JP6045779B2 - Wavelength conversion structure, manufacturing method thereof, and light emitting device including the wavelength conversion structure - Google Patents
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Description
本発明は、波長変換構造及びその製造方法に関し、特に、高い光取り出し効率を有する波長変換構造及びその製造方法、並びに該波長変換構造を含む発光装置に関する。 The present invention relates to a wavelength conversion structure and a manufacturing method thereof, and more particularly, to a wavelength conversion structure having a high light extraction efficiency, a manufacturing method thereof, and a light emitting device including the wavelength conversion structure.
近年、エネルギー問題がますます重視されており、様々な新型の省エネ照明器具が開発されている。そのうち、発光ダイオード（ＬＥＤ）が、発光効率が高く、電気消費量が少なく、水銀が無く、及び使用寿命が長いなどの利点を有し、次世代の照明器具になりつつある。 In recent years, energy issues have become more important and various new types of energy-saving lighting fixtures have been developed. Among them, light emitting diodes (LEDs) have advantages such as high luminous efficiency, low electricity consumption, no mercury, and long service life, and are becoming the next generation lighting fixtures.
照明用白色ＬＥＤについて言えば、一般的には、ＬＥＤチップが蛍光粉と併せて用いられる。例えば、青色ＬＥＤチップによる青色光を使用することにより、ＹＡＧ（Yttrium Aluminum Garnet；Y3Al5O12）黄色蛍光粉を励起して黄色光を発光させ、それから、両者を混合して白色光を生成する。 As for the white LED for illumination, generally, an LED chip is used in combination with fluorescent powder. For example, by using blue light from a blue LED chip, YAG (Yttrium Aluminum Garnet; Y 3 Al 5 O 12 ) yellow fluorescent powder is excited to emit yellow light, and then both are mixed to produce white light. Generate.
よくある蛍光粉塗布方法としては、絶縁保護コーティング（conformal coating）とリモートフォスファ（remote phosphor）技術との２種類がある。絶縁保護コーティングは、蛍光粉をＬＥＤチップに直接塗布して蛍光粉層を形成するよう行うものである。蛍光粉をＬＥＤチップに直接塗布するので、この種類の塗布方法は、厚みが比較的均一である利点を有する。しかし、ＬＥＤチップ及びそのキャリアが蛍光粉層から発した光を吸収することがあるので、全体の発光効率が低下することがある。また、蛍光粉がＬＥＤチップと直接接触するので、ＬＥＤチップが作動時に１００℃〜１５０℃の高温状態になる場合には、蛍光粉層が次第に変質劣化し、変換効率に悪い影響を与える可能性がある。 There are two common fluorescent powder application methods: conformal coating and remote phosphor technology. The insulating protective coating is performed by directly applying fluorescent powder to the LED chip to form a fluorescent powder layer. Since fluorescent powder is applied directly to the LED chip, this type of application method has the advantage of a relatively uniform thickness. However, since the LED chip and its carrier may absorb light emitted from the fluorescent powder layer, the overall luminous efficiency may be reduced. In addition, since the fluorescent powder is in direct contact with the LED chip, when the LED chip is in a high temperature state of 100 ° C. to 150 ° C. during operation, the fluorescent powder layer may gradually deteriorate and deteriorate the conversion efficiency. There is.
リモートフォスファ技術は、上述の絶縁保護コーティングの問題を解決するために行うものである。リモートフォスファ技術によるＬＥＤ発光素子の蛍光粉層とＬＥＤチップとが分離されるので、蛍光粉層から発した光をＬＥＤチップにより直接吸収することをできる限り避けることができる。また、蛍光粉層がＬＥＤチップから離れる方式で設置されるので、蛍光粉層中の蛍光粉は、ＬＥＤチップの作動時の高温による劣化が生じ難い。 Remote phosphor technology is used to solve the above-mentioned problems of the insulating protective coating. Since the fluorescent powder layer and the LED chip of the LED light emitting element by the remote phosphor technology are separated, it is possible to avoid the light emitted from the fluorescent powder layer from being directly absorbed by the LED chip as much as possible. In addition, since the fluorescent powder layer is installed in a manner away from the LED chip, the fluorescent powder in the fluorescent powder layer is unlikely to deteriorate due to high temperatures during operation of the LED chip.
