JP6034456B2 - Semiconductor light emitting device and light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device and a light emitting device.

  Applications of light-emitting devices capable of emitting visible light and white light are expanding to lighting devices, backlight sources of image display devices, display devices, and the like.

  In these applications, there is an increasing demand for miniaturization. For this reason, the use of a SMD (Surface-Mounted Device) type light emitting device in which a light emitting element chip is bonded onto a lead frame and molded using a resin makes it easy to reduce the size of electronic devices and the like.

  In addition, in order to replace a fluorescent lamp or an incandescent lamp with a lighting device using a semiconductor light emitting device with little power loss, it is required to increase mass productivity and reduce the price.

There is a technical disclosure example for further miniaturization (Patent Document 1). In this technical disclosure example, the wiring layer provided on the transparent substrate and the light emitting element chip are flip-chip connected, and can be driven from the outside via the columnar electrode and the ball. On the transparent substrate, the light emitting element chip and the columnar electrode are covered with a sealing material.
However, this example requires a wiring layer and columnar electrodes for bonding the light emitting element chip on the transparent substrate with high positional accuracy, and cannot be said to be sufficient to meet the requirements for downsizing and mass productivity.

JP 2006-128625 A

  Provided are a semiconductor light-emitting device and a light-emitting device that can be easily downsized and have improved mass productivity.

According to one aspect of the present invention, a semiconductor light emitting device has a first surface and a second surface opposite to the first surface, and does not include a substrate on the first surface side. A laminated body having a light emitting layer, a first electrode provided in the laminated body, and a second surface provided on a surface of the laminated portion of the light emitting layer in the laminated body on the second surface side. Two electrodes, a first insulating film having an opening communicating with the first electrode and the second electrode, a first metal wiring layer connected to the first electrode, and a second electrode connected to the second electrode A metal wiring layer, provided on the second surface side and having an externally connectable end, a first external connection electrode connected to the first metal wiring layer, and a second surface side A second external connection electrode having an externally connectable end and connected to the second metal wiring layer; A second insulating film provided between the part connection electrode and the second external connection electrode and constituting a support together with the first external connection electrode and the second external connection electrode; and the first of the stacked body And a phosphor layer provided without interposing a substrate between the laminate and the laminated body . A part of the first metal wiring layer is provided between the first insulating film and the second insulating film, and the light emitting layer in the stacked body is stacked via the first insulating film. It is provided in part with opposite case of the second surface of the surface of the portion Migihitsuji.

  A semiconductor light-emitting device and a light-emitting device that are easily downsized and have improved mass productivity are provided.

Schematic diagram of a light emitting device (WLP) according to the first embodiment Schematic sectional view of a modification of the first embodiment Process sectional drawing of the light-emitting device concerning 1st Embodiment Process sectional drawing of the light-emitting device concerning 1st Embodiment Process sectional drawing of the light-emitting device concerning 1st Embodiment The schematic diagram of the light-emitting device concerning 2nd Embodiment. Process sectional drawing of the light-emitting device concerning 2nd Embodiment Process sectional drawing of the manufacturing method of the 1st modification of 2nd Embodiment Process cross-sectional view showing lens forming method Process sectional drawing showing other examples of a lens formation method Process sectional drawing of the manufacturing method of the 2nd modification of 2nd Embodiment Process sectional drawing of the manufacturing method of the light-emitting device concerning 3rd Embodiment Process sectional drawing of the manufacturing method of the modification of 3rd Embodiment Schematic diagram of a light emitting device having a modified lens Schematic diagram of a light emitting device having a modified lens Schematic diagram of the light emitting device according to the fourth embodiment Process sectional drawing of the manufacturing method of the modification of 4th Embodiment Process sectional drawing of the manufacturing method of the modification of 4th Embodiment Schematic diagram showing a variation of the metal wiring layer pattern Schematic plan view showing a modification of the electrode pattern

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic diagram of a light emitting device according to a first embodiment of the present invention. That is, FIG.
(A) is sectional drawing, FIG.1 (b) is a bottom view, FIG.1 (c) is sectional drawing of a 1st modification.
The stacked body 12 has an upper layer 12a including a light emitting layer 12e and a lower layer 12b, and has an exposed first surface 12c and a second surface 12d opposite to the first surface 12c. doing. The upper layer 12a includes, for example, a p-type cladding layer, a light emitting layer 12e, and an n-type cladding layer. The lower layer 12b is, for example, n-type and serves as a current lateral path. However, the conductivity type is not limited to this, and may be a reverse conductivity type.

  The p-side electrode 14 provided on the surface of the upper layer 12a of the multilayer body 12 is connected to the p-side metal wiring layer 24a through a p-side seed metal (seed metal) 22a. The n-side electrode 16 is connected to the n-side metal wiring layer 24b through the n-side seed metal 22b. Note that an insulating film 20 made of an organic material or an inorganic material is filled between the seed metals 22a and 22b and the second surface 12d.

