JP6167526B2 - Method for manufacturing vapor deposition mask and method for manufacturing organic semiconductor element - Google Patents

Description

  The present invention relates to a method for manufacturing a vapor deposition mask and a method for manufacturing an organic semiconductor element.

  Conventionally, in the manufacture of an organic EL element, the organic layer or cathode electrode of the organic EL element is formed of, for example, a metal in which a large number of minute slits are arranged in parallel at minute intervals in a region to be deposited. A vapor deposition mask was used. When using this vapor deposition mask, the vapor deposition mask is placed on the surface of the substrate to be vapor-deposited and held by a magnet from the back side, but the rigidity of the slit is extremely small, so when holding the vapor deposition mask on the substrate surface In this case, the slits are easily distorted, which has been an obstacle to the increase in the size of products with high definition or a long slit length.

  Various studies have been made on the vapor deposition mask for preventing the distortion of the slit. For example, Patent Document 1 covers a base plate that also serves as a first metal mask having a plurality of openings, and covers the openings. There has been proposed a vapor deposition mask having a second metal mask having a large number of fine slits in the region and a mask tension holding means for positioning the second metal mask on the base plate in a state where the second metal mask is pulled in the longitudinal direction of the slit. That is, a vapor deposition mask in which two kinds of metal masks are combined has been proposed. According to this vapor deposition mask, it is said that the slit accuracy can be ensured without causing distortion in the slit.

  Recently, with the increase in size of products using organic EL elements or the increase in substrate size, there is an increasing demand for deposition masks, which are used in the manufacture of deposition masks made of metal. Metal plates are also getting bigger. However, with the current metal processing technology, it is difficult to accurately form a slit in a large metal plate, and even if the slit portion can be prevented from being distorted by the method proposed in Patent Document 1 above, Cannot cope with high definition of slits. Further, in the case of a vapor deposition mask made of only metal, the mass increases with an increase in size, and the total mass including the frame also increases, resulting in trouble in handling.

JP 2003-332057 A

  The present invention has been made in view of such circumstances, and provides a method for manufacturing a vapor deposition mask that can satisfy both high definition and light weight even when the size is increased, and the production of the vapor deposition mask. It is a main object to provide a resin layer with a metal mask used in the method and a method for producing an organic semiconductor element capable of producing an organic semiconductor with high accuracy.

In order to solve the above problems, the present invention provides a deposition mask in which a metal mask in which slits are formed and a resin mask in which openings corresponding to patterns to be deposited are formed at positions overlapping the slits are laminated. A method of preparing a resin layer with a metal mask provided with a metal mask having slits formed on one surface of the resin layer; and irradiating the resin layer with laser light from the metal mask side. Forming an opening corresponding to a pattern to be formed by vapor deposition, and in the step of forming the opening, the other surface of the resin layer in the resin layer with the metal mask is exposed by the slit. in a state contacting the liquid to the one surface of the resin layer in the metal mask with a resin layer, and wherein the laser beam is irradiated from the metal mask side That.

  In the above invention, a liquid having a viscosity of 0.1 mPa · s to 10 mPa · s may be used as the liquid.

  Moreover, this invention for solving the said subject is a manufacturing method of an organic-semiconductor element, Comprising: The vapor deposition mask manufactured by the manufacturing method which has the said characteristic is used.

  According to the method for manufacturing a vapor deposition mask of the present invention, a vapor deposition mask that can satisfy both high definition and light weight even when the size is increased can be manufactured with high yield. Moreover, according to the manufacturing method of the organic semiconductor element of this invention, an organic semiconductor element can be manufactured with sufficient precision.

It is process drawing for demonstrating an example of the manufacturing method of the vapor deposition mask of this invention. It is a schematic sectional drawing which shows an example of the process of forming an opening part. It is process drawing for demonstrating an example of the formation method of the resin layer with a metal mask. It is the elements on larger scale near the opening which shows a burr and a dregs. (A) is the front view seen from the metal mask side of the vapor deposition mask manufactured with the manufacturing method of this invention. (B) is a schematic sectional drawing of the vapor deposition mask manufactured by the manufacturing method of this invention. (A), (b) is the front view seen from the metal mask side of the vapor deposition mask manufactured with the manufacturing method of this invention. It is a schematic sectional drawing which shows the relationship between a shadow and the thickness of a metal mask. It is a partial schematic sectional drawing which shows the relationship between the slit of a metal mask, and the opening part of a resin mask. It is a partial schematic sectional drawing which shows the relationship between the slit of a metal mask, and the opening part of a resin mask.

  Below, the manufacturing method of the vapor deposition mask of this invention is demonstrated concretely using FIG. The method for producing a vapor deposition mask according to the present invention is a method for producing a vapor deposition mask in which a metal mask having slits formed thereon and a resin mask having openings corresponding to patterns to be vapor deposited at positions overlapping the slits are laminated. And a step of preparing a resin layer with a metal mask provided with a metal mask having slits formed on one surface of the resin layer, and irradiating a laser beam from the metal mask side to deposit on the resin layer Forming an opening corresponding to the pattern to be formed. Hereinafter, each process in the manufacturing method of the vapor deposition mask of this invention is demonstrated. In the following description, first, the process will be mainly described, and the material and the like will be described together with the description of the vapor deposition mask manufactured by the manufacturing method.

