JP6022373B2 - Thin substrate processing equipment - Google Patents

Description

  The technology of the present disclosure relates to a thin substrate processing apparatus that processes the surface of a thin substrate including a printed circuit board and a film substrate.

  In a mounting process for mounting electronic components on a mounting substrate, an adhesion layer serving as a base of wiring connected to a semiconductor element and a seed layer for forming wiring by plating are formed. For example, a plating method or a sputtering method is used to form each layer (see, for example, Patent Document 1).

JP 2003-197811 A

  By the way, in recent years, with the increase in the density of wiring, the use of a sputtering method rather than a plating method has been studied particularly for forming a seed layer. Furthermore, for the purpose of reducing the weight and thickness of electronic devices, it is being considered to reduce the thickness of the mounting substrate and to adopt a thin film substrate having a thickness of about several tens to several hundreds of μm as the mounting substrate. . A thin substrate such as a printed circuit board or a film substrate has a lower temperature at which the shape of the substrate changes compared to a glass substrate that has been widely used. Therefore, when the adhesion layer or the seed layer is formed by sputtering, the high-energy sputtered particles reach the thin substrate, so that the temperature of the thin substrate is increased to such an extent that the shape of the thin substrate changes. . Such problems are not limited to the case where a thin film is formed on a thin substrate by sputtering. For example, surface treatment such as reverse sputtering, etching using plasma, and ion bombardment treatment using an ion gun is applied to a thin substrate. This is also common when performed.

  An object of the technology of the present disclosure is to provide a thin substrate processing apparatus capable of suppressing an increase in temperature of a thin substrate.

One aspect of the thin substrate processing apparatus according to the technique of the present disclosure includes a substrate processing unit that processes a thin substrate, and a cooling unit that cools the thin substrate. The cooling unit cools the thin substrate by supplying gas to the opposite side of the processing surface of the thin substrate on which the processing by the substrate processing unit is performed , and a tray is attached to the outer periphery of the thin substrate The tray pulls the thin substrate from the center of the thin substrate toward the outer periphery of the thin substrate, and the cooling unit supplies the gas in a state where the thin substrate is pulled .

According to one aspect of the thin substrate processing apparatus in the technology of the present disclosure, even when the thin substrate is heated by the processing of the substrate processing unit, the cooling is performed by supplying the gas to the thin substrate and cooling it. The temperature of the thin substrate is less likely to be raised compared to a configuration that is not broken.
Further, according to one aspect of the thin substrate processing apparatus in the technology of the present disclosure, since the shape of the thin substrate is suppressed from being changed by the supply of the cooling gas, the processing amount of the thin substrate varies in the plane of the thin substrate. It can be suppressed.

Other aspects of the thin substrate processing apparatus in the art of the present disclosure, before Symbol cooling unit, the seal member is attached to the surface facing to the tray. The cooling unit supplies the gas to a cooling space sealed by the seal member.

  According to another aspect of the thin substrate processing apparatus of the technology of the present disclosure, gas is supplied to the entire surface of the thin substrate opposite to the processing surface by supplying the gas to the cooling space. Therefore, the temperature of the thin substrate is less likely to be increased as compared with a configuration in which a part of the surface of the thin substrate opposite to the processing surface is cooled.

  In another aspect of the thin substrate processing apparatus in the technology of the present disclosure, the substrate processing unit includes a film forming unit that forms a thin film on the thin substrate by sputtering, a reverse sputtering processing unit that applies a bias voltage to the thin substrate, One of an ion processing unit that performs ion bombardment processing on a thin substrate and an etching processing unit that applies a bias voltage to the thin substrate while generating plasma using an induction coil.

  According to another aspect of the thin substrate processing apparatus in the technology of the present disclosure, even if the thin substrate is heated by sputtering, reverse sputtering, ion bombardment, and etching, the thin substrate is cooled by the cooling unit. Is done. Therefore, it is possible to suppress the temperature of the thin substrate from being raised.

  In another aspect of the thin substrate processing apparatus according to the technology of the present disclosure, the substrate processing unit is the film forming unit, and the cooling unit is on a surface on which the thin film is formed by deposition of the sputtered particles on the thin substrate. Supply the gas.

  According to another aspect of the thin substrate processing apparatus in the technology of the present disclosure, since the surface on which the thin film is formed is cooled by the gas, the thin substrate is compared with the configuration in which the thin substrate is cooled by contact with the thin substrate. It is possible to prevent the thin film formed on the substrate from being damaged or peeled off.

  In another aspect of the thin substrate processing apparatus according to the technology of the present disclosure, the substrate processing unit includes the film forming unit and the reverse sputtering unit, and a vacuum chamber in which a target surface of the film forming unit is exposed; And a shutter that covers the surface of the target. The reverse sputtering processing unit performs reverse sputtering on the processing surface of the film substrate in a state where the shutter covers the surface of the target.

  According to another aspect of the thin substrate processing apparatus in the technology of the present disclosure, reverse sputtering of the thin substrate is performed in a state where the surface of the target is covered with the shutter. Therefore, even when the target of the film formation unit and the reverse sputtering processing unit are installed in the same vacuum chamber, the particles released from the thin substrate can be prevented from adhering to the surface of the target by cleaning the film substrate. . Therefore, it is possible to suppress the sputtered particles emitted from the target from containing particles emitted from the thin substrate.

  In another aspect of the thin substrate processing apparatus according to the technology of the present disclosure, the substrate processing unit is the reverse sputtering processing unit, a voltage applying unit that applies a bias voltage to the thin substrate, and gas is supplied to the thin substrate A gas supply unit. The voltage application unit applies a bias voltage having a frequency of 1 MHz to 6 MHz to the thin substrate to which the gas is supplied.

The inventors of the present application have found the following in earnest research on conditions for reverse sputtering of a thin substrate. That is, it has been found that when the frequency of the voltage applied to the thin substrate is 1 MHz or more and 6 MHz or less, the sputtering rate of the thin substrate can be increased as compared with the case where the frequency is greater than 6 MHz .

  In this respect, in another aspect of the thin substrate processing apparatus according to the technology of the present disclosure, when the thin substrate is reverse-sputtered, a voltage having a frequency of 1 MHz to 6 MHz is applied to the thin substrate. Sputtering speed is increased.

It is a schematic structure figure showing the composition of the sputtering device in one embodiment of this indication in plane view, and is a figure shown with the film substrate stored in a sputtering device. It is a figure which shows typically the cross-sectional structure of a gas cooling part. It is a figure which shows typically the force which acts on a film board | substrate. It is a figure which shows the structure of a conveyance lane with the film substrate which is the object of conveyance. It is a top view which shows the planar structure which looked at the board | substrate fixing | fixed part from the downward direction of the standing direction. It is a block diagram which shows the electric constitution of a sputtering device. It is a figure which shows the drive state of a sputtering device when a film-forming process is performed. It is a figure which shows the drive state of a sputtering device when a film-forming process is performed. It is a figure which shows the drive state of a sputtering device when a film-forming process is performed. It is a figure which shows the drive state of a sputtering device when a film-forming process is performed. 2 is a graph showing a reverse sputtering rate distribution in Example 1. FIG. 6 is a graph showing the distribution of reverse sputtering speed in Example 2. It is a graph which shows distribution of the reverse sputtering speed in a comparative example. It is a schematic block diagram which shows a part of sputtering apparatus in a modification in planar view, and is a figure shown with the film substrate accommodated in a sputtering apparatus. It is a schematic block diagram which shows a part of sputtering apparatus in a modification in planar view, and is a figure shown with the film substrate accommodated in a sputtering apparatus.

  The configuration of an embodiment of a thin substrate processing apparatus will be described with reference to FIGS. In the following, the overall configuration of a sputtering apparatus, which is an example of a thin substrate processing apparatus, the configuration of a gas cooling unit, the configuration of a transfer lane, the configuration of a substrate fixing unit, the electrical configuration of the sputtering apparatus, the film forming process in the sputtering apparatus, and the implementation This will be described in the order of examples.

