JP6243602B2 - Magnetic field direction measuring device and rotation angle measuring device - Google Patents

Description

The present invention relates to a magnetic field direction measuring device and a rotation angle measuring device that include a plurality of magnetoelectric transducers that detect magnetic components and measure the direction of a magnetic field.

Magnetic field direction measuring devices that measure the direction of a magnetic field are used throughout daily life.
For example, a steering (steering device) is provided in the vehicle as a device for changing the direction of the vehicle while the passenger car is traveling. In order to control the rotation of the steering and the tire at this time, a rotation angle measuring device that measures the rotation angle is used. The rotation angle measurement device measures an angle at which an object rotates, and includes at least two magnetoelectric conversion elements.

Further, an azimuth measuring device that detects geomagnetism and measures an azimuth angle is mounted on a car navigation system or a mobile phone. The azimuth measuring device detects the direction of geomagnetism, and includes at least two magnetoelectric transducers.

Both the rotation angle measurement device and the azimuth angle measurement device are a kind of magnetic field direction measurement device. The rotation angle measurement device uses the detected magnetic field direction as the rotation angle, and the azimuth measurement device uses the detected magnetic field direction as the azimuth angle. Convert and output.

  As a conventional method for measuring the direction of the magnetic field, there is a method of detecting a magnetic field horizontal to the surface of the sensor chip using a Hall element that is a magnetoelectric conversion element and a magnetic focusing plate.

FIG. 1 is a diagram for explaining a conventional rotation angle measuring chip 51. At the center of the surface of the rectangular rotation angle measuring chip 51, a circular magnetic converging plate 7 of, for example, a soft magnetic thin film is provided. On the surface of the rotation angle measurement chip 51, a circle center point 9 that is an intersection of the rotation angle measurement chip 51 and the rotation axis of the magnetic flux concentrating plate 7 is provided. On the circumference of a circle whose center is the circle center point 9 and whose radius is the same length as the radius of the magnetic converging plate 7, X-axis Hall elements 53a, 53b and Y
The axial hall elements 55a and 55b are respectively installed at positions symmetrical with respect to the circle center point 9.

That is, two line segments that connect the X-axis Hall elements 53 and the Y-axis Hall elements 55 are parallel to the short direction and the long direction of the rotation angle measuring chip 51, respectively, and these two lines. Minutes meet at the center point 9 of the circle. Further, from the circle center point 9, the X-axis Hall element 53a
Is equal to the distance from the circle center point 9 to the X-axis Hall element 53b, the distance from the circle center point 9 to the Y-axis Hall element 55a, and the distance from the circle center point 9 to the Y-axis Hall element 55b. Are equal. Here, the direction of the X-axis Hall element 53b to 53a and the Y-axis Hall element 5
The directions from 5b to 55a are the positive direction of the X axis and the positive direction of the Y axis, respectively.

In FIG. 1, when a magnetic field 57 is applied to the rotation angle measurement chip 51, each Hall element 5.
Output differential voltages V (X +), V (X−), V (Y +) from 3a, 53b, 55a, 55b
, V (Y−) are a sine wave voltage and a cosine wave voltage according to the following equation (1).
V (X +) = A1 × cos θ
V (X −) = − A2 × cos θ
V (Y +) = A3 × sinθ
V (Y −) = − A4 × sinθ (1)

Here, A1, A2, A3, and A4 are proportional constants, and θ is an angle (magnetic field application angle) between the X-axis direction and the magnetic field 57 in FIG. These output voltages are expressed by the following equation (2)
By taking the difference as described above, the output voltages Vx and Vy in the X-axis direction and the Y-axis direction are derived.
Vx = V (X +) − V (X −) = (A1 + A2) × cos θ
Vy = V (Y +) − V (Y −) = (A3 + A4) × sin θ (2)
The rotation angle is calculated using these output voltages Vx and Vy.

Specifically, it is assumed that the output characteristics of the Hall elements 53a, 53b, 55a, and 55b are uniform, that is, A1 = A2 = A3 = A4, and the rotation angle is calculated from the following equation (3). It can be calculated.
Vy / Vx = {(A3 + A4) × sinθ} / {(A1 + A2) × cosθ}
= {(A3 + A4) / (A1 + A2)} × tan θ
Here, if A1 = A2 = A3 = A4,
θ = arctan (Vy / Vx) (3)

By the way, in the conventional measurement method, it is necessary to perform predetermined digital processing for each output signal of one Hall element, and finally to perform arithmetic processing for obtaining angle information, etc., so that the circuit scale is increased. In addition, an increase in production cost is inevitable, and there is a problem that it is difficult to simplify the circuit configuration and reduce the size of the entire apparatus. A technique that solves this problem and enables accurate angle measurement despite a simple circuit configuration is proposed in Patent Document 1.

International Publication No. 07/116823 Pamphlet

However, since the thermal expansion coefficients of the package material and the chip are different, the stress in the longitudinal direction and the short direction of the chip are different. Therefore, in the arrangement of the Hall elements installed on the X axis and the Y axis, with one of the longitudinal direction and the short direction of the conventional chip as the X axis direction and the other as the Y axis direction, The stress applied to the Y-axis hall element is different. Due to the effect of this stress,
A1 = A2 = A3 = A4 is not satisfied, and the values of A1, A2, A3, and A4 vary.
Therefore, the rotation angle θ calculated on the assumption that A1 = A2 = A3 = A4 actually has an error, and there is a problem that the detection accuracy of the rotation angle is lowered.

An object of the present invention is to provide a magnetic field direction measuring device and a rotation angle measuring device that can detect the direction of a magnetic field with high accuracy by making the stress applied to each magnetoelectric transducer as uniform as possible.

In order to achieve such an object, a magnetic field direction measuring device of the present invention is arranged on a substantially rectangular substrate and a substantially circumference having a predetermined point on the substrate surface as a circle center point, and has a first direction. Each including at least one first magnetoelectric conversion element that detects a magnetic component in the second direction and a second magnetoelectric conversion element that detects a magnetic component in a second direction different from the first direction, A magnetic field direction measuring device that measures the direction of a magnetic field based on output signal strengths of the magnetoelectric conversion element and the second magnetoelectric conversion element, wherein the first magnetoelectric conversion element and the second magnetoelectric conversion element are the length of the substrate. It is characterized by being arranged at a line-symmetrical position with a straight line on the substrate surface parallel to the direction or the short direction of the substrate as the axis of symmetry.

According to this configuration, since the stress applied to the first magnetoelectric conversion element and the second magnetoelectric conversion element can be made substantially equal, the output signal intensity of the first magnetoelectric conversion element and the second magnetoelectric conversion element It is possible to equalize the coefficients. Thereby, the magnetic field direction can be measured with high accuracy.

Furthermore, in the magnetic field direction measuring apparatus of the present invention, the first magnetoelectric conversion element and the second magnetoelectric conversion element are symmetrical about a straight line parallel to the longitudinal direction of the substrate or the short side direction of the substrate and passing through the center of the substrate surface. You may arrange | position in the line symmetrical position.

