JP6290741B2 - Grating coupler forming method - Google Patents

Description

  The present invention relates to a technique for temporarily forming a grating coupler in an optical circuit, and relates to a method for forming a grating coupler that can be applied to inspection of an optical circuit at a wafer level.

  Optical devices, including silicon photonics and other material systems, are manufactured on a wafer and cut from the wafer into chips. Light is input to the wafer end surface of the optical device via an optical fiber. In this case, in a high refractive index material such as silicon, the size of the cross section of the waveguide is on the order of several hundred microns, and in order to reduce the loss of the end face coupling with the optical fiber, an SSC (Spot size converter) or the like is integrated A structure is used (see Non-Patent Document 1).

  In recent years, silicon photonics has an advantage that an optical circuit can be manufactured by a CMOS manufacturing process because of its affinity with an electronic circuit. In this case, a specific manufacturing process such as SSC is not used. There is an example in which a fabricationable GC (Grating coupler) is built in an optical circuit and used for wafer inspection (see Non-Patent Document 2).

T. Shoji, T. Tsuchizawa, T. Watanabe, K. Yamada, H. Morita, “Low loss mode size converter from 0.3 μm square Si wire waveguides to single mode fibers”, Electronics Letters, Vol. 38, No. 25, p.1669-1670, 2002 Attila Mekis, Steffen Gloeckner, Gianlorenzo Masini, Adithyaram Narasimha, Thierry Pinguet, Subal Sahni, and Peter De Dobbelaer, “A Grating-Coupler-Enabled CMOS Photonics Platform”, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, Vol. 3, p.597-608, 2011

  In the end face coupling between the conventional optical fiber and the chip, the loss of light becomes a problem, and the device fabrication process for reducing the loss has a problem with the compatibility with the conventional CMOS fabrication process. Further, when the optical device is cut out into chips and inspected for each chip by end face bonding, there is a problem that the inspection cost is higher than the inspection at the wafer level.

  In wafer inspection using GC, it is necessary to make GC in an optical circuit in advance, and the inspection location is limited to the location where GC is created. In addition, when light is constantly emitted from the GC, there is a loss corresponding to the output light. Alternatively, if it is desired to output light from the GC only at the time of inspection, it is necessary to build an optical switch in the previous stage of the GC, and there is a problem that it is necessary to build up an excessive loss of the optical switch and a drive system of the optical switch. It was.

  The present invention has been made in order to solve the above-described problem, and a grating coupler that can temporarily form a grating coupler at an arbitrary position on a wafer and can suppress steady light loss due to the grating coupler. An object is to provide a forming method.

The method of forming a grating coupler of the present invention generates a periodic light intensity distribution by irradiating light onto a wafer on which an optical waveguide made of a semiconductor is formed, and generates the optical light by generating carriers in the semiconductor in response to the light irradiation. A grating coupler is formed in the optical waveguide by periodically changing the refractive index of the waveguide.
Also, one configuration example of the method of forming a grating coupler of the present invention is characterized in that a periodic light intensity distribution is generated on the wafer by light interference.
Also, one configuration example of the method of forming a grating coupler according to the present invention is characterized in that a periodic light intensity distribution is generated on the wafer by irradiating the wafer with light whose intensity changes periodically. It is.

  According to the present invention, the grating coupler can be temporarily formed on the wafer on which the optical waveguide is formed, and the application of the physical stimulus is stopped when the grating coupler is no longer necessary, thereby eliminating the grating coupler. Can do. In the present invention, since it is not necessary to make the grating coupler in the optical circuit in advance, when the method for forming a grating coupler of the present invention is applied to the inspection of the optical circuit, the inspection portion is limited to the portion in which the grating coupler is formed. Therefore, it is possible to inspect a grating coupler freely formed at an arbitrary position. Further, in the present invention, since the grating coupler can be turned off when the grating coupler is no longer necessary, steady light loss due to the grating coupler does not occur. In addition, when the method for forming a grating coupler of the present invention is applied to inspection of an optical circuit, the inspection of the optical circuit formed on the wafer can be performed in the state of the wafer without cutting it into chips, and the inspection is performed at the wafer level. By performing the above, it is possible to reduce the cost because it is possible to sort chips and eliminate unnecessary packaging and inspection.

