JP6203503B2 - Semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device in which a semiconductor light emitting element mounted on a substrate is sealed with a sealing resin.

  Conventionally, as this type of semiconductor light-emitting device, for example, a semiconductor light-emitting element (LED element) 82 is provided so as to be placed on each of a pair of circuit patterns (electrodes) 81 formed on a substrate 80 as shown in FIG. A sealing resin (sealing portion) 84 is filled in a dome shape inside a damming portion (annular coating) 83 that is mounted and formed linearly and annularly so as to surround the periphery of the semiconductor light emitting element 82. A semiconductor light emitting device 82 having a structure in which resin sealing is performed is disclosed (see Patent Document 1).

  In this case, the sealing resin 84 has a function of protecting the semiconductor light emitting element 82 from external environmental factors such as moisture, dust, and malignant gas to ensure reliability, and at the same time, the light emitting surface and the interface of the semiconductor light emitting element 82. , The light emitted from the light emitting portion of the semiconductor light emitting element 82 is efficiently emitted from the light emitting surface of the semiconductor light emitting element 82 into the sealing resin 84.

JP2011-258851A

  By the way, the thing of the said patent document 1 is that the semiconductor light-emitting element 82 encapsulates the semiconductor light-emitting element 82 by lighting (light-emitting) and light-extinguishing (non-light-emitting) repeatedly. Thermal expansion due to heat generation at the time and thermal contraction due to cooling at the time of extinction are repeated, and peeling (interface peeling) may occur on the surface (interface) where the sealing resin 84 and the damming portion 83 are in contact with each other.

  As a result, optical characteristics such as a decrease in light output, a deterioration in directional characteristics, and a deterioration in chromaticity distribution (when phosphors are dispersed in the sealing resin 84), an electrode opening of the semiconductor light emitting element 82 with respect to the circuit pattern, etc. There is a risk that defects such as poor electrical characteristics, reliability due to external environmental factors such as moisture and malignant gas reaching the semiconductor light emitting device 82, poor reliability such as deterioration of the semiconductor light emitting device 82, and poor appearance. There is.

  This is because the adhesiveness between the damming portion 83 and the sealing resin 84 is poor.

  Therefore, the present invention was devised in view of the above problems, and its object is to reinforce the adhesive force between the damming portion and the sealing resin by the anchor effect of the sealing resin in the damming portion. By configuring the semiconductor light emitting device, a semiconductor light emitting device having excellent characteristics such as optical characteristics, electrical characteristics, reliability, and appearance can be realized.

In order to solve the above-mentioned problem, the invention described in claim 1 of the present invention is characterized in that a die bonding pad part for mounting a semiconductor light emitting element and a die bonding pad part are spaced apart from each other and are formed on one side of the die bonding pad part. A substrate in which a first pad portion formed side by side, a second pad portion formed on a side opposite to the first pad portion of the die bonding pad portion is formed of a conductive member, and a semiconductor light emitting device mounted on the substrate A first damming portion formed on the substrate surface so as to surround the semiconductor light emitting element, the die bonding pad portion, the first pad portion, and the second pad portion without any breaks; A first sealing resin that is dammed by one damming portion and seals the semiconductor light emitting element, and the first damming portion includes a wide width portion, a narrow width portion, and the wide width portion. The first sealing resin has a shape that rises in the extending direction of the outer surface from the upper outer end of the first damming portion. The transition portion is near a side surface of the first pad portion or the second pad portion on the direction side perpendicular to the direction in which the first pad portion, the die bonding pad portion, and the second pad portion are arranged. The narrow portion is located at a portion where the line-up direction and the first damming portion intersect with each other so that the first sealing resin has an anchoring effect on the first damming portion. It is characterized by acting.

  Further, in the invention described in claim 2 of the present invention, in the first aspect, the narrow width portion forms a dent portion recessed in an outer peripheral direction of the first damming portion, and the dent portion includes the dent portion. At least a part of an element different from the semiconductor light emitting element is arranged.

Moreover, the invention described in claim 3 of the present invention is the thick portion according to claim 1 , which is provided outside the first damming portion so as to surround the first damming portion without any breaks. A second damming portion including a narrow width portion, a transition portion that is a portion in which a width between the wide width portion and the narrow width portion changes, and the first damming portion is dammed by the two damming portions, And a second sealing resin that seals the first sealing resin, and the transition portion of the second damming portion has the second sealing resin with respect to the second damming portion. It is characterized by acting to have an anchor effect .

According to a fourth aspect of the present invention, in the third aspect , the narrow portion of the first damming portion includes a first dent portion and an inner portion recessed in the outer peripheral direction of the first damming portion. Two types of dent portions, a second dent portion recessed in the circumferential direction, are formed, and the narrow width portion of the second damming portion forms a dent portion recessed in the outer circumferential direction of the second damming portion. It is characterized by this.

According to a fifth aspect of the present invention, in the fourth aspect, at least a part of an element different from the semiconductor light emitting element is disposed in the first recess of the first damming portion. it is characterized in that there.

