JP6290406B2 - Reaction induction unit, substrate processing apparatus, and thin film deposition method - Google Patents

Description

The present invention relates to a substrate processing apparatus, and more particularly to a reaction induction unit that can easily control the temperature, pressure, and reaction time of a gas injected onto a substrate, and a substrate processing apparatus and a thin film deposition method having the reaction induction unit.

In order to improve the conformability of the deposited film quality during the deposition process for manufacturing a semiconductor device, a precursor and the temperature during the reaction deposition may be utilized by using reaction products of two or more gases in one system. Bad film quality due to narrow process window or small production of reaction products to meet reaction conditions where pressure, gas ratio (Gas Ratio), reaction time (Reaction Time) cannot be controlled or are not easy In addition, a loading effect that does not facilitate uniform supply due to recombination is generated.

Problems to be solved by the invention

An object of the present invention is to provide a reaction induction unit and a substrate processing apparatus having the same that can easily control the temperature, pressure, and reaction time during reaction deposition using a reaction product of two or more gases. Another object is to provide a thin film deposition method.
An object of the present invention is to provide a reaction induction unit capable of uniformly supplying reaction products by reacting two or more gases therein, a substrate processing apparatus having the reaction induction unit, and a thin film deposition method.
The problem to be solved by the present invention is not limited here, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, a process chamber, a substrate susceptor installed in the process chamber and having a plurality of substrates placed on the same plane and connected to a rotation shaft and rotated, and a bottom surface of the substrate susceptor And a reaction induction unit that injects a gas to the processing surface of the substrate at a position corresponding to each of the plurality of substrates placed on the substrate susceptor, and the reaction induction unit includes at least 3 An object of the present invention is to provide a substrate processing apparatus having a multilayer composite structure flow path by using a plate in which two or more are laminated.

A top plate having at least one gas injection port; a primary plate for gas mixing and heating; and a primary channel for stacking under the top plate. A middle plate having a first through hole through which gas passes through, and a stack placed under the middle plate for controlling the pressure and reaction time of the gas introduced through the first through hole A bottom plate having a secondary flow path.

In addition, at least one of the middle plates may be installed.
The reaction induction unit may further include an injection nozzle that is installed on the bottom plate and is connected to the secondary flow path and injects a gas that has passed through the secondary flow path onto the substrate.

In addition, the spray nozzle is detachably installed in a slot formed in the center of the bottom plate, and has a plurality of spray holes on the bottom surface and a groove connected to the end of the secondary flow path on the side surface.
The middle plate may be formed such that the primary flow path is directed from the center of the middle plate toward the edge, and the first through hole may be formed at the end of the primary flow path.

The bottom plate may be formed such that the secondary channel faces the center from the edge of the bottom plate.
The secondary flow path may have one end connected to the first through hole and the other end connected to the injection nozzle.

In addition, the secondary flow path has independent paths having different lengths and numbers of turns.
In addition, the middle plate may have a central plaza portion in which the primary flow path is connected to the center and gas flows through the gas injection port.
The primary channel may be formed by a partition wall, and the secondary channel may be formed in a groove shape.

The secondary flow path is longer than the primary flow path.
According to one aspect of the present invention, a top plate having at least one gas injection port, and a primary flow path for gas mixing and heating, which is installed under the top plate. And a middle plate having a first through hole through which the gas passing through the primary flow path escapes, and a pressure of the gas introduced through the first through hole, installed to be stacked under the middle plate And at least one bottom plate having a secondary flow path for controlling the reaction time, and a gas that is installed on the bottom plate and connected to the secondary flow path via the secondary flow path on the substrate. A reaction induction unit including an injection nozzle for injecting can be provided.

The spray nozzle is detachably installed in a slot formed in the center of the bottom plate, and has a plurality of spray holes on the bottom surface and a groove connected to the end of the secondary flow path on the side surface.
Further, the middle plate is formed such that the primary flow path faces from the center of the middle plate to the edge, the first through hole is formed at the end of the primary flow path, and the bottom plate is The secondary channel may be formed to face the center from the edge of the bottom plate.