[Overall configuration of sputtering equipment]
The overall configuration of the sputtering apparatus will be described with reference to FIG.
As shown in FIG. 1, the sputtering apparatus 10 includes a carry-in / out chamber 11 having a box shape extending toward the front of the paper surface, and a vacuum chamber 12 having a box shape extending toward the front of the paper surface. A gate valve 13 is provided between the processing chamber 11 and the vacuum chamber 12 for communicating or blocking between the processing chambers. The carry-in / out chamber 11 extends along the carry-in / out direction which is the left-right direction of the paper surface, the vacuum chamber 12 extends along the transport direction which is the up-down direction of the paper surface, and the carry-in / out chamber 11 is substantially in the transport direction of the vacuum chamber 12. Connected to the center.

  In the carry-in / out chamber 11, an exhaust part 11 </ b> V for exhausting the inside of the carry-in / out chamber 11 is mounted, and a carry-in / out lane 11 </ b> L extending along the carry-in / out direction is installed on the bottom surface of the carry-in / out chamber 11. The carry-in / out chamber 11 carries in a film substrate S as a thin substrate before film formation attached to the frame-shaped tray T from the outside, and carries it out to the vacuum chamber 12 through a carry-in / out lane 11L. The carry-in / out chamber 11 carries the film substrate S after film formation from the vacuum chamber 12 through the carry-in / out lane 11L and carries it out to the outside.

  The film substrate S is a resin substrate having a rectangular plate shape that extends toward the front of the page, for example. The width of the film substrate S is, for example, 500 mm along the left-right direction of the paper surface, 600 mm toward the front side of the paper surface, and the thickness of the film substrate S is, for example, 80 μm.

  As the forming material of the film substrate S, acrylic resin, polyamide resin, melamine resin, polyimide resin, polyester resin, cellulose, and copolymer resins thereof are used. In addition, as a material for forming the film substrate S, organic natural compounds such as gelatin and casein are used.

  More specifically, the material for forming the film substrate S includes polyester, polyethylene terephthalate, polybutylene terephthalate, polymethylene methacrylate, acrylic, polycarbonate, polystyrene, triacetate, polyvinyl alcohol, polyvinyl chloride, polyvinylidene chloride, polyethylene, and ethylene-acetic acid. Vinyl copolymers, polyvinyl butyral, metal ion cross-linked ethylene-methacrylic acid copolymers, polyurethane, cellophane and the like are used. Among these, as a forming material of the film substrate S, it is preferable to use any of polyethylene terephthalate, polycarbonate, polymethylene methacrylate, and triacetate.

  The thin substrate is not limited to a film substrate, but may be a substrate constituting a printed substrate, such as a paper phenol substrate, a glass epoxy substrate, a Teflon substrate (Teflon is a registered trademark), a ceramic substrate such as alumina, a low temperature co-fired ceramic (LTCC). It may be a rigid substrate such as a substrate. Or the printed board by which the wiring layer comprised with the metal was formed in these board | substrates may be sufficient. In order to enhance the effect of the technology of the present disclosure, it is preferable to use a substrate having a thickness of 1 mm or less as the thin substrate, and it is more preferable to use a substrate having a thickness of 100 μm or less.

  The vacuum chamber 12 includes a reversing chamber 12A, a first film forming chamber 12B, and a second film forming chamber 12C, and the first film forming chamber 12B and the second film forming chamber 12C sandwich the reversing chamber 12A in the transport direction. Is arranged in. An exhaust portion 12V for exhausting the inside of the vacuum chamber 12 is mounted on a surface of the reversing chamber 12A facing the carry-in / out chamber 11. Among the bottom walls of the vacuum chamber 12, a transport lane 12 </ b> L serving as a transport unit extending in the transport direction is installed on the bottom wall of the first film formation chamber 12 </ b> B and the bottom wall of the second film formation chamber 12 </ b> C. Between the transfer lanes 12L, a substrate rotating unit 12R is installed in the reversing chamber 12A.

  The substrate rotating unit 12R includes, for example, a mounting unit on which the film substrate S is mounted and a rotation motor that rotates the mounting unit around an axis orthogonal to the bottom wall of the reversing chamber 12A. The substrate rotating unit 12R arranges the film substrate S on the transport lane 12L by rotating the film substrate S carried in from the carry-in / out chamber 11 by 90 °, for example, counterclockwise on the paper surface. Further, the substrate rotating unit 12R changes the surface of the film substrate S facing the gate valve 13 by rotating the film substrate S 180 degrees counterclockwise in the drawing.

  In the first film forming chamber 12B, the first film forming unit 20A is mounted on the side wall facing the carry-in / out chamber 11, and in the second film forming chamber 12C, the second film forming unit 20B is also formed on the side wall facing the carry-in / out chamber 11. It is installed. Each of the first film forming unit 20A and the second film forming unit 20B is an example of a substrate processing unit. The first film forming unit 20A and the second film forming unit 20B are arranged with the substrate rotating unit 12R interposed therebetween in the transport direction. The first film forming unit 20A and the second film forming unit 20B are different in the mounting position in the vacuum chamber 12 and the thin film to be formed, but the other configurations are the same. The configuration of 20A will be described, and the description of the configuration of the second film forming unit 20B will be omitted.

  The first film forming unit 20A includes a target 21 facing the film substrate S and a backing plate 22 attached to a surface of the target 21 that does not face the film substrate S. The backing plate 22 supplies power to the target 21. The target power supply 23 to be connected is connected. The main component of the material for forming the target 21 is, for example, titanium. On the opposite side of the backing plate 22 from the target 21, a magnetic circuit 24 that forms a leakage magnetic field is mounted on the surface of the target 21 that faces the film substrate S. The first film forming unit 20A includes a sputtering gas supply unit 25 that is connected to the side wall of the first film forming chamber 12B and supplies a sputtering gas into the first film forming chamber 12B. For example, the sputtering gas supply unit 25 supplies argon gas as the sputtering gas. Note that the sputtering gas may be any of nitrogen gas, oxygen gas, and hydrogen gas, or may be a mixed gas in which at least two of these four kinds of gases including argon gas are mixed.

  In the first film forming unit 20A, the target power source 23 supplies, for example, high-frequency power to the target 21 through the backing plate 22 when the sputtering gas supply unit 25 supplies argon gas into the first film forming chamber 12B. As a result, plasma is generated from the argon gas in the first film formation chamber 12B, and the surface of the target 21 that faces the film substrate S is sputtered by positive ions in the plasma, and titanium is the main component toward the film substrate S. Sputtered particles Sp are emitted.

  In the second film forming unit 20B, the main component of the material for forming the target 21 is, for example, copper. The main component of the material for forming the target 21 described above is not limited to titanium or copper, but may be chromium. Alternatively, the main component of the material for forming the target 21 may be an alloy containing at least two of titanium, copper, and chromium.

  A grounded plate-like shutter 26 is mounted between the target 21 and the transfer lane 12L in the carry-in / out direction in the first film forming chamber 12B. The shutter 26 includes, for example, a shutter main body in which an opening 26a is formed, a plate-shaped covering portion that is displaced between a position that covers the opening 26a and a position that is opened, a shutter motor that changes the position of the covering portion, and a shutter motor. A rotating shaft or the like for transmitting the rotational motion to the shutter. The shutter 26 covers the entire surface of the target 21 when the covering portion is disposed at a position covering the opening 26 a.

  The substrate rotating unit 12R arranges the film substrate S on the transport lane 12L by rotating the film substrate S carried into the reversing chamber 12A. The transport lane 12L transports the film substrate S toward the first film forming unit 20A or the second film forming unit 20B. Thereby, the transport lane 12L moves the film substrate S from the non-processing position where the film substrate S and the target 21 do not face each other in the transport direction to the processing position where the entire film substrate S and the target 21 face each other. Transport. The first film forming unit 20A and the second film forming unit 20B form a thin film on the film substrate S disposed at the processing position corresponding to each of the film forming units 20A and 20B.