According to a sixth aspect of the present invention, there is provided a die bonding pad portion for mounting a semiconductor light emitting element, a first portion formed apart from the die bonding pad portion and arranged side by side on the die bonding pad portion. A pad portion; a substrate on which a second pad portion formed on the opposite side of the die bonding pad portion from the first pad portion is formed of a conductive member; a semiconductor light emitting device mounted on the substrate; and a surface of the substrate. A first damming portion formed so as to surround the semiconductor light emitting element, the die bonding pad portion, the first pad portion, and the second pad portion without a break; and a dam on the first damming portion. And a first sealing resin that seals the semiconductor light emitting device, and surrounds the first damming portion without any breaks outside the first damming portion. A second damming portion including a wide width portion, a narrow width portion, and a transition portion that is a portion in which a width between the wide width portion and the narrow width portion is changed, and the second damming portion And a second sealing resin that seals the first damming portion and the first sealing resin, and the second sealing resin is outside the upper surface of the second damming portion. It has a shape that rises from the end in the extending direction of the outer surface, and the transition portion of the second damming portion acts so that the second sealing resin has an anchoring effect on the second damming portion. It is what.

According to a seventh aspect of the present invention, in the sixth aspect , the narrow width portion of the first damming portion includes a first dent portion and an inner portion recessed in the outer peripheral direction of the first damming portion. Two types of dent portions, a second dent portion recessed in the circumferential direction, are formed, and the narrow width portion of the second damming portion forms a dent portion recessed in the outer circumferential direction of the second damming portion. It is characterized by this.
According to an eighth aspect of the present invention, in the seventh aspect, at least a part of an element different from the semiconductor light emitting element is disposed in the first recess of the first damming portion. It is characterized by being.
Moreover, the invention described in claim 9 of the present invention is any one of claims 4 to 6, wherein the second sealing resin is arranged up to the upper surface of the first damming portion. It is what.

  In the semiconductor light emitting device of the present invention, the periphery of the semiconductor light emitting element mounted on the substrate is similarly formed on the substrate between the narrow width portion, the wide width portion, and the narrow width portion and the wide width portion. The semiconductor light emitting device was resin-sealed with a sealing resin surrounded by a damming portion having a transition portion, which is a portion where the width of the semiconductor layer changes, and dammed by the damming portion. Thereby, a transition part functions so that sealing resin may have an anchor effect with respect to a damming part.

  As a result, the adhesive force between the damming portion and the sealing resin is reinforced, and a semiconductor light emitting device with excellent characteristics such as optical characteristics, electrical characteristics, reliability, and appearance is realized.

It is explanatory drawing of the manufacturing process concerning the semiconductor light-emitting device of embodiment. Similarly, it is explanatory drawing of a manufacturing process. Similarly, it is explanatory drawing of a manufacturing process. Similarly, it is explanatory drawing of a manufacturing process. It is explanatory drawing of embodiment. It is explanatory drawing of an application example. It is a plane explanatory view of other application examples. It is GG cross-section explanatory drawing of FIG. It is a perspective explanatory view concerning FIG.7 and FIG.8. It is explanatory drawing of a transition part. Similarly, it is explanatory drawing of a transition part. It is explanatory drawing of a prior art example.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 11 (the same parts are given the same reference numerals). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

  First, a manufacturing method according to an embodiment of the semiconductor light emitting device of the present invention will be described below with reference to FIGS.

  First, a substrate 1 as shown in FIG. 1 (a: plan view, b: a cross-sectional view taken along line AA) is prepared. The substrate 1 is made of an insulating material or a metal material. In the case of an insulating material, a material such as glass epoxy, polyimide, liquid crystal polymer, or ceramic is used. In the case of a metal material, a material such as iron, aluminum, or copper is used.

  A circuit pattern 2 made of a conductive member is formed on the front surface 1a and the back surface 1b of the substrate 1, and the circuit pattern 2 on the front surface 1a is partially bonded to a die bonding pad 2a for die-bonding a semiconductor light emitting element 3 to be described later. Wire bonding pads 2b for bonding the bonding wires 4 to each other are formed. The circuit pattern 2 on the back surface 1b is formed with an external connection electrode 2c that is connected to an external power supply unit and receives power. The circuit pattern 2 is provided directly on the substrate surface when the substrate 1 is an insulating substrate, but is provided via an insulating layer formed on the substrate surface when the substrate 1 is a metal substrate.

  Next, as shown in FIG. 2 (a: plan view, b: BB sectional view of a), the periphery of the die bonding pad 2a and the wire bonding pad 2b is surrounded on the surface 1a of the substrate 1 without a break. A linear damming portion 5 extending in a ring shape at a predetermined height is formed.

