed (step S102).
For example, as shown in FIG. 21B, a conductive film is formed on the transducer film 64fm (or the transducer thin film 64), and the conductive film is processed into a predetermined shape to form the first conductive layer. (Conductive layer 61f) is formed. This conductive layer can be at least a part of the first wiring 57, for example.

As shown in FIG. 20, the strain sensing element 50 is formed (step S103).
For example, as illustrated in FIG. 21C, a laminated film that becomes the strain sensing element 50 is formed on a part of the conductive layer 61f. This laminated film is, for example, a buffer layer, a seed layer, an antiferromagnetic layer, a magnetic layer, a magnetic coupling layer, a magnetic layer, an intermediate layer, a magnetic layer, a high magnetostrictive film, and a cap film laminated in this order. including. The laminated film is processed into a predetermined shape to form the strain sensing element 50 (for example, the strain sensing elements 50a to 50d).

As shown in FIG. 20, the second conductive layer is formed (step S104).
For example, as illustrated in FIG. 21D, an insulating film (not shown) is formed so as to cover the strain sensing element 50, and a part of the insulating film is removed to expose the upper surface of the strain sensing element 50. A conductive film is formed thereon and processed into a predetermined shape to obtain a second conductive layer (conductive layer 62f).

  As shown in FIG. 20, wiring (for example, first wiring 57) connected to the first conductive layer and wiring (for example, second wiring 58) connected to the second conductive layer are formed (step S105). . The wiring may be formed by at least one of the formation of the first conductive layer and the formation of the second conductive layer. That is, at least a part of the process for processing the wiring may be performed simultaneously with at least a part of the formation of the first conductive layer, the formation of the second conductive layer, and the formation of the strain sensing element. That is, at least a part of steps S102 to S105 may be performed simultaneously within the technically possible range, and the order may be changed.

As shown in FIG. 20, etching is performed from the back surface (lower surface) of the substrate 70s (step S106). For this processing, for example, Deep-RIE is used. At this time, a Bosch process may be performed.
As a result, as shown in FIG. 21D, the cavity 70 is formed in the substrate 70s. A portion where the cavity portion 70 is not formed becomes a non-cavity portion 71. Thereby, the transducer thin film 64 is formed.

  In addition, when forming the fixing | fixed part 67 (for example, pressure sensor 331 etc.) which hold | maintains the edge part 64eg of the transducer thin film 64 continuously, etching from the back surface of the board | substrate 70s is performed simultaneously with the transducer thin film 64. A fixing portion 67 is formed.

  As described above, in this manufacturing method, a film to be the transducer thin film 64 (transducer film 64fm) is formed on the semiconductor substrate, and a film to be the strain sensing element 50 (strain resistance changing portion) is formed thereon. Then, it is patterned into the shape of the element. According to the present embodiment, after the element is formed and energization is enabled, etching is performed from the back surface of the substrate to the transducer film 64fm to form the transducer thin film 64, a highly sensitive pressure sensor can be manufactured.

  Here, there may be variations in the structure of the transducer thin film 64 manufactured by the manufacturing method described above with respect to steps S101 to S106. This may cause variations in the performance of the transducer thin film 64 (for example, SNR (signal-noise ratio)). Examples of “variation” in this example include variations between manufacturing lots.

  On the other hand, in the pressure sensor manufacturing method according to the embodiment, a confirmation test of the first strain sensing element 50A and the second strain sensing element 50B is performed (step S107). More specifically, as shown in FIGS. 22A and 22B, the first signal sg1 transmitted from the first strain sensing element 50A to the processing circuit 113 is a first threshold (for example, optimum strain). It is confirmed whether it is larger than the upper limit value of the range A1. If the first signal sg1 of the first strain sensing element 50A is not larger than the first threshold value, the first strain sensing element 50A is selected and fixed (step S108). At this time, a step of blocking the second signal sg2 transmitted from the second strain sensing element 50B to the processing circuit 113 is executed. For example, the wiring that connects the second strain sensing element 50B and the processing circuit 113 is cut (step S108).

On the other hand, when the first signal sg1 of the first strain sensing element 50A is larger than the first threshold value, the second strain sensing element 50B is selected and fixed (step S108). At this time, a step of cutting off the first signal sg1 transmitted from the first strain sensing element 50A to the processing circuit 113 is executed. For example, the wiring that connects the first strain sensing element 50A and the processing circuit 113 is cut (step S108).
22A and 22B, the two strain sensing elements 50 have been described. However, a confirmation test of three or more strain sensing elements 50 may be performed.

