JP6145060B2 - Joining method, joining system and joining apparatus - Google Patents

Description

  Embodiments disclosed herein relate to a bonding method, a bonding system, and a bonding apparatus.

  In recent years, for example, in a semiconductor device manufacturing process, a substrate to be processed such as a silicon wafer or a compound semiconductor wafer is becoming larger and thinner. A thin substrate to be processed having a large diameter may be warped or cracked during conveyance or polishing. For this reason, the substrate to be processed is reinforced by attaching a support substrate such as a glass substrate to the substrate to be processed.

  For example, Patent Document 1 discloses that a bonding apparatus that bonds a substrate to be processed and a support substrate via an adhesive, and an outer peripheral portion of a superposed substrate in which the substrate to be processed and the support substrate are bonded has a higher temperature than the central portion. The joining system provided with the heat processing apparatus heated with is disclosed. The heat treatment apparatus includes an annular heater, and heats the outer peripheral portion of the superposed substrate placed on the heater at a temperature higher than that of the central portion. Thereby, the adhesive force of the adhesive agent at the outer peripheral portion of the superposed substrate is improved, and the substrate to be processed and the support substrate are firmly joined at the outer peripheral portion, so that the ease of handling of the superposed substrate can be improved.

JP 2013-247280 A

  However, the technique described in Patent Document 1 described above does not consider the heat treatment time of the polymerized substrate. For example, in the technique described in Patent Document 1, when the heat treatment of the polymerized substrate is performed for a long time, the adhesive on the outer peripheral portion of the polymerized substrate is completely cured, and the substrate to be processed and the support substrate are bonded in a later process. When peeling, there is a possibility that peeling between the substrate to be processed and the support substrate cannot be performed smoothly.

  An object of one embodiment is to provide a bonding method, a bonding system, and a bonding apparatus capable of appropriately performing a heat treatment on a polymerization substrate.

  The joining method according to one aspect of the embodiment includes an application process, a joining process, and a temporary curing process. In the applying step, an adhesive is spread on the first substrate. In the joining step, the first substrate and the second substrate are joined via the adhesive while heating the adhesive at a temperature lower than the curing temperature of the adhesive. In the temporary curing step, the polymerization substrate in which the first substrate and the second substrate are bonded is heated at a temperature equal to or higher than the curing temperature of the adhesive and shorter than the time for the adhesive to cure.

  According to one aspect of the embodiment, the heat treatment can be appropriately performed on the polymerization substrate.

FIG. 1 is a schematic plan view showing the configuration of the joining system according to the first embodiment. FIG. 2 is a schematic side view of the substrate to be processed and the support substrate. FIG. 3 is a schematic side view showing the configuration of the first coating apparatus. FIG. 4 is a schematic side view showing the configuration of the second coating apparatus. FIG. 5 is a schematic side view showing the configuration of the heat treatment apparatus. FIG. 6 is a schematic plan view showing the configuration of the heat treatment apparatus. FIG. 7 is a schematic side view showing the configuration of the edge cutting device. FIG. 8 is a schematic perspective view showing the configuration of the edge cut device. FIG. 9 is a schematic plan view showing the configuration of the bonding apparatus. FIG. 10 is a schematic side view showing the configuration of the joint. FIG. 11 is a flowchart illustrating a processing procedure of processing executed by the joining system according to the first embodiment. FIG. 12 is a flowchart showing the processing procedure of the inspection / recleaning processing. FIG. 13 is a diagram illustrating an operation example of the bonding process. FIG. 14 is a diagram illustrating a relationship between each process and a device that executes the process. FIG. 15 is a diagram illustrating a relationship between each process and an apparatus that executes the process. FIG. 16 is a diagram illustrating a relationship between each process and an apparatus that executes the process. FIG. 17 is a schematic side view of a substrate to be processed and a support substrate according to the second embodiment. FIG. 18 is a schematic side view showing a bonding surface of a substrate to be processed to which a release agent is applied. FIG. 19 is a schematic side view showing a bonding surface of a substrate to be processed to which a protective agent and a release agent are applied. FIG. 20 is a schematic side view showing the configuration of the first coating apparatus according to the second embodiment. FIG. 21 is a flowchart illustrating a processing procedure of processing executed by the joining system according to the second embodiment. FIG. 22 is a diagram illustrating a relationship between each process and a device that executes the process. FIG. 23 is a flowchart illustrating a processing procedure of a bonding process and a temporary curing process according to the third embodiment. FIG. 24 is a schematic plan view showing the configuration of the joining system according to the fourth embodiment. FIG. 25 is a schematic side view showing the configuration of the temporary curing device according to the fourth embodiment. FIG. 26 is a schematic side view showing the configuration of the temporary curing device according to the fourth embodiment. FIG. 27 is a schematic side view showing the configuration of the second coating apparatus according to the fifth embodiment. FIG. 28 is a schematic side view illustrating a configuration of an inspection unit according to a modification.

  Hereinafter, embodiments of a bonding method and a bonding system disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

(First embodiment)
<1. Structure of joining system>
First, the configuration of the joining system according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic plan view showing the configuration of the joining system according to the first embodiment.
FIG. 2 is a schematic side view of the substrate to be processed and the support substrate. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

  The bonding system 1 according to the first embodiment shown in FIG. 1 forms a superposed substrate T by bonding a substrate to be processed W and a support substrate S (see FIG. 2) via an adhesive G and a release agent R. To do.

  The substrate W to be processed is a substrate in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, and the plate surface on the side where the electronic circuits are formed is a bonding surface Wj with the support substrate S. It is said. After being bonded to the support substrate S, the target substrate W is thinned by polishing the non-bonded surface Wn which is the surface opposite to the bonded surface Wj. The release agent R is applied to the bonding surface Wj of the substrate W to be processed.

  On the other hand, the support substrate S is a substrate having substantially the same diameter as the substrate W to be processed, and supports the substrate W to be processed. As the support substrate S, for example, a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer can be used in addition to a glass substrate. The adhesive G is applied to the bonding surface Sj of the support substrate S with the target substrate W.

  The adhesive G is a thermosetting resin adhesive. Thermosetting is a property that does not easily deform at room temperature (for example, about 20 ° C.), but is softened by heating so that it can be easily molded. Further, by heating, polymerization proceeds and cures, and the original state cannot be restored. . As the adhesive G used in the joining system 1, for example, a softening temperature of about 120 to 140 ° C. and a curing temperature of about 180 ° C. are used.

  The release agent R is applied for the purpose of smoothly peeling the substrate to be processed W and the support substrate S when the polymerization substrate T is peeled to the substrate to be processed W and the support substrate S. As the release agent R, a material having lower adhesive strength and lower viscosity than the adhesive G is used. Further, the release agent R has a property that is soluble in an organic solvent such as thinner, and also has a property that it does not cure even when heated.

  A region where the release agent R is removed (hereinafter referred to as “uncoated region Q”) is present on the outer peripheral portion of the bonding surface Wj of the substrate W to be processed. When the target substrate W and the support substrate S are bonded in a bonding process described later, the adhesive G applied to the support substrate S adheres to the uncoated region Q. Thereby, the to-be-processed substrate W and the support substrate S are firmly joined by the adhesive G in the uncoated region Q, and for example, positional displacement when the superposed substrate T after joining is transported is prevented.

  In the unapplied region Q, the release agent R is applied to the entire bonding surface Wj of the substrate W to be processed, and then an edge cutting process is performed to remove the release agent R from the peripheral portion including the bevel portion of the substrate W to be processed. Formed by. This point will be described later.

  As shown in FIG. 1, the joining system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are integrally connected in this order in the positive direction of the X axis.

  The carry-in / out station 2 includes a cassette mounting table 10 and a first transfer region 11. The cassette mounting table 10 is a place on which cassettes Cw, Cs, and Ct for storing a plurality of (for example, 25) substrates in a horizontal state are mounted. For example, four placement units 12 are placed in line in the carry-in / out station 2. For example, a cassette Cw that accommodates the substrate W to be processed, a cassette Cs that accommodates the support substrate S, and a cassette Ct that accommodates the superposed substrate T are placed on each placement portion 12.

  In the first transport region 11, a transport path 13 that extends in the Y-axis direction and a first transport device 14 that is movable along the transport path 13 are arranged. The first transport device 14 is also movable in the X-axis direction and can be swung around the Z-axis, and the cassettes Cw, Cs, and Ct placed on the placement unit 12 and a first receiver of the processing station 3 to be described later. The substrate W to be processed, the support substrate S, and the superposed substrate T are transferred to and from the transfer unit 20.

  The processing station 3 includes a first delivery unit 20, a second transfer region 30, a first coating device 40, a second coating device 50, a plurality of heat treatment devices 60, an edge cut device 70, and a bonding device 80. Is provided.

  The first delivery unit 20 is disposed between the first transport area 11 and the second transport area 30. In the first delivery unit 20, the substrate to be processed W and the support substrate S are disposed between the first transport device 14 disposed in the first transport region 11 and the second transport device 31 disposed in the second transport region 30. And the superposition | polymerization board | substrate T is delivered.

  A second transfer device 31 is disposed in the second transfer region 30. The second transfer device 31 is movable in the X-axis direction and the Y-axis direction and can be swung around the Z-axis, and the first delivery unit 20, the first coating device 40, the second coating device 50, the heat treatment device 60, the edge The to-be-processed substrate W, the support substrate S, and the superposition | polymerization board | substrate T are conveyed between the cutting apparatus 70 and the joining apparatus 80. FIG.

  The first coating device 40 is a device that applies the adhesive G to the bonding surface Sj of the support substrate S. The second coating device 50 is a device that applies the release agent R to the bonding surface Wj of the substrate W to be processed. The heat treatment apparatus 60 is an apparatus that heats the support substrate S coated with the adhesive G or the substrate to be processed W coated with the release agent R to a predetermined temperature. The edge cutting device 70 is a device that removes the release agent R from the peripheral edge of the substrate W to be processed. And the joining apparatus 80 is an apparatus which joins the to-be-processed substrate W and the support substrate S via the adhesive agent G and the peeling agent R. FIG.

  The first coating device 40, the second coating device 50, the plurality of heat treatment devices 60, the edge cut device 70, and the bonding device 80 are arranged side by side around the second transfer region 30. Specifically, the 1st coating device 40 is arrange | positioned in the position nearest to the 1st delivery part 20 among the space of the Y-axis positive direction side of the 2nd conveyance area | region 30, and the 2nd coating device 50 is 2nd. It arrange | positions in the position which opposes the 1st coating device 40 on both sides of the conveyance area | region 30. FIG. The bonding device 80 is disposed adjacent to the first coating device 40, and the plurality of heat treatment devices 60 are disposed adjacent to the second coating device 50. Further, the edge cut device 70 is disposed at a position facing the first delivery unit 20 with the second transport region 30 in between.

  The plurality of heat treatment apparatuses 60 are arranged side by side in two rows on the left and right sides, for example, in a state of being stacked in four upper and lower stages. The number and arrangement of the heat treatment apparatuses 60 can be arbitrarily set.

  The joining system 1 includes a control device 4. The control device 4 controls the operation of the joining system 1. The control device 4 is a computer, for example, and includes a control unit 5 and a storage unit 6. The storage unit 6 stores a program for controlling various processes such as a joining process. The control unit 5 is, for example, a CPU (Central Processing Unit), and controls the operation of the bonding system 1 by reading and executing a program stored in the storage unit 6.

