JP6293043B2 - Semiconductor module - Google Patents

Description

  The present invention relates to a semiconductor module in which an inverter unit and a converter unit are configured in the same casing, and particularly to a technique for stabilizing the thermal characteristics of the inverter unit, the converter unit, and the casing.

  The heat dissipation structure employed in the housing of the semiconductor module is generally a structure in which grease is applied to the heat dissipation surface of the housing and then the heat dissipation fins are fastened to the heat dissipation surface of the housing with screws. Moreover, the structure using the insulating resin sheet instead of grease is also disclosed (for example, refer patent document 1).

Japanese Patent Laid-Open No. 11-204700

  Although the heat generation amount of the upper and lower IGBTs of the three-phase output inverter is almost the same, when the inverter unit and the converter unit are integrally provided in the housing, the heat generation amount of the inverter unit is larger than the heat generation amount of the converter unit. There is a problem in that non-uniformity is imparted to the thermal characteristics of the converter section by transferring heat through the heat radiating fins. For this reason, the thermal characteristics of the inverter unit and the converter unit, and consequently the thermal characteristics of the housing, are not stable.

  Then, an object of this invention is to provide the technique which can stabilize the thermal characteristic of an inverter part, a converter part, and a housing | casing in a semiconductor module.

A semiconductor module according to the present invention includes an inverter unit including semiconductor elements connected to each other, a converter unit including semiconductor elements connected to each other, a heat sink in which the inverter unit and the converter unit are disposed, and the heat sink A heat dissipating fin fixed to the side opposite to the side on which the inverter unit and the converter unit are disposed, a housing that collectively seals the inverter unit and the converter unit, and transmission from the inverter unit to the heat dissipating fin. An adjustment unit that adjusts a heat path and a heat transfer path from the converter unit to the heat radiation fin, and the adjustment unit is disposed at a portion where the inverter unit is disposed between the heat sink and the heat radiation fin. Between the 1st heat conduction part arrange | positioned at a corresponding part, the said heat sink, and the said radiation fin And a second heat conducting portion disposed in a portion corresponding to the portion in which the converter portion is disposed, wherein the first heat conducting portion and the second heat conducting portion are at least one of thickness and pattern. Are different .

According to the present invention, the adjustment unit adjusts the heat transfer path from the inverter unit to the heat radiation fin and the heat transfer path from the converter unit to the heat radiation fin, so that the inverter unit and the converter unit are thermally interfered with each other. It becomes difficult. Thereby, it becomes possible to stabilize the thermal characteristics of the inverter unit, the converter unit, and the housing. The adjustment unit includes a first heat conduction unit disposed in a portion corresponding to a portion where the inverter unit is disposed between the heat sink and the heat radiation fin, and a portion where the converter unit is disposed between the heat sink and the heat radiation fin. And a second heat conducting portion disposed at a portion corresponding to the first heat conducting portion and the second heat conducting portion are different in at least one of thickness and pattern. Thereby, it can optimize by making the distance between a housing | casing and a radiation fin uniform, and can suppress the fall of the thermal radiation performance of a semiconductor module. Furthermore, the reliability of the semiconductor module can be improved.

1 is a cross-sectional view of a semiconductor module according to a first embodiment. 4 is a plan view of a heat radiation fin in which a TIM is arranged in the semiconductor module according to Embodiment 1. FIG. It is explanatory drawing for demonstrating thermal diffusion. It is explanatory drawing for demonstrating the mutual interference by thermal diffusion. FIG. 4 is a cross-sectional view of a semiconductor module according to a second embodiment. FIG. 6 is a cross-sectional view of a semiconductor module according to a third embodiment. FIG. 6 is a cross-sectional view of a semiconductor module according to a fifth embodiment. It is explanatory drawing for demonstrating the thermal diffusion in the case of an integrated heat sink. It is explanatory drawing for demonstrating the thermal diffusion in the case of a division type heat sink. FIG. 10 is a sectional view of a semiconductor module according to a sixth embodiment. FIG. 10 is a cross-sectional view of a semiconductor module according to a ninth embodiment. FIG. 10 is a cross-sectional view of a semiconductor module according to a tenth embodiment. FIG. 38 is a cross-sectional view of a semiconductor module according to Embodiment 11;

<Embodiment 1>
Embodiment 1 of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of the semiconductor module 10 according to the first embodiment, and FIG. 2 is a plan view of the radiation fin 6 in which the TIMs 9a and 9b are arranged in the semiconductor module 10.

