JP6396931B2 - 方向性凝固システムおよび方法 - Google Patents
方向性凝固システムおよび方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 37
- 230000015271 coagulation Effects 0.000 title 1
- 238000005345 coagulation Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 claims description 61
- 239000010703 silicon Substances 0.000 claims description 61
- 238000009413 insulation Methods 0.000 claims description 41
- 238000007711 solidification Methods 0.000 claims description 41
- 230000008023 solidification Effects 0.000 claims description 41
- 229910002804 graphite Inorganic materials 0.000 claims description 35
- 239000010439 graphite Substances 0.000 claims description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 55
- 238000010438 heat treatment Methods 0.000 description 41
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 26
- 229910010271 silicon carbide Inorganic materials 0.000 description 26
- 238000001816 cooling Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 239000011449 brick Substances 0.000 description 15
- 239000012535 impurity Substances 0.000 description 10
- 239000011819 refractory material Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000007713 directional crystallization Methods 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000835 fiber Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000012774 insulation material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
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- 230000014509 gene expression Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021343 molybdenum disilicide Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
-
- H01L31/1804—
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- H01L31/182—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Description
本出願は、2013年3月14日に出願された米国特許仮出願第61/784,838号に対する優先権の恩典を主張するものであり、なお、当該仮出願は、参照によりその全体が本明細書に組み入れられる。
太陽電池は、太陽光を電気エネルギーに変換するその能力を用いることにより、実施可能なエネルギー源となり得る。シリコンは、半導体材料であり、太陽電池の製造で使用される受入原材料である。太陽電池の電気特性、すなわち、変換効率は、シリコンの純度に大きく依存する。シリコンを精製するために、いくつかの技術が使用されている。最も周知の技術は、「シーメンス法」と呼ばれている。この技術は、シリコン内に存在するいかなる単一の不純物もほとんど除去することが可能である。しかしながら、この技術は、不純物を除去するために、シリコンをガス相化してから、固相へと再堆積させる必要がある。本特許において説明される技術では、シリコンを液相へと溶融させ、「方向性凝固」と呼ばれる技術を用いてシリコンを凝固させることによって、不純物を非常に効率的に除去することが可能である。この技術は非常に周知であるが、本特許では、この手順のコストを著しく低減することが可能な、方向性凝固の新しい使用方法を対象としている。
以下の詳細な説明では、添付の図面を参照する。図面は、説明の一部を形成し、実例として提供されるのであって、限定としてではない。図示される態様は、当業者による本発明の主題の実施を可能にするほど十分詳細に記述されている。本発明の範囲から逸脱することなく、他の態様を用いることができ、かつ機械的、構造的、物質的変更が可能である。
外側鋳型ジャケットと、
外側鋳型ジャケットの壁部に内張りされた少なくとも1つの断熱層と、
グラファイト含有層を含む、外側鋳型ジャケットの底部に内張された少なくとも1つの熱伝導層と
を含む方向性凝固のためのシステムを含む。
Claims (9)
- 外側鋳型ジャケット、
外側鋳型ジャケットの壁部に内張された少なくとも1つの断熱層、
グラファイト含有層を含む、外側鋳型ジャケットの底部に内張された少なくとも1つの熱伝導層、
外側鋳型ジャケットの底部の外面に配置された、放射状のフィンを有する金属熱交換器
を含む鋳型と;
床面の上方に鋳型を離間しかつ鋳型と床との間に空間を規定する、支持構造体と;
該空間における1つまたは複数の流路内で空気を移動させる、空気循環システムと
を含む、方向性凝固のためのシステム。 - 放射状のフィンを有する金属熱交換器が、スチール熱交換器を含む、請求項1記載のシステム。
- 放射状のフィンを有する金属熱交換器が、脱着可能であり、かつ外側鋳型ジャケットから分離している、請求項1記載のシステム。
- 上部加熱器をさらに含む、請求項1記載のシステム。
- 空気循環システムが、前記空間内に配置された水平ファンを含む、請求項1記載のシステム。
- 前記空間内の空気の流れを制御するための1つまたは複数の調節可能なバッフルをさらに含む、請求項1記載のシステム。
- 請求項1〜6のいずれかに記載のシステムの鋳型に、ある量の溶融シリコンを配置する工程;および
熱が鋳型の底部から優先的に伝導されるように、溶融シリコンを方向性凝固させる工程
を含む、請求項1〜6のいずれかに記載のシステムを用いる方向性凝固の方法。 - 溶融シリコンを方向性凝固させる工程が、1時間あたり1〜2センチメートルの速度で溶融シリコンを方向性凝固させることを含む、請求項7記載の方法。
- 溶融シリコンを方向性凝固させる工程が、1時間あたり2〜10センチメートルの速度で溶融シリコンを方向性凝固させることを含む、請求項7記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361784838P | 2013-03-14 | 2013-03-14 | |