  FIG. 1 is a process diagram for explaining an embodiment of a method for producing a vapor deposition mask of the present invention. Note that (a) to (d) are all cross-sectional views.

(Process for preparing resin layer with metal mask)
This step is a step of preparing a resin layer 60 with a metal mask provided with a metal mask 10 having slits 15 formed on one surface of the resin layer 20, as shown in FIG. As the resin layer 60 with the metal mask, a metal mask 10 in which the slits 15 are formed in advance and the resin layer 20 may be bonded together by a conventionally known method, for example, using an adhesive or the like. After forming the resin layer 20 on the plate, the resin layer 60 with a metal mask obtained by forming the slit 15 penetrating only the metal plate may be used.

  3A to 3C are schematic cross-sectional views showing an example of a method for forming the resin layer 60 with a metal mask. After forming the resin layer 20 on the metal plate 11, slits 15 are formed in the metal plate 11. It is an example of the method of forming. As a method of forming the resin layer 20 on the metal plate 11, a coating liquid in which a resin as a material of the resin layer 20 is dispersed or dissolved in an appropriate solvent is applied and dried by a conventionally known coating method. The method etc. can be mentioned. Further, the resin layer 20 may be bonded onto the metal plate 11 via an adhesive layer or the like. In this method, as shown in FIG. 3A, after a resin layer 20 is provided on the metal plate 11, a resist material 62 is applied to the surface of the metal plate 11, and a mask 63 on which a slit pattern is formed is formed. The resist material is used for masking, exposing and developing. Thus, a resist pattern 64 is formed on the surface of the metal plate 11 as shown in FIG. Then, using the resist pattern 64 as an etching resistant mask, only the metal plate 11 is etched, and the resist pattern is washed and removed after the etching is completed. Thereby, as shown in FIG.3 (c), the metal mask 10 (resin layer 60 with a metal mask) by which the slit 15 was formed only in the metal plate 11 can be obtained.

  The resist material masking method is not particularly limited, and as shown in FIG. 3A, the resist material 62 may be applied only to the side of the metal plate 11 that does not contact the resin layer 20, and the resin layer 20 and the metal A resist material 62 may be applied to each surface of the plate 11 (not shown). Alternatively, a dry film method in which a dry film resist is bonded to the surface of the metal plate 11 that is not in contact with the resin layer 20 or the respective surfaces of the resin layer 20 and the metal plate 11 can also be used. The coating method of the resist material 62 is not particularly limited. When the resist material 62 is coated only on the side of the metal plate 11 that is not in contact with the resin layer 20, a spin coating method or a spray coating method can be used. . On the other hand, when the laminate of the resin layer 20 and the metal plate 11 is a long sheet, it is preferable to use a dip coating method or the like that can apply a resist material by a roll-to-roll method. . In the dip coating method, the resist material 62 is applied to the respective surfaces of the resin layer 20 and the metal plate 11.

  It is preferable to use a resist material having good processability and desired resolution. Further, the etching material used in the etching process is not particularly limited, and a known etching material may be appropriately selected.

  The etching method for the metal plate 11 is not particularly limited. For example, a spray etching method in which an etching material is sprayed from a spray nozzle at a predetermined spray pressure, an immersion etching method or an etching material is dropped into an etching solution filled with the etching material. A wet etching method such as a spin etching method or a dry etching method using gas, plasma, or the like can be used.

(Process to fix the resin layer with metal mask to the frame)
As shown in FIG. 1B, the manufacturing method of the present invention may include a step of fixing the resin layer 60 with a metal mask to the frame 40 in a step before forming the opening 25. This step is an optional step in the method for manufacturing a vapor deposition mask of the present invention, but the resin layer 60 with a metal mask is preliminarily formed at a stage before the laser beam is irradiated to form the opening 25 in the resin layer 20. By fixing to the frame, it is possible to eliminate an attachment error that occurs when the deposition mask 100 of the present invention is fixed to the frame. In the conventionally known method, since the metal mask whose opening is determined is fixed while being pulled with respect to the frame, the accuracy of the opening position coordinate is lowered. In FIG. 1B, the resin layer 60 with a metal mask is fixed on the side surface of the frame 40. However, as shown in FIG. It can also be fixed to the resin layer 60. The frame and the resin layer 60 with the metal mask can be fixed by, for example, welding.

(Step of forming the opening)
In this step, after the resin layer 60 with the metal mask is placed on the processing stage, an opening corresponding to a pattern in which the laser beam is irradiated from the metal mask 10 side through the slit 15 and deposited on the position overlapping the slit 15. 25 is a step of forming 25 on the resin layer 20. And after forming the opening part 25 in the resin layer 20, by removing the resin layer with a metal mask containing the resin layer in which the said opening part 25 was formed, as shown in FIG.1 (d), A vapor deposition mask is obtained in which the metal mask 10 and the resin mask 21 in which openings corresponding to the pattern to be deposited are formed are stacked at a position overlapping the slit 15 of the metal mask 10.

  Here, in the manufacturing method of the present invention, in the step of forming the opening 25, as shown in FIG. 1C, the other surface of the resin layer 20 in the resin layer 60 with a metal mask, in other words, the resin layer 20 is formed. In a state where the surface that is not in contact with the metal mask 10 (hereinafter simply referred to as the other surface of the resin layer 20) is in contact with the liquid, the resin layer 20 is irradiated with laser light, and the resin layer 20 is opened. 25 is formed.