  As shown in FIGS. 1 and 2, the semiconductor module 10 includes an inverter unit 7 a, a converter unit 7 b, an insulating layer 3, a heat sink 4, a heat radiating fin 6, a housing 1, and an adjustment unit 20. ing.

  Inverter unit 7a and converter unit 7b include semiconductor elements connected to each other. More specifically, the two semiconductor elements included in the inverter unit 7a and the two semiconductor elements included in the converter unit 7b are joined to the metal plate 2 such as copper by a metal material 8 such as solder. The two semiconductor elements included in the inverter unit 7a are joined to each other by a wire 9 such as Al or copper, and are joined to the metal plate 2 serving as a terminal by the wire 9. The two semiconductor elements included in the converter unit 7 b are joined to each other by the wire 9 and are joined to the metal plate 2 to which the semiconductor element is joined by the wire 9.

  An insulating layer 3 is formed on the upper surface of the heat sink 4, and an inverter unit 7 a and a converter unit 7 b bonded to the metal plate 2 are disposed on the upper surface of the insulating layer 3. The inverter unit 7 a and the converter unit 7 b are resin-sealed by a transfer mold type casing 1 in a state where the inverter unit 7 a and the converter unit 7 b are arranged on the upper surface of the heat sink 4 with the insulating layer 3 interposed therebetween. That is, the inverter unit 7 a and the converter unit 7 b are integrally (collectively) sealed by the housing 1. The lower surface of the heat sink 4 is exposed from the housing 1, and grease 5 and a TIM (Thermal Interface Material) 9a (the first interface) are disposed on the lower surface of the heat sink 4 (the side opposite to the side where the inverter unit 7a and the converter unit 7b are disposed). 1 heat conduction part) and TIM 9b (second heat conduction part) and are fixed to the radiation fins 6.

  The adjustment unit 20 includes a TIM 9a and a TIM 9b, and adjusts a heat transfer path from the inverter unit 7a to the heat radiation fin 6 and a heat transfer path from the converter unit 7b to the heat radiation fin 6.

  Next, TIM 9a and TIM 9b will be described. As shown in FIG. 2, the TIM 9 a is disposed in a portion corresponding to the portion where the inverter portion 7 a is disposed between the heat sink 4 and the heat radiating fin 6, and the warp of the portion where the inverter portion 7 a is disposed in the housing 1. It has a thickness and pattern that match the quantity. The TIM 9b is disposed in a portion corresponding to a portion where the converter portion 7b is disposed between the heat sink 4 and the heat radiating fin 6, and has a thickness and a pattern according to a warp amount of the portion where the converter portion 7b is disposed in the housing 1. have. Therefore, TIM 9a and TIM 9b are different from each other in at least one of thickness and pattern.

  Next, functions and effects of the semiconductor module 10 according to the first embodiment will be described. First, mutual interference due to thermal diffusion generated in the semiconductor module according to the base technology will be described with reference to FIGS. 3 and 4. FIG. 3 is an explanatory diagram for explaining thermal diffusion, and FIG. 4 is an explanatory diagram for explaining mutual interference due to thermal diffusion.

  FIG. 3 shows the result of thermal simulation with one semiconductor element arranged on the upper surface of the heat sink via an insulating layer. The semiconductor element can be considered as a heating element with respect to thermal diffusion. is there. Here, the thickness of the semiconductor element: 150 μm, the thickness of the metal plate: 100 μm, the thickness of the insulating layer: 100 μm, and the thickness of the heat sink (alumina insulating substrate): 1000 μm.

  Assuming that the heat generation from the semiconductor element is 10 W (a general heat generation amount of a product of about 600 V / 15 A), a simple thermal simulation shows that after 4 seconds, the heat diffuses at 45 °. Therefore, a housing that hardly interferes with each other can be designed in consideration of 45 ° thermal diffusion from the semiconductor element that is a heating element.

