JP6311469B2 - 物理量センサ - Google Patents
物理量センサ Download PDFInfo
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- JP6311469B2 JP6311469B2 JP2014121688A JP2014121688A JP6311469B2 JP 6311469 B2 JP6311469 B2 JP 6311469B2 JP 2014121688 A JP2014121688 A JP 2014121688A JP 2014121688 A JP2014121688 A JP 2014121688A JP 6311469 B2 JP6311469 B2 JP 6311469B2
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- 230000001133 acceleration Effects 0.000 claims description 98
- 239000000853 adhesive Substances 0.000 claims description 33
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- 230000002093 peripheral effect Effects 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 27
- 239000000758 substrate Substances 0.000 description 13
- 230000004308 accommodation Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
- G01C19/5621—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks the devices involving a micromechanical structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
- G01C19/5628—Manufacturing; Trimming; Mounting; Housings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5783—Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/071—Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Gyroscopes (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Description
本発明の第1実施形態について図面を参照しつつ説明する。図1に示されるように、物理量センサは、ケース10を備えており、当該ケース10は収容部11と蓋部12とを有する構成とされている。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対してボンディングワイヤ62を備えないものであり、その他に関しては第1実施形態と同様であるため、ここでは説明を省略する。
本発明の第3実施形態について説明する。本実施形態は、第1実施形態に対して角速度センサ30を第2凹部14の底面に配置したものであり、その他に関しては第1実施形態と同様であるため、ここでは説明を省略する。
本発明の第4実施形態について説明する。本実施形態は、第1実施形態に対して接着剤53と第1凹部13の底面との間にさらに防振手段を配置したものであり、その他に関しては第1実施形態と同様であるため、ここでは説明を省略する。
本発明の第5実施形態について説明する。本実施形態は、第1実施形態に対して振動体312と外周部313との間に梁部318を形成したものであり、その他に関しては第1実施形態と同様であるため、ここでは説明を省略する。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
11a 一面
13 第1凹部
14 第2凹部
20 加速度センサ
30 角速度センサ
40 回路基板
51 接着剤(第1接続部材)
52 接着剤(第2接続部材)
53 接着剤(防振手段)
312 振動体
Claims (8)
- 加速度に応じたセンサ信号を出力する加速度センサ(20)と、
圧電材料を用いて構成される振動体(312)を有し、前記振動体を振動させた状態で角速度が印加されると当該角速度に応じた電荷を発生し、前記電荷に応じたセンサ信号を出力する角速度センサ(30)と、
前記角速度センサおよび前記加速度センサに対して所定の処理を行う回路基板(40)と、
一面(11a)に凹部(13、14)が形成され、前記凹部内に前記加速度センサ、前記角速度センサ、前記回路基板を収容する収容部(11)と、
前記収容部と前記角速度センサの振動体との間に配置される防振手段(53、55、318)と、を備え、
前記角速度センサと前記加速度センサとが離間している物理量センサにおいて、
前記回路基板は、第1接続部材(51)を介して前記凹部の底面に配置され、
前記加速度センサは、第2接続部材(52、54)を介して前記回路基板上に積層されており、
前記角速度センサを基準とすると、前記加速度センサが3自由度の振動系とされていることを特徴とする物理量センサ。 - 前記加速度センサと前記回路基板とは、ワイヤ(62)を介して電気的に接続されており、
前記第2接続部材(52)は、前記加速度センサと前記回路基板とを機械的にのみ接続していることを特徴とする請求項1に記載の物理量センサ。 - 前記加速度センサと前記回路基板とは、前記第2接続部材(54)を介して電気的、機械的に接続されていることを特徴とする請求項1に記載の物理量センサ。
- 前記角速度センサは、前記加速度センサ上に配置されていることを特徴とする請求項1ないし3のいずれか1つに記載の物理量センサ。
- 前記角速度センサは、前記凹部の底面に配置されていることを特徴とする請求項1ないし3のいずれか1つに記載の物理量センサ。
- 前記防振手段(53)は、前記角速度センサと前記収容部との間に配置される接着剤であることを特徴とする請求項1ないし5のいずれか1つに記載の物理量センサ。
- 前記防振手段(55)は、前記角速度センサと前記収容部との間に配置される金属部材であることを特徴とする請求項1ないし6のいずれか1つに記載の物理量センサ。
- 前記角速度センサは、前記振動体の周囲に配置される外周部(313)を有し、前記振動体と前記外周部との間に前記防振手段(318)としての梁部が形成されていることを特徴とする請求項1ないし7のいずれか1つに記載の物理量センサ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014121688A JP6311469B2 (ja) | 2014-06-12 | 2014-06-12 | 物理量センサ |
PCT/JP2015/002921 WO2015190105A1 (ja) | 2014-06-12 | 2015-06-11 | 物理量センサ |
US15/308,866 US20170074653A1 (en) | 2014-06-12 | 2015-06-11 | Physical quantity sensor |
CN201580030809.1A CN106662601A (zh) | 2014-06-12 | 2015-06-11 | 物理量传感器 |
DE112015002777.7T DE112015002777T5 (de) | 2014-06-12 | 2015-06-11 | Sensor für eine physikalische Grösse |