  The damming portion 5 is composed of a resist layer formed by screen printing of resist ink or a metal layer formed by plating of a metal material, and a narrow narrow portion 5a region and a wide wide portion 5b region. And a region of a transition portion 5c, which is a portion where the width between the narrow width portion 5a and the wide width portion 5b changes. Among them, each of the narrow width portion 5a and the wide width portion 5b is formed by an outer peripheral line 6 and an inner peripheral line 7 that extend in parallel with each other when the substrate 1 is viewed from above the surface 1a side. It is set by the line 6, the line segment 7 a that is closer to the outer peripheral line 6 of the inner peripheral line 7, and the line segment 7 b that is separated from the outer peripheral line 6. Moreover, the transition part 5c is formed with the line segment 7c extended in a substantially perpendicular direction with respect to the line (an outer periphery line 6 in a present Example) which opposes the approached line segment 7a.

  The damming portion 5 has an arbitrary width and thickness of the narrow width portion 5a and the wide width portion 5b, but the ratio of the width of the narrow width portion 5a to the wide width portion 5b is (1/2) to (2 / 3): 1 is preferable. If the width difference between the narrow width portion 5a and the wide width portion 5b is large, the difference in the area of the interface with the sealing resin 10 described later (particularly, the contact area on the upper surface 5f) increases, resulting in a difference in strength in the adhesive strength. The peeling of the sealing resin 10 occurs at the narrow width portion 5a having relatively weak adhesive strength with respect to the sealing resin 10. On the other hand, if the difference in width between the narrow width portion 5a and the wide width portion 5b is small, the anchor effect of the sealing resin 10 described later is reduced, and the meaning that the narrow width portion 5a and the wide width portion 5b are provided in the damming portion 5 is meant. Fade or lose meaning.

  In other words, the region (bonding region) 8 surrounded by the damming portion 5 has an expanded portion 8 a that is expanded toward the outer peripheral line 6 in the narrow width portion 5 a of the damming portion 5.

  Next, as shown in FIG. 3 (a: plan view, b: a CC cross-sectional view), the semiconductor light emitting element 3 is placed on the die bonding pad 2a of the substrate 1 via a die bonding material (adhesive) 9. Electrodes located on the upper surface of the semiconductor light emitting element 3 are bonded by die bonding and wire-bonding the bonding wires 4 to each of the pair of electrodes 3a located on the upper surface of the semiconductor light emitting element 3 and each of the pair of wire bonding pads 2b. 3 a and the wire bonding pad 2 b are electrically connected through the bonding wire 4.

  Finally, as shown in FIG. 4 (a: plan view, b: DD cross-sectional view of a), the sealing resin 10 is filled into the damming portion 5 so as to cover the upper surface of the damming portion 5. Then, the semiconductor light emitting element 3 and the bonding wire 4 are sealed with resin. In this case, the filling of the sealing resin 10 is set to a constant amount using a dispenser (liquid metering discharge device), and the filled sealing resin 10 spreads at the upper outer end 5d of the damming portion 5 due to surface tension. At the same time, it is formed in a dome shape that rises from the upper surface outer end portion 5d of the damming portion 5 in the extending direction of the outer surface 5e of the damming portion 5 by surface tension.

  The sealing resin 10 has a function of ensuring reliability by protecting the semiconductor light emitting element 3 from external environmental factors such as moisture, dust and malignant gas, and protecting the bonding wire 4 from mechanical stresses such as vibration and impact. doing. The function of efficiently emitting light emitted from the light emitting portion of the semiconductor light emitting element 3 into the sealing resin 10 from the light emitting surface 3 b of the semiconductor light emitting element 3 by forming an interface with the light emitting surface of the semiconductor light emitting element 3. Also have.

  Thus, a series of manufacturing steps of the semiconductor light emitting device is completed. Although the manufacturing process has been described, it may be duplicated, but the structure of the semiconductor light emitting device 20 will be referred to below again with reference to FIG. 5 (a: plan view, b: a sectional view taken along line EE). I will explain.

  In the semiconductor light emitting device 20, the circuit pattern 2 is formed on the front surface 1a and the back surface 1b of the substrate 1, and among them, the die bonding pad 2a and the pair of wire bonding pads 2b are formed on the front surface 1a. On the other hand, an external connection electrode 2c that is connected to an external power supply unit and receives power is formed on the back surface 1b.

  On the die bonding pad 2a, the semiconductor light emitting element 3 is die bonded via a die bonding material (adhesive) 9, and each of the pair of electrodes 3a located on the upper surface of the semiconductor light emitting element 3 and a pair of wire bonding. By bonding the bonding wire 4 to each of the pads 2 b, the electrode 3 a located on the upper surface of the semiconductor light emitting element 3 and the wire bonding pad 2 b are electrically connected via the bonding wire 4.