  A p-side metal pillar 26a is provided on the p-side metal wiring layer 24a, and an n-side metal pillar 26b is provided on the n-side metal wiring layer 24b. A (reinforcing) resin 28 is provided around these. The surface of the metal pillar 26 is filled so as to be exposed at least. Even if the laminate 12 is thin, the mechanical strength can be maintained by thickening the metal pillars 26a and 26b and the reinforcing resin 28. The metal pillar 26 can reduce the stress applied to the stacked body 12 through the mounting terminals.

  The material of the metal wiring layers 24a and 24b and the metal pillars 26a and 26b can be copper, gold, nickel, silver, or the like. Among these, copper having good thermal conductivity, high migration resistance, and excellent adhesion with an insulating film is more preferable. In the following embodiments, the metal wiring layer 24 and the metal pillar 26 are made of copper. However, the present invention is not limited to copper.

The p-side seed metal 22 a, the p-side copper wiring layer 24 a, and the p-side copper pillar 26 a constitute a p-side lead electrode that can be connected to the p-side electrode 14 provided in the stacked body 12.
Further, the n-side seed metal 22b, the n-side copper wiring layer 24b, and the n-side copper pillar 26b constitute an n-side lead electrode that can be connected to the n-side electrode 16 provided in the stacked body 12.

  In FIG. 1, the diameter of the copper pillar 26 is larger than the diameter of the opening portion of the copper wiring layer 24 in contact with the p-side electrode 14 and the n-side electrode 16. In this case, the bottom area of the copper pillar 26 is larger than the area of the opening portion of the copper wiring layer 24 that is in contact with the p-side electrode 14 and the n-side electrode 16. .

  The light from the light emitting layer 12e can be emitted mainly from the first surface 12c of the stacked body 12 to the upper side in FIG.

  FIG. 1A and FIG. 1B show a light emitting device using WLP (Wafer-Level Package). That is, it corresponds to a light emitting device when one block represented by a broken line in FIG. Since the wafer level is assembled in this way, a CSP (Chip Size Package) in which the size of the light emitting device is reduced to a bare chip size is facilitated. Further, the sealing resin can be omitted, and it is easy to reduce the thickness. Such an embodiment can be called a WLP light emitting device.

FIG.1 (c) is the light-emitting device concerning the 1st modification.
In the laminated body 12, the separation part 12f of the chip to be singulated is removed, and it becomes easy to suppress the cracking of GaN or the like which is thin, hard and brittle.

FIG. 2 is a schematic cross-sectional view of a light emitting device according to another modification of the first embodiment. That is, FIG. 2A is a second modification, and FIG. 2B is a third modification.
In the second modification of FIG. 2A, when the light emitting layer 12e is a nitride-based semiconductor, the stacked body 12 is crystal-grown on a light-transmitting substrate 10 such as sapphire, or a temporary substrate such as GaAs. In many cases, after crystal growth is performed, the crystal is transferred to the translucent substrate 10 using a wafer bonding method or the like. FIG. 2A shows a WLP light emitting device in a state where the translucent substrate 10 is left. In many cases, the thickness of the substrate in the crystal growth process is increased to several hundred μm to reduce cracks and warpage. In this embodiment, since the mechanical strength can be increased by filling the copper pillars 26 and the reinforcing resin 28, the translucent substrate 10 can be thinned by grinding.

  In the third modification of FIG. 2B, thick copper wiring layers 24c and 24d are used as lead electrodes without providing copper pillars. In this way, the structure and manufacturing process can be simplified.

3 to 5 are diagrams for explaining a reinforcing resin forming step in the method for manufacturing the light emitting device according to the first embodiment.
FIG. 3 shows from the light emitting element formation process to the seed metal film formation process.
On the first surface 10a of the translucent substrate 10 made of sapphire or the like, for example, a laminated body 12 having a lower layer 12b including a buffer layer and an n-type layer and an upper layer 12a is formed. The first surface 12c of the stacked body 12 is adjacent to the first surface 10a of the translucent substrate 10 and is substantially flat. Further, the second surface (broken line) 12d of the stacked body 12 includes a step including the surface of the upper layer 12a and the surface of the lower layer 12b exposed by removing the upper layer 12a.

  When the p-side electrode 14 is formed on the surface of the upper layer 12a and the n-side electrode 16 is formed on the surface of the lower layer 12b, FIG. 3A is obtained. FIG. 3B shows an electrode pattern. An insulating film 20 is formed so as to cover the p-side electrode 14 and the n-side electrode 16, and openings (first opening and second opening are formed so that a part of each of the p-side electrode 14 and n-side electrode 16 is exposed. ) 20a and 20b are formed (FIG. 3C). Further, a seed metal 22 made of Ti / Cu or the like is formed by using, for example, a sputtering method (FIG. 3D).