蛍光粉粒子がＬＥＤチップからの光を受けると励起されて他の種類の色の光を生成することができる。しかし、蛍光粉粒子の励起により生成された光は、全ての方向に向かい、もちろん、内に向かって伝播する光も含む。そのため、パッケージ用樹脂と蛍光粉との屈折率が異なる場合には、全反射が起こりやすく、発光効率が低下する。 When the fluorescent powder particles receive light from the LED chip, they can be excited to generate light of other types. However, the light generated by the excitation of the fluorescent powder particles is directed in all directions, and of course includes light propagating inward. Therefore, when the refractive index of the package resin and the fluorescent powder are different, total reflection is likely to occur, and the light emission efficiency is lowered.
本発明の目的は、高い光取り出し効率を有する波長変換構造及びその製造方法、並びに該波長変換構造を有する発光装置を提供することにある。 An object of the present invention is to provide a wavelength conversion structure having high light extraction efficiency, a method for manufacturing the same, and a light emitting device having the wavelength conversion structure.
本発明の一実施例によれば、波長変換構造が提供される。この波長変換構造は、第一領域と第二領域とを含む蛍光粉層であって、第二領域は第一領域の上に位置し、且つ第一領域及び第二領域はそれぞれ隙間を有する蛍光粉層と、蛍光粉層の第一領域の隙間に形成される第一材料層と、蛍光粉層の第二領域の隙間に形成される第二材料層とを含む。 According to one embodiment of the present invention, a wavelength conversion structure is provided. This wavelength conversion structure is a fluorescent powder layer including a first region and a second region, the second region is located on the first region, and the first region and the second region are fluorescent light having a gap, respectively. A powder layer, a first material layer formed in a gap between the first regions of the fluorescent powder layer, and a second material layer formed in a gap between the second regions of the fluorescent powder layer are included.
本発明の一実施例によれば、波長変換構造が提供される。この波長変換構造は、第一材料層と、第二材料層と、複数の蛍光粉粒子とを含み、第二材料層は第一材料層の上に位置し、複数の蛍光粉粒子は第一材料層及び第二材料層内に分散される。 According to one embodiment of the present invention, a wavelength conversion structure is provided. The wavelength conversion structure includes a first material layer, a second material layer, and a plurality of fluorescent powder particles, the second material layer is located on the first material layer, and the plurality of fluorescent powder particles are the first Dispersed in the material layer and the second material layer.
本発明の他の一実施例によれば、波長変換構造の製造方法が提供される。この波長変換構造の製造方法は、基板を提供するステップと、基板の上に蛍光粉層を形成するステップであって、蛍光粉層は第一領域と第二領域とを含み、第二領域は第一領域の上に位置し、且つ第一領域及び第二領域はそれぞれ隙間を有するステップと、第一領域の隙間に第一材料層を形成するステップと、第二領域の隙間に第二材料層を形成するステップとを含む。 According to another embodiment of the present invention, a method for manufacturing a wavelength conversion structure is provided. The method for manufacturing a wavelength conversion structure includes a step of providing a substrate and a step of forming a fluorescent powder layer on the substrate, the fluorescent powder layer including a first region and a second region, wherein the second region is A first region and a second region each having a gap; a step of forming a first material layer in the first region; and a second material in the second region. Forming a layer.
本発明の他の一実施例によれば、発光装置が提供される。この発光装置は、キャリアと、キャリアの上に設置される発光素子と、発光素子を覆い且つキャリアの上に設置される第一導光層と、第一導光層の上に位置する波長変換構造とを含み、波長変換構造は、導電基板と、第一領域と第二領域とを含む蛍光粉層であって、第一領域は第一導光層の上に位置し、第二領域は第一領域の上に位置し、且つ第一領域及び第二領域はそれぞれ隙間を有する蛍光粉層と、蛍光粉層の第一領域の隙間に形成される第一材料層と、蛍光粉層の第二領域の隙間に形成される第二材料層とを含む。 According to another embodiment of the present invention, a light emitting device is provided. The light emitting device includes a carrier, a light emitting element installed on the carrier, a first light guide layer covering the light emitting element and installed on the carrier, and a wavelength conversion located on the first light guide layer. The wavelength conversion structure is a fluorescent powder layer including a conductive substrate, a first region and a second region, wherein the first region is located on the first light guide layer, and the second region is The first region and the second region are located above the first region, and the first region and the second region each have a gap, the first material layer formed in the gap between the first region of the phosphor layer, and the phosphor layer And a second material layer formed in the gap of the second region.
