JP6135721B2 - Lead frame with resin and manufacturing method thereof, and semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a lead frame with a resin used for mounting an LED element and a method for manufacturing the same, and a semiconductor device including such a lead frame with a resin and a method for manufacturing the same.

  2. Description of the Related Art Conventionally, lighting devices that use LED (light emitting diode) elements as light sources have been used for various home appliances, OA equipment, display lights for vehicle equipment, general lighting, in-vehicle lighting, displays, and the like. Some such lighting devices include a semiconductor device having a lead frame and LED elements.

  As such a semiconductor device, for example, in Patent Document 1, a concave portion is formed on one surface side of a Cu substrate, an LED element is mounted on the concave portion, and a connection is provided on an insulating layer disposed on the concave portion side. It is described that a Cu wiring layer is formed, LED terminal portions and Cu wiring layers are connected by wire bonding, and resin-sealed. Moreover, in patent document 1, Ag plating is given to the Cu wiring layer surface.

JP 2006-245032 A

  Recently, in order to reduce the thickness of a semiconductor device, for example, an LED element is mounted on a semiconductor device of a SON (Small Outline Non-leaded Package) type. Some of such semiconductor devices have a transparent resin (sealing resin) that seals the LED element and a resin (outside resin) for controlling reflected light from the LED element.

  In recent years, there has been a demand for improving the luminous efficiency of such a semiconductor device and further improving the luminance of the LED semiconductor device. For this reason, in order to improve the reflective performance of the light from the LED element mounted in a semiconductor device, it is attempted to improve the reflective layer that reflects the light from the LED element.

  The present invention has been made in consideration of the above points, and in a semiconductor device including an LED element, a resin-attached material capable of improving the reflection performance of light from the LED element and increasing the light emission efficiency in the semiconductor device. It is an object of the present invention to provide a lead frame and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. Furthermore, the present invention provides a lead frame with a resin, a method for manufacturing the same, and a semiconductor device capable of preventing a decrease in adhesion strength between an outer resin and an Ag plating layer in accordance with the processing for improving the light reflection performance. And it aims at providing the manufacturing method.

  The present invention relates to a lead frame with resin for an LED element, in which the LED element is placed and a sealing resin for sealing the LED element is provided, and an outer resin provided on the lead frame and surrounding the LED element The lead frame includes a main body having a mounting surface on which the LED element is mounted, and an Ag plating layer provided on the main body and functioning as a reflective layer for reflecting light from the LED element. In addition, the Ag plating layer is composed of an outer resin corresponding part corresponding to the outer resin and a sealing resin corresponding part corresponding to the sealing resin, and the glossiness of the sealing resin corresponding part of the Ag plating layer corresponds to the outer resin. This is a lead frame with resin characterized by having a glossiness higher than that of the portion.

  The present invention is the lead frame with resin, wherein the main body portion is made of copper, copper alloy, or 42 alloy.

  The present invention is characterized in that the sealing resin corresponding portion of the Ag plating layer is obtained by electrolytically peeling the surface of the Ag plating layer with respect to the Ag plating layer of the lead frame using the outer resin as a mask. It is a lead frame with resin.

  The present invention provides a semiconductor device including a main body having a mounting surface on which an LED element is mounted, and an Ag plating layer provided on the main body and functioning as a reflective layer for reflecting light from the LED element. Including a lead frame, an LED element mounted on the mounting surface of the main body of the lead frame, a conductive portion that electrically connects the lead frame and the LED element, and the LED element provided on the lead frame. An outer resin that surrounds the sealing resin that seals the LED element and the conductive portion, and the Ag plating layer of the lead frame includes an outer resin corresponding portion that corresponds to the outer resin, and a sealing resin that corresponds to the sealing resin The semiconductor device is characterized in that the glossiness of the sealing resin corresponding portion of the Ag plating layer is higher than that of the outer resin corresponding portion.

  The present invention is the semiconductor device characterized in that the main body portion is made of copper, a copper alloy, or a 42 alloy.

  The present invention is the semiconductor device characterized in that the sealing resin is made of a silicone resin.

  The present invention is a semiconductor device characterized in that the outer resin has a recess surrounding the LED element, and the sealing resin is filled in the recess of the outer resin.

  The present invention manufactures a lead frame with a resin having a lead frame on which an LED element is placed and a sealing resin for sealing the LED element is provided, and an outer resin that is provided on the lead frame and surrounds the LED element. In the method of manufacturing a lead frame with resin, a step of preparing a main body portion having a mounting surface on which an LED element is mounted, and forming a lead plating layer on the main body portion by forming an Ag plating layer that functions as a reflective layer. The step of forming, the step of forming the outer resin on the Ag plating layer of the lead frame, and the electrolytic plating of the surface with respect to the Ag plating layer of the lead frame, the Ag plating layer corresponds to the outer resin. A step of forming an outer resin corresponding part and a sealing resin corresponding part corresponding to the sealing resin, and the glossiness of the sealing resin corresponding part of the Ag plating layer is: It is a manufacturing method of the resin with the lead frame, wherein a higher than glossiness of the side resin counterpart.