  For example, the n-side electrode 16 can be a laminate of Ti / Al / Pt / Au, and the p-side electrode 14 can be a laminate of Ni / Al (or Ag) / Au. In the case of the p-side electrode 14, when a highly reflective film such as Al or Ag is sandwiched, it becomes easy to take out a high light output by reflecting light emitted from the light emitting layer 12 e upward. Further, since the seed metal 22 is provided, the Au used as a pad can be omitted.

FIG. 4 is a process cross-sectional view illustrating a copper wiring layer forming process.
For example, the photoresist 40 is patterned on the seed metal 22 (FIG. 4A), and the copper wiring layer 24 is selectively formed by electrolytic plating using the patterned photoresist 40 as a mask. Thus, the copper wiring layers 24a and 24b separated from each other are formed (FIG. 4B). At this time, it is preferable to form the copper wiring layers 24a and 24b to such an extent that the bottom areas of the copper wiring layers 24a and 24b are larger than the diameters or bottom areas of 20a and 20b. In this case, the thin seed metal 22 becomes a current path in the electrolytic plating process. After that, when the photoresist 40 is removed using an ashing method or the like, the structure shown in FIG.

FIG. 5 shows a copper pillar and reinforcing resin forming step.
As shown in FIG. 5A, the thick photoresist is patterned to form an opening 42a on the p-side copper wiring layer 24a and an opening 42b on the n-side copper wiring layer 24b. Subsequently, a p-side copper pillar 26a connected to the p-side electrode 14 and an n-side copper pillar 26b connected to the n-side electrode 16 are respectively formed by electrolytic plating (FIG. 5B). Also in this case, the thin seed metal 22 becomes a current path in the electrolytic plating process. If the thickness of the copper pillar 26 is in the range of 10 to several hundred μm, for example, the strength of the light emitting device can be maintained even if the translucent substrate 10 is separated. The openings 42a and 42b may be formed in an insulating film.

  Further, the resist layer 42 is removed by using an ashing method or the like, and the exposed region of the seed metal 22 is removed by, for example, wet etching to separate the p-side seed metal 22a and the n-side seed metal 22b (FIG. 5). (C)).

  Subsequently, a reinforcing resin 28 is formed around the copper pillars 26a and 26b so as to have a thickness substantially equal to or less than the thickness of the copper pillars 26a and 26b. (FIG. 5D). In this way, the WLP type light emitting device of FIG. 2A is completed. Further, when the translucent substrate 10 is removed, the WLP type light emitting device shown in FIG.

  Here, the layer made of resin and metal is flexible, and the metal is plated at substantially normal temperature, so that the residual stress generated between the transparent substrate 10 is relatively small. Conventionally, as a method of separating the laminate 12 from the translucent substrate 10 at the wafer level, for example, after bonding to a silicon substrate on which a metal layer is formed using Au—Sn solder at a high temperature of 300 ° C. or higher, GaN is used. In this conventional method, both the light-transmitting substrate and the silicon substrate having different coefficients of thermal expansion are rigid and are heated at a high temperature. Due to the bonding, a large residual stress remained between the two substrates. As a result, since the residual stress is locally released from the separation portion when the separation is started by irradiating the laser, there is a problem that the thin and brittle laminate 12 is cracked. On the other hand, in this embodiment, since the laminated body 12 is separated in a state where the residual stress is small and is fixed to a flexible support body, defects such as cracks of the laminated body 12 do not occur, and the yield is high. It can be manufactured.

  In addition, when the laminate 12 is made of a nitride material, the chip size is usually several hundred μm to several mm. However, in this embodiment of the WLP type, a small light emitting device having a size close to the chip size may be used. Easy.

  With such a manufacturing method, it is not necessary to use a mounting member such as a lead frame or a ceramic substrate, and a wiring process and a sealing process can be performed at the wafer level. In addition, it becomes possible to inspect at the wafer level. For this reason, the productivity of the manufacturing process can be increased, and as a result, the price can be easily reduced.

FIG. 6 is a schematic view of an individualized light emitting device according to the second embodiment of the present invention. 6A is a cross-sectional view, FIG. 6B is a top view, FIG. 6C is a bottom view, and FIG. 6D is a cross-sectional view of a modification.
In addition to the structure of FIG. 1A representing the first embodiment, solder balls 36a are provided on the surface of the copper pillar 26a, and solder balls 36b are provided on the surface of the copper pillar 26b in a BGA (Ball Grid Array) shape. . Although the material of the solder ball 36 is not limited, for example, SnAg can be lead-free.