  In this step, with the resin layer 60 with a metal mask placed on the processing stage, a laser beam is irradiated from the metal mask 10 side, and the resin layer 20 is decomposed by this laser beam to form the opening 25. Is done.

  When the resin layer 60 with a metal mask is placed on the processing stage, it is difficult to sufficiently adhere the processing stage and the resin layer 60 with the metal mask, and between the processing stage and the resin layer 60 with the metal mask. There will be a gap. The gap that exists between the processing stage and the resin layer 60 with the metal mask becomes a factor that causes focus blur when the resin layer 20 is irradiated with laser light to form the opening 25. This focus blur affects the decomposition of the resin layer 20 that forms the opening 25. If the resin layer is not sufficiently decomposed by the focus blur, burrs may remain on the edge of the opening 25. In some cases, the resin layer that could not be decomposed remains as residue. In order to improve the adhesion between the processing stage and the resin layer 60 with a metal mask, various adsorption methods such as electrostatic adsorption, vacuum adsorption, and magnet adsorption can be used. However, in these adsorption methods, if the smoothness of the resin layer with a metal mask is reduced, or the irradiation part is damaged by irradiating laser light, or partially (microscopically) the resin A portion not completely adhered to the layer is generated, which is not preferable.

  Burrs and debris generated due to insufficient decomposition of the resin layer 20 protrude toward the inner peripheral side of the opening 25 as shown in FIG. 4A and / or FIG. As shown in b), it adheres to the surface of the resin mask 21 on the side not in contact with the metal mask 10. When burrs and debris are generated as shown in FIG. 4A, burrs and debris are released from the vapor deposition source when the vapor deposition pattern is formed on the vapor deposition object using the produced vapor deposition mask. This causes a so-called pattern defect in which the deposited material is blocked and an insufficient pattern is formed on the deposition target. In addition, in order to perform pattern deposition with high accuracy on a vapor deposition object using a vapor deposition mask, it is necessary that the vapor deposition mask and the vapor deposition object are in close contact with each other, but FIG. As shown, when burrs and debris are generated, poor adhesion occurs between the vapor deposition mask and the vapor deposition object, which causes pixel blur and the like.

  In the present invention, since the laser beam is irradiated with the other surface of the resin layer 20 in contact with the liquid, the processing stage and the other surface of the resin layer 20 are indirectly adhered to each other via the liquid. It can be in a state of Thereby, it is possible to prevent the focus blur, and as a result, it is possible to prevent the occurrence of burrs and debris.

  Further, in the manufacturing method of the present invention, since the laser beam is irradiated with the other surface of the resin layer 20 in contact with the liquid, the resin layer 20 can be soaked during the laser beam irradiation. The deformation of the resin layer 20 due to heat can be prevented. Specifically, when the opening 25 is formed, the resin layer 20 located in the portion irradiated with the laser light becomes a higher temperature portion than the resin layer 20 located in the portion not irradiated with the laser light, and the resin layer 20 The resin layer 20 may be distorted or deformed due to the partial temperature change, but by bringing the other surface of the resin layer 20 into contact with the liquid, it is possible to equalize the temperature of the entire resin layer. Can do. In addition, when a resin layer deform | transforms by irradiation of a laser beam, the dimensional accuracy of the opening part 25 formed in the said resin layer 20 will fall.

  The method for contacting the other surface of the resin layer 20 and the liquid is not particularly limited, but as shown in FIG. 1C, the gap between the processing stage and the other surface of the resin layer 20 is filled with the liquid. The method of making it contact can be mentioned. In the method shown in FIG. 1C, only the other surface of the resin layer 20 is in contact with the liquid. However, as shown in FIG. It is also possible to contact both sides of the layer with a liquid. According to the embodiment shown in FIG. 2B, further improvement in soaking is expected. Although not shown, in the configuration shown in FIG. 2A, both surfaces of the resin layer can be brought into contact with the liquid.

  Further, according to the manufacturing method of the present invention in which the other surface of the resin layer 20 is in contact with the liquid, even when impurities or the like are generated when the opening 25 is formed in the resin layer 20, the liquid At the same time, the impurities can be removed.

  Further, as described above, when the resin layer 60 with the metal mask is fixed to the frame 40 at the stage before the opening 25 is formed in order to improve the alignment accuracy between the vapor deposition mask 100 and the frame. Depending on the manner of fixing the frame 40 and the resin layer 60 with the metal mask, a larger gap will be formed between the processing stage and the other surface of the resin layer 20. By interposing the liquid between the other surface, the gap can be filled. Regardless of the size of the gap between the processing stage and the other surface of the resin layer 20, and in the resin layer 60 with a metal mask. Focus blur can be prevented regardless of the surface state of the surface of the resin layer 20 facing the processing stage. Therefore, the manufacturing method of the present invention is particularly suitable when the opening 25 is formed in a state where the resin layer 60 with the metal mask is fixed to the frame 40.

