JP6454629B2 - 基板液処理装置 - Google Patents
基板液処理装置 Download PDFInfo
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- JP6454629B2 JP6454629B2 JP2015208586A JP2015208586A JP6454629B2 JP 6454629 B2 JP6454629 B2 JP 6454629B2 JP 2015208586 A JP2015208586 A JP 2015208586A JP 2015208586 A JP2015208586 A JP 2015208586A JP 6454629 B2 JP6454629 B2 JP 6454629B2
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- 238000012545 processing Methods 0.000 title claims description 405
- 239000007788 liquid Substances 0.000 title claims description 320
- 239000000758 substrate Substances 0.000 title claims description 134
- 238000003860 storage Methods 0.000 claims description 47
- 230000007246 mechanism Effects 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 11
- 238000012546 transfer Methods 0.000 description 33
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 14
- 238000009434 installation Methods 0.000 description 8
- 238000005192 partition Methods 0.000 description 8
- 238000011084 recovery Methods 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/027—Pump details
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
Description
図1は、本実施形態に係る基板処理システムの概略構成を示す図である。以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
次いで、第1の実施形態の変形例(以下「第1変形例」という)について説明する。図7は、第1変形例に係る基板液処理装置100を説明するための図である。
次いで、第2の実施形態に係る基板液処理装置100について説明する。上記した第1の実施形態では、1個のタンク102に、第1、第2ポンプ106a,106bが接続されるようにしたが、第2の実施形態では、1個のタンクに対して1個のポンプが個別に接続されるようにした。
次いで、第2の実施形態の変形例(以下「第2変形例」という)について説明する。図10は、第2変形例に係る基板液処理装置100を説明するための図である。
次いで、第3の実施形態に係る基板液処理装置100について説明する。まず、処理ユニット16の概略構成について図11を参照して説明する。図11は、処理ユニット16の概略構成を示す図である。
次いで、第4の実施形態に係る基板液処理装置100について説明する。図12は、処理液供給系の概略構成を示す図である。
2 搬入出ステーション
3 処理ステーション
4 制御装置
15 搬送部
16 処理ユニット
17 基板搬送装置
20a 第1処理部
20b 第2処理部
30 収容部
100 基板液処理装置
102,102a,102b タンク
106a,106b ポンプ
130 エア供給源
131a,131b エア配管
141α,141β 機器群
Claims (10)
- 基板を搬送する搬送装置が配置される搬送部と、
前記搬送部に水平方向に隣接し、処理液を用いて前記基板を処理する液処理ユニットが配置される処理部と、
前記処理液を貯留する貯留部と、
前記貯留部に貯留された前記処理液を前記液処理ユニットへ送り出す送液機構と
を備え、
前記貯留部は、
前記搬送部の直下に配置され、
前記送液機構は、
前記処理部の直下に配置されること
を特徴とする基板液処理装置。 - 前記貯留部および該貯留部に対応する前記送液機構の機器群が複数あり、前記機器群ごとに収容部に収容されて区画されること
を特徴とする請求項1に記載の基板液処理装置。 - 前記処理部は、
前記搬送部によって前記基板が搬送される第1処理部と第2処理部とを備え、
前記送液機構は、
前記第1処理部の直下に配置され、前記貯留部に接続される第1送液機構と、
前記第2処理部の直下に配置され、前記貯留部に接続される第2送液機構と
を備えることを特徴とする請求項1または2に記載の基板液処理装置。 - 前記第1処理部と前記第2処理部とは、前記搬送部を挟んで対向する位置に設けられること
を特徴とする請求項3に記載の基板液処理装置。 - 前記貯留部と前記第1送液機構とを接続する第1液配管と、
前記貯留部と前記第2送液機構とを接続する第2液配管と
を備え、
前記第1液配管の長さが、前記第2液配管の長さと同じであること
を特徴とする請求項3または4に記載の基板液処理装置。 - 前記貯留部と前記第1送液機構とを接続する第1液配管と、
前記貯留部と前記第2送液機構とを接続する第2液配管と
を備え、
前記第1液配管および前記第1送液機構と、前記第2液配管および前記第2送液機構とは、平面視において点対称になるように配置されること
を特徴とする請求項3〜5のいずれか一つに記載の基板液処理装置。 - 前記第1送液機構および前記第2送液機構は、
エア供給部からエア配管を介して供給されるエアで駆動するポンプを備えるとともに、
前記エア供給部と前記第1送液機構のポンプとを接続する前記エア配管の長さが、前記エア供給部と前記第2送液機構のポンプとを接続する前記エア配管の長さと同じであること
を特徴とする請求項3〜6のいずれか一つに記載の基板液処理装置。 - 前記貯留部は、
第1貯留部と第2貯留部とを備え、
前記処理部は、
前記搬送部を挟んで対向する位置に設けられる第1処理部と第2処理部とを備え、
前記送液機構は、
前記第1処理部の直下に配置され、前記第1貯留部に接続される第1送液機構と、
前記第2処理部の直下に配置され、前記第2貯留部に接続される第2送液機構と
を備えることを特徴とする請求項1または2に記載の基板液処理装置。 - 前記第1貯留部と前記第1送液機構とを接続する第1液配管と、
前記第2貯留部と前記第2送液機構とを接続する第2液配管と
を備え、
前記第1液配管および前記第1送液機構を含む第1機器群と、前記第2液配管および前記第2送液機構を含む第2機器群とを有するグループが複数あり、複数の前記グループは、平面視において点対称になるように配置されること
を特徴とする請求項8に記載の基板液処理装置。 - 前記処理部は、
前記搬送部を挟んで対向する位置に設けられる第1処理部と第2処理部とを備え、
前記第1、第2処理部と前記搬送部とは、
前記第1処理部と前記搬送部とが収容される部分と、前記第2処理部が収容される部分との間で分割可能な収容部に収容されること