  Such a program may be recorded on a computer-readable recording medium and may be installed in the storage unit 6 of the control device 4 from the recording medium. Examples of the computer-readable recording medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card. Moreover, the control part 5 may be comprised only with hardware, without using a program.

<2. Configuration of first coating device>
Next, the structure of the 1st coating device 40 is demonstrated with reference to FIG. FIG. 3 is a schematic side view showing the configuration of the first coating device 40.

  As shown in FIG. 3, the first coating device 40 includes a chamber 41, a substrate holding mechanism 42, a liquid supply unit 43, and a recovery cup 44.

  The chamber 41 accommodates the substrate holding mechanism 42, the liquid supply unit 43, and the recovery cup 44. Note that an FFU (Fan Filter Unit) (not shown) is provided on the ceiling of the chamber 41. The FFU forms a downflow in the chamber 41.

  The substrate holding mechanism 42 is provided substantially at the center of the chamber 41, and includes a holding unit 421, a support member 422, and a driving unit 423.

  The holding unit 421 is, for example, a porous chuck, and holds the support substrate S by suction. The column member 422 is a member that extends in the vertical direction, and has a base end portion rotatably supported by the drive unit 423 and horizontally supports the holding unit 421 at the tip end portion. The drive unit 423 rotates the column member 422 around the vertical axis. The substrate holding mechanism 42 rotates the support member 422 supported by the support member 422 by rotating the support member 422 using the drive unit 423. Thereby, the support substrate S held by the holding part 421 rotates. The support substrate S is held by the substrate holding mechanism 42 with the bonding surface Sj facing upward.

  The liquid supply unit 43 supplies the adhesive G to the support substrate S held by the substrate holding mechanism 42. The liquid supply unit 43 includes an adhesive discharge unit 431, an arm 432 that horizontally supports the adhesive discharge unit 431, and a swivel lifting mechanism 433 that swivels and lifts the arm 432. The adhesive discharge unit 431 is connected to the adhesive supply source 435 via the valve 434 and discharges the adhesive G supplied from the adhesive supply source 435 to the support substrate S.

  The adhesive G discharged from the adhesive discharge part 431 is mixed with an organic solvent such as thinner in order to reduce the viscosity of the adhesive G and to easily spread the adhesive G on the support substrate S. .

  The collection cup 44 is disposed so as to surround the holding unit 421 and collects the adhesive G that is scattered from the support substrate S by the rotation of the holding unit 421. A drainage port 441 is formed at the bottom of the recovery cup 44, and the adhesive G collected by the recovery cup 44 is discharged from the drainage port 441 to the outside of the first coating device 40. Further, an exhaust port 442 for discharging downflow gas supplied from an FFU (not shown) to the outside of the first coating device 40 is formed at the bottom of the recovery cup 44.

  In the first coating device 40 configured as described above, the substrate holding mechanism 42 rotates the support substrate S, and the liquid supply unit 43 supplies the adhesive G to the bonding surface Sj of the rotating support substrate S. The adhesive G supplied to the bonding surface Sj of the support substrate S is spread over the entire surface of the bonding surface Sj of the support substrate S by centrifugal force accompanying the rotation of the support substrate S. Thereby, the coating film of the adhesive G is formed on the bonding surface Sj of the support substrate S.

<3. Configuration of second coating device>
Next, the structure of the 2nd coating device 50 is demonstrated with reference to FIG. FIG. 4 is a schematic side view showing the configuration of the second coating apparatus 50.

  As shown in FIG. 4, the second coating device 50 includes a chamber 51, a substrate holding mechanism 52, a liquid supply unit 53, and a recovery cup 54. The configurations of the chamber 51, the substrate holding mechanism 52 and the recovery cup 54 are the same as those of the first coating device 40. That is, the substrate holding mechanism 52 includes a holding unit 521, a support member 522, and a driving unit 523, and the recovery cup 54 includes a drain port 541 and an exhaust port 542. The substrate W to be processed is held by the substrate holding mechanism 52 with the bonding surface Wj facing upward.

  The liquid supply unit 53 includes a release agent discharge unit 531, an arm 532 that horizontally supports the release agent discharge unit 531, and a swivel lifting mechanism 533 that swivels and lifts the arm 532. The release agent discharge unit 531 is connected to the release agent supply source 535 via the valve 534, and discharges the release agent R supplied from the release agent supply source 535 to the substrate W to be processed.

  The release agent R discharged from the release agent discharge portion 531 is mixed with an organic solvent such as thinner in order to reduce the viscosity of the release agent R and to easily spread the release agent R on the substrate W to be processed. ing.

  In the second coating apparatus 50 configured as described above, the substrate holding mechanism 52 rotates the substrate W to be processed, and the liquid supply unit 53 supplies the release agent R to the bonding surface Wj of the rotating substrate W to be processed. To do. The release agent R supplied to the bonding surface Wj of the substrate to be processed W is spread on the entire surface of the bonding surface Wj of the substrate to be processed W by centrifugal force accompanying the rotation of the substrate to be processed W. Thereby, a coating film of the release agent R is formed on the bonding surface Wj of the substrate to be processed W.

  The second coating apparatus 50 includes a bevel cleaning unit 55. The bevel cleaning unit 55 according to the first embodiment is used for the purpose of removing the adhesive G attached to the bevel portion of the support substrate S.

  The bevel cleaning unit 55 is provided below the support substrate S held by the substrate holding mechanism 52, for example, at the bottom of the recovery cup 54. The bevel cleaning unit 55 is connected to a chemical solution supply source 552 via a valve 551, and the chemical solution supplied from the chemical solution supply source 552, here an organic solvent such as thinner, is directed toward the outer peripheral portion of the back surface of the support substrate S. Discharge.

  In the second coating device 50, the substrate holding mechanism 52 holds and rotates the support substrate S, and the bevel cleaning unit 55 supplies the organic solvent to the outer peripheral portion of the back surface of the rotating support substrate S. The organic solvent supplied to the outer periphery of the back surface of the support substrate S moves from the back surface side of the support substrate S to the front surface side, dissolves the adhesive G attached to the bevel portion of the support substrate S, and removes it from the bevel portion.

  As described above, in the second coating apparatus 50 according to the first embodiment, in addition to the process of applying the release agent R to the substrate W to be processed, the bevel cleaning process of the support substrate S is also performed. This will be described later.

<4. Configuration of heat treatment equipment>
Next, the configuration of the heat treatment apparatus 60 will be described with reference to FIG. FIG. 5 is a schematic side view showing the configuration of the heat treatment apparatus 60, and FIG. 6 is a schematic plan view thereof.

  As shown in FIG. 5, the heat treatment apparatus 60 includes a processing container 610 that can be closed. A loading / unloading port (not shown) is formed on the side surface of the processing container 610 on the second transfer region 30 (see FIG. 1) side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  A gas supply port 611 for supplying an inert gas such as nitrogen gas is formed inside the processing container 610 on the ceiling surface of the processing container 610. A gas supply pipe 613 communicating with the gas supply source 612 is connected to the gas supply port 611. The gas supply pipe 613 is provided with a supply device group 614 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.

  An intake port 615 that sucks the atmosphere inside the processing container 610 is formed on the bottom surface of the processing container 610. A negative pressure generator 616 such as a vacuum pump is connected to the intake port 615.

  Inside the processing container 610, a heating unit 620 that heat-processes the target substrate W or the support substrate S and a temperature adjustment unit 621 that controls the temperature of the target substrate W or the support substrate S are provided. The heating unit 620 and the temperature adjustment unit 621 are arranged side by side in the X-axis direction.

  The heating unit 620 includes an annular holding member 631 that houses the hot plate 630 and holds the outer periphery of the hot plate 630, and a substantially cylindrical support ring 632 that surrounds the outer periphery of the holding member 631. The hot plate 630 has a thick and substantially disk shape, and can place and heat the substrate to be processed W or the support substrate S. The hot plate 630 includes a heater 633, for example. The heating temperature of the hot plate 630 is controlled by the control unit 5, for example, and the substrate to be processed W or the support substrate S placed on the hot plate 630 is heated to a predetermined temperature.

  Below the hot plate 630, for example, three elevating pins 640 for supporting the substrate W to be processed or the support substrate S from below and elevating and lowering are provided. The raising / lowering pin 640 can be moved up and down by the raising / lowering drive part 641. Near the center of the hot plate 630, through holes 642 that penetrate the hot plate 630 in the thickness direction are formed at, for example, three locations. The elevating pins 640 are inserted through the through holes 642 and can protrude from the upper surface of the heat plate 630.

  The temperature adjustment unit 621 has a temperature adjustment plate 650. As shown in FIG. 6, the temperature adjustment plate 650 has a substantially square flat plate shape, and the end surface on the heat plate 630 side is curved in an arc shape. In the temperature adjustment plate 650, two slits 651 are formed along the Y-axis direction. The slit 651 is formed from the end surface of the temperature adjustment plate 650 on the hot plate 630 side to the vicinity of the center of the temperature adjustment plate 650. The slit 651 can prevent the temperature adjustment plate 650 from interfering with the elevation pins 640 of the heating unit 620 and the elevation pins 660 of the temperature adjustment unit 621 described later. The temperature adjustment plate 650 includes a temperature adjustment member (not shown) such as a Peltier element. The cooling temperature of the temperature adjustment plate 650 is controlled by, for example, the control unit 5, and the target substrate W or the support substrate S placed on the temperature adjustment plate 650 is cooled to a predetermined temperature.

  The temperature adjustment plate 650 is supported by the support arm 652 as shown in FIG. A drive unit 653 is attached to the support arm 652. The drive unit 653 is attached to a rail 654 that extends in the X-axis direction. The rail 654 extends from the temperature adjustment unit 621 to the heating unit 620. By this drive unit 653, the temperature adjustment plate 650 can move between the heating unit 620 and the temperature adjustment unit 621 along the rail 654.

  Below the temperature control plate 650, for example, three elevating pins 660 for supporting the substrate W to be processed from below and elevating it are provided. The elevating pin 660 can be moved up and down by an elevating drive unit 661. The elevating pins 660 are inserted through the slits 651 and can protrude from the upper surface of the temperature adjustment plate 650.

  When the substrate to be processed W or the support substrate S is carried into the processing container 610, the lift pins 660 that have been lifted and waited in advance receive the substrate to be processed W or the support substrate S. Subsequently, the elevating pins 660 are lowered, and the substrate to be processed W or the support substrate S is placed on the temperature adjustment plate 650.

  Thereafter, the temperature adjustment plate 650 is moved along the rail 654 to above the heat plate 630 by the driving unit 653, and the substrate W to be processed or the support substrate S is lifted in advance and transferred to the lift pins 640 that have been waiting. Thereafter, the lift pins 640 are lowered, and the substrate W or the support substrate S is placed on the hot plate 630. Then, the target substrate W or the support substrate S is heated to a predetermined temperature by the hot plate 630.

  Thereafter, the elevating pins 640 are raised, and the temperature adjusting plate 650 is moved above the hot plate 630. Subsequently, the substrate W to be processed or the support substrate S is transferred from the lifting pins 640 to the temperature adjustment plate 650, and the temperature adjustment plate 650 moves to the second transport region 30 side. During the movement of the temperature adjustment plate 650, the temperature of the substrate to be processed W or the support substrate S is adjusted to a predetermined temperature.

<5. Configuration of edge cut device>
Next, the configuration of the edge cut device 70 will be described with reference to FIGS. FIG. 7 is a schematic side view showing the configuration of the edge cutting device 70, and FIG. 8 is a schematic perspective view thereof.