  In each of the first film forming chamber 12B and the second film forming chamber B, one gas cooling unit 31 as a cooling unit is mounted, and the gas cooling unit 31 of the first film forming chamber 12B includes the first film forming chamber 12B and the second film forming chamber B. The gas cooling unit 31 of the second film forming chamber 12C is arranged at a processing position corresponding to the second film forming unit 20B. Each gas cooling unit 31 cools the film substrate S by supplying a cooling gas in contact with a surface of the film substrate S that does not face the target 21. Each gas cooling unit 31 is connected to a displacement unit 32 that changes the position of the gas cooling unit 31 in the carry-in / out direction.

  Each displacement unit 32 includes, for example, a shaft connected to a surface of the gas cooling unit 31 that does not face the target 21, a displacement motor that changes the position of the shaft in the loading / unloading direction, and a rotational motion of the displacement motor that is linear motion It is equipped with a transmission part that changes to the shaft and transmits it to the shaft. Each displacement unit 32 is configured to perform gas cooling between a contact position where the gas cooling unit 31 is in contact with the tray T in the loading / unloading direction and a non-contact position where the gas cooling unit 31 is not in contact with the tray T in the loading / unloading direction. The position of the part 31 is changed.

  Each of the gas cooling units 31 is arranged at a contact position in the carry-in / out direction when the film substrate S is arranged at the processing position, and is arranged at a non-contact position in the carry-in / out direction when the film substrate S is conveyed. . That is, when the film substrate S is transported, the gas cooling unit 31 is disposed at a position away from the film substrate S, so that contact between the film substrate S being transported and the gas cooling unit 31 is suppressed.

[Configuration of gas cooling section]
The configuration of the gas cooling unit 31 will be described in more detail with reference to FIGS. 2 and 3.
As shown in FIG. 2, the gas cooling unit 31 includes a cooling plate 41 having a plate shape extending toward the front of the paper surface. The forming material of the cooling plate 41 includes, for example, ceramics such as aluminum oxide, polyimide, and the like. Etc. are used. The width of the cooling plate 41 is substantially equal to the width of the film substrate S in both the right and left direction of the paper surface and the front direction of the paper surface. However, the width in each direction in the cooling plate 41 is larger than the width in the same direction in the film substrate S.

  In the cooling plate 41, a plurality of cooling holes 41h1, which are cooling gas passages, are formed along the carry-in / out direction of the cooling plate 41, and each cooling hole 41h1 is formed in the cooling plate 41 along the transport direction. It is connected to one cooling passage 41h2. Each cooling hole 41h1 is partitioned by, for example, a cylindrical surface, and each of the plurality of cooling holes 41h1 is formed in the surface of the cooling plate 41 at a predetermined interval.

  On the surface of the cooling plate 41 that does not face the film substrate S, a plate-like bias electrode 51 that extends toward the front of the paper surface is attached. The bias electrode 51 and the cooling plate 41 pass through between the surface of the bias electrode 51 in contact with the cooling plate 41 and a surface facing this surface, and are connected to the cooling passage 41h2 through the cooling plate 41. A cooling gas supply hole 31h is formed.

  A common cooling gas supply unit 42 for supplying a cooling gas having a predetermined temperature is connected to the cooling gas supply hole 31h. For example, helium gas or argon gas is used as the cooling gas supplied by the cooling gas supply unit 42.

  The bias electrode 51 is connected to a bias high-frequency power source 52 that supplies high-frequency power to the bias electrode 51. The biasing high frequency power supply 52 preferably supplies high frequency power having a frequency of 1 MHz to 6 MHz, for example. Alternatively, the bias high frequency power supply 52 may be configured to supply a relatively high frequency high frequency power and a relatively low frequency high frequency power. In this case, it is preferable that the high frequency power supply 52 for bias supplies high frequency power having a frequency of 13 MHz to 28 MHz and high frequency power having a frequency of 100 kHz to 1 MHz. In the present embodiment, the bias electrode 51, the bias high-frequency power source 52, and the sputtering gas supply unit 25 constitute a reverse sputtering processing unit. Further, the high frequency power supply 52 for bias constitutes a voltage application unit.

  On the surface of the cooling plate 41 facing the film substrate S, an annular sealing member 43 is attached along the outer periphery of the cooling plate 41. When the film substrate S is disposed at the processing position and the gas cooling unit 31 is disposed at the contact position, the surface of the tray T facing the gas cooling unit 31 and the surface of the gas cooling unit 31 facing the film substrate S The seal member 43 is crushed.

  Thereby, a cooling space sealed by the surface of the cooling plate 41 facing the film substrate S, the surface of the tray T facing the cooling plate 41, and the surface of the film substrate S facing the cooling plate 41 is formed. The cooling gas supply unit 42 continues to supply the cooling gas to the cooling space at a predetermined flow rate while the cooling space is formed. At this time, since the cooling space is partitioned by the surface of the film substrate S facing the cooling plate 41, the entire film substrate S surrounded by the tray T comes into contact with the cooling gas.

The gas cooling unit 31 includes a clamp 44 that holds the surface of the tray T facing the target 21 toward the gas cooling unit 31.
Thus, the gas cooling unit 31 cools the film substrate S with the cooling gas. For this reason, even when particles having high energy reach the film substrate S due to film formation on the film substrate S or the like, the temperature of the film substrate S is hardly increased as compared with the configuration in which the film substrate S is not cooled.

  In addition, when the high-frequency power supply 52 for bias supplies high-frequency power to the bias electrode 51 in a state where argon gas is supplied from the sputtering gas supply unit 25 to the first film formation chamber 12B, the first film formation chamber 12B includes Plasma is generated from argon gas. When the high-frequency power is supplied to the bias electrode 51 while the gas cooling unit 31 is in contact with the tray T, a bias voltage is applied to the film substrate S. Thereby, since positive ions in the plasma are drawn into the film substrate S, the surface of the film substrate S that does not face the gas cooling unit 31 is reverse-sputtered.

  As shown in FIG. 3, the film substrate S is pulled by the tray T with a tension Ft <b> 1 from the center of the film substrate S toward the outer periphery. The magnitude of the tension Ft1 is set to a value sufficiently larger than the maximum value Fg in the pressure of the cooling gas supplied to the cooling space. Therefore, even if the cooling gas continues to be supplied to the cooling space while the cooling space is formed, the film substrate S is less likely to be convex toward the target 21 side. Therefore, since the shape of the film substrate S is maintained while the film forming process is performed on the film substrate S, variations in the thickness of the thin film in the plane of the film substrate S can be suppressed.

[Construction of transportation lane]
The configuration of the transportation lane 12L will be described in more detail with reference to FIGS. FIG. 4 shows a state in which the film substrate S is disposed at a facing position facing the first film forming unit 20A in the transport direction. The transfer lane 12L installed in the first film formation chamber 12B and the transfer lane 12L installed in the second film formation chamber 12C are related to the transfer of the film substrate S although the installation positions in the vacuum chamber 12 are different. The configuration is the same. Therefore, hereinafter, the configuration of the transfer lane 12L installed in the first film formation chamber 12B will be described, and the description of the configuration of the transfer lane 12L installed in the second film formation chamber 12C will be omitted.

  As shown in FIG. 4, a transport lane 12L is installed on the bottom wall of the first film forming chamber 12B, and the transport lane 12L has a transport rail 61 extending along the transport direction and a predetermined distance from the transport rail 61. And a plurality of conveying rollers 62 arranged with a gap therebetween. Each of the transport rollers 62 is supported by the transport rail 61 in a state where it can rotate about the axis of the transport roller 62 as a rotation center. Each conveyance roller 62 is connected to a conveyance motor 63 that rotates the conveyance roller 62, and each conveyance motor 63 rotates the conveyance roller 62 in two directions by rotating in the forward direction and the reverse direction.