According to this configuration, the stress applied to the first magnetoelectric conversion element and the second magnetoelectric conversion element at the line-symmetrical position can be made more uniform, so that the magnetic field direction can be measured with higher accuracy. it can.

As another form, the rotation angle measuring device of the present invention includes a substantially rectangular substrate, a magnetic pole rotating body that has a rotation axis perpendicular to the surface of the substrate and generates a magnetic pole, a surface of the substrate, and A first that detects a magnetic component in a first direction and is disposed on a substantially circumference with the position of the intersection of the surface of the substrate and the rotation axis as the center of the circle.
And a second component that detects a magnetic component in a second direction different from the first direction.
A rotation angle measuring device for calculating a rotation angle of a magnetic pole rotating body based on output signal strengths of a first magnetoelectric conversion element and a second magnetoelectric conversion element. The first magnetoelectric conversion element and the second magnetoelectric conversion element are arranged in a line-symmetrical position with a straight line on the substrate surface parallel to the longitudinal direction of the substrate or the short-side direction of the substrate as an axis of symmetry. And

According to this configuration, since the stress applied to the first magnetoelectric conversion element and the second magnetoelectric conversion element can be made substantially equal, the output signal intensity of the first magnetoelectric conversion element and the second magnetoelectric conversion element This makes it possible to make the coefficients of the same, thereby making it possible to measure the rotation angle with high accuracy.

Furthermore, in the rotation angle measuring device of the present invention, the first magnetoelectric conversion element and the second magnetoelectric conversion element are:
You may arrange | position in the line-symmetrical position which made the straight line parallel to the longitudinal direction of a board | substrate or the transversal direction of a board | substrate, and passing through the center of a board | substrate surface a symmetry axis.

According to this configuration, the stress applied to the first magnetoelectric conversion element and the second magnetoelectric conversion element at the line-symmetric position can be made more uniform, so that the rotation angle can be measured with higher accuracy. it can.

As described above, according to the present invention, since the stress applied to each magnetoelectric transducer can be made substantially equal, the direction of the magnetic field can be measured with high accuracy.

It is a figure for demonstrating the chip | tip for the conventional rotation angle measurement. It is a bottom view for demonstrating the rotation angle measuring device using the chip | tip for rotation angle measurement of this embodiment. It is sectional drawing for demonstrating the rotation angle measuring device using the chip | tip for rotation angle measurement of this embodiment. FIG. 3 is a diagram for explaining a rotation angle measurement chip according to the first embodiment. It is a side view for demonstrating the rotation angle measuring device using the chip | tip for rotation angle measurement of this embodiment. It is a figure showing the comparison with the time of the time of the normal time of the output signal of a Hall element, and an error generation. It is a figure showing the comparison with the time of the time of the normal time of the output signal of a Hall element, and an error generation. It is a figure which shows the shape of a chip | tip for rotation angle measurement, and a stress measurement position. It is a figure showing the relationship between a measurement position and stress. It is a figure for demonstrating the chip | tip for rotation angle measurement of Embodiment 2. FIG. It is a figure for demonstrating the rotation angle measurement chip | tip of Embodiment 3. FIG. It is a figure for demonstrating the rotation angle measurement chip | tip of Embodiment 3. FIG. It is a figure for demonstrating the rotation angle measurement chip | tip of Embodiment 4. FIG. It is a figure showing the case where the angle | corner which X 'axis and Y' axis make is (theta) degree. FIG. 10 is a diagram for explaining a rotation angle measurement chip according to a fifth embodiment. FIG. 10 is a diagram illustrating an arrangement of a conventional Hall element compared with Embodiment 5. It is a figure showing arrangement | positioning of the magnetic convergence board and Hall element on the chip | tip for the conventional rotation angle measurement. It is sectional drawing of the rotation angle measuring device using the conventional chip for rotation angle measurement. It is a figure for demonstrating the comparison of the stress of the longitudinal direction of a conventional rotation angle measurement chip | tip, and a transversal direction. It is a figure for demonstrating the comparison of the stress of the longitudinal direction of a conventional rotation angle measurement chip | tip, and a transversal direction. It is a figure for demonstrating the comparison of the stress of the longitudinal direction of a conventional rotation angle measurement chip | tip, and a transversal direction. It is a figure showing the stress ratio of the stress on the X-axis and the stress on the Y-axis which are equidistant from the center of the conventional tip for rotation angle measurement.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
2 and 3 are a bottom view and a sectional view for explaining a rotation angle measuring device using the rotation angle measuring chip 1 of the present invention. 2 and 3, a rectangular chip mounting substrate 3 on which a rectangular rotation angle measuring chip 1 is installed has a plurality of terminals 5 connected to both side surfaces in the longitudinal direction. A rotation angle measuring chip 1 whose longitudinal direction is perpendicular to the longitudinal direction of the substrate 3 is installed at the central portion on the surface of the substrate 3. A disc-shaped magnetic converging plate 7 is installed at the center on the surface of the rotation angle measuring chip 1. Further, the entire chip mounting substrate 3 is covered with a resin mold 8.

FIG. 4 is a diagram for explaining the rotation angle measuring chip 1 according to the first embodiment of the present invention. On the surface of the rotation angle measuring chip 1, a circle center point 9 which is an intersection of the rotation angle measuring chip 1 and the rotation axis of the magnetic pole rotating body is provided. On the circumference of a circle whose center is the circle center point 9 and whose radius is the same as the radius of the magnetic converging plate, the X-axis Hall elements 11a and 11b, the Y-axis Hall element 1
3a and 13b are installed at point-symmetrical positions with respect to the circle center point 9, respectively. That is, two line segments 12a connecting the X-axis Hall elements 11 and the Y-axis Hall elements 13 to each other,
12b intersects at the center point 9 of the circle. Further, the distance from the circle center point 9 to the X-axis Hall element 11a is equal to the distance from the circle center point 9 to the X-axis Hall element 11b, and the distance from the circle center point 9 to the Y-axis Hall element 13a is equal to the circle. The distance from the center point 9 to the Y-axis hall element 13b is equal.

In addition, an X-axis Hall element 11a, a Y-axis Hall element 13b, and an X-axis Hall element 11
The b and Y-axis hall elements 13a are arranged in line-symmetrical positions with respect to the symmetry axis 15 parallel to the longitudinal direction of the rotation angle measuring chip 1 passing through the circular center point 9, respectively. That is, the line segment 14a connecting the X-axis Hall element 11b and the Y-axis Hall element 13a and the X-axis Hall element 1
Line segments 14b connecting 1a and the Y-axis hall element 13b are orthogonal to the symmetry axis 15, respectively.
Further, an intersection point between the line segment 14a and the symmetry axis 15 is defined as an intersection point 16a, and an intersection point between the line segment 14b and the symmetry axis 15 is defined as an intersection point 16b. At this time, the distance from the intersection 16a to the X-axis Hall element 11b is equal to the distance from the intersection 16a to the Y-axis Hall element 13a. The distance from the intersection 16b to the X-axis hall element 11a is equal to the distance from the intersection 16b to the Y-axis hall element 13b. Here, the orientation of the X-axis hall elements 11b to 11a and the Y-axis hall element 13 are as follows.
The directions from b to 13a are the positive direction of the X axis and the positive direction of the Y axis, respectively.