  As shown in FIG. 7, the edge cut device 70 includes a processing container 710 capable of sealing the inside. A loading / unloading port (not shown) for the substrate W to be processed is formed on the side surface of the processing container 710 on the second transfer region 30 (see FIG. 1) side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. It is done.

  An FFU 711 is provided on the ceiling of the processing container 710. The FFU 711 forms a down flow in the processing container 710. A gas supply source 713 is connected to the FFU 711 via a supply device group 712 including a valve, a flow rate adjusting unit, and the like. In addition, an air inlet 714 that sucks the atmosphere inside the processing container 710 is formed on the bottom surface of the processing container 710. A negative pressure generator 715 such as a vacuum pump is connected to the intake port 714.

  In the processing container 710, a solvent supply unit 720 and an adsorption moving unit 730 are provided. The solvent supply unit 720 is provided on the X axis negative direction side in the processing container 710, and the adsorption moving unit 730 is provided on the X axis positive direction side in the processing container 710.

  The solvent supply unit 720 includes a main body 721, a base member 722 that supports the main body 721 at a predetermined height, and an upper nozzle 723 and a lower nozzle 724 provided outside the main body 721 on the X axis positive direction side. And a suction part 725 provided inside the main body part 721 on the X axis positive direction side.

  The upper nozzle 723 and the lower nozzle 724 are attached to the outside of the main body 721, and are arranged to face each other with a predetermined space therebetween. The upper nozzle 723 discharges an organic solvent such as thinner downward, and the lower nozzle 724 discharges the organic solvent upward. Organic solvent supply sources 742 and 744 are connected to the upper nozzle 723 and the lower nozzle 724 via supply device groups 741 and 743 each including a valve, a flow rate adjusting unit, and the like.

  The suction part 725 is provided between the upper nozzle 723 and the lower nozzle 724 and sucks the organic solvent discharged from the upper nozzle 723 and the lower nozzle 724. A negative pressure generator 745 such as a vacuum pump is connected to the suction unit 725, for example.

  The suction moving unit 730 is provided on a rail 731 extending in the X-axis direction, a moving mechanism 732 that moves along the rail 731, and an upper portion of the moving mechanism 732, and suction that holds and holds the substrate W to be processed rotatably. A holding portion 733.

  As shown in FIG. 8, the edge cut device 70 further includes an inspection unit 750. The inspection unit 750 is disposed on the Y axis positive direction side of the suction holding unit 733, for example. The inspection unit 750 includes a main body 751 and a base member 752 that supports the main body 751 at a predetermined height.

  The main body 751 of the inspection unit 750 is, for example, a CCD (Charge Coupled Device) camera, and images the surface and bevel portion of the outer peripheral portion of the substrate W or the support substrate S. Specifically, the edge cut device 70 performs imaging by the main body 751 while rotating the suction holding unit 733. Thereby, the surface and bevel part of the outer peripheral part of the to-be-processed substrate W and the support substrate S are imaged over the perimeter. Image data of the captured image is transmitted to the control unit 5.

  When the substrate to be processed W is carried into the processing container 710, the suction holding unit 733 sucks and holds the substrate to be processed W. Subsequently, the moving mechanism 732 moves along the rail 731 and arranges the peripheral portion of the substrate W to be processed in the inspection unit 750.

  Thereafter, the main body 751 images the peripheral edge of the substrate W to be processed while the suction holder 733 rotates the substrate W to be processed at a low speed. Then, the control unit 5 detects the end surface (the tip of the bevel portion) of the substrate W to be processed based on the image captured by the main body unit 751.

  Subsequently, the moving mechanism 732 moves on the rail 731 based on the result of the end face detection, and positions the peripheral edge of the substrate W to be processed between the upper nozzle 723 and the lower nozzle 724.

  Thereafter, the solvent supply unit 720 discharges the organic solvent from the upper nozzle 723 and the lower nozzle 724 toward the peripheral edge of the substrate W while the suction holding unit 733 rotates the substrate W to be processed. As a result, the release agent R applied to the peripheral edge of the substrate W to be processed is dissolved by the organic solvent and removed from the substrate W to be processed. Note that the organic solvent discharged from the upper nozzle 723 and the lower nozzle 724 is sucked by the suction unit 725.

  Here, when the substrate to be processed W held by the suction holding unit 733 is placed on the suction holding unit 733 in a perfect circle in which the center of the suction holding unit 733 and the center of the target substrate W are aligned. Is not limited. Therefore, when the edge cut process is performed on the target substrate W without detecting the end face of the target substrate W placed in a state that is not a perfect circle, the release agent R on the peripheral portion of the target substrate W is removed. The removal width varies depending on the rotational position of the substrate W to be processed.

  On the other hand, according to the edge cut device 70 according to the first embodiment, the end face position of each substrate W to be processed is accurately grasped by detecting the end face of the substrate W to be processed in advance. Can do. That is, the edge cutting device 70 rotates the substrate W to be processed while appropriately moving the suction holding unit 733 in the horizontal direction at the position of the solvent supply unit 720, thereby removing the release agent R at the peripheral portion of the substrate W to be processed. It is possible to make the removal width constant.

  The edge cut device 70 according to the first embodiment also performs a process of inspecting the surface state of the support substrate S or the substrate W after the edge cut process using the inspection unit 750. This will be described later.

<6. Structure of joining device>
Next, the structure of the joining apparatus 80 is demonstrated with reference to FIG. FIG. 9 is a schematic plan view showing the configuration of the bonding apparatus 80.

  As shown in FIG. 9, the joining apparatus 80 includes a processing chamber 81 that can seal the inside. On the side surface of the processing chamber 81 on the second transfer region 30 side, a loading / unloading port 811 for the target substrate W, the support substrate S, and the superposed substrate T is formed. The loading / unloading port 811 is provided with an open / close shutter (not shown).

  Inside the processing chamber 81, an inner wall 812 that divides the region in the processing chamber 81 into a preprocessing region D1 and a bonding region D2 may be provided. When the inner wall 812 is provided, a carry-in / out port 813 for the substrate W to be processed, the support substrate S, and the superposed substrate T is formed in the inner wall 812, and an opening / closing shutter (not shown) is provided in the carry-in / out port 813. The aforementioned loading / unloading port 811 is formed on the side surface of the processing chamber 81 in the preprocessing region D1.

  In the pretreatment region D <b> 1, a delivery unit 82 that delivers the substrate W to be processed, the support substrate S, and the superposed substrate T to and from the outside of the bonding apparatus 80 is provided. The delivery unit 82 is disposed adjacent to the loading / unloading port 811.

  The delivery unit 82 includes a delivery arm 821 and a support pin 822. The delivery arm 821 delivers the substrate W to be processed, the support substrate S, and the superposed substrate T between the second transfer device 31 (see FIG. 1) and the support pins 822. The support pins 822 are provided in a plurality of, for example, three locations, and support the target substrate W, the support substrate S, and the superposed substrate T.

  Note that a plurality of, for example, two stages of delivery units 82 are arranged in the vertical direction, and any two of the target substrate W, the support substrate S, and the superposed substrate T can be delivered at the same time. For example, the substrate W to be processed or the support substrate S before bonding may be delivered by one delivery unit 82, and the superposed substrate T after joining may be delivered by another delivery unit 82. Alternatively, the substrate W to be processed before bonding may be delivered by one delivery unit 82, and the support substrate S before joining may be delivered by another delivery unit 82.

  On the Y-axis negative direction side of the pretreatment region D1, that is, the loading / unloading port 813 side, for example, a reversing unit 83 that reverses the front and back surfaces of the substrate W to be processed is provided.

  The reversing unit 83 includes a holding arm 831 that sandwiches and holds the substrate to be processed W or the support substrate S. The holding arm 831 extends in the horizontal direction (X-axis direction in FIG. 9), is rotatable around the horizontal axis, and is in the horizontal direction (X-axis direction and Y-axis direction) and the vertical direction ( It can move in the Z-axis direction).

  The reversing unit 83 includes a position adjusting mechanism that adjusts the horizontal direction of the substrate W or the support substrate S to be processed. The position adjustment mechanism includes a detection unit 832 that detects the position of the notch portion of the support substrate S or the substrate W to be processed. The reversing unit 83 detects the position of the notch portion by detecting the position of the notch portion with the detection unit 832 while moving the support substrate S or the substrate W to be processed held by the holding arm 831 in the horizontal direction. The horizontal direction of the substrate to be processed W or the support substrate S is adjusted by adjusting.

  On the Y axis positive direction side of the bonding region D2, a transport unit 84 for transporting the substrate to be processed W, the support substrate S, and the superposed substrate T is provided for the delivery unit 82, the reversing unit 83, and the bonding unit 85 described later. . The conveyance unit 84 is disposed adjacent to the carry-in / out port 813.

  The conveyance unit 84 includes two conveyance arms 841 and 842. These transfer arms 841 and 842 are arranged in two steps in this order from the bottom in the vertical direction, and can be moved in the horizontal direction and the vertical direction by a drive unit (not shown).

  Of the transfer arms 841 and 842, the transfer arm 841 holds and transfers the back surface of the support substrate S or the like, that is, the non-joint surface Sn. The transport arm 842 holds and transports the surface of the substrate W to be processed whose front and back surfaces are reversed by the reversing unit 83, that is, the outer peripheral portion of the bonding surface Wj.

  A bonding portion 85 that bonds the target substrate W and the support substrate S is provided on the Y axis negative direction side of the bonding region D2.

  In the joining apparatus 80 configured as described above, when the substrate to be processed W is delivered to the delivery arm 821 of the delivery unit 82 by the second transport device 31 (see FIG. 1), the delivery arm 821 transfers the substrate to be treated W. Transfer to the support pin 822. Thereafter, the substrate W to be processed is transported from the support pins 822 to the reversing unit 83 by the transport arm 841 of the transport unit 84.

  The substrate W transferred to the reversing unit 83 is adjusted in the horizontal direction by detecting the position of the notch by the detecting unit 832 of the reversing unit 83. Thereafter, the front and back of the substrate to be processed W are reversed by the reversing unit 83. That is, the joint surface Wj is directed downward.

  Thereafter, the substrate W to be processed is transferred from the reversing unit 83 to the bonding unit 85 by the transfer arm 842 of the transfer unit 84. At this time, since the transfer arm 842 holds the outer peripheral portion of the substrate W to be processed, the bonding surface Wj can be prevented from being contaminated by particles or the like attached to the transfer arm 842, for example.

  On the other hand, when the support substrate S is delivered to the delivery arm 821 of the delivery unit 82 by the second transfer device 31 (see FIG. 1), the delivery arm 821 delivers the support substrate S to the support pins 822. Thereafter, the support substrate S is transported from the support pins 822 to the reversing unit 83 by the transport arm 841 of the transport unit 84.

  The support substrate S transported to the reversing unit 83 is adjusted in the horizontal direction by detecting the position of the notch by the detecting unit 832 of the reversing unit 83. Thereafter, the support substrate S is transported from the reversing unit 83 to the bonding unit 85 by the transport arm 841 of the transport unit 84.

  When the carry-in of the substrate to be processed W and the support substrate S to the bonding portion 85 is completed, the substrate to be processed W and the support substrate S are bonded to each other by the bonding portion 85 to form the superposed substrate T. The formed superposed substrate T is transported from the joining portion 85 to the delivery portion 82 by the transport arm 841 of the transport portion 84, and then delivered to the delivery arm 821 via the support pin 822, and further from the delivery arm 821 to the second state. It is delivered to the transport device 31.

  Next, the configuration of the joining portion 85 will be described with reference to FIG. FIG. 10 is a schematic side view showing the configuration of the joining portion 85.