  On the other hand, the phosphor layer 30 is provided on the first surface 12c of the multilayer body 12 with a substantially uniform thickness, so that the light emitted from the light emitting layer 12e can be absorbed and wavelength converted light can be emitted. For this reason, the mixed light of the light emitted from the light emitting layer 12e and the wavelength converted light can be emitted. When the light emitting layer 12e is made of a nitride system, white or a light bulb color can be obtained as a mixed color of blue light as emitted light and yellow light of wavelength converted light from a yellow phosphor.

  In the present embodiment, the phosphor layer 30 having a substantially uniform thickness is provided in the vicinity of the light emitting layer 12e, and is incident on the phosphor layer 30 before the emitted light diverges. It becomes easy to reduce the color unevenness by making the spread of light close to the light.

  Further, as shown in FIG. 6A, when a convex lens 32 made of quartz glass or the like is further provided on the phosphor layer 30, mixed light such as white or light bulb color is condensed by the convex lens 32 so as to have higher luminance. Is easy. Further, since the convex lens 32 is provided in the vicinity of the light emitting layer 12e without using a sealing resin, the size of the lens can be reduced and the miniaturization is facilitated.

  In this manner, the light emitting device can be easily downsized by WLP. Further, since the convex lens 32 can be formed in a wafer state, an assembling process with high productivity is possible, and the cost can be easily reduced. In the present embodiment, by providing the solder balls 36 on the surface of the copper pillar 26, the mounting to the mounting board can be facilitated.

  In the modification shown in FIG. 6D, a concave lens 33 is provided instead of the convex lens so that the emitted light can be diverged. For example, when used for a backlight light source, it is necessary to make the emitted light incident from the side surface of the light guide plate so as to spread along the surface of the light guide plate. In this case, a concave lens 33 may be used.

FIG. 7 is a process cross-sectional view of the method for manufacturing the light emitting device according to the second embodiment.
FIG. 7A shows the light emitting device (WLP) 5 from which the translucent substrate 10 is peeled off.

  The phosphor layer 30 is formed on the exposed first surface 12 c of the stacked body 12. The phosphor layer 30 is formed by a sputtering method, an inkjet method, a method in which phosphor particles are mixed and applied to a silicone resin, a method in which phosphor particles are mixed and applied in a liquid glass, and the like, by several to several hundred μm. It can be formed with a thickness within the range (FIG. 7B). Subsequently, a convex lens 32 is formed using quartz glass or the like (FIG. 7C), and a solder ball 36 is formed on the surface of the copper pillar 26 (FIG. 7D). In this way, a light emitting device using WLP is completed. Furthermore, although it divides into pieces by a dicing method (FIG. 7E), since the translucent substrate 10 is removed, the singulation is easy and a cutting method is a machine using a diamond blade or the like. It is possible to use means such as cutting, cutting by laser irradiation, or cutting with high-pressure water.

FIG. 8 is a process cross-sectional view of the manufacturing method of the first modification of the second embodiment.
In the process cross-sectional view of FIG. 7, the lower layer 12 b of the stacked body 12 is continuous along the first surface 10 a of the translucent substrate 10. This is because if the laminate 12 is formed on the entire surface of the wafer, it becomes easier to separate the laminate 12 made of GaN from the translucent substrate 10 by laser irradiation. In this case, the wafer including the laminate 12 is preferably fixed on a flat tool or jig by vacuum suction or adhesion.

  In the present modification shown in FIG. 8, after separating the light-transmitting substrate 10, the wafer including the stacked body 12 is fixed, for example, by irradiating the laser again to remove the light emitting elements between the stacked bodies 12 (FIG. 8 ( a)). Further, the phosphor layer 30, the convex lens 32, and the solder ball 36 are formed (FIG. 8B) and separated into individual pieces (FIG. 8C). Alternatively, the wafer including the stacked body 12 may be fixed to a jig that can be detached from the laser irradiation apparatus, and the stacked body 12 may be separated by a combination of photolithography and etching. Since the rigid and thin laminated body 12 is separated into small sizes, the risk of the laminated body 12 breaking during subsequent handling of the wafer is greatly reduced. Furthermore, since the laminated body 12 is separated into small sizes even after being separated into individual pieces, the laminated body 12 is difficult to break, and the entire package becomes flexible, and the reliability of the connection point after mounting is improved. . Further, the warpage of the package is reduced, and mounting is facilitated. Further, it can be mounted on a curved object.