A method of detecting the rotation angle will be described with reference to FIG. When the magnetic field 17 is applied as shown in FIG.
Output differential voltages V (X +) and V (X− from each Hall element 11a, 11b, 13a, 13b
), V (Y +), and V (Y−) are a sine wave voltage and a cosine wave voltage as shown in the following equation (4).
V (X +) = A1 × cos θ
V (X −) = − A2 × cos θ
V (Y +) = A3 × sinθ
V (Y −) = − A4 × sinθ (4)

Here, A1, A2, A3, and A4 are proportional constants, and θ is an angle (magnetic field application angle) between the X-axis direction and the direction of the magnetic field 17 in FIG.

At this time, since the Hall elements 11b and 13a are in a line-symmetrical position with respect to the symmetry axis 15 and the applied stresses are substantially the same, A2 = A3. Similarly, since the Hall elements 11a and 13b are in a line-symmetrical position with respect to the symmetry axis 15 and the applied stresses are substantially the same, A1 = A4
It becomes. From the above, the equation (4) can be approximated as the following equation (4) ′.
V (X +) = A1 × cos θ
V (X −) = − A2 × cos θ
V (Y +) = A2 × sinθ
V (Y −) = − A1 × sinθ (4) ′

The output voltages Vx and Vy in the X-axis direction and the Y-axis direction are derived by taking the difference between these output voltages as in the following equation (5).
Vx = V1 (X +) − V2 (X −) = (A1 + A2) × cos θ
Vy = V1 (Y +) − V2 (Y −) = (A1 + A2) × sinθ (5)

  The relative angle is calculated using the output voltages Vx and Vy created here.

In signal processing, two magnetoelectric transducers detect magnetic fields with two axes orthogonal to each other about the rotation axis, and two types of sine wave signals with different phases output from these magnetoelectric transducers have a relationship between sine and cosine. In this case, the rotation angle can be calculated by dividing the following equation (6) and taking the arc tangent.
tan θ = Vy / Vx
∴ θ = arctan (Vy / Vx) (6)

From the above, if Hall elements are arranged as in the first embodiment, the influence of stress applied to each Hall element can be alleviated, and as a result, output voltages in the X-axis direction and the Y-axis direction can be reduced. Therefore, the angle error can be reduced. Thereby, the angle detection error can be reduced, and the rotation angle can be detected with high accuracy.

Furthermore, in the first embodiment, the X-axis Hall element 11a and the Y-axis Hall element 13a
The X-axis hall element 11b and the Y-axis hall element 13b are arranged in line-symmetric positions with respect to the symmetry axis 19 parallel to the lateral direction of the rotation angle measuring chip 1 passing through the circular center point 9, respectively. Can do. That is, the line segment connecting the X-axis Hall elements and the line segment connecting the Y-axis Hall elements can intersect at a right angle at the circle center point 9. As a result, the X-axis direction and Y
Since the output voltages in the axial direction can be made equal, the rotation angle can be detected with higher accuracy.

Only the X-axis Hall element 11b and the Y-axis Hall element 13a, or only the X-axis Hall element 11a and the Y-axis Hall element 13b can be used. However, the influence of offset can be reduced by using a plurality of Hall elements for X-axis and Hall elements for Y-axis. The line-symmetric symmetry axes 15 and 19 are not limited to passing through the center portion of the rotation angle measuring chip, and a position shifted from the center portion may be a line-symmetric symmetry axis.

However, the main stress generated in the chip is generated symmetrically with respect to a straight line parallel to the longitudinal direction of the chip and passing through the central part of the chip, and further, the central part of the chip is parallel to the lateral direction of the chip. Since they occur symmetrically in the straight line that passes through, the symmetrical axes 15 and 19 of line symmetry pass through the central portion of the rotation angle measuring chip in order to make the stress of the X-axis Hall element and Y-axis Hall element more uniform. A straight line is preferred.

FIG. 5 shows the X when the rotation angle is detected using the rotation angle measuring chip 1 of the first embodiment.
The magnetic field lines are shown when a horizontal magnetic field 17 is applied in the axial direction. The horizontal magnetic field 17 is converted into a magnetic field 17 perpendicular to the Hall element magnetosensitive surface that the magnetic converging plate 7 can feel with the Hall elements 11a and 11b.

6 and 7 are diagrams showing a comparison between when the output signal of the Hall element is normal and when an error occurs. In FIG. 6, when the output signal intensity 21 in the X-axis direction is equal to the output signal intensity 29 in the Y-axis direction, the circular waveform 25 that is normal in FIG. 7 is obtained. However, in FIG. 6, when an angle error occurs between the output signal strength 27 in the X-axis direction and the output signal strength 23 in the Y-axis direction, an elliptical waveform 31 when the error occurs in FIG. 7 is obtained. As described above, in the first embodiment, this angular error is reduced, and the rotation angle can be detected with high accuracy.

FIG. 8 is a diagram showing the shape and stress measurement position of the rotation angle measurement chip 1, where the longitudinal direction of the rotation angle measurement chip 1 is the X′-axis direction and the short direction is the Y′-axis direction. Due to the thickness of the package resin such as the resin mold 8 of the magnetic convergence plate 7, the difference in thermal expansion coefficient between the package resin and the chip, the cutting process of the substrate, and the like, It is conceivable that the stress applied to the top is different. Furthermore, for the above reasons, the stress at a position away from the center by a length L in the X′-axis direction and the stress at a position away from the center by the same length L in the Y′-axis direction are also greatly different from the center. Even in the distance position, the coordinate value in the X′-axis direction and Y
The stress varies greatly depending on the coordinate value in the 'axis direction.

This difference in stress occurs even when the rotation angle measuring chip 1 has a square shape.
If the shape of the rotation angle measuring chip 1 is a rectangle whose one side is longer than the other side, this tendency can be remarkable. Therefore, the relationship between the distance from each center and the stress is measured with the longitudinal direction of the rotation angle measuring chip 1 as the X ′ axis direction and the short direction as the Y ′ axis direction.

FIG. 9 is a diagram illustrating the relationship between the measurement position and the stress. A black circle 33 indicates the X′-axis direction,
A white circle 35 indicates the Y′-axis direction. From FIG. 9, in the X′-axis direction, the stress is higher as it is closer to the center, and the stress is lower as it is farther from the center, but the stress is substantially constant from a distance from the center of around 200 μm. Similarly, in the Y′-axis direction, the stress is higher as it is closer to the center, and the stress is generally lower as it is farther from the center, but the stress is becoming constant because the distance from the center is 3
It is around 00 μm.