  As shown in FIG. 10, the joint portion 85 includes a first holding portion 110 and a second holding portion 120 that is disposed above the first holding portion 110 and is opposed to the first holding portion 110.

  The first holding unit 110 and the second holding unit 120 are, for example, electrostatic chucks, and hold the support substrate S and the substrate to be processed W by electrostatic adsorption. The first holding unit 110 holds the support substrate S from below, and the second holding unit 120 holds the substrate W to be processed from above. The support substrate S and the substrate to be processed W are held by the first holding unit 110 and the second holding unit 120 in a state where the bonding surfaces Sj and Wj face each other.

  The first holding unit 110 and the second holding unit 120 include a vacuum suction unit that vacuum-sucks the support substrate S and the substrate W to be processed, in addition to an electrostatic suction unit that electrostatically attracts the support substrate S and the substrate W to be processed. May be provided.

  The joining portion 85 includes a first heating mechanism 130, a second heating mechanism 140, and a pressurizing mechanism 150.

  The first heating mechanism 130 is built in the first holding unit 110, and heats the first holding unit 110 to heat the support substrate S held by the first holding unit 110 to a predetermined temperature. The second heating mechanism 140 is built in the second holding unit 120, and heats the substrate to be processed W held by the second holding unit 120 to a predetermined temperature by heating the second holding unit 120. To do.

The pressurizing mechanism 150 moves the second holding unit 120 vertically downward to bring the target substrate W into contact with the support substrate S and pressurize it. The pressurizing mechanism 150 includes a base member 151,
A pressure vessel 152, a gas supply pipe 153, and a gas supply source 154 are provided. The base member 151 is attached to the ceiling surface inside the first chamber portion 161 described later.

  The pressure vessel 152 is made of, for example, a stainless steel bellows that can expand and contract in the vertical direction. The lower end portion of the pressure vessel 152 is fixed to the upper surface of the second holding unit 120, and the upper end portion is fixed to the lower surface of the base member 151.

  One end of the gas supply pipe 153 is connected to the pressure vessel 152 via the base member 151 and a first chamber portion 161 described later, and the other end is connected to the gas supply source 154.

  The pressure vessel 152 extends the pressure vessel 152 and lowers the second holding unit 120 by supplying gas from the gas supply source 154 to the inside of the pressure vessel 152 via the gas supply pipe 153. Thereby, the to-be-processed substrate W contacts with the support substrate S and is pressurized. The pressure applied to the target substrate W and the support substrate S is adjusted by adjusting the pressure of the gas supplied to the pressure vessel 152.

  The joining unit 85 includes a chamber 160, a moving mechanism 170, a decompression unit 180, a first imaging unit 191, and a second imaging unit 192.

  The chamber 160 is a processing container whose inside can be sealed, and includes a first chamber portion 161 and a second chamber portion 162. The first chamber part 161 is a bottomed cylindrical container having an open lower part, and the second holding part 120, the pressure container 152, and the like are accommodated therein. The second chamber portion 162 is a bottomed cylindrical container with an open top, and the first holding portion 110 and the like are accommodated therein.

  The first chamber portion 161 is configured to be vertically movable by a lifting mechanism (not shown) such as an air cylinder. The first chamber 161 is lowered by the lifting mechanism and brought into contact with the second chamber 162, thereby forming a sealed space inside the chamber 160. A seal member 163 for ensuring the confidentiality of the chamber 160 is provided on the contact surface of the first chamber portion 161 with the second chamber portion 162. As the seal member 163, for example, an O-ring is used.

  The moving mechanism 170 is provided on the outer periphery of the first chamber portion 161 and moves the second holding portion 120 in the horizontal direction via the first chamber portion 161. A plurality (for example, five) of such moving mechanisms 170 are provided on the outer peripheral portion of the first chamber portion 161, and four of the five moving mechanisms 170 are used for the horizontal movement of the second holding unit 120. The remaining one is used for the rotation of the second holding unit 120 around the vertical axis.

  The moving mechanism 170 includes a cam 171 that moves in contact with the outer peripheral portion of the first chamber portion 161 and moves the second holding portion 120, and a rotation drive portion 173 that rotates the cam 171 via the shaft 172. The cam 171 is provided eccentrically with respect to the central axis of the shaft 172. Then, by rotating the cam 171 by the rotation driving unit 173, the center position of the cam 171 with respect to the second holding unit 120 moves, and the second holding unit 120 can be moved in the horizontal direction.

  The decompression unit 180 is provided, for example, below the second chamber unit 162 and decompresses the interior of the chamber 160. The decompression unit 180 includes an intake pipe 181 for taking in the atmosphere in the chamber 160 and an intake device 182 such as a vacuum pump connected to the intake pipe 181.

  The first imaging unit 191 is disposed below the second holding unit 120 and images the surface of the substrate W to be processed held by the second holding unit 120. The second imaging unit 192 is disposed above the first holding unit 110 and images the surface of the support substrate S held by the first holding unit 110.

  The first image pickup unit 191 and the second image pickup unit 192 are configured to be movable in the horizontal direction by a moving mechanism (not shown), and enter the chamber 160 before the first chamber unit 161 is lowered, and the substrate to be processed. W and the support substrate S are imaged. Imaging data of the first imaging unit 191 and the second imaging unit 192 is transmitted to the control unit 5. For example, a wide-angle CCD camera is used as each of the first imaging unit 191 and the second imaging unit 192.

<7. Specific operation of joining system>
Next, the procedure of the joining process performed by the joining system 1 according to the first embodiment will be described with reference to FIGS. FIG. 11 is a flowchart illustrating a processing procedure of processing executed by the joining system 1 according to the first embodiment. FIG. 12 is a flowchart showing the procedure of the inspection / recleaning process. FIG. 13 is a flowchart showing the processing procedure of the joining process. In addition, each apparatus with which the joining system 1 is provided performs each process procedure shown in FIG. 11 according to control of the control apparatus 4. FIG.

  In the bonding system 1, first, a cassette Cw in which a plurality of substrates to be processed W are accommodated, a cassette Cs in which a plurality of support substrates S are accommodated, and an empty cassette Ct are placed on the placement unit 12 of the carry-in / out station 2. Each is placed. Thereafter, the first transport device 14 takes out the support substrate S from the cassette Cs and transports it to the first delivery unit 20 of the processing station 3. At this time, the support substrate S is transported with the non-joint surface Sn facing downward.

  The support substrate S transported to the first delivery unit 20 is taken out from the first delivery unit 20 by the second transport device 31 and then transported to the first coating device 40.

  In the 1st coating device 40, the process which apply | coats the adhesive agent G to the joint surface Sj of the support substrate S using the adhesive agent discharge part 431 is performed (step S101). Thereby, the coating film of the adhesive G is formed on the bonding surface Sj of the support substrate S.

  Subsequently, the support substrate S is taken out from the first coating device 40 by the second transport device 31 and then transported to the heat treatment device 60.

  In the heat treatment apparatus 60, a process of heating the support substrate S to a predetermined temperature is performed (step S102). Thereby, the organic solvent contained in the adhesive G applied to the support substrate S is vaporized. Thereafter, the support substrate S is cooled to a predetermined temperature, for example, room temperature, in the heat treatment apparatus 60. Note that the adhesive G in which the organic solvent is vaporized is hard enough to prevent the adhesive G from dripping even when the support substrate S is tilted.

  Subsequently, the support substrate S is taken out from the heat treatment apparatus 60 by the second transfer apparatus 31 and then transferred to the second coating apparatus 50.

  In the 2nd coating device 50, the process which wash | cleans the bevel part of the support substrate S using the bevel washing | cleaning part 55 is performed (step S103). Thereby, the adhesive G adhering to the bevel portion of the support substrate S is removed.

  Subsequently, the support substrate S is taken out from the second coating device 50 by the second transport device 31 and then transported to the heat treatment device 60.

  In the heat treatment apparatus 60, a process of heating the support substrate S to a predetermined temperature is performed (step S104). By such heat treatment, the organic solvent attached to the support substrate S in the bevel cleaning in step S103 is vaporized and removed from the support substrate S.

  Subsequently, in the joining system 1, an inspection / re-cleaning process is performed (step S105). The inspection / re-cleaning process is a process for inspecting the bevel portion of the support substrate S after the bevel cleaning, and re-cleaning the bevel portion when the adhesive G remains in the bevel portion. Here, the contents of the inspection / recleaning process will be described with reference to FIG.

  As shown in FIG. 12, when the inspection / re-cleaning process is started, first, the second transfer device 31 takes out the support substrate S from the heat treatment device 60 and transfers it to the edge cut device 70 (step S201).

  Subsequently, the edge cut device 70 rotates the support substrate S using the suction holding unit 733 and uses the inspection unit 750 to detect the peripheral portion of the support substrate S, specifically, the outer peripheral surface and the bevel portion. An image is taken (step S202). The inspection unit 750 transmits the image data of the captured image to the control unit 5.

  Subsequently, the control unit 5 determines whether or not the adhesive G is attached to the bevel portion of the support substrate S based on the image data received from the inspection unit 750 (step S203). For example, the control unit 5 determines that the adhesive G is attached to the bevel portion of the support substrate S when the degree of unevenness of the portion corresponding to the bevel portion of the support substrate S in the captured image exceeds a predetermined threshold. To do. The control unit 5 stores in advance the image data of the bevel portion of the support substrate S before applying the adhesive G in the storage unit 6, and the image data and the image data of the image captured by the inspection unit 750. When the degree of coincidence exceeds the threshold value, it may be determined that the adhesive G is attached to the bevel portion of the support substrate S.

  When it determines with the adhesive agent G adhering to the bevel part of the support substrate S in step S203 (step S203, Yes), the control part 5 performs the process which alert | reports abnormality (step S204).

  For example, the control unit 5 turns on an indicator lamp (not shown) included in the joining system 1. Then, the control unit 5 notifies the host device of information that an abnormality has occurred in the chemical solution supply source 552 connected to the bevel cleaning unit 55 of the second coating device 50. Moreover, the control part 5 may display said information on the display part which is not shown in which the joining system 1 is provided.

  When the adhesive G remains on the bevel portion of the support substrate S, the discharge amount of the chemical liquid discharged from the bevel cleaning portion 55 of the second coating device 50 does not reach the specified amount, and is applied to the back surface of the support substrate S. It is conceivable that the chemical solution has not reached sufficiently. Therefore, when it is determined that the adhesive G is attached to the bevel portion of the support substrate S, information indicating that an abnormality has occurred in the chemical solution supply source 552 is notified. As a result, the operator can quickly identify the occurrence of the abnormality and its cause.

  Subsequently, the edge cut device 70 performs re-cleaning of the bevel portion of the support substrate S (step S205). Specifically, the edge cut device 70 uses the solvent supply unit 720 to rotate the support substrate S using the adsorption holding unit 733 and the front side and the back side of the peripheral portion including the bevel portion of the support substrate S. The organic solvent that is a chemical solution is discharged toward the peripheral edge of the support substrate S. Thereby, the adhesive G remaining on the bevel portion of the support substrate S is removed.

  After finishing the process of step S205, the edge cut device 70 returns the process to step S202, and inspects the peripheral edge portion of the support substrate S again. The edge cut device 70 repeats the processes of steps S202 to S205 until it is determined in step S203 that the adhesive G has not adhered to the bevel portion of the support substrate S. When it is determined that the adhesive G is not attached to the bevel portion of the support substrate S (No at Step S203), the inspection / re-cleaning process is finished.