本発明の実施例によれば、高い光取り出し効率を有する波長変換構造及びその製造方法、並びに該波長変換構造を有する発光装置を提供することができる。 According to the embodiments of the present invention, it is possible to provide a wavelength conversion structure having high light extraction efficiency, a method for manufacturing the same, and a light emitting device having the wavelength conversion structure.
次に、添付した図面を参照しながら、本発明の好適な実施形態を詳細に説明する。 Next, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
なお、本明細書では、一つの素子又は一つの材料層が他の素子又は他の材料層の上に設置（形成、配置など）又は接続（連結など）されるとのように記載するときは、この一つの素子又は一つの材料層が他の素子又は他の材料層上に直接的に設置（形成、配置など）又は接続（連結など）されること、或いは、他の素子又は他の材料層の上に間接的に設置（形成、配置など）又は接続（連結など）されること（即ち、両者の間は他の素子又は他の材料層を有すること）を意味する。また、一つの素子又は一つの材料層が他の素子又は他の材料層上に直接的に設置（形成、配置など）又は接続（連結など）されるとのように記載するときは、両者の間は他の素子又は他の材料層を有しないことを意味する。 In this specification, when it is described that one element or one material layer is placed (formed, arranged, etc.) or connected (coupled, etc.) on another element or another material layer This one element or one material layer is directly installed (formed, arranged, etc.) or connected (coupled) on another element or other material layer, or another element or other material It means that it is indirectly installed (formed, arranged, etc.) or connected (coupled, etc.) on the layer (that is, it has other elements or other material layers between them). In addition, when it is described that one element or one material layer is directly installed (formed, arranged, etc.) or connected (coupled, etc.) on another element or other material layer, It means that there are no other elements or other material layers.
図１は、本発明の一実施例における波長変換構造１０を示す図である。波長変換構造１０は、導電基板１０１と、蛍光粉層１０２と、第一材料層１０３と、第二材料層１０４とを含む。蛍光粉層１０２は、導電基板１０１の上に形成され、蛍光粉粒子からなり、また、蛍光粉粒子間は隙間を有する。蛍光粉層１０２は、第一領域１０５と第二領域１０６とを含み、第一領域１０５は、導電基板１０１の上に位置し、第二領域１０６は、第一領域１０５の上に位置し、また、第一領域１０５の厚みと第二領域１０６の厚みとの和は、蛍光粉層１０２の厚みと等しい。第一材料層１０３は、導電基板１０１の上に位置し、この第一材料層１０３は、無機化合物を第一領域１０５の隙間に充填し、厚みが蛍光粉層１０２の厚みより小さい薄層を形成することにより得られる。第二材料層１０４は、第一材料層１０３の上に位置し、この第二材料層１０４は、ゴム材料又はガラスを蛍光粉層１０２の第二領域１０６の隙間に充填することにより形成される。 FIG. 1 is a diagram showing a wavelength conversion structure 10 in one embodiment of the present invention. The wavelength conversion structure 10 includes a conductive substrate 101, a fluorescent powder layer 102, a first material layer 103, and a second material layer 104. The fluorescent powder layer 102 is formed on the conductive substrate 101 and is made of fluorescent powder particles, and there is a gap between the fluorescent powder particles. The fluorescent powder layer 102 includes a first region 105 and a second region 106, the first region 105 is located on the conductive substrate 101, the second region 106 is located on the first region 105, Further, the sum of the thickness of the first region 105 and the thickness of the second region 106 is equal to the thickness of the fluorescent powder layer 102. The first material layer 103 is located on the conductive substrate 101, and the first material layer 103 is a thin layer having an inorganic compound filled in the gaps of the first region 105 and having a thickness smaller than that of the fluorescent powder layer 102. It is obtained by forming. The second material layer 104 is located on the first material layer 103, and the second material layer 104 is formed by filling a gap between the second regions 106 of the fluorescent powder layer 102 with rubber material or glass. .