  Similarly, on the surface 1a of the substrate 1, there is formed a linear damming portion 5 extending annularly at a predetermined height so as to surround the periphery of the semiconductor light emitting element 3 and the bonding wire 4 without interruption. It is composed of a narrow narrow portion 5a region, a thick wide portion 5b region, and a transition portion 5c region where the width changes between the narrow width portion 5a and the wide width portion 5b. Of these, each of the narrow width portion 5a and the wide width portion 5b is formed of an outer peripheral line 6 and an inner peripheral line 7 that extend in parallel with each other when the substrate 1 is viewed from above the surface 1a side, and It is set by the outer peripheral line 6, and the line segment 7a which approached the said outer peripheral line 6 of the inner peripheral line 7, and the separated line segment 7b. Moreover, the transition part 5c is formed with the line segment 7c extended in a substantially perpendicular direction with respect to the line (an outer periphery line 6 in a present Example) which opposes the approached line segment 7a.

  The damming portion 5 has an arbitrary width and thickness of the narrow width portion 5a and the wide width portion 5b, but the ratio of the width of the narrow width portion 5a to the wide width portion 5b is (1/2) to (2 / 3): 1 is preferable. If the width difference between the narrow width portion 5a and the wide width portion 5b is large, the difference in the area (contact area) of the interface with the sealing resin 10 increases, resulting in a difference in strength in the adhesive strength. Therefore, the sealing resin 10 is peeled off at the narrow width portion 5a having relatively low adhesive strength. On the other hand, if the difference in width between the narrow width portion 5a and the wide width portion 5b is small, the anchor effect of the sealing resin 10 is reduced, and the meaning of providing the narrow width portion 5a and the wide width portion 5b in the damming portion 5 is diminished. Or the meaning is lost.

  Therefore, the region 8 surrounded by the damming portion 5 has an expanded portion 8 a that is expanded toward the outer peripheral line 6 in the narrow width portion 5 a of the damming portion 5.

  Further, the sealing resin 10 is filled inside the damming portion 5 in a state of being dammed by the damming portion 5 so as to cover the upper surface of the damming portion 5, so that the semiconductor light emitting element 3 and the bonding wire 4 are formed. Resin-sealed. The filled sealing resin 10 is suppressed from spreading at the upper surface outer end portion 5d of the damming portion 5 by the surface tension, and at the same time, similarly from the upper surface outer end portion 5d of the damming portion 5 by the surface tension. 5 is formed in a dome shape that rises in the extending direction of the outer surface 5e.

  With this configuration of the semiconductor light emitting device, a part of the sealing resin 10 is expanded toward the outer peripheral line 6 in the narrow width portion 5a of the damming portion 5 in the region 8 surrounded by the damming portion 5. An anchor effect is generated by the inner surface of the narrow width portion 5a of the damming portion 5 in the sealing resin 10 that has entered the expanded portion 8a, and is fixed to the expanded portion 8a.

  Therefore, at the interface where the damming portion 5 (in particular, the upper surface of the damming portion 5) and the sealing resin 10 are in contact, the thermal expansion due to heat generation during the lighting of the semiconductor light emitting element 3 and the thermal contraction due to cooling during the extinction are caused. The thermal stress is suppressed and the adhesion between the damming portion and the sealing resin is reinforced, thereby preventing interfacial peeling.

  As a result, it is possible to realize a semiconductor light emitting device that has excellent characteristics such as optical characteristics, electrical characteristics, reliability, and appearance.

  Further, by disposing a part of each of the die bonding pad 2a and the wire bonding pad 2b as in the present embodiment in the extended portion 8a of the region 8 surrounded by the damming portion 5, the semiconductor light emitting element is formed on the upper surface thereof. 3 and a bonding wire 4 and other components / members can be mounted, and the diffusion portion 8a can be used for a process such as a collet for mounting a component (semiconductor light emitting element 3) related to a manufacturing apparatus in a manufacturing process or a capillary for wire bonding. It can be used as a tool work area.

  Therefore, restrictions on the manufacturing process are reduced and the degree of freedom of design is increased, and accordingly, the semiconductor light emitting device can be downsized.

  In the above embodiment, the semiconductor light emitting element 3 and the bonding wire 4 are provided in the inner region 8 surrounded by the damming portion 5 provided in a ring shape, but the semiconductor light emitting device is limited to this. The semiconductor light emitting element 3 and an element other than the semiconductor light emitting element 3 may be combined and arranged.

  For example, as shown in FIG. 6 (a: plan view, b: cross section of FF in FIG. 6a), die bonding is performed in the inner region 8 surrounded by the damming portion 5 on the surface 1a of the substrate 1. For example, a Zener diode element 30 is mounted via an adhesive 31 together with the semiconductor light emitting element 3 die-bonded to the pad 2 a via the die bonding material 9. Then, by bonding the bonding wire 4 to each of the pair of electrodes 30a located on the upper surface of the Zener diode element 30 and each of the pair of wire bonding pads 2b, the electrode 30a located on the upper surface of the Zener diode element 30 and The wire bonding pad 2 b is electrically connected through the bonding wire 4.

  In this case, the damming portion 5 is configured by the narrow width portion 5a in the same manner as the position corresponding to the wire bonding pad 2b at the position corresponding to the Zener diode element 30, and the Zener diode element 30 is formed in the same manner as the wire bonding pad 2b. It arrange | positions so that a part may be located in the expansion part 8a of the area | region 8 enclosed by the damming part 5. FIG.