FIG. 9 is a process cross-sectional view illustrating an example of a lens forming method.
A dot pattern made of a photoresist 50 is formed on a quartz glass 60 formed on a support 62 such as a semiconductor laminate or a phosphor layer (FIG. 9A). Low resist ratio processing with respect to resist is performed in stages such as a first step (FIG. 9B), a second step (FIG. 9C), and a third step (FIG. 9D). In each step, the resist dot pattern is reduced by etching, and an inclination is generated in the periphery of the photoresist 50.

  For this reason, after resist stripping, the slope of the cross section becomes steeper as it goes downward (FIG. 9E). Therefore, the lens is completed when the surface is smoothed by isotropic etching using a CDE (Chemical Dry Etching) method or a wet etching method (FIG. 9F). In this way, convex or concave lenses can be formed on the light emitting device.

FIG. 10 is a process cross-sectional view illustrating another example of a lens forming method.
That is, it is possible to use the nanoimprint method as shown in the figure. A SOG (Spin On Glass) 61 or the like having the property of being vitrified by heating is applied onto the support 62 by spin coating or the like (FIG. 10A), and a nano stamper 53 shaped like a lens is formed. After pressing to form a lens shape (FIG. 10B), the nanostamper 53 is peeled off, and the SOG 61 is heated to vitrify (FIG. 10C). According to this method, since the shape of the nano stamper 53 can be arbitrarily designed, a lens having any shape can be easily manufactured.

  FIG. 11 is a process cross-sectional view of the manufacturing method of the second modified example of the second embodiment.

In this modification, the convex lens 32 is first formed on the first surface 12c of the laminate 12 (FIG. 11A), and then the phosphor layer 31 is formed on the convex lens 32 (FIG. 11B). . Subsequently, solder balls 36 are formed on the surface of the copper pillar 26 (FIG. 11C), and the light emitting device 6 is obtained by dividing into individual pieces (FIG. 11D).
In the separated light emitting device 6 of the second embodiment and the modification accompanying it, the light emitting device can be made thinner by removing the substrate of the light emitting device by WLP.

FIG. 12 is a process cross-sectional view of the method for manufacturing the light emitting device according to the third embodiment.
In FIG. 2A, which is a modification of the first embodiment, the thickness of the translucent substrate 10 can be reduced by grinding. For example, when about several tens of μm is left (FIG. 12A), it becomes easier to increase the mechanical strength than the structure in which the translucent substrate 10 is entirely removed. Subsequently, formation of the phosphor layer 30 (FIG. 12B), formation of the convex lens 32 (FIG. 12C), formation of the solder ball 36 (FIG. 12D), and separation into individual pieces (FIG. 12E). Perform the process.

FIG. 13 is a process cross-sectional view of the manufacturing method of the modification of the third embodiment.
As shown in FIG. 13A, after the convex lens 32 is formed, the phosphor layer 31 is formed (FIG. 13B), the solder ball 36 is formed (FIG. 13C), and separated into individual pieces (FIG. 13). 13 (d)).
In the light emitting device of the third embodiment and the modification thereof, by leaving the light-transmitting substrate 10 to be thin, it is easy to increase the mechanical strength while keeping the thickness thin.

FIG. 14 is a schematic diagram of a light emitting device having a modified lens. 14A is a sectional view with one convex lens, FIG. 14B is a sectional view with one concave lens, and FIG. 14C is a top view.
Although the lens is an array lens in the first to third embodiments, the present invention is not limited to this. A single lens as shown in FIG. 14 may be used. With a single lens, the optical design and manufacturing process can be simplified.

FIG. 15 is a schematic diagram of a light emitting device having a lens according to another modification.
As shown in the schematic plan views of FIGS. 15A and 15B, lenses 32a, 32b, 32c, 32d, and 32e having different sizes may be arranged. By arranging small lenses in the gaps between large lenses, it is possible to increase the area covered by the lenses. Further, as shown in the schematic perspective view of FIG. 15C, a lens 33a having a square outer shape may be used.

FIG. 16 is a schematic diagram of a light emitting device according to the fourth embodiment. 16A is a cross-sectional view, and FIG. 16B is a bottom view.
In this embodiment, the laminated bodies adjacent to each other are separated. Further, patterning is performed by connecting the first p-side electrode 14 of the first stacked body and the second n-side electrode 16 of the adjacent second stacked body. Furthermore, it is not necessary to remove the seed metal 22 between the first stacked body and the second stacked body. In this way, the seed metal 22 and the copper wiring layer 24 are connected between the first and second light emitting elements. That is, two light emitting elements can be connected in series. Such a series connection facilitates high output. Of course, the number of series connections is not limited to two, and a multi-stage series connection is possible. Moreover, it is also possible to connect the laminated bodies adjacent to each other in the direction intersecting with the first and second laminated bodies and connect them in parallel.