US61/784,838 | 2013-03-14 | ||
PCT/IB2014/001147 WO2014140901A2 (en) | 2013-03-14 | 2014-03-13 | Directional solidification system and method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016513616A JP2016513616A (ja) | 2016-05-16 |
JP6396931B2 true JP6396931B2 (ja) | 2018-09-26 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2015562399A Active JP6396931B2 (ja) | 2013-03-14 | 2014-03-13 | 方向性凝固システムおよび方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9663872B2 (ja) |
EP (1) | EP2971272A2 (ja) |
JP (1) | JP6396931B2 (ja) |
KR (1) | KR102184571B1 (ja) |
CN (1) | CN105229206B (ja) |
BR (1) | BR112015022715A2 (ja) |
TW (1) | TWI643983B (ja) |
WO (1) | WO2014140901A2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9352389B2 (en) | 2011-09-16 | 2016-05-31 | Silicor Materials, Inc. | Directional solidification system and method |
KR101697027B1 (ko) * | 2012-06-25 | 2017-01-16 | 실리코르 머티리얼즈 인코포레이티드 | 실리콘 용융물의 정제용 내화 도가니의 표면용 라이닝 및 용융 및 추가적인 방향성 고체화를 위하여 상기 도가니(들)를 이용하는 실리콘 용융물의 정제 방법 |
TWI643983B (zh) | 2013-03-14 | 2018-12-11 | 美商希利柯爾材料股份有限公司 | 定向凝固系統及方法 |
FR3034093B1 (fr) * | 2015-03-24 | 2021-01-29 | Roctool | Dispositif et procede pour le formage du verre |
CN106378439B (zh) * | 2016-09-18 | 2018-11-06 | 辽宁科技大学 | 一种双向水平定向凝固方法及装置 |
CN109290556B (zh) * | 2018-11-23 | 2024-08-06 | 安徽应流铸业有限公司 | 一种车间浇注模摆放装置 |
KR102290670B1 (ko) | 2019-12-30 | 2021-08-18 | 단국대학교 천안캠퍼스 산학협력단 | 자가나노유화 약물전달시스템을 이용한 리바록사반의 경구용 고형제 조성물 및 이의 제조방법 |
KR102362787B1 (ko) | 2019-12-30 | 2022-02-15 | 단국대학교 천안캠퍼스 산학협력단 | 리바록사반 함유 고체분산체 및 이의 제조방법 |
CN114956520B (zh) * | 2022-04-12 | 2023-09-22 | 深圳技术大学 | 非等温加热的模压方法 |
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EP2179079A1 (en) | 2007-07-20 | 2010-04-28 | BP Corporation North America Inc. | Methods and apparatuses for manufacturing cast silicon from seed crystals |
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FR2940327B1 (fr) | 2008-12-19 | 2011-02-11 | Commissariat Energie Atomique | Four de fusion-solidification comportant une modulation des echanges thermiques par les parois laterales |
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CN101928003B (zh) | 2010-08-24 | 2012-10-24 | 佳科太阳能硅(龙岩)有限公司 | 太阳能多晶硅钟罩式ds提纯炉 |
FR2964117B1 (fr) | 2010-08-27 | 2012-09-28 | Commissariat Energie Atomique | Creuset pour la solidification de lingot de silicium |
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CN102080259B (zh) | 2011-03-10 | 2012-12-26 | 无锡开日能源科技股份有限公司 | 多晶硅铸锭炉的三段式热场 |
US9352389B2 (en) * | 2011-09-16 | 2016-05-31 | Silicor Materials, Inc. | Directional solidification system and method |
CN102701213B (zh) | 2012-06-28 | 2015-02-11 | 佳科太阳能硅(龙岩)有限公司 | 定向凝固冶金法太阳能多晶硅提纯设备 |
TWI643983B (zh) | 2013-03-14 | 2018-12-11 | 美商希利柯爾材料股份有限公司 | 定向凝固系統及方法 |
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KR102184571B1 (ko) | 2020-12-01 |
CN105229206A (zh) | 2016-01-06 |
TW201447056A (zh) | 2014-12-16 |
WO2014140901A3 (en) | 2015-02-19 |
JP2016513616A (ja) | 2016-05-16 |
TWI643983B (zh) | 2018-12-11 |
US9663872B2 (en) | 2017-05-30 |
KR20160026836A (ko) | 2016-03-09 |
WO2014140901A2 (en) | 2014-09-18 |
US20160032482A1 (en) | 2016-02-04 |
CN105229206B (zh) | 2019-03-26 |
BR112015022715A2 (pt) | 2019-09-24 |
EP2971272A2 (en) | 2016-01-20 |
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