In addition, the middle plate has a central plaza portion in which the primary flow path is connected to the center, and gas flows through the gas injection port.
The primary channel may be formed by a partition wall, and the secondary channel may be formed in a groove shape.

A thin film deposition method according to an embodiment of the present invention includes forming a first precursor on a first substrate, fuzzing and pumping a portion of the second precursor on the second substrate, and a third precursor on the third substrate. Providing a third radical on the body to form a third thin film, fuzzing and pumping the fourth radical remaining on the fourth thin film of the fourth substrate, and the first substrate of the first substrate. A part of the precursor is fuzzy and pumped, a second radical is provided on the second precursor of the second substrate to form a second thin film, and the third radical remaining on the third substrate is fuzzy. A second step of pumping to form a fourth precursor on the fourth radical of the fourth substrate; and providing a first radical on the first precursor of the first substrate to form a first thin film. Forming and leaving the second radical remaining on the second substrate as fuzzy and pumpin A third step of forming the third precursor on the third substrate, fuzzing and pumping a part of the fourth precursor on the fourth substrate, and the first remaining on the first substrate. Fuzzing and pumping one radical to form the second precursor on the second substrate; fuzzing and pumping a portion of the third precursor on the third substrate; and Providing a fourth radical on a fourth precursor to form a fourth thin film.

According to an exemplary embodiment of the present invention, the first through fourth steps may be performed at 500 degrees Celsius.
The first to fourth precursors may include silane, and the first to fourth radicals may include a hydroxyl group.
According to another embodiment of the present invention, there is provided a method for forming a thin film by forming a first precursor on a first substrate in a substrate and a second radical on a second precursor of a second substrate at the same time. A first step of forming a second thin film thereon, and a first radical on the first precursor in the substrate and a second precursor on the second thin film are simultaneously formed on the first substrate; And a second step of forming a first thin film.

In accordance with embodiments of the present invention, pressure, reaction time, and temperature conditions suitable for two or more gas reactions are provided to induce the reaction to ensure a wide process window and minimize recombination of reaction products. Therefore, the thin film quality and the loading effect can be improved.
As described above, the thin film deposition method according to the embodiment of the present invention can form the first to fourth thin films on the first to fourth substrates that are rotated in the chamber at a constant temperature of 520 ° C. It can prevent effects and improve productivity.

1 is a view for explaining a substrate processing apparatus according to the present invention. FIG. 2 is a perspective view of the substrate susceptor illustrated in FIG. 1. FIG. 2 is a rear view of the reaction induction unit illustrated in FIG. 1. It is a perspective view of a reaction induction unit. It is a disassembled perspective view of a reaction induction unit. It is sectional drawing of a reaction induction unit. It is a top view which shows the injection nozzle installed in the bottom plate. It is drawing which shows the plate in which the refrigerant | coolant flow path was formed. It is a flowchart which shows the thin film vapor deposition method in the substrate processing apparatus of FIG. It is a top view which shows the process chamber of FIG. FIG. 4 is a perspective view showing the susceptor and first to fourth stages of FIG. 1. It is the graph which compared and showed formation of the silicon oxide film of the 1st thru / or the 4th thin film, and the conventional silicon oxide film. 6 is a graph showing a comparison between a wet etching rate of first to fourth silicon oxide films and a wet etching rate of a general silicon oxide film.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The problems, problem solving means, and effects to be solved by the present invention described above can be easily understood through embodiments associated with the accompanying drawings. Each drawing is partially simplified or exaggerated for clear description. In adding a reference number to a component in each drawing, it is significant that the same component is shown to have the same symbol as much as possible even if it is displayed on another drawing. There must be. Further, in the description of the present invention, when it is determined that a specific description of a related known configuration or function may obscure the gist of the present invention, a detailed description thereof will be omitted. .
(Embodiment)