  When the inspection / re-cleaning process is completed, the support substrate S is taken out from the edge cut device 70 by the second transfer device 31 and then transferred to the heat treatment device 60.

  In the heat treatment apparatus 60, a process of heating the support substrate S to a predetermined temperature is performed (step S106). The heat treatment in step S106 is performed at a higher temperature than the heat treatment in step S102 and step S104. Specifically, the heat treatment apparatus 60 heats the support substrate S to a temperature higher than normal temperature and lower than the softening temperature (120 to 140 ° C.) of the adhesive G.

  By such heat treatment, the organic solvent that could not be removed in the heat treatment of Step S102 and Step S104 is vaporized, and the adhesive G is further cured. Further, the organic solvent adhering to the support substrate S is vaporized and removed from the support substrate S in the inspection / recleaning process in step S105.

  Subsequently, the support substrate S is taken out from the heat treatment apparatus 60 by the second transfer apparatus 31 and then transferred to the bonding apparatus 80.

  The horizontal direction of the support substrate S conveyed to the bonding apparatus 80 is adjusted by the reversing unit 83 (step S107). Specifically, the reversing unit 83 detects the position of the notch by the detection unit 832 while moving the support substrate S held by the holding arm 831 in the horizontal direction. And the inversion part 83 adjusts the position of the detected notch part. Thereby, the horizontal direction of the support substrate S is adjusted.

  Here, if the adhesive G attached to the bevel portion of the support substrate S is not completely removed in the bevel cleaning process (step S103), the process of step S107 is performed with the adhesive G attached to the notch portion of the support substrate S. May be performed. In such a case, there is a possibility that the joining device 80 cannot detect the position of the notch portion or erroneously detects in step S107, and there is a possibility that the horizontal orientation of the support substrate S cannot be adjusted appropriately. .

  On the other hand, in the joining system 1 according to the first embodiment, the surface state of the bevel portion of the support substrate S is inspected in the inspection / recleaning process (step S105), and the adhesive G remains on the bevel portion. In some cases, the bevel portion was rewashed. For this reason, there is no possibility that the position of the notch portion cannot be detected or erroneously detected, and the horizontal orientation of the support substrate S can be adjusted appropriately.

  Subsequently, the support substrate S is held by the first holding unit 110 preheated to X ° C. which is the softening temperature (120 to 140 ° C.) of the adhesive G by the first heating mechanism 130 (step S108). Thereby, the adhesive G applied to the support substrate S is softened.

  In addition, if the heating temperature by the 1st heating mechanism 130 is temperature close | similar to the softening temperature (120-140 degreeC) of the adhesive agent G rather than normal temperature (about 20 degreeC) and the hardening temperature (about 180 degreeC) of the adhesive agent G. Good. The support substrate S is held by the first holding unit 110 with the bonding surface Sj facing upward.

  On the other hand, the processing for the substrate W to be processed is also performed in duplicate with the processing in steps S101 to S108 described above.

  The substrate W to be processed is taken out from the cassette Cw by the first transfer device 14 and transferred to the first delivery unit 20 of the processing station 3. At this time, the substrate W to be processed is transported with the non-joint surface Wn facing downward.

  The to-be-processed substrate W transferred to the first delivery unit 20 is taken out from the first delivery unit 20 by the second transfer device 31 and then transferred to the second coating device 50.

  In the second coating device 50, a process for applying the release agent R to the bonding surface Wj of the substrate W to be processed is performed using the release agent discharge unit 531 (step S109). Thereby, a coating film of the release agent R is formed on the bonding surface Wj of the substrate to be processed W.

  Subsequently, the substrate W to be processed is taken out from the second coating apparatus 50 by the second transfer apparatus 31 and then transferred to the heat treatment apparatus 60.

  In the heat treatment apparatus 60, a process for heating the substrate W to be processed to a predetermined temperature is performed (step S110). Thereby, the organic solvent contained in the release agent R applied to the substrate to be processed W is vaporized. Thereafter, the substrate to be processed W is cooled to a predetermined temperature, for example, room temperature, in the heat treatment apparatus 60. Note that the release agent R in which the organic solvent is vaporized is hardened to such an extent that it does not sag even when the substrate to be processed W is tilted.

  Subsequently, the substrate W to be processed is taken out of the heat treatment apparatus 60 by the second transfer apparatus 31 and then transferred to the edge cut apparatus 70.

  In the edge cut apparatus 70, an edge cut process for removing the release agent R from the peripheral edge portion including the bevel portion of the substrate W to be processed is performed using the solvent supply unit 720 (step S111). Thereby, the release agent R is removed from the peripheral portion including the bevel portion of the substrate to be processed W, and an uncoated region Q (see FIG. 2) is formed on the outer peripheral portion of the bonding surface Wj in the substrate to be processed W.

  Subsequently, an inspection / re-cleaning process is performed on the target substrate W after the edge cutting process (step S112).

  The contents of the inspection / recleaning process in step S112 are the same as the contents of the inspection / recleaning process in step S105. That is, the edge cut device 70 images the surface and bevel portion of the outer peripheral portion of the substrate W to be processed using the inspection unit 750, and the controller 5 causes the release agent R to adhere to the bevel portion of the substrate W to be processed. It is determined whether or not. When it is determined that the release agent R adheres to the bevel portion of the substrate W to be processed, the edge cut device 70 re-cleans the bevel portion of the substrate W to be processed using the solvent supply unit 720.

  Subsequently, the substrate W to be processed is taken out from the edge cut device 70 by the second transfer device 31 and then transferred to the heat treatment device 60.

  In the heat treatment apparatus 60, a process of heating the substrate to be processed W to a predetermined temperature is performed (step S113). The heat treatment in step S113 is performed at a higher temperature than the heat treatment in step S110.

  By such heat treatment, the organic solvent remaining in the release agent R without being removed in the heat treatment in step S110 is vaporized, and the release agent R is further cured. Further, the organic solvent adhering to the substrate to be processed W is vaporized and removed from the substrate to be processed W in the inspection / recleaning process in step S112.

  In this way, after performing the edge cut process or the inspection / recleaning process, the heat treatment is performed to remove the organic solvent adhering to the substrate W to be processed, thereby preventing the generation of voids in the release agent R. can do.

  Subsequently, the substrate W to be processed is taken out of the heat treatment apparatus 60 by the second transfer apparatus 31 and then transferred to the bonding apparatus 80.

  The to-be-processed substrate W conveyed to the joining apparatus 80 is adjusted in the horizontal direction by the reversing unit 83 (step S114).

  In the bonding system 1, the surface state of the bevel portion of the substrate W to be processed is inspected and re-cleaned (step S112). If the release agent R remains on the bevel portion, the bevel portion is re-cleaned. It was decided. For this reason, there is no possibility that the position of the notch portion cannot be detected or erroneously detected, and the horizontal orientation of the substrate to be processed W can be adjusted appropriately.

  Subsequently, the front and back of the substrate to be processed W are reversed by the reversing unit 83 (step S115). Thereby, the to-be-processed substrate W will be in the state which the joint surface Wj faced the downward direction.

  Subsequently, the substrate W to be processed is held by the second holding unit 120 that is preheated to X ° C. by the second heating mechanism 140 (step S116). The target substrate W is held by the second holding unit 120 with the bonding surface Wj facing downward.

  Subsequently, the horizontal positions of the substrate to be processed W and the support substrate S are adjusted (step S117). A plurality of predetermined reference points are formed on the periphery of the substrate to be processed W and the support substrate S. The joining unit 85 moves the first imaging unit 191 and the second imaging unit 192 illustrated in FIG. 10 in the horizontal direction, and images the peripheral portions of the target substrate W and the support substrate S, respectively.

  Subsequently, the joint unit 85 matches the position of the reference point included in the image captured by the first image capturing unit 191 with the position of the reference point included in the image captured by the second image capturing unit 192. Then, the horizontal position of the substrate to be processed W is adjusted using the moving mechanism 170. That is, the position of the substrate W to be processed in the horizontal direction is adjusted by rotating the cam 171 by the rotation driving unit 173 and moving the second holding unit 120 in the horizontal direction via the first chamber unit 161.

  Here, in the bevel cleaning process in step S103 and the edge cutting process in step S111, the adhesive G adhering to the bevel portion of the support substrate S and the release agent R adhering to the bevel portion of the substrate W to be processed are not completely removed. In addition, it is assumed that the adhesive G and the release agent R remain attached to the reference point. In such a case, the joining apparatus 80 may not be able to detect the position of the reference point or may be erroneously detected in step S117, and there is a possibility that the process of step S117 cannot be performed appropriately.

  On the other hand, in the bonding system 1 according to the first embodiment, in the inspection / re-cleaning process in step S105 and step S112, the surface state of the bevel part of the support substrate S and the substrate W to be processed is inspected, and the bevel part is In the case where the adhesive G or the release agent R remains, the bevel portion is washed again. For this reason, there is no possibility that the reference point cannot be detected or erroneously detected, and the process of step S117 can be appropriately performed.

  Subsequently, after the first imaging unit 191 and the second imaging unit 192 are withdrawn from the chamber 160, the joining unit 85 lowers the first chamber unit 161. As a result, the first chamber portion 161 abuts on the second chamber portion 162, and a sealed space is formed in the chamber 160. Thereafter, the bonding portion 85 decompresses the interior of the chamber 160 by sucking the atmosphere in the chamber 160 using the decompression portion 180.

  Subsequently, the bonding unit 85 lowers the second holding unit 120 using the pressurizing mechanism 150 to bring the substrate W to be processed and the support substrate S into contact (Step S118). Further, the bonding portion 85 pressurizes the substrate to be processed W and the support substrate S by supplying gas to the pressure vessel 152 to bring the inside of the pressure vessel 152 to a desired pressure (step S119).

  The adhesive G applied to the bonding surface Sj of the support substrate S is softened by heating, and the support substrate S and the target substrate W are supported by being pressed against the target substrate W by a desired pressure for a predetermined time. A superposed substrate T is formed by bonding to the substrate S (see FIG. 13). At this time, since the inside of the chamber 160 is in a reduced pressure atmosphere, there is no possibility that a void is generated between the target substrate W and the support substrate S.

  Subsequently, a temporary curing process is performed (step S120). The temporary curing process is a process that makes it difficult to cause a positional shift between the substrate to be processed W and the support substrate S in a subsequent transport process or the like by curing the adhesive G to an extent that it is not completely cured.

  The joining portion 85 raises the heating temperature of the superposed substrate T using the first heating mechanism 130 and the second heating mechanism 140 while maintaining the state where the superposed substrate T is pressurized by the pressurizing mechanism 150.

  Specifically, the first heating mechanism 130 and the second heating mechanism 140 heat the polymerization substrate T to a temperature equal to or higher than the curing temperature (about 180 ° C.) of the adhesive G, for example, 200 ° C. Thereby, the adhesive G starts to harden.

  Then, the joining portion 85 stops heating by the first heating mechanism 130 and the second heating mechanism 140 before the adhesive G is completely cured. For example, in order to completely cure the adhesive G used in the bonding system 1 according to the first embodiment, a process of heating the superposed substrate T at 200 ° C. for about 2 hours is performed in an apparatus different from the bonding system 1. May be. On the other hand, in the temporary curing process, the polymerization substrate T is heated at 200 ° C. for a short time of about 5 to 10 minutes. For this reason, the adhesive G is in a state of being cured to such an extent that it is not completely cured. In addition, since the release agent R has a property that does not cure even when heated, it is not cured by this temporary curing treatment.