導電基板１０１は、透明導電性を有し、その材料は、透明導電性無機化合物（ＴＣＯ）を含んでも良いが、これに限定されない。蛍光粉層１０２は、導電基板１０１の上に形成され、その材料は、黄色セラミック蛍光材料（即ち、励起されて黄色光を発光するセラミック蛍光材料）を含んでも良いが、これに限定されない。蛍光粉層１０２の蛍光粉粒子の粒径の範囲は、約２２５〜８２５ｎｍであり、蛍光粉粒子間は、隙間を有する。蛍光粉層１０２は、第一領域１０５と第二領域１０６とを含み、この第一領域１０５の厚みは、蛍光粉層１０２の厚みより小さく、第一領域１０５の厚みと蛍光粉層１０２の厚みとの比は、０．５〜１．９であり、また、この第二領域１０６の厚みは、蛍光粉層１０２の厚みから第一領域１０５の厚みを引いた後の値に等しい。 The conductive substrate 101 has transparent conductivity, and the material thereof may include a transparent conductive inorganic compound (TCO), but is not limited thereto. The fluorescent powder layer 102 is formed on the conductive substrate 101. The material may include a yellow ceramic fluorescent material (that is, a ceramic fluorescent material that emits yellow light when excited), but is not limited thereto. The range of the particle size of the fluorescent powder particles of the fluorescent powder layer 102 is about 225 to 825 nm, and there is a gap between the fluorescent powder particles. The fluorescent powder layer 102 includes a first region 105 and a second region 106. The thickness of the first region 105 is smaller than the thickness of the fluorescent powder layer 102, and the thickness of the first region 105 and the thickness of the fluorescent powder layer 102 are the same. And the thickness of the second region 106 is equal to the value obtained by subtracting the thickness of the first region 105 from the thickness of the fluorescent powder layer 102.
図２に示すように、無機化合物を第一領域１０５の蛍光粉粒子間の隙間に充填することによって上述の第一材料層１０３を形成する。無機化合物の材料は、例えば、金属酸化物であり、酸化亜鉛（ＺｎＯ）、酸化アルミニウム（Ａｌ２Ｏ３）、酸化インジウムスズ（ＩＴＯ）、酸化アルミニウム亜鉛（ＡＺＯ）又はインジウムガリウム亜鉛酸化物（ＩｎＧａＺｎＯ、ＩＧＺＯ）を含んでも良いが、これらに限定されない。蛍光粉層１０２の材料が黄色セラミック蛍光粉であると、その屈折率が約２であり、この場合は、無機化合物の材料は、好ましくは、該蛍光粉の屈折率に近いものを有する材料を採用し、例えば、屈折率が約１．８〜２である酸化亜鉛（ＺｎＯ）を使用しても良い。第一材料層１０３の屈折率と蛍光粉層１０２の屈折率とが近いため、材料間の屈折率が異なることによる発光効率の低下を有効に防止することができる。また、蛍光粉粒子間の隙間に充填される無機化合物は、粘着剤の役割を果たすこともでき、これにより、蛍光粉層１０２の機械的強度を向上させることができる。 As shown in FIG. 2, the first material layer 103 described above is formed by filling the gap between the fluorescent powder particles in the first region 105 with an inorganic compound. The material of the inorganic compound is, for example, a metal oxide, such as zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), indium tin oxide (ITO), aluminum zinc oxide (AZO), or indium gallium zinc oxide (InGaZnO). IGZO), but is not limited thereto. When the material of the fluorescent powder layer 102 is a yellow ceramic fluorescent powder, the refractive index thereof is about 2. In this case, the material of the inorganic compound is preferably a material having a refractive index close to that of the fluorescent powder. For example, zinc oxide (ZnO) having a refractive index of about 1.8 to 2 may be used. Since the refractive index of the first material layer 103 and the refractive index of the fluorescent powder layer 102 are close to each other, it is possible to effectively prevent a decrease in luminous efficiency due to a difference in refractive index between materials. In addition, the inorganic compound filled in the gaps between the fluorescent powder particles can also play a role of an adhesive, thereby improving the mechanical strength of the fluorescent powder layer 102.