  FIG. 4 shows a result of thermal simulation in a state where two semiconductor elements (IGBT) 27a and 27b having different calorific values are arranged on the upper surface of the heat sink via an insulating layer. Here, the heat generation amount of the left semiconductor element 27a is 40 W, and the heat generation amount of the right semiconductor element 27b is 10 W. Then, it can be imagined that the left high-heat-generating semiconductor element 27a interferes with the right-side low-heat-generating semiconductor element 27b, and the change in thermal characteristics due to heat generation unique to the right semiconductor element 27a disappears. As described above, in the semiconductor module according to the base technology, the thermal characteristics of the two semiconductor elements 27a and 27b having different calorific values, and thus the thermal characteristics of the casing, are not stable.

  On the other hand, in the semiconductor module 10 according to the first embodiment, the adjustment unit 20 adjusts the heat transfer path from the inverter unit 7a to the heat radiation fin 6 and the heat transfer path from the converter unit 7b to the heat radiation fin 6. Therefore, the inverter unit 7a and the converter unit 7b are less likely to be thermally interfered with each other. Thereby, it becomes possible to stabilize the thermal characteristics of the inverter unit 7a, the converter unit 7b, and the housing 1.

  Here, since the general method is used for the weight management of the grease 5 applied between the housing 1 and the radiating fins 6, it is caused by the difference in heat generation between the converter unit 7 b and the inverter unit 7 a. There is a concern that the amount of warpage between the portion of the housing 1 where the converter unit 7b is disposed and the portion of the inverter unit 7a is unbalanced, and the heat dissipation performance of the semiconductor module is degraded. Furthermore, there has been concern about a decrease in reliability due to thermal history.

  However, the adjustment unit 20 includes a TIM 9a disposed in a portion corresponding to a portion where the inverter unit 7a is disposed between the heat sink 4 and the heat radiation fin 6 and a converter unit 7b between the heat sink 4 and the heat radiation fin 6. TIM 9b disposed in a portion corresponding to the portion to be disposed, and TIM 9a and TIM 9b differ in at least one of thickness and pattern. Thereby, it can optimize by making the distance between the housing | casing 1 and the radiation fin 6 uniform, and can suppress the fall of the thermal radiation performance of the semiconductor module 10. FIG. Furthermore, the reliability of the semiconductor module 10 can be improved. As described above, it is possible to improve the durability and the yield of the semiconductor module 10.

<Embodiment 2>
Next, a semiconductor module 10A according to the second embodiment will be described. FIG. 5 is a cross-sectional view of the semiconductor module 10A according to the second embodiment. In the second embodiment, the same components as those described in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 5, in the second embodiment, the adjustment unit 20 includes a groove 11 provided between the portion where the inverter portion 7a is disposed in the heat sink 4 and the portion where the converter portion 7b is disposed. Yes. The groove 11 is provided in a penetrating manner in the short direction of the heat sink 4 (the depth direction in FIG. 5) between the portion where the inverter portion 7a is disposed at the lower portion of the heat sink 4 and the portion where the converter portion 7b is disposed. ing. The lower side of the groove portion 11 faces the grease 5, and the heat insulating layer is constituted by the groove portion 11.

  As described above, in the semiconductor module 10A according to the second embodiment, the adjustment unit 20 includes the groove 11 provided between the portion where the inverter portion 7a is disposed and the portion where the converter portion 7b is disposed in the heat sink 4. Prepare. Therefore, the heat transfer path is divided into a heat transfer path from the inverter section 7a to the heat dissipation fin 6 and a heat transfer path from the converter section 7b to the heat dissipation fin 6 before being transferred to the heat dissipation fin 6, and the groove 11 By configuring the heat insulation layer, the inverter unit 7a and the converter unit 7b are less likely to be thermally interfered with each other.

<Embodiment 3>
Next, a semiconductor module according to the third embodiment will be described. FIG. 6 is a cross-sectional view of the semiconductor module 10B according to the third embodiment. In the third embodiment, the same components as those described in the first and second embodiments are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 6, in the third embodiment, the adjustment unit 20 includes a portion corresponding to the portion where the inverter portion 7a is disposed on the side where the heat sink 4 is fixed in the radiating fin 6 and the converter portion 7b. The groove part 12 provided between the part corresponding to the part to be provided is provided. The groove portion 12 is located between the portion corresponding to the portion where the inverter portion 7a is disposed and the portion corresponding to the portion where the converter portion 7b is disposed on the upper portion (side to which the heat sink 4 is fixed) of the radiating fin 6. The heat radiating fins 6 are provided in a penetrating manner in the short direction (depth direction in FIG. 6). The upper side of the groove part 12 faces the grease 5, and the heat insulating layer is constituted by the groove part 12.