(Embodiment 2)
FIG. 10 is a diagram for explaining the rotation angle measurement chip 41 according to the second embodiment of the present invention. The rotation angle measurement chip 41 of the second embodiment is different from the rotation angle measurement chip 1 of the first embodiment in that the Hall elements are the X-axis Hall elements 43a to 43d and the Y-axis Hall elements 45a to 45d, respectively. It is the point that four each are installed. The Hall elements according to the second embodiment form two hall elements for each of the X-axis hall element 43 and the Y-axis hall element 45, and the Hall elements 11a, 11b, 13a, and 13b according to the first embodiment are installed. One set of Hall elements (
43a, 43b), (43c, 43d), (45a, 45b), (45c, 45d).

  That is, the positions of the X-axis Hall element 43c and the Y-axis Hall element 45a are equal to the distance from the symmetry axis 46 parallel to the longitudinal direction of the rotation angle measuring chip 41 and passing through the circle center point 9, and these two holes A line segment 44 a connecting the elements 43 c and 45 a is orthogonal to the symmetry axis 46. Similarly to the X-axis Hall element 43c and the Y-axis Hall element 45d that are line-symmetric with respect to the symmetry axis 46, Hall elements 43d, 45b, and 43a, which are combinations of X-axis and Y-axis Hall elements. , 45c, 43b and 45d are equal in distance from the axis of symmetry 46. In addition, the line segments 44b, 44c, and 44d that connect the two Hall elements are orthogonal to the symmetry axis 46, and therefore are in a line symmetry position with respect to the symmetry axis 46.

Further, the positions of the X-axis hall elements 43b and 43c are equal in distance from the circle center point 9,
A line segment connecting these two Hall elements 43b and 43c passes through the circular center point 9. Similarly to the X-axis Hall elements 43b and 43c that are point-symmetric with respect to the circle center point 9, the X-axis Hall elements 43a and 43d, the Y-axis Hall elements 45a and 45d, the Y-axis Hall element 45b, and Each of 45 c is in a point-symmetrical position with respect to the circle center point 9. Thereby, since more output signals can be detected, the detection accuracy of the rotation angle can be improved as compared with the rotation angle measurement chip 1 of the first embodiment.

A method for detecting the rotation angle will be described with reference to FIG. When the magnetic field 47 is applied as shown in FIG. 10, the output differential voltages from the X-axis Hall elements (43a, 43b), (43c, 43d) are respectively V (X1 +), V (X2 +), V (X1 -), V (X2-). The differential output voltages from the Y-axis Hall elements (45a, 45b), (45c, 45d) are V (Y1 +), V (Y2 +), V (Y1-), and V (Y2-), respectively. These output differential voltages are a sine wave voltage and a cosine wave voltage represented by the following equation (7). Here, it is assumed that the X-axis Hall element 43 and the Y-axis Hall element 45 are separated from the X axis and the Y axis by an angle α.
V (X1 +) + V (X2 +) = A1 × cos (θ−α) + A1 × cos (θ + α)
V (X1 −) + V (X2 −) = − A2 × cos (θ + α) −A2 × cos (θ−α)

V (Y1 +) + V (Y2 +) = A3 × sin (θ−α) + A3 × sin (θ + α)
V (Y1 −) + V (Y2 −) = − A4 × sin (θ + α) −A4 × sin (θ−α)
... (7)

Here, A1, A2, A3, and A4 are proportional constants, and θ is an angle (magnetic field application angle) formed by counterclockwise rotation between the X-axis direction and the magnetic field 47 direction in FIG.

At this time, the Hall elements (43c, 43d) and (45a, 45b) are in a line-symmetrical position with respect to the symmetry axis 46, and the applied stresses are substantially the same, so A2 = A3. Similarly,
Since the Hall elements (45c, 45d) and (43a, 43b) are in a line-symmetrical position with respect to the symmetry axis 46 and the applied stresses are substantially the same, A1 = A4. From the above, the equation (7) can be approximated as the following equation (7) ′.
V (X1 +) + V (X2 +) = A1 × cos (θ−α) + A1 × cos (θ + α)
V (X1 −) + V (X2 −) = − A2 × cos (θ + α) −A2 × cos (θ−α)

V (Y1 +) + V (Y2 +) = A2 × sin (θ−α) + A2 × sin (θ + α)
V (Y1 −) + V (Y2 −) = − A1 × sin (θ + α) −A1 × sin (θ−α)
... (7) '

The output voltages Vx and Vy in the X-axis direction and the Y-axis direction are derived by taking the difference between these output voltages as in the following equation (8).
Vx = (V (X1 +) + V (X2 +)) − (V (X1 −) + V (X2−))
= 2 × A1 × cosθcosα + 2 × A2 × cosθcosα = 2 (A1 + A2) cosθcosα
Vy = (V (Y1 +) + V (Y2 +))-(V (Y1-) + V (Y2-))
= 2 × A2 × sinθcosα + 2 × A1 × sinθcosα = 2 (A1 + A2) sinθcosα
... (8)
Vx = 2 (A1 + A2) cos θ cos α
Vy = 2 (A1 + A2) sinθcosα (9)
From this, the rotation angle θ to be obtained is
tan θ = Vy / Vx
∴ θ = arctan (Vy / Vx) (10)

If the Hall elements are arranged as in the second embodiment, the influence of the stress applied to each Hall element can be alleviated even when the number of Hall elements is two or more. Since the coefficient of the output voltage in the axial direction becomes equal, the angle error can be reduced. As a result, X
Even when a plurality of hall elements for the axis and for the Y axis are arranged, the rotation angle can be detected with high accuracy.

The Hall element can also be arranged with the symmetry axis 48 parallel to the short direction of the rotation angle measuring chip 41 passing through the circle center point 9 as the symmetry axis. Moreover, a vertical Hall element, a magnetoresistive element, etc. can also be used for a magnetoelectric conversion element.

(Embodiment 3)
11 and 12 are diagrams for explaining the rotation angle measurement chip 61 according to the third embodiment of the present invention. The rotation angle measurement chip 61 according to the third embodiment is different from the rotation angle measurement chips 1 and 41 according to the first and second embodiments in that a set of two adjacent Hall elements is (63a, 63b).
) And (65a, 65b), and the rotation angle around the center point 9 between these two sets is a point other than a right angle. Another difference is that the Hall element has no X-axis or Y-axis division. In the third embodiment, the X axis direction and the Y axis direction for deriving the output voltage are the short direction and the long direction of the rotation angle measuring chip 61, respectively, and the Y axis passing through the circle center point 9 is the symmetry axis.
Two sets of Hall elements (63a, 63b) and (65a, 65b) are respectively installed in line-symmetric positions.