また、ゴム材料を蛍光粉層１０２の第二領域１０６の隙間に充填することによって上述の第二材料層１０４を形成する。第二材料層１０４の材料は、屈折率が約１．４５であるシリカゲルを含んでも良いが、これに限定されない。言い換えると、本実施例におけるゴム材料は、シリカゲルであるが、他の実施例では、ゴム材料としては他の材料、例えば、ガラス（屈折率が１．５〜１．９）、樹脂（屈折率が１．５〜１．６）、二酸化チタン（ＴｉＯ２；屈折率が２．２〜２．４）、二酸化シリコン（ＳｉＯ２；屈折率が１．５〜１．７）、又はフッ化マグネシウム（ＭｇＦ；屈折率が１．３８）などを使用しても良い。また、第二材料層１０４は、屈折率が約１．３〜１．６である有機化合物又は無機化合物を含んでも良い。 Moreover, the above-mentioned second material layer 104 is formed by filling a gap between the second regions 106 of the fluorescent powder layer 102 with a rubber material. The material of the second material layer 104 may include silica gel having a refractive index of about 1.45, but is not limited thereto. In other words, the rubber material in this embodiment is silica gel, but in other embodiments, the rubber material is another material such as glass (refractive index of 1.5 to 1.9), resin (refractive index). 1.5 to 1.6), titanium dioxide (TiO 2 ; refractive index 2.2 to 2.4), silicon dioxide (SiO 2 ; refractive index 1.5 to 1.7), or magnesium fluoride (MgF; refractive index 1.38) or the like may be used. Further, the second material layer 104 may include an organic compound or an inorganic compound having a refractive index of about 1.3 to 1.6.
本実施例では、第二領域１０６の厚みは、蛍光粉層１０２の厚みから第一領域１０５の厚みを引いた後の値と等しい。また、他の一実施例では、図３に示すように、第二材料層１０４の厚みが第二領域１０６の厚みより大きく、即ち、第二材料層１０４の頂面１２４が蛍光粉層１０２の頂面１２６より高く、これにより、波長変換構造１０の表面をさらに平坦化することができる。 In the present embodiment, the thickness of the second region 106 is equal to the value after the thickness of the first region 105 is subtracted from the thickness of the fluorescent powder layer 102. In another embodiment, as shown in FIG. 3, the thickness of the second material layer 104 is larger than the thickness of the second region 106, that is, the top surface 124 of the second material layer 104 is formed of the fluorescent powder layer 102. It is higher than the top surface 126, and thus the surface of the wavelength conversion structure 10 can be further planarized.
以下、本実施例における波長変換構造１０の製造方法について説明する。先ず、導電基板１０１を電気泳動装置内に置き、この導電基板１０１は、例えば、ＩＴＯガラスであっても良い。図４のＳＥＭ写真に示すように、電気泳動技術により蛍光粉粒子をＩＴＯガラスの表面に堆積させることによって蛍光粉層１０２を形成する。本実施例における蛍光粉層１０２は、入射した光の波長を変換できる材料、例えば、蛍光材料を有する。蛍光粉層１０２の堆積方法は、電気泳動技術に限定されず、他の堆積方法、例えば、重力堆積方法を含んでも良い。次に、メッキにより透明な無機化合物（例えば、ＺｎＯ）を蛍光粉層１０２の第一領域１０５の隙間に充填することによって第一材料層１０３を形成する。蛍光粉の屈折率に近いものを有する透明な酸化物を充填することにより、光の散乱（scattering）による損失を減らして白色光の光取り出し効率を向上させることができる。図５のＳＥＭ写真に示すように、上述の無機化合物は、蛍光粉粒子の粘着剤の役割を果たすこともでき、これにより、蛍光粉層１０２の機械的強度を向上させることができる。第一材料層１０３の堆積厚みは、蛍光粉粒子及び又は隙間の大小に従って調整されても良い。第一材料層１０３の堆積方法は、メッキに限定されず、無機化合物を蛍光粉粒子間の隙間に充填できる他の方法、例えば、ＣＶＤ方法又はＳｏｌ−Ｇｅｌ方法を含んでも良い。最後に、図６のＳＥＭ写真に示すように、ゴム材料を蛍光粉層１０２の第二領域１０６の隙間に完全に充填する。ゴム材料を充填する方法は、当業者に良く知られているものであるため、ここでは、その詳細な説明を省略する。形成された波長変換構造１０は、ほぼ均一又は不均一な厚みを有する。 Hereinafter, the manufacturing method of the wavelength conversion structure 10 in a present Example is demonstrated. First, the conductive substrate 101 is placed in an electrophoresis apparatus, and the conductive substrate 101 may be, for example, ITO glass. As shown in the SEM photograph of FIG. 4, the fluorescent powder layer 102 is formed by depositing the fluorescent powder particles on the surface of the ITO glass by the electrophoresis technique. The fluorescent powder layer 102 in this embodiment includes a material that can convert the wavelength of incident