FIG. 1 is a view for explaining a substrate processing apparatus according to the present invention. FIG. 2 is a perspective view of the substrate susceptor shown in FIG.
Referring to FIG. 1, a substrate processing apparatus 10 according to an embodiment of the present invention includes a process chamber 100, a substrate susceptor 200 as a support member, a reaction induction unit 300, and a supply member 400. Including.
The process chamber 100 has an inlet / outlet 112 formed on one side. The entrance / exit 112 allows the substrate W to enter and exit as the process proceeds. Although not shown, the process chamber 100 is formed with an exhaust duct at the edge for exhausting the reaction gas supplied to the process chamber and the reaction dispersion generated during the deposition process. As an example, the exhaust duct is a ring type located outside the substrate susceptor 200.

Referring to FIGS. 1 and 2, the substrate susceptor 200 is installed in the internal space of the process chamber 100. As an example, the substrate susceptor 200 is an arrangement type in which four substrates are placed. The substrate susceptor has a disk shape in which first to fourth stages 212a to 212d on which a substrate is placed are formed. The first to fourth stages 212a to 212d provided in the substrate susceptor have a circular shape similar to the shape of the substrate. The first to fourth stages 212a to 212d are arranged at 90 ° intervals on concentric circles around the center of the substrate susceptor 200. As an example, the number of stages in the substrate susceptor 200 may be three, or four or more, instead of four.

The substrate susceptor 200 is rotated by a driving unit 290 connected to the rotation shaft 280. The driving unit 290 that rotates the substrate susceptor 200 preferably uses a stepping motor in which an encoder capable of controlling the rotational speed and rotational speed of the driving motor is installed.
Although not shown, the substrate susceptor 200 includes a plurality of lift pins (not shown) for moving the substrate W up and down at each stage. The lift pins raise or lower the substrate W to separate the substrate W from the stage of the substrate susceptor 200 or to rest on the stage.

Referring to FIG. 1, the supply member 400 includes a first gas supply member 410a and a second supply member 410b. The first gas supply member 410a supplies a first reaction gas for forming a predetermined thin film on the substrate W to each of the four reaction induction units, and the second gas supply member 410b supplies 4 second reaction gases. Supply to each of the two reaction induction units. In this embodiment, two gas supply members are used to supply two different reaction gases. However, two or more different gases or the same gas can be supplied depending on the characteristics of the supplied gas. Of course, a plurality of gas supply members can be applied.
FIG. 3 is a rear view of the reaction induction unit illustrated in FIG. 1.

As shown in FIGS. 1 to 3, the four reaction induction units 300 inject gas into each of the four substrates placed on the substrate susceptor 200. The reaction induction unit 300 is supplied with at least one reaction gas from a supply member. The reaction gas may be supplied to the reaction induction unit 300 after being preheated outside. According to an example, each of the reaction induction units 300 is supplied with the first and second reaction gases from the supply member 400. The four reaction induction units 300 have a disk shape as a whole. Each of the four reaction induction units 300 has a fan-shaped pattern partitioned at 90 ° intervals, and gas injection ports 312 are formed on the bottom surface.

For example, the reaction induction unit 300 has a fan shape with intervals of 90 °, but the present invention is not limited to this, and is configured with intervals of 45 ° or 180 ° depending on the purpose and characteristics of the process. The reaction induction unit size, configuration, and installation position can be configured differently according to the configuration of the reaction chamber.
4 and 5 are a perspective view and an exploded perspective view of the reaction induction unit, FIG. 6 is a cross-sectional view of the reaction induction unit, and FIG. 7 is a plan view showing an injection nozzle installed on the bottom plate. is there.
As shown in FIGS. 4 to 7, the reaction induction unit 300 forms a multi-layer composite structure channel by a plate in which at least three or more are laminated. In the present embodiment, a multilayer composite structure in which three plates are stacked will be described as an example. However, this is only an example, and the number of plates may be two or four or more.