  Although there is no limitation in particular about the liquid which contacts the other surface of the resin layer 20, it is required that it is a liquid which does not dissolve the resin layer 20 at least. In the production method of the present invention, a liquid having a viscosity of 0.1 mPa · s or more and 10 mPa · s or less can be suitably used as the liquid that contacts the other surface of the resin layer 20. By using the liquid having the viscosity, even if there is microscopic unevenness or waviness on the surface of the other surface of the resin layer 20, the liquid can be brought into contact with the microscopic unevenness or waviness. it can. In other words, the surface of the other surface of the resin layer 20 can be covered with a liquid without a gap. As an example of the liquid having the above viscosity, water can be used, but a liquid other than water having a viscosity within the above range can also be used. Moreover, the viscosity of the liquid demonstrated here is a viscosity measured by Physica MCR301 by Anton Paar.

  The laser device used in this step is not particularly limited, and a conventionally known laser device may be used. In addition, in the specification of the present application, a vapor deposition pattern means a pattern to be produced using the vapor deposition mask. For example, when the vapor deposition mask is used to form an organic layer of an organic EL element, the organic The shape of the layer.

  Further, when the opening 25 is formed in the resin layer 20 by irradiating laser light from the metal mask 10 side of the resin layer 60 with the metal mask, a pattern to be formed by vapor deposition, that is, a pattern corresponding to the opening 25 to be formed is previously set. A provided reference plate may be prepared, and laser irradiation corresponding to the pattern of the reference plate may be performed from the metal mask 10 side in a state where the reference plate is bonded to the other surface of the resin layer 20. According to this method, the opening 25 can be formed in the resin layer 20 in a so-called facing-off state in which laser irradiation is performed while viewing the pattern of the reference plate, and a high-definition opening with extremely high dimensional accuracy of the opening. The resin mask 21 having the portion 25 can be formed. Moreover, since this method forms the opening part 25 in the state fixed to the flame | frame, it can be set as the vapor deposition mask excellent in not only a dimensional accuracy but a positional accuracy.

  In the case of using the above method, it is necessary that the pattern of the reference plate can be recognized by the laser irradiation apparatus or the like through the resin layer 20 from the metal mask 10 side. When the resin layer 20 has a certain thickness, it is necessary to use a material having transparency. However, as described later, a preferable thickness in consideration of the influence of the shadow, for example, a thickness of about 3 μm to 25 μm In this case, the reference plate pattern can be recognized even with a colored resin layer.

  The method for bonding the other surface of the resin layer 20 to the reference plate is not particularly limited. For example, when the metal mask 10 of the resin layer 60 with the metal mask is a magnetic body, a magnet is provided behind the reference plate. Etc. and the metal mask 10 and the reference plate are attracted to each other, whereby the resin layer 60 with the metal mask and the reference plate can be bonded together. In addition, it can also be bonded using an electrostatic adsorption method or the like. Examples of the reference plate include a TFT substrate having a predetermined pattern and a photomask.

  According to the manufacturing method of the present invention described above, a vapor deposition mask that can satisfy both high definition and light weight even when the size is increased can be manufactured with high yield.

  Specifically, in the manufacturing method of the present invention, the vapor deposition mask 100 in which the resin mask 21 and the metal mask 10 are finally laminated is manufactured. Here, when comparing the mass of the vapor deposition mask 100 manufactured by the manufacturing method of the present invention with the mass of the vapor deposition mask composed of only a conventionally known metal, assuming that the thickness of the entire vapor deposition mask is the same. Thus, the mass of the vapor deposition mask 100 of the present invention is reduced by the amount of replacing the metal material of the conventionally known vapor deposition mask with a resin material. In addition, in order to reduce the weight by using a vapor deposition mask made of only metal, it is necessary to reduce the thickness of the vapor deposition mask. However, if the vapor deposition mask is thin, When the size is increased, the vapor deposition mask may be distorted or the durability may be reduced. On the other hand, according to the deposition mask manufactured by the manufacturing method of the present invention, even when the thickness of the entire deposition mask is increased in order to satisfy the distortion and durability when it is enlarged, the resin Due to the presence of the mask 21, it is possible to reduce the weight as compared with a vapor deposition mask formed of only metal.

  Further, in the manufacturing method of the present invention, as described above, the opening 25 is formed by irradiating the resin layer 20 capable of forming a high-definition opening with laser light as compared with the metal material. Therefore, the high-definition opening 25 can be obtained. Further, since the opening 25 is formed in a state where the other surface of the resin layer 20 is in contact with the liquid, the high-definition opening 25 can be formed without generation of burrs or debris. Thereby, when forming a pattern in a vapor deposition target object using the vapor deposition mask 100 manufactured with the manufacturing method of this invention, a high-definition pattern can be formed in a vapor deposition target object with a sufficient yield.

(Slimming process)
Moreover, in the manufacturing method of this invention, you may perform a slimming process between the processes demonstrated above, or a process. The said process is an arbitrary process in the manufacturing method of this invention, and is a process of optimizing the thickness of the metal mask 10 and the thickness of the resin mask 21. FIG. A preferable thickness of the metal mask 10 or the resin mask 21 may be set as appropriate within a preferable range described later, and a detailed description thereof is omitted here.