That is, the positions of the Hall elements 63a and 65b, 63b and 65a are the same distance from the Y axis which is the symmetry axis, and the line segments 64a and 64b connecting the Hall elements 63a and 65b, 63b and 65a are respectively connected to the Y axis. Go straight. A straight line passing through the circle center point 9 and passing through the contact point 66a of the Hall elements 63a and 63b is defined as a straight line L, and a straight line passing through the circle center point 9 and passing through the contact point 66b of the Hall elements 65a and 65b is defined as a straight line M.

A method for detecting the rotation angle will be described with reference to FIGS. When a magnetic field 67 is applied as shown in FIG. 11, output signals Vx and Vy in the X-axis direction and the Y-axis direction are derived by detecting output signals from the Hall elements 63a, 63b, 65a, and 65b. Here, in order to simplify the calculation, as shown in FIG. 12, the Hall elements (63a, 63b) and (65a, 65b)
The respective contact points 66a and 66b are replaced with Hall elements 63c and 65c on the straight line L and the straight line M with the center of the Hall element. At this time, the Hall elements 63c and 65c are in line-symmetric positions with the Y axis as the symmetry axis, as described above.

First, the proportional constants of the output signal strengths in the Hall elements 63a, 63b, 65a, and 65b are A1, A2, A3, and A4, respectively, and the Hall elements 63a and 63b, 65a, and 65b are used.
Are separated from the straight line L and the straight line M by an angle α. At this time, the Hall element 6
If the proportional constants of the output signal intensity at 3c and 65c are A12 and A34, respectively,
A12≡A1 × cosα + A2 × cosα = (A1 + A2) cosα
A34≡A3 × cosα + A4 × cosα = (A3 + A4) cosα
As a result, the Hall elements (63a, 63b) and (65a, 65b) can be replaced with Hall elements 63c and 65c.

Next, output differential voltages from the Hall elements 63c and 65c are respectively expressed as V (63c) and V
(65c). Further, the angle of the counterclockwise and the direction of the X-axis direction and the straight line L and theta _H, counterclockwise angle between the direction of the X-axis direction and the magnetic field 67 (magnetic field application angle) and theta _B.
These output differential voltages are a sine wave voltage and a cosine wave voltage represented by the following equation (11).
V (63c) = A12 × cos (θ _H −θ _B )
V (65c) = − A34 × cos (θ _H + θ _B ) (11)

Accordingly, the output voltages Vx and Vy in the X-axis direction and the Y-axis direction are derived by the following calculation to obtain the rotation angle θ _{B.
Vx = V (63c) cosθ H} + V (65c) cosθ H
_{= A12 × cos (θ H -θ} B) cosθ H + A34 × cos (θ H + θ B) cosθ H
= Cos θ _H {A12 (cos θ _H cos θ _B + sin θ _H sin θ _B )
+ A34 (cos θ _H cos θ _B −sin θ _H sin θ _B )}

_{Vy = V (63c) sinθ H} -V (65c) sinθ H
_{= A12 × cos (θ H -θ} B) sinθ H -A34 × cos (θ H + θ B) sinθ H
= Sin θ _H {A12 (cos θ _H cos θ _B + sin θ _H sin θ _B )
−A34 (cos θ _H cos θ _B −sin θ _H sin θ _B )}
(12)

At this time, the Hall elements 63c and 65c are in a line-symmetrical position with respect to the Y axis, and the applied stresses are substantially the same, so A12 = A34 = A. From the above, the equation (12) can be approximated as the following equation (13).
Vx = 2A × cos ² θ _H cos θ _B
Vy = 2A × sin ² θ _H sin θ _B (13)
From this, the required rotation angle θ _B is
Vy / Vx = sin ² θ _H sin θ _B / cos ² θ _H cos θ _B
= Γ (θ _H ) × tanθ _B
∴ θ _B = arctan (Vy / γ (θ _H ) Vx) (14)
However, γ (θ _H ) is known from an arbitrary set value θ _H.

If Hall elements are arranged as in the third embodiment, the influence of the stress applied to each Hall element is alleviated even if the rotation angle around the center point 9 between the two sets of Hall elements is other than a right angle. The coefficients of the output voltages in the X-axis direction and the Y-axis direction can be made equal. This
Since the angle error can be reduced, the rotation angle can be detected with high accuracy.

(Embodiment 4)
FIG. 13 is a configuration diagram for explaining a rotation angle measurement chip 1301 according to the fourth embodiment of the present invention. The magnetic convergence plate 1303 and the Hall elements X and Y on the rotation angle measurement chip 1301 formed of a silicon substrate. It is a block diagram for demonstrating the positional relationship with these. In FIG. 13, a line segment passing through the midpoint of the long side of the rectangular rotation angle measurement chip 1301 and parallel to the short side is a line segment 1, and the midpoint of the short side of the rotation angle measurement chip 1301 is parallel to the long side. Assuming that the straight line segment is the line segment 2, the orthogonal point of the line segment 1 and the line segment 2 becomes the center point 1305 of the rotation angle measuring chip 1301. Further, a line segment passing through the circle center point 1307 of the disk-shaped magnetic converging plate 1303 on the surface of the rotation angle measuring chip 1301 and parallel to the line segment 1 is defined as a line segment 3.

  The rotation angle measurement chip 1301 of the fourth embodiment is different from the rotation angle measurement chips 1, 41, and 61 of the first to third embodiments in that the circle center point 1307 of the magnetic convergence plate 1303 is on the line segment 2. Is not on line segment 1. That is, the fourth embodiment exemplifies a case where the center point 1305 of the rotation angle measuring chip 1301 and the circle center point 1307 of the magnetic convergence plate 1303 do not match.

  On the circumference of the magnetic flux concentrator plate 1303, four Hall elements X 1, X 2, Y 1, and Y 2 are arranged at an equal distance from the circle center point 1307 as in the first embodiment. Hall elements X1 and Y1, X2 and Y2 are arranged in line-symmetrical positions with respect to line segment 2, respectively, and Hall elements X1 and Y2, X2 and Y1 are line-symmetrical positions with respect to line segment 3, respectively. Is arranged.

Further, since the linear expansion coefficients of the silicon substrate forming the rotation angle measurement chip 1301 and the package material (mold resin or the like) are different, stress is generated at each point on the surface of the rotation angle measurement chip 1301. The direction of stress at each point is defined by arrows (σ ₀ , σ ₄₅ , σ ₉₀ , σ ₁₃₅ ) in FIG. σ ₀ is a stress in a direction parallel to the short side of the rotation angle measuring chip 1301, and σ ₉₀ is a stress in a direction parallel to the long side of the rotation angle measuring chip 1301. Further, σ ₄₅ and σ ₁₃₅ are stresses in a direction of 45 degrees with respect to the short side and the long side of the rotation angle measuring chip 1301. Further, the X axis and the Y axis are defined in directions parallel to the short side and the long side of the rotation angle measuring chip 1301, respectively. Further, when the X-axis is defined as the 0 degree direction, the 45-degree direction is defined as the X ′ axis and the 135-degree direction is defined as the Y′-axis counterclockwise, and the X′-axis direction and the Y′-axis direction are defined. The angle formed counterclockwise is defined as θ. The X ′ axis is parallel to a line segment 1309 connecting Hall elements X1 and X2, and the Y ′ axis is parallel to a line segment 1311 connecting Hall elements Y1 and Y2. The line segment 1309 and the line segment 1311 are orthogonal to each other at the circle center point 1307.
Here, when the magnetic field B exists in the horizontal direction with respect to the rotation angle measuring chip 1301, the magnetic field component parallel to the X ′ axis is B _{X ′} and the magnetic field component parallel to the Y ′ axis is B _{Y ′} . Let θ _B be the angle formed by the counterclockwise rotation between the X′-axis direction and the magnetic field B direction. That is, the angle formed by the X axis and the Y axis is 90 degrees, and the angle formed by the X ′ axis and the Y ′ axis is also 90 degrees.