It is a figure explaining the grating coupler formation method concerning a 1st embodiment of the present invention. It is a figure which shows the calculation result of a grating coupler. It is sectional drawing explaining the grating coupler formation method which concerns on the 2nd Embodiment of this invention. It is sectional drawing explaining the grating coupler formation method which concerns on the 3rd Embodiment of this invention. It is sectional drawing explaining the grating coupler formation method which concerns on the 1st reference example of this invention. It is a figure explaining the grating coupler formation method concerning the 3rd reference example of the present invention. It is the top view and sectional drawing which show the structure of the wafer used as object by the 4th reference example of this invention. It is a figure explaining the grating coupler formation method concerning the 4th reference example of the present invention. It is the top view and sectional drawing which show the structure of the wafer used as object by the 5th reference example of this invention. It is a figure explaining the grating coupler formation method concerning the 5th reference example of the present invention.

[First Embodiment]
Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1A to 1C are cross-sectional views for explaining a method of forming a grating coupler according to the first embodiment of the present invention. FIG. 1A is a diagram showing a grating coupler (hereinafter referred to as GC) on a silicon wafer. FIG. 1B is a diagram illustrating a light intensity distribution on a silicon wafer, a carrier (free electron) distribution on the silicon wafer, and a refractive index distribution of silicon. (C) is sectional drawing explaining a mode that light is radiated | emitted from a silicon wafer.

  In this embodiment, light irradiation is used as a physical stimulus for a silicon wafer, a periodic light intensity distribution is generated on the silicon wafer by light interference, and a refractive index change is caused by the interaction between the light and the waveguide material. Thus, a GC is temporarily formed in the silicon waveguide to enable light input / output to / from the silicon waveguide.

  A silicon photonics optical circuit is formed on the silicon wafer 1, and includes a silicon substrate 2, a silicon oxide film 3 on the silicon substrate 2, a silicon waveguide 4 on the silicon oxide film 3, and a silicon waveguide 4. The silicon oxide film 5 is formed. 1A to 1C, the direction parallel to the silicon wafer 1 is the X direction, and the normal direction of the silicon wafer 1 is the Z direction.

  In the present embodiment, light is caused to interfere by the two-beam interference method. Specifically, the silicon wafer 1 is irradiated with light 10 and 11 in a wavelength band absorbed by silicon from two directions as shown in FIG. Light having a wavelength greater than or equal to the band gap energy of silicon is absorbed by silicon, and light having a wavelength of about 1127 nm or less is absorbed by silicon. Lights 10 and 11 incident from two directions interfere to form a periodic distribution of light intensity I on the silicon wafer 1 as shown in FIG.

The period Λ of the distribution of the light intensity I is determined by the light wavelength and the incident angle. As shown in FIG. 1A, assuming that the incident angles of the two lights 10 and 11 are the angles formed with the normal line of the silicon wafer 1, and θ1 and θ2, respectively, the period Λ is expressed by the following equation. λ is the wavelength of the light 10 or 11.
Λ = λ / (sin θ1 + sin θ2) (1)

  In the case of a silicon optical circuit for 1550 nm, which is the communication wavelength band, the light in the silicon waveguide 4 can be coupled to the radiation light in the vertical direction by using a GC with a period of about 630 nm. In this case, for example, light 10 and 11 having a wavelength of 850 nm is applied to the silicon wafer 1 by θ1 = θ2 = 42 deg. , The light intensity distribution with a period of about 630 nm can be formed on the silicon wafer 1.