  As a result, it is possible to reduce the size of a semiconductor light emitting device in which a semiconductor light emitting element and an element other than the semiconductor light emitting element are mounted in combination. Also in this case, by configuring the damming portion 5 in the region of the narrow width portion 5a, the region of the thick width portion 5b, and the region of the transition portion 5c, by the anchor effect by the sealing resin 10 that has entered the expanded portion 8a, Thermal stress caused by repeated thermal expansion due to heat generation during lighting of the semiconductor light emitting element 3 and thermal contraction due to cooling during light extinction is suppressed, and adhesion at the interface between the damming portion and the sealing resin is reinforced. This prevents interfacial delamination.

  Further, the semiconductor light emitting device 20 in which only the semiconductor light emitting element 3 is mounted is further mounted in a state where a part of the Zener diode element 30 is located in the extended portion 8 a of the region 8 surrounded by the damming portion 5. In addition, the diffusion portion 8a can be used as a work area for a process tool such as a collet for mounting parts (semiconductor light emitting element 3 and Zener diode element 30) related to a manufacturing apparatus in a manufacturing process or a capillary for wire bonding. it can.

  Therefore, restrictions on the manufacturing process are reduced and the degree of freedom of design is increased, and accordingly, the semiconductor light emitting device can be downsized.

  The semiconductor light emitting device 70 shown in FIGS. 7 to 9 (FIG. 7 is a plan view, FIG. 8 is a cross-sectional view taken along the line GG in FIG. 7, and FIG. 9 is a perspective view) The semiconductor light emitting device is mounted on the inner region surrounded by the damming portion provided on the inner side, and the semiconductor light emitting device is resin-sealed with the sealing resin dammed by the inner damming portion, and further on the outer side It has the structure which double-resin-sealed with the sealing resin dammed up by this damming part. This will be specifically described below.

  A circuit pattern 42 is formed on the front surface 41a and the back surface 41b of the substrate 41, and a pair of electrode pads 42a on which the flip-chip mounting type semiconductor light emitting element 43 is mounted is formed on the front surface 41a. An external connection electrode 42b that is connected to an external power supply unit and receives power is formed on the back surface 41b.

  The semiconductor light emitting device 43 is mounted on the pair of electrode pads 42 a via the bumps 58, and an electrode (not shown) located on the lower surface of the semiconductor light emitting device 43 and the electrode pads 42 a are electrically connected via the bumps 58. Connected.

  Similarly, on the surface 41 a of the substrate 41, a linear first damming portion (hereinafter referred to as “first damming portion”) extending annularly at a predetermined height so as to surround the periphery of the semiconductor light emitting element 43 without a break. ”44, and a linear second damming portion (hereinafter referred to as“ second ”) that extends in a ring shape at a predetermined height so as to surround the first damming portion 44 without any breaks. 54) (referred to as a “damming portion”).

  The first damming portion 44 is a transition portion that is a narrow width portion 44a region, a thick wide portion 44b region, and a portion where the width between the narrow width portion 44a and the wide width portion 44b changes. 44c, of which the narrow portion 44a and the wide portion 44b each have an outer peripheral line 45 and an inner periphery extending in parallel with each other when the substrate 41 is viewed from above the surface 41a. It is formed by a line 46.

  The narrow portion 44a is a first narrow portion (hereinafter referred to as "first narrow portion") set by a line segment 46a of the inner peripheral line 46 that is closer to the outer peripheral line 45 when viewed from above. 44aa and a second narrow portion (hereinafter referred to as "second narrow portion") set by the line segment 45a of the outer peripheral line 45 close to the inner peripheral line 46. ) 44ab. The transition portion 44c extends in a direction substantially perpendicular to the outer peripheral line 45 facing the line segment 46a approached in the first narrow width portion 44aa, and is opposed to the line segment 45a approached in the second thin line portion. It is formed by a line segment 49 extending in a direction substantially perpendicular to the peripheral line 46.

  Therefore, a region (bonding region) 47 surrounded by the first damming portion 44 is a first expansion portion (hereinafter, referred to as an outer peripheral line 45 side) of the first narrow portion 44aa of the first damming portion 44. 47a) (referred to as "first extension"). At the same time, the region (outer region) 48 between the first damming portion 44 and the second damming portion 54 is located on the inner circumferential line 46 side in the second narrow width portion 44ab of the first damming portion 44. An extended second extension part (hereinafter referred to as “second extension part”) 48 a is provided.

  Furthermore, the first sealing resin (hereinafter referred to as “first sealing resin”) 50 is blocked by the inner surface 44 d of the first damming portion 44. Filled inside, the semiconductor light emitting element 43 is resin-sealed. The filled first sealing resin 50 is suppressed from spreading at the upper surface inner end portion 44f of the first damming portion 44 by the surface tension, and at the same time, similarly, the upper surface inner end portion of the first damming portion 5 by the surface tension. It is formed in a dome shape that rises from 44 f in the extending direction of the inner surface 44 d of the one damming portion 44.