  The film substrate S supported by the tray T is placed on the transport rail 61 in an upright state. Hereinafter, the height direction of the film substrate S is set as the standing direction. The tray T on the transport rail 61 rotates the substrate from the substrate rotating unit 12R in the transport direction toward the facing position corresponding to each of the film forming units 20A and 20B or from the facing position by rotating the transport roller 62. It is conveyed together with the film substrate S toward the portion 12R. In this way, the transport lane 12L transports the film substrate S while supporting the lower end of the film substrate S in the standing direction.

  On the upper wall of the first film forming chamber 12B, a substrate fixing portion 64 for fixing the film substrate S at the above-described processing position is attached at a position facing a part of the transport lane 12L in the height direction. The substrate fixing part 64 fixes the position of the film substrate S to the processing position by supporting the upper edge in the rising direction of the film substrate S, that is, the rising direction of the tray T.

  As shown in FIG. 5, the substrate fixing portion 64 has a column shape extending along the transport direction, and a holding groove 64 h is formed at the lower end portion in the standing direction. The groove width that is the width along the carry-in / out direction in the holding groove 64h is the largest at the end close to the substrate rotating part 12R, and the smallest at the end far from the substrate rotating part 12R. The width of the sandwiching groove 64h gradually decreases from the groove width W1 toward the groove width W2. The groove width of the sandwiching groove 64h becomes a groove width W3 equal to the width along the carry-in / out direction of the tray T in the middle of the conveyance direction. Therefore, in the tray T being transported in the transport lane 12L, the upper edge in the standing direction is inserted into the substrate fixing portion 64. Then, the position of the tray T in the transport direction is fixed to the processing position in the middle of the transport direction of the substrate fixing unit 64.

[Electrical configuration of sputtering equipment]
The electrical configuration of the sputtering apparatus 10 will be described with reference to FIG. Hereinafter, of the electrical configuration of the sputtering apparatus 10, only the configuration related to the drive control of the vacuum chamber 12 will be described.

  As shown in FIG. 6, the sputtering apparatus 10 includes a control device 70 that controls driving of the sputtering apparatus 10. The control device 70 includes an exhaust unit 12V, a substrate rotating unit 12R, a sputtering gas supply unit 25, a shutter 26, a displacement unit 32, a cooling gas supply unit 42, a transport motor 63, a target power source 23, and a bias high frequency power source 52. It is connected.

  The control device 70 outputs a drive start signal for starting the drive of the exhaust unit 12V and a drive stop signal for stopping the drive of the exhaust unit 12V to the exhaust unit drive circuit 12VD. The exhaust part drive circuit 12VD generates a drive signal for driving the exhaust part 12V in accordance with a control signal from the control device 70, and outputs the generated drive signal to the exhaust part 12V.

  The control device 70 outputs to the substrate rotation unit drive circuit 12RD a drive start signal for starting driving of the substrate rotation unit 12R, in particular, a rotation motor, and a drive stop signal for stopping driving of the substrate rotation unit 12R. To do. The substrate rotation unit drive circuit 12RD generates a drive signal for driving the substrate rotation unit 12R according to a control signal from the control device 70, and outputs the generated drive signal to the substrate rotation unit 12R.

  The control device 70 supplies a sputtering gas supply signal for starting the supply of the sputtering gas from the sputtering gas supply unit 25 and a supply stop signal for stopping the supply of the sputtering gas from the sputtering gas supply unit 25. To the unit drive circuit 25D. The sputtering gas supply unit drive circuit 25 </ b> D generates a drive signal for driving the sputtering gas supply unit 25 in accordance with a control signal from the control device 70, and outputs the generated drive signal to the sputtering gas supply unit 25.

  The control device 70 outputs to the shutter drive circuit 26D a drive start signal for starting the drive of the shutter 26, in particular, the shutter motor, and a drive stop signal for stopping the drive of the shutter 26. The shutter drive circuit 26 </ b> D generates a drive signal for driving the shutter 26 in accordance with a control signal from the control device 70, and outputs the generated drive signal to the shutter 26.

  The control device 70 outputs a drive start signal for starting driving of the displacement unit 32, in particular, a displacement motor, and a drive stop signal for stopping driving of the displacement unit 32 to the displacement unit drive circuit 32D. The displacement part drive circuit 32 </ b> D generates a drive signal for driving the displacement part 32 in accordance with a control signal from the control device 70, and outputs the generated drive signal to the displacement part 32.

  The control device 70 supplies a cooling gas supply with a supply start signal for starting the supply of the cooling gas from the cooling gas supply unit 42 and a supply stop signal for stopping the supply of the cooling gas from the cooling gas supply unit 42. To the unit drive circuit 42D. The cooling gas supply unit drive circuit 42 </ b> D generates a drive signal for driving the cooling gas supply unit 42 according to the control signal from the control device 70, and outputs the generated drive signal to the cooling gas supply unit 42.

  The control device 70 outputs a drive start signal for starting the drive of the carry motor 63 and a drive stop signal for stopping the drive of the carry motor 63 to the carry motor drive circuit 63D. The conveyance motor drive circuit 63 </ b> D generates a drive signal for driving the conveyance motor 63 according to the control signal from the control device 70, and outputs the generated drive signal to the conveyance motor 63.

  The control device 70 outputs a supply start signal for starting the supply of power from the target power supply 23 and a supply stop signal for stopping the supply of power from the target power supply 23 to the target power supply 23. The target power supply 23 supplies and stops power according to a control signal from the control device 70.

  The control device 70 outputs a supply start signal for starting supply of power from the bias high frequency power supply 52 and a supply stop signal for stopping supply of power from the bias high frequency power supply 52 to the bias high frequency power supply 52. Output to. The bias high frequency power supply 52 supplies and stops electric power in accordance with a control signal from the control device 70.

[Film formation with sputtering equipment]
With reference to FIG. 7 to FIG. 10, the driving state of the sputtering apparatus 10 when the film forming process is performed in the vacuum chamber 12 of the sputtering apparatus 10 will be described. 7 to 10, for convenience of illustration, only the vacuum chamber 12 provided in the sputtering apparatus 10 is shown, and the carry-in / out chamber 11 is not shown.

  In the vacuum chamber 12 of the sputtering apparatus 10 described above, reverse sputtering processing, adhesion layer forming processing, and seed layer forming processing for cleaning the surface that is the film formation surface of the film substrate S with respect to the film substrate S before film formation are performed. It is done in order. Note that an insulating layer made of, for example, a glass epoxy resin is formed on the surface of the film substrate S. Hereinafter, the operation of the sputtering apparatus 10 from when the film substrate S is carried into the vacuum chamber 12 until the reverse sputtering process, the adhesion layer forming process, and the seed layer forming process are completed will be described.

  As shown in FIG. 7, when the film forming process is performed on the film substrate S, first, the control device 70 outputs a drive start signal for the rotation motor, and the substrate rotating unit 12R is placed on the mounting unit. S is rotated 90 ° counterclockwise. Thereby, the lower end of the tray T in the standing direction is arranged on the transfer lane 12L of the first film forming chamber 12B. Before the film substrate S is carried into the vacuum chamber 12, the control device 70 outputs a drive start signal for the exhaust unit 12V, and the exhaust unit 12V exhausts the inside of the vacuum chamber 12. Thereby, the inside of the vacuum chamber 12 is depressurized to a predetermined pressure. Further, the covering portion of the shutter 26 is disposed at a position covering the opening 26a.