  As described above, in the semiconductor module 10B according to the third embodiment, the adjustment unit 20 includes the part corresponding to the part where the inverter part 7a is disposed on the side where the heat sink 4 is fixed in the radiating fin 6 and the converter part 7b. The groove part 12 provided between the part corresponding to the part arrange | positioned is provided. Therefore, by constituting the heat insulating layer with the groove 12, the inverter 7a and the converter 7b are less likely to be thermally interfered with each other.

<Embodiment 4>
Next, a semiconductor module according to the fourth embodiment will be described with reference to FIGS. Note that in the fourth embodiment, the same components as those described in the first to third embodiments are denoted by the same reference numerals and description thereof is omitted.

  In the fourth embodiment, as in the case of the first embodiment, the adjustment unit 20 includes a TIM 9a and a TIM 9b. Further, the TIM 9a and the TIM 9b are configured so that the thermal conductivity of the TIM 9a is larger than the thermal conductivity of the TIM 9b.

  As described above, in the semiconductor module according to the fourth embodiment, the adjustment unit 20 includes the TIM 9a disposed in the portion corresponding to the portion where the inverter unit 7a is disposed between the heat sink 4 and the heat radiation fin 6, and the heat sink. 4 and radiating fins 6 and TIM 9b disposed in a portion corresponding to the portion where converter portion 7b is disposed, and the thermal conductivity of TIM 9a is larger than the thermal conductivity of TIM 9b. Therefore, the inverter unit 7a is arranged to reduce the amount of warping of the casing 1 due to heat generation by increasing the heat dissipation performance on the inverter unit 7a side that generates more heat than the converter unit 7b and lowering the heat dissipation performance on the converter unit 7b side. And the portion where the converter portion 7b is arranged can be made to be approximately the same. Thereby, the reliability of the semiconductor module can be improved.

<Embodiment 5>
Next, a semiconductor module according to the fifth embodiment will be described. FIG. 7 is a cross-sectional view of a semiconductor module 10C according to the fifth embodiment. Note that in the fifth embodiment, the same components as those described in the first to fourth embodiments are denoted by the same reference numerals, and description thereof is omitted.

  As shown in FIG. 7, in the fifth embodiment, the adjustment unit 20 includes a dividing unit 13 that divides the heat sink into a part 4a where the inverter part 7a is arranged and a part 4b where the converter part 7b is arranged. Yes. As the heat sink is divided, the insulating layer disposed on the upper surface of the heat sink 4 is also divided into a portion 3a where the inverter portion 7a is disposed and a portion 3b where the converter portion 7b is disposed.

  Next, the difference in thermal diffusion between the case of the integrated heat sink (integrated insulating substrate) and the case of the divided heat sink (divided insulating substrate) will be described with reference to FIGS. FIG. 8 is an explanatory diagram for explaining thermal diffusion in the case of an integrated heat sink, and FIG. 9 is an explanatory diagram for explaining thermal diffusion in the case of a split type heat sink.

  As shown in FIG. 8, in the case of an integrated heat sink, the left side high heat generation (40 W) semiconductor element 27 a starts thermal interference with the right side low heat generation (10 W) semiconductor element 27 b at 0.21 sec. It can be seen that thermal interference occurs even at 0.61 sec. As shown in FIG. 9, in the case of a split type heat sink, there is no thermal interference even at the time of 0.61 sec. Recognize.

  As described above, in the semiconductor module 10C according to the fifth embodiment, the adjusting unit 20 includes the dividing unit 13 that divides the heat sink into the part 4a where the inverter unit 7a is arranged and the part 4b where the converter unit 7b is arranged. Prepare. Therefore, the heat transfer path is divided by the heat sink before the heat is transferred to the heat radiating fins 6, and the thermal characteristics of the inverter unit 7a and the converter unit 7b are obtained by the heat insulating effect by the casing 1 (mold resin) having a lower thermal conductivity than the heat sink. Can be prevented from interfering with each other.