  The second damming portion 54 provided outside the first damming portion 44 includes a narrow narrow width portion 54a region, a wide wide width portion 54b region, and a narrow width portion 54a and a wide width portion 54b. Of the transition portion 54c, which is a portion where the width between the narrow portion 54a and the wide width portion 54b is viewed from above when the substrate 41 is viewed from above the surface 41a side. The outer circumferential line 55 and the inner circumferential line 56 are formed to extend in parallel to each other, and the outer circumferential line 55, a line segment 56a approaching the outer circumferential line 55 of the inner circumferential line 56, and a line segment 56b separated from the outer circumferential line 55. Is set. Moreover, the transition part 54c is formed with the line segment 56c extended in a substantially perpendicular direction with respect to the outer peripheral line 55 which opposes the approached line segment 56a.

  Therefore, the region 57 surrounded by the second damming portion 54 has an extended portion 57 a that is extended toward the outer peripheral line 55 in the narrow width portion 54 a of the second damming portion 54.

  Further, the second sealing resin (hereinafter referred to as “second sealing resin”) 60 is blocked by the inner surface 54d of the second blocking part 54 and the second blocking part 54 Filled inside, resin-sealed so as to cover the upper surface 50a of the first sealing resin 50, the upper surface 44e and the outer surface 44g of the first damming portion 44. The filling of the filled second sealing resin 60 is suppressed by the surface tension at the upper surface inner end portion 54f of the second damming portion 54, and at the same time, similarly, the upper surface inner end portion of the second damming portion 54 by the surface tension. It is formed in a dome shape that rises from 54 f in the extending direction of the inner surface 54 d of the two damming portion 54.

  By configuring the semiconductor light emitting device 70 in such a configuration, a first narrow width of the first damming portion 44 in a region 47 in which a part of the first sealing resin 50 is surrounded by the first damming portion 44. The inner surface of the first narrow portion 44aa of the first damming portion 44 enters the first expansion portion 47a extended to the outer peripheral line 45 side in the portion 44aa and enters the first sealing resin 50 that has entered the first expansion portion 47a. The anchor effect is caused and is fixed to the first extension portion 47a. Therefore, the adhesion at the interface between the first damming portion 44 (particularly the inner surface 44d of the first damming portion 44) and the first sealing resin 50 is reinforced and improved, and interfacial delamination due to thermal stress occurs. Is prevented.

  In addition, a part of the second sealing resin 60 is in the second region of the first damming portion 44 in the region (outer region) 48 between the outer side of the first damming portion 44 and the second damming portion 54. The narrow portion 44ab enters the second extension portion 48a extended to the inner peripheral line 46 side, and the second sealing resin 60 that enters the second extension portion 48a enters the second narrow portion 44ab of the first damming portion 44. An anchor effect is generated by the inner surface of the second expansion portion 48a and is fixed to the second expansion portion 48a. Therefore, the adhesion at the interface between the first damming portion 44 (particularly, the upper surface 44e and the outer surface 44g of the first damming portion 44) and the second stopper resin 60 is reinforced and improved, and the interface caused by thermal stress. Peeling is prevented.

  Further, a part of the second sealing resin 60 is an expanded portion 57 a that is expanded to the outer peripheral line 55 side in the narrow width portion 54 a of the second damming portion 54 in the region 57 surrounded by the second damming portion 54. The anchor effect by the inner side surface of the narrow width portion 54a of the second damming portion 54 is generated in the second sealing resin 60 that has entered the expansion portion 57a and is fixed to the expansion portion 57a. Therefore, the adhesion at the interface between the second damming portion 54 (particularly the inner surface 54d of the second damming portion 54) and the second sealing resin 60 is reinforced and improved, and the interfacial peeling due to thermal stress is improved. Is prevented.

  Note that the width and thickness of the narrow width portion 44a and the wide width portion 44b of the first damming portion 44 and the width and thickness of the narrow width portion 54a and the wide width portion 54b of the second damming portion 54 are arbitrary. However, it is preferable that the ratio of the width of the narrow width portion 44a and the wide width portion 44b of the first damming portion 44 is (1/2) to (2/3): 1. If the width difference between the narrow width portion 44a and the wide width portion 44b is large, the difference in the area of the interface with the second sealing resin 60 (particularly, the contact area on the upper surface 44e) increases, resulting in a difference in strength in the adhesive strength. The second sealing resin 60 is peeled off at the narrow width portion 44 a having relatively weak adhesive strength with respect to the second sealing resin 60. On the other hand, if the difference in width between the narrow width portion 44a and the wide width portion 44b is small, the anchor effect of the second sealing resin 60 is reduced, and the narrow width portion 44a and the wide width portion 44b are provided in the first damming portion 44. Meaning fades or disappears.