  After the film substrate S is carried in, the control device 70 outputs a supply start signal to the two sputtering gas supply units 25 mounted in the vacuum chamber 12. Each sputtering gas supply unit 25 starts supplying argon gas into the vacuum chamber 12 at a predetermined flow rate, and maintains the inside of the vacuum chamber 12 at a predetermined pressure. Note that the flow rates of the argon gas supplied by the two sputtering gas supply units 25 may be the same or different from each other.

  And the control apparatus 70 outputs the drive start signal with respect to the conveyance motor 63, and the conveyance lane 12L directs the film substrate S toward the process position which is a position facing the target 21 of 20 A of 1st film-forming parts from a non-process area | region. Transport. The control device 70 outputs a drive stop signal to the transport motor 63, and the transport lane 12L fixes the position of the film substrate S at the facing position. At this time, the upper edge of the tray T in the standing direction is fixed by the substrate fixing portion 64.

  As shown in FIG. 8, the control device 70 outputs a drive start signal for the displacement motor, and the displacement unit 32 disposed at the position facing the first film forming unit 20 </ b> A determines the position of the gas cooling unit 31 in the loading / unloading direction. By changing, the gas cooling unit 31 is moved from the non-contact position to the contact position. At this time, since the tray T is fixed by the substrate fixing portion 64, the position of the film substrate S can be prevented from changing even if the gas cooling portion 31 contacts.

Thereafter, the control device 70 outputs a supply start signal to the cooling gas supply unit 42, and the cooling gas supply unit 42 starts supplying the cooling gas to the cooling space.
Next, the control device 70 outputs a supply start signal to the bias high-frequency power source 52 of the first film forming unit 20A. Then, the bias high frequency power supply 52 starts to supply high frequency power to the bias electrode 51.

  Thereby, plasma is generated from the argon gas in the first film formation chamber 12B, and positive ions in the plasma are drawn toward the film substrate S. As a result, the processing surface, which is the surface facing the target 21 in the film substrate S, is reverse-sputtered, so that deposits and the like on the film substrate S are removed. At this time, since the film substrate S is cooled by the gas cooling unit 31, it is possible to suppress an increase in the temperature of the film substrate S compared to a configuration in which the film substrate S is not cooled. Further, since the surface of the target 21 that faces the film substrate S is covered with the shutter 26, particles emitted from the film substrate S are less likely to adhere to the surface of the target 21.

  Therefore, even if the surface cleaning process by reverse sputtering of the film substrate S and the film forming process on the film substrate S are performed in the same first film forming chamber 12B, a thin film formed on the film substrate S is formed. Is less likely to contain particles emitted from the film substrate S. In addition, since the cleaning process of the surface of the target 21 facing the film substrate S can be omitted before the film substrate S is formed, the number of film forming processes performed in the vacuum chamber 12 can be reduced. it can.

  When reverse sputtering of the film substrate S is performed for a predetermined time, the control device 70 outputs a supply stop signal to the bias high-frequency power source 52, and the bias high-frequency power source 52 stops supplying high-frequency power to the bias electrode 51. . Thereby, the sputtering of the film substrate S is completed.

  As shown in FIG. 9, the control device 70 outputs a drive start signal for the shutter motor, and the covering portion of the shutter 26 is disposed at a position where the opening 26a is opened. Then, the control device 70 outputs a supply start signal for the target power source 23, whereby the target power source 23 supplies power to the target 21 through the backing plate 22. Thereby, plasma is generated from the argon gas in the first film formation chamber 12B, and the surface of the target 21 that faces the film substrate S is sputtered by positive ions in the plasma. As a result, sputtered particles Sp mainly composed of titanium are released from the target 21 toward the film substrate S, whereby a thin film of titanium as an adhesion layer is formed on the film substrate S.

  Since argon gas is continuously supplied into the first film formation chamber 12B over the reverse sputtering of the film substrate S and the formation of the adhesion layer, the pressure in the first film formation chamber 12B hardly changes. Therefore, compared to a configuration in which the supply of argon gas is stopped at the same time as the reverse sputtering of the film substrate S is completed, plasma is easily generated from the argon gas in the first film formation chamber 12B. Further, the film substrate S is continuously cooled by the gas cooling unit 31 over the reverse sputtering of the film substrate S and the formation of the adhesion layer. Therefore, as compared with the configuration in which the cooling of the film substrate S by the gas cooling unit 31 is stopped at the same time as the reverse sputtering of the film substrate S is finished, the film substrate S is cooled for a longer period. It becomes difficult to raise the temperature of the.

  When the formation of the adhesion layer is performed for a predetermined time, the control device 70 outputs a supply stop signal to the target power source 23. Thereby, the formation of the adhesion layer on the film substrate S is completed. Thereafter, the control device 70 outputs a supply stop signal to the cooling gas supply unit 42, and the cooling gas supply unit 42 ends the supply of the cooling gas to the cooling space. Further, the control device 70 outputs a drive start signal for the shutter motor, and the covering portion of the shutter 26 is disposed at a position covering the opening 26a.

  As shown in FIG. 10, the control device 70 outputs a drive signal for the displacement motor, and the displacement unit 32 disposed at the processing position that is the position opposite to the first film forming unit 20 </ b> A is in the loading / unloading direction of the gas cooling unit 31. By changing the position at, the gas cooling unit 31 is moved from the contact position to the non-contact position. Thereby, since the gas cooling part 31 leaves | separates from the tray T, the cooling gas supplied in cooling space is discharge | released in the 1st film-forming chamber 12B.

  The control device 70 outputs a drive start signal for the transport motor 63, and the transport lane 12L transports the film substrate S toward the substrate rotating unit 12R. And the control apparatus 70 outputs the drive start signal with respect to a rotary motor, and the film rotation part 12R conveys the film board | substrate S to the conveyance lane 12L by the side of the 2nd film-forming part 20B in the state which does not rotate the film board | substrate S. Next, the control device 70 outputs a drive start signal to the transport motor 63, and transports the film substrate S from the non-processing position toward the processing position that is the position facing the second film forming unit 20B. The control device 70 outputs a drive stop signal to the transport motor 63, and the transport lane 12L fixes the position of the film substrate S at the facing position. At this time, the upper edge of the tray T in the standing direction is fixed by the substrate fixing portion 64.

  The control device 70 outputs a drive start signal for the displacement motor, and the displacement unit 32 disposed at a position opposite to the second film forming unit 20B changes the position of the gas cooling unit 31 in the loading / unloading direction, whereby the gas cooling unit 31. Is moved from the non-contact position to the contact position. At this time, since the tray T is fixed by the substrate fixing portion 64, the position of the film substrate S can be prevented from changing even if the gas cooling portion 31 contacts.

  Thereafter, the control device 70 outputs a supply start signal to the cooling gas supply unit 42 and the cooling gas supply unit 42 starts supplying the cooling gas to the cooling space, whereby the gas cooling unit 31 cools the film substrate S.

  Next, the control device 70 outputs a supply start signal for the target power supply 23 of the second film forming unit 20B. Then, the target power source 23 starts supplying power to the target 21 through the backing plate 22. Thereby, plasma is generated from the argon gas in the second film forming chamber 12C, and the surface of the target 21 facing the film substrate S is sputtered by positive ions in the plasma. As a result, sputtered particles Sp mainly composed of copper are emitted from the target 21 toward the film substrate S, and a copper thin film as a seed layer is formed on the film substrate S. At this time, since the film substrate S is cooled by the gas cooling unit 31, it is possible to suppress an increase in the temperature of the film substrate S compared to a configuration in which the film substrate S is not cooled.

  When the seed layer is formed over a predetermined time, the control device 70 outputs a supply stop signal to the target power source 23. As a result, the target power source 23 stops supplying power to the backing plate 22 and the formation of the seed layer is completed. Moreover, the control apparatus 70 outputs the supply stop signal with respect to the cooling gas supply part 42, and the cooling gas supply part 42 complete | finishes supply of the cooling gas with respect to cooling space. Thereafter, the control device 70 outputs a drive signal for the displacement motor, and the displacement unit 32 disposed at the position facing the second film forming unit 20B changes the position of the gas cooling unit 31 in the loading / unloading direction, thereby the gas cooling unit. 31 is moved from the contact position to the non-contact position. Thereby, since the gas cooling part 31 leaves | separates from the tray T, the cooling gas supplied in cooling space is discharge | released in 12 C of 2nd film-forming chambers.