  According to the manufacturing method of the pressure sensor according to the embodiment, even when the performance of the transducer thin film 64 varies, the applicable strain sensing element 50 can be used more flexibly, and the pressure sensor The production efficiency can be improved.

An example of absorbing the manufacturing variation of the transducer thin film 64 will be further described with reference to the drawings.
FIG. 23A and FIG. 23B are schematic diagrams illustrating an example in which one line of a plurality of lines is fixedly output.
FIG. 23A shows an example of two lines. FIG. 23B shows an example of three lines.

  In the example of FIGS. 23A and 23B, the output signal LASg from the A line and the output signal LBSg from the B line are not switched and output in real time, but any one line is fixedly output. Thus, an electric circuit is formed. If the sensitivity of the transducer thin film 64 is good or there is manufacturing variation, it is not shipped as a pressure sensor or acoustic microphone with a different SNR with the manufacturing variation, but either the A line or the B line is used as the final output. Judgment on pre-shipment inspection Then, by setting only one line as an output signal, variation in SNR at the time of product shipment is suppressed.

  Although not shown, after the sensor device is completed, the output signal LASg from the A line and the output signal LBSg from the B line are measured. From the measurement result, it is determined which signal of which line is selected as the final output to be shipped. Based on the determination result, one of the output signal LASg of the A line and the output signal LBSg of the B line is electrically cut off to prevent the final output, and then shipped as a product. This electrical shut-off means includes a method of selecting either the A line or the B line using a selection switch (electric switch), or physically cuts the wiring (sets to a high resistance state or scratches). Any method may be used.

  FIG. 23A shows an example in the case of two lines of A line and B line. As shown in FIG. 23B, the same applies to the case of A line, B line, and C line and three lines, or four or more lines (not shown).

  In this way, pressure and sound cannot be acquired with a wide dynamic range as in the example described above with reference to FIG. 14, but even if there is manufacturing variation of the transducer thin film 64, the variation is dragged. As a final output as a product, it is possible to ship as a product having the same sensitivity and SNR.

  In the case of use of an acoustic sensor (microphone), the variation of each sensor does not matter so much when used as a single microphone. On the other hand, it may be important for applications (acoustic processing systems) such as performing noise cancellation using a plurality of microphones, performing speech recognition, and determining whether a machine is faulty or abnormal. In this case, it may be important that there are a plurality of microphones with uniform performance rather than a mixture of a single microphone with high performance and a standard performance microphone.

(Fourth embodiment)
FIG. 24 is a schematic perspective view illustrating a pressure sensor according to the fourth embodiment.
As shown in FIG. 24, the pressure sensor 360 according to the present embodiment is provided with a semiconductor circuit unit 110 in addition to the base 71a and the sensor unit 72 (first sensor unit 72A). A base 71a is provided on the semiconductor circuit part 110, and a sensor part 72 is provided on the base 71a.

  The semiconductor circuit unit 110 includes, for example, a semiconductor substrate 111 and a transistor 112.

  The semiconductor substrate 111 includes a main surface 111 a of the semiconductor substrate 111. The semiconductor substrate 111 includes an element region 111b provided on the main surface 111a. The transistor 112 is provided in the element region 111b.

  The semiconductor circuit unit 110 may include a processing circuit 113. The processing circuit 113 may be provided in the element region 111b or may be provided in other regions. The processing circuit 113 is provided at an arbitrary location in the semiconductor circuit unit 110. The processing circuit 113 may include a transistor 112 provided in the element region 111b.

  The base 71a is provided above the semiconductor circuit unit 110, for example. A hollow portion 70 is formed in the base 71a. The cavity 70 is formed above the transistor 112. The cavity 70 is formed at least above the element region 111b. A portion other than the hollow portion 70 in the base body 71 a is a non-hollow portion 71. Non-hollow part 71 is juxtaposed with cavity part 70 in a plane parallel to main surface 111a.

  In this example, the strain sensing element 50 is formed above the substrate on which the transistor 112 is formed. The transistor 112 and the strain sensing element 50 are connected not by a wire used in the mounting process but by a wiring layer formed consistently in the wafer manufacturing process. As a result, the pressure sensor can be reduced in size, and the strain can be detected with high sensitivity in a minute region.

  By forming the transistor 112 and the strain sensing element 50 on a common substrate, for example, a circuit (processing circuit 113 or the like) that processes information obtained by the sensor such as an arithmetic circuit, an amplifier circuit, or a communication circuit is distorted. It can be formed on the same substrate as the sensing element 50. By forming the high-sensitivity sensor integrally with the arithmetic circuit, it is possible to reduce the size of the system as a whole. Further, low power consumption can be realized.