light, for example, a fluorescent material. The deposition method of the fluorescent powder layer 102 is not limited to the electrophoresis technique, and may include other deposition methods such as a gravity deposition method. Next, the first material layer 103 is formed by filling a gap between the first regions 105 of the fluorescent powder layer 102 with a transparent inorganic compound (for example, ZnO) by plating. By filling a transparent oxide having a refractive index close to that of the fluorescent powder, loss due to light scattering can be reduced and the light extraction efficiency of white light can be improved. As shown in the SEM photograph of FIG. 5, the above-described inorganic compound can also serve as a pressure-sensitive adhesive for fluorescent powder particles, thereby improving the mechanical strength of the fluorescent powder layer 102. The deposition thickness of the first material layer 103 may be adjusted according to the size of the fluorescent powder particles and / or the gap. The deposition method of the first material layer 103 is not limited to plating, and may include other methods that can fill the gaps between the fluorescent powder particles with an inorganic compound, such as a CVD method or a Sol-Gel method. Finally, as shown in the SEM photograph of FIG. 6, the rubber material is completely filled in the gap between the second regions 106 of the fluorescent powder layer 102. Since the method of filling the rubber material is well known to those skilled in the art, a detailed description thereof is omitted here. The formed wavelength conversion structure 10 has a substantially uniform or non-uniform thickness.
図７は、本発明の一実施例における発光装置２０を示す図である。発光装置２０は、パッケージ基板１１１と、発光ダイオード１１０と、筐体１１２と、導光層１１３と、波長変換構造１０とを含む。発光ダイオード１１０は、パッケージ基板１１１の上に位置する。導光層１１３は、パッケージ基板１１１と発光ダイオード１１０とを覆う。発光装置２０は、例えば、上述の実施例による波長変換構造１０を含む。波長変換構造１０と発光ダイオード１１０とが筐体１１２により分離され、蛍光粉が発光ダイオード１１０と直接接触せず、これにより、蛍光粉層から発した光を発光ダイオード１１０（ＬＥＤチップ）により直接吸収することをできる限り避けることができる。また、蛍光粉が発光ダイオード１１０から離れる方式で設置されるので、蛍光粉層中の蛍光粉は、発光ダイオード１１０の作動時の高温による劣化が生じ難い。 FIG. 7 is a diagram showing the light emitting device 20 in one embodiment of the present invention. The light emitting device 20 includes a package substrate 111, a light emitting diode 110, a housing 112, a light guide layer 113, and a wavelength conversion structure 10. The light emitting diode 110 is located on the package substrate 111. The light guide layer 113 covers the package substrate 111 and the light emitting diode 110. The light emitting device 20 includes, for example, the wavelength conversion structure 10 according to the above-described embodiment. The wavelength conversion structure 10 and the light emitting diode 110 are separated by the housing 112, and the fluorescent powder does not directly contact the light emitting diode 110, whereby the light emitted from the fluorescent powder layer is directly absorbed by the light emitting diode 110 (LED chip). You can avoid doing as much as possible. In addition, since the fluorescent powder is installed in a manner away from the light emitting diode 110, the fluorescent powder in the fluorescent powder layer is unlikely to deteriorate due to a high temperature during the operation of the light emitting diode 110.