  For example, when a resin layer 60 with a metal mask having a certain thickness is used, excellent durability and transportability are imparted when the resin layer 60 with a metal mask is transported during the manufacturing process. Can do. On the other hand, in order to prevent the occurrence of shadows and the like, the thickness of the vapor deposition mask 100 obtained by the production method of the present invention is preferably an optimum thickness. The slimming process is a useful process for optimizing the thickness of the vapor deposition mask 100 while satisfying durability and transportability during or after the manufacturing process.

  The slimming of the metal mask 10, that is, the optimization of the thickness of the metal mask is performed between the process described above or after the process, with the surface of the metal mask 10 on the side not in contact with the resin layer 20 or the resin mask 21. This can be realized by etching using an etchable etchant.

  The same applies to the slimming of the resin layer 20 to be the resin mask 21 and the resin mask 21, that is, the optimization of the thickness of the resin layer 20 and the resin mask 21. Etching the surface of the layer 20 that is not in contact with the metal mask 10 or the surface of the resin mask 21 that is not in contact with the metal mask 10 with an etching material that can etch the material of the resin layer 20 and the resin mask 21. It is feasible. Moreover, after forming the vapor deposition mask 100, the thickness of both the metal mask 10 and the resin mask 21 can be optimized by etching.

  In the slimming process, the etching material for etching the resin layer 20 or the resin mask 21 may be appropriately set according to the resin material of the resin layer 20 or the resin mask 21, and is not particularly limited. For example, when a polyimide resin is used as the resin material for the resin layer 20 or the resin mask 21, an alkaline aqueous solution in which sodium hydroxide or potassium hydroxide is dissolved, hydrazine, or the like can be used as the etching material. Commercially available etching materials can be used as they are, and TPE3000 manufactured by Toray Engineering Co., Ltd. can be used as the polyimide resin etching material.

(Vapor deposition mask manufactured by the manufacturing method of the present invention)
FIG. 5A is a front view of the vapor deposition mask manufactured by the manufacturing method of the present invention as viewed from the metal mask side, and FIG. 5B is an enlarged cross section of the vapor deposition mask 100 manufactured by the manufacturing method of the present invention. FIG. In this figure, in order to emphasize the slit provided with the metal mask and the opening provided in the vapor deposition mask, the ratio to the whole is greatly described.

  As shown in FIG. 5, the vapor deposition mask 100 manufactured by the manufacturing method of the present invention includes the metal mask 10 provided with the slits 15 and the surface of the metal mask 10 (in the case shown in FIG. 5B). The resin mask 21 is stacked on the lower surface of the metal mask 10 and the openings 25 corresponding to the pattern to be deposited are arranged in a plurality of rows vertically and horizontally. Each will be described in detail below.

(Resin mask)
The resin mask 21 is made of resin, and, as shown in FIG. 5, a plurality of openings 25 corresponding to a pattern to be deposited and formed are arranged in rows and columns at positions overlapping with the slits 15. In the present invention, an example in which the openings are arranged in a plurality of rows in the vertical and horizontal directions is described. However, the opening 25 may be provided at a position overlapping with the slit, and the slit 15 is provided in the vertical direction. Alternatively, when only one row is arranged in the horizontal direction, the opening 25 may be provided at a position overlapping the slit 15 of the one row.

  Conventionally known resin materials can be appropriately selected and used for the resin mask 21, and the material is not particularly limited. However, the high-definition opening 25 can be formed by laser processing or the like, and the heat and time It is preferable to use a lightweight material having a small dimensional change rate and moisture absorption rate. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene- Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, and ionomer resin. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material having both conditions is particularly preferable. . Therefore, since the resin layer 20 in FIG. 1 will be the resin mask 21 in the future, it is preferable to use, for example, a resin layer made of the preferred resin material exemplified above.

  The thickness of the resin mask 21 is not particularly limited, but when vapor deposition is performed using the vapor deposition mask of the present invention, a vapor deposition portion that is insufficient for the pattern to be vapor deposited, that is, a film thinner than the target vapor deposition film thickness. The resin mask 21 is preferably as thin as possible in order to prevent a thickened deposition portion, so-called shadow, from occurring. However, when the thickness of the resin mask 21 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation and the like increases. On the other hand, if it exceeds 25 μm, shadows may occur. Considering this point, the thickness of the resin mask 21 is preferably 3 μm or more and 25 μm or less. By setting the thickness of the resin mask 21 within this range, it is possible to reduce the risk of defects such as pinholes and deformation, and to effectively prevent the occurrence of shadows. In particular, by setting the thickness of the resin mask 21 to 3 μm or more and 10 μm or less, more preferably 4 μm or more and 8 μm or less, it is possible to more effectively prevent the influence of shadows when forming a high-definition pattern exceeding 300 ppi. . Therefore, since the resin layer 20 in FIG. 1 will become the resin mask 21 in the future, it is preferable to have the above thickness. The resin layer 20 may be bonded to the metal mask 10 via an adhesive layer or an adhesive layer, and the resin layer 20 and the metal plate may be directly bonded. When the resin layer and the metal mask 10 are bonded via a layer or an adhesive layer, the total of the resin layer 20 and the pressure-sensitive adhesive layer or the resin layer 20 and the adhesive layer is taken into consideration in consideration of the shadow. It is preferable to set the thickness within the range of 3 μm or more and 25 μm or less.