  Since silicon absorbs light and carriers (free electrons) are generated, the real part and imaginary part of the refractive index of silicon change due to the generation of this carrier (references "RICHARD A.SOREF, AND BRIAN R.BENNETT "Electrooptical Effects in Silicon", IEEE Journal of Quantum Electronics, Vol. QE-23, No. 1, p. 123-129, 1987 "). Therefore, by generating a periodic light intensity distribution on the silicon wafer 1, a periodic distribution of the carrier density ρ can be formed on the silicon constituting the silicon wafer 1 as shown in FIG. It becomes possible to periodically change the real part n and the imaginary part α of the refractive index of silicon. That is, GC can be formed in the silicon waveguide 4.

FIG. 2 shows the result of calculating the effect of GC due to the refractive index change generated at a density of 10 ²⁰ cm ⁻¹ with a carrier of 10 ²⁰ cm ^{−1 with} a period of 630 nm by FDTD (Finite-difference time-domain method). In FIG. 2, a cross section of the silicon wafer 1 is shown, but the upper portion of the silicon waveguide 4 is an air layer 6. When light propagates from the left end of the silicon waveguide 4, if there is no GC, the light propagates in the right direction as it is.

On the other hand, in the present embodiment, light propagating through the silicon waveguide 4 is transmitted from the silicon waveguide 4 by periodically forming the GC by changing the real part n and the imaginary part α of the refractive index of silicon with light. Radiates and propagates to the upper air layer 6 and the lower silicon oxide film 3. The change in the refractive index of silicon in FIG. 2 is the change Δn = 10 ⁻¹ cm ⁻¹ in the real part n of the refractive index and the change Δα = 10 ³ cm ⁻¹ in the imaginary part α. As shown in FIG. 2, the silicon 12 of the silicon wafer 1 is periodically formed with a portion 12 having a high refractive index and a portion 13 having a low refractive index, thereby forming a light and dark refractive index. In the example of FIG. 2, 32 portions 12 each having a high refractive index and 32 portions 13 having a low refractive index, that is, 32 light and dark refractive indexes are formed.

  When the silicon waveguide 4 has a periodic refractive index change, the silicon waveguide 4 functions as a grating. Therefore, light propagating through the silicon waveguide 4 is radiated from the silicon waveguide 4 as in the conventional GC. The greater the number of periods of the refractive index (the number of light and darkness of the refractive index), the longer the region from which light is emitted, and the more light is emitted. In the example of FIG. 2, the amount of light radiated to the upper air layer 6 out of the light propagating through the silicon waveguide 4 is about 10%. The intensity of the emitted light can be calculated by FDTD.

  The principle of conventional GC is described in the literature “G. Roelkens, et al.,“ Grating-Based optical fiber interfaces for silicon-on-insulator photonic integrated circuits ”, IEEE journal of selected topics in quantum electronics, Vol. .3, p.571-580, 2011 ”.

  In the present embodiment, similarly to the conventional GC, the light emission angle changes depending on the pitch of the refractive index change and the effective refractive index (propagation mode). That is, the size of the light radiated in the vertical direction and the transmitted light varies with the refractive index change pitch, the refractive index distribution, and the effective refractive index (propagation mode) as parameters.

  Thus, in the present embodiment, as shown in FIG. 1C, the GC 7 can be formed on the silicon wafer 1 and the guided light 14 propagating through the silicon waveguide 4 can be emitted from the silicon waveguide 4. The radiated light 15 emitted to the upper part of the silicon wafer 1 can be received by providing a sensor such as a photodiode or an optical fiber on the upper part of the silicon wafer 1.

The radiation direction of the radiation 15 is determined by the shape of the GC 7 and the material of the wafer. When the grid-shaped GC 7 having a one-dimensional equidistant pitch is formed on the silicon wafer 1, the radiation direction of the radiation 15 is expressed by the following equation.
sinΘ = neff (λ) / n + (mλ) / (nΛ) (2)
In equation (2), Θ is the angle in the radial direction from the substrate vertical direction, neff (λ) is the effective refractive index, n is the refractive index of the silicon waveguide 4, λ is the wavelength of light, Λ is the pitch of GC7, m Is the order. Equation (2) is described in the document “David J. Lockwood,“ Silicon Photonics II ”, Springer, p. 73-76, 2010”.