<Embodiment 6>
Next, a semiconductor module 10D according to the sixth embodiment will be described. FIG. 10 is a cross-sectional view of a semiconductor module 10D according to the sixth embodiment. Note that in the sixth embodiment, the same components as those described in the first to fifth embodiments are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 10, in the sixth embodiment, the adjusting unit 20 includes a converter portion 7b and a portion corresponding to the portion where the inverter portion 7a is disposed on the side where the heat sink 4 is fixed in the radiating fin 6. The groove part 14 provided between the part corresponding to the part to be provided is provided. The groove 14 is formed in a shape that narrows from the opening toward the depth direction (for example, a triangular shape in cross-sectional view). The upper side of the groove part 14 faces the grease 5, and the heat insulating layer is constituted by the groove part 14.

  As described above, in the semiconductor module 10D according to the sixth embodiment, the groove portion 14 is formed in a shape that narrows from the opening toward the depth direction. Therefore, by forming the heat insulating layer with the groove portion 14, the inverter portion 7a and Converter parts 7b are less likely to be thermally interfered with each other.

  Furthermore, it is possible to improve the heat radiation performance of the semiconductor module 10D by making the heat capacity larger than that of the heat radiation fin 6 of the third embodiment.

<Embodiment 7>
Next, a semiconductor module according to the seventh embodiment will be described with reference to FIG. Note that in the seventh embodiment, the same components as those described in the first to sixth embodiments are denoted by the same reference numerals, and description thereof is omitted.

  In the seventh embodiment, as in the case of the fifth embodiment, the adjusting unit 20 divides the heat sink into a part 4a where the inverter part 7a is arranged and a part 4b where the converter part 7b is arranged. It has. As the heat sink is divided, the insulating layer disposed on the upper surface of the heat sink 4 is also divided into a portion 3a where the inverter portion 7a is disposed and a portion 3b where the converter portion 7b is disposed.

  Furthermore, in the seventh embodiment, for example, in the heat sink, the heat conductivity of the portion 4a where the inverter portion 7a is disposed in the heat sink is larger than the heat conductivity of the portion 4b where the converter portion 7b is disposed. The part 4a where the inverter part 7a is arranged is made of a copper material, and the part 4b where the converter part 7b is arranged is made of aluminum.

  As described above, since the thermal conductivity of the portion 4a where the inverter portion 7a is disposed in the heat sink is larger than the thermal conductivity of the portion 4b where the converter portion 7b is disposed, The heat dissipation performance can be improved, and the reliability of the semiconductor module can be improved by making the amount of warpage of the housing 1 uniform.

<Eighth embodiment>
Next, a semiconductor module according to Embodiment 8 will be described with reference to FIG. Note that in the eighth embodiment, the same components as those described in the first to seventh embodiments are denoted by the same reference numerals, and description thereof is omitted.

  In the eighth embodiment, as in the fifth embodiment, the adjusting unit 20 divides the heat sink into a part 4a where the inverter part 7a is arranged and a part 4b where the converter part 7b is arranged. It has. As the heat sink is divided, the insulating layer disposed on the upper surface of the heat sink 4 is also divided into a portion 3a where the inverter portion 7a is disposed and a portion 3b where the converter portion 7b is disposed.

  Further, in the eighth embodiment, the portion 3a in which the inverter portion 7a in the insulating layer is arranged is made of a material using boron nitride as a filler, and the portion 3b in which the converter portion 7b is arranged is a material using alumina as a filler. It consists of Therefore, the thermal conductivity of the portion 3a where the inverter portion 7a is disposed in the insulating layer is larger than the thermal conductivity of the portion 3b where the converter portion 7b is disposed.

  As described above, the semiconductor module according to the eighth embodiment further includes the insulating portion disposed between the inverter portion 7a and the converter portion 7b and the heat sink, and the portion 3a of the insulating layer where the inverter portion 7a is disposed. The thermal conductivity is larger than the thermal conductivity of the portion 3b where the converter unit 7b is disposed. Therefore, it is possible to improve the initial heat dissipation performance on the inverter section 7a side, which is the high heat generation side, and to improve the reliability of the semiconductor module by making the amount of warpage of the housing 1 uniform.

<Embodiment 9>
Next, a semiconductor module 10E according to the ninth embodiment will be described. FIG. 11 is a cross-sectional view of a semiconductor module 10E according to the ninth embodiment. Note that in the ninth embodiment, the same components as those described in the first to eighth embodiments are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 11, in the ninth embodiment, the adjustment unit 20 includes a heat conductive layer 15 having a thermal conductivity larger than the thermal conductivity of the radiating fin 6. The heat conductive layer 15 is formed in a portion corresponding to the portion where the inverter portion 7 a is disposed in the heat radiating fin 6, and the upper surface of the heat conductive layer 15 is in contact with the grease 5.