Respective output voltages V (X1), V (X2), V (Y1), and V (Y2) of the Hall elements X1, X2, Y1, and Y2 are expressed by the following equation (15). Here, the current flowing through the magnetic flux concentrating plate 1303 is I, the magnetic sensitivities of the Hall elements X1, X2, Y1, and Y2 are SI _X1 , SI _X2 , SI _Y1 , and SI _Y2 , respectively, and the offset is Offset. _{Let x1} , Offset _x2 , Offset _y1 , and Offset _y2 . In order to accurately calculate the direction of the magnetic field B horizontal to the surface of the rotation angle measuring chip 1301 using the following equation (15), as shown in the following equation (16), the offsets Offset _{x1 to} Offset _y2 are magnetic fields. The sum of the magnetic sensitivities of the Hall elements X1 and X2 needs to be equal to the sum of the magnetic sensitivities of the Hall elements Y1 and Y2.

The magnetic sensitivities SI _{X1 to} SI _Y2 of the Hall element are affected by stress. This effect is called the piezo hall effect, and is expressed by the following equation (17) using the piezo hall coefficient P ₁₂ .
The condition that “the sum of the magnetic sensitivities of the Hall elements X1 and X2 is substantially equal to the sum of the magnetic sensitivities of the Hall elements Y1 and Y2” is that (i) the magnetic sensitivities when there is no stress are substantially equal in all the Hall elements. And (ii) when the stresses of the Hall elements X1 and Y1 are substantially equal and (iii) the stresses of the Hall elements X2 and Y2 are substantially equal, this can be achieved with high accuracy. The condition (i) can be achieved by manufacturing all the Hall elements X1, X2, Y1, and Y2 with the same shape and the same conditions. The condition (ii) can be achieved by arranging the Hall elements X1 and Y1 in line-symmetric positions with respect to the line segment 2 that passes through the center point of the silicon substrate and is parallel to the long side of the silicon substrate. This can be explained by the fact that in the case of a symmetrical shape, the symmetry is also established in the stress. The condition (iii) is the same, and can be achieved by arranging the Hall elements X2 and Y2 in line-symmetric positions with respect to the line segment 2.

  With respect to the line segment 1 or the line segment 2, the stress received by the hall elements arranged in line-symmetric positions is substantially equal. The piezo Hall effect does not depend on the number of Hall elements. Therefore, this effect is arranged in a line-symmetrical position with respect to line segment 1 or line segment 2 when considering a hall element group formed by a set of two hall elements in a line-symmetrical position. This is effective for at least one group of hall elements. The above effect is also effective for a magnetic field measuring apparatus that does not require a magnetic focusing plate.

  FIG. 14 is a diagram illustrating a case where the angle formed by the X ′ axis and the Y ′ axis in FIG. 13 is not limited to 90 degrees but θ degrees. In FIG. 13, the angle formed by the X ′ axis and the Y ′ axis is 90 degrees, but it may not be 90 degrees as long as it is a known angle by design. Even when the angle between the X ′ axis and the Y ′ axis is designed as θ degrees as shown in FIG. 14, the magnetic field strength in the Y2 axis direction perpendicular to the X ′ axis can be easily calculated from the magnetic field strength in the Y ′ axis direction. Because.

  In the present embodiment, the case where the center point 1307 is on the line segment 2 is illustrated, but the present invention can also be implemented when the center point 1307 is on the line segment 1 but not on the line segment 2.

(Embodiment 5)
FIG. 15 is a configuration diagram for explaining a rotation angle measurement chip 1501 according to the fifth embodiment of the present invention. The magnetic convergence plate 1503 and the Hall elements X and Y on the rotation angle measurement chip 1501 formed of a silicon substrate. It is a block diagram for demonstrating the positional relationship with these. In FIG. 15, similarly to FIG. 13, line segment 1 and line segment 2 are provided, and an orthogonal point of line segment 1 and line segment 2 is set as a center point 1505 of rotation angle measuring chip 1501. A line segment passing through the circle center point 1507 of the magnetic flux concentrator plate 1503 and parallel to the line segment 1 is defined as a line segment 3, and a line segment passing through the circle center point 1507 and parallel to the line segment 2 is defined as a line segment 4.

  The rotation angle measurement chip 1501 of the fifth embodiment is different from the rotation angle measurement chip 1301 of the fourth embodiment in that the circle center point 1507 of the magnetic convergence plate 1503 is neither on the line segment 1 nor on the line segment 2. Is a point. On the circumference of the magnetic flux concentrating plate 1503, four Hall elements X 3, X 4, Y 3, and Y 4 are arranged at an equal distance from the circle center point 1507 as in the fourth embodiment. Hall elements X3 and Y3, and X4 and Y4 are arranged at positions symmetrical with respect to line segment 4, respectively. Hall elements X3 and Y4, and X4 and Y3 are respectively positioned with line symmetry with respect to line segment 3. Is arranged.

  In the vicinity of the center point 1505 on the rotation angle measurement chip 1501, the stress in the direction perpendicular to the rotation angle measurement chip 1501 is sufficiently smaller than the stress in the direction parallel to the rotation angle measurement chip 1501. Therefore, the stress in the direction perpendicular to the rotation angle measuring chip 1501 can be almost ignored. On the other hand, in the vicinity of the end portion on the rotation angle measurement chip 1501, the stress in the direction perpendicular to the rotation angle measurement chip 1501 is not negligible compared to the stress in the direction parallel to the rotation angle measurement chip 1501. The stress in the direction perpendicular to the rotation angle measuring chip 1501 greatly affects the magnetic sensitivity and offset of the Hall element.