  There is no particular limitation on the shape and size of the opening 25, and any shape and size corresponding to the pattern to be deposited may be used. Moreover, as shown to Fig.5 (a), the pitch P1 of the horizontal direction of the adjacent opening part 25 and the pitch P2 of the vertical direction can also be set suitably according to the pattern produced by vapor deposition. Therefore, when the openings are formed by laser irradiation in FIG. 1, the pitches P1 and P2 may be appropriately designed.

  There are no particular limitations on the positions where the openings 25 are provided and the number of openings 25, and one opening may be provided at a position overlapping the slit 15, or a plurality of openings 25 may be provided in the vertical direction or the horizontal direction. For example, as shown in FIG. 6A, when the slit extends in the vertical direction, two or more openings 25 overlapping the slit 15 may be provided in the horizontal direction.

  There is no particular limitation on the cross-sectional shape of the opening 25, and the end faces facing each other of the resin mask forming the opening 25 may be substantially parallel to each other. However, as shown in FIG. It is preferable that the cross-sectional shape has a shape that expands toward the vapor deposition source. In other words, it is preferable to have a tapered surface that expands toward the metal mask 10 side. By setting the cross-sectional shape of the opening 25 to the configuration, it is possible to prevent a shadow from being generated in the pattern to be deposited when vapor deposition is performed using the vapor deposition mask of the present invention. The taper angle θ can be set as appropriate in consideration of the thickness of the resin mask 21 and the like, but the angle connecting the tip of the upper base in the opening of the resin mask is 25 as well as the tip of the bottom of the resin mask. It is preferable that the angle is in the range of ° to 65 °. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable. Further, in FIG. 1, the end face 25 a forming the opening 25 has a linear shape, but is not limited to this, and has an outwardly convex curved shape, that is, the opening 25. The overall shape may be a bowl shape. The opening 25 having such a cross-sectional shape is subjected to multi-stage laser irradiation that appropriately adjusts the laser irradiation position and laser irradiation energy or changes the irradiation position in stages when the opening 25 is formed. It can be formed by doing.

  In the present invention, since the resin mask 21 is used as the structure of the vapor deposition mask 100, when the vapor deposition is performed using the vapor deposition mask 100, very high heat is applied to the opening 25 of the resin mask 21. Further, gas may be generated from the end face 25a (see FIG. 5) forming the opening 25 of the resin mask 21, and there is a possibility that the degree of vacuum in the vapor deposition apparatus is reduced. Therefore, in consideration of this point, it is preferable that a barrier layer 26 is provided on the end face 25a forming the opening 25 of the resin mask 21, as shown in FIG. By forming the barrier layer 26, it is possible to prevent gas from being generated from the end face 25 a that forms the opening 25 of the resin mask 21.

  As the barrier layer 26, an inorganic oxide, an inorganic nitride, a metal thin film layer, or a vapor deposition layer can be used. As the inorganic oxide, an oxide of aluminum, silicon, indium, tin, or magnesium can be used, and as the metal, aluminum or the like can be used. The thickness of the barrier layer 26 is preferably about 0.05 μm to 1 μm. Therefore, in the manufacturing method of the present invention described with reference to FIG. 1, the step of forming the barrier layer 26 as described above may be performed after obtaining the vapor deposition mask 100.

  Furthermore, the barrier layer preferably covers the deposition source side surface of the resin mask 21. The barrier property is further improved by covering the deposition source side surface of the resin mask 21 with the barrier layer 26. In the case of inorganic oxides and inorganic nitrides, the barrier layer is preferably formed by various PVD methods and CVD methods. In the case of a metal, it is preferably formed by a vacuum deposition method. The surface on the vapor deposition source side of the resin mask 21 referred to here may be the entire surface on the vapor deposition source side of the resin mask 21, and is exposed from the metal mask on the surface of the resin mask 21 on the vapor deposition source side. It may be only the part which is.

(Metal mask)
The metal mask 10 is made of metal, and when viewed from the front of the metal mask 10, the metal mask 10 is vertically positioned at a position overlapping the opening 25, in other words, at a position where all the openings 25 arranged in the resin mask 21 can be seen. A plurality of rows of slits 15 extending in the horizontal direction or the horizontal direction are arranged. In FIG. 5, slits 15 extending in the vertical direction of the metal mask 10 are continuously arranged in the horizontal direction. In the present invention, an example in which a plurality of slits 15 extending in the vertical direction or the horizontal direction is arranged in a plurality of rows has been described. However, the slit 15 has only one row in the vertical direction or the horizontal direction. It may be arranged.

  The width W of the slit 15 is not particularly limited, but is preferably designed to be at least shorter than the pitch between the adjacent openings 25. Specifically, as shown in FIG. 5A, when the slit 15 extends in the vertical direction, the horizontal width W of the slit 15 is shorter than the pitch P1 of the openings 25 adjacent in the horizontal direction. It is preferable to do. Similarly, although not illustrated, when the slit 15 extends in the horizontal direction, the width in the vertical direction of the slit 15 is preferably shorter than the pitch P2 of the openings 25 adjacent in the vertical direction. On the other hand, the vertical length L when the slit 15 extends in the vertical direction is not particularly limited, and the vertical length of the metal mask 10 and the opening 25 provided in the resin mask 21 are not limited. What is necessary is just to design suitably according to a position. Therefore, in the manufacturing method of the present invention described with reference to FIG. 1, it is preferable to design as described above when the metal plate is etched.