MYPI2016704072A MY186015A (en) | 2014-06-12 | 2015-06-11 | Physical quantity sensor |
US16/444,160 US20190301866A1 (en) | 2014-06-12 | 2019-06-18 | Physical quantity sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014121688A JP6311469B2 (ja) | 2014-06-12 | 2014-06-12 | 物理量センサ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016001156A JP2016001156A (ja) | 2016-01-07 |
JP2016001156A5 JP2016001156A5 (ja) | 2016-06-16 |
JP6311469B2 true JP6311469B2 (ja) | 2018-04-18 |
Family
ID=54833216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014121688A Active JP6311469B2 (ja) | 2014-06-12 | 2014-06-12 | 物理量センサ |
Country Status (6)
Country | Link |
---|---|
US (2) | US20170074653A1 (ja) |
JP (1) | JP6311469B2 (ja) |
CN (1) | CN106662601A (ja) |
DE (1) | DE112015002777T5 (ja) |
MY (1) | MY186015A (ja) |
WO (1) | WO2015190105A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6464749B2 (ja) * | 2015-01-06 | 2019-02-06 | セイコーエプソン株式会社 | 物理量センサー、電子機器および移動体 |
JP6641878B2 (ja) * | 2015-10-21 | 2020-02-05 | セイコーエプソン株式会社 | 物理量センサー、電子機器および移動体 |
US10352960B1 (en) * | 2015-10-30 | 2019-07-16 | Garmin International, Inc. | Free mass MEMS accelerometer |
US10495663B2 (en) * | 2016-02-19 | 2019-12-03 | The Regents Of The University Of Michigan | High aspect-ratio low noise multi-axis accelerometers |
JP2019120559A (ja) * | 2017-12-28 | 2019-07-22 | セイコーエプソン株式会社 | 物理量センサー、物理量センサーの製造方法、物理量センサーデバイス、電子機器および移動体 |
US11754591B2 (en) * | 2019-11-07 | 2023-09-12 | Honeywell International Inc. | Vibrating beam accelerometer with pressure damping |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4332944A1 (de) * | 1993-09-28 | 1995-03-30 | Bosch Gmbh Robert | Sensor mit einer Quarz-Stimmgabel |
US7845226B2 (en) * | 2005-06-09 | 2010-12-07 | Panasonic Corporation | Composite sensor |
JP4534912B2 (ja) * | 2005-08-30 | 2010-09-01 | 株式会社デンソー | 角速度センサの取付構造 |
JP2007248328A (ja) * | 2006-03-17 | 2007-09-27 | Matsushita Electric Ind Co Ltd | 複合センサ |
JP2008082812A (ja) * | 2006-09-27 | 2008-04-10 | Denso Corp | センサ装置およびその製造方法 |
US8646332B2 (en) * | 2007-09-03 | 2014-02-11 | Panasonic Corporation | Inertia force sensor |
JP2009092545A (ja) * | 2007-10-10 | 2009-04-30 | Panasonic Corp | 角速度および加速度検出用複合センサ |
JP4973443B2 (ja) * | 2007-10-22 | 2012-07-11 | 株式会社デンソー | センサ装置 |
JP2011117858A (ja) * | 2009-12-04 | 2011-06-16 | Seiko Epson Corp | 物理量検出装置 |
WO2012049825A1 (ja) * | 2010-10-15 | 2012-04-19 | 日立オートモティブシステムズ株式会社 | 物理量検出装置 |
JPWO2012124282A1 (ja) * | 2011-03-11 | 2014-07-17 | パナソニック株式会社 | センサ |
JP2014021038A (ja) * | 2012-07-23 | 2014-02-03 | Seiko Epson Corp | 振動片、振動片の製造方法、振動子、電子デバイス、電子機器、および移動体 |
-
2014
- 2014-06-12 JP JP2014121688A patent/JP6311469B2/ja active Active
-
2015
- 2015-06-11 MY MYPI2016704072A patent/MY186015A/en unknown
- 2015-06-11 US US15/308,866 patent/US20170074653A1/en not_active Abandoned
- 2015-06-11 CN CN201580030809.1A patent/CN106662601A/zh active Pending
- 2015-06-11 DE DE112015002777.7T patent/DE112015002777T5/de not_active Ceased
- 2015-06-11 WO PCT/JP2015/002921 patent/WO2015190105A1/ja active Application Filing
-
2019
- 2019-06-18 US US16/444,160 patent/US20190301866A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
MY186015A (en) | 2021-06-14 |
WO2015190105A1 (ja) | 2015-12-17 |
CN106662601A (zh) | 2017-05-10 |
US20170074653A1 (en) | 2017-03-16 |
JP2016001156A (ja) | 2016-01-07 |
US20190301866A1 (en) | 2019-10-03 |
DE112015002777T5 (de) | 2017-03-02 |
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