  As described above, in the present embodiment, a GC can be temporarily formed on a silicon wafer on which an optical circuit is formed, and by stopping the irradiation of the light 10 and 11 when the GC becomes unnecessary, GC can be turned off. In the present embodiment, since it is not necessary to make GC in the optical circuit in advance, when the GC forming method of the present embodiment is applied to the inspection of the optical circuit, the inspection location is limited to the location in which GC is built. In this case, a GC can be freely formed at an arbitrary place for inspection.

  In the present embodiment, since the GC can be turned off when the GC is no longer needed, a steady light loss due to the GC does not occur. Further, when the GC forming method of the present embodiment is applied to the inspection of the optical circuit, the inspection of the optical circuit formed on the wafer can be performed in the state of the wafer without cutting it into chips, and at the wafer level. By performing the inspection, it is possible to reduce the cost because it is possible to sort the chips and eliminate unnecessary packaging and inspection.

  Note that although the light output is described in this embodiment mode, the present invention is not limited to this, and light input is also possible. That is, it is possible to couple the light to the silicon waveguide 4 by making the light incident on the GC 7 formed on the silicon wafer 1 in the direction opposite to the radiation direction of the radiation light 15.

  If two GCs are temporarily formed on the silicon wafer 1, the inspection light is incident on the silicon waveguide 4 from one GC, and the light is extracted from the other GC, so that the silicon between the two GCs is obtained. The optical characteristics of the waveguide 4 can be measured. Further, when a light receiving portion is formed in the silicon waveguide 4 on the silicon wafer 1, by temporarily forming one GC on the silicon wafer 1 and making light incident thereon, the light receiving portion receives the light. The optical characteristics of the silicon waveguide 4 between the GC and the light receiving unit can be measured. When a light source is formed in the silicon waveguide 4, one GC is temporarily formed on the silicon wafer 1, the light source light is extracted from the GC, and the light is detected to detect the light source and the GC. The optical characteristics of the silicon waveguide 4 between them can be measured.

Further, in the present embodiment uses silicon as the material of interest to form GC, and semiconductor, dielectric, photorefractive material is a _{Ga 1-y Al y As,} GaAs 1-x Sb x, In _x Ga _1-x As _y P _y , LiNbO ₃ , LiTaO ₃ , BaTiO ₃ , GaAs, ZnO, NH ₄ H ₂ PO ₄ , KH ₂ PO _4, etc., causing a refractive index change by interacting with light The present embodiment can be applied to a material that can be used.

[Second Embodiment]
Next, a second embodiment of the present invention will be described. FIG. 3 is a cross-sectional view for explaining the GC forming method according to the second embodiment of the present invention. In this embodiment, light irradiation is used as a physical stimulus for a silicon wafer, a periodic light intensity distribution is generated on the silicon wafer using a periodic structure such as a mask and a lens, and the interaction between the light and the waveguide material is used. A change in refractive index is caused to temporarily form a GC in the silicon waveguide, thereby enabling optical input / output to the silicon waveguide.

  Here, the light 24 emitted from the light source 20 is converted into parallel light 25 by the lens 21 and irradiated to the periodic structure 22 similar to the light intensity distribution to be generated. And the light 26 which permeate | transmitted the periodic structure 22 is condensed using the lens 23, and the condensed light 27 is irradiated to the silicon wafer 1. FIG. By irradiating the silicon wafer 1 with light transmitted through the periodic structure 22, light whose intensity periodically changes along the plane direction of the silicon wafer 1 (X direction in FIG. 3) is irradiated. By forming a periodic light intensity distribution on the silicon wafer 1, the refractive index of silicon periodically changes along the plane direction of the silicon wafer 1 as described in the first embodiment. Function as.