  Moreover, it is preferable that the ratio of the width | variety of the narrow part 54a of the 2nd damming part 54 and the wide part 54b is (2/3) or less: 1. When the difference in width between the narrow width portion 54a and the wide width portion 54b is small, the anchor effect of the second sealing resin 60 is reduced, and the meaning of providing the narrow width portion 54a and the wide width portion 54b in the second damming portion 54 is meant. Fade or lose meaning.

  The upper surface 44e of the first damming portion 44 is preferably not covered with the first sealing resin 50. By not covering the upper surface 44 e of the first damming portion 44 with the first sealing resin 50, the first sealing resin 50 enters the first expansion portion 47 a and the first damming portion 44 and the first sealing resin 50. An anchor effect occurs between At the same time, a portion of the first sealing resin 50 that rises upward from the first expansion portion 47a is formed as a convex portion that protrudes outward with respect to the other portions, and the first sealing resin 50 and the first resin An anchor effect due to the convex portion is generated between the second sealing resin 60 and the second sealing resin 60, thereby enhancing the adhesion between the two.

  The upper surface 54e of the second damming portion 54 is not covered with either the first sealing resin 50 or the second sealing resin 60, and is directly exposed to the outside. Therefore, the narrow width portion 54a can be used as a polarity mark by appropriately setting the positional relationship with the external connection electrode 42b at an asymmetrical position with respect to the approximate center of the annular second damming portion 54. Thereby, since it is not necessary to separately provide the polarity display part on the substrate 41, the apparatus can be miniaturized, and the manufacturing cost can be reduced because the process of creating the polarity display part is unnecessary.

  Further, by forming the second damming portion 54 in a color that can obtain a clear contrast with respect to other portions, such as black, for example, the polar mark due to the narrow width portion 54a is reliably recognized. Will be able to.

  The first sealing resin 50 and the second sealing resin 60 may be the same translucent resin or different translucent resins. In the case of the same resin, for example, the first sealing resin 50 is a phosphor-dispersed resin in which a phosphor is dispersed in a light-transmitting resin, and the second sealing resin 60 is a light-transmitting resin containing no additive. Is also possible. In the case of different resins, for example, the first sealing resin 50 may be a flexible silicone resin, and the second sealing resin 60 may be a hard epoxy resin.

  By the way, in any of the above semiconductor light emitting devices, the line segment forming the transition portion, which is the portion where the width between the narrow width portion and the thick width portion of the damming portion changes, is the outer line and the inner line. Although it is formed by a line segment that extends in a direction substantially perpendicular to a line that opposes the line segment that forms the narrow width portion (the above-mentioned approached line segment), the present invention is not necessarily limited to this. As shown in (an explanatory diagram of the transition part), it is opposed to the line segment (the above-mentioned close line segment) (D) forming the narrow width part (C) of the outer peripheral line (A) and the inner peripheral line (B). When the line a extending substantially perpendicular to the line (A) is set to a direction of 0 °, the line segment (E) forming the transition portion can be set to an appropriate angle θ with respect to the line a. In this case, by setting the angle θ to 0 ° or more and less than 90 °, an anchor effect with the sealing resin can be obtained, but a larger anchor effect can be obtained as the angle θ approaches 0 °.

  As shown in FIG. 11 (an explanatory diagram of the transition portion), the line segment (E) that forms the transition portion can have an appropriate accuracy (−θ) in the − direction with respect to the line a. Also by this, the anchor effect with the sealing resin can be obtained.

  Further, the connecting portion between the line segment (E) and the line segment (D) and the connecting portion between the line segment (E) and the inner peripheral line (B) are both connected linearly as shown in FIGS. Alternatively, they may be connected in a curved shape (the wide width portion 5b and the transition portion 5c in FIG. 6a).

DESCRIPTION OF SYMBOLS 1 ... Board | substrate 1a ... Front surface 1b ... Back surface 2 ... Circuit pattern 2a ... Die bonding pad 2b ... Wire bonding pad 2c ... External connection electrode 3 ... Semiconductor light emitting element 3a ... Electrode 3b ... Light-emitting surface 4 ... Bonding wire 5 ... Damping part 5a ... Narrow part 5b ... Wide part 5c ... Transition part 5d ... Upper surface outer edge part 5e ... Outer side surface 5f ... Upper surface 6 ... Outer peripheral line 7 ... Inner peripheral line 7a ... Line segment 7b ... Line segment 7c ... Line segment 8 ... Area (bonding area)
8a ... Expansion part 9 ... Die bonding material (adhesive)
DESCRIPTION OF SYMBOLS 10 ... Sealing resin 10a ... Surface 20 ... Semiconductor light-emitting device 30 ... Zener diode 31 ... Adhesive 41 ... Substrate 41a ... Front surface 41b ... Back surface 42 ... Circuit pattern 42a ... Electrode pad 42b ... External connection electrode 43 ... Semiconductor light emitting element 44 ... 1st damming part 44a ... Narrow part 44aa ... 1st narrow part 44ab ... 2nd narrow part 44b ... Wide part 44c ... Transition part 44d ... Inner side surface 44e ... Upper surface 44f ... Upper surface inner side edge part 44g ... Outer side surface 45 ... Outer peripheral line 45a ... Line segment 46 ... Inner peripheral line 46a ... Line segment 47 ... Area (bonding area)
47a ... 1st expansion part 48 ... area | region (outside area | region)
48a ... 2nd extended part 49 ... Line segment 50 ... 1st sealing resin 50a ... Upper surface 54 ... 2nd damming part 54a ... Narrow part 54b ... Wide part 54c ... Transition part 54d ... Inner side surface 54e ... Upper surface 54f ... Upper end inner surface 55 ... Outer peripheral line 56 ... Inner peripheral line 56a ... Line segment 56b ... Line segment 56c ... Line segment 57 ... Area 57a ... Expansion part 58 ... Bump 60 ... Second sealing resin 70 ... Semiconductor light emitting device