本実施例における導光層１１３は、光透過層であり、光取り出し効率を向上できる材料層を有するものであっても良い。本実施例では、導光層１１３は、複数の材料層を有し、また、勾配屈折率（gradient refractive index）を有する。本実施例では、導光層１１３の複数の材料層は、窒化シリコン（Ｓｉ３Ｎ４；屈折率ｎａ＝１．９５）層と、酸化アルミニウム(Al2O3；屈折率ｎｂ＝１．７)層と、シリコーン（silicone；屈折率ｎｃ＝１．４５）層とからなるスタック層であっても良いが、他の実施例では、他の材料層の組合せを採用しても良い。層と層との屈折率の差が小さく、各層の屈折率が発光ダイオード１１０から離れる方向に沿って次第に減少する複数の材料層を利用することにより、光の全反射の発生を有効に抑えることができる。また、使用可能な材料としては、ガラス（屈折率が１．５〜１．９）、樹脂（屈折率が１．５〜１．６）、ＤＬＣ（diamond like carbon；屈折率が２．０〜２．４）、二酸化チタン（ＴｉＯ２；屈折率が２．２〜２．４）、二酸化シリコン（ＳｉＯ２；屈折率が１．５〜１．７）、又はフッ化マグネシウム（ＭｇＦ；屈折率が１．３８）などの組合せであっても良い。本実施例では、発光ダイオード１１０は、屈折率が２．４であるＧａＮの青色ＬＥＤチップを採用しても良い。よって、勾配屈折率を有し、且つ、層と層との屈折率の差が小さいスタック層を使用することにより、光の全反射の発生を有効に抑えることができる。 The light guide layer 113 in this embodiment is a light transmission layer, and may have a material layer that can improve light extraction efficiency. In the present embodiment, the light guide layer 113 includes a plurality of material layers and has a gradient refractive index. In the present embodiment, the plurality of material layers of the light guide layer 113 include a silicon nitride (Si 3 N 4 ; refractive index n a = 1.95) layer and an aluminum oxide (Al 2 O 3 ; refractive index n b = 1). .7) A stack layer composed of a layer and a silicone (silicone; refractive index n c = 1.45) layer may be used, but in other embodiments, a combination of other material layers may be adopted. . By using a plurality of material layers in which the difference in refractive index between layers is small and the refractive index of each layer gradually decreases along the direction away from the light emitting diode 110, generation of total reflection of light is effectively suppressed. Can do. Examples of usable materials include glass (refractive index: 1.5 to 1.9), resin (refractive index: 1.5 to 1.6), DLC (diamond like carbon; refractive index: 2.0 to 2.4), titanium dioxide (TiO 2 ; refractive index: 2.2 to 2.4), silicon dioxide (SiO 2 ; refractive index: 1.5 to 1.7), or magnesium fluoride (MgF; refractive index) May be a combination such as 1.38). In this embodiment, the light emitting diode 110 may be a GaN blue LED chip having a refractive index of 2.4. Therefore, by using a stack layer having a gradient refractive index and a small difference in refractive index between layers, occurrence of total reflection of light can be effectively suppressed.
本実施例における発光装置２０では、導光層１１３の上に例えば上述の実施例による波長変換構造１０が設けられ、光が発光ダイオード１１０から発した後に導光層１１３を通過して波長変換構造１０に進入する。つまり、発光ダイオード１１０から発した光は、複数の材料層を有する導光層１１３を通過した後に、屈折率が比較的低い第二材料層１０４に入射し、それから、蛍光粉層１０２と、蛍光粉の屈折率に近いものを有する第一材料層１０３とに進入する。よって、屈折率の差が比較的小さいので、全反射による光の損失を有効に軽減することができる。また、無機化合物と蛍光粉粒子との屈折率が近いので、蛍光粉粒子間における光の散乱を低減することもできる。なお、本実施例における発光装置２０は、平板状のパッケージ構造であるが、他の実施例では、波長変換構造１０の導電基板１０１の形状が平板状に限定されず、凸レンズ状、凹レンズ状、又は三角錐状であっても良く、即ち、導電基板１０１の表面が平面、曲面、又は折れ曲がり面であっても良い。 In the light emitting device 20 according to the present embodiment, the wavelength conversion structure 10 according to the above-described embodiment is provided on the light guide layer 113, and the wavelength conversion structure passes through the light guide layer 113 after light is emitted from the light emitting diode 110. Enter 10. That is, the light emitted from the light emitting diode 110 passes through the light guide layer 113 having a plurality of material layers, and then enters the second material layer 104 having a relatively low refractive index. It enters into the first material layer 103 having a material close to the refractive index of the powder. Therefore, since the difference in refractive index is relatively small, the loss of light due to total reflection can be effectively reduced. Moreover, since the refractive indexes of the inorganic compound and the fluorescent powder particles are close to each other, light scattering between the fluorescent powder particles can be reduced. Although the light emitting device 20 in this embodiment has a flat package structure, in other embodiments, the shape of the conductive substrate 101 of the wavelength conversion structure 10 is not limited to a flat plate shape, and may be a convex lens shape, a concave lens shape, Alternatively, it may be a triangular pyramid, that is, the surface of the conductive substrate 101 may be a flat surface, a curved surface, or a bent surface.