  As described above, the bonding portion 85 according to the first embodiment is bonded by heating the polymerization substrate T at a temperature equal to or higher than the curing temperature of the adhesive G and for a time shorter than the time for the adhesive G to cure. The agent G is cured to such an extent that it is not completely cured.

  Thereby, since it becomes difficult to produce position shift with the to-be-processed substrate W and the support substrate S in subsequent conveyance processing etc., the handleability of the superposition | polymerization board | substrate T can be improved.

  Further, since the bonding portion 85 heats the entire surface of the superposed substrate T on the support substrate S side and the entire surface of the substrate to be processed W from both sides, the superposed substrate T can be heated uniformly. Therefore, compared with the case where the superposed substrate T is heated from one side of the support substrate S side or the target substrate W side, the occurrence of the distortion of the superposed substrate T can be suppressed. It is possible to prevent the formation of voids in the agent R.

  Furthermore, since the joining portion 85 heats the superposed substrate T while pressurizing the superposed substrate T using the pressurizing mechanism 150, the occurrence of distortion of the superposed substrate T can be more reliably suppressed.

  Thereafter, the superposed substrate T is taken out from the joining device 80 by the second transport device 31, and then transferred to the first transport device 14 via the first delivery section 20, and accommodated in the cassette Ct by the first transport device 14. (Step S121). In this way, a series of joining processing is completed. Note that, as described above, the adhesive G of the polymerization substrate T is in a state of being cured to the extent that it is not completely cured by the temporary curing process. For this reason, misalignment between the target substrate W and the support substrate S hardly occurs during the transport by the second transport device 31 or the first transport device 14.

  Next, the relationship between each process described above and the apparatus that executes the process will be described with reference to FIGS. 14 to 16 are diagrams illustrating the relationship between each process and a device that executes the process. 14 shows each process for the support substrate S, FIG. 15 shows each process for the substrate W, and FIG. 16 shows a bonding process and a temporary curing process.

  As shown in FIGS. 14 and 15, in the bonding system 1, among the processes for the support substrate S, the adhesive coating process in step S <b> 101 is performed using the first coating apparatus 40, and the bevel cleaning process in step S <b> 103 is the second. This is performed using the coating apparatus 50. Further, in the bonding system 1, the release agent coating process of step S <b> 109 is performed using the second coating apparatus 50 among the processes for the substrate W to be processed.

  As described above, in the bonding system 1, the second coating apparatus 50 that performs the bevel cleaning process on the support substrate S also performs the release agent coating process on the target substrate W. That is, in the bonding system 1, an apparatus that performs the bevel cleaning process on the support substrate S and an apparatus that performs the release agent coating process on the substrate to be processed W are shared. Therefore, according to the joining system 1, the number of apparatuses can be reduced compared with the case where these processes are performed by different apparatuses.

  Further, in the bonding system 1, the adhesive application process (step S101) and the bevel cleaning process (step S103), which are processes for the support substrate S, are performed by different apparatuses.

  The adhesive coating process and the bevel cleaning process can all be executed by the first coating device 40. However, in such a case, since the processing time of the first coating device 40 becomes long, for example, the timing for carrying the next support substrate S into the first coating device 40 is delayed, which may reduce the throughput. On the other hand, according to the bonding system 1, since the adhesive application process and the bevel cleaning process are executed by different apparatuses, the throughput is reduced as compared with the case where the adhesive application process and the bevel cleaning process are executed by one apparatus. Can be suppressed.

  As described above, the bonding system 1 performs the adhesive coating process on the support substrate S in the first coating apparatus 40 and performs the bevel cleaning process on the support substrate S in the second coating apparatus 50 different from the first coating apparatus 40. Furthermore, the second coating apparatus 50 performs the release agent coating process on the substrate W to be processed. Therefore, according to the joining system 1, it is possible to reduce the number of devices while preventing a decrease in throughput.

  In the bonding system 1, after the adhesive application process (step S101), the bevel cleaning process (step S103) is performed after the heating process (step S102). For this reason, even when the adhesive application process and the bevel cleaning process are executed by one apparatus, in order to perform the heating process, the process of carrying out the support substrate S after the adhesive application process from the apparatus and the heating process It is necessary to carry the subsequent support substrate S into the apparatus again. Therefore, even when the adhesive application process is executed by the first application apparatus 40 and the bevel cleaning process is executed by the second application apparatus 50, these processes are executed by one apparatus. There is no risk that the throughput will be reduced.

  In the bonding system 1, the adhesive coating process for the support substrate S is performed in the first coating apparatus 40, and the release agent coating process for the substrate to be processed W is performed in the second coating apparatus 50.

  Thereby, the joining system 1 can start the release agent coating process for the substrate W to be processed without waiting for the end of the adhesive coating process for the support substrate S. Therefore, according to the joining system 1, the time required for a series of joining processes can be shortened as compared with the case where the adhesive application process and the release agent application process are performed by one apparatus.

  In the bonding system 1, the bevel cleaning process for the support substrate S is performed by the second coating apparatus 50, and the inspection / recleaning process is performed by the edge cutting apparatus 70 different from the second coating apparatus 50.

  When the adhesive G remains on the bevel portion of the support substrate S after the bevel cleaning process, there is a possibility that an abnormality has occurred in the bevel cleaning portion 55 of the second coating apparatus 50. For this reason, even if the bevel portion is rewashed using the bevel cleaning portion 55, the adhesive G remaining on the bevel portion may not be removed.

  On the other hand, in the bonding system 1, since the bevel part is re-cleaned using the edge cutting device 70 different from the second coating apparatus 50 that performs the bevel cleaning process, the adhesive remaining on the bevel part of the support substrate S is used. The agent G can be reliably removed.

  In addition, the 1st coating device 40 may be provided with the bevel cleaning part similar to the bevel cleaning part 55 with which the 2nd coating device 50 is provided. In such a case, when the adhesive G remains on the bevel portion of the support substrate S after the bevel cleaning process, the bonding system 1 performs re-cleaning in the second coating device 50 instead of the edge cut device 70. Can do.

  In the bonding system 1, the edge cut device 70 is provided with an inspection unit 750 for inspecting the surface state of the support substrate S or the substrate W to be processed.

  Thereby, after the inspection process by the inspection unit 750, the supporting substrate S or the substrate W to be processed can be shifted to the re-cleaning process without being transferred to another apparatus, so that the time required for the inspection / re-cleaning process can be shortened. it can.

  In the bonding system 1, after the bevel cleaning process and before the inspection / recleaning process, the supporting substrate S is heated to remove the chemical solution (organic solvent) attached to the supporting substrate S by the bevel cleaning process. It was decided to. Accordingly, it is possible to prevent an erroneous determination that the adhesive G remains in the bevel portion due to the chemical solution remaining in the bevel portion of the support substrate S during the inspection process.

  Further, in the bonding system 1, after the release agent coating process (Step S109) is performed on the target substrate W, the heating process (Step S110) is performed before the edge cut process (Step S111). . As a result, the organic solvent contained in the release agent R applied to the substrate to be processed W is removed and the release agent R becomes hard. Therefore, the release agent R is removed from the peripheral edge of the substrate W to be processed during the edge cutting process. It can be removed cleanly.

  In addition, as shown in FIG. 16, in the bonding system 1, a temporary curing process (step S <b> 120) is performed using a bonding apparatus 80 that performs a bonding process (steps S <b> 107, S <b> 108, S <b> 114 to S <b> 116, S <b> 117 to S <b> 119). did. Thereby, after joining processing, since it can transfer to temporary hardening processing, without conveying superposition | polymerization board | substrate T to another apparatus, the time which temporary hardening processing requires can be shortened. Further, unlike the case where the temporary curing process is performed by an apparatus different from the bonding apparatus 80, it is not necessary to perform temperature management of the superposed substrate T during conveyance.

  As described above, the joining system 1 according to the first embodiment includes the processing station 3 and the carry-in / out station 2. The processing station 3 performs predetermined processing on the support substrate S (corresponding to an example of “first substrate”) and the substrate W (corresponding to an example of “second substrate”). The carry-in / out station 2 carries in / out the support substrate S, the substrate W to be processed or the superposed substrate T to / from the processing station 3. Further, the processing station 3 includes a first coating device 40 (corresponding to an example of “first processing device”), a second coating device 50 (corresponding to an example of “second processing device”), and a bonding device 80. Prepare. The first coating device 40 includes an adhesive discharge unit 431 that discharges the adhesive G, and applies the adhesive G to the support substrate S using the adhesive discharge unit 431. The second coating device 50 includes a bevel cleaning section 55 that cleans the bevel section of the support substrate S coated with the adhesive G. The bonding apparatus 80 bonds the support substrate S and the substrate to be processed W via the adhesive G and the release agent R having a lower adhesive strength than the adhesive G. The second coating apparatus 50 further includes a release agent discharge unit 531 that discharges the release agent R, and applies the release agent R to the substrate W to be processed using the release agent discharge unit 531.

  Therefore, according to the joining system 1 according to the first embodiment, it is possible to reduce the number of apparatuses while preventing a decrease in throughput.

  The joining system 1 according to the first embodiment includes a processing station 3 and a carry-in / out station 2. The processing station 3 performs predetermined processing on the support substrate S (corresponding to an example of “first substrate”) and the substrate W (corresponding to an example of “second substrate”). The carry-in / out station 2 carries in / out the support substrate S, the substrate W to be processed or the superposed substrate T to / from the processing station 3. Further, the processing station 3 includes a first coating device 40 (corresponding to an example of a “coating device”) and a bonding device 80. The first coating device 40 spreads the adhesive G on the surface of the support substrate S. The bonding apparatus 80 performs a bonding process for bonding the support substrate S and the substrate to be processed W via the adhesive G while heating the adhesive G at a temperature lower than the curing temperature of the adhesive G. In addition, after the bonding process, the bonding apparatus 80 is configured to cure the superposed substrate T at a temperature equal to or higher than the curing temperature of the adhesive G from both sides of the superposed substrate T on the support substrate S side and the target substrate W side. A temporary curing process is performed in which heating is performed in a shorter time.

  Therefore, according to the joining system 1 which concerns on 1st Embodiment, the heat processing with respect to the superposition | polymerization board | substrate T can be performed appropriately.

  The joining system 1 according to the first embodiment includes a processing station 3 and a carry-in / out station 2. The processing station 3 performs predetermined processing on the support substrate S (corresponding to an example of “first substrate”) and the substrate W (corresponding to an example of “second substrate”). The carry-in / out station 2 carries in / out the support substrate S, the substrate W to be processed or the superposed substrate T to / from the processing station 3. The processing station 3 includes a first coating device 40 (corresponding to an example of “first processing device”), a second coating device 50 (corresponding to an example of “second processing device”), an inspection unit 750, A joining device 80. The first coating device 40 includes an adhesive discharge unit 431 that discharges the adhesive G, and applies the adhesive G to the support substrate S using the adhesive discharge unit 431. The second coating device 50 includes a bevel cleaning section 55 that cleans the bevel section of the support substrate S coated with the adhesive G. The inspection unit 750 inspects the surface state of the bevel portion of the support substrate S to which the adhesive G is applied. The bonding apparatus 80 bonds the support substrate S and the substrate W to be processed with an adhesive G.

  Therefore, according to the joining system 1 which concerns on 1st Embodiment, it can grasp | ascertain that the adhesive agent G remains in the bevel part of the support substrate S after bevel washing | cleaning before joining processing. Accordingly, for example, in the horizontal position adjustment process (step S117) performed in the bonding process, it is possible to prevent the positional deviation between the target substrate W and the support substrate S, and thus the productivity associated with the positional deviation is improved. A decrease can be prevented.