を特徴とする請求項1〜9のいずれか一つに記載の基板液処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104141847A TWI632634B (zh) | 2014-12-16 | 2015-12-14 | 基板液體處理裝置 |
US15/535,882 US10573539B2 (en) | 2014-12-16 | 2015-12-15 | Substrate liquid processing apparatus |
KR1020177016070A KR102384082B1 (ko) | 2014-12-16 | 2015-12-15 | 기판 액 처리 장치 |
CN201580068790.XA CN107112226B (zh) | 2014-12-16 | 2015-12-15 | 基板液处理装置 |
PCT/JP2015/085092 WO2016098776A1 (ja) | 2014-12-16 | 2015-12-15 | 基板液処理装置 |
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JP2014253576 | 2014-12-16 | ||
JP2014253576 | 2014-12-16 |
Publications (2)
Publication Number | Publication Date |
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JP2016115924A JP2016115924A (ja) | 2016-06-23 |
JP6454629B2 true JP6454629B2 (ja) | 2019-01-16 |
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JP2015208586A Active JP6454629B2 (ja) | 2014-12-16 | 2015-10-23 | 基板液処理装置 |
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US (1) | US10573539B2 (ja) |
JP (1) | JP6454629B2 (ja) |
CN (1) | CN107112226B (ja) |
TW (1) | TWI632634B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6640041B2 (ja) * | 2016-06-27 | 2020-02-05 | 株式会社荏原製作所 | 洗浄装置及び基板処理装置 |
JP6675955B2 (ja) * | 2016-08-24 | 2020-04-08 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6983008B2 (ja) * | 2017-08-28 | 2021-12-17 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP7221594B2 (ja) * | 2018-03-26 | 2023-02-14 | 株式会社Screenホールディングス | 基板処理装置 |
JP7122140B2 (ja) * | 2018-04-02 | 2022-08-19 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法、及び記憶媒体 |
JP7314634B2 (ja) * | 2019-06-11 | 2023-07-26 | 東京エレクトロン株式会社 | 塗布装置及び塗布方法 |
JP7382164B2 (ja) * | 2019-07-02 | 2023-11-16 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
Family Cites Families (8)
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US5863348A (en) * | 1993-12-22 | 1999-01-26 | International Business Machines Corporation | Programmable method for cleaning semiconductor elements |
JP4100466B2 (ja) * | 2000-12-25 | 2008-06-11 | 東京エレクトロン株式会社 | 液処理装置 |
JP4298384B2 (ja) * | 2003-06-04 | 2009-07-15 | 大日本スクリーン製造株式会社 | 液供給装置および基板処理装置 |
CN1840247A (zh) * | 2005-03-31 | 2006-10-04 | 株式会社华祥 | 洗涤装置及洗涤方法 |
JP2007273510A (ja) * | 2006-03-30 | 2007-10-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置およびその製造方法 |
JP4767783B2 (ja) * | 2006-07-26 | 2011-09-07 | 東京エレクトロン株式会社 | 液処理装置 |
JP2010232244A (ja) * | 2009-03-26 | 2010-10-14 | Dainippon Screen Mfg Co Ltd | 処理槽洗浄方法および基板処理装置 |
JP5302781B2 (ja) * | 2009-06-04 | 2013-10-02 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを格納した記憶媒体 |
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2015
- 2015-10-23 JP JP2015208586A patent/JP6454629B2/ja active Active
- 2015-12-14 TW TW104141847A patent/TWI632634B/zh active
- 2015-12-15 US US15/535,882 patent/US10573539B2/en active Active
- 2015-12-15 CN CN201580068790.XA patent/CN107112226B/zh active Active
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Publication number | Publication date |
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CN107112226A (zh) | 2017-08-29 |
TW201639067A (zh) | 2016-11-01 |
JP2016115924A (ja) | 2016-06-23 |
US10573539B2 (en) | 2020-02-25 |
CN107112226B (zh) | 2020-06-09 |
TWI632634B (zh) | 2018-08-11 |
US20180358240A1 (en) | 2018-12-13 |
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