  FIG. 16 shows the seed metal 22 and the copper wiring layer 24 connected to each other between 2 × 2 light emitting elements, but they are not necessarily separated outside the 2 × 2 light emitting elements. There is no need. If this shape is continuous over the entire wafer surface, the light emitting element can be cut out in arbitrary units.

17 and 18 are process cross-sectional views of a manufacturing method according to a modified example of the fourth embodiment.
The translucent substrate 10 may be separated for each light emitting element. In this case, since each light emitting element is protected by the rigid translucent substrate 10, a highly reliable structure can be obtained. Furthermore, as this manufacturing method, as shown in FIG. 17A, it is possible to form a groove 10 c from the light emitting element formation surface 10 a side in the gap between the light emitting elements of the translucent substrate 10. The groove 10c can be formed, for example, before or after the light emitting element forming step, and a technique such as etching, laser processing, blade cutting, or the like can be used. In this way, when the light-transmitting substrate 10 is then ground thinly (FIG. 17 (e)), the rigid light-transmitting substrate 10 is subdivided into individual pieces, so there is a risk of breaking. Can be greatly reduced. In addition, since a portion having no rigid light-transmitting substrate is cut even when separated into packages (FIG. 18), high productivity and yield can be realized. Further, even after the separation, the translucent substrate 10 and the laminate 12 are separated into small sizes, so that the translucent substrate 10 and the laminate 12 are not easily broken, and the entire package is flexible. Thus, the reliability of the connection point after mounting is improved. Further, the warpage of the package is reduced, and mounting is facilitated. Further, it can be mounted on a curved object.

FIG. 19 is a schematic diagram illustrating a modification of the pattern of the copper wiring layer.
In FIG. 16, since the separation region 21 between the p-side electrode 14 and the n-side electrode 16 is linear, there is a risk that the wafer breaks in the separation region 21, but the p-side electrode 14 and the n-side electrode When the separation part (broken line) from the electrode 16 is meandered as shown in FIG. 19, it is reinforced by the protruding part of the copper wiring layer 24, so that the mechanical strength is maintained even if the transparent substrate 10 is thinned by grinding. It becomes easy. In FIG. 19A, the copper pillars 26 are arranged at substantially lattice positions, but the arrangement shown in FIG. Of course, the same effect can be obtained even when the translucent substrate 10 is separated.

  FIG. 20 is a schematic plan view illustrating a modification of the electrode pattern of the light emitting element. That is, FIG. 20A is a basic pattern for two chips, and FIGS. 20B to 20D are modifications thereof. Since the region where the current flows in the vertical direction of the chip emits light, if the area of the upper layer 12a including the light emitting layer 12e is widened, high light output can be achieved. In this case, the area of the lower layer 12b exposed by removing the upper layer 12a is an n-type non-light-emitting region, and it is easy to achieve a low contact resistance with the n-side electrode 16 even in a small area.

  Although it is difficult to make the area of the n-side electrode 16 equal to or smaller than the size of the bump when flip-chip mounting, in this embodiment, the copper wiring layer 24 is used even if the area of the n-side electrode 16 is reduced. Can be connected to a lead electrode having a large area. If the area of the extraction electrode connected to the p-side electrode 14 and the size of the extraction electrode connected to the n-side electrode 16 are substantially the same, it can be mounted on the substrate in good balance via the solder balls 36.

  In FIG. 20B, an upper layer 12a including a light emitting layer 12e at the center and an n-type lower layer 12b are disposed so as to surround the upper layer 12a. In this way, the current supply path can be shortened, and the light emitting area is in the center, so that it is easy to match the optical axis of the lens.

  In FIG. 20C, the lower layer 12b is exposed at a lattice-like position, an n-side electrode 16 is provided, and a p-side electrode 14 is provided so as to surround it. In this way, the current path can be made shorter.

  In FIG. 20D, the p-side electrode 14 is arranged at the center, and the n-side electrode 16 is arranged at the four corners surrounding it. In this way, the light emitting area can be made larger, and the light emitting area becomes the central portion, so that it is easy to match the optical axis of the lens.

In 1st-4th embodiment and those modifications, the light-emitting device reduced in size close | similar to the bare chip size is provided. These light emitting devices can be widely used for lighting devices, backlight light sources of image display devices, display devices, and the like.
In addition, in the manufacturing method, assembly and inspection processes at the wafer level are possible, so high productivity is easy. For this reason, price reduction can be aimed at.

  The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to these. Various persons skilled in the art have various types of light-emitting elements, laminates, translucent substrates, seed metals, metal wiring layers, metal pillars, reinforcing resins, phosphor layers, lenses, electrode sizes, shapes, materials, and arrangements constituting the present invention. Even if the design is changed, it is included in the scope of the present invention without departing from the gist of the present invention.