表１は、本発明の一実施例による波長変換構造１０を有する発光装置２０の発光効率と、従来のリモートフォスファ技術によるＬＥＤ発光素子の発光効率とを比較するものである。具体的には、実験により、蛍光粉層１０２の隙間にシリカゲルのみを充填する従来のＬＥＤ発光素子の発光効率と、蛍光粉層１０２の隙間に無機化合物ＩＴＯ、シリカゲル、及びＺｎＯを充填する本発明の一実施例による波長変換構造１０を有する発光装置２０の発光効率とを比較する。この実験によれば、蛍光粉層１０２の隙間にシリカゲルのみ充填するＬＥＤ発光素子の発光効率は、約３２．１５ルーメン／ワットであり、蛍光粉層１０２の隙間にＺｎＯ、シリカゲル、及びＩＴＯ材料を充填する発光装置２０の発光効率は、約３５．９〜３６．８ルーメン／ワットである。後者の場合は、ＺｎＯのメッキ時間が４５分であるときに、その発光効率は約３５．９ルーメン／ワットであり、ＺｎＯのメッキ時間が９０分であるときに、その発光効率は約３６．８ルーメン／ワットである。比較すれば分かるように、本発明の一実施例による波長変換構造１０を有する発光装置２０の発光効率は、従来のＬＥＤ発光素子の発光効率より約１４％高い。また、ＺｎＯのメッキ時間が９０分である発光素子２０の発光効率は、ＺｎＯのメッキ時間が４５分である発光素子２０の発光効率より高い。その結果は、表１に示されている。
１０ 波長変換構造
１０１ 導電基板
１０２ 蛍光粉層
１０３ 第一材料層
１０４ 第二材料層
１０５ 第一領域
１０６ 第二領域
１１０ 発光ダイオード
１１１ パッケージ基板
１１２ 筐体
１１３ 導光層
２０ 発光装置
DESCRIPTION OF SYMBOLS 10 Wavelength conversion structure 101 Conductive board | substrate 102 Fluorescent powder layer 103 1st material layer 104 2nd material layer 105 1st area | region 106 2nd area | region 110 Light emitting diode 111 Package board | substrate 112 Case 113 Light guide layer 20 Light-emitting device
Claims (8)
第一領域と第二領域とを含む蛍光粉層であって、前記第二領域は前記第一領域の上に位置し、且つ前記第一領域及び前記第二領域は隙間をそれぞれ有する蛍光粉層と、
前記蛍光粉層の前記第一領域の隙間に形成される第一材料層と、
前記蛍光粉層の前記第二領域の隙間に形成される第二材料層と、を含み、
前記第一材料層の屈折率は、前記第二材料層の屈折率より少なくとも０．２大きい、波長変換構造。 A wavelength conversion structure,
A fluorescent powder layer including a first region and a second region, wherein the second region is located on the first region, and the first region and the second region each have a gap. When,
A first material layer formed in a gap between the first regions of the fluorescent powder layer;
A second material layer formed in the gap of the second region of the fluorescent powder layer,
The wavelength conversion structure, wherein the refractive index of the first material layer is at least 0.2 larger than the refractive index of the second material layer.
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