The reaction induction unit 300 includes a top plate 310, a middle plate 320, a bottom plate 330, and an injection nozzle 350. The top plate 310, the middle plate 320, and the bottom plate 330 are installed so as to be sequentially stacked. .

The top plate 310 has three injection ports 312 and 314. The two injection ports 312 are gas injection ports for reaction gas injection, and the other one injection port 314 is a pressure port for checking the pressure inside the reaction induction unit 300.
The middle plate 320 is installed so as to be stacked under the top plate 310. The middle plate 320 is mixed while passing through the primary flow path 322 and the primary flow path 322 for gas mixing and heating, so that the heated gas flows into the secondary flow path 332 of the bottom plate 330. The first through hole 324 is formed.

The primary flow path includes four flow paths from the central square portion 328 of the middle plate toward the edge, and the first through hole 324 is formed at the end of each flow path. The primary flow path is formed by a partition wall 326. The central square portion 328 is connected to the four primary flow paths in a space that is located at the center of the middle plate and into which gas flows through the gas injection port of the top plate.

In the present embodiment, it is illustrated and described that one middle plate 320 is installed between the top plate 310 and the bottom plate 330, but this is only an example, and the number of supplied gases Depending on the characteristics, it can be installed so that one or more of the other, the shape of the flow path, the length of the gas mixing, and the temperature control are stacked, different gases on the stacked plate and the same Gas is supplied.
The bottom plate 330 is installed so as to be stacked under the middle plate 320. The bottom plate 330 has four secondary flow paths 332 for controlling the pressure and reaction time of the gas flowing in through the four first through holes 324. The gas provided from the middle plate 320 is adjusted in pressure and reaction time while passing through the four secondary flow paths 332. For example, when the gas pressure is formed low, the gas pressure in the secondary flow path can be increased through volume reduction of the secondary flow path, increase in the number of turns, increase in length, shape change, and the like. On the other hand, when the gas pressure is formed high, the gas pressure in the secondary channel can be lowered through volume expansion, turn number reduction, length reduction, shape change, etc. of the secondary channel. . In this way, the reaction gas in which the reaction time and pressure are satisfied in the secondary flow path is provided to the injection nozzle.

The secondary flow path 332 is formed so as to face the center from the edge of the bottom plate 330. One end of the secondary flow path 332 is connected to the through hole 324 of the middle plate 320, and the other end is connected to the injection nozzle 350 installed at the center of the bottom plate 330.
The secondary flow path 332 is formed in the shape of a groove. The secondary flow path 332 is characterized in that its length is longer than the length of the primary flow path 322. The secondary flow path 332 is formed in an independent path shape having a different length and a different number of turns.

The injection nozzle 350 is installed on the bottom plate 330. The injection nozzle 350 is connected to the four secondary flow paths 332 and jets the gas that has passed through the secondary flow paths 332 onto the substrate. The spray nozzle 350 is detachably installed in a slot 338 formed at the center of the bottom plate 330. The injection nozzle 350 has a plurality of injection holes 352 on the bottom surface and grooves 354 connected to the terminal ends 335 of the secondary flow paths 332 on both side surfaces.

In the reaction induction unit 300, the reaction gas is preheated by heat conduction inside the chamber in the course of passing through the primary flow path or the secondary flow path.
FIG. 8 is a view showing a plate in which a refrigerant channel is formed.
As shown in FIG. 8, according to the present embodiment, the refrigerant flow path 384 is formed on the plate 380 constituting the reaction induction unit so as to be adjacent to the flow path 382 through which the reaction gas flows. In the refrigerant flow path 384, the refrigerant provided from the external refrigerant supply device 900 circulates so that the gas flowing through the flow path can be cooled. The refrigerant flow path 384 is formed on the middle plate 320 or the bottom plate 330 of the reaction induction unit 300 illustrated in FIG.
FIG. 9 is a flowchart showing a thin film deposition method in the substrate processing apparatus of FIG. FIG. 10 is a plan view showing the process chamber 100 of FIG. FIG. 11 is a perspective view showing the susceptor and the first to fourth stages of FIG.