  As described above, in the semiconductor module 10E according to the ninth embodiment, the adjustment unit 20 is based on the thermal conductivity of the radiating fin 6 formed in a portion corresponding to the portion where the inverter portion 7a is disposed in the radiating fin 6. Includes a heat conductive layer 15 having a large thermal conductivity. Therefore, the heat dissipation performance on the inverter unit 7a side, which is the high heat generation side, can be improved, and the reliability of the semiconductor module 10E can be improved by equalizing the temperature rise of the inverter unit 7a and the converter unit 7b. It becomes possible.

<Embodiment 10>
Next, a semiconductor module 10F according to the tenth embodiment will be described. FIG. 12 is a cross-sectional view of the semiconductor module 10F according to the tenth embodiment. Note that in the tenth embodiment, the same components as those described in the first to ninth embodiments are denoted by the same reference numerals and description thereof is omitted. Moreover, in FIG. 12, the inverter part 7a and the converter part 7b are simplified.

  As shown in FIG. 12, in the tenth embodiment, the adjusting unit 20 includes a dividing unit 16 that divides the heat sink into a part 4a where the inverter part 7a is arranged and a part 4b where the converter part 7b is arranged. Yes. Along with the division of the heat sink, the insulating layer arranged on the upper surface of the heat sink is also divided into a part 3a where the inverter part 7a is arranged and a part 3b where the converter part 7b is arranged. Furthermore, the side surface of the portion 4a where the inverter portion 7a is disposed in the heat sink and the side surface of the portion 3b where the converter portion 7b facing the side surface are formed are inclined surfaces. In FIG. 12, the inclination angles α of these side surfaces are each set to 45 degrees, for example.

  As described above, in the semiconductor module 10F according to the tenth embodiment, the side surface of the portion 4a where the inverter portion 7a is disposed in the heat sink and the side surface of the portion 4b where the converter portion 7b facing the side surface are inclined Surface. Therefore, in the case of forming a casing having isotropic thermal conductivity and low thermal conductivity, for example, by dividing the heat conduction in a heat insulating manner with a transfer mold resin, the inverter unit 7a and the converter unit 7b are mutually connected. It becomes difficult to interfere.

<Embodiment 11>
Next, a semiconductor module 10G according to the eleventh embodiment will be described. FIG. 13 is a cross-sectional view of a semiconductor module 10G according to the eleventh embodiment. In the eleventh embodiment, the same components as those described in the first to tenth embodiments are denoted by the same reference numerals, and the description thereof is omitted. Moreover, in FIG. 13, the inverter part 7a and the converter part 7b are simplified.

  As shown in FIG. 13, in the eleventh embodiment, the adjustment unit 20 includes a part 6 a corresponding to the part where the inverter fins 7 a are arranged for the heat radiation fin and a part 6 b corresponding to the part where the converter part 7 b is arranged. A dividing unit 19 is provided to divide into two. Moreover, the housing | casing 1 is provided with the projection part 17 which each fits in the part 6a corresponding to the part in which the inverter part 7a in a radiation fin is arrange | positioned, and the part 6b in which the converter part 7b is arrange | positioned. .

  The housing 1 and the heat radiating fin are fixed by fitting the protrusions 17 to the portion 6a corresponding to the portion where the inverter portion 7a is disposed and the portion 6b corresponding to the portion where the converter portion 7b is disposed. In this state, each screw 18 is tightened.

  As described above, in the semiconductor module 10G according to the eleventh embodiment, the adjustment unit 20 corresponds to the portion 6a corresponding to the portion where the inverter portion 7a is disposed and the portion where the converter portion 7b is disposed. A dividing unit 19 is provided that divides the portion 6b. Therefore, since heat is not transferred to the inverter unit 7a and the converter unit 7b after transferring heat to the heat sink, the electrical characteristics of the inverter unit 7a and the converter unit 7b are not easily affected by mutual heat generation.

  Since the housing | casing 1 is provided with the projection part 17 fitted with a radiation fin, it can prevent rotating in the state which the radiation fin was fixed to the housing | casing 1. FIG.