  FIG. 16 is a diagram illustrating the arrangement of the Hall elements in the prior art as compared with the arrangement of the Hall elements in the fifth embodiment of FIG. In FIG. 16, similarly to FIG. 15, a magnetic convergence plate 1603 is installed on the rotation angle measuring chip 1601, and four Hall elements X5, X6, Y5, and Y6 are arranged on the circumference of the magnetic convergence plate 1603. They are arranged equidistant from the circle center point 1307. Similarly to FIG. 15, the orthogonal point of line segment 1 and line segment 2 is set as the center point 1605 of the rotation angle measuring chip 1601, a line passing through the circle center point 1507 of the magnetic convergence plate 1603 and parallel to the line segment 1. A segment is a line segment 3, and a line segment passing through the circle center point 1507 and parallel to the line segment 2 is a line segment 4. Hall elements X5, X6, Y5, and Y6 correspond to Hall elements X3, X4, Y3, and Y4, respectively.

  The rotation angle measurement chip 1601 in FIG. 16 is different from the rotation angle measurement chip 1501 of the fifth embodiment in that the Hall elements X5 and X6 are on the line segment 3 and the Hall elements Y5 and Y6 are on the line segment 4. There is a point.

In the case of FIG. 16, only the Hall element X5 out of the four Hall elements is close to the end of the rotation angle measurement chip 1601, and is affected by stress in a direction perpendicular to the rotation angle measurement chip 1601. Therefore, in the formula (15), when calculation is performed with X1 as X5, the magnetic sensitivity SI _X5 of the Hall element _X5 and the offset

However, since it differs greatly from the magnetic sensitivity and offset of other Hall elements, an error occurs when the angle θ _B of the magnetic field B is obtained by the equation (16).

On the other hand, in the case of the arrangement of the Hall elements of the present embodiment of FIG. 15, the Hall elements X3 and Y4 are close to the end of the rotation angle measuring chip 1601. Therefore, the magnetic sensitivities and offsets of the Hall elements X3 and Y4 are affected by the stress in the direction perpendicular to the rotation angle measurement chip 1601, but the ratio (Y / X) or difference (Y−X) is not calculated. Thus, the magnetic sensitivity of X3 and Y4 and the influence of the offset cancel each other, and as a result, an error does not easily occur when the angle θ _B of the magnetic field B is obtained by the equations (15) and (16). Here, in this embodiment, X1, X2, Y1, and Y2 in the mathematical formulas (15) and (16) are calculated as X3, X4, Y3, and Y4, respectively.

  FIG. 17 is a diagram showing the arrangement of magnetic converging plates 1703 and Hall elements on a conventional rotation angle measuring chip 1701. In FIG. 17, a magnetic converging plate 1603 is installed on a rotation angle measuring chip 1701, and four Hall elements X7, X8, Y7, and Y8 are arranged on the circumference of the magnetic converging plate 1703 from a circular center point 1707, etc. Arranged at a distance. The rotation angle measurement chip 1701 in FIG. 17 is different from the rotation angle measurement chip 1601 in FIG. 16 in that the center point 1705 of the rotation angle measurement chip 1701 and the circle center point 1707 of the magnetic convergence plate 1703 match. The hall elements X7 and X8 are on the line segment 1, and the hall elements Y7 and Y8 are on the line segment 2.

  FIG. 18 is a cross-sectional view of a rotation angle measurement device using a conventional rotation angle measurement chip 1701. A lead frame 1803 which is a rectangular chip mounting board on which the rotation angle measuring chip 1701 is installed is covered with a package outer shape 1805. The rotation angle measuring chip 1701 is installed at the center of the top surface of the lead frame 1803 such that each side thereof is parallel to the corresponding side of the lead frame 1803.

  19 to 21 are diagrams for explaining a comparison of stresses in the longitudinal direction and the short direction of the conventional rotation angle measuring chip 1701. In order to clarify the effect of the present invention, simulation calculation of stress on the rotation angle measurement chip 1701 was performed by changing the length of the rotation angle measurement chip 1701 in the short direction. FIGS. 19 to 21 show a case where the lead frame 1803 is square as an example.

  FIG. 19 shows the case where the length in the longitudinal direction (X-axis direction) of the rotation angle measuring chip 1701 is 2.0 mm and the length in the short-side direction (Y-axis direction) is 2.0 mm.

  FIG. 20 shows a case where the length in the longitudinal direction (X-axis direction) of the rotation angle measuring chip 1701 is 2.0 mm and the length in the short-side direction (Y-axis direction) is 1.6 mm.

  FIG. 21 shows a case where the length in the longitudinal direction (X-axis direction) of the rotation angle measuring chip 1701 is 2.0 mm and the length in the short-side direction (Y-axis direction) is 1.2 mm.

  The plots in the vicinity of the center of the rotation angle measurement chip 1701 in FIGS. 19 to 21 are points where the stress is calculated, and the stress is calculated every 100 μm in the X axis direction and the Y axis direction from the center of the rotation angle measurement chip 1701. doing. The X-axis Hall elements X7 and X8 in FIG. 17 and the Y-axis are compared by comparing the stress at the point on the X-axis and the stress at the point on the Y-axis that are equidistant from the center of the rotation angle measuring chip 1701. The stress received by the hall elements Y7 and Y8 can be compared.

  FIG. 22 is a diagram showing the stress ratio between the stress at the point on the X axis and the stress at the point on the Y axis that are equidistant from the center of the conventional rotation angle measuring chip 1701 in FIGS. The line graphs 2201, 2033, and 2205 in FIG. 22 are the X-axis at locations that are equidistant from the center of the rotation angle measurement chip 1701 in FIGS. 19, 20, and 21 in the X-axis direction and the Y-axis direction, respectively. The result of having calculated the stress ratio (stress on the X-axis / stress on the Y-axis) between the stress on the upper side and the stress on the Y-axis is shown. In this embodiment, the stress ratio is calculated as the stress on the X axis / the stress on the Y axis. However, the stress ratio may be calculated as the stress on the Y axis / the stress on the X axis.

  From the results of FIG. 22, it can be seen that the stress applied to the Y-axis Hall element and the X-axis Hall element is significantly different as the ratio of the short side to the long side of the rotation angle measuring chip 1701 increases. The angle error of the required magnetic field generated due to this difference in stress does not occur when it is arranged at the position of the Hall element of the present invention. That is, it can be seen that the effect of the present invention becomes more remarkable as the ratio of the short side to the long side of the rotation angle measuring chip increases.

  According to the present invention, the ratio of the short side to the long side (the length of the long side / the length of the short side) of the rotation angle measuring chip may be 1.3 or more, or may be 1.5 or more. 1.8 or more, or 2.0 or more. That is, the present invention can be implemented regardless of the value of the ratio of the short side to long side of the rotation angle measuring chip 1701.

  The magnetic field application angle θ1 calculated by the rotation angle measurement device (rotation angle sensor) in each of the above embodiments is preferably converted into an angle based on the longitudinal direction or the short direction of the rotation angle measurement chip. That is, when the longitudinal direction of the rotation angle measuring chip is the X-axis direction and the angle between the X-axis direction and the X′-axis direction is θ2, the rotation angle measuring device (rotation angle sensor) of each of the above embodiments is a magnetic field. The application angle is calculated to be θ1 + θ2, and converted to an angle based on the longitudinal direction of the rotation angle measuring chip.