  The present invention is characterized in that the sealing resin corresponding portion of the Ag plating layer is obtained by electrolytically peeling the surface of the Ag plating layer with respect to the Ag plating layer of the lead frame using the outer resin as a mask. This is a method of manufacturing a lead frame with resin.

  The present invention is a method for manufacturing a resin-attached lead frame, wherein a step of removing resin burrs generated on the Ag plating layer of the lead frame is provided after the step of forming the outer resin.

  The present invention provides a method of manufacturing a semiconductor device, a step of producing a lead frame with resin by a method of manufacturing a lead frame with resin, a step of mounting an LED element on a mounting surface of a main body portion of the lead frame with resin, A method for manufacturing a semiconductor device, comprising: a step of connecting an LED element and a lead frame with a conductive portion; and a step of resin-sealing the LED element and the conductive portion with a sealing resin.

  According to the present invention, the glossiness of the sealing resin corresponding portion of the Ag plating layer is higher than the glossiness of the outer resin corresponding portion, and the light from the LED element is reflected by the sealing resin corresponding portion having a high glossiness. It is supposed to let you. As a result, the reflection performance of light from the LED elements in the semiconductor device can be enhanced, and the light emission efficiency of the semiconductor device can be enhanced. On the other hand, since the outer resin is formed on the Ag plating layer before the processing step for increasing the glossiness of the Ag plating layer, the adhesion strength between the outer resin and the Ag plating layer is reduced due to the influence of the processing for increasing the glossiness. Can be prevented.

Sectional drawing which shows the lead frame with resin by one embodiment of this invention. Sectional drawing which shows the semiconductor device by one embodiment of this invention (II-II sectional view taken on the line of FIG. 3). The top view which shows the semiconductor device by one embodiment of this invention. FIG. 4 is a schematic enlarged cross-sectional view of the semiconductor device according to the embodiment of the present invention (an enlarged view of a portion IV in FIG. 2). Sectional drawing which shows the manufacturing method of the lead frame with resin by one embodiment of this invention. Sectional drawing which shows the manufacturing method of the lead frame with resin by one embodiment of this invention. The figure which shows the process of forming Ag plating layer among the manufacturing methods of the lead frame with resin by one embodiment of this invention. The figure which shows an electrolytic peeling process among the manufacturing methods of the lead frame with resin by one embodiment of this invention. Sectional drawing which shows the manufacturing method of the semiconductor device by one embodiment of this invention. Sectional drawing which shows the state by which the semiconductor device by one embodiment of this invention is arrange | positioned on the wiring board. Sectional drawing which shows the modification of one embodiment of this invention. The figure which shows the copper plate after performing an electrolytic peeling test using a hull cell apparatus. The figure which shows the method of measuring the resin adhesive strength of an adhesive strength test piece.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

Configuration of Lead Frame with Resin First, an outline of the lead frame with resin for LED elements according to the present embodiment will be described with reference to FIG. FIG. 1 is a sectional view showing a lead frame with resin according to the present embodiment.

  The lead frame 10 with resin shown in FIG. 1 is used for mounting the LED element 21 (FIG. 2). Such a lead frame 10 with resin is provided on the lead frame 15 on which the LED element 21 is placed and the sealing resin 24 (FIG. 2) for sealing the LED element 21 is provided, and on the lead frame 15. And an outer resin 23 surrounding the element 21.

  Among them, the lead frame 15 is provided on the main body 11 having a mounting surface 11a on which the LED element 21 is mounted, and Ag serving as a reflective layer for reflecting light from the LED element 21. And a plating layer 12.

  The main body 11 is made of a metal plate. Examples of the material of the metal plate constituting the main body 11 include copper, copper alloy, 42 alloy (Ni 41% Fe alloy), and the like. The thickness of the main body 11 is preferably 0.05 mm to 0.5 mm, although it depends on the configuration of the semiconductor device.

  In FIG. 1, the main body 11 includes a first portion 25 (die pad) on the LED element 21 side and a second portion 26 (lead portion) spaced from the first portion 25. An outer side resin 23 is filled between the first portion 25 and the second portion 26, and the first portion 25 and the second portion 26 are electrically insulated from each other. A first outer lead portion 27 is formed on the bottom surface of the first portion 25, and a second outer lead portion 28 is formed on the bottom surface of the second portion 26. The first outer lead portion 27 and the second outer lead portion 28 are exposed outward from the outer resin 23, respectively.

  The Ag plating layer 12 functions as a reflection layer for reflecting light from the LED element 21, and is located on the outermost surface side of the lead frame 15. This Ag plating layer 12 is made of an electrolytic plating layer of silver (Ag). The Ag plating layer 12 is formed to be extremely thin, and is specifically preferably 0.005 μm to 0.2 μm.

  The Ag plating layer 12 includes an outer resin corresponding portion 16 corresponding to the outer resin 23 and a sealing resin corresponding portion 17 corresponding to the sealing resin 24, and of these, the gloss of the sealing resin corresponding portion 17. The degree is higher than the glossiness of the outer resin corresponding part 16. That is, in the lead frame 10 with resin shown in FIG. 1, the Ag plating layer 12 is applied to substantially the entire periphery of the main body 11. And the part exposed to the upper surface side among the Ag plating layers 12 corresponds to the high gloss sealing resin corresponding part 17, the part covered with the outer resin 23 and the part exposed to the lower surface side (first The outer lead portion 27 and the second outer lead portion 28) correspond to the low gloss outer resin corresponding portion 16.