  Thus, in this embodiment, the same effect as that of the first embodiment can be obtained. In the present embodiment, similarly to the first embodiment, the light propagating through the silicon waveguide 4 can be emitted from the portion of the silicon waveguide 4 where the GC is formed, or the emitted light is emitted to the GC. It is also possible to input light into the silicon waveguide 4 by making light incident in the direction opposite to the radiation direction.

The period of the light intensity distribution on the silicon wafer 1 is determined by the size of the periodic structure 22 and the magnification of the lenses 21 and 23.
As the periodic structure 22, a mask or a diffraction grating may be used, and a spatial light modulator such as LCOS (Liquid Crystal On Silicon) or MEMS (Micro-Electro-Mechanical System) that can be actively controlled may be used. .

  The period of the periodic structure 22 may change the size and uniformity of the period according to the application. In particular, when a device capable of active control such as LCOS or MEMS is used as the periodic structure 22, the period of light intensity distribution and the uniformity of the period can be actively controlled. Further, as the periodic structure 22, an optical system that folds the optical path using a reflection type diffraction grating or a reflection mirror may be used.

[Third Embodiment]
Next, a third embodiment of the present invention will be described. FIG. 4 is a cross-sectional view illustrating a GC forming method according to the third embodiment of the present invention. This embodiment uses light irradiation as a physical stimulus for a silicon wafer, generates a periodic light intensity distribution on the silicon wafer using an array light source and a lens, and generates a refractive index by the interaction between the light and the waveguide material. By causing a change, a GC is temporarily formed in the silicon waveguide to enable optical input / output to the silicon waveguide.

  In the present embodiment, an array light source 30 such as a VCSEL (Vertical Cavity Surface Emitting Lasers) as shown in FIG. 4 is used instead of the periodic structure 22 of FIG. The individual light 33 emitted from the array light source 30 is collected by the array lens 31, the light 34 transmitted through the array lens 31 is further collected using the lens 32, and the collected light 35 is converted into the silicon wafer 1. Irradiate.

  By using the array light source 30, it is possible to periodically create an on / off state of light and to form a periodic light intensity distribution on the silicon wafer 1. As a result, as described in the first and second embodiments, the refractive index of silicon changes periodically, and GC is formed. Thus, in this embodiment, the same effect as that of the first embodiment can be obtained.

Note that the optical system is not limited to the configuration shown in FIG. 4, and an optical system that folds the optical path using a reflection mirror may be used.
Similar to the first embodiment, the second and third embodiments can be applied to a material that can interact with light to generate a refractive index change.

  In the first to third embodiments, light irradiation is used as a physical stimulus for the wafer, but the light irradiated to the wafer is changed by changing the wavelength band of the light to be guided to the wafer or the emitted light. And interference with guided light or emitted light can be avoided. As the guided light propagating through the waveguide, it is assumed that light of a wavelength band having a high material transmittance is used in order to reduce the loss, and as the light irradiated to the wafer, the transmittance is to be absorbed by the wafer. Since it is assumed that light of a low wavelength band is used, the light irradiated on the wafer and the guided light do not interfere with each other. Further, even if the light irradiating the wafer interferes with the guided light in an optical circuit that actively uses absorption, there is no problem because the light traveling direction is different.

[ First Reference Example ]
Next, a first reference example of the present invention will be described. FIG. 5 is a cross-sectional view for explaining the GC forming method according to the first reference example of the present invention. In this reference example , thermal stimulation is used as a physical stimulus for a silicon wafer, a periodic heat distribution is generated in the silicon wafer using a heat source array, a refractive index change is caused, and GC is temporarily applied to the silicon wafer. It is formed to enable optical input / output to the silicon waveguide.