  The conversion method of the magnetic field application angle is not particularly limited, but is preferably performed by arithmetic processing (soft conversion). If the angle θ1 before the calculation process (soft conversion) is changed to the angle θ1 + θ2 after the conversion by the soft conversion, that is, the reference direction of the magnetic field application angle is determined by the soft conversion in the longitudinal direction of the rotation angle measuring chip. If converted to, it will be easier for the user to use. In each of the above embodiments, the longitudinal direction of the rotation angle measuring chip is the X-axis direction, but the short direction may be the X-axis direction.

  In each of the above embodiments, an example in which the number of Hall elements is four has been described. However, the same effect can be produced even if the number of Hall elements increases. That is, for example, when two Hall elements at line symmetrical positions are considered as a set of Hall element groups, the distance between the Hall element and the end of the rotation angle measurement chip 1501 is the closest to the rotation angle measurement chip 1501. An effective effect can be produced with respect to at least one set of Hall element groups arranged in line-symmetric positions with respect to the line segment 3 or the line segment 4 perpendicular to one side.

  In each of the above embodiments, the magnetic flux concentrating plate has been described as having a circular shape, but may be any of a polygonal shape, an elliptical shape, and a fan shape. Further, the distance between the magnetic converging plate and the Hall element is an arbitrary distance, and the Hall element may be directly under the magnetic converging plate, and even if the Hall element and the magnetic converging plate do not overlap when viewed in plan. Good.

  Moreover, although each said embodiment demonstrated using a Hall element as a magnetoelectric conversion element, a vertical Hall element, a magnetoresistive element, etc. can also be used.

Embodiments 1 to 5 exemplify a rotation angle measurement device. However, if the magnetic field of the magnetic pole rotating body in the rotation angle measurement device is replaced with geomagnetism, all of the embodiments are azimuth angle detection device examples. Similarly, when measuring the direction of the magnetic field generated by the current, it is possible to measure the direction of the magnetic field with high accuracy and to measure the direction of the current.

The present invention is particularly effective when detecting the direction of a magnetic field horizontal to the chip.

Further, in the present invention, when the shape of the substrate is a rectangle in which one side is longer than the other side, the advantage over the prior art becomes more remarkable.

The magnetic field direction measuring device of the present invention can be used for a rotation angle measuring device and an azimuth measuring device. The rotation angle measuring device can be used for controlling the rotation of the steering of a passenger car or measuring the rotation angle of a rotating shaft attached to a motor, and the azimuth measuring device can be used for a navigation system or the like.

1, 41, 51, 61, 1301, 1501, 1601, 1701 Rotation angle measurement chip 3 Chip mounting board 5 Terminal
7, 1303, 1503, 1603, 1703 Magnetic converging plate 8 Resin mold
9, 1307, 1507, 1607, 1707 Circle center points 11a-11b, 43a-43d, 53a-53b, X1-X8 X-axis Hall elements 12a-12b, 14a-14b, 44a-44d, 1309, 1311, 1509, 1511 Line segments 13a to 13b, 45a to 45d, 55a to 55b, Y1 to Y8 Y-axis Hall element 15, 19, 46, 48 Axis of symmetry 16a, 16b Intersection points 17, 47, 57, 67 Magnetic field 21, 27 X-axis direction Output signal strength 23, 29 output signal strength in the Y-axis direction 25 circular waveform 31 elliptical waveform 33 black circle 35 white circle 63a-63c, 65a-65c Hall element 64, 66 contact
1803 Lead frame 1805 Package outline 2201, 2032, 2205 Line graph L, M Straight line

Claims (8)

A substantially rectangular silicon substrate; a first Hall element disposed on a substantially circumference having a predetermined point on the silicon substrate surface as a circle center point; and detecting a magnetic component in a first direction; and Each including at least one second Hall element that detects a magnetic component in a second direction different from the direction of one,
The first Hall element and the second Hall element have a magnetic sensitive surface with respect to a magnetic component in a third direction perpendicular to the silicon substrate surface,
A magnetic converging plate that converts the magnetic component in the first direction and the magnetic component in the second direction into the magnetic component in the third direction;
The first hall element and the second hall element is arranged at a position in the longitudinal direction or axisymmetric a straight line on parallel said silicon substrate surface in the lateral direction of the silicon substrate was set to symmetry axis of the silicon substrate Has been
The circle center point coincides with the intersection of the parallel line segments as long side of the middle point of the parallel line segments and said short sides to the short side of the street the silicon substrate midpoint of the long side of the silicon substrate Magnetic field direction measuring device characterized by not. 2. The magnetic field direction measuring apparatus according to claim 1, wherein the first Hall element and the second Hall element are arranged at positions rotated 90 degrees with respect to the center point of the circle. A third Hall element arranged in a point-symmetrical position with the first Hall element with respect to the circle center point, and a point-symmetrical position with the second Hall element with respect to the circle center point. that a fourth magnetic field direction measuring device according to any one of claims 1 2, characterized in that it comprises a Hall element. According to any one of the direction of the magnetic field by the processing claim, wherein the conversion of the output relative to the direction parallel to the transverse direction of the longitudinal or the silicon substrate of the silicon substrate 3 Magnetic field direction measuring device. Field direction measurement according to any one of claims 1 to 4 in which the ratio of the longitudinal length of the silicon substrate to the length of the lateral direction of the silicon substrate is characterized in that 1.3 or more apparatus. And the silicon substrate of a substantially rectangular, and the magnetic pole rotating body for generating magnetic pole has a vertical axis of rotation to the plane of the silicon substrate, on the surface of the silicon substrate, and the surface and the intersection of the axis of rotation of the silicon substrate A first Hall element that is disposed on a substantially circumference with the position at the center of the circle and detects a magnetic component in a first direction; and a magnetic component in a second direction that is different from the first direction. At least one second Hall element to be detected,
The first Hall element and the second Hall element have a magnetosensitive surface with respect to a magnetic component in a third direction perpendicular to the surface of the silicon substrate,
A magnetic converging plate that converts the magnetic component in the first direction and the magnetic component in the second direction into the magnetic component in the third direction;
The first hall element and the second hall element is arranged at a position in the longitudinal direction or axisymmetric a straight line on parallel said silicon substrate surface in the lateral direction of the silicon substrate was set to symmetry axis of the silicon substrate Has been
The circle center point coincides with the intersection of the parallel line segments as long side of the middle point of the parallel line segments and said short sides to the short side of the street the silicon substrate midpoint of the long side of the silicon substrate The rotation angle measuring device characterized by not performing. Rotation angle according to claim 6, characterized in that converting the rotation angle of the magnetic pole rotating body to the output relative to the direction parallel to the transverse direction of the longitudinal or the silicon substrate of the silicon substrate by the processing Measuring device. Rotation angle measuring device according to claim 6 or 7 ratio of the longitudinal length of the silicon substrate to the length of the lateral direction of the silicon substrate is equal to or 1.3 or more.

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