  In the present embodiment, for example, a high-sensitivity sensor is used, and a circuit that performs arithmetic processing on a signal obtained by the sensor is realized as a system-on-chip on a common substrate.

  However, as already described, the semiconductor circuit unit 110 may be provided separately from the base 71a and the sensor unit 72. In this case, for example, in the packaging process, the base 71a, the sensor unit 72, and the semiconductor circuit unit 110 are arranged in one package.

FIG. 25A to FIG. 25C are schematic views illustrating the configuration of a pressure sensor according to the fourth embodiment.
FIG. 25A is a schematic perspective view, and FIG. 25B and FIG. 25C are block diagrams illustrating a pressure sensor.

  As shown in FIG. 25A, the pressure sensor 361 according to the present embodiment further includes an antenna 115 and an electrical wiring 116 in addition to the base 71a, the sensor unit 72, and the semiconductor circuit unit 110. The antenna 115 is connected to the semiconductor circuit unit 110 via the electrical wiring 116. The sensor unit 72 of the pressure sensor 361 has, for example, the same configuration as the sensor unit 72 in the pressure sensor 310 illustrated in FIGS. 1 and 2. That is, for example, the base 71a and the first sensor unit 72A are provided. The first sensor unit 72A includes a first transducer thin film 64A, a first fixing unit 67A, and a first strain sensing element 50A. In this example, the first sensor unit 72A further includes a second strain sensing element 50B. These configurations are as described above.

  As shown in FIG. 25B, the transmission circuit 117 is provided in the pressure sensor 361. The transmission circuit 117 wirelessly transmits data based on the electrical signal flowing through the strain sensing element 50. At least a part of the transmission circuit 117 can be provided in the semiconductor circuit portion 110. The semiconductor circuit unit 110 can include a transmission circuit 117 that wirelessly transmits data based on an electrical signal flowing through the strain sensing element 50.

As shown in FIG. 25C, the electronic device 118d used in combination with the pressure sensor 361 is provided with a receiving unit 118. For example, an electronic device such as a portable terminal is used as the electronic device 118d.
For example, it becomes more convenient to use a pressure sensor 361 including the transmission circuit 117 and an electronic device 118d including the reception unit 118 in combination.

  In this example, as shown in FIG. 25B, the pressure sensor 361 is provided with a receiving circuit 117r that receives a control signal from the electronic device 118d. For example, at least a part of the reception circuit 117r can be provided in the semiconductor circuit unit 110. By providing the receiving circuit 117r, for example, the operation of the pressure sensor 361 can be controlled by operating the electronic device 118d.

  As shown in FIG. 25B, in this example, the pressure sensor 361 includes, for example, an AD converter 117a connected to the strain sensing element 50 and a Manchester encoding unit 117b as the transmission circuit 117. It is done. Further, a switching unit 117c is provided to switch between transmission and reception. This switching is controlled by the timing controller 117d. As the reception circuit 117r, a data correction unit 117e, a synchronization unit 117f, and a determination unit 117g are provided. Further, a voltage controlled oscillator 117h (VCO) is provided.

  On the other hand, as shown in FIG. 25C, the electronic device 118d includes a Manchester encoding unit 117b, a switching unit 117c, a timing controller 117d, a data correction unit 117e, a synchronization unit 117f, a determination unit 117g, and a voltage controlled oscillator 117h. And a storage unit 118a and a central processing unit 118b (CPU).

(Fifth embodiment)
The present embodiment relates to a method for manufacturing a pressure sensor according to the embodiment. Below, the manufacturing method of the pressure sensor 360 is demonstrated as one example.

FIG. 26 is a flowchart illustrating the method for manufacturing the pressure sensor according to the fifth embodiment.
As shown in FIG. 26, in the method for manufacturing the pressure sensor according to the present embodiment, the transistor 112 is formed on the semiconductor substrate 111 (step S110).

  In this manufacturing method, the interlayer insulating layer 114i is formed on the semiconductor substrate 111, and the sacrificial layer 114l is formed on the transistor 112 (step S120).

  A thin film (for example, a transducing film 64fm) to be the transducing thin film 64 is formed on the interlayer insulating film 114i and the sacrificial layer 114l (step S121). In some cases, the following first conductive layer may also serve as the transducer thin film 64. In this case, step S121 is omitted.

  Then, a first conductive layer (conductive layer 61f) to be the first wiring layer 61 is formed (step S130).

  The strain sensing element 50 including the first magnetic layer 10 is formed on the first conductive layer (conductive layer 61f) on the sacrificial layer 114l (step S140).