  Further, the slits 15 extending continuously in the vertical direction or the horizontal direction may be divided into a plurality of pieces by the bridge 18 as shown in FIG. FIG. 6B is a front view of the vapor deposition mask 100 as viewed from the metal mask 10 side. A plurality of slits 15 extending continuously in the vertical direction shown in FIG. The example divided | segmented into (slit 15a, 15b) is shown. The width of the bridge 18 is not particularly limited, but is preferably about 5 μm to 20 μm. By setting the width of the bridge 18 within this range, the rigidity of the metal mask 10 can be effectively increased. The arrangement position of the bridge 18 is not particularly limited, but the bridge 18 is preferably arranged so that the divided slits overlap with the two or more openings 25.

  The cross-sectional shape of the slit 15 formed in the metal mask 10 is not particularly limited, but, as with the opening 25 in the resin mask 21, as shown in FIG. It is preferable to have a shape having Therefore, in the manufacturing method of the present invention described with reference to FIG. 1, it is preferable to perform etching so as to have the cross-sectional shape as described above when the metal plate is etched.

  The material of the metal mask 10 is not particularly limited, and any conventionally known material can be appropriately selected and used in the field of the evaporation mask, and examples thereof include metal materials such as stainless steel, iron-nickel alloy, and aluminum alloy. . Among them, an invar material that is an iron-nickel alloy can be suitably used because it is less deformed by heat.

  Further, when vapor deposition is performed on the substrate using the vapor deposition mask 100 of the present invention, a metal mask 10 is used when it is necessary to place a magnet or the like behind the substrate and attract the vapor deposition mask 100 in front of the substrate by magnetic force. Is preferably made of a magnetic material. Examples of the magnetic metal mask 10 include pure iron, carbon steel, W steel, Cr steel, Co steel, KS steel, MK steel, NKS steel, Cunico steel, and Al-Fe alloy. When the material forming the metal mask 10 is not a magnetic material, the metal mask 10 may be magnetized by dispersing the magnetic powder in the material.

  The thickness of the metal mask 10 is not particularly limited, but is preferably about 5 μm to 100 μm. Considering prevention of shadow during vapor deposition, the thickness of the metal mask 10 is preferably thin. However, when the thickness is smaller than 5 μm, the risk of breakage and deformation increases and handling may be difficult. However, in the present invention, since the metal mask 10 is integrated with the resin mask 21, even when the thickness of the metal mask 10 is as thin as 5 μm, the risk of breakage and deformation can be reduced. It can be used if it is 5 μm or more. When the thickness is greater than 100 μm, shadows may be generated, which is not preferable. Therefore, in the manufacturing method of the present invention described with reference to FIG. 1, it is preferable to prepare in consideration of these points when preparing the resin layer 60 with a metal mask.

  Hereinafter, the relationship between the generation of shadows and the thickness of the metal mask 10 will be described in detail with reference to FIGS. 7A to 7C. As shown in FIG. 7A, when the thickness of the metal mask 10 is thin, the vapor deposition material released from the vapor deposition source toward the vapor deposition target is the inner wall surface of the slit 15 of the metal mask 10 or the metal mask. 10 passes through the slit 15 of the metal mask 10 and the opening 25 of the resin mask 21 without colliding with the surface on the side where the resin mask 21 is not provided. Thereby, it becomes possible to form a vapor deposition pattern with a uniform film thickness on the vapor deposition object. That is, the occurrence of shadows can be prevented. On the other hand, as shown in FIG. 7B, when the thickness of the metal mask 10 is thick, for example, when the thickness of the metal mask 10 exceeds 100 μm, a part of the vapor deposition material released from the vapor deposition source. Collides with the inner wall surface of the slit 15 of the metal mask 10 or the surface of the metal mask 10 where the resin mask 21 is not formed, and cannot reach the deposition target. As the amount of the vapor deposition material that cannot reach the vapor deposition target increases, an undeposited portion having a thickness smaller than the target vapor deposition thickness is generated on the vapor deposition target.

  In order to sufficiently prevent the generation of shadows, it is preferable that the cross-sectional shape of the slit 15 is a shape that expands toward the vapor deposition source, as shown in FIG. With such a cross-sectional shape, even if the thickness of the entire deposition mask is increased for the purpose of preventing distortion that may occur in the deposition mask 100 or improving durability, it is emitted from the deposition source. The deposited material can reach the deposition object without colliding with the surface of the slit 15 or the inner wall surface of the slit 15. More specifically, the angle formed by the straight line connecting the lower bottom tip of the slit 15 of the metal mask 10 and the upper bottom tip of the slit 15 of the metal mask 10 and the bottom surface of the metal mask 10 is 25 ° to 65 °. It is preferable to be within the range. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable. With such a cross-sectional shape, even if the thickness of the metal mask 10 is relatively thick for the purpose of preventing distortion that may occur in the vapor deposition mask 100 or improving durability, the metal is released from the vapor deposition source. The vapor deposition material can reach the vapor deposition object without colliding with the inner wall surface of the slit 15. As a result, the occurrence of shadows can be more effectively prevented. FIG. 7 is a partial schematic cross-sectional view for explaining the relationship between the generation of shadows and the slits 15 of the metal mask 10. In the form shown in FIG. 7, the slit 15 of the metal mask 10 has a shape that expands toward the vapor deposition source side, and the end faces that face the opening of the resin mask 21 are substantially parallel. In order to prevent the occurrence of shadows more effectively, the slits of the metal mask 10 and the opening 25 of the resin mask 21 both have a shape in which the cross-sectional shape expands toward the deposition source side. It is preferable that Therefore, in the manufacturing method of the vapor deposition mask of the present invention, the slits of the metal mask 10 and the slits of the metal mask 10 and the resin so that the cross-sectional shape of the opening of the resin mask is widened toward the vapor deposition source side. It is preferable to manufacture the opening 25 of the mask 21.