  The sealing resin corresponding portion 17 is provided with an Ag plating layer 12 on the main body portion 11 of the lead frame 15, and then the surface of the Ag plating layer is electrolytically peeled from the Ag plating layer 12 using the outer resin 23 as a mask. It was obtained by doing (after-mentioned).

  Further, a groove 18 for improving the adhesion between the lead frame 15 and the outer resin 23 is formed on the surface (upper surface) of the lead frame 15. The groove 18 is provided along the inner periphery of the outer resin 23 between the lead frame 15 and the outer resin 23.

  On the other hand, the outer resin 23 is integrated with the lead frame 15 and has a recess 23 a surrounding the LED element 21. Details of the outer resin 23 will be described later.

Configuration of Semiconductor Device Next, an embodiment of a semiconductor device provided with the resin-attached lead frame shown in FIG. 1 will be described with reference to FIGS. 2 and 3 are diagrams showing a semiconductor device (SON type) according to an embodiment of the present invention.

  As shown in FIGS. 2 and 3, the semiconductor device 20 includes a lead frame 15, an LED element 21 placed on the placement surface 11 a of the main body 11 of the lead frame 15, and the lead frame 15 and the LED element 21. And a bonding wire (conductive portion) 22 that electrically connects the two.

  Moreover, the outer side resin 23 which has the recessed part 23a is provided so that the LED element 21 may be surrounded. Furthermore, the LED element 21 and the bonding wire 22 are sealed with a translucent sealing resin 24. The sealing resin 24 is filled in the recess 23 a of the outer resin 23.

  Hereinafter, the respective constituent members constituting such a semiconductor device 20 will be sequentially described.

  As described above, the lead frame 15 is provided on the main body 11 having the mounting surface 11a on which the LED element 21 is mounted, and as a reflective layer for reflecting the light from the LED element 21. And a functioning Ag plating layer 12. Among these, the Ag plating layer 12 includes an outer resin corresponding portion 16 corresponding to the outer resin 23 and a sealing resin corresponding portion 17 corresponding to the sealing resin 24. And the glossiness of the sealing resin corresponding part 17 of the Ag plating layer 12 is higher than the glossiness of the outer resin corresponding part 16. Specifically, the glossiness of the outer resin corresponding portion 16 is preferably 0.6 to 0.9, and the glossiness of the sealing resin corresponding portion 17 is preferably 0.9 to 1.3.

  As described above, the sealing resin corresponding portion 17 is obtained by electrolytically peeling the surface of the Ag plating layer from the Ag plating layer 12 provided on the main body portion 11 of the lead frame 15 using the outer resin 23 as a mask. It is what was done. Further, the portion of the Ag plating layer 12 provided on the main body 11 that is not electrolytically peeled corresponds to the outer resin corresponding portion 16. Therefore, as shown in FIG. 4, the boundary between the outer resin corresponding portion 16 and the sealing resin corresponding portion 17 coincides with the boundary between the outer resin 23 and the sealing resin 24 on the upper surface of the main body 11.

  Since the structure of the lead frame 15 and the lead frame with resin 10 including the lead frame 15 and the outer resin 23 has already been described with reference to FIG. 1, detailed description thereof is omitted here. 2 and 3, the same parts as those shown in FIG. 1 are denoted by the same reference numerals.

  On the other hand, the LED element 21 selects an emission wavelength ranging from ultraviolet light to infrared light by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, AlInGaP, or InGaN as a light emitting layer. can do. As such an LED element 21, those conventionally used in general can be used.

  The LED element 21 is fixed on the mounting surface 11a of the main body 11 (strictly on the Ag plating layer 12) in the recess 23a of the outer resin 23 by solder or die bonding paste. When using a die bonding paste, it is possible to select a die bonding paste made of an epoxy resin or a silicone resin having light resistance.

  The bonding wire 22 is made of a material having good conductivity such as gold, for example. One end of the bonding wire 22 is connected to the terminal portion 21a of the LED element 21, and the other end is the second portion of the main body 11 of the lead frame 10 with resin. 26 is connected to the surface (on the sealing resin corresponding portion 17 of the Ag plating layer 12).

  The outer resin 23 is formed by, for example, injection molding or transfer molding of a thermoplastic resin on the lead frame 10 with resin. The shape of the outer resin 23 can be variously realized by designing a mold used for injection molding or transfer molding. For example, the overall shape of the outer resin 23 may be a rectangular parallelepiped as shown in FIG. 3, or it may be a cylindrical shape or a conical shape. The bottom surface of the recess 23a can be rectangular, circular, elliptical, polygonal, or the like. The cross-sectional shape of the side wall of the recess 23a may be constituted by a straight line as shown in FIG. 2, or may be constituted by a curve.

  As the thermoplastic resin used for the outer resin 23, it is particularly preferable to select a thermoplastic resin having excellent heat resistance, weather resistance and mechanical strength. As the kind of the thermoplastic resin, polyamide, polyphthalamide, polyphenylene sulfide, liquid crystal polymer, polyether sulfone, silicone, epoxy, polyetherimide, polybutylene terephthalate, or the like can be used. Furthermore, by adding any one of titanium dioxide, zirconium dioxide, potassium titanate, aluminum nitride, and boron nitride as a light reflecting agent in these resins, the light is emitted from the light emitting element on the bottom and side surfaces of the recess 23a. It is possible to increase the light reflectivity and increase the light extraction efficiency of the entire semiconductor device 20.

  As the sealing resin 24, it is desirable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the semiconductor device 20 in order to improve the light extraction efficiency. Therefore, it is possible to select an epoxy resin or a silicone resin as a resin that satisfies the characteristics of high heat resistance, weather resistance, and mechanical strength. In particular, when a high-brightness LED is used as the LED element 21, the sealing resin 24 is preferably made of a silicone resin having high weather resistance because the sealing resin 24 is exposed to strong light.

Manufacturing Method of LED Lead Frame Next, a manufacturing method of the lead frame with resin 10 shown in FIG. 1 will be described with reference to FIGS.

  First, as shown in FIG. 5A, a flat metal substrate 31 is prepared. As the metal substrate 31, a metal substrate made of copper, copper alloy, 42 alloy (Ni 41% Fe alloy) or the like can be used as described above. In addition, it is preferable to use what the metal substrate 31 performed the degreasing | defatting etc. to the both surfaces, and performed the washing process.

  Next, photosensitive resists 32a and 33a are applied to the entire front and back surfaces of the metal substrate 31, respectively, and dried (FIG. 5B). As the photosensitive resists 32a and 33a, conventionally known resists can be used.

  Subsequently, the metal substrate 31 is exposed through a photomask and developed to form etching resist layers 32 and 33 having desired openings 32b and 33b (FIG. 5C).

  Next, the etching resist layers 32 and 33 are used as an anticorrosion film, and the metal substrate 31 is etched with an etching solution (FIG. 5D). The corrosive liquid can be appropriately selected according to the material of the metal substrate 31 to be used. For example, when copper is used as the metal substrate 31, an aqueous ferric chloride solution is usually used and sprayed from both surfaces of the metal substrate 31. It can be performed by etching.

  Next, the etching resist layers 32 and 33 are peeled and removed. In this way, the main body 11 having the first portion 25 and the second portion 26 spaced from the first portion 25 and having the placement surface 11a on which the LED element 21 is placed is obtained ( FIG. 5 (e)). At this time, a groove 18 is formed on the surface (upper surface) of the main body 11 by half etching.

  Next, electrolytic plating is performed on the front and back surfaces of the main body part 11 to deposit metal (silver) on the main body part 11 to form an Ag plating layer 12 that functions as a reflective layer (FIG. 5F). ).

  During this time, specifically, as shown in FIG. 7, for example, an electrolytic degreasing process (S10), a pickling process (S11), a chemical polishing process (S12), a copper strike process (S13), a water washing process (S14), The Ag plating layer 12 is formed on the main body 11 by sequentially performing the degreasing step (S15), the cyan washing step (S16), and the silver plating step (S17). In this case, examples of the plating solution for electrolytic plating used in the silver plating step (S17) include a silver plating solution mainly composed of silver cyanide. In the actual process, a water washing process is appropriately added between the processes as necessary.

  In this way, a lead frame 15 having the main body 11 and the Ag plating layer 12 formed on the main body 11 is obtained (FIG. 5F). At this time, the Ag plating layer 12 has not yet been made highly glossy and remains low gloss as a whole.

  Next, the outer resin 23 is formed on the Ag plating layer 12 of the lead frame 15 (FIGS. 6A to 6E), and then the surface is electrolytically peeled from the Ag plating layer 12 using the outer resin 23 as a mask. By performing the above, the glossiness of the portion corresponding to the sealing resin 24 (the sealing resin corresponding portion 17) in the Ag plating layer 12 is increased (FIG. 6 (f) and FIG. 8). Hereinafter, each of these steps will be further described.

  First, by the above-described steps (FIGS. 5A to 5E), the main body 11 having the mounting surface 11a and the Ag plating layer 12 functioning as a reflective layer for reflecting the light from the LED element 21 are formed. A lead frame 15 is prepared (FIG. 6A).

  Subsequently, the lead frame 15 is mounted in a mold 35 of an injection molding machine or a transfer molding machine (not shown) (FIG. 6B). A space 35 a corresponding to the shape of the outer resin 23 is formed in the mold 35. At this time, in order to prevent the surface of the Ag plating layer 12 of the lead frame 15 from being damaged, it is preferable not to press the mold 35 against the Ag plating layer 12 strongly. For this reason, a slight gap 35 b may be formed between the mold 35 and the Ag plating layer 12.

  Next, a thermoplastic resin is poured into the mold 35 by a resin supply part (not shown) of an injection molding machine or a transfer molding machine, and then cured, whereby the outer resin 23 is formed on the Ag plating layer 12 of the lead frame 15. Is formed (FIG. 6C).