Next, the control device 70 outputs a supply stop signal to each of the two sputtering gas supply units 25, and the sputtering gas supply unit 25 stops supplying argon gas into the vacuum chamber 12.
As described above, the argon gas is continuously supplied into the vacuum chamber 12 from the start to the end of the reverse sputtering process for the film substrate S, the formation of the adhesion layer, and the formation of the seed layer. For this reason, the pressure in the vacuum chamber 12 is less likely to change compared to a configuration in which the supply state of the argon gas changes each time the reverse sputtering process, the formation of the adhesion layer, and the formation of the seed layer are started and ended. Therefore, plasma is easily generated in the vacuum chamber 12 when the adhesion layer and the seed layer are formed.

  In addition, according to such a vacuum chamber 12, it is possible to perform a reverse sputtering process, an adhesion layer forming process, and a seed layer forming process on two surfaces facing each other on the film substrate S. When each process is performed on two surfaces of the film substrate S, the film substrate S is subjected to all of the reverse sputtering process, the adhesion layer forming process, and the seed layer forming process on one surface of the film substrate S. It is only necessary that S is rotated 180 ° counterclockwise by the substrate rotating unit 12R. Thereby, the reverse sputtering process, the adhesion layer forming process, and the seed layer forming process for the other surface of the film substrate S can be performed. Alternatively, after the reverse sputtering process and the adhesion layer forming process are performed on each of the two surfaces of the film substrate S, the seed layer forming process may be performed on each of the two surfaces.

  In the film forming chambers 12B and 12C described above, the gas cooling unit 31 cools the film substrate S, and the cooling plate 41 and the like constituting the gas cooling unit 31 do not contact the surface of the film substrate S that does not face the target 21. . Therefore, even when the adhesion layer and the seed layer are formed on the two surfaces of the film substrate S, the gas cooling unit 31 does not contact the surface of the film substrate S after the film formation. Therefore, each layer formed on the film substrate S is damaged or peeled off as compared with a configuration in which a mechanism for cooling the film substrate S contacts the surface of the film substrate S after the film formation. Is suppressed.

[Example]
[Example 1]
The surface of the insulating substrate made of glass epoxy resin was sputtered, and the sputtering rate of the insulating substrate was measured at different positions within the effective sputtering range, which is the range in which the insulating substrate was sputtered. In addition, the magnitude | size of the sputtering effective range is 500 mm x 600 mm, and the sputtering process was performed on condition of the following. Then, the sputtering rate was measured between the first corner and the second corner, which are the two corners on the diagonal within the effective sputtering range, the center, and between each corner and the center, and the result is shown in FIG. Is shown in

・ Substrate Glass epoxy resin substrate ・ Sputtering gas Argon gas ・ Flow rate 200sccm
・ Frequency 2MHz
・ Power consumption 730W
・ Pressure 2Pa
As shown in FIG. 11, the sputtering rate at the center of the effective sputtering range is 1.9 nm / min, and the variation in the sputtering rate over the entire effective sputtering range is ± 7.3%. It was. It is also recognized that a result equivalent to the result shown in FIG. 11 can be obtained if the frequency of the high frequency power supplied from the high frequency power supply for bias is in the range of 1 MHz to 6 MHz.

[Example 2]
As in Example 2, the surface of the insulating substrate made of glass epoxy resin was sputtered, and the sputtering rate of the insulating substrate at different positions in the sputtering effective range was measured. In Example 3, the sputtering treatment was performed under the following conditions, and the sputtering rate was measured at the same position as in Example 2 in the sputtering effective range. The result is shown in FIG.

・ Substrate Glass epoxy resin substrate ・ Sputtering gas Argon gas ・ Flow rate 200sccm
・ Frequency (high frequency) 13.56MHz
・ Electricity (high frequency) 730W
・ Frequency (low frequency) 200 kHz
・ Electricity (low frequency) 805W
・ Pressure 2Pa
As shown in FIG. 12, the sputtering rate at the center of the sputtering effective range is 21.1 nm / min, and it is recognized that the variation in the sputtering rate in the entire sputtering effective range is ± 23.7%. It was. Of the high frequency power for bias, the frequency of the high frequency power having a relatively high frequency is 13 MHz to 28 MHz and the frequency of the high frequency power having a relatively low frequency is 100 kHz to 1 MHz, as shown in FIG. It is also recognized that results equivalent to those obtained are obtained.

[Comparative example]
As in Example 2, the surface of the insulating substrate made of glass epoxy resin was sputtered, and the sputtering rate of the insulating substrate at different positions on the film substrate was measured. In the comparative example, the sputtering process was performed under the following conditions, and the sputtering speed was measured at the same position as in Example 2 on the film substrate. The result is shown in FIG.

・ Substrate Glass epoxy resin substrate ・ Sputtering gas Argon gas ・ Flow rate 200sccm
・ Frequency 13.56MHz
・ Power consumption 730W
・ Pressure 0.7Pa
As shown in FIG. 13, the sputtering rate at the center of the sputtering effective range is 0.4 nm / min, and the variation of the sputtering rate in the entire sputtering effective range is ± 42.0%.

  Thus, when sputtering the film substrate, the sputtering rate is increased by setting the frequency of the high-frequency power supplied from the biasing high-frequency power source to 1 MHz to 6 MHz, and the sputtering rate in the plane of the film substrate is increased. It was recognized that the variation in the size was also reduced. Further, since the frequency of the high-frequency power supplied from the bias high-frequency power source is a relatively high frequency and a relatively low frequency as described below, the sputtering rate can be increased and the surface of the film substrate can be increased. It was confirmed that the variation in the sputtering rate was also reduced.

-High frequency 13 MHz or more and 28 MHz or less-Low frequency 100 kHz or more and 1 MHz or less As described above, according to one embodiment of the thin substrate processing apparatus, the effects listed below can be obtained.

  (1) Even when sputtered particles Sp having high energy are released to the film substrate S, the gas cooling unit 31 cools the film substrate S. It becomes difficult to raise the temperature.

  (2) By supplying the cooling gas to the cooling space, the cooling gas is supplied to the entire surface of the film substrate S that does not face the target 21. Therefore, the temperature of the film substrate S is less likely to be raised compared to a configuration in which a part of the surface of the film substrate S that does not face the target 21 is cooled.

  (3) It is possible to prevent the shape of the film substrate S from being changed by supplying the cooling gas to the cooling space. Therefore, variation in the amount of sputtered particles Sp reaching in the plane of the film substrate S can be suppressed. That is, the thickness of the thin film formed on the film substrate S can be prevented from varying in the plane of the film substrate S.

  (4) Since the surface on which the thin film is formed in the film substrate S is cooled by the cooling gas, the thin film formed on the film substrate S is compared with the configuration in which the film substrate S is cooled by contact with the film substrate S. Damage and peeling are suppressed.

  (5) The cleaning process of the film substrate S is performed in a state where the surface of the target 21 is covered by the shutter 26. Therefore, even if the target 21 and the bias electrode 51 used for cleaning the substrate are installed in the same first film formation chamber 12B, the particles 21 released from the film substrate S by the cleaning of the film substrate S are removed. Adhering to the surface is suppressed. Therefore, the sputtered particles Sp emitted from the target 21 are suppressed from containing particles emitted from the film substrate S.

  (6) When the film substrate S is reverse-sputtered, a voltage having a frequency of 1 MHz or more and 6 MHz or less is applied to the film substrate S, so that the sputtering rate of the film substrate S is increased. Further, the in-plane distribution at the sputtering rate of the film substrate S is also enhanced.