  Further, according to yet another aspect of the present invention, the method further comprises a step of thinning the light-transmitting substrate or removing the light-transmitting substrate after the step of forming the resin. A method for manufacturing a light emitting device is provided.

  Moreover, the manufacturing method of the light-emitting device further provided with the process of removing a translucent board | substrate after the process of forming resin, and isolate | separating the exposed laminated body is provided.

  In addition, the step of forming a groove on the first surface side of the translucent substrate before the step of forming the insulating film on the second surface side of the laminate, and the step of forming the translucent substrate after the step of forming the resin There is provided a method for manufacturing a light-emitting device, further comprising a step of thinning the layers until they are separated.

  Of the second surface opposite to the first surface of the translucent substrate, the surface of the translucent substrate ground from the second surface side, and the second surface of the laminate There is provided a method for manufacturing a light emitting device, comprising the step of forming a phosphor layer on any of the above.

  In addition, one of the p-side electrode and the n-side electrode is provided on the non-light-emitting region of the stacked body, and the area of either one is smaller than the area of the connected metal wiring layer. The light emitting device is provided.

  A phosphor layer provided on the first surface side of the laminate, capable of absorbing the emitted light from the light emitting layer and emitting wavelength-converted light, and provided on the first surface side of the laminate, at least emitting There is provided a light-emitting device, further comprising a lens that can collect or diverge light, and capable of emitting emitted light and wavelength-converted light.

  5 Light-Emitting Device (WLP), 6 Light-Emitting Device (Individualized), 10 Translucent Substrate, 12 Stacked Body, 14 p-side Electrode, 16 n-side Electrode 20 Insulating Film, 22, 22a, 22b, Seed Metal 24, 24a 24b, copper wiring layers 26, 26a, 26b, copper pillars 28, 28a, 28b, reinforcing resin 30 phosphor layers, 32 lenses, 36 solder balls

Claims (22)