  Next, the lead frame 15 on which the outer resin 23 is formed is taken out from the mold 35. In this way, the outer resin 23 and the lead frame 15 are integrally formed (FIG. 6D).

  In this case, as described above, it is considered that the resin burr 23b is generated on the Ag plating layer 12 of the lead frame 15 due to the slight gap 35b formed between the mold 35 and the Ag plating layer 12. . For this reason, it is preferable to remove the resin burr 23b generated on the Ag plating layer 12 after the outer resin 23 is formed (FIG. 6E). Examples of the method for removing the resin burr 23b include a physical cleaning method using jet scrub and a resin peeling method using ultra-high pressure water washing. Among these, in particular, when the latter method is used, the surface of the Ag plating layer 12 may be roughened. However, as described below, the surface of the Ag plating layer 12 is electrolytically peeled to give a gloss. Since a process for increasing the degree is provided, there is no problem. In addition, when the resin burr | flash 23b does not arise on the Ag plating layer 12, it is not necessary to provide the process of removing such a resin burr | flash 23b.

Next, electrolytic peeling is performed on the surface of the Ag plating layer 12 using the outer resin 23 as a mask.
Thereby, the glossiness of the part (namely, sealing resin corresponding part 17) which is not covered with the outer side resin 23 among the upper surfaces of the Ag plating layer 12 is raised.

  During this time, the electrolytic stripping step can be performed as shown in FIG. That is, the lead frame 15 is immersed in a bath of a chemical solution (stripping solution) 39, and electrolysis is performed by the Ag plating layer 12 as the anode and the cathode 40 provided in the chemical solution 39. Note that an alkaline aqueous solution containing a surfactant can be used as the chemical solution 39.

At this time, electricity flows as shown by arrows in FIG. 8, and ions are diffused by the flow of electricity. In this case, the relatively sharp portion of the surface of the Ag plating layer 12 is more likely to be dissolved in the bath of the chemical liquid 39, and as a result, the surface of the Ag plating layer 12 is smoothed and the glossiness is increased.
For this reason, the glossiness of the part (sealing resin corresponding part 17) which is not covered with the outer side resin 23 can be selectively raised. On the other hand, the portion of the upper surface of the Ag plating layer 12 that is covered with the outer resin 23 (outer resin corresponding portion 16) is not affected by the chemical liquid 39, and therefore remains relatively low gloss. In this way, the Ag plating layer 12 has a relatively low gloss outer resin corresponding portion 16 corresponding to the outer resin 23 and a relatively high gloss sealing resin corresponding portion 17 corresponding to the sealing resin 24. Is formed (FIG. 6F).

  Through the steps described above, the lead frame with resin 10 (FIG. 1) including the lead frame 15 and the outer resin 23 provided on the lead frame 15 is obtained.

Method for Manufacturing Semiconductor Device Next, a method for manufacturing the semiconductor device 20 shown in FIGS. 2 and 3 will be described with reference to FIGS.

  First, by the steps described above (FIGS. 5A to 5F and 6A to 6F), the lead frame 10 with resin including the lead frame 15 and the outer resin 23 is manufactured (FIG. 5). 9 (a)).

  Next, the LED element 21 is mounted on the mounting surface 11 a of the main body 11 of the lead frame 15. In this case, the LED element 21 is mounted and fixed on the mounting surface 11a (on the Ag plating layer 12) of the main body 11 using a solder or a die bonding paste (die attachment process) (FIG. 9B). ).

  Next, the terminal portion 21a of the LED element 21 and the surface of the second portion 26 of the main body portion 11 are electrically connected to each other by the bonding wire 22 (wire bonding step) (FIG. 9C).

  Thereafter, the sealing resin 24 is filled into the recess 23a of the outer resin 23, and the LED element 21 and the bonding wire 22 are sealed with the sealing resin 24 (FIG. 9D).

  Next, the outer resin 23 between the LED elements 21 is diced to separate the lead frame 15 for each LED element 21 (FIG. 9E). At this time, the lead frame 15 is first placed and fixed on the dicing tape 37, and then the outer resin 23 between the LED elements 21 is cut in the vertical direction by a blade 38 made of, for example, a diamond grindstone.

  In this way, the semiconductor device 20 shown in FIGS. 2 and 3 can be obtained (FIG. 9F).

Operation and Effect of the Present Embodiment Next , the operation of the present embodiment having such a configuration will be described with reference to FIG.
FIG. 10 is a cross-sectional view showing a state where the semiconductor device according to the present embodiment is arranged on a wiring board.

  As shown in FIG. 10, the semiconductor device 20 according to the present embodiment is arranged on a wiring board 41. Such a wiring board 41 has a board body 42 and wiring terminal portions 43 and 44 formed on the board body 42. Among these, one wiring terminal portion 43 is connected to the first outer lead portion 27 via one connection solder portion 45. The other wiring terminal portion 44 is connected to the second outer lead portion 28 via the other connecting solder portion 46.

  In this way, when the semiconductor device 20 is arranged on the wiring substrate 41 and a current is passed between the pair of wiring terminal portions 43 and 44, the current is applied to the LED elements 21 on the mounting surface 11 a of the main body portion 11. In addition, the LED element 21 is lit.