  It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

  DESCRIPTION OF SYMBOLS 1 Case, 3 Insulation layer, 6 Radiation fin, 7a Inverter part, 7b Converter part, 9a, 9b TIM 10, 10A, 10B, 10C, 10D, 10E, 10F, 10G Semiconductor module, 11, 12, 14 Groove part, 13, 16, 19 Division part, 15 heat conductive layer, 20 adjustment part.

Claims (5)

An inverter unit including semiconductor elements connected to each other;
A converter unit including semiconductor elements connected to each other;
A heat sink in which the inverter unit and the converter unit are disposed;
Radiation fins fixed to the side opposite to the side where the inverter part and the converter part are arranged in the heat sink,
A housing that collectively seals the inverter unit and the converter unit;
An adjustment unit that adjusts a heat transfer path from the inverter unit to the radiating fin and a heat transfer path from the converter unit to the radiating fin;
Equipped with a,
The adjustment unit includes a first heat conduction unit disposed in a portion corresponding to a portion where the inverter unit is disposed between the heat sink and the heat radiation fin, and the heat treatment between the heat sink and the heat radiation fin. A second heat conducting portion disposed in a portion corresponding to the portion in which the converter portion is disposed,
The first heat conducting unit and the second heat conducting unit are semiconductor modules in which at least one of thickness and pattern is different . An inverter unit including semiconductor elements connected to each other;
A converter unit including semiconductor elements connected to each other;
A heat sink in which the inverter unit and the converter unit are disposed;
Radiation fins fixed to the side opposite to the side where the inverter part and the converter part are arranged in the heat sink,
A housing that collectively seals the inverter unit and the converter unit;
An adjustment unit that adjusts a heat transfer path from the inverter unit to the radiating fin and a heat transfer path from the converter unit to the radiating fin;
With
The adjustment unit includes a first heat conduction unit disposed in a portion corresponding to a portion where the inverter unit is disposed between the heat sink and the heat radiation fin, and the heat treatment between the heat sink and the heat radiation fin. A second heat conducting portion disposed in a portion corresponding to the portion in which the converter portion is disposed,
The thermal conductivity of the first heat conductive portion is greater than the thermal conductivity of the second conductive portion, the semi-conductor module. An inverter unit including semiconductor elements connected to each other;
A converter unit including semiconductor elements connected to each other;
A heat sink in which the inverter unit and the converter unit are disposed;
Radiation fins fixed to the side opposite to the side where the inverter part and the converter part are arranged in the heat sink,
A housing that collectively seals the inverter unit and the converter unit;
An adjustment unit that adjusts a heat transfer path from the inverter unit to the radiating fin and a heat transfer path from the converter unit to the radiating fin;
With
The adjustment unit includes a dividing unit that divides the heat sink into a part where the inverter part is arranged and a part where the converter part is arranged,
Further comprising an insulating layer disposed between the inverter unit and the converter unit and the heat sink;
The thermal conductivity of the portion where the inverter unit in the insulating layer is disposed is greater than the thermal conductivity of the portion where the converter unit is arranged, semi conductor module. An inverter unit including semiconductor elements connected to each other;
A converter unit including semiconductor elements connected to each other;
A heat sink in which the inverter unit and the converter unit are disposed;
Radiation fins fixed to the side opposite to the side where the inverter part and the converter part are arranged in the heat sink,
A housing that collectively seals the inverter unit and the converter unit;
An adjustment unit that adjusts a heat transfer path from the inverter unit to the radiating fin and a heat transfer path from the converter unit to the radiating fin;
With
The adjustment unit, wherein the inverter unit in the heat radiation fins are formed in a portion corresponding to the portion disposed, comprises a heat conducting layer having a thermal conductivity greater than the thermal conductivity of the heat radiating fins, a semi-conductor module . An inverter unit including semiconductor elements connected to each other;
A converter unit including semiconductor elements connected to each other;
A heat sink in which the inverter unit and the converter unit are disposed;
Radiation fins fixed to the side opposite to the side where the inverter part and the converter part are arranged in the heat sink,
A housing that collectively seals the inverter unit and the converter unit;
An adjustment unit that adjusts a heat transfer path from the inverter unit to the radiating fin and a heat transfer path from the converter unit to the radiating fin;
With
The adjustment unit includes a dividing unit that divides the heat sink into a part where the inverter part is arranged and a part where the converter part is arranged,
Wherein a side surface of the portion where the inverter unit is disposed in the heat sink, side portions where the converter unit to face the side surface is disposed is an inclined surface, semi-conductor module.