Referring to FIGS. 1 and 9 to 11, a first precursor is formed on the first substrate 101, a part of the second precursor on the second substrate 102 is pumped and fuzzed, and a third substrate is formed. Third radicals are formed on the third precursor on 103, and the fourth radicals remaining on the fourth substrate 104 are pumped and fuzzed (S10).

The substrate processing apparatus 10 includes a process chamber 100, a substrate susceptor 200, a reaction induction unit 300, and a supply member 400. The process chamber 100 includes first to fourth regions 110-140. According to an example, the first to fourth regions 110 to 140 may be a precursor forming region, a precursor pumping region, a radical forming region, and a radical pumping region. For example, the process chamber 100 performs an atomic layer deposition process of the first to fourth substrates 101-104 at a temperature of 520.degree. The substrate susceptor 200 is disposed in the process chamber 100. The supply member 400 forms a precursor and a radical in the process chamber 100, respectively. The supply member 400 includes a precursor supply line 410a and a radical supply line 410b. The precursor supply line 410 a is connected to the first region 110. The radical supply line 410 b is connected to the third region 130. According to an example, the reaction induction unit 300 is disposed in the first region 110 and the third region 130. In the first region 110, first to fourth precursors are formed on the first to fourth substrates 101-104. In the third region 130, first to fourth radicals are formed on the first to fourth substrates 101-104. First to fourth thin films are formed on the first to fourth substrates 101-104 by the reaction between the first to fourth precursors and the first to fourth radicals. The reaction induction unit 300 includes a shower head.

The substrate susceptor 200 rotates in the process chamber 100. The substrate susceptor 200 includes a shaft 280 and first to fourth stages 212a to 212d on the shaft 280. The first to fourth stages 212a to 212d support the first to fourth substrates 101 to 104, respectively. The first through fourth stages 212a-212d are moved along the first through fourth regions 110-140. For example, the first to fourth substrates 101-104 are disposed in each of the first to fourth regions 110-140.

A first precursor is formed on the first substrate 101 in the first region 110. The first precursor is formed on the entire surface of the first substrate 101. The second precursor on the second substrate 101 in the second region 120 is pumped at a predetermined vacuum pressure. Further, fuzzy gas is supplied onto the second substrate 102. A third radical is provided on the third precursor of the third substrate 103 in the third region 130. Here, the first to third precursors include silane (SiH4) or titanium chloride (TiCl4) as the same kind of precursor formed on the first to third substrates 101-103. The third radical includes a hydroxyl group (OH) or an amine group (NH). The third precursor and the third radical can be reacted. For example, a third thin film of a silicon oxide film, a silicon nitride film, or titanium nitride (TiN) is formed on the third substrate 103, and a gas is formed after the reaction with hydrochloric acid (HCl).

After reacting with the fourth radicals remaining on the fourth substrate 104 in the fourth region 140, the gas is pumped. Fuzzy gas is supplied onto the fourth substrate 104. Before that, a fourth thin film is formed on the fourth substrate 104 by providing a fourth precursor and a fourth radical (not shown). The fourth radical is the same.

Then, the first stage 212a moves to the second region 120 by the rotation of the shaft 280, the second stage 212b moves to the third region 130, the third stage 212c moves to the fourth region 140, The four stages 212d can move to the first region 110. The first to fourth substrates 101-104 are sequentially moved through the first to fourth regions 110-140. As a result, the process waiting time of the first to fourth substrates 101-104 can be minimized. The loading effect of the first to fourth substrates 101 is removed or prevented. Therefore, the method for forming a thin film according to the embodiment of the present invention can improve productivity.