  At this time, the light from the LED element 21 passes through the sealing resin 24 and is emitted from the surface of the sealing resin 24, or reflected from the side wall of the recess 23 a of the outer resin 23 from the surface of the sealing resin 24. Released. Alternatively, the light from the LED element 21 is emitted from the surface of the sealing resin 24 by being reflected by the surface of the sealing resin corresponding portion 17 of the Ag plating layer 12.

  In the present embodiment, in the Ag plating layer 12, the glossiness of the sealing resin corresponding portion 17 serving as the reflective layer is higher than the glossiness of the outer resin corresponding portion 16. Thereby, especially the light from the LED element 21 in the Ag plating layer 12 can be efficiently reflected.

  On the other hand, the outer resin-corresponding portion 16 corresponding to the outer resin 23 in the Ag plating layer 12 remains relatively high in roughness because the surface is not electrolytically stripped. Therefore, even if the glossiness of the sealing resin corresponding part 17 is increased, there is no possibility that the adhesion between the Ag plating layer 12 and the outer resin 23 is lowered.

  As described above, according to the present embodiment, since the glossiness of the sealing resin corresponding portion 17 of the Ag plating layer 12 is higher than the glossiness of the outer resin corresponding portion 16, the light of the LED element 21 in the semiconductor device 20 The reflection performance of the semiconductor device 20 can be improved, and the light emission efficiency of the semiconductor device 20 can be increased.

  Further, according to the present embodiment, the sealing resin corresponding portion 17 of the Ag plating layer 12 is Ag plated with the outer resin 23 as a mask with respect to the Ag plating layer 12 provided on the main body portion 11 of the lead frame 15. Since it is obtained by electrolytic peeling of the surface of the layer, no special process for selectively increasing the gloss only of the sealing resin corresponding part 17 is required in the electrolytic peeling process.

  Further, according to the present embodiment, the outer resin 23 has the recess 23a surrounding the LED element 21, and the sealing resin 24 is filled in the recess 23a of the outer resin 23. Adhesion with the resin 24 can be improved.

  Furthermore, according to the present embodiment, after the step of forming the outer resin 23, a step of removing the resin burr 23b generated on the Ag plating layer 12 of the lead frame 15 is provided. Even if the resin burr 23b is generated, it can be surely removed. Therefore, it is not necessary to strongly press the mold 35 for forming the outer resin 23 against the Ag plating layer 12, and it is possible to prevent the Ag plating layer 12 from being damaged.

  Furthermore, according to the present embodiment, after forming the Ag plating layer 12 on the main body 11 of the lead frame 15, the outer resin 23 is formed, and then the surface of the Ag plating layer is electrolytically peeled using the outer resin 23 as a mask. Thus, processing for increasing the glossiness of the sealing resin corresponding portion 17 is performed. Thereby, the glossiness of the sealing resin corresponding portion 17 of the Ag plating layer 12 can be increased while maintaining a state in which the adhesion strength between the outer resin corresponding portion 16 and the outer resin 23 of the Ag plating layer 12 is high.

  The above embodiment of the present invention will be described with reference to FIG. 4 which is a cross-sectional view of a semiconductor device. As shown in FIG. 4, on the upper surface of the main body 11, the boundary between the external resin corresponding part 16 and the sealing resin corresponding part 17 coincides with the boundary between the outer resin 23 and the sealing resin 24. In other words, the boundary position of the region of the Ag plating layer 12 where the surface is electrolytically peeled (sealing resin corresponding portion 17) and the region where the surface is not electrolytically peeled (outer resin corresponding portion 16) may coincide. It is a feature. When the plating surface is electrolytically peeled, as in the case of electropolishing, the projections and the like on the surface of the Ag plating layer are preferentially dissolved, so that the surface unevenness is reduced and smoothed, resulting in an increase in gloss (see FIG. 8). When the roughness of the Ag plating layer surface is evaluated along the cross section of the semiconductor device of the semiconductor device of the present invention, the arithmetic average roughness Ra of the Ag plating layer surface is the sealing resin corresponding portion 17 and the outer resin corresponding portion 16. The arithmetic average roughness of the sealing resin corresponding portion 17 is smaller than the arithmetic average roughness of the outer resin corresponding portion 16.

  In the lead frame with resin 10 and the semiconductor device 20 according to the present embodiment, the outer resin corresponding portion 16 and the LED element that are exposed by mechanically peeling the outer resin 23 and the sealing resin 24 from the Ag plating layer 12 are disclosed. It is also possible to measure the glossiness of the mounting portion 17.

Modification A modification of the semiconductor device according to the present embodiment will be described below with reference to FIG.
FIG. 11 is a cross-sectional view showing a modified example (SON type) of the semiconductor device. In FIG. 11, the same parts as those in the embodiment shown in FIG. 2 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The embodiment shown in FIG. 11 is different in that two lead portions (second portion 52 and third portion 53) are provided on both sides of the first portion (die pad) 51 of the main body portion 11. The other configurations are substantially the same as those of the embodiment shown in FIG.

  That is, in the semiconductor device 50 shown in FIG. 11, the main body 11 includes a first part (die pad) 51 on which the LED element 21 is placed and a periphery of the first part (die pad) 51. And a pair of lead portions (second portion 52 and third portion 53) provided at positions facing each other across 51.

  In FIG. 11, the LED element 21 has a pair of terminal portions 21 a, and the pair of terminal portions 21 a are connected to the second portion 52 and the third portion 53 via the bonding wires 22, respectively. Yes.

  Also in this case, as in the embodiment shown in FIG. 2, the Ag plating layer 12 includes an outer resin corresponding portion 16 corresponding to the outer resin 23 and a sealing resin corresponding portion 17 corresponding to the sealing resin 24. Thus, the glossiness of the sealing resin corresponding portion 17 is higher than the glossiness of the outer resin corresponding portion 16.

  Also in the semiconductor device 50 shown in FIG. 11, it is possible to obtain substantially the same functions and effects as those of the semiconductor device 20 (FIG. 2) described above.

  Next, the electrolytic stripping step of the method for manufacturing the resin-attached lead frame according to the present embodiment will be described with reference to FIG.

High-gloss Ag plating by electrolytic stripping using a Hull cell device

  First, a substantially rectangular copper plate 60 as shown in FIG. 12 was prepared, and an Ag plating layer was formed on the entire front and back surfaces of the copper plate 60. Subsequently, the copper plate 60 on which the Ag plating layer was formed was mounted on a hull cell device (manufactured by Yamamoto Metal Testing Co., Ltd., product number B-53), and an electrolytic peeling test was performed. In the Hull cell test, a planar electrode and a test metal plate are set in a chemical bath with an angle of about 50 degrees, and a voltage is applied between the flat electrode and the test metal plate to apply current to the test metal plate. This is a test method in which a density distribution is formed and the results of plating or electrolytic stripping at each current density are collectively evaluated with a single test metal plate. In the evaluation of the present invention, a copper plate 60 on which an Ag plating layer was formed by electrolytic plating was used as a test metal plate, and the effect of electrolytic peeling when the current density was changed was confirmed.

  In this case, as the chemical solution (peeling solution) to be filled in the chemical tank of the Hull cell device, a mixture of a surfactant (manufactured by Chemtech, product number AgE471) (80 g / L) and an alkaline solution (KOH) (30 g / L) is mixed. The liquid was used. The liquid temperature of the chemical solution (peeling solution) was 30 ° C., and the immersion time of the copper plate 60 in the chemical solution (peeling solution) was 27 seconds. For liquid stirring, air bubbling stirring was performed.

  In the figure, reference numeral 61 indicates a non-immersion area in the copper plate 60 that is not immersed in the chemical solution (peeling solution), and reference numeral 62 indicates an immersion area in the copper plate 60 that is immersed in the chemical solution (peeling solution). In the drawing, the hatched area schematically shows the area of the copper plate 60 that has become highly glossy.

  After the electrolytic peeling was completed, the copper plate 60 was pulled up from the tank of the hull cell device, and the glossiness at each location in the figure was measured (Table 1). In FIG. 12, P <b> 1 to P <b> 8 indicate measurement points in the immersion region 62, and these measurement points have the same liquid stirring strength (depth) and have different current densities. In FIG. 12, P0 indicates a measurement point in the non-immersed region 61 (that is, a place where electrolytic peeling is not performed) as a comparative example. In addition, as the glossiness, a reflection density value measured under optical conditions of 45 degrees on the light emitting side and 90 degrees on the light receiving side (perpendicular) with respect to the sample surface was used. The reflection density value is large when the surface of the Ag plating layer as a sample is smooth and the glossiness is high, and the reflection density value is small when the surface of the Ag plating layer is rough and the glossiness is low. For the actual measurement, a micro-surface spectral color difference meter (Nippon Denshoku Industries Co., Ltd. VSR300) was used. Further, fluorescent X-rays were used for measuring the plating thickness.

As a result, the measurement points (P1 to P8) where the electrolytic peeling was performed were all higher in gloss than the measurement points (P0) where the electrolytic peeling was not performed. That is, it was found that the gloss of the Ag plating layer can be increased by performing electrolytic peeling. Further, when the current density was lowered, the Ag plating layer could be made highly glossy while suppressing variations in glossiness in the surface of the copper plate 60. Specifically, stable in the range current density of the current density 0.1~3A / dm ² can increase the gloss of the Ag-plated layer, particularly high in the range of 0.5~2A / dm ² The effect of glossing was remarkable. Furthermore, it was found that the Ag plating layer becomes highly glossy as the liquid agitation is strong, and the Ag plating layer becomes extremely low glossy when the liquid agitation is weak. In addition, the thickness of the Ag plating layer before electrolytic stripping was 2.0 μm, and the thickness of the remaining Ag plating layer after completion of electrolytic stripping on the surface was 1.0 to 1.2 μm at positions P4 to P7.

  On the other hand, with respect to the above test results, as an actual LED member, the portion corresponding to the outer resin 23 (outer resin corresponding portion 16) has a glossiness of 0.6 to 0.9, and the LED element mounting portion. The glossiness of (encapsulating resin corresponding part 17) is preferably 0.9 to 1.3.

  Next, a test piece (adhesion strength test piece) obtained by increasing the gloss of the Ag plating layer under the conditions of high gloss electrolytic peeling obtained in the test shown in Table 1 above was prepared. The adhesion strength of was evaluated. The results are shown in Table 2.

Sample substrate: EFTEC-64T (25 × 35 × 0.2mm) manufactured by Furukawa Electric Co., Ltd.
Ag plating layer: After the Ag plating layer is formed by electrolytic plating, glossiness is imparted by electrolytic peeling. Glossiness: measured with a micro-spectral color difference meter (Nippon Denshoku Industries Co., Ltd. VSR300) Adhesive strength: measurement method of FIG. Measured with resin molding: frustum with bottom diameter of 3mm and height of 3mm
Resin used: Nitto Denko NT-800 series
Molding conditions: Transfer mold 150 ° C., 180 seconds
Cure 150 ° C, 2 hours

As the above-mentioned adhesion strength test piece, after forming an Ag plating layer by electrolytic plating on a copper alloy plate for a lead frame, and 1.0, 1.5, 2.0 ( A total of four samples were prepared including a sample whose surface was subjected to electrolytic peeling treatment at a current density of A / dm ² ). When the glossiness of each adhesion strength test piece was measured, it was 0.6, 1.3, 1.0, and 0.9, respectively (see Table 2).

Measurement of resin adhesion strength with adhesion strength test piece

  Next, the resin adhesion strength of the four adhesion strength test pieces was measured (see FIG. 13). In this case, a resin molding is formed on the surface of the Ag plating layer of each adhesion strength test piece, and then the adhesion strength test piece and the resin molding are drawn in a direction parallel to the surface of the Ag plating layer (that is, in the horizontal direction). The peel strength was applied, and the strength when the joint between the adhesion strength test piece and the resin molding was broken was measured to obtain the adhesion strength. The resin molding has a truncated cone shape with a bottom diameter of 3 mm and a height of 3 mm. The resin used (for example, Nitto Denko NT-800 series) is transfer molded at 180 ° C. for 180 seconds, and further 150 ° C. For 2 hours.

As shown in Table 2, the resin adhesion strengths obtained for the adhesion strength test pieces having glossiness of 0.6, 1.3, 1.0, and 0.9 are 0.5, 0.2, and 0, respectively. .25, 0.4 (kN / cm ² ), and the glossiness and the resin adhesion strength were in inverse proportion. That is, it was found that the lower the gloss of the Ag plating layer, the higher the resin adhesion strength.

  In the method of manufacturing a lead frame with resin for LED of the present invention, after forming an Ag plating layer on the surface of the lead frame body, an outer resin is immediately formed, and then the surface of the Ag plating layer is subjected to a treatment for increasing the glossiness by electrolytic peeling. ing. As a result, it is possible to increase the glossiness of the sealing resin corresponding portion of the Ag plating layer while maintaining a high adhesion strength between the outer resin corresponding portion of the Ag plating layer and the outer resin.

  In the present application, an Ag plating layer is used as a reflective layer for reflecting light from the LED element on the surface of the main body portion on which the LED element is mounted. However, instead of the Ag plating layer, an Ag alloy such as Ag-Au or Ag-Sn is used. The same effect can be achieved even if layers are used.

DESCRIPTION OF SYMBOLS 10 Lead frame with resin 11 Main-body part 11a Mounting surface 12 Ag plating layer 15 Lead frame 16 Outer resin corresponding part 17 Sealing resin corresponding part 20 Semiconductor device 21 LED element 22 Bonding wire (conductive part)
23 outer resin 23a recess 23b resin burr 24 sealing resin 25 first part 26 second part 27 first outer lead part 28 second outer lead part

Claims (2)

In lead frames with resin for LED elements,
A lead frame on which an LED element is placed and a sealing resin for sealing the LED element is provided;
An outer resin provided on the lead frame and surrounding the LED element;
The lead frame is
A main body having a mounting surface for mounting the LED element;
An Ag plating layer that is provided on the main body and functions as a reflective layer for reflecting light from the LED element;
Of the upper surface of the Ag plating layer, all the portions not covered with the outer resin are higher in gloss than the portions covered with the outer resin, and are covered with the portion not covered with the outer resin and the outer resin. The resin-attached lead frame is characterized in that the portion having the same Ag plating layer comprises different portions. In semiconductor devices,
A lead frame including a main body having a mounting surface on which the LED element is mounted; and an Ag plating layer provided on the main body and functioning as a reflective layer for reflecting light from the LED element;
LED elements mounted on the mounting surface of the main body of the lead frame;
A conductive portion that electrically connects the lead frame and the LED element;
An outer resin provided on the lead frame and surrounding the LED element;
A sealing resin for sealing the LED element and the conductive portion;
Of the upper surface of the Ag plating layer, all the portions not covered with the outer resin are higher in gloss than the portions covered with the outer resin, and are covered with the portion not covered with the outer resin and the outer resin. The semiconductor device is characterized by comprising different portions of the same Ag plating layer.

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