  FIGS. 8A to 8D are partial schematic sectional views showing the relationship between the slit of the metal mask and the opening of the resin mask. In the illustrated embodiment, the slit 15 of the metal mask and the opening of the resin mask are shown. The cross-sectional shape of the entire opening formed by the step 25 is stepped. As shown in FIG. 8, the occurrence of shadows can be effectively prevented by making the cross-sectional shape of the entire opening into a stepped shape spreading toward the vapor deposition source side.

  Therefore, in the manufacturing method of the vapor deposition mask of this invention, it is preferable to manufacture so that the cross-sectional shape of the whole opening formed of the slit of a metal mask and the opening part 25 of a resin mask may become step shape.

  As shown in FIGS. 1D and 8A, the cross-sectional shape of the slit 15 of the metal mask or the resin mask 21 may be such that the end faces facing each other are substantially parallel, but FIG. As shown in (c), only one of the slit 15 of the metal mask and the opening of the resin mask may have a cross-sectional shape that expands toward the vapor deposition source side. As described above, in order to more effectively prevent the occurrence of shadows, the slit 15 of the metal mask and the opening 25 of the resin mask are formed as shown in FIG. 5B or FIG. As shown in FIG. 5, it is preferable that both have a cross-sectional shape that expands toward the vapor deposition source side.

  The width of the flat portion (reference numeral (X) in FIG. 8) in the step-like cross section is not particularly limited, but when the width of the flat portion (X) is less than 1 μm, the width of the slit of the metal mask Due to the interference, the effect of preventing shadows tends to be reduced. Therefore, considering this point, the width of the flat portion (X) is preferably 1 μm or more. The preferable upper limit value is not particularly limited, and can be appropriately set in consideration of the size of the opening of the resin mask, the interval between adjacent openings, and the like, and is about 20 μm as an example.

  8A to 8D show an example in which one opening 25 overlapping the slit 15 is provided in the horizontal direction when the slit extends in the vertical direction. 2, when the slit extends in the vertical direction, two or more openings 25 overlapping the slit 15 may be provided in the horizontal direction. In FIG. 9, both the slit 15 of the metal mask and the opening 25 of the resin mask have a cross-sectional shape that expands toward the vapor deposition source side, and the opening 25 that overlaps the slit 15 extends in the lateral direction. Two or more are provided.

(Method for manufacturing organic semiconductor element)
The method for manufacturing an organic semiconductor element of the present invention is characterized in that an organic semiconductor element is formed using the vapor deposition mask 100 manufactured by the manufacturing method of the present invention described above. As the vapor deposition mask 100, the vapor deposition mask 100 manufactured by the manufacturing method of the present invention described above can be used as it is, and a detailed description thereof is omitted here. According to the vapor deposition mask of the present invention described above, an organic semiconductor element having a high-definition pattern can be formed by the opening 25 having high dimensional accuracy of the vapor deposition mask 100. As an organic semiconductor element manufactured with the manufacturing method of this invention, the organic layer, light emitting layer, cathode electrode, etc. of an organic EL element can be mentioned, for example. In particular, the method for producing an organic semiconductor element of the present invention can be suitably used for producing R, G, and B light emitting layers of organic EL elements that require high-definition pattern accuracy.

DESCRIPTION OF SYMBOLS 100 ... Deposition mask 10 ... Metal mask 11 ... Metal plate 15 ... Slit 18 ... Bridge 20 ... Resin layer 21 ... Resin mask 25 ... Opening 40 ... Frame 60 ... Resin layer 62 with a metal mask ... Resist material 64 ... Resist pattern

Claims (3)

A method for producing a vapor deposition mask in which a metal mask in which slits are formed and a resin mask in which openings corresponding to a pattern to be vapor deposited are formed at positions overlapping with the slits,
Preparing a resin layer with a metal mask provided with a metal mask with slits formed on one surface of the resin layer;
Irradiating a laser beam from the metal mask side and forming an opening corresponding to a pattern to be deposited on the resin layer; and
With
In the step of forming the opening, a liquid is applied to the other surface of the resin layer in the resin layer with the metal mask and the one surface of the resin layer in the resin layer with the metal mask exposed by the slit. A method of manufacturing a vapor deposition mask, wherein laser light is irradiated from the metal mask side in a contact state.   The method for producing a vapor deposition mask according to claim 1, wherein a liquid having a viscosity of 0.1 mPa · s to 10 mPa · s is used as the liquid. A method for producing an organic semiconductor element, comprising:
3. A method for manufacturing an organic semiconductor element, wherein a vapor deposition mask manufactured by the manufacturing method according to claim 1 or 2 is used.

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