The refractive index of silicon changes due to heat. The thermo-optic constant of silicon is 18 × 10 ⁻⁶ . As shown in FIG. 5, the temperature periodically changes along the plane direction of the silicon wafer 1 (X direction in FIG. 5) by pressing the probe having the heat source array 40 arranged at a period of 630 μm against the silicon wafer 1. A heat distribution can be generated. When a periodic heat distribution occurs in the silicon wafer 1, the refractive index of silicon periodically changes along the plane direction of the silicon wafer 1, and thus functions as a GC.

Thus, in this reference example , the same effects as those of the first embodiment can be obtained. In the present reference example , similarly to the first embodiment, the light propagating through the silicon waveguide 4 can be emitted from the portion where the GC of the silicon waveguide 4 is formed, and the light emitted from the GC can be emitted from the GC. Light can also be input to the silicon waveguide 4 by making light incident in the direction opposite to the radiation direction.

  As the heat source array 40, for example, a heated heat sink can be used (http://www.lex.co.jp/product/lerge.html). A periodic heat distribution can be generated in the silicon wafer 1 by pressing the tips of the plurality of fins 41 provided on the heat sink against the silicon wafer 1.

In addition, a Peltier element obtained by arraying units in which P-type semiconductors and N-type semiconductors are connected by metal plates can be used as the heat source array 40 (http://www.n-tecmo.co.jp/custama/ per_gen.htm).
In this reference example , silicon is used as a material for forming a GC. However, this reference example can be applied to a material that can generate a refractive index change by heat. Examples of such materials include LiNbO ₃ , TiO ₂ , PbMoO ₄ , soda glass, optical glass, PLZT, and photopolymer.

[ Second Reference Example ]
Next, a second reference example of the present invention will be described. In this reference example , sound wave irradiation is used as a physical stimulus for a silicon wafer, a periodic sound pressure distribution is generated on the silicon wafer using a SAW device array, a refractive index change is caused, and the silicon wafer is temporarily applied to the silicon wafer. A GC is formed to enable optical input and output to the silicon waveguide.

In silicon, the refractive index is changed by sound waves. Usually, the amount of change in the refractive index of silicon obtained by the acoustooptic effect is about 10 ⁻⁴ . By pressing the probe that has generated the sound pressure distribution on the end face by the SAW device array against the silicon wafer 1, it is possible to generate a sound pressure distribution whose intensity periodically changes along the plane direction of the silicon wafer 1. When a periodic sound pressure distribution is generated in the silicon wafer 1, the refractive index of silicon periodically changes along the planar direction of the silicon wafer 1, and thus functions as a GC.

Thus, in this reference example , the same effects as those of the first embodiment can be obtained. In the present reference example , similarly to the first embodiment, the light propagating through the silicon waveguide 4 can be emitted from the portion where the GC of the silicon waveguide 4 is formed, and the light emitted from the GC can be emitted from the GC. Light can also be input to the silicon waveguide 4 by making light incident in the direction opposite to the radiation direction.

As a probe used in this reference example , a plurality of SAW devices (http://www.murata.co.jp/kanazawamurata/products/device/saw.html) that generate surface acoustic waves are arranged in an array at the probe tip. Then, the portion where the surface acoustic wave of each SAW device is generated may be pressed against the silicon wafer 1.

In this reference example , silicon is used as a material for forming a GC. However, this reference example can be applied to a material that can generate a refractive index change by sound waves. Examples of such materials include acousto-optic materials such as SiO ₂ , AsS ₃ , AsSe ₃ , LiNbO ₃ , LiTaO ₃ , ZnO, ZnS, CdS, ZnTe, GaAs, GaP, TeO ₂ , and YIG.

[ Third Reference Example ]
Next, a third reference example of the present invention will be described. 6A and 6B are views for explaining a GC forming method according to a third reference example of the present invention. FIG. 6A is a bottom view of a probe used in this reference example . (B) is sectional drawing explaining the GC formation method of this reference example . Note that FIG. 6B corresponds to a cross-sectional view taken along the line BB ′ of FIG. 6A taken along the line BB ′. This reference example uses current application as a physical stimulus to a silicon wafer, generates a periodic current distribution in the silicon waveguide of the silicon wafer, causes a refractive index change, and temporarily forms a GC on the silicon wafer. In addition, light input / output to the silicon waveguide is enabled.