  (7) When the film substrate S is reverse-sputtered, a voltage having a frequency of 13 MHz to 28 MHz and a voltage having a frequency of 100 kHz to 1 MHz are superimposed on the film substrate S. Speed is increased. Further, the in-plane distribution at the sputtering rate of the film substrate S is also enhanced.

In addition, the said embodiment can also be suitably changed and implemented as follows.
The high frequency power supplied from the bias high frequency power supply 52 does not have to have a frequency of 1 MHz or more and 6 MHz or less. Even with such a configuration, since the surface of the film substrate S facing the target 21 is reverse-sputtered, the film substrate S can be cleaned.

  When the high frequency power supplied from the bias high frequency power supply 52 is 13 MHz or more and 28 MHz or less, the high frequency power having a frequency of 100 kHz or more and 1 MHz or less may not be superimposed. Even with such a configuration, since the surface of the film substrate S facing the target 21 is reverse-sputtered, the film substrate S can be cleaned.

  The shutter 26 may not be attached to the first film forming chamber 12B. In the case of such a configuration, a reverse sputtering processing chamber in which the film substrate S is cleaned may be provided separately from the processing chamber in which the thin film is formed on the film substrate S. In this case, the bias electrode 51 and the bias high-frequency power source 52 do not have to be installed in the first film forming chamber 12B. The reverse sputtering process chamber includes a gas cooling unit, a displacement unit, a bias electrode, a high-frequency power source for bias, and a ground electrode which is an anode at a position facing the bias electrode, similar to the first film formation chamber 12B. Should just be installed. Thereby, it is possible to suppress the particles emitted from the film substrate S from adhering to the surface of the target 21. However, since a processing chamber for cleaning the film substrate S is provided separately, on the premise that the installation area of the vacuum chamber 12 does not change, the installation area of the sputtering apparatus 10 increases as the number of processing chambers increases. .

  When the processing chamber different from the first film forming chamber 12B is provided as described above, the substrate processing unit is not limited to the configuration embodied by the bias electrode 51 and the bias high-frequency power source 52, For example, the following configuration may be used.

  As shown in FIG. 14, the vacuum chamber 12 includes an etching chamber 12D in addition to the reversing chamber 12A, the first film-forming chamber 12B, and the second film-forming chamber 12C. The film forming chamber 12B is arranged with the reversing chamber 12A sandwiched in the transport direction. Then, the carry-in / out chamber 11 and the second film formation chamber 12C are arranged with the reversing chamber 12A interposed therebetween in the carry-in / out direction. Even when the first film forming chamber 12B, the second film forming chamber 12C, and the etching processing chamber 12D are connected to the reversing chamber 12A, the exhaust unit 12V that exhausts the vacuum chamber 12 is provided in the reversing chamber. 12A. A high frequency antenna 81 is mounted outside the etching processing chamber 12D. The high frequency antenna 81 is connected to an antenna high frequency power supply 82 for supplying high frequency power having a frequency of 13.56 MHz, for example. Yes.

  In such a configuration, the etching gas supply unit 83 supplies, for example, argon gas into the etching processing chamber 12D, and the high frequency power supply 82 for the antenna supplies high frequency power to the high frequency antenna 81, thereby generating plasma in the etching processing chamber 12D. Is done. The high frequency power supply for bias 52 supplies high frequency power to the bias electrode 51, whereby positive ions in the plasma are drawn toward the film substrate S. Thereby, the surface facing the target 21 in the film substrate S is etched. When the film substrate S is etched, the gas cooling unit 31 cools the film substrate S, thereby preventing the temperature of the film substrate S from being raised.

  The gas supplied by the etching gas supply unit 83 is not limited to argon gas, but may be nitrogen gas, oxygen gas, carbon tetrafluoride gas, sulfur hexafluoride gas, nitrogen trifluoride gas, or the like. The high frequency antenna 81, the antenna high frequency power source 82, the etching gas supply unit 83, the bias electrode 51, and the bias high frequency power source 52 constitute an etching processing unit.

  Alternatively, as shown in FIG. 15, the vacuum chamber 12 includes an ion processing chamber 12E instead of the above-described etching processing chamber 12D, and an ion gun 84 as an ion processing unit is mounted in the ion processing chamber 12E. Good. A displacement portion that swings the ion gun 84 in the transport direction is connected to the ion gun 84. The displacement portion swings the ion gun 84 between a position facing one end of the film substrate S arranged at the processing position in the transport direction and a position facing the other end. Thereby, the entire surface of the film substrate S is irradiated with an ion beam.

  Even with such a configuration, for example, the film substrate S is cleaned by an ion bombardment process in which an ion beam generated from argon gas is irradiated onto the surface of the film substrate S facing the ion gun 84. When the ion bombardment process is performed on the film substrate S, the gas cooling unit 31 cools the film substrate S, thereby preventing the temperature of the film substrate S from being raised. The gas used for generating the ion beam is not limited to argon gas, but may be nitrogen gas, oxygen gas, hydrogen gas, or the like.

  In the ion processing chamber 12E, the gas cooling unit 31 and the displacement unit 32 may not be installed, and the ion guns 84 may be disposed on both sides of the film substrate S in the carry-in / out direction. In this case, a plurality of, for example, 2 to 8 ion guns 84 are fixed to each of the positions facing each surface in the film substrate S, and each ion beam is applied to the film substrate S conveyed by the conveyance lane 12L. Irradiated from the ion gun 84. Thereby, ion bombardment processing is performed on two surfaces facing each other on the film substrate S.

  As described above, when the vacuum chamber 12 is provided in the reverse sputtering process chamber separately from the first film formation chamber 12B, as shown in FIGS. 14 and 15, the second film formation chamber 12C What is necessary is just to install in the reverse side with respect to the inversion chamber 12A with respect to the inversion chamber 12A in the carrying in / out direction.

  The sputtering apparatus 10 may have a configuration related to cleaning of the film substrate S, that is, a configuration in which the bias electrode 51, the bias high-frequency power source 52, the etching processing chamber 12D, and the ion processing chamber 12E are not mounted.

In the vacuum chamber 12, various processes may be performed on only one surface of the film substrate S. Even if it is such a structure, the effect according to said (1) can be acquired.
For example, a beam formed in a lattice shape on the surface of the film substrate S facing the target 21 is arranged as a mask, and the mask prevents the shape of the film substrate S from changing to a convex shape toward the target 21. It may be configured. According to such a configuration, the tension applied to the film substrate S can be suppressed, or the tension applied to the film substrate S can be eliminated.

  The cooling space may be, for example, an open space sandwiched between a surface of the film substrate S facing the cooling plate 41 and a surface of the cooling plate 41 facing the film substrate S. With such a configuration, the configuration in which the tray T and the gas cooling unit 31 are brought into contact with each other and the seal member 43 itself can be omitted. Further, for example, the surface of the film substrate S that faces the cooling plate 41 itself may be opened, and the gas cooling unit 31 may simply supply the cooling gas to the surface of the film substrate S that does not face the target 21. Even if it is such a structure, as long as it is the structure which cools the film board | substrate S using a cooling gas, the effect according to said (1) can be acquired.

  The gas cooling unit 31 may be configured to stop the supply of the cooling gas from the cooling gas supply unit 42 when the pressure of the cooling gas supplied to the cooling space reaches a predetermined pressure. In this case, the pressure of the cooling gas may be set to a pressure at which the shape of the film substrate S does not change into a convex shape toward the target 21. According to such a configuration, the film substrate S can be cooled while suppressing a change in the shape of the film substrate S.