  A second conductive layer (conductive layer 62f) to be the second wiring layer 62 is formed on the strain sensing element 50 (step S150).

  In the interlayer insulating layer, a first wiring 61c that electrically connects the first conductive layer (conductive layer 61f) to the semiconductor substrate 111, and a second conductive layer (conductive layer 62f) that is electrically connected to the semiconductor substrate 111. The second wiring 62c to be formed is formed (step S160). For example, step S160 is performed once or by a plurality of processes in at least one of the steps S110 to S150 and after step S150.

  Then, the sacrificial layer 114l is removed (step S170).

  Then, a confirmation test of the first strain sensing element 50A and the second strain sensing element 50B is performed (step S180). For example, the processing described in regard to FIG. 20, FIG. 22 (a) and FIG. 22 (b) is performed.

  Then, the first strain sensing element 50A or the second strain sensing element 50B is selected and fixed (step S190). For example, the processing described with reference to FIGS. 22A and 22B is performed.

  According to the manufacturing method of the pressure sensor according to the embodiment, even when the performance of the transducer thin film 64 varies, the applicable strain sensing element 50 can be used more flexibly, and the pressure sensor The production efficiency can be improved. In addition, a method for manufacturing a highly sensitive pressure sensor can be provided.

  In the step of removing the sacrificial layer 114l (step S170), for example, the sacrificial layer 114l is removed (for example, etched) from the upper surface of the sacrificial layer 114l (the surface of the sacrificial layer 114l opposite to the semiconductor substrate 111). Including.

(Sixth embodiment)
FIG. 27 is a schematic view illustrating the configuration of a microphone according to the sixth embodiment.
As shown in FIG. 27, the microphone 410 according to the present embodiment includes an arbitrary pressure sensor according to the embodiment and a pressure sensor of a modification thereof. In this example, a pressure sensor 310 is used. Microphone 410 is incorporated at the end of portable information terminal 510. For example, the transducer thin film 64 in the pressure sensor 360 inside the microphone 410 is substantially parallel to the surface of the portable information terminal 510 on which the display unit 420 is provided. However, the embodiment is not limited to this, and the arrangement of the transducer thin film 64 is arbitrary.

  According to the present embodiment, the microphone 410 is highly sensitive to a wide range of pressures ranging from a small volume to a large volume, for example. Therefore, a microphone 410 with a wide dynamic range can be realized. The microphone 410 is highly sensitive to a wide range of frequencies.

  The embodiments of the present invention have been described above with reference to specific examples. However, embodiments of the present invention are not limited to these specific examples. For example, regarding a specific configuration of each element such as a base, a sensor unit, a transducer thin film, a fixed unit, a strain sensing element, a magnetic layer, an intermediate layer, and a processing circuit included in a pressure sensor and a microphone, those skilled in the art The present invention is similarly implemented by appropriately selecting from known ranges, and is included in the scope of the present invention as long as similar effects can be obtained.

  Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all pressure sensors and microphones that can be implemented by those skilled in the art based on the pressure sensors and microphones described above as embodiments of the present invention are also included in the present invention as long as they include the gist of the present invention. Belongs to the range.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 10 ... 1st magnetic layer, 10a ... Magnetic laminated film, 10b ... High magnetostrictive magnetic film, 20 ... 2nd magnetic layer, 30 ... Intermediate layer, 41 ... Buffer layer, 42 ... Antiferromagnetic layer, 43 ... Magnetic layer, 44 ... Ru layer, 45 ... cap layer, 50 ... strain sensing element, 50A ... first strain sensing element, 50B ... second strain sensing element, 50C ... third strain sensing element, 50D ... fourth strain sensing element, 50a ... strain Detecting element, 50b ... Strain detecting element, 50c ... Strain detecting element, 50d ... Strain detecting element, 50f ... Multilayer film, 50s ... Strain resistance changing part, 50sg ... Signal, 51 ... First electrode, 52 ... Second electrode, 54a Insulating layer, 54b ... Insulating layer, 55a ... Bias layer, 55b ... Bias layer, 57 ... First wiring, 58 ... Second wiring, 61 ... First wiring layer, 61bf ... Insulating film, 61c ... First wiring, 61f ... Conductive layer, 61fa ... Connection pin 62 ... second wiring layer, 62c ... second wiring, 62f ... conductive layer, 62fa ... connection pillar, 62fb ... connection pillar, 64 ... transducer thin film, 64A ... first transducer thin film, 64a ... film surface, 64b ... centroid, 64c ... straight line, 64d ... straight line, 64eg ... edge, 64fm ... transducer film, 65 ... insulating layer, 65f ... insulating film, 66 ... insulating layer, 66f ... insulating film, 66o ... opening, 66p ... opening , 67 ... fixed part, 67A ... first fixed part, 67a ... fixed part, 67b ... fixed part, 67c ... fixed part, 67d ... fixed part, 70 ... cavity part, 70s ... substrate, 71 ... non-cavity part, 71a DESCRIPTION OF SYMBOLS ... Base | substrate 72 ... Sensor part 72A ... 1st sensor part 81 ... Multiplexer 110 ... Semiconductor circuit part 111 ... Semiconductor substrate 111a ... Main surface 111b ... Child region, 112 ... transistor, 112D ... drain, 112G ... gate, 112I ... element isolation insulating layer, 112M ... semiconductor layer, 112S ... source, 113 ... processing circuit, 114a ... interlayer insulating film, 114b ... interlayer insulating film, 114c ... Connection pillar 114d ... connection pillar 114e ... connection pillar 114f ... wiring section 114g ... wiring section 114h ... interlayer insulation film 114i ... interlayer insulation film 114j ... connection pillar 114k ... connection pillar 114l ... sacrificial layer, DESCRIPTION OF SYMBOLS 115 ... Antenna, 116 ... Electric wiring, 117 ... Transmission circuit, 117a ... Converter, 117b ... Manchester encoding part, 117c ... Switching part, 117d ... Timing controller, 117e ... Data correction part, 117f ... Synchronization part, 117g ... Determination part 117h ... Voltage control 117r ... receiving circuit 118 ... receiving unit 118a ... storage unit 118b ... central processing unit 118d ... electronic device 310 ... pressure sensor 321 ... pressure sensor 330 ... pressure sensor 331 ... pressure sensor 332 ... Pressure sensor, 360 ... Pressure sensor, 361 ... Pressure sensor, 410 ... Microphone, 420 ... Display unit, 510 ... Portable information terminal

Claims (4)

A substrate;
A sensor unit provided on the base;
A processing circuit for processing a signal obtained from the sensor unit;
With
The sensor unit is
A flexible transducer film;
A first strain sensing element provided on the transducer thin film;
A second strain sensing element provided on the transducer thin film and spaced apart from the first strain sensing element;
Including
The distance between the first strain sensing element and the center of gravity of the transducer thin film is shorter than the distance between the second strain sensing element and the center of gravity.
The first strain sensing element is included in a first strain sensing element group in which a plurality of strain sensing elements are connected in series,
The second strain sensing element is included in a second strain sensing element group different from the first strain sensing element group in which a plurality of strain sensing elements are connected in series.
The distance between the first strain sensing element group and the center of gravity is shorter than the distance between the second strain sensing element group and the center of gravity.
The first strain sensing element group and the second strain sensing element group are arranged along a side of the transducer thin film,
The first strain sensing element includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer provided between the first magnetic layer and the second magnetic layer,
The second strain sensing element includes a third magnetic layer, a fourth magnetic layer, and a nonmagnetic second intermediate layer provided between the third magnetic layer and the fourth magnetic layer,
The processing circuit outputs a first signal obtained from the first strain sensing element when a first pressure is applied to the transducer thin film,
The processing circuit outputs a second signal obtained from the second strain sensing element when a second pressure smaller than the first pressure is applied to the transducer thin film. The first strain sensing element group includes a first line in which a plurality of strain sensing elements are connected in series, and a plurality of strain sensing elements connected in series and provided at positions symmetrical with respect to the first line and the center of gravity. A second line, and
The second strain sensing element group includes a third line in which a plurality of strain sensing elements are connected in series, and a plurality of strain sensing elements connected in series at a position symmetrical to the third line and the center of gravity. A fourth line, and
The first line is electrically connected in series or in parallel with the second line,
The third line, the fourth coupled lines and to electrically in series or in parallel, the pressure sensor of claim 1 Symbol placement. The first strain sensing element group includes a first line in which a plurality of strain sensing elements are connected in series, and a plurality of strain sensing elements connected in series and provided at positions symmetrical with respect to the first line and the center of gravity. A second line, and
The second strain sensing element group includes a third line in which a plurality of strain sensing elements are connected in series, and a plurality of strain sensing elements connected in series at a position symmetrical to the third line and the center of gravity. A fourth line, and
The first line and the second line form a first bridge circuit;
The third line and the fourth line forms a different second bridge circuit from said first bridge circuit, a pressure sensor of claim 1 Symbol placement. A microphone comprising the pressure sensor according to any one of claims 1 to 3 .

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