Next, a portion of the first precursor on the first substrate 101 is pumped and fuzzed to form second radicals on the second precursor on the second substrate 102, and on the third substrate 103. The remaining third radicals are pumped and fuzzed to form a fourth precursor on the fourth substrate 104 (S20). The first precursor is adsorbed on the surface of the first substrate 101. The first precursor that is not adsorbed on the surface of the first substrate 101 is exhausted by pumping or fuzzed by fuzzy gas. A second thin film is formed on the second substrate 102 by the reaction of the second precursor and the second radical. The second thin film includes a silicon oxide film, a silicon nitride film, or titanium nitride. Third radicals on the third substrate 103 are exhausted in the process chamber 100 by pumping or fuzzing. The fourth precursor is the same as the first to third precursors.

Thereafter, the first stage 212a moves to the third area 130, the second stage 212b moves to the fourth area 140, the third stage 212c moves to the first area 110, and the fourth stage 212d It is possible to move to the second area 120.

Then, a first radical is formed on the first precursor of the first substrate 101, the second radical remaining on the second substrate 102 is pumped and fuzzed, and the first radical is formed on the third radical of the third substrate 103. Three precursors are formed, and a part of the fourth precursor on the fourth substrate 104 is pumped (S30). A first thin film is formed on the first substrate 101 by a reaction between the first precursor and the first radical. The first thin film includes a silicon oxide film, a silicon nitride film, or titanium nitride. The second radical on the second substrate 102 is exhausted to the outside of the process chamber 100 by pumping or fuzzy. The third precursor is adsorbed on the third substrate 103. The fourth precursor that is not adsorbed on the surface of the fourth substrate 104 is removed by pumping or fuzzing.

Thereafter, the first stage 212a moves to the third area 130, the second stage 212b moves to the fourth area 140, the third stage 212c moves to the first area 110, and the fourth stage 212d The second region 120 can be moved.

Pumping and fuzzing the first radicals on the first substrate 101 to form a second precursor on the second radicals on the second substrate 102 and a portion of the third precursor on the third substrate 103 Are pumped and fuzzed to form fourth radicals on the fourth precursor on the fourth substrate 104 (S40). The first radicals remaining on the first substrate 101 are removed in the process chamber 100 by pumping or fuzzing. The second precursor is adsorbed on the second thin film or the second substrate 102. The third precursor not adsorbed on the second thin film or the third substrate 103 is removed in the process chamber 100 by pumping or fuzzing. The third precursor adsorbed on the second thin film or the third substrate 103 remains on the third substrate 103. The fourth precursor and the fourth radical form a fourth thin film on the fourth substrate 104.

The first to fourth substrates 101-104 are sequentially moved along the first to fourth regions 110-140, and the first to fourth substrates 101-104 having a predetermined thickness are formed on the first to fourth substrates 101-104. Through the fourth thin film is formed.
FIG. 12 is a graph comparing the formation of first to fourth thin film silicon oxide films and a conventional silicon oxide film. The horizontal axis represents temperature, and the vertical axis represents the formation ratio of the silicon oxide film.
Referring to FIG. 12, the first to fourth thin silicon oxide films 10 are formed at 520.degree. On the other hand, the conventional silicon oxide film 20 is formed at 570 ° C.
FIG. 13 is a graph showing a comparison between the wet etching rate of the first to fourth thin silicon oxide films 10 and the wet etching rate of a general silicon oxide film.
Referring to FIG. 13, the wet etching rate of the first to fourth thin silicon oxide films is lower than the wet etching rate of a general silicon oxide film. The difference in wet etching rate is caused by the density of the silicon oxide film. A general silicon oxide film having a low density has a higher wet etching rate than the silicon oxide films of the first to fourth silicon oxide films having a high density. Therefore, the thin film deposition method according to the embodiment of the present invention is a method of forming a high-density silicon oxide film.