  The gas cooling unit 31 exhausts the cooling gas from the cooling space at a predetermined exhaust flow rate while supplying the cooling gas from the cooling gas supply unit 42 to the cooling space at a predetermined flow rate. A configuration in which the pressure of the cooling gas is maintained at a predetermined value may be employed. According to such a configuration, it is possible to suppress the shape of the film substrate S from changing to a convex shape toward the target 21. In addition, since the cooling gas is circulated in the gas cooling unit 31, the film substrate S of the film substrate S is compared with the configuration in which the supply of the cooling gas is stopped when the pressure of the cooling gas in the cooling space reaches a predetermined pressure. Heat is easily taken away by the cooling gas. As a result, it becomes difficult to increase the temperature of the film substrate S.

  The gas cooling unit 31 may not be connected to the displacement unit 32 that changes the position of the gas cooling unit 31 in the loading / unloading direction, and the position of the gas cooling unit 31 in the loading / unloading direction is fixed to the contact position described above. It may be.

  -The board | substrate fixing | fixed part 64 is not restricted to the structure which supports the upper edge of the tray T in the upper end part of the standing direction of the film board | substrate S, The upper edge of the tray T is set in the center of the upper side of the standing direction of the film board | substrate S. A supporting structure may be used. In this case, the groove width of the holding groove 64h formed in the substrate fixing portion 64 is substantially the same width as the width along the loading / unloading direction in the tray T over the entire conveyance direction in the substrate fixing portion 64, And what is necessary is just the width | variety which the tray T can pass through the clamping groove 64h. Even with such a configuration, the same effect as the above (3) can be obtained.

  In addition, the board | substrate fixing | fixed part 64 should just be the structure which supports either the position of the upper side of the standing direction of the film board | substrate S not only in the upper edge part and center part in the standing direction of the film board | substrate S, but by such a structure. Also, the same effect as the above (3) can be obtained.

  The substrate fixing part 64 may not be attached to the upper wall of the first film formation chamber 12B and the upper wall of the second film formation chamber 12C. Even in such a configuration, when the gas cooling unit 31 comes into contact with the tray T and the tray T is pushed toward the target 21, the tray T has a mass that does not cause the tray T to be displaced by the pressing. In this case, the position of the film substrate S is difficult to change. Further, as long as the lower end of the standing direction in the tray T is supported by the transport lane 12L, the position of the film substrate S is not much different from that of the configuration not supported by the transport lane 12L.

  The gas used for reverse sputtering is not limited to the above-described argon gas, but may be nitrogen gas, oxygen gas, hydrogen gas, carbon tetrafluoride gas, sulfur hexafluoride gas, and nitrogen trifluoride gas. A mixed gas in which two or more gases are mixed may be used.

  When a gas containing fluorine is used in the reverse sputtering process in the first film forming chamber 12B or the reverse sputtering process chamber, or in the etching process in the etching process chamber 12D, each processing chamber in the transport direction and the inversion chamber 12A It is preferable that a gate valve is attached between the two and the exhaust part is attached to each processing chamber.

  In the carry-in / out chamber 11, a mechanism for heating the film substrate S in order to remove the gas adsorbed on the film substrate S may be provided. Alternatively, the sputtering apparatus 10 may include a processing chamber having a mechanism for heating the film substrate S between the carry-in / out chamber 11 and the reversing chamber 12A.

  The vacuum chamber 12 does not have to be configured to include two film forming chambers, and may be configured to include at least one film forming chamber. Alternatively, the vacuum chamber 12 may include a reverse sputtering processing chamber, an etching processing chamber, and an ion processing chamber without including a film formation chamber.

  The flow rate of argon gas supplied when the film substrate S is sputtered, the flow rate of argon gas supplied when the adhesion layer is formed by the first film forming unit 20A, and the seed by the second film forming unit 20B The flow rates of argon gas supplied when the layer is formed may be different from each other. Even in such a configuration, if the argon gas is continuously supplied into the first film forming chamber 12B, the supply of the argon gas is stopped as compared with the configuration in which the sputtering of the film substrate S is stopped at the same time. Thus, plasma is likely to be generated in the first film forming chamber 12B.

  At the same time as the reverse sputtering of the film substrate S is completed, the supply of the argon gas into the first film forming chamber 12B is stopped, and the formation of the adhesion layer in the first film forming unit 20A is started. The supply may be started. Further, the sputtering gas supply unit 25 of the second film forming unit 20B may supply argon gas to the vacuum chamber 12 only when the seed layer is formed in the second film forming chamber 12C.

  DESCRIPTION OF SYMBOLS 10 ... Sputtering device, 11 ... Carrying in / out chamber, 11L ... Carrying in / out lane, 11V, 12V ... Exhaust part, 12 ... Vacuum chamber, 12A ... Inversion chamber, 12B ... 1st film-forming chamber, 12C ... 2nd film-forming chamber, 12D ... Etching chamber, 12E ... Ion chamber, 12L ... Transport lane, 12R ... Substrate rotating unit, 12RD ... Substrate rotating unit driving circuit, 12VD ... Exhaust unit driving circuit, 13 ... Gate valve, 20A ... First film forming unit, 20B ... second film forming unit, 21 ... target, 22 ... backing plate, 23 ... target power supply, 24 ... magnetic circuit, 25 ... sputter gas supply unit, 25D ... sputter gas supply unit drive circuit, 26 ... shutter, 26D ... shutter Drive circuit 31 ... gas cooling unit 32 ... displacement unit 32D ... displacement unit drive circuit 41 ... cooling plate 41h1 ... cooling hole 42 ... cooling gas supply unit 42D ... Rejection gas supply unit drive circuit, 43 ... sealing member, 51 ... bias electrode, 52 ... high frequency power supply for bias, 61 ... transport rail, 62 ... transport roller, 63 ... transport motor, 63D ... transport motor drive circuit, 64 ... substrate fixing Part, 64h ... clamping groove, 70 ... control device, 81 ... high frequency antenna, 82 ... high frequency power supply for antenna, 83 ... etching gas supply part, 84 ... ion gun, S ... film substrate, T ... tray.

Claims (6)

A substrate processing unit for processing a thin substrate;
A cooling unit for cooling the thin substrate,
The cooling part is
Cooling the thin substrate by supplying a gas to the side opposite to the processing surface of the thin substrate on which the processing by the substrate processing unit is performed ,
A tray is attached to the outer periphery of the thin substrate,
The tray pulls the thin substrate from the center of the thin substrate toward the outer periphery of the thin substrate,
The cooling unit is a thin substrate processing apparatus that supplies the gas in a state where the thin substrate is pulled . The front Symbol cooling unit, the seal member is attached to the surface facing said tray,
The cooling part is
The thin substrate processing apparatus according to claim 1, wherein the gas is supplied to a cooling space sealed by the seal member. The substrate processing unit includes:
A film forming unit that forms a thin film on the thin substrate by sputtering, a reverse sputtering processing unit that applies a bias voltage to the thin substrate, an ion processing unit that performs ion bombardment processing on the thin substrate, and plasma using an induction coil thin substrate processing apparatus according to claim 1 or 2 containing either etching processing unit for applying a bias voltage to the thin substrate while generating. The substrate processing unit is the film forming unit,
The cooling part is
The thin substrate processing apparatus according to claim 3 , wherein the gas is supplied to a surface on which a thin film is formed by deposition of sputtered particles on the thin substrate. The substrate processing unit is composed of the film forming unit and the reverse sputtering processing unit,
A vacuum chamber in which the surface of the target of the film forming unit is exposed;
A shutter that covers the surface of the target;
The reverse sputtering processing unit
The thin substrate processing apparatus according to claim 3 , wherein the processing surface of the thin substrate is reverse-sputtered in a state where the shutter covers the surface of the target. The substrate processing unit is the reverse sputtering processing unit,
A voltage application unit for applying a bias voltage to the thin substrate;
A gas supply unit for supplying gas to the thin substrate,
The voltage application unit includes:
The thin substrate processing apparatus according to claim 3 , wherein a bias voltage having a frequency of 1 MHz or more and 6 MHz or less is applied to the thin substrate supplied with the gas.

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