(Second Embodiment)
In the above-described embodiment, an example in which the support substrate S and the substrate to be processed W are bonded via the adhesive G and the release agent R has been described. However, the support substrate S and the substrate to be processed W are not limited to this, and a protective agent that protects circuits, bumps, and the like formed on the bonding surface Wj of the substrate to be processed W in addition to the adhesive G and the release agent R. Furthermore, it may be joined via.

  2nd Embodiment demonstrates the example in the case of joining the support substrate S and the to-be-processed substrate W via the adhesive agent G, the peeling agent R, and a protective agent. FIG. 17 is a schematic side view of the substrate W and the support substrate S according to the second embodiment. In the following description, parts that are the same as those already described are given the same reference numerals as those already described, and redundant descriptions are omitted.

  As shown in FIG. 17, in the second embodiment, the support substrate S and the substrate W to be processed are bonded via an adhesive G, a release agent R, and a protective agent P. The protective agent P, the release agent R, and the adhesive G are provided in this order from the substrate to be processed W side. Further, as in the first embodiment, the uncoated region Q is formed on the substrate W to be processed by the edge cut process.

  As the protective agent P, a material having lower adhesive strength and lower viscosity than the adhesive G is used. Further, the protective agent P has a property soluble in an organic solvent such as thinner, and also has a property of not being cured even when heated. Moreover, as the protective agent P, a material having higher adhesive force than the release agent R is used.

  Such a protective agent P is applied to the substrate to be processed W for the purpose of protecting circuits, bumps and the like formed on the bonding surface Wj of the substrate to be processed W. This point will be described with reference to FIGS. FIG. 18 is a schematic side view showing the bonding surface of the substrate to be processed W to which the release agent R is applied, and FIG. 19 shows the bonding surface of the substrate to be processed W to which the protective agent P and the release agent R are applied. It is a model side view.

  Since the release agent R has a lower adhesive force than the adhesive G, when the release agent R is applied thickly, the bonding force of the polymerized substrate T becomes weak. For this reason, it is preferable to apply the release agent R thinly.

  However, as shown in FIG. 18, since the bumps B and the like are formed on the bonding surface Wj of the substrate W to be processed, when the release agent R is thinly applied, the bumps B are not embedded in the release agent R, and the release agent R There is a possibility that a level difference will occur on the joint surface Wj after the coating is applied. As described above, when the bonding with the support substrate S is performed in a state where the bonding surface Wj of the substrate to be processed W has a step, that is, in a state where the surface area of the bonding surface Wj is large, the substrate G and the support substrate S are bonded to each other by the adhesive G. Is strongly bonded, a large force is required when the target substrate W and the support substrate S are separated.

  On the other hand, in the second embodiment, as shown in FIG. 19, the protective agent P having a stronger adhesive force than the release agent R is applied to the bonding surface Wj of the substrate W to be processed, and the bumps B are filled with the protective agent P. Further, a release agent R is further applied. Thereby, the release agent R can be applied thinly while keeping the surface area of the bonding surface Wj of the substrate W to be processed small. Therefore, in the subsequent peeling step, the substrate to be processed W and the support substrate S can be easily peeled off.

  Next, the configuration of the joining system according to the second embodiment will be described with reference to FIG. FIG. 20 is a schematic side view showing the configuration of the first coating apparatus according to the second embodiment.

  The joining system according to the second embodiment includes a first coating device 40A illustrated in FIG. 20 instead of the first coating device 40 provided in the joining system 1 according to the first embodiment.

  As shown in FIG. 20, the first coating device 40 </ b> A includes a liquid supply unit 43 </ b> A instead of the liquid supply unit 43 included in the first coating device 40. The liquid supply unit 43A further includes a protective agent discharge unit 436.

  The protective agent discharge unit 436 is connected to the protective agent supply source 438 via the valve 437, and discharges the protective agent P supplied from the protective agent supply source 438 to the substrate W to be processed.

  The protective agent P discharged from the protective agent discharge portion 436 is mixed with an organic solvent such as thinner in order to reduce the viscosity of the protective agent P and to easily spread the protective agent P on the substrate W to be processed. ing.

  Next, a specific operation of the joining system according to the second embodiment will be described with reference to FIG. FIG. 21 is a flowchart illustrating a processing procedure of processing executed by the joining system according to the second embodiment.

  Note that the processing after step S418 in FIG. 21 is the same as steps S117 to S121 shown in FIG. 21 is the same as the process of steps S101 to S108 shown in FIG. 11, and the description thereof will be omitted here.

  As shown in FIG. 21, in the bonding system according to the second embodiment, the coating process of the protective agent P is performed prior to the application of the release agent R to the substrate W to be processed.

  The substrate W to be processed is taken out from the cassette Cw by the first transfer device 14 and transferred to the first delivery unit 20 of the processing station 3. At this time, the substrate W to be processed is transported with the non-joint surface Wn facing downward. The to-be-processed substrate W conveyed to the 1st delivery part 20 is taken out from the 1st delivery part 20 by the 2nd conveyance apparatus 31, Then, it is conveyed by the 1st coating device 40A mentioned above.

  In the first coating apparatus 40A, the protective agent P is applied to the bonding surface Wj of the substrate W to be processed using the protective agent discharge unit 436 (step S409). Thereby, the coating film of the protective agent P is formed on the bonding surface Wj of the substrate W to be processed.

  Subsequently, the substrate W to be processed is taken out from the first coating apparatus 40 </ b> A by the second transfer apparatus 31 and then transferred to the heat treatment apparatus 60.

  In the heat treatment apparatus 60, a process of heating the substrate to be processed W to a predetermined temperature is performed (step S410). Thereby, the organic solvent contained in the protective agent P apply | coated to the to-be-processed substrate W vaporizes. Thereafter, the substrate to be processed W is cooled to a predetermined temperature, for example, room temperature, in the heat treatment apparatus 60. In addition, the protective agent P which the organic solvent vaporized becomes hard to such an extent that it cannot droop even if the to-be-processed substrate W is inclined.

  Thereafter, the substrate to be processed W is bonded to the support substrate S after the processing of steps S109 to S116 shown in FIG. 11 (steps S411 to S418).

  Next, the relationship between each process described above and the apparatus that executes the process will be described with reference to FIG. FIG. 22 is a diagram illustrating a relationship between each process and a device that executes the process. FIG. 22 shows each process for the substrate W to be processed.

  As shown in FIG. 22, in the joining system according to the second embodiment, the protective agent application process (step S409) and the release agent application process (step S411) are performed by different apparatuses. If these processes are executed by the first coating apparatus 40A, the processing time of the first coating apparatus 40A becomes longer. For example, the next substrate to be processed W or the support substrate S is carried into the first coating apparatus 40A. There is a possibility that the timing to perform will be delayed and the throughput will be reduced. On the other hand, according to the joining system, since the protective agent coating process and the release agent coating process are executed by different apparatuses, it is possible to suppress a decrease in throughput as compared with the case where these processes are executed by one apparatus. .

  In the bonding system according to the second embodiment, the protective agent coating process is also performed on the substrate W to be processed using the first coating device 40A that performs the adhesive coating process on the support substrate S. That is, in the bonding system according to the second embodiment, an apparatus that performs the adhesive coating process on the support substrate S and an apparatus that performs the protective agent coating process on the substrate W to be processed are shared. For this reason, according to the joining system which concerns on 2nd Embodiment, the number of apparatuses can be reduced compared with the case where these processes are each performed with a different apparatus.

  In the bonding system according to the second embodiment, the heat treatment of the substrate to be processed W is performed in two stages using the two heat treatment apparatuses 60 in the heat treatment in step S410. Specifically, the heat treatment apparatus 60 that performs the second stage heat treatment heats the substrate W to be processed at a higher temperature than the heat treatment apparatus 60 that performs the first stage heat treatment. Thus, by heating the to-be-processed substrate W in steps, it is possible to prevent the surface of the protective agent P from being uneven due to bumping of the protective agent P or the like. Such stepwise processing may be performed in other heat treatments.

(Third embodiment)
In the third embodiment, a modification of the joining process and the temporary curing process will be described with reference to FIG. FIG. 23 is a flowchart illustrating a processing procedure of a bonding process and a temporary curing process according to the third embodiment.

  As shown in FIG. 23, the bonding portion 85 holds the support substrate S by the first holding portion 110 that is preheated to X ° C. that is the softening temperature (120 to 140 ° C.) of the adhesive G by the first heating mechanism 130. (Step S501). Thereby, the adhesive G applied to the support substrate S is softened.

  Subsequently, the joining portion 85 is covered by the second holding portion 120 that has been heated in advance to Y ° C. (for example, 200 ° C.) that is equal to or higher than the curing temperature (about 180 ° C.) of the adhesive G by the second heating mechanism 140. The processing substrate W is held (step S502). Since the protective agent P and the release agent R applied to the substrate W to be processed have a property of not being cured even when heated, they are not cured even when heated to Y ° C. Note that the order of the process of step S501 and the process of step S502 may be reversed.

  Subsequently, the bonding unit 85 adjusts the horizontal positions of the substrate to be processed W and the support substrate S (step S503), and then lowers the second holding unit 120 using the pressurizing mechanism 150, thereby processing the substrate to be processed. W and the support substrate S are brought into contact (step S504), and the substrate W and the support substrate S are further pressurized (step S505).

  Thereby, first, the to-be-processed substrate W and the support substrate S are joined through the adhesive G, the release agent R, and the protective agent P. Further, when the substrate to be processed W and the support substrate S come into contact, the heat of the substrate to be processed W is transmitted to the adhesive G applied to the support substrate S, and the temperature of the adhesive G rises. Start to cure. Then, the joining portion 85 stops heating by the first heating mechanism 130 and the second heating mechanism 140 before the adhesive G is completely cured. As a result, the adhesive G is cured to such an extent that it is not completely cured.

  As described above, the bonding portion 85 heats the first holding portion 110 that holds the support substrate S to the softening temperature of the adhesive G and cures the second holding portion 120 that holds the substrate W to be processed. By heating the substrate to a temperature equal to or higher than the temperature and bringing the supporting substrate S and the substrate to be processed W into contact with each other and applying pressure, the bonding process and the temporary curing process can be performed in parallel. Thereby, throughput can be improved.

  In such a case, a temperature difference occurs between the support substrate S side and the substrate to be processed W side of the superposed substrate T, which may cause distortion of the superposed substrate T. On the other hand, since the joining portion 85 performs the temporary curing process in a state in which the superposed substrate T is pressurized from the support substrate S side and the target substrate W side, the distortion of the superposed substrate T can be suppressed.

(Fourth embodiment)
In the embodiment described above, an example in which the temporary curing process is also performed using the bonding apparatus 80 that performs the bonding process has been described, but the temporary curing process may be performed using a dedicated apparatus. This point will be described with reference to FIGS. FIG. 24 is a schematic plan view showing the configuration of the joining system according to the fourth embodiment. 25 and 26 are schematic side views showing the configuration of the temporary curing device according to the fourth embodiment.

  As shown in FIG. 24, the joining system 1A according to the fourth embodiment includes a temporary curing device 90 in the processing station 3A. The temporary curing device 90 is disposed adjacent to the second transport region 30 as with other devices.