In silicon, the refractive index changes even when current is injected. Current injection generates carriers such as free electrons in the silicon, and the amount of change in the refractive index changes depending on the carrier density. For example, when 10 ²⁰ carriers are generated, the refractive index of silicon changes by about −10 ⁻¹ (references “RICHARD A. SOREF, AND BRIAN R. BENNETT,“ Electrooptical Effects in Silicon ”, IEEE Journal of Quantum Electronics, Vol.QE-23, No.1, p.123-129, 1987 ").

  As shown in FIG. 6 (A), the tip of the probe 50 arranged with the comb-shaped electrodes 51 and 52 facing each other is pressed against the silicon waveguide 4 of the silicon wafer 1a as shown in FIG. 6 (B). By passing a current between the electrode 51 and the electrode 52, a current whose intensity periodically changes along the plane direction of the silicon wafer 1a (the X direction in FIG. 6B) is supplied to the silicon waveguide 4. When a periodic current distribution is generated in the silicon waveguide 4, the refractive index of silicon periodically changes along the planar direction of the silicon wafer 1a, and thus functions as a GC.

Thus, in this reference example , the same effects as those of the first embodiment can be obtained. In the present reference example , similarly to the first embodiment, the light propagating through the silicon waveguide 4 can be emitted from the portion where the GC of the silicon waveguide 4 is formed, and the light emitted from the GC can be emitted from the GC. Light can also be input to the silicon waveguide 4 by making light incident in the direction opposite to the radiation direction.

In this reference example , silicon is used as a material for forming a GC. However, this reference example can be applied to a material that can generate a change in refractive index by an electric current. Such materials include semiconductors and dielectrics.

[ Fourth Reference Example ]
Next, a fourth reference example of the present invention will be described. FIG. 7A is a plan view showing the structure of a target wafer in this reference example , and FIG. 7B is a cross-sectional view taken along the line AA ′ of FIG. Further, FIG. 8 (A), and FIG. 8 (B) is a diagram for explaining a GC formation method of the present reference example, bottom view of the probe used in Figure 8 (A) is present embodiment, FIG. 8 (B) It is sectional drawing explaining the GC formation method of this reference example . 8B corresponds to a cross-sectional view taken along the line BB ′ of FIG. 7A and FIG. 8A cut along the line BB ′. This reference example uses electric field application as a physical stimulus for a silicon wafer, applies a voltage to a waveguide using an electro-optic crystal, causes a refractive index change, and temporarily forms a GC in the waveguide. This enables optical input / output to / from the waveguide.

Wafer 60 of this reference example, a LiNbO ₃ substrate 61, an LiNbO ₃ waveguide 62 formed in the LiNbO ₃ substrate 61, and a silicon oxide film 63 as a buffer layer. The LiNbO ₃ waveguide 62 can be formed in the LiNbO ₃ substrate 61 by Ti thermal diffusion or ion exchange.

When an electro-optic crystal such as LiNbO ₃ is used as a waveguide material, a refractive index change occurs due to the Pockels effect when an electric field is applied to the electro-optic crystal. As shown in FIG. 8A, the tip of the probe 64 in which the comb-shaped electrodes 65 and 66 are arranged to face each other is pressed against the wafer 60 as shown in FIG. By applying a voltage to, an electric field whose intensity periodically changes along the planar direction of the wafer 60 (X direction in FIG. 8B) is applied to the wafer 60. When a periodic electric field is applied to the wafer 60, the refractive index of the LiNbO ₃ waveguide 62 periodically changes along the planar direction of the wafer 60, so that it functions as a GC.