Claims (9)

A die bonding pad portion for mounting a semiconductor light emitting element;
A first pad portion that is spaced apart from the die bonding pad portion and formed along one side of the die bonding pad portion;
A substrate in which a second pad portion formed on the opposite side of the die bonding pad portion from the first pad portion is formed of a conductive member;
A semiconductor light emitting device mounted on the substrate;
A first damming portion formed on the substrate surface so as to surround the semiconductor light emitting element, the die bonding pad portion, the first pad portion, and the second pad portion without any breaks;
A first sealing resin that is blocked by the first blocking portion and seals the semiconductor light emitting element;
The first damming portion includes a wide width portion, a narrow width portion, and a transition portion that is a portion where a width between the wide width portion and the narrow width portion changes,
The first sealing resin has a shape that rises in the extending direction of the outer surface from the upper surface outer end of the first damming portion,
The transition portion is near a side surface of the first pad portion or the second pad portion on the direction side orthogonal to the direction in which the first pad portion, the die bonding pad portion, and the second pad portion are arranged. The portion where the lined-up direction and the first damming portion intersect is positioned so that the narrow width portion is located so that the first sealing resin has an anchoring effect on the first damming portion. A semiconductor light emitting device.   The narrow width portion forms a recessed portion recessed in the outer peripheral direction of the first damming portion, and at least a part of an element different from the semiconductor light emitting element is disposed in the recessed portion. The semiconductor light emitting device according to claim 1. A wide width portion, a narrow width portion, and a width between the wide width portion and the narrow width portion, which are provided outside the first damming portion so as to surround the periphery of the first damming portion without interruption. A second damming portion including a transition portion that is a changing portion;
A second sealing resin sealed by the two dams and sealing the first damming part and the first sealing resin;
The semiconductor light emitting device according to claim 1, wherein the transition portion of the second damming portion acts so that the second sealing resin has an anchor effect with respect to the second damming portion.   The narrow width portion of the first damming portion forms two types of dent portions, a first dent portion recessed in the outer circumferential direction of the first damming portion and a second dent portion recessed in the inner circumferential direction, 4. The semiconductor light emitting device according to claim 3, wherein the narrow width portion of the second damming portion forms a dent portion recessed in the outer peripheral direction of the second damming portion.   5. The semiconductor light emitting device according to claim 4, wherein at least a part of an element different from the semiconductor light emitting element is disposed in the first recess portion of the first damming portion. A die bonding pad portion for mounting a semiconductor light emitting element;
A first pad portion that is spaced apart from the die bonding pad portion and formed along one side of the die bonding pad portion;
A substrate in which a second pad portion formed on the opposite side of the die bonding pad portion from the first pad portion is formed of a conductive member;
A semiconductor light emitting device mounted on the substrate;
A first damming portion formed on the substrate surface so as to surround the semiconductor light emitting element, the die bonding pad portion, the first pad portion, and the second pad portion without any breaks;
A first sealing resin that is blocked by the first blocking portion and seals the semiconductor light emitting element;
A wide width portion, a narrow width portion, and a width between the wide width portion and the narrow width portion, which are formed outside the first damming portion so as to surround the periphery of the first damming portion without breaks. A second damming portion including a transition portion that is a changing portion;
A second sealing resin that is dammed to the second damming portion and seals the first damming portion and the first sealing resin;
The second sealing resin has a shape that rises in the extending direction of the outer surface from the upper surface outer end of the second damming portion,
The transition portion of the second damming portion acts so that the second sealing resin has an anchor effect with respect to the second damming portion.   The narrow width portion of the first damming portion forms two types of dent portions, a first dent portion recessed in the outer circumferential direction of the first damming portion and a second dent portion recessed in the inner circumferential direction, The semiconductor light emitting device according to claim 6, wherein the narrow width portion of the second damming portion forms a dent portion recessed in the outer peripheral direction of the second damming portion.   The semiconductor light emitting device according to claim 7, wherein at least a part of an element different from the semiconductor light emitting element is disposed in the first recess of the first damming portion.   The semiconductor light emitting device according to claim 4, wherein the second sealing resin is disposed up to an upper surface of the first damming portion.

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