  As shown in FIG. 25, the temporary curing device 90 includes a processing container 91 whose inside can be closed. A loading / unloading port (not shown) is formed on the side surface of the processing container 91 on the second transfer region 30 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  Inside the processing container 91, there is a heating mechanism 92, a first plate 93 that faces the plate surface of the polymerization substrate T on the support substrate S side, and a heating mechanism 94, and the substrate W to be processed in the polymerization substrate T is provided. A second plate 95 facing the side plate surface. FIG. 25 shows an example in which the first plate 93 is disposed below the second plate 95, but the first plate 93 may be disposed above the second plate 95.

  A pressurizing mechanism 96 is disposed inside the processing container 91. The pressurizing mechanism 96 includes a support member 961 that supports the first plate 93 and a moving mechanism 962 that moves the support member 961 in the vertical direction.

  The temporary curing device 90 configured as described above raises the first plate 93 using the pressurizing mechanism 96 after the superposed substrate T is placed on the first plate 93 by the second transport device 31. The surface of the superposed substrate T on the substrate W side is brought into contact with the second plate 95 to pressurize the superposed substrate T.

  Thereafter, the temporary curing device 90 uses the heating mechanism 92 and the heating mechanism 94 to heat the first plate 93 and the second plate 95 to a temperature equal to or higher than the curing temperature (about 180 ° C.) of the adhesive G, for example, 200 ° C. To do. The temporary curing device 90 stops heating by the heating mechanism 92 and the heating mechanism 94 before the adhesive G is completely cured. As a result, the adhesive G is cured to such an extent that it is not completely cured.

  Thus, the temporary curing process may be performed using a dedicated device instead of the bonding device 80. Unlike the bonding process, the temporary curing process does not need to be performed in a reduced pressure atmosphere, and thus the temporary curing apparatus 90 does not need to include a reduced pressure apparatus.

(Fifth embodiment)
In the above-described embodiment, the example in which the inspection unit 750 is arranged in the edge cut device 70 and the inspection / re-cleaning for the support substrate S is executed in the edge cut device 70 has been described. The cleaning may be performed, for example, in the second coating apparatus 50 that performs a bevel cleaning process on the support substrate S.

  This will be described with reference to FIG. FIG. 27 is a schematic side view showing the configuration of the second coating apparatus according to the fifth embodiment.

  As shown in FIG. 27, the second coating apparatus 50A according to the fifth embodiment further includes a solvent supply unit 720A and an inspection unit 750A.

  The solvent supply unit 720A and the inspection unit 750A are disposed above the collection cup 54. The solvent supply unit 720A is configured to be movable in the horizontal direction by a moving mechanism (not shown). Similarly to the solvent supply unit 720 shown in FIG. 7, an organic solvent supply source is connected to the solvent supply unit 720A via a supply device group including a valve, a flow rate control unit, and the like.

  The second coating apparatus 50A includes a substrate holding mechanism 52A. The drive unit 523A included in the substrate holding mechanism 52A rotates the support member 522 around the vertical axis and moves it in the vertical direction.

  The second coating apparatus 50A configured as described above performs the bevel cleaning process using the bevel cleaning unit 55, and then moves the support substrate S above the recovery cup 54 using the substrate holding mechanism 52A.

  Subsequently, the second coating apparatus 50A inspects the surface state of the bevel portion of the support substrate S using the inspection unit 750A while rotating the support substrate S using the substrate holding mechanism 52A. As a result of the inspection, when it is determined that the adhesive G remains on the bevel portion of the support substrate S, the second coating device 50A moves the solvent supply unit 720A to place it on the peripheral portion of the support substrate S. .

  Then, the second coating apparatus 50A uses the solvent supply unit 720A and discharges an organic solvent such as thinner toward the front and back surfaces of the peripheral portion including the bevel portion of the support substrate S, whereby the peripheral portion of the support substrate S The adhesive G adhering to is removed.

  As described above, the second coating apparatus 50 </ b> A that performs the bevel cleaning process on the support substrate S may continuously perform the inspection / recleaning process on the support substrate S.

  Here, the inspection / re-cleaning process is performed immediately after the bevel cleaning process. However, as in the first embodiment, the heating process is performed after the bevel cleaning, and then the inspection / re-cleaning process is performed. Also good. In such a case, the support substrate S after the bevel cleaning may be once taken out from the second coating apparatus 50A and carried into the heat treatment apparatus 60, and the support substrate S after the heat treatment may be carried into the second coating apparatus 50A again.

(Other embodiments)
In the embodiment described above, an example in which the inspection units 750 and 750A are CCD cameras has been described. However, the inspection units 750 and 750A do not necessarily have to be CCD cameras. Another example of the inspection unit will be described with reference to FIG. FIG. 28 is a schematic side view illustrating a configuration of an inspection unit according to a modification.

  As shown in FIG. 28, as the inspection unit 750B, for example, a transmissive photosensor can be used instead of the CCD camera.

  The inspection unit 750B includes a light emitting element 753 and a light receiving element 754. In FIG. 28, the light emitting element 753 is disposed on the bonding surface Wj side of the substrate W to be processed, and the light receiving element 754 is disposed on the non-bonding surface Wn side. This arrangement may be reversed.

  In the inspection unit 750B, light is emitted from the light emitting element 753 toward the light receiving element 754, and light that is not blocked by the substrate W to be processed enters the light receiving element 754, thereby detecting the shape of the bevel portion of the substrate W to be processed. be able to. The control unit 5 determines whether, for example, the release agent R remains on the bevel portion of the substrate W to be processed based on the detection result by the inspection unit 750B.

  In the embodiment described above, an example in which the bevel portion is re-cleaned when the adhesive G, the release agent R, or the protective agent P remains on the bevel portion of the support substrate S or the substrate W to be processed has been described. . However, in the bonding system, the bevel portion is re-cleaned only when the adhesive G, the release agent R, or the protective agent P remains in a specific portion of the bevel portion of the support substrate S or the substrate W to be processed. It may be done.

  For example, in the bonding system, when it is determined that the adhesive G is present at the place where the reference point used for horizontal position adjustment is formed in the bevel portion of the support substrate S, the bevel portion of the support substrate S is restored. It is good also as washing. Similarly, in the case of the substrate W to be processed, when it is determined that the release agent R or the protective agent P is present at the place where the reference point used for horizontal position adjustment is formed in the bevel portion of the substrate W to be processed. Further, the bevel portion of the substrate W to be processed may be re-cleaned. Thereby, the time required for the inspection / recleaning process can be shortened.

  Further, in the bonding system, when it is determined that the adhesive G is present in the notch portion used for horizontal orientation adjustment among the bevel portions of the support substrate S, the bevel portion of the support substrate S is re-cleaned. Also good. Similarly, for the substrate W to be processed, when it is determined that the release agent R or the protective agent P is present in the notch portion of the bevel portion of the substrate W to be processed, the bevel portion of the substrate W to be processed is re-cleaned. It is good. Thereby, the time required for the inspection / recleaning process can be shortened.

  In the embodiment described above, an example in which the support substrate S is an example of the first substrate and the target substrate W is an example of the second substrate has been described. However, the target substrate W is the first substrate, and the support The substrate S may be a second substrate. That is, the adhesive G may be applied to the substrate W and the release agent R may be applied to the support substrate S.

  In the above-described embodiment, the case where the pressurization mechanism 150 presses the substrate to be processed W and the support substrate S by lowering the second holding unit 120 has been described. You may pressurize the to-be-processed substrate W and the support substrate S by making the 1st holding | maintenance part 110 raise.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W Substrate S Support substrate T Polymerized substrate G Adhesive R Release agent P Protective agent 1 Bonding system 2 Loading / unloading station 3 Processing station 5 Control unit 40 First coating device 50 Second coating device 60 Heat treatment device 70 Edge cut device 80 Bonding device 90 Temporary curing device 431 Adhesive discharge unit 436 Protective agent discharge unit 531 Release agent discharge unit

Claims (11)

An application step of spreading an adhesive on the first substrate;
A bonding step of bonding the first substrate and the second substrate via the adhesive while heating the adhesive at a temperature lower than the curing temperature of the adhesive;
And a temporary curing step of heating the superposed substrate in which the first substrate and the second substrate are bonded to each other at a temperature equal to or higher than the curing temperature of the adhesive and shorter than the time for the adhesive to cure. Joining method. The coating process includes
The bonding method according to claim 1, wherein a thermosetting adhesive is spread on the first substrate. The temporary curing step includes
The bonding method according to claim 1, wherein the superposed substrate is heated from both sides of the first substrate side and the second substrate side. The temporary curing step includes
The bonding method according to claim 1, wherein the polymerization substrate is heated while pressurizing the polymerization substrate. The joining method as described in any one of Claims 1-4 including the accommodation process of accommodating the superposition | polymerization board | substrate after the said temporary hardening process to a conveyance container. The joining step and the temporary curing step are
A first holding unit that holds the first substrate; a second holding unit that holds the second substrate; a first heating mechanism that heats the first holding unit; and a second that heats the second holding unit. A heating mechanism, and a pressure mechanism that pressurizes the first substrate and the second substrate through the adhesive by relatively moving the first holding portion and the second holding portion. It is performed using a joining apparatus provided with these. The joining method as described in any one of Claims 1-5 characterized by the above-mentioned. The joining step includes
The first substrate and the second substrate are bonded via the adhesive in a state in which the adhesive is heated to a temperature closer to the softening temperature of the adhesive than the normal temperature and the curing temperature. The joining method according to claim 1. The joining step and the temporary curing step are
Heating the first holding part for holding the first substrate, the second holding part for holding the second substrate, and the first holding part to a temperature closer to the softening temperature of the adhesive than the normal temperature and the curing temperature. The first heating mechanism, the second heating mechanism for heating the second holding part to a temperature equal to or higher than the curing temperature, and the first holding part and the second holding part by relatively moving the first heating part. It is performed using the joining apparatus provided with the pressurization mechanism which makes 1 board | substrate and a said 2nd board | substrate contact through the said adhesive agent, and pressurizes them. Joining method. A processing station for performing predetermined processing on the first substrate and the second substrate;
A loading / unloading station for loading / unloading the first substrate, the second substrate, or a superposed substrate in which the first substrate and the second substrate are bonded to and from the processing station;
The processing station is
A coating apparatus for spreading an adhesive on the first substrate;
A bonding apparatus for bonding the first substrate and the second substrate via the adhesive while heating the adhesive at a temperature lower than the curing temperature of the adhesive;
And a temporary curing device that heats the superposed substrate in which the first substrate and the second substrate are bonded to each other at a temperature equal to or higher than a curing temperature of the adhesive and shorter than a time for the adhesive to cure. And joining system. The temporary curing device is:
A first plate having a heating mechanism and facing a plate surface on the first substrate side of the superposed substrate;
A second plate having a heating mechanism and facing a plate surface on the second substrate side of the superposed substrate;
The pressurization mechanism which pressurizes the superposition substrate by the 1st plate and the 2nd plate by moving the 1st plate and the 2nd plate relatively. The joining system described. A first holding unit for holding a first substrate coated with an adhesive;
A second holding unit for holding the second substrate;
A first heating mechanism for heating the first holding unit;
A second heating mechanism for heating the second holding part;
A pressurizing mechanism for pressing the first substrate and the second substrate through the adhesive by relatively moving the first holding unit and the second holding unit;
By controlling the first heating mechanism, the second heating mechanism, and the pressure mechanism, the first substrate and the second substrate are heated while the adhesive is heated at a temperature lower than the curing temperature of the adhesive. And a bonding process for bonding the first substrate and the second substrate after the bonding process at a temperature equal to or higher than a curing temperature of the adhesive and the bonding agent. And a controller that performs a temporary curing process in which heating is performed in a time shorter than the time for curing.

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