Thus, in this reference example , the same effects as those of the first embodiment can be obtained. In this reference example, similarly to the first embodiment, to light propagating LiNbO ₃ waveguide 62 can also be emitted from the point where GC of LiNbO ₃ waveguide 62 is formed, the radiation relative to GC Light can be input to the LiNbO ₃ waveguide 62 by making the light incident in the direction opposite to the light emission direction.

[ Fifth Reference Example ]
Next, a fifth reference example of the present invention will be described. FIG. 9A is a plan view showing the structure of a wafer as a target in this reference example , and FIG. 9B is a cross-sectional view taken along the line CC ′ of FIG. 9A. Further, FIG. 10 (A), the FIG. 10 (B) is a diagram for explaining a GC formation method of this reference example, FIG. 10 (A) is a bottom view of the probe used in this reference example, FIG. 10 (B) It is sectional drawing explaining the GC formation method of this reference example . Note that FIG. 10B corresponds to a cross-sectional view taken along the line DD ′ in FIG. 9A and FIG. 10A cut along the line DD ′. This reference example uses magnetic field application as a physical stimulus for a silicon wafer, applies a magnetic field to a waveguide using a magnetic material, causes a refractive index change, and temporarily forms a GC in the waveguide. This enables optical input / output to / from the waveguide.

The wafer 70 of this reference example includes a substrate 71 made of a non-magnetic material and a waveguide 72 made of magnetic garnet formed on the substrate 71. The waveguide 72 is a rib-type waveguide.

  When a magnetic material is used as the waveguide material, when a magnetic field is applied to the magnetic material, the refractive index changes due to the Faraday effect. As shown in FIG. 10A, by pressing the tip of the probe 73 in which the S-pole magnets 74 and the N-pole magnets 75 are alternately arranged on the wafer 70 as shown in FIG. 10B, A magnetic field whose intensity periodically changes along the plane direction of the wafer 70 (X direction in FIG. 10B) is applied to the wafer 70. When a periodic magnetic field is applied to the wafer 70, the refractive index of the waveguide 72 periodically changes along the planar direction of the wafer 70, so that it functions as a GC.

Thus, in this reference example , the same effects as those of the first embodiment can be obtained. In this reference example , similarly to the first embodiment, the light propagating in the waveguide 72 can be emitted from the portion of the waveguide 72 where the GC is formed, and the radiation direction of the emitted light with respect to the GC It is also possible to input light into the waveguide 72 by making light incident in the opposite direction.

  The present invention can be applied to a technique for temporarily forming a grating coupler in an optical circuit.

DESCRIPTION OF SYMBOLS 1,1a ... Silicon wafer, 2 ... Silicon substrate, 3, 5, 63 ... Silicon oxide film, 4 ... Silicon waveguide, 6 ... Air layer, 7 ... Grating coupler, 10, 11 ... Incident light, 14 ... Waveguide light, DESCRIPTION OF SYMBOLS 15 ... Synchrotron radiation, 20 ... Light source, 21, 23, 31, 32 ... Lens, 22 ... Periodic structure, 30 ... Array light source, 40 ... Heat source array, 41 ... Fin, 50, 64, 73 ... Probe, 51, 52 , 65, 66... Electrode, 60, 70... Wafer, 61... LiNbO ₃ substrate, 62... LiNbO ₃ waveguide, 71... Substrate, 72.

Claims (3)

Irradiating light onto a wafer on which a semiconductor optical waveguide is formed to generate a periodic light intensity distribution, and periodically changing the refractive index of the optical waveguide by generating carriers in the semiconductor in response to the light irradiation. And forming a grating coupler in the optical waveguide. In the method of forming a grating coupler according to claim 1 ,
A grating coupler forming method, wherein a periodic light intensity distribution is generated on the wafer by light interference. In the method of forming a grating coupler according to claim 1 ,
A method of forming a grating coupler, wherein a periodic light intensity distribution is generated on the wafer by irradiating the wafer with light whose intensity changes periodically.