The above description is merely illustrative of the technical idea of the present invention, and so long as the person has ordinary knowledge in the technical field to which the present invention belongs, the scope does not depart from the essential characteristics of the present invention. Various modifications and variations are possible. Therefore, the embodiment disclosed in the present invention is not intended to limit the technical idea of the present invention but merely to explain, and the scope of the technical idea of the present invention is not limited by such an embodiment. The scope of protection of the present invention should be construed by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

Claims (13)

In substrate processing equipment,
A process chamber;
A substrate susceptor installed in the process chamber and having a plurality of substrates placed on the same plane and connected to a rotating shaft and rotated;
A heater member positioned on a bottom surface of the substrate susceptor;
A plurality of substrates placed on the substrate susceptor, and a reaction induction unit that injects gas onto the processing surface of the substrate at a position corresponding to each of the substrates,
The reaction induction unit includes:
Having a multi-layer composite structure flow path by a plate in which at least three or more are laminated,
The reaction induction unit includes:
A top plate having at least one or more gas injection ports;
A middle plate having a primary flow path for gas mixing and heating, and a first through hole through which the gas passes through the primary flow path is disposed so as to be laminated below the top plate; ,
A bottom plate installed to be stacked under the middle plate and having a secondary flow path for controlling the pressure and reaction time of the gas flowing in through the first through hole,
The reaction induction unit includes:
An injection nozzle that is installed on the bottom plate and is connected to the secondary channel and injects a gas passing through the secondary channel onto the substrate;
The spray nozzle is
It is installed in a slot formed in the center of the bottom plate so as to be removable.
A substrate processing apparatus, comprising: a plurality of injection holes on a bottom surface; and a groove connected to an end of the secondary flow path on a side surface.   The substrate processing apparatus according to claim 1, wherein at least one of the middle plates is installed. The middle plate is
The primary flow path is formed to face the edge from the center of the middle plate,
The substrate processing apparatus according to claim 1, wherein the first through hole is formed at a terminal end of the primary flow path. The bottom plate is
The substrate processing apparatus according to claim 1, wherein the secondary flow path is formed so as to face a center from an edge of the bottom plate.   The substrate processing apparatus according to claim 1, wherein the secondary flow path has one end connected to the first through hole and the other end connected to the spray nozzle. The substrate processing apparatus according to claim 1, wherein the secondary flow path has independent paths having different lengths and turn numbers. The middle plate is
The substrate processing apparatus according to claim 1, further comprising: a central plaza portion connected to the primary flow path at a center and into which gas flows through the gas injection port.   The substrate processing apparatus according to claim 1, wherein the primary flow path is formed by a partition wall.   The substrate processing apparatus according to claim 1, wherein the secondary flow path is formed in a groove shape.   The substrate processing apparatus according to claim 1, wherein the secondary flow path is longer than the primary flow path. In the reaction induction unit,
A top plate having at least one or more gas injection ports;
A middle plate having a primary flow path for gas mixing and heating, and a first through hole through which the gas passes through the primary flow path is disposed so as to be laminated below the top plate; ,
At least one bottom plate installed to be stacked under the middle plate and having a secondary flow path for controlling the pressure and reaction time of the gas introduced through the first through hole;
An injection nozzle that is installed on the bottom plate and is connected to the secondary flow path and injects a gas that has passed through the secondary flow path onto the substrate;
The spray nozzle is
It is installed in a slot formed in the center of the bottom plate so as to be removable.
A reaction induction unit comprising a plurality of injection holes on a bottom surface and a groove connected to an end of the secondary flow channel on a side surface. The middle plate is
The primary flow path is formed to face the edge from the center of the middle plate,
The first through hole is formed at the end of the primary flow path,
The bottom plate is
The reaction induction unit according to claim 11, wherein the secondary flow path is formed so as to face the center from the edge of the bottom plate. The middle plate is
The primary flow path is connected to the center, and has a central plaza portion into which gas flows through the gas injection port,
The primary flow path is formed by a partition wall,
The reaction induction unit according to claim 11, wherein the secondary flow path is formed in a groove shape.

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