A laminated body having a first surface and a second surface opposite to the first surface, the first surface side not including a substrate, and having a light emitting layer;
A first electrode provided in the laminate;
A second electrode provided on a surface on the second surface side of the stacked portion of the light emitting layer in the stacked body;
A first insulating film having an opening communicating with the first electrode and the second electrode;
A first metal wiring layer connected to the first electrode;
A second metal wiring layer connected to the second electrode;
A first external connection electrode provided on the second surface side and having an externally connectable end and connected to the first metal wiring layer;
A second external connection electrode provided on the second surface side and having an externally connectable end and connected to the second metal wiring layer;
A second insulating film provided between the first external connection electrode and the second external connection electrode and constituting a support together with the first external connection electrode and the second external connection electrode;
A phosphor layer provided on the first surface side of the laminate without interposing a substrate between the laminate and
With
A part of the first metal wiring layer is provided between the first insulating film and the second insulating film, and the light emitting layer in the stacked body is stacked via the first insulating film. the semiconductor light emitting device which is provided in a portion with opposite case of the second surface of the surface of the portion Migihitsuji. A laminated body having a first surface and a second surface opposite to the first surface, the first surface side not including a substrate, and having a light emitting layer;
A first electrode provided in the laminate;
A second electrode provided on a surface on the second surface side of the stacked portion of the light emitting layer in the stacked body;
A first insulating film having an opening communicating with the first electrode and the second electrode;
A first metal wiring layer connected to the first electrode;
A second metal wiring layer connected to the second electrode;
A first external connection electrode provided on the second surface side, having an end portion capable of external connection, connected to the first metal wiring layer, and thicker than the stacked body;
A second external connection electrode that is provided on the second surface side and has an end that can be connected externally, is connected to the second metal wiring layer, and is thicker than the stacked body;
A second insulating film provided between the first external connection electrode and the second external connection electrode and thicker than the stacked body;
A phosphor layer provided on the first surface side of the laminate without interposing a substrate between the laminate and
With
A part of the first metal wiring layer is provided between the first insulating film and the second insulating film, and the light emitting layer in the stacked body is stacked via the first insulating film. the semiconductor light emitting device provided in a part the opposite case of the second surface of the surface of the portion Migihitsuji. The laminate has a side surface continuing from the first surface,
The first insulating film is further provided outside the side surface of the stacked body,
The semiconductor light emitting device according to claim 1, wherein the phosphor layer is also provided on an upper side of the first insulating film provided on the outer side of the side surface of the stacked body. The laminate has a side surface continuing from the first surface,
The semiconductor light emitting device according to claim 1, wherein the phosphor layer is also provided on the side surface of the stacked body.   The semiconductor light-emitting device according to claim 1, wherein a side surface of the phosphor layer and a side surface of the second insulating film are aligned. A laminated body having a first surface and a second surface opposite to the first surface, the first surface side not including a substrate, and having a light emitting layer;
A first electrode provided in the laminate;
A second electrode provided on a surface on the second surface side of the stacked portion of the light emitting layer in the stacked body;
A first insulating film having an opening communicating with the first electrode and the second electrode;
A first metal wiring layer connected to the first electrode;
A second metal wiring layer connected to the second electrode;
A first external connection electrode provided on the second surface side and having an externally connectable end and connected to the first metal wiring layer;
A second external connection electrode provided on the second surface side and having an externally connectable end and connected to the second metal wiring layer;
A second insulating film provided between the first external connection electrode and the second external connection electrode and constituting a support together with the first external connection electrode and the second external connection electrode;
A resin layer provided on the first surface side of the laminate without interposing a substrate between the laminate and
With
A part of the first metal wiring layer is provided between the first insulating film and the second insulating film, and the light emitting layer in the stacked body is stacked via the first insulating film. the semiconductor light emitting device which is provided in a portion with opposite case of the second surface of the surface of the portion Migihitsuji. A laminated body having a first surface and a second surface opposite to the first surface, the first surface side not including a substrate, and having a light emitting layer;
A first electrode provided in the laminate;
A second electrode provided on a surface on the second surface side of the stacked portion of the light emitting layer in the stacked body;
A first insulating film having an opening communicating with the first electrode and the second electrode;
A first metal wiring layer connected to the first electrode;
A second metal wiring layer connected to the second electrode;
A first external connection electrode provided on the second surface side, having an end portion capable of external connection, connected to the first metal wiring layer, and thicker than the stacked body;
A second external connection electrode that is provided on the second surface side and has an end that can be connected externally, is connected to the second metal wiring layer, and is thicker than the stacked body;
A second insulating film provided between the first external connection electrode and the second external connection electrode and thicker than the stacked body;
A resin layer provided on the first surface side of the laminate without interposing a substrate between the laminate and
With
A part of the first metal wiring layer is provided between the first insulating film and the second insulating film, and the light emitting layer in the stacked body is stacked via the first insulating film. the semiconductor light emitting device which is provided in a portion with opposite case of the second surface of the surface of the portion Migihitsuji. And the side surface of the resin layer, the semiconductor light-emitting device according to claim 6 or 7 and the side surface of the second insulating film are aligned. The first electrode and the second electrode, the semiconductor light emitting device according to any one of the second billing and a surface section 1-8.   7. The semiconductor light emitting device according to claim 1, wherein thicknesses of the first external connection electrode, the second external connection electrode, and the second insulating film are thicker than a thickness of the stacked body. The second insulating film, a semiconductor light emitting device according to any one of claims 1-10 which surrounds the side surface of the side surface and the second external connection electrode of the first external connection electrode. The first insulating film, a semiconductor light emitting device according to any one of claims 1 to 11 surrounding the periphery of the laminate. The second insulating film, a semiconductor light emitting device according to any one of claims 1 to 12 including resin. The first insulating film, wherein the first electrode between the first metal wiring layer, and the second electrode and the second metal wiring layer claim wherein is also provided 1 between 13 The semiconductor light-emitting device as described in any one. At least one of the first metal wiring layer and the second metal wiring layer has an area of a surface opposite to the surface in contact with the first electrode or the second electrode, so that the first electrode or the second electrode has an area. the semiconductor light emitting device according to any one of claims 1-14 is larger than the area of the surface contact. The first electrode is provided in a portion of the stacked body where the light emitting layer is not stacked,
The area of the first metal interconnection layer opposite the first electrode and the contact surface can be of any claims 1-14 is larger than the area of said first metal wiring layer of the surface in contact with the first electrode The semiconductor light-emitting device as described in any one. The first electrode has a laminated structure of a plurality of metal layers,
The second electrode, the semiconductor light emitting device according to any one of claims 1-16 having a laminated structure of a plurality of metal layers including a reflective film having reflectivity with respect to light emitted from the light emitting layer. The semiconductor light emitting device according to any one of claims 1 to 17 wherein the end of said end portion and said second external connection electrode of the first external connection electrode comprising solder. Wherein the first metal wiring layer and the second metal wiring layer and a portion separating the semiconductor light emitting according to any one of the second claim meanders when viewed from the side 1-18 apparatus. A plurality of the laminates are provided separately from each other;
4. The semiconductor light emitting device according to claim 3, wherein the phosphor layer is continuously provided on an upper side of the first insulating film provided on the side surface and on the first surface side of the plurality of stacked bodies. . 21. The semiconductor light emitting device according to claim 20, wherein the second insulating film is continuously provided on the second surface side of the plurality of stacked bodies. A semiconductor light-emitting device according to any one of claims 1 to 21 ,
A mounting substrate electrically connected to the end of the first external connection electrode and the end of the second external connection